Impedance fluctuation optimization method, apparatus, device, medium, and product

Abstract

The application discloses an impedance fluctuation optimization method and device, equipment, medium and product, relates to the technical field of impedance optimization, and the method comprises the following steps: acquiring impedance fluctuation time domain data and a target impedance value of a target line; screening the impedance fluctuation time domain data of a non-fixed section of the target line to obtain a first adjustment section; dividing the first adjustment section according to corresponding first screening points to obtain a plurality of second adjustment sections; constructing a first adjustment area and a second adjustment area; adjusting the measured impedance value of the second adjustment section in the first adjustment area and the second adjustment area respectively with the target impedance value as a target; obtaining an updated first adjustment area and an updated second adjustment area; and calculating the line width of each second adjustment section according to the updated first adjustment area and the updated second adjustment area. The application can reduce the influence of impedance fluctuation and improve signal integrity.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of impedance optimization, in particular to an impedance fluctuation optimization method, device, equipment, medium and product. BACKGROUND

[0002] With the development of society and technology, the transmission speed of data is developing towards high speed. When high-speed transmission signals pass through discontinuous places, impedance value fluctuation occurs, signal reflection is generated, and signal integrity is affected.

[0003] The golden finger, as a physical interface of a memory module and a mainboard slot, the structural characteristics of which cause the region to become a key impedance discontinuous point. SUMMARY

[0004] The application aims to provide an impedance fluctuation optimization method, device, equipment, medium and product, which can reduce the influence of impedance fluctuation and improve signal integrity.

[0005] To achieve the above-mentioned purpose, the application provides the following solutions.

[0006] In a first aspect, the application provides an impedance fluctuation optimization method, comprising:

[0007] Obtaining impedance fluctuation time domain data and a target impedance value of a target line, the target line comprising a fixed section and a non-fixed section; the impedance fluctuation time domain data comprising a plurality of data points varying with time sequence; the data point comprising a measurement time and a measurement impedance value corresponding to the measurement time.

[0008] Screening the impedance fluctuation time domain data of the non-fixed section to obtain a first screening point, a fluctuation end point and an adjustment end point; the first screening point being a data point with a measurement impedance value equal to the target impedance value; the fluctuation end point being the last data point with a difference between the measurement impedance value and the target impedance value exceeding a preset threshold; the adjustment end point being the first first screening point after the fluctuation end point.

[0009] Constructing a first adjustment region and a second adjustment region; the first adjustment region being a region constructed with the fixed section and the second adjustment section adjacent to the fixed section; the second adjustment region being a region constructed with two adjacent second adjustment sections.

[0010] Adjusting the measurement impedance value of the second adjustment section in the first adjustment region and the second adjustment region respectively with the target impedance value as a target to obtain updated first adjustment region and second adjustment region.

[0011] Adjusting the measurement impedance value of the second adjustment section in the first adjustment region and the second adjustment region respectively with the target impedance value as a target to obtain updated first adjustment region and second adjustment region.

[0012] According to the updated first adjustment region and the second adjustment region, a line width of each second adjustment section is calculated.

[0013] In a second aspect, the application provides an impedance fluctuation optimization device, comprising:

[0014] A data acquisition module is configured to inject a simulation signal to a starting position of a fixed section of the target line to acquire time-domain impedance fluctuation data of the target line.

[0015] A processing module is configured to execute any of the above impedance fluctuation optimization methods.

[0016] In a third aspect, the application provides a computer device, comprising a memory, a processor, a computer program stored in the memory and executable on the processor, and the processor executes the computer program to implement the steps of any of the above impedance fluctuation optimization methods.

[0017] In a fourth aspect, the application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the steps of any of the above impedance fluctuation optimization methods.

[0018] In a fifth aspect, the application provides a computer program product, comprising a computer program, and the computer program is executed by a processor to implement the steps of any of the above impedance fluctuation optimization methods.

[0019] According to the specific embodiments provided by the application, the application has the following technical effects:

[0020] The application provides an impedance fluctuation optimization method, device, equipment, medium and product. The impedance fluctuation time domain data and the target impedance value of a target line are acquired, the impedance fluctuation time domain data of a non-fixed section of the target line is screened, a first screening point, a fluctuation end point and an adjustment end point are obtained, data points from a start point to the adjustment end point of the non-fixed section of the target line form a first adjustment section, the first adjustment section is divided according to the corresponding first screening point, a plurality of second adjustment sections are obtained, a first adjustment region and a second adjustment region are constructed, the measurement impedance value of the second adjustment section in the first adjustment region and the second adjustment region is adjusted respectively with the target impedance value as a target, the updated first adjustment region and the second adjustment region are obtained, the line width of each second adjustment section is calculated according to the updated first adjustment region and the second adjustment region, fine adjustment of the target line is realized, for any adjustment region (the first adjustment region or the second adjustment region), when the impedance of the first second adjustment section or the fixed section is lower than the target impedance value, the capacitor characteristic is presented, and the average value of the measurement impedance value of the last second adjustment section after adjustment is higher than the target impedance value, the inductor characteristic is presented, each adjustment region always contains a section of line presenting the capacitor characteristic and a section of line presenting the inductor characteristic after adjustment, the two are complementary to each other, and the influence of the impedance fluctuation is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description only constitute some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0022] Figure 1 The application environment diagram of an impedance fluctuation optimization method in an embodiment of the present application;

[0023] Figure 2 The flowchart of an impedance fluctuation optimization method provided by an embodiment of the present application;

[0024] Figure 3 The target line structure, data screening and region division schematic diagram corresponding to an impedance fluctuation optimization method provided by an embodiment of the present application;

[0025] Figure 4 The schematic diagram of a microstrip line structure;

[0026] Figure 5 The schematic diagram of a stripline structure;

[0027] Figure 6 The schematic diagram of the structure after adjusting the line width of Comparative Example 1;

[0028] Figure 7A structure diagram after adjusting line width for Comparative Example 2;

[0029] Figure 8 Impedance fluctuation curves after adjusting line width for Test Example, Comparative Example 1 and Comparative Example 2;

[0030] Figure 9 For Figure 8 In the data shown, the deviation curve of the data corresponding to the time axis 25ps~175ps;

[0031] Figure 10 An impedance fluctuation optimization device provided by an embodiment of the present application;

[0032] Figure 11 A structure diagram of a computer device provided by an embodiment of the present application.

[0033] The figure mark: 102 terminal, 104 server, 1 data acquisition module, 2 processing module. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0035] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0036] The impedance fluctuation optimization method provided by the embodiments of the present application can be applied to, for example, Figure 1The application environment shown. Among them, the terminal 102 communicates with the server 104 through the network. The data storage system can store the data required by the server 104 to process. The data storage system can be set up separately, or integrated on the server 104, or placed on the cloud or other servers. The terminal 102 can send the impedance fluctuation time domain data of the target line and the target impedance value to the server 104, and after the server 104 receives the data to be processed, for the data to be processed, the server 104 screens the impedance fluctuation time domain data of the non-fixed section, obtains the first screening point, the fluctuation end point and the adjustment end point; The first screening point is the data point whose measured impedance value is equal to the target impedance value; The fluctuation end point is the last data point whose difference between the measured impedance value and the target impedance value exceeds the preset threshold; The adjustment end point is the first first screening point after the fluctuation end point; The data points from the start point of the non-fixed section to the adjustment end point form a first adjustment section, and the first adjustment section is divided according to the corresponding first screening point to obtain a plurality of second adjustment sections; Construct the first adjustment region and the second adjustment region; The first adjustment region is a region constructed with the fixed section and the second adjustment section adjacent to the fixed section; The second adjustment region is a region constructed with two adjacent second adjustment sections; Take the target impedance value as the target, respectively adjust the measured impedance value of the second adjustment section in the first adjustment region and the second adjustment region, and obtain the updated first adjustment region and the second adjustment region; According to the updated first adjustment region and the second adjustment region, calculate the line width of each second adjustment section. The server 104 can feed back the line width of each second adjustment section obtained to the terminal 102. In addition, in some embodiments, the impedance fluctuation optimization method can also be realized by the server 104 or the terminal 102 alone, such as the terminal 102 can directly perform impedance fluctuation optimization processing on the impedance fluctuation time domain data and the target impedance value of the target line to be processed, or the server 104 can obtain the impedance fluctuation time domain data and the target impedance value of the target line to be processed from the data storage system, and perform impedance fluctuation optimization processing on the impedance fluctuation time domain data and the target impedance value of the target line to be processed.

[0037] Among them, the terminal 102 can be but not limited to various desktop computers, notebook computers, smart phones, tablet computers, Internet of Things devices and portable wearable devices, and the Internet of Things devices can be smart speakers, smart televisions, smart air conditioners, smart vehicle devices, etc. The portable wearable device can be a smart watch, a smart bracelet, a head-mounted device, etc. The server 104 can be realized by an independent server or a server cluster composed of multiple servers, and can also be a cloud server.

[0038] In an exemplary embodiment, as Figure 2As shown, an impedance fluctuation optimization method is provided, which is executed by a computer device, specifically, can be executed by a terminal or a server, or both, in the embodiments of the present application, the method is applied to Figure 1 The server 104 in the method is taken as an example for illustration, including the following steps 100 to 600. Wherein:

[0039] Step 100: obtaining impedance fluctuation time domain data and target impedance value of a target line, the target line including a fixed section and a non-fixed section; the impedance fluctuation time domain data including a plurality of data points varying with time sequence; the data points including a measurement time and a measurement impedance value corresponding to the measurement time.

[0040] Step 200: screening the impedance fluctuation time domain data of the non-fixed section to obtain a first screening point, a fluctuation end point and an adjustment end point; the first screening point being a data point with a measurement impedance value equal to the target impedance value; the fluctuation end point being a last data point with a difference between the measurement impedance value and the target impedance value exceeding a preset threshold; and the adjustment end point being a first first screening point after the fluctuation end point.

[0041] Step 300: constructing a first adjustment section from the data points of the start point to the adjustment end point of the non-fixed section, and dividing the first adjustment section according to the corresponding first screening points to obtain a plurality of second adjustment sections.

[0042] Step 400: constructing a first adjustment region and a second adjustment region; the first adjustment region being a region constructed from the fixed section and the second adjustment section adjacent to the fixed section; and the second adjustment region being a region constructed from two adjacent second adjustment sections.

[0043] Step 500: adjusting the measurement impedance value of the second adjustment section in the first adjustment region and the second adjustment region respectively with the target impedance value as a target to obtain updated first adjustment region and second adjustment region.

[0044] Step 600: calculating the line width of each second adjustment section according to the updated first adjustment region and second adjustment region.

[0045] Implementing the above steps 100 to 600 can achieve fine adjustment of the target line. For any adjustment region (first adjustment region or second adjustment region), when the impedance of the first second adjustment section or the fixed section is lower than the target impedance value, it presents a capacitance characteristic, and the average value of the measurement impedance value of the last second adjustment section after adjustment is higher than the target impedance value, presenting an inductance characteristic. Each adjustment region always contains a section presenting a capacitance characteristic and a section presenting an inductance characteristic after adjustment, which complement each other and reduce the impact of impedance fluctuation.

[0046] In an exemplary embodiment, the target line in step 100 is the gold finger and the peripheral line in communication with the gold finger (in other embodiments, any line with impedance discontinuity, including any position with impedance discontinuity, can be targeted), wherein a partial or entire area of the gold finger corresponds to the fixed section, for example, the area corresponding to the center point of the gold finger to the intersection point of the gold finger and the communication line of the circuit board can be the fixed section, or the area corresponding to other position points of the gold finger to the intersection point of the gold finger and the communication line of the circuit board can be the fixed section (the fixed section refers to an area where the line width cannot be adjusted, since the structure size of the gold finger is fixed, the width of the gold finger cannot be adjusted arbitrarily, therefore, the fixed section in the embodiment corresponds to a partial or entire area of the gold finger structure); the communication line of the gold finger periphery corresponds to the non-fixed section.

[0047] In an exemplary embodiment, the impedance fluctuation time domain data of the target line in step 100 refers to the impedance fluctuation time domain data obtained by injecting a simulation signal into the center point of the gold finger as the starting point of the signal and using a time domain reflectometer (in other embodiments, the position of the injected signal can be on the side deviated from the communication line of the circuit board of the center point of the gold finger).

[0048] Since the impedance fluctuation time domain data is time sequence varying impedance data, each impedance data can be one-to-one corresponding to the line position of the signal transmission through the time sequence information, and the data screening and division results can be represented by the position corresponding relationship of the line structure, as shown in Figure 3 .

[0049] Figure 3 Part of the line structure from the center point of the gold finger to the peripheral line is shown in FIG. 1A, wherein point A corresponds to the center point of the gold finger, which is also the starting point of the injected signal (in other embodiments, the position of the injected signal can be on the side deviated from the communication line of the circuit board of the center point of the gold finger, i.e., the left side of point A), and corresponds to the starting point position of the fixed section in step 100, point A corresponds to the point with time sequence 0 of the impedance fluctuation time domain data, and as the time sequence increases, the data points of the impedance fluctuation time domain data correspond to the position points in the structure that move rightward constantly; point B corresponds to the intersection point of the gold finger and the communication line, which corresponds to the end point of the fixed section and the starting point of the non-fixed section in step 100, and points A to B, i.e., Y1 section, are the position areas corresponding to the data points in the fixed section; points C, D, E and F all correspond to the first screening points of the non-fixed section in step 200; point G corresponds to the fluctuation end point in the non-fixed section, the first first screening point rightward of point G is point F, and point F also corresponds to the adjustment end point in step 200. Figure 3

[0050] ​The area between point B and point F corresponds to the first adjustment section in step 300, and points C, D and E divide the first adjustment section into four second adjustment sections (corresponding to the second adjustment sections in step 300), which are data point intervals in the impedance fluctuation time domain data corresponding to Y2 section, Y3 section, Y4 section and Y5 section respectively. Figure 3 In the above embodiment, t1, t2, t3, t4 and t5 are equivalent times corresponding to Y1 section, Y2 section, Y3 section, Y4 section and Y5 section respectively.

[0051] The data point interval in the impedance fluctuation time domain data corresponding to the line section between point A and point C (L1 section) is the first adjustment area recorded in step 400, and the data point intervals in the impedance fluctuation time domain data corresponding to the line section between point B and point D (L2 section), the line section between point C and point E (L3 section) and the line section between point D and point F (L4 section) are the second adjustment areas recorded in step 400 respectively.

[0052] In an exemplary embodiment, the simulation signal in the above embodiment is a simulation of the actual communication signal of the target line, and the simulation signal acquisition method is as follows:

[0053] The rising edge time in the actual communication process of the target line is measured by an oscilloscope, and the measured rising edge time is input to a time domain reflectometer, and the time domain reflectometer outputs a simulation signal according to the rising edge time.

[0054] In another exemplary embodiment of the present application, the measurement impedance values of the second adjustment sections in the first adjustment area and the second adjustment areas are adjusted to target impedance values in step 500, and updated first adjustment area and second adjustment areas are obtained, which specifically includes:

[0055] In step 501, for the first adjustment area, the measurement impedance values of the data points in the fixed section are kept unchanged, and the measurement impedance values of all data points in the second adjustment section are adjusted so that the average impedance of the data points in the first adjustment area is equal to the target impedance value, and the updated first adjustment area is obtained.

[0056] In step 502, for the first second adjustment area, the data points in the first second adjustment section of the second adjustment area are updated to the data points in the second adjustment section of the updated first adjustment area, and the data points in the updated first second adjustment section of the second adjustment area are kept unchanged, and the measurement impedance values of all data points in the second second adjustment section of the second adjustment area are adjusted so that the average impedance of the data points in the corresponding second adjustment area is equal to the target impedance value, and the corresponding updated second adjustment area is obtained.

[0057] In step 503, for the nth second adjustment region, the data points in the first second adjustment segment of the nth second adjustment region are updated to the data points in the second adjustment segment of the updated (n-1)th second adjustment region, the data points in the updated first second adjustment segment of the nth second adjustment region remain unchanged, the measured impedance values of all data points in the second second adjustment segment of the nth second adjustment region are adjusted, so that the average impedance of the data points in the corresponding nth second adjustment region is equal to the target impedance value, to obtain the corresponding updated nth second adjustment region; wherein n≥2.

[0058] In another example embodiment of the present application, step 600 involves calculating the line width of each second adjustment segment according to the updated first adjustment region and the second adjustment region, specifically including:

[0059] In step 601, the target line type is obtained.

[0060] In step 602, the line width of each second adjustment segment is calculated according to the target line type and the updated first adjustment region and the second adjustment region.

[0061] In another example embodiment of the present application, step 602 involves calculating the line width of each second adjustment segment according to the target line type and the updated first adjustment region and the second adjustment region, specifically including:

[0062] When the target line type is a microstrip line, the line width of each second adjustment segment is calculated according to the following formula:

[0063] (1);

[0064] wherein, Z is the average value of the measured impedance values of the data points of the second adjustment segment, is the dielectric constant, H is the thickness of the first dielectric layer of the microstrip line, W is the line width of the line region corresponding to the second adjustment segment.

[0065] The schematic diagram of the microstrip line structure is shown in Figure 4 .

[0066] In another example embodiment of the present application, step 602 involves calculating the line width of each second adjustment segment according to the target line type and the updated first adjustment region and the second adjustment region, specifically including:

[0067] When the target line type is a stripline, the line width of each second adjustment segment is calculated according to the following formula:

[0068] (2);

[0069] in, Z This represents the average measured impedance values ​​of the data points in the second adjustment segment. The dielectric constant of the first dielectric layer of the stripline is . The dielectric constant of the second dielectric layer of the stripline is . H 1 The thickness of the first dielectric layer of the stripline. H 2 The thickness of the second dielectric layer of the stripline. W This refers to the line width of the line area corresponding to the second adjustment section.

[0070] A schematic diagram of the strip structure is shown below. Figure 5 As shown.

[0071] In another exemplary embodiment of this application, the target impedance is 40Ω and the preset threshold is ±1Ω.

[0072] The principle behind optimizing impedance fluctuations by adjusting the linewidth in the above embodiments is as follows:

[0073] Where impedance is discontinuous, impedance fluctuations are reduced by adjusting the trace width. Adjusting the trace width changes the impedance of the trace; the narrower the trace width, the higher the impedance and the more it resembles inductive characteristics; the wider the trace width, the lower the impedance and the more it resembles capacitive characteristics. According to transmission line theory, the relationship between trace width and impedance depends on the type of circuit. The horizontal transmission line types on printed circuit boards are: microstrip lines on the surface and striplines on the inner layers, as shown in the schematic diagram below. Figure 4 , Figure 5 As shown.

[0074] For circuit boards with gold fingers, the gold finger area is generally wider than the signal lines on the circuit board, exhibiting a more capacitive characteristic. Therefore, it needs to be adjusted using a more inductive characteristic to make its impedance close to the characteristic impedance within the same adjustment range. The relationship is as follows:

[0075] (3);

[0076] Where Z is impedance, L is inductance, and C is capacitance.

[0077] The adjustment area is divided based on the impedance fluctuation time-domain data, so that each adjustment area (first adjustment area and second adjustment area) includes two line segments, such as... Figure 3 The diagram shows the adjusted circuit, which includes four adjustment regions: L1, L2, L3, and L4. Each adjustment region contains two line segments of different widths. The wider line segment has lower impedance and is biased towards capacitive characteristics, while the narrower line segment has higher impedance and is biased towards inductive characteristics. The complementary structure of each region optimizes impedance fluctuations in different regions, ultimately resulting in a circuit with smaller impedance fluctuations.

[0078] The result of the adjustment can be tested by an instrument for testing impedance, for example, using TDR (Time Domain Reflectometry), also known as time domain reflectometer.

[0079] In order to verify the effect of the impedance fluctuation optimization method described in the above embodiments, the scheme described in the above embodiments is used as a test example for the optimization of the same target line, and two comparative examples are set up to test and compare the effects:

[0080] The test is for a DDR5 (Double Data Rate 5 Synchronous Dynamic Random-Access Memory) memory line with a gold finger, and the line type is a microstrip line. The target impedance generally refers to the characteristic impedance of the system, and the characteristic impedance of the single-ended DDR5 is 40Ω. Therefore, the target impedance value Z0 is set to 40Ω, and the threshold value for judging impedance fluctuation is ±1Ω. That is, for the line segment with continuous impedance of 40Ω±1Ω, no line width adjustment is performed.

[0081] As shown in FIG. 1, it is a schematic diagram of the structure after adjustment of the test example. The adjustment process includes: Figure 3

[0082] The time domain data of impedance fluctuation measured by the time domain reflectometer is used to calculate the measured impedance values of the point A to point B segment area, the point B to point C segment area, the point C to point D segment area, the point D to point E segment area, and the point E to point F segment area, which are R1, R2, R3, R4, and R5, respectively. The corresponding equivalent times are t1, t2, t3, t4, and t5, respectively.

[0083] S1, adjusting the point B to point C segment area:

[0084] Z0(t1+t2)=R1·t1+R2’·t2;

[0085] Wherein R2’ is the average value of the measured impedance values of the data points of the adjusted point B to point C segment area, and the corresponding line width W1 is calculated by formula (1).

[0086] S2, adjusting the point C to point D segment area:

[0087] Z0(t2+t3)=R2’·t2+R3’·t3;

[0088] Wherein R3’ is the average value of the measured impedance values of the data points of the adjusted point C to point D segment area, and the corresponding line width W2 is calculated by formula (1).

[0089] S3, adjusting the point D to point E segment area:

[0090] ​Z0(t3+t4)=R3'·t3+R4'·t4;

[0091] Wherein, R4' is the average of the measured impedance values of the data points in the segment region from point D to point E after adjustment, and the corresponding line width W3 is calculated by formula (1).

[0092] S4, adjusting the segment region from point E to point F:

[0093] Z0(t4+t5)=R4'·t4+R5'·t5;

[0094] Wherein, R5' is the average of the measured impedance values of the data points in the segment region from point E to point F after adjustment, and the corresponding line width W4 is calculated by formula (1).

[0095] Adjust the line width of the corresponding segment according to the values of W1, W2, W3 and W4 to obtain the adjusted line.

[0096] Comparative Example 1, as shown in Figure 6 , the line width of the first adjustment segment is adjusted to the average of the gold finger line width and the communication line width of the communication non-adjustment region, which is the line width adjustment diagram of comparative example 1, wherein Z is the first adjustment segment, corresponding to Figure 3 , the region from point B to point F.

[0097] Comparative Example 2, as shown in Figure 7 , a plurality of second adjustment segments are obtained according to the same region division method as in the embodiment, which are Z1 segment, Z2 segment, Z3 segment and Z4 segment (corresponding to Y2 segment, Y3 segment Y4 segment and Y5 segment in Figure 3 , respectively), according to experience, the line widths of Z1 segment, Z2 segment, Z3 segment and Z4 segment are adjusted to 1 / 3, 1 / 2, 1 / 3 and 1 / 2 of the gold finger line width, respectively, and the specific data are shown in Figure 7 .

[0098] As shown in Figure 8 , the impedance fluctuation curves of the test example, comparative example 1 and comparative example 2 after adjustment are shown, during the test, the position of the injected signal is deviated from the side of the communication line of the circuit board, the time axis 25ps corresponds to the position of the gold finger center point, and the time axis 25ps~175ps corresponds to the data points of the first adjustment segment impedance fluctuation data.

[0099] As shown in Figure 9 , it is the enlarged view of the data corresponding to the time axis 25~175ps shown in Figure 8 .

[0100] Test results: the difference between the TDR transient impedance in the range of 25ps~175ps and the target impedance Z0(40Ω) is calculated, and the negative difference represents lower than Z0, the impedance in this range is low (lower than 40Ω), the average value of the sum of the difference is: the average value of the fluctuation of the comparative example 1 is-8.879Ω; the average value of the fluctuation of the comparative example 2 is-5.816Ω; the average value of the fluctuation of the test example is-0.9756Ω.

[0101] The application has small impedance fluctuation, and reasonable transmission line design value can be easily obtained through simulation.

[0102] Based on the same inventive concept, the application also provides an impedance fluctuation optimization device for implementing the above-mentioned impedance fluctuation optimization method. The implementation scheme of the device for solving the problem is similar to the implementation scheme described in the above method, so the specific limitations in one or more impedance fluctuation optimization device embodiments provided below can refer to the limitations of the impedance fluctuation optimization method in the foregoing, which will not be described here.

[0103] In an exemplary embodiment, as shown in Figure 10 An impedance fluctuation optimization device is provided, including:

[0104] A data acquisition module is configured to inject a simulation signal to the starting position of the fixed section of the target line to acquire impedance fluctuation time domain data of the target line (in another embodiment, the data acquisition module is a time domain reflectometer).

[0105] A processing module is configured to execute any of the above-mentioned impedance fluctuation optimization methods.

[0106] In an exemplary embodiment, a computer device can be a server or a terminal, and its internal structure diagram can be as shown in Figure 11 The computer device includes a processor, a memory, an input / output interface (I / O) and a communication interface. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The database of the computer device is configured to store impedance fluctuation optimization data. The input / output interface of the computer device is configured to exchange information between the processor and external devices. The communication interface of the computer device is configured to communicate with external terminals through network connection. The computer program is executed by the processor to implement an impedance fluctuation optimization method.

[0107] Those skilled in the art can understand that Figure 11 The structure shown in the figure is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components. In an exemplary embodiment, a computer device is provided, including a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the steps in the above method embodiments.

[0108] In an exemplary embodiment, a computer readable storage medium is provided, storing a computer program, which is executed by a processor to implement the steps in the above method embodiments.

[0109] In an exemplary embodiment, a computer program product is provided, including a computer program, which is executed by a processor to implement the steps in the above method embodiments.

[0110] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in the present application are all information and data authorized by the user or authorized by all parties, and the collection, use and processing of related data need to comply with relevant regulations.

[0111] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to a memory, a database or other medium used in the embodiments provided in the present application can include at least one of a non-volatile and a volatile memory. The non-volatile memory can include a read-only memory (ROM), a magnetic tape, a floppy disk, a flash memory, an optical storage, a high-density embedded non-volatile memory, a resistive random access memory (ReRAM), a magnetoresistive random access memory (MRAM), a ferroelectric random access memory (FRAM), a phase change memory (PCM), a graphene memory, etc. The volatile memory can include a random access memory (RAM) or an external cache memory, etc. As an illustration but not limitation, the RAM can be in various forms, such as a static random access memory (SRAM) or a dynamic random access memory (DRAM), etc.

[0112] The database involved in the embodiments provided in the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a blockchain, etc., without being limited thereto. The processor involved in the embodiments provided in the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0113] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not exist contradictory, they should be considered as the scope of the present application.

[0114] The principles and implementation modes of the present application are described by applying specific examples in the present application. The above-mentioned embodiments are only used to help understand the method and its core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation mode and application range can be changed. In conclusion, the content of the present application should not be understood as a limitation.

Claims

1. An impedance fluctuation optimization method, characterized by, The impedance fluctuation optimization method comprises: Obtaining impedance fluctuation time domain data and a target impedance value of a target line, the target line comprising a fixed section and a non-fixed section; the impedance fluctuation time domain data comprising a plurality of data points varying with time sequence; each data point comprising a measurement time and a measurement impedance value corresponding to the measurement time; Filtering the impedance fluctuation time domain data of the non-fixed section to obtain a first filtered point, a fluctuation end point and an adjustment end point; the first filtered point being a data point with a measurement impedance value equal to the target impedance value; the fluctuation end point being a last data point with a difference between the measurement impedance value and the target impedance value exceeding a preset threshold; the adjustment end point being a first filtered point after the fluctuation end point; Constructing a first adjustment region and a second adjustment region; the first adjustment region being a region constructed based on the fixed section and a second adjustment section adjacent to the fixed section; the second adjustment region being a region constructed based on two adjacent second adjustment sections; Adjusting the measurement impedance values of the second adjustment sections in the first adjustment region and the second adjustment region respectively with the target impedance value as a target to obtain updated first adjustment region and second adjustment region; Calculating the line width of each second adjustment section according to the updated first adjustment region and the second adjustment region; Wherein, adjusting the measurement impedance values of the second adjustment sections in the first adjustment region and the second adjustment region respectively with the target impedance value as a target to obtain updated first adjustment region and second adjustment region, specifically comprising: For the first adjustment region, keeping the measurement impedance values of the data points in the fixed section unchanged, adjusting the measurement impedance values of all data points in the second adjustment section, so that the average impedance of the data points in the first adjustment region is equal to the target impedance value, to obtain the updated first adjustment region; For the first second adjustment region, updating the data points in the first second adjustment section of the second adjustment region to the data points in the second adjustment section of the updated first adjustment region, keeping the data points in the updated first second adjustment section of the second adjustment region unchanged, adjusting the measurement impedance values of all data points in the second second adjustment section of the second adjustment region, so that the average impedance of the data points in the corresponding second adjustment region is equal to the target impedance value, to obtain the corresponding updated second adjustment region; For the nth second adjustment region, updating the data points in the first second adjustment section of the nth second adjustment region to the data points in the second adjustment section of the updated (n-1)th second adjustment region, keeping the data points in the updated first second adjustment section of the nth second adjustment region unchanged, adjusting the measurement impedance values of all data points in the second second adjustment section of the nth second adjustment region, so that the average impedance of the data points in the corresponding nth second adjustment region is equal to the target impedance value, to obtain the corresponding updated nth second adjustment region; wherein, n≥2. Calculating the line width of each second adjustment section according to the updated first adjustment region and the second adjustment region, specifically comprising:

2. The impedance fluctuation optimization method of claim 1, wherein, Obtaining a target line type; ​ According to the target line type and the updated first adjustment region and second adjustment region, a line width of each second adjustment segment is calculated.

3. The impedance fluctuation optimization method of claim 2, wherein, According to the target line type and the updated first adjustment region and second adjustment region, a line width of each second adjustment segment is calculated, specifically including: When the target line type is a microstrip line, a line width of each second adjustment segment is calculated according to the following formula: ； wherein, Z an average value of the measured impedance values of the data points of the second adjustment section, is a dielectric constant, H is a thickness of the first dielectric layer of the microstrip line, W is a line width of the line region corresponding to the second adjustment section.

4. The impedance fluctuation optimization method of claim 2, wherein, According to the target line type and the updated first adjustment region and second adjustment region, a line width of each second adjustment segment is calculated, specifically including: When the target line type is a stripline, a line width of each second adjustment segment is calculated according to the following formula: wherein, Z an average value of the measured impedance values of the data points of the second adjustment section, a dielectric constant of the stripline first dielectric layer, a dielectric constant of the stripline second dielectric layer, H 1 a thickness of the stripline first dielectric layer, H 2 a thickness of the stripline second dielectric layer, W a line width of the line region corresponding to the second adjustment section.

5. The impedance fluctuation optimization method of claim 1, wherein, The target impedance is 40Ω, and the preset threshold is ±1Ω.

6. An impedance fluctuation optimization device, characterized by, Including: The data acquisition module is configured to inject a simulation signal to a starting position of a fixed segment of the target line to obtain impedance fluctuation time domain data of the target line. The processing module is configured to execute the impedance fluctuation optimization method in any one of claims 1-5.

7. A computer device comprising: A memory, a processor, and a computer program stored in the memory and capable of running on the processor, characterized in that the processor executes the computer program to implement the impedance fluctuation optimization method in any one of claims 1-5.

8. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the impedance fluctuation optimization method in any one of claims 1-5.

9. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the impedance fluctuation optimization method in any one of claims 1-5.

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