Substrate processing apparatus

Abstract

A substrate processing apparatus includes: an indexing module including a loading port configured to receive a substrate carrier; and a processing module connected to the indexing module and including a transfer chamber, a processing chamber, and a buffer chamber. The process chamber is connected to the transfer chamber and the buffer chamber is disposed between the indexing module and the transfer chamber. The transfer chamber includes a transfer robot configured to transfer a substrate between the buffer chamber and the processing chamber. The buffer chamber includes a buffer frame, a spray nozzle, and at least one buffer side sensor, the buffer frame including a plurality of buffer slots, each of the plurality of buffer slots configured to store a respective substrate, and a spray nozzle provided on the buffer frame and configured to spray a state improving gas into a buffer tank among the plurality of buffer tanks, and at least one buffer side sensor provided on the buffer frame and configured to detect a state of a substrate located in the buffer tank.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus that processes a substrate using a fluid in a supercritical state. BACKGROUND

[0002] Semiconductor devices are manufactured through various processes including a photolithography process of forming a circuit pattern on a substrate such as a silicon wafer. During the manufacturing process of semiconductor devices, various foreign substances such as particles, organic contaminants, and metal impurities are generated. These foreign substances can cause defects in the substrate, which directly affect the performance and yield of semiconductor devices. Therefore, in the manufacturing process of semiconductor devices, a cleaning process is performed to remove these foreign substances.

[0003] The cleaning process can be performed through a chemical process for removing foreign substances on a substrate using a chemical, a rinsing process for cleaning the chemical using a rinsing agent such as pure water, and a drying process for drying the substrate. SUMMARY

[0004] Embodiments of the present inventive concept provide a substrate processing apparatus capable of processing a substrate while controlling a temperature or humidity of the substrate.

[0005] However, embodiments of the present inventive concept can provide other benefits not limited to the above-described tasks, and can be extended in various ways within the scope of the technical idea included in the present disclosure.

[0006] A substrate processing apparatus according to an embodiment includes an index module including a load port configured to receive a substrate carrier, and a processing module connected to the index module and including a transfer chamber, a processing chamber, and a buffer chamber. The processing chamber is connected to the transfer chamber and the buffer chamber is disposed between the index module and the transfer chamber. The transfer chamber includes a transfer robot configured to transfer a substrate between the buffer chamber and the processing chamber. The buffer chamber includes a buffer frame including a plurality of buffer slots each configured to store a respective substrate, a spray nozzle disposed on the buffer frame and configured to spray a state improving gas into a buffer slot of the plurality of buffer slots, and at least one buffer side sensor disposed on the buffer frame and configured to detect a state of a substrate located in the buffer slot.

[0007] A substrate processing apparatus according to another embodiment includes a indexing module including a load port configured to receive a substrate carrier, a processing module connected to the indexing module, and a controller. The processing module includes a transfer chamber, a liquid treatment chamber, a dry chamber, and a buffer chamber. The liquid treatment chamber and the dry chamber are connected to the transfer chamber and the buffer chamber is disposed between the indexing module and the transfer chamber. The transfer chamber includes a transfer robot configured to transfer a substrate between the buffer chamber and the liquid treatment chamber and between the buffer chamber and the dry chamber. The liquid treatment chamber is configured to treat the substrate using a chemical. The dry chamber is configured to dry the substrate using a fluid in a supercritical state. The buffer chamber includes a buffer frame including a plurality of buffer slots each configured to store a respective substrate, a spray nozzle disposed on the buffer frame and configured to spray a state improving gas into a buffer slot of the plurality of buffer slots, and at least one buffer side sensor disposed on the buffer frame and configured to detect a state of the substrate located in the buffer slot. The controller is configured to cause the spray nozzle to spray the state improving gas in response to a temperature of the respective substrate or a humidity of the respective substrate detected by the at least one buffer side sensor exceeding a predetermined value.

[0008] A substrate processing apparatus according to another embodiment includes a indexing module including a load port configured to receive a substrate carrier; a transfer chamber including a transfer robot configured to transfer a substrate to and from the load port; a liquid treatment chamber connected to the transfer chamber and configured to treat the substrate using a chemical; a drying chamber connected to the transfer chamber and configured to dry the substrate using a fluid in a supercritical state; a buffer chamber disposed between the indexing module and the transfer chamber; and a controller, wherein the buffer chamber includes a buffer frame including a plurality of buffer slots each configured to store a respective substrate, a spray nozzle disposed on the buffer frame and configured to spray a state improving gas into a buffer slot of the plurality of buffer slots, and at least one buffer side sensor disposed on the buffer frame and configured to detect a state of a substrate located in the buffer slot, the transfer robot includes an infeed arm configured to transfer the substrate from the buffer chamber to the liquid treatment chamber, the transfer chamber further includes at least one robot side sensor disposed on the transfer robot and configured to detect a state of a substrate loaded in the infeed arm, and the liquid treatment chamber includes a liquid treatment housing, a support plate disposed inside the liquid treatment housing and configured to support the substrate inside the liquid treatment housing, a fluid supply configured to supply a fluid used for processing the substrate in the liquid treatment housing, and at least one chamber side sensor configured to detect a state of the substrate located inside the liquid treatment housing.

[0009] According to embodiments, a substrate processing apparatus that manages temperature and / or humidity of a substrate in order to improve processing of the substrate can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a top view of a substrate processing apparatus according to an embodiment.

[0011] Figure 2 is Figure 1 is a view of an inside of a buffer chamber of

[0012] Figure 3 is Figure 2 is an enlarged view of a partial area of a buffer frame of the buffer chamber in

[0013] Figure 4 is a top view of a buffer slot.

[0014] Figure 5is a view showing an arm of a transfer robot provided in a transfer chamber of Figure 1

[0015] Figure 6 is a view showing a carry-in arm of a transfer robot.

[0016] Figure 7 is a sectional view of a liquid treatment chamber of Figure 1

[0017] Figure 8 is a view showing a drying chamber of Figure 1

[0018] Figure 9 is a block diagram showing a control relationship of a substrate processing apparatus.

[0019] Figure 10 is a view showing a state in which a state improving gas is injected into a buffer tank.

[0020] Figure 11 is a view showing that a state improving gas is injected when a substrate is loaded into a buffer tank.

[0021] Figure 12 is a view showing that a state improving gas is injected when a substrate is unloaded from a buffer tank.

[0022] Figure 13 is an enlarged view of a partial area of a buffer frame included in a buffer chamber according to another embodiment, viewed along a first direction.

[0023] Figure 14 is a plan view of a buffer tank in a buffer frame of Figure 13

[0024] Figure 15 is a sectional view of a liquid treatment chamber according to another embodiment.

[0025] Figure 16 is a sectional view of a liquid treatment chamber according to another embodiment. DETAILED DESCRIPTION

[0026] The present disclosure will be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. As will be appreciated by one skilled in the art, the present inventive concept can be embodied in many different forms and should not be construed as limited to the examples set forth herein. Accordingly, the present inventive concept should not be construed as being limited to the examples set forth herein.

[0027] ​​​​The drawings and description are to be regarded as illustrative in nature, and not restrictive. Like reference numerals designate like elements in the drawings and description throughout the specification. An item described in the singular can be provided in the plural, as can be seen, for example, in the drawings. Thus, unless the context indicates otherwise, a description of a single item should be understood to apply to the plural of the item.

[0028] Numerals such as "first," "second," "third," etc. can simply be used as labels to certain elements, steps, etc. to distinguish such elements, steps, etc. from one another. Terms described in the specification without "first," "second," etc. can still be referred to as "first" or "second" in the claims. In addition, terms referenced with a particular ordinal number (e.g., "first") in a particular claim can be described elsewhere in the specification or another claim with a different ordinal number (e.g., "second").

[0029] Further, in the drawings, the size and thickness of each element are randomly represented for a better understanding and ease of description, and the present disclosure is not limited thereto. In the drawings, the thickness of layers, films, panels, regions, etc. is exaggerated for clarity. In the drawings, the thickness of some layers and regions is exaggerated for a better understanding and ease of description.

[0030] It is understood that when an element such as a layer, film, region, or substrate is referred to as being "connected to" another element, "coupled to" another element, or "on" another element, it can be directly connected, coupled, or on the other element, or intervening elements can also be present. In contrast, when an element is referred to as being "directly connected to" another element, or "directly coupled to" another element, or "directly on" another element, there are no intervening elements (e.g., an element does not contact another element). Further, in the specification, the word "on" or "over" means positioned on or below the object portion, not necessarily in the direction of gravitational force.

[0031] In addition, the word "comprising" and variations such as "comprises" or "comprising" will be understood to imply the inclusion of a stated element or group of elements but not the exclusion of any other element or group of elements. When a component is described as "comprising" a particular element or group of elements, it should be understood that the component can only be formed of that element or group of elements, or that the element or group of elements can be combined with additional elements to form the component, unless the context indicates otherwise. On the other hand, the term "consisting of means that the component is formed of only the listed elements.

[0032] Further, throughout the specification, the phrase "in plan" means viewing the object portion from the top, and the phrase "in cross-section" means viewing a cross-section formed by cutting the object portion vertically from the side.

[0033] The term "substrate" may refer to a base substrate (e.g., an initial semiconductor substrate that forms a base of a wafer in a final wafer product, such as a bulk semiconductor substrate (e.g., formed of crystalline silicon), a silicon-on-insulator (SOI) substrate, etc.), or a stacked structure including a base substrate and layers formed on the substrate.

[0034] Figure 1 is a top view of a substrate processing apparatus 1 according to an embodiment.

[0035] refer to Figure 1 , a substrate processing apparatus 1 according to an embodiment may include an index module 2 and a processing module 3 .

[0036] The indexing module 2 facilitates the substrate ( Figure 7 The indexing module 2 may be an equipment front end module (EFEM). The indexing module 2 may include a loading port 20 and an indexing chamber 22. The loading port 20, the indexing chamber 22, and the processing modules 3 may be arranged sequentially in a row. The direction in which the loading port 20, the indexing chamber 22, and the processing modules 3 are arranged is referred to as a first direction X. When viewed from above, a direction orthogonal to the first direction X is referred to as a second direction Y (for example, the first direction X and the second direction Y may define a horizontal plane), and a direction orthogonal to the first direction X and the second direction Y (for example, a vertical direction) is referred to as a third direction Z. Alternatively, the third direction Z may also be referred to as a height direction.

[0037] The indexing module 2 may be provided with at least one loading port 20. For example, Figure 1Embodiments include four load ports 20. The load ports 20 are provided at a first side of the indexing chamber 22. In embodiments having multiple load ports 20, the multiple load ports 20 can be arranged in a row along the second direction Y. The number and arrangement of the load ports 20 are not limited to the above example, and can be changed depending on the footprint of the substrate processing apparatus 1, the processing efficiency of the substrate processing apparatus 1, the arrangement with other devices, and the like. A substrate carrier C (e.g., the substrate carrier C can temporarily store at least one substrate) that accommodates at least one substrate can be located in the load port 20. The substrate carrier C can be carried from a location outside the substrate processing apparatus 1 and loaded into the load port 20. Additionally, the substrate carrier C can be unloaded from the load port 20 to be returned to the outside location. The substrate carrier C can be loaded with at least one substrate before being loaded in the load port 20. For example, the substrate carrier C can be loaded with at least one substrate at the outside location, and the substrate carrier C can be carried from the outside location by a transfer machine such as an overhead hoist transport (OHT). Additionally, the carrying of the substrate carrier C can be performed by an automated guided vehicle, a rail guided vehicle, or the like, or can be performed manually by a worker. The substrate carrier C accommodates at least one substrate, and can be a front opening unified pod (FOUP) or the like.

[0038] The indexing chamber 22 is provided between the load ports 20 and the processing modules 3. The substrate can be transferred in the transfer chamber 40 between the load ports 20 and the processing modules 3. The indexing chamber 22 can include an indexing robot 220 and an indexing track 221. The indexing track 221 can extend in a direction transverse to the first direction X, such as the second direction Y.

[0039] The indexing robot 220 can pick up a substrate and carry the substrate within the indexing chamber 22. The indexing track 221 provides a path along which the indexing robot 220 moves. The indexing track 221 can support the indexing robot 220. The indexing track 221 can face the second direction Y such that its length direction corresponds to the arrangement direction of the multiple load ports 20. The indexing robot 220 can be mounted on the indexing track 221 and can move along the indexing track 221 (e.g., the indexing robot can move parallel to the second direction Y). Thus, the indexing robot 220 can move along the second direction Y on the indexing track 221 to a position adjacent to a particular load port 20, extract or remove a substrate from a substrate carrier C located at the particular load port 20, move to a position adjacent to a processing module 3, and load the substrate into the processing module 3, or the indexing robot 220 can move along the second direction Y on the indexing track 221 to a position adjacent to a processing module, extract or remove a substrate from the processing module 3, move to a position adjacent to a particular load port 20, and store the substrate in a substrate carrier C located at the particular load port 20.

[0040] In some embodiments, the index track 221 can be omitted. For example, the index robot 220 can travel independently of the index track, or the index robot 220 can reach each load port 20 without traveling, and / or can be provided in a central portion of the index chamber 22.

[0041] The processing module 3 performs a manufacturing process on a substrate loaded in the processing module 3, which can be referred to as an incoming substrate. In the following description, the term incoming can refer to the substrate being loaded into the module and the term incoming can refer to loading the substrate in the module. Additionally, the term outgoing can refer to the substrate being removed from the module and the term outgoing can refer to unloading the substrate from the module. The manufacturing process performed by the processing module 3 can be a cleaning process. The processing module 3 can include a buffer chamber 30, a transfer chamber 40, and processing chambers such as a liquid handling chamber 50 and a drying chamber 60.

[0042] The buffer chamber 30 and the transfer chamber 40 can be disposed along a first direction X. The transfer chamber 40 can be arranged such that its length direction extends in the first direction X. The processing chambers use a manufacturing process such as a liquid handling or drying process to process a substrate. The processing chambers are arranged to be connected to the transfer chamber 40 (e.g., an enclosed path can connect the processing chambers and the transfer chamber 40). The processing chambers can include a liquid handling chamber 50 and a drying chamber 60. The liquid handling chamber 50 can be connected to the transfer chamber 40. The drying chamber 60 can be connected to the transfer chamber 40. The liquid handling chamber 50 and the drying chamber 60 can be disposed on opposite sides of the transfer chamber 40 along a second direction Y. As an example, the liquid handling chamber 50 can be disposed on a first side of the transfer chamber 40 along the second direction Y, and the drying chamber 60 can be disposed on a second side of the transfer chamber 40 opposite the first side in the second direction (i.e., on the opposite side in the direction toward which the liquid handling chamber 50 is disposed).

[0043] The liquid handling chamber 50 can be one of a plurality of liquid handling chambers 50. When there is a plurality of liquid handling chambers 50, the plurality of liquid handling chambers 50 can be arranged along the first direction X parallel to the length direction of the transfer chamber 40. Additionally, the plurality of liquid handling chambers 50 can be arranged to be stacked along a third direction (e.g., on top of another liquid handling chamber). Additionally, the plurality of liquid handling chambers 50 can be arranged by a combination of the arrangement along the first direction X and the arrangement along the third direction Z.

[0044] The drying chamber 60 can be one of a plurality of drying chambers 60. If there is a plurality of drying chambers 60, the plurality of drying chambers 60 can be arranged along the first direction X parallel to the length direction of the transfer chamber 40. Additionally, the plurality of drying chambers 60 can be arranged to be stacked along a third direction (e.g., on top of another drying chamber). Additionally, the plurality of drying chambers 60 can be arranged by a combination of the arrangement along the first direction X and the arrangement along the third direction Z.

[0045] The drying chamber 60 can perform a drying process on a substrate disposed therein. The liquid treatment process performed in the liquid treatment chamber 50 and the drying process performed in the drying chamber 60 can be sequentially performed (e.g., one after another). In addition, any one of the liquid treatment process performed in the liquid treatment chamber 50 or the drying process performed in the drying chamber 60 can be selectively performed in some cases.

[0046] The arrangement of the buffer chamber 30, the transfer chamber 40, the liquid treatment chamber 50, and the drying chamber 60 is not limited to the above-described example and can be modified in other embodiments. For example, the arrangement can be modified to supplement process efficiency. In some embodiments, the liquid treatment chamber 50 and the drying chamber 60 can be disposed on the same side of the transfer chamber 40 along the first direction or arranged to be stacked on each other.

[0047] The buffer chamber 30 is disposed between the indexing module 2 and the transfer chamber 40. The buffer chamber 30 is disposed between the indexing chamber 22 and the transfer chamber 40. The buffer chamber 30 temporarily stores a substrate when the substrate is transferred between the indexing module 2 and the processing module 3. Accordingly, the buffer chamber 30 can reduce a backlog phenomenon that can occur during a process of returning the substrate to the indexing module and can improve a process of returning the substrate.

[0048] Figure 2 is a view of an inside of the buffer chamber in Figure 1 Figure 3 is a view of a partial area of a buffer frame in Figure 2 Figure 4 is a top view of a buffer slot.

[0049] Referring to Figures 2 to 4 , the buffer chamber 30 can include a buffer frame 300, a spray nozzle 310, and a buffer side sensor 320.

[0050] The buffer frame 300 has a width in the second direction Y and a height in the third direction Z. The buffer frame 300 includes a buffer slot 301 in which a substrate can be accommodated. The buffer slot 301 extends in a direction from the indexing chamber 22 to the transfer chamber 40 (i.e., the first direction X), which can be orthogonal to faces of the indexing chamber 22 and the transfer chamber 40 facing each other. The buffer slot 301 has a width according to the second direction Y that is greater than a diameter of a substrate to be stored in the buffer slot 301. The buffer slot 301 has a height according to the third direction Z that is greater than a thickness of the substrate to be stored in the buffer slot 301. A length of the buffer slot 301 along the first direction X can be greater than the diameter of the substrate to be accommodated in the buffer slot 301.

[0051] ​​The buffer slots 301 can be one of a plurality of buffer slots 301, and the buffer slots 301 can be arranged to be spaced apart from each other in a height direction.

[0052] The substrate that can be introduced from the indexing chamber 22 into the processing modules 3 can be located in the buffer slots 301 (e.g., temporarily stored). Additionally, the substrate that is exported from the processing modules 3 to the indexing chamber 22 can be housed in the buffer slots 301. The support protrusions 307 can be located on the bottom of the buffer slots 301 to support the substrate stored in the buffer slots 301. The support protrusions 307 can protrude upward from the bottom of the adjacent buffer slots 301.

[0053] The buffer slots 301 can be an introduction slot 302, an export slot 303, or a combination of both. The introduction slot 302 can be located at the bottom of the buffer frame 300. For example, among the plurality of buffer slots 301, the buffer slot located at the bottom (e.g., the lowermost buffer slot) can be the introduction slot 302. The substrate that can be introduced from the indexing chamber 22 into the processing modules 3 can be located in the introduction slot 302. The indexing robot 220 of the indexing chamber 22 exports the substrate S from the substrate carrier C located at the load port 20 to the introduction slot 302. Additionally, the transfer robot 401 of the transfer chamber 40 extracts the substrate S from the introduction slot 302. The introduction slot 302 can be one of a plurality of introduction slots 302.

[0054] The export slot 303 can be located at the top of the buffer frame 300. For example, among the plurality of buffer slots 301, the buffer slot 301 located at the top (e.g., the uppermost buffer slot 301) can be the export slot 303. Thus, the export slot 303 can be located above the introduction slot 302. The substrate exported from the processing modules 3 to the indexing chamber 22 can be loaded in the export slot 303. The transfer robot 401 of the transfer chamber 40 can load the substrate to be exported from the processing modules 3 into the export slot 303. Additionally, the indexing robot 220 of the indexing chamber 22 can extract the substrate from the export slot 303 to be introduced into the substrate carrier C located at the load port 20. The export slot 303 can be one of a plurality of export slots 303.

[0055] In Figure 2 , 4 introduction slots 302 and 4 export slots 303 are shown. However, this is merely an example, and embodiments are not limited thereto. For example, based on process conditions such as the number of liquid treatment chambers 50, the number of drying chambers 60, the number of load ports 20, the time required to process the substrate in the liquid treatment chamber 50, and the time required to process the substrate in the drying chamber 60, the number of introduction slots 302 and the number of export slots 303 can vary.

[0056] The injection nozzle 310 can be provided on the buffer frame 300. The injection nozzle 310 injects a state-improving gas toward and / or into the buffer tank 301. The state-improving gas can improve a state, such as a temperature or a moisture content, of the substrate loaded in the buffer tank 301. The state-improving gas can be an inert gas. As an example, the state-improving gas can be nitrogen or the like. The injection nozzle 310 can be provided on an end portion of the buffer tank 301 in the width direction. The injection nozzle 310 can be provided on a side surface of the buffer tank 301 in the width direction. The injection nozzle 310 can be one of a plurality of injection nozzles 310, and the injection nozzle 310 can be provided on both side surfaces of the end portion of the buffer tank 301 in the width direction. Additionally, the injection nozzle 310 can be provided on only one side of the end portion of the buffer tank 301 in the width direction. Figures 2 to 4 An example in which the injection nozzle 310 is provided on both side surfaces of the end portion of the buffer tank 301 in the width direction is shown. A plurality of injection nozzles 310 can be provided along the length direction of the buffer tank 301.

[0057] The injection nozzle 310 can be connected to the gas supply member 330 through the supply flow path 331. The gas supply member 330 is connected to the injection nozzle 310 and supplies the state-improving gas to the injection nozzle 310. The gas supply member 330 can store the state-improving gas (for example, can be a gas storage container that stores the state-improving gas).

[0058] The nozzle valve 336 can be provided in the supply flow path 331 that connects the gas supply member 330 and the injection nozzle 310. The flow rate of the state-improving gas supplied to the injection nozzle 310 can be adjusted in accordance with the closed state of the nozzle valve 336. That is, when the nozzle valve 336 is open, the state-improving gas is supplied to (for example, flows to) the injection nozzle 310, and the state-improving gas is injected into the buffer tank 301. When the nozzle valve 336 is closed, the supply of the state-improving gas to the injection nozzle 310 is blocked. The nozzle valve 336 can be remotely actuated by a control signal provided by the controller.

[0059] The supply flow path 331 may include a main supply member 332, a branch supply member 333, and a nozzle connector 334. The first end of the main supply member 332 may be connected to the gas supply member 330. The branch supply member 333 may be connected to the second end of the main supply member 332. The branch supply members 333 may be provided in plurality and branch from the second end of the main supply member 332 in a parallel structure. The nozzle connector 334 connects a nozzle valve 336 and an injection nozzle 310 that injects the state-improving gas toward one buffer tank 301. The nozzle valve 336 may be provided in the branch supply member 333. Therefore, the injection of the state-improving gas toward one buffer tank 301 can be adjusted according to the closing of the nozzle valve 336, and the nozzle valve 336 can be controlled by a control signal from a controller.

[0060] The outlet 305 may be provided in the buffer frame 300. The outlet 305 may be positioned facing the buffer tank 301 or extending into the buffer tank 301. The outlet 305 may be located on at least one of the upper surface and the lower surface of the buffer tank 301. That is, the outlet 305 may be located on the upper surface of the buffer tank 301. Alternatively, the outlet 305 may be located on the lower surface of the buffer tank 301. Alternatively, the outlet 305 may be one of a plurality of outlets 305, and the first outlet 305 may be located on the upper surface of the buffer tank 301, while the second outlet 305 may be located on the lower surface of the buffer tank 301. Figures 2 to 4 The figure shows an example in which the outlets 305 are located on the upper and lower surfaces of the buffer tank 301. Multiple outlets 305 can be arranged along the width direction of the buffer tank 301. Alternatively, multiple outlets 305 can be arranged along the length direction of the buffer tank 301. Alternatively, multiple outlets 305 can be arranged along the width direction and the length direction of the buffer tank 301.

[0061] The outlet 305 can be connected to an exhaust device 340 via an exhaust flow path 341. The exhaust device 340 can be an active exhaust device that generates negative pressure, such as an exhaust fan or an exhaust pump. The exhaust device 340 is connected to the outlet 305 to generate negative pressure for the exhaust gas or other substances from the buffer tank 301.

[0062] An outlet valve 346 may be provided in an exhaust flow path 341 connecting the exhaust device 340 and the outlet 305. The state of exhaust through the outlet 305 can be adjusted depending on the closed state of the outlet valve 346. For example, when the outlet valve 346 is open, a negative pressure is generated in the outlet 305, and exhaust is performed through the outlet 305. When the outlet valve 346 is closed, exhaust through the outlet 305 is blocked. The outlet valve 346 may be remotely actuated, such as by a control signal received from a controller.

[0063] The exhaust flow path 341 can include a main exhaust 342, branch exhausts 343, and an outlet connector 344. One end of the main exhaust 342 can be connected to the exhaust 340. The branch exhausts 343 are connected to the other end of the main exhaust 342. The branch exhausts 343 can be provided in plurality and branched from the other end of the main exhaust 342 in a parallel structure. The outlet connector 344 connects the branch exhausts 343 and the outlet 305 to one buffer tank 301. An outlet valve 346 can be provided in the branch exhaust 343. Accordingly, the exhaust state of one buffer tank 301 can be adjusted according to the closing of the outlet valve 346.

[0064] The buffer side sensor 320 can be provided on the buffer frame 300. The buffer side sensor 320 can detect the state of the substrate S located in the buffer tank 301. The buffer side sensor 320 can be a humidity sensor 321 and / or a temperature sensor 322. The buffer side sensor 320 can be one buffer side sensor (e.g., a first buffer side sensor 320 can be a humidity sensor, and a second buffer side sensor 320 can be a temperature sensor) among a plurality of buffer side sensors 320.

[0065] The humidity sensor 321 is provided on the buffer frame 300 to face (e.g., can face inwardly in) the buffer tank 301. As an example, the humidity sensor 321 can be provided on the side surface of the buffer tank 301 in the width direction. Additionally, the humidity sensor 321 can be provided on the upper surface of the buffer tank 301. Additionally, the humidity sensor 321 can be provided on the lower surface of the buffer tank 301. Figures 2 to 4 An example in which the humidity sensor 321 is provided on the side surface of the buffer tank 301 in the width direction is illustrated.

[0066] The humidity sensor 321 can detect the humidity or moisture content of the substrate located in the buffer tank 301. As an example, the humidity sensor 321 can be a non-contact humidity sensor and directly sense the humidity or moisture content of the substrate. Additionally, the humidity sensor 321 can be a contact humidity sensor and detect the humidity in the buffer tank 301 in which the substrate is located, and indirectly sense the humidity of the substrate through the humidity in the buffer tank 301.

[0067] The temperature sensor 322 is provided on the buffer frame 300 to face the buffer tank 301. As an example, the temperature sensor 322 can be provided on the side surface of the buffer tank 301 in the width direction. Additionally, the temperature sensor 322 can be provided on the upper surface of the buffer tank 301. Additionally, the temperature sensor 322 can be provided on the lower surface of the buffer tank 301. Figures 2 to 4An example in which the temperature sensor 322 is provided on a side surface of the buffer tank 301 in the width direction is shown. The temperature sensor 322 can detect the temperature of the substrate located in the buffer tank 301. As an example, the temperature sensor 322 can be provided as a non-contact temperature sensor.

[0068] Figure 5 is a view showing an arm 404 of a transfer robot 401 provided in a transfer chamber 40 of Figure 1 . Figure 6 is a view showing a carry-in arm 4200 of the transfer robot 401.

[0069] Referring to Figure 1 , Figure 5 and Figure 6 , the substrate is transferred in the transfer chamber 40 between the buffer chamber 30, the liquid treatment chamber 50, and the drying chamber 60 provided around the periphery thereof. The buffer chamber 30 can be provided on one side of the transfer chamber 40 in the first direction X. The liquid treatment chamber 50 and the drying chamber 60 can be provided on one side or both sides of the transfer chamber 40 in the second direction Y.

[0070] The transfer chamber 40 can include a transfer track 400 and a transfer robot 401.

[0071] The transfer track 400 provides a path along which the transfer robot 401 moves. The length direction of the transfer track 400 can be in the first direction X.

[0072] The transfer robot 401 transfers the substrate. The transfer robot 401 can include a base 402, a robot body 403, and an arm 404.

[0073] The base 402 can be mounted on the transfer track 400 and move along the transfer track 400. The robot body 403 is connected to the base 402. The robot body 403 can move along a third direction Z or rotate about the third direction Z on the base 402. For example, an actuator such as a motor or a linear actuator can move the robot body along the transfer track 400.

[0074] The arm 404 is connected to the robot body 403. The arm 404 can move relative to the robot body 403 in a plane perpendicular to the third direction Z.

[0075] Accordingly, the transfer robot 401 moves the base 402 on the transfer track 400 and can transfer the substrate between the buffer chamber 30, the liquid treatment chamber 50, and the drying chamber 60 according to the operations of the robot body 403 and the arm 404.

[0076] The arm 404 can include arm frames 4110, 4210, and 4310 and hands 4120, 4220, and 4320. The arm frames 4110, 4210, and 4310 are connected to the robot body 403. The arm frames 4110, 4210, and 4310 can be movable relative to the robot body 403. The hands 4120, 4220, and 4320 are connected to the arm frames 4110, 4210, and 4310. Each of the arm frames 4110, 4210, and 4310 and the hands 4120, 4220, and 4320 can be connected to an adjoining element by a joint that allows at least one degree of freedom. An actuator can move an arm frame or a hand relative to another element, and the actuator can operate in response to a control signal such as from a controller. The substrate S can be located on the hands 4120, 4220, and 4320.

[0077] The arm 404 can be one of a plurality of arms 404. The plurality of arms 404 can include an out-transport arm 4100, an in-transport arm 4200, and a wet arm 4300. The out-transport arm 4100, the in-transport arm 4200, and the wet arm 4300 can be arranged along the third direction Z. The out-transport arm 4100, the in-transport arm 4200, and the wet arm 4300 can be individually drivable and movable relative to the robot body 403. The in-transport arm 4200 can be disposed below the out-transport arm 4100. The wet arm 4300 can be disposed below the out-transport arm 4100 and the in-transport arm 4200.

[0078] The out-transport arm 4100 can be used to unload the substrate S from the processing module 3 toward the indexing module 2. The out-transport arm 4100 can be used to transfer the substrate S from the dry chamber 60 to the buffer chamber 30.

[0079] The in-transport arm 4200 can be used to load the substrate S in a direction from the indexing module 2 to the processing module 3. The in-transport arm 4200 can be used to transfer the substrate S from the buffer chamber 30 to the liquid handling chamber 50.

[0080] The wet arm 4300 can be used to handle the substrate S inside the processing module 3. The wet arm 4300 can be used to transfer the substrate S from the liquid handling chamber 50 to the dry chamber 60.

[0081] A robot-side sensor 410 can be disposed in the transfer robot 401. The robot-side sensor 410 can be disposed on the arm 404. The robot-side sensor 410 can detect a state of a substrate located on the arm 404. The robot-side sensor 410 can be one of a plurality of robot-side sensors 410, such as a robot-side humidity sensor 411 or a robot-side temperature sensor 412. For example, the plurality of robot-side sensors 410 can include a first robot-side sensor that is the robot-side humidity sensor 411 and a second robot-side sensor that is the robot-side temperature sensor 412.

[0082] The robot-side humidity sensor 411 can be provided on the transfer robot 401. The robot-side humidity sensor 411 can be provided on the arm 404. The robot-side humidity sensor 411 can detect the humidity of the substrate located on the arm 404. The robot-side humidity sensor 411 can be provided on the in-loading arm 4200 and detect the humidity of the substrate S loaded on the in-loading arm 4200. As an example, the robot-side humidity sensor 411 can be provided as a non-contact humidity sensor and provided on the arm frame 4210 of the in-loading arm 4200. Additionally, the robot-side humidity sensor 411 can be provided as a contact humidity sensor 321 and provided on the hand 4220 of the in-loading arm 4200. Additionally, the robot-side humidity sensor 411 can be provided as a contact humidity sensor 321 and provided on the arm frame 4210 of the in-loading arm 4200. In this case, the robot-side humidity sensor 411 can detect the humidity around the in-loading arm 4200 and indirectly sense the humidity of the substrate S by this humidity. The robot-side humidity sensor 411 can also be provided on the out-loading arm 4100, similarly to the in-loading arm 4200. Accordingly, the robot-side humidity sensor 411 can detect the humidity of the substrate loaded on the out-loading arm 4100. The robot-side humidity sensor 411 can also be provided on the wet arm 4300, similarly to the in-loading arm 4200. Accordingly, the robot-side humidity sensor 411 can detect the humidity of the substrate loaded on the wet arm 4300.

[0083] The robot-side temperature sensor 412 can be provided in the transfer robot 401. The robot-side temperature sensor 412 can be provided on the arm 404. The robot-side temperature sensor 412 can detect the temperature of the substrate located on the arm 404. The robot-side temperature sensor 412 can be provided on the in-loading arm 4200 and detect the temperature of the substrate loaded on the in-loading arm 4200. As an example, the robot-side temperature sensor 412 can be provided as a non-contact temperature sensor and provided on the arm frame 4210 of the in-loading arm 4200. Additionally, the robot-side temperature sensor 412 can be provided as a contact temperature sensor and provided on the hand 4220 of the in-loading arm 4200. The robot-side temperature sensor 412 can also be provided on the out-loading arm 4100, similarly to the in-loading arm 4200. Accordingly, the robot-side temperature sensor 412 can detect the temperature of the substrate loaded on the out-loading arm 4100. The robot-side temperature sensor 412 can also be provided on the wet arm 4300, similarly to the in-loading arm 4200. Accordingly, the robot-side temperature sensor 412 can detect the temperature of the substrate loaded on the wet arm 4300.

[0084] Figure 6An example in which the robot-side humidity sensor 411 and the robot-side temperature sensor 412 are arranged in a region close to the hand 4220 from the arm frame 4210 of the in-feed arm 4200 is shown, but this is an example, and the robot-side humidity sensor 411 and the robot-side temperature sensor 412 can be provided in other regions of the transfer robot 401.

[0085] Figure 7 is Figure 1 a cross-sectional view of the liquid treatment chamber 50 in

[0086] Referring to Figure 7 , the liquid treatment chamber 50 can include a liquid treatment housing 500, a support plate 510, a fluid supply 520, and a chamber-side sensor 560.

[0087] The liquid treatment chamber 50 can perform a liquid treatment process that uses a chemical to treat the substrate S. As an example, the liquid treatment chamber 50 can perform a chemical process, a rinse process, and an organic solvent replacement process.

[0088] The liquid treatment housing 500 provides a space in which treatment is performed on the substrate S inside.

[0089] The support plate 510 is disposed inside the liquid treatment housing 500. The support plate 510 supports the substrate S. The support plate 510 can be rotatable about the third direction Z. As an example, a lower portion of the support plate 510 can be connected to an upper portion of a support shaft 515. A lower portion of the support shaft 515 can be connected to a driver 516. The support shaft 515 can be rotatable by power provided by the driver 516.

[0090] A plurality of support pins 511 can be provided on the support plate 510. The support pins 511 can be disposed to protrude from an upper surface of the support plate 510 in the third direction Z. The support pins among the plurality of support pins 511 can be arranged to be spaced apart from each other at regular intervals or irregular intervals. As an example, the support pins 511 can be arranged on a circular ring having a fixed radius. When the substrate S is located on the support plate 510, a bottom of the substrate S is lifted on the support pins 511.

[0091] A plurality of chuck pins 512 can be disposed on the support plate 510. The chuck pins 512 can be disposed to protrude from the upper surface of the support plate 510 in the third direction Z. The length of the chuck pins 512 in the third direction Z is longer than the length of the support pins 511, and the top of the chuck pins 512 is located above the top of the support pins 511. The chuck pins 512 are disposed at a position farther from the center of the support plate 510 than the support pins 511. The chuck pins 512 can move between a fixing position and a pickup position in the radial direction of the support plate 510. The fixing position is a position corresponding to a distance from the center of the support plate 510 to the radius of the substrate S, and the pickup position is a position farther from the center of the support plate 510 than the fixing position. When the substrate S is loaded on the support plate 510 by the transfer robot 401, the chuck pins 512 are located at the pickup position. When the substrate S is loaded on the support plate 510, the chuck pins 512 move to the fixing position and fix the substrate S by coming into contact with the side surface of the substrate S during processing. Accordingly, when the support plate 510 rotates, the chuck pins 512 can prevent the substrate S from being separated due to torque. When the process is completed, the chuck pins 512 move to the pickup position so that the transfer robot 401 can pick up the substrate S.

[0092] The fluid supply 520 can supply a fluid used to process the substrate S above the support plate 510. Accordingly, the substrate S located on the support plate 510 can be coated with a fluid used to process the substrate. The fluid supply 520 can include nozzles 531, 541, and 551 and nozzle supports 532, 542, and 552.

[0093] The nozzles 531, 541, and 551 can spray a fluid used to process the substrate S. The nozzle supports 532, 542, and 552 are connected to the nozzles 531, 541, and 551. The nozzle supports 532, 542, and 552 can move the positions of the nozzles 531, 541, and 551. Accordingly, the nozzles 531, 541, and 551 can move between a processing position and a standby position. The processing position is a position in which the nozzles 531, 541, and 551 face the support plate 510 in the third direction Z. The standby position is a position in which the nozzles 531, 541, and 551 face outside of the area of the support plate 510 in the third direction Z.

[0094] The fluid supply 520 can include a chemical fluid supply 530, a rinse fluid supply 540, and a displacement fluid supply 550. The chemical fluid supply 530, the rinse fluid supply 540, and the displacement fluid supply 550 can spray different fluids.

[0095] The chemical fluid supply 530 can include a chemical nozzle 531 and a chemical nozzle support 532.

[0096] The chemical nozzle 531 can spray a chemical. The chemical can be a cleaning solution. For example, the chemical can be: a hydrogen peroxide solution; a solution in which a hydrogen peroxide solution is mixed with ammonia, hydrochloric acid, or sulfuric acid; or a hydrofluoric acid solution. The chemical nozzle support 532 is connected to the chemical nozzle 531. The chemical nozzle support 532 can move the chemical nozzle 531 to the standby position and the processing position.

[0097] The rinse fluid supply 540 can include a rinse nozzle 541 and a rinse nozzle support 542. The rinse nozzle 541 can spray a rinse liquid. The rinse liquid can be ultrapure water or the like. The rinse nozzle support 542 is connected to the rinse nozzle 541. The rinse nozzle support 542 can move the rinse nozzle 541 to the standby position and the processing position. After the chemical is supplied to the substrate S, the rinse fluid supply 540 can supply a rinse solution to the substrate S to remove the chemical remaining on the substrate S.

[0098] The displacement fluid supply 550 can include a displacement nozzle 551 and a displacement nozzle support 552. The displacement nozzle 551 can spray an organic solvent. Examples of the organic solvent include isopropyl alcohol, ethylene glycol, 1-propanol, tetrahydrofuran, 4-hydroxy, 4-methyl, 2-pentanone, 1-butanol, 2-butanol, methanol, ethanol, n-propanol, dimethyl ether, or the like.

[0099] The displacement nozzle support 552 is connected to the displacement nozzle 551. The displacement nozzle support 552 can move the displacement nozzle 551 to the standby position and the processing position. After the rinse solution is supplied to the substrate S, the displacement fluid supply 550 can supply an organic solvent to the substrate S so that the rinse solution remaining on the substrate S is redispersed by the organic solvent.

[0100] The chamber-side sensor 560 can detect a state of the substrate S located inside the liquid handling enclosure 500. The chamber-side sensor 560 can be provided inside the liquid handling enclosure 500.

[0101] The chamber-side sensor 560 can include a chamber-side humidity sensor 561 and a chamber-side temperature sensor 562.

[0102] The chamber-side humidity sensor 561 may be provided on the fluid supply member 520. The chamber-side humidity sensor 561 may be provided on the nozzle supports 532, 542, and 552. As an example, the chamber-side humidity sensor 561 may be provided on the chemical fluid supply member 530. The chamber-side humidity sensor 561 may be provided on the chemical nozzle support 532. The chamber-side humidity sensor 561 may detect the humidity of the substrate S. As an example, the chamber-side humidity sensor 561 may be provided as a non-contact humidity sensor and may directly sense the humidity of the substrate S located on the support plate 510. Alternatively, the chamber-side humidity sensor 561 may be provided as a contact humidity sensor 321, which detects the humidity of the space in which the substrate S is located and may indirectly sense the humidity of the substrate S through this humidity.

[0103] The chamber-side temperature sensor 562 may be provided on the fluid supply member 520. The chamber-side temperature sensor 562 may be provided on the nozzle supports 532, 542, and 552. As an example, the chamber-side temperature sensor 562 may be provided on the chemical fluid supply member 530. The chamber-side temperature sensor 562 may be provided on the chemical nozzle support 532. The chamber-side temperature sensor 562 may detect the temperature of the substrate S. As an example, the chamber-side temperature sensor 562 may be provided as a non-contact temperature sensor and may detect the temperature of the substrate S positioned on the support plate 510.

[0104] Figure 8 It shows Figure 1 A view of the drying chamber 60 in FIG.

[0105] refer to Figure 8 The drying chamber 60 may dry the substrate using a supercritical fluid. The drying chamber 60 may include a drying housing 600 and a heater 601 .

[0106] The drying housing 600 provides a space in which a drying process is performed. The drying housing 600 may be provided with a pressure-resistant structure capable of withstanding high pressure.

[0107] The heater 601 may be provided in the drying housing 600 and heat the interior of the drying housing 600. The heater 601 may be provided embedded in the drying housing 600. As an example, the heater 601 may generate heat using a resistance heating method. As the interior of the drying housing 600 is heated, the fluid supplied to the drying housing 600 may more effectively maintain a supercritical state.

[0108] The dry enclosure 600 is connected to a process fluid supply 610 by a process fluid flow path 620. The process fluid supply 610 can supply fluid in a supercritical state from the dry enclosure 600. The process fluid supply 610 can generate and store fluid in a supercritical state. For example, the process fluid supply 610 can heat process fluid to a temperature above a threshold temperature and can pressurize the process fluid to a pressure above a threshold pressure of the process fluid (which can be carbon dioxide or the like), thereby placing the process fluid in a supercritical state. Fluid in a supercritical state generated in the process fluid supply 610 can be supplied to the dry enclosure 600 by the process fluid flow path 620.

[0109] Figure 9 is a block diagram illustrating a control relationship of the substrate processing apparatus 1.

[0110] With reference to Figure 9 The controller 70 controls components of the substrate processing apparatus 1. Although not illustrated, the controller 70 can include one or more of the following components: at least one central processing unit (CPU) structured to execute computer program instructions to perform various processes and methods; a random access memory (RAM) and a read only memory (ROM) structured to access and store data and information as well as computer program instructions; input / output (I / O) devices (e.g., a keyboard, a mouse, a display, a speaker, a printer, a modem, a network card, etc.) structured to provide input and / or output to the processing controller; and a storage medium or other suitable type of memory capable of storing data and / or instructions (e.g., RAM, ROM, programmable read only memory (PROM), erasable programmable read only memory (EPROM), electrically erasable programmable read only memory (EEPROM), a magnetic disk, an optical disk, a floppy disk, a hard disk, a removable magnetic disk, a flash drive, any type of tangible and non-transitory storage medium). Additionally, the controller can include an antenna, a communication interface that provides wireless and / or wired line digital and / or analog interfaces to one or more components such as sensors and actuators, a power supply that provides appropriate direct current (DC) or alternating current (AC) power to power the one or more components of the controller, and a bus that allows communication among the various disclosed components of the controller.

[0111] Moving components such as the described robot and valves can be controlled at least in part by the controller 70. Movement can be achieved by motors or actuators coupled to the components and in communication with the controller 70 by control signals. Differently described sensors can be in communication with the controller 70 by data connections.

[0112] The controller 70 can receive data about a state of the substrate S located in the buffer tank 301 from the buffer side sensor 320. The controller 70 can receive data about a humidity of the substrate S located in the buffer tank 301 from the humidity sensor 321. The controller 70 can receive data about a temperature of the substrate S located in the buffer tank 301 from the temperature sensor 322.

[0113] The controller 70 can receive data about a state of the substrate S located on the transfer robot 401 from the robot side sensor 410. The controller 70 can receive data about a humidity of the substrate S located on the transfer robot 401 from the robot side humidity sensor 411. The controller 70 can receive data about a temperature of the substrate S located on the transfer robot 401 from the robot side temperature sensor 412.

[0114] The controller 70 can receive data about a state of the substrate S located in the liquid treatment chamber 50 from the chamber side sensor 560. The controller 70 can receive data about a humidity of the substrate S located in the liquid treatment chamber 50 from the chamber side humidity sensor 561. The controller 70 can receive data about a temperature of the substrate S located in the liquid treatment chamber 50 from the chamber side temperature sensor 562.

[0115] The controller 70 can control a closed state of the nozzle valve 336 and control injection of the state improving gas into the buffer tank 301. The controller 70 can open the nozzle valve 336 so as to inject the state improving gas into the buffer tank 301. The controller 70 can close the nozzle valve 336 so as to stop the injection of the state improving gas into the buffer tank 301. The controller 70 can control an amount of the state improving gas injected into the buffer tank 301 by adjusting an opening degree of the nozzle valve 336. The controller 70 can individually control a plurality of nozzle valves 336 so as to individually control a state of injecting the state improving gas for each of a plurality of buffer tanks 301.

[0116] The controller 70 can control the exhaust device 340 and control an exhaust condition through the outlet 305. The controller 70 can operate the exhaust device 340 to perform the exhaust of the buffer tank 301 through the outlet 305. The controller 70 can stop the exhaust device 340 to stop the exhaust from the buffer tank 301 through the outlet 305.

[0117] The controller 70 can control the closed state of the outlet valve 346 to control the exhaust state through the outlet 305. The controller 70 can open the outlet valve 346 to perform the exhaust of the buffer tank 301 through the outlet 305. The controller 70 can close the outlet valve 346 to stop the exhaust from the buffer tank 301 through the outlet 305. Additionally, the controller 70 can control the amount of gas exhausted through the outlet 305 by adjusting the opening degree of the outlet valve 346. The controller 70 can individually control a plurality of outlet valves 346 and individually control the exhaust state of each of a plurality of buffer tanks 301.

[0118] The controller 70 can control the transfer robot 401 to pick up the substrate S brought into the processing module 3 from the indexing chamber 22 from the buffer chamber 30 to be returned to the liquid treatment chamber 50. The controller 70 can control the transfer robot 401 to pick up the substrate S introduced into the processing module 3 from the indexing chamber 22 from the lead-in tank 302 through the lead-in arm 4200 to be returned to the liquid treatment chamber 50.

[0119] The controller 70 can control the transfer robot 401 to pick up the substrate S that has undergone the liquid treatment process from the liquid treatment chamber 50 to be returned to the drying chamber 60. The controller 70 can control the transfer robot 401 to pick up the substrate S that has undergone the liquid treatment process from the liquid treatment chamber 50 through the wet arm 4300 to be transferred to the drying chamber 60.

[0120] The controller 70 can control the transfer robot 401 to pick up the substrate S that has undergone the drying process from the drying chamber 60 to be returned to the buffer chamber 30. The controller 70 can control the transfer robot 401 to pick up the substrate S that has undergone the drying process from the drying chamber 60 through the lead-out arm 4100 to be returned to the buffer chamber 30.

[0121] The controller 70 can control the transfer robot 401 to pick up the substrate S in which an abnormal condition is detected from the liquid treatment chamber 50 to be returned to the buffer chamber 30. The controller 70 can control the transfer robot 401 to pick up the substrate S in which an abnormal condition is detected through the lead-in arm 4200 and return it to the lead-in tank 302 of the buffer chamber 30.

[0122] Figure 10 is a view showing a state in which a state improving gas is injected into the buffer tank 301.

[0123] Reference Figure 10While the substrate S is in the state of being located in the buffer slot 301, the controller 70 can control the state improvement gas to be injected. Additionally, when the state improvement gas is injected, the controller 70 can control the exhaust device 340, the outlet valve 346, or the exhaust device 340 and the outlet valve 346, so that the exhaust occurs through the outlet 305. When the state improvement gas is injected, the substrate S can be cooled. Additionally, when the state improvement gas is injected, moisture can be evaporated from the substrate S, thereby reducing the humidity of the substrate S. Additionally, when the state improvement gas is injected, particles attached to the substrate S can be removed.

[0124] For example, while the substrate S introduced from the indexing module 2 to the processing module 3 is located in the introduction slot 302, the controller 70 can control the state improvement gas to be injected into the introduction slot 302. Additionally, the controller 70 can ensure that the exhaust is performed through the outlet 305 of the introduction slot 302 when the state improvement gas is injected into the introduction slot 302.

[0125] Additionally, while the substrate S introduced from the indexing module 2 to the processing module 3 is located in the introduction slot 302, the controller 70 can monitor the state of the substrate S through the buffer side sensor 320. Additionally, when the controller 70 detects that the temperature of the substrate S exceeds a predetermined value or the humidity of the substrate S exceeds a predetermined value, it can cause the state improvement gas to be injected. The predetermined value can be a threshold value. For example, the controller can cause the state improvement gas to be injected in response to the temperature of the substrate S rising above the threshold value, or in another example, the controller can cause the state improvement gas to be injected in response to the temperature of the substrate S falling below the threshold value.

[0126] Additionally, while the substrate S introduced from the indexing module 2 to the processing module 3 is located in the introduction slot 302, the controller 70 can cause the state improvement gas to be injected in batches. For example, when it is detected that the temperature of the substrate S is lower than a predetermined value, the controller 70 can stop the injection of the state improvement gas. In another example, when the state improvement gas is injected and it is detected that the humidity of the substrate S is lower than a predetermined value, the controller 70 can stop the injection of the state improvement gas. In another example, when the state improvement gas is injected and it is detected that the temperature of the substrate S is lower than a predetermined value and it is detected that the humidity of the substrate S is lower than a predetermined value, the controller 70 can stop the injection of the state improvement gas.

[0127] Additionally, while the substrate S introduced from the indexing module 2 to the processing module 3 is located in the introduction slot 302, the controller 70 can cause the state improvement gas to be injected in batches. And, when the transfer robot 401 loads the substrate S and the introduction slot 302 becomes empty, the controller 70 can stop the injection of the state improvement gas.

[0128] Additionally, the controller 70 can cause the state improving gas to be injected into the evacuation slot 303 when the substrate S being evacuated from the processing module 3 to the indexing module 2 is located in the evacuation slot 303. Additionally, the controller 70 ensures that the exhaust is performed through the outlet 305 of the evacuation slot 303 when the state improving gas is injected into the evacuation slot 303.

[0129] Additionally, the controller 70 can monitor the state of the substrate S through the buffer side sensor 320 when the substrate S being evacuated from the processing module 3 to the indexing module 2 is located in the evacuation slot 303. Additionally, the controller 70 can cause the state improving gas to be injected when it detects that the temperature of the substrate S exceeds a predetermined value or the humidity of the substrate S is higher than a predetermined value.

[0130] Additionally, the controller 70 can cause the state improving gas to be injected all at once when the substrate S being evacuated from the processing module 3 to the indexing module 2 is located in the evacuation slot 303. Also, the controller 70 can stop the injection of the state improving gas when it detects that the temperature of the substrate S is lower than a predetermined value. In an example, the controller 70 can stop the injection of the state improving gas when it detects that the humidity of the substrate S is lower than a predetermined value while the state improving gas is being injected. In an example, the controller 70 can stop the injection of the state improving gas when it detects that the temperature of the substrate S is lower than a predetermined value and it detects that the humidity of the substrate S is lower than a predetermined value while the state improving gas is being injected.

[0131] Additionally, the controller 70 can cause the state improving gas to be injected all at once when the substrate S being evacuated from the processing module 3 to the indexing module 2 is located in the evacuation slot 303. Also, the controller 70 can stop the injection of the state improving gas when the indexing robot 220 evacuates the substrate S and the evacuation slot 303 becomes empty.

[0132] Additionally, the controller 70 can monitor the state of the substrate S through the robot-side sensor 410 while the substrate S is located in the transfer robot 401. And, when it is detected that the temperature of the substrate S located in the in-feed arm 4200 is higher than a predetermined value or the humidity of the substrate S is higher than a predetermined value, the controller 70 can return the substrate S to the buffer chamber 30. Accordingly, the substrate S is returned to the buffer chamber 30 before being subjected to the liquid treatment in the liquid treatment chamber 50. Hereinafter, the substrate S brought from the indexing module 2 to the processing module 3 and returned to the buffer chamber 30 before the liquid treatment process is referred to as a substrate to be improved. At this time, the controller 70 can position the substrate to be improved S in the in-feed slot 302. Accordingly, the substrate S is located in the out-feed slot 303 before the processing in the processing module 3 is completed, thereby preventing the out-feed slot 303 from being contaminated by the substrate S. Additionally, the controller 70 can cause the state-improving gas to be injected into the in-feed slot 302 where the substrate to be improved is located. Accordingly, the condition of the substrate to be improved can be improved by lowering the temperature and humidity by the state-improving gas. Thereafter, when it is detected by the buffer-side sensor 320 that the temperature of the substrate to be improved is lower than a predetermined value, the controller 70 can bring in the substrate S through the transfer robot 401. In contrast, when it is detected by the buffer-side sensor 320 that the humidity of the substrate to be improved S is lower than a predetermined value, the controller 70 can bring in the substrate S through the transfer robot 401. On the other hand, when it is detected by the buffer-side sensor 320 that the temperature of the substrate to be improved S is lower than a predetermined value and the humidity of the substrate to be improved S is lower than a predetermined value, the controller 70 can bring in the substrate S through the transfer robot 401. At this time, the controller 70 can pick up the substrate S through the in-feed arm 4200 and then return it to the liquid treatment chamber 50.

[0133] Additionally, while the substrate S is located in the liquid treatment chamber 50, the controller 70 can monitor the state of the substrate S through the chamber-side sensor 560. Additionally, if it is detected that the temperature of the substrate S is higher than a predetermined value or the humidity of the substrate S is higher than a predetermined value, the controller 70 can return the substrate S to be improved to the buffer chamber 30. Accordingly, the substrate S to be improved is returned to the buffer chamber 30 before being subjected to liquid treatment in the liquid treatment chamber 50. At this time, the controller 70 can pick up the substrate S to be improved through the in-feed arm 4200 to be returned to the buffer chamber 30. The controller 70 can position the substrate S to be improved in the in-feed slot 302. Accordingly, the substrate S is located in the out-feed slot 303 before the processing in the processing module 3 is completed, thereby preventing the out-feed slot 303 from being contaminated by the substrate S. Additionally, the controller 70 can cause the state improvement gas to be injected into the in-feed slot 302 in which the substrate S to be improved is located. Accordingly, the condition of the substrate S to be improved can be improved by lowering the temperature and the humidity by the state improvement gas. Thereafter, when it is detected through the buffer-side sensor 320 that the temperature of the substrate S to be improved is lower than a predetermined value, the controller 70 can transfer the substrate S through the transfer robot 401. In an example, when it is detected through the buffer-side sensor 320 that the humidity of the substrate S to be improved is lower than a predetermined value, the controller 70 can bring in the substrate S through the transfer robot 401. On the other hand, when it is detected through the buffer-side sensor 320 that the temperature of the substrate S to be improved is lower than a predetermined value and the humidity of the substrate S to be improved is lower than a predetermined value, the controller 70 can in-feed the substrate S through the transfer robot 401. At this time, the controller 70 can pick up the substrate S through the in-feed arm 4200 and then return it to the liquid treatment chamber 50.

[0134] The substrate processing apparatus 1 according to the embodiment can manage the temperature or the humidity of the substrate S. The substrate S brought into the substrate processing apparatus 1 is located in the buffer chamber 30 and waits for a certain period of time. Generally, the processing of the substrate S is performed while a plurality of substrates S are brought into the inside of the processing module 3. Accordingly, a deviation can occur within the waiting time of the substrate S in the buffer chamber 30. As the waiting time of the substrate S in the buffer chamber 30 increases, the temperature or the humidity of the substrate S changes. If the temperature or the humidity of the substrate S is outside of an appropriate range, this causes a poor processing and a reduction in yield. On the other hand, in the substrate processing apparatus 1 according to the embodiment, even when the waiting time of the substrate S in the buffer chamber 30 increases, the temperature and the humidity of the substrate S are managed in response thereto. Accordingly, defects of the processed substrate S and a reduction in yield are prevented or reduced.

[0135] Additionally, the substrate processing apparatus 1 according to the embodiment additionally manages the temperature or the humidity of the substrate S in a section after the buffer chamber 30 introduced into the processing module 3.

[0136] Further, the substrate processing apparatus 1 according to the embodiment removes particles adhering to the substrate S during a process of treating the substrate S with the state improvement gas, thereby preventing or reducing occurrence of defects and yield reduction.

[0137] Figure 11 is a view showing a state of spraying the state improvement gas when the substrate is loaded into the buffer tank 301.

[0138] Referring to Figure 11 During a process of positioning the substrate S in the buffer tank 301, the controller 70 can control injection of the state improvement gas. Further, when the state improvement gas is injected, the controller 70 can control the exhaust device 340, the outlet valve 346, or the exhaust device 340 and the outlet valve 346, so that exhaust occurs through the outlet 305.

[0139] For example, when the substrate S introduced from the indexing module 2 to the processing module 3 is positioned in the introduction tank 302, the controller 70 can cause the state improvement gas to be sprayed into the introduction tank 302. Further, the controller 70 can ensure that exhaust is performed through the outlet 305 of the introduction tank 302 when the state improvement gas is injected into the introduction tank 302.

[0140] Further, during a process of positioning the substrate S introduced from the processing module 3 to the indexing module 2 in the discharge tank 303, the controller 70 can cause the state improvement gas to be sprayed into the discharge tank 303. Further, when the state improvement gas is injected into the discharge tank 303, the controller 70 can ensure that exhaust is performed through the outlet 305 of the discharge tank 303.

[0141] Further, during a process of positioning the substrate S to be improved in the introduction tank 302, the controller 70 can cause the state improvement gas to be sprayed into the introduction tank 302. Further, when the state improvement gas is injected into the introduction tank 302, the controller 70 can ensure that the gas is exhausted through the outlet 305 of the introduction tank 302.

[0142] Figure 12 is a view showing a state of spraying the state improvement gas when the substrate is unloaded into the buffer tank 301.

[0143] Referring to Figure 12 During a process of unloading the substrate S in the buffer tank 301, the controller 70 can control injection of the state improvement gas. Further, when the state improvement gas is injected, the controller 70 can control the exhaust device 340, the outlet valve 346, or the exhaust device 340 and the outlet valve 346, so that exhaust occurs through the outlet 305.

[0144] For example, in a process of unloading the substrate S introduced from the indexing module 2 to the processing module 3 in the introduction slot 302, the controller 70 can cause the state improvement gas to be injected into the introduction slot 302. Additionally, when the state improvement gas is injected into the introduction slot 302, the controller 70 can ensure that the gas is discharged through the outlet 305 of the introduction slot 302.

[0145] Additionally, in a process of unloading the substrate S introduced from the processing module 3 to the indexing module 2 from the discharge slot 303, the controller 70 can cause the state improvement gas to be injected into the discharge slot 303. Additionally, when the state improvement gas is injected into the discharge slot 303, the controller 70 can ensure that the gas is discharged through the outlet 305 of the discharge slot 303.

[0146] Additionally, in a process of unloading the substrate S introduced from the processing module 3 to the indexing module 2 from the discharge slot 303, the controller 70 can cause the state improvement gas to be injected into the discharge slot 303. Additionally, when the state improvement gas is injected into the discharge slot 303, the controller 70 can ensure that the gas is discharged through the outlet 305 of the discharge slot 303.

[0147] Figure 13 is a partial area of a drawing for the buffer frame 300a included in the buffer chamber 30a, viewed along a first direction, according to another embodiment. Figure 14 is Figure 13 is a plan view of one buffer slot in the buffer frame 300a.

[0148] Referring to Figure 13 and Figure 14 , the buffer chamber 30a can include a buffer frame 300a, an injection nozzle 310a, and a buffer side sensor 320a.

[0149] The structure of the buffer frame 300a is the same as or similar to the buffer frame 300 described above in Figures 1 to 4 , and repeated explanations will be omitted.

[0150] The injection nozzle 310a can be provided in the buffer frame 300a. The injection nozzle 310a injects a state improvement gas toward and / or into the buffer slot 301a. The state improvement gas can be an inert gas. As an example, the state improvement gas can be nitrogen or the like. The injection nozzle 310a can be provided on at least one of the upper surface and the lower surface of the buffer slot 301a. That is, the injection nozzle 310a can be provided on the upper surface and the lower surface of the buffer slot 301a. Additionally, the injection nozzle 310a can be provided only on the upper surface of the buffer slot 301a. Additionally, the injection nozzle 310a can be provided only on the lower surface of the buffer slot 301a. Figure 13The case where the injection nozzle 310a is provided on the upper surface and the lower surface of the buffer tank 301a is illustrated. A plurality of injection nozzles 310a can be provided along the length direction of the buffer tank 301a. Additionally, a plurality of injection nozzles 310a can be provided along the width direction of the buffer tank 301a. Additionally, a plurality of injection nozzles 310a can be provided along the length direction and the width direction of the buffer tank 301a.

[0151] The injection nozzle 310a can be connected to the gas supply member 330a through the supply flow path 331a. The gas supply member 330a is connected to the injection nozzle 310a and supplies the state-improving gas to the injection nozzle 310a. The gas supply member 330a can store the state-improving gas.

[0152] The nozzle valve 336a can be provided on the supply flow path 331a connecting the gas supply member 330a and the injection nozzle 310a. The state of the state-improving gas supplied to the injection nozzle 310a can be adjusted depending on the closed state of the nozzle valve 336a. That is, when the nozzle valve 336a is open, the state-improving gas is supplied to the injection nozzle 310a, and the state-improving gas is injected into the buffer tank 301a. When the nozzle valve 336a is closed, the supply of the state-improving gas to the injection nozzle 310a is blocked. The structure of the supply flow path 331a is the same as or similar to the supply flow path 331 described above in Figures 2 to 4 , and the description to be repeated can be omitted.

[0153] The outlet 305a can be located in the buffer frame 300a. The outlet 305a can be positioned to face the buffer tank 301a. The outlet 305a can be located at least on one end portion of the buffer tank 301a in the width direction. That is, the outlet 305a can be located on both end portions of the buffer tank 301a in the width direction. Additionally, the outlet 305a can be located on one end portion of the buffer tank 301a in the width direction. The outlet 305a can be located on one side of the buffer tank 301a in the width direction. Additionally, the outlet 305a can be located at a corner where the side surface and the top surface of the buffer tank 301a meet. Additionally, the outlet 305a can be located at a corner where the side surface and the lower surface of the buffer tank 301a meet. In addition, the outlet 305a can be located at an end portion of the upper surface of the buffer tank 301a in the width direction. Additionally, the outlet 305a can be located at an end portion of the lower surface of the buffer tank 301a in the width direction. Figure 13 and Figure 14 An example in which the outlet 305a is located on both sides of the buffer tank 301a in the width direction is shown. A plurality of outlets 305a can be provided along the length direction of the buffer tank 301a.

[0154] The outlet 305a can be connected to the exhaust device 340a through the exhaust flow path 341a. The exhaust device 340a can be connected to the outlet 305a to generate a negative pressure for the exhaust device. The exhaust device 340a can include a pump.

[0155] The outlet valve 346a can be disposed on the exhaust flow path 341a connecting the exhaust device 340a and the outlet 305a. The exhaust state through the outlet 305a can be adjusted according to the closed state of the outlet valve 346a. That is, when the outlet valve 346a is open, a negative pressure is generated in the outlet 305a, and the exhaust is performed through the outlet 305a. When the outlet valve 346a is closed, the exhaust through the outlet 305a is blocked.

[0156] The structure of the exhaust flow path 341a is the same as or similar to the exhaust flow path 341 described above in Figures 2 to 4 , and a description that will be repeated can be omitted.

[0157] The buffer side sensor 320a can be disposed in the buffer frame 300a. The buffer side sensor 320a can detect the state of the substrate S located in the buffer tank 301a. The buffer side sensor 320a can include a humidity sensor 321a and a temperature sensor 322a. The buffer side sensor 320a can be the same as or similar to the buffer side sensor 320 described above in Figures 2 to 4 . In addition, the method by which the controller 70 controls the buffer chamber 30a can be the same as or similar to the method described above in Figures 9 to 12 . Therefore, repeated explanations are omitted.

[0158] Figure 15 is a cross-sectional view of a liquid treatment chamber 50a according to another embodiment.

[0159] Referring to Figure 15 , the liquid treatment chamber 50a can include a liquid treatment housing 500a, a support plate 510a, a fluid supply 520a, and a chamber side sensor 560a.

[0160] The chamber side sensor 560a can be disposed inside the liquid treatment housing 500a. The chamber side sensor 560a can detect the state of the substrate S located inside the liquid treatment housing 500a.

[0161] The chamber side sensor 560a can include a chamber side humidity sensor 561a and a chamber side temperature sensor 562a.

[0162] The chamber side humidity sensor 561a can be disposed on the support plate 510a. The chamber side humidity sensor 561a can be disposed on the upper surface of the support plate 510a. Accordingly, when the substrate S is located on the support plate 510a, the chamber side humidity sensor 561a can face the substrate S.

[0163] The chamber-side humidity sensor 561a can detect humidity of the substrate S. For example, the chamber-side humidity sensor 561a is disposed as a non-contact humidity sensor and can directly sense humidity of the substrate S located on the support plate 510a. Also, the chamber-side humidity sensor 561a is disposed as a contact humidity sensor and can detect humidity of a space on the support plate 510a and indirectly sense humidity of the substrate S through the humidity.

[0164] The chamber-side temperature sensor 562a can be disposed on the support plate 510a. The chamber-side temperature sensor 562a can be disposed on an upper surface of the support plate 510a. Accordingly, when the substrate S is located on the support plate 510a, the chamber-side temperature sensor 562a can face the substrate S.

[0165] The chamber-side temperature sensor 562a can detect temperature of the substrate S. As an example, the chamber-side temperature sensor 562a is disposed as a non-contact temperature sensor and can detect temperature of the substrate S located on the support plate 510a.

[0166] The remaining configuration of the liquid treatment chamber 50a is the same as or similar to the liquid treatment chamber 50 described above in Figure 7 , and a description to be repeated can be omitted. Also, the chamber-side sensor 560a can be used interchangeably with the chamber-side sensor 560 described above in Figure 7 . That is, the chamber-side humidity sensor 561a and / or the chamber-side temperature sensor 562a can be disposed in the fluid supply 520a as in the liquid treatment chamber 50 described above in Figure 7 .

[0167] Figure 16 is a cross-sectional view of a liquid treatment chamber 50b according to another embodiment.

[0168] Referring to Figure 16 , the liquid treatment chamber 50b can include a liquid treatment housing 500b, a support plate 510b, a fluid supply 520b, and a chamber-side sensor 560b.

[0169] The chamber-side sensor 560b can be disposed inside the liquid treatment housing 500b. The chamber-side sensor 560b can detect a state of the substrate S located inside the liquid treatment housing 500b.

[0170] The chamber-side sensor 560b can include a chamber-side humidity sensor 561b and a chamber-side temperature sensor 562b.

[0171] The chamber-side humidity sensor 561b can be disposed on an inner surface of the liquid treatment housing 500b. As an example, the chamber-side humidity sensor 561b can be disposed on an inner surface of a side wall or an upper wall of the liquid treatment housing 500b. Figure 16The case where the chamber-side humidity sensor 561b is provided on the inner surface of the side wall of the liquid handling housing 500b is shown.

[0172] The chamber-side humidity sensor 561b can detect the humidity of the substrate S. As an example, the chamber-side humidity sensor 561b is configured as a non-contact humidity sensor and can directly sense the humidity of the substrate S located on the support plate 510b. Alternatively, the chamber-side humidity sensor 561b can be configured as a contact humidity sensor and can detect the humidity of the space above the support plate 510b and indirectly sense the humidity of the substrate S through the humidity.

[0173] The chamber side temperature sensor 562b may be disposed on the inner surface of the liquid disposal housing 500b. As an example, the chamber side temperature sensor 562b may be disposed on the inner surface of the side wall or the upper wall of the liquid disposal housing 500b. Figure 16 , the case where the chamber-side temperature sensor 562b is provided on the inner surface of the side wall of the liquid handling housing 500b is shown.

[0174] The chamber-side temperature sensor 562 b may detect the temperature of the substrate S. As an example, the chamber-side temperature sensor 562 b is provided as a non-contact temperature sensor and may detect the temperature of the substrate S positioned on the support plate 510 b.

[0175] The rest of the structure of the liquid handling chamber 50b is the same as that in the above Figure 7 The liquid handling chamber 50 described in the above is the same or similar, and the repeated description can be omitted. In addition, the chamber side sensor 560b can be the same as that in the above Figure 7 The chamber side sensor 560 or above described in Figure 15 That is, the room side humidity sensor 561b and / or the room side temperature sensor 562b can be used interchangeably as described above. Figure 7 The liquid handling chamber 50 described in the embodiment of the present invention is provided in the fluid supply member 520b. Alternatively, the chamber side humidity sensor 561b and / or the chamber side temperature sensor 562b may be provided as described above in the embodiment of the present invention. Figure 15 The liquid handling chamber 50a described in FIG. 5 is also arranged on the support plate 510b.

[0176] While the disclosure has been described in connection with what are presently considered to be practical example embodiments, it is to be understood that the disclosure is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0177] <Description of the symbol> 2: Indexing module 3: Processing module 20: Loading port 22: Indexing chamber 30: Buffer chamber 40: Transfer chamber 50: Liquid handling chamber 60: Drying chamber 220: Indexing robot 300: Buffer frame 301: Buffer slot 305: Outlet 310: Spray nozzle 320: Buffer side sensor 321: Humidity sensor 322: Temperature sensor 400: Transfer track 401: Transfer robot 410: Robot side sensor 500: Liquid handling housing 510: Support plate 520: Fluid supply 560: Chamber side sensor 561: Chamber side humidity sensor 562: Chamber side temperature sensor 600: Drying housing 610: Process fluid supply

Claims

1. A substrate processing apparatus comprising: an indexing module including a load port configured to receive a substrate carrier; and a processing module connected to the indexing module and including a transfer chamber, a processing chamber, and a buffer chamber, and wherein the processing chamber is connected to the transfer chamber and the buffer chamber is disposed between the indexing module and the transfer chamber, wherein the transfer chamber includes a transfer robot configured to transfer a substrate between the buffer chamber and the processing chamber, and wherein the buffer chamber includes: a buffer frame including a plurality of buffer slots, each of the plurality of buffer slots configured to store a respective substrate; an injection nozzle disposed on the buffer frame and configured to inject a state improving gas into a buffer slot of the plurality of buffer slots; and at least one buffer side sensor disposed on the buffer frame and configured to detect a state of a substrate located in the buffer slot.

2. The substrate processing apparatus of claim 1, wherein the buffer frame includes an outlet extending into the buffer slot of the plurality of buffer slots.

3. The substrate processing apparatus of claim 1, wherein the injection nozzle is disposed at an end of the buffer slot in a width direction.

4. The substrate processing apparatus of claim 3, wherein the buffer frame includes an outlet located on at least one of an upper surface or a lower surface of the buffer slot.

5. The substrate processing apparatus of claim 1, wherein the injection nozzle is disposed on at least one of an upper surface or a lower surface of the buffer slot.

6. The substrate processing apparatus of claim 5, wherein the buffer frame includes an outlet located on an end of the buffer slot in a width direction.

7. The substrate processing apparatus of claim 1, wherein the at least one buffer side sensor includes: a humidity sensor configured to detect a humidity of the substrate located in the buffer slot; and a temperature sensor configured to detect a temperature of the substrate located in the buffer slot.

8. The substrate processing apparatus of claim 1, wherein the transfer chamber further includes at least one robot side sensor disposed in the transfer robot and configured to detect a state of a substrate located in the transfer robot.

9. The substrate processing apparatus of claim 8, wherein the at least one robot side sensor includes: a robot side humidity sensor to detect a humidity of the substrate located in the transfer robot; and a robot side temperature sensor to detect a temperature of the substrate located in the transfer robot.

10. The substrate processing apparatus of claim 8, wherein the transfer robot includes at least one arm, and the at least one robot side sensor is disposed on the at least one arm.

11. The substrate processing apparatus according to claim 1, wherein the processing chamber includes: a liquid treatment chamber configured to perform a liquid treatment process using a chemical to treat the substrate; and a drying chamber configured to dry the substrate using a supercritical fluid.

12. The substrate processing apparatus according to claim 11, wherein the liquid treatment chamber includes: a liquid treatment housing; a support plate disposed inside the liquid treatment housing and configured to support a substrate inside the liquid treatment housing; a fluid supply configured to supply a fluid used for substrate processing; and at least one chamber-side sensor configured to detect a state of the substrate located inside the liquid treatment housing.

13. The substrate processing apparatus according to claim 12, wherein the at least one chamber-side sensor is disposed on the fluid supply.

14. The substrate processing apparatus according to claim 12, wherein the at least one chamber-side sensor is disposed on the support plate.

15. The substrate processing apparatus according to claim 12, wherein the at least one chamber-side sensor is disposed on an inner surface of the liquid treatment housing.

16. A substrate processing apparatus comprising: an indexing module including a load port configured to receive a substrate carrier; a processing module connected to the indexing module and including a transfer chamber, a liquid treatment chamber, a drying chamber, and a buffer chamber; and a controller, wherein the liquid treatment chamber and the drying chamber are connected to the transfer chamber and the buffer chamber is disposed between the indexing module and the transfer chamber, wherein the transfer chamber includes a transfer robot configured to transfer a substrate between the buffer chamber and the liquid treatment chamber and between the buffer chamber and the drying chamber, and wherein the liquid treatment chamber is configured to treat the substrate using a chemical, wherein the drying chamber is configured to dry the substrate using a fluid in a supercritical state, and wherein the buffer chamber includes: a buffer frame including a plurality of buffer slots, each of the plurality of buffer slots configured to store a respective substrate; an injection nozzle disposed on the buffer frame and configured to inject a state-improving gas into a buffer slot of the plurality of buffer slots; and at least one buffer-side sensor disposed on the buffer frame and configured to detect a state of the respective substrate stored in the buffer slot, and wherein the controller is configured to cause the injection nozzle to inject the state-improving gas in response to a temperature of the respective substrate or a humidity of the respective substrate detected by the at least one buffer-side sensor exceeding a predetermined value.

17. The substrate processing apparatus according to claim 16, wherein the transfer robot includes a carry-in arm configured to transfer the substrate from the buffer chamber to the liquid treatment chamber, and the carry-in arm includes a substrate support configured to support the substrate. The transfer chamber further includes a robot-side sensor disposed on the transfer robot and configured to detect a state of a substrate loaded in the in-feed arm.

18. The substrate processing apparatus of claim 17, wherein, the controller is further configured to cause the substrate loaded in the in-feed arm to be transferred to the buffer chamber in response to a temperature of the substrate loaded in the in-feed arm or a humidity of the substrate loaded in the in-feed arm detected by the robot-side sensor exceeding a threshold value.

19. The substrate processing apparatus of claim 17, wherein, the liquid treatment chamber includes: a liquid treatment housing; a support plate disposed inside the liquid treatment housing and configured to support the substrate; a fluid supply configured to supply a fluid used for processing the substrate; and at least one chamber-side sensor configured to detect a state of a substrate located inside the liquid treatment housing, wherein the controller is further configured to cause the substrate located in the liquid treatment chamber to be transferred to the buffer chamber in response to a temperature of the substrate located in the liquid treatment chamber or a humidity of the substrate located in the liquid treatment chamber detected by the at least one chamber-side sensor exceeding a threshold value.

20. A substrate processing apparatus, the substrate processing apparatus comprising: an indexing module including a load port configured to receive a substrate carrier; a transfer chamber including a transfer robot configured to transfer a substrate to and from the load port; a liquid treatment chamber connected to the transfer chamber and configured to treat the substrate using a chemical; a drying chamber connected to the transfer chamber and configured to dry the substrate using a fluid in a supercritical state; a buffer chamber disposed between the indexing module and the transfer chamber; and a controller, wherein the buffer chamber includes: a buffer frame including a plurality of buffer slots, each of the plurality of buffer slots configured to store a respective substrate; an injection nozzle disposed on the buffer frame and configured to inject a state-improving gas into a buffer slot of the plurality of buffer slots; and at least one buffer-side sensor disposed on the buffer frame and configured to detect a state of a substrate located in the buffer slot, wherein, the transfer robot includes an in-feed arm configured to transfer the substrate from the buffer chamber to the liquid treatment chamber, the transfer chamber further includes at least one robot-side sensor disposed on the transfer robot and configured to detect a state of a substrate loaded in the in-feed arm, and the liquid treatment chamber includes: a liquid treatment housing; a support plate disposed inside the liquid treatment housing and configured to support the substrate inside the liquid treatment housing; ​ a fluid supply configured to supply a fluid used for processing the substrate in the liquid treatment housing; and at least one chamber-side sensor configured to detect a state of the substrate located inside the liquid treatment housing.

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