Preparation method of semiconductor structure, preparation method of display panel and display panel

Abstract

The invention discloses a preparation method of a semiconductor structure, a preparation method of a display panel and the display panel. The preparation method of the semiconductor structure comprises the following steps: forming a positive photoresist layer on one side of a substrate; the positive photoresist layer is exposed and developed to form a plurality of positive photoresist structure groups, each positive photoresist structure group comprises two positive photoresist structures, and a gap is formed between the two positive photoresist structures; forming a negative photoresist layer covering the gap and the positive photoresist structure; exposing and developing the negative photoresist layer to remove a part of the negative photoresist layer above the positive photoresist structure; and stripping the positive photoresist structure. According to the invention, the negative photoresist layer with the structural characteristics of wider top and narrower bottom can be formed, the preparation of the physical separation layer can be realized without developing a novel material, and the semiconductor structure can be used as the physical separation layer in the display panel to reduce the problem of low-gray-scale crosstalk in the display panel.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of display, and in particular, to a semiconductor structure preparation method, a display panel preparation method and a display panel. BACKGROUND

[0002] At present, an organic light-emitting diode (OLED) has a series of advantages such as self-luminous, wide viewing angle, light, thin, high brightness, low power consumption and fast response, and therefore, the OLED display panel has become a very popular display device at home and abroad, and has a broad application prospect.

[0003] The OLED display panel is usually based on a plurality of different color sub-pixels to realize full-color display, and because the starting gray scale of different color sub-pixels is different, the horizontal crosstalk problem is prone to occur at a low gray scale, resulting in poor display effect. SUMMARY

[0004] The present application provides a semiconductor structure preparation method, a display panel preparation method and a display panel to solve the horizontal crosstalk problem of the display panel at a low gray scale.

[0005] In a first aspect, the embodiments of the present application provide a semiconductor structure preparation method, comprising:

[0006] forming a positive photoresist layer on one side of a substrate;

[0007] exposing and developing the positive photoresist layer to form a plurality of positive photoresist structure groups, each of the positive photoresist structure groups comprising two positive photoresist structures with a gap between the two positive photoresist structures;

[0008] forming a negative photoresist layer covering the gap and the positive photoresist structures;

[0009] exposing and developing the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structures;

[0010] stripping the positive photoresist structures.

[0011] Further, the forming of the positive photoresist layer on one side of the substrate comprises:

[0012] forming a uniform positive photoresist layer on the upper surface of the substrate by a coating process.

[0013] Further, the positive photoresist layer is exposed and developed to form a plurality of positive photoresist structure groups, each of the positive photoresist structure groups comprising two positive photoresist structures with a gap therebetween, comprising:

[0014] The exposure plate is placed above the side of the positive photoresist layer away from the substrate, and the positive photoresist layer is exposed by a light source above the exposure plate.

[0015] The exposed positive photoresist layer is developed by a developing solution, and a plurality of unexposed regions of the developed positive photoresist layer form a plurality of positive photoresist structure groups, each of the positive photoresist structure groups comprising two positive photoresist structures with a gap therebetween.

[0016] The cross section of the positive photoresist structure is a right trapezoid, and the cross section of the gap is an inverted trapezoid.

[0017] Further, a negative photoresist layer covering the gap and the positive photoresist structure is formed, comprising:

[0018] A negative photoresist layer covering the gap and the positive photoresist structure is formed on the upper surface of the positive photoresist structure by a coating process.

[0019] Further, the negative photoresist layer is exposed and developed to remove part of the negative photoresist layer above the positive photoresist structure, comprising:

[0020] The exposure plate is placed above the side of the negative photoresist layer away from the substrate, and the projection of the light-shielding area of the exposure plate on the substrate overlaps with the projection of the upper surface of the positive photoresist structure on the substrate, and the negative photoresist layer is exposed by a light source above the exposure plate.

[0021] The exposed negative photoresist layer is developed by a developing solution to form a negative photoresist structure in the exposed region of the negative photoresist layer.

[0022] The upper surface of the positive photoresist structure is the surface of the positive photoresist structure away from the substrate.

[0023] Further, the negative photoresist structure comprises a first negative photoresist structure and a second negative photoresist structure.

[0024] The first negative photoresist structure includes negative photoresist in the gap, and the second negative photoresist structure includes negative photoresist away from the substrate side of the gap; the cross section of the first negative photoresist structure is inverted trapezoidal, and the cross section of the second negative photoresist structure is rectangular.

[0025] Further, the process of removing part of the negative photoresist layer above the positive photoresist structure further includes:

[0026] Thinning the positive photoresist structure.

[0027] In a second aspect, the embodiments of the present application further provide a preparation method of a display panel, comprising:

[0028] Providing a substrate; forming a pixel definition layer on one side of the substrate, the pixel definition layer comprising pixel definition structures and openings between the pixel definition structures;

[0029] Forming a positive photoresist layer on the pixel definition structure;

[0030] Exposing and developing the positive photoresist layer to form a plurality of positive photoresist structure groups, each of the positive photoresist structure groups comprising two positive photoresist structures, and the two positive photoresist structures having a gap therebetween;

[0031] Forming a negative photoresist layer covering the gap and the positive photoresist structure;

[0032] Exposing and developing the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structure;

[0033] Stripping the positive photoresist structure to form a partition structure.

[0034] In a third aspect, the embodiments of the present application further provide a display panel, which is formed based on any of the preparation methods of the display panel described in the embodiments of the present application, and the display panel comprises:

[0035] A substrate;

[0036] A pixel definition layer on one side of the substrate, the pixel definition layer comprising pixel definition structures and openings between the pixel definition structures;

[0037] A partition structure on the side of the pixel definition layer away from the substrate and in contact with the pixel definition structure, the material of the partition structure being negative photoresist.

[0038] Further, the display panel further comprises:

[0039] An isolation column above the pixel definition structure;

[0040] Part of the partition structure is located between the isolation column and the opening, and the height of the isolation column is greater than the height of the partition structure.

[0041] The application discloses a preparation method of a semiconductor structure, which comprises the following steps: forming a positive photoresist layer on one side of a substrate; performing exposure and development on the positive photoresist layer to form a plurality of positive photoresist structure groups, wherein each positive photoresist structure group comprises two positive photoresist structures, and the two positive photoresist structures have a gap therebetween; due to the difference between the surface and the bottom of the positive photoresist in process effect, the bottom of the positive photoresist is less sensitive to light and is less likely to be developed after heating, so that the cross section of the gap between the two positive photoresist structures is in the shape of an inverted trapezoid; forming a negative photoresist layer covering the gap and the positive photoresist structure; performing exposure and development on the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structure; and stripping the positive photoresist structure to form a negative photoresist layer with the structure characteristics of a wider top and a narrower bottom. The preparation of the physical partition layer can be realized without developing new materials, and the semiconductor structure can be used as the physical partition layer in a display panel to reduce the low gray scale crosstalk problem in the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0042] Figure 1 A flow chart of a preparation method of a semiconductor structure is provided for the embodiment of the application.

[0043] Figure 2 A flow chart of a preparation process of a positive photoresist layer is provided for the embodiment of the application.

[0044] Figure 3 A flow chart of a preparation process of a negative photoresist layer is provided for the embodiment of the application.

[0045] Figure 4 A flow chart of a preparation process of a positive photoresist structure is provided for the embodiment of the application.

[0046] Figure 5 A flow chart of another preparation method of a semiconductor structure is provided for the embodiment of the application.

[0047] Figure 6 A structure diagram of a semiconductor structure is provided for the embodiment of the application.

[0048] Figure 7 A flow chart of a preparation method of a display panel is provided for the embodiment of the application.

[0049] Figure 8 A structure diagram of a display panel is provided for the embodiment of the application. DETAILED DESCRIPTION

[0050] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0051] To address the low-grayscale crosstalk issue in display panels, a physical barrier layer is required. The barrier effect of this layer depends primarily on its inverted tapered structure, which is currently achieved by developing new materials. Therefore, existing physical barrier layers require the development of new materials to create a tapered structure, resulting in high development costs and hindering widespread adoption.

[0052] Figure 1 A flowchart of a method for preparing a semiconductor structure provided by an embodiment of the present invention is provided. Figure 2 A schematic diagram of a process for preparing a positive photoresist layer according to an embodiment of the present invention is provided. Figure 3 Schematic diagram of the process of preparing a negative photoresist layer provided by an embodiment of the present invention. Figures 1-3 , the preparation method of the semiconductor structure specifically includes the following steps:

[0053] S110 , forming a positive photoresist layer 110 on one side of the substrate 100 .

[0054] Among them, the portion of the positive photoresist layer 110 exposed by light can be removed by the developer, while the unexposed positive photoresist layer 110 will not be removed by the developer. The substrate 100 can be a pixel definition layer, and the positive photoresist layer 110 is formed on one side of the substrate 100 so that the positive photoresist layer 110 can be exposed.

[0055] S120 , exposing and developing the positive photoresist layer 110 to form a plurality of positive photoresist structure groups 111 . The positive photoresist structure group 111 includes two positive photoresist structures 112 , with a gap 113 between the two positive photoresist structures 112 .

[0056] Specifically, the process of exposing the positive photoresist layer 110 can use the exposure plate 310 located above the positive photoresist layer 110 to expose the positive photoresist layer 110, and then use the developing solution to develop the positive photoresist layer 110 after exposure, thereby forming a plurality of positive photoresist structure groups 111 in the positive photoresist layer 110. The unexposed area of the positive photoresist structure group 111 includes two positive photoresist structures 112. Due to the difference in process effect between the surface and the bottom of the positive photoresist layer 110, such as less developing agent or photosensitive agent after heating at the bottom of the positive photoresist layer 110, which makes the bottom of the positive photoresist layer 110 more difficult to develop, and the cross section of the positive photoresist structure 112 is a right trapezoid after baking during the developing process. In addition, the two positive photoresist structures 112 have a gap 113 therebetween, and the cross section of the gap 113 is an inverted trapezoid. The gap 113 region can be covered by a negative photoresist layer 210 in the subsequent process, so that after the positive photoresist structure 112 is stripped, a negative photoresist structure with an inverted trapezoidal cross section is formed in the gap 113 region.

[0057] S130, forming a negative photoresist layer 210 covering the gap 113 and the positive photoresist structure 112.

[0058] The characteristics of the negative photoresist layer 210 are that the part exposed by light will not be removed by the developing solution, and the remaining area not exposed by light will be removed by the developing solution.

[0059] Specifically, the negative photoresist layer 210 covering the gap 113 and the positive photoresist structure 112 is formed on the substrate 100 by a coating process, so as to perform the processes of exposure and development on the negative photoresist layer 210.

[0060] S140, exposing and developing the negative photoresist layer 210 to remove part of the negative photoresist layer 210 above the positive photoresist structure 112.

[0061] Specifically, the process of exposing the negative photoresist layer 210 can use the exposure plate 310 located above the negative photoresist layer 210 to expose the negative photoresist layer 210, and then use the developing solution to develop the negative photoresist layer 210 after exposure, thereby removing part of the negative photoresist layer 210 above the positive photoresist structure 112 by the developing solution, and forming a negative photoresist structure 211 with the structure characteristics of a wider top and a narrower bottom.

[0062] S150, stripping the positive photoresist structure 112.

[0063] Specifically, the negative photoresist structure 211 is cured by a curing furnace, and the positive photoresist structure 112 is removed by a stripping liquid, so that only the negative photoresist structure 211 with the structure characteristics of a wider top and a narrower bottom is formed above the substrate 100, and the substrate 100 and the negative photoresist structure 211 together constitute a prepared semiconductor structure. The negative photoresist structure 211 with the structure characteristics of a wider top and a narrower bottom can be used as a physical isolation layer in a display panel, so as to reduce the gray scale crosstalk problem in the display panel, and the preparation of the physical isolation layer can be realized without developing a new material.

[0064] The embodiment of the present application provides a preparation method of a semiconductor structure, which comprises the following steps: forming a positive photoresist layer on one side of a substrate; performing exposure and development on the positive photoresist layer to form a plurality of positive photoresist structure groups, wherein each positive photoresist structure group comprises two positive photoresist structures, and the two positive photoresist structures have a gap therebetween; due to the difference between the surface and bottom of the positive photoresist, the photosensitive agent of the bottom of the positive photoresist is less after heating, and the development is more difficult, so that the cross section of the gap between the two positive photoresist structures is in the shape of an inverted trapezoid; forming a negative photoresist layer covering the gap and the positive photoresist structure; performing exposure and development on the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structure; and stripping the positive photoresist structure to form a negative photoresist layer with the structure characteristics of a wider top and a narrower bottom. The preparation of the physical isolation layer can be realized without developing a new material, and the semiconductor structure can be used as the physical isolation layer in the display panel, so as to reduce the low gray scale crosstalk problem in the display panel.

[0065] The embodiment of the present application also provides another preparation method of a semiconductor structure, which comprises the following steps: forming a positive photoresist structure by a substrate preparation; and forming a negative photoresist structure on the basis of the positive photoresist structure, and removing the positive photoresist structure to form a semiconductor structure. Figure 4 The preparation flow chart of the positive photoresist structure provided by the embodiment of the present application is shown in the figure, Figure 4 as shown in the figure, which comprises the following steps:

[0066] S210, a uniform positive photoresist layer 110 is formed on the upper surface of the substrate 100 through a coating process.

[0067] The substrate 100 of the embodiment can comprise multiple layers, as shown in the figure. Figure 2 A uniform positive photoresist layer 110 is formed on the upper surface of the substrate 100 through a coating process.

[0068] S220, the exposure plate 310 is placed above the side of the positive photoresist layer 110 away from the substrate 100, and the positive photoresist layer 110 is exposed by the light source above the exposure plate 310.

[0069] Specifically, reference is made toFigure 2 The exposure plate 310 can be a mask plate that can block light. The exposure plate 310 is placed directly above the positive photoresist layer 110 on the side away from the substrate 100, and the light emitted by the light source above the exposure plate 310 vertically irradiates the exposure plate 310, and the positive photoresist layer 110 is exposed by the light source above the exposure plate 310.

[0070] S230, the exposed positive photoresist layer 110 is developed using a developing solution, and the developed positive photoresist layer 110 has a plurality of unexposed areas that form a plurality of positive photoresist structure groups 111, each of which includes two positive photoresist structures 112 with a gap 113 between them; wherein the cross section of the positive photoresist structure 112 is a right trapezoid, and the cross section of the gap 113 is an inverted trapezoid.

[0071] Specifically, referring to Figure 2 The developing solution can remove the exposed positive photoresist layer 110. During the development of the exposed positive photoresist layer 110 using the developing solution, due to the difference in process effect between the surface and the bottom of the positive photoresist layer 110, such as less photosensitive agent and less easy to develop after heating at the bottom, and subsequent post-development heating of the positive photoresist layer 110, the cross section of the positive photoresist structure 112 formed by the plurality of unexposed areas of the developed positive photoresist layer 110 is a right trapezoid, and the cross section of the gap 113 is an inverted trapezoid, and the inverted trapezoid of the cross section of the gap 113 and the right trapezoid of the cross section of the positive photoresist structure 112 are complementary. The cross section of the gap 113 is an inverted trapezoid, which facilitates the covering of the negative photoresist in the gap 113, and is conducive to the formation of the negative photoresist structure in the subsequent step.

[0072] Figure 5 Another preparation flowchart of a semiconductor structure provided by the embodiment of the present application is shown in Figure 5 , which includes:

[0073] S240, a negative photoresist layer 210 covering the gap 113 and the positive photoresist structure 112 is formed on the upper surface of the positive photoresist structure 110 by a coating process.

[0074] Specifically, referring to Figure 3 A negative photoresist is coated on the upper surface of the positive photoresist structure 110 by a coating process to form a negative photoresist layer 210 covering the gap 113 and the positive photoresist structure 112 on the upper surface of the positive photoresist structure 110.

[0075] S250, the exposure plate 130 is placed above the side of the negative photoresist layer 210 away from the substrate 100, and the projection of the light shielding area of the exposure plate 130 on the substrate 100 overlaps the projection of the upper surface of the positive photoresist structure on the substrate 100, and the negative photoresist layer 210 is exposed by the light source above the exposure plate 130.

[0076] Specifically, referring to Figure 3 , the exposure plate 130 is placed above the side of the negative photoresist layer 210 away from the substrate 100, and the projection of the light shielding area of the exposure plate 130 on the substrate 100 overlaps the projection of the upper surface of the positive photoresist structure on the substrate 100, and the negative photoresist layer 210 is exposed by the light source above the exposure plate 130.

[0077] S260, the exposed negative photoresist layer 210 is developed with a developing solution to form a negative photoresist structure 211 in the exposed area of the negative photoresist layer 210; wherein the upper surface of the positive photoresist structure 112 is the surface of the positive photoresist structure 112 away from the substrate 100.

[0078] Specifically, referring to Figure 3 , after exposure, the negative photoresist layer 210 is developed with a developing solution to remove part of the negative photoresist layer 210 above the positive photoresist structure 112, forming a negative photoresist structure 211 with the characteristics of a wider top and a narrower bottom.

[0079] Further, Figure 6 A structure diagram of a semiconductor structure provided by an embodiment of the present application is shown in Figure 6 , the negative photoresist structure 211 includes a first negative photoresist structure 213 and a second negative photoresist structure 212; the first negative photoresist structure 213 includes negative photoresist in the gap 113, and the second negative photoresist structure 212 includes negative photoresist away from the substrate 100; the cross section of the first negative photoresist structure 212 is inverted trapezoidal, and the cross section of the second negative photoresist structure 213 is rectangular.

[0080] Specifically, the negative photoresist structure 211 includes a first negative photoresist structure 213 and a second negative photoresist structure 212, that is, the negative photoresist structure 211 has a structure feature of being wider at the top and narrower at the bottom, and has a reverse taper structure. The blocking effect of the physical blocking layer in the display panel mainly depends on the reverse taper structure of the blocking layer, and the semiconductor structure negative photoresist structure 211 in the embodiment has a reverse taper structure, which can be used as a physical blocking layer in the display panel to reduce the gray scale crosstalk problem in the display panel.

[0081] Further, in the process of removing part of the negative photoresist layer 210 above the positive photoresist structure 112, further comprising:

[0082] Thinning the positive photoresist structure 112.

[0083] Specifically, since the positive photoresist structure 112 exists below the exposed area of the exposed negative photoresist layer 210, part of the positive photoresist structure 112 is exposed, causing part of the positive photoresist structure 112 to be removed by the developing solution, thereby thinning the positive photoresist structure 112, so that the positive photoresist structure 112 is more easily removed in the subsequent step.

[0084] S270, stripping the positive photoresist structure 112.

[0085] Wherein, the positive photoresist has no polymerization effect after heating, the negative photoresist has polymerization effect after heating, and the resin in the negative photoresist is converted into a high molecular material after light curing and heat curing of the negative photoresist after exposure, so it cannot be stripped by the stripping agent; and the positive photoresist has no polymerization and crosslinking, and is still a small molecular resin, so it can be stripped by the stripping agent.

[0086] Specifically, the semiconductor structure including the substrate 100, the negative photoresist structure 211 and the positive photoresist structure 112 is heated and cured, the negative photoresist structure 211 is cured, and the positive photoresist structure 112 is not cured. The positive photoresist structure 112 after heating is stripped by the stripping agent, and the negative photoresist structure 211 is not stripped, forming a semiconductor structure including only the substrate 100 and the negative photoresist structure. The negative photoresist structure 211 has a structure feature of being wider at the top and narrower at the bottom, and can be used as a physical blocking layer in the display panel to reduce the gray scale crosstalk problem in the display panel, without the need to develop new materials to realize the preparation of the physical blocking layer.

[0087] The technical scheme of the embodiment of the application provides a preparation method of a semiconductor structure, forms a negative photoresist layer having a structure feature of being wider at the top and narrower at the bottom, and can be used as a physical blocking layer in a display panel to reduce the low gray scale crosstalk problem in the display panel, without the need to develop new materials to realize the preparation of the physical blocking layer.

[0088] The embodiment of the present application also provides a preparation method of the display panel based on the above-mentioned embodiments, Figure 7 A flow chart of the preparation method of the display panel is shown in the figure, Figure 7 The method comprises the following steps.

[0089] S1, providing a substrate; forming a pixel definition layer on one side of the substrate, wherein the pixel definition layer comprises pixel definition structures and openings between the pixel definition structures.

[0090] S2, forming a positive photoresist layer on the pixel definition structures.

[0091] S3, performing exposure and development on the positive photoresist layer to form a plurality of positive photoresist structure groups, wherein each positive photoresist structure group comprises two positive photoresist structures, and the two positive photoresist structures have a gap therebetween.

[0092] S4, forming a negative photoresist layer covering the gap and the positive photoresist structures.

[0093] S5, performing exposure and development on the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structures.

[0094] S6, peeling off the positive photoresist structures to form a partition structure.

[0095] The size of the surface of the partition structure away from the pixel definition structure is greater than the size of the surface of the partition structure close to the pixel definition structure, that is, the partition structure has the structural characteristics of wider top and narrower bottom, so that the low gray scale crosstalk problem in the display panel in the prior art can be reduced.

[0096] Specifically, in the current display panel, full-color display is usually realized based on a plurality of sub-pixels of different colors, and because the starting gray scale of the sub-pixels of different colors is different, the horizontal crosstalk problem is prone to occur at low gray scale, resulting in poor display effect. The common layer is also above the pixel definition structure, and a part of the common layer on the pixel definition layer is partitioned by the isolation column, so that the horizontal resistance value of the common layer between adjacent sub-pixels is actually increased, so that the horizontal current through the common layer is reduced under the condition that the voltage difference between adjacent sub-pixels is unchanged, and the reduced current cannot meet the requirement of making the adjacent sub-pixels emit light, so that the problems such as color cast can be effectively avoided, and the display effect of the display panel is improved.

[0097] The preparation method of the display panel provided in the embodiment of the present application forms a partition structure on a pixel definition structure, which can improve the crosstalk problem between adjacent sub-pixels in the display panel in the prior art, and can also reduce the low gray scale crosstalk problem in the display panel in the prior art. The preparation method is simple and easy to implement, and has low process cost. The partition structure can be formed by using the photoresist used for preparing the display panel, and the preparation of the partition structure can be implemented without developing a new material.

[0098] The display panel provided in the embodiment of the present application is based on the above-mentioned embodiments, and has the following characteristics. Figure 8 The structure of the display panel provided in the embodiment of the present application is shown in the following figure. Figure 8 As shown in the figure, the display panel comprises:

[0099] a substrate 1, a pixel definition layer 2 located on one side of the substrate 1, the pixel definition layer 2 comprising pixel definition structures 21 and openings 22 between the pixel definition structures 21, and a partition structure 3 located on the side of the pixel definition layer 2 away from the substrate 1 and in contact with the pixel definition structures 21, the material of the partition structure 3 being a negative photoresist.

[0100] Specifically, the pixel definition layer 2 is used to define pixels, and the pixel definition layer 2 comprises pixel definition structures 21 and openings 22 between the pixel definition structures 21, and the anode 4 of the light-emitting device is arranged below the openings 22 between the pixel definition structures 21. The partition structure 3 is located on the side of the pixel definition layer 2 away from the substrate 1 and in contact with the pixel definition structures 21, and the partition structure 3 can be multiple, and the partition structure 3 can be arranged on the pixel definition structures 21 on both sides of the openings 22. In addition, the display panel further comprises a common layer, and the common layer comprises a cathode layer, an electron injection layer and an electron transport layer, etc., and the common layer covers the partition structure 3 and the pixel definition layer 2, and the common layer is partitioned by the partition structure 3 in the forming process. The light-emitting functional layer is further arranged above the anode 4 of the light-emitting device, and the anode 4 of the light-emitting device, the light-emitting functional layer and the cathode layer together constitute a light-emitting device, and the light-emitting functional layer can emit light when the anode 4 of the light-emitting device and the cathode layer are powered. The partition structure 3 partitions a part of the common layer, thereby actually increasing the lateral resistance value of the common layer between the anode 4 of the light-emitting device, and the lateral current of the common layer is reduced, so that the problems such as color mixing can be effectively avoided, and the display effect of the display panel is improved.

[0101] In addition, the substrate 1 can include a base, a buffer layer, a thin film transistor, a gate insulating layer, an interlayer insulating layer, a passivation layer, and the like, the base, the buffer layer, the gate insulating layer, the interlayer insulating layer, and the passivation layer are sequentially stacked, the passivation layer is above the pixel definition layer 2, the thin film transistor includes a source region, a drain region, a channel region, a gate electrode, a source electrode, and a drain electrode, the source region, the drain region, and the channel region are between the gate insulating layer and the buffer layer, the gate electrode is on the interlayer insulating layer, the source electrode and the drain electrode are between the passivation layer and the interlayer insulating layer, the source electrode is connected to the source region through a via hole, and the drain electrode is connected to the drain region through a via hole. Figure 8 As shown in FIG. 1, the substrate 1 further has a source electrode 11 and a drain electrode 12, the source electrode 11 and the drain electrode 12 are electrodes of a thin film transistor in the substrate 1, the anode 4 of the light emitting device is connected to the source electrode 11, and the voltage of the anode 4 of the light emitting device is controlled by the thin film transistor through the source electrode 11, so as to control the light emitting device to emit light.

[0102] The size of the surface of the partition structure 3 away from the pixel definition structure 21 is greater than the size of the surface of the partition structure 3 close to the pixel definition structure 21, that is, the partition structure 3 has the structural feature of being wider at the top and narrower at the bottom, so as to reduce the low gray scale crosstalk problem in the display panel in the prior art.

[0103] The display panel provided by the embodiment of the present application has the partition structure on the pixel definition structure, the partition structure is in contact with the pixel definition structure, and the material of the partition structure is a negative photoresist. The partition structure in the display panel can improve the crosstalk problem between adjacent sub-pixels in the display panel in the prior art, and can also reduce the low gray scale crosstalk problem in the display panel in the prior art.

[0104] Optionally, continuing to refer to Figure 8 , the display panel further includes: an isolation column 5 located above the pixel definition structure 21; and the partial partition structure 3 is located between the isolation column 5 and the opening 22, and the height of the isolation column 5 is greater than the height of the partition structure 3.

[0105] Specifically, the isolation column 5 is located above the pixel definition structure 21, and the partial partition structure 3 is located between the isolation column 4 and the opening 22, that is, the partial partition structure 3 is located on one side of the opening 22 close to the isolation column 5, and the partial partition structure 3 is located on the other side of the opening 22. The height of the isolation column 5 is greater than the height of the partition structure 3. The isolation column 5 is used to support a mask in a vapor deposition process.

[0106] Note that the above merely describes preferred embodiments of the present application and the principles of the technology applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and that various obvious changes, modifications and substitutions can be made thereto without departing from the scope of the present application. Therefore, although the present application has been described in detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the claims.

Claims

1. A method of fabricating a semiconductor structure, characterized by, The method comprises the following steps: forming a positive photoresist layer on one side of a substrate; exposing and developing the positive photoresist layer to form a plurality of positive photoresist structure groups, each of which comprises two positive photoresist structures with a gap between the two positive photoresist structures; forming a negative photoresist layer covering the gap and the positive photoresist structures; exposing and developing the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structures; stripping the positive photoresist structures.

2. The method of producing a semiconductor structure according to claim 1, characterized in that, The step of forming a positive photoresist layer on one side of a substrate comprises: forming a uniform positive photoresist layer on the upper surface of the substrate by a coating process.

3. The method of producing a semiconductor structure according to claim 1, characterized in that, The step of exposing and developing the positive photoresist layer to form a plurality of positive photoresist structure groups, each of which comprises two positive photoresist structures with a gap between the two positive photoresist structures, comprises: placing the exposure plate above the side of the positive photoresist layer away from the substrate, and exposing the positive photoresist layer by a light source above the exposure plate; developing the exposed positive photoresist layer with a developing solution, and forming a plurality of positive photoresist structure groups in the unexposed regions of the developed positive photoresist layer, each of which comprises two positive photoresist structures with a gap between the two positive photoresist structures; wherein the cross section of the positive photoresist structure is a positive trapezoid, and the cross section of the gap is an inverted trapezoid.

4. The method of producing a semiconductor structure according to claim 1, characterized in that, The step of forming a negative photoresist layer covering the gap and the positive photoresist structures comprises: forming a negative photoresist layer covering the gap and the positive photoresist structures on the upper surface of the positive photoresist structures by a coating process.

5. The method of producing a semiconductor structure according to claim 1, characterized in that, The step of exposing and developing the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structures comprises: placing the exposure plate above the side of the negative photoresist layer away from the substrate, and the projection of the light-shielding region of the exposure plate on the substrate overlaps with the projection of the upper surface of the positive photoresist structures on the substrate, and exposing the negative photoresist layer by a light source above the exposure plate; developing the exposed negative photoresist layer with a developing solution to form a negative photoresist structure in the exposed region of the negative photoresist layer; wherein the upper surface of the positive photoresist structure is the surface of the positive photoresist structure away from the substrate.

6. The method of producing a semiconductor structure according to claim 5, characterized in that, The negative photoresist structure comprises a first negative photoresist structure and a second negative photoresist structure; the first negative photoresist structure comprises negative photoresist in the gap, and the second negative photoresist structure comprises negative photoresist on the side of the gap away from the substrate; the cross section of the first negative photoresist structure is an inverted trapezoid, and the cross section of the second negative photoresist structure is a rectangle.

7. The method of producing a semiconductor structure according to claim 1, characterized in that, The step of removing part of the negative photoresist layer above the positive photoresist structures further comprises: thinning the positive photoresist structures.

8. A method for manufacturing a display panel, characterized by, The method comprises the following steps: providing a substrate; Forming a pixel definition layer on one side of the substrate, the pixel definition layer comprising pixel definition structures and openings between the pixel definition structures; Forming a positive photoresist layer on the pixel definition structures; Exposing and developing the positive photoresist layer to form a plurality of positive photoresist structure groups, each of the positive photoresist structure groups comprising two positive photoresist structures with a gap between the two positive photoresist structures; Forming a negative photoresist layer covering the gap and the positive photoresist structures; Exposing and developing the negative photoresist layer to remove part of the negative photoresist layer above the positive photoresist structures; Peeling off the positive photoresist structures to form partition structures.

9. A display panel, characterized by, Formed based on the method for manufacturing the display panel of claim 8, the display panel comprising: a substrate; a pixel definition layer on one side of the substrate, the pixel definition layer comprising pixel definition structures and openings between the pixel definition structures; partition structures on the side of the pixel definition layer away from the substrate and in contact with the pixel definition structures, the partition structures being made of negative photoresist.

10. The display panel of claim 9, wherein, Further comprising: isolation columns above the pixel definition structures; part of the partition structures being between the isolation columns and the openings, the height of the isolation columns being greater than the height of the partition structures.

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