A fast-responding solid state circuit breaker

Abstract

The application discloses a kind of fast response solid-state circuit breaker, including semiconductor two-terminal device, thyristor and two-terminal element;The electrode T of semiconductor two-terminal device is connected with the cathode K1 of thyristor, the electrode S of semiconductor two-terminal device is connected with the second end L of two-terminal element, the first end H of two-terminal element is connected with the gate G of thyristor, solid-state circuit breaker is two-terminal component, the anode A of thyristor is as the first electrode of solid-state circuit breaker, the electrode S of semiconductor two-terminal device is as the second electrode K of solid-state circuit breaker;Semiconductor two-terminal device is the semiconductor two-terminal device with current transient suppression function, two-terminal element is the component with shutdown function.The solid-state circuit breaker of the application is a two-terminal component, does not need additional drive control, and has the function of self-detecting abnormal overcurrent, and can be fast response, can be independently cut off abnormal current in μs level.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices and their components, and in particular to a fast-response solid-state circuit breaker made of semiconductor devices. Background Technology

[0002] A circuit breaker is a switching device used to protect circuits from overloads, short circuits, and ground faults. It is widely used in power systems, industry, construction, transportation, and new energy fields. With the growth of electricity demand, the development of smart grids, and increasing environmental protection requirements, the application scenarios of circuit breakers are constantly expanding, and the technological demands are becoming increasingly diversified. Solid-state circuit breakers (SSCBs) utilize semiconductor power device technology. Due to their advantages such as arc-free operation, fast response, high reliability, and ease of intelligent control, they have gradually become a replacement technology for traditional mechanical circuit breakers and have seen rapid development and application in power electronics, new energy, and smart grid fields in recent years.

[0003] Currently, mainstream solid-state circuit breakers are power devices made of wide-bandgap semiconductor materials such as SiC and GaN. They have advantages such as fast breaking speed (μs level), high withstand voltage, low loss, and high-temperature stability. However, their high manufacturing cost limits their large-scale commercialization. While traditional thyristors have the advantage of high power density, they are semi-controlled devices and cannot be directly turned off by a gate signal. They require the anode current to drop to 0 or reverse to turn off, thus they cannot actively interrupt current when a system fault occurs. Summary of the Invention

[0004] Technical objective: To address the deficiencies in existing technologies, this invention discloses a fast-response solid-state circuit breaker, which is a two-terminal component that does not require additional drive control and has the function of autonomously detecting abnormal overcurrent. It can also respond quickly and autonomously cut off abnormal current within the μs range.

[0005] Technical solution: To achieve the above technical objectives, the present invention adopts the following technical solution.

[0006] A fast-response solid-state circuit breaker includes: a semiconductor two-terminal device, a thyristor, and a two-terminal element; the electrode T of the semiconductor two-terminal device is connected to the cathode K1 of the thyristor, the electrode S of the semiconductor two-terminal device is connected to the second terminal L of the two-terminal element, the first terminal H of the two-terminal element is connected to the gate G of the thyristor, the solid-state circuit breaker is a two-terminal assembly, the anode A of the thyristor serves as the first electrode of the solid-state circuit breaker, and the electrode S of the semiconductor two-terminal device serves as the second electrode K of the solid-state circuit breaker;

[0007] Among them, the semiconductor two-terminal device is a semiconductor two-terminal device with current transient suppression function. Under different voltages between the two electrodes, the internal resistance switches between two different states of low resistance and high resistance. The two-terminal element is a component with turn-off function, which realizes the function of conduction or turn-off under different voltages at both ends.

[0008] Furthermore, when the system containing the solid-state circuit breaker is operating stably, the current flowing through the solid-state circuit breaker is much smaller than... I max When the two-terminal element W is in the off state, the semiconductor two-terminal device TBC is in the low resistance working state, and the current flows from the first electrode through the thyristor and the semiconductor two-terminal device TBC to the second electrode K, and the two-terminal element W is cut off.

[0009] When an abnormal overcurrent occurs in the system containing the solid-state circuit breaker, once the abnormal current exceeds... I max When the semiconductor two-terminal device TBC quickly enters a high-resistance operating state, the current path from electrode T to electrode S in the semiconductor two-terminal device TBC is cut off. V TS > V 0; At the same time, the two-terminal element meets the conduction condition, the current channel from electrode H to electrode L in the two-terminal element W is opened, the two-terminal element W is turned on, which promotes the rapid turn-off of the thyristor and realizes the function of cutting off the circuit.

[0010] When the system containing the solid-state circuit breaker returns to normal operation, the current flowing through the solid-state circuit breaker is much smaller than... I max At the same time, the solid-state circuit breaker will automatically return to its low-resistance operating state.

[0011] The maximum operating current flowing through the solid-state circuit breaker is defined as follows: I max , I max The voltage drop of the corresponding semiconductor two-terminal device TBC is V 0, the voltage across the two-terminal semiconductor device TBC is V TS .

[0012] Furthermore, the conduction conditions for a two-terminal element include: V HL > V At 0, the two-terminal element is turned on; the voltage across the two-terminal element is... V HL The voltage drop across the semiconductor two-terminal device corresponding to the maximum operating current flowing through the solid-state circuit breaker is: V 0.

[0013] Furthermore, when the two-terminal element is at least one PMOS transistor with its gate and drain shorted, its source is the first terminal H of the two-terminal element and its drain is the second terminal L of the two-terminal element; when the two-terminal element is two or more PMOS transistors with their gate and drain shorted, the PMOS transistors are connected in parallel, and the source of all PMOS transistors is shorted to serve as the first terminal H of the two-terminal element, and the drain of all PMOS transistors is shorted to serve as the second terminal L of the two-terminal element.

[0014] Furthermore, when the two-terminal element is at least one diode, its anode is used as the first terminal H of the two-terminal element, and its cathode is used as the second terminal L of the two-terminal element; when the two-terminal element is two or more diodes, the diodes are connected in series, the anode of the first diode is used as the first terminal H of the two-terminal element, among the middle diodes, the anode of the next diode is connected to the cathode of the previous diode, and the cathode of the last diode is used as the second terminal L of the two-terminal element.

[0015] Furthermore, the two-terminal element is a component consisting of at least one PMOS transistor with its gate and drain shorted and at least one diode connected in parallel. The source of the PMOS transistor is connected to the anode of the diode, and the connection point serves as the first terminal H of the two-terminal element. The drain of the PMOS transistor is connected to the cathode of the diode, and the connection point serves as the second terminal L of the two-terminal element. When there are two or more PMOS transistors with their gate and drain shorted, the PMOS transistors are connected in parallel. When there are two or more diodes, the diodes are connected in series.

[0016] Furthermore, when the two-terminal element is at least one NMOS transistor with its gate and drain shorted, its drain serves as the first terminal H and its source serves as the second terminal L; when the two-terminal element is two or more NMOS transistors with their gate and drain shorted, the NMOS transistors are connected in parallel, and the drains of all NMOS transistors are shorted to serve as the first terminal H of the two-terminal element, and the sources of all NMOS transistors are shorted to serve as the second terminal L of the two-terminal element.

[0017] Beneficial effects: The solid-state circuit breaker realized by this invention is a two-terminal component that does not require additional drive control and has the function of autonomously detecting abnormal overcurrent. It can respond quickly and autonomously cut off abnormal current within μs. It has the advantages of easy control, fast response, no electric arc, high withstand voltage, high reliability, and high cost performance. Attached Figure Description

[0018] Figure 1 This is a structural framework diagram of a fast-response solid-state circuit breaker according to the present invention;

[0019] Figure 2 This is a schematic diagram of a structure of the semiconductor two-terminal device TBC of the present invention;

[0020] Figure 3 This is a structural diagram of a fast-response solid-state circuit breaker according to Embodiment 1;

[0021] Figure 4 The current-voltage curve of a fast-response solid-state circuit breaker in Example 1 is shown.

[0022] Figure 5 This is a structural diagram of a fast-response solid-state circuit breaker according to Embodiment 2;

[0023] Figure 6 The structure of a fast-response solid-state circuit breaker as described in Example 3 Figure 1 ;

[0024] Figure 7 The structure of a fast-response solid-state circuit breaker as described in Example 3 Figure 2 ;

[0025] Figure 8 The structure of a fast-response solid-state circuit breaker as shown in Example 4 Figure 1 ;

[0026] Figure 9 The structure of a fast-response solid-state circuit breaker as shown in Example 4 Figure 2 ;

[0027] Figure 10 The structure of a fast-response solid-state circuit breaker as described in Example 5 Figure 1 ;

[0028] Figure 11 The structure of a fast-response solid-state circuit breaker as described in Example 5 Figure 2 ;

[0029] Figure 12 The structure of a fast-response solid-state circuit breaker as described in Example 6 Figure 1 ;

[0030] Figure 13 The structure of a fast-response solid-state circuit breaker as described in Example 6 Figure 2 . Detailed Implementation

[0031] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0032] like Figure 1As shown, a fast-response solid-state circuit breaker of the present invention includes: a semiconductor two-terminal device TBC, a thyristor, and a two-terminal element W; the electrode T of the semiconductor two-terminal device TBC is connected to the cathode K1 of the thyristor, the electrode S of the semiconductor two-terminal device TBC is connected to the second terminal L of the two-terminal element W, the first terminal H of the two-terminal element W is connected to the gate G of the thyristor, the solid-state circuit breaker is a two-terminal assembly, the anode A of the thyristor serves as the first electrode of the solid-state circuit breaker, and the electrode S of the semiconductor two-terminal device TBC serves as the second electrode K of the solid-state circuit breaker;

[0033] Among them, the semiconductor two-terminal device TBC is a semiconductor two-terminal device with current transient suppression function. Under different voltages between the two electrodes, the internal resistance switches between two different states of low resistance and high resistance. The two-terminal element W is a component with turn-off function. Under different voltages at both ends, it realizes the function of conduction or turn-off.

[0034] The maximum operating current flowing through a solid-state circuit breaker is defined as follows: I max , I max The voltage drop of the corresponding semiconductor two-terminal device TBC is V 0, the current flowing through the semiconductor two-terminal device TBC is I TS The voltage across the two-terminal semiconductor device TBC is V TS The voltage across the two-terminal element W is V HL The conduction conditions for a two-terminal element include: V HL > V When the value is 0, the two-terminal element is conducting; otherwise, the two-terminal element is disconnected.

[0035] When the system containing the solid-state circuit breaker is operating stably, the current flowing through the solid-state circuit breaker is much smaller than... I max When the two-terminal element W is in the off state, the semiconductor two-terminal device TBC is in the low resistance working state, and the current flows from the first electrode through the thyristor and the semiconductor two-terminal device TBC to the second electrode K, and the two-terminal element W is cut off.

[0036] When an abnormal overcurrent occurs in the system containing the solid-state circuit breaker, once the abnormal current exceeds... I max When the semiconductor two-terminal device TBC quickly enters a high-resistance operating state, the current path from electrode T to electrode S in the semiconductor two-terminal device TBC is cut off. V TS > V 0; at the same time, the two-terminal element satisfies the conduction condition, that is V HL >V 0. When the current path from electrode H to electrode L in the two-terminal element W is opened, the two-terminal element W is turned on, thus achieving the function of cutting off the circuit.

[0037] When the system containing the solid-state circuit breaker returns to normal operation, the current flowing through the solid-state circuit breaker is much smaller than... I max At that time, the solid-state circuit breaker will also automatically return to the low-resistance operating state.

[0038] The semiconductor two-terminal device TBC includes at least one cell structure, which includes a substrate region. A voltage withstand layer of a first conductivity type is disposed above the substrate region. A commutation region of the first conductivity type and at least one source region of a second conductivity type are disposed on the upper surface of the voltage withstand layer. At least one buried layer of the second conductivity type is disposed within the voltage withstand layer and is surrounded by the voltage withstand layer. An electrode T is disposed at the bottom of the substrate region and is in direct contact with the substrate region. An electrode S and a floating ohmic contact electrode are disposed on the upper surface of the voltage withstand layer. The electrode S is in direct contact with the source region, and the floating ohmic contact electrode forms ohmic contacts with the commutation region and the source region, respectively. The potential of the buried layer is equal to the potential of the electrode S. The conductivity type of the substrate region is either the first conductivity type or the second conductivity type. When the substrate region is of the first conductivity type, the doping concentration of the substrate region is not less than that of the voltage withstand layer.

[0039] The first conductivity type is either N-type or P-type, and the second conductivity type is either P-type or N-type.

[0040] like Figure 2 As shown, a specific structure of a semiconductor two-terminal device (TBC) includes a cell structure comprising: an N+ type semiconductor substrate region, on which an N-type withstand voltage layer is disposed, serving as the primary withstand voltage layer of the device. At least one N-type commutation region and at least one P-type source region are disposed on the upper surface of the N-type withstand voltage layer. At least one P-type buried layer is also disposed within the N-type withstand voltage layer, surrounded by the N-type withstand voltage layer. Electrodes T and S comprise or are made of metallic materials. Electrode T is in direct contact with the N+ type semiconductor substrate region, and electrode S is in direct contact with the P-type source region. Furthermore, there is at least one floating ohmic contact electrode (FOC electrode), which is in contact with at least a portion of the N-type commutation region and at least a portion of the P-type source region, forming ohmic contacts with each region. The potential of the P-type buried layer is equal to the potential of the second electrode S.

[0041] When the bias voltage between electrode T and electrode S increases from 0 and the value of the bias voltage is small, electrode T and electrode S exhibit low resistance characteristics. This is because... V TSWhen the value is small, most of the N-type breakdown layer is not depleted. At this time, the N+ substrate region, the neutral N-type breakdown layer, and the N-type commutation region are at the same potential, that is, the FOC electrode and electrode T are at the same potential. Therefore, the voltage between the FOC electrode and electrode S is equal to the bias voltage. An electric field will exist in the P-type source region pointing from the FOC region to electrode S. Obviously, at this time, majority carriers (holes) will start from the FOC electrode, pass through the P-type source region, and reach electrode S. Simultaneously, to ensure current continuity, majority carriers (electrons) will flow from the FOC electrode through the N-type commutation region, the N-type breakdown layer, and the N+ substrate region to electrode T, thus forming a continuous current between electrode T and electrode S. The equivalent resistance of the device is the resistance of the P-type source region, the N-type commutation region, the N-type breakdown layer, and the N+ substrate region connected in series. Obviously, when the bias voltage is small, the equivalent resistance of the device exhibits low resistance characteristics.

[0042] When the bias voltage between electrode T and electrode S V TS When the resistance is increased to a certain value, the resistance between electrodes T and S will abruptly change to a high-resistance characteristic. This is because: as... V TS As the N-type pressure-resistant layer increases, it will gradually deplete in the vicinity of the P-type buried layer and the P-type source body region. Simultaneously, corresponding depletion zones will also appear within the P-type buried layer and the P-type source body region, and the width of the depletion zone will increase with... V TS As the depletion region expands to the point where the P-type buried layer and the N-type breakdown layer near the P-type source region are completely depleted, the N-type commutation region, the N-type breakdown layer, and the N+ substrate region will no longer exhibit linear resistance characteristics, and the electronic current path within the N-type breakdown layer will exhibit high differential resistance characteristics. V TS With further increases, the P-type buried layer and the depletion layer within the P-type source region will also gradually expand, when V TS When the current increases to the point that most of the P-type source region is depleted, the hole current path within the P-type source region will also exhibit high differential resistance characteristics, at which point the current flowing from electrode T to electrode S reaches its peak. With... V TS As the voltage increases further, most of the electric field lines emitted by the positive charges of the ionized donors in the depleted N-type region are absorbed by the negative charges of the ionized acceptors in the depleted P-type source region, thereby changing the electric field distribution in the P-type source region. When the direction of the electric field in the P-type source region changes from the original direction from FOC to electrode S to the direction from electrode S to FOC, there will no longer be a current path between electrode T and electrode S. That is, electrode T and electrode S will exhibit a blocking effect, i.e., high resistance characteristics. When the voltage is large, the current drops significantly.

[0043] The switching speed at which the equivalent resistance between electrodes T and S changes from low to high resistance can reach the microsecond or even nanosecond level. This is because the formation of the depletion layer inside the semiconductor and the corresponding change in the electric field distribution within each semiconductor region occur on the nanosecond scale.

[0044] The solid-state circuit breaker implemented in this invention is a two-terminal component that does not require additional drive control and has the function of autonomously detecting abnormal overcurrent. It can respond quickly and autonomously cut off abnormal current within the μs level. It has advantages such as easy control, fast response, no electric arc, high withstand voltage, high reliability, and high cost performance.

[0045] Example 1:

[0046] Figure 3 This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 1 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The cathode K1 of the thyristor is connected to the electrode T of the TBC via a conductor, the gate G of the thyristor is connected to the first terminal H of the two-terminal element W via a conductor, and the other electrode S of the TBC is connected to the second terminal L of the two-terminal element W.

[0047] The thyristor has the following structure: The bottom of the thyristor is the anode electrode, anode A. Anode A has P-region 004, N-region 001, and P-region 002 arranged sequentially. The upper surface of the inner part of P-region 002 surrounds N-region 003, and the upper surface of P-region 002 is flush with the upper surface of N-region 003. The top of P-region 002 has a gate electrode, gate G, and the top of N-region 003 has a cathode electrode, cathode K1. Gate G and cathode K1 are isolated from each other.

[0048] When the current flowing through TBC I TS < I max At this time, TBC exhibits a low-resistance state. When the current flowing through TBC... I TS If more I max ,correspond V TS Exceed V 0, TBC is in a high-resistance state, and there is no longer a current path between electrodes T and S of TBC. The voltage across the two-terminal element W... V HL < V At 0, the two-terminal element W is cut off. V HL > VAt time 0, the two-terminal element W is open. The solid-state circuit breaker of the present invention is macroscopically a two-terminal component, wherein the anode A of the thyristor is the first electrode, and the electrode connected to the two-terminal element by the TBC serves as the second electrode K.

[0049] like Figure 4 As shown, during stable system operation, this solid-state circuit breaker is equivalent to a low-resistance conductor. When an anomaly occurs in the system and an overcurrent appears in the line, the solid-state circuit breaker will respond and interrupt the abnormal current within µs. Once the system current returns to normal, the circuit breaker will automatically enter the normal low-resistance state and continue operating. The specific implementation principle is as follows: When the system is running stably, the current flowing through the circuit breaker is much smaller than... I max With the two-terminal element W in the open state and TBC operating at low resistance, current flows from electrode A through the thyristor and TBC to electrode K. Electrons flow from electrode K1 into the thyristor's N-region 003 and then into the P-region 002, flowing through N-region 001 and finally reaching P-region 004. Simultaneously, a large number of holes are injected from P-region 004 into N-region 001 and eventually reach P-region 002. Due to the voltage across the two-terminal element W... V HL < V When the voltage is 0, the component W is cut off and cannot form a hole channel. Therefore, the hole will form a hole barrier near the P region 002. This barrier prevents the hole from being injected into the P region 002, causing the hole to accumulate on top of the N-type withstand voltage region 001. This, in turn, forms a strong conductivity modulation effect with the large number of electrons injected into the N region 003, which greatly reduces the on-resistance.

[0050] When an abnormal overcurrent occurs in the system, once the abnormal current exceeds... I max TBC will quickly, within µs, enter a high-resistivity state, cutting off the current path from electrode T to electrode S. V TS > V 0; at the same time, V HL > V When element W is turned on, the current channel from electrode H to electrode L is opened, promoting the rapid turn-off of the thyristor. At this time, electrons no longer inject into region P 002 from region N 003 of the thyristor, nor do electrons flow into region P 004 from region N 001. Therefore, region P 004 also stops injecting holes into region N. The unbalanced holes that were originally accumulated on top of region N 001 flow out from region P 002 through the current channel of element W. Subsequently, there is no longer a current channel inside the thyristor, thus achieving the function of cutting off the circuit.

[0051] When the system returns to normal, the system current is much smaller than I max At that time, the solid-state circuit breaker also automatically returns to the low-resistance operating state.

[0052] Example 2:

[0053] Figure 5 This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 2 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The relationship between the thyristor, TBC, and two-terminal element W is the same as in Embodiment 1, the difference being that the structure of the thyristor is different.

[0054] In this embodiment, the structure of the thyristor is as follows: the bottom of the thyristor is the anode electrode, namely anode A, and a P region 004, N region 001, P region 002 and N region 003 are arranged sequentially on anode A; a gate electrode, namely gate G, is provided on the side wall of P region 002; and a cathode electrode, namely cathode K1, is provided on the top of N region 003.

[0055] Examples 1 and 2 provide two specific structures for thyristors. Based on Examples 1 and 2, other thyristor structures in the art can also achieve the function of solid-state circuit breakers, which will not be elaborated here.

[0056] Example 3:

[0057] Figure 6 This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 3 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The relationship between the thyristor, TBC, and two-terminal element W is the same as in Embodiment 1. The difference is that in this embodiment, the two-terminal element W is a PMOS transistor with its gate and drain shorted, with its source serving as the first terminal H and its drain serving as the second terminal L.

[0058] Meanwhile, this embodiment also provides another solid-state circuit breaker structure. The two-terminal element W is composed of two or more PMOS transistors with their gates and drains shorted in parallel. The sources of all PMOS transistors are shorted to form the first terminal H of the two-terminal element W, and the drains of all PMOS transistors are shorted to form the second terminal L of the two-terminal element W. The two-terminal element W composed of two PMOS transistors with their gates and drains shorted in parallel is as follows... Figure 7 As shown.

[0059] Example 4:

[0060] Figure 8This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 4 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The relationship between the thyristor, TBC, and two-terminal element W is the same as in Embodiment 1. The difference is that in this embodiment, the two-terminal element W is a diode, with its positive terminal serving as the first terminal H and its negative terminal serving as the second terminal L.

[0061] Meanwhile, this embodiment also provides another solid-state circuit breaker structure. The two-terminal element W is composed of two or more diodes connected in series. The anode of the first diode serves as the first terminal H of the two-terminal element W. Among the intermediate diodes, the anode of the next diode is connected to the cathode of the previous diode. The cathode of the last diode serves as the second terminal L of the two-terminal element W. The two-terminal element W composed of two diodes connected in series is as follows... Figure 9 As shown.

[0062] Example 5:

[0063] Figure 10 This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 5 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The relationship between the thyristor, TBC, and two-terminal element W is the same as in Embodiment 1. The difference is that in this embodiment, the two-terminal element W is composed of a PMOS with its gate and drain shorted and a diode connected in parallel. The source of the PMOS is connected to the anode of the diode, and the connection point serves as the first terminal H of the two-terminal element W. The drain of the PMOS is connected to the cathode of the diode, and the connection point serves as the second terminal L of the two-terminal element W.

[0064] At the same time, such as Figure 11 As shown, this embodiment also provides another solid-state circuit breaker structure. The two-terminal element W is composed of an NMOS with its gate and drain shorted and a diode connected in parallel. The drain of the NMOS is connected to the positive terminal of the diode, and the connection point serves as the first terminal H of the two-terminal element W. The source of the NMOS is connected to the negative terminal of the diode, and the connection point serves as the second terminal L of the two-terminal element W.

[0065] Example 6:

[0066] Figure 12 This is a schematic diagram of a fast-response solid-state circuit breaker proposed in Embodiment 6 of the present invention. The solid-state circuit breaker consists of three parts: a TBC, a thyristor, and a two-terminal element W. The relationship between the thyristor, TBC, and two-terminal element W is the same as in Embodiment 1. The difference is that in this embodiment, the two-terminal element W is an NMOS transistor with its gate and drain shorted. Its drain is the first terminal H of the two-terminal element W, and its source is the second terminal L of the two-terminal element W.

[0067] Meanwhile, this embodiment also provides another solid-state circuit breaker structure. The two-terminal element W is composed of two or more NMOS transistors with their gates and drains shorted in parallel. The drains of all NMOS transistors are shorted to form the first terminal H of the two-terminal element W, and the sources of all PMOS transistors are shorted to form the second terminal L of the two-terminal element W. The two-terminal element W composed of two NMOS transistors with their gates and drains shorted in parallel is as follows... Figure 13 As shown.

[0068] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0069] The embodiments described above are merely illustrative, and the units described as separate components may or may not be physically separate. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0070] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A fast-responding solid-state circuit breaker, characterized by: The semiconductor two-terminal device, the thyristor and the two-terminal component are connected, the electrode T of the semiconductor two-terminal device is connected with the cathode K1 of the thyristor, the electrode S of the semiconductor two-terminal device is connected with the second end L of the two-terminal component, the first end H of the two-terminal component is connected with the gate G of the thyristor, the solid-state circuit breaker is a two-terminal component, the anode A of the thyristor is the first electrode of the solid-state circuit breaker, and the electrode S of the semiconductor two-terminal device is the second electrode K of the solid-state circuit breaker; The semiconductor two-terminal device is a semiconductor two-terminal device with current transient suppression function, the internal resistance is switched between low resistance and high resistance under different voltages between two electrodes, and the two-terminal component is a component with a shutdown function, which realizes the functions of conduction or shutdown under different voltages between two ends. When the system where the solid-state circuit breaker is located is in stable operation, the current flowing through the solid-state circuit breaker is much smaller than I max , the two-terminal element is in an open state, the semiconductor two-terminal device is in a low-resistance working state, the current flows from the first electrode to the second electrode K through the thyristor and the semiconductor two-terminal device, and the two-terminal element is cut off; When an abnormal overcurrent occurs in the system in which the solid-state circuit breaker is located, if the abnormal current exceeds I max , the semiconductor two-terminal device quickly enters a high resistance working state, the current channel from electrode T to electrode S in the semiconductor two-terminal device is cut off, V TS > V 0; at this time, the two-terminal element meets the conduction condition, the current channel from electrode H to electrode L in the two-terminal element is opened, the two-terminal element is opened, the thyristor is quickly turned off, and the function of cutting off the circuit is realized; When the system where the solid-state circuit breaker is located returns to normal working state, the current flowing through the solid-state circuit breaker is much smaller than I max the solid-state circuit breaker also automatically returns to the low-resistance state. Wherein, the maximum working current flowing through the solid-state circuit breaker is I max , I max The voltage drop of the corresponding semiconductor two-terminal device is V 0, the voltage across the semiconductor two-terminal device is V TS .

2. A fast responding solid state circuit breaker according to claim 1, characterized in that: The conducting condition of the two-terminal element includes: V HL > V 0, the two-terminal element is conducting; wherein the voltage across the two terminals of the two-terminal element is V HL , the voltage drop of the semiconductor two-terminal device corresponding to the maximum working current flowing through the solid-state circuit breaker is V 0.

3. A fast responding solid state circuit breaker according to claim 1, characterized in that: The two-terminal component is at least one PMOS tube with gate-drain short circuit, the source thereof is the first end H of the two-terminal component, and the drain thereof is the second end L of the two-terminal component; when the two-terminal component is two or more PMOS tubes with gate-drain short circuit, the PMOS tubes are connected in parallel, the sources of all the PMOS tubes are short-circuited to serve as the first end H of the two-terminal component, and the drains of all the PMOS tubes are short-circuited to serve as the second end L of the two-terminal component.

4. A fast responding solid state circuit breaker according to claim 1, characterized in that: The two-terminal component is at least one diode, the anode thereof is the first end H of the two-terminal component, and the cathode thereof is the second end L of the two-terminal component; when the two-terminal component is two or more diodes, the diodes are connected in series, the anode of the first diode serves as the first end H of the two-terminal component, among the diodes, the anode of the last diode is connected with the cathode of the previous diode, and the cathode of the last diode serves as the second end L of the two-terminal component.

5. A fast responding solid state circuit breaker according to claim 1, characterized in that: The two-terminal component is at least one PMOS tube with gate-drain short circuit and at least one diode connected in parallel, the source of the PMOS tube is connected with the anode of the diode, the connection point serves as the first end H of the two-terminal component, the drain of the PMOS tube is connected with the cathode of the diode, the connection point serves as the second end L of the two-terminal component, when the PMOS tube with gate-drain short circuit is two or more, the PMOS tubes are connected in parallel, and when the diode is two or more, the diodes are connected in series.

6. A fast responding solid state circuit breaker according to claim 1, characterized in that: The two-terminal component is at least one NMOS tube with gate-drain short circuit, the drain thereof is the first end H of the two-terminal component, and the source thereof is the second end L of the two-terminal component; when the two-terminal component is two or more NMOS tubes with gate-drain short circuit, the NMOS tubes are connected in parallel, the drains of all the NMOS tubes are short-circuited to serve as the first end H of the two-terminal component, and the sources of all the NMOS tubes are short-circuited to serve as the second end L of the two-terminal component.

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