Magnetic field detection module, magnetic field sensing module, magnetic field detection module and magnetic sensor

Abstract

The invention provides a magnetic field detection module, which comprises a magnetic field sensing module, a magnetic field detection module and a magnetic sensor, the magnetic field detection module comprises a first magnetic detection resistor, a second magnetic detection resistor, a third magnetic detection resistor and a fourth magnetic detection resistor which are connected in series, wherein an output node is formed between the second magnetic detection resistor and the third magnetic detection resistor; in a first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; in a second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; in the same state, the direction of the first excitation magnetic field is opposite to that of the second excitation magnetic field.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetic field detection, in particular to a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module and a magnetic sensor. BACKGROUND

[0002] Magnetic field detection technology has a wide range of application scenarios, and can be particularly applied in the fields of industry and automobiles. Magnetic field detection technology can be used to measure the rotation angle of objects such as gear shafts or mechanical devices, and can also be used to measure the position, stroke and other information of devices such as valves. For the former, a magnetic encoder can be configured to generate a magnetic field, drive the object to be measured to rotate synchronously in response to the magnetic field, and configure a magnetic sensor to measure the angle and speed of rotation. Currently, rotation detection technologies based on magnetic fields include Hall devices, anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), etc. Compared with giant magnetoresistance and tunneling magnetoresistance, Hall devices and anisotropic magnetoresistance have relatively mature technology and application, and have lower production cost and better environmental tolerance; and anisotropic magnetoresistance has a magnetic field sensitivity of about one to two orders of magnitude higher than Hall devices, and can also support faster response applications, which makes such technology occupy an irreplaceable position in various fields.

[0003] In the prior art, the rotation of the magnet will cause the magnetic field direction sensed by the magnetic sensing chip to produce a corresponding rotation, and an output is generated. The sensing device composed of anisotropic magnetoresistance technology will generate two sine and two cosine wave outputs when the magnetic field direction rotates 360 degrees, which means that the anisotropic magnetoresistance magnetic field sensing chip can only measure 180 degrees of angle change, and the output result curve from 0° to 180° is the same as the output result curve from 180° to 360°, and the magnetic field angle cannot be uniquely determined according to the output result. Therefore, how to improve the measurement range of the magnetic field angle is a technical problem to be solved in the field. SUMMARY

[0004] The main purpose of the present application is to provide a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module and a magnetic sensor, which aims to improve the measurement range of the magnetic field angle.

[0005] To achieve the above purpose, the magnetic field detection module provided by the present application comprises: The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor and the fourth magnetic detection resistor are connected in series, the first current direction at the first magnetic detection resistor is arranged at an angle with the second current direction at the second magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with the third current direction at the third magnetic detection resistor, and the third current direction at the third magnetic detection resistor is arranged at an angle with the fourth current direction at the fourth magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with the third current direction at the third magnetic detection resistor; and the second magnetic detection resistor and the third magnetic detection resistor form an output node; In the first state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; and the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; In the second state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; and the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; In the same state, the direction of the first excitation magnetic field and the direction of the second excitation magnetic field are opposite.

[0006] The application further provides a magnetic field sensing module, which comprises: The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor and the fourth magnetic detection resistor are connected in series, the first current direction at the first magnetic detection resistor is arranged at an angle with the second current direction at the second magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with the third current direction at the third magnetic detection resistor, and the third current direction at the third magnetic detection resistor is arranged at an angle with the fourth current direction at the fourth magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with the third current direction at the third magnetic detection resistor; and the second magnetic detection resistor and the third magnetic detection resistor form a first output node; The fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor are connected in series, a fifth current direction at the fifth magnetic detection resistor is arranged at an angle with a sixth current direction at the sixth magnetic detection resistor; the sixth current direction at the sixth magnetic detection resistor is arranged at an angle with a seventh current direction at the seventh magnetic detection resistor, and the seventh current direction at the seventh magnetic detection resistor is arranged at an angle with an eighth current direction at the eighth magnetic detection resistor; the sixth current direction at the sixth magnetic detection resistor is arranged at an angle with the seventh current direction at the seventh magnetic detection resistor; and a second output node is formed between the sixth magnetic detection resistor and the seventh magnetic detection resistor; The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor and the fourth magnetic detection resistor are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor. A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; and a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

[0007] The application further provides a magnetic field detection module, which comprises: The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor and the fourth magnetic detection resistor are connected in series, a first current direction at the first magnetic detection resistor is arranged at an angle with a second current direction at the second magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with a third current direction at the third magnetic detection resistor, and the third current direction at the third magnetic detection resistor is arranged at an angle with a fourth current direction at the fourth magnetic detection resistor; the second current direction at the second magnetic detection resistor is arranged at an angle with the third current direction at the third magnetic detection resistor; and a first output node is formed between the second magnetic detection resistor and the third magnetic detection resistor. The fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor are connected in series, and the fifth current direction at the fifth magnetic detection resistor and the sixth current direction at the sixth magnetic detection resistor are arranged at an angle; the sixth current direction at the sixth magnetic detection resistor and the seventh current direction at the seventh magnetic detection resistor are arranged at an angle, and the seventh current direction at the seventh magnetic detection resistor and the eighth current direction at the eighth magnetic detection resistor are arranged at an angle; the sixth current direction at the sixth magnetic detection resistor and the seventh current direction at the seventh magnetic detection resistor are arranged at an angle; and the sixth magnetic detection resistor and the seventh magnetic detection resistor form a second output node; The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor and the fourth magnetic detection resistor are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor. The first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; the fifth magnetic detection resistor and the eighth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a third excitation magnetic field; and the sixth magnetic detection resistor and the seventh magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a fourth excitation magnetic field. The direction of the first excitation magnetic field and the direction of the second excitation magnetic field are opposite, the direction of the third excitation magnetic field and the direction of the fourth excitation magnetic field are opposite, and the direction of the first excitation magnetic field and the direction of the third excitation magnetic field are opposite. The magnetic field detection module further comprises: The ninth magnetic detection resistor, the tenth magnetic detection resistor, the eleventh magnetic detection resistor and the twelfth magnetic detection resistor are connected in series, and the ninth current direction at the ninth magnetic detection resistor and the tenth current direction at the tenth magnetic detection resistor are arranged at an angle; the tenth current direction at the tenth magnetic detection resistor and the eleventh current direction at the eleventh magnetic detection resistor are arranged at an angle, and the eleventh current direction at the eleventh magnetic detection resistor and the twelfth current direction at the twelfth magnetic detection resistor are arranged at an angle; the tenth current direction at the tenth magnetic detection resistor and the eleventh current direction at the eleventh magnetic detection resistor are arranged at an angle; and the tenth magnetic detection resistor and the eleventh magnetic detection resistor form a third output node. a thirteenth magnetic detection resistor, a fourteenth magnetic detection resistor, a fifteenth magnetic detection resistor and a sixteenth magnetic detection resistor are connected in series, a thirteenth current direction at the thirteenth magnetic detection resistor is arranged at an angle with a fourteenth current direction at the fourteenth magnetic detection resistor; the fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle with a fifteenth current direction at the fifteenth magnetic detection resistor, and the fifteenth current direction at the fifteenth magnetic detection resistor is arranged at an angle with a sixteenth current direction at the sixteenth magnetic detection resistor; the fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle with the fifteenth current direction at the fifteenth magnetic detection resistor; a fourth output node is formed between the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor; the ninth magnetic detection resistor, the tenth magnetic detection resistor, the eleventh magnetic detection resistor and the twelfth magnetic detection resistor are connected in parallel with the thirteenth magnetic detection resistor, the fourteenth magnetic detection resistor, the fifteenth magnetic detection resistor and the sixteenth magnetic detection resistor; a signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth magnetic detection resistor and the twelfth magnetic detection resistor; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth magnetic detection resistor and the eleventh magnetic detection resistor; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth magnetic detection resistor and the sixteenth magnetic detection resistor; a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor; the direction of the fifth excitation magnetic field and the direction of the sixth excitation magnetic field are opposite, the direction of the seventh excitation magnetic field and the direction of the eighth excitation magnetic field are opposite, and the direction of the fifth excitation magnetic field is opposite to the direction of the seventh excitation magnetic field; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

[0008] The application further provides a magnetic sensor, which comprises the magnetic field detection module, or the magnetic field sensing module, or the magnetic field detection module.

[0009] The application provides a magnetic field detection module, a magnetic field sensing module, a magnetic field detection module and a magnetic sensor; the magnetic field detection module comprises: first, second, third and fourth magnetic detection resistors connected in series, the first magnetic detection resistor is arranged at an angle with a second current direction of the second magnetic detection resistor, the second current direction of the second magnetic detection resistor is arranged at an angle with a third current direction of the third magnetic detection resistor, and the third current direction of the third magnetic detection resistor is arranged at an angle with a fourth current direction of the fourth magnetic detection resistor; the second current direction of the second magnetic detection resistor is arranged at an angle with the third current direction of the third magnetic detection resistor; an output node is formed between the second magnetic detection resistor and the third magnetic detection resistor; in a first state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; in a second state, the first magnetic detection resistor and the fourth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; the second magnetic detection resistor and the third magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; in the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field. The first to fourth magnetic detection resistors constitute a Wheatstone half-bridge, and the first to fourth current directions are arranged to realize that the voltage value of the output node does not change with the direction of the signal magnetic field when only the signal magnetic field exists. In addition, by obtaining and drawing a ratio curve image of the voltage value of the output node and the supply voltage, the resistance curve image of the traditional anisotropic magnetoresistance device is replaced, and the situation that multiple sine waves are output and cannot be analyzed is avoided. In addition, in order to solve the problem that only one magnetic field angle can be obtained in a ratio curve image (also referred to as a state curve) corresponding to multiple magnetic field angles, different directions of excitation magnetic fields are applied to the magnetic detection resistors in the first state and the second state to obtain the output node voltage value in the first state and the output node voltage value in the second state. Since the first state curve and the second state curve do not coincide, the angle of the signal magnetic field can be uniquely obtained by the output node voltage value in the first state and the output node voltage value in the second state. The second state curve is specifically introduced to further determine the multiple magnetic field angles obtained by the first state curve. Based on the above ideas and technical steps, the Wheatstone half-bridge and the output node voltage values in the two states can highlight the differences between the anisotropic magnetoresistance magnetic field sensing chip between 0° and 360°, and the output node voltage values in the two states can correspond to the magnetic field angle of the signal magnetic field, so that the measurement range of the magnetic field angle is improved.More specifically, the magnetic field detection range of the anisotropic magnetoresistive magnetic field sensing chip is increased from 0° to 180° to 0° to 360°. BRIEF DESCRIPTION OF DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other drawings can also be obtained according to the structures shown in the drawings without creative labor for those skilled in the art.

[0011] Figure 1 Structure diagram of the first embodiment of the magnetic field detection module of the present application; Figure 2 First structure diagram of the second embodiment of the magnetic field detection module of the present application; Figure 3 Second structure diagram of the second embodiment of the magnetic field detection module of the present application; Figure 4 Relationship diagram between resistance value and magnetic field angle of the first embodiment of the magnetic field detection module of the present application; Figure 5 Third structure diagram of the second embodiment of the magnetic field detection module of the present application; Figure 6 First curve diagram of the magnetic field detection module of the present application; Figure 7 Relationship diagram between resistance value and magnetic field angle of the second embodiment of the magnetic field detection module of the present application; Figure 8 Second curve diagram of the magnetic field detection module of the present application; Figure 9 Third curve diagram of the magnetic field detection module of the present application; Figure 10 Fourth curve diagram of the magnetic field detection module of the present application; Figure 11 Relationship diagram between resistance value and magnetic field angle of the third embodiment of the magnetic field detection module of the present application; Figure 12 First structure diagram of the third embodiment of the magnetic field detection module of the present application; Figure 13 Magnetic field detection module diagram in the first state of the fourth embodiment of the magnetic field detection module of the present application; Figure 14 Magnetic field detection module diagram in the second state of the fourth embodiment of the magnetic field detection module of the present application; Figure 15 Fifth curve diagram of the magnetic field detection module of the present application; Figure 16 Fig. 7 is a schematic diagram of a magnetic field detection module in a second state according to a fifth embodiment of the present application; Figure 17 Fig. 8 is a schematic diagram of a magnetic field detection module according to a sixth embodiment of the present application; Figure 18 Fig. 9 is a schematic diagram of a magnetic field detection module according to a seventh embodiment of the present application; Figure 19 Fig. 10 is a schematic diagram of a magnetic field detection module in a first state according to a sixth embodiment of the present application; Figure 20 Fig. 11 is a schematic diagram of a magnetic field detection module according to an eighth embodiment of the present application; Figure 21 Fig. 12 is a schematic diagram of a magnetic field detection module in a ninth state according to the present application; Figure 22 Fig. 13 is a schematic diagram of a magnetic field detection module in a tenth state according to the present application; Figure 23 Fig. 14 is a schematic diagram of a magnetic field sensing module according to an embodiment of the present application; Figure 24 Fig. 15 is a schematic diagram of a magnetic field sensing module according to another embodiment of the present application; Figure 25 Fig. 16 is a schematic diagram of a magnetic field sensing module according to yet another embodiment of the present application; Figure 26 Fig. 17 is a schematic diagram of a magnetic field sensing module according to a first curve of the present application; Figure 27 Fig. 18 is a schematic diagram of a magnetic field sensing module according to yet another embodiment of the present application; Figure 28 Fig. 19 is a schematic diagram of a magnetic field sensing module according to a second curve of the present application; Figure 29 Fig. 20 is a schematic diagram of a magnetic field sensing module according to yet another embodiment of the present application; Figure 30 Fig. 21 is a schematic diagram of a magnetic field sensing module according to another embodiment of the present application; Figure 31 Fig. 22 is a schematic diagram of a magnetic field sensing module according to an embodiment of the present application; Figure 32 Fig. 23 is a schematic diagram of a magnetic field sensing module according to another embodiment of the present application; Figure 33 Fig. 24 is a schematic diagram of a magnetic field sensing module according to a first curve of the present application; Figure 34 Fig. 25 is a schematic diagram of a magnetic field sensing module according to yet another embodiment of the present application; Figure 35 Fig. 26 is a schematic diagram of a magnetic field sensing module according to a second curve of the present application.

[0012] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The objectives, functional characteristics and advantages of the present application will be further described with reference to the embodiments in combination with the accompanying drawings. DETAILED DESCRIPTION

[0014] The technical solutions in the embodiments of the present application will be clearly and completely described in combination with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative effort fall within the protection scope of the present application.

[0015] It should be noted that all the directionality indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain specific posture (as shown in the drawings). If the specific posture changes, the directionality indications also change accordingly.

[0016] In the present application, unless otherwise explicitly specified and limited, the terms “connection”, “fixation” and the like should be understood in a broad sense. For example, “fixation” can be fixed connection, or detachable connection, or integral; can be mechanical connection, or electrical connection; can be direct connection, or indirect connection through an intermediate medium; can be internal connection of two elements, or interaction relationship between two elements, unless otherwise explicitly limited. For a person of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0017] In addition, the description such as “first”, “second” and the like in the present application is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features, or implicitly indicating the number of the indicated technical features. Therefore, the features limited by “first”, “second” can explicitly or implicitly include at least one of the features. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the fact that a person of ordinary skill in the art can realize it. When the combination of technical solutions contradicts each other or cannot be realized, it should be considered that the combination of technical solutions does not exist, and is not within the protection scope required by the present application.

[0018] The present application provides a magnetic field detection module for sensing information of a magnetic field. The magnetic field detection module outputs corresponding magnetic field information to represent the detected magnetic field angle. The magnetic field detection module provided by the present application aims to improve the structure and the corresponding magnetic field application method, so as to make the magnetic field detection module provide more abundant magnetic field information content and realize a larger magnetic field angle measurement range.

[0019] AsFigures 1 to 3 As shown, the magnetic field detection module comprises: The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104 are connected in series, the first current direction at the first magnetic detection resistor 101 is arranged at an angle with the second current direction at the second magnetic detection resistor 102; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103, the third current direction at the third magnetic detection resistor 103 is arranged at an angle with the fourth current direction at the fourth magnetic detection resistor 104; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103; an output node is formed between the second magnetic detection resistor 102 and the third magnetic detection resistor 103.

[0020] It should be noted that the first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104 can each be composed of at least one magnetic sensitive resistor (or magnetic resistance element), which is defined as a resistor element sensitive to magnetism and having anisotropic magnetic resistance effect. Of course, in other embodiments, other components with sensitivity to magnetic field changes and clear magnetic field sensing direction can also be used.

[0021] The first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are connected in series, a first node P1 is formed at the first end of the first magnetic detection resistor 101, and a second node P2 is formed at the second end of the fourth magnetic detection resistor 104. One of the first node P1 and the second node P2 is used to access the supply voltage, and the other of the first node P1 and the second node P2 is used to access the reference ground. The voltage value at the output node formed between the second magnetic detection resistor 102 and the third magnetic detection resistor 103 is affected by the impedance values of the first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104. If the first node P1 accesses the supply voltage and the second node P2 accesses the reference ground, the calculation formula of the voltage value at the output node is: wherein V is the voltage value at the output node, is the supply voltage value, to The first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are respectively impedance values of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104. It needs to be explained that the resistance values of the magnetoresistance elements in the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are affected by the magnetic field applied thereto. The resistance values of each magnetic detection resistor can be changed by changing the magnetic field applied to each magnetic detection resistor, thereby changing the voltage value at the output node. In addition, it can be known from the anisotropic magnetoresistance effect of the magnetoresistance element that the magnetoresistance element is sensitive to the relationship between the magnetic field and the current direction, and the resistance of the magnetoresistance element changes with the change of the angle between the magnetization intensity and the current direction. The first magnetic detection resistor 101 and the second magnetic detection resistor 102 constitute a first series part 11, and the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104 constitute a second series part 12.

[0022] Based on the above concept, the present application changes the resistance value of the magnetoresistance element by changing the angle between the magnetization intensity and the current direction of the magnetoresistance element, thereby changing the voltage value at the output node. Specifically, each magnetic detection resistor is applied with an excitation magnetic field and a signal magnetic field carrying a direction signal, wherein the excitation magnetic field affects the angle between the magnetization intensity of the magnetoresistance element and the current direction thereof. Since the directions of the first current to the fourth current are angularly arranged, when the excitation magnetic field is changed, the resistance value of the magnetoresistance element is changed, and the resistance values of the magnetic detection resistors are also changed accordingly. The direction change of the excitation magnetic field changes the change value of the angle between the magnetization intensity and the current direction thereof, and the directions of the first current to the fourth current determine the initial angle between the magnetization intensity and the current direction thereof, which is the angle between the signal magnetic field and the current direction. Both the direction change of the excitation magnetic field and the directions of the first current to the fourth current determine the resistance values of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 after the excitation magnetic field is changed. Since the directions of the first current to the fourth current are angularly arranged, the resistance values of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are changed in different amplitudes and directions, and the change rule of the voltage value at the output node after the excitation magnetic field is changed is different from that before the excitation magnetic field is changed.

[0023] It is easy to understand that after determining the specific nodes of the first node P1 and the second node P2 accessing the power supply voltage and the angle between the first current direction and the fourth current direction, the first current direction to the fourth current direction can be determined, that is, the first current direction to the fourth current direction is fixed. At this time, for the magnetoresistance element, the initial angle between the magnetization and the current direction is determined by the signal magnetic field carrying the direction signal. Therefore, the change curve of the voltage value at the output node with the direction of the signal magnetic field before and after the excitation magnetic field changes can be determined first. From the above, it can be inferred that due to the change of the excitation magnetic field, the change value of the angle between the magnetization and the current direction will change, for example: the change value changes from positive to negative, or from negative to positive. The first current direction to the fourth current direction is fixed, that is, the initial angle between the magnetization and the current direction is fixed when the direction of the signal magnetic field is fixed. The curve between the voltage value at the output node and the direction angle of the signal magnetic field before and after the excitation magnetic field changes is obtained.

[0024] It is easy to determine that the curve before the excitation magnetic field changes and the curve after the excitation magnetic field changes are inconsistent; by adjusting the direction change when the excitation magnetic field changes and the setting angle between the first current direction and the fourth current direction, the curve before the excitation magnetic field changes and the curve after the excitation magnetic field changes can be adjusted, so that in the case that the signal magnetic field does not change (specifically, the magnetic field direction angle of the signal magnetic field does not change), the first output node voltage value corresponding to the magnetic field direction angle in the curve before the excitation magnetic field changes and the second output node voltage value corresponding to the magnetic field direction angle in the curve after the excitation magnetic field changes can be used to uniquely determine the magnetic field direction angle of the signal magnetic field. The first output node voltage value and the second output node voltage value before and after the excitation magnetic field changes can be used to determine the 360-degree signal magnetic field direction.

[0025] In the first embodiment of the present application, a feasible scheme for setting the angle between the first current direction and the fourth current direction is proposed. As shown in Figure 1 The first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

[0026] It should be noted that since the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are connected in series, the first current value to the fourth current value are equal; the impedance value of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 is determined by the excitation magnetic field, the signal magnetic field and the corresponding current direction. In actual application, the magnetic field detection module serves as part of the magnetic field sensor to measure the direction of the signal magnetic field; specifically, the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are packaged into the magnetic field detection module, and the magnetic field strength and the magnetic field direction of the signal magnetic field at each magnetic detection resistor can be considered the same. It is explained in the foregoing that the voltage value at the output node is related to the change of the direction of the excitation magnetic field (whether the signal magnetic field changes or not), but it should be pointed out that when the signal magnetic field changes, since the initial included angle of the magnetization strength and the current direction is changed, the voltage value at the output node also changes accordingly. It should be understood that in the curve between the voltage value at the output node and the direction angle of the signal magnetic field, the voltage value at the output node is related not only to the excitation magnetic field but also to the angle of the signal magnetic field. And the signal magnetic field needs to cooperate with the current direction to affect the voltage value at the output node. The present embodiment aims to reduce or eliminate the influence of the direction angle of the signal magnetic field on the change of the voltage value at the output node by giving the angle relationship of the first current direction to the fourth current direction.

[0027] The first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction. It can be considered that the first current direction is rotated three times according to a certain direction, and each time is rotated by ninety degrees to form the second current direction, the third current direction and the fourth current direction respectively. In a feasible example, the first current direction is consistent with the first direction, the second current direction is consistent with the second direction, the third current direction is consistent with the opposite direction of the first direction, and the fourth current direction is consistent with the opposite direction of the second direction. The first direction is perpendicular to the second direction.

[0028] As shown in Figure 4 , when the included angle between the direction of the signal magnetic field and the first current direction is , the included angle between the direction of the signal magnetic field and the second current direction is , the included angle between the direction of the signal magnetic field and the third current direction is , and the included angle between the direction of the signal magnetic field and the fourth current direction is . At this time, the resistance calculation formula of the first magnetic detection resistor 101 is: , wherein, R1 is the resistance value of the first magnetic detection resistor 101, R1 is the resistance value of the first magnetic detection resistor 101, R1 is the resistance value of the first magnetic detection resistor 101.

[0029] The resistance calculation formula of the second magnetic detection resistor 102 is: wherein, R2 is the resistance value of the second magnetic detection resistor 102, R2 is the resistance value of the second magnetic detection resistor 102, R2 is the resistance value of the second magnetic detection resistor 102.

[0030] The resistance calculation formula of the third magnetic detection resistor 103 is: wherein, R3 is the resistance value of the third magnetic detection resistor 103, R3 is the resistance value of the third magnetic detection resistor 103, R3 is the resistance value of the third magnetic detection resistor 103.

[0031] The resistance calculation formula of the fourth magnetic detection resistor 104 is: wherein, R4 is the resistance value of the fourth magnetic detection resistor 104, R4 is the resistance value of the fourth magnetic detection resistor 104, R4 is the resistance value of the fourth magnetic detection resistor 104.

[0032] From the above, the calculation formula of the voltage value at the output node is: , combined with the calculation formula of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104, the voltage value at the output node is: When the resistance values of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are the same when the signal magnetic field direction is parallel to the current direction, and the resistance values are the same when the signal magnetic field direction is perpendicular to the current direction, the voltage value at the output node is: ​​​That is, it can be obtained that the output node voltage value remains unchanged when the signal magnetic field direction changes. In the scheme proposed in the first embodiment of the present application, the influence of the signal magnetic field direction angle on the voltage value change at the output node is reduced or eliminated by setting the angle between the first current direction and the fourth current direction.

[0033] It should be noted that the present application takes the first embodiment as an example to give an angle relationship between current directions, which realizes the elimination of the influence of the signal magnetic field direction angle on the voltage value change at the output node. It does not mean that only the angle relationship in the first embodiment can reduce or eliminate the influence of the signal magnetic field direction angle on the voltage value change at the output node. Other angle relationships of the first current direction to the fourth current direction can be found by experimental method or theoretical simulation calculation to realize the reduction of the influence of the signal magnetic field direction angle on the voltage value change at the output node.

[0034] As shown in FIG. 1, Figure 5 As shown in FIG. 2, in the second embodiment, the first magnetic detection resistor 101 includes a first magnetic resistance element RA1, a second magnetic resistance element RA2 and a third magnetic resistance element RA3 connected in series. In a feasible implementation, the first magnetic resistance element RA1, the second magnetic resistance element RA2 and the third magnetic resistance element RA3 have the same magnetic resistance effect coefficient and / or magnetic sensitive direction. The first magnetic resistance element RA1 extends along a first direction from its first end to its second end; the second end of the first magnetic resistance element RA1 is coupled with the first end of the second magnetic resistance element RA2, and the second magnetic resistance element RA2 extends along the opposite direction of the first direction from its first end to its second end; the second end of the second magnetic resistance element RA2 is coupled with the first end of the third magnetic resistance element RA3; the third magnetic resistance element RA3 extends along the first direction from its first end to its second end; wherein the first direction refers to Figures 1 to 5 the X direction and the opposite direction thereof.

[0035] When the current is input into the first magnetic detection resistor 101, the position of current input and the extension direction of the magnetic resistance element determine the current direction at the corresponding magnetic resistance element; for example, when the current is input into the first end of the first magnetic resistance element RA1, the first magnetic resistance element RA1, the second magnetic resistance element RA2 and the third magnetic resistance element RA3 form their own current directions according to the above extension directions. In summary, the first magnetic detection resistor 101 will form a first current direction consistent with the first direction.

[0036] The second magnetic detection resistor 102 comprises a fourth magnetic resistance element RB1, a fifth magnetic resistance element RB2 and a sixth magnetic resistance element RB3 connected in series. In an embodiment, the fourth magnetic resistance element RB1, the fifth magnetic resistance element RB2 and the sixth magnetic resistance element RB3 have the same magnetic resistance effect coefficient and / or the same magnetic sensitive direction. The fourth magnetic resistance element RB1 extends from its first end to its second end along the second direction; the second end of the fourth magnetic resistance element RB1 is coupled with the first end of the fifth magnetic resistance element RB2, and the fifth magnetic resistance element RB2 extends from its first end to its second end along the opposite direction of the second direction; the second end of the fifth magnetic resistance element RB2 is coupled with the first end of the sixth magnetic resistance element RB3; the sixth magnetic resistance element RB3 extends from its first end to its second end along the second direction; wherein the second direction is the Y direction and the opposite direction of the Y direction. Figures 1 to 5 The second direction is the Y direction and the opposite direction of the Y direction.

[0037] When the current is input into the second magnetic detection resistor 102, the position of the current input and the extension direction of the magnetic resistance element determine the current direction at the corresponding magnetic resistance element; for example, when the current is input into the first end of the fourth magnetic resistance element RB1, the fourth magnetic resistance element RB1, the fifth magnetic resistance element RB2 and the sixth magnetic resistance element RB3 form their own current directions according to the above extension directions. In summary, the second magnetic detection resistor 102 forms a second current direction consistent with the second direction.

[0038] The third magnetic detection resistor 103 comprises a seventh magnetic resistance element RC1, an eighth magnetic resistance element RC2 and a ninth magnetic resistance element RC3 connected in series. In an embodiment, the seventh magnetic resistance element RC1, the eighth magnetic resistance element RC2 and the ninth magnetic resistance element RC3 have the same magnetic resistance effect coefficient and / or the same magnetic sensitive direction. The seventh magnetic resistance element RC1 extends from its first end to its second end along the opposite direction of the first direction; the second end of the seventh magnetic resistance element RC1 is coupled with the first end of the eighth magnetic resistance element RC2, and the eighth magnetic resistance element RC2 extends from its first end to its second end along the first direction; the second end of the eighth magnetic resistance element RC2 is coupled with the first end of the ninth magnetic resistance element RC3; the ninth magnetic resistance element RC3 extends from its first end to its second end along the opposite direction of the first direction; wherein the second direction is the Y direction and the opposite direction of the Y direction. Figures 1 to 5 The second direction is the Y direction and the opposite direction of the Y direction.

[0039] When current is input into the third magnetic detection resistor 103, the position of current input and the extension direction of the magnetic resistance element determine the current direction at the corresponding magnetic resistance element; for example, when current is input into the first end of the seventh magnetic resistance element RC1, the seventh magnetic resistance element RC1, the eighth magnetic resistance element RC2 and the ninth magnetic resistance element RC3 form their own current directions according to the above extension directions. In summary, the third current direction consistent with the opposite direction of the first direction is formed at the third magnetic detection resistor 103.

[0040] The fourth magnetic detection resistor 104 includes the tenth magnetic resistance element RD1, the eleventh magnetic resistance element RD2 and the twelfth magnetic resistance element RD3 connected in series. In a feasible implementation, the tenth magnetic resistance element RD1, the eleventh magnetic resistance element RD2 and the twelfth magnetic resistance element RD3 have the same magnetic resistance effect coefficient and / or magnetic sensitive direction. The tenth magnetic resistance element RD1 extends from its first end to its second end along the opposite direction of the second direction; the second end of the tenth magnetic resistance element RD1 is coupled with the first end of the eleventh magnetic resistance element RD2, and the eleventh magnetic resistance element RD2 extends from its first end to its second end along the second direction; the second end of the eleventh magnetic resistance element RD2 is coupled with the first end of the twelfth magnetic resistance element RD3; the twelfth magnetic resistance element RD3 extends from its first end to its second end along the opposite direction of the second direction; wherein the second direction refers to Figures 1 to 5 the Y direction and the opposite direction thereof.

[0041] When current is input into the fourth magnetic detection resistor 104, the position of current input and the extension direction of the magnetic resistance element determine the current direction at the corresponding magnetic resistance element; for example, when current is input into the first end of the tenth magnetic resistance element RD1, the tenth magnetic resistance element RD1, the eleventh magnetic resistance element RD2 and the twelfth magnetic resistance element RD3 form their own current directions according to the above extension directions. In summary, the fourth current direction consistent with the opposite direction of the second direction is formed at the fourth magnetic detection resistor 104.

[0042] It should be noted that the second embodiment of the present application gives a specific composition of the first to fourth magnetic detection resistors 101 to 104. In terms of current direction, the current directions of the first magnetic resistance element RA1, the third magnetic resistance element RA3 and the eighth magnetic resistance element RC2 are the X direction; the current directions of the second magnetic resistance element RA2, the seventh magnetic resistance element RC1 and the ninth magnetic resistance element RC3 are the opposite direction of the X direction; the current directions of the fourth magnetic resistance element RB1, the sixth magnetic resistance element RB3 and the eleventh magnetic resistance element RD2 are the Y direction; and the current directions of the fifth magnetic resistance element RB2, the tenth magnetic resistance element RD1 and the eleventh magnetic resistance element RD2 are the opposite direction of the Y direction. Similarly, when the angle between the direction of the signal magnetic field and the X direction is , the angle between the direction of the signal magnetic field and the Y direction is , the angle between the direction of the signal magnetic field and the opposite direction of the X direction is , and the angle between the direction of the signal magnetic field and the opposite direction of the Y direction is .

[0043] When the first to twelfth magnetic resistance elements RA1 to RD3 all have the same magnetic resistance effect coefficient, the resistance values of the first to twelfth magnetic resistance elements RA1 to RD3 and the angle of the signal magnetic field applied thereto are as follows: the magnetic resistance element whose current direction is the same as the X direction, , wherein R1 is the resistance value of the first magnetic resistance element RA1, R3 is the resistance value of the third magnetic resistance element RA3, R2 is the resistance value of the eighth magnetic resistance element RC2, R is the resistance value when the direction of the signal magnetic field at the magnetic resistance element is parallel to the current direction, R is the resistance value when the direction of the signal magnetic field at the magnetic resistance element is perpendicular to the current direction.

[0044] the magnetic resistance element whose current direction is the same as the opposite direction of the X direction, , wherein R1 is the resistance value of the seventh magnetic resistance element RC1, R3 is the resistance value of the ninth magnetic resistance element RC3, R2 is the resistance value of the second magnetic resistance element RA2.

[0045] the magnetic resistance element whose current direction is the same as the Y direction, , wherein R1 is the resistance value of the fourth magnetic resistance element RB1, The resistance value of the sixth magnetoresistance element RB3, The resistance value of the eleventh magnetoresistance element RD2.

[0046] The magnetoresistance element whose current direction is opposite to the Y direction, , wherein, The resistance value of the tenth magnetoresistance element RD1, The resistance value of the twelfth magnetoresistance element RD3, The resistance value of the fifth magnetoresistance element RB2.

[0047] Since the first magnetoresistance element RA1 to the twelfth magnetoresistance element RD3 are arranged in series, the voltage value at the output node is .

[0048] Further, according to the above formula and the current direction of the magnetoresistance element, the voltage value at the output node is , and the following condition needs to be met: the magnetic field detection module is divided into two parts at the output node, the first node P1 and the second node P2, respectively, the first node P1 to the output node, and the second node P2 to the output node. As long as the resistance values in the two parts are the same, the voltage value at the output node can be ensured to be .

[0049] Based on the above idea, the present application proposes the following current direction collocation forms: I. The first current direction is the same as the X direction, the second current direction is the same as the Y direction, the third current direction is opposite to the X direction, and the fourth current direction is opposite to the Y direction.

[0050] II. The first current direction is the same as the X direction, the second current direction is the same as the Y direction, the third current direction is opposite to the Y direction, and the fourth current direction is opposite to the X direction.

[0051] III. The first current direction is the same as the X direction, the second current direction is opposite to the Y direction, the third current direction is opposite to the X direction, and the fourth current direction is the same as the Y direction.

[0052] IV. The first current direction is the same as the X direction, the second current direction is opposite to the Y direction, the third current direction is the same as the Y direction, and the fourth current direction is opposite to the X direction.

[0053] V. The first current direction is opposite to the X direction, the second current direction is the same as the Y direction, the third current direction is the same as the X direction, and the fourth current direction is opposite to the Y direction.

[0054] Sixth, the first current direction is opposite to the X direction, the second current direction is the same as the Y direction, the third current direction is the same as the Y direction, and the fourth current direction is opposite to the X direction.

[0055] Seventh, the first current direction is opposite to the X direction, the second current direction is opposite to the Y direction, the third current direction is the same as the X direction, and the fourth current direction is the same as the Y direction.

[0056] Eighth, the first current direction is opposite to the X direction, the second current direction is opposite to the Y direction, the third current direction is the same as the Y direction, and the fourth current direction is the same as the X direction.

[0057] It should be noted that the arrangement and position of the first to fourth magnetic detection resistors 101-104 are adjusted according to the first to fourth current directions.

[0058] In addition, based on the above concept, when the first to ninth magnetic resistance elements RA1-RC3 have the same magnetic resistance effect coefficient, and the fourth to twelfth magnetic resistance elements RB1-RD3 have the same magnetic resistance effect coefficient, it can be determined that under the current direction relationship described in the second embodiment, the voltage value at the output node is .

[0059] In the first state, the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor 102 and the third magnetic detection resistor 103 are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; in a feasible example, as Figure 2 shown.

[0060] In the second state, the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; the second magnetic detection resistor 102 and the third magnetic detection resistor 103 are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; in a feasible example, as Figure 3 shown.

[0061] In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

[0062] It should be noted that the maximum difference between the first state and the second state for the magnetic detection resistor is the excitation magnetic field. It is easy to understand that a signal magnetic field carrying direction information is applied at each magnetic detection resistor, which forms a signal magnetization direction at the magnetic detection resistor. In addition, an excitation magnetic field is applied at each magnetic detection resistor, which deflects the signal magnetization direction to form an excitation magnetization direction; the angle between the excitation magnetization direction and the current direction of the magnetic detection resistor affects the resistance value of the magnetic detection resistor. For example, in the first state, a signal magnetic field carrying direction information is applied at the first magnetic detection resistor 101, which forms a signal magnetization direction at the first magnetic detection resistor 101. A first excitation magnetic field is applied to the first magnetic detection resistor 101, which deflects the signal magnetization direction to form a first excitation magnetization direction.

[0063] It should be particularly noted that the excitation magnetic field deflects the signal magnetization direction to form the excitation magnetization direction, which complies with the parallelogram law of vector composition; the direction and intensity of the excitation magnetic field can affect the angle between the excitation magnetization direction and the current direction. The embodiment of the present application fixes the intensity of the excitation magnetic field to avoid the change of the intensity of the excitation magnetic field interfering with the excitation magnetization direction. In addition, it should be noted that the embodiment of the present application changes the direction of the excitation magnetic field by rapid switching to obtain the voltage value of the output node in the first state and the voltage value of the output node in the second state. During the state switching process, the signal magnetic field can be considered unchanged.

[0064] As shown in Figure 6 , when the signal magnetic field is a magnetic field with a fixed field strength but a continuously changing direction, if no excitation magnetic field is applied, the magnetic field detection module presents an output as shown in the standard state curve state0. It should be noted that the state0 curve is affected by the angle between the first current direction and the fourth current direction, and the specific reasons have been explained above. In particular, in a feasible example, the voltage value at the output node of the magnetic field detection module is , as shown in Figure 6 .

[0065] In addition, when no excitation magnetic field is applied, due to the different current directions through the first magnetic resistance element RA1 to the twelfth magnetic resistance element RD3, the angles between the signal magnetization direction and the current direction in each magnetic resistance element are also different. As shown in Figure 7 , the resistance values of the magnetic Figure 7 resistance elements are shown when the direction angle of the signal magnetic field is .

[0066] If the first state corresponds to the application of an excitation magnetic field, the magnetic field detection module presents an output as shown in the first state curve state1, as shown in Figure 8As shown; it can be seen that, compared with the standard state curve state0, the curve formed by the output data of the magnetic field detection module is deformed under the action of the excitation magnetic field. It is easy to understand that the output data of the magnetic field detection module is essentially the voltage value of the output node, and the deformation of the first state curve state1 compared with the standard state curve state0 is essentially because the resistance values of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 change to different degrees when the direction angle of the signal magnetic field changes. Due to the different degrees of change in the resistance values of the magnetic detection resistors, the deformation of the first state curve state1 is formed. In particular, when the magnetic field detection module includes the first magnetic resistance element RA1 to the twelfth magnetic resistance element RD3, the resistance values of each magnetic resistance element change to different degrees when the direction angle of the signal magnetic field changes, causing the deformation of the curve.

[0067] Correspondingly, if the second state corresponds to the excitation magnetic field, the output of the second state curve presented by the magnetic field detection module also deforms under the action of the excitation magnetic field, forming a deformation like the second state curve state2. It is easy to understand that because the magnetic field applied to each magnetic detection resistor in the first state is different from the magnetic field applied to each magnetic resistance in the second state; compared with the standard state curve, the deformation direction of the first state curve is different from that of the second state curve at the same signal magnetic field angle. As shown. Figure 9

[0068] It is easy to understand that the first state curve and the second state curve do not coincide, and for the same signal magnetic field angle, the corresponding value of the first state curve is different from that of the second state curve; the first state curve and the second state curve are different at least in one dimension (for example: amplitude). The present application uniquely determines the angle of the signal magnetic field by obtaining the first voltage value and the second voltage value corresponding to the signal magnetic field angle of the first state curve in the first state and the second state curve in the second state.

[0069] It should be noted that the present application does not limit whether the first excitation magnetic field in the first state and the second state is the same / consistent, and whether the second excitation magnetic field in the first state and the second state is the same / consistent. That is, the first excitation magnetic field in the first state and the second state can be the same or different; correspondingly, the second excitation magnetic field in the first state and the second state can be the same or different. The following are two cases: ​I. In different states, the direction of the first excitation magnetic field changes; for example: in the first state, the direction of the first excitation magnetic field is different from that in the second state. Correspondingly, since the direction of the second excitation magnetic field is opposite to that of the first excitation magnetic field, it is easy to obtain that the direction of the second excitation magnetic field in the first state is different from that in the second state. In addition, it should be particularly pointed out that the second excitation magnetic field applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 in the second state is different from the second excitation magnetic field applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103 in the first state. Correspondingly, the first excitation magnetic field applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 in the first state is different from the first excitation magnetic field applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103 in the second state. That is, the first excitation magnetic field in the first state and the first excitation magnetic field in the second state cannot be considered as equivalent, and the second excitation magnetic field in the first state and the second excitation magnetic field in the second state cannot be considered as equivalent.

[0070] From the above, it can be seen that the excitation magnetic field causes the signal magnetization direction to deflect to form an excitation magnetization direction; the angle between the excitation magnetization direction and the current direction of the magnetic detection resistor affects the resistance value of the magnetic detection resistor; and the resistance value of the magnetic detection resistor affects the voltage value of the output node. The present application can determine the magnetic field direction angle of the signal magnetic field by combining the voltage value of the output node in the first state and the voltage value of the output node in the second state, and the first state curve corresponding to the first state and the second state curve corresponding to the second state.

[0071] II. The first excitation magnetic field in the first state and the second state is the same. Since the direction of the first excitation magnetic field is opposite to that of the second excitation magnetic field, the second excitation magnetic field in the first state and the second state is the same. Since the second state is compared with the first state, only the excitation magnetic field at the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 changes, specifically, the direction of the excitation magnetic field changes to the opposite direction. The voltage value of the output node is the voltage value after the power supply voltage value is divided by the voltage dividing circuit composed of the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104. When the direction of the excitation magnetic field at the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 changes to the opposite direction, the state curve of the voltage value of the output node changing with the signal magnetic field angle value is symmetrical about the voltage value ; as shown in the figure, the image is symmetrical about the vertical coordinate 0.5. Figure 10

[0072] ​Since for the magnetic field detection module, first, the first to fourth magnetic detection resistors 101-104 are applied with the excitation magnetic field to enter the first state, and the voltage value of the output node in the first state is obtained; then the first to fourth magnetic detection resistors 101-104 are applied with the excitation magnetic field to enter the second state, and the voltage value of the output node in the second state is obtained. Although the two state curves before and after the excitation magnetic field direction changes are symmetrical about the voltage value ; but after the first obtained output node voltage value is marked as the voltage value in the first state, the angle value of the signal magnetic field can be uniquely determined according to the voltage values of the two output nodes and the acquisition sequence of the output node voltage values.

[0073] The angle value of the signal magnetic field is uniquely determined according to the voltage values of the two output nodes and the acquisition sequence of the output node voltage values. It should be noted that the above method of determining the angle value of the signal magnetic field can also be applied to the case where the direction of the first excitation magnetic field changes in different states.

[0074] It is easy to understand that although the present application does not limit whether the first excitation magnetic field in the first state and the second state is the same / consistent. But in order to subsequently determine the angle value of the signal magnetic field according to the output node voltage value in the first state and the output node voltage value in the second state; the following two methods can be used: one, the angle difference between the two first excitation magnetic fields in the first state and the second state is determined in advance by the researchers. Two, store the first state curve and the second state curve of the output node under multiple excitation magnetic field angles in advance, after obtaining the voltage value of the output node in the first state, call the first state curve corresponding to the direction of the first excitation magnetic field in the first state, after obtaining the voltage value of the output node in the second state, call the second state curve corresponding to the direction of the second excitation magnetic field in the second state. Then, the angle value of the signal magnetic field is obtained from the voltage values of the output nodes in the two states combined with the first state curve and the second state curve.

[0075] In the magnetic field detection module provided by the present application, the excitation magnetic field can be superimposed while the signal magnetic field is applied, so that the magnetization direction formed by the signal magnetic field acting on the magnetic detection resistor is deflected, the resistance values between different magnetic detection resistors are different, and the output of the magnetic field detection module is deformed corresponding to different angle ranges, so that the magnetic field detection module also has sensitivity to other magnetic field angles outside the original magnetic field angle sensing range, to support sensing of a larger magnetic field angle sensing range, and to improve the richness of the obtained magnetic field information content.

[0076] The excitation magnetic field can be formed by a magnetic field generating module. If different excitation magnetic fields need to be applied to different magnetoresistors, different magnetic field generating modules can be arranged at different detection resistors respectively. The magnetic field generating module can be an independent component or a partial conductor segment of a coil structure.

[0077] In the third embodiment of the application, the first magnetic detection resistor 101 is provided with a first magnetic field generating module 201, the second magnetic detection resistor 102 is provided with a second magnetic field generating module 202, the third magnetic detection resistor 103 is provided with a third magnetic field generating module 203, and the fourth magnetic detection resistor 104 is provided with a fourth magnetic field generating module 204. Each magnetic field generating module is used to generate a first excitation magnetic field or a second excitation magnetic field corresponding to the respective magnetic detection resistor.

[0078] Specifically, as shown in Figure 2 , Figure 3 and Figure 11 , in the first state, the first magnetic field generating module 201 generates a first excitation magnetic field at the first magnetic detection resistor 101, and the fourth magnetic field generating module 204 generates a first excitation magnetic field at the fourth magnetic detection resistor 104. The first excitation magnetic field deflects the signal magnetization direction of the signal magnetic field at the first magnetic detection resistor 101 by a first angle , and the first excitation magnetic field deflects the signal magnetization direction of the signal magnetic field at the fourth magnetic detection resistor 104 by a fourth angle . The first magnetic detection resistor and the fourth magnetic detection resistor both have the same first excitation magnetic field and signal magnetic field. It is easy to understand that the first angle and the fourth angle are equal. The second magnetic field generating module 202 generates a second excitation magnetic field at the second magnetic detection resistor 102, and the third magnetic field generating module 203 generates a second excitation magnetic field at the third magnetic detection resistor 103. The second excitation magnetic field deflects the signal magnetization direction of the signal magnetic field at the second magnetic detection resistor 102 by a second angle , and the second excitation magnetic field deflects the signal magnetization direction of the signal magnetic field at the third magnetic detection resistor 103 by a third angle . The second magnetic detection resistor and the third magnetic detection resistor both have the same second excitation magnetic field and signal magnetic field, and the second angle and the third angle are equal.

[0079] It is easy to understand that, based on the signal magnetic field strength and direction of the magnetic field is constant, and the magnetic field strength of the excitation magnetic field is constant, the first angle and the second angle can be obtained by vector composition rule (parallelogram angle relationship) that the first angle and the second angle are complementary. Only the direction of the excitation magnetic field is perpendicular to the direction of the signal magnetic field, the first angle and the second angle are opposite numbers, that is .

[0080] In the second state, the first magnetic field generating module 201 generates a second excitation magnetic field at the first magnetic detection resistor 101, the fourth magnetic field generating module 204 generates a second excitation magnetic field at the fourth magnetic detection resistor 104, the second magnetic field generating module 202 generates a first excitation magnetic field at the second magnetic detection resistor 102, and the third magnetic field generating module 203 generates a first excitation magnetic field at the third magnetic detection resistor 103. It should be noted that, since the direction of the first excitation magnetic field and the direction of the second excitation magnetic field are opposite, the rotation direction of the signal magnetization direction of each magnetic detection resistor changes after the excitation magnetic field is replaced, and becomes the opposite direction before the excitation magnetic field is replaced. It can be understood that, since the rotation direction of the signal magnetization direction at the magnetic detection resistor changes before and after the excitation magnetic field is replaced, it can be obtained that the state curve constructed by the voltage value of the output node in the first state and the state curve constructed by the voltage value of the output node in the second state do not coincide; the angle value of the signal magnetic field can be uniquely determined according to the voltage value of the output node in the first state and the voltage value of the output node in the second state, and the acquisition sequence of the voltage value of the output node.

[0081] It should be noted that the present application uniquely determines the angle value of the signal magnetic field depending on the voltage value of the output node in the first state and the voltage value of the output node in the second state. In order to achieve the goal, the present application needs to make the following restrictions: the first excitation magnetic field in the first state cannot be in the same direction as the second excitation magnetic field in the second state. Because in the first state or the second state, the direction of the first excitation magnetic field and the second excitation magnetic field in the same state is opposite; the above restriction can be changed to: the first excitation magnetic field in the first state cannot be opposite to the direction of the first excitation magnetic field in the second state. It is easy to understand that, if the first excitation magnetic field in the first state is in the same direction as the second excitation magnetic field in the second state, and the magnetic field strength of the excitation magnetic field is constant, the signal magnetization direction deflection angle of the magnetic detection resistor in the first state and the signal magnetization direction deflection angle in the second state are the same, that is, the resistance of each magnetic detection resistor in the first state and the resistance in the second state are equal, in this case, the first state curve and the second state curve coincide, and the angle of the signal magnetic field cannot be determined by the values of the same signal magnetic field angle on the first state curve and the second state curve.

[0082] The application provides a magnetic field detection module, the application comprises a Wheatstone half-bridge formed by first to fourth magnetic detection resistors 104, and the first to fourth current directions are set to realize that the voltage value of an output node is not changed with the signal magnetic field direction when only the signal magnetic field exists. In addition, the ratio curve image of the output node voltage value and the supply voltage is obtained and drawn to replace the resistance curve image of the traditional anisotropic magnetoresistance device, thereby avoiding the traditional output of multiple sine waves and the situation that the multiple sine waves cannot be analyzed.

[0083] In addition, in order to solve the problem that the magnetic field angle cannot be uniquely obtained in the case of a ratio curve image (also referred to as a state curve) corresponding to multiple magnetic field angles, the application applies excitation magnetic fields with different directions to the magnetic detection resistors in a first state and a second state to obtain the output node voltage value in the first state and the output node voltage value in the second state. Since the first state curve and the second state curve do not coincide, the angle of the unique signal magnetic field can be obtained by the output node voltage value in the first state and the output node voltage value in the second state. The multiple magnetic field angles obtained by the first state curve and the second state curve are further determined. Based on the above ideas and technical steps, the application can highlight the difference between the anisotropic magnetoresistance magnetic field sensing chip between 0° and 360° by the Wheatstone half-bridge and the output node voltage values in the two states, and the output node voltage values in the two states are one-to-one corresponding to the magnetic field angle of the signal magnetic field, so that the measurement range of the magnetic field angle is improved. More specifically, the magnetic field detection range of the anisotropic magnetoresistance magnetic field sensing chip is improved from 0° to 180° to 0° to 360°. That is, the magnetic field detection module corresponds to form a first output node signal in the first state and a second output node signal in the second state; the first output node signal and the second output node signal are used to match the magnetic field detection range to the value interval of 0 degrees to 360 degrees.

[0084] The first magnetic detection resistor 101 comprises a first magnetic resistance element RA1, a second magnetic resistance element RA2 and a third magnetic resistance element RA3 which are sequentially connected in series and extend along a first direction; the second magnetic detection resistor 102 comprises a fourth magnetic resistance element RB1, a fifth magnetic resistance element RB2 and a sixth magnetic resistance element RB3 which are sequentially connected in series and extend along a second direction; the third magnetic detection resistor 103 comprises a seventh magnetic resistance element RC1, an eighth magnetic resistance element RC2 and a ninth magnetic resistance element RC3 which are sequentially connected in series and extend along the first direction in the reverse direction; and the fourth magnetic detection resistor 104 comprises a tenth magnetic resistance element RD1, an eleventh magnetic resistance element RD2 and a twelfth magnetic resistance element RD3 which are sequentially connected in series and extend along the second direction in the reverse direction.

[0085] It should be noted that the present application does not limit the specific extension direction of the second magnetoresistance element RA2, the fifth magnetoresistance element RB2, the eighth magnetoresistance element RC2 and the eleventh magnetoresistance element RD2; only need to meet the magnetic field detection module only when the signal magnetic field exists, the voltage value of the output node does not change when the magnetic field direction of the signal magnetic field changes. It is easy to understand that the extension direction of the second magnetoresistance element RA2 and the extension direction of the eighth magnetoresistance element RC2 are opposite, and the extension direction of the fifth magnetoresistance element RB2 and the extension direction of the eleventh magnetoresistance element RD2 are opposite. The extension direction of the second magnetoresistance element RA2 and the sixth magnetoresistance element RB3 has the following two forms: one, the second magnetoresistance element RA2 extends along the first direction, and the eighth magnetoresistance element RC2 extends along the opposite direction of the first direction, as shown in Figure 12 Two, the second magnetoresistance element RA2 extends along the opposite direction of the first direction, and the eighth magnetoresistance element RC2 extends along the first direction, as shown in Figure 5 Correspondingly, the extension direction of the fifth resistance element and the eleventh magnetoresistance element RD2 has the following two forms: one, the fifth magnetoresistance element RB2 extends along the second direction, and the eleventh magnetoresistance element RD2 extends along the opposite direction of the second direction. Two, the fifth magnetoresistance element RB2 extends along the opposite direction of the second direction, and the eleventh magnetoresistance element RD2 extends along the second direction.

[0086] Take the first magnetic detection resistor 101 as an example. The first magnetic resistance element RA1, the second magnetic resistance element RA2 and the third magnetic resistance element RA3 which are connected in sequence and extend along the first direction, represent the whole composed of the first to third magnetic resistance elements RA3 extending along the first direction. From the current flow direction, the current enters from the first end of the first magnetic resistance element RA1 along the first direction, and the current is output from the third end of the third magnetic resistance element RA3 along the first direction. It is easy to understand that the extension direction of the first magnetic resistance element RA1 and the third magnetic resistance element RA3 is the first direction. Referring to Figure 12 It is shown that the extension direction of the second magnetic resistance element RA2 is the first direction, and referring to Figure 5 It is shown that the extension direction of the second magnetic resistance element RA2 is the opposite direction of the first direction. From Figure 5 and Figure 12As shown, when the extension direction of the second magnetoresistance element RA2 is the first direction, the wire between the first magnetoresistance element RA1 and the second magnetoresistance element RA2 needs to be bent, which increases the length of the wire and the footprint of the first magnetic detection resistor 101, which is not conducive to miniaturization; when the extension direction of the second magnetoresistance element RA2 is the second direction, the wire between the first magnetoresistance element RA1 and the second magnetoresistance element RA2 is more concise than when the extension direction of the second magnetoresistance element RA2 is the first direction. It needs to be noted that in order to ensure that the voltage value of the output node does not change when the magnetic field direction of the signal magnetic field changes; the extension direction of the second magnetoresistance element RA2 needs to be opposite to the extension direction of the sixth magnetoresistance element RB3.

[0087] The above is an example of the first magnetic detection resistor 101. It is easy to understand that the second magnetic detection resistor 102 to the fourth magnetic detection resistor 104 are similar to the first magnetic detection resistor 101, which will not be described here.

[0088] When the first direction is perpendicular to the second direction, the first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

[0089] In the same state, the same excitation magnetic field is applied to the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104, and the same excitation magnetic field is applied to the second magnetic detection resistor 102 and the third magnetic detection resistor 103. The directions of the excitation magnetic fields at the first magnetic detection resistor 101 and the second magnetic detection resistor 102 are opposite.

[0090] It should be noted that the multiple magnetoresistance elements in the same magnetic detection resistor share an excitation magnetic field. The direction of the excitation magnetic field at each magnetoresistance element and the current direction of the magnetoresistance element affect the deflection angle of the signal magnetization direction at the magnetoresistance element, thereby changing the resistance value of the magnetoresistance element. The change of the resistance values of the first magnetoresistance element RA1 to the twelfth magnetoresistance element RD3 determines the state curve formed by the voltage value of the output node changing with the angle of the signal magnetic field in this state. Different combinations of excitation magnetic field directions and corresponding current directions result in corresponding state curves. Then the angle value of the signal magnetic field is uniquely determined by the first state curve and the second state curve.

[0091] In particular, the direction of the first excitation magnetic field in the first state is perpendicular to the direction of the second excitation magnetic field in the second state; the direction of the first excitation magnetic field in the first state is also perpendicular to the direction of the first excitation magnetic field in the second state.

[0092] The following uses the fourth to seventh embodiments of the present invention as examples. In the fourth to eighth embodiments, the second magnetoresistive element RA2 extends in a direction opposite to the first direction, the fifth magnetoresistive element RB2 extends in a direction opposite to the second direction, the eighth magnetoresistive element RC2 extends in the first direction, and the eleventh magnetoresistive element RD2 extends in the second direction.

[0093] In a fourth embodiment, in the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

[0094] like Figure 13 As shown, Figure 13 Schematic diagram of the magnetic field detection module in the first state of the fourth embodiment. In the first state, the direction of the first excitation magnetic field at the first to third magnetoresistive elements RA1 to RA3, and the tenth to twelfth magnetoresistive elements RD1 to RD3 is the second direction (parallel to the positive direction of the second direction); the direction of the second excitation magnetic field at the fourth to sixth magnetoresistive elements RB1 to RB3, and the seventh to ninth magnetoresistive elements RC1 is the negative direction of the second direction (parallel to the negative direction of the second direction). Figure 8 Show, Figure 8 This is the first state curve of the fourth embodiment; it is recorded as type-1 output curve.

[0095] like Figure 14 Show, Figure 14 Schematic diagram of the magnetic field detection module in the second state of the fourth embodiment. In the second state, the direction of the second excitation magnetic field at the first to third magnetoresistive elements RA1 to RA3, and the tenth to twelfth magnetoresistive elements RD1 to RD3 is the negative direction of the first direction (parallel to the negative direction of the first direction); the direction of the first excitation magnetic field at the fourth to sixth magnetoresistive elements RB1 to RB3, and the seventh to ninth magnetoresistive elements RC1 is the first direction (parallel to the positive direction of the first direction). Figure 15 As shown, Figure 15 This is the second state curve of the fourth embodiment; it is recorded as type-2 output curve.

[0096] Will Figure 8 and Figure 15 Combine and get Figure 9 .Depend on Figure 9It can be known that one region is divided by 90°, 360° can be divided into 4 regions; 0° to 90° is the first region. The angle value of a signal magnetic field can be uniquely determined within 0 to 360° by the values on the first state curve and the second state curve (the voltage value of the output node in the first state and the voltage value of the output node in the second state). And in this embodiment, the angle range region of the signal magnetic field can be determined by the voltage value of the output node in the first state and the voltage value of the output node in the second state.

[0097] In the fifth embodiment of the present application, in the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

[0098] It needs to be explained that the difference between the fifth embodiment and the fourth embodiment is that in the second state, the direction of the first excitation magnetic field and the direction of the second excitation magnetic field; Specifically, the direction of the first excitation magnetic field is 180° different in the first state and the second state, that is, in opposite directions. The same reason applies to the change of the direction of the second excitation magnetic field.

[0099] As shown in Figure 16 , Figure 16 is a schematic diagram of the magnetic field detection module in the second state of the fifth embodiment. In the second state, the direction of the second excitation magnetic field at the first magnetoresistance element RA1 to the third magnetoresistance element RA3 and the tenth magnetoresistance element RD1 to the twelfth magnetoresistance element RD3 is the first direction (parallel to the positive direction of the first direction); The direction of the first excitation magnetic field at the fourth magnetoresistance element RB1 to the sixth magnetoresistance element RB3 and the seventh magnetoresistance element RC1 to the ninth magnetoresistance source is the negative direction of the first direction (parallel to the negative direction of the first direction). As shown in Figure 17 , Figure 17 is the second state curve of the fifth embodiment, which is denoted as type-4 output curve.

[0100] It needs to be explained that referring to Figure 14 and Figure 16 , it can be known that the direction of the excitation magnetic field applied at the first magnetoresistance element RA1 to the twelfth magnetoresistance element RD3 is opposite in the second state of the fourth embodiment and the fifth embodiment. As shown in Figure 15 and Figure 17 , the type-2 output curve and the type-4 output curve are symmetrical about the 0.5 value on the vertical axis.

[0101] will Figure 8 andFigure 17 Combine and get Figure 18 ,Depend on Figure 18 It is also possible to divide an area into 90°, and 360° into 4 areas, so as to uniquely determine the angle value of a signal magnetic field within 0 to 360°.

[0102] In the sixth embodiment of the present invention, in the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

[0103] It should be noted that the sixth embodiment differs from the fourth embodiment in that, in the first state, the direction of the first excitation magnetic field and the direction of the second excitation magnetic field differ by 180° between the first and second states, i.e., they are in opposite directions. The same applies to the direction of the second excitation magnetic field.

[0104] like Figure 19 As shown, Figure 19 Schematic diagram of the magnetic field detection module in the first state of the sixth embodiment. In the first state, the direction of the first excitation magnetic field at the first to third magnetoresistive elements RA1 to RA3, and the tenth to twelfth magnetoresistive elements RD1 to RD3 is the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth to sixth magnetoresistive elements RB1 to RB3, and the seventh to ninth magnetoresistive elements RC1 is the second direction (parallel to the positive direction of the first direction). Figure 20 As shown, Figure 20 This is the first state curve of the sixth embodiment, which is recorded as a type-3 output curve.

[0105] It should be noted that, referring to Figure 13 and Figure 19 It can be seen that the excitation magnetic fields applied to the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 are in opposite directions in the first state of the fourth embodiment and the sixth embodiment. Figure 8 、 Figure 20 and Figure 10 As shown, the type-1 output curve and the type-3 output curve are symmetrical about the 0.5 value on the vertical axis.

[0106] Will Figure 15 and Figure 20 Combine and get Figure 21 , Figure 21A region can also be divided by 90°, and 360° can be divided into 4 regions, so that the angle of a signal magnetic field is uniquely determined within 0 to 360°.

[0107] In the seventh embodiment of the present application, in the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; in the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

[0108] It should be noted that the difference between the seventh embodiment and the fifth embodiment is that the direction of the first excitation magnetic field and the direction of the second excitation magnetic field in the first state. Specifically, the direction of the first excitation magnetic field is 180° different in the first state and the second state, that is, in opposite directions. The same applies to the direction of the second excitation magnetic field.

[0109] As shown in Figure 19 , Figure 19 is a schematic diagram of the magnetic field detection module in the first state of the seventh embodiment. In the first state, the direction of the first excitation magnetic field at the first magnetoresistive element RA1 to the third magnetoresistive element RA3 and the tenth magnetoresistive element RD1 to the twelfth magnetoresistive element RD3 is the negative direction of the second direction (parallel to the negative direction of the second direction); the direction of the second excitation magnetic field at the fourth magnetoresistive element RB1 to the sixth magnetoresistive element RB3 and the seventh magnetoresistive element RC1 to the ninth magnetoresistive source is the second direction (parallel to the positive direction of the first direction). As shown in Figure 20 , Figure 20 Also shown is the first state curve of the seventh embodiment, which is denoted as type-3 output curve.

[0110] It should be noted that referring to Figure 16 and Figure 19 , Figure 16 Also shown is a schematic diagram of the magnetic field detection module in the second state of the seventh embodiment, Figure 19 Also shown is a schematic diagram of the magnetic field detection module in the first state of the seventh embodiment, which shows that the excitation magnetic field applied at the first magnetoresistive element RA1 to the twelfth magnetoresistive element RD3 is in opposite directions in the first state of the fourth embodiment and the sixth embodiment. As shown in Figure 8 and Figure 20 , the type-1 output curve and the type-3 output curve are symmetrical about the 0.5 value on the vertical axis.

[0111] Combining Figure 20 and Figure 17 , we get Figure 22 . Figure 22A region of 90° can divide 360° into 4 regions, and the angle value of a signal magnetic field can be uniquely determined within 0 to 360°.

[0112] The magnetic field sensing module corresponds to form a first output node signal in the first state, and corresponds to form a second output node signal in the second state; the first output node signal and the second output node signal are used to match the sensing direction information of the angle sensor to the numerical interval of 0 degrees to 360 degrees.

[0113] Referring to the fourth embodiment to the seventh embodiment described above, and Figures 8 to 22 The first output node signal is the voltage value of the output node changing with the angle of the signal magnetic field in the first state, and the second output node signal is the voltage value of the output node changing with the angle of the signal magnetic field in the second state. It should be noted that the ordinate of the type-1 output curve to the type-4 output curve is the ratio of the output node voltage value to the supply voltage, and the abscissa is the angle value of the signal magnetic field. The position of the output node voltage value in the type-1 output curve to the type-4 output curve can be easily determined from the output node voltage value in the first state and the second state, and the angle value of the signal magnetic field in the range of 0° to 360° can be uniquely determined.

[0114] The foregoing proposes a magnetic field detection module, which needs to obtain the voltage values of the output nodes in the first state and the second state to determine the direction of the signal magnetic field. The directions of the excitation magnetic fields in the first state and the second state are changed. It should be noted that although the magnetic field detection module can determine the direction of the signal magnetic field, the voltage values of the output nodes need to be obtained twice, and if the direction of the signal magnetic field changes over time, the time interval between the two times of obtaining the output node determines the error degree of the determined angle of the signal magnetic field. Moreover, since the first state needs to be switched to the second state by changing the direction of the excitation magnetic field applied to each magnetic detection resistor, the time for determining the angle of the signal magnetic field is also relatively long, and the angle value of the signal magnetic field cannot be quickly obtained.

[0115] To solve the above problems, the present application further proposes a magnetic field sensing module, as shown in Figures 23 to 29 The magnetic field sensing module comprises: The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104 are connected in series, and the first current direction at the first magnetic detection resistor 101 is arranged at an angle with the second current direction at the second magnetic detection resistor 102; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103, and the third current direction at the third magnetic detection resistor 103 is arranged at an angle with the fourth current direction at the fourth magnetic detection resistor 104; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103; a first output node is formed between the second magnetic detection resistor 102 and the third magnetic detection resistor 103; The fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor are connected in series, and the fifth current direction at the fifth magnetic detection resistor is arranged at an angle with the sixth current direction at the sixth magnetic detection resistor; the sixth current direction at the sixth magnetic detection resistor is arranged at an angle with the seventh current direction at the seventh magnetic detection resistor, and the seventh current direction at the seventh magnetic detection resistor is arranged at an angle with the eighth current direction at the eighth magnetic detection resistor; the sixth current direction at the sixth magnetic detection resistor is arranged at an angle with the seventh current direction at the seventh magnetic detection resistor; a second output node is formed between the sixth magnetic detection resistor and the seventh magnetic detection resistor; The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103, the fourth magnetic detection resistor 104 and the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor are connected in parallel.

[0116] It should be noted that the magnetic field sensing module can be regarded as being combined by two magnetic field detection modules, specifically, the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 constitute a first magnetic field detection module, and the fifth magnetic detection resistor to the eighth magnetic detection resistor constitute a second magnetic detection module. The first magnetic detection module and the second magnetic detection module share the same power supply and ground potential. The first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 constitute the first magnetic field detection module have the beneficial effects as described above, similarly, the fifth magnetic detection resistor to the eighth magnetic detection resistor constitute the second magnetic detection module also have the same beneficial effects, which will not be described here. When there is only a signal magnetic field, the output values of the first magnetic field detection module and the second magnetic field detection module are unchanged.

[0117] Since the first magnetic detection module and the second magnetic detection module share the same power supply and ground potential, the first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103, the fourth magnetic detection resistor 104, the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor are connected in parallel. Specifically, the first end of the first magnetic detection resistor 101 and the second end of the fourth magnetic detection resistor 104 are the head and tail nodes of the first magnetic detection module; the first end of the fifth magnetic detection resistor and the second end of the eighth magnetic detection resistor are the head and tail nodes of the second magnetic detection module. Any one of the head and tail nodes of the first magnetic detection module is connected to the power supply, and the other node is grounded; any one of the head and tail nodes of the second magnetic detection module is connected to the power supply, and the other node is grounded.

[0118] The first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are subjected to a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor 102 and the third magnetic detection resistor 103 are subjected to a signal magnetic field carrying a direction signal and a second excitation magnetic field; the fifth magnetic detection resistor and the eighth magnetic detection resistor are subjected to a signal magnetic field carrying a direction signal and a third excitation magnetic field; the sixth magnetic detection resistor and the seventh magnetic detection resistor are subjected to a signal magnetic field carrying a direction signal and a fourth excitation magnetic field. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, and the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

[0119] It should be noted that in order to solve the problem of needing to obtain the voltage value of the output node twice and being unable to quickly determine the angle value of the signal magnetic field, the first magnetic detection module and the second magnetic detection module constructed by the first magnetic detection resistor 101 to the eighth magnetic detection resistor are used to determine the angle value of the signal magnetic field. Among them, any one of the first magnetic detection module and the second magnetic detection module is in the first state in the above content, and the other magnetic detection module is in the second state; the voltage value at the first output node and the voltage value at the second output node are obtained at the same time, and the angle of the signal magnetic field is directly determined; the time for determining the angle of the signal magnetic field can be reduced, and the angle value of the signal magnetic field can be quickly obtained. In addition, it can also avoid the error of the determined angle of the signal magnetic field caused by the time interval of obtaining the output node twice.

[0120] In order to let any one of the first magnetic detection module and the second magnetic detection module be in the first state in the above content, and the other magnetic detection module be in the second state; the direction of the first excitation magnetic field is not the same as the direction of the third excitation magnetic field.

[0121] It is particularly noted that the various internal structure settings / current direction settings / excitation magnetic field settings of the first magnetic detection module / second magnetic detection module in the first state or in the second state are as shown in the foregoing content, which will not be repeated here.

[0122] In the eighth embodiment of the present application, the first magnetic detection resistor 101 comprises a first magnetic resistance element RA1, a second magnetic resistance element RA2 and a third magnetic resistance element RA3 connected in series in sequence and extending along a first direction; the second magnetic detection resistor 102 comprises a fourth magnetic resistance element RB1, a fifth magnetic resistance element RB2 and a sixth magnetic resistance element RB3 connected in series in sequence and extending along a second direction; the third magnetic detection resistor 103 comprises a seventh magnetic resistance element RC1, an eighth magnetic resistance element RC2 and a ninth magnetic resistance element RC3 connected in series in sequence and extending along the first direction; the fourth magnetic detection resistor 104 comprises a tenth magnetic resistance element RD1, an eleventh magnetic resistance element RD2 and a twelfth magnetic resistance element RD3 connected in series in sequence and extending along the second direction; The fifth magnetic detection resistor comprises a thirteenth magnetic resistance element, a fourteenth magnetic resistance element and a fifteenth magnetic resistance element connected in series in sequence and extending along the first direction; the sixth magnetic detection resistor comprises a sixteenth magnetic resistance element, a seventeenth magnetic resistance element and an eighteenth magnetic resistance element connected in series in sequence and extending along the second direction; the seventh magnetic detection resistor comprises a nineteenth magnetic resistance element, a twentieth magnetic resistance element and a twenty-first magnetic resistance element connected in series in sequence and extending along the first direction; the eighth magnetic detection resistor comprises a twenty-second magnetic resistance element, a twenty-third magnetic resistance element and a twenty-fourth magnetic resistance element connected in series in sequence and extending along the second direction.

[0123] It is noted that the various arrangement modes of the first magnetic detection resistor 101 to the twelfth magnetic detection resistor and the corresponding beneficial effects are as shown in the foregoing content, which will not be repeated here. In addition, the configurations of the thirteenth magnetic detection resistor to the twenty-fourth magnetic detection resistor are similar to those of the first magnetic detection resistor 101 to the twelfth magnetic detection resistor, which are easy to obtain and can have the same arrangement mode and beneficial effects. Therefore, they will not be repeated here.

[0124] In particular, the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field. The ninth embodiment to the twelfth embodiment of the present application are exemplified.

[0125] In the ninth embodiment of the present application, the first excitation magnetic field is parallel to the positive direction of the second direction, the second excitation magnetic field is parallel to the negative direction of the second direction; the third excitation magnetic field is parallel to the negative direction of the first direction, the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

[0126] As shown in Figure 25 , Figure 25 is a schematic diagram of a magnetic field sensing module in the ninth embodiment. The first excitation magnetic field at the first magnetic resistance element RA1 to the third magnetic resistance element RA3, the tenth magnetic resistance element RD1 to the twelfth magnetic resistance element RD3 is the second direction (parallel to the positive direction of the second direction); the fourth magnetic resistance element RB1 to the sixth magnetic resistance element RB3, and the seventh magnetic resistance element RC1 to the ninth magnetic resistance element are in the second direction (parallel to the negative direction of the second direction); the thirteenth magnetic resistance element to the fifteenth magnetic resistance element, the twenty-second magnetic resistance element to the twenty-fourth magnetic resistance element are in the negative direction of the first direction (parallel to the negative direction of the first direction); the sixteenth magnetic resistance element to the twenty-first magnetic resistance element are in the first direction (parallel to the positive direction of the first direction).

[0127] It is easy to obtain that the first magnetic detection module and the second magnetic detection module in the ninth embodiment have the excitation magnetic field relationship in the first state and the second state in the fourth embodiment, respectively. As known from the above content of the fourth embodiment, Figure 26 Two state curves in the ninth embodiment are shown, which are type-1 output curve and type-2 output curve. In the ninth embodiment, the angle value of the signal magnetic field is determined by the voltage value of the first output node and the voltage value of the second output node.

[0128] In the tenth embodiment of the present application, the first excitation magnetic field is parallel to the positive direction of the second direction, the second excitation magnetic field is parallel to the negative direction of the second direction; the third excitation magnetic field is parallel to the positive direction of the first direction, the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

[0129] In this embodiment, as shown in Figure 27 , Figure 27Fig. 10 is a schematic diagram of a magnetic field sensing module in the tenth embodiment. The first excitation magnetic field at the first to third magnetoresistance elements RA1 to RA3, the tenth to twelfth magnetoresistance elements RD1 to RD3 is in the second direction (parallel to the positive direction of the second direction); the fourth to sixth magnetoresistance elements RB1 to RB3, and the seventh to ninth magnetoresistance elements RC1 to RC3 are in the negative direction of the second direction (parallel to the negative direction of the second direction); the thirteenth to fifteenth magnetoresistance elements, the twenty-second to twenty-fourth magnetoresistance elements are in the positive direction of the first direction (parallel to the positive direction of the first direction); and the sixteenth to twenty-first magnetoresistance elements are in the negative direction of the first direction (parallel to the negative direction of the first direction).

[0130] It is easy to obtain that the first magnetic detection module and the second magnetic detection module in the tenth embodiment have the excitation magnetic field relationship in the first state and the second state in the fifth embodiment, respectively. As can be known from the above fifth embodiment, Figure 8 and Figure 17 Two state curves in the tenth embodiment are shown, which are a type-1 output curve and a type-4 output curve, respectively; in combination with Figure 8 and Figure 17 It can be obtained that Figure 28 In the tenth embodiment, the angle value of the signal magnetic field is determined by the voltage value of the first output node and the voltage value of the second output node.

[0131] In the eleventh embodiment of the present application, the first excitation magnetic field is in the negative direction of the second direction, the second excitation magnetic field is in the positive direction of the second direction; the third excitation magnetic field is in the positive direction of the first direction, and the fourth excitation magnetic field is in the negative direction of the first direction, and the first direction is perpendicular to the second direction.

[0132] In the present embodiment, as shown in Figure 29 , the first excitation magnetic field is in the negative direction of the second direction, the second excitation magnetic field is in the positive direction of the second direction; the third excitation magnetic field is in the positive direction of the first direction, and the fourth excitation magnetic field is in the negative direction of the first direction, and the first direction is perpendicular to the second direction. Figure 29is a schematic diagram of the magnetic field sensing module in the eleventh embodiment. The first excitation magnetic field at the first magnetoresistance element RA1 to the third magnetoresistance element RA3, the tenth magnetoresistance element RD1 to the twelfth magnetoresistance element RD3 is in the negative direction of the second direction (parallel to the negative direction of the second direction); the second excitation magnetic field at the fourth magnetoresistance element RB1 to the sixth magnetoresistance element RB3, and the seventh magnetoresistance element RC1 to the ninth magnetoresistance element is in the second direction (parallel to the positive direction of the second direction); the third excitation magnetic field at the thirteenth magnetoresistance element to the fifteenth magnetoresistance element, the twenty-second magnetoresistance element to the twenty-fourth magnetoresistance element is in the first direction (parallel to the positive direction of the first direction); and the fourth excitation magnetic field at the sixteenth magnetoresistance element to the twenty-first magnetoresistance element is in the negative direction of the first direction (parallel to the negative direction of the first direction).

[0133] It is easy to obtain that the first magnetic detection module and the second magnetic detection module in the eleventh embodiment have the excitation magnetic field relationship in the first state and the second state in the sixth embodiment, respectively. As can be known from the above content of the sixth embodiment, Figure 20 and Figure 15 Two state curves in the tenth embodiment are shown, which are a type-3 output curve and a type-2 output curve, respectively; in combination with Figure 20 and Figure 15 It can be obtained that Figure 21 In the eleventh embodiment, the angle value of the signal magnetic field is determined by the voltage value of the first output node and the voltage value of the second output node.

[0134] In the twelfth embodiment of the present application, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

[0135] In the present embodiment, in the present embodiment, in the present embodiment, as shown in Figure 30 Figure 30 ​is a schematic diagram of a magnetic field sensing module in the twelfth embodiment. The first excitation magnetic field at the first magnetoresistance element RA1 to the third magnetoresistance element RA3, the tenth magnetoresistance element RD1 to the twelfth magnetoresistance element RD3 is in the negative direction of the second direction (parallel to the negative direction of the second direction); the second excitation magnetic field at the fourth magnetoresistance element RB1 to the sixth magnetoresistance element RB3, and the seventh magnetoresistance element RC1 to the ninth magnetoresistance element is in the second direction (parallel to the positive direction of the second direction); the third excitation magnetic field at the thirteenth magnetoresistance element to the fifteenth magnetoresistance element, the twenty-second magnetoresistance element to the twenty-fourth magnetoresistance element is in the negative direction of the first direction (parallel to the negative direction of the first direction); and the fourth excitation magnetic field at the sixteenth magnetoresistance element to the twenty-first magnetoresistance element is in the first direction (parallel to the positive direction of the first direction).

[0136] It is easy to obtain that the first magnetic detection module and the second magnetic detection module in the twelfth embodiment have the excitation magnetic field relationship in the first state and the second state in the seventh embodiment, respectively. Figure 17 and Figure 20 Two state curves in the tenth embodiment are shown, which are a type-4 output curve and a type-3 output curve, respectively. Figure 17 and Figure 20 It can be obtained that Figure 22 In the twelfth embodiment, the angle value of the signal magnetic field is determined by the voltage value of the first output node and the voltage value of the second output node.

[0137] The application further provides a magnetic field detection module, as shown in Figure 31 The magnetic field detection module comprises: The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103, and the fourth magnetic detection resistor 104 are connected in series, and the first current direction at the first magnetic detection resistor 101 is arranged at an angle with the second current direction at the second magnetic detection resistor 102; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103, and the third current direction at the third magnetic detection resistor 103 is arranged at an angle with the fourth current direction at the fourth magnetic detection resistor 104; the second current direction at the second magnetic detection resistor 102 is arranged at an angle with the third current direction at the third magnetic detection resistor 103; and the first output node is formed between the second magnetic detection resistor 102 and the third magnetic detection resistor 103. The fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor are connected in series, and the fifth current direction at the fifth magnetic detection resistor and the sixth current direction at the sixth magnetic detection resistor are arranged at an angle; the sixth current direction at the sixth magnetic detection resistor and the seventh current direction at the seventh magnetic detection resistor are arranged at an angle, and the seventh current direction at the seventh magnetic detection resistor and the eighth current direction at the eighth magnetic detection resistor are arranged at an angle; the sixth current direction at the sixth magnetic detection resistor and the seventh current direction at the seventh magnetic detection resistor are arranged at an angle; a second output node is formed between the sixth magnetic detection resistor and the seventh magnetic detection resistor; The first magnetic detection resistor 101, the second magnetic detection resistor 102, the third magnetic detection resistor 103 and the fourth magnetic detection resistor 104 are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor and the eighth magnetic detection resistor. The first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are applied with a signal magnetic field carrying a direction signal and a first excitation magnetic field; the second magnetic detection resistor 102 and the third magnetic detection resistor 103 are applied with a signal magnetic field carrying a direction signal and a second excitation magnetic field; the fifth magnetic detection resistor and the eighth magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a third excitation magnetic field; the sixth magnetic detection resistor and the seventh magnetic detection resistor are applied with a signal magnetic field carrying a direction signal and a fourth excitation magnetic field. The direction of the first excitation magnetic field and the direction of the second excitation magnetic field are opposite, the direction of the third excitation magnetic field and the direction of the fourth excitation magnetic field are opposite, and the direction of the first excitation magnetic field and the direction of the third excitation magnetic field are opposite.

[0138] It should be noted that the direction of the first excitation magnetic field and the direction of the third excitation magnetic field are opposite. Because the magnetic field intensity of each excitation magnetic field is equal, the third excitation magnetic field is the same as the second excitation magnetic field, and the fourth excitation magnetic field is the same as the first excitation magnetic field.

[0139] Therefore, the magnetic field excited at the first magnetic detection resistor 101 to the eighth magnetic detection resistor can be represented as follows: the signal magnetic field carrying the direction signal and the first excited magnetic field are applied at the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104; the signal magnetic field carrying the direction signal and the second excited magnetic field are applied at the second magnetic detection resistor 102 and the third magnetic detection resistor 103; the signal magnetic field carrying the direction signal and the second excited magnetic field are applied at the fifth magnetic detection resistor and the eighth magnetic detection resistor; and the signal magnetic field carrying the direction signal and the first excited magnetic field are applied at the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excited magnetic field is opposite to that of the second excited magnetic field.

[0140] It should be noted that the first magnetic detection resistor 101 to the fourth magnetic detection resistor 104 are connected in series, and the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 are the head and tail nodes; the fifth magnetic detection resistor to the eighth magnetic detection resistor are connected in series, and the fifth magnetic detection resistor and the eighth magnetic detection resistor are the head and tail nodes. The excited magnetic field at the first magnetic detection resistor 101 and the fourth magnetic detection resistor 104 is opposite to that of the fifth magnetic detection resistor and the eighth magnetic detection resistor. It is easy to obtain that, under the condition of sharing the same power supply and the same ground potential, no matter which two head and tail nodes (the first magnetic detection resistor 101 and the fifth magnetic detection resistor, the first magnetic detection resistor 101 and the eighth magnetic detection resistor, the fourth magnetic detection resistor 104 and the fifth magnetic detection resistor, and the fourth magnetic detection resistor 104 and the eighth magnetic detection resistor) are connected to the power supply, the state curve of the first output node is symmetrical about the vertical axis 0.5 value with the state curve of the second output node. It is easy to obtain that the voltage value at the first output node and the voltage value at the second output node are symmetrical about the vertical axis 0.5 value. symmetrical, The supply voltage is the supply voltage. Subtracting the voltage value at the first output node from the voltage value at the second output node, the first subtraction output curve is obtained, and the state curve is converted (by dividing the voltage value of the first subtraction output curve by the supply voltage, and constructing the state curve by using the ratio value). Compared with the state curve of the first output node and the state curve of the second output node, the state curve has the advantage of signal peak-peak value improvement. Higher signal peak-peak value means that the amplitude of the signal is larger. For weak signals, improving the signal peak-peak value can make it easier to be detected and complete the subsequent judgment.

[0141] The thirteenth and fourteenth embodiments of the application are taken as examples.

[0142] In the thirteenth embodiment of the present application, the first magnetic detection resistor 101 comprises a first magnetic resistance element RA1, a second magnetic resistance element RA2 and a third magnetic resistance element RA3 connected in series and extending along a first direction; the second magnetic detection resistor 102 comprises a fourth magnetic resistance element RB1, a fifth magnetic resistance element RB2 and a sixth magnetic resistance element RB3 connected in series and extending along a second direction; the third magnetic detection resistor 103 comprises a seventh magnetic resistance element RC1, an eighth magnetic resistance element RC2 and a ninth magnetic resistance element RC3 connected in series and extending along the first direction; and the fourth magnetic detection resistor 104 comprises a tenth magnetic resistance element RD1, an eleventh magnetic resistance element RD2 and a twelfth magnetic resistance element RD3 connected in series and extending along the second direction.

[0143] The fifth magnetic detection resistor comprises a thirteenth magnetic resistance element, a fourteenth magnetic resistance element and a fifteenth magnetic resistance element connected in series and extending along the first direction; the sixth magnetic detection resistor comprises a sixteenth magnetic resistance element, a seventeenth magnetic resistance element and an eighteenth magnetic resistance element connected in series and extending along the second direction; the seventh magnetic detection resistor comprises a nineteenth magnetic resistance element, a twentieth magnetic resistance element and a twenty-first magnetic resistance element connected in series and extending along the first direction; and the eighth magnetic detection resistor comprises a twenty-second magnetic resistance element, a twenty-third magnetic resistance element and a twenty-fourth magnetic resistance element connected in series and extending along the second direction. The first direction is perpendicular to the second direction.

[0144] As shown in Figure 32 When the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, the direction of the first excitation magnetic field at the first magnetic resistance element RA1 to the third magnetic resistance element RA3, the tenth magnetic resistance element RD1 to the twelfth magnetic resistance element RD3 and the sixteenth magnetic resistance element to the twenty-first magnetic resistance element is parallel to the positive direction of the second direction. The direction of the second excitation magnetic field at the fourth magnetic resistance element RB1 to the ninth magnetic resistance element RC3, the thirteenth magnetic resistance element to the fifteenth magnetic resistance element and the twenty-second magnetic resistance element to the twenty-fourth magnetic resistance element is parallel to the negative direction of the second direction.

[0145] It should be noted that the arrows MF1 to MF8 in the drawings represent the directions of the excitation magnetic fields at the first magnetic detection resistor 101 to the eighth magnetic detection resistor.

[0146] As shown in Figure 20 and Figure 8 As shown in Figure 8 is a state curve at the first output node, Figure 20 is a state curve at the second output node.

[0147] In combination with Figure 8 and Figure 20According to the state curve at the first output node and the state curve at the second output node, a first subtracted output curve is obtained, and then converted into a state curve, as shown in Figure 33

[0148] It should be noted that the state curve at the first output node (corresponding to Type-1) in this embodiment is subtracted from the state curve at the second output node (corresponding to Type-3) to obtain a first subtracted output curve, which is converted into a state curve (as shown in Type-5). If the state curve at the second output node (corresponding to Type-3) in this embodiment is subtracted from the state curve at the first output node (corresponding to Type-1), the obtained state curve is identified as state curve Type-7. The state curve Type-5 and the state curve Type-7 are symmetric about the value 0.5 of the vertical axis.

[0149] In the fourteenth embodiment of the present application, the first magnetic detection resistor 101 includes a first magnetic resistance element RA1, a second magnetic resistance element RA2 and a third magnetic resistance element RA3 connected in series and extending along a first direction; the second magnetic detection resistor 102 includes a fourth magnetic resistance element RB1, a fifth magnetic resistance element RB2 and a sixth magnetic resistance element RB3 connected in series and extending along a second direction; the third magnetic detection resistor 103 includes a seventh magnetic resistance element RC1, an eighth magnetic resistance element RC2 and a ninth magnetic resistance element RC3 connected in series and extending along the first direction; and the fourth magnetic detection resistor 104 includes a tenth magnetic resistance element RD1, an eleventh magnetic resistance element RD2 and a twelfth magnetic resistance element RD3 connected in series and extending along the second direction.

[0150] The fifth magnetic detection resistor includes a thirteenth magnetic resistance element, a fourteenth magnetic resistance element and a fifteenth magnetic resistance element connected in series and extending along the first direction; the sixth magnetic detection resistor includes a sixteenth magnetic resistance element, a seventeenth magnetic resistance element and an eighteenth magnetic resistance element connected in series and extending along the second direction; the seventh magnetic detection resistor includes a nineteenth magnetic resistance element, a twentieth magnetic resistance element and a twenty-first magnetic resistance element connected in series and extending along the first direction; and the eighth magnetic detection resistor includes a twenty-second magnetic resistance element, a twenty-third magnetic resistance element and a twenty-fourth magnetic resistance element connected in series and extending along the second direction. The first direction is perpendicular to the second direction.

[0151] As Figure 34 ​As shown, when the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, the direction of the first excitation magnetic field at the first magnetoresistance element RA1 to the third magnetoresistance element RA3, the tenth magnetoresistance element RD1 to the twelfth magnetoresistance element RD3, the sixteenth magnetoresistance element to the twenty-first magnetoresistance element is parallel to the positive direction of the first direction. The direction of the second excitation magnetic field at the fourth magnetoresistance element RB1 to the ninth magnetoresistance element RC3, the thirteenth magnetoresistance element to the fifteenth magnetoresistance element, the twenty-second magnetoresistance element to the twenty-fourth magnetoresistance element is parallel to the negative direction of the first direction.

[0152] As shown in Figure 17 and Figure 15 , the state curve at the first output node is Figure 17 , and the state curve at the second output node is Figure 15 .

[0153] According to the state curve at the first output node and the state curve at the second output node, the second subtraction output curve is obtained, and then it is converted into a state curve, as shown in Figure 15 . Figure 17 Figure 35 It should be noted that the state curve at the second output node in this embodiment (corresponding to Type-2) is subtracted from the state curve at the first output node (corresponding to Type-4) to obtain the second subtraction output curve, which is converted into a state curve (as shown in Type-6). If the state curve at the first output node in this embodiment (corresponding to Type-4) is subtracted from the state curve at the second output node (corresponding to Type-2), the obtained state curve is identified as the state curve Type-8. The state curve Type-6 and the state curve Type-8 are symmetric about the vertical axis 0.5 value.

[0154] It should be noted that the direction of the first excitation magnetic field in the thirteenth embodiment and the direction of the first excitation magnetic field in the fourteenth embodiment are perpendicular to each other. The angle of the signal magnetic field can be determined by the Type-5 curve in and the Type-6 curve in

[0155] . Figure 33 Figure 35 The magnetic field detection module further comprises:

[0156] The magnetic field detection module further comprises: ​a ninth magnetic detection resistor, a tenth magnetic detection resistor, an eleventh magnetic detection resistor and a twelfth magnetic detection resistor are connected in series, a ninth current direction at the ninth magnetic detection resistor is arranged at an angle with a tenth current direction at the tenth magnetic detection resistor; the tenth current direction at the tenth magnetic detection resistor is arranged at an angle with an eleventh current direction at the eleventh magnetic detection resistor, the eleventh current direction at the eleventh magnetic detection resistor is arranged at an angle with a twelfth current direction at the twelfth magnetic detection resistor; the tenth current direction at the tenth magnetic detection resistor is arranged at an angle with the eleventh current direction at the eleventh magnetic detection resistor; a third output node is formed between the tenth magnetic detection resistor and the eleventh magnetic detection resistor; a thirteenth magnetic detection resistor, a fourteenth magnetic detection resistor, a fifteenth magnetic detection resistor and a sixteenth magnetic detection resistor are connected in series, a thirteenth current direction at the thirteenth magnetic detection resistor is arranged at an angle with a fourteenth current direction at the fourteenth magnetic detection resistor; the fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle with a fifteenth current direction at the fifteenth magnetic detection resistor, the fifteenth current direction at the fifteenth magnetic detection resistor is arranged at an angle with a sixteenth current direction at the sixteenth magnetic detection resistor; the fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle with the fifteenth current direction at the fifteenth magnetic detection resistor; a fourth output node is formed between the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor; the ninth magnetic detection resistor, the tenth magnetic detection resistor, the eleventh magnetic detection resistor, the twelfth magnetic detection resistor, the thirteenth magnetic detection resistor, the fourteenth magnetic detection resistor, the fifteenth magnetic detection resistor and the sixteenth magnetic detection resistor are connected in parallel; a signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth magnetic detection resistor and the twelfth magnetic detection resistor; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth magnetic detection resistor and the eleventh magnetic detection resistor; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth magnetic detection resistor and the sixteenth magnetic detection resistor; a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor; the direction of the fifth excitation magnetic field and the direction of the sixth excitation magnetic field are opposite, the direction of the seventh excitation magnetic field and the direction of the eighth excitation magnetic field are opposite, the direction of the fifth excitation magnetic field and the direction of the seventh excitation magnetic field are opposite; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

[0157] It is to be noted that the direction of the fifth excitation magnetic field is opposite to the direction of the seventh excitation magnetic field. The structure and advantages of the first magnetic detection resistor 101 to the eighth magnetic detection resistor are as described above, and similarly, the structure and advantages of the ninth magnetic detection resistor to the sixteenth magnetic detection resistor are the same, and will not be described again here. In the structure composed of the ninth magnetic detection resistor to the sixteenth magnetic detection resistor, the second subtraction output curve can be obtained according to the state curve at the third output node and the state curve at the fourth output node, and then converted into a state curve.

[0158] As shown in Figure 31 The ninth magnetic detection resistor comprises a twenty-fifth magnetic resistance element, a twenty-sixth magnetic resistance element and a twenty-seventh magnetic resistance element connected in series and extending along the first direction; the tenth magnetic detection resistor comprises a twenty-eighth magnetic resistance element, a twenty-ninth magnetic resistance element and a thirtieth magnetic resistance element connected in series and extending along the second direction; the eleventh magnetic detection resistor comprises a thirty-first magnetic resistance element, a thirty-second magnetic resistance element and a thirty-third magnetic resistance element connected in series and extending along the first direction; the twelfth magnetic detection resistor comprises a thirty-fourth magnetic resistance element, a thirty-fifth magnetic resistance element and a thirty-sixth magnetic resistance element connected in series and extending along the second direction; The thirteenth magnetic detection resistor comprises a thirty-seventh magnetic resistance element, a thirty-eighth magnetic resistance element and a thirty-ninth magnetic resistance element connected in series and extending along the first direction; the fourteenth magnetic detection resistor comprises a fortieth magnetic resistance element, a forty-first magnetic resistance element and a forty-second magnetic resistance element connected in series and extending along the second direction; the fifteenth magnetic detection resistor comprises a forty-third magnetic resistance element, a forty-fourth magnetic resistance element and a forty-fifth magnetic resistance element connected in series and extending along the first direction; the sixteenth magnetic detection resistor comprises a forty-sixth magnetic resistance element, a forty-seventh magnetic resistance element and a forty-eighth magnetic resistance element connected in series and extending along the second direction.

[0159] It is to be noted that the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field. Refer to the contents described in the thirteenth embodiment and the fourteenth embodiment. The direction of the first excitation magnetic field in the thirteenth embodiment and the direction of the first excitation magnetic field in the fourteenth embodiment are perpendicular to each other. In the magnetic field detection module proposed by the present application, when either the direction of the first excitation magnetic field or the direction of the fifth excitation magnetic field is the positive direction of the second direction, and the other is the positive direction of the first direction, the angle of the signal magnetic field can be determined through Figure 33 the Type-5 curve in FIG. 5 and Figure 35 the Type-6 curve in FIG. 6. It is easy to understand that the Type-5 curve and the Type-6 curve can be plotted in the same figure.

[0160] Based on the above concept, the Type-5 curve and the Type-7 curve are symmetrical about the longitudinal axis 0.5 value, and the Type-6 curve and the Type-8 curve are symmetrical about the longitudinal axis 0.5 value. In the following scenarios, the angle of the signal magnetic field can also be determined.

[0161] I. Draw the Type-5 curve and the Type-6 curve in the same graph.

[0162] II. Draw the Type-7 curve and the Type-6 curve in the same graph.

[0163] III. Draw the Type-5 curve and the Type-8 curve in the same graph.

[0164] IV. Draw the Type-7 curve and the Type-8 curve in the same graph.

[0165] The magnetic field detection module proposed in the application obtains a state curve with improved signal peak-to-peak value by subtracting two state curves symmetrical about the longitudinal axis 0.5 value, so that it is easier to be detected; and then determines the angle value of the signal magnetic field through two state curves with improved signal peak-to-peak value (the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field), which can improve the success rate of recognition and judgment.

[0166] It should be noted that the first to eighth magnetic detection resistors and the ninth to tenth magnetic detection resistors share the same power supply and ground potential.

[0167] The application further proposes a magnetic sensor, which comprises the magnetic field detection module, or comprises the magnetic field sensing module, or comprises the magnetic field detection module.

[0168] The specific structure and beneficial effects of the magnetic field detection module, the magnetic field sensing module and the magnetic field detection module have been described above and will not be repeated here. Since the magnetic sensor adopts all the technical solutions of the above-mentioned embodiments, it at least has all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here.

[0169] The above-mentioned is only an optional embodiment of the application, and does not limit the scope of the application. Any equivalent structural transformation made by using the content of the application specification and drawings, or direct / indirect application in other related technical fields within the inventive concept of the application is included in the protection scope of the application.

Claims

1. A magnetic field detection module, characterized in that: The magnetic field detection module includes: a first magnetic detection resistor, a second magnetic detection resistor, a third magnetic detection resistor, and a fourth magnetic detection resistor connected in series, wherein a first current direction at the first magnetic detection resistor is arranged at an angle to a second current direction at the second magnetic detection resistor; a second current direction at the second magnetic detection resistor is arranged at an angle to a third current direction at the third magnetic detection resistor; a third current direction at the third magnetic detection resistor is arranged at an angle to a fourth current direction at the fourth magnetic detection resistor; a second current direction at the second magnetic detection resistor is arranged at an angle to the third current direction at the third magnetic detection resistor; and an output node is formed between the second magnetic detection resistor and the third magnetic detection resistor; In a first state, a signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; In the second state, a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and the first excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; In the same state, the direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field.

2. The magnetic field detection module according to claim 1, wherein: The first magnetic detection resistor includes a first magnetic resistance element, a second magnetic resistance element, and a third magnetic resistance element connected in series and extending in a first direction; the second magnetic detection resistor includes a fourth magnetic resistance element, a fifth magnetic resistance element, and a sixth magnetic resistance element connected in series and extending in a second direction; the third magnetic detection resistor includes a seventh magnetic resistance element, an eighth magnetic resistance element, and a ninth magnetic resistance element connected in series and extending in a direction opposite to the first direction; and the fourth magnetic detection resistor includes a tenth magnetic resistance element, an eleventh magnetic resistance element, and a twelfth magnetic resistance element connected in series and extending in a direction opposite to the second direction.

3. The magnetic field detection module according to claim 2, wherein: In the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

4. The magnetic field detection module according to claim 2, wherein: In the first state, the direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

5. The magnetic field detection module according to claim 2, wherein: In the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the first direction; the first direction is perpendicular to the second direction.

6. The magnetic field detection module according to claim 2, wherein: In the first state, the direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; In the second state, the direction of the first excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the first direction; the first direction is perpendicular to the second direction.

7. The magnetic field detection module according to claim 1, wherein: The first current direction is perpendicular to the second current direction, the second current direction is perpendicular to the third current direction, the third current direction is perpendicular to the fourth current direction, the first current direction is opposite to the third current direction, and the second current direction is opposite to the fourth current direction.

8. The magnetic field detection module according to any one of claims 1 to 7, wherein: The magnetic field detection module forms a first output node signal in the first state and forms a second output node signal in the second state; the first output node signal and the second output node signal are used to match the magnetic field detection range to a numerical range of 0 degrees to 360 degrees.

9. A magnetic field sensing module, characterized in that: The magnetic field sensing module includes: a first magnetic detection resistor, a second magnetic detection resistor, a third magnetic detection resistor, and a fourth magnetic detection resistor connected in series, wherein a first current direction at the first magnetic detection resistor is arranged at an angle to a second current direction at the second magnetic detection resistor; a second current direction at the second magnetic detection resistor is arranged at an angle to a third current direction at the third magnetic detection resistor; and a third current direction at the third magnetic detection resistor is arranged at an angle to a fourth current direction at the fourth magnetic detection resistor; and the second current direction at the second magnetic detection resistor is arranged at an angle to the third current direction at the third magnetic detection resistor; and a first output node is formed between the second magnetic detection resistor and the third magnetic detection resistor. a fifth magnetic detection resistor, a sixth magnetic detection resistor, a seventh magnetic detection resistor, and an eighth magnetic detection resistor connected in series, wherein a fifth current direction at the fifth magnetic detection resistor is arranged at an angle to a sixth current direction at the sixth magnetic detection resistor; a sixth current direction at the sixth magnetic detection resistor is arranged at an angle to a seventh current direction at the seventh magnetic detection resistor; a seventh current direction at the seventh magnetic detection resistor is arranged at an angle to the eighth current direction at the eighth magnetic detection resistor; and a sixth current direction at the sixth magnetic detection resistor is arranged at an angle to the seventh current direction at the seventh magnetic detection resistor; and a second output node is formed between the sixth magnetic detection resistor and the seventh magnetic detection resistor. The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, and the fourth magnetic detection resistor are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor; A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; and a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is perpendicular to the direction of the third excitation magnetic field.

10. The magnetic field sensing module according to claim 9, wherein: The first magnetic detection resistor includes a first magnetic resistance element, a second magnetic resistance element, and a third magnetic resistance element connected in series and extending in a first direction; the second magnetic detection resistor includes a fourth magnetic resistance element, a fifth magnetic resistance element, and a sixth magnetic resistance element connected in series and extending in a second direction; the third magnetic detection resistor includes a seventh magnetic resistance element, an eighth magnetic resistance element, and a ninth magnetic resistance element connected in series and extending in the first direction; and the fourth magnetic detection resistor includes a tenth magnetic resistance element, an eleventh magnetic resistance element, and a twelfth magnetic resistance element connected in series and extending in the second direction; The fifth magnetic detection resistor includes a thirteenth magnetic resistance element, a fourteenth magnetic resistance element, and a fifteenth magnetic resistance element connected in series and extending in the first direction. The sixth magnetic detection resistor includes a sixteenth magnetic resistance element, a seventeenth magnetic resistance element, and an eighteenth magnetic resistance element connected in series and extending in the second direction. The seventh magnetic detection resistor includes a nineteenth magnetic resistance element, a twentieth magnetic resistance element, and a twenty-first magnetic resistance element connected in series and extending in the first direction. The eighth magnetic detection resistor includes a twenty-second magnetic resistance element, a twenty-third magnetic resistance element, and a twenty-fourth magnetic resistance element connected in series and extending in the second direction.

11. The magnetic field sensing module according to claim 10, wherein: The direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

12. The magnetic field sensing module according to claim 10, wherein: The direction of the first excitation magnetic field is parallel to the positive direction of the second direction, and the direction of the second excitation magnetic field is parallel to the negative direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

13. The magnetic field sensing module according to claim 10, wherein: The direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the positive direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the negative direction of the first direction, and the first direction is perpendicular to the second direction.

14. The magnetic field sensing module according to claim 10, wherein: The direction of the first excitation magnetic field is parallel to the negative direction of the second direction, and the direction of the second excitation magnetic field is parallel to the positive direction of the second direction; the direction of the third excitation magnetic field is parallel to the negative direction of the first direction, and the direction of the fourth excitation magnetic field is parallel to the positive direction of the first direction, and the first direction is perpendicular to the second direction.

15. A magnetic field detection module, characterized in that: The magnetic field detection module includes: a first magnetic detection resistor, a second magnetic detection resistor, a third magnetic detection resistor, and a fourth magnetic detection resistor connected in series, wherein a first current direction at the first magnetic detection resistor is arranged at an angle to a second current direction at the second magnetic detection resistor; a second current direction at the second magnetic detection resistor is arranged at an angle to a third current direction at the third magnetic detection resistor; and a third current direction at the third magnetic detection resistor is arranged at an angle to a fourth current direction at the fourth magnetic detection resistor; and the second current direction at the second magnetic detection resistor is arranged at an angle to the third current direction at the third magnetic detection resistor; and a first output node is formed between the second magnetic detection resistor and the third magnetic detection resistor. a fifth magnetic detection resistor, a sixth magnetic detection resistor, a seventh magnetic detection resistor, and an eighth magnetic detection resistor connected in series, wherein a fifth current direction at the fifth magnetic detection resistor is arranged at an angle to a sixth current direction at the sixth magnetic detection resistor; a sixth current direction at the sixth magnetic detection resistor is arranged at an angle to a seventh current direction at the seventh magnetic detection resistor; a seventh current direction at the seventh magnetic detection resistor is arranged at an angle to the eighth current direction at the eighth magnetic detection resistor; and a sixth current direction at the sixth magnetic detection resistor is arranged at an angle to the seventh current direction at the seventh magnetic detection resistor; and a second output node is formed between the sixth magnetic detection resistor and the seventh magnetic detection resistor. The first magnetic detection resistor, the second magnetic detection resistor, the third magnetic detection resistor, and the fourth magnetic detection resistor are connected in parallel with the fifth magnetic detection resistor, the sixth magnetic detection resistor, the seventh magnetic detection resistor, and the eighth magnetic detection resistor; A signal magnetic field carrying a direction signal and a first excitation magnetic field are applied to the first magnetic detection resistor and the fourth magnetic detection resistor; a signal magnetic field carrying a direction signal and a second excitation magnetic field are applied to the second magnetic detection resistor and the third magnetic detection resistor; a signal magnetic field carrying a direction signal and a third excitation magnetic field are applied to the fifth magnetic detection resistor and the eighth magnetic detection resistor; and a signal magnetic field carrying a direction signal and a fourth excitation magnetic field are applied to the sixth magnetic detection resistor and the seventh magnetic detection resistor. The direction of the first excitation magnetic field is opposite to the direction of the second excitation magnetic field, the direction of the third excitation magnetic field is opposite to the direction of the fourth excitation magnetic field, and the direction of the first excitation magnetic field is opposite to the direction of the third excitation magnetic field; The magnetic field detection module also includes: a ninth magnetic detection resistor, a tenth magnetic detection resistor, an eleventh magnetic detection resistor, and a twelfth magnetic detection resistor connected in series, wherein a ninth current direction at the ninth magnetic detection resistor is arranged at an angle to a tenth current direction at the tenth magnetic detection resistor; a tenth current direction at the tenth magnetic detection resistor is arranged at an angle to an eleventh current direction at the eleventh magnetic detection resistor; a tenth current direction at the eleventh magnetic detection resistor is arranged at an angle to the twelfth current direction at the twelfth magnetic detection resistor; and a tenth current direction at the tenth magnetic detection resistor is arranged at an angle to the eleventh current direction at the eleventh magnetic detection resistor; and a third output node is formed between the tenth magnetic detection resistor and the eleventh magnetic detection resistor. a thirteenth magnetic detection resistor, a fourteenth magnetic detection resistor, a fifteenth magnetic detection resistor, and a sixteenth magnetic detection resistor connected in series, wherein a thirteenth current direction at the thirteenth magnetic detection resistor is arranged at an angle to a fourteenth current direction at the fourteenth magnetic detection resistor; a fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle to a fifteenth current direction at the fifteenth magnetic detection resistor; a fifteenth current direction at the fifteenth magnetic detection resistor is arranged at an angle to the sixteenth current direction at the sixteenth magnetic detection resistor; a fourteenth current direction at the fourteenth magnetic detection resistor is arranged at an angle to the fifteenth current direction at the fifteenth magnetic detection resistor; and a fourth output node is formed between the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor. The ninth magnetic detection resistor, the tenth magnetic detection resistor, the eleventh magnetic detection resistor, and the twelfth magnetic detection resistor are connected in parallel with the thirteenth magnetic detection resistor, the fourteenth magnetic detection resistor, the fifteenth magnetic detection resistor, and the sixteenth magnetic detection resistor; A signal magnetic field carrying a direction signal and a fifth excitation magnetic field are applied to the ninth magnetic detection resistor and the twelfth magnetic detection resistor; a signal magnetic field carrying a direction signal and a sixth excitation magnetic field are applied to the tenth magnetic detection resistor and the eleventh magnetic detection resistor; a signal magnetic field carrying a direction signal and a seventh excitation magnetic field are applied to the thirteenth magnetic detection resistor and the sixteenth magnetic detection resistor; and a signal magnetic field carrying a direction signal and an eighth excitation magnetic field are applied to the fourteenth magnetic detection resistor and the fifteenth magnetic detection resistor. The direction of the fifth excitation magnetic field is opposite to the direction of the sixth excitation magnetic field, the direction of the seventh excitation magnetic field is opposite to the direction of the eighth excitation magnetic field, and the direction of the fifth excitation magnetic field is opposite to the direction of the seventh excitation magnetic field; the direction of the first excitation magnetic field is perpendicular to the direction of the fifth excitation magnetic field.

16. A magnetic sensor, characterized in that: The magnetic sensor includes the magnetic field detection module according to any one of claims 1 to 8, or includes the magnetic field sensing module according to any one of claims 9 to 14, or includes the magnetic field detection module according to claim 15.

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