Epitaxial equipment

Abstract

The invention provides epitaxial equipment, relates to the technical field of semiconductor manufacturing, and is designed for solving the problem that the thickness uniformity and doping concentration uniformity of a silicon carbide epitaxial wafer manufactured by the epitaxial equipment provided by the related technology are greatly different. The epitaxy equipment comprises a first cavity, a second cavity, a bearing part and a protection part, the first cavity and the second cavity are oppositely arranged, and a reaction cavity used for an epitaxy process is formed between the first cavity and the second cavity; the bearing part is arranged in the reaction cavity in a self-rotating manner; the protection part is located on the upstream of the bearing part in the gas inlet direction of the reaction cavity and provided with a first end and a second end which are spaced in the gas inlet direction, the first end and the bearing part are arranged in a spaced mode, and the second end is rotationally arranged in the second cavity and used for changing the height of the first end. The optimal gas source depletion curve can be obtained at a certain temperature, so that a better epitaxial effect can be obtained, and the thickness uniformity and the doping concentration uniformity are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to an epitaxial device. Background Art

[0002] As a representative example of wide-bandgap semiconductor materials, silicon carbide semiconductors feature high critical breakdown field strength, high thermal conductivity, and high electron saturation drift velocity. These characteristics significantly expand the energy handling capabilities of power devices, enabling them to meet the requirements of next-generation power electronics for higher power, smaller size, and operation under harsher conditions. Unlike traditional silicon device manufacturing processes, nearly all silicon carbide devices are fabricated on epitaxial materials, and the performance of these materials directly determines their performance.

[0003] The quality of silicon carbide epitaxial wafers is primarily affected by the equipment's temperature and airflow fields. The epitaxial equipment provided by the related technology uses induction coil heating and a horizontal air inlet reaction chamber. After induction heating by the upper and lower half-moon hollow heating bodies, the wafer is uniformly heated by thermal radiation. The reaction gas and carrier gas are evenly mixed and then enter the reaction chamber horizontally for chemical vapor deposition. At different temperatures, the growth rate of the reactants along the direction of airflow is different, which means that the gas source depletion curve is different. Therefore, the epitaxial growth results will also be different, resulting in significant differences in thickness uniformity and doping concentration uniformity. Summary of the Invention

[0004] The object of the present invention is to provide an epitaxial growth device to solve the technical problem that silicon carbide epitaxial wafers manufactured by the epitaxial growth device provided by the related art have large differences in thickness uniformity and doping concentration uniformity.

[0005] The epitaxial device provided by the present invention comprises a first cavity, a second cavity, a carrier and a protective member; wherein,

[0006] The first cavity and the second cavity are arranged opposite to each other, and a reaction chamber for epitaxial process is formed between the first cavity and the second cavity;

[0007] The carrier is rotatably disposed in the reaction chamber;

[0008] Along the air inlet direction of the reaction chamber, the protective member is located upstream of the supporting member, and the protective member has a first end and a second end spaced apart along the air inlet direction, the first end is spaced apart from the supporting member, and the second end is rotatably set in the second cavity to change the height of the first end.

[0009] Furthermore, the epitaxial device also includes a driving device, the second cavity is provided with a hollow cavity, the driving device is arranged in the hollow cavity, and the driving end of the driving device extends from the top wall of the second cavity and extends to the back side of the protective member.

[0010] Furthermore, the driving device includes a lifting screw and a rotating assembly, the top wall of the second cavity is provided with a through hole radially matched with the lifting screw, and the upper end of the lifting screw connected to the protective member through the through hole forms the driving end; the rotating assembly is arranged in the hollow cavity, and the rotating assembly is spirally matched with the lifting screw to drive the lifting screw to rise and fall.

[0011] Furthermore, the rotating assembly includes a rotating impeller and a power source, wherein the rotating impeller is screw-matched with the lifting screw; the power source is used to apply a force to the blades of the rotating impeller to drive the rotating impeller to rotate.

[0012] Furthermore, the power source includes a first air source component and a second air source component, the first air source component is used to drive the rotating impeller to rotate around a first direction, and the second air source component is used to drive the rotating impeller to rotate around a second direction, and the second direction is opposite to the first direction.

[0013] The first air source assembly includes a first air pipe, which is provided with a first air blowing port; the second air source assembly includes a second air pipe, which is provided with a second air blowing port, wherein the first air blowing port is used to generate a driving airflow that causes the rotating impeller to rotate around the first direction, and the second air blowing port is used to generate a driving airflow that causes the rotating impeller to rotate around the second direction.

[0014] Furthermore, the first gas source component is provided with a first air inlet, the second gas source component is provided with a second air inlet, the hollow cavity is a semi-cylindrical structure, the busbar direction of the hollow cavity is roughly parallel to the air inlet direction of the reaction chamber, and the first air inlet and the second air inlet are facing the same end of the hollow cavity along its busbar direction.

[0015] Furthermore, the rotating assembly further includes a fixed block, which is disposed in the hollow cavity and fixedly connected to the second cavity, and the rotating impeller is rotatably mounted on the fixed block.

[0016] Furthermore, the protective member has a transition edge at the first end, the transition edge is formed by the upper surface of the protective member and the side surface of the protective member, and the transition edge is provided with a chamfer.

[0017] Furthermore, the epitaxial device further includes a support block, which is arranged on the second cavity and is used to support the first cavity; the second end of the protective member is rotatably connected to the support block.

[0018] Furthermore, the support block is provided with an arcuate groove facing the protective member, and the extension direction of the arcuate groove is parallel to the rotation axis of the protective member; the second end of the protective member is provided with an arcuate protrusion, and the arcuate protrusion is rotatably matched with the arcuate groove.

[0019] The beneficial effects brought about by the epitaxial device of the present invention are:

[0020] By providing an epitaxial growth apparatus primarily consisting of a first chamber, a second chamber, a carrier, and a protective member, during the process, the first chamber and the second chamber face each other to form a reaction chamber for the epitaxial growth process, the carrier supports the wafer, and the protective member is located upstream of the carrier in the direction of air intake into the reaction chamber. During the above process, by rotating the second end of the protective member relative to the second chamber, the first end of the protective member can be raised relative to the second chamber, thereby changing the height of the first end of the protective member, making the angle between the protective member and the second chamber adjustable, thereby achieving the purpose of adjusting the height of the airflow flowing to the carrier.

[0021] The epitaxial device adjusts the height of the protective part. On the one hand, the vertical diffusion ability of the airflow is weakened when passing through the protective part. Therefore, the gas source will not react quickly at the air inlet end and cause the gas source concentration to be exhausted too quickly. On the other hand, as the air inlet height increases, the center temperature of the wafer decreases compared to when the air inlet height is not increased, thereby increasing the film thickness in the center of the wafer and effectively improving the thickness uniformity. The temperature field is improved while improving the air flow field height.

[0022] It can be seen that the epitaxial equipment dynamically adjusts the height of the protective part and uses the change of the airflow field to offset the adverse effects caused by the change of the depletion curve, so that the depletion curve of the gas source in the reaction chamber is as smooth as possible. The airflow field and temperature field conditions of the reaction chamber are improved. The optimal gas source depletion curve can be obtained at a certain temperature, thereby obtaining a better epitaxial effect, improving the thickness uniformity and doping concentration uniformity, and thus realizing the process adjustability of the epitaxial equipment.

[0023] In addition, by arranging the protective member to be spaced apart from the supporting member along the air inlet direction of the reaction chamber, an avoidance gap is formed between the protective member and the supporting member, which can also ensure that the protective member will not interfere with the rotation process of the supporting member when the second chamber rotates. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0025] Figure 1 A right view of the partial structure of the epitaxial device provided for related technology;

[0026] Figure 2 A main cross-sectional view of the local structure of the epitaxial device provided for related technology;

[0027] Figure 3 A partial cross-sectional view of the epitaxial device provided in an embodiment of the present invention Figure 1 , wherein the protective element does not adjust the air intake angle;

[0028] Figure 4 A partial cross-sectional view of the epitaxial device provided in an embodiment of the present invention Figure 2 , wherein the protective member adjusts the air intake angle;

[0029] Figure 5 for Figure 3 Cross-sectional view of the epitaxial device from a medium AA perspective;

[0030] Figure 6 A top view of the local structure of the epitaxial device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In the reaction chamber of epitaxial growth equipment, particularly silicon carbide epitaxial growth equipment, chamber components (such as graphite components) are susceptible to the accumulation of byproducts from process reactions. To extend the lifespan and protect the graphite components, a protective element with a silicon carbide coating is typically installed within the reaction chamber. Specifically, the protective element is installed on the upper wall of the lower element (lower half of the moon) within the chamber. The silicon carbide coating on the protective element mitigates the formation of byproducts.

[0032] Figure 1 Right view of the local structure of the epitaxial device provided for related technology, Figure 2 The main cross-sectional view of the local structure of the epitaxial device provided for the related technology. Figure 1 and Figure 2As shown, the epitaxial growth device provided by the related art includes an upper half moon 020' and a lower half moon 040', both of which are graphite components. The upper half moon 020' and the lower half moon 040' are opposite each other to form a reaction chamber 030' of the epitaxial growth device. The upper half moon 020' and the lower half moon 040' serve as heating elements. Both the upper half moon 020' and the lower half moon 040' are hollow structures. Ring-shaped heating coils are located outside the upper half moon 020' and the lower half moon 040', and are heated by current generated by electromagnetic induction.

[0033] Please continue to refer to Figure 1 and Figure 2 The air floatation tray 010', fixed to the outer surface of the upper wall of the lower half moon 040', is used to support the wafers. It heats the wafers through heat conduction and can be pneumatically rotated. A protective member 050' is placed horizontally on the lower half moon 040' and secured by two graphite pins 060'. Protective member 050' is located upstream of air floatation tray 010'.

[0034] In the above-mentioned epitaxial growth equipment process, the height of the reaction chamber 030' is consistent with the air inlet height, and the airflow field is fixed. However, since the gas source depletion curves at different temperatures are different, the epitaxial growth results will also be different, resulting in large differences in the thickness uniformity and doping concentration uniformity of the final silicon carbide epitaxial wafers.

[0035] Therefore, the object of the present invention is to provide an epitaxial device to solve the technical problem that the thickness uniformity and doping concentration uniformity of silicon carbide epitaxial wafers manufactured by the above-mentioned epitaxial device are greatly different.

[0036] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the following detailed description of the specific embodiments of the present invention is given in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0037] Figure 3 A partial cross-sectional view of the epitaxial device provided in this embodiment Figure 1 (The protective element 100 does not adjust the air intake angle). Figure 4 A partial cross-sectional view of the epitaxial device provided in this embodiment Figure 2 (The protective element 100 adjusts the air intake angle). Figure 3 and Figure 4As shown, this embodiment provides an epitaxial device, including a first cavity (not shown in the figure), a second cavity 020, a carrier 010 and a protective member 100; wherein, the first cavity and the second cavity 020 are arranged opposite to each other, and a reaction chamber for the epitaxial process is formed between the first cavity 020 and the second cavity 020; the carrier 010 is rotatably arranged in the reaction chamber; along the air inlet direction of the reaction chamber, the protective member 100 is located upstream of the carrier 010, and the protective member 100 has a first end 110 and a second end 120 spaced apart along the air inlet direction, the first end 110 is spaced apart from the carrier 010, and the second end 120 is rotatably arranged in the second cavity 020, for changing the height of the first end 110.

[0038] Optionally, the first cavity and the second cavity 020 may be upper half moon 020' and lower half moon 040' structures made of graphite in the related art, which is not limited in the present application.

[0039] It should be noted that in Figure 3 and Figure 4 From the perspective shown, the "air inlet direction of the reaction chamber" is from right to left. "Upstream of carrier 010" refers to the flow of air, i.e., the upstream of the airflow, specifically to the right of carrier 010 as shown in the figure.

[0040] During the process, the first chamber and the second chamber 020 face each other, forming a reaction chamber for the epitaxial process. The carrier 010 supports the wafer, and the protective member 100 is located upstream of the carrier 010 along the air inlet direction of the reaction chamber. During the above process, by rotating the second end 120 of the protective member 100 relative to the second chamber 020, the first end 110 of the protective member 100 can be raised relative to the second chamber 020, thereby changing the height of the first end 110 of the protective member 100. This makes the angle between the protective member 100 and the second chamber 020 adjustable, thereby achieving the purpose of adjusting the height of the airflow flowing to the carrier 010.

[0041] The epitaxial device adjusts the height of the protective part 100. On the one hand, the vertical diffusion ability of the airflow is weakened when passing through the protective part 100. Therefore, the gas source will not react quickly at the air inlet end and cause the gas source concentration to be exhausted too quickly. On the other hand, as the air inlet height increases, the center temperature of the wafer decreases compared to when the air inlet height is not increased, thereby increasing the film thickness in the center of the wafer and effectively improving the thickness uniformity. The temperature field is improved while improving the air flow field height.

[0042] It can be seen that the epitaxial device dynamically adjusts the height of the protective member 100 and utilizes the change in the airflow field to offset the adverse effects caused by the change in the depletion curve, so that the depletion curve of the gas source in the reaction chamber is as smooth as possible, and the airflow field and temperature field conditions of the reaction chamber are improved. The optimal gas source depletion curve can be obtained at a certain temperature, thereby achieving a better epitaxial effect, improving the thickness uniformity and doping concentration uniformity, and thus realizing the process adjustability of the epitaxial device.

[0043] It should be noted that, according to the simulation results, the optimal lifting height of the air intake end is between 30mm and 35mm. In this embodiment, the lifting height of the protective member 100 is in the range of 0 to 40mm. When the lifting height of the protective member 100 is 0, that is, when the air intake angle is not adjusted, the position of the protective member 100 is as follows: Figure 3 shown.

[0044] In addition, by arranging the protective member 100 to be spaced apart from the carrier 010 along the gas inlet direction of the reaction chamber, an avoidance gap 030 is formed between the protective member 100 and the carrier 010 (see FIG. Figure 6 ), it can also ensure that when the supporting member 010 rotates in the second cavity 020, the protective member 100 will not interfere with its rotation process.

[0045] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the epitaxial device may further include a driving device 200. Specifically, the second cavity 020 is provided with a hollow cavity 022, the driving device 200 is arranged in the hollow cavity 022, and the driving end of the driving device 200 extends from the top wall 021 of the second cavity 020 and extends to the back side of the protective member 100.

[0046] When it is necessary to adjust the height of the airflow flowing to the carrier 010, the driving end of the driving device 200 can be extended or retracted. Under the abutment between the driving end and the back of the protective member 100, the protective member 100 will rise or fall with the driving end, so that the second end 120 of the protective member 100 rotates relative to the second cavity 020, and the first end 110 is raised or lowered, so as to achieve the purpose of adjusting the height of the airflow flowing to the carrier 010.

[0047] The setting of the above-mentioned driving device 200 realizes the automatic rotation of the protective member 100, so that the height adjustment of the airflow flowing to the carrier 010 can be achieved during the process without stopping the epitaxial equipment, reducing personnel participation and lowering labor intensity.

[0048] It should be noted that the protective member 100 has an upper surface for guiding the inlet gas of the reaction chamber, and a lower surface facing the second cavity 020 , and the “back surface of the protective member 100 ” mentioned above is the lower surface thereof.

[0049] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the driving device 200 may include a lifting screw 210 and a rotating assembly. Specifically, the top wall 021 of the second cavity 020 is provided with a through hole 023 radially matched with the lifting screw 210, and the upper end of the lifting screw 210 connected to the protective member 100 through the through hole 023 forms a driving end; the rotating assembly is arranged in the hollow cavity 022, and the rotating assembly is spirally matched with the lifting screw 210 to drive the lifting screw 210 to move up and down.

[0050] When the height of the airflow directed toward the carrier 010 needs to be adjusted, the rotating assembly can be rotated. At this point, the rotating assembly and the lifting screw 210 are screwed together, and the rotational freedom of the lifting screw 210 is restricted, thereby converting the screw transmission between the rotating assembly and the lifting screw 210 into the lifting motion of the lifting screw 210. The lifting screw 210 is abutted against the back surface of the protective member 100 to achieve the height change of the protective member 100. The rotation of the second end 120 of the protective member 100 is used to change the angle between the protective member 100 and the top wall 021 of the second cavity 020, thereby adjusting the airflow height. The lifting and lowering adjustment of the protective member 100 can be achieved by rotating the rotating assembly clockwise and counterclockwise.

[0051] This arrangement of the driving device 200 can achieve stepless adjustment, so that the protective member 100 has any height position, thereby obtaining any air intake angle.

[0052] In this embodiment, the lifting screw 210 can be set to be slidably connected to the side wall of the second cavity 020 through a nut to limit the rotational freedom of the lifting screw 210, thereby ensuring that during the rotation of the rotating component, the spiral transmission between the rotating component and the lifting screw 210 can be converted into the lifting motion of the lifting screw 210.

[0053] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the rotating assembly includes a rotating impeller 220 and a power source. The rotating impeller 220 is screw-engaged with the lifting screw 210. The power source is used to apply force to the blades 222 of the rotating impeller 220 to drive the rotating impeller 220 to rotate. Specifically, the rotating impeller 220 is provided with a threaded hole 221, through which the rotating impeller 220 is screw-engaged with the lifting screw 210.

[0054] By setting the rotating component to the above-mentioned form, on the one hand, after completing the purpose of adjusting the height of the protective member 100, the rotating force no longer needs to be applied to the rotating impeller 220. At this time, the rotating impeller 220 realizes the self-locking of the lifting screw 210 under the cooperation of the threaded hole 221 and the lifting screw 210, so that the lifting screw 210 remains at this height, effectively reducing the energy consumption in the process of the power source applying the rotational force to the rotating impeller 220. On the other hand, by setting the power source to apply the force to rotate the rotating impeller 220 to the blades 222 of the rotating impeller 220, the space occupied by the hollow cavity 022 along the height direction can be reduced, which is conducive to reducing the volume of the second cavity 020.

[0055] Figure 5 for Figure 3 Cross-sectional view of epitaxial device from the AA perspective. Figure 5 As shown, the power source may include a first air source component and a second air source component, wherein the first air source component is used to drive the rotary impeller 220 to rotate around a first direction, and the second air source component is used to drive the rotary impeller 220 to rotate around a second direction, which is opposite to the first direction.

[0056] It should be noted that in Figure 5 In the illustrated perspective, the first direction may be a clockwise direction, and correspondingly, the second direction may be a counterclockwise direction.

[0057] The rotating impeller 220 Figure 5 The description will be made by taking the case where the lifting screw 210 rises when rotating in the clockwise direction as shown. When it is necessary to increase the angle between the protective member 100 and the top wall 021 of the second cavity 020 to increase the height of the airflow flowing to the carrier 010, the first air source component can be used to blow air to the blades 222 of the rotating impeller 220, so that the rotating impeller 220 rotates in a clockwise direction to make the lifting screw 210 rise and lift the first end 110 of the protective member 100, thereby achieving the purpose of increasing the airflow flowing to the carrier 010; when it is necessary to reduce the angle between the protective member 100 and the top wall 021 of the second cavity 020 to reduce the height of the airflow flowing to the carrier 010, the second air source component can be used to blow air to the blades 222 of the rotating impeller 220, so that the rotating impeller 220 rotates in a counterclockwise direction to make the lifting screw 210 descend and lower the first end 110 of the protective member 100, thereby achieving the purpose of reducing the airflow flowing to the carrier 010.

[0058] After a certain volume of gas or a certain amount of time is introduced using the first and second gas source assemblies, protective element 100 is adjusted to the desired height. After the gas supply from the first and second gas source assemblies is cut off, the lifting screw 210, in conjunction with the rotating impeller 220, self-locks, maintaining protective element 100 at the desired height. At this point, the exhaust system in the epitaxial apparatus can be used to evacuate the gas from hollow cavity 022, preventing subsequent processing from being affected.

[0059] This arrangement, which utilizes the first and second air source assemblies to blow air in different directions toward the rotating impeller 220, thereby achieving rotation of the rotating impeller 220 in different directions, allows, during use, the height of the first end 110 of the protective member 100 to be varied by controlling the air intake volume or intake time of the first and second air source assemblies, thereby varying the height of the airflow directed toward the carrier 010. This achieves the purpose of dynamically adjusting the exhaust curve of the air source reaction, thereby enabling the epitaxial growth apparatus to achieve optimal epitaxial growth results. Furthermore, this arrangement, which utilizes airflow in different directions for driving, allows the airflow to be removed after height adjustment is complete without affecting subsequent processes or contaminating the hollow cavity 022.

[0060] It should be noted that, in this embodiment, the gas blown toward the blades 222 of the rotating impeller 220 through the first gas source assembly and the second gas source assembly may be argon.

[0061] Please continue to refer to Figure 5 In this embodiment, the first air source component may include a first air pipe 230, which is provided with a first air blowing port 231; the second air source component may include a second air pipe 240, which is provided with a second air blowing port 241, wherein the first air blowing port 231 is used to generate a driving airflow that causes the rotating impeller 220 to rotate in a first direction, and the second air blowing port 241 is used to generate a driving airflow that causes the rotating impeller 220 to rotate in a second direction.

[0062] The above-mentioned arrangement of the first air source component and the second air source component can shorten the distance between the blowing ports of the first air source component and the second air source component and the blades 222 of the rotating impeller 220, so that the driving airflow for rotating the rotating impeller 220 in the first direction and the driving airflow for rotating the rotating impeller 220 in the second direction can act on the blades 222 of the rotating impeller 220 in a targeted manner, thereby improving the reliability of driving the rotating impeller 220.

[0063] Specifically, when arranging the first air source assembly and the second air source assembly, the axial plane passing through the rotation center of the rotary impeller 220 can be used as a dividing plane, so that the first air pipe 230 and the second air pipe 240 are symmetrically arranged.

[0064] Please continue to refer to Figure 5 In this embodiment, the first gas source assembly is provided with a first gas inlet 234, and the second gas source assembly is provided with a second gas inlet 244. The hollow cavity 022 has a semi-cylindrical structure. The busbar direction of the hollow cavity 022 is roughly parallel to the gas inlet direction of the reaction chamber. The first gas inlet 234 and the second gas inlet 244 face the same end of the hollow cavity 022 along its busbar direction.

[0065] This arrangement of the first air inlet 234 and the second air inlet 244 toward the end of the hollow cavity 022 prevents the first air source assembly and the second air source assembly from passing through the top wall 021 and the bottom wall of the second cavity 020. This eliminates the need for additional processing of the top wall 021 and the bottom wall of the second cavity 020, and prevents damage to the top wall 021 and the bottom wall of the second cavity 020. Furthermore, by arranging the first air inlet 234 and the second air inlet 244 toward the same end of the hollow cavity 022, the length of the pipeline between the air source and the first and second air pipes 230, 240, can be shortened when the same air source is used to supply air to the first and second air pipes 230, 240. This simplifies the pipeline layout and facilitates the use of the same air source to supply air to the first and second air pipes 230, 240.

[0066] It should be noted that the above-mentioned “the busbar direction of the hollow cavity 022 is roughly parallel to the air inlet direction of the reaction chamber” includes both the situation where the busbar direction of the hollow cavity 022 is completely parallel to the air inlet direction of the reaction chamber, and the situation where the busbar direction of the hollow cavity 022 forms an acute angle with the air inlet direction of the reaction chamber.

[0067] In this embodiment, specifically Figure 5 From the perspective shown, the first air inlet 234 and the second air inlet 244 are both oriented toward the right end of the second cavity 020 .

[0068] Please continue to refer to Figure 5 In this embodiment, the first air pipe 230 may include a first air inlet section 232 and a first air outlet section 233 connected at an angle, the free end of the first air inlet section 232 forms a first air inlet 234, and the end of the first air outlet section 233 forms a first air blowing port 231; similarly, the second air pipe 240 may include a second air inlet section 242 and a second air outlet section 243 connected at an angle, the free end of the second air inlet section 242 forms a second air inlet 244, and the end of the second air outlet section 243 forms a second air blowing port 241.

[0069] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the rotating assembly may further include a fixed block 250 . Specifically, the fixed block 250 is disposed in the hollow cavity 022 and fixedly connected to the second cavity 020 . The rotating impeller 220 is rotatably mounted on the fixed block 250 .

[0070] This form of installing the rotating impeller 220 using the fixing block 250, on the one hand, forms a transition structure between the rotating impeller 220 and the second cavity 020, thereby eliminating the need for additional machining of the second cavity 020 and reducing damage to the second cavity 020. On the other hand, the rotating impeller 220 and the fixing block 250 can be installed first and then installed together into the hollow cavity 022 of the second cavity 020, which can improve the installation efficiency of the drive device 200 in the second cavity 020.

[0071] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the rotating impeller 220 is provided with an annular groove, and the upper portion of the fixing block 250 is clamped in the annular groove, thereby achieving assembly with the rotating impeller 220.

[0072] It should be noted that, in this embodiment, the fixing block 250 may include a two-part structure, wherein each part of the structure is provided with a half hole. When the two parts of the structure are docked, the two half holes form an assembly hole for engaging with the annular groove of the rotating impeller 220.

[0073] It should also be noted that Figure 3 and Figure 4 In the figure, the structure of the fixed block 250 is only schematically represented. It can be understood that the upper part of the fixed block 250 has a certain thickness, which allows the upper part of the fixed block 250 to be stuck in the annular groove, and also does not cause the rotating impeller 220 to move in the up and down directions.

[0074] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the protective member 100 has a transition edge 111 at the first end 110 , wherein the transition edge 111 is formed by the upper surface of the protective member 100 and the side surface of the protective member 100 , and the transition edge 111 is provided with a chamfer.

[0075] The above-mentioned chamfer setting can slow down the deposition of by-products on the protective member 100, and when the protective member 100 is raised, the airflow can smoothly descend when flowing through the first end 110 of the protective member 100, and will not generate turbulence at the first end 110 of the protective member 100, thereby ensuring the smoothness of the gas flow process.

[0076] Figure 6 This is a top view of the partial structure of the epitaxial device provided in this embodiment. Please continue to refer to Figure 3 and Figure 4 , and combined with Figure 6In this embodiment, the epitaxial device may further include a support block 300 . Specifically, the support block 300 is disposed in the second cavity 020 for supporting the first cavity; the second end 120 of the protective member 100 is rotatably connected to the support block 300 .

[0077] The setting of the above-mentioned support block 300 can not only support the first cavity, but also provide an installation basis for the rotational installation of the protective part 100 in the second cavity 020. There is no need to set a structure suitable for rotational connection with the protective part 100 for the top wall 021 of the second cavity 020, which can improve the rotational installation efficiency of the protective part 100.

[0078] Please continue to refer to Figure 6 In this embodiment, the support block 300 is roughly in a “]” structure, wherein the second end 120 of the protective member 100 is connected to the two side ears of the support block 300 through a rotating pin 500.

[0079] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the support block 300 is provided with an arc-shaped groove toward the protective member 100, wherein the extension direction of the arc-shaped groove is parallel to the rotation axis of the protective member 100; the second end 120 of the protective member 100 is provided with an arc-shaped protrusion 121, and the arc-shaped protrusion 121 rotates with the arc-shaped groove.

[0080] By providing an arc-shaped protrusion 121 on the second end 120 of the protective member 100 and providing an arc-shaped groove on the support block 300 that rotatably cooperates with the above-mentioned arc-shaped protrusion 121, the support block 300 can support the protective member 100 by utilizing the cooperation between the arc-shaped groove and the arc-shaped protrusion 121 during the process of rotating, raising or lowering the protective member 100, thereby ensuring the stability of the protective member 100 during the rotation process.

[0081] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the epitaxial device may further include a fixing pin 400 , wherein the support block 300 is fixedly connected to the top wall 021 of the second cavity 020 via the fixing pin 400 .

[0082] This method of fixing the support block 300 using the fixing pin 400 has a simple structure and low cost.

[0083] It should be noted that, in this embodiment, the lifting screw 210 , the rotating impeller 220 , the support block 300 , the fixing pin 400 and the rotating pin 500 may be made of graphite.

[0084] In this embodiment, the epitaxial device may further include an exhaust system. Specifically, after the height of the protective member 100 is adjusted, the exhaust system may be used to extract the gas in the hollow cavity 022 of the second cavity 020 .

[0085] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

[0086] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, article, or device that includes the element.

[0087] In the above embodiments, the descriptions of directions such as “upper”, “lower”, “left”, “right”, and “side” are all based on the drawings.

[0088] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An epitaxial device, characterized in that: It comprises a first cavity, a second cavity (020), a bearing member (010) and a protective member (100); wherein, The first cavity and the second cavity (020) are arranged opposite to each other, and a reaction chamber for epitaxial process is formed between the first cavity and the second cavity (020); The carrier (010) is rotatably arranged in the reaction chamber; Along the air inlet direction of the reaction chamber, the protective member (100) is located upstream of the supporting member (010), and the protective member (100) has a first end (110) and a second end (120) spaced apart along the air inlet direction, the first end (110) is spaced apart from the supporting member (010), and the second end (120) is rotatably arranged in the second cavity (020) for changing the height of the first end (110).

2. The epitaxial device according to claim 1, characterized in that: The epitaxial device further includes a driving device (200), the second cavity (020) is provided with a hollow cavity (022), the driving device (200) is arranged in the hollow cavity (022), and the driving end of the driving device (200) extends from the top wall (021) of the second cavity (020) to the back side of the protective member (100).

3. The epitaxial device according to claim 2, characterized in that: The driving device (200) includes a lifting screw (210) and a rotating assembly. The top wall (021) of the second cavity (020) is provided with a through hole (023) radially matched with the lifting screw (210). The upper end of the lifting screw (210) connected to the protective member (100) through the through hole (023) forms the driving end; the rotating assembly is arranged in the hollow cavity (022), and the rotating assembly is spirally matched with the lifting screw (210) to drive the lifting screw (210) to rise and fall.

4. The epitaxial device according to claim 3, characterized in that: The rotating assembly comprises a rotating impeller (220) and a power source, wherein the rotating impeller (220) is screw-matched with the lifting screw (210); the power source is used to apply a force to the blades (222) of the rotating impeller (220) to drive the rotating impeller (220) to rotate.

5. The epitaxial device according to claim 4, characterized in that: The power source includes a first air source component and a second air source component, wherein the first air source component is used to drive the rotating impeller (220) to rotate in a first direction, and the second air source component is used to drive the rotating impeller (220) to rotate in a second direction, which is opposite to the first direction.

6. The epitaxial device according to claim 5, characterized in that: The first air source component comprises a first air pipe (230), the first air pipe (230) being provided with a first air blowing port (231); the second air source component comprises a second air pipe (240), the second air pipe (240) being provided with a second air blowing port (241), wherein the first air blowing port (231) is used to generate a driving airflow for rotating the rotating impeller (220) around the first direction, and the second air blowing port (241) is used to generate a driving airflow for rotating the rotating impeller (220) around the second direction.

7. The epitaxial device according to claim 5, characterized in that: The first gas source component is provided with a first gas inlet (234), the second gas source component is provided with a second gas inlet (244), the hollow cavity (022) is a semi-cylindrical structure, the generatrix direction of the hollow cavity (022) is roughly parallel to the gas inlet direction of the reaction chamber, and the first gas inlet (234) and the second gas inlet (244) face the same end of the hollow cavity (022) along its generatrix direction.

8. The epitaxial device according to claim 4, characterized in that: The rotating assembly further comprises a fixed block (250), wherein the fixed block (250) is arranged in the hollow cavity (022) and fixedly connected to the second cavity (020), and the rotating impeller (220) is rotatably mounted on the fixed block (250).

9. The epitaxial device according to claim 1, wherein: The protective member (100) has a transition edge (111) at the first end (110), the transition edge (111) being formed by the upper surface of the protective member (100) and the side surface of the protective member (100), and the transition edge (111) being provided with a chamfer.

10. The epitaxial device according to any one of claims 1 to 9, characterized in that: The epitaxial device further comprises a support block (300), which is arranged on the second cavity (020) and is used to support the first cavity; the second end (120) of the protective member (100) is rotatably connected to the support block (300).

11. The epitaxial device according to claim 10, characterized in that: The support block (300) is provided with an arc-shaped groove facing the protective member (100), and the extension direction of the arc-shaped groove is parallel to the rotation axis of the protective member (100); the second end (120) of the protective member (100) is provided with an arc-shaped protrusion (121), and the arc-shaped protrusion (121) is rotatably matched with the arc-shaped groove.

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