Crystal growth ingot furnace guard plate structure for silicon component

Abstract

The invention relates to the technical field of crystal growth equipment, and discloses a crystal growth ingot furnace guard plate structure for a silicon component, the crystal growth ingot furnace guard plate structure comprises an upper-layer circular block, a separated clamping plate, a lower-layer circular block and a crucible, and the upper-layer circular block is of an integral circular structure. The upper-layer circular block and the lower-layer circular block are split, so that the requirement of a silicon component on a circular shape is met, and the problem that an integral circular protection plate is easy to crack is solved through the multi-petal design and thermal expansion gaps of the separated clamping plates; secondly, the innovative L-shaped self-locking structure is matched with the self-weight fixing mode of the crucible, so that bolt connection is completely abandoned, the high-temperature failure risk of bolts is avoided, and disassembly-free demolding is achieved; and furthermore, the demoulding inclination arranged on the inner side of the lower-layer circular block and the split type structure have a synergistic effect, so that the silicon ingot can be automatically separated from the protective plate when being cooled and shrunk, the problem that destructive demoulding is needed by a traditional structure is solved, and perfect unification of the circular protective plate and efficient demoulding is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth equipment, in particular to a crystal growth ingot furnace guard plate structure for silicon components. Background Art

[0002] Semiconductor-grade silicon crystals are a key foundational material for integrated circuit manufacturing and are of great strategic significance to China's economic development and industrial security. Currently, my country relies primarily on imports for large-scale semiconductor silicon materials. Breaking through related technical bottlenecks and achieving independent control has become a major national need. In the silicon component manufacturing process, the ingot furnace guard plate structure directly affects the quality and production costs of the silicon ingots. This is particularly true in the manufacture of large-scale silicon components (22 inches and above), where traditional square guard plates present problems such as low processing efficiency and high material loss.

[0003] Currently, conventional ingot casting furnaces mostly use a square guard plate structure, consisting of four graphite guard plates fixed by bolts. Demolding requires removing the bolts and breaking the crucible to remove the silicon ingot. While a circular guard plate structure better meets the final shape requirements of the silicon component, the expansion of the silicon ingot after casting can easily cause cracking of the integral circular guard plate, making demolding difficult. Summary of the Invention

[0004] The present invention is proposed in view of the problems existing in the guard plate structure of the existing crystal growth ingot furnace for silicon components.

[0005] Therefore, an object of the present invention is to provide a crystal growth ingot furnace guard plate structure for silicon components.

[0006] In order to solve the above technical problems, the present invention provides the following technical solution: it includes an upper circular block, a separate clip-on plate, a lower circular block and a crucible, the upper circular block is an integral circular structure, and is made of carbon composite material, and the lower circular block is composed of multiple separate clip-on plates spliced ​​together, and the side is L-shaped structure.

[0007] As a preferred solution of the crystal growth ingot furnace guard plate structure for the silicon components described in the present invention, the weight of the crucible and the silicon material inside is pressed on the L-shaped bottom end of the lower circular block, and the height of the lower circular block is greater than the height of the silicon ingot.

[0008] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, the separate snap-in plate is a two-petal, three-petal or four-petal structure, with thermal expansion gaps between the petals.

[0009] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, the upper circular blocks and the lower circular blocks are matched in a stepped manner, and the upper circular blocks cover the joints of the lower circular blocks.

[0010] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, the overall height of the upper circular block, the separate clamping plate and the lower circular block after being spliced ​​together is lower than the crucible height.

[0011] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, a concave-convex splicing structure is adopted between the separate clamping plates.

[0012] As a preferred solution of the crystal growth ingot furnace guard plate structure for the silicon component of the present invention, the inner side wall of the lower circular block is provided with a demoulding slope to achieve rapid demoulding of the silicon ingot.

[0013] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, the joints of the separate snap-in plates adopt a splicing sealing structure to reduce melt leakage.

[0014] As a preferred solution of the crystal growth ingot furnace guard plate structure for the silicon component of the present invention, the material of the separate clamping plate is graphite or carbon composite material.

[0015] As a preferred solution of the crystal growth ingot furnace guard plate structure for silicon components of the present invention, the contact surface between the upper circular block and the crucible is provided with a boron nitride coating or graphite paper to reduce friction resistance.

[0016] The beneficial effects of the present invention are as follows: by adopting the petal-type upper circular block and the petal-type lower circular block, it not only meets the circular shape requirements of the silicon component, but also solves the problem of easy cracking of the integral circular guard plate through the multi-petal design of the separate clamping plate and the thermal expansion gap; secondly, the innovative L-shaped self-locking structure combined with the crucible's own weight fixing method completely abandons the bolt connection, which not only avoids the risk of high-temperature failure of the bolts, but also realizes demolding without disassembly; thirdly, the demolding slope set on the inner side of the lower circular block works synergistically with the petal-type structure, so that the silicon ingot can automatically detach from the guard plate when cooling and shrinking, solving the problem of destructive demolding required for traditional structures, and realizing the perfect unity of circular guard plate and efficient demolding, while ensuring process reliability through stepped sealing and splicing sealing structures. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort. Among them:

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0019] Figure 2 It is a cross-sectional view of the overall structure of the present invention.

[0020] Figure 3 It is a schematic diagram of the two-petal structure of the separable snap-in plate structure of the present invention.

[0021] Figure 4 It is a schematic diagram of the three-petal structure of the separable snap-in plate structure of the present invention.

[0022] Figure 5 It is a schematic diagram of the four-petal structure of the separable snap-in plate structure of the present invention. DETAILED DESCRIPTION

[0023] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0024] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0025] Secondly, the term "one embodiment" or "embodiment" herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive of other embodiments.

[0026] Furthermore, the present invention is described in detail with reference to schematic diagrams. For ease of illustration, when describing the embodiments of the present invention, cross-sectional views illustrating device structures may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely illustrative and should not limit the scope of protection of the present invention. Furthermore, in actual production, the three-dimensional dimensions of length, width, and depth should be included.

[0027] Example 1

[0028] Reference Figures 1 to 5 , which is the first embodiment of the present invention, provides a crystal growth ingot furnace guard plate structure for silicon components. This device includes an upper circular block 1, a separate clamping plate 2, a lower circular block 3 and a crucible 4. The upper circular block 1 is an integral circular structure made of carbon composite material. The lower circular block 3 is composed of multiple separate clamping plates 2 spliced ​​together, and the side is L-shaped.

[0029] Among them, the double-layer design of the upper circular block 1 and the lower circular block 3, combined with the L-shaped structure of the separate clamping plate 2, achieves effective protection of the crucible 4, and the selection of carbon composite materials ensures stability and durability in high-temperature environments.

[0030] Specifically, the weight of the crucible 4 and the silicon material inside presses on the L-shaped bottom end of the lower circular block 3 , and the height of the lower circular block 3 is greater than the height of the silicon ingot.

[0031] Among them, the crucible 4 and the weight of the silicon material are used to press the L-shaped bottom end of the lower circular block 3, which has a reliable fixing effect, completely abandons the traditional bolt fixing method, and solves the problems of bolts being easy to loosen in high temperature environments and easy to break during thermal expansion and contraction.

[0032] Furthermore, the separable snap-in plate 2 is a two-petal, three-petal or four-petal structure, with thermal expansion gaps left between the petals.

[0033] Among them, the separate clip-on plate 2 adopts a split design with two petals, three petals or four petals. The thermal expansion gap reserved between the petals allows the upper circular block 1, the separate clip-on plate 2 and the lower circular block 3 to deform synchronously with the thermal expansion and contraction of the crucible 4, effectively avoiding the stress cracks caused by the traditional integral structure when the temperature changes.

[0034] Preferably, the upper circular block 1 and the lower circular block 3 are matched in a stepped manner, the upper circular block 1 covers the joint of the lower circular block 3, and the overall height of the upper circular block 1, the separate clamping plate 2 and the lower circular block 3 after splicing is lower than the height of the crucible 4.

[0035] Among them, the stepped matching design of the upper circular block 1 and the lower circular block 3 forms an effective sealing structure. The design of the upper circular block 1 covering the lower seam not only enhances the structural strength but also prevents melt leakage. The overall height of the upper circular block 1, the separate clip plate 2, and the lower circular block 3 after splicing is lower than the crucible 4. The design not only reduces the risk of carbon pollution, but also is beneficial to the circulation of gas in the furnace and the discharge of volatiles.

[0036] Furthermore, a concave-convex splicing structure is adopted between the separate snap-in plates 2, and the inner side wall of the lower circular block 3 is provided with a demolding slope to achieve rapid demolding of the silicon ingot. A splicing sealing structure is adopted at the joints of the separate snap-in plates 2 to reduce melt leakage. The material of the separate snap-in plates 2 is graphite or carbon composite material.

[0037] Among them, the concave and convex clamping or mortise and tenon structure between the separate clamping plates 2 ensures the splicing accuracy, so that each petal can still maintain accurate positioning in a high temperature environment, avoiding structural failure caused by misalignment, and the demolding slope design of the inner wall of the lower circular block 3 significantly reduces the contact stress of the silicon ingot, making the demolding process smoother and reducing the surface damage of the silicon ingot. The splicing sealing structure at the joint of the separate clamping plate 2 effectively prevents melt leakage through multiple barriers, while allowing necessary thermal expansion displacement, taking into account both sealing and structural reliability. The separate clamping plate 2 is made of graphite or carbon composite material, which not only has good high-temperature stability, but also its excellent thermal conductivity ensures uniform heating of the silicon ingot.

[0038] Furthermore, the contact surface between the upper circular block 1 and the crucible 4 is provided with a boron nitride coating or graphite paper to reduce friction resistance.

[0039] The boron nitride coating on the contact surface between the upper circular block 1 and the crucible 4 effectively reduces the friction coefficient, prevents high-temperature adhesion, and reduces thermal stress.

[0040] When in use, the thermal expansion gaps and splicing sealing structures reserved between the petals of the separate snap-in plate 2 reserve space for subsequent thermal expansion; during assembly, the upper circular block 1 covers the joint of the lower circular block 3 to form a stepped seal; after the crucible 4 is loaded, its own weight is used to press the L-shaped bottom end of the lower circular block 3 to achieve stable fixation; during the crystal growth process, the boron nitride coating reduces friction, and the carbon composite material ensures high-temperature stability; after the growth is completed, the silicon ingot is smoothly demolded by relying on the inner demolding slope, and the petal structure facilitates quick disassembly and maintenance, preparing for the next round of production. The entire process does not require bolt fixation, achieving efficient and stable continuous production.

[0041] In summary, the upper circular block 1 provides stable support as an integral structure, and forms a stepped fit with the lower circular block 3 spliced ​​by the separate clip-on plate 2, which not only ensures structural strength but also achieves effective sealing; the ingenious design of the L-shaped structure, combined with the self-weight fixing method of the crucible 4, completely solves the reliability problem of traditional bolt connections in high-temperature environments; the petal structure, combined with the thermal expansion gap and splicing sealing design, can adapt to thermal expansion and contraction and prevent melt leakage; the choice of graphite or carbon composite materials ensures high-temperature stability, while the boron nitride coating significantly improves the friction performance; the design that the height of the upper circular block 1, the separate clip-on plate 2 and the lower circular block 3 after splicing is lower than the crucible 4 optimizes process observation and gas circulation, and the inner demoulding slope design greatly improves the demoulding efficiency, so that the protective plate after splicing the upper circular block 1, the separate clip-on plate 2 and the lower circular block 3 has significant advantages in high-temperature stability, sealing performance, ease of disassembly and assembly, and service life, and is particularly suitable for large-scale production of high-quality silicon crystals.

[0042] Example 2

[0043] Reference Figure 4 , which is the second embodiment of the present invention. This embodiment is different from the first embodiment in that it provides a separate snap-in plate 2 that is assembled in a three-petal structure.

[0044] Furthermore, each petal is an arc-shaped plate with a central angle of 120°, and is made of graphite or carbon composite material.

[0045] During use, the three-petal design of the separate snap-in plate 2 is pressed and positioned by the deadweight of the crucible 4. When the silicon material melts and expands, the joint gap can adaptively expand to avoid cracking of the guard plate. When demolding, the three-petal structure can be radially separated without removing the bolts.

[0046] In summary, the three-petal design of the separate clamping plate 2 not only ensures structural stability at high temperatures, but also enables fast assembly and disassembly without bolts, and is suitable for silicon ingot production.

[0047] Example 3

[0048] Reference Figure 5 , which is the third embodiment of the present invention. This embodiment is different from the second embodiment in that it provides a separate snap-in plate 2 that is assembled in a four-petal structure.

[0049] Furthermore, each petal is a trapezoidal plate with a central angle of 90°, and is made of graphite or carbon composite material.

[0050] During use, the four-petal structured separate clamping plate 2 can automatically release stress when the silicon ingot cools and shrinks. The overall height of the guard plate after the upper circular block 1, the separate clamping plate 2 and the lower circular block 3 are spliced ​​together is lower than the crucible 4, reducing the pollution caused by the floating of carbon impurities.

[0051] In summary, the four-petal structure of the separate clamping plate 2 takes into account both the molding accuracy and demoulding efficiency of large-sized silicon ingots, and is particularly suitable for the preparation of low-oxygen silicon materials.

[0052] It is important to note that the construction and arrangement of the present application shown in a number of different exemplary embodiments are merely illustrative. Although only a few embodiments are described in detail in this disclosure, it should be readily understood by those who refer to this disclosure that many modifications are possible (e.g., the size, scale, structure, shape and proportion of various elements, as well as parameter values ​​(e.g., temperature, pressure, etc.), mounting arrangements, use of materials, color, directional changes, etc.) without departing substantially from the novel teachings and advantages of the subject matter described in this application. For example, an element shown as integrally formed may be composed of multiple parts or elements, the position of the element may be inverted or otherwise changed, and the nature or number or position of the discrete elements may be altered or changed. Therefore, all such modifications are intended to be included within the scope of the present invention. The order or sequence of any process or method steps may be changed or reordered according to alternative embodiments. In the claims, any "means plus function" clause is intended to cover the structure described herein that performs the function, and is not only structurally equivalent but also equivalent structures. Other replacements, modifications, changes, and omissions may be made in the design, operating conditions, and arrangement of the exemplary embodiments without departing from the scope of the present invention. Therefore, the invention is not limited to the specific embodiments, but extends to various modifications that still fall within the scope of the appended claims.

[0053] Additionally, in order to provide a concise description of exemplary embodiments, all features of an actual embodiment (ie, those features that are not relevant to the best mode presently contemplated for carrying out the invention or those that are not relevant to implementing the invention) may not be described.

[0054] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A crystal growth ingot furnace guard plate structure for silicon components, characterized in that: The invention comprises an upper circular block (1), a separate clamping plate (2), a lower circular block (3) and a crucible (4); the upper circular block (1) is an integral circular structure made of carbon composite material; the lower circular block (3) is composed of a plurality of separate clamping plates (2) spliced ​​together, and has an L-shaped side structure.

2. The crystal growth ingot furnace guard plate structure for silicon components according to claim 1, characterized in that: The weight of the crucible (4) and the silicon material inside presses on the L-shaped bottom end of the lower circular block (3), and the height of the lower circular block (3) is greater than the height of the silicon ingot.

3. The crystal growth ingot furnace guard plate structure for silicon components according to claim 2, characterized in that: The separate clamping plate (2) is a two-petal, three-petal or four-petal structure, with thermal expansion gaps left between the petals.

4. The crystal growth ingot furnace guard plate structure for silicon components according to claim 3, characterized in that: The upper circular block (1) and the lower circular block (3) are matched in a stepped manner, and the upper circular block (1) covers the joint of the lower circular block (3).

5. The crystal growth ingot furnace guard plate structure for silicon components according to claim 4, characterized in that: The overall height of the upper circular block (1), the separate clamping plate (2) and the lower circular block (3) after being spliced ​​together is lower than the height of the crucible (4).

6. The crystal growth ingot furnace guard plate structure for silicon components according to claim 5, characterized in that: The separate clamping plates (2) adopt a concave-convex splicing structure.

7. The crystal growth ingot furnace guard plate structure for silicon components according to claim 6, characterized in that: The inner side wall of the lower circular block (3) is provided with a demoulding slope to achieve rapid demoulding of the silicon ingot.

8. The crystal growth ingot furnace guard plate structure for silicon components according to claim 7, characterized in that: The joints of the separate clamping plate (2) adopt a splicing sealing structure to reduce melt leakage.

9. The crystal growth ingot furnace guard plate structure for silicon components according to claim 8, characterized in that: The material of the separate clamping plate (2) is graphite or carbon composite material.

10. The crystal growth ingot furnace guard plate structure for silicon components according to claim 9, characterized in that: The contact surface between the upper circular block (1) and the crucible (4) is provided with a boron nitride coating or graphite paper to reduce friction resistance.

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