Semiconductor structure and method of fabrication, semiconductor laser

Abstract

The application provides a semiconductor structure and a preparation method and a semiconductor laser, and relates to the field of lasers. The semiconductor structure comprises a substrate, a first light-emitting structure and a second light-emitting structure; the first light-emitting structure and the second light-emitting structure are arranged on the same side of the substrate, at least part of the first light-emitting structure is arranged in the same layer and the same material as at least part of the second light-emitting structure; and the light-emitting direction of the first light-emitting structure forms an included angle with the light-emitting direction of the second light-emitting structure. The application can reduce the volume of the semiconductor structure and improve the integration of the semiconductor structure.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of lasers, in particular to a semiconductor structure and a preparation method, and a semiconductor laser. BACKGROUND

[0002] Semiconductor lasers are an important part of optical communication, 3D sensing and multispectral imaging. With the increasing demand for light emission, semiconductor structures capable of realizing double-band light emission are also increasingly widely used. The semiconductor structure usually includes two independently arranged light emission structures, so as to realize double-band light emission through the two light emission structures. However, the independently arranged two light emission structures have a complex preparation process, a large volume of the semiconductor structure, and poor integration of the semiconductor structure. SUMMARY

[0003] Embodiments of the present application provide a semiconductor structure and a preparation method, and a semiconductor laser, to solve the problems of a large volume of the semiconductor structure and poor integration of the semiconductor structure.

[0004] The semiconductor structure provided by the embodiments of the present application includes a substrate, a first light emission structure and a second light emission structure.

[0005] The first light emission structure and the second light emission structure are arranged on the same side of the substrate.

[0006] At least part of the first light emission structure and at least part of the second light emission structure are arranged in the same layer and of the same material. The light emission direction of the first light emission structure and the light emission direction of the second light emission structure form an included angle.

[0007] By adopting the above technical solution, the first light emission structure and the second light emission structure are arranged on the same side of the substrate, and the first light emission structure and the second light emission structure can be used to emit light, thereby realizing double-band light emission. The light emission direction of the first light emission structure and the light emission direction of the second light emission structure form an included angle, so that the light emission processes of the first light emission structure and the second light emission structure do not interfere with each other.

[0008] At least part of the first light emission structure and at least part of the second light emission structure are arranged in the same layer and of the same material, so that at least part of the first light emission structure and at least part of the second light emission structure can be integrally formed. Compared with the two independently arranged light emission structures in the related art, the integrally formed first light emission structure and the second light emission structure can simplify the preparation process of the semiconductor structure, reduce the volume of the semiconductor structure, and improve the integration of the semiconductor structure.

[0009] In some possible implementation manners, the semiconductor structure further includes a common electrode.

[0010] The common electrode is arranged on a side of the substrate away from the first light-emitting structure and the second light-emitting structure; the common electrode is connected to the first light-emitting structure, and the common electrode is connected to the second light-emitting structure.

[0011] In some possible implementation manners, the first light-emitting structure comprises a first resonant cavity and a first electrode; and the second light-emitting structure comprises a second resonant cavity and a second electrode.

[0012] The first resonant cavity and the second resonant cavity are arranged on the substrate in a spaced manner, and are arranged in a same layer and a same material.

[0013] The first electrode is arranged in the first resonant cavity, and the first electrode is used in cooperation with the common electrode; and the second electrode is arranged in the second resonant cavity, and the second electrode is used in cooperation with the common electrode.

[0014] In some possible implementation manners, the first resonant cavity comprises a first reflector, a first gain layer and a second reflector arranged in a stacked manner; and the first electrode is arranged between the first gain layer and the first reflector.

[0015] The second resonant cavity comprises a second gain layer, and the second electrode is arranged on a side of the second gain layer away from the substrate.

[0016] In some possible implementation manners, the second light-emitting structure comprises a third reflector and a fourth reflector arranged in a first direction, the third reflector is located on a side away from the second resonant cavity, and the fourth reflector is located on a side close to the second resonant cavity.

[0017] In some possible implementation manners, the third reflector is a multilayer structure, and the multilayer structure is arranged in a stacked manner in the first direction.

[0018] In some possible implementation manners, the substrate is provided with an isolation groove, and the isolation groove separates the substrate to form a first substrate and a second substrate.

[0019] The first light-emitting structure is arranged on the first substrate, and the second light-emitting structure is arranged on the second substrate.

[0020] In some possible implementation manners, the isolation groove is provided with a filling part, a first high-resistance layer and a second high-resistance layer.

[0021] A first surface of the filling part faces the first substrate, and the first surface of the filling part is connected to the first high-resistance layer; a second surface of the filling part faces the second substrate, and the second surface of the filling part is connected to the second high-resistance layer.

[0022] Embodiments of the present application provide a preparation method of a semiconductor structure, comprising:

[0023] providing a substrate;

[0024] forming a light-out structure base on the substrate;

[0025] forming a first light-out structure and a second light-out structure through the light-out structure base; the light-out direction of the first light-out structure is perpendicular to the plane where the substrate is located, and the light-out direction of the second light-out structure is parallel to the plane where the substrate is located.

[0026] In some possible implementation manners, the light-out structure base is formed on the substrate, comprising:

[0027] forming a resonant cavity base on the substrate;

[0028] removing part of the resonant cavity base, and the remaining part of the resonant cavity base forms a first resonant cavity and a second resonant cavity which are arranged at intervals;

[0029] forming a first electrode in the first resonant cavity, and the first resonant cavity and the first electrode form the first light-out structure; forming a second electrode in the second resonant cavity, and the second resonant cavity and the second electrode form the second light-out structure.

[0030] In some possible implementation manners, the method further comprises:

[0031] forming an isolation groove in the substrate; the isolation groove separates the substrate to form a first substrate and a second substrate, the first light-out structure is arranged in the first substrate, and the second light-out structure is arranged in the second substrate;

[0032] forming a filling part, a first high-resistance layer and a second high-resistance layer in the isolation groove;

[0033] a first surface of the filling part faces the first substrate, and the first surface of the filling part is connected with the first high-resistance layer; a second surface of the filling part faces the second substrate, and the second surface of the filling part is connected with the second high-resistance layer.

[0034] Embodiments of the present application provide a semiconductor laser, comprising any one of the semiconductor structures described above.

[0035] Since the semiconductor laser comprises any one of the semiconductor structures described above, the semiconductor laser has the advantages of any one of the semiconductor structures described above, and specific details can be referred to the related description above, which will not be described here again. BRIEF DESCRIPTION OF DRAWINGS

[0036] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the application and, together with the description, further serve to explain the principles of the application.

[0037] Figure 1 A structural schematic diagram of a semiconductor structure provided for an embodiment of the application;

[0038] Figure 2 A top view structural schematic diagram of a semiconductor structure provided for an embodiment of the application;

[0039] Figure 3 A flowchart of a preparation method of a semiconductor structure provided for an embodiment of the application.

[0040] Reference signs:

[0041] 100, substrate; 110, isolation trench; 111, filling part; 112, first high resistance layer; 113, second high resistance layer; 120, first substrate; 130, second substrate;

[0042] 200, first light-out structure; 210, first resonant cavity; 211, first mirror; 212, first gain layer; 213, second mirror; 214, oxidation confinement layer; 220, first electrode;

[0043] 300, second light-out structure; 310, second resonant cavity; 311, second gain layer; 320, second electrode; 330, third mirror; 340, fourth mirror;

[0044] 400, common electrode.

[0045] Through the above drawings, the specific embodiments of the application have been shown, and will be described in more detail hereinafter. These drawings and textual descriptions are not intended to limit the scope of the concept of the application by any means, but to illustrate the concept of the application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0046] Semiconductor lasers are an important part of optical communication, 3D sensing and multispectral imaging. With the increasing demand for light emission, semiconductor structures capable of realizing double-band light emission are also being used more and more widely,

[0047] The semiconductor structure usually includes two light-out structures arranged independently, so as to realize double-band light emission through the two light-out structures. However, the preparation process of the two light-out structures arranged independently is complex, the volume of the semiconductor structure is large, and the integration of the semiconductor structure is poor.

[0048] To solve the above technical problems, the embodiment of the present application provides a semiconductor structure, comprising a substrate, a first light-emitting structure and a second light-emitting structure; the first light-emitting structure and the second light-emitting structure are arranged on the same side of the substrate; at least part of the first light-emitting structure and at least part of the second light-emitting structure are arranged in the same layer and the same material; the light-emitting direction of the first light-emitting structure and the light-emitting direction of the second light-emitting structure form an included angle.

[0049] In the semiconductor structure, the first light-emitting structure and the second light-emitting structure are arranged on the same side of the substrate, the first light-emitting structure and the second light-emitting structure can be used to emit light, thereby realizing double-band light emission, the light-emitting direction of the first light-emitting structure and the light-emitting direction of the second light-emitting structure form an included angle, so that the light-emitting processes of the first light-emitting structure and the second light-emitting structure do not interfere with each other.

[0050] At least part of the first light-emitting structure and at least part of the second light-emitting structure are arranged in the same layer and the same material, thereby enabling at least part of the first light-emitting structure and at least part of the second light-emitting structure to be integrally formed, compared with two light-emitting structures arranged independently in the related art, the integrally formed first light-emitting structure and the second light-emitting structure can simplify the preparation process of the semiconductor structure, and can reduce the volume of the semiconductor structure and improve the integration of the semiconductor structure.

[0051] The exemplary embodiments will be described in detail herein below with reference to the drawings. In the following description, the same numbers in different drawings represent the same or similar elements unless otherwise represented. The embodiments described in the following exemplary embodiments do not represent all the embodiments consistent with the present application. Rather, they are merely examples of devices consistent with some aspects of the present application as detailed in the appended claims.

[0052] In the embodiments of the present application, the terms "first", "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the embodiments of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0053] In addition, in the embodiments of the present application, the orientations or positional relationships indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and are not intended to indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0054] In the embodiments of this application, unless otherwise explicitly specified and limited, the terms "installation", "connection", "linking", "fixing", etc., should be interpreted broadly. For example, they can be fixed connections, detachable connections, or integrated; they can be direct connections or indirect connections through an intermediate medium; they can be connections within two components or interactions between two components.

[0055] In embodiments of this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, article, or apparatus that includes that element.

[0056] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0057] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0058] See Figure 1 and Figure 2 This application provides a semiconductor structure, which may include a substrate 100, a first light-emitting structure 200, and a second light-emitting structure 300.

[0059] The substrate 100 can serve as the physical support base for semiconductor structures and the starting platform for electrical connections, providing a lattice-matched interface for subsequent epitaxial growth.

[0060] The substrate 100 can be made of III-V compound semiconductor materials, such as gallium arsenide (GaAs), indium phosphide (InP), or germanium (Ge) single crystal materials. The gallium arsenide (GaAs) substrate 100 is suitable for growing material systems such as aluminum gallium arsenide (AlGaAs) and indium gallium arsenide phosphide (InGaAsP), which can simultaneously meet the epitaxial requirements of near-infrared and short-wave infrared lasers.

[0061] The first light extraction structure 200 and the second light extraction structure 300 can be two independent light-emitting units integrated on the same substrate 100. The first light extraction structure 200 and the second light extraction structure 300 can be arranged on the same side of the substrate 100. The arrangement of the first light extraction structure 200 and the second light extraction structure 300 on the same side of the substrate 100 can make the semiconductor structure maintain a compact planar layout, providing a basis for the miniaturization of the semiconductor structure.

[0062] At least part of the first light extraction structure 200 and at least part of the second light extraction structure 300 can be arranged in the same layer and with the same material. The first light extraction structure 200 and the second light extraction structure 300 arranged in the same layer and with the same material can be formed synchronously by a single epitaxial growth process, ensuring the integrity and performance consistency of the material interface, so that the first light extraction structure 200 and the second light extraction structure 300, although having different optical resonant cavity structures and light extraction directions, share the same epitaxial growth basis, providing a material level basis for monolithic integration of the semiconductor structure.

[0063] The part arranged in the same layer and with the same material can adopt a compound semiconductor material, such as a III-V semiconductor compound, such as aluminum gallium arsenide (AlGaAs), indium gallium arsenide phosphide (InGaAsP), or indium gallium phosphide (InGaP), etc. The continuous epitaxial layer stack is formed on the substrate 100 by metal organic chemical vapor deposition epitaxial growth technology.

[0064] The light extraction direction of the first light extraction structure 200 and the light extraction direction of the second light extraction structure 300 can form an included angle. The light extraction direction of the first light extraction structure 200 and the light extraction direction of the second light extraction structure 300 form an included angle, which can realize multi-dimensional light field output and flexibility of spatial layout to meet the demand of light sources with different propagation directions.

[0065] The included angle between the light extraction direction of the first light extraction structure 200 and the light extraction direction of the second light extraction structure 300 can be orthogonal, that is, the included angle between the two light extraction directions is 90 degrees. Alternatively, the included angle can be designed to other angles according to application requirements, such as 45 degrees, 60 degrees, etc.

[0066] When the included angle between the light extraction direction of the first light extraction structure 200 and the light extraction direction of the second light extraction structure 300 is 90 degrees, the mutual interference between the two-band laser outputs can be eliminated. The vertical beam of the first light extraction structure 200 and the horizontal beam of the second light extraction structure 300 form a right angle relationship, so that the two light paths have no physical overlapping point, avoiding direct optical coupling.

[0067] According to the embodiments of the present application, the first light output structure 200 and the second light output structure 300 are arranged on the same side of the substrate 100, and the first light output structure 200 and the second light output structure 300 can be used to emit light, thereby realizing double-band light emission. The light emission directions of the first light output structure 200 and the second light output structure 300 form an included angle, so that the light emission processes of the first light output structure 200 and the second light output structure 300 do not interfere with each other.

[0068] At least part of the first light output structure 200 and at least part of the second light output structure 300 are arranged in the same layer and of the same material, so that at least part of the first light output structure 200 and the second light output structure 300 can be integrally formed. The integrally formed first light output structure 200 and the second light output structure 300 can simplify the preparation process of the semiconductor structure, reduce the volume of the semiconductor structure, and improve the integration of the semiconductor structure.

[0069] As a specific embodiment of the present application, the semiconductor structure can further include a common electrode 400. The common electrode 400 can be arranged on the side of the substrate 100 away from the first light output structure 200 and the second light output structure 300. The common electrode 400 can be connected to the first light output structure 200. The common electrode 400 can be connected to the second light output structure 300.

[0070] The common electrode 400 is arranged on the other side surface of the substrate 100 away from the light output structure, can form an ohmic contact with the substrate 100, and utilize the conductive properties of the substrate 100 to uniformly distribute the current to the first light output structure 200 and the second light output structure 300.

[0071] The common electrode 400 can be a gold germanium nickel (AuGeNi) alloy or a multi-layer metal composite structure such as titanium platinum gold (TiPtAu), to form a low-resistance ohmic contact.

[0072] The common electrode 400 forms a complete current injection path together with the electrodes respectively formed by the first light output structure 200 and the second light output structure 300, which can reduce the number of independent electrodes, and reduce the complexity of the device and the difficulty of wire bonding.

[0073] As a specific embodiment of the present application, the first light output structure 200 can include a first resonant cavity 210 and a first electrode 220. The second light output structure 300 can include a second resonant cavity 310 and a second electrode 320. The first resonant cavity 210 and the second resonant cavity 310 can form optical resonance and amplification of different wavebands, and the first electrode 220 and the second electrode 320 can provide an interface for independent electrical injection and control, so that the first light output structure 200 and the second light output structure 300 can realize asynchronous modulation and independent operation.

[0074] The first resonant cavity 210 and the second resonant cavity 310 can be spaced apart on the substrate 100. The first resonant cavity 210 and the second resonant cavity 310 spaced apart on the substrate 100 can achieve physical isolation of functions, and independent current injection and control.

[0075] The first resonant cavity 210 and the second resonant cavity 310 can be disposed in the same layer and of the same material. The same layer and the same material can ensure that the first resonant cavity 210 and the second resonant cavity 310 have consistent optical characteristic parameters, such as refractive index, optical absorption coefficient, and thermo-optic coefficient, which is conducive to achieving precise optical mode control and wavelength stability. The one-piece first resonant cavity 210 and the second resonant cavity 310 can simplify the preparation process of the semiconductor structure, and can reduce the volume of the semiconductor structure and improve the integration of the semiconductor structure.

[0076] The first electrode 220 can be disposed on the first resonant cavity 210, and the first electrode 220 is used in cooperation with the common electrode 400. The second electrode 320 can be disposed on the second resonant cavity 310, and the second electrode 320 is used in cooperation with the common electrode 400. The first electrode 220 and the common electrode 400 can form a current injection loop of the first resonant cavity 210, and the second electrode 320 and the common electrode 400 can form a current injection loop of the second resonant cavity 310.

[0077] The first electrode 220 can be disposed as a ring electrode. The ring-shaped aperture of the first electrode 220 can be formed by an oxidation process in a 420℃ wet nitrogen atmosphere for 15 minutes. The water vapor in the wet nitrogen atmosphere can act as an oxidation reaction medium and selectively react with the aluminum component in the aluminum gallium arsenide (AlGaAs) material to generate aluminum oxide (Al2O3) insulation structure, that is, the oxidation confinement layer 214.

[0078] The oxidation process starts from the sidewall and proceeds laterally inward. By controlling the temperature and time parameters, the oxidation front can be stopped at a predetermined position to form a circular current aperture with a diameter of 8μm. The oxidation confinement layer 214 has a very high resistivity and a lower refractive index, which can provide both current confinement and optical confinement functions.

[0079] As a specific embodiment of the present application, the first resonant cavity 210 can include a first mirror 211, a first gain layer 212, and a second mirror 213 stacked in sequence. The first mirror 211 can act as an output coupling mirror, allowing specific wavelength laser output while providing partial reflection. The first gain layer 212 can act as an active region for photon generation and stimulated amplification. The second mirror 213 can act as a bottom reflector of the first resonant cavity 210, providing high reflectivity optical feedback, and cooperating with the first mirror 211 to form a stable optical resonant environment.

[0080] ​The first reflector 211 and the second reflector 213 can be formed into a distributed Bragg reflector structure by deposition, which may contain silicon nitride ( ) and silicon dioxide ( Combination of media materials such as )

[0081] The first gain layer 212 can adopt an aluminum gallium arsenide (AlGaAs) multi-quantum well structure. The material composition and thickness of the quantum well layer and the barrier layer can be adjusted as needed to achieve the required emission wavelength.

[0082] The first electrode 220 can be disposed between the first gain layer 212 and the first reflector 211. When an external bias voltage is applied between the first electrode 220 and the common electrode 400, holes are injected from the first electrode 220 into the quantum well region of the first gain layer 212, and electrons are injected from the common electrode 400 through the second reflector 213, thus shortening the carrier transport path to the shortest possible length and significantly reducing carrier diffusion and recombination losses in inactive regions.

[0083] The second resonant cavity 310 may include a second gain layer 311, and the second electrode 320 may be disposed on the side of the second gain layer 311 away from the substrate 100.

[0084] By using the first reflector 211, the first gain layer 212, and the second reflector 213 arranged in the first resonant cavity 210, when a bias voltage is applied between the first electrode 220 and the common electrode 400, the first electrode 220 and the first light-emitting structure 200 work together. Holes are injected from the first electrode 220 and flow vertically to the first gain layer 212 through the aperture of the oxide confinement layer 214. At the same time, electrons are injected from the common electrode 400 through the substrate 100 and the second reflector 213 into the first gain layer 212, recombine with holes in the quantum well to generate photons.

[0085] As a specific embodiment of this application, the second light-emitting structure 300 may include a third reflector 330 and a fourth reflector 340 arranged along a first direction. The third reflector 330 may be located on the side away from the second resonant cavity 310, and the fourth reflector 340 may be located on the side closer to the second resonant cavity 310. The third reflector 330 and the fourth reflector 340 may serve as optical output interfaces of the second light-emitting structure 300, used to guide and optimize the laser beam generated by the second resonant cavity 310. The end of the third reflector 330 away from the second resonant cavity 310 may be provided with a light-emitting end for emitting the laser beam. The light-emitting direction of the light-emitting end may be away from the second resonant cavity 310.

[0086] The third reflector 330 can be a multi-layered structure. The multi-layered structure can be stacked sequentially along the first direction.

[0087] As a specific embodiment of the present application, the substrate 100 can be provided with an isolation trench 110. The isolation trench 110 separates the substrate 100 to form a first substrate 120 and a second substrate 130. The first light extraction structure 200 can be disposed on the first substrate 120, and the second light extraction structure 300 can be disposed on the second substrate 130.

[0088] The isolation trench 110 penetrates through the substrate 100, and can separate the originally continuous semiconductor material into the first substrate 120 and the second substrate 130 that are isolated from each other, form a high-resistance isolation region, and achieve electrical isolation of the substrate 100, thereby providing a physical barrier for independent operation of the first light extraction structure 200 in the first substrate 120 and the second light extraction structure 300 in the second substrate 130.

[0089] As a specific embodiment of the present application, the isolation trench 110 can be provided with a filling portion 111, a first high-resistance layer 112, and a second high-resistance layer 113.

[0090] The filling portion 111 can be a core component of the isolation trench 110, and can bear the functions of structural support and physical isolation, and serve as a light absorption barrier to block stray light. The filling portion 111 can be made of a dielectric material such as silicon dioxide (SiO2), which has a high resistivity, a low dielectric constant, and good mechanical stability.

[0091] The first high-resistance layer 112 and the second high-resistance layer 113 can serve as a supplemental isolation layer to provide electrical isolation and carrier recombination centers. The first high-resistance layer 112 and the second high-resistance layer 113 can be formed by proton implantation or oxygen ion implantation technology to generate deep level defects in semiconductor materials such as gallium arsenide (GaAs) or indium phosphide (InP), which are used to capture carriers and significantly improve the resistivity of the material. The resistivity of the first high-resistance layer 112 and the second high-resistance layer 113 can be higher than 1000 Ω•cm, and the capacitance value can be less than 0.1 pF.

[0092] The first surface of the filling portion 111 can face the first substrate 120, and the first surface of the filling portion 111 can be connected with the first high-resistance layer 112. The first surface of the filling portion 111 is connected with the first high-resistance layer 112 to form an isolation interface facing the first substrate 120.

[0093] The second surface of the filling portion 111 can face the second substrate 130, and the second surface of the filling portion 111 can be connected with the second high-resistance layer 113. The second surface of the filling portion 111 is connected with the second high-resistance layer 113 to form an isolation interface facing the second substrate 130.

[0094] ​​When the first light output structure 200 and the second light output structure 300 are powered on, the first electrode 220 and the second electrode 320 apply bias voltage respectively, and a potential difference between the first substrate 120 and the second substrate 130 can be generated. At this time, the carriers trying to cross the isolation trench 110 first encounter the barrier of the first high resistance layer 112 or the second high resistance layer 113. The deep level defect centers in the first high resistance layer 112 and the second high resistance layer 113 consume most of the carriers trying to cross through the carrier trapping and recombination mechanism. When the remaining carriers continue to migrate to the filling part 111, they face the high impedance barrier of the medium material such as silicon dioxide ( ) or silicon nitride ( ).

[0095] In summary, when the device is in working state, the common electrode 400 is connected to the circuit system as a common reference electrode, providing a unified potential reference for the first light output structure 200 and the second light output structure 300. The first electrode 220 and the second electrode 320 receive independent driving signals respectively, so that the first resonant cavity 210 and the second resonant cavity 310 can work under the same or different bias conditions.

[0096] In the first light output structure 200, current is injected from the first electrode 220, passes through the path between the first gain layer 212 and the first mirror 211, and enters the active region of the first resonant cavity 210. At the same time, electrons are injected from the common electrode 400 through the substrate 100 and the second mirror 213, and recombine with holes in the quantum well of the first gain layer 212 to generate photons. These photons undergo multiple reflections and amplifications in the first mirror 211 and the second mirror 213, and finally form a laser output.

[0097] The isolation trench 110 and its internal structure continue to play an isolation role throughout the entire working process. The filling part 111 provides physical isolation and mechanical support, and the first high resistance layer 112 and the second high resistance layer 113 block possible leakage current paths, ensuring that the first substrate 120 and the second substrate 130 always remain electrically independent, so that the first light output structure 200 and the second light output structure 300 arranged thereon can work completely independently and do not interfere with each other.

[0098] The semiconductor structure supports multiple working modes. The first light output structure 200 and the second light output structure 300 can work synchronously to realize simultaneous output of double bands; alternately work to realize time division multiplexing; or use different modulation methods to meet the needs of complex application scenarios. The design of the included angle of the light output direction makes the output light beams naturally separate, which is convenient for subsequent optical system processing.

[0099] During the whole use process, the first resonant cavity 210 and the second resonant cavity 310 arranged in the same layer and the same material ensure the consistency of the performance of the two light-emitting structures, and the isolation groove 110 guarantees the independence of the work, which not only maintains the compactness and low cost advantage of the integrated device, but also provides the performance close to that of the discrete device.

[0100] Figure 3 A flowchart of a preparation method of a semiconductor structure is provided for the embodiments of the present application. As shown in the figure, the method can include: Figure 3

[0101] S301, providing a substrate.

[0102] The substrate can serve as a physical support basis and a starting platform for electrical connection of the semiconductor structure, and provide a lattice-matched interface for subsequent epitaxial growth.

[0103] The substrate can be a III-V compound semiconductor material, which can meet the epitaxial requirements of near-infrared and short-wave infrared band lasers, such as monocrystalline materials such as gallium arsenide (GaAs), indium phosphide (InP), or germanium (Ge). For example, the substrate can be gallium arsenide (GaAs) crystal orientation, and the size can be 0.8x0.8x0.35mm.

[0104] S302, forming a light-emitting structure basis on the substrate.

[0105] The formation of the light-emitting structure basis on the substrate can be formed by one-time epitaxial growth on the substrate by one-piece molding, and the multiple functional layers in the light-emitting structure basis can be continuously grown in the same epitaxial process without segmentation or bonding.

[0106] The formation of the light-emitting structure basis on the substrate can include:

[0107] forming a resonant cavity basis on the substrate;

[0108] removing part of the resonant cavity basis, and the remaining part of the resonant cavity basis forms the first resonant cavity and the second resonant cavity arranged at intervals;

[0109] forming a first electrode in the first resonant cavity, and the first resonant cavity and the first electrode form a first light-emitting structure; forming a second electrode in the second resonant cavity, and the second resonant cavity and the second electrode form a second light-emitting structure.

[0110] The method of removing part of the resonant cavity basis can include etching, which divides the continuous resonant cavity basis material into two physically separated resonant cavity structures, i.e., the first resonant cavity and the second resonant cavity arranged at intervals.

[0111] The first resonant cavity and the second resonant cavity can refer to functional components in the semiconductor structure that realize light field oscillation and laser amplification.​

[0112] The first electrode can be composed of a ring-shaped gold (Au) base material, and the second electrode can be formed by diffusion of a zinc (Zn) base material.

[0113] In the first light-emitting structure, the first resonant cavity can form optical resonance and amplification of different wavebands, and the first electrode can provide an interface for independent electrical injection and control. In the second light-emitting structure, the second resonant cavity can form optical resonance and amplification of different wavebands, and the second electrode can provide an interface for independent electrical injection and control.

[0114] S303, forming a first light-emitting structure and a second light-emitting structure through a light-emitting structure base; the light-emitting direction of the first light-emitting structure is perpendicular to the plane where the substrate is located, and the light-emitting direction of the second light-emitting structure is parallel to the plane where the substrate is located.

[0115] The light-emitting direction of the first light-emitting structure is perpendicular to the light-emitting direction of the second light-emitting structure, and the 90-degree included angle formed thereby can eliminate crosstalk. The first light-emitting structure forms optical resonance and generates laser output in a direction perpendicular to the substrate, and the second light-emitting structure can be an edge-emitting laser structure, which forms optical resonance and generates laser output in a direction parallel to the substrate.

[0116] The center wavelength of the first light-emitting structure can be 850 nm, and the center wavelength of the second light-emitting structure can be 1310 nm.

[0117] The method can further include:

[0118] An isolation groove is formed in the substrate; the isolation groove separates the substrate to form a first substrate and a second substrate, the first light-emitting structure is arranged in the first substrate, and the second light-emitting structure is arranged in the second substrate.

[0119] A filling portion, a first high-resistance layer, and a second high-resistance layer are formed in the isolation groove.

[0120] A first surface of the filling portion faces the first substrate, and the first surface of the filling portion is connected with the first high-resistance layer; a second surface of the filling portion faces the second substrate, and the second surface of the filling portion is connected with the second high-resistance layer.

[0121] The isolation groove penetrates through the substrate, and can separate the originally continuous semiconductor material into the first substrate and the second substrate which are isolated from each other, form a high-resistance isolation area, and realize electrical isolation of the substrate, thereby providing a physical barrier for independent working of the first light-emitting structure in the first substrate and the second light-emitting structure in the second substrate.

[0122] The method of forming the isolation groove in the substrate can be forming the isolation groove in the substrate through the same photoetching and etching to separate the first substrate and the second substrate, the depth of the isolation groove can be 3-5 μm, and the width can be 1-2 μm.

[0123] After forming the isolation trench, protons can also be injected near the sidewall of the first resonant cavity and the sidewall of the second resonant cavity to form a first high-resistance layer and a second high-resistance layer, and then fill silicon dioxide between the first high-resistance layer and the second high-resistance layer to form a filling part to block photoelectric cross talk. The filling part can be a core component of the isolation trench, and can bear the functions of structural support and physical isolation, and can block stray light as a light absorption barrier.

[0124] The embodiment of the present application provides a semiconductor laser comprising the semiconductor structure.

[0125] The above technical description can refer to the drawings, which form a part of the present application, and the implementation according to the described embodiments is shown in the drawings. Although the embodiments are described in sufficient detail to enable those skilled in the art to implement the embodiments, the embodiments are non-limiting; thus, other embodiments can be used, and changes can be made without departing from the scope of the described embodiments.

[0126] In addition, the terms used in the above technical description are used to provide a thorough understanding of the described embodiments. However, it is not necessary to be too detailed to implement the described embodiments. Therefore, the above description of the embodiments is presented for explanation and description. The embodiments presented in the above description and the examples disclosed according to the embodiments are individually provided to add context and help understand the described embodiments. The above description is not used to be exhaustive or limit the described embodiments to the exact form of the present application. According to the above teachings, several modifications, selections and changes are possible. In some cases, well-known processing steps are not described in detail to avoid unnecessarily affecting the described embodiments.

[0127] The principles and implementation of the present application are described in the specific embodiments in the present application, and the above embodiment description is only used to help understand the core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation and application range will be changed, and the above description should not be understood as limiting the present application.

[0128] ​Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A semiconductor structure, characterized by, The semiconductor structure comprises a substrate, a first light-emitting structure and a second light-emitting structure; The first light-emitting structure and the second light-emitting structure are arranged on the same side of the substrate; At least part of the first light-emitting structure and at least part of the second light-emitting structure are arranged in the same layer and the same material; the light-emitting direction of the first light-emitting structure and the light-emitting direction of the second light-emitting structure form an included angle; The semiconductor structure further comprises a common electrode; The common electrode is arranged on the side of the substrate away from the first light-emitting structure and the second light-emitting structure; the common electrode is connected to the first light-emitting structure, and the common electrode is connected to the second light-emitting structure; The first light-emitting structure comprises a first resonant cavity and a first electrode; the second light-emitting structure comprises a second resonant cavity and a second electrode; The first resonant cavity and the second resonant cavity are arranged on the substrate in a spaced manner, and the first resonant cavity and the second resonant cavity are arranged in the same layer and the same material; The first electrode is arranged on the first resonant cavity, and the first electrode is used in cooperation with the common electrode; the second electrode is arranged on the second resonant cavity, and the second electrode is used in cooperation with the common electrode; The first resonant cavity comprises a first reflector, a first gain layer and a second reflector arranged in sequence; the first electrode is arranged between the first gain layer and the first reflector; The second resonant cavity comprises a second gain layer, and the second electrode is arranged on the side of the second gain layer away from the substrate; The second light-emitting structure comprises a third reflector and a fourth reflector arranged in a first direction; the third reflector is located on the side away from the second resonant cavity, and the fourth reflector is located on the side close to the second resonant cavity.

2. The semiconductor structure of claim 1, wherein, The third reflector is a multilayer structure, and the multilayer structure is arranged in sequence along the first direction.

3. The semiconductor structure of any of claims 1-2, wherein, The substrate is provided with an isolation groove, and the isolation groove separates the substrate to form a first substrate and a second substrate; The first light-emitting structure is arranged on the first substrate, and the second light-emitting structure is arranged on the second substrate.

4. The semiconductor structure of claim 3, wherein, The isolation groove is provided with a filling part, a first high-resistance layer and a second high-resistance layer; A first surface of the filling part faces the first substrate, and the first surface of the filling part is connected to the first high-resistance layer; a second surface of the filling part faces the second substrate, and the second surface of the filling part is connected to the second high-resistance layer.

5. A method of fabricating a semiconductor structure, characterized by, A method for preparing the semiconductor structure as claimed in any one of claims 1-4, the preparation method comprising: providing a substrate; forming a light-emitting structure base on the substrate; forming a first light-emitting structure and a second light-emitting structure through the light-emitting structure base; the light-emitting direction of the first light-emitting structure is perpendicular to the plane on which the substrate lies, and the light-emitting direction of the second light-emitting structure is parallel to the plane on which the substrate lies.

6. The method of claim 5, wherein the semiconductor structure is prepared by a method comprising: forming a light-emitting structure base on the substrate, comprising: forming a resonant cavity base on the substrate; removing part of the resonant cavity base, and the remaining part of the resonant cavity base forms a first resonant cavity and a second resonant cavity arranged in a spaced manner; The first resonant cavity forms a first electrode, and the first resonant cavity and the first electrode form the first light-out structure; the second resonant cavity forms a second electrode, and the second resonant cavity and the second electrode form the second light-out structure.

7. The method of claim 5, wherein the step of forming the semiconductor structure is performed by a method comprising: Further comprising: forming an isolation groove in the substrate; The isolation groove separates the substrate to form a first substrate and a second substrate, the first light-out structure is arranged on the first substrate, and the second light-out structure is arranged on the second substrate; forming a filling part, a first high-resistance layer, and a second high-resistance layer in the isolation groove; a first surface of the filling part faces the first substrate, and the first surface of the filling part is connected with the first high-resistance layer; a second surface of the filling part faces the second substrate, and the second surface of the filling part is connected with the second high-resistance layer.

8. A semiconductor laser, characterized by The semiconductor structure comprises any one of claims 1-4.

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