Resistance measurement correction method and system

Abstract

The invention provides a resistance measurement correction method and system. The method comprises the following steps: acquiring geometric characteristic values of tip parts of two current probes of four-probe equipment; calculating a current probe correction factor based on the geometric feature values of the tip parts of the two current probes; measuring the resistance of the sample by using the four-probe equipment so as to obtain a resistance measurement value rho 0; and correcting the resistance measurement value rho 0 by using the current probe correction factor to obtain a corrected resistance value rho. By adopting the resistance measurement correction method and system provided by the invention, even if the tip of the probe is abraded, the resistance measurement result can be corrected in time, so that the accuracy of the measurement result of four-probe equipment can be improved.

Description

Technical Field

[0001] This invention relates to the field of four-probe testing technology, and in particular to a four-probe resistance measurement method and system. Background Technology

[0002] A four-probe device is a versatile measurement instrument that utilizes the four-probe measurement principle. It is specifically designed for testing the resistivity and sheet resistance (thin-film resistance) of semiconductor materials. Figure 1 As shown, the current probe 1, voltage probe 2, voltage probe 3, and current probe 4 of the four-probe device are arranged in a fixed position. By injecting current into the silicon wafer and detecting the voltage difference, the resistivity is calculated according to the following formula:

[0003] Where V is the potential difference between probe 2 and probe 3, I is the current flowing through probe 1, and S is the probe spacing.

[0004] Because silicon wafers have a high Mohs hardness (6.5), the probe penetration depth of a four-probe device is less than 0.5µm, typically around 0.2µm. Therefore, the contact between the 4PP probe and the silicon wafer during testing can be considered as "point contact." As the number of probe uses increases, the probe tips will wear down, and the actual contact with the silicon wafer will gradually change from "point contact" to "surface contact." This causes deviations in the actual current distribution and probe spacing during measurement. If not corrected, this will increase the measurement error, which can reach 16.9%.

[0005] Existing technology involves repeatedly testing the standard sample over a certain period of time and manually assigning a correction coefficient, but the correction is not timely. Summary of the Invention

[0006] The purpose of this invention is to provide a resistance measurement method and system to solve the problem of measurement errors caused by wear at the probe tip of a four-probe device.

[0007] To address the aforementioned technical problems, this invention provides a resistance measurement correction method for correcting the resistance measurement results of a four-probe device, wherein the four-probe device includes two current probes and two voltage probes, and the correction method includes: Obtain the geometric feature values ​​of the tips of the two current probes; Based on the geometric characteristic values ​​of the tips of the two current probes, the current probe correction factor K is calculated using the following formula. s : In the formula, δ1 and δ4 represent the equivalent offsets of the two current probes, respectively, and r eq1 、r eq4Let represent the equivalent radii of the two current probes, s represent the distance between two adjacent probes, and z be an integer greater than or equal to 3. These are the coefficients of the two current probes, respectively; The sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and, Using the current probe correction factor K s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

[0008] Optionally, in the aforementioned resistance measurement correction method, the equivalent offset of the current probe can be obtained in the following manner: Based on the geometric characteristic values ​​of the two current probes, the equivalent radius, shape factor, and eccentricity of the two current probes are calculated respectively; and, The equivalent offset of each current probe is calculated based on its eccentricity and shape factor.

[0009] Optionally, in the resistance measurement correction method, δ1 and δ4 are obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two current probes.

[0010] Optionally, in the resistance measurement correction method, the correction method further includes: Obtain the geometric feature values ​​of the tips of the two voltage probes; Based on the geometric feature values ​​of the two voltage probe tips, the voltage probe correction factor K is calculated. v ;as well as, Using the current probe correction factor K s While correcting the resistance measurement value ρ0, the voltage probe correction factor K is also used. v The measured resistance value ρ0 is corrected.

[0011] Optionally, in the resistance measurement correction method, a voltage probe correction factor K is calculated based on the geometric characteristic values ​​of the two voltage probes. v include: Based on the geometric characteristic values ​​of the two voltage probes, the equivalent radius, shape factor, and eccentricity of the two voltage probes are calculated respectively. Based on the shape factor and eccentricity of each voltage probe, the respective positional offset is calculated; and, The voltage probe correction factor K is calculated by combining the position offset of the two voltage probes and the equivalent radius. v .

[0012] Optionally, in the resistance measurement correction method, the voltage probe correction factor K is calculated using a preset second function. v The second function satisfies:

[0013] Wherein, β2 and β3 represent the positional offsets of the two voltage probes, respectively, obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two voltage probes. eq2 、r eq3 denoted by and s, respectively, represent the equivalent radii of the two voltage probes, and s represents the distance between two adjacent probes.

[0014] Optionally, in the resistance measurement correction method, the geometric characteristic values ​​include area A, perimeter P, and minimum moment of inertia I. min and maximum moment of inertia I max ; Calculate the equivalent radius r eq The function satisfies:

[0015] The function that calculates the shape factor k satisfies:

[0016] The function that calculates the eccentricity e satisfies: Optionally, in the aforementioned resistance measurement correction method, K is used. s and K v Correcting the resistance measurement value ρ0 includes: Substituting the measured resistance value ρ0 into the formula: ρ=K s × K v The corrected resistance value ρ is obtained by calculating ×ρ0.

[0017] The present invention also provides a resistance measurement correction system for correcting the resistance measurement results of a four-probe device, the four-probe device including two current probes and two voltage probes, the correction system comprising: A geometric feature recognition module is used to obtain the geometric feature values ​​of the tips of the two current probes; The correction factor generation module is used to calculate the current probe correction factor K based on the geometric feature values ​​of the two current probes. s ;as well as, The resistance correction module is used to utilize the current probe correction factor K. s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ; The correction factor generation module calculates the current probe correction factor using the following formula: In the formula, δ1 and δ4 represent the equivalent offsets of the two current probes, respectively, and r eq1 、r eq4 Let represent the equivalent radii of the two current probes, s represent the distance between two adjacent probes, and z be an integer greater than or equal to 3. These are the coefficients of the two current probes, respectively.

[0018] Optionally, in the resistance measurement correction system, the geometric feature recognition module is also used to obtain the geometric feature values ​​of the tips of the two voltage probes; The correction factor generation module is also used to calculate the voltage probe correction factor K based on the geometric feature values ​​of the two voltage probes. v ; The resistance correction module is also used to utilize the current probe correction factor K. s While correcting the resistance measurement value ρ0, the voltage probe correction factor K is also used. v The measured resistance value ρ0 is corrected.

[0019] In summary, the resistance measurement correction method and system provided by this invention include: acquiring the geometric feature values ​​of the tips of two current probes in a four-probe device; and calculating the current probe correction factor K based on the geometric feature values ​​of the two current probe tips. s The sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and the current probe correction factor K is used to... s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ. Using the resistance measurement correction method and system provided by this invention, even if the probe tip is worn, the resistance measurement result can be corrected in a timely manner, thereby improving the accuracy of the measurement results of the four-probe device. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the four probes arrangement for a four-probe device.

[0021] Figure 2 This is a flowchart of a resistance measurement correction method provided in Embodiment 1 of the present invention.

[0022] Figure 3 This is a flowchart of the resistance measurement correction method provided in Embodiment 2 of the present invention. Detailed Implementation

[0023] To make the objectives, advantages, and features of the present invention clearer, the resistance measurement correction method and system provided by the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, only used to facilitate and clearly illustrate the objectives of the embodiments of the present invention. Furthermore, the structures shown in the drawings are often part of the actual structure. In particular, different figures may have different focuses and sometimes use different scales. It should also be understood that, unless specifically stated or indicated, the terms "first," "second," "third," etc., in the specification are only used to distinguish the various components, elements, steps, etc., in the specification, and are not used to indicate the logical or sequential relationships between the various components, elements, steps, etc.

[0024] Example 1 This embodiment provides a resistance measurement correction method for correcting the resistance measurement results of a four-probe device. As mentioned above, the four-probe device includes two current probes and two voltage probes, with current probe 1, voltage probe 2, voltage probe 3, and current probe 4 arranged in sequence.

[0025] like Figure 2 As shown, the correction method provided in this embodiment includes the following steps: S11, Obtain the geometric feature values ​​of the tips of the two current probes; S12, Based on the geometric feature values ​​of the two current probe tips, calculate the current probe correction factor K. s ; S13, the sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and... S14, using the current probe correction factor K s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

[0026] By using the resistance measurement correction method and system provided by this invention, even if the probe tip is worn, the resistance measurement result can be corrected in time, thereby improving the accuracy of the measurement results of the four-probe device.

[0027] In step S11, the geometric feature value of the probe tip is the geometric feature value of the contact surface when the probe contacts the target object. Specifically, this can be achieved by acquiring a topographic image of the probe tip and then identifying the geometric feature value based on the topographic image.

[0028] The geometric characteristic values ​​may specifically include: area A, perimeter P, and minimum moment of inertia I. min and maximum moment of inertia I max .

[0029] In step S12, the current probe correction factor K can be calculated using a preset first function. s The first function satisfies the following formula: In the formula, δ1 and δ4 represent the equivalent offsets of the two current probes, respectively, and r eq1 、r eq4 The two current probes are respectively represented by their equivalent radii, s represents the distance between two adjacent probes, and z is an integer greater than or equal to 3, which are the coefficients of the two current probes respectively.

[0030] Optionally, the equivalent offset of the current probe can be obtained in the following way: Based on the geometric characteristic values ​​of the two current probes, the equivalent radius, shape factor, and eccentricity of the two current probes are calculated respectively; based on the eccentricity and shape factor of each current probe, the equivalent offset of each probe is calculated.

[0031] Optionally, δ1 and δ4 are obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two current probes. That is, after calculating δ1 and δ4 using monotonically increasing functions related to the shape factor and eccentricity of the current probes, the current probe correction factor K is calculated according to the first function mentioned above. s .

[0032] Optionally, the monotonically increasing function related to the shape factor and eccentricity of the current probe satisfies: δ∝b(k-1)+ce, where b and c are constants.

[0033] Based on the characteristics of the equivalent current offset of the two current probes, δ1 and δ4 can be obtained using the same monotonically increasing function. That is, when calculating δ1 and δ4, b and c take the same value.

[0034] The equivalent radius of the current probe is determined by a function related to A, reflecting the area normalization characteristics of the contact surface. The shape factor is determined by a function related to P and A, characterizing the irregularity of the contact surface edge. The eccentricity is determined by a function related to I. min and I max The relevant function is determined to characterize the degree to which the contact surface deviates from a circle.

[0035] in, Calculate the equivalent radius r eq The function satisfies:

[0036] The function that calculates the shape factor k satisfies:

[0037] The function for calculating the eccentricity e satisfies:

[0038] In step S13, when measuring the sample resistance using a four-probe device, the calculation formula for the resistance measurement value is: .

[0039] Where, V is the potential difference between probe 2 and probe 3; I is the current value flowing through probe 1, and S is the distance between adjacent two probes.

[0040] In step S14, specifically, the resistance measurement value ρ0 can be substituted into the formula: ρ = K s ×ρ0 for calculation to obtain the corrected resistance value ρ.

[0041] As an example, the formula for calculating the equivalent radius is:

[0042] As an example, the formula for calculating the shape factor is:

[0043] As an example, the formula for calculating the eccentricity is:

[0044] As an example, the formula for calculating the equivalent offset of the current probe is:

[0045] Where, a, b, and c are all constants, 0 < a < 1, 0 < b < 0.5, 0 < c < 0.1. By combining k and e of a large number of different current probes, a dataset containing k, e, and the true offset is obtained, and the least squares method is used for linear regression, and finally the values of a, b, and c are obtained.

[0046] As an example, calculating the current probe correction factor K s The formula for is:

[0047] That is, the value of z is 4. When the value of z is 4, it can meet the general requirements of engineering applications. In this calculation formula, the coefficient (where i is the number of high-order correction terms and n is the current probe number) also depends on k and e of the current probe, and its calculation formula can be as follows:

[0048] Where, the coefficient of probe 1 , the coefficient of probe 4 is the coefficient of the circular contact surface ai 、r i For coefficients, , The specific values ​​of can be obtained by acquiring the geometry of the contact surface and controlling the shape using the current probes k and e. The ranges of k and e are defined, and the potential at each point in each (k, e) group is calculated using Laplace. The potential distortion coefficient under a specific shape is extracted from the potential distribution to obtain a dataset containing k, e, and the potential distortion coefficient. Isolinear regression is performed using the least squares method to obtain the corresponding values. The calculation results are shown in Table 1 below. Table 1

[0049] Based on the formulas in the examples above, the resistance measurement correction method and system provided in this embodiment will be illustrated below.

[0050] The equivalent radius r obtained based on the geometric eigenvalues ​​of probe 1 and probe 4 eq The statistical results of shape factor k and eccentricity e are shown in Table 2: Table 2

[0051] Based on Table 2 and the formulas above, calculate δ1, δ4, and K respectively. s .

[0052] The statistical results for V, I, and S are shown in Table 3, where V is the potential difference between probe 2 and probe 3, I is the current flowing through probe 1, and S is the probe spacing. Table 3

[0053] Based on Table 3 and in conjunction with the formula Calculate the value of ρ.

[0054] The resistance of the standard sample was 0.0043 ohm·cm. The calculated resistance was 0.00357 ohm·cm. After correction using the method provided in this embodiment, the resistance was 0.004246 ohm·cm. The calculation process verified the influence of the contact area between the probe and the target object on the final resistance. The measured resistance was lower than the actual resistance, reducing the measurement error from 16.9% to 1.3%.

[0055] Furthermore, embodiments of the present invention also provide a resistance measurement correction system for correcting the resistance measurement results of a four-probe device, wherein the four-probe device includes two current probes and two voltage probes, and the correction system includes: A geometric feature recognition module is used to obtain the geometric feature values ​​of the tips of the two current probes; The correction factor generation module is used to calculate the current probe correction factor K based on the geometric feature values ​​of the two current probes. s ;as well as, The resistance correction module is used to utilize the current probe correction factor K. s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

[0056] It is understood that the resistance measurement correction system provided in this embodiment of the invention, including the geometric feature recognition module, the correction factor generation module, and the resistance positive correction module, are used to execute each step of the resistance measurement correction method provided in this embodiment. Therefore, for a detailed description of the functions of the geometric feature recognition module, the correction factor generation module, and the resistance correction module, please refer to the description of the resistance measurement correction method section, which will not be repeated here.

[0057] Specifically, the geometric feature recognition module may include: A CCD imaging module is used to acquire topographic images of the tip portion of the needle containing the two current probes; An image analysis module is used to identify the geometric feature values ​​of the two current probes based on the topographic image.

[0058]

Example 2

[0059] That is, such as Figure 3 As shown, the correction method provided in this embodiment includes the following steps: S21, Obtain the geometric feature values ​​of the tips of the two current probes and the two voltage probes; S22, Based on the geometric feature values ​​of the two current probe tips, calculate the current probe correction factor K. s Furthermore, based on the geometric eigenvalues ​​of the two voltage probes, the voltage probe correction factor K is calculated. v ; S23, the sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and... S24, utilizing the current probe correction factor K sand the voltage probe correction factor K v The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

[0060] Research has shown that wear on the tip of a current probe has a much greater impact on resistance measurement results than wear on the tip of a voltage probe. Therefore, a correction factor K for the current probe is used. s Correcting the resistance measurement value ρ0 can significantly improve the accuracy of the measurement results. However, using current probe correction factors and voltage probe correction factors K... v At the same time, correcting the resistance measurement value ρ0 can further improve the accuracy of the measurement results.

[0061] In step S21, the equivalent radius, shape factor, and ionization rate of the voltage probe are determined using the same function as those of the current probe.

[0062] In step S22, the voltage probe correction factor K is calculated based on the geometric characteristic values ​​of the two voltage probes. v Specifically, it may include: Based on the geometric characteristic values ​​of the two voltage probes, the equivalent radius, shape factor, and eccentricity of the two voltage probes are calculated respectively; based on the shape factor and eccentricity of each voltage probe, their respective positional offset is calculated; and, by combining the positional offsets and the equivalent radius of the two voltage probes, the voltage probe correction factor K is calculated. v .

[0063] Specifically, the voltage probe correction factor K can be calculated using a preset second function. v The second function satisfies:

[0064] Wherein, β2 and β3 represent the positional offsets of the two voltage probes, respectively, obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two voltage probes. eq2 、r eq3 denoted by and s, respectively, represent the equivalent radii of the two voltage probes, and s represents the distance between two adjacent probes.

[0065] That is, after calculating β2 and β3 using monotonically increasing functions related to the shape factor and eccentricity of the voltage probe, the voltage probe correction factor K is then calculated according to the second function mentioned above. v .

[0066] Optionally, the monotonically increasing function related to the shape factor and eccentricity of the voltage probe satisfies: β∝m(k-1)+ne, where m and n are constants.

[0067] Based on the characteristics of the position offsets of two voltage probes, β2 and β3 are obtained using different monotonically increasing functions. That is, when calculating β2 and β3, different values are taken for m and n.

[0068] In step S24, specifically, the measured resistance value ρ0 can be substituted into the formula: ρ = K s × K v × ρ0 for calculation to obtain the corrected resistance value ρ.

[0069] As an example, the formula for calculating the voltage probe correction factor K v is:

[0070] where d, p, f, g, h, and j are all constants, 0 < d < 1, 0 < p < 0.5, 0 < f < 0.1, 0 < g < 0.5, 0 < h < 0.5, 0 < j < 0.1. The specific values of d, p, f, g, h, and j can be obtained through the following method: Establish contact surface models with different k and e. For the same set of shape parameters (k, e), systematically change the size ratio. Through the Laplace equation, calculate the exact potential distribution and solve for the true Kv. Fix a set of (k, e) to obtain the curve of Kv varying with the size ratio. Obtain the values of β2 and β3 when (k, v) is fixed, and obtain a set of (k, e)(β2, β3). Subsequently, use this method to obtain the (k, e)(β2, β3) data set. Use the least squares method to fit the relationship between the distributions of β2 and β3 and k and e to obtain the parameters d, p, f, g, h, and j.

[0071] Similarly, this embodiment also provides a resistance measurement correction system. Compared with Embodiment 1, the geometric feature recognition module is further used to obtain the geometric feature values of the tip parts of the two voltage probes; the correction factor generation module is further used to calculate the voltage probe correction factor K based on the geometric feature values of the two voltage probes v ; the resistance correction module is further used to, while using the current probe correction factor K s to correct the measured resistance value ρ0, also use the voltage probe correction factor K v to correct the measured resistance value ρ0.

[0072] It is understood that the resistance measurement correction system provided in this embodiment of the invention, including the geometric feature recognition module, the correction factor generation module, and the resistance positive correction module, are used to execute each step of the resistance measurement correction method provided in this embodiment. Therefore, for a detailed description of the functions of the geometric feature recognition module, the correction factor generation module, and the resistance correction module, please refer to the description of the resistance measurement correction method section, which will not be repeated here.

[0073] Similarly, in this embodiment, the geometric feature recognition module also specifically includes a CCD imaging module and an image analysis module. Unlike Embodiment 1, in this embodiment, the CCD imaging module is used to acquire a topographic image of the tip portion containing the two current probes and the two voltage probes; the image analysis module is used to identify the geometric feature values ​​of the two current probes and the two voltage probes based on the topographic image.

[0074] Based on the formulas in the examples above, the resistance measurement correction method and system provided in this embodiment will be illustrated below.

[0075] The statistical results of the equivalent radius, shape factor, and eccentricity e obtained based on the geometric eigenvalues ​​of probes 2 and 3 are shown in Table 4. Table 4

[0076] Based on Table 4 and the formulas above, calculate β2, β3, and K respectively. v .

[0077] The statistical results for V, I, and S are shown in Table 3 above. V is the potential difference between probe 2 and probe 3, I is the current flowing through probe 1, and S is the probe spacing.

[0078] Based on Tables 3 and 4 and in conjunction with formulas Calculate the value of ρ.

[0079] The resistance of the standard sample was 0.0043 ohm·cm. The calculated resistance was 0.00357 ohm·cm. After correction using the method provided in this embodiment, the resistance was 0.004249 ohm·cm. The calculation process verified the influence of the contact area between the probe and the target object on the final resistance. The measured resistance was lower than the actual resistance, reducing the measurement error from 16.9% to 1.2%.

[0080] In summary, the resistance measurement correction method and system provided by the embodiments of the present invention include: acquiring the geometric feature values ​​of the tips of two current probes in a four-probe device; and calculating the current probe correction factor K based on the geometric feature values ​​of the two current probe tips.s The sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and the current probe correction factor K is used to... s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ. Using the resistance measurement correction method and system provided by this invention, even if the probe tip is worn, the resistance measurement result can be corrected in a timely manner, thereby improving the accuracy of the measurement results of the four-probe device.

[0081] Furthermore, it should be understood that although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments with equivalent changes, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the present invention shall still fall within the scope of protection of the present invention.

Claims

1. A resistance measurement correction method for correcting the resistance measurement results of a four-probe device, the four-probe device comprising two current probes and two voltage probes, characterized in that, The correction method includes: Obtain the geometric feature values ​​of the tips of the two current probes; Based on the geometric characteristic values ​​of the tips of the two current probes, the current probe correction factor K is calculated using the following formula. s : In the formula, δ1 and δ4 represent the equivalent offsets of the two current probes, respectively, and r eq1 、r eq4 Let represent the equivalent radii of the two current probes, s represent the distance between two adjacent probes, and z be an integer greater than or equal to 3. These are the coefficients of the two current probes, respectively; The sample resistance is measured using the four-probe device to obtain the resistance measurement value ρ0; and, Using the current probe correction factor K s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ.

2. The resistance measurement correction method as described in claim 1, characterized in that, The equivalent offset of the current probe can be obtained in the following way: Based on the geometric characteristic values ​​of the two current probes, the equivalent radius, shape factor, and eccentricity of the two current probes are calculated respectively; and, The equivalent offset of each current probe is calculated based on its eccentricity and shape factor.

3. The resistance measurement correction method as described in claim 2, characterized in that, δ1 and δ4 are obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two current probes.

4. The resistance measurement correction method as described in claim 1, characterized in that, The correction method further includes: Obtain the geometric feature values ​​of the tips of the two voltage probes; Based on the geometric feature values ​​of the two voltage probe tips, the voltage probe correction factor K is calculated. v ;as well as, Using the current probe correction factor K s While correcting the resistance measurement value ρ0, the voltage probe correction factor K is also used. v The measured resistance value ρ0 is corrected.

5. The resistance measurement correction method as described in claim 4, characterized in that, Based on the geometric characteristic values ​​of the two voltage probes, the voltage probe correction factor K is calculated. v include: Based on the geometric characteristic values ​​of the two voltage probes, the equivalent radius, shape factor, and eccentricity of the two voltage probes are calculated respectively. Based on the shape factor and eccentricity of each voltage probe, the respective positional offset is calculated; and, The voltage probe correction factor K is calculated by combining the position offset of the two voltage probes and the equivalent radius. v .

6. The resistance measurement correction method as described in claim 5, characterized in that, The voltage probe correction factor K is calculated using a preset second function. v The second function satisfies: Wherein, β2 and β3 represent the positional offsets of the two voltage probes, respectively, obtained by monotonically increasing functions related to the shape factor and eccentricity of each of the two voltage probes. eq2 、r eq3 denoted by and s, respectively, represent the equivalent radii of the two voltage probes, and s represents the distance between two adjacent probes.

7. The resistance measurement correction method as described in claim 2 or 5, characterized in that, The geometric characteristic values ​​include area A, perimeter P, and minimum moment of inertia I. min and maximum moment of inertia I max ; Calculate the equivalent radius r eq The function satisfies: The function that calculates the shape factor k satisfies: The function that calculates the eccentricity e satisfies: 。 8. The resistance measurement correction method as described in claim 4, characterized in that, Using K s and K v Correcting the resistance measurement value ρ0 includes: Substituting the measured resistance value ρ0 into the formula: ρ=K s × K v The corrected resistance value ρ is obtained by calculating ×ρ0.

9. A resistance measurement correction system for correcting the resistance measurement results of a four-probe device, the four-probe device comprising two current probes and two voltage probes, characterized in that, The correction system includes: A geometric feature recognition module is used to obtain the geometric feature values ​​of the tips of the two current probes; The correction factor generation module is used to calculate the current probe correction factor K based on the geometric feature values ​​of the two current probes. s ;as well as, The resistance correction module is used to utilize the current probe correction factor K. s The measured resistance value ρ0 is corrected to obtain the corrected resistance value ρ; The correction factor generation module calculates the current probe correction factor using the following formula: In the formula, δ1 and δ4 represent the equivalent offsets of the two current probes, respectively, and r eq1 、r eq4 The two current probes are respectively represented by their equivalent radii, s represents the distance between two adjacent probes, and z is an integer greater than or equal to 3, which are the coefficients of the two current probes respectively.

10. The resistance measurement correction system as described in claim 9, characterized in that, The geometric feature recognition module is also used to obtain the geometric feature values ​​of the tips of the two voltage probes; The correction factor generation module is also used to calculate the voltage probe correction factor K based on the geometric feature values ​​of the two voltage probes. v ; The resistance correction module is also used to utilize the current probe correction factor K. s While correcting the resistance measurement value ρ0, the voltage probe correction factor K is also used. v The measured resistance value ρ0 is corrected.

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