Semiconductor process equipment and control method thereof

Abstract

The embodiment of the invention provides semiconductor process equipment and a control method thereof, the equipment comprises a process chamber, a gas supply device, a gas extraction device, a first valve, a vacuum gauge and a controller, and the gas extraction device is connected with the process chamber through the first valve; after the equipment executes a warm-up process, the air exhaust device performs air exhaust treatment on the process chamber according to preset parameters, and the vacuum gauge detects the first pressure of the current process chamber and takes the first pressure as the compensation reference pressure; in the process that the equipment executes the mass production process under the preset process pressure, after the mass production process is finished each time, the air exhaust device performs air exhaust treatment on the process chamber according to the preset parameters, and the vacuum gauge detects the second pressure of the current process chamber; the controller is used for determining a first deviation value of the second pressure relative to the compensation reference pressure, and under the condition that the absolute value of the first deviation value is smaller than or equal to a preset value, the opening degree of the first valve is regulated and controlled based on the first deviation value and the preset process pressure in the next mass production process.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor process, and particularly relates to a semiconductor process equipment and a control method thereof. BACKGROUND

[0002] In the process of implementing a semiconductor process, in the case that the pressure condition of a process chamber is relatively harsh, a high-precision vacuum gauge needs to be configured to monitor the pressure of the process chamber. For example, in the process of implementing a light-emitting diode (LED) chip etching process, the mainstream process requires that the pressure of the process chamber be within 10 mTorr, and the process chamber needs to be configured with a high-precision vacuum gauge as a measuring element to monitor the actual pressure of the process chamber at all times during the process. Thus, the vacuum degree of the process chamber is fed back to an actuator (generally a swing valve), so as to control the opening degree of the swing valve, and then adjust the amount of gas drawn by the swing valve to the process chamber during the vacuumizing process, so as to make the pressure of the process chamber meet the process requirements.

[0003] In the process of implementing a semiconductor process, strong corrosive gas is generated in the process chamber, and the by-products are difficult to volatilize. At present, the mainstream vacuum gauge is a metal thin film capacitance gauge. Chemical reaction between the metal thin film and the corrosive gas, or deposition of the process by-products, will cause the zero point of the vacuum gauge to drift, that is, the measured value deviates from the true value. For low-pressure processes, this will have a significant impact on the process results, resulting in a decrease in yield, and in severe cases, even causing wafering.

[0004] Therefore, in the process of implementing a low-pressure semiconductor process flow, the vacuum gauge needs to be frequently calibrated manually to ensure the yield of the chip. In this way, there is a problem of high labor intensity of the operator. SUMMARY

[0005] Embodiments of the present application provide a semiconductor process equipment and a control method thereof to solve the problems in the background art.

[0006] In a first aspect, embodiments of the present application provide a semiconductor process equipment.

[0007] The semiconductor process equipment provided by the embodiments of the present application comprises a process chamber, a gas supply device, a gas extraction device, a first valve, a vacuum gauge and a controller, the gas supply device is used to deliver process gas to the process chamber, the gas extraction device is connected with the process chamber through the first valve;

[0008] After the semiconductor process equipment performs a warm-up process, the gas extraction device is used to perform a gas extraction process on the process chamber according to preset parameters, and the vacuum gauge is used to detect a first pressure of the process chamber at present, wherein the first pressure is a compensation reference pressure.

[0009] In a process that the semiconductor processing equipment performs a mass production process with a preset process pressure, the exhaust device is configured to perform an exhaust process on the process chamber according to the preset parameters after each mass production process, and the vacuum gauge is configured to detect a second pressure of the process chamber; the controller is configured to determine a first deviation value of the second pressure relative to the compensation reference pressure, and in a case that an absolute value of the first deviation value is less than or equal to a preset value, to regulate an opening degree of the first valve based on the first deviation value and the preset process pressure in a process that the next mass production process is performed.

[0010] Optionally, the semiconductor processing equipment further comprises a calibration module.

[0011] In a case that the semiconductor processing equipment is initially delivered, the exhaust device is configured to perform an exhaust process on the process chamber to a background vacuum degree, and the vacuum gauge is configured to detect a third pressure of the process chamber, wherein the third pressure is a zeroing reference pressure, and the vacuum gauge is further configured to send a zeroing reference signal corresponding to the zeroing reference pressure to the calibration module, and the calibration module is configured to store the zeroing reference signal.

[0012] In a process that the semiconductor processing equipment performs a mass production process with a preset process pressure, the controller is further configured to, in a case that the absolute value of the first deviation value is greater than the preset value, control the exhaust device to perform an exhaust process on the process chamber to the background vacuum degree again; the vacuum gauge is configured to detect a fourth pressure of the process chamber, and the vacuum gauge is further configured to send a measured signal corresponding to the fourth pressure to the calibration module and the controller respectively; the controller is further configured to, based on the measured signal, determine the fourth pressure, determine a second deviation value of the fourth pressure relative to the zeroing reference pressure, and send an adjustment signal to the calibration module based on the second deviation value; and the calibration module is configured to perform zero-point calibration based on the adjustment signal, the zeroing reference signal and the measured signal.

[0013] Optionally, the calibration module is provided with a zero calibration circuit, the zero calibration circuit comprises a voltage follower and a resistance adjustable device; the vacuum gauge is electrically connected with a first input end of the voltage follower, an output end of the voltage follower is electrically connected with a second input end of the voltage follower, and the output end of the voltage follower is further electrically connected with the controller; the resistance adjustable device is electrically connected with two bias pins of the voltage follower, and an adjustment signal output end of the controller is electrically connected with an adjustment end of the resistance adjustable device.

[0014] The calibration module is specifically configured to receive the measured signal from the vacuum gauge, receive the adjustment signal from the adjustment signal output end, acquire the zeroing reference signal stored in the calibration module, adjust the resistance of the resistance adjustable device, so that the output signal output from the output end of the voltage follower is equal to the zeroing reference signal, and complete zero point calibration.

[0015] Optionally, during the process in which the semiconductor process equipment performs mass production process of a preset process pressure, and in the case that the absolute value of the first deviation value is less than or equal to the preset value, the resistance of the resistance adjustable device is maintained unchanged.

[0016] Optionally, the preset value is one-tenth of the preset process pressure.

[0017] Optionally, the gas extraction device is configured to extract a background vacuum degree of the process chamber, and specifically includes that: the gas extraction device is configured to, in the case that the first valve is in a fully open state, continuously extract the process chamber for a first preset time length.

[0018] Optionally, the gas extraction device is configured to extract the process chamber according to a preset parameter, and specifically includes that: the gas extraction device is configured to, in the case that the first valve is in a fully open state, continuously extract the process chamber for a second preset time length.

[0019] Optionally, the second preset time length is less than the first preset time length.

[0020] In a second aspect, an embodiment of the present application provides a control method of a semiconductor process equipment.

[0021] The semiconductor process equipment includes a process chamber, a gas supply device, a gas extraction device, a first valve and a vacuum gauge, the gas supply device is configured to supply process gas to the process chamber, the gas extraction device is connected with the process chamber through the first valve;

[0022] The control method of the semiconductor process equipment provided by the embodiment of the present application includes:

[0023] controlling the semiconductor process equipment to perform a warm-up process, and after the semiconductor process equipment performs the warm-up process, controlling the gas extraction device to extract the process chamber according to a preset parameter, and the vacuum gauge is configured to detect a first pressure of the process chamber at present, wherein the first pressure is a compensation reference pressure.

[0024] The control method further includes: when the semiconductor process equipment is initially delivered, controlling the pumping device to pump the process chamber to a background vacuum degree, controlling the vacuum gauge to detect a third pressure of the process chamber, wherein the third pressure is a zeroing reference pressure, controlling the vacuum gauge to send a zeroing reference signal corresponding to the zeroing reference pressure to the calibration module, and controlling the calibration module to store the zeroing reference signal.

[0025] When an absolute value of the first deviation value is less than or equal to a preset value, during the next production process, the opening of the first valve is adjusted based on the first deviation value and the preset process pressure.

[0026] Optionally, the semiconductor process equipment further includes a calibration module.

[0027] The control method further includes: when the semiconductor process equipment is initially delivered, controlling the pumping device to pump the process chamber to a background vacuum degree, controlling the vacuum gauge to detect a third pressure of the process chamber, wherein the third pressure is a zeroing reference pressure, controlling the vacuum gauge to send a zeroing reference signal corresponding to the zeroing reference pressure to the calibration module, and controlling the calibration module to store the zeroing reference signal.

[0028] When the absolute value of the first deviation value is greater than the preset value during the production process of the semiconductor process equipment, the pumping device is controlled to pump the process chamber to the background vacuum degree again, the vacuum gauge is controlled to detect a fourth pressure of the process chamber, the vacuum gauge is controlled to send a measured signal corresponding to the fourth pressure to the calibration module and the controller respectively, the fourth pressure is determined based on the measured signal, a second deviation value of the fourth pressure relative to the zeroing reference pressure is determined, and an adjustment signal is sent to the calibration module based on the second deviation value, and the calibration module is controlled to perform zero-point calibration based on the adjustment signal, the zeroing reference signal and the measured signal.

[0029] The above at least one technical solution adopted by the embodiments of the present application can achieve the following beneficial effects:

[0030] In the embodiment of the present application, after the semiconductor processing equipment performs the warm-up process, the exhaust device performs the exhaust treatment on the process chamber according to the preset parameters. The first pressure of the process chamber detected by the vacuum gauge at this time can be used as the compensation reference pressure. Thus, during the process of the semiconductor processing equipment performing the mass production process, the exhaust treatment is performed on the process chamber according to the preset parameters again after each mass production process ends, and the second pressure of the process chamber after the exhaust treatment is obtained. If the absolute value of the first deviation value between the second pressure and the compensation reference pressure is less than or equal to the preset value, it can be judged that the vacuum gauge has a drift error, and the drift error is not large, so the pressure detected by the vacuum gauge can be compensated without calibrating the vacuum gauge. Thus, the labor intensity of the operator can be reduced.

[0031] In addition, during the process of performing the next mass production process, the opening degree of the first valve can be regulated based on the first deviation value and the preset process pressure, so that the measured pressure of the process chamber detected by the vacuum gauge during the vacuum treatment of the process chamber by the exhaust device through the first valve is the sum of the preset process pressure and the first deviation value, so as to eliminate the influence of the first deviation value of the vacuum gauge, thereby making the actual pressure of the process chamber be the preset process pressure. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the embodiments or the related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0033] Figure 1 A schematic diagram of a semiconductor processing equipment provided by an embodiment of the present application;

[0034] Figure 2 A schematic diagram of the connection relationship of a vacuum gauge, a calibration module and a controller provided by an embodiment of the present application;

[0035] Figure 3 A schematic diagram of a zero calibration circuit provided by an embodiment of the present application;

[0036] Figure 4 A flowchart of a control method of a semiconductor processing equipment provided by an embodiment of the present application;

[0037] Figure 5 A flowchart of another control method of a semiconductor processing equipment provided by an embodiment of the present application.

[0038] MARKED WITH REFERENCE NUMBERS:

[0039] 100-semiconductor process equipment; 110-process chamber; 120-gas supply device; 130-pumping device; 140-first valve; 150-vacuum gauge; 151-test signal output terminal; 152-sensor enable terminal; 160-controller; 161-controller zeroing acquisition terminal; 162-controller signal input terminal; 163-controller driving terminal; 164-controller zeroing enable signal terminal; 165-adjustment signal output terminal; 170-calibration module; 171-calibration module signal input terminal; 172-calibration module zeroing enable signal terminal; 173-calibration module zeroing signal output terminal; 174-zeroing circuit; 180-second valve; 1741-voltage follower; 17411-first input terminal of voltage follower; 17412-output terminal of voltage follower; 17413-second input terminal of voltage follower; 1742-resistance adjustable device; 1743-filtering sub-circuit. DETAILED DESCRIPTION

[0040] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below with reference to the embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0041] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms “mounting”, “connection”, “connecting” should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral connection; can be direct connection, can also be indirect connection through an intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0042] In addition, although the terms used in the present application are selected from the commonly known and used terms, some terms mentioned in the specification of the present application can be selected by the applicant according to his or her judgment, and the detailed meanings of which are described in the relevant part of the description herein.

[0043] In addition, the present application is required to be understood not only by the actual terms used, but also by the meanings implied by each term.

[0044] The technical solutions provided by the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0045] The embodiments of the present application provide a semiconductor process equipment. Referring to Figures 1 to 3The semiconductor process equipment 100 provided in the embodiment of the present application includes: a process chamber 110, a gas supply device 120, a gas extraction device 130, a first valve 140, a vacuum gauge 150 and a controller 160.

[0046] The process chamber 110 is a chamber used to perform semiconductor processing. For example, the process chamber 110 may be a chamber for performing an etching process. The gas supply device 120 is used to supply process gases to the process chamber 110 to facilitate smooth semiconductor processing. For example, the semiconductor processing equipment 100 further includes a second valve 180. The gas supply device 120 is connected to the process chamber 110 via the second valve 180. The gas extraction device 130 is connected to the process chamber 110 via the first valve 140.

[0047] The exhaust device 130 is used to evacuate the process chamber 110. Specifically, after the semiconductor processing equipment 100 performs a warm-up process, the exhaust device 130 is used to evacuate the process chamber 110 according to preset parameters. It should be noted that performing a warm-up process refers to performing a semiconductor process in the process chamber 110 using waste wafers or run-off wafers according to a normal process recipe.

[0048] The vacuum gauge 150 is used to detect a first pressure of the current process chamber 110 , wherein the first pressure is a compensated reference pressure Y. Exemplarily, the vacuum gauge 150 is a vacuum gauge.

[0049] During the mass production process of the semiconductor process equipment 100 with the preset process pressure A, the exhaust device 130 is used to exhaust the process chamber 110 according to the preset parameters after each mass production process is completed, and the vacuum gauge 150 is used to detect the second pressure Z of the current process chamber 110. n .

[0050] The controller 160 is used to determine a first deviation value Z of the second pressure Zn relative to the compensation reference pressure Y. n -Y, the absolute value of the first deviation value | Z n -Y| is less than or equal to the preset value B, in the process of the next mass production process, based on the first deviation value Z n -Y and the preset process pressure A regulate the opening of the first valve 140. Exemplarily, the preset value B is greater than or equal to 0.05 times the preset process pressure A and less than or equal to 0.2 times the preset process pressure A, i.e., 0.05A≤B≤0.2A. For example, the preset value B is one-tenth of the preset process pressure A, i.e., B=0.1A.

[0051] It should be noted that the mass production process is a process flow distinguished from the warm-up process. The mass production process is a process implemented in normal production; for example, the mass production process refers to the implementation of semiconductor process treatment using normal wafers according to a normal process recipe. It should also be noted that the mass production process can be understood according to the following example. In the process of semiconductor process treatment of wafers, the wafers to be treated can be first placed in a semiconductor process equipment, and the semiconductor process equipment is used to implement the mass production process on the wafers to be treated; after a single mass production process is completed, the wafers treated by the semiconductor process are taken out. In the process of implementing the mass production process next time, the wafers to be treated are placed in the semiconductor process equipment for treatment. The semiconductor process equipment cyclically implements the mass production process to complete the batch processing of the wafers.

[0052] In this way, in the embodiment of the present application, after the semiconductor process equipment 100 performs the warm-up process, the evacuation device 130 performs the evacuation treatment on the process chamber 110 according to the preset parameters. The first pressure of the process chamber 110 detected by the vacuum gauge 150 at this time can be used as a compensation reference pressure. Thus, in the process of implementing the mass production process by the semiconductor process equipment 100, after each mass production process is completed, the evacuation treatment is performed on the process chamber 110 again according to the preset parameters, and the second pressure Z n of the process chamber 110 after the evacuation treatment is obtained. n If the absolute value of the first deviation value |Z n -Y| between the second pressure Z n and the compensation reference pressure is less than or equal to the preset value B, it can be judged that the drift error of the vacuum gauge 150 occurs, and the drift error is not large, so that the pressure detected by the vacuum gauge 150 can be compensated without the need to calibrate the vacuum gauge 150. Thus, the labor intensity of the operator can be reduced.

[0053] In addition, in the process of implementing the mass production process next time, the opening of the first valve 140 can be adjusted based on the first deviation value Z n -Y and the preset process pressure A, so that in the process of vacuumizing the process chamber 110 by the evacuation device 130 through the first valve 140, the measured pressure C n+1 of the process chamber 110 detected by the vacuum gauge 150 is the sum of the preset process pressure A and the first deviation value Z n -Y (A+Z n -Y), so as to eliminate the influence of the first deviation value of the vacuum gauge 150, so that the actual pressure of the process chamber 110 is the preset process pressure A.

[0054] It is to be noted that, exemplarily, the gas extraction device 130 is configured to perform the gas extraction process on the process chamber 110 according to the preset parameter, specifically including: the gas extraction device 130 is configured to perform the gas extraction process on the process chamber 110 for a second preset time duration when the first valve 140 is in the fully open state. For example, the second preset time duration is 30 seconds.

[0055] To facilitate the understanding of the scheme provided by the embodiments of the present application by those skilled in the art, the following will explain the scheme provided by the embodiments of the present application in combination with specific examples.

[0056] After the semiconductor process equipment 100 performs the warm-up process, the gas extraction device 130 performs the gas extraction process on the process chamber 110 according to the preset parameter (the preset parameter is that the first valve 140 is in the fully open state, and the gas extraction device 130 operates at the rated power for 30 seconds), and the compensation reference pressure Y detected by the vacuum gauge 150 is 1 millitorr (mTorr). It is to be noted that millitorr refers to a unit of pressure; millitorr represents the size of the space occupied by the number of gas molecules per unit volume. At standard temperature and pressure, 1 millitorr is equal to 1 / 1,000,000 inch of mercury column pressure.

[0057] For example, after the 50th mass production process is completed, the process chamber 110 is subjected to the gas extraction process according to the preset parameter (the preset parameter is that the first valve 140 is in the fully open state, and the gas extraction device 130 operates at the rated power for 30 seconds), and the second pressure Z 50 detected by the vacuum gauge 150 is 1.5 millitorr. It can be concluded that the absolute value of the first deviation value |Z 50 -Y| is 0.5 millitorr. If the preset value B is 0.8 millitorr, the absolute value of the first deviation value |Z 50 -Y| is less than the preset value B, the pressure detected by the vacuum gauge 150 can be compensated without the need to calibrate the vacuum gauge 150.

[0058] Further, during the 51st mass production process, the opening degree of the first valve 140 can be adjusted based on the first deviation value Z 50 -Y and the preset process pressure A to make the actual measured pressure C 51 of the process chamber 110 detected by the vacuum gauge 150 during the vacuum extraction process of the process chamber 110 by the gas extraction device 130 through the first valve 140 be the sum of the preset process pressure A and the first deviation value Z 50 -Y. 50 -Y).

[0059] For example, the preset process pressure A is 8 millitorr, and the second pressure C 51is 8.5 mTorr to eliminate the influence of the first deviation value of the vacuum gauge 150, so that the actual pressure of the process chamber 110 is the preset process pressure A, i.e. the actual pressure of the process chamber 110 is 8 mTorr. In this way, the pressure of the process chamber 110 can meet the process requirements without calibrating the vacuum gauge 150.

[0060] It should be noted that the above embodiments mainly provide the processing method when the absolute value |Z n In the case of -Y|≤B, the processing method is as follows: the controller 160 controls the pumping device 130 to pump the process chamber 110 to the preset process pressure A, and the vacuum gauge 150 detects the third pressure of the process chamber 110. The third pressure is the preset process pressure A. The vacuum gauge 150 is used to send a measured signal corresponding to the third pressure A to the calibration module 170 and the controller 160, respectively. n In the case of -Y|>B, the vacuum gauge 150 can be calibrated by manual calibration. Of course, the vacuum gauge 150 can be automatically calibrated to further reduce the labor intensity of the calibration personnel. The specific calibration method is as follows.

[0061] In some embodiments, the semiconductor process equipment 100 further comprises a calibration module 170. In the case of initial factory entry of the semiconductor process equipment 100, i.e. after the installation and debugging of the semiconductor process equipment 100 in the new machine state, the pumping device 130 pumps the process chamber 110 to the base vacuum degree. It should be noted that the base vacuum degree refers to the vacuum degree of the gas in a certain space (process chamber) during the implementation of the semiconductor process, and this vacuum degree can meet the required vacuum degree of the workpiece (different workpieces have different requirements for the base vacuum degree).

[0062] The vacuum gauge 150 is used to detect the third pressure of the current process chamber 110, wherein the third pressure is the zero reference pressure X. In other words, after the process chamber 110 is treated by the base vacuum degree, the pressure of the process chamber 110 detected by the vacuum gauge 150 is called the zero reference pressure. The vacuum gauge 150 is also used to send a zero reference signal corresponding to the zero reference pressure X to the calibration module 170. The calibration module 170 is used to store the zero reference signal.

[0063] In the process of the semiconductor process equipment 100 performing the mass production process of the preset process pressure A, the controller 160 is also used to control the pumping device 130 to pump the process chamber 110 to the preset process pressure A when the absolute value |Z n In the case of -Y|>B, the pumping device 130 is controlled again to pump the process chamber 110 to the base vacuum degree. The vacuum gauge 150 is used to detect the fourth pressure Z of the current process chamber 110. The vacuum gauge 150 is also used to send a measured signal corresponding to the fourth pressure Z to the calibration module 170 and the controller 160, respectively.

[0064] The controller 160 is further configured to determine a fourth pressure Z based on the measured signal, determine a second deviation value of the fourth pressure Z relative to the zeroing reference pressure X, and send an adjustment signal to the calibration module 170 based on the second deviation value. The calibration module 170 is configured to perform zero-point calibration based on the adjustment signal, the zeroing reference signal, and the measured signal. It should be noted that the drift error of the detection device is generally referred to as zero-point drift by those skilled in the art, and thus, correcting the drift error of the detection device can be referred to as zero-point calibration. Corresponding to the embodiments provided in the present application, the process of calibrating the vacuum gauge 150 by using the calibration module 170 can be referred to as zero-point calibration by using the calibration module 170.

[0065] It should be noted that whether to perform zero-point calibration can be selected by an operator. For example, the information "whether to perform zero-point calibration of the vacuum gauge" can be displayed on the human-computer interaction device when the drift error of the vacuum gauge exceeds the threshold value. After the operator selects "yes", the zero-point calibration of the vacuum gauge is automatically performed. If the operator selects "no", the operator can perform the zero-point calibration of the vacuum gauge by manual calibration.

[0066] In order to facilitate those skilled in the art to understand the scheme provided in the above embodiments, the scheme provided in the above embodiments will be explained in combination with specific examples as follows.

[0067] In the case of initial factory entry of the semiconductor process equipment 100, that is, in the case of the semiconductor process equipment 100 in the new machine state, after installation and debugging are completed, the pumping device 130 is used to pump the process chamber 110 to a base vacuum degree. Exemplarily, the pumping device 130 is used to pump the process chamber 110 to the base vacuum degree, specifically including: the pumping device 130 is used to continuously pump the process chamber 110 for a first preset time duration when the first valve 140 is in a fully open state. For example, the first preset time duration is 5 hours.

[0068] It should be noted that in some embodiments, the pumping device 130 is composed of two-stage pumps. The pumping device 130 can specifically include a molecular pump and a dry pump. The pumping capacity of the pumping device 130 is determined by the type of the pump included therein and the effective pump speed Seff thereof. In the case of the light-emitting diode chip etching equipment, in the case of only a dry pump, the minimum pressure of the process chamber 110 can only reach about 100 mTorr in the rated speed operating state of the dry pump, and thus, a molecular pump needs to be added in front of the dry pump. For example, the rotating speed of the magnetic levitation molecular pump is usually above 20,000 rpm. In the cooperation of the magnetic levitation molecular pump and the dry pump, the process chamber 110 can be pumped to below 1 mTorr in the full speed operating state, close to the limit vacuum, so as to meet the pressure requirement of the light-emitting diode chip etching equipment.

[0069] When the gas supply device 120 of the semiconductor processing equipment 100 does not supply process gas to the process chamber 110, and the leak rate of the process chamber 110 is normal, the first valve 140 is set to be fully open, the molecular pump and the dry pump are operated at the rated power, and the process chamber 110 is pumped to the limit vacuum state for several hours (more than 4 hours), which is generally referred to as the chamber background vacuum state. In general, the standard background vacuum degree of the LED chip etching equipment is 0.02 to 0.07 mTorr.

[0070] After the process chamber 110 is pumped to the background vacuum degree, the vacuum gauge 150 is used to detect the third pressure of the process chamber 110, which is referred to as the zero reference pressure X. For example, the zero reference pressure X is 0.05 mTorr. The vacuum gauge 150 sends the detection data to the calibration module 170 in the form of an electrical signal. For example, the voltage of the electrical signal (zero reference signal) output by the vacuum gauge 150 is 5 mV. That is, when the voltage of the electrical signal output by the vacuum gauge 150 is 5 mV, it can be determined that the pressure detected by the vacuum gauge 150 is 0.05 mTorr. The calibration module 170 stores the zero reference signal.

[0071] The controller 160 controls the semiconductor processing equipment 100 to perform a warm-up process. After the semiconductor processing equipment 100 performs the warm-up process, the pumping device 130 pumps the process chamber 110 according to the preset parameter (the preset parameter is that the first valve 140 is fully open, and the pumping device 130 is operated at the rated power for 30 seconds), and the compensation reference pressure Y detected by the vacuum gauge 150 is 1 mTorr.

[0072] The controller 160 controls the semiconductor processing equipment 100 to perform a mass production process. During the process of the semiconductor processing equipment 100 performing the mass production process with the preset process pressure A of 8 mTorr, for example, after the process chamber 110 is pumped according to the preset parameter (the preset parameter is that the first valve 140 is fully open, and the pumping device 130 is operated at the rated power for 30 seconds) after the 60th mass production process is completed, the second pressure Z detected by the vacuum gauge 150 is 2 mTorr. 60 The absolute value |Z 60 -Y| is 1 mTorr. If the preset value B is 0.8 mTorr, the absolute value |Z 60 -Y| is greater than the preset value B, it can be determined that the absolute value |Z 60 -Y| is larger, it is not recommended to compensate the pressure detected by the vacuum gauge 150; thereby the vacuum gauge 150 can be calibrated.

[0073] Further, the controller 160 controls the semiconductor processing equipment 100 to perform a mass production process. During the process of the semiconductor processing equipment 100 performing the mass production process with the preset process pressure A of 8 mTorr, for example, after the process chamber 110 is pumped according to the preset parameter (the preset parameter is that the first valve 140 is fully open, and the pumping device 130 is operated at the rated power for 30 seconds) after the 60th mass production process is completed, the second pressure Z detected by the vacuum gauge 150 is 2 mTorr. n-Y| is greater than the preset value B, the control of the gas extraction device 130 to the process chamber 110 is extracted from the background vacuum. Wherein, the gas extraction device 130 is in the first valve 140 is in the full open state, with the rated power operation 5 hours. The vacuum gauge 150 detects the current process chamber 110 of the fourth pressure Z. The vacuum gauge 150 is also used to send the measured signal corresponding to the fourth pressure Z to the calibration module 170 and the controller 160 respectively. For example, the measured signal is the voltage of 105 millivolts of electrical signal.

[0074] The controller 160 determines that the fourth pressure Z is 1.05 millitorr based on the measured signal, and determines that the second deviation value Z-X of the fourth pressure Z relative to the zero reference pressure X is 1 millitorr. Further, the controller 160 sends an adjustment signal to the calibration module 170 based on the second deviation value Z-X of 1 millitorr.

[0075] The calibration module 170 is used to carry out zero point calibration based on the adjustment signal, the zero reference signal (the voltage of 5 millivolts of electrical signal) and the measured signal (the voltage of 105 millivolts of electrical signal). For example, the adjustment signal is the voltage of-100 millivolts of electrical signal, so that the calibration module 170 outputs the voltage of 5 millivolts of electrical signal. The controller 160 can determine that the actual pressure of the process chamber is 5 millitorr based on the voltage of 5 millivolts of electrical signal output by the calibration module 170. In the subsequent process, the calibration module 170 carries out zero point calibration on the measured signal output by the vacuum gauge 150 in real time, so that the calibration module 170 sends the electrical signal corresponding to the actual pressure of the process chamber to the controller 160, so as to eliminate the drift error of the vacuum gauge 150.

[0076] Further, in the process of implementing the 61st mass production process, if the measured signal output by the vacuum gauge 150 is the voltage of 900 millivolts of electrical signal, the calibration module 170 sends the electrical signal of 800 millivolts to the controller 160. The controller 160 can determine that the pressure of the process chamber 110 is 8 millitorr.

[0077] After the 65th mass production process is completed, the process chamber 110 is subjected to the gas extraction treatment according to the preset parameters (the preset parameters are that the first valve 140 is in the full open state, and the gas extraction device 130 is operated at the rated power for 30 seconds), and the measured signal output by the vacuum gauge 150 is the voltage of 250 millivolts of electrical signal. The calibration module 170 sends the electrical signal of 150 millivolts to the controller 160. The controller 160 can determine that the second pressure Z 65 of the process chamber 110 is 1.5 millitorr. It can be concluded that the absolute value |Z 65 -Y| is 0.5 millitorr. If the preset value B is 0.8 millitorr, the absolute value |Z 65 -Y| is less than the preset value B, the pressure detected by the vacuum gauge 150 can be compensated without calibration of the vacuum gauge 150.

[0078] Further, during the 66th mass production process, the first deviation value Z 65 -Y and the preset process pressure A to control the opening of the first valve 140, so that during the vacuumizing process of the process chamber 110 by the exhaust device 130 through the first valve 140, the measured pressure C 66 of the process chamber 110 detected by the vacuum gauge 150 is 65 -Y) of the sum (A+Z 65 -Y).

[0079] For example, the preset process pressure A is 8 mTorr, and the second pressure C 66 of 8.5 mTorr detected by the vacuum gauge 150 after the vacuumizing process by the exhaust device 130 is required to eliminate the influence of the first deviation value of the vacuum gauge 150, so that the actual pressure of the process chamber 110 is the preset process pressure A, i.e. the actual pressure of the process chamber 110 is 8 mTorr.

[0080] It should be noted that in some embodiments, the second preset time length is less than the first preset time length. That is, the time length of the vacuum gauge 150 compensation process is less than the time length of the vacuum gauge 150 calibration process. In this way, in the case that the error of the vacuum gauge 150 is not large, the vacuum gauge 150 compensation process with shorter time consumption can be performed, and it is not necessary to perform the vacuum gauge 150 calibration process with longer time consumption every time, so that the time consumed for debugging the vacuum gauge 150 can be saved, and the working efficiency of the semiconductor process equipment 100 can be improved.

[0081] Reference Figure 2 In some embodiments, the vacuum gauge 150 includes a test signal output end 151 and a sensor enable end 152. The calibration module 170 includes a calibration module signal input end 171, a calibration module zero adjustment enable signal end 172, and a calibration module zero adjustment signal output end 173. The controller 160 includes a controller zero adjustment collection end 161, a controller signal input end 162, a controller driving end 163, and a controller zero adjustment enable signal end 164.

[0082] The test signal output end 151 is connected with the calibration module signal input end 171, and the test signal generated by the vacuum gauge 150 during detection is transmitted to the calibration module signal input end 171 through the test signal output end 151. The calibration module zero adjustment signal output end 173 is connected with the controller zero adjustment collection end 161, and after the calibration of the test signal sent by the vacuum gauge 150 by the calibration module 170, the test signal is transmitted to the controller zero adjustment collection end 161 through the calibration module zero adjustment signal output end 173.

[0083] The test signal output end 151 is also connected with the controller signal input end 162. The test signal generated by the vacuum gauge 150 during the detection process is also transmitted to the controller signal input end 162 through the test signal output end 151. The controller driving end 163 is connected with the sensor enabling end 152, so that the controller 160 supplies power to the vacuum gauge 150 through the controller driving end 163.

[0084] The controller zeroing enabling signal end 164 is connected with the calibration module zeroing enabling signal end 172. For example, in the case that the controller zeroing enabling signal end 164 sends a high-level signal (digital signal 1), the calibration module 170 calibrates the signal received by the calibration module signal input end 171. In the case that the controller zeroing enabling signal end 164 sends a low-level signal (digital signal 0), the calibration module 170 does not calibrate the signal received by the calibration module signal input end 171. That is, the calibration module 170 directly sends the signal received by the calibration module signal input end 171 to the controller zeroing collection end 161 through the calibration module zeroing signal output end 173.

[0085] In this way, in the embodiment of the present application, during the implementation of the mass production process, in the case that the absolute value of the first deviation value is small, the test signal generated by the vacuum gauge 150 during the detection process is transmitted in parallel (i.e., without processing the test signal) to the controller 160 through the calibration module 170, so that the controller 160 performs a short-time-consuming vacuum gauge 150 compensation process to compensate the detection data of the vacuum gauge 150, so that the controller 160 controls the opening degree of the first valve 140 based on the compensated data, so that the actual pressure of the process chamber 110 is the preset process pressure after the process chamber 110 is vacuumized by the pumping device 130 through the first valve 140.

[0086] In the case that the absolute value of the first deviation value is large, the test signal generated by the vacuum gauge 150 during the detection process is transmitted to the controller 160 after being zero-point calibrated by the calibration module 170, so that a long-time-consuming vacuum gauge 150 calibration process is performed to calibrate the detection data of the vacuum gauge 150 by using the calibration module 170. The calibration module 170 transmits the calibrated data to the controller 160. Further, during the implementation of the subsequent mass production process, in the case that the absolute value of the first deviation value is small, the detection data of the vacuum gauge 150 is compensated again, so that the actual pressure of the process chamber 110 is the preset process pressure based on the detection data of the vacuum gauge 150 after the process chamber 110 is vacuumized by the pumping device 130 through the first valve 140.

[0087] Reference Figure 3In some embodiments, the calibration module 170 is provided with a zero calibration circuit 174. The zero calibration circuit 174 includes a voltage follower 1741 and a resistance adjustable device 1742. The vacuum gauge 150 is electrically connected to a first input terminal 17411 of the voltage follower 1741, and an output terminal 17412 of the voltage follower 1741 is electrically connected to a second input terminal 17413 of the voltage follower 1741. The output terminal 17412 of the voltage follower 1741 is also electrically connected to the controller 160.

[0088] The resistance adjustable device 1742 is electrically connected to two bias pins of the voltage follower 1741. An adjustment signal output terminal 165 of the controller 160 is electrically connected to an adjustment terminal of the resistance adjustable device 1742. The adjustment signal output terminal 165 of the controller 160 is configured to output an adjustment signal to the resistance adjustable device 1742 to adjust the resistance of the resistance adjustable device 1742.

[0089] The calibration module 170 is specifically configured to receive the measured signal from the vacuum gauge 150, receive the adjustment signal from the adjustment signal output terminal 165, obtain the zero calibration reference signal stored in the calibration module 170, adjust the resistance of the resistance adjustable device 1742, so that the output signal output from the output terminal 17412 of the voltage follower 1741 is equal to the zero calibration reference signal, and complete the zero point calibration.

[0090] In some embodiments, during the process of executing the mass production process of the preset process pressure A by the semiconductor process equipment 100, and when the absolute value |Z n -Y| of the first deviation value is less than or equal to a preset value B, the resistance of the resistance adjustable device is maintained unchanged. Thus, the test signal generated by the vacuum gauge 150 during the detection process is transmitted in parallel (i.e., without processing the test signal) to the controller 160 by the calibration module 170.

[0091] Further, the zero calibration circuit 174 also includes a filtering sub-circuit 1743 for filtering the signal output by the vacuum gauge 150. The filtering sub-circuit 1743 can perform low-pass filtering on high-frequency signals in the environment to prevent interference of accidentally leaked high-frequency radio frequency signals and their harmonics on the reference input signal.

[0092] For example, the filtering sub-circuit 1743 is based on a second-order SK (Sallen-key) filter structure, uses an amplifier with unit voltage gain, and realizes a second-order low-pass filter with high Q value (quality factor) without using inductance, adjustable passband gain, and low-pass cutoff frequency. The selection of the resistance-capacitance device can be performed according to the actual working condition (radio frequency of 13.56 Mhz or 400 Khz) of the device to meet the high-frequency cutoff requirement. It should be noted that Sallen-key is an active filter topology structure proposed by R.P. Sallen and E.L. Key of the Massachusetts Institute of Technology Lincoln Laboratory in 1955, and is named as a Sallen-key filter, which is abbreviated as an SK filter.

[0093] The low-pass cutoff frequency f will affect the selection of the operational amplifier of the filtering sub-circuit 1743. Generally, in the case of a closed-loop gain of 1, the gain bandwidth product (GBWP) of the operational amplifier must be 100 times higher than the cutoff frequency. At the same time, attention should be paid to the slew rate and input bias current when selecting the operational amplifier. The reference signal passing through the filtering sub-circuit 1743 enters the standard voltage follower sub-circuit composed of the voltage follower 1741, and the resistance-adjustable device 1742 can be realized by using a digital potentiometer or a programmable logic chip driver.

[0094] The adjust signal (or adjustment signal) output by the controller 160 is sent to the resistance-adjustable device 1742 through the output end, and then the collected signal is compared with the adjust signal, and the resistance of the resistance-adjustable device 1742 is gradually adjusted. The voltages of the two bias pins of the voltage follower 1741 are changed. For example, the voltage follower 1741 can use typical operational amplifier chips such as OPA627, OPA637, and TL081.

[0095] In some embodiments, the first valve 140 can be a swing valve. In the related art, some swing valves include a control chip, the control chip of the swing valve can read the pressure signal fed back by the calibration module 170, and compare it with the preset process pressure A set by the controller 160, to adjust the opening degree of the swing valve, adjust the pressure of the process chamber 110, realize the matching of the measured value and the preset value, and complete the dynamic pressure control in the process of the process chamber 110. It should be noted that although the control chip is built-in in the swing valve, the control chip can be regarded as a sub-control unit included in the controller 160.

[0096] The embodiment of the present application provides a control method of a semiconductor process equipment, wherein the semiconductor process equipment 100 comprises a process chamber 110, a gas supply device 120, a gas exhaust device 130, a first valve 140 and a vacuum gauge 150. The gas supply device 120 is used for delivering a process gas to the process chamber 110, and the gas exhaust device 130 is connected with the process chamber 110 through the first valve 140.

[0097] Reference Figure 4 The control method of the semiconductor process equipment provided by the embodiment of the present application comprises:

[0098] In step 210, a warm-up process is performed on the semiconductor process equipment, and after the semiconductor process equipment performs the warm-up process, the gas exhaust device is controlled to perform the gas exhaust treatment on the process chamber according to the preset parameter, and the vacuum gauge is used for detecting a first pressure of the current process chamber, wherein the first pressure is a compensation reference pressure.

[0099] In the embodiment of the present application, the semiconductor process equipment 100 can be controlled to perform a warm-up process, and after the semiconductor process equipment 100 performs the warm-up process, the gas exhaust device 130 can be controlled to perform the gas exhaust treatment on the process chamber 110 according to the preset parameter, and the vacuum gauge 150 is used for detecting a first pressure of the current process chamber 110, wherein the first pressure is a compensation reference pressure Y.

[0100] In step 220, a production process of a preset process pressure is performed on the semiconductor process equipment, and during the process of performing the production process on the semiconductor process equipment, the gas exhaust device is controlled to perform the gas exhaust treatment on the process chamber according to the preset parameter after each production process ends, the vacuum gauge is controlled to detect a second pressure of the current process chamber, wherein the production process comprises multiple production processes; and a first deviation value of the second pressure relative to the compensation reference pressure is determined.

[0101] In the embodiment of the present application, the semiconductor process equipment 100 can be controlled to perform a production process of a preset process pressure A. During the process of performing the production process on the semiconductor process equipment 100, the gas exhaust device 130 can be controlled to perform the gas exhaust treatment on the process chamber 110 according to the preset parameter after each production process ends, and the vacuum gauge 150 is controlled to detect a second pressure Z of the current process chamber 110 n , wherein the production process comprises multiple production processes; and a first deviation value Z n of the second pressure Z n relative to the compensation reference pressure Y is determined.

[0102] In step 231, in the case that the absolute value of the first deviation value is less than or equal to a preset value, during the process of performing the next production process, the opening degree of the first valve is regulated based on the first deviation value and the preset process pressure.

[0103] In the embodiment of the present application, the absolute value of the first deviation value |Z n -Y| is less than or equal to the preset value B, in the process of the next mass production process, the first deviation value Z can be used to calculate the value of the first deviation value Z. n -Y and the preset process pressure A regulate the opening of the first valve 140 so that the actual pressure of the process chamber 110 is the preset process pressure A during the process of the vacuum device 130 vacuuming the process chamber 110 through the first valve 140.

[0104] In this way, in the embodiment of the present application, after the semiconductor process equipment 100 performs the warm-up process, the exhaust device 130 exhausts the process chamber 110 according to the preset parameters. The first pressure of the process chamber 110 detected by the vacuum gauge 150 at this time can be used as the compensation reference pressure. Therefore, during the process of the semiconductor process equipment 100 performing the mass production process, after each mass production process is completed, the process chamber 110 is exhausted again according to the preset parameters, and the second pressure Z of the process chamber 110 after the exhaust process is obtained. n If the second pressure Z n The absolute value of the first deviation from the compensated reference pressure |Z n -Y| is less than or equal to the preset value B, it can be determined that a drift error has occurred in the vacuum gauge 150, and the drift error is not large. The pressure detected by the vacuum gauge 150 can be compensated without calibrating the vacuum gauge 150.

[0105] Furthermore, during the next mass production process, the absolute value of the first deviation value |Z n -Y| and the preset process pressure A regulate the opening of the first valve 140 so that during the process of the vacuum device 130 vacuuming the process chamber 110 through the first valve 140, the measured pressure C of the process chamber 110 detected by the vacuum gauge 150 is n+1 The preset process pressure A and the first deviation value Z n -Y Sum(A+Z n -Y) to eliminate the influence of the first deviation value of the vacuum gauge 150, so that the actual pressure of the process chamber 110 is the preset process pressure A.

[0106] In some embodiments, the semiconductor processing equipment 100 further includes a calibration module 170. In the case where the semiconductor processing equipment 100 includes the calibration module 170, reference Figure 5 , the control method of the semiconductor process equipment further includes:

[0107] In step 205, in the case of initial factory entry of the semiconductor process equipment, the gas pumping device is controlled to pump the process chamber to a background vacuum level, the vacuum gauge is controlled to detect a third pressure of the process chamber, the third pressure is a zero reference pressure, the vacuum gauge is controlled to send a zero reference signal corresponding to the zero reference pressure to the calibration module, and the calibration module is controlled to store the zero reference signal.

[0108] In the embodiments of the present application, in the case of initial factory entry of the semiconductor process equipment 100, the gas pumping device 130 can be controlled to pump the process chamber 110 to a background vacuum level, the vacuum gauge 150 is controlled to detect a third pressure of the process chamber 110, the third pressure is a zero reference pressure X, the vacuum gauge 150 is controlled to send a zero reference signal corresponding to the zero reference pressure X to the calibration module 170, and the calibration module 170 is controlled to store the zero reference signal.

[0109] In step 235, in the case that the absolute value of the first deviation value is greater than the preset value, the gas pumping device is controlled to pump the process chamber to a background vacuum level again, the vacuum gauge is controlled to detect a fourth pressure of the process chamber, the vacuum gauge is controlled to send a measured signal corresponding to the fourth pressure to the calibration module and the controller respectively, the fourth pressure is determined based on the measured signal, a second deviation value of the fourth pressure relative to the zero reference pressure is determined, and an adjustment signal is sent to the calibration module based on the second deviation value; the calibration module is controlled to perform zero point calibration based on the adjustment signal, the zero reference signal and the measured signal.

[0110] In the embodiments of the present application, in the process of performing mass production process of the preset process pressure A by the semiconductor process equipment 100, in the case that the absolute value |Z n -Y| of the first deviation value is greater than the preset value B, the gas pumping device 130 can be controlled to pump the process chamber 110 to a background vacuum level again, the vacuum gauge 150 is controlled to detect a fourth pressure Z of the process chamber 110, the vacuum gauge 150 is controlled to send a measured signal corresponding to the fourth pressure Z to the calibration module 170 and the controller 160 respectively, the fourth pressure Z is determined based on the measured signal, a second deviation value of the fourth pressure Z relative to the zero reference pressure X is determined, and an adjustment signal is sent to the calibration module 170 based on the second deviation value; the calibration module 170 is controlled to perform zero point calibration based on the adjustment signal, the zero reference signal and the measured signal.

[0111] In this way, in the embodiments of the present application, during the implementation of the mass production process, when the absolute value of the first deviation value is small, the test signal generated by the vacuum gauge 150 during detection is transmitted in parallel (i.e., without processing the test signal) to the controller 160 by the calibration module 170, so that the controller 160 performs a short-time-consuming vacuum gauge 150 compensation process to compensate the detection data of the vacuum gauge 150, so that the controller 160 controls the opening degree of the first valve 140 based on the compensated data, so that after the process chamber 110 is vacuumized by the first valve 140 using the air exhaust device 130, the actual pressure of the process chamber 110 is the preset process pressure.

[0112] When the absolute value of the first deviation value is large, the test signal generated by the vacuum gauge 150 during detection is transmitted to the controller 160 after zero-point calibration by the calibration module 170, so that a long-time-consuming vacuum gauge 150 calibration process is performed to calibrate the detection data of the vacuum gauge 150 by the calibration module 170. The calibration module 170 transmits the calibrated data to the controller 160. Further, during the implementation of the subsequent mass production process, when the absolute value of the first deviation value is small, the detection data of the vacuum gauge 150 is compensated again to make the actual pressure of the process chamber 110 be the preset process pressure after the process chamber 110 is vacuumized by the first valve 140 using the air exhaust device 130 based on the detection data of the vacuum gauge 150.

[0113] In this way, when the error of the vacuum gauge 150 is not large, a short-time-consuming vacuum gauge 150 compensation process can be performed, and it is not necessary to perform a long-time-consuming vacuum gauge 150 calibration process every time, so that the time consumed for debugging the vacuum gauge 150 can be saved, and the working efficiency of the semiconductor process equipment 100 can be improved.

[0114] It should be noted that in this paper, relationship terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment.

[0115] Although the embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, replacements and variations of the embodiments of the present application can be made without departing from the principles and spirits of the embodiments of the present application, and the scope of the embodiments of the present application is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process apparatus, characterized by, The semiconductor processing equipment comprises a process chamber (110), a gas supply device (120), a gas exhaust device (130), a first valve (140), a vacuum gauge (150) and a controller (160); the gas supply device (120) is used for delivering a process gas to the process chamber (110), and the gas exhaust device (130) is connected with the process chamber (110) through the first valve (140); After the semiconductor processing equipment performs a warm-up process, the gas exhaust device (130) is used for performing a gas exhaust process on the process chamber (110) according to preset parameters, and the vacuum gauge (150) is used for detecting a first pressure of the process chamber (110) at present, wherein the first pressure is a compensation reference pressure; During the semiconductor processing equipment performs a mass production process with a preset process pressure, the gas exhaust device (130) is used for performing a gas exhaust process on the process chamber (110) according to the preset parameters after each mass production process ends, and the vacuum gauge (150) is used for detecting a second pressure of the process chamber (110) at present; the controller (160) is used for determining a first deviation value of the second pressure relative to the compensation reference pressure, and in the case that an absolute value of the first deviation value is less than or equal to a preset value, adjusting an opening degree of the first valve (140) based on the first deviation value and the preset process pressure during the next mass production process. The semiconductor processing equipment further comprises a calibration module (170); 2. The semiconductor process apparatus according to claim 1, wherein In the case that the semiconductor processing equipment is initially delivered, the gas exhaust device (130) is used for performing a background vacuum degree on the process chamber (110), and the vacuum gauge (150) is used for detecting a third pressure of the process chamber (110) at present, wherein the third pressure is a zeroing reference pressure, and the vacuum gauge (150) is further used for sending a zeroing reference signal corresponding to the zeroing reference pressure to the calibration module (170), and the calibration module (170) is used for storing the zeroing reference signal; During the semiconductor processing equipment performs a mass production process with a preset process pressure, the controller (160) is further used for, in the case that the absolute value of the first deviation value is greater than the preset value, controlling the gas exhaust device (130) to perform the background vacuum degree on the process chamber (110) again; the vacuum gauge (150) is used for detecting a fourth pressure of the process chamber (110) at present, and the vacuum gauge (150) is further used for sending a measured signal corresponding to the fourth pressure to the calibration module (170) and the controller (160) respectively; the controller (160) is further used for determining the fourth pressure based on the measured signal, determining a second deviation value of the fourth pressure relative to the zeroing reference pressure, and sending an adjustment signal to the calibration module (170) based on the second deviation value; and the calibration module (170) is used for performing zero-point calibration based on the adjustment signal, the zeroing reference signal and the measured signal. ​ 3. The semiconductor process apparatus according to claim 2, wherein The calibration module (170) is provided with a zero calibration circuit, the zero calibration circuit comprises a voltage follower and a resistance adjustable device; the vacuum gauge (150) is electrically connected with a first input end of the voltage follower, an output end of the voltage follower is electrically connected with a second input end of the voltage follower, and the output end of the voltage follower is also electrically connected with the controller (160); the resistance adjustable device is electrically connected with two bias pins of the voltage follower, and an adjustment signal output end of the controller (160) is electrically connected with an adjustment end of the resistance adjustable device; The calibration module (170) is specifically used for receiving the measured signal sent by the vacuum gauge (150), receiving the adjustment signal sent by the adjustment signal output end, obtaining the zero reference signal stored in the calibration module (170), adjusting the resistance of the resistance adjustable device, so that the output signal output by the output end of the voltage follower is equal to the zero reference signal, and zero point calibration is completed.

4. The semiconductor process apparatus according to claim 3, wherein In the process that the semiconductor process equipment performs the mass production process of the preset process pressure, and in the case that the absolute value of the first deviation value is less than or equal to the preset value, the resistance of the resistance adjustable device is maintained unchanged.

5. The semiconductor process apparatus according to claim 1, wherein The preset value is greater than or equal to 0.05 times of the preset process pressure and less than or equal to 0.2 times of the preset process pressure.

6. The semiconductor process apparatus according to claim 2, wherein The gas extraction device (130) is used for extracting a background vacuum degree of the process chamber (110), and specifically comprises: the gas extraction device (130) is used for continuously extracting the process chamber (110) for a first preset time duration in the case that the first valve (140) is in a fully open state.

7. The semiconductor process apparatus according to claim 6, wherein The gas extraction device (130) is used for extracting the process chamber (110) according to a preset parameter, and specifically comprises: the gas extraction device (130) is used for continuously extracting the process chamber (110) for a second preset time duration in the case that the first valve (140) is in a fully open state.

8. The semiconductor process apparatus according to claim 7, wherein The second preset time duration is less than the first preset time duration.

9. A control method of a semiconductor process equipment, characterized in that, The semiconductor process equipment comprises a process chamber (110), a gas supply device (120), a gas extraction device (130), a first valve (140) and a vacuum gauge (150), the gas supply device (120) is used for delivering process gas to the process chamber (110), and the gas extraction device (130) is connected with the process chamber (110) through the first valve (140); The control method comprises: controlling the semiconductor process equipment to perform a warm-up process, after the semiconductor process equipment performs the warm-up process, controlling the gas extraction device (130) to extract the process chamber (110) according to a preset parameter, and the vacuum gauge (150) is used for detecting a first pressure of the process chamber (110) at present, wherein the first pressure is a compensation reference pressure; The semiconductor process equipment is controlled to perform a mass production process with a preset process pressure. During the process in which the semiconductor process equipment performs the mass production process, the exhaust device (130) is controlled to perform an exhaust treatment on the process chamber (110) according to the preset parameters after each mass production process ends, and the vacuum gauge (150) is controlled to detect a second pressure of the process chamber (110) at present; a first deviation value of the second pressure relative to the compensation reference pressure is determined. In a case where an absolute value of the first deviation value is less than or equal to a preset value, during a process in which the next mass production process is performed, the opening degree of the first valve (140) is adjusted based on the first deviation value and the preset process pressure.

10. The method of controlling a semiconductor process apparatus according to Claim 9, wherein The semiconductor process equipment further comprises a calibration module (170). The control method further comprises: in a case where the semiconductor process equipment is initially delivered, the exhaust device (130) is controlled to perform an exhaust treatment on the process chamber (110) to a background vacuum degree, the vacuum gauge (150) is controlled to detect a third pressure of the process chamber (110) at present, the third pressure is a zeroing reference pressure, the vacuum gauge (150) is controlled to send a zeroing reference signal corresponding to the zeroing reference pressure to the calibration module (170), and the calibration module (170) is controlled to store the zeroing reference signal. In a case where the absolute value of the first deviation value is greater than the preset value during the process in which the semiconductor process equipment performs the mass production process, the exhaust device (130) is controlled to perform an exhaust treatment on the process chamber (110) to the background vacuum degree again, the vacuum gauge (150) is controlled to detect a fourth pressure of the process chamber (110) at present, the vacuum gauge (150) is controlled to send a measured signal corresponding to the fourth pressure to the calibration module (170) and the controller (160) respectively, the fourth pressure is determined based on the measured signal, a second deviation value of the fourth pressure relative to the zeroing reference pressure is determined, and an adjustment signal is sent to the calibration module (170) based on the second deviation value; the calibration module (170) is controlled to perform zero-point calibration based on the adjustment signal, the zeroing reference signal and the measured signal.

Images