Silicon carbide liquid phase method single crystal growth furnace
By designing buffer components and heat replenishment components on the outer casing of the silicon carbide liquid phase single crystal growth furnace, the problems of heat loss and unstable movement were solved, achieving stability in high-temperature environments and buffering and shock absorption during movement.
Patent Information
- Application Number
- CN202511367029.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-24
- Publication Date
- 2025-10-28
AI Technical Summary
Existing silicon carbide liquid phase growth furnaces have high heat loss rates under high-temperature environments and lack effective buffering and shock absorption measures during movement.
The design incorporates an outer casing, buffer components, support base, and heat replenishment components. Through the cooperation of elastic sealing gaskets and heat replenishment components, it achieves buffering and shock absorption and heat replenishment for the single crystal production furnace, and utilizes guide pipes and universal wheels to improve movement stability.
It effectively reduces heat loss, maintains stability in high-temperature environments, and improves stability and shock absorption during movement.
Smart Images
Figure CN120844196A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of single crystal growth furnace technology, specifically to a silicon carbide liquid phase single crystal growth furnace. Background Technology
[0002] Liquid phase method is a key technology for preparing high-quality silicon carbide single crystals, which requires stable growth of the melt in a high-temperature environment. Although existing silicon carbide liquid phase growth furnaces use insulation layers for heat preservation, the heat loss rate is usually still high, which affects product quality. In addition, existing silicon carbide liquid phase growth furnaces are usually moved by movable devices, but there is a lack of buffering and shock absorption for the silicon carbide liquid phase growth furnace during the movement. Summary of the Invention
[0003] The purpose of this invention is to provide a silicon carbide liquid phase single crystal growth furnace that reduces heat loss and provides a fundamental guarantee for stable temperature.
[0004] To solve the above-mentioned technical problems, the present invention provides the following technical solution: a silicon carbide liquid phase single crystal growth furnace, comprising: a single crystal production furnace body; an outer cover, the outer cover being disposed outside the single crystal production furnace body; multiple buffer members, the multiple buffer members being evenly distributed circumferentially outside the single crystal production furnace body; a support base, the support base being disposed between the multiple buffer members, the support base being adapted to the buffer members, and the support base being fixedly connected to the outer cover; a buffer pad, the buffer pad being disposed on the top of the support base, the buffer pad being used to support the single crystal production furnace body; an elastic sealing gasket, an elastic sealing gasket being disposed between each two adjacent buffer members, and the elastic sealing gasket sealingly connecting the outer wall of the single crystal production furnace body and the inner wall of the outer cover; and a heating assembly, multiple heating assemblies being movably disposed on the support base, the number of heating assemblies being equal to the number of buffer members and their positions corresponding, and each heating assembly being able to cooperate with a corresponding buffer member.
[0005] Furthermore, it also includes: a base, which is located at the bottom of the support; and a second omnidirectional wheel, with multiple second omnidirectional wheels evenly distributed on the bottom of the base.
[0006] Furthermore, the cushioning element includes an elastic strip, which is disposed on the inner wall of the outer cover.
[0007] Furthermore, the elastic strip includes: an arc portion, having two arc portions symmetrically arranged; a protrusion portion disposed between the two arc portions; wherein the two arc portions are sealed to the inner wall of the outer cover.
[0008] Furthermore, the heat replenishment component includes: a first guide tube, which is movably mounted on the support via a rotating shaft; and a second guide tube, which is connected to one end of the first guide tube; wherein, each protrusion is provided with a slot, and the outer cover is provided with an opening, the number of openings being equal to the number of slots, each opening corresponding to a slot, and the second guide tube can pass through the opening and fit into the slot.
[0009] Furthermore, the second guide tube is provided with a plurality of first air guide holes, and the protrusion is provided with a plurality of second air guide holes. The number of first air guide holes and second air guide holes are equal and their positions correspond. The protrusion is also provided with a plurality of third air guide holes. The number of third air guide holes is equal and their positions correspond to the second air guide holes. Each third air guide hole is connected to the corresponding second air guide hole.
[0010] Furthermore, the heating assembly also includes an air inlet pipe, which is connected to the end of the first guide pipe away from the second guide pipe, and is used to connect to external heat flow.
[0011] Furthermore, the heat replenishment component also includes a first universal wheel, which is located at the end of the second guide tube away from the first guide tube.
[0012] Furthermore, each of the second guide tubes is fixed in the slot by a fixing component, which includes: a magnetic strip disposed on the outer wall of the second guide tube, and a second adsorption strip disposed on the outer cover, wherein the magnetic strip can adsorb the second adsorption strip.
[0013] Furthermore, the support base is provided with multiple first adsorption strips, the number of which is equal to the number of second adsorption strips; by rotating each first guide tube, each magnetic strip can be driven to adsorb the first adsorption strip respectively, and when the magnetic strip adsorbs the first adsorption strip, the lowest end of the first universal wheel is flush with the lowest end of the second universal wheel.
[0014] Compared with the prior art, the beneficial effects achieved by the present invention are as follows: 1. The present invention introduces hot air flow to supplement the heating of the single crystal production furnace body, which facilitates the maintenance of the high temperature environment inside the single crystal production furnace body and reduces heat loss, thereby providing a basic guarantee for stable temperature.
[0015] 2. By rotating the first and second guide tubes, the magnetic strip is attracted to the first adsorption strip. At this time, the first universal wheel also contacts the ground, which helps to improve the stability of movement. At the same time, it also helps to improve the buffering and shock absorption effect on the single crystal production furnace body. Attached Figure Description
[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention.
[0017] Figure 2 This is a partial structural schematic diagram of the present invention.
[0018] Figure 3 This is a schematic diagram of the buffer structure of the present invention.
[0019] Figure 4 This is a schematic diagram of the buffer component of the present invention from another angle.
[0020] Figure 5 This is a schematic diagram of the connection between the buffer component and the outer cover of the present invention.
[0021] Figure 6 This is the present invention. Figure 2 Cross-sectional view of the structure shown.
[0022] Figure 7 This is a schematic diagram of the state in which the magnetic strip of the present invention adsorbs the first adsorption strip.
[0023] In the diagram: 1. Single crystal production furnace body; 2. Outer cover; 21. Opening; 3. Buffer component; 31. Elastic strip; 311. Protrusion; 3111. Second air guide hole; 3112. Third air guide hole; 3113. Slot; 32. Arc part; 4. Elastic sealing gasket; 41. Exhaust pipe; 5. Support base; 6. Heating component; 61. First guide pipe; 62. Second guide pipe; 621. First air guide hole; 63. Air inlet pipe; 64. Rotating shaft; 65. First universal wheel; 7. Base; 71. Second universal wheel; 72. First adsorption strip; 8. Fixing component; 81. Magnetic strip; 82. Second adsorption strip; 9. Buffer pad. Detailed Implementation
[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0025] Example 1 Please see Figures 1-6This invention provides a technical solution: a silicon carbide liquid-phase single crystal growth furnace, comprising a single crystal production furnace body 1. The single crystal production furnace body 1 adopts existing equipment, including a shell and a reaction system, heating system, stabilization and control system, cooling auxiliary system, and insulation layer disposed inside the shell, which are existing technologies and will not be described in detail here. An outer cover 2 is provided outside the single crystal production furnace body 1, and three buffer members 3 are provided on the inner wall of the outer cover 2. The three buffer members 3 are evenly distributed circumferentially outside the single crystal production furnace body 1, and the buffer members 3 are perpendicular to the single crystal production furnace body 1. The outer wall of the body 1 is in contact; an elastic sealing gasket 4 is provided between two adjacent buffer components 3, and the elastic sealing gasket 4 is sealed to the outer wall of the single crystal production furnace body 1 and the inner wall of the outer cover 2; a support base 5 is provided between the three buffer components 3, and a buffer pad 9 is provided on the top of the support base 5. The single crystal production furnace body 1 is placed on the buffer pad 9, that is, the buffer pad 9 is used to support the single crystal production furnace body 1; the support base 5 is fixedly connected to the outer cover 2, and the support base 5, the outer cover 2, the elastic sealing gasket 4, the buffer components 3 and the outer wall of the single crystal production furnace body 1 form a sealed cavity.
[0026] The elastic sealing gasket 4 and the buffer gasket 9 can be made of elastic materials such as silicone or rubber.
[0027] Three heating components 6 are movably mounted on the support base 5. The heating components 6 are rotatable. The number of heating components 6 is equal to that of the buffer components 3 and their positions correspond. Each heating component 6 can be fitted onto the corresponding buffer component 3. A base 7 is provided at the bottom of the support base 5. Multiple second universal wheels 71 are evenly distributed at the bottom of the base 7. Each second universal wheel 71 is a universal wheel with a built-in brake structure.
[0028] The buffer 3 uses an elastic strip 31, which abuts against the outer wall of the single crystal production furnace body 1. The elastic strip 31 consists of two arc-shaped parts 312 and a protrusion 311. The two arc-shaped parts 312 are symmetrically arranged, and the protrusion 311 is located between the two arc-shaped parts 312. The top and bottom ends of the two arc-shaped parts 312 are sealed to the inner wall of the outer cover 2. The elastic strip 31 can be made of polyethylene or composite material (such as metal mesh covered with silicone), so that the elastic strip 31 has good elasticity.
[0029] A slot 3113 is provided on the protrusion 311, and the cross-section of the slot 3113 is semi-circular; an opening 21 is provided through the outer cover 2, and the number of openings 21 is equal to that of the slot 3113 and their positions correspond.
[0030] The heat replenishment component 6 includes a first guide tube 61, on which a rotating shaft 64 is fixedly connected. The rotating shaft 64 is horizontally positioned and movably mounted on the support base 5 via a bearing. A second guide tube 62 is connected to one end of the first guide tube 61. The second guide tube 62 can pass through the opening 21 and fit into the slot 3113. To achieve the fit of the second guide tube 62 into the slot 3113, each second guide tube 62 is fixed in position by a fixing component 8.
[0031] An air inlet pipe 63 is connected to the end of the first guide pipe 61 away from the second guide pipe 62. The air inlet pipe 63 is used to connect to the external hot airflow. A plurality of first air guide holes 621 are provided on the first guide pipe 61, and a plurality of second air guide holes 3111 are provided on the protrusion 311. The number of first air guide holes 621 and second air guide holes 3111 are equal and their positions correspond. When the second guide pipe 62 is fitted in the slot 3113, each second air guide hole 3111 is connected to the corresponding first air guide hole 621. At the same time, a plurality of third air guide holes 3112 are also provided through the protrusion 311. The number of third air guide holes 3112 and second air guide holes 3111 are equal and their positions correspond. Each third air guide hole 3112 intersects with the corresponding second air guide hole 3111, that is, each third air guide hole 3112 is connected to the corresponding second air guide hole 3111, and the two ends of the third air guide hole 3112 are connected to the sealed cavity.
[0032] When the second guide pipe 62 is fitted into the slot 3113, the air inlet pipe 63 is connected to the external hot airflow with a certain pressure through the soft conduit, so that the hot airflow can be introduced into the sealed cavity. At the same time, an exhaust pipe 41 is installed on one of the elastic sealing gaskets 4. The exhaust pipe 41 is sealed to the elastic sealing gasket 4, and the discharge pipe is connected to the sealed cavity. The exhaust pipe 41 can be connected to an external airflow recovery device to recover the airflow discharged from the exhaust pipe 41. By introducing hot airflow into the sealed cavity, it is used to supplement the heat of the single crystal production furnace body 1, thereby maintaining the high temperature environment inside the single crystal production furnace body 1, reducing the heat loss of the shell of the single crystal production furnace body 1, and helping to provide a basic guarantee for stable temperature.
[0033] At the same time, when the second guide tube 62 is engaged in the slot 3113, the second guide tube 62 abuts against the elastic strip 31, which helps the elastic strip 31 to press against the single crystal production furnace body 1, thereby improving the stability of the single crystal production furnace body 1; since the single crystal production furnace body 1 is supported by the buffer pad 9, and the single crystal production furnace body 1 is pressed against by multiple elastic strips 31, and an elastic sealing pad 4 is provided, it helps to buffer and reduce the vibration of the single crystal production furnace body 1 as a whole during operation.
[0034] Example 2 See again Figure 2 and Figure 5Based on Embodiment 1, the fixing component 8 includes a magnetic strip 81 fixedly disposed on the outer wall of the second guide tube 62, and a second adsorption strip 82 fixedly disposed on the outer cover 2. The magnetic strip 81 can adsorb the second adsorption strip 82, and the material of the second adsorption strip 82 is iron. When the second guide tube 62 is fitted in the slot 3113, the second adsorption strip 82 just contacts the magnetic strip 81, thereby fixing the position of the second guide tube 62.
[0035] Example 3 Please see Figures 1-7 Based on Embodiment 2, this embodiment has a first universal wheel 65 fixedly provided at the end of each second guide tube 62 away from the first guide tube 61. When the second guide tube 62 is fitted in the slot 3113, the first universal wheel 65 also passes through the opening 21, and part of the first universal wheel 65 is located inside the slot 3113.
[0036] A first adsorption strip 72 is provided on the base 7. The number of first adsorption strips 72 and second adsorption strips 82 is equal. The first adsorption strip 72 is located below the second adsorption strip 82, and the material of the first adsorption strip 72 is also iron. When the force between the magnetic strip 81 and the second adsorption strip 82 is overcome, and the first guide tube 61 and the second guide tube 62 are rotated, and when the first guide tube 61 and the second guide tube 62 are rotated 180 degrees, so that the second guide tube 62 is below the first guide tube 61, each magnetic strip 81 adsorbs each first adsorption strip 72. At this time, the lowest point of the first universal wheel 65 is flush with the lowest point of the second universal wheel 71. Figure 7 The state shown.
[0037] In this embodiment, by rotating the first guide tube 61 and the second guide tube 62, the magnetic strip 81 is attracted to the first adsorption strip 72, thus fixing the position of the second guide tube 62. When moving the whole assembly, the first universal wheel 65 contacts the ground, improving the stability of the movement. Of course, this also applies when moving in a non-working state. At the same time, since the second guide tube 62 is detached from the elastic strip 31, the elastic strip 31 is deformed, which helps to improve the buffering effect of the elastic strip 31 on the single crystal production furnace body 1. That is, during the movement, the buffering and shock absorption effect on the single crystal production furnace body 1 is improved.
[0038] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
Claims
1. A silicon carbide liquid-phase single crystal growth furnace, comprising a single crystal production furnace body (1), characterized in that, Also includes: The outer cover (2) is set outside the body (1) of the single crystal production furnace; Buffer (3), there are multiple buffers (3), and multiple buffers (3) are evenly distributed around the outside of the single crystal production furnace body (1); Support base (5) is set between multiple buffers (3), the support base (5) is adapted to the buffers (3), and the support base (5) is fixedly connected to the outer cover (2). Buffer pad (9) is set on top of support base (5) and is used to support the body of single crystal production furnace (1). An elastic sealing gasket (4) is provided between each of the two adjacent buffers (3), and the elastic sealing gasket (4) seals the connection between the outer wall of the single crystal production furnace body (1) and the inner wall of the outer cover (2); The heating component (6) is movably mounted on the support base (5). The number of heating components (6) is equal to that of the buffer component (3) and their positions correspond. Each heating component (6) can be fitted onto the corresponding buffer component (3).
2. The silicon carbide liquid-phase single crystal growth furnace according to claim 1, characterized in that, Also includes: The base (7) is located at the bottom of the support (5); The second universal wheel (71) is evenly distributed on the bottom of the base (7).
3. The silicon carbide liquid-phase single crystal growth furnace according to claim 1, characterized in that, The buffer (3) includes an elastic strip (31), which is disposed on the inner wall of the outer cover (2).
4. A silicon carbide liquid-phase single crystal growth furnace according to claim 3, characterized in that, The elastic strip (31) includes: The arc portion (312) has two parts, and the two arc portions (312) are arranged symmetrically; A protrusion (311) is provided between two arcuate portions (312); Among them, the two arc-shaped parts (312) are sealed to the inner wall of the outer cover (2).
5. A silicon carbide liquid-phase single crystal growth furnace according to claim 4, characterized in that, The heat exchange component (6) includes: The first guide tube (61) is movably mounted on the support base (5) via a rotating shaft (64); The second guide tube (62) is connected to one end of the first guide tube (61); Each protrusion (311) is provided with a slot (3113), and the outer cover (2) is provided with an opening (21). The number of openings (21) and slots (3113) are equal, and each opening (21) corresponds to each slot (3113). The second guide tube (62) can pass through the opening (21) and fit in the slot (3113).
6. A silicon carbide liquid-phase single crystal growth furnace according to claim 5, characterized in that, The second guide tube (62) is provided with a plurality of first air guide holes (621), and the protrusion (311) is provided with a plurality of second air guide holes (3111). The number of first air guide holes (621) and second air guide holes (3111) are equal and their positions correspond. The protrusion (311) is also provided with a plurality of third air guide holes (3112). The number of third air guide holes (3112) is equal to that of the second air guide holes (3111) and their positions correspond. Each third air guide hole (3112) is connected to the corresponding second air guide hole (3111).
7. A silicon carbide liquid-phase single crystal growth furnace according to claim 5, characterized in that, The heating assembly (6) also includes an air inlet pipe (63), which is connected to the end of the first guide pipe (61) away from the second guide pipe (62). The air inlet pipe (63) is used to connect to external heat flow.
8. A silicon carbide liquid-phase single crystal growth furnace according to claim 5, characterized in that, The heating assembly (6) also includes a first caster wheel (65), which is located at the end of the second guide tube (62) away from the first guide tube (61).
9. A silicon carbide liquid-phase single crystal growth furnace according to claim 8, characterized in that, Each second guide tube (62) is fixed in the slot (3113) by a fixing component (8), the fixing component (8) including: Magnetic strip (81) is disposed on the outer wall of the second guide tube (62). The second adsorption strip (82) is disposed on the outer cover (2), and the magnetic strip (81) can adsorb the second adsorption strip (82).
10. A silicon carbide liquid-phase single crystal growth furnace according to claim 9, characterized in that, The support base (5) is provided with multiple first adsorption strips (72), and the number of first adsorption strips (72) and second adsorption strips (82) is equal. By rotating each first guide tube (61), each magnetic strip (81) can be driven to adsorb the first adsorption strip (72) respectively. When the magnetic strip (81) adsorbs the first adsorption strip (72), the lowest end of the first universal wheel (65) is flush with the lowest end of the second universal wheel (71).