OPC correction method, device and equipment of surrounding structure and storage medium
By adjusting the position of the lower structure in chip design to meet process parameters, the problem of inconsistent spacing between the upper and lower structures is solved, the yield of finished products is improved, the design efficiency is improved, and repeated corrections are avoided.
Patent Information
- Application Number
- CN202410448473.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-15
- Publication Date
- 2025-10-21
AI Technical Summary
During the chip design process, the edges of the upper and lower structures are too close, resulting in the upper and lower structures not being stacked according to the original design during chip processing and manufacturing, resulting in defective products. The existing OPC correction method is prone to introduce new problems, resulting in low finished product yield and low design efficiency.
By receiving the layout to be processed, it is determined whether the distance between the upper and lower structures is less than the preset threshold, and the position of the lower structure is adjusted to meet the process parameter requirements, avoiding directly changing the edge of the lower structure, and ensuring that the distance between the upper and lower structures meets the process parameters, including indentation and push-out processing.
It improves the yield rate of finished chips, avoids repeated corrections and excessive corrections, reduces the time of chip design correction stage, and improves production efficiency.
Smart Images
Figure CN120821156A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of photolithography correction, and in particular to an OPC correction method, device, equipment and storage medium for an enclosing structure. Background Art
[0002] During the chip design process, due to connection problems between the upper and lower layers, the lower layer structure is often larger and the upper layer structure is smaller, forming an enclosure structure between the upper and lower layers.
[0003] While today's designs don't have a rigid edge distance requirement for small upper structures and larger lower structures, if the edges of the two structures are too close together, insufficient machine precision can still cause the upper and lower structures to not stack as designed during chip manufacturing, leading to defective products. Therefore, Optical Proximity Correction (OPC) is required to correct this structure. Existing methods typically address this by extending the edges of the lower structure outward. However, this change can sometimes further cause the lower structure's layout to fail to meet process parameter requirements, further resulting in defective or bad chips.
[0004] Therefore, how to effectively improve the yield rate of finished chips and avoid repeated rework during the chip design revision stage, which slows down design efficiency, is an urgent problem that needs to be solved by technical personnel in this field. Summary of the Invention
[0005] The purpose of the present invention is to provide an OPC correction method, device, equipment and storage medium for an enclosure structure to solve the problem in the prior art that chips need to be repeatedly reworked during the design correction stage, resulting in low design efficiency and low finished product yield.
[0006] To solve the above technical problems, the present invention provides an OPC correction method for an enclosure structure, comprising:
[0007] receiving a layout to be processed, wherein the layout to be processed includes an enclosing structure;
[0008] Determining whether there is an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold;
[0009] When there is a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determining that the spacing direction is the first direction, and determining whether the spacing between the first lower structure and the second lower structure is less than the readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction;
[0010] When the distance between the first lower structure and the second lower structure is less than the readjustment threshold, the second lower structure is indented toward the surface of the first lower structure, and the first lower structure is pushed out toward the surface of the second lower structure, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
[0011] Optionally, in the OPC correction method for the enclosing structure, before determining whether the distance between the first substructure and the second substructure is less than a readjustment threshold, the method further includes:
[0012] subtracting the distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain a waiting distance;
[0013] The distance to be changed is added to the second process parameter threshold to obtain a readjustment threshold.
[0014] Optionally, in the OPC correction method for the enclosing structure, the step of retracting the second substructure toward the surface of the first substructure and pushing the first substructure toward the surface of the second substructure comprises:
[0015] The first lower structure is pushed out toward the surface of the second lower structure by the distance to be changed, and the second lower structure is then retracted toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
[0016] Optionally, in the OPC correction method for the enclosing structure, after the second substructure is indented toward the surface of the first substructure, the method further includes:
[0017] Determining whether there is a second upper structure above the corresponding second lower structure;
[0018] When the second upper structure exists, determining whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold;
[0019] When the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold, an error report is sent.
[0020] An OPC correction device for an enclosure structure, comprising:
[0021] A receiving module, configured to receive a layout to be processed, wherein the layout to be processed includes an enclosing structure;
[0022] A first judgment module is used to judge whether there is an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold;
[0023] a second judgment module, configured to, when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determine that the spacing direction is a first direction, and to judge whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction;
[0024] An adjustment module is configured to indent the second lower structure toward the surface of the first lower structure and push the first lower structure toward the surface of the second lower structure when the distance between the first lower structure and the second lower structure is less than a readjustment threshold, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than a preset second process parameter threshold.
[0025] Optionally, in the OPC correction device for the enclosing structure, the second judgment module further includes:
[0026] a difference unit, configured to subtract a distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain a distance to be changed;
[0027] The adding unit is configured to add the distance to be changed and a second process parameter threshold to obtain a readjustment threshold.
[0028] Optionally, in the OPC correction device for the enclosing structure, the adjustment module includes:
[0029] a constant value adjustment unit, configured to push the first lower structure toward the surface of the second lower structure by the distance to be changed, and then indent the second lower structure toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
[0030] Optionally, in the OPC correction device for the enclosing structure, the adjustment module further includes:
[0031] A first sub-judgment unit is configured to determine whether a second upper layer structure exists above the corresponding second lower layer structure;
[0032] a second sub-determination unit, configured to, when the second upper structure exists, determine whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold;
[0033] An error reporting unit is configured to send an error report when the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold.
[0034] An OPC correction device for a surrounding structure, comprising:
[0035] memory for storing computer programs;
[0036] A processor is configured to implement the steps of any one of the above-described methods for correcting the OPC of the enclosing structure when executing the computer program.
[0037] A computer-readable storage medium stores a computer program, wherein the computer program, when executed by a processor, implements the steps of any one of the above-mentioned OPC correction methods for an enclosure structure.
[0038] The OPC correction method for an enclosing structure provided by the present invention receives a layout to be processed, wherein the layout to be processed includes an enclosing structure; determines whether there are an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold; when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determines that the spacing direction is a first direction, and determines whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; when the spacing between the first lower structure and the second lower structure is less than the readjustment threshold, indents the second lower structure toward the surface of the first lower structure, and pushes the first lower structure toward the surface of the second lower structure, so that the spacing between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
[0039] In the chip design process, the present invention not only preliminarily checks whether the spacing between the upper structure and the lower structure meets the corresponding process parameter threshold, but also further pre-judges the spacing between the first lower structure whose edge position is to be changed and the second lower structure in the direction of the edge change position, thereby avoiding the situation where the spacing between the first lower structure and the adjacent second lower structure does not meet the process parameter threshold after the edge position is changed. While solving the problem of the spacing between the upper and lower structures not meeting the process parameters, no new problems are introduced, thereby improving the yield of the final product, and the operation is simple and reliable, avoiding the problems of repeated corrections and over-corrections, reducing the time of the chip design correction stage, further saving computing resources, and improving production efficiency. The present invention also provides an OPC correction device, equipment and storage medium for an enclosure structure with the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0041] Figure 1 A schematic flow chart of a specific embodiment of the OPC correction method for an enclosure structure provided by the present invention;
[0042] Figure 2 A schematic flow chart of another specific embodiment of the OPC correction method for the enclosing structure provided by the present invention;
[0043] Figure 3-1 and Figure 3-2 A process diagram of a specific embodiment of the OPC correction method for the enclosing structure provided by the present invention;
[0044] Figure 4 A schematic structural diagram of a specific embodiment of the OPC correction device for the enclosing structure provided by the present invention.
[0045] In the figure, A1-the first lower structure, A2-the second lower structure, B1-the first upper structure, and B2-the second upper structure. DETAILED DESCRIPTION
[0046] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.
[0047] The core of the present invention is to provide an OPC correction method for a surrounding structure, a flow chart of a specific embodiment of the invention is shown as follows: Figure 1 As shown, it is called specific implementation method one, including:
[0048] S101: Receive a layout to be processed, where the layout to be processed includes an enclosing structure.
[0049] The layout to be processed is a chip layout design including an enclosing structure.
[0050] The surrounding structure is an enclosure structure including a smaller upper structure and a larger lower structure.
[0051] S102: Determine whether there is an upper structure and a lower structure in the surrounding structure, the distance between which is smaller than a preset first process parameter threshold.
[0052] The first process parameter is pre-set, and the distance between the upper structure and the lower structure will not be stacked according to the original design due to insufficient machine precision.
[0053] S103: When there are a first upper structure and a first lower structure with a spacing less than the first process parameter threshold, determine that the spacing direction is the first direction, and judge whether the spacing between the first lower structure and the second lower structure is less than the readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction.
[0054] Of course, the first direction is a direction corresponding to the distance between the first upper structure and the first lower structure, the distance between which is less than the first process parameter threshold.
[0055] In this step, it has been determined that there is a combination of upper and lower structures whose spacing in the first direction does not meet the first process parameter threshold requirement. This combination is referred to as the first upper structure and the first lower structure. After determining that the spacing between the first upper structure and the first lower structure in the first direction is unqualified, the present invention will not directly adjust the edge position corresponding to the first lower structure. Instead, it will first consider whether the spacing between the second lower structure adjacent to the first lower structure in the first direction and the first lower structure can continue to meet the corresponding process requirements after the edge position of the first lower structure is adjusted. In other words, although the spacing between the first upper structure and the first lower structure cannot be too small, the spacing between the first lower structure and the second lower structure cannot be too small either.
[0056] S104: When the distance between the first lower structure and the second lower structure is less than the readjustment threshold, the second lower structure is indented toward the surface of the first lower structure, and the first lower structure is pushed toward the surface of the second lower structure, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
[0057] The second parameter threshold is the minimum distance between underlying structures.
[0058] Continuing from the above, in this step, if the measured distance between the first lower structure and the second lower structure does not meet the parameter requirements after the edge adjustment of the first lower structure (i.e., it is less than the readjustment threshold), then not only the position of the surface of the first lower structure facing the second lower structure is adjusted, but also the position of the surface of the second lower structure facing the first lower structure is adjusted. The two surfaces move forward and backward, and while expanding the distance between the first upper structure and the first lower structure in the first direction, the distance between the first lower structure and the second lower structure will not be reduced too much. The retraction of the second lower structure toward the surface of the first lower structure is that the surface moves away from the first lower structure; the extension of the first lower structure toward the surface of the second lower structure is that the surface moves toward the second lower structure.
[0059] Of course, if the distance between the first lower structure and the second lower structure is not less than the readjustment threshold, the edge position of the first lower structure can be directly adjusted so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold.
[0060] Regarding the readjustment threshold, when the readjustment threshold is exceeded, not only the edge position of the first underlying structure is adjusted, but also the edge position of the second underlying structure is adjusted. The readjustment threshold includes multiple determination methods.
[0061] Before determining whether the distance between the first substructure and the second substructure is less than the readjustment threshold, the method further includes:
[0062] A1: Subtract the distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain the distance to be changed.
[0063] In other words, if the edge of the first lower structure is extended according to the to-be-changed distance, the distance between the extended first upper structure and the second upper structure in the first direction will be exactly equal to the preset first process parameter threshold.
[0064] A2: Add the distance to be changed and the second process parameter threshold to obtain a readjustment threshold.
[0065] It can be seen that the setting condition of the readjustment threshold in this step is the sum of the second process parameter threshold and the distance to be changed. In other words, as long as the remaining distance between the first lower structure and the second lower structure after the edge of the first lower structure changes according to the distance to be changed can meet the second process parameter threshold, the readjustment in step S104 will not be performed.
[0066] Correspondingly, the step of retracting the second substructure toward the surface of the first substructure and pushing the first substructure toward the surface of the second substructure includes:
[0067] The first lower structure is pushed out toward the surface of the second lower structure by the distance to be changed, and the second lower structure is then retracted toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
[0068] In this step, the edge positions of the two lower structures are adjusted strictly according to the distance to be changed and the second process parameter threshold, so that the spacing between the first upper structure and the first lower structure in the first direction after adjustment is exactly equal to the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is exactly equal to the second process parameter threshold. This modification method minimizes the changes to the layout to be processed, in other words, it minimizes the impact on other structures, greatly reduces the possibility of errors in the adjusted layout, reduces the probability of repeated design modifications, and improves the yield rate of the finished product.
[0069] The OPC correction method for an enclosing structure provided by the present invention receives a layout to be processed, wherein the layout to be processed includes an enclosing structure; determines whether there are an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold; when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determines that the spacing direction is a first direction, and determines whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; when the spacing between the first lower structure and the second lower structure is less than the readjustment threshold, indents the second lower structure toward the surface of the first lower structure, and pushes the first lower structure toward the surface of the second lower structure, so that the spacing between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is not less than the preset second process parameter threshold. In the chip design process, the present invention not only checks in advance whether the spacing between the upper structure and the lower structure meets the corresponding process parameter threshold, but also further makes a preliminary judgment on the spacing between the first lower structure whose edge position is to be changed and the second lower structure in the direction of the edge change position, thereby avoiding the situation where the spacing between the first lower structure and the adjacent second lower structure does not meet the process parameter threshold after the edge position is changed. While solving the problem of the spacing between the upper and lower structures not meeting the process parameters, no new problems are introduced, thereby improving the yield of the final product, and the operation is simple and reliable, avoiding the problems of repeated corrections and excessive corrections, reducing the time of the chip design correction stage, saving computing resources, and improving production efficiency.
[0070] On the basis of the specific implementation method 1, the subsequent processing of OPC correction is further added to obtain the specific implementation method 2, and the corresponding flow chart is as follows: Figure 2 Shown, including:
[0071] S201: Receive a layout to be processed, where the layout to be processed includes an enclosing structure.
[0072] S202: Determine whether there is an upper structure and a lower structure in the surrounding structure, the distance between which is smaller than a preset first process parameter threshold.
[0073] S203: When there are a first upper structure and a first lower structure with a spacing less than the first process parameter threshold, determine that the spacing direction is the first direction, and judge whether the spacing between the first lower structure and the second lower structure is less than the readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction.
[0074] S204: When the distance between the first lower structure and the second lower structure is less than the readjustment threshold, the second lower structure is indented toward the surface of the first lower structure, and the first lower structure is pushed toward the surface of the second lower structure, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
[0075] S205: Determine whether there is a second upper structure above the second lower structure.
[0076] S206: When the second upper structure exists, determine whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold.
[0077] S207: When the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold, send an error report.
[0078] The difference between this specific embodiment and the above specific embodiment is that, in this specific embodiment, after adjusting the edges of the first lower structure and the second lower structure, the distance between the second upper structure and the second lower structure is further checked, and the remaining steps are the same as the above specific embodiment and will not be repeated here.
[0079] In this specific embodiment, it is further taken into consideration that indenting the second lower structure may cause the distance between the second lower structure and the second upper structure above it to not meet the preset conditions (that is, the third process parameter threshold), and therefore steps S205 to S207 are added to check whether the distance between the second lower structure and the second upper structure in the first direction is less than the preset third process parameter threshold. If it is less than, it means that the distance between the second lower structure and the second upper structure does not meet the preset parameters, and further adjustment is required at this time. However, due to the introduction of more variables, an error report should be sent in time, and the staff should adjust the parameters of the second lower structure, the second upper structure and the surrounding structures to further improve the yield of the finished product.
[0080] Please see Figure 3-1 and Figure 3-2 According to the technical solution provided by the present invention, the OPC correction of the surrounding structure can be achieved by multiple judgments and one adjustment correction. Figure 3-1 and Figure 3-2A1 represents the first lower structure, B1 represents the first upper structure, A2 represents the second lower structure, B2 represents the second upper structure, and the first direction is the horizontal direction in the figure.
[0081] Assume that the distance between the first lower structure and the first upper structure in the first direction is less than the first process parameter threshold a (denoted as <a in the figure), the distance between the two lower structures in the first direction is less than the sum of the second process parameter threshold s and the distance to be changed c (denoted as <s+c in the figure), and the distance between the second upper structure and the second lower structure in the first direction is greater than the sum of the first process parameter threshold a and the distance to be changed c (denoted as >a+c in the figure), then after steps S101 to S105, Figure 3-1 Transformed into Figure 3-2 , the first lower layer structure is offset (bias) outwardly by a distance c toward the surface of the second lower layer structure, and the second lower layer structure is offset (bias) inwardly by a distance c (denoted as -c in the figure) toward the surface of the first lower layer structure, and the spacing between the structures in the layout still meets the requirements of the first process parameter threshold, the second process parameter threshold and the third process parameter threshold.
[0082] The OPC correction device for an enclosure structure provided by an embodiment of the present invention is introduced below. The OPC correction device for an enclosure structure described below and the OPC correction method for an enclosure structure described above can be referred to each other.
[0083] Figure 4 The structural block diagram of the OPC correction device for the enclosing structure provided by the embodiment of the present invention is shown in FIG. Figure 4 The OPC correction device of the surrounding structure may include:
[0084] A receiving module 100 is configured to receive a layout to be processed, wherein the layout to be processed includes an enclosing structure;
[0085] The first judgment module 200 is used to judge whether there is an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold;
[0086] The second judgment module 300 is configured to, when there is a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determine that the spacing direction is a first direction, and judge whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction;
[0087] The adjustment module 400 is used to indent the second lower structure toward the surface of the first lower structure and push the first lower structure toward the surface of the second lower structure when the distance between the first lower structure and the second lower structure is less than the readjustment threshold, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
[0088] As a preferred implementation, the second determination module 300 further includes:
[0089] a difference unit, configured to subtract a distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain a distance to be changed;
[0090] The adding unit is configured to add the distance to be changed and a second process parameter threshold to obtain a readjustment threshold.
[0091] As a preferred embodiment, the adjustment module 400 includes:
[0092] a constant value adjustment unit, configured to push the first lower structure toward the surface of the second lower structure by the distance to be changed, and then indent the second lower structure toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
[0093] As a preferred embodiment, the adjustment module 400 further includes:
[0094] A first sub-judgment unit is configured to determine whether a second upper layer structure exists above the corresponding second lower layer structure;
[0095] a second sub-determination unit, configured to, when the second upper structure exists, determine whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold;
[0096] An error reporting unit is configured to send an error report when the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold.
[0097] The OPC correction device for an enclosing structure provided by the present invention includes a receiving module 100 for receiving a layout to be processed, the layout to be processed including an enclosing structure; a first judgment module 200 for judging whether there are upper structures and lower structures in the enclosing structure whose spacing is less than a preset first process parameter threshold; a second judgment module 300 for, when a first upper structure and a first lower structure exist, determining that the spacing direction is a first direction, and judging whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; and an adjustment module 400 for, when the spacing between the first lower structure and the second lower structure is less than the readjustment threshold, indenting the second lower structure toward the surface of the first lower structure and pushing the first lower structure toward the surface of the second lower structure, so that the spacing between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is not less than the preset second process parameter threshold. In the chip design process, the present invention not only checks in advance whether the spacing between the upper structure and the lower structure meets the corresponding process parameter threshold, but also further makes a preliminary judgment on the spacing between the first lower structure whose edge position is to be changed and the second lower structure in the direction of the edge change position, thereby avoiding the situation where the spacing between the first lower structure and the adjacent second lower structure does not meet the process parameter threshold after the edge position is changed. While solving the problem of the spacing between the upper and lower structures not meeting the process parameters, no new problems are introduced, thereby improving the yield of the final product, and the operation is simple and reliable, avoiding the problems of repeated corrections and excessive corrections, reducing the time of the chip design correction stage, saving computing resources, and improving production efficiency.
[0098] The OPC correction device for the enclosing structure of this embodiment is used to implement the aforementioned OPC correction method for the enclosing structure. Therefore, the specific implementation of the OPC correction device for the enclosing structure can be seen in the embodiment part of the OPC correction method for the enclosing structure in the previous text. For example, the receiving module 100, the first judgment module 200, the second judgment module 300, and the adjustment module 400 are respectively used to implement steps S101, S102, S103, and S104 in the aforementioned OPC correction method for the enclosing structure. Therefore, its specific implementation can refer to the description of the corresponding embodiments of each part and will not be repeated here.
[0099] The present invention also provides an OPC correction device for an enclosure structure, comprising:
[0100] memory for storing computer programs;
[0101] A processor, configured to implement the steps of any of the above-described OPC correction methods for an enclosing structure when executing the computer program. The OPC correction method for an enclosing structure provided by the present invention comprises receiving a layout to be processed, the layout to be processed comprising an enclosing structure; determining whether there are upper structures and lower structures in the enclosing structure whose spacing is less than a preset first process parameter threshold; when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determining that the spacing direction is a first direction, and determining whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; when the spacing between the first lower structure and the second lower structure is less than the readjustment threshold, retracting the second lower structure toward the surface of the first lower structure, and pushing the first lower structure toward the surface of the second lower structure, so that the spacing between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is not less than the preset second process parameter threshold. In the chip design process, the present invention not only checks in advance whether the spacing between the upper structure and the lower structure meets the corresponding process parameter threshold, but also further makes a preliminary judgment on the spacing between the first lower structure whose edge position is to be changed and the second lower structure in the direction of the edge change position, thereby avoiding the situation where the spacing between the first lower structure and the adjacent second lower structure does not meet the process parameter threshold after the edge position is changed. While solving the problem of the spacing between the upper and lower structures not meeting the process parameters, no new problems are introduced, thereby improving the yield of the final product, and the operation is simple and reliable, avoiding the problems of repeated corrections and excessive corrections, reducing the time of the chip design correction stage, saving computing resources, and improving production efficiency.
[0102] The present invention also provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the OPC correction method for an enclosing structure as described in any one of the above are implemented. The OPC correction method for an enclosing structure provided by the present invention comprises: receiving a layout to be processed, the layout to be processed including an enclosing structure; determining whether there are upper structures and lower structures in the enclosing structure whose spacing is less than a preset first process parameter threshold; when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determining that the spacing direction is a first direction, and determining whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; when the spacing between the first lower structure and the second lower structure is less than the readjustment threshold, retracting the second lower structure toward the surface of the first lower structure, and pushing the first lower structure toward the surface of the second lower structure, so that the spacing between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the spacing between the first lower structure and the second lower structure is not less than the preset second process parameter threshold. In the chip design process, the present invention not only checks in advance whether the spacing between the upper structure and the lower structure meets the corresponding process parameter threshold, but also further makes a preliminary judgment on the spacing between the first lower structure whose edge position is to be changed and the second lower structure in the direction of the edge change position, thereby avoiding the situation where the spacing between the first lower structure and the adjacent second lower structure does not meet the process parameter threshold after the edge position is changed. While solving the problem of the spacing between the upper and lower structures not meeting the process parameters, no new problems are introduced, thereby improving the yield of the final product, and the operation is simple and reliable, avoiding the problems of repeated corrections and excessive corrections, reducing the time of the chip design correction stage, saving computing resources, and improving production efficiency.
[0103] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from the other embodiments. Reference can be made to the descriptions of the identical or similar parts between the various embodiments. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the methods.
[0104] It should be noted that, in this specification, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprises", "comprising" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element.
[0105] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the above description has generally described the components and steps of each example according to their functions. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present invention.
[0106] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be implemented directly using hardware, a software module executed by a processor, or a combination of the two. The software module may be placed in a random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
[0107] The above describes in detail the OPC correction method, device, equipment, and storage medium for the enclosure structure provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only intended to help understand the method and core concept of the present invention. It should be noted that, for those skilled in the art, various improvements and modifications may be made to the present invention without departing from the principles of the present invention, and such improvements and modifications also fall within the scope of protection of the claims of the present invention.
Claims
1. An OPC correction method for a surrounding structure, characterized in that: include: receiving a layout to be processed, wherein the layout to be processed includes an enclosing structure; Determining whether there is an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold; When there is a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determining that the spacing direction is the first direction, and determining whether the spacing between the first lower structure and the second lower structure is less than the readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; When the distance between the first lower structure and the second lower structure is less than the readjustment threshold, the second lower structure is indented toward the surface of the first lower structure, and the first lower structure is pushed out toward the surface of the second lower structure, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than the preset second process parameter threshold.
2. The OPC correction method for a surrounding structure according to claim 1, wherein: Before determining whether the distance between the first substructure and the second substructure is less than the readjustment threshold, the method further includes: subtracting the distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain a waiting distance; The distance to be changed is added to the second process parameter threshold to obtain a readjustment threshold.
3. The OPC correction method for the enclosing structure according to claim 2, wherein: The step of retracting the second lower structure toward the surface of the first lower structure and pushing the first lower structure toward the surface of the second lower structure comprises: The first lower structure is pushed out toward the surface of the second lower structure by the distance to be changed, and the second lower structure is then retracted toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
4. The OPC correction method for a surrounding structure according to claim 1, wherein: After the second substructure is indented toward the surface of the first substructure, the method further comprises: Determining whether there is a second upper structure above the corresponding second lower structure; When the second upper structure exists, determining whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold; When the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold, an error report is sent.
5. An OPC correction device for an enclosure structure, characterized in that: include: A receiving module, configured to receive a layout to be processed, wherein the layout to be processed includes an enclosing structure; A first judgment module is used to judge whether there is an upper structure and a lower structure in the enclosing structure whose spacing is less than a preset first process parameter threshold; a second judgment module, configured to, when there are a first upper structure and a first lower structure whose spacing is less than the first process parameter threshold, determine that the spacing direction is a first direction, and to judge whether the spacing between the first lower structure and the second lower structure is less than a readjustment threshold; wherein the second lower structure is a structure adjacent to the first lower structure in the first direction; An adjustment module is configured to indent the second lower structure toward the surface of the first lower structure and push the first lower structure toward the surface of the second lower structure when the distance between the first lower structure and the second lower structure is less than a readjustment threshold, so that the distance between the first upper structure and the first lower structure is not less than the first process parameter threshold, and the distance between the first lower structure and the second lower structure is not less than a preset second process parameter threshold.
6. The OPC correction device for the enclosure structure according to claim 5, wherein: The second judgment module further includes: a difference unit, configured to subtract a distance between the first upper structure and the first lower structure that is less than the first process parameter threshold from the first process parameter threshold to obtain a distance to be changed; The adding unit is configured to add the distance to be changed and a second process parameter threshold to obtain a readjustment threshold.
7. The OPC correction device for an enclosure structure according to claim 6, wherein: The adjustment module includes: a constant value adjustment unit, configured to push the first lower structure toward the surface of the second lower structure by the distance to be changed, and then indent the second lower structure toward the surface of the first lower structure until the distance between the first lower structure and the second lower structure in the first direction is equal to the second process parameter threshold.
8. The OPC correction device for an enclosure structure according to claim 5, wherein: The adjustment module further includes: A first sub-judgment unit is configured to determine whether a second upper layer structure exists above the corresponding second lower layer structure; a second sub-determination unit, configured to, when the second upper structure exists, determine whether a distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold; An error reporting unit is configured to send an error report when the distance between the second lower structure and the second upper structure in the first direction is less than a preset third process parameter threshold.
9. An OPC correction device for an enclosure structure, characterized in that: include: memory for storing computer programs; A processor is configured to implement the steps of the OPC correction method for an enclosure structure according to any one of claims 1 to 4 when executing the computer program.
10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the OPC correction method for the enclosure structure according to any one of claims 1 to 4 are implemented.