Semiconductor device
By setting multiple signal paths in the semiconductor device and driving the signal paths in different scanning operations, and using PMOS and NMOS transistors to generate fault detection signals, the problem of difficulty in detecting through-electrode TSV short-circuit faults in the existing technology is solved, and comprehensive detection of connection faults is achieved.
Patent Information
- Application Number
- CN202411818041.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-04-24
- Filing Date
- 2024-12-11
- Publication Date
- 2025-10-24
AI Technical Summary
It is difficult to effectively detect short-circuit faults of through-hole electrodes (TSVs) with existing technologies. The scanning operation can only detect open-circuit faults but cannot fully detect connection faults.
By setting multiple signal paths in a semiconductor device and driving different signal paths respectively in even and odd scan operations, using PMOS and NMOS transistors to generate fault detection signals, and combining logic test circuits and fault detection circuits, connection faults in the signal paths are detected.
The invention realizes comprehensive detection of connection faults of through-hole electrodes TSV, including open circuit and short circuit faults, thereby improving the comprehensiveness and accuracy of detection.
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Abstract
Citation Information
Patent Citations
Seasoning method
KR1020240055010A