Shaped aperture assembly, electron beam splitting module and multi-electron beam lithography machine

Abstract

The application discloses a shaped diaphragm assembly, an electron beam splitting module and a multi-electron beam lithography machine. The shaped diaphragm assembly comprises a first cold plate with a first through hole; and a first diaphragm array plate capable of reciprocating along the extension direction of the first cold plate through a first moving mechanism, so that part of the first diaphragm array plate can be located at a position corresponding to the first through hole. The first diaphragm array plate is arranged along the extension direction of the first cold plate. Due to the action of the first moving mechanism, the first diaphragm array plate can change the corresponding position with the first through hole of the first cold plate, so that the electron beam can irradiate different positions of the first diaphragm array plate after passing through the first through hole, thereby avoiding the first diaphragm array plate from being heated and deformed due to the irradiation of the electron beam at the same position. Moreover, the heat on the first diaphragm array plate located at the corresponding position of the first cold plate except the first through hole can be quickly dissipated through the first cold plate, thereby avoiding the first diaphragm array plate from being deformed due to the irradiation of the electron beam.

Description

Technical Field

[0001] This invention relates to the field of lithography technology, specifically to a forming aperture assembly, an electron beam splitter module, and a multi-electron beam lithography machine. Background Technology

[0002] Electron beam lithography machines use high-energy electron beams to bombard photoresist to achieve patterned writing, playing an irreplaceable role in the fabrication of high-resolution, high-precision masks. However, as chip feature sizes continue to shrink, the efficiency of single-electron-beam lithography machines in mask fabrication is decreasing, severely limiting their large-scale application in industrial fields.

[0003] In recent years, multi-electron-beam lithography machines have adopted arrayed electron beams for exposure, significantly improving mask processing efficiency and throughput. However, as the core component for generating the arrayed electron beam, the aperture blocks most of the electrons emitted by the electron gun during operation. These high-energy electrons collide with the beam splitter module, triggering a significant thermal effect, causing deformation of the aperture under thermal stress. This deformation directly affects the beam shape accuracy formed on the mask after the electron beam passes through the aperture, resulting in a decrease in pattern quality and ultimately adversely impacting the overall performance of the multi-electron-beam lithography machine.

[0004] Therefore, developing a new and efficient heat dissipation technology to reduce the thermal effect of the aperture during operation is of great significance for improving its stability, accuracy and consistency. Summary of the Invention

[0005] To address at least one of the aforementioned problems, according to one aspect of the present invention, a shaped aperture assembly is provided.

[0006] The shaped aperture assembly includes a first cold plate having a first through hole; and a first aperture array plate that can reciprocate along the extension direction of the first cold plate by a first moving mechanism so that a portion of it can be located at a position corresponding to the first through hole, the first aperture array plate being disposed along the extension direction of the first cold plate.

[0007] Because the first aperture array plate can reciprocate relative to the cold plate along the extension direction of the first cold plate under the action of the first moving mechanism, thereby changing its corresponding position with the first through hole of the first cold plate, the electron beam can irradiate different positions of the first aperture array plate after passing through the first through hole under the action of the first moving mechanism, so as to avoid the first aperture array plate from heating up and deforming due to continuous irradiation of the electron beam at the same position; moreover, under the action of the first moving mechanism, the heat in the area of ​​the first aperture array plate that is not directly irradiated by the electron beam can be quickly dissipated with the help of the first cold plate, so as to avoid the first aperture array plate from thermal deformation due to heat accumulation.

[0008] In some embodiments, the first cold plate includes a refrigerant inlet and a refrigerant outlet disposed on at least one side of the first through hole along the extending direction of the first cold plate, and a first channel connecting the refrigerant inlet and the refrigerant outlet, and a first aperture array plate disposed on the side of the first cold plate opposite to the refrigerant inlet and the refrigerant outlet. Therefore, the heat dissipation efficiency of the first cold plate can be improved by introducing refrigerant into the first cold plate.

[0009] In some embodiments, a slit-through region is provided on the first aperture array plate, and the slits in the slit-through region are arranged along the extension direction of the first cold plate. This prevents changes in the shape of the electron beam spot transmitted through the slits during the movement of the first aperture array plate along the extension direction of the first cold plate. In some embodiments, the refrigerant inlet is located on the side of the refrigerant outlet near the first through-hole. This ensures high heat dissipation efficiency at the location of the first aperture array plate near the first through-hole, thereby quickly dissipating heat from this location and improving the overall heat dissipation efficiency of the first aperture array plate.

[0010] In some embodiments, two sets of first cold plates are provided, and the two sets of first cold plates are respectively arranged on both sides of the first aperture array plate along the electron beam irradiation direction. Therefore, by increasing the number of first cold plates, the heat dissipation efficiency of the shaped aperture assembly can be further improved.

[0011] In some embodiments, the first channel is formed by multiple sets of heat dissipation fins extending along the extension direction of the first cold plate and a first frame surrounding the outside of the heat dissipation fins. Thus, the heat dissipation effect of the first cold plate on the first aperture array plate can be improved through the heat dissipation fins.

[0012] In some embodiments, a conductive protective layer, a thermally conductive layer, and a main body layer are sequentially disposed on the first aperture array plate along the electron beam irradiation direction, with the conductive protective layer grounded. Since the electron beam first irradiates the conductive protective layer when irradiating the first aperture array plate, the conductive protective layer can protect the thermally conductive layer and the main body layer from damage by the high-energy electron beam. Furthermore, grounding the conductive protective layer allows for the timely discharge of accumulated charges on its surface, preventing interference from charges on the surface of the first aperture array plate with the electron beam. Simultaneously, the thermally conductive layer between the conductive protective layer and the main body layer enables rapid heat transfer within the first aperture array plate, allowing it to maintain good temperature uniformity.

[0013] In some embodiments, the thermally conductive layer is a diamond film, and the main body layer is made of silicon. Because the diamond film has excellent thermal conductivity, it enables rapid heat transfer within the first aperture array plate, allowing the first aperture array plate to maintain good temperature uniformity. The use of silicon for the main body layer ensures the stability of the slits processed on it.

[0014] In some embodiments, the distance between the first cold plate and the slit transmission area along the electron beam irradiation direction ranges from 1 mm to 5 mm. Controlling the distance between the first cold plate and the slit transmission area in the electron beam irradiation direction can, on the one hand, ensure the effectiveness of the first cold plate in absorbing the heat radiated by the first aperture array plate; on the other hand, when the first moving mechanism drives the first aperture array plate to reciprocate relative to the first cold plate along the extension direction of the first cold plate, it can prevent friction or collision between the first cold plate and the slit transmission area, thereby affecting the normal use of the first aperture array plate.

[0015] In some embodiments, a radiation-absorbing coating is provided on the surface of the first cold plate facing the first aperture array plate, and the radiation absorption rate of the coating is controlled to be above 90%. This ensures the effectiveness of the first cold plate in absorbing the radiant heat from the first aperture array plate.

[0016] According to another aspect of the present invention, an electron beam splitting module is provided. The electron beam splitting module includes the aforementioned shaped aperture assembly. Because the first aperture array plate, under the action of the first moving mechanism, can reciprocate relative to the cold plate along the extending direction of the first cold plate to change its corresponding position with the first through-hole of the first cold plate, under the action of the first moving mechanism, when the electron beam passes through the first through-hole, it can irradiate different positions of the first aperture array plate, thereby preventing the first aperture array plate from heating and deforming due to continuous irradiation by the electron beam at the same position; moreover, under the action of the first moving mechanism, the heat in the area of ​​the first aperture array plate not directly irradiated by the electron beam can be quickly dissipated by the first cold plate, thereby preventing the first aperture array plate from undergoing thermal deformation due to heat accumulation.

[0017] In some embodiments, two sets of forming aperture assemblies are provided along the electron beam irradiation direction, and the extension directions of the first cold plates of one set of forming aperture assemblies and the other set of forming aperture assemblies are perpendicular to each other, and the extension directions of the first cold plates of both sets of forming aperture assemblies are perpendicular to the electron beam irradiation direction. Thus, by using two sets of forming aperture assemblies with mutually perpendicular extension directions along the electron beam irradiation direction, the electron beam passing through the electron beam splitting module can be made cylindrical, and the cross-section of the electron beam is rectangular or square. This invention forms an electron beam array using two forming aperture array plates, which can reduce the area of ​​each aperture array plate blocking the electron beam, thereby distributing the electron beam heat that would be borne by a single aperture array plate (with array electron beam through-holes directly provided on the aperture array plate) to the two forming aperture array plates. This further reduces the amount of heat generated by the forming aperture array plate due to electron beam irradiation, thereby solving problems such as morphological distortion, thermal deformation, and blanking delay that occur after the electron beam passes through the electron beam splitting module, thus improving photolithography accuracy.

[0018] According to another aspect of the present invention, a multi-electron-beam lithography machine is provided. The multi-electron-beam lithography machine includes the aforementioned forming aperture assembly; or includes the aforementioned electron beam splitting module. Because the first aperture array plate, under the action of the first moving mechanism, can reciprocate relative to the cold plate along the extending direction of the first cold plate to change its corresponding position with the first through-hole of the first cold plate, under the action of the first moving mechanism, when the electron beam passes through the first through-hole, it can irradiate different positions of the first aperture array plate, thereby preventing the first aperture array plate from heating and deforming due to continuous irradiation by the electron beam at the same position; moreover, under the action of the first moving mechanism, the heat in the area of ​​the first aperture array plate not directly irradiated by the electron beam can be quickly dissipated by the first cold plate, thereby preventing the first aperture array plate from deforming due to electron beam irradiation.

[0019] In some embodiments, the multi-electron beam lithography machine further includes a blanking array plate disposed in the electron beam emission direction of the forming aperture assembly. Thus, the electron beam passing through the forming aperture assembly can be controlled by the blanking array plate to determine whether it can pass through, thereby achieving control over the electron beam's on / off state.

[0020] In some embodiments, the blanking array includes a substrate layer and an integrated circuit layer sequentially disposed along the electron beam irradiation direction; a second via is disposed at a corresponding position of the substrate layer and the integrated circuit layer; a deflection electrode and a ground electrode are disposed in the second via. Thus, by applying a voltage to the deflection electrode, the formation of an electric field between the deflection electrode and the ground electrode can be controlled, thereby controlling whether the electron beam passing between the deflection electrode and the ground electrode is deflected. When a voltage is applied to the deflection electrode, the deflected electron beam strikes the ground electrode and is blocked, and the deflection electrode and the ground electrode close the area between them; when no voltage is applied to the deflection electrode, the electron beam passing between the deflection electrode and the ground electrode will not be deflected, and the area between the deflection electrode and the ground electrode is in an open state.

[0021] In some embodiments, the grounding electrode is longer than the deflection electrode, and the grounding electrode extends outside the second through-hole in the electron beam emission direction. This ensures that the entire deflected electron beam impacts the grounding electrode, preventing electron beam leakage from the through-hole and interference with other components. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a shaped aperture assembly according to an embodiment of the present invention;

[0023] Figure 2 for Figure 1 A schematic diagram of the disassembled structure of the shaped aperture assembly shown.

[0024] Figure 3 for Figure 1A schematic diagram of the disassembled state of the first cold plate of the formed aperture assembly shown.

[0025] Figure 4 for Figure 3 A magnified schematic diagram of the shaped aperture assembly at point A;

[0026] Figure 5 This is a schematic diagram of the structure of an aperture array plate according to an embodiment of this application;

[0027] Figure 6 for Figure 5 A magnified schematic diagram of the aperture array plate at point B;

[0028] Figure 7 for Figure 5 A schematic diagram of the cross-sectional structure of the aperture array plate along the CC direction.

[0029] Figure 8 for Figure 7 A magnified schematic diagram of the aperture array plate at point D;

[0030] Figure 9 for Figure 1 A schematic diagram of the cross-sectional structure of the shaped aperture assembly shown.

[0031] Figure 10 for Figure 1 The diagram shows a structural schematic of a forming aperture assembly used in a multi-electron-beam lithography machine.

[0032] Figure 11 This is a schematic diagram of the structure of a shaped aperture assembly according to another embodiment of this application;

[0033] Figure 12 for Figure 11 A schematic diagram of the cross-sectional structure of the shaped aperture array assembly shown.

[0034] Figure 13 This is a schematic diagram of the structure of an electron beam splitting module according to one embodiment of this application;

[0035] Figure 14 This is a schematic diagram illustrating the heating and heat dissipation principle of an electron beam splitting module according to one embodiment of this application.

[0036] Figure 15 This is a schematic diagram showing the morphological transformation of an electron beam after passing through an electron beam splitting module according to an embodiment of this application.

[0037] Figure 16 This is a schematic diagram of the structure of a multi-electron beam lithography machine according to one embodiment of this application;

[0038] Figure 17 for Figure 16The diagram shows the layout structure of the electron beam splitting module and the blanking array plate in a multi-electron beam lithography machine.

[0039] Figure 18 This is a schematic diagram of the structure of a blanking array board according to an embodiment of this application;

[0040] Reference numerals: 20, First cold plate; 201, First through hole; 2011, First sub-through hole; 2012, Second sub-through hole; 21, Cover plate; 211, Refrigerant inlet; 212, Refrigerant outlet; 22, Heat exchange plate; 221, First channel; 2211, Inlet chamber; 2212, Outlet chamber; 2213, Fin-to-fin channel; 2214, First frame; 222, Heat dissipation fins; 30, First moving mechanism; 31, Guide rail; 311, Slide groove; 40, First aperture array plate; 41, Conductive protective layer; 42, Thermally conductive layer; 43, Main body layer ; 401, Slit Transmission Area; 4011, Slit; 402, Support Area; 403, Second Frame; 50, Blanking Array Plate; 501, Second Through Hole; 51, Substrate Layer; 52, Integrated Circuit Layer; 53, Deflection Electron; 54, Ground Electron; 61, Electron Beam; 62, Exposure Heating Area; 63, Radiation Cooling Area; 64, Electron Beam Array I; 65, Electron Beam Array II; 71, Electron Gun; 72, Collimating Lens; 73, Reducing Lens; 74, Deflector; 75, Projection Lens; 76, Target Material; 77, Workpiece Stage; 78, Vacuum Chamber. Detailed Implementation

[0041] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other.

[0042] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising" or "including" include not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The terminology used herein is generally that commonly used by those skilled in the art; in case of any discrepancy with commonly used terminology, the terminology used herein shall prevail.

[0043] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” may be used herein to describe the relationship between one element or component and another (or other) element or component as shown in the figure. In addition to the orientation shown in the figure, spatial relative terms are intended to include different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly.

[0044] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] Figures 1 to 10 A shaped aperture assembly according to a first embodiment of the present invention is schematically shown.

[0046] like Figure 1 As shown, the formed aperture assembly includes a first cold plate 20, a first moving mechanism 30, and a first aperture array plate 40; a first through hole 201 is integrally formed or machined on the first cold plate 20; the first aperture array plate 40 is arranged along the extending direction X of the first cold plate 20; the first moving mechanism 30 is configured to drive the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extending direction of the first cold plate 20, so that at least a portion of the first aperture array plate 40 can be located at a position corresponding to the first through hole 201.

[0047] As one embodiment of the first moving mechanism 30, such as Figure 2 As shown, the first moving mechanism 30 includes a guide rail 31 with a sliding groove 311. The sliding groove 311 is arranged along the direction X extending from the first cold plate 20, and the first aperture array plate 40 is adapted to the sliding groove 311. In some preferred embodiments, reference continues to the present. Figure 2 As shown, the first moving mechanism 30 is provided in two sets, and the two sets are respectively provided on both sides of the first aperture array plate 40, so as to improve the stability of the first moving mechanism 30 driving the first aperture array plate 40 to move relative to the first cold plate 20 along the extension direction of the first cold plate 20.

[0048] Because the first aperture array plate 40 can reciprocate relative to the cold plate along the extension direction of the first cold plate 20 under the action of the first moving mechanism 30, thereby changing its corresponding position with the first through hole 201 of the first cold plate 20, the electron beam 61 can irradiate different positions of the first aperture array plate 40 after passing through the first through hole 201 under the action of the first moving mechanism 30, so as to avoid the first aperture array plate 40 from heating and deforming due to continuous irradiation of the electron beam 61 at the same position; moreover, under the action of the first moving mechanism 30, the heat in the area of ​​the first aperture array plate 40 that is not directly irradiated by the electron beam can be quickly dissipated with the help of the first cold plate 20, so as to avoid the first aperture array plate 40 from deforming due to heat accumulation.

[0049] As one embodiment of the first aperture array plate 40, such as Figure 2 , Figure 5 and Figure 6 As shown, the first aperture array plate 40 includes a slit transmission region 401 with multiple arrayed slits 4011. The slits 4011 in the slit transmission region 401 are arranged along the extending direction of the first cold plate 20 to prevent the shape of the electron beam spot transmitted through the slits 4011 from changing during the movement of the first aperture array plate 40 along the extending direction of the first cold plate 20. A support region 402 is connected to the outer periphery of the slit transmission region 401. Figure 2 As shown, a second frame 403 that can be adapted to the slide groove 311 is connected to the outer periphery of the support area 402. In some embodiments, such as Figure 7 and Figure 8As shown, the first aperture array plate 40 is sequentially provided with a conductive protective layer 41, a thermally conductive layer 42, and a main body layer 43 along the irradiation direction of the electron beam 61, with the conductive protective layer 41 grounded. Since the electron beam 61 first irradiates the conductive protective layer 41 when irradiating the first aperture array plate 40, the conductive protective layer 41 can protect the thermally conductive layer 42 and the main body layer 43 from damage by the high-energy electron beam 61. Furthermore, grounding the conductive protective layer 41 allows for the timely discharge of accumulated charges on its surface, preventing interference from charges on the surface of the first aperture array plate 40 with the electron beam 61. Simultaneously, the thermally conductive layer 42, located between the conductive protective layer 41 and the main body layer 43, enables rapid heat transfer within the first aperture array plate 40, maintaining good temperature uniformity. In some embodiments, the conductive protective layer 41 is a low-resistance metal thin film, such as a metal thin film made of gold, silver, or copper. In some embodiments, the thermally conductive layer 42 is a diamond thin film, and the main body layer 43 is made of silicon. The slit 4011 is formed by micro-nano processes such as MEMS (Microfabrication Process) on the main body layer 43. The conductive protective layer 41 and the thermally conductive layer 42 can be prepared on the surface of the main body layer 43 by vapor deposition. Due to the excellent thermal conductivity of the diamond film, rapid heat transfer can be achieved inside the first aperture array plate 40, enabling the first aperture array plate 40 to maintain good temperature uniformity. The main body layer 43 is made of silicon, which ensures the stability of the slit 4011 processed on the main body layer 43. In some embodiments, the width W of the slit 4011 ranges from 4μm to 6μm, and the spacing between adjacent slits 4011 ranges from 20μm to 40μm, so as to ensure the strength of the slit transmission region 401 structure while ensuring the number of slits 4011. In some embodiments, the second frame 403 is made of non-magnetic metal or hard material, such as brass or aluminum alloy. In some embodiments, the thickness of the support region 402 ranges from 0.8 mm to 1.5 mm, which is greater than the thickness of the slit transmission region 401, which ranges from 200 μm to 600 μm.

[0050] As one embodiment of the first cold plate 20, such as Figure 3As shown, the first cold plate 20 includes a refrigerant inlet 211 and a refrigerant outlet 212 disposed along the extending direction of the first cold plate 20 on at least one side of the first through hole 201, and a first channel 221 connecting the refrigerant inlet 211 and the refrigerant outlet 212. The first aperture array plate 40 is disposed on the side of the first cold plate 20 opposite to the refrigerant inlet 211 and the refrigerant outlet 212, so as to improve the heat dissipation efficiency of the first cold plate 20 by introducing refrigerant into the first cold plate 20. Preferably, the refrigerant inlet 211 is disposed on the side of the refrigerant outlet 212 close to the first through hole 201, so as to ensure that the heat dissipation efficiency of the first aperture array plate 40 near the first through hole 201 is relatively high, thereby helping to dissipate the heat of the first aperture array plate 40 near the first through hole 201 more quickly, thereby improving the overall heat dissipation efficiency of the first aperture array plate 40. Preferably, a radiation-absorbing coating is provided on the surface of the first cold plate 20 facing the first aperture array plate 40, and the radiation absorption rate of the radiation-absorbing coating is controlled to be above 90% to ensure the effectiveness of the first cold plate 20 in absorbing the radiant heat of the first aperture array plate 40. In some embodiments, the radiation-absorbing coating is obtained by blackening the surface of the first cold plate 20 facing the first aperture array plate 40 or by coating with a high-absorption-rate coating. Preferably, a set of refrigerant inlets 211 and refrigerant outlets 212 are provided on both sides of the first through hole 201 along the extending direction of the first cold plate 20 to improve heat dissipation efficiency.

[0051] In some embodiments, continue to refer to Figure 3 As shown, the first cold plate 20 includes a cover plate 21 and a heat exchange plate 22; the cover plate 21 covers one side of the surface of the heat exchange plate 22; the refrigerant inlet 211 and the refrigerant outlet 212 are integrally formed, machined, or connected to the surface of the cover plate 21 facing away from the heat exchange plate 22; the cover plate 21 and the heat exchange plate 22 have corresponding positions integrally formed or machined with a first sub-through hole 2011 and a second sub-through hole 2012, respectively. When the cover plate 21 covers the heat exchange plate 22, the first sub-through hole 2011 and the second sub-through hole 2012 together constitute the first through hole 201; the heat exchange plate 22 has an inlet chamber 2211 corresponding to and communicating with the refrigerant inlet 211, and an outlet chamber 2212 corresponding to and communicating with the refrigerant outlet 212; the refrigerant can be water, fluorinated liquid, or liquid metal; the refrigerant achieves single-phase convective heat transfer or two-phase flow boiling heat transfer within the heat exchange plate 22. Figure 3 and Figure 4As shown, the heat exchange plate 22 is also connected to an array of heat dissipation fins 222. Interfin channels 2213 are formed between adjacent heat dissipation fins 222. A first frame 2214 is provided on the outer periphery of the heat dissipation fins 222, forming an inlet chamber 2211 and an outlet chamber 2212 between the two ends of the heat dissipation fins 222 and the first frame 2214. The interfin channels 2213 communicate with the inlet chamber 2211 and the outlet chamber 2212 to form a first channel 221. Preferably, multiple sets of heat dissipation fins 222 are arranged in an array along a direction perpendicular to the extension direction X of the first cold plate 20, and the interfin channels 2213 formed between adjacent heat dissipation fins 222 are arranged along the extension direction X of the first cold plate 20. Thus, the heat dissipation effect of the first cold plate 20 on the first aperture array plate 40 can be improved through the heat dissipation fins 222. In some embodiments, the heat dissipation fins 222 and the interfin channels 2213 occupy more than 70% of the area of ​​the heat exchange plate 22 to ensure heat exchange effect.

[0052] In other embodiments, the first cold plate 20 may also be a cold plate commonly used in the prior art.

[0053] In some embodiments, such as Figure 9 As shown, the distance d1 between the first cold plate 20 and the slit transmission area 401 along the electron beam 61 irradiation direction ranges from 1 mm to 5 mm. Controlling the distance between the first cold plate 20 and the slit transmission area 401 in the electron beam 61 irradiation direction ensures, on the one hand, the effectiveness of the first cold plate 20 in absorbing the heat radiated by the first aperture array plate 40; on the other hand, when the first moving mechanism 30 drives the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20, it can prevent the first cold plate 20 from rubbing or colliding with the slit transmission area 401, thereby hindering the movement of the first aperture array plate 40 or causing damage to it.

[0054] As another embodiment of the first moving mechanism 30, the first moving mechanism 30 includes a gear rotatably disposed on the first aperture array plate 40 and a rack adapted to the gear, the rack being disposed along the extending direction of the first cold plate 20.

[0055] When the forming aperture assembly of this application is used in a multi-electron beam lithography machine, such as Figure 10As shown, the shaping aperture assembly can be positioned on the side of the collimating lens 72 facing away from the electron gun 71. Two sets of shaping aperture assemblies can be arranged along the emission direction of the electron beam 61 emitted by the electron gun 71. The collimating lens 72 in the vacuum chamber 78 shapes and amplifies the divergent electron beam 61 emitted by the electron gun 71 to form a parallel electron beam 61. This parallel electron beam 61 passes through the slits 4011 of the first aperture array plate 40 of the two sets of shaping aperture assemblies to form a columnar electron beam 61 before entering the blanking array plate 50. The blanking array plate 50 includes through holes corresponding one-to-one with the columnar electron beam 61 and beam gate units disposed in the through holes. Each beam gate... The unit is used to independently control the on / off state of the corresponding electron beam 61; the deflected electron beam 61 is blocked by the ground electrode 54 in the beam gate unit and cannot enter the subsequent components; while the undeflected electron beam 61 can enter the shrinking lens 73 through the aperture on the blanking array plate 50 for shrinking and focusing; the electron beam 61 array through the blanking array plate 50 enters the projection lens 75 and deflector 74; the projection lens 75 shapes the electron beam 61 array into a parallel beam; under the action of the deflector 74, the electron beam 61 array achieves two-dimensional scanning on the surface of the target material 76; in order to meet the photolithography requirements of large-area samples, the sample is placed on the multi-degree-of-freedom precision workpiece stage 77.

[0056] Figure 11 and Figure 12 A shaped aperture assembly according to a second embodiment of the present invention is schematically shown.

[0057] like Figure 11 and Figure 12 As shown, the shaped aperture assembly of this embodiment is an improvement on the shaped aperture assembly of the first embodiment. The shaped aperture assembly includes two sets of first cold plates 20. The two sets of first cold plates 20 are respectively arranged on both sides of the first aperture array plate 40 along the electron beam 61 irradiation direction, so as to further improve the heat dissipation efficiency of the shaped aperture assembly by increasing the number of first cold plates 20.

[0058] In some embodiments, such as Figure 12 As shown, compared with the shaped aperture assembly of the first embodiment, the distance d2 between the first cold plate 20 and the slit transmission area 401 in the electron beam 61 irradiation direction of the newly added shaped aperture assembly is also 1mm~5mm. This is to ensure that the first cold plate 20 absorbs the heat radiated by the first aperture array plate 40, while avoiding friction or collision between the first cold plate 20 and the slit transmission area 401 when the first moving mechanism 30 drives the first aperture array plate 40 to reciprocate relative to the first cold plate 20 along the extension direction of the first cold plate 20, thereby hindering the movement of the first aperture array plate 40 or causing damage to it.

[0059] Figures 13 to 15An electron beam splitter module according to a first embodiment of the present invention is schematically shown.

[0060] like Figure 13 As shown, the electron beam splitting module includes the aforementioned forming aperture assembly. Because the first aperture array plate 40, under the action of the first moving mechanism 30, can reciprocate relative to the cold plate 20 along its extension direction, thereby changing its corresponding position with the first through-hole 201 of the first cold plate 20, under the action of the first moving mechanism 30, when the electron beam 61 passes through the first through-hole 201, it can irradiate different positions of the first aperture array plate 40, thus preventing the first aperture array plate 40 from heating and deforming due to continuous irradiation by the electron beam 61 at the same position. Furthermore, under the action of the first moving mechanism 30, the heat in the area of ​​the first aperture array plate 40 not directly irradiated by the electron beam can be quickly dissipated by the first cold plate 20, thus preventing the first aperture array plate 40 from deforming due to heat accumulation.

[0061] In some embodiments, continue to refer to Figure 13 As shown, two sets of forming aperture assemblies are provided along the irradiation direction of the electron beam 61. The extension directions of the first cold plate 20 of one set of forming aperture assemblies and the other set of forming aperture assemblies are perpendicular to each other, and the extension directions of the first cold plate 20 of both sets of forming aperture assemblies are perpendicular to the irradiation direction of the electron beam 61. The projections of the first through holes 201 of the two sets of forming aperture assemblies in the irradiation direction of the electron beam 61 overlap. Thus, the electron beam 61 passing through the electron beam splitting module can be columnar by using two sets of forming aperture assemblies with mutually perpendicular extension directions arranged along the irradiation direction of the electron beam 61; moreover, when the slit 4011 of the slit transmission area 401 provided on the first aperture array plate 40 in the forming aperture assembly is arranged along the extension direction of the first cold plate 20, as Figure 15 As shown, after passing through the first set of forming aperture components, electron beam 61 first forms an array of electron beams I64 with a plate-like structure. After passing through the second set of forming aperture components, electron beam 61 forms an array of electron beams II65 with a columnar structure. When electron beam 61 irradiates the first and second sets of forming aperture components, an exposure heating zone 62 is formed at the irradiation position, and a radiation cooling zone 63 is formed in other areas (e.g., ...). Figure 14As shown), when the forming aperture assembly is moved relative to the first cold plate 20, the position cooled by the radiation cooling zone 63 can be moved to the position irradiated by the electron beam 61, and the exposure heating zone 62 can be moved to the radiation cooling zone 63. This allows the positions on the forming aperture assembly to be alternately irradiated by the electron beam 61, preventing the forming aperture assembly from overheating and deforming due to prolonged irradiation by the electron beam 61 at the same position. Moreover, by forming an electron beam array using two forming aperture array plates 40, the present invention can reduce the area of ​​each aperture array plate blocking the electron beam 61, thereby reducing the traditional single aperture array plate (where an array electron beam through-hole is directly set on the aperture array plate, similar to...) Figure 18 The heat from the electron beam (as shown in the structure) is distributed across the two aperture array plates, thereby further reducing the amount of heat generated by the first aperture array plate 40 due to electron beam 61 irradiation. This solves problems such as morphological distortion, thermal deformation, and blanking delay that occur after the electron beam 61 passes through the electron beam splitter module, thus improving photolithography accuracy. The two sets of forming aperture assemblies arranged along the irradiation direction of the electron beam 61 are perpendicular to each other so that the electron beam 61 is converted into a square beam spot after passing through the electron beam splitter module.

[0062] Figures 16 to 18 The image shows schematically the beam system and aperture assembly of a multi-electron beam 61 lithography machine according to a first embodiment of the present invention.

[0063] like Figure 16 and Figure 17 As shown, the multi-electron-beam lithography machine includes the aforementioned forming aperture assembly; or it includes the aforementioned electron beam splitting module. Because the first aperture array plate 40, under the action of the first moving mechanism 30, can reciprocate relative to the cold plate 20 along its extension direction, thereby changing its corresponding position with the first through-hole 201 of the first cold plate 20, under the action of the first moving mechanism 30, when the electron beam 61 passes through the first through-hole 201, it can irradiate different positions of the first aperture array plate 40, thus preventing the first aperture array plate 40 from heating and deforming due to continuous irradiation by the electron beam 61 at the same position. Furthermore, under the action of the first moving mechanism 30, the heat in the area of ​​the first aperture array plate 40 not directly irradiated by the electron beam can be quickly dissipated by the first cold plate 20, thus preventing thermal deformation of the first aperture array plate 40 due to electron beam 61 irradiation.

[0064] In some embodiments, such as Figure 16 and Figure 17 As shown, the multi-electron-beam lithography system also includes a blanking array 50 disposed in the electron beam 61 emission direction of the forming aperture assembly. Thus, the electron beam 61 passing through the forming aperture assembly can be controlled by the blanking array 50 to determine whether it can enter subsequent components, thereby achieving control over the on / off state of the electron beam 61.

[0065] In some embodiments, such as Figure 18 As shown, the blanking array 50 includes a substrate layer 51 and an integrated circuit layer 52 arranged sequentially along the irradiation direction of the electron beam 61; a second via 501 is provided at corresponding positions of the substrate layer 51 and the integrated circuit layer 52; a deflection electrode 53 and a ground electrode 54 are provided in the second via 501. Therefore, by applying a voltage to the deflection electrode 53, the formation of an electric field between the deflection electrode 53 and the ground electrode 54 can be controlled, thereby controlling whether the electron beam 61 passing between the deflection electrode 53 and the ground electrode 54 is deflected. When a voltage is applied to the deflection electrode 53, the deflected electron beam 61 strikes the ground electrode 54 and is blocked, and the area between the deflection electrode 53 and the ground electrode 54 is closed; when no voltage is applied to the deflection electrode 53, the electron beam 61 passing between the deflection electrode 53 and the ground electrode 54 will not be deflected, and the area between the deflection electrode 53 and the ground electrode 54 is in an open state. Preferably, the grounding electrode 54 is longer than the deflection electrode 53, and the grounding electrode 54 extends to the outside of the second through hole 501 in the emission direction of the electron beam 61. This arrangement can ensure that the entire deflected electron beam impacts the grounding electrode, preventing the electron beam from overflowing from the through hole and interfering with other components.

[0066] In some implementations, the deflection electrode 53 and the ground electrode 54 constitute a clamping unit in one embodiment of this application. The aperture spacing of the clamping unit, that is, the distance N between the deflection electrode 53 and the ground electrode 54, is in the range of 6μm to 8μm, and the distance N between the deflection electrode 53 and the ground electrode 54 is controlled to be slightly larger than the width W of the slit 4011.

[0067] In this application, the electron gun 71, collimating lens 72, shaping aperture assembly, blanking array plate 50, reducing lens 73, deflector 74, projection lens 75, target material 76 (chip / mask), and worktable are all located in a vacuum chamber 78; the vacuum chamber 78 provides a vacuum working environment and electromagnetic shielding for the aforementioned components; the electron gun 71 is used to emit an electron beam 61; the collimating lens 72 shapes and amplifies the divergent electron beam 61 emitted by the electron gun 71 to form a parallel electron beam 61; the parallel electron beam 61 passes through two shaping aperture assemblies to form a columnar electron beam 61 and then enters the blanking array plate 50; the blanking array plate 50 includes through holes corresponding one-to-one with the columnar electron beam 61 and is equipped with... A beam gate unit is placed in the through hole; each beam gate unit is used to independently control the on / off state of the corresponding electron beam 61; the deflected electron beam 61 is blocked by the ground electrode 54 in the beam gate unit and cannot enter the subsequent components; while the undeflected electron beam 61 can enter the shrinking lens 73 through the aperture on the blanking array plate 50 for shrinking and focusing; the electron beam 61 array passing through the blanking array plate 50 enters the projection lens 75 and deflector 74; the projection lens 75 shapes the electron beam 61 array into a parallel beam; under the action of the deflector 74, the electron beam 61 array achieves two-dimensional scanning on the surface of the target material 76; in order to meet the photolithography requirements of large-area samples, the sample is placed on a multi-degree-of-freedom precision workpiece stage 77.

[0068] In this invention, the connection or installation is a fixed connection unless otherwise specified. A fixed connection can be implemented as a detachable or non-detachable connection commonly used in the prior art. A detachable connection can be implemented using existing technologies, such as threaded connections or keyed connections. A non-detachable connection can also be implemented using existing technologies, such as welding or adhesive bonding.

[0069] The above descriptions are merely some embodiments of the present invention. Those skilled in the art can make various modifications and improvements without departing from the inventive concept of the present invention, and these all fall within the scope of protection of the present invention.

Claims

1. A shaped aperture assembly, characterized in that, include: A first cold plate (20) having a first through hole (201); The first aperture array plate (40) is arranged along the extension direction of the first cold plate (20). Under the action of the first moving mechanism (30), it can reciprocate relative to the first cold plate (20) along the extension direction of the first cold plate (20) to change its corresponding position with the first through hole (201) of the first cold plate (20), so that part of the first aperture array plate (40) can be located at the position corresponding to the first through hole (201). Under the action of the first moving mechanism (30), when the electron beam (61) passes through the first through hole (201), it can irradiate different positions of the first aperture array plate (40) to avoid the first aperture array plate (40) from thermal deformation due to continuous irradiation by the electron beam (61) at the same position. Under the action of the first moving mechanism (30), the heat in the area of ​​the first aperture array plate (40) that is not directly irradiated by the electron beam (61) can be quickly dissipated by the first cold plate (20) to avoid the first aperture array plate (40) from deformation due to heat accumulation. A slit transmission area (401) is provided on the first aperture array plate (40). The slit transmission area (401) has multiple arrays of slits (4011). The slits (4011) in the slit transmission area (401) are arranged along the extension direction of the first cold plate (20) to avoid the shape of the electron beam spot transmitted through the slits (4011) changing during the movement of the first aperture array plate (40) along the extension direction of the first cold plate (20) under the action of the first moving mechanism (30).

2. The shaped aperture assembly according to claim 1, characterized in that, The first cold plate (20) includes a refrigerant inlet (211) and a refrigerant outlet (212) disposed on at least one side of the first through hole (201) along the extending direction of the first cold plate (20), and a first channel (221) connecting the refrigerant inlet (211) and the refrigerant outlet (212). The first aperture array plate (40) is disposed on the side of the first cold plate (20) opposite to the refrigerant inlet (211) and the refrigerant outlet (212).

3. The shaped aperture assembly according to claim 2, characterized in that, The refrigerant inlet (211) is located on one side of the refrigerant outlet (212) near the first through hole (201); and / or The first cold plate (20) is provided in two sets, and the two sets of first cold plates (20) are respectively arranged on both sides of the first aperture array plate (40) along the electron beam (61) irradiation direction.

4. The shaped aperture assembly according to claim 3, characterized in that, The first channel (221) is formed by multiple sets of heat dissipation fins (222) extending along the extension direction of the first cold plate (20) and a first frame (2214) surrounding the outside of the heat dissipation fins (222); and / or The first aperture array plate (40) is provided with a conductive protective layer (41), a heat-conducting layer (42) and a main body layer (43) in sequence along the irradiation direction of the electron beam (61), and the conductive protective layer (41) is grounded.

5. The shaped aperture assembly according to any one of claims 2 to 4, characterized in that, The distance between the first cold plate (20) and the slit transmission area (401) along the electron beam (61) irradiation direction ranges from 1 mm to 5 mm; and / or The surface of the first cold plate (20) facing the first aperture array plate (40) is provided with a radiation absorption coating, and the radiation absorption rate of the radiation absorption coating is controlled to be above 90%.

6. An electron beam splitting module, characterized in that, Includes the shaped aperture assembly as described in any one of claims 1 to 5.

7. The electron beam splitter module according to claim 6, characterized in that, The forming aperture assembly is provided in two sets along the electron beam (61) irradiation direction. The extension directions of the first cold plate (20) of one forming aperture assembly and the other forming aperture assembly are perpendicular to each other, and the extension directions of the first cold plate (20) of both forming aperture assemblies are perpendicular to the electron beam (61) irradiation direction.

8. A multi-electron beam lithography machine, characterized in that, Includes the shaped aperture assembly as described in any one of claims 1 to 5; or Includes the electron beam splitter module as described in claim 6 or 7.

9. The multi-electron beam lithography machine according to claim 8, characterized in that, It also includes a blanking array plate (50) disposed in the electron beam (61) emission direction of the shaped aperture assembly.

10. The multi-electron beam lithography machine according to claim 9, characterized in that, The blanking array plate (50) includes a substrate layer (51) and an integrated circuit layer (52) arranged sequentially along the irradiation direction of the electron beam (61); The second via (501) is provided at the corresponding positions of the base layer (51) and the integrated circuit layer (52); A deflection electrode (53) and a grounding electrode (54) are provided in the second through hole (501).

11. The multi-electron beam lithography machine according to claim 10, characterized in that, The grounding electrode (54) is longer than the deflection electrode (53), and the grounding electrode (54) extends to the outside of the second through hole (501) in the emission direction of the electron beam (61).

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