Film coating method and film coating system
By combining the coating method of the super-atom beam source with the sputtering source, the problems of surface defects, high stress and high resistivity of the film layer in ion beam sputtering coating are solved, the density and smoothness of the film layer are improved, and the stress and resistivity of the film layer are reduced.
Patent Information
- Application Number
- CN202510965016.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-14
- Publication Date
- 2025-10-14
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
In the existing ion beam sputtering coating technology, problems such as fine grains, dense micro-defects, sharp strain contours, high stress and high resistivity appear on the film surface, and the use of auxiliary ion sources leads to a decrease in film deposition rate and severe erosion of the film interface.
By combining a superatomic beam source with a sputtering source, in a vacuum environment, a high-kinetic-energy, low-speed superatomic beam is used to perform lateral sputtering and local thermal annealing on the target surface to enhance the density and surface smoothness of the film layer, while controlling the film layer thickness to reduce stress and resistivity.
The smoothness of the film surface and the lattice quality are improved, the stress and resistivity of the film are reduced, the density and uniformity of the film are improved, and the formation of ridge-like tissue is avoided.
Smart Images
Figure CN120776252A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor material processing, and in particular to a film plating method and a film plating system. BACKGROUND
[0002] Film plating is an important process in semiconductor material processing, and different film layers are formed on the surface of the semiconductor material through the film plating process to increase the functionality of the semiconductor material. Ion beam sputtering film plating is a commonly used film plating method, and the film layer formed by ion beam sputtering film plating has certain advantages in adhesion, compactness and lattice texture. However, the ion source used in ion beam sputtering film plating has high energy, and the high-energy particle flow, including sputtered atoms and reflected argon ions, will be directed to the surface of the semiconductor material, resulting in the phenomenon that the surface of the film layer in the growth of the semiconductor material is etched by sputtered atoms, which is a typical result of using an ion beam for directional sputtering film plating. Microstructure analysis shows that this process leads to smaller grains, denser microdefects, sharp strain profiles and the formation of metastable beta phase on the film layer, which are consistent with the film layer having high stress and high resistivity, and these characteristics of the film layer are not desirable.
[0003] In the prior art, the above phenomenon is improved by adding an auxiliary ion source, and by applying a high-flux, low-energy auxiliary ion beam to the growing film, the sputtered atoms can improve the microdefects and strain profile density inside the grains. However, the sputtering effect of the auxiliary ion source will cause the deposition rate of the film layer to drop sharply, and even the beam flow between the auxiliary ion source and the main ion source will cancel out, causing the surface of the film layer to be severely eroded by the main ion source, and the film layer interface may have more serious ridge-shaped organization. SUMMARY
[0004] The purpose of the present application is to provide a film plating method and a film plating system that can improve the smoothness of the film layer surface and the surface lattice quality, and effectively reduce the stress and resistivity of the film layer.
[0005] To achieve this purpose, the present application adopts the following technical solutions:
[0006] The film plating method comprises:
[0007] S1, arranging a target material and a receptor material in the chamber, so that the target material and the receptor material are in a relative posture; arranging a sputtering source and an ultratomic beam source on the wall surface of the chamber, respectively;
[0008] S2, preparing a vacuum environment in the chamber, so that the vacuum degree in the chamber is maintained at 1e -7 Pa-9e -4 Pa;
[0009] S3, starting the sputtering source to make the sputtering source emit an ion beam and bombard the target material, and the power of the sputtering source can make the surface of the target material produce sputtering atoms after the ion beam bombardment, and the sputtering atoms are deposited on the surface of the receptor material;
[0010] S4, starting the super atom beam source to make the super atom beam source emit a super atom beam and irradiate the receptor material, the proportion of super atoms in the super atom beam is greater than 90%, and the number of elementary particles in a single super atom is greater than or equal to 300; the super atom beam provides lateral kinetic energy for the sputtering atoms on the surface of the receptor material;
[0011] S5, after the film thickness reaches the requirement, the sputtering source and the super atom beam source are turned off; the vacuum state in the cavity is released, and the receptor material after film coating is taken out.
[0012] As an optional technical solution of the film coating method, the internal temperature of the cavity is kept at 25-70℃ during the film coating process.
[0013] As an optional technical solution of the film coating method, the film coating method further comprises S11 after S1, and S11 is to start the super atom beam source to irradiate the surface of the receptor material.
[0014] And / or, the film coating method further comprises S41 after S4, and S41 is to first turn off the sputtering source, and then delay the turning off of the super atom beam source.
[0015] A film coating system is applied to the film coating method as described in any one of the above, and the film coating system comprises:
[0016] A cavity, wherein the cavity is provided with a vacuum pump for selectively making the cavity reach a vacuum state;
[0017] A target material, wherein the target material is fixed in the cavity at a preset angle;
[0018] A receptor material, wherein the receptor material is arranged in the cavity, and the receptor material is arranged at intervals with the target material;
[0019] A sputtering source, wherein the sputtering source is arranged on the wall surface of the cavity, the sputtering source is used to emit an ion beam to the target material, the target material can receive the ion beam to make the surface of the target material produce sputtering atoms, and the side of the receptor material close to the target material can receive the sputtering atoms;
[0020] A super atom beam source, wherein the super atom beam source is arranged on the wall surface of the cavity, and the super atom beam source is used to emit a super atom beam to the receptor material.
[0021] As an optional technical solution of the coating system, the coating system further comprises an electrostatic field scanning device, which is arranged at the emission end of the hyperatom beam, and is used for changing the irradiation path of the hyperatom beam, so that the hyperatom beam reciprocally scans the side of the receptor material close to the target material.
[0022] As an optional technical solution of the coating system, the coating system further comprises an electrostatic lens device, which is arranged at the emission end of the hyperatom beam, and is used for expanding the beam of the hyperatom beam, so that the irradiation surface of the hyperatom beam covers the side of the receptor material close to the target material.
[0023] As an optional technical solution of the coating system, the receptor material is movably connected with the chamber through a support arm, the support arm can drive the receptor material to rotate around the central axis, and the support arm can change the relative angle between the receptor material and the target material.
[0024] As an optional technical solution of the coating system, the coating system further comprises a heating device, which is arranged inside and / or outside the chamber.
[0025] As an optional technical solution of the coating system, the coating system further comprises a neutralizer, which is used for neutralizing the positive charge in the chamber.
[0026] As an optional technical solution of the coating system, the distance between the center of the end face of the sputtering source and the center of the target material ranges from 10 cm to 70 cm, the included angle between the axis of the sputtering source and the normal line of the target material ranges from 10° to 80°; the distance between the center of the end face of the hyperatom beam source and the center of the receptor material ranges from 20 cm to 100 cm; the distance between the center of the target material and the center of the receptor material ranges from 20 cm to 100 cm, and the included angle between the normal line of the target material and the normal line of the receptor material ranges from ± 50°.
[0027] The beneficial effects of the present application are as follows:
[0028] The coating method provided by the present application comprises the following steps: arranging a target material and a receptor material in a relative posture in a chamber, arranging a sputtering source and a hyperatom beam source on the wall surface of the chamber respectively; preparing a vacuum environment in the chamber, so that the vacuum degree in the chamber is maintained at 1e -7 Pa-9e -4Pa. The sputtering source is started to make the sputtering source emit an ion beam and bombard the target material, and the power of the sputtering source can make the surface of the target material produce sputtering atoms after being bombarded by the ion beam, the sputtering atoms sputtered from the surface of the target material are received by the receptor material, and the sputtering atoms are deposited on the surface of the receptor material. The hyperatom beam source is started to make the hyperatom beam source emit a hyperatom beam and irradiate the receptor material, the proportion of hyperatoms in the hyperatom beam is greater than 90%, and the number of elementary particles in a single hyperatom is greater than or equal to 300; by utilizing the characteristics of high kinetic energy and low speed of hyperatoms, the hyperatom beam will collide with the sputtering atoms located on the surface of the receptor material to be deposited into a film layer, and the kinetic energy of the sputtering atoms is increased, so that the film layer formed by the movement of the sputtering atoms on the surface of the receptor material is more dense. At the same time, by utilizing the lateral sputtering effect of hyperatoms, the sputtering atoms on the protrusions of the surface of the receptor material are deposited into the grooves of the surface of the receptor material, thereby reducing the etching rate of the grooves, realizing uniform atomic-level deposition effect, and reducing the formation of ridge-shaped organizations of the film layer; when the hyperatoms collide with the surface of the receptor material, the hyperatoms have high kinetic energy, not only the lateral sputtering effect appears, but also the local thermal annealing effect appears, which can effectively help the sputtering atoms to improve the surface smoothness and surface lattice quality of the film layer of the receptor material. After the film thickness reaches the requirement, the sputtering source and the hyperatom beam source are turned off; the vacuum state in the cavity is released, and the receptor material after film coating is taken out. The film coating method is used for coating the film on the surface of the receptor material, and can effectively reduce the stress and resistivity of the film layer.
[0029] The film coating system provided by the application is applied to the film coating method described above, and comprises a chamber, a target material, a receptor material, a sputtering source and a hyperatom beam source. The chamber is provided with a vacuum pump to provide an efficient vacuum environment for film coating. The target material is fixed in the chamber at a preset angle. The receptor material is also placed in the chamber and is arranged apart from the target material. The sputtering source is arranged on the wall surface of the chamber and is used to emit an ion beam to the target material. The target material can receive the bombardment of the ion beam to produce sputtering atoms on the surface of the target material. The side of the receptor material close to the target material can receive the sputtering atoms and start to grow a film layer on the surface. Meanwhile, the hyperatom beam source is arranged on the wall surface of the chamber and is used to emit a hyperatom beam to the receptor material. BRIEF DESCRIPTION OF DRAWINGS
[0030] Figure 1 is a schematic diagram of the arrangement structure of the sputtering system provided by the embodiment of the application;
[0031] Figure 2 is a schematic diagram of the irradiation of the sputtering system selected by the electrostatic field scanning device provided by the embodiment of the application;
[0032] Figure 3 is a schematic diagram of the irradiation of the sputtering system selected by the electrostatic lens device provided by the embodiment of the application.
[0033] In the drawings:
[0034] 100, chamber; 200, target material; 300, acceptor material; 400, sputtering source; 500, neutralizer; 600, super atom beam source; 700, electrostatic field scanning device; 800, electrostatic lens device. DETAILED DESCRIPTION
[0035] The application will be further described below in conjunction with the drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the application and are not to be used to limit the application. In addition, it should be noted that only the parts related to the application are shown in the drawings for the convenience of description.
[0036] In the description of the application, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.
[0037] In the present application, unless otherwise explicitly specified and limited, "on" or "under" the first feature of the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.
[0038] In the description of the present embodiment, the terms "up", "down", "right", "left" and other orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application. In addition, the terms "first" and "second" are only used to distinguish in description and have no special meaning.
[0039] As Figures 1 to 3 shown, the application discloses a coating method and a coating system, and the coating system is a matching equipment and material for applying the coating method.
[0040] The coating system comprises a chamber 100, a target material 200, a receptor material 300, a sputtering source 400 and a super atom beam source 600. The chamber 100 is configured with a vacuum pump for selectively bringing the chamber 100 to a vacuum state to provide a high-efficiency vacuum environment for coating. The vacuum pump needs to be pumped to form a vacuum state during work, but in the non-working state, the chamber 100 is normally in an atmospheric state. The target material 200 is fixed at a preset angle inside the chamber 100; the receptor material 300 is also placed inside the chamber 100 and is spaced apart from the target material 200. The sputtering source 400 is arranged on the wall surface of the chamber 100, and is used to emit an ion beam to the target material 200. The target material 200 can receive the bombardment of the ion beam to generate sputtering atoms on the surface of the target material 200. The side of the receptor material 300 close to the target material 200 can receive the sputtering atoms and start growing a film layer on the surface. At the same time, the super atom beam source 600 is arranged on the wall surface of the chamber 100, and is used to emit a super atom beam to the receptor material 300. The sputtering atoms are deposited on the surface of the receptor material 300 at the same time, and the super atom beam reaches the surface of the receptor material 300. By using the characteristics of high kinetic energy and low speed of the super atom, the sputtering atoms are collided to increase the kinetic energy of the sputtering atoms, so that the sputtering atoms are more dense after moving and depositing on the surface of the receptor material 300. At the same time, by using the lateral sputtering effect of the super atom, the sputtering atoms on the protrusions of the surface of the receptor material 300 are deposited to the recesses of the surface of the receptor material 300, so as to reduce the etching rate of the recesses and realize uniform atomic-level deposition effect, which can reduce the formation of ridge-shaped structure of the film layer.
[0041] It can be understood that the super atom is a nanoparticle with a diameter of nanometer combined by gas molecules through van der Waals force, and the number of gas molecules contained therein is from hundreds to thousands. The super atom can be regarded as an "atom" as a whole when ionized collision and electromagnetic field motion. Compared with a single atom, the particle mass and collision cross section of the super atom are increased by several to several thousand times, so the super atom has the characteristics of high energy and low speed. The proportion of super atoms in the super atom beam is greater than 90%, and the number of elementary particles in a single super atom is greater than or equal to 300. When the super atom collides with the surface of the receptor material 300, the super atom has high kinetic energy, which can cause lateral sputtering effect and local thermal annealing effect, and can effectively help the sputtering atoms to improve the surface smoothness and surface lattice quality of the film layer of the receptor material 300.
[0042] Exemplarily, the receptor material 300 is a semiconductor material, and specifically can be a wafer, which is particularly referred to as a circular shape and is used most frequently. The receptor material 300 in the present application is not limited to a circular sheet.
[0043] In the embodiment, the coating system further comprises a neutralizer 500, which is used to neutralize unnecessary positive charges in the chamber 100, avoid the accumulation of charges on the surface of the target material 200 and the receptor material 300, and eliminate the space charge effect.
[0044] The coating method is to use the coating system as described above to prepare a film layer, and the specific operation steps are as follows: S1, first arrange the target material 200 and the receptor material 300 in the chamber 100, so that the target material 200 and the receptor material 300 are in a relative posture; arrange the sputtering source 400 and the super atom beam source 600 on the wall surface of the chamber 100, respectively. S2, prepare a vacuum environment in the chamber 100, and keep the vacuum degree in the chamber 100 at 1e -7 Pa-9e -4 Pa. S3, start the sputtering source 400, so that the sputtering source 400 emits an ion beam which will hit the target material 200 after being neutralized by the neutralizer 500, and the power of the sputtering source 400 can make the target material 200 surface produce sputtering atoms after being hit by the ion beam. The sputtering atoms sputtered from the surface of the target material 200 are received by the receptor material 300, and the sputtering atoms are deposited on the side of the receptor material 300 close to the target material 200. S4, start the super atom beam source 600, so that the super atom beam source 600 emits a super atom beam which irradiates the side of the receptor material 300 close to the target material 200; by using the characteristics of high kinetic energy and low speed of the super atom, the super atom beam will collide with the sputtering atoms on the surface of the receptor material 300 which will be deposited into a film layer, and the super atom beam as an auxiliary source provides lateral kinetic energy for the sputtering atoms on the surface of the receptor material 300, so as to improve the film coating density and grain state. S5, after the film coating thickness reaches the required thickness, the film coating process is completed, and the sputtering source 400 and the super atom beam source 600 are turned off; after the film coating is completed, the vacuum state in the chamber is released, and the receptor material 300 after film coating is taken out.
[0045] Among them, the two operation steps of S2 and S3 can not be limited in sequence, but it is necessary to ensure that the sputtering source 400 and the super atom beam source 600 have a common opening state for a long time, and at the same time, the target material 200 and the receptor material 300 can keep self-rotating motion respectively. The coating method is used for coating on the surface of the receptor material 300, which can effectively reduce the stress and resistivity of the film layer.
[0046] Further, the coating method further comprises S11 after S1, S11 is to start the hyperatom beam source 600 to irradiate the surface of the receptor material 300; the hyperatom beam source 600 is started alone before the sputtering source 400 is started, the surface of the receptor material 300 is irradiated or scanned by the hyperatom beam, the oxidation layer on the surface of the receptor material 300 can be removed by the transverse sputtering effect of the hyperatom beam, the roughness of the surface of the receptor material 300 is reduced, the dangling bond is increased, and the surface adhesion is improved, and then the sputtering source 400 is started, and the receptor material 300 is coated by the hyperatom beam source 600 together, so that the surface impurities of the receptor material 300 can be effectively cleaned, and the coating surface state is improved.
[0047] Optionally, the coating method further comprises S41 after S4, S41 is to close the sputtering source 400 first after coating is completed, and then delay closing the hyperatom beam source 600, so that the hyperatom beam continues to scan and irradiate or fully cover the surface of the receptor material 300, to further optimize the coating quality.
[0048] Exemplarily, the internal temperature of the chamber 100 should be kept at 25-70℃ during the coating process.
[0049] Specifically, the hyperatom beam source 600 generates hyperatoms by using an ultrasonic nozzle, and the hyperatoms form a high-energy hyperatom beam after ionization, acceleration, magnetic screening and shaping processes. The ionized hyperatom beam is filtered and screened by a magnetic field again to remove other atoms and ions that do not form hyperatoms. The magnetic field is a ring-shaped magnetic field with a certain length, the center of the ring-shaped magnetic field is a uniform magnetic field, and the magnetic field strength gradually increases from the center to the outside along the radial direction of the ring-shaped magnetic field. Exemplarily, the uniform magnetic field strength at the center of the ring-shaped magnetic field is 0.05-0.70T, and the length of the magnetic field is 2-20cm.
[0050] It can be understood that the shaping includes expansion or scanning, and the hyperatom beam source processing device can change the shape and irradiation path of the hyperatom beam.
[0051] As shown in FIG. Figure 2 The coating system further comprises an electrostatic field scanning device 700, the electrostatic field scanning device 700 is used as the hyperatom beam source processing device, the electrostatic field scanning device 700 is arranged at the emission end of the hyperatom beam, and is used to change the irradiation path of the hyperatom beam, so that the hyperatom beam reciprocally moves to scan the side of the receptor material 300 close to the target material 200, and the same effect of irradiating the surface of the receptor material 300 can be formed. The working principle of the electrostatic field scanning device 700 can be to deflect charged particles in an electric field by force, to control the trajectory in real time by adjusting the voltage of the deflection plate; or to scan charged particles by using the Lorentz force through an alternating magnetic field, as long as the electrostatic field scanning device 700 is based on the above principle, and the specific form is not limited.
[0052] As Figure 3 shown in the middle, the coating system further comprises an electrostatic lens device 800, taking the electrostatic lens device 800 as the hyperatom beam source processing device, the electrostatic lens device 800 is arranged at the emission end of the hyperatom beam, used for expanding the beam of the hyperatom beam, so that the irradiation surface of the hyperatom beam after expanding by the electrostatic lens device 800 covers one side of the acceptor material 300 close to the target material 200, so as to completely irradiate the acceptor material 300. The core of the beam expansion of the electrostatic lens device 800 is to generate an off-axis electric field through the electrode potential configuration, so that the charged particles obtain radial divergence speed, thereby expanding the beam diameter, and the electrostatic lens device 800 based on this principle can be used, without limiting the specific form.
[0053] Exemplarily, the sputtering source 400 adopts a DC or RF type Kaufman ion source, which is characterized by accurate control of ion energy and beam density, and is not affected by the environment; the working temperature is relatively low, and the pollution amount is small.
[0054] In this embodiment, the sputtering source 400 adopts a hot cathode plasma discharge mode or an inductively coupled plasma discharge mode to generate ions, and the ions are introduced into the chamber 100 through the grid structure to form a single-energy ion beam with a specific beam distribution.
[0055] Specifically as Figure 1 shown, the distance L1 between the center of the end surface of the sputtering source 400 and the center of the target material 200 is in the range of 20-60 cm, the included angle between the axis of the sputtering source and the normal line of the target material is in the range of 10°-80°; the distance L2 between the center of the end surface of the hyperatom beam source 600 and the center of the acceptor material 300 is in the range of 20-100 cm. The relative attitude of the target material 200 and the acceptor material 300 is set, the distance L3 between the center of the target material 200 and the center of the acceptor material 300 is in the range of 20-100 cm; in cooperation with the target material 200 installed at a preset angle, the included angle between the normal line of the target material and the normal line of the acceptor material is in the range of ±50°, so that the ion beam and the hyperatom beam can smoothly form a common coating sputtering path.
[0056] Further, the acceptor material 300 is movably connected with the chamber 100 through a support arm, the support arm can drive the acceptor material 300 to rotate along the central axis, and the support arm can change the relative angle between the acceptor material 300 and the target material 200, which is helpful to improve the uniformity of coating by changing the position of the acceptor material 300 in the chamber 100 or adjusting the installation angle of the acceptor material 300. An installation chuck is arranged on the support arm, the acceptor material 300 is assembled on the installation chuck, and the installation chuck can be driven to rotate by a driving mechanism, so as to realize the rotation of the acceptor material 300.
[0057] Specifically, the coating system further comprises a heating device arranged inside the chamber 100 or arranged in parallel with the inside and outside of the chamber 100, for improving the ambient temperature in the chamber 100, and for collectively heating the inside and outside of the chamber wall of the chamber 100, so as to accelerate the removal of gas impurities such as water vapor attached to the surface of the chamber wall and internal parts, accelerate the establishment of an ultra-high vacuum environment, and effectively reduce the coating quality problems caused by gas impurities.
[0058] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation modes of the present application. For those skilled in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present application. It is unnecessary and impossible to enumerate all the implementation modes. Any modification, equivalent substitution and improvement within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.
Claims
1. A film coating method, characterized in that: include: S1. Arranging a target material (200) and an acceptor material (300) in a chamber (100) so that the target material (200) and the acceptor material (300) are in a relative posture; arranging a sputtering source (400) and a super-atom beam source (600) on the wall surface of the chamber (100) respectively; S2. Prepare a vacuum environment in the chamber (100) so that the vacuum degree in the chamber (100) is maintained at 1e -7 Pa-9e -4 Pa; S3, starting the sputtering source (400), causing the sputtering source (400) to emit an ion beam and bombard the target material (200), and the power of the sputtering source (400) can generate sputtered atoms on the surface of the target material (200) after the ion beam bombards, and the sputtered atoms are deposited on the surface of the receptor material (300); S4. Starting the super-atom beam source (600), causing the super-atom beam source (600) to emit a super-atom beam and irradiate the receptor material (300), wherein the super-atoms in the super-atom beam account for more than 90%, and the number of elementary particles in a single super-atom is greater than or equal to 300; and the super-atom beam provides transverse kinetic energy to the sputtered atoms on the surface of the receptor material (300); S5. After the coating thickness reaches the required value, the sputtering source (400) and the super-atom beam source (600) are turned off; the vacuum state in the chamber is released, and the coated receptor material (300) is taken out.
2. The coating method according to claim 1, wherein: During the coating process, the internal temperature of the chamber (100) is maintained at 25°C-70°C.
3. The coating method according to claim 1, wherein: The coating method further comprises S11 after S1, wherein S11 is to start the super-atom beam source (600) to irradiate the surface of the receptor material (300); And / or, the coating method further comprises S41 after performing S4, wherein S41 is to first turn off the sputtering source (400) and then delay turning off the super-atom beam source (600).
4. The coating system is characterized in that: Applied to the coating method according to any one of claims 1 to 3, the coating system comprises: A chamber (100), wherein the chamber (100) is equipped with a vacuum pump, and the vacuum pump is used to selectively bring the chamber (100) into a vacuum state; a target (200), wherein the target (200) is fixed inside the chamber (100) at a preset angle; An acceptor material (300), the acceptor material (300) being disposed inside the chamber (100), and the acceptor material (300) and the target material (200) being spaced apart; A sputtering source (400) is provided on a wall surface of the chamber (100), the sputtering source (400) is used to emit an ion beam toward the target material (200), the target material (200) can receive the ion beam so that sputtered atoms are generated on the surface of the target material (200), and a surface of the receptor material (300) close to the target material (200) can receive the sputtered atoms; A super-atom beam source (600) is provided on a wall surface of the chamber (100), and the super-atom beam source (600) is used to emit a super-atom beam toward the receptor material (300).
5. The coating system according to claim 1, characterized in that: The coating system further comprises an electrostatic field scanning device (700), which is arranged at the emission end of the superatomic beam and is used to change the irradiation path of the superatomic beam so that the superatomic beam reciprocates to scan a side of the receptor material (300) close to the target material (200).
6. The coating system according to claim 1, characterized in that: The coating system further comprises an electrostatic lens device (800), which is arranged at the emission end of the superatomic beam and is used to expand the superatomic beam so that the irradiation surface of the superatomic beam covers a side of the receptor material (300) close to the target material (200).
7. The coating system according to claim 1, characterized in that: The receptor material (300) is movably connected to the chamber (100) via a support arm, and the support arm can drive the receptor material (300) to rotate along a central axis, and the support arm can change the relative angle between the receptor material (300) and the target material (200).
8. The coating system according to claim 1, characterized in that: The coating system further comprises a heating device, which is respectively arranged inside and / or outside the chamber (100).
9. The coating system according to claim 1, characterized in that: The coating system further comprises a neutralizer (500), wherein the neutralizer (500) is used to neutralize the positive charges in the chamber (100).
10. The coating system according to claim 1, characterized in that: The distance between the center of the end face of the sputtering source (400) and the center of the target material (200) ranges from 10 cm to 70 cm, and the angle between the axis of the sputtering source and the normal of the target material ranges from 10° to 80°; the distance between the center of the end face of the super-atom beam source (600) and the center of the receptor material (300) ranges from 20 cm to 100 cm; the distance between the center of the target material (200) and the center of the receptor material (300) ranges from 20 cm to 100 cm, and the angle between the normal of the target material and the normal of the receptor material ranges from ±50°.