Guide hole layer layout and guide hole layer auxiliary pattern adding method
By adding and extending auxiliary patterns to the via patterns in sparse regions, the problem of not being able to add auxiliary patterns to patterns with low priority is solved, the process window and depth of focus are improved, and the transfer accuracy of via patterns during photolithography is enhanced.
Patent Information
- Application Number
- CN202510691825.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-27
- Publication Date
- 2025-10-17
AI Technical Summary
In integrated circuit layout design, sparse patterns with low priority cannot be added because high priority patterns occupy auxiliary pattern positions, resulting in a reduction in process window and depth of focus, and insufficient accuracy of via pattern transfer during photolithography.
By filtering out the guide hole patterns in the sparse region, the target patterns are determined and their priority is arranged. A first auxiliary pattern is added, and its ends are extended to add a second auxiliary pattern between patterns with lower priority, ensuring that auxiliary patterns can be added to all patterns.
The process window and focal depth of the guide hole pattern are improved, and the pattern transfer accuracy during lithography is enhanced.
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Figure CN120802568A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor, in particular to a via layer layout and a via layer auxiliary pattern adding method. BACKGROUND
[0002] Lithography is one of the most complex technologies and the driving force behind the development of integrated circuit manufacturing processes. Lithography is the process of transferring the design of an integrated circuit from a mask onto a silicon wafer using a photolithography machine. It involves using a light source to transfer a specific pattern through a mask onto a silicon wafer or other substrate that has been coated with photoresist. The lithography process usually includes steps such as coating photoresist, exposure, development, and etching.
[0003] In the layout design of integrated circuits, such as contact hole patterns or via layer patterns, there are both dense patterns and sparse patterns. Usually, some small patterns are added around the sparse patterns to change the sparse patterns into dense patterns in terms of optical angles, thereby increasing the light incidence rate to improve the depth of focus and process window uniformity of the lithography process. The added patterns are called sub-resolution auxiliary patterns, simply referred to as auxiliary patterns. In the design layout of logic circuits, there are various patterns, and the sub-resolution auxiliary patterns may conflict. In this case, the patterns are divided into different priority orders, and the sub-resolution auxiliary patterns are added in priority order. However, in this way, the sparse patterns with low priority order cannot add auxiliary patterns, thereby reducing the process window of the patterns.
[0004] It should be noted that the information disclosed in the background section of the present application is only intended to deepen the understanding of the general background of the present application, and should not be regarded as acknowledging or implying in any form that the information constitutes prior art known to those skilled in the art. SUMMARY
[0005] The present application aims to provide a via layer layout and a via layer auxiliary pattern adding method to solve the problem that after the sparse patterns with high priority order add auxiliary patterns, the positions of the sparse patterns with low priority order are occupied, and the sparse patterns with low priority order cannot add auxiliary patterns.
[0006] To solve the above technical problems, the present application provides a via layer auxiliary pattern adding method, comprising:
[0007] obtaining an original layout of a via layer, the via layer comprising a plurality of via patterns;
[0008] screening a via pattern located in the sparse area, and taking the via pattern located in the sparse area as a target pattern, the target pattern comprising a plurality of units, each unit comprising two first target patterns oppositely arranged and two second target patterns oppositely arranged, the first target patterns and the second target patterns being arranged at intervals;
[0009] arranging a priority order of adding a first auxiliary pattern to the two first target patterns and the two second target patterns;
[0010] adding the first auxiliary pattern between the two target patterns with a high priority order, the first auxiliary pattern having a length distributed along a second direction and a width distributed along a first direction, the first auxiliary pattern having a first end portion and a second end portion, the first end portion and the second end portion being arranged close to the target patterns with a low priority order respectively;
[0011] extending at least one of the first end portion and the second end portion along the first direction to form a second auxiliary pattern at the end portion, and obtaining a target layout.
[0012] Preferably, the screening of the via pattern located in the sparse area comprises:
[0013] obtaining a process parameter of two adjacent via patterns;
[0014] determining whether the via pattern is located in the sparse area based on the process parameter.
[0015] Preferably, the arranging of the priority order of adding the first auxiliary pattern to the two first target patterns and the two second target patterns comprises:
[0016] obtaining a first interval of the two first target patterns;
[0017] obtaining a second interval of the two second target patterns;
[0018] if the first interval is smaller than the second interval, the priority order of adding the first auxiliary pattern to the two first target patterns is higher than that of adding the first auxiliary pattern to the two second target patterns;
[0019] if the first interval is larger than the second interval, the priority order of adding the first auxiliary pattern to the two first target patterns is lower than that of adding the first auxiliary pattern to the two second target patterns;
[0020] if the first interval is equal to the second interval, the priority order of adding the first auxiliary pattern to the two first target patterns is equal to that of adding the first auxiliary pattern to the two second target patterns.
[0021] Preferably, the first distance is smaller than the second distance, and a first auxiliary pattern is added between two first target patterns, the distance between the first auxiliary pattern and the two first target patterns being equal.
[0022] Preferably, the first auxiliary pattern comprises a main pattern, the length of the main pattern along the second direction being greater than or equal to the line width of the first target pattern along the second direction.
[0023] Preferably, the width of the second auxiliary pattern along the first direction is greater than or equal to the line width of the second target pattern along the first direction.
[0024] Preferably, the central axis of the second auxiliary pattern along the second direction coincides with the central axis of the second target pattern along the second direction.
[0025] Preferably, a third auxiliary pattern is added around the first target pattern and the second target pattern.
[0026] Preferably, the via pattern comprises a contact hole pattern or a via hole pattern.
[0027] Based on the same inventive concept, the present application also provides a via layer layout, comprising:
[0028] The via layer auxiliary pattern adding method is used to add auxiliary patterns to the via layer layout.
[0029] Compared with the prior art, the via layer auxiliary pattern adding method has the following advantages:
[0030] The present application adds a first auxiliary pattern between two target patterns with high priority order. Then, the first auxiliary pattern is improved by extending the first end and the second end of the first auxiliary pattern to add a second auxiliary pattern between two target patterns with low priority order. Even if the target pattern with high priority order has occupied the position of the target pattern with low priority order, the target pattern with low priority order can still be added with auxiliary patterns. The process window and the focal depth of the via pattern are improved, and the transfer precision of the via pattern is improved during photolithography.
[0031] The via layer layout provided by the present application belongs to the same inventive concept as the via layer auxiliary pattern adding method provided by the present application. Therefore, the via layer layout provided by the present application has at least all the advantages of the via layer auxiliary pattern adding method provided by the present application. The via pattern in the via layer layout has the advantages of high process window, high focal depth, and high pattern transfer precision. BRIEF DESCRIPTION OF DRAWINGS
[0032] Figure 1 FIG. 1 is a schematic diagram of a via layer layout in an embodiment of the present application;
[0033] Figure 2 is a schematic view of the final layout design pattern formed in an embodiment of the present application;
[0034] Figure 3 is a flowchart of the method of adding auxiliary patterns to the via layer in an embodiment of the present application;
[0035] Figure 4 is a schematic view after adding auxiliary patterns between the first target patterns in an embodiment of the present application;
[0036] Figure 5 is a schematic view after deforming the auxiliary patterns in an embodiment of the present application;
[0037] Figure 6 is a schematic view of the final layout design pattern formed in an embodiment of the present application;
[0038] in the drawings,
[0039] 10 - original via pattern; 20 - sub-resolution auxiliary pattern;
[0040] 110 - first target pattern; 120 - second target pattern;
[0041] 200 - first auxiliary pattern; 210 - first end;
[0042] 220 - second end; 230 - main pattern;
[0043] 240 - second auxiliary pattern; 300 - third auxiliary pattern. DETAILED DESCRIPTION
[0044] To make the objects, advantages and features of the present application more clearly, the following further describes the via layer layout and the method of adding auxiliary patterns to the via layer in the embodiments of the present application in conjunction with the drawings and specific embodiments. It should be noted that the drawings are very simplified and use non-precise proportions, and are only used to conveniently and clearly assist the purpose of explaining the embodiments of the present application. It should be understood that the drawings of the specification do not necessarily show the specific structure of the present application in proportion, and the illustrative features used to explain some principles of the present application in the drawings of the specification will also be slightly simplified. The specific design features of the present application disclosed herein include, for example, specific sizes, directions, positions and shapes, which will be determined partly by the specific application and use environment. In the following described embodiments, sometimes the same reference signs are used to represent the same parts or parts with the same function between different drawings to omit the repeated description. In the specification, similar reference signs and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in the subsequent drawings.
[0045] Furthermore, the terms "first", "second", or the like are used only to describe the purpose and are not to be construed as indicating or implying relative importance or a specific number of the indicated technical features. Thus, features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly and specifically limited.
[0046] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms is not necessarily directed to the same embodiment or example. Also, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples, without contradiction.
[0047] Especially need to be explained is that in the following embodiments, the term "first direction" refers to the direction parallel to the width of the first auxiliary pattern 200 (i.e., the direction of the arrow Y in FIG. 2). The term "second direction" refers to the direction parallel to the length of the first auxiliary pattern 200 (i.e., the direction of the arrow X in FIG. 2). Figure 4 Especially need to be explained is that in the following embodiments, the term "first direction" refers to the direction parallel to the width of the first auxiliary pattern 200 (i.e., the direction of the arrow Y in FIG. 2). The term "second direction" refers to the direction parallel to the length of the first auxiliary pattern 200 (i.e., the direction of the arrow X in FIG. 2). Figure 4 Especially need to be explained is that in the following embodiments, the term "first direction" refers to the direction parallel to the width of the first auxiliary pattern 200 (i.e., the direction of the arrow Y in FIG. 2). The term "second direction" refers to the direction parallel to the length of the first auxiliary pattern 200 (i.e., the direction of the arrow X in FIG. 2).
[0048] Referring to FIG. 1, FIG. 2, and FIG. 3, the first auxiliary pattern 200 is added between the two original via patterns 10 in the first direction, and the second auxiliary pattern 200 is added between the two original via patterns 10 in the second direction. Figure 1 As shown in FIG. 1, FIG. 2, and FIG. 3, the first auxiliary pattern 200 is added between the two original via patterns 10 in the first direction, and the second auxiliary pattern 200 is added between the two original via patterns 10 in the second direction. Figure 2 As shown in FIG. 1, FIG. 2, and FIG. 3, the first auxiliary pattern 200 is added between the two original via patterns 10 in the first direction, and the second auxiliary pattern 200 is added between the two original via patterns 10 in the second direction. Figure 1 In the first direction, the distance between the two original via patterns 10 is c. In the second direction, the distance between the two original via patterns 10 is b. Since b is greater than c, the priority of adding the sub-resolution auxiliary pattern 20 between the two original via patterns 10 in the first direction is greater than the priority of adding the sub-resolution auxiliary pattern 20 between the two original via patterns 10 in the second direction. Therefore, the first sub-resolution auxiliary pattern 20 is added at position a between the two original via patterns 10 in the first direction, and the second sub-resolution auxiliary pattern 20 is added at position b between the two original via patterns 10 in the second direction. Figure 1The sub-resolution auxiliary pattern 20 is shown. However, the two original guide hole patterns 10 in the second direction also need to be added with the sub-resolution auxiliary pattern 20 at position a. Because position a is already occupied, the sub-resolution auxiliary pattern 20 cannot be added between the two original guide hole patterns 10 in the second direction. This reduces the process window of the original guide hole patterns 10, reduces the depth of focus during lithography, and reduces the accuracy of the guide hole pattern transfer.
[0049] The core idea of the present invention is to provide a method for adding auxiliary patterns to a guide hole layer, which can ensure that sub-resolution auxiliary patterns can be added between guide hole patterns with low priority, so as to improve the process window of the guide hole pattern, increase the depth of focus, and thus improve the accuracy of the guide hole pattern transfer during lithography.
[0050] In order to realize the above idea, the present invention provides a method for adding auxiliary patterns to a guide hole layer. Figures 3 to 6 A specific embodiment of a method for adding auxiliary patterns to a guide hole layer is disclosed. The method for adding auxiliary patterns to a guide hole layer includes the following steps S1 to S5.
[0051] Step S1: obtaining an original layout of a guide hole layer, wherein the guide hole layer includes a plurality of guide hole patterns.
[0052] Specifically, refer to Figure 3 As shown in Figure 1, the original layout of the via layer is obtained from the original layout design. The via layer includes several via patterns. Vias can be contact holes or through-holes. Metal layers and through-holes interconnect different metal layers. Metal layers and contact holes electrically connect semiconductor devices to the external environment. Therefore, during photolithography, transferring the via pattern to the substrate is a key step in semiconductor device fabrication.
[0053] The guide hole pattern can be in a square, rectangular, circular, or other shape. Since guide hole patterns are generally square, this embodiment uses a square guide hole pattern for explanation. Regarding the process parameters of the guide hole pattern, such as line width, since the guide hole pattern is square, the line width of the guide hole pattern is the length of any side of the square. Different design rules apply to the line width of the guide hole pattern at different process nodes. In this embodiment, no specific requirements are set for the line width of the guide hole pattern.
[0054] Step S2: Filter out the guide hole patterns located in the sparse area and use the guide hole patterns located in the sparse area as target patterns. The target patterns include a plurality of units, each unit including two first target patterns 110 and two second target patterns 120 that are oppositely arranged. The first target patterns 110 and the second target patterns 120 are spaced apart.
[0055] Specifically, refer to Figure 3 andFigure 4 As shown, the guide hole patterns located in the sparse area are screened out, and the guide hole patterns located in the sparse area are used as target patterns, including:
[0056] First, obtain the process parameters of the via pattern. These parameters include the spacing between two adjacent via patterns or the distance between the center points of two adjacent via patterns. For ease of illustration, the spacing between two adjacent via patterns is used as the preferred process parameter. Various process parameters for the via pattern can be directly obtained from the layout design.
[0057] Next, based on the process parameters, the process determines whether the via pattern is in a sparse area. If so, it is selected as the target pattern. Based on the spacing between two adjacent via patterns, the process determines whether the via pattern is in a dense area, a sparse area, or an isolated area. Via patterns in sparse and isolated areas are ignored, and only those in sparse areas are screened.
[0058] The target pattern includes several units, each unit includes two first target patterns 110 and two second target patterns 120 arranged opposite to each other, and the first target patterns 110 and the second target patterns 120 are arranged at intervals. Figure 4 The structure shown. Figure 4 In the embodiment, two first target patterns 110 and two second target patterns 120 form a structure with a space in between. The two first target patterns 110 are distributed along a first direction, and the two second target patterns 120 are distributed along a second direction.
[0059] Step S3: Arranging the priority order of adding the first auxiliary pattern 200 to the two first target patterns 110 and the two second target patterns 120 .
[0060] Specifically, refer to Figures 3 to 6 As shown, the priority order of adding the first auxiliary graphics 200 to the two first target graphics 110 and the two second target graphics 120 includes:
[0061] The first spacing between the two first target patterns 110 and the second spacing between the two second target patterns 120 are obtained respectively. The spacing between the two first target patterns 110 and the second spacing between the two second target patterns 120 are directly obtained through layout design. If the first spacing is less than the second spacing, the priority of adding the first auxiliary pattern 200 to the two first target patterns 110 is higher than the priority of adding the first auxiliary pattern 200 to the two second target patterns 120. If the first spacing is greater than the second spacing, the priority of adding the first auxiliary pattern 200 to the two first target patterns 110 is lower than the priority of adding the first auxiliary pattern 200 to the two second target patterns 120. If the first spacing is equal to the second spacing, the priority of adding the first auxiliary pattern 200 to the two first target patterns 110 is equal to the priority of adding the first auxiliary pattern 200 to the two second target patterns 120.
[0062] Step S4: Add a first auxiliary graphic 200 between two target graphics with higher priority, the length of the first auxiliary graphic 200 is distributed along the second direction, the width of the first auxiliary graphic 200 is distributed along the first direction, and the first auxiliary graphic 200 has a first end 210 and a second end 220, and the first end 210 and the second end 220 are respectively set close to the target graphic with lower priority.
[0063] Specifically, refer to Figures 3 to 6 As shown, if the first spacing is greater than the second spacing, the first auxiliary pattern 200 is added between the two first target patterns 110. If the second spacing is greater than the first spacing, the first auxiliary pattern 200 is added between the two second target patterns 120. If the first spacing is equal to the second spacing, the first auxiliary pattern 200 can be added between the two first target patterns 110 or between the two second target patterns 120. In this embodiment, the first spacing is smaller than the second spacing as an example for explanation. Figure 4As shown, a first auxiliary pattern 200 is added between two first target patterns 110. The first auxiliary pattern 200 is a rectangular structure, and the length of the first auxiliary pattern 200 is distributed along the second direction, and the width of the first auxiliary pattern 200 is distributed along the first direction. The first auxiliary pattern 200 has a first end portion 210 and a second end portion 220, which are respectively arranged close to the second target patterns 120 with low priority order. The interval of the first auxiliary pattern 200 from the two first target patterns 110 can be equal or not equal. The interval of the first end portion 210 and the second end portion 220 from the two second target patterns 120 can be equal or not equal. Preferably, in order to make the photoetching effect of the first auxiliary pattern 200 added to the two first target patterns 110 the same, the two first target patterns 110 coincide with the middle axis m of the first auxiliary pattern 200 along the first direction. The interval d1 and d2 of the first auxiliary pattern 200 from the two first target patterns 110 are equal.
[0064] Step S5: At least one of the first end portion 210 and the second end portion 220 is extended along the first direction to form a second auxiliary pattern 240 at the end portion, and a target layout is obtained.
[0065] Specifically, referring to Figures 3 to 5 As shown, the target layout is the corrected via layer layout. The first auxiliary pattern 200 has a first end portion 210 and a second end portion 220. At least one of the first end portion 210 and the second end portion 220 is extended along the first direction to form a second auxiliary pattern 240 at the first end portion 210 and the second end portion 220 respectively. The second auxiliary pattern 240 can be formed only at the first end portion 210, or only at the second end portion 220, to increase the pattern density of the two second target patterns 120 and improve the process window of the second target pattern 120, so as to improve the precision of the via layer pattern etching. Preferably, the second auxiliary pattern 240 is formed at both the first end portion 210 and the second end portion 220. To further improve the pattern density of the second target pattern 120, so as to further improve the process window of the second target pattern 120, and further improve the precision of the via layer pattern etching. The second auxiliary pattern 240 can be extended upwards along the Y axis, or downwards along the Y axis, preferably, the second auxiliary pattern 240 is symmetrically extended upwards and downwards along the Y axis, that is, the middle axis of the second auxiliary pattern 240 along the second direction coincides with the middle axis n of the second target pattern 120 along the second direction. The part of the first auxiliary pattern 200 which is not extended serves as a main pattern 230. The length of the main pattern 230 along the second direction is greater than or equal to the line width of the first target pattern 110 along the second direction. The length d3 of the second auxiliary pattern 240 along the first direction is greater than or equal to the line width of the second target pattern 120.
[0066] Referring to FIG. 1, in order to further improve the pattern density of the first target pattern 110 and the second target pattern 120, a third auxiliary pattern 300 is added around the first target pattern 110 and the second target pattern 120. The process window of the first target pattern 110 and the second target pattern 120 is further improved, so that the etching precision of the via layer pattern is further improved. Figure 6 Referring to FIG. 1, in order to further improve the pattern density of the first target pattern 110 and the second target pattern 120, a third auxiliary pattern 300 is added around the first target pattern 110 and the second target pattern 120. The process window of the first target pattern 110 and the second target pattern 120 is further improved, so that the etching precision of the via layer pattern is further improved.
[0067] Referring to Table 1, Table 1 is a comparison of the process variation bandwidth measured by adding auxiliary patterns to the via pattern by the method disclosed in the prior art and the method disclosed in the embodiment.
[0068]
[0069] As can be seen from Table 1, by improving the first end portion 210 and the second end portion 220 of the first auxiliary pattern 200, i.e., forming the auxiliary pattern of the second target pattern 120 at the first end portion 210 and the second end portion 220, the process variation bandwidth of the two second target patterns 120 can be reduced. It should be noted that the process variation bandwidth (PV Band) refers to the area between the outer contour and the inner contour of the pattern. The reduction of the process variation bandwidth indicates that the process window of the via pattern is increased and the etching precision is improved.
[0070] The embodiment adds the first auxiliary pattern 200 between the two first target patterns 110 with high priority order. Then, the first auxiliary pattern 200 is improved by extending the first end portion 210 and the second end portion 220 of the first auxiliary pattern 200 to add the second auxiliary pattern 240 between the two second target patterns 120 with low priority order. Even if the first target pattern 110 with high priority order has occupied the position of adding auxiliary pattern to the second target pattern 120 with low priority order, the second target pattern 120 with low priority order can still be added with auxiliary pattern. The process window and the depth of focus of the via pattern are improved, and the transfer precision of the via pattern during lithography is improved.
[0071] The embodiment discloses a via layer layout, comprising:
[0072] The auxiliary pattern is added to the via layer layout by the method for adding auxiliary pattern to the via layer as described above.
[0073] The via layer layout provided by the embodiment belongs to the same inventive concept as the via layer auxiliary pattern adding method provided by the embodiment, and thus the via layer layout provided by the embodiment has at least all the advantages of the via layer auxiliary pattern adding method provided by the embodiment. The via pattern in the via layer layout has the advantages of high process window, high focal depth, and high pattern transfer precision.
[0074] To sum up, the above embodiments describe different configurations of the via layer layout and the via layer auxiliary pattern adding method in detail. Of course, the above description is only a description of the preferred embodiments of the present application, and does not limit the scope of the present application in any way. The present application includes but is not limited to the configurations listed in the above embodiments. Those skilled in the art can easily draw conclusions from the above embodiments. Any modification or change made by those skilled in the art based on the above disclosure is within the scope of the claims.
Claims
1. A method for adding auxiliary patterns to a guide hole layer, characterized in that: include: Acquire an original layout of a guide hole layer, wherein the guide hole layer includes a plurality of guide hole patterns; Screening out guide hole patterns located in a sparse area and using the guide hole patterns located in the sparse area as target patterns, wherein the target patterns include a plurality of units, each unit including two first target patterns and two second target patterns that are oppositely arranged, and the first target patterns and the second target patterns are spaced apart; Arranging the priority order of adding the first auxiliary graphics to the two first target graphics and the two second target graphics; adding a first auxiliary pattern between two target patterns with a higher priority, wherein the length of the first auxiliary pattern is distributed along the second direction, the width of the first auxiliary pattern is distributed along the first direction, and the first auxiliary pattern has a first end and a second end, and the first end and the second end are respectively arranged close to the target pattern with a lower priority; At least one of the first end and the second end is extended along a first direction to form a second auxiliary pattern at the end to obtain a target layout.
2. The method for adding auxiliary patterns to the guide hole layer according to claim 1, characterized in that: The step of screening out the guide hole patterns located in the sparse area includes: Obtaining process parameters of two adjacent guide hole patterns; Based on the process parameters, it is determined whether the guide hole pattern is located in a sparse area.
3. The method for adding auxiliary patterns to the guide hole layer according to claim 1, wherein: The arranging the priority order of adding the first auxiliary graphics to the two first target graphics and the two second target graphics comprises: Obtaining a first distance between two first target graphics; Obtaining a second distance between two second target graphics; If the first spacing is smaller than the second spacing, the priority of adding the first auxiliary pattern to the two first target patterns is higher than the priority of adding the first auxiliary pattern to the two second target patterns; If the first spacing is greater than the second spacing, the priority of adding the first auxiliary pattern to the two first target patterns is lower than the priority of adding the first auxiliary pattern to the two second target patterns; If the first spacing is equal to the second spacing, the priority order of adding the first auxiliary pattern to the two first target patterns is equal to the priority order of adding the first auxiliary pattern to the two second target patterns.
4. The method for adding auxiliary patterns to the guide hole layer according to claim 3, characterized in that: The first spacing is smaller than the second spacing, a first auxiliary pattern is added between the two first target patterns, and the first auxiliary pattern is equidistant from the two first target patterns.
5. The method for adding auxiliary patterns to a guide hole layer according to claim 4, wherein: The first auxiliary pattern includes a main pattern, and a length of the main pattern along the second direction is greater than or equal to a line width of the first target pattern along the second direction.
6. The method for adding auxiliary patterns to a guide hole layer according to claim 4, wherein: The width of the second auxiliary pattern along the first direction is greater than or equal to the line width of the second target pattern along the first direction.
7. The method for adding auxiliary patterns to a guide hole layer according to claim 4, wherein: A central axis of the second auxiliary pattern along the second direction coincides with a central axis of the second target pattern along the second direction.
8. The method for adding auxiliary patterns to a guide hole layer according to claim 1, wherein: A third auxiliary pattern is added around the first target pattern and the second target pattern.
9. The method for adding auxiliary patterns to a guide hole layer according to claim 1, wherein: The guide hole pattern includes a contact hole pattern or a through hole pattern.
10. A via layer layout, characterized in that: include: Auxiliary patterns are added to the via layer layout using the method for adding auxiliary patterns to the via layer according to any one of claims 1 to 9.