Collimation device and semiconductor process chamber

Abstract

The invention provides a collimation device and a semiconductor process chamber, the collimation device comprises a collimation main body, a shielding main body and a potential transition piece, the collimation main body is used for collimating particles, the shielding main body is annular and surrounds the collimation main body, the top of the shielding main body extends upwards relative to the collimation main body, the potential transition piece is annular, and the shielding main body extends upwards relative to the collimation main body. And the potential transition piece is arranged above the shielding main body, is insulated from the shielding main body and is arranged between the shielding main body and a target material of the semiconductor process chamber. According to the collimation device and the semiconductor process chamber provided by the invention, the probability of a sparking phenomenon between the top edge of the collimation device and the target material can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a collimating device and a semiconductor process chamber. BACKGROUND

[0002] At present, a semiconductor process chamber used in some semiconductor deposition processes can include a chamber body, a supporting device, a target material and a collimating device, wherein the supporting device is arranged in the chamber body and used for carrying a wafer, the target material is arranged at the top of the chamber body and above the supporting device and opposite to the supporting device, and the collimating device is arranged in the chamber body and includes a collimating main body and a shielding main body connected with each other, the collimating main body is provided with a plurality of vertical through holes and located between the target material and the supporting device, and the shielding main body is arranged in a ring shape around the collimating main body and extends upward relative to the collimating main body and used for shielding the inner circumferential wall of the chamber body.

[0003] In the semiconductor deposition process, the wafer is carried on the supporting device and can be loaded with a negative bias voltage, argon gas can be introduced into the chamber body, the target material can be loaded with a negative bias voltage, and the collimating device can be loaded with a positive bias voltage, the negative bias voltage of the target material can make the argon gas generate plasma and attract positively charged argon ions to bombard the target material, so that the target material has metal particles escaping, the negative bias voltage of the supporting device can attract the escaping metal particles to move downward toward the wafer, so that the escaping metal particles can be deposited on the wafer after passing through the plurality of vertical through holes of the collimating main body, the vertical through holes can filter out metal particles with too large incident angles, and the positive bias voltage of the collimating device can make the vertical through holes have an electric field to adjust the movement direction of the metal particles passing through the vertical through holes, so that the metal particles passing through the vertical through holes can move toward the wafer in a direction close to perpendicular to the wafer, thereby enabling the metal particles to be smoothly deposited in the through holes or grooves with a large aspect ratio on the wafer, and the shielding main body of the collimating device can avoid the metal particles in the semiconductor deposition process from being deposited on the inner circumferential wall of the chamber body by shielding the inner circumferential wall of the chamber body.

[0004] However, in the prior art, the phenomenon of striking fire easily occurs between the top edge of the collimating device and the target material during the semiconductor process. SUMMARY

[0005] The present application aims to at least solve one of the technical problems existing in the prior art, and proposes a collimating device and a semiconductor process chamber which can reduce the probability of the phenomenon of striking fire occurring between the top edge of the collimating device and the target material.

[0006] To achieve the purpose of the present application, a collimating device is provided, comprising a collimating body, a shielding body and a potential transition piece, the collimating body is used for collimating particles, the shielding body is annular and is arranged around the collimating body, and the top of the shielding body extends upward relative to the collimating body, the potential transition piece is annular and is arranged above the shielding body, is insulated from the shielding body, and is used for being arranged between the shielding body and a target of a semiconductor process chamber.

[0007] Optionally, the potential transition piece is arranged on the top surface of the shielding body.

[0008] Optionally, the collimating device further comprises a first insulation piece, the first insulation piece is arranged on the top surface of the shielding body, and the potential transition piece is arranged on the first insulation piece.

[0009] Optionally, the collimating device further comprises a first shielding structure, the first shielding structure is arranged opposite to the first insulation piece and is used for shielding the first insulation piece.

[0010] Optionally, the first insulation piece is annular, the potential transition piece comprises a first shielding part and a first connecting part, the top surface of the shielding body is provided with a second shielding part, the first shielding part and the second shielding part are both annular and are arranged within the ring of the first insulation piece, and gaps are formed between the first insulation piece, the first shielding part and the second shielding part, and part of one of the first shielding part and the second shielding part is arranged within the ring of the other to form a labyrinth structure, the first connecting part is annular and is connected with the top surface of the first insulation piece and the first shielding part respectively, and the first connecting part, the first shielding part and the second shielding part constitute the first shielding structure.

[0011] Optionally, part of the first shielding part is arranged within the ring of the second shielding part.

[0012] Optionally, the gap between the first connecting part and the target is 2mm-3mm, and / or the gap between the second shielding part and the first shielding part is 2mm-3mm.

[0013] Optionally, the potential transition piece is arranged on the inner wall of a chamber body of a semiconductor process chamber, is insulated from the chamber body, and has a gap between the top surface of the shielding body.

[0014] Optionally, the collimating device further comprises a second insulation piece, the second insulation piece is arranged on the inner wall of the chamber body, and the potential transition piece is arranged on the second insulation piece.

[0015] Optionally, the collimating device further comprises a second shielding structure, which is arranged opposite to the gap between the potential transition piece and the top surface of the shielding body, and is used for shielding the gap between the potential transition piece and the top surface of the shielding body.

[0016] Optionally, the potential transition piece comprises a third shielding part and a second connecting part, the third shielding part is annular and arranged in the ring of the shielding body, and the second connecting part is annular and connected with the second insulating piece and the third shielding part respectively, and the third shielding part serves as the second shielding structure.

[0017] Optionally, the gap between the potential transition piece and the top surface of the shielding body is 10-50 mm.

[0018] The application further provides a semiconductor process chamber, which comprises a chamber body and the collimating device provided by the application, the collimating device is arranged in the chamber body and can be electrically connected with a bias power supply for providing a bias voltage, and is used for collimating particles.

[0019] Optionally, the semiconductor process chamber further comprises an insulating connecting piece and a conductive connecting piece, the collimating device is connected with the chamber body through the insulating connecting piece and is electrically connected with the bias power supply through the conductive connecting piece.

[0020] Optionally, the insulating connecting piece is annular, the top of the insulating connecting piece is provided with a top protruding part, the bottom of the insulating connecting piece is provided with a bottom protruding part, the peripheral wall of the chamber body is provided with an annular assembly opening for assembling the insulating connecting piece, the top of the assembly opening is provided with a top recess for assembling the top protruding part, and the bottom of the assembly opening is provided with a bottom recess for assembling the bottom protruding part.

[0021] The conductive connecting piece is annular, the insulating connecting piece is provided with an annular mounting opening for mounting the conductive connecting piece, the collimating device has an annular assembly part, and the conductive connecting piece is provided with an annular assembly groove for assembling the assembly part.

[0022] The application has the following beneficial effects:

[0023] The collimating device provided by the present application can set the potential transition piece between the shielding body and the target material arranged on the top of the chamber body when the collimating device is assembled into the chamber body of the semiconductor process chamber, compared with the prior art, the potential transition piece is additionally arranged between the shielding body and the target material, the top edge of the potential transition piece becomes the top edge of the collimating device, the potential transition piece can shield the inner circumferential wall of the chamber body as the upward extension of the shielding body by arranging the potential transition piece in a ring shape, the potential of the potential transition piece can be between the potential of the shielding body and the potential of the target material by insulating the potential transition piece from the shielding body, the potential difference between the potential transition piece and the target material can be smaller than the potential difference between the shielding body and the target material in the prior art, so that the potential difference between the top edge of the collimating device and the target material can be reduced, and the probability of gas breakdown between the top edge of the collimating device and the target material can be reduced, and the probability of sparking phenomenon between the top edge of the collimating device and the target material can be reduced.

[0024] The semiconductor process chamber provided by the present application can reduce the probability of sparking phenomenon between the top edge of the collimating device and the target material by arranging the collimating device provided by the present application in the chamber body. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 A structure schematic diagram of a collimating device provided by an embodiment of the present application;

[0026] Figure 2 A structure schematic diagram of a collimating device and a semiconductor process chamber provided by an embodiment of the present application;

[0027] Figure 3 An electrostatic induction schematic diagram of a collimating device provided by an embodiment of the present application;

[0028] Figure 4 A partial enlarged structure schematic diagram of a collimating device provided by an embodiment of the present application;

[0029] Figure 5 A structure schematic diagram of a collimating device and a chamber body provided by an embodiment of the present application;

[0030] Figure 6 A structure schematic diagram of another collimating device and a semiconductor process chamber provided by an embodiment of the present application;

[0031] BRIEF DESCRIPTION OF DRAWINGS

[0032] 1-collimation device; 11-collimation body; 12-shielding body; 121-second shielding part; 122-assembly part; 13-potential transition piece; 131-first connecting part; 132-first shielding part; 133-second connecting part; 134-third shielding part; 14-first insulating part; 15-second insulating part; 16-insulating connecting piece; 161-top protrusion; 162-bottom protrusion; 17-conductive connecting piece; 18-threaded connecting piece; 100-semiconductor process chamber; 101-chamber body; 102-target material; 103-carrying device; 200-bias power supply. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the technical solution of the present invention, the causes of the spark phenomenon that is easily generated between the top edge of the collimating device and the target material during the semiconductor process in the prior art are first introduced.

[0034] The inventors of the present invention have discovered that, in the prior art, the top edge of the shielding body serves as the top edge of the collimating device. In order to shield the inner circumferential wall of the chamber body, the shielding body extends upward until the gap between the top edge of the shielding body and the target is very small (mm level). Furthermore, during the semiconductor process, the gap between the top edge of the shielding body and the target may continue to decrease due to thermal expansion of the shielding body. During the semiconductor process, the target and the shielding body are loaded with bias voltages of opposite polarity, which results in a large potential difference between the shielding body and the target, while the gap between the top edge of the shielding body and the target is very small. In other words, the potential difference between the top edge of the collimating device and the target is large, while the gap is very small. This makes it easy for the gas between the top edge of the collimating device and the target to be broken down, and further causes sparks to easily occur between the top edge of the collimating device and the target.

[0035] The collimation device and the semiconductor process chamber provided by the present invention are described in detail below with reference to the accompanying drawings.

[0036] like Figure 1 、 Figure 2 and Figure 6 As shown, an embodiment of the present invention provides a collimation device 1, including a collimation body 11, a shielding body 12 and a potential transition piece 13. The collimation body 11 is used to collimate particles. The shielding body 12 is annular and is arranged around the collimation body 11, and the top of the shielding body 12 extends upward relative to the collimation body 11. The potential transition piece 13 is annular and is arranged above the shielding body 12 and is insulated from the shielding body 12. The potential transition piece 13 is used to be arranged between the shielding body 12 and the target material 102 of the semiconductor process chamber.

[0037] The collimating device 1 provided by the embodiment of the present application can make the potential transition piece 13 be arranged between the shielding body 12 and the target material 102 arranged on the top of the chamber body 101 when the collimating device 1 is assembled into the chamber body 101 of the semiconductor process chamber 100, compared with the prior art, the potential transition piece 13 is additionally arranged between the shielding body 12 and the target material 102, the top edge of the potential transition piece 13 becomes the top edge of the collimating device 1, the potential transition piece 13 can shield the inner circumferential wall of the chamber body 101 as the upward extension of the shielding body 12 by making the potential transition piece 13 annular, the potential of the potential transition piece 13 can be between the potential of the shielding body 12 and the potential of the target material 102 by making the potential transition piece 13 insulated from the shielding body 12, the potential difference between the potential transition piece 13 and the target material 102 can be less than the potential difference between the shielding body 12 and the target material 102 in the prior art, so that the potential difference between the top edge of the collimating device 1 and the target material 102 can be reduced, and then the probability of gas breakdown between the top edge of the collimating device 1 and the target material 102 can be reduced, and then the probability of sparking phenomenon between the top edge of the collimating device 1 and the target material 102 can be reduced.

[0038] As shown in Figures 1-3 for example, in actual application, the target material 102 can be loaded with a negative bias voltage of-500V (ground potential), the collimating body 11 and the shielding body 12 can be loaded with a positive bias voltage of 80V (ground potential), because the size of the collimating device 1 and the size of the target material 102 are much larger than the gap between the top edge of the potential transition piece 13 and the target material 102, the electric field between the collimating body 11 and the target material 102 is approximately a uniform electric field, the potential between the collimating body 11 and the target material 102 is approximately linearly reduced from the collimating body 11 to the target material 102, and the potential transition piece 13 is located between the shielding body 12 and the target material 102, under the action of electrostatic induction, the potential of the potential transition piece 13 is close to-210V, for example, the potential of the potential transition piece 13 can be-200V at this time, the potential difference between the potential transition piece 13 and the target material 102 is-200V-(-500V) = 300V, and the potential difference between the shielding body 12 and the target material 102 is 80V-(-500V) = 580V, it can be seen that the potential difference between the potential transition piece 13 and the target material 102 is less than the potential difference between the shielding body 12 and the target material 102, so that the potential difference between the top edge of the collimating device 1 and the target material 102 can be reduced, and then the probability of gas breakdown between the top edge of the collimating device 1 and the target material 102 can be reduced, and then the probability of sparking phenomenon between the top edge of the collimating device 1 and the target material 102 can be reduced.

[0039] Moreover, in practical applications, the absolute value of the negative bias voltage loaded on the target 102 is usually much greater than the absolute value of the positive bias voltage loaded on the collimating body 11 and the shielding body 12. Therefore, the potential of the potential transition piece 13 between the shielding body 12 and the target 102 is usually much smaller than the potential of the collimating body 11 and the shielding body 12, and the potential of the plasma between the collimating body 11 and the target 102 is usually slightly higher than the highest potential of the side wall contacted by the plasma. In other words, the potential of the plasma between the collimating body 11 and the target 102 is usually slightly higher than the potential of the shielding body 12, which makes the potential transition piece 13 have a relatively high potential. The absolute value of the potential difference between the component 13 and the plasma is increased relative to the absolute value of the potential difference between the shielding body 12 and the plasma in the prior art, and the pressure drop of the plasma sheath is increased relative to the pressure drop of the plasma sheath in the prior art, so that the potential of the potential transition component 13 is much smaller than the potential of the plasma, and then the potential transition component 13 can repel electrons escaping from the target material 102, and then can reduce the collision of electrons escaping from the target material 102 with the top edge of the collimation device 1, reduce the loss of electrons, and thus can be beneficial to the ignition in the chamber body 101 and the maintenance of the plasma in the chamber body 101.

[0040] like Figures 1-3 As shown, for example, in actual application, the target 102 can be loaded with a negative bias of -500V (ground potential), and the collimating body 11 and the shielding body 12 can be loaded with a positive bias of 80V (ground potential). Since the potential of the plasma between the collimating body 11 and the target 102 is usually slightly higher than the highest potential of the side wall contacted by the plasma, that is, the potential of the plasma between the collimating body 11 and the target 102 is usually slightly higher than the potential of the shielding body 12. For example, at this time, the potential of the plasma between the collimating body 11 and the target 102 can be 90V (ground potential), and the potential difference between the potential transition piece 13 and the plasma is -2 00V-90V=-290V, and the potential difference between the shielding body 12 and the plasma is 80V-90V=-10V. It can be seen that the absolute value of the potential difference between the potential transition piece 13 and the plasma is larger than the absolute value of the potential difference between the shielding body 12 and the plasma. The potential of the potential transition piece 13 is much smaller than the potential of the plasma, so that the potential transition piece 13 can repel the electrons escaping from the target material 102, and then can reduce the collision of the electrons escaping from the target material 102 with the top edge of the collimation device 1, reduce the loss of electrons, and thus can be beneficial to the ignition in the chamber body 101 and the maintenance of the plasma in the chamber body 101.

[0041] In an embodiment of the present application, the potential transition piece 13 can be grounded (not shown in the figure). In the embodiment where the potential transition piece 13 is grounded, the potential of the potential transition piece 13 is zero, the potential difference between the potential transition piece 13 and the target material 102 is still smaller than the potential difference between the shielding body 12 and the target material 102, and the potential of the potential transition piece 13 is still smaller than the potential of the plasma, which can still reduce the potential difference between the top edge of the collimating device 1 and the target material 102 compared with the prior art, and the potential transition piece 13 can still repel the electrons escaping from the target material 102, but compared with the embodiment where the potential transition piece 13 is not grounded, the potential difference between the potential transition piece 13 and the target material 102 is larger, the potential difference between the top edge of the collimating device 1 and the target material 102 is reduced to a smaller extent, and the potential difference between the potential transition piece 13 and the plasma is smaller, and the ability of the potential transition piece 13 to repel the electrons escaping from the target material 102 is smaller.

[0042] In actual applications, when the potential transition piece 13 is not grounded, the potential transition piece 13 is equivalent to being suspended above the shielding body 12, so that if sparking occurs between the potential transition piece 13 and the target material 102, the electric charge generated by the sparking can accumulate on the potential transition piece 13 without being conducted to the ground, so that the potential difference between the potential transition piece 13 and the target material 102 can be further reduced, thereby further reducing the probability of sparking between the top edge of the collimating device 1 and the target material 102, and thus achieving self-limiting of the collimating device 1.

[0043] Optionally, the process gas can include argon. In this way, the ions of the process gas can include argon ions.

[0044] Optionally, the material of the target material 102 can include copper. In this way, the atoms escaping from the target material 102 can include copper atoms.

[0045] As shown in FIG. 1, in an embodiment of the present application, the potential transition piece 13 can be disposed on the top surface of the shielding body 12. Figures 1-3

[0046] By disposing the potential transition piece 13 on the top surface of the shielding body 12, the potential transition piece 13, the shielding body 12 and the collimating body 11 can be integrated into a one-piece structure, without the need to add new structures in the chamber body 101, thereby reducing the design, change and maintenance costs.

[0047] As shown in FIG. 1, in an embodiment of the present application, the collimating device 1 can further include a first insulating piece 14, the first insulating piece 14 being disposed on the top surface of the shielding body 12, and the potential transition piece 13 being disposed on the first insulating piece 14. Figures 1-3

[0048] ​​Such a design allows the potential transition piece 13 to be disposed on the top surface of the shielding body 12 through the first insulating piece 14 , and to be insulated from the shielding body 12 by the first insulating piece 14 .

[0049] In an embodiment of the present invention, the collimating device 1 may further include a first shielding structure, which is arranged opposite to the first insulating member 14 and is used to shield the first insulating member 14 .

[0050] By shielding the first insulating member 14 with the help of the first shielding structure, metal particles escaping from the target material 102 can be prevented from being deposited on the first insulating member 14, thereby preventing the first insulating member 14 from losing its insulating ability due to the deposition of metal particles, thereby improving the stability and service life of the collimation device 1.

[0051] like Figures 1-4 As shown, in one embodiment of the present invention, the first insulating member 14 may be annular, the potential transition member 13 may include a first shielding portion 132 and a first connecting portion 131, and the top surface of the shielding body 12 may be provided with a second shielding portion 121. The first shielding portion 132 and the second shielding portion 121 are both annular and are both arranged within the ring of the first insulating member 14. There are gaps between the first insulating member 14, the first shielding portion 132 and the second shielding portion 121, and a portion of one of the first shielding portion 132 and the second shielding portion 121 is arranged within the ring of the other to form a maze structure. The first connecting portion 131 is annular and is respectively connected to the top surface of the first insulating member 14 and the first shielding portion 132. The first connecting portion 131, the first shielding portion 132 and the second shielding portion 121 constitute a first shielding structure.

[0052] Such a design can shield the top surface of the first insulating part 14 with the help of the first connecting part 131, and can shield the inner wall of the first insulating part 14 with the help of the maze structure formed by the first shielding part 132 and the second shielding part 121, so that the first connecting part 131, the first shielding part 132 and the second shielding part 121 can constitute a first shielding structure to shield the first insulating part 14.

[0053] Optionally, the first insulating member 14 and the top surface of the shielding body 12 may be welded (eg, soldered).

[0054] Optionally, the first connection portion 131 and the first insulating member 14 may be welded (eg, soldered).

[0055] Optionally, the first shielding portion 132 and the first connecting portion 131 may be an integral structure.

[0056] Optionally, the shielding body 12 may be made of metal.

[0057] Optionally, the first insulating member 14 may be made of ceramic.

[0058] Optionally, the first connection portion 131 may be made of metal.

[0059] Optionally, the first shielding portion 132 may be made of metal.

[0060] Optionally, the second shielding portion 121 may be made of metal.

[0061] like Figures 1-4 As shown, in one embodiment of the present invention, part of the first shielding portion 132 may be disposed within the ring of the second shielding portion 121 .

[0062] Such a design can make the opening of the labyrinth structure formed by the first shielding portion 132 and the second shielding portion 121 face downward, that is, toward the top surface of the shielding body 12 , thereby reducing the amount of film particles that enter the labyrinth structure.

[0063] like Figure 4 As shown, in one embodiment of the present invention, the gap between the first connecting portion 131 and the target 102 (eg Figure 4 The gap A shown in FIG. 1 may be 2 mm to 3 mm, and / or the gap between the second shielding portion 121 and the first shielding portion 132 (as shown in FIG. Figure 4 The middle gap (shown as B) can be 2mm-3mm.

[0064] In practical applications, the smaller the gap between the first connecting portion 131 and the target 102, the closer the potential of the potential transition piece 13 is to that of the target 102. The larger the gap between the first connecting portion 131 and the target 102, the closer the potential of the potential transition piece 13 is to that of the shielding body 12. The smaller the gap between the second shielding portion 121 and the first shielding portion 132, the closer the potential of the potential transition piece 13 is to that of the shielding body 12. The larger the gap between the second shielding portion 121 and the first shielding portion 132, the closer the potential of the potential transition piece 13 is to that of the target 102.

[0065] like Figure 6 As shown, in one embodiment of the present invention, the potential transition piece 13 can be used to be set on the inner wall of the chamber body 101 of the semiconductor process chamber 100, and is insulated from the chamber body 101, and has a gap between it and the top surface of the shielding body 12.

[0066] That is, the potential transition piece 13 may not be disposed on the top surface of the shielding body 12 , but may be disposed on the inner wall of the chamber body 101 of the semiconductor process chamber 100 with a gap between it and the top surface of the shielding body 12 .

[0067] like Figure 6As shown, in one embodiment of the present invention, the collimating device 1 may further include a second insulating member 15 , which is used to be arranged on the inner wall of the chamber body 101 , and the potential transition member 13 is arranged on the second insulating member 15 .

[0068] Such a design allows the potential transition piece 13 to be disposed on the inner wall of the chamber body 101 through the second insulating piece 15 , and to be insulated from the chamber body 101 by the second insulating piece 15 .

[0069] In one embodiment of the present invention, the collimation device 1 may further include a second shielding structure, which is arranged relative to the gap between the potential transition piece 13 and the top surface of the shielding body 12, and is used to shield the gap between the potential transition piece 13 and the top surface of the shielding body 12.

[0070] By shielding the gap between the potential transition piece 13 and the top surface of the shielding body 12 with the help of the second shielding structure, it is possible to prevent metal particles escaping from the target material 102 from passing through the gap between the potential transition piece 13 and the top surface of the shielding body 12 and depositing on the inner wall of the chamber body 101, thereby improving the service life of the chamber body 101.

[0071] like Figure 6 As shown, in one embodiment of the present invention, the potential transition member 13 may include a third shielding portion 134 and a second connecting portion 133. The third shielding portion 134 is annular and is arranged in the ring of the shielding body 12. The second connecting portion 133 is annular and is respectively connected to the second insulating member 15 and the third shielding portion 134. The third shielding portion 134 serves as a second shielding structure.

[0072] Such a design enables the third shielding portion 134 to serve as a second shielding structure to shield the gap between the potential transition piece 13 and the top surface of the shielding body 12 .

[0073] Optionally, the third shielding portion 134 and the second connecting portion 133 may be an integral structure.

[0074] Optionally, the second connection portion 133 may be made of metal.

[0075] Optionally, the third shielding portion 134 may be made of metal.

[0076] In one embodiment of the present invention, the gap between the potential transition piece 13 and the top surface of the shielding body 12 may be 10 mm to 50 mm.

[0077] like Figure 2 and Figure 6As shown in the figures, the embodiment of the present application further provides a semiconductor process chamber 100, which comprises a chamber body 101 and a collimating device 1 provided by the embodiment of the present application, the collimating device 1 is arranged in the chamber body 101 and can be electrically connected with a bias power supply 200 for providing a bias voltage to collimate the particles.

[0078] The semiconductor process chamber 100 provided by the embodiment of the present application can reduce the probability of the sparking phenomenon between the top edge of the collimating device 1 and the target material 102 by arranging the collimating device 1 provided by the embodiment of the present application in the chamber body 101.

[0079] As shown in the figures, the embodiment of the present application further provides a semiconductor process chamber 100, which comprises a chamber body 101 and a collimating device 1 provided by the embodiment of the present application, the collimating device 1 is arranged in the chamber body 101 and can be electrically connected with a bias power supply 200 for providing a bias voltage to collimate the particles. Figure 2 Figure 5 As shown in the figures, in an embodiment of the present application, the semiconductor process chamber 100 can further comprise an insulating connecting member 16 and a conductive connecting member 17, the collimating device 1 is insulatively connected with the chamber body 101 through the insulating connecting member 16 and is electrically connected with the bias power supply 200 through the conductive connecting member 17.

[0080] Specifically, the shielding body 12 can be annular and arranged around the collimating body 11, the shielding body 12 is insulatively connected with the chamber body 101 through the insulating connecting member 16, so that the collimating body 11 and the shielding body 12 are insulatively connected with the chamber body 101 through the insulating connecting member 16, i.e., the collimating device 1 is insulatively connected with the chamber body 101 through the insulating connecting member 16, and the shielding body 12 is electrically connected with the bias power supply 200 through the conductive connecting member 17, so that the collimating body 11 and the shielding body 12 are electrically connected with the bias power supply 200 through the conductive connecting member 17, i.e., the collimating device 1 is electrically connected with the bias power supply 200 through the conductive connecting member 17.

[0081] Optionally, the material of the insulating connecting member 16 can be ceramic.

[0082] Optionally, the material of the conductive connecting member 17 can be metal.

[0083] As shown in the figures, in an embodiment of the present application, the insulating connecting member 16 can be annular, and the top of the insulating connecting member 16 can be provided with a top protruding part 161 and the bottom of the insulating connecting member 16 can be provided with a bottom protruding part 162, the peripheral wall of the chamber body 101 is provided with an annular assembly opening for assembling the insulating connecting member 16, and the top of the assembly opening is provided with a top recess for assembling the top protruding part 161 and the bottom of the assembly opening is provided with a bottom recess for assembling the bottom protruding part 162; the conductive connecting member 17 can be annular, the insulating connecting member 16 is provided with an annular mounting opening for mounting the conductive connecting member 17, and the collimating device 1 has an annular assembly part 122, and the conductive connecting member 17 is provided with an annular assembly groove for assembling the assembly part 122. Figure 2 Figure 5

[0084] ​​​In actual application, the insulating connector 16 can be assembled in the assembling opening, the top protrusion 161 can be assembled in the top recess, the bottom protrusion 162 can be assembled in the bottom recess, and the top protrusion 161 and the bottom protrusion 162 can limit the assembling position of the insulating connector 16 in the assembling opening. The conductive connector 17 is installed in the installing opening, the assembling part 122 can be assembled in the assembling groove, the conductive connector 17 can be provided with a through hole, the assembling part 122 can be provided with a threaded hole, by passing the threaded connector 18 through the through hole and screwing the threaded connector 18 with the threaded hole, the shielding body 12 can be connected with the conductive connector 17, the shielding body 12 can be connected and insulated with the chamber body 101 through the conductive connector 17 and the insulating connector 16, and the conductive connector 17 can be electrically connected with the bias voltage source 200, so that the shielding body 12 can be electrically connected with the bias voltage source 200 through the conductive connector 17.

[0085] As shown in Figure 2 and Figure 6 In an embodiment of the present application, the semiconductor process chamber 100 can further include a target 102 and a carrier device 103, the target 102 is arranged at the top of the chamber body 101, the carrier device 103 is arranged in the chamber body 101 and used for carrying a wafer, the collimating body 11 is located between the target 102 and the carrier device 103, and the top of the shielding body 12 can surround the bottom of the target 102.

[0086] In summary, the collimating device 1 and the semiconductor process chamber 100 provided by the embodiment of the present application can reduce the probability of the sparking phenomenon occurring between the top edge of the collimating device 1 and the target 102.

[0087] It can be understood that the above embodiments are only exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and essence of the present application, and these modifications and improvements are also regarded as the protection scope of the present application.

Claims

1. A collimating device, characterized by, The collimating device comprises a collimating body, a shielding body and a potential transition piece, the collimating body is used for collimating particles, the shielding body is annular and is arranged around the collimating body, and a top of the shielding body extends upward relative to the collimating body, the potential transition piece is annular, is arranged above the shielding body, is insulated from the shielding body, and is used for being arranged between the shielding body and a target of a semiconductor process chamber.

2. The collimating device of claim 1, wherein, The potential transition piece is arranged on a top surface of the shielding body.

3. The collimating device of claim 2, wherein, The collimating device further comprises a first insulation piece arranged on the top surface of the shielding body, and the potential transition piece is arranged on the first insulation piece.

4. The collimating device of claim 3, wherein, The collimating device further comprises a first shielding structure arranged opposite to the first insulation piece and used for shielding the first insulation piece.

5. The collimating device of claim 4, wherein, The first insulation piece is annular, the potential transition piece comprises a first shielding part and a first connecting part, the top surface of the shielding body is provided with a second shielding part, the first shielding part and the second shielding part are both annular and are arranged within the first insulation piece, gaps are formed between the first insulation piece, the first shielding part and the second shielding part, a part of one of the first shielding part and the second shielding part is arranged within a ring of the other to form a labyrinth structure, and the first connecting part is annular and is connected with the top surface of the first insulation piece and the first shielding part respectively, the first connecting part, the first shielding part and the second shielding part constitute the first shielding structure.

6. The collimating device of claim 5, wherein, A part of the first shielding part is arranged within a ring of the second shielding part.

7. The collimating device of claim 5, wherein, A gap between the first connecting part and the target is 2mm-3mm, and / or a gap between the second shielding part and the first shielding part is 2mm-3mm.

8. The collimating device of claim 1, wherein, The potential transition piece is arranged on an inner wall of a chamber body of a semiconductor process chamber, is insulated from the chamber body, and has a gap between the top surface of the shielding body.

9. The collimating device of claim 8, wherein, The collimating device further comprises a second insulation piece arranged on the inner wall of the chamber body, and the potential transition piece is arranged on the second insulation piece.

10. The collimating device of claim 9, wherein, The collimating device further comprises a second shielding structure arranged opposite to the gap between the potential transition piece and the top surface of the shielding body and used for shielding the gap between the potential transition piece and the top surface of the shielding body.

11. The collimating device of claim 10, wherein, The potential transition piece comprises a third shielding part and a second connecting part, the third shielding part is annular and is arranged within a ring of the shielding body, and the second connecting part is annular and is connected with the second insulation piece and the third shielding part respectively, and the third shielding part serves as the second shielding structure.

12. The collimating device of claim 8, wherein, The gap between the potential transition piece and the top surface of the shielding body is 10mm-50mm.

13. A semiconductor process chamber, characterized by, The collimating device as claimed in any one of claims 1-12 is arranged in a chamber body, is electrically connected with a bias power supply for providing a bias, and is used for collimating particles.

14. The semiconductor process chamber of claim 13, wherein, The semiconductor process chamber further comprises an insulating connecting member and a conductive connecting member, the collimating device is connected with the chamber body through the insulating connecting member in an insulating manner and connected with the bias power supply through the conductive connecting member in an electrically conductive manner.

15. The semiconductor process chamber of claim 14, wherein, The insulating connecting member is annular, and a top of the insulating connecting member is provided with a top protrusion and a bottom of the insulating connecting member is provided with a bottom protrusion, a peripheral wall of the chamber body is provided with an annular assembly opening for assembling the insulating connecting member, and a top of the assembly opening is provided with a top groove for assembling the top protrusion and a bottom of the assembly opening is provided with a bottom groove for assembling the bottom protrusion. The conductive connecting member is annular, the insulating connecting member is provided with an annular mounting opening for mounting the conductive connecting member, and the collimating device has an annular assembly portion, the conductive connecting member is provided with an annular assembly groove for assembling the assembly portion.

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