Manufacturing method and forming structure of embedded adapter plate

Abstract

The invention discloses a manufacturing method of an embedded adapter plate and a forming structure of the embedded adapter plate, and belongs to the technical field of semiconductor packaging. The process comprises the following steps: preprocessing a packaging substrate and planting metal balls on the back surface; temporarily bonding a temporary bonding carrier plate on the front surface of the packaging substrate; carrying out plastic packaging on the back surface of the packaging substrate and the metal balls, carrying out curing, and then carrying out first thinning; de-bonding the front surface of the packaging substrate; preparing a bridging chip monomer, and arranging a first metal column group on the front surface of the bridging chip monomer; a second metal column group is arranged on the front surface of the packaging substrate, and a bridging chip monomer is positively arranged on the front surface of the packaging substrate; carrying out plastic packaging on the second metal column group and the bridging chip monomer, thinning to expose the metal column end surfaces of the first metal column group and the second metal column group, and arranging a rewiring layer to form the front surface of the embedded adapter plate; thinning the back surface of the packaging substrate for the second time until the metal balls are exposed, forming the back surface of the embedded adapter plate, and completing the structure of the embedded adapter plate. According to the invention, the difficulty of a packaging process is reduced, the product performance is improved, and the process cost is reduced.

Description

Technical Field

[0001] The invention relates to a manufacturing method of an embedded adapter plate and a forming structure thereof, belonging to the technical field of semiconductor packaging. Background Art

[0002] With the miniaturization, integration, and intelligence of electronic products, the complexity of IC chips has increased significantly, and the corresponding number of I / O pins has also increased significantly. This has placed higher demands on the high density and miniaturization of integrated circuits. In the post-Moore era, more and more companies are turning to back-end advanced packaging processes for solutions to ensure continuous improvement in product performance. Embedded packaging, as an advanced high-density 2.5D / 3D packaging method, is gaining increasing attention.

[0003] EMIB (Embedded Multi-die Interconnect Bridge) is a representative product of 2.5D packaging. The embedded multi-die interconnect bridge packaging substrate is an important component of it. It adopts the high-density interconnect (HDI) substrate manufacturing process. See the published patent: A method for manufacturing an embedded adapter board and its packaging structure, application number: CN111128949B, such as Figure 1 The manufacturing process is briefly described as follows: Organic composite materials and copper foil are laminated using a traditional process until the final buildup layer is reached. A cavity is then created by slotting. A single, pre-prepared silicon bridge chip 400 is placed into the cavity and secured in place with adhesive. A dielectric layer 500 is then laminated. Fine vias 440 are then formed in the bridge area using laser drilling (laser etching) or photolithography (masking and etching), while coarse vias are formed in other areas. Finally, the vias are filled using electroplating, and UBM pads are formed on the dielectric layer surface.

[0004] When the silicon bridge is partially embedded after the substrate is grooved, the poor coplanarity (poor flatness) and precision of the silicon bridge and the substrate result in the inability to capture the metal contact pads on the surface of the adapter board or the capture is offset when the hole is subsequently opened on the dielectric layer above the bridge. This results in the inability to complete the extraction of the metal pads on the surface of the silicon bridge, affecting the transmission of electrical signals. At the same time, due to the increasing demand for I / O density, the diameter and spacing of the holes on the dielectric layer are getting smaller and smaller. For laser drilling, this process cannot meet the narrow pitch and small aperture requirements of high interconnection density. During the drilling process, the laser processing energy process window is narrow, and it is easy to cause damage to the metal pads on the surface of the silicon bridge due to unreasonable energy control, resulting in defects, which affects the subsequent hole metallization process and causes signal conduction failure. For photolithography drilling technology, special photosensitive materials need to be developed to improve the drilling capability. Compared with laser drilling, its manufacturing process is more complex and the process is longer, which increases the process cost. Summary of the Invention

[0005] In order to overcome the shortcomings of the existing packaging process, the present invention provides a method for manufacturing an embedded adapter plate and a forming structure thereof, so as to reduce the difficulty of the packaging process, improve product performance, and reduce process costs.

[0006] The technical solution of the present invention is as follows: The present invention welds the metal balls to the back of the package substrate through a ball planting process, then uses a temporary bonding process and a plastic packaging process to realize wafer or panel reconstruction, and appropriately thins the plastic packaging body to improve flatness, and then uses a photolithography process and an electroplating process to lead out the substrate pad signal in the form of a metal column on the front of the package substrate, and then uses a mounting process to stick the bridge chip monomer with the prepared metal column and adhesive to the reserved patch area on the front of the package substrate, and then uses a plastic packaging process to protect the metal column and the bridge chip monomer, and then uses a grinding process to thin the entire surface of the plastic packaging body until the package substrate and the bridge chip monomer are connected. The metal pillars are exposed to enable signal lead-out. Then, multiple passivation layers and RDL layers are superimposed to achieve interconnection and conduction of all signals on the front side of the package substrate and the bridge chip monomer, and a pad is formed on the last metal layer. A window needs to be opened in the passivation layer above the pad to expose the pad, which is convenient for subsequent welding and integration of multiple chips to achieve signal interconnection and conduction of multiple chips. Finally, the plastic package on the back side of the package substrate is thinned a second time until the metal ball is exposed to enable the lead-out of the back side signal. At this point, the reconstructed new adapter board realizes all signal conduction on the front and back sides of the package substrate and the embedded bridge chip.

[0007] In one embodiment of the present invention, the inner core of the metal ball is a copper core ball, and the outer core of the metal ball is coated with a layer of solder.

[0008] The present invention also provides a method for manufacturing an embedded adapter plate, and the process steps are as follows: Step 1: pre-treating the packaging substrate and implanting metal balls on the back side, wherein the packaging substrate is made of an organic substrate, a glass substrate or a silicon substrate; Step 2: temporarily bonding the front surface of the package substrate to a temporary bonding carrier; Step 3: Through the molding process, the substrate and the metal balls are encapsulated with a molding compound I, and then cured, and then the first thinning is performed; Step 4: Debonding the front side of the package substrate; Step 5: Prepare a bridge chip unit and set a first metal column group on the front side; Step 6: a second metal column group is provided on the front surface of the package substrate and the bridge chip unit is mounted upright, wherein the height h3 of the second metal column group is greater than the overall thickness h2 of the bridge chip unit with the first metal column group; Step 7: Plastic-encapsulate the second metal pillar group and the bridge chip unit, and thin them to expose the metal pillar end faces of the first metal pillar group and the second metal pillar group. Then, a rewiring layer is provided, and input and output ports are formed on the last metal layer of the rewiring layer to form the front face of the embedded adapter board. Step 8: The back of the package substrate is thinned for the second time until the cross section of the metal ball is exposed, forming the back of the embedded adapter plate and completing the structure of the embedded adapter plate; Step nine: perform electrical testing on the embedded adapter board.

[0009] In one embodiment of the present invention, in step 1, the glass substrate is formed by the following process: a plurality of through-holes penetrating the upper and lower surfaces of the incoming glass are formed by laser and etching processes, and then the through-holes and the upper and lower surfaces of the glass substrate are filled with copper by a double-sided copper plating process to form surface copper. The surface copper on the upper and lower surfaces of the glass substrate is then removed by a chemical mechanical polishing process, leaving only the metal copper filling in the through-holes, and then a back-side rewiring metal layer and a front-side rewiring metal layer are respectively provided on the upper and lower surfaces of the glass substrate. The silicon substrate is formed as follows: a plurality of through-holes penetrating the upper and lower surfaces of the incoming substrate are formed by a Bosch etching process, an oxide layer is formed on the through-holes and the upper and lower surfaces of the silicon substrate in sequence by a thermal oxygen or plasma-enhanced chemical vapor deposition process, and surface copper is formed by a double-sided copper plating process, and then the surface copper on the upper and lower surfaces of the silicon substrate is removed by a chemical mechanical polishing process, and only a metal copper filler is filled in the through-holes, and then a back-side rewiring metal layer and a front-side rewiring metal layer are respectively provided on the upper and lower surfaces of the silicon substrate.

[0010] As an implementation method of the present invention, in step 1, the packaging substrate with the metal balls implanted on the back is provided in a single piece or single strip form through a cutting process. Beneficial effects

[0011] The present invention provides a method for manufacturing an embedded adapter board and a forming structure thereof, which uses plastic packaging material, copper core solder balls, copper pillars and conventional photolithography and electroplating processes to achieve signal interconnection and conduction of the reconstructed adapter board. Compared with the packaging substrate slot embedding solution, the process flow is simpler, easier to implement, and reduces process costs; before the subsequent process, the reconstructed new adapter board can be selected as good products through electrical testing for subsequent packaging, thereby improving the yield of the overall packaging solution and reducing material waste caused by process defects; its forming structure adopts a five-sided sealing design, which can effectively protect the internal structure and improve the reliability of the reconstructed adapter board; copper core solder balls are used on the back to lead out signals, which increases the heat dissipation performance of the overall packaging structure and improves product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the existing embedded adapter plate structure; Figure 2 This is a process flow chart of a method for manufacturing an embedded adapter plate of the present invention: Figure 3 A cross-sectional view of a first embodiment of the structure of an embedded adapter plate of the present invention; Figure 4 A cross-sectional view of a second embodiment of the structure of an embedded adapter plate of the present invention; Figure 5 A cross-sectional view of a third embodiment of the structure of an embedded adapter plate according to the present invention; Figure 6 for Figure 3 A cross-sectional view of an application of an embodiment; Figures 7A to 7P for Figure 3 Flowchart of the graphics forming process; Among them, the bridge chip monomer 100 DAF membrane 150 First metal pillar group 110 The second metal pillar group 210 Rewiring layer 400 Passivation layer 410 Third pad 430 Embedded adapter plate front 450 Package substrate 500 Package substrate back side 510 Backside redistribution metal layer 513 Front side redistribution metal layer 533 Through hole 501 Oxide layer 503 Metal deposits 505 Metal copper filler 507 First pad 511 Package substrate front side 530 Second pad 531 Patch area 550 Metal Ball 600 Copper core ball 610 Solder 630 Solder ball 650 Temporary Bonding Carrier 700 Heat-foaming film or temporary bonding adhesive 710 Plastic compound I810 Plastic packaging material II820 Grinding surface I811 Grinding surface II821 Back of embedded adapter plate 813. DETAILED DESCRIPTION

[0013] The present application will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to explain the relevant inventions and are not intended to limit the inventions. It should also be noted that, for ease of description, only portions relevant to the relevant inventions are shown in the accompanying drawings. It should be noted that, unless there is a conflict, the embodiments and features in the embodiments of the present application may be combined with one another. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the examples.

[0014] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0015] The present invention provides a method for manufacturing an embedded adapter plate, such as Figure 2 As shown, the process flow is as follows: S101, pre-processing the package substrate and planting metal balls on the back; S102, temporarily bonding the front surface of the package substrate to a temporary bonding carrier; S103, plastic-sealing the back side of the package substrate and the metal balls, curing, and then performing the first thinning; S104, debonding the front side of the package substrate; S105, preparing a bridge chip unit and setting a first metal column group on the front side thereof; S106 , disposing a second metal pillar group on the front surface of the package substrate and mounting the bridge chip unit; S107, plastic-encapsulating the second metal pillar group and the bridge chip unit, and thinning them to expose the metal pillar end faces of the first metal pillar group and the second metal pillar group, and then providing a rewiring layer to form the front face of the embedded adapter board; S108, thinning the back side of the package substrate for the second time until the metal balls are exposed, thereby forming the back side of the embedded adapter plate and completing the structure of the embedded adapter plate; S109: The embedded adapter board performs electrical testing. Example

[0016] The above-mentioned method for manufacturing an embedded adapter plate can form an embedded adapter plate, such as Figures 3 to 6 As shown, it includes a package substrate 500, a bridge chip unit 100, a first metal pillar group 110, a second metal pillar group 210, metal balls 600 and a redistribution layer 400. The package substrate 500 includes a package substrate front surface 530 and a package substrate back surface 510 corresponding to the package substrate front surface 530.

[0017] The material of the packaging substrate 500 can be an organic substrate. The organic substrate is composed of BT resin, FR4, etc. It has good flexibility and low cost and can provide physical support for the bridge chip.

[0018] The package substrate back surface 510 is provided with a first solder pad 511, and the package substrate front surface 530 is provided with a second solder pad 531. The first and second solder pads 511 and 531 enable internal and external circuits of the chip to conduct electricity, extract signals, and provide good thermal conductivity. The package substrate front surface 530 also has a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second solder pads 531 are distributed around the patch area 550.

[0019] The material of the packaging substrate 500 can also be a glass substrate, such as Figure 4 As shown, a plurality of through holes 501 are provided that pass through the upper and lower surfaces, and a metal copper filler 507 is filled in the through holes 501. Then, a back-side rewiring metal layer 513 and a front-side rewiring metal layer 533 are provided on the upper and lower surfaces of the glass substrate, respectively, and input and output ports are provided. The specific form of the port includes a signal terminal array, a pad, or an opening, etc., which is illustrated here as a pad. The outermost layer of the back-side rewiring metal layer 513 is provided with a first pad 511, and the outer surface of the front-side rewiring metal layer 533 is provided with a second pad 531 and a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second pad 531 is distributed around the patch area 550.

[0020] The material of the packaging substrate 500 can also be a silicon substrate, such as Figure 5 As shown, it is provided with a number of through holes 501 that pass through the upper and lower surfaces, an oxide layer 503 is provided on the upper and lower surfaces of the through hole 501 and the silicon substrate, and a metal copper filler 507 is filled in the through hole 501. Then, a back-side rewiring metal layer 513 and a front-side rewiring metal layer 533 are provided on the upper and lower surfaces of the silicon substrate, respectively, and input and output ports are provided. The specific form of the port includes a signal terminal array, a pad or an opening, etc., which is illustrated here with a pad. The outermost layer of the back-side rewiring metal layer 513 is provided with a first pad 511, and the outer surface of the front-side rewiring metal layer 533 is provided with a second pad 531 and a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second pad 531 is distributed around the patch area 550.

[0021] A metal ball 600 is provided on the first solder pad 511, and the metal ball 600 is connected to the package substrate 500 to realize telecommunication connection, thereby realizing the lead-out of the substrate signal. The metal ball 600 used here is preferably a copper core solder ball, as shown in the figure, wherein the inner core is a copper core ball 610, the diameter of the copper core ball 610 is 100 to 500 microns, and the outer surface is wrapped with a layer of solder 630, the outer diameter of which is 120 to 530 microns. The solder 630 on the metal ball 600 works synergistically with the flux on the back side 510 of the package substrate, so that the metal ball 600 is better fixed to the package substrate 500. The copper core ball 610 of the metal ball 600 is in the shape of a spherical segment, and its cross section 601 is parallel to the back side 510 of the package substrate, and its cross section 601 is circular. The package substrate 500 and the metal ball 600 are sealed with a plastic encapsulation material I810, and the cross section 601 of the metal ball 600 is exposed to realize the lead-out of the back side signal, thereby forming the back side 813 of the embedded adapter board, as shown in FIG. Figure 3 As shown, the metal balls 600 help to increase the heat dissipation performance of the overall package structure. The back side 813 of the embedded adapter board can be provided with solder balls 650 or solder blocks that are fixedly connected to the metal balls 600, such as Figure 6 As shown, a solder ball 650 is used as an example. Generally, 20 micrometers ≤ the diameter D1 of the cross section 601 of the metal ball 600 - the ball diameter D2 of the solder ball 650 ≤ 40 micrometers.

[0022] Molding compound I810 can be in powder, liquid or sheet form. Depending on the state of the molding compound selected, the matching equipment and process are slightly different. During the operation of sheet molding compound, a laminator is required to make the molding compound adhere to the product surface.

[0023] The first metal pillar group 110 is disposed on the front surface of the bridge chip unit 100. The bridge chip unit 100 is mounted on the mounting area 550 of the package substrate front surface 530, and its back surface is fixed to the package substrate front surface 530 via an adhesive such as a DAF film 150. The second metal pillar group 210 is disposed around the bridge chip unit 100 in an array arrangement.

[0024] The second metal pillar group 210 and the bridge chip unit 100 are encapsulated with a plastic encapsulating compound II820 and then ground and thinned to expose the ground end surfaces of the first metal pillar group 110 and the second metal pillar group 210 to facilitate signal extraction. The rewiring layer 400 is disposed on the ground surface to achieve telecommunication connection with the first metal pillar group 110 and the second metal pillar group 210. A third pad 430 is formed on the last metal layer. A window is opened in the passivation layer above the third pad 430 to expose the third pad 430 (the third pad 430 needs to be treated to prevent oxidation). This facilitates subsequent welding and integration of multiple chips, achieving signal interconnection and conduction of multiple chips, and forming the front surface 450 of the embedded adapter board.

[0025] Molding compound II820 can be selected in powder, liquid or sheet form. The matching equipment and process are slightly different depending on the state of the molding compound selected. During the operation of sheet molding compound, a laminator is required to make the molding compound adhere to the product surface.

[0026] At this point, the newly reconstructed adapter board realizes the conduction of all signals on the front and back sides of the package substrate and the embedded bridge chip, forming a new embedded adapter board.

[0027] The above-mentioned embedded adapter plate can be realized by the specific process of the manufacturing method of the embedded adapter plate of the present invention, such as Figures 7A to 7P As shown, the process is as follows: Step 1, see 7A to 7D As shown, the incoming packaging substrate 500 is pre-processed and a metal ball 600 is implanted on the back. The material of the packaging substrate 500 can be an organic substrate, a glass substrate, or a silicon substrate. A first solder pad 511 is provided on the back 510 of the packaging substrate, and a second solder pad 531 is provided on the front 530 of the packaging substrate. The first solder pad 511 and the second solder pad 531 can make the internal and external circuits of the chip conductive, lead out signals, and have good thermal conductivity, etc. The front 530 of the packaging substrate is also provided with a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second solder pad 531 is distributed around the patch area 550. Figure 7A .

[0028] Among them, the formation process of the glass substrate is as follows: the incoming glass is formed into a number of through holes 501 that pass through the upper and lower surfaces through a laser and etching process, and then the through holes 501 and the upper and lower surfaces of the glass substrate are filled with a double-sided copper plating process to form surface copper 503, and then the surface copper on the upper and lower surfaces of the glass substrate is removed by a chemical mechanical polishing (CMP) process, leaving only the metal copper filler 507 in the through hole 501, and then the back rewiring metal layer 513 and the front rewiring metal layer 533 are respectively provided on the upper and lower surfaces of the glass substrate, and input and output ports are provided. The specific form of the port includes a signal terminal array, a pad or an opening, etc., which is illustrated here with a pad. The outermost layer of the back rewiring metal layer 513 is provided with a first pad 511, and the outer surface of the front rewiring metal layer 533 is provided with a second pad 531 and a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second pad 531 is distributed around the patch area 550. See Figure 7B , which is a schematic diagram of the process flow of forming a glass substrate.

[0029] The silicon substrate formation process is as follows: A Bosch etching process is used to form several through-holes 501 through the upper and lower surfaces of the incoming substrate. An oxide layer 503 is then formed on the through-holes 501 and the upper and lower surfaces of the silicon substrate using thermal oxygen or plasma-enhanced chemical vapor deposition (PECVD). A double-sided copper plating process is then used to form surface copper 503. The surface copper on the upper and lower surfaces of the silicon substrate is then removed using a chemical mechanical polishing (CMP) process, leaving only the through-holes 501 filled with a metallic copper filler 507. A backside rewiring metal layer 513 and a frontside rewiring metal layer 533 are then formed on the upper and lower surfaces of the silicon substrate, respectively, along with input and output ports. The ports can take the form of signal terminal arrays, pads, or openings, with pads being used as an example here. The outermost layer of the back rewiring metal layer 513 is provided with a first pad 511, and the outer surface of the front rewiring metal layer 533 is provided with a second pad 531 and a patch area 550 reserved for the chip. The patch area 550 is arranged in an array, and the second pad 531 is distributed around the patch area 550. Figure 7C , which is a schematic diagram of the process flow for forming a silicon substrate.

[0030] The shape of the package substrate 500 can be rectangular or circular. The package substrate 500 used in this embodiment is rectangular and has no size limit, so as to facilitate the subsequent ball implantation process and cutting and mounting process (see step 2).

[0031] After pre-processing, such as baking the package substrate 500, a layer of flux is brushed on the back side 510 of the package substrate through a ball planting steel mesh, and the metal ball 600 is soldered to the first pad 511 on the back side 510 of the package substrate through a ball planting (Ball Drop) process. The metal ball 600 is connected to the package substrate 500 to achieve telecommunication connection and realize the extraction of substrate signals. The metal ball 600 used here is preferably a copper core solder ball, such as Figure 7D As shown, the core of the copper ball 610 has a diameter of 100 to 500 microns. It is coated with a layer of solder 630 with an outer diameter of 120 to 530 microns. The solder 630 on the metal ball 600 works synergistically with the flux on the back of the package substrate 510 to better secure the metal ball 600 to the package substrate 500. Subsequent flux cleaning and other steps are conventional and will not be described in detail.

[0032] Step 2, see Figure 7EAs shown, the front side of the packaging substrate 500 is temporarily bonded to the temporary bonding carrier 700. The specific process is as follows: take a temporary bonding carrier 700, whose conventional thickness ranges from 150 microns to 800 microns, and whose shape is consistent with a conventional wafer or substrate. A thermal foam film is attached to the temporary bonding carrier 700 or a layer of temporary bonding glue 710 is coated; the packaging substrate 500 with the metal balls 600 (the metal balls 600 face upwards) is attached to the temporary bonding carrier 700 in the form of strips or single pieces through a mounting process combination, and the front side 530 of the packaging substrate and the temporary bonding carrier 700 are fixed by the foam film or temporary bonding glue 710, as shown. Figure 7E The temporary bonding carrier 700 can be made of metal or glass. Metal is commonly used for thermal debonding, while glass is suitable for both thermal debonding and laser debonding.

[0033] If the package substrate 500 is mounted in a single piece or strip form, it is necessary to add a cutting process for the package substrate 500 before mounting.

[0034] Step 3, see Figure 7F As shown, through the molding process, the back of the packaging substrate 500 is molded with the molding compound I810 to mold the packaging substrate 500 and the metal balls 600, and then cured. The specific process is as follows: Through the molding process, the packaging substrate 500 and the metal balls 600 are molded with the molding compound I810, and the packaging substrate 500 and the metal balls 600 are protected in the plastic package, thereby forming a reconstructed wafer or reconstructed panel, as shown in FIG. Figure 7F shown.

[0035] Molding compound I810 can be in powder, liquid or sheet form. Depending on the state of the molding compound selected, the matching equipment and process are slightly different. During the operation of sheet molding compound, a laminator is required to make the molding compound adhere to the product surface.

[0036] See also Figure 7G As shown, the back side of the package substrate 500 is thinned for the first time. The specific process is as follows: the entire surface of the plastic encapsulation material 1810 is thinned for the first time through a grinding process to form a grinding surface 1811. The remaining height h1 of the plastic encapsulation material 1810 from the top of the metal ball 600 to the grinding surface 1811 is ≥ 100 microns, thereby improving the flatness of the reconstructed wafer or panel.

[0037] Step 4, see Figure 7H As shown, the front side of the package substrate 500 is debonded. The specific process is as follows: according to the selected temporary bonding carrier 700 material and the characteristics of the temporary bonding material, the debonding process is performed, see Figure 7HAs shown, the temporary bonding carrier 700 is peeled off by a heating debonding process, and the temporary bonding carrier 700 is removed to expose the front side 530 of the package substrate. The front side 530 of the package substrate is provided with a second solder pad 531 and a patch area 550 reserved for the chip.

[0038] Step 5, see Figure 7I As shown, a bridge chip unit 100 is prepared. The specific process is as follows: a wafer is taken, its backside thinned to the designed thickness, and then a DAF film 150 or other adhesive is applied. A first group of metal pillars 110 is arranged on the front side, perpendicular to the wafer. The metal pillars of the first group of metal pillars 110 are preferably made of copper. The metal pillars of the first group of metal pillars 110 can be circular or rectangular, and their distribution density depends on the reserved space of the chip. After dicing, a plurality of bridge chip units 100 are formed. The bridge chip unit 100 can be made of silicon or glass, and the chip substrate thickness is approximately 10 to 75 microns.

[0039] Step 6, see Figure 7J As shown, a second metal column group 210 is provided on the front of the package substrate 500. The specific process is as follows: the wafer or panel is flipped over, with the package substrate front 530 facing upward, and the second metal column group 210 is formed on the second pad 531 of the package substrate 500 through photolithography and electroplating processes.

[0040] The metal pillars of the second metal pillar group 210 can be circular pillars or rectangular pillars, and their distribution density depends on the reserved space on the chip and the adapter board and the complexity of the interconnection relationship. Generally, the second metal pillars of the second metal pillar group 210 have a diameter range of 60 microns to 80 microns, a spacing range of 110 microns to 140 microns, and are distributed perpendicular to the wafer. The material is preferably copper. In this embodiment, the second metal pillar group 210 is illustrated as a copper pillar. The height h3 of the second metal pillar group 210 is greater than the overall thickness h2 of the bridge chip monomer 100 with the first metal pillar group 110. The second metal pillar group 210 realizes telecommunication connection with the packaging substrate 500.

[0041] See also Figure 7K As shown, the bridge chip unit 100 is mounted upright. The specific process is as follows: the bridge chip unit 100 is attached to the chip mounting area 550 on the front of the package substrate 500 using a mounting process. The number of bridge chip units 100 mounted depends on the overall packaging solution requirements and is at least one.

[0042] Step 7, see Figure 7L and Figure 7MAs shown, the front side of the package substrate 500 is plastic-encapsulated and thinned. The specific process is as follows: A molding process is performed. The second metal pillar group 210 and the bridge chip unit 100 are plastic-encapsulated with a plastic encapsulating compound II820 and cured, protecting the copper pillars and the bridge chip unit 100 within the plastic encapsulation. The entire surface is then thinned through a grinding process to form a grinding surface II821. The grinding surface II821 exposes the polished end surfaces of the metal pillars of the first metal pillar group 110 and the second metal pillar group 210 to facilitate signal extraction.

[0043] Molding compound II820 can be selected in powder, liquid or sheet form. The matching equipment and process are slightly different depending on the state of the molding compound selected. During the operation of sheet molding compound, a laminator is required to make the molding compound adhere to the product surface.

[0044] See also Figure 7N As shown, a rewiring layer 400 is provided on the front side of the package substrate 500. The specific process is as follows: a passivation layer 410 is formed on the grinding surface II821 by a photolithography and development process, and windows are opened above the grinding end surfaces of the metal columns of the first metal column group 110 and the second metal column group 210 to which the signals are to be led out, so that the metal columns are exposed. Then, the rewiring layer 400 is formed by rewiring processes such as sputtering, photolithography, electroplating, degumming, and etching. The interconnection and conduction of all signals are achieved by superimposing multiple passivation layers and RDL layers, and a third pad 430 is formed on the last metal layer. A window needs to be opened in the passivation layer above the third pad 430 to expose the third pad 430 (the third pad 430 needs to be treated with anti-oxidation) to facilitate the subsequent welding and integration of multiple other chips, thereby achieving signal interconnection and conduction of multiple chips and forming the front side 450 of the embedded adapter board.

[0045] The RDL layer routes the signals connected to the metal pillars, providing a practical path between various pads and solder joints. The redistribution layer 400 forms a telecommunications connection with the package substrate 500 via the second metal pillar group 210, and simultaneously forms a telecommunications connection with the bridge chip unit 100 via the first metal pillar group 110, thus achieving signal interconnection between the bridge chip unit 100 and the package substrate 500.

[0046] Step 8, see Figure 7O As shown, the back side of the package substrate 500 is thinned a second time. The wafer or panel is flipped over, with the side of the package substrate 500 with the metal balls 600 facing upward. The molding compound 1810 is then thinned a second time through a grinding process until the copper core of the metal balls 600 is exposed, allowing for backside signal extraction, thus forming the back side of the embedded adapter board 813.

[0047] Step 9, see Figure 7PAs shown, the newly reconstructed adapter board has achieved all signal conduction on the front and back sides of the package substrate 500 and the embedded bridge chip. Before proceeding with other subsequent processes, the yield of the reconstructed adapter board can be determined through electrical testing and a map can be generated. Subsequent processes only need to be performed on the good adapter board, such as: integrating multiple subsequent chips (xPU / ASIC / HBM, etc.) to achieve signal interconnection and conduction of multiple chips, thereby improving the packaging yield of the overall solution and reducing waste caused by process defects. Figure 7P As shown, chip I910 and chip II910 are flipped on the front side 450 of the embedded adapter board, and the gap is filled with bottom filler 901, and then encapsulated again with plastic encapsulation material III850 to form a design structure in which the plastic encapsulation body is encapsulated on five sides, which can effectively protect the internal structure and improve the reliability of the reconstructed adapter board.

[0048] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the embodiments of the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. An embedded adapter board structure, comprising a packaging substrate, wherein the packaging substrate comprises a packaging substrate front surface and a packaging substrate back surface corresponding to the packaging substrate front surface. It is characterized in that It also includes a bridge chip unit, a first metal column group, a second metal column group, a metal ball and a rewiring layer. The metal ball is arranged on the back of the packaging substrate and fixedly connected, and the metal ball is in the shape of a spherical table; The plastic encapsulation material I encapsulates the package substrate and the metal pillars, and exposes the cross-section of the metal pillars to form the back of the embedded adapter board; the bridge chip unit is mounted upright on the front of the package substrate, the second metal pillar group is arranged around the bridge chip unit in an array, and the first metal pillar group is arranged on the front of the bridge chip unit; The plastic encapsulation material II encapsulates the second metal column group and the bridge chip monomer, and exposes the polished end surfaces of the metal columns of the first metal column group and the second metal column group. The rewiring layer is arranged on the polished surface to achieve telecommunication connection with the first metal column group and the second metal column group. Input and output ports are formed on the last metal layer of the rewiring layer to form the front side of the embedded adapter board.

2. The structure according to claim 1, characterized in that The packaging substrate is made of an organic substrate, a glass substrate or a silicon substrate.

3. The structure according to claim 2, characterized in that It also includes a backside rewiring metal layer and a frontside rewiring metal layer, which are respectively arranged on the upper and lower surfaces of the glass substrate or silicon substrate and are provided with input and output ports.

4. The structure according to claim 3, characterized in that It also includes a through hole, an oxide layer and a metal copper filler. The through hole passes through the upper and lower surfaces of the glass substrate or the silicon substrate. The oxide layer is arranged on the inner wall of the through hole of the silicon substrate and the upper and lower surfaces of the silicon substrate. The metal copper filler is filled in the through hole.

5. The structure according to claim 1, characterized in that The inner core of the metal ball is a copper core ball, and the outer core of the metal ball is wrapped with a layer of solder.

6. The structure according to claim 1, characterized in that The back surface of the bridge chip unit is fixedly connected to the front surface of the packaging substrate by adhesive.

7. The structure according to any one of claims 1 to 6, characterized in that The cross section of the metal ball is parallel to the back side of the packaging substrate, and a solder ball is provided to be fixedly connected to the metal ball, and 20 microns ≤ the diameter D1 of the cross section of the metal ball - the ball diameter D2 of the solder ball ≤ 40 microns.

8. A method for manufacturing an embedded adapter plate, the process steps of which are as follows: Step 1: pre-treating the packaging substrate and implanting metal balls on the back side, wherein the packaging substrate is made of an organic substrate, a glass substrate or a silicon substrate; Step 2: temporarily bonding the front surface of the package substrate to a temporary bonding carrier; Step 3: Through the molding process, the substrate and the metal balls are encapsulated with a molding compound I, and then cured, and then the first thinning is performed; Step 4: Debonding the front side of the package substrate; Step 5: Prepare a bridge chip unit and set a first metal column group on the front side; Step 6: a second metal column group is provided on the front surface of the package substrate and the bridge chip unit is mounted upright, wherein the height h3 of the second metal column group is greater than the overall thickness h2 of the bridge chip unit with the first metal column group; Step 7: Plastic-encapsulate the second metal pillar group and the bridge chip unit, and thin them to expose the metal pillar end faces of the first metal pillar group and the second metal pillar group. Then, a rewiring layer is provided, and input and output ports are formed on the last metal layer of the rewiring layer to form the front face of the embedded adapter board. Step 8: The back of the package substrate is thinned for the second time until the cross section of the metal ball is exposed, forming the back of the embedded adapter plate and completing the structure of the embedded adapter plate; Step nine: perform electrical testing on the embedded adapter board.

9. The production method according to claim 8, characterized in that: In step 1, the glass substrate is formed by the following process: a plurality of through-holes penetrating the upper and lower surfaces of the incoming glass are formed by laser and etching processes, and then the through-holes and the upper and lower surfaces of the glass substrate are filled with copper by a double-sided copper plating process to form surface copper. Then, the surface copper on the upper and lower surfaces of the glass substrate is removed by a chemical mechanical polishing process, leaving only the metal copper filling in the through-holes, and then a back-side rewiring metal layer and a front-side rewiring metal layer are respectively provided on the upper and lower surfaces of the glass substrate; The silicon substrate is formed as follows: a plurality of through-holes penetrating the upper and lower surfaces of the incoming substrate are formed by a Bosch etching process, an oxide layer is formed on the through-holes and the upper and lower surfaces of the silicon substrate in sequence by a thermal oxygen or plasma-enhanced chemical vapor deposition process, and surface copper is formed by a double-sided copper plating process, and then the surface copper on the upper and lower surfaces of the silicon substrate is removed by a chemical mechanical polishing process, and only a metal copper filler is filled in the through-holes, and then a back-side rewiring metal layer and a front-side rewiring metal layer are respectively provided on the upper and lower surfaces of the silicon substrate.

10. The manufacturing method according to claim 9, characterized in that: In step 1, the package substrate with the metal balls implanted on the back is cut into single pieces or strips through a cutting process.

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