Arc resistant electrostatic chuck and arc reducing plug for electrostatic chuck

Abstract

An arc resistant electrostatic chuck includes a substrate including: a first gas supply hole for supplying a heat transfer gas through the substrate; and a first cavity disposed on the first surface of the substrate and in fluid communication with the first air supply hole. A top ceramic layer is disposed over the substrate and includes a second cavity on a first surface thereof. A bonding layer is configured to bond the substrate to the top ceramic layer and includes a pressure relief region. A first plug is disposed in the first cavity of the substrate. The top ceramic layer includes N air supply holes disposed over the first plug and includes an outlet within the second cavity, where N is an integer greater than 20. Inlets of the N air supply holes are located in the pressure relief area.

Description

Cross Reference to Related Applications

[0001] This application claims priority to U.S. Provisional Application No. 63 / 449,983, filed March 4, 2023. The entire disclosure of the above application is incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly, to an arc resistant electrostatic chuck. BACKGROUND

[0003] The background description provided here is for the purposes of generally presenting the context of the disclosure. The work of the presently designated inventors, to the extent the work is described in this background section, as well as aspects of the description that can not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the application.

[0004] Substrate processing systems are used to process substrates such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. During processing, a substrate is arranged on a substrate support (e.g., an electrostatic chuck (ESC)) in a processing chamber. A gas delivery system supplies a mixture of gases or vapors to the processing chamber to process the substrate. A plasma can be used to ignite the gas mixture in the processing chamber to enhance chemical reactions. SUMMARY

[0005] An arc resistant electrostatic chuck includes a base plate comprising: a first gas supply hole for supplying a heat transfer gas through the base plate; and a first cavity disposed on a first surface of the base plate and in fluid communication with the first gas supply hole. A top ceramic layer is disposed above the base plate and includes a second cavity on a first surface thereof. A bonding layer is configured to bond the base plate to the top ceramic layer and includes a pressure relief zone. A first plug is disposed in the first cavity of the base plate. The top ceramic layer includes N gas supply holes disposed above the first plug and includes an outlet within the second cavity, where N is an integer greater than 20. Inlets of the N gas supply holes are located in the pressure relief zone.

[0006] In other features, N is in a range of 300 to 1200. A diameter of the N gas supply holes is in a range of 3 pm to 30 pm. The N gas supply holes are laser drilled. The first plug includes a porous plug. A porosity of the porous plug is in a range of 30% to 50% and the porous plug includes open pores.

[0007] In other features, the first plug includes a multi-lumen plug including P gas holes positioned at a predetermined angle with respect to a vertical direction, where P is an integer greater than 20. The predetermined angle is in a range between 0.5° to 5°. P is in a range greater than 100 and less than 1000. The first multi-lumen plug includes M gas holes and is disposed in a third cavity on a second surface of the top ceramic layer and adjacent to the bonding layer, where M is an integer greater than 20.

[0008] In other features, M is greater than 100. The M gas holes have a diameter in a range of 3 μιη to 10 μιη.

[0009] In other features, the first multi-lumen plug further includes a solid core. The M gas holes of the first multi-lumen plug pass vertically through the first plug and are radially outside of the solid core. An outer diameter of the solid core is greater than a diameter in which the N gas holes are located. The first plug includes a porous plug. The porous plug has a porosity in a range of 30% to 50% and includes open pores. The first plug includes a second multi-lumen plug including a plurality of gas holes positioned at a predetermined angle with respect to a vertical direction. The predetermined angle is in a range between 0.5° to 5°. The first plug includes a second multi-lumen plug including T gas holes passing vertically through the second multi-lumen plug, where T is an integer greater than 20. The second multi-lumen plug further includes a solid core. The T gas holes are radially disposed outside of the solid core.

[0010] In other features, the first plug includes a solid plug including a gas hole passing vertically through the solid plug. The gas hole has a diameter in a range of 100 μιη to 500 μιη. The solid plug includes a body having a "T" shaped cross-section and a flange extending outwardly from an upper surface of the body.

[0011] In other features, the second cavity in the top ceramic layer includes a raised portion and an annular gas chamber surrounding the raised portion. The N gas holes have outlets disposed on the raised portion. The solid plug includes a "T" shaped body including an annular gas channel extending from a bottom surface into the "T" shaped body and P gas holes extending from the annular gas channel to a top surface of the "T" shaped body, where P is greater than 10.

[0012] In other features, the first plug includes a first plug portion having a "T" shaped outer cross-section, a cavity extending from a first surface, and a second plug portion having a "T" shaped body inverted and inserted into the cavity. The second plug portion includes a gas feed hole extending vertically through the second plug portion, and the first plug portion includes P gas feed holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10. The P gas feed holes have a diameter in a range of 20 μιη to 150 μιη. The P gas feed holes are circularly arranged, and P is less than 500.

[0013] In other features, a plenum is defined between an upper surface of the second plug portion and the cavity of the first plug portion. A bottom of the first multi-cavity plug extends vertically to the pressure relief zone. The first plug includes a body having a "T" shaped cross-section, a plenum extending horizontally within the body, and a gas channel extending from a bottom surface of the body to a location spaced apart from the plenum. P gas feed holes fluidically connect the gas channel to the plenum. Q gas feed holes fluidically connect the plenum to a top surface of the body, where P and Q are integers greater than 1.

[0014] In other features, the Q gas feed holes include 32 to 150 holes, and have a diameter in a range of 30 μιη to 80 μιη. The P gas feed holes include 1 to 20 holes, and have a diameter in a range of 100 μιη to 200 μιη. A lower portion of the first plug tapers inwardly away from the first cavity in the substrate.

[0015] An arc resistant electrostatic chuck includes a substrate including a first gas feed hole for supplying a heat transfer gas, and a first cavity disposed on a surface of the substrate and in fluid communication with the first gas feed hole. A top ceramic layer is disposed above the substrate and includes a second cavity disposed on a first side of the top ceramic layer, an annular protrusion extending to the first cavity and defining a gas feed hole, a plenum disposed below the annular protrusion, and a third cavity disposed below the plenum. A bonding layer is configured to bond the substrate with the top ceramic layer and includes a pressure relief zone adjacent to the first cavity. A first plug is disposed in the first cavity of the substrate. A first multi-cavity plug is disposed in the third cavity in the top ceramic layer and includes N gas feed holes, where N is greater than 20.

[0016] In other features, N is in a range of 100 to 900. The N gas feed holes have a diameter in a range of 3 pm to 10 pm. The N gas feed holes are laser drilled. The first plug includes a porous plug. The porous plug has a porosity in a range of 30% to 50% and includes open pores. The first plug includes a second multi-cavity plug having P gas feed holes, where P is an integer greater than 20. The second multi-cavity plug includes a solid core, and the P gas feed holes are arranged radially outside the solid core. P is an integer in a range from 100 to less than 1000. The P gas feed holes have a diameter in a range of 3 pm to 10 pm. The P gas feed holes of the second multi-cavity plug are positioned at a predetermined angle relative to a vertical direction. The predetermined angle is in a range between 0.5° to 5°.

[0017] In other features, the first multi-cavity plug includes a solid core. The N gas feed holes are located radially outside the solid core. An outer diameter of the solid core is greater than a first diameter of the gas feed holes. The first multi-cavity plug includes a solid core, and wherein the second multi-cavity plug includes a solid core. The first plug includes a solid plug having a gas feed hole extending vertically through the solid plug. The solid plug has a "T" shaped cross-section and includes a flange extending outwardly from a body of the solid plug.

[0018] In other features, the first plug includes a "T" shaped body including an annular gas channel extending from a bottom surface to the "T" shaped body. A gas feed hole extends from the annular gas channel to a top surface of the "T" shaped body.

[0019] In other features, the first plug includes a first plug portion having a "T" shaped outer cross-section and a cavity extending into the first plug portion. A second plug portion has a "T" shaped body inserted into the cavity of the first plug portion. The second plug portion includes one or more gas feed holes extending vertically through the second plug portion. The first plug portion includes one or more gas feed holes extending from the cavity to a top surface of the first plug portion.

[0020] In other features, a bottom of the first multi-cavity plug extends to the pressure relief zone. The first plug includes a body, a plenum extending horizontally within the body, a gas channel extending from a bottom surface of the body to a location spaced apart from the plenum, P gas feed holes fluidically connecting the gas channel to the plenum, and Q gas feed holes fluidically connecting the plenum to a top surface of the body, where P and Q are integers greater than 1.

[0021] In other features, the Q gas feed holes are located radially outward of a radially outer edge of the first multi-cavity plug. The Q gas feed holes include 32 to 150 holes having a diameter in a range of 30 pm to 80 pm. The P gas feed holes include 1 to 20 holes having a diameter in a range of 100 pm to 200 pm. A lower portion of the first plug tapers inwardly from the first cavity in the substrate.

[0022] An arc resistant electrostatic chuck includes a substrate including a first gas feed hole for supplying a heat transfer gas. A first cavity is disposed on a surface of the substrate and is in fluid communication with the first gas feed hole. A top ceramic layer is disposed above the substrate and includes a second cavity disposed on a first side of the top ceramic layer. A gas feed hole fluidically connects the second cavity to a bottom surface of the top ceramic layer. A bonding layer is configured to bond the substrate to the top ceramic layer and includes a pressure relief region proximate the first cavity. A multi-cavity plug is disposed in the first cavity and includes a solid core and T gas feed holes disposed about the solid core, where T is greater than 20.

[0023] In other features, T is an integer in a range from 100 to less than 1000. The T gas feed holes have a diameter in a range of 3 pm to 10 pm.

[0024] An arc resistant electrostatic chuck includes a substrate including a first gas feed hole for supplying a heat transfer gas. A first cavity is disposed on a surface of the substrate and is in fluid communication with the first gas feed hole. A top ceramic layer is disposed above the substrate and includes a second cavity disposed on a first side of the top ceramic layer. A gas feed hole fluidically connects the second cavity to a second surface of the top ceramic layer. A bonding layer is configured to bond the substrate to the top ceramic layer and includes a pressure relief region proximate the first cavity. A plug is disposed in the first cavity and includes a body, a gas chamber extending horizontally within the body, a gas passage extending from a bottom surface of the body to a location spaced apart from the gas chamber, P gas feed holes fluidically connecting the gas passage to the gas chamber, and Q gas feed holes fluidically connecting the gas chamber to a top surface of the body, where P and Q are integers greater than 1.

[0025] In other features, the Q gas feed holes are located radially outward of the P gas feed holes. The Q gas feed holes include 32 to 150 holes having a diameter in a range of 30 pm to 80 pm. The P gas feed holes include 1 to 20 holes and have a diameter in a range of 100 pm to 200 pm. A lower portion of the first plug tapers inwardly away from the first cavity in the substrate.

[0026] An arc resistant electrostatic chuck includes a base plate including first gas supply holes for supplying heat transfer gas and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes. A top ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the top ceramic layer. Gas supply holes fluidically connect the second cavity to a bottom surface of the top ceramic layer. A bonding layer is configured to bond the base plate to the top ceramic layer and includes a pressure relief zone adjacent to the first cavity. A first plug including a "T" shaped body includes an annular gas channel extending from a bottom surface to the "T" shaped body and P gas supply holes extending from the annular gas channel to a top surface of the "T" shaped body, where P is an integer greater than 10.

[0027] In other features, P is an integer in a range from 10 to less than 1000. The P gas supply holes have a diameter in a range from 30 pm to 150 pm.

[0028] An arc resistant electrostatic chuck includes a base plate including first gas supply holes for supplying heat transfer gas and a first cavity disposed on a surface of the base plate and in fluid communication with the first gas supply holes. A top ceramic layer is disposed above the base plate and includes a second cavity disposed on a first side of the top ceramic layer. Gas supply holes fluidically connect the second cavity to a bottom surface of the top ceramic layer. A bonding layer is configured to bond the base plate to the top ceramic layer and includes a pressure relief zone adjacent to the first cavity. A first plug includes a first plug portion having a "T" shaped outer cross section and a cavity extending upwardly from a bottom surface thereof. A second plug portion has a "T" shaped body inserted into the cavity of the first plug portion. The second plug portion includes one or more gas supply holes extending vertically through the second plug portion. The first plug portion includes P gas supply holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10.

[0029] In other features, P is an integer in a range from 10 to less than 1000. The P gas supply holes have a diameter in a range from 30 pm to 150 pm. The first plug portion and the second plug portion are made of ceramic.

[0030] An arc reduction plug for heat transfer gas holes in a base plate of an electrostatic chuck includes a body having a "T" shaped cross section including a flange. An annular gas channel extends from a first surface of the body distal from the flange. P gas supply holes extend from the annular gas channel to a second surface of the body adjacent to the flange. P is an integer in a range from 10 to less than 1000. The P gas supply holes have a diameter in a range from 30 pm to 150 pm. The body is made of ceramic.

[0031] An arc-reducing plug for a heat transfer air hole in an electrostatic chuck baseplate includes a first plug portion having a T-shaped outer cross-section and a cavity extending upward from a first surface thereof. A second plug portion having an inverted T-shaped cross-section is inserted into the cavity of the first plug portion. The second plug portion includes one or more air supply holes extending vertically through the second plug portion. The first plug portion includes P air supply holes extending from the cavity to a top surface thereof. P is an integer ranging from 10 to less than 1000.

[0032] In other features, 76. The arc-reducing plug of claim 75, wherein the diameter of the P gas supply holes is in the range of 30 μm to 150 μm. The first plug portion and the second plug portion are made of ceramic.

[0033] An arc-reducing plug for a heat transfer air hole of an electrostatic chuck comprises: a main body; and a gas chamber extending horizontally within the main body. A gas channel extends from the bottom surface of the main body to a position spaced apart from the gas chamber. P gas supply holes fluidically connect the gas channel to the gas chamber. Q gas supply holes fluidically connect the gas chamber to the top surface of the main body, where P and Q are integers greater than 1.

[0034] In other features, the Q air supply holes are located radially outward from the P air supply holes. The Q air supply holes include 32 to 150 holes, each having a diameter ranging from 30 μm to 80 μm. The P air supply holes include 1 to 20 holes, each having a diameter ranging from 100 μm to 200 μm. The lower portion of the first plug tapers inwardly.

[0035] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0037] Figure 1 is a functional block diagram of an example of a substrate processing system including an arc-resistant electrostatic chuck (ESC) according to the present disclosure;

[0038] Figure 2 is a partial side cross-sectional view illustrating an example of an arc resistant ESC according to the present disclosure;

[0039] Figures 3 to 9A is a partial side cross-sectional view illustrating another example of an arc-resistant ESC according to the present disclosure;

[0040] Figure 9B and 9C is a partial side sectional view illustrating an example of a top ceramic layer according to the present disclosure;

[0041] Figure 10 and 11 is a partial side sectional view illustrating an additional example of an arc resistant ESC according to the present disclosure;

[0042] Figures 12 to 14 is a partial side sectional view illustrating an example of a plug according to the present disclosure; and

[0043] Figure 15 and 16 is a partial side sectional view illustrating an additional example of an arc resistant ESC according to the present disclosure.

[0044] In the drawings, reference numerals can be repeated among the figures for like and / or identical elements. DETAILED DESCRIPTION

[0045] The ESC includes a base plate, a top ceramic layer, and a bonding layer that attaches the top ceramic layer to the base plate. The base plate can include thermal cooling channels to receive a cooling fluid to control the temperature of the ESC and the substrate during processing. The top ceramic layer or plate can contain a resistive heater to control the temperature of the substrate.

[0046] A heat transfer gas, such as helium (He), can be supplied to the backside of the substrate through a plurality of gas supply holes in the ESC to cool the substrate. For low pressure applications, a single vertical straight hole in the top ceramic layer and a ceramic sleeve disposed on the base plate are used to prevent direct line of sight between the plasma and the exposed metal surface, thereby reducing the risk of arcing. For medium-low pressure applications, the ceramic sleeve is replaced with a porous plug, which can provide a higher pressure threshold compared to using a ceramic sleeve. For medium pressure applications, in addition to the ceramic sleeve in the base plate, a porous plug is disposed in the top ceramic layer to reduce arcing.

[0047] While these solutions are suitable for low and medium pressure applications (e.g., < 10 kW), certain semiconductor manufacturing processes use very high radio frequency power (e.g., > 10 kW) to generate plasma. The increase in radio frequency power results in a corresponding increase in the radio frequency current and total voltage applied to the ESC. Certain plasma etching processes can require a much lower radio frequency frequency (e.g., 2 MHz, 400 kHz, or lower) than previously used frequencies (e.g., 13.6 MHz). The low radio frequency frequency results in an additional increase in the radio frequency voltage applied across the top ceramic layer of the ESC.

[0048] Applying a high radio frequency voltage on the top ceramic layer of the ESC can cause a discharge or arc between the substrate and the base plate, and / or ignite the heat transfer gas (e.g., helium) in the gas holes. Arcing in the ESC typically results in catastrophic damage to the chamber components and the substrate, and can damage other chamber components. In addition, the manufacturing process needs to be interrupted when an arc occurs.

[0049] When the heat transfer gas ignites, the damage to the ESC can be a catastrophic event or a slow developing damage. The slow developing damage can affect multiple substrates being processed, and the component damage is typically not detected until very late. In both cases, the ESC failure results in significant loss of substrate production.

[0050] The present disclosure relates to arc resistant ESCs that can reduce arcing and / or ignition of heat transfer gas in substrate processing systems using plasma at high radio frequency power levels (» 10 kW (e.g., > 50 kW)). In some examples, the arc resistant ESCs include various combinations of features, such as a top ceramic layer that includes a plurality of gas holes arranged above the heat transfer gas holes in the base plate, a porous plug, a microcavity plug, a microcavity plug with a solid core, a slanted microcavity plug, a solid sleeve, a solid sleeve with an internal gas chamber, and / or one or more other structures to reduce arcing and heat transfer gas ignition.

[0051] Reference is now made to Figure 1 FIG. 1 shows an example of a substrate processing system 10 that includes an arc resistant ESC. In the following examples, the substrate processing system 10 uses capacitively coupled plasma (CCP) for etching. While CCP is shown, the arc resistant ESC can be used for other plasma based processes. For example, the plasma can be generated by inductively coupled plasma (ICP), microwave plasma, remote plasma, etc.

[0052] The substrate processing system 10 includes a processing chamber 11 that encloses other components of the substrate processing system 10 and houses a radio frequency plasma. The substrate processing system 10 includes an upper electrode 12 and an arc resistant ESC 14 that includes a lower electrode 16. A substrate 18 is disposed on the arc resistant ESC 14 and between the upper electrode 12 and the lower electrode 16.

[0053] By way of example only, the upper electrode 12 can include a showerhead 20 for introducing and distributing process gas. Alternatively, the upper electrode 104 can include a conductive plate, and process gas can be introduced using a jet or other device. The base plate of the ESC 14 serves as the lower electrode 16.

[0054] The radio frequency generating system 24 generates and outputs a radio frequency voltage to one of the upper electrode and the lower electrode. The other of the upper electrode and the lower electrode can be direct current grounded, alternating current grounded, or floating. By way of example only, the radio frequency generating system 24 can include a radio frequency voltage generator 26 that generates a radio frequency voltage that is fed to the upper electrode 12 or the lower electrode 16 through a matching and distribution network 28.

[0055] Figure 1 An example of a gas delivery system 30 is shown. The gas delivery system 30 includes one or more gas sources 32-1, 32-2,... and 32-N (collectively, gas sources 32), where N is an integer greater than zero. The gas sources supply one or more gas mixtures, inert gases, purge gases, etc. The gas sources 32 are connected to a manifold 40 through valves 34-1, 34-2,... and 34-N (collectively, valves 34) and mass flow controllers 36-1, 36-2,... and 36-N (collectively, mass flow controllers 36). The output of the manifold 40 is delivered to the processing chamber 11. By way of example only, the output of the manifold 40 is delivered to the showerhead 20.

[0056] A heater 42 can be connected to a heating coil (not shown) disposed in the arc resistant ESC 14 to heat the arc resistant ESC 14. The heater 42 can be used to control the temperature of the arc resistant ESC 14 and the substrate 18. A valve 50 and a pump 52 can be used to evacuate reactants from the processing chamber 11. A controller 60 can be used to control various components of the substrate processing system 10. By way of example only, the controller 60 can be used to control the flow of process gases, carrier gases, and precursor gases, the excitation and quenching of plasma, the removal of reactants, the monitoring of chamber parameters, etc. A heat transfer gas source 70 and a valve 72 are configured to provide heat transfer gas to the backside of the substrate 18 through the arc resistant ESC 14, as will be further described below.

[0057] Reference is now made to Figure 2 The arc resistant ESC 100, in accordance with the present disclosure, includes a base plate 120 having a plurality of vertical gas feed holes 126 for delivering heat transfer gas to the backside of a substrate. For clarity, the following description will be described with respect to one vertical gas feed hole 126 for various components used to reduce arcing and ignition of heat transfer gas.

[0058] The base plate 120 includes a cavity 130 disposed proximate to the upper surface of the base plate 120. The vertical gas feed hole 126 extends from the bottom surface of the base plate 120 to the cavity 130. A porous plug 132 is disposed within the cavity 130. In some examples, the porous plug 132 is made of ceramic, such as alumina. In some examples, the porosity of the porous plug 132 ranges from 30% to 50% and has open pores. In some examples, the cavity 130 and the porous plug 132 have a cylindrical shape.

[0059] A bonding layer 136 is disposed on the top surface of substrate 120 to bond top ceramic layer 142 to substrate 120. In some examples, top ceramic layer 142 has a thickness ranging from 0.5 mm to 1.5 mm. In some examples, bonding layer 136 has a thickness ranging from 0.1 mm to 1 mm. Bonding layer 136 includes a pressure relief region 140 for allowing heat transfer gas to pass through bonding layer 136. Pressure relief region 140 defines a gas chamber between top ceramic layer 142 and the top surface of substrate 120.

[0060] The top ceramic layer 142 includes a cavity 144 disposed on its top surface. The cavity 144 is located above the vertical air supply hole 126. N air supply holes 148 extend vertically through the top ceramic layer 142 above the porous plug 132. In some examples, N is greater than 20. In some examples, N is in a range of 300 to 1200. In some examples, the N air supply holes 148 are drilled using a laser or other drilling equipment. In some examples, the N air supply holes 148 have a first diameter in a range of 3 μm to 30 μm. In some examples, the thickness of the top ceramic layer 142 is in a range of 0.5 mm to 1 mm. In some examples, the N air supply holes 148 are parallel to each other and to the axial direction.

[0061] In some examples, N air supply holes 148 are located within a second diameter that is smaller than a third diameter of porous plug 132 and / or a fourth diameter of pressure relief zone 140. In some examples, the third diameter of porous plug 132 is greater than the fourth diameter of pressure relief zone 140.

[0062] Now refer to Figure 3 , shows another example of an arc resistant ESC 150 similar to the arc resistant ESC 100. An inclined multi-cavity plug 154 is used instead of Figure 2 In some examples, the tilted multi-cavity plug 154 includes gas supply holes 156 that are parallel to each other but offset from the vertical by a predetermined angle. In some examples, the predetermined angle is determined based on the diameter of the gas supply holes 156 and the vertical height of the tilted multi-cavity plug 154 and is selected to prevent direct line of sight. In some examples, the predetermined angle is in the range of 0.5° to 10° (e.g., 0.5° to 5°). In some examples, the diameter of the gas supply holes 156 is in the range of 3 μm to 40 μm. The tilted holes in the tilted multi-cavity plug 154 can prevent direct line of sight through the multi-cavity plug 210 to the substrate 120.

[0063] In some examples, the angled multi-cavity plug 154 is initially fabricated with the gas feed holes 156 extending vertically. The angled multi-cavity plug 154 is cut at a predetermined angle relative to a lateral direction of the direction in which the gas feed holes 156 extend. A fill material 158 (e.g., a paste, a cement, or other chemically resistant and / or plasma resistant material) can be used to fill the cavities around the sides of the angled multi-cavity plug 154.

[0064] Referring now to Figure 4 , another example of an arc resistant ESC 200 is shown. In this example, a multi-hole plug 132 is disposed in the cavity 130 of the base plate 120. The top ceramic layer 142 includes a cavity 208 disposed on a bottom surface thereof. The cavity 208 is vertically aligned with the vertical gas feed holes 126 and the multi-hole plug 132.

[0065] A multi-cavity plug 210 is disposed in the cavity 208, which includes a body and a plurality of gas feed holes 212 that are parallel to each other and that extend through the body in a vertical direction. In some examples, a bottom of the multi-cavity plug 210 is coplanar with the bottom surface of the top ceramic layer 142. In some examples, the body of the multi-cavity plug 210 is fabricated from ceramic (e.g., alumina). In some examples, the plurality of gas feed holes 212 includes greater than or equal to 100 and less than or equal to 1000 holes. In some examples, a diameter of the plurality of gas feed holes 212 is in a range of 3 pm to 10 pm.

[0066] The top ceramic layer 142 includes a plenum 214 above the multi-cavity plug 210 (and the cavity 208). An annular protrusion 218 extends above the plenum 214 and defines a gas feed hole 219. The cavity 144 is above the annular protrusion 218 and the gas feed hole 219. In some examples, a diameter of the plenum 214 is less than a diameter of the multi-cavity plug 210. In some examples, the gas feed hole 219 is smaller than the diameter of the plenum 214.

[0067] Referring now to Figure 5 , another example of an arc resistant ESC 230 is shown, which is similar to the arc resistant ESC 200 in Figure 4 . In this example, the multi-cavity plug 210 further includes a solid core 232 (e.g., which does not have gas feed holes) that is concentrically disposed with the multi-cavity plug 210. The gas feed holes are arranged around the solid core 232. In some examples, a diameter of the solid core is in a range of 0.8 mm to 1.5 mm. In some examples, the diameter of the solid core 232 is greater than the diameter of the gas feed hole 219 and less than the diameter of the plenum 214. In some examples, a diameter of the gas feed hole 219 is in a range of 0.1 mm to 0.5 mm. In some examples, the diameter of the gas feed hole 219 is in a range of 0.2 mm to 0.3 mm.

[0068] Referring now to Figures 6A to 6D, other examples of arc-resistant ESCs are shown. In Figure 6A , the arc-resistant ESC 250 includes a multi-lumen plug 210 disposed in the top ceramic layer 142 and a multi-lumen plug 252 disposed in the cavity 130 of the base plate 120. In this example, the multi-lumen plug 252 includes axially / vertically aligned gas feed holes 254. In some examples, a bottom surface of the multi-lumen plug 252 is spaced apart from a bottom surface of the cavity 130 to define a gas chamber 254.

[0069] In Figure 6B , the arc-resistant ESC 260 is similar to the arc-resistant ESC 250 in Figure 6A . However, the multi-lumen plug 210 in the cavity 208 of the top ceramic layer 142 further includes a solid core 232. In Figure 6C , the arc-resistant ESC 270 is similar to the arc-resistant ESC 250 in Figure 6A . However, the multi-lumen plug 210 does not include a solid core 232, and the multi-lumen plug 252 includes a solid core 274. In some examples, the solid core 274 of the multi-lumen plug 252 has a diameter that is greater than an inner diameter of the annular protrusion 218 and less than a diameter of the multi-lumen plug 252.

[0070] In Figure 6D , the arc-resistant ESC 280 is similar to the arc-resistant ESC 250 in Figure 6A . However, the multi-lumen plug 210 further includes a solid core 232, and the multi-lumen plug 252 further includes a solid core 274.

[0071] Referring now to Figure 7 , the arc-resistant ESC 300 includes a multi-hole plug 132 disposed within the cavity 130 in the base plate 120. The top ceramic layer 142 includes a multi-lumen plug 210 disposed within the cavity 208 on the bottom surface. Rather than having the annular protrusion 218 disposed above the cavity 214 as in Figure 6A , the top ceramic layer 142 includes a plurality of gas feed holes 310 leading from the cavity 144 to the gas chamber 214.

[0072] In some examples, the plurality of gas feed holes 310 includes 2 to 50 holes having a diameter in a range of 0.02 mm to 0.1 mm. In some examples, the plurality of gas feed holes 310 are aligned in parallel along an axial / vertical direction. In some examples, the plurality of gas feed holes 310 are made using a laser or other drilling equipment. In some examples, the plurality of gas feed holes 310 are aligned within an outer diameter that is less than or equal to a diameter of the solid core 232 disposed in the multi-lumen plug 210 located below.

[0073] Referring now to Figures 8A to 8D , various examples of arc-resistant ESCs are shown in Figure 7The illustrated arc-resistant ESC 300 is similar. In Figure 8A In the illustrated arc-resistant ESC 320, Figure 7 The multi-bore plug 132 in is replaced by a multi-lumen plug 252. In Figure 8B In the illustrated arc-resistant ESC 340, Figure 7 The multi-bore plug 132 in is replaced by a multi-lumen plug 252 with a solid core 274. In Figure 8C In, the arc-resistant ESC 350 includes a plurality of gas feed holes 310 extending from the cavity 144 to the plenum 214, as described above. A multi-lumen plug 210 is disposed in the cavity 208, while an angled multi-lumen plug 154 is disposed in the cavity 130. It will be appreciated that the multi-lumen plug 210 can also include a solid core 232 as Figure 8D illustrated.

[0074] Referring now to Figures 9A to 9C , another arc-resistant ESC 370 is shown. The top ceramic layer 142 includes a cavity 144. In Figure 9A A plurality of gas feed holes 310 are disposed in the bottom surface of the cavity 144. A plenum 214 is disposed below the plurality of gas feed holes 310. A multi-lumen plug 210 with a solid core 232 is disposed in the cavity 208 of the top ceramic layer 142 and below the plenum 214.

[0075] A sleeve 374 is disposed in the cavity 130 and includes one or more gas feed holes 376 extending vertically through the sleeve 374. In some examples, the sleeve 374 is solid and made of ceramic. In some examples, the one or more gas feed holes 376 are located below and between the center of the sleeve 374 and the radially outer edge of the solid core 232. In some examples, the one or more gas feed holes 376 have a diameter in the range of 100 pm to 500 pm.

[0076] In some examples, the cavity 130 includes an upper cavity portion 378 that extends radially outward near the upper surface of the base plate 120. In some examples, the sleeve 374 has a "T" shaped cross-section and includes a flange 380 that is housed in the upper cavity portion 378. The flange 380 provides better protection as the upper corner of the upper cavity portion 378 is moved radially outward relative to the heat transfer gas flow.

[0077] The solid core 232 of the multi-cavity plug 210 in the top ceramic layer 142 provides sufficient shielding to prevent direct line of sight to one or more gas supply holes 376 in the sleeve 374 located below. In some examples, the multi-cavity plug 210 extends below the bottom surface of the top ceramic layer 142. In some examples, the clearance from the bottom of the multi-cavity plug to the top surface of the sleeve is greater than or equal to 20 μm to 100 μm and less than or equal to 0.5 mm. Minimizing the clearance to a lower value within this range can enhance arc and / or ignition protection. The flange 380 of the sleeve 374 can be used to provide additional protection by preventing arcing from affecting the substrate 120.

[0078] exist Figure 9B , a substrate 382 is shown disposed on the top ceramic layer 142. The upper surface of the top ceramic layer 142 (located above the gas chamber 214) may include a raised portion 384 surrounded by an annular gas chamber 383. The annular gas chamber 383 is defined by a radially inner sidewall 385, a bottom surface 386, and a radially outer sidewall 388 within the cavity 144. In some examples shown, the vertical depth of the cavity 144 within the annular gas chamber 383 ranges from 70 μm to 150 μm, and the vertical depth of the cavity 144 above the raised portion 384 ranges from 5 μm to 30 μm. The outlet of the gas supply hole 310 is located on the raised portion 384.

[0079] exist Figure 9C In the embodiment, the cavity 144 is in a disk shape. A plurality of air supply holes 310 are formed on the bottom surface of the cavity 144. Figure 9C In the embodiment, the vertical depth of the cavity 144 is in the range of 70 μm to 150 μm.

[0080] Now refer to Figure 10 , the arc-resistant ESC 400 includes a top ceramic layer 142 containing a cavity 144. The bottom surface of the cavity 144 includes one or more gas supply holes 410 extending from the cavity 144 to the bottom surface of the top ceramic layer 142. The one or more gas supply holes 410 in the top ceramic layer 142 are located above the pressure relief area 140. In some examples, the one or more gas supply holes 410 include 1 to 5 holes having a diameter in the range of 80 μm to 150 μm.

[0081] The multi-lumen plug 252 is disposed within the cavity 130 and includes a solid core 274. In some examples, the pore size in the multi-lumen plug 252 is in the range of 3 μm to 10 μm. In some examples, the diameter of the solid core 274 is larger than the outer diameter surrounding the one or more gas supply holes 410.

[0082] Now refer to Figure 11FIG. 42 shows another arc-resistant ESC 420. The plug 424 includes a body that defines a plenum 426 and a gas channel 428. One or more gas holes 430 connect the gas channel 428 to the plenum 426. One or more gas feed holes 432 and 434 are disposed between the plenum 426 and the top of the plug 424. In some examples, the gas feed holes 432 and 434 are located radially outward of the radially outer edges of the one or more gas feed holes 410. In some examples, the plug 424 is composed of two parts 437 and 438.

[0083] In some examples, the gas feed holes 432 and 434 include 32 to 150 holes with diameters ranging from 30 pm to 80 pm. In some examples, the one or more gas feed holes 410 include 1 to 5 holes with diameters ranging from 50 pm to 150 pm. In some examples, the plenum 426 has a diameter ranging from 3 mm to 5 mm and a height ranging from 50 pm to 200 pm. In some examples, the one or more gas holes 430 include 1 to 20 holes with diameters ranging from 100 pm to 200 pm. In some examples, the lower portion of the sleeve 374 tapers inwardly from the surface of the cavity 130 (e.g., a radial distance ranging from 0.1 mm to 1 mm) to increase the tracking distance and prevent arcing. In some examples, the plug 424 is composed of two parts, with the break shown at 441.

[0084] Referring now to FIG. 43, Figures 12 to 14 FIG. 44 shows an example of a plug disposed in a cavity 130 in a substrate 120. In Figure 12 FIG. 44, the plug 440 has a “T” shaped cross-section and includes a body and a flange. The plug 440 includes an annular gas channel 442 extending upwardly from a bottom surface thereof. Gas holes 446 extend from an upper surface of the plug 440 to the annular gas channel 442. In some examples, the gas holes 446 are located radially outward of the radially outer edges of the one or more gas feed holes 410. In some examples, the gas holes 446 include 10 to 300 holes with diameters ranging from 30 pm to 150 pm.

[0085] In Figure 13 FIG. 44, the plug 440 has a “T” shaped cross-section and includes a body and a flange. The plug 440 includes an annular gas channel 442 extending upwardly from a bottom surface thereof. Gas holes 446 extend from an upper surface of the plug 440 to the annular gas channel 442. In some examples, the gas holes 446 are located radially outward of the radially outer edges of the one or more gas feed holes 410. In some examples, the gas holes 446 include 10 to 300 holes with diameters ranging from 30 pm to 150 pm. FIG. 44, the plug 440 has a “T” shaped cross-section and includes a body and a flange. The plug 440 includes an annular gas channel 442 extending upwardly from a bottom surface thereof. Gas holes 446 extend from an upper surface of the plug 440 to the annular gas channel 442. In some examples, the gas holes 446 are located radially outward of the radially outer edges of the one or more gas feed holes 410. In some examples, the gas holes 446 include 10 to 300 holes with diameters ranging from 30 pm to 150 pm.

[0086] exist Figure 14 , air supply holes 476 are shown on the top surface of plug 470. In some examples, one or more circles of air supply holes 476 are formed in a circular pattern in plug 470. If multiple circles of air supply holes 476 are used, the circular patterns of the multiple groups of air supply holes 476 are concentric.

[0087] Now refer to Figure 15 , shows another arc resistant ESC 500, which is similar to Figure 11 Arc resistant ESC 420. Figure 15 In, such as Figure 15 As shown, the multi-lumen plug 210 with a solid core 232 is positioned below the air chamber 214 and above the plug 424. In some examples, the bottom surface of the multi-lumen plug 210 extends into the pressure relief zone 140 and is spaced apart from the top surface of the plug 424. In some examples, the depth of the multi-lumen plug 210 extending into the pressure relief zone 140 ranges from 10 μm to 150 μm. In some examples, the gas supply holes 432 are arranged radially outside the outer diameter of the multi-lumen plug 210.

[0088] Now refer to Figure 16 , shows another arc resistant ESC 550, which is similar to Figure 11 Arc resistant ESC 500. Figure 16 In the embodiment shown, multi-lumen plug 210 with solid core 232 is disposed below plenum 214 and above multi-lumen plug 252 with solid core 274. In some examples, a bottom surface of multi-lumen plug 210 extends into pressure relief region 140 and is spaced apart from a top surface of plug 424, as described above.

[0089] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0090] Various terminology is used to describe spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) as well as relationships between elements. The terms "connected," "coupled," "adjacent," "next to," "on top of," "above," and "below" are used broadly and encompass both direct and indirect spatial and functional relationships between elements. Unless the context clearly indicates otherwise, the spatial and functional relationships between elements are described in the above disclosure using these terms can be either direct relationships whereby other intervening elements are not present between the first and second elements, or indirect relationships whereby one or more intervening elements are present between the first and second elements (either spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (OR) using non-exclusive logical OR (A or B or C), and not to mean "at least one of A, at least one of B, and at least one of C."

[0091] In some implementations, a controller is part of a system, which can be part of the above-described examples. Such systems can include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems etc.). These systems can be integrated with electronics for controlling the operations of the systems before, during, and after processing of semiconductor wafers or substrates. The electronics can be referred to as the "controller," which can control various components of the system or subsystems thereof. The controller can be programmed to control any of the processes disclosed herein including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfer into and out of the tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0092] Broadly speaking, the controller can be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions or

[0093] In some implementations, the controller can be part of, or coupled to, a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. Computer can enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, change parameters of current processing, set processing steps to follow for current wafers, or start new processes. In some examples, a remote computer (e.g. a server) can provide process recipes to the system over a network, which can include a local network or the Internet. The remote computer can include a user interface that enables entry or programming of parameters and / or settings, which are then transmitted over the network to the system. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps during one or more operations. It should be understood that the parameters can be specific to a type of process being performed, and a type of tool that the controller is configured to interface with or control. Thus as described above, the controller can be distributed across all or a portion of the tool and / or one or more entities in the manufacturing system. For example, an interface board can be provided that is responsible for generating and transmitting messages to the tool. Thus, the controller can be, but is not limited to, one or more of a part of the tool, a part of the manufacturing system, a part of a computer that is remote from the tool but connected to the tool by a network, a part of a computer that is remote from the tool but connected to the tool by a network, and combinations of these.

[0094] An exemplary system can include, but is not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that can be associated with or used in the manufacturing and / or preparation of semiconductor wafers.

[0095] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. An arc resistant electrostatic chuck comprising: a base plate comprising: a first gas supply hole for supplying a heat transfer gas through the base plate; and a first cavity disposed on a first surface of the base plate and in fluid communication with the first gas supply hole; a top ceramic layer disposed above the base plate and comprising a second cavity on a first surface of the top ceramic layer; a bonding layer configured to bond the base plate to the top ceramic layer and comprising a pressure relief zone; and a first plug disposed in the first cavity of the base plate, wherein the top ceramic layer comprises N gas supply holes disposed above the first plug and comprising outlets within the second cavity, wherein N is an integer greater than 20, and wherein inlets of the N gas supply holes are located in the pressure relief zone.

2. The arc resistant electrostatic chuck of claim 1, wherein N is in a range of 300 to 1200.

3. The arc resistant electrostatic chuck of claim 1, wherein diameters of the N gas supply holes are in a range of 3 pm to 30 pm.

4. The arc resistant electrostatic chuck of claim 1, wherein the N gas supply holes are laser drilled.

5. The arc resistant electrostatic chuck of claim 1, wherein the first plug comprises a porous plug.

6. The arc resistant electrostatic chuck of claim 5, wherein a porosity of the porous plug is in a range of 30% to 50% and the porous plug comprises open pores.

7. The arc resistant electrostatic chuck of claim 1, wherein, the first plug comprises a multi-cavity plug comprising P gas supply holes positioned at a predetermined angle with respect to a vertical direction, wherein P is an integer greater than 20.

8. The arc resistant electrostatic chuck of claim 7, wherein, the predetermined angle is in a range between 0.5° to 5°.

9. The arc resistant electrostatic chuck of claim 7, wherein P is in a range greater than 100 and less than 1000.

10. The arc resistant electrostatic chuck of claim 1, further comprising a first multi-cavity plug comprising M gas supply holes and disposed in a third cavity on a second surface of the top ceramic layer and adjacent to the bonding layer, wherein M is an integer greater than 20.

11. The arc resistant electrostatic chuck of claim 9, wherein M is greater than 100.

12. The arc resistant electrostatic chuck of claim 10, wherein diameters of the M gas supply holes are in a range of 3 pm to 10 pm.

13. The arc resistant electrostatic chuck of claim 10, wherein the first multi-cavity plug further comprises a solid core, and wherein the M gas supply holes of the first multi-cavity plug pass vertically through the first plug and are located radially outward of the solid core.

14. The arc resistant electrostatic chuck of claim 13, wherein, an outer diameter of the solid core is greater than a diameter at which the N gas supply holes are located.

15. The arc resistant electrostatic chuck of claim 10, wherein, the first plug comprises a porous plug.

16. The arc resistant electrostatic chuck of claim 15, wherein, a porosity of the porous plug is in a range of 30% to 50% and comprises open pores.

17. The arc resistant electrostatic chuck of claim 10, wherein, the first plug comprises a second multi-cavity plug comprising a plurality of gas supply holes positioned at a predetermined angle with respect to a vertical direction.

18. The arc resistant electrostatic chuck of claim 17, wherein, the predetermined angle is in a range between 0.5° to 5°.

19. The arc resistant electrostatic chuck of claim 10, wherein, The first plug includes a second multi-cavity plug including T gas supply holes vertically extending through the second multi-cavity plug, where T is an integer greater than 20.

20. The arc resistant electrostatic chuck of claim 19, wherein, The second multi-cavity plug further includes a solid core, wherein the T gas supply holes are radially arranged outside the solid core.

21. The arc resistant electrostatic chuck of claim 10, wherein, The first plug includes a solid plug including a gas supply hole vertically extending through the solid plug.

22. The arc resistant electrostatic chuck of claim 21, wherein, The gas supply hole has a diameter in a range of 100 μm to 500 μm.

23. The arc resistant electrostatic chuck of claim 21, wherein, The solid plug includes a main body having a "T" shaped cross-section and a flange extending outwardly from an upper surface of the main body.

24. The arc resistant electrostatic chuck of claim 1, wherein: The second cavity in the top ceramic layer includes a raised portion and an annular plenum surrounding the raised portion, and The N gas supply holes have outlets disposed on the raised portion.

25. The arc resistant electrostatic chuck of claim 21, wherein the solid plug includes a "T" shaped main body including an annular gas channel extending from a bottom surface into the "T" shaped main body and P gas supply holes extending from the annular gas channel to a top surface of the "T" shaped main body, where P is greater than 10.

26. The arc resistant electrostatic chuck of claim 10, wherein: The first plug includes a first plug portion having a "T" shaped outer cross-section, a cavity extending from a first surface, and a second plug portion having a "T" shaped main body inverted and inserted into the cavity; The second plug portion includes gas supply holes vertically extending through the second plug portion; and The first plug portion includes P gas supply holes extending from the cavity to a top surface of the first plug portion, where P is an integer greater than 10.

27. The arc resistant electrostatic chuck of claim 26, wherein the P gas supply holes have diameters in a range of 20 μm to 150 μm.

28. The arc resistant electrostatic chuck of claim 26, wherein, The P gas supply holes are circularly arranged and P is less than 500.

29. The arc resistant electrostatic chuck of claim 26, wherein, A plenum is defined between an upper surface of the second plug portion and the cavity of the first plug portion.

30. The arc resistant electrostatic chuck of claim 10, wherein, A bottom of the first multi-cavity plug extends vertically to the pressure relief zone.

31. The arc resistant electrostatic chuck of claim 1, wherein, The first plug includes: a main body having a "T" shaped cross-section; a plenum horizontally extending within the main body; a gas channel extending from a bottom surface of the main body to a location spaced apart from the plenum; P gas supply holes fluidly connecting the gas channel to the plenum; and Q gas supply holes fluidly connecting the plenum to a top surface of the main body, where P and Q are integers greater than 1.

32. The arc resistant electrostatic chuck of claim 31, wherein: The Q gas supply holes include 32 to 150 holes having diameters in a range of 30 μm to 80 μm; and The P gas supply holes include 1 to 20 holes having diameters in a range of 100 μm to 200 μm.

33. The arc resistant electrostatic chuck of claim 31, wherein, A lower portion of the first plug tapers inwardly from the first cavity in the base plate.

34. An arc resistant electrostatic chuck comprising: a base plate including: a first gas supply hole for supplying a heat transfer gas; and a second gas supply hole for supplying a process gas. a first cavity disposed on a surface of the substrate and in fluid communication with the first gas feed hole; a top ceramic layer disposed above the substrate and comprising: a second cavity disposed on a first side of the top ceramic layer; an annular protrusion extending into the first cavity and defining a gas feed hole; a plenum disposed below the annular protrusion; and a third cavity disposed below the plenum; a bonding layer configured to bond the substrate with the top ceramic layer and comprising a pressure relief region adjacent to the first cavity; a first plug disposed in the first cavity of the substrate; and a first multi-cavity plug disposed in the third cavity in the top ceramic layer and comprising N gas feed holes, where N is greater than 20.

35. The arc resistant electrostatic chuck of claim 34, wherein N is in a range of 100 to 900.

36. The arc resistant electrostatic chuck of claim 34, wherein a diameter of the N gas feed holes is in a range of 3 pm to 10 pm.

37. The arc resistant electrostatic chuck of claim 34, wherein, The N gas feed holes are laser drilled.

38. The arc resistant electrostatic chuck of claim 34, wherein, The first plug comprises a porous plug.

39. The arc resistant electrostatic chuck of claim 38, wherein, A porosity of the porous plug is in a range of 30% to 50% and includes open pores.

40. The arc resistant electrostatic chuck of claim 34, wherein, The first plug comprises a second multi-cavity plug having P gas feed holes, where P is an integer greater than 20.

41. The arc resistant electrostatic chuck of claim 40, wherein, The second multi-cavity plug comprises a solid core and the P gas feed holes are arranged radially on an outside of the solid core.

42. The arc resistant electrostatic chuck of claim 40, wherein P is an integer in a range of 100 to less than 1000, and wherein a diameter of the P gas feed holes is in a range of 3 pm to 10 pm.

43. The arc resistant electrostatic chuck of claim 40, wherein, The P gas feed holes of the second multi-cavity plug are positioned at a predetermined angle relative to a vertical direction.

44. The arc resistant electrostatic chuck of claim 43, wherein, The predetermined angle is in a range between 0.5° to 5°.

45. The arc resistant electrostatic chuck of claim 34, wherein, The first multi-cavity plug comprises a solid core, and wherein the N gas feed holes are located radially outside of the solid core.

46. The arc resistant electrostatic chuck of claim 45, wherein, An outer diameter of the solid core is greater than a first diameter of the gas feed holes.

47. The arc resistant electrostatic chuck of claim 40, wherein, The first multi-cavity plug comprises a solid core, and wherein the second multi-cavity plug comprises a solid core.

48. The arc resistant electrostatic chuck of claim 34, wherein, The first plug comprises a solid plug having a gas feed hole extending vertically through the solid plug.

49. The arc resistant electrostatic chuck of claim 48, wherein, The solid plug has a "T" shaped cross-section and includes a flange extending outwardly from a body of the solid plug.

50. The arc resistant electrostatic chuck of claim 34, wherein, The first plug comprises: a "T" shaped body including an annular gas channel extending from a bottom surface to the "T" shaped body; and a gas feed hole extending from the annular gas channel to a top surface of the "T" shaped body.

51. The arc resistant electrostatic chuck of claim 34, wherein: the first plug comprises a first plug portion having a "T" shaped outer cross-section and a cavity extending into the first plug portion; and a second plug portion having a "T" shaped body inserted into the cavity of the first plug portion, the second plug portion includes one or more gas feed holes extending vertically through the second plug portion, and the one or more gas feed holes of the second plug portion are positioned at a predetermined angle relative to a vertical direction. The first plug portion includes one or more gas supply holes extending from the cavity to a top surface of the first plug portion.

52. The arc resistant electrostatic chuck of claim 34, wherein, A bottom of the first multi-cavity plug extends to the pressure relief zone.

53. The arc resistant electrostatic chuck of claim 34, wherein, The first plug includes: a body; a plenum horizontally extending within the body; a gas channel extending from a bottom surface of the body to a location spaced apart from the plenum; P gas supply holes fluidically connecting the gas channel to the plenum; and Q gas supply holes fluidically connecting the plenum to a top surface of the body, wherein P and Q are integers greater than 1.

54. The arc resistant electrostatic chuck of claim 53, wherein, The Q gas supply holes are located radially outward of a radially outer edge of the first multi-cavity plug.

55. The arc resistant electrostatic chuck of claim 53, wherein, The Q gas supply holes include 32 to 150 holes having a diameter in a range of 30 μm to 80 μm.

56. The arc resistant electrostatic chuck of claim 53 wherein, The P gas supply holes include 1 to 20 holes having a diameter in a range of 100 μm to 200 μm.

57. The arc resistant electrostatic chuck of claim 53 wherein, A lower portion of the first plug tapers radially inwardly from the first cavity in the substrate.

58. An arc resistant electrostatic chuck comprising: a substrate comprising: a first gas supply hole for supplying a heat transfer gas; and a first cavity disposed on a surface of the substrate and in fluid communication with the first gas supply hole; a top ceramic layer disposed above the substrate and comprising: a second cavity disposed on a first side of the top ceramic layer; and a gas supply hole fluidically connecting the second cavity to a bottom surface of the top ceramic layer; a bonding layer configured to bond the substrate to the top ceramic layer and comprising a pressure relief zone located proximate the first cavity; and a multi-cavity plug disposed in the first cavity and comprising a solid core and T gas supply holes disposed around the solid core, where T is greater than 20.

59. The arc resistant electrostatic chuck of claim 58, wherein T is an integer in a range from 100 to less than 1000.

60. The arc resistant electrostatic chuck of claim 58, wherein the T gas supply holes have a diameter in a range of 3 μm to 10 μm.

61. An arc resistant electrostatic chuck comprising: a substrate comprising: a first gas supply hole for supplying a heat transfer gas; and a first cavity disposed on a surface of the substrate and in fluid communication with the first gas supply hole; a top ceramic layer disposed above the substrate and comprising: a second cavity disposed on a first side of the top ceramic layer; and a gas supply hole fluidically connecting the second cavity to a second surface of the top ceramic layer; a bonding layer configured to bond the substrate to the top ceramic layer and comprising a pressure relief zone located proximate the first cavity; and a plug disposed in the first cavity, the plug comprising: a body; a plenum horizontally extending within the body; a gas channel extending from a bottom surface of the body to a location spaced apart from the plenum; P gas supply holes fluidically connecting the gas channel to the plenum; and Q gas supply holes fluidically connecting the plenum to a top surface of the body, wherein P and Q are integers greater than 1.

62. The arc resistant electrostatic chuck of claim 61, wherein, The Q gas supply holes are located radially outward of the P gas supply holes.

63. The arc resistant electrostatic chuck of claim 61, wherein, The Q gas supply holes comprise 32 to 150 holes having a diameter in the range of 30 μm to 80 μm.

64. The arc resistant electrostatic chuck of claim 61, wherein, The P gas supply holes comprise 1 to 20 holes and have a diameter in the range of 100 μm to 200 μm.

65. The arc resistant electrostatic chuck of claim 61, wherein, The lower portion of the first plug tapers inwardly away from the first cavity in the substrate.

66. An arc resistant electrostatic chuck comprising: a substrate comprising: a first gas supply hole for supplying a heat transfer gas; and a first cavity disposed on a surface of the substrate and in fluid communication with the first gas supply hole; a top ceramic layer disposed above the substrate and comprising: a second cavity disposed on a first side of the top ceramic layer; and a gas supply hole fluidically connecting the second cavity to a bottom surface of the top ceramic layer; a bonding layer configured to bond the substrate to the top ceramic layer and comprising a pressure relief region proximate the first cavity; and a first plug comprising a "T" shaped body comprising: an annular gas channel extending from a bottom surface to the "T" shaped body; and P gas supply holes extending from the annular gas channel to a top surface of the "T" shaped body, wherein P is an integer greater than 10.

67. The arc resistant electrostatic chuck of claim 66, wherein P is an integer in the range from 10 to less than 1000.

68. The arc resistant electrostatic chuck of claim 66, wherein the P gas supply holes have a diameter in the range of 30 μm to 150 μm.

69. An arc resistant electrostatic chuck comprising: a substrate comprising: a first gas supply hole for supplying a heat transfer gas; and a first cavity disposed on a surface of the substrate and in fluid communication with the first gas supply hole; a top ceramic layer disposed above the substrate and comprising: a second cavity disposed on a first side of the top ceramic layer; and a gas supply hole fluidically connecting the second cavity to a bottom surface of the top ceramic layer; a bonding layer configured to bond the substrate to the top ceramic layer and comprising a pressure relief region proximate the first cavity; and a first plug comprising: a first plug portion having a "T" shaped outer cross section and a cavity extending upwardly from a bottom surface thereof; and a second plug portion having a "T" shaped body inserted into the cavity of the first plug portion, wherein the second plug portion comprises one or more gas supply holes extending vertically through the second plug portion, and wherein the first plug portion comprises P gas supply holes extending from the cavity to a top surface of the first plug portion, wherein P is an integer greater than 10.

70. The arc resistant electrostatic chuck of claim 69, wherein, P is an integer in the range from 10 to less than 1000.

71. The arc resistant electrostatic chuck of claim 69, wherein, The P gas supply holes have a diameter in the range of 30 μm to 150 μm.

72. The arc resistant electrostatic chuck of claim 69, wherein, The first plug portion and the second plug portion are made of ceramic.

73. An arc reduction plug for a heat transfer gas hole in a substrate of an electrostatic chuck, comprising: a body having a "T" shaped cross section comprising a flange; an annular gas passage extending from a first surface of the body distal from the flange; and P gas feed holes extending from the annular gas passage to a second surface of the body proximal to the flange, where P is an integer in the range of 10 to less than 1000, and where the P gas feed holes have a diameter in the range of 30 μm to 150 μm.

74. The arc reduction plug of claim 73, wherein the body is made of ceramic.

75. An arc reduction plug for heat transfer gas holes in an electrostatic chuck substrate, comprising: a first plug portion having a "T" shaped outer cross section and a cavity extending upwardly from a first surface thereof; and a second plug portion having a "T" shaped cross section, the second plug portion inverted and inserted into the cavity of the first plug portion, wherein the second plug portion includes one or more gas feed holes extending vertically through the second plug portion, and wherein the first plug portion includes P gas feed holes extending from the cavity to a top surface thereof, where P is an integer in the range of 10 to less than 1000.

76. The arc reduction plug of claim 75, wherein, the P gas feed holes have a diameter in the range of 30 μm to 150 μm.

77. The arc reduction plug of claim 75, wherein, the first plug portion and the second plug portion are made of ceramic.

78. An arc reduction plug for heat transfer gas holes of an electrostatic chuck, comprising: a body; a plenum extending horizontally within the body; a gas passage extending from a bottom surface of the body to a location spaced apart from the plenum; P gas feed holes fluidically connecting the gas passage to the plenum; and Q gas feed holes fluidically connecting the plenum to a top surface of the body, where P and Q are integers greater than 1.

79. The arc reduction plug of claim 78, wherein the Q gas feed holes are located radially outward of the P gas feed holes.

80. The arc reduction plug of claim 78, wherein the Q gas feed holes include 32 to 150 holes having a diameter in the range of 30 μm to 80 μm.

81. The arc reduction plug of claim 78, wherein, the P gas feed holes include 1 to 20 holes having a diameter in the range of 100 μm to 200 μm.

82. The arc reduction plug of claim 78, wherein, a lower portion of the first plug portion tapers inwardly.

81. The arc reduction plug of claim 78, wherein the P gas feed holes include 1 to 20 holes having a diameter in the range of 100 μm to 200 μm.

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