Dimming, condensing and diverging light device or film based on total reflection

Abstract

The invention provides a light-dimming, light-condensing and light-diffusing device or film based on total reflection, which comprises a light-emitting chip or fluorescent powder or quantum dots or nano scattering particles or micron scattering particles or Raman to-be-detected substances or micro-nano scattering particles or Raman to-be-detected substances, the reflecting surface is positioned at the bottom of the device or the reflecting surface is positioned at the bottom and the side surface of the device or the reflecting surface is positioned at the lower part of the bottom and the side surface of the device; the height of the inclined device is larger than the specific height, the to-be-acted substance is located at the specific height in the device and located at the bottom of the device, and the half angle of light needing to be adjusted is larger than the inclined plane included angle of the device by-90 degrees. According to the utility model, the light-emitting angle of the light-emitting chip is reduced or enlarged by combining reflection and multi-time total reflection lossless reflection light in the device, and the device has the advantages of simple structure, capability of focusing or diffusing light, good compatibility and the like.

Description

Technical Field

[0001] This field relates to optics, and more particularly to a dimming, focusing, or radiating light device or film based on total internal reflection. Background Technology

[0002] New display technologies are currently very popular, with large amounts of capital invested in this field every year. Among them, Mini-LED+LCD technology is developing rapidly, with its market penetration rate increasing by leaps and bounds each year. Compared with side-emitting technology, this technology has the advantages of high efficiency and low cost. However, since it uses LCD technology, it requires a light-diffusing film to uniformize the display effect and increase the viewing angle. However, the light loss of the light-diffusing film is relatively large, ranging from 40% to 70%. In order to reduce the light-to-light conversion loss of the light-diffusing film, a new type of light-diffusing film is needed.

[0003] Furthermore, since the above technical route uses liquid crystal + polarizer, the polarizer is suitable for polarized light. However, since only about half of the light emitted by ordinary LEDs is polarized, a lot of light and light energy will be wasted when polarized light passes through, which reduces the electro-optical conversion efficiency of this technology. Therefore, a new type of light-emitting device, quantum dot film, or phosphor film that can generate more polarized light is needed.

[0004] Currently, when using mobile phones or computers in crowded places such as airports, train stations, or trains, users are easily spied on. The transmittance of current spyglass screen protectors is very low, resulting in low light intensity for users. Studies have shown that if the illumination is too low when looking at things, it can easily lead to glaucoma or myopia. Therefore, there is a need to invent a small-angle anti-spy display light source that can prevent spying by using a small angle of light source, while avoiding light loss. As a result, there is currently a lack of small-angle light-emitting devices.

[0005] Another technological route for new displays is to use the Micro-LED + quantum dot film approach. This approach can achieve displays with lower precision. However, since the light-to-light conversion efficiency of quantum dot films is currently very low, a new type of quantum dot film or fluorescent film with high light-to-light conversion efficiency is needed to reduce the light-to-light loss of quantum dot films or fluorescent films.

[0006] Currently, another rapidly developing market in new displays is AR (Augmented Reality) displays. When using Micro-LED arrays as the light source, the large light emission angle of Micro-LED chips or devices, coupled with the fact that AR often uses waveguides, means that the light emission position of the chips is mostly in the temples of the glasses, far from the mirror surface of the display. If the light emission angle of the Micro-LED chips is not adjusted, a large amount of light will be wasted by coupling to the middle of the mirror surface. Although the Micro-LED technology route for AR has a higher electro-optical conversion efficiency than traditional LCD, the overall electro-optical utilization rate of the Micro-LED technology route for AR is still very low. Currently, most of the electro-optical conversion efficiencies are less than 10%, with most of the light being wasted. It is necessary to adjust the light emission angle of the Micro-LEDs and improve the coupling efficiency between the chips and the waveguides. Therefore, a high-efficiency Micro-LED packaged dimming device that can focus light is needed.

[0007] For Micro-LED technology that uses direct pixel display, the field of view needs to be adjusted according to the application scenario. For example, outdoor displays, conference displays, mobile phone displays, computer displays, and television displays have different requirements. Therefore, appropriate dimming devices or dimming films are needed to achieve the corresponding chip light emission angle.

[0008] Currently, for bulk materials or materials with large particles, Raman scattering has a very low Raman scattering intensity, and the test detector is far from the Raman scattering position, resulting in very low intensity of Raman scattered light collected by the detector. In order to improve the sensitivity of Raman scattering test, some optical design of the material is required to achieve higher Raman light collection efficiency and improve the accuracy of Raman detection.

[0009] Currently, almost all lenses exhibit chromatic aberration, resulting in poor imaging quality. Some solutions utilize metalenses, but due to their complex manufacturing process and the fact that most metasurface lenses are only suitable for specific situations, there is a lack of universal, simple, and low-cost light-gathering and light-diffusing devices to replace current convex and concave lenses.

[0010] Currently, the optical distribution of ultraviolet LEDs is a Lambertian distribution. As the distance from the light source increases, the ultraviolet intensity decreases sharply. To achieve long-distance sterilization, sterilization robots for greenhouse plants have emerged. However, these robots have poor compatibility. Their sterilization light source is an inverted concave structure, with the lower opening of the concave structure enclosing the plant. The ultraviolet light source inside the concave structure sterilizes the plant. Because the concave opening is fixed, the concave light source does not change as the plant grows, resulting in varying sterilization efficiency at different stages. To achieve better efficiency, nearly parallel ultraviolet light emission is needed. This allows for a larger concave opening. Due to the nearly parallel emission, the sterilization effect will not change significantly at different distances from the concave light-emitting surface, resulting in a better structure that is compatible with different growth stages and plant sizes, thus broadening its application scenarios and increasing its compatibility. Furthermore, current methods for UV sterilization and disinfection in air conditioners are ineffective. While some solutions utilize parallel-emitting UV light for air sterilization, such light sources are currently lacking. This may be because organic materials do not transmit UV light effectively and still absorb it. Some UV-transmitting organic materials are also quite brittle, making UV encapsulation challenging. Additionally, while fluorinated organic materials that transmit UV light can be used as encapsulation materials for UV devices, near-parallel-emitting UV light sources are currently unavailable.

[0011] Currently, automotive head-up display (HUD) systems are prone to having their display chips burned by sunlight due to the reversed light path. To solve this problem, a dimming film with an irreversible light path, one side focusing light and the other reflecting light, is needed.

[0012] In view of this, there is an urgent need to design a dimming, focusing, and diverging light device or film based on total internal reflection in order to overcome the shortcomings of existing quantum thin films or fluorescent thin films with low light-to-light conversion efficiency, existing Micro-LED chips with large light emission angles that cannot meet all display application scenarios, the low Raman scattering light collection efficiency, the dispersion of ordinary lenses, the low proportion of polarized light in ordinary display light sources, the low efficiency of existing anti-peeping devices for mobile phones or computers, and the screen burn-in of HUD systems under sunlight, among many other shortcomings. Summary of the Invention

[0013] To address the aforementioned technical problems, a dimming, focusing, and radiating light device or film based on total internal reflection is proposed. This device includes a light-emitting chip, phosphor, quantum dot, nano-scattering particles, micro-scattering particles, Raman analyte, micro-nano scattering particles, or Raman analyte; a reflective surface located at the bottom of the device, or a reflective surface located at the bottom and sides of the device, or a reflective surface located at the lower part of the bottom and sides of the device; a device with an inclined outer surface at a specific angle; and a device with different area values ​​for the bottom and top surfaces. The height of the inclined device is greater than a specific height, and the light-emitting chip, phosphor, quantum dot, micro-nano scattering particles, or Raman analyte is located at a specific height inside the device and at the bottom of the device. The device is a dimming component, requiring adjustment of the half-angle of the light. Adjusting the light-to-light conversion efficiency requires adjusting the half-angle of the light to be greater than |the angle between the tilt surfaces of the device and -90 degrees|, and the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte must be inside the device; or a specific number of devices with different tilt angles are used stacked one on top of the other, with the top of the lower device overlapping the bottom of the adjacent upper device, and the bottom of the upper device having no reflective surface, and without any light-emitting chip, phosphor, quantum dot, nano-scattering particles, micron-scattering particles, or Raman analyte; the number of light-emitting chips, phosphors, quantum dots, nano-scattering particles, micron-scattering particles, or Raman analytes must be greater than or equal to 1.

[0014] Furthermore, the reflective surface located at the bottom of the chip is the bottom surface, or the reflective surface is the bottom surface and the outer surface of the device not exceeding a specific height surrounding the light-emitting chip, phosphor, quantum dot, nano-scattering particle, micron-scattering particle, Raman analyte, micro-nano-scattering particle, or Raman analyte position; the light-emitting chip is an LED or LD, located at the bottom of the chip, or located on the outer surface of the device not higher than a specific height (this height is greater than or equal to twice the specific height of the light-emitting chip, phosphor, quantum dot, nano-scattering particle, micron-scattering particle, Raman analyte, micro-nano-scattering particle, or Raman analyte); the reflective surface is a metal mirror, DBR, photonic crystal, or a transparent material with a higher refractive index than the device, or a transparent material with a lower refractive index than the device; the device is transparent, with a transmittance greater than 60%.

[0015] Furthermore, the device is characterized in that the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte is located at a specific height inside the device and at the bottom of the device. This specific height is calculated as the distance from the bottom surface multiplied by 2, which is less than the distance from the center of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte to the nearest side of the device at the same height, minus the distance from the center of the corresponding light-emitting chip, phosphor, quantum dot, nano-scattering particle, micro-scattering particle, Raman analyte, or micro / nano scattering particle, or Raman analyte to its outermost edge at the same height multiplied by the cotangent of the total internal reflection angle. At this specific height, the projected area of ​​the light-emitting cone of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte on the bottom surface is less than 1 / 10 of the bottom surface area. The height of the tilted device is greater than this specific height, which is greater than or equal to the height at which the light emitted or scattered by the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte needs to be regulated and reflected at least within the device. The device also has a transparent light-emitting surface with a specific refractive index at the top. The refractive index of this light-emitting surface material is less than, greater than, or equal to the refractive index of the transparent material in the device. The smaller refractive index here will reduce the reflectivity when light is emitted from the device into the air, thereby improving the light efficiency.

[0016] Furthermore, in devices with inclined outer surfaces at a specific angle, the outer surface is a frustum with different upper and lower planes, or the N sides of a truncated N-sided pyramid, where N is approximately equal to 3; devices with a narrow base and a high and wide height are either truncated cones or frustums of a truncated N-sided pyramid, where N is approximately equal to 3.

[0017] Furthermore, a total internal reflection-based focusing device includes such a total internal reflection-based dimming device; it also includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface greater than 90 degrees and less than or equal to 95 degrees or / and greater than 95 degrees and less than or equal to 100 degrees or / and greater than 100 degrees and less than or equal to 110 degrees or / and greater than 110 degrees and less than or equal to 120 degrees; wherein the device has a bottom surface and a top surface with different area values, specifically a device with a smaller bottom surface and a larger top surface, and the half-angle of the focused beam is less than or equal to |the angle between the inclined surfaces of the device - 90 degrees|.

[0018] Furthermore, a total internal reflection-based diverging light device includes this total internal reflection-based dimming device; it also includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface being less than 90 degrees and greater than or equal to 85 degrees or / and less than 85 degrees and greater than or equal to 80 degrees or / and less than 80 degrees and greater than or equal to 70 degrees or / and less than 70 degrees and greater than 60 degrees; wherein the device has different area values ​​for the bottom and top surfaces, specifically a device with a larger bottom surface and a smaller top surface. Here, the particles are micron-sized, nano-sized, or micro-nano-sized. The light to be converged is incident from the bottom and then scattered at the location of the micron-sized, nano-sized, or micro-nano-sized particles. Due to the special location, the bottom surface has a transparent material with a high refractive index. Due to the influence of optical laws, very little light is emitted from the bottom surface, and most of the light is emitted from the front. After multiple total internal reflections, approximately parallel light is formed. Generally, the divergence angle of the emitted light is within 60 degrees. Because it is all total internal reflection, no dispersion occurs, which is the reason for the non-dispersion lens.

[0019] Furthermore, a quantum dot or phosphor film based on total internal reflection is provided, comprising such a total internal reflection-based dimming device; and also comprising a support film 7 located at the other end of the quantum dot or phosphor position; wherein the light source is a quantum dot or phosphor.

[0020] Furthermore, a total internal reflection-based focusing quantum dot or phosphor film is provided, comprising a total internal reflection-based focusing device; and a support film 7 located at the other end of the quantum dot or phosphor position; wherein the light source is a quantum dot or phosphor.

[0021] Furthermore, a divergent light quantum dot or fluorescent film based on total internal reflection is provided, comprising a divergent light device based on total internal reflection; and a supporting film located at the other end of the quantum dot or phosphor position; wherein the light source is a quantum dot or phosphor.

[0022] Furthermore, a total internal reflection-based dimming film includes such a total internal reflection-based dimming device; it also includes a support film located at the other end of the position of the micro / nano scattering particles or micron-scattering particles or nano-scattering particles; and the light source is a micro / nano scattering particle or micron-scattering particle or nano-scattering particle; and the reflective surface is a transparent material with a higher refractive index than the device.

[0023] Furthermore, a light-concentrating film based on total internal reflection includes a light-concentrating device based on total internal reflection; it also includes a support film located at the other end of the position of the micro / nano scattering particles or micron scattering particles or nano scattering particles; wherein the light source is a micro / nano scattering particle or micron scattering particle or nano scattering particle; and the reflective surface is a transparent material with a higher refractive index than the device.

[0024] Furthermore, a total internal reflection-based diverging light film includes a total internal reflection-based diverging light device; it also includes a support film located at the other end of the position of the micro / nano scattering particles or micron / nano scattering particles; and the light source is a micro / nano scattering particle or micron / nano scattering particle; and the reflecting surface is a transparent material with a higher refractive index than the device.

[0025] Furthermore, a Raman testing device based on total internal reflection includes a focusing device based on total internal reflection; wherein the device is divided into three parts, including an upper part, a lower part and a filling part; the filling part is a liquid or a curable liquid, transparent, with a transmittance of 50%; the dividing line between the upper and lower parts is above the bottom side reflector.

[0026] Furthermore, a light-diffusing and light-concentrating film for preventing sunlight backflow, comprising claim 12, wherein the projection of the micro / nano scattering particles or micron-scattering particles or nano-scattering particles on the short bottom surface is greater than or equal to the length of the bottom surface, or less than or equal to the length of the bottom surface but greater than or equal to 0.5 times the length of the bottom surface.

[0027] Beneficial effects: This patented dimming device based on total internal reflection reduces or increases the light emission angle of the light-emitting chip by combining reflection and multiple total internal reflections for lossless light reflection within the device. It also adjusts the wide-angle light emission of the chip to a specific small or large angle. The device features a simple structure, high reliability, and high-efficiency dimming. It can act as a focusing or diffused light source, functioning as a lens. Due to multiple reflections, the polarization of the emitted light is increased, making it suitable for high-efficiency display light sources. Because it can achieve small-angle light sources, it can be applied to anti-peeping display light sources. Simultaneously, it can achieve high-efficiency Raman scattering measurement. It boasts advantages such as low cost, good compatibility, good effect, and high efficiency. Attached Figure Description

[0028] Figure 1 A schematic diagram of a light-concentrating device based on total internal reflection;

[0029] Figure 2 A schematic diagram of a light-scattering device based on total internal reflection;

[0030] Figure 3 A schematic diagram of a Raman testing device based on total internal reflection, with internal curing.

[0031] Figure 4 A schematic diagram of a light-concentrating film based on total internal reflection.

[0032] Figure 5 A schematic diagram of a diverging light film based on total internal reflection.

[0033] Figure 6A schematic diagram of a Raman testing device based on total internal reflection.

[0034] Figure 7 A schematic diagram of a light-concentrating device based on total internal reflection, illustrating the principle of light focusing through primary total internal reflection;

[0035] Figure 8 A schematic diagram of a light-concentrating device based on total internal reflection, illustrating the principle of light focusing through multiple total internal reflections;

[0036] Figure 9 A schematic diagram of a light-concentrating device based on total internal reflection, illustrating the principle of light focusing through multiple total internal reflections;

[0037] Figure 10 A schematic diagram of a Raman testing device based on total internal reflection, with an illustration of total internal reflection.

[0038] Figure 11 A schematic diagram of a light-scattering device based on total internal reflection, with an illustration of total internal reflection.

[0039] Figure 12 Cross-sectional view of a focusing device with two dimming elements.

[0040] Figure 13 Concentrating device with two chips

[0041] Figure 14 A light-diffusing and light-concentrating film for preventing sunlight backflow.

[0042] Figure 15 A schematic diagram of micro / nanoparticle projection of a light-diffusing and light-concentrating film for preventing sunlight backflow. Figure 16 A schematic diagram of the calculated parameters of a Raman testing device based on total internal reflection. Detailed Implementation

[0043] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0044] Example 1

[0045] like Figure 1As shown, this invention provides a dimming, focusing, and radiating light device or film based on total internal reflection, comprising a light-emitting chip, phosphor, quantum dot, nano-scattering particles, micro-scattering particles, Raman analyte, micro-nano scattering particles, or Raman analyte 6; a reflective surface located at the bottom of the device, or a reflective surface located at the bottom and sides of the device, or a reflective surface located at the lower part of the bottom and sides of the device; a device 3 with an inclined outer surface at a specific angle; a device with a bottom surface 1 and a top surface 2 having different area values, and the ratio of the closest distance between the center of the top or bottom surface and the side surface 4 to the height of the inclined device is less than a specific value; and the light-emitting chip, phosphor, quantum dot, micro-nano scattering particles, or Raman analyte is located at a specific height H1 inside the device and at the bottom of the device. The device is a dimming component, requiring adjustment of the half-angle of light and adjustment of light-to-light conversion efficiency. The half-angle of light needs to be adjusted to be greater than |the angle between the inclined surfaces of the device - 90 degrees|. The symbols here are mathematically familiar, referring to the absolute value of the difference between the two. The angle of light adjustment is defined as follows: For example, if the undimmed LED beam angle is 120 degrees and you want to adjust it to 90 degrees, then the required adjustment angle is 120 - 90 = 30 degrees. In the case of focused light, the light to be adjusted refers to light that, without this device, is within the undimmed LED beam angle but outside the desired adjusted beam angle. For instance, light with a beam angle greater than 90 degrees but less than 120 degrees is considered light to be adjusted, and the half-angle of the light to be adjusted is 30 / 2. =15 degrees; for example, if the undimmed LED beam angle is 120 degrees and the desired beam angle is 170 degrees, in the case of divergent light, the light to be adjusted refers to light that, without this device, is located outside the undimmed LED beam angle but within the desired adjusted beam angle. For example, light with a beam angle greater than 120 degrees but less than 170 degrees is the light to be adjusted. Therefore, the angle to be adjusted is 170 - 120 = 50 degrees, and the half-angle of the light to be adjusted is 50 / 2 = 25 degrees. The light-emitting chip, phosphor, quantum dots, micro / nano scattering particles, or Raman analyte are located inside the device. By tilting the side of the device, the light to be adjusted undergoes multiple total internal reflections until the beam angle of the reflected light is adjusted to within the desired beam angle. Here, the half-angle of the light after device dimming = the half-angle of the light before dimming - the half-angle of the light to be adjusted. Therefore, according to this rule, if the desired beam angle is 5 degrees, the tilt angle of the device's side cannot exceed 5 degrees; otherwise, it will not be adjusted to this degree. Alternatively, a specific number of devices with different tilt angles can be stacked one on top of the other, with the top of the lower device overlapping the bottom of the adjacent upper device, and the bottom of the upper device having no reflective surface, and no light-emitting chip, phosphor, quantum dot, nano-scattering particle, micron-scattering particle, Raman analyte, micro-nano scattering particle, or Raman analyte.Three stacked tilting devices can also be used here. This structure can be achieved through molding or 3D printing. For example, 20 degrees at the bottom, 15 degrees in the middle, and 5 degrees at the top, because this reduces the thickness of the dimming device, making it suitable for ultra-thin dimming scenarios. If the required adjustment angle is 5 degrees, using all 5-degree angles would result in a relatively high height. Using multiple devices in series can significantly reduce the height of the device. Figure 12 The diagram shows that the lower device has a larger side angle, while the top device has a smaller side angle. This allows the lower device to quickly deflect light, but its larger side angle prevents it from focusing light at a small angle. The upper device, on the other hand, can focus light at an even smaller angle. One device reduces its thickness, while the other achieves focused light at a smaller angle. These three devices can also be connected end-to-end. The reflective surface can be located at the bottom of the device, on the bottom and sides, or at the lower part of the bottom and sides. The diagram shows one example of a reflective surface located at the lower part of the bottom and sides. The other two cases—reflective surfaces at the bottom and sides, or a reflective surface at the bottom—can be imagined by comparing the diagram. In the latter two cases, one only has a reflective surface on the bottom, while the other has reflective surfaces on both the bottom and sides. The difference between these three types corresponds to the different angles of total internal reflection occurring from the side. Different refractive indices correspond to different total internal reflection angles; the higher the refractive index, the larger the total internal reflection angle, and therefore the more light can be reflected. Thus, in terms of optical efficiency, the larger the area enclosed, the higher the optical efficiency. The number of light-emitting chips (or phosphors, quantum dots, nano-scattering particles, micro-scattering particles, Raman analytes, or micro / nano-scattering particles) should be greater than or equal to one. When the number of light-emitting chips is three or four, it can be used to fabricate MiP (Micro-Phase Injection) devices for displays, which are compatible with current processes and equipment precision, achieving higher efficiency. Figure 13 It is a focusing device containing two chips.

[0046] Furthermore, the reflective surface located at the bottom of the chip is the bottom surface, or the reflective surface is the bottom surface 51 and the outer surface 52 of the device at a specific height not exceeding the position surrounding the light-emitting chip, phosphor, quantum dot, nano-scattering particle, micro-scattering particle, Raman test material, micro-nano scattering particle, or Raman test material 6. This height limitation is to allow the sidewall to perform total internal reflection of the internal light to adjust the angle of the light, thus reducing dimming loss. Currently, lens dimming suffers from light loss due to reflection and refraction, but total internal reflection dimming does not produce light loss. The light-emitting chip is an LED or LD, located at the bottom of the chip's reflective surface, or located inside the device at a position not higher than a specific position H2, where H2 is greater than or equal to H1. The reflective surface is a metal mirror, DBR, photonic crystal, or a transparent material with a higher or lower refractive index than the device. The device is transparent, with a transmittance greater than 60%. The 1.2 times figure here is based on the typical device using silicone or photocurable adhesive with a refractive index of approximately 1.5, followed by a titanium dioxide coating of approximately 1.8.

[0047] Furthermore, the feature is that the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte is located at a specific height H1 inside the device and at the bottom of the device. The specific height H1 is the distance H1*2 from the bottom surface, which is less than the distance a from the center of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte to the nearest side of the device at the same height, minus the distance b from the center of the corresponding light-emitting chip, phosphor, quantum dot, nano-scattering particle, micro-scattering particle, Raman analyte, or micro / nano scattering particle, or Raman analyte to its outermost edge at the same height, multiplied by the cotangent of the total internal reflection angle c. The formula here is H1*2<(ab)*cot(c). Figure 16 The data shown here ensures that most of the light incident on the bottom surface cannot escape to the outside due to the influence of the total internal reflection angle. Furthermore, at this specific height, the projected area of ​​the light-emitting cone of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte on the bottom surface is less than 1 / 10 of the bottom surface area. Based on this data, it is estimated that less than 1 / 4 of the light incident on the bottom surface can escape to the outside. The height of the tilted device is greater than a specific height, which is greater than or equal to the height that allows the light emitted or scattered by the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte to be regulated to be reflected at least within the device. The "number of reflections" here refers to taking the absolute value of the difference, dividing it by another data point, and then rounding up to the nearest integer. This means that light emitted from a light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte within the device undergoes multiple reflections through the inner surface. The angle of reentry can be increased or decreased, and this adjustment is directly related to the number of reflections. More total internal reflections result in a larger or smaller angle of reentry, effectively controlling light concentration or scattering. Because it's total internal reflection, light loss is low, and light-to-light conversion efficiency is high. The height ensures that the angle of light after total internal reflection is within the sidewall's tilt angle, preventing further total reflection and adjusting the angle within this range. Furthermore, due to multiple total internal reflections, the polarization of the reflected light increases according to optical principles, producing more polarized light, suitable for light-emitting devices, quantum dot films, or fluorescent films used in displays. And because it's total internal reflection, there is no dispersion, avoiding the drawbacks of traditional lenses. The device material can be inorganic or organic. Generally, for ease of processing, it can be liquid, photocurable, or thermocurable, allowing the material or chip to be processed to be encapsulated inside. The top of the device also has a transparent light-emitting surface 2 (top surface) with a specific refractive index. The refractive index of this light-emitting surface material is less than, greater than, or equal to the refractive index of the transparent material in the device. If the refractive index is low, the thickness of this transparent light-emitting surface should be less than or equal to 100 micrometers, allowing light to be emitted at a larger angle. This will increase the angle at which light needs to be adjusted. For example, the top light-emitting surface material can be made of low-refractive-index silicone or silicon dioxide, with a refractive index of about 1.4. The device can use materials with higher refractive indices, such as high-refractive-index LED encapsulant, with a refractive index of about 1.7. This can be achieved through PECVD or other coating methods. If necessary, it can be combined with patterning techniques such as photolithography. The bottom high-refractive-index material can be gallium nitride or zinc oxide, with a refractive index of about 2.5, which can also be achieved through coating. The 0.9 times lower refractive index here refers to the use of a typical photocurable adhesive of about 1.5 and magnesium fluoride with a low refractive index of about 1.3, corresponding to commonly used materials. If the refractive index is low, the thickness of this transparent light-emitting surface should be less than or equal to 100 micrometers, allowing light to be emitted at smaller angles. If the refractive indices are equal, the thickness of this transparent light-emitting surface should also be less than or equal to 100 micrometers, allowing multiple dimming devices to be stacked together to reduce the overall device thickness. The transparent material in this device refers to the refractive index of the transparent material other than the light-emitting chip, phosphor, quantum dots, micro / nano scattering particles, or Raman analyte. If multiple transparent materials are present, it refers to the material with the highest refractive index among them.

[0048] Furthermore, in devices with inclined outer surfaces at a specific angle, the outer surface is a frustum with different upper and lower planes, or the N sides of a truncated N-sided pyramid, where N is approximately equal to 3; devices with a narrow base and a high and wide height are either truncated cones or frustums of a truncated N-sided pyramid, where N is approximately equal to 3.

[0049] like Figure 1 Furthermore, a total internal reflection-based focusing device includes such a total internal reflection-based dimming device; it also includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface greater than 90 degrees and less than or equal to 95 degrees or / and greater than 95 degrees and less than or equal to 100 degrees or / and greater than 100 degrees and less than or equal to 110 degrees or / and greater than 110 degrees and less than or equal to 120 degrees; wherein, the device has a bottom surface and a top surface with different area values, specifically a device with a smaller bottom surface and a larger top surface, and the half-angle of the focused beam needs to be less than or equal to |the angle between the inclined surfaces of the device - 90 degrees|. The reason for this less than or equal to is that only when this formula is satisfied can it be guaranteed that angles greater than this absolute value can be totally reflected by the side, and then the angle after reflection satisfies the half-angle of the focused beam. Here, half-angle refers to half of the angle of the focused beam. Because the bottom is narrow and has a high refractive index, the light emitted from the chip is limited by the total internal reflection angle. If gallium nitride (GaN) is used, with a refractive index of approximately 2.5, then according to optical laws, the light emitted from the bottom surface accounts for about 4% of all light emitted towards the bottom, and the light emitted from the sides accounts for about 4%. Therefore, most of the light is focused upwards through total internal reflection, achieving a converging effect. Simultaneously, because of total internal reflection, there is no light loss, resulting in high focusing efficiency. Furthermore, because it is reflected light, more of the light emitted from the chip is converted into polarized light through reflection. With an increased proportion of polarized light, more light can pass through the polarizer during display, thus improving optical-to-optical efficiency and electro-optical conversion efficiency. This fully utilizes light and allows for adjustment of the beam angle, as well as improvements in optical-to-optical or electro-optical efficiency. Figure 7 and Figure 8 As shown, light at a large angle A1, after undergoing total internal reflection within the film, becomes light emitted at a small angle A2. This focusing device can be a light-emitting diode (LED), with the light-emitting chip located at the bottom of the device. It can be used in mobile phone and computer displays to achieve small-angle displays, preventing peeping, and without light loss, protecting the eyes and saving energy.

[0050] like Figure 2Furthermore, a total internal reflection-based diffusing light device includes such a total internal reflection-based dimming device; it also includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface being less than 90 degrees and greater than or equal to 85 degrees or / and less than 85 degrees and greater than or equal to 80 degrees or / and less than 80 degrees and greater than or equal to 70 degrees or / and less than 70 degrees and greater than 60 degrees; wherein the device has a bottom surface and a top surface with different area values, specifically a device with a larger bottom surface and a smaller top surface. Because the bottom is large and has a high refractive index, the light emitted from the chip is limited by the total internal reflection angle. If gallium nitride (GaN) is used, with a refractive index of approximately 2.5, then according to optical laws, the light emitted from the bottom surface accounts for approximately 4% of all light emitted from the chip towards the bottom, and the light emitted from the side of the bottom surface accounts for approximately 4% of the light emitted from the chip towards the side. Therefore, most of the light emitted towards the bottom undergoes total internal reflection upwards. Due to the larger side angle, the angle of the small-angle light emitted from the chip is adjusted to be larger. Because the side is tilted inwards, ... According to geometric principles, when the angle of light from a small angle increases to a certain extent, it will exit from the side and radiate in all directions, thus achieving the effect of light divergence. Because of total internal reflection, light loss is minimal. Furthermore, since it is reflected light, more of the light emitted from the chip is converted into polarized light through reflection. With an increased proportion of polarized light, more light can pass through the polarizer when used for display, and the beam angle of the display increases, thereby improving optical-to-optical efficiency and electro-optical conversion efficiency. This fully utilizes light and enables adjustment of the beam angle, as well as improvements in optical-to-optical efficiency or electro-optical efficiency. Figure 11 The displayed light pattern shows that this light-emitting device can totally reflect light at small angles and emit it from the side, achieving dimming from small to large angles. For example... Figure 11 The result demonstrates the process by which light rays from a small angle are adjusted to a large angle.

[0051] Furthermore, a quantum dot or phosphor film based on total internal reflection is provided, comprising such a total internal reflection-based dimming device; it also includes a support film located at the other end of the quantum dot or phosphor position; and the light source is a quantum dot or phosphor. The support film is transparent.

[0052] like Figure 4The intermediate material is a quantum dot or a fluorescent film. Furthermore, a light-concentrating quantum dot or fluorescent film based on total internal reflection is provided, which includes a light-concentrating device based on total internal reflection; it also includes a support film located at the other end of the quantum dot or phosphor position; and the light source is a quantum dot or phosphor. Because the bottom is narrow and has a high refractive index, the light used to excite the quantum dots or phosphors is incident from the bottom of the film. After the quantum dots or phosphors absorb the excitation light, the light emitted for display is emitted. Due to the limitation of the total internal reflection angle, if gallium nitride is used for the high refractive index, the refractive index is approximately 2.5. According to optical laws, it can be estimated that the light emitted from the bottom surface of the quantum dots or phosphors accounts for approximately 4% of all light emitted from the bottom surface, and the light emitted from the sides of the bottom surface accounts for approximately 4% of the light emitted from the chip to the sides. Therefore, most of the light is reflected upwards through total internal reflection, which can achieve the effect of focusing the light. At the same time, because it is total internal reflection, there is no light loss, so the focusing efficiency is high. Furthermore, because it is reflected light, more of the light emitted from the chip is converted into polarized light through reflection. With the increase in the proportion of polarized light, more light can pass through the polarizer when used for display, thus improving the optical-optical efficiency of the polarizer and the electro-optical conversion efficiency. This fully utilizes the light and enables the adjustment of the beam angle, as well as the improvement of optical-optical efficiency or electro-optical efficiency. This type of film can be applied to AR color display optical modules or HUD color display modules. Furthermore, this new display film can also be used in anti-spy phone displays because the small viewing angle will restrict the view of people nearby. Compared to current anti-spy films, it has the characteristic of no light loss and will not damage eyesight. The reason for its application in these areas is that these displays do not require a particularly large field of view, as their application scenarios do not necessitate it. If the field of view is too large, it may actually reduce light utilization efficiency and waste energy.

[0053] like Figure 5The middle material is a quantum dot or fluorescent film. Further, it is a total internal reflection-based divergent quantum dot or fluorescent film, which includes a total internal reflection-based divergent light-emitting device; it also includes a support film located at the other end of the quantum dot or phosphor position; and the light source is a quantum dot or phosphor. Due to the large bottom and high refractive index, light used to excite the quantum dots or phosphor, such as blue or violet light, is incident from the bottom of the film. After absorbing the excitation light, the quantum dots or phosphor emit light for display. Due to the limitation of the total internal reflection angle, if gallium nitride is used for the high refractive index (approximately 2.5), according to optical laws, the light emitted from the bottom surface accounts for approximately 4% of all light emitted towards the bottom surface, and the light emitted from the sides accounts for approximately 4%. Therefore, most of the light emitted towards the bottom surface undergoes total internal reflection upwards. The larger side angle allows for a greater adjustment of the angle of the small-angle light emitted from the chip. Since the side is tilted inwards, according to geometry, as the angle of the small-angle light increases to a certain extent, it becomes more perpendicular to the side, causing it to exit from the side and radiate in all directions, thus achieving light divergence. Due to total internal reflection, light loss is minimal. Furthermore, because it is reflected light, more of the light emitted from the chip is converted into polarized light through reflection. With an increased proportion of polarized light, more light can pass through the polarizer during display, and the beam angle of the display increases, improving both optical-optical efficiency and electro-optical conversion efficiency. This fully utilizes light, enabling adjustment of the beam angle and improvements in both optical-optical and electro-optical efficiency. This application scenario can be used in television displays, conference room displays, and outdoor large-screen displays, where a wide field of view is required.

[0054] Furthermore, a dimming film based on total internal reflection includes this dimming device based on total internal reflection; it also includes a support film located at the other end of the location of the micro / nano scattering particles; and the light source is the micro / nano scattering particles; and the reflective surface is a transparent material with a higher refractive index than the device. This transparent material can be gallium nitride, silicon carbide, or similar materials. This can be achieved through a coating process.

[0055] like Figure 4The intermediate material consists of micro / nano particles, micron-sized particles, or nanoparticles. Furthermore, it is a total internal reflection-based light-concentrating film, including a total internal reflection-based light-concentrating device; it also includes a support film 7, located at the other end of the location of the micro / nano scattering particles, micron-sized scattering particles, or nanoparticles; and the light source is a micro / nano scattering particle, micron-sized scattering particle, or nanoparticle; and the reflective surface is a transparent material with a higher refractive index than the device. The micro / nano particles can be titanium dioxide, silicon dioxide, silicon carbide, or sapphire, etc. The support film can be PMMA, silicone, PDMS, PS, TPU, etc. Its light-concentrating principle is the same as the aforementioned quantum dot film or light-concentrating device. The micro / nano particles are equivalent to quantum dots or light-emitting chips. This transparent material can be gallium nitride, silicon carbide, etc. It can be achieved through coating. Figure 9 As shown, the light at a large angle A1, after undergoing total internal reflection within the membrane, is programmed into the outgoing light at a small angle A2.

[0056] like Figure 5 The intermediate material consists of micro / nano particles, or micron-sized particles, or nanoparticles. Furthermore, it is a light-diffusing film based on total internal reflection, comprising a light-diffusing device based on total internal reflection; it also includes a support film 7 located at the other end of the micro / nano scattering particles, or micron-sized scattering particles, or nanoparticles; and the light source is a micro / nano scattering particle, or micron-sized scattering particle, or nanoparticle; and the reflective surface is a transparent material with a higher refractive index than the device. This transparent material can be gallium nitride, silicon carbide, etc. It can be achieved through coating. Its light-diffusing principle is the same as the aforementioned light-diffusing quantum dot film or light-diffusing device. The micro / nano particles are equivalent to quantum dots or light-emitting chips. This dimming film can be placed in a HUD system. One end of the supporting film is close to the light-emitting side of the chip, and the other end, where the micro / nano scattering particles are located, is close to the projection glass. In this way, sunlight enters the micro / nano scattering particles and is scattered, and the emitted light is further scattered. Since the film is a certain distance from the chip, the amount of light that the chip can receive is greatly reduced, while the light emitted from the chip is focused, improving the utilization rate of the chip's display light. Figure 4 and Figure 5 The dimming component is tightly bonded to the support film, with no gaps in between.

[0057] like Figure 3 or Figure 6Furthermore, a Raman testing device based on total internal reflection includes a total internal reflection-based focusing device 8. The device is divided into three parts: an upper part 81, a lower part 82, and a filling part 83. The filling part is a liquid or a curable liquid, such as a photocurable or thermocurable liquid, transparent with a transmittance of 50%. After encapsulation, the filling part can be cured by light or heat. The boundary between the upper and lower parts is above the bottom side reflector. The Raman analyte is located in the lower part. After the analyte is placed in the lower part, it is filled with the liquid and then bonded to the upper part. The filling part is a liquid or a curable liquid to reduce light loss and improve light utilization. The liquid can be water, a photocurable adhesive, or a thermocurable adhesive, etc. Photocurable adhesives are readily available and can be obtained through various sales platforms. The upper and lower parts can be supported by a membrane made of materials such as PMMA, silicone, PDMS, PS, TPU, etc. The structure can be formed using a mold. The lower part can be a concave, inverted frustum, with a concave center. The test material is placed inside this concave frustum, and then a photocurable material is poured in, allowing it to flow and level along the upper edge of the frustum. The upper part can also be an inverted frustum, which fits perfectly within the concave inverted frustum of the lower part. After light irradiation, both parts are cured to form an inverted frustum Raman spectroscopy device. This device is then placed under the microscope on a Raman spectroscopy instrument. The excitation laser is incident along the top surface of the inverted frustum using the Raman spectroscopy instrument. Figure 10The thick lines at the top are the excitation laser beams, irradiating the substance to be detected within the detector. In the above steps, the photocuring liquid can be replaced with other liquids, such as water, transparent oil, or other transparent organic or inorganic liquids. If using a liquid, the top and bottom parts must be aligned, and movement should be careful to avoid spillage and maintain a good state. Air bubbles should not be incorporated into the liquid. In this case, the bottom and surrounding surfaces can be made of a high-refractive-index transparent material, such as silicon carbide, gallium nitride, or zinc oxide. The film can be deposited using methods such as PECVD. If the bottom and surrounding surfaces are made of a high-refractive-index transparent material such as gallium nitride... Assuming a refractive index of approximately 2.5, according to optical laws, it can be calculated that about 4% of the total light incident on the bottom surface can be emitted. Therefore, most of the light is reflected back into the device, achieving a high reflection efficiency. Due to the high refractive index material of the outer layer, the side of the bottom surface near the bottom also emits very little light; most of the light is totally internally reflected, resulting in multiple total internal reflections. Due to the influence of the side angle, the emission angle eventually changes, undergoing total internal reflection upwards along the device's slope, and then the emission angle gradually approaches perpendicularity to the top surface. This allows light to exit from the top surface, resulting in nearly parallel light. The light scattered by the Raman laser from the material being tested in all directions is converged and emitted nearly parallel from the top surface, entering the Raman detector above for detection. Assuming the spot diameter of the Raman laser beam received by the material is approximately 30 micrometers, the distance between the detector and the material is 600 millimeters, and the diameter of the detector chip is 0.1 millimeters, based on optical laws and geometry, it can be estimated that, theoretically, this device can amplify the light from a distant source by approximately 300 million times. This Raman detection device can also be used for ultraviolet light emission devices. In this case, the filling part consists of an ultraviolet chip and a liquid filling, which can be achieved using a solid-liquid combination method. For example, the outer shell of the device could be made of materials such as gallium oxide, and the interior of the device could be filled with water. Figure 10 The diagram shows that when the excitation laser passes through the top and enters the Raman test device, it generates Raman scattered light. The scattered light is emitted in all directions. In traditional detection methods, only a small portion of the light enters the detector. However, after the light is collected by the Raman test device of this patent, a lot of the light from the sides and the light that is emitted towards the bottom is also collected and totally reflected back to the top, which greatly enhances the detection intensity.

[0058] Furthermore, a light-diffusing and light-concentrating film for preventing sunlight backflow, comprising claim 12, wherein the projection of the micro / nano scattering particles or micron-scattering particles or nano-scattering particles on the short bottom surface is greater than or equal to the length of the bottom surface, or less than or equal to the length of the bottom surface but greater than or equal to 0.5 times the length of the bottom surface.

[0059] like Figure 14 This section simplifies the drawing of the film used to prevent chip burn-out in HUDs. It primarily shows the light diagram of this film. 9 represents the sun (drawn slightly flattened due to the height of the image, to fit on one page), and 10 represents the display chip. The diagram shows how parallel sunlight travels from the top. When some light hits the side of the film, the angle of the reflective surface causes the parallel light to diffuse to both sides. Light that doesn't reach the sides is scattered in all directions by the scattering material near the top. After continuous reflection within the device, the angle increases, and the light exits from the side. This prevents most sunlight from entering the HUD chip, thus avoiding heat damage from sunlight backflow and protecting the chip. The light emanating from the chip enters from the bottom. Since most HUD chips are LED light sources, the emitted light has a certain angle. Most of the light is reflected from the side, reducing the light emission angle and enhancing the display effect. If the projection of micro / nano scattering particles, micron-sized scattering particles, or nano-sized scattering particles onto the short base surface is greater than or equal to the length of the base surface, direct sunlight on the HUD chip should be avoided. If the HUD chip employs better heat dissipation technology, allowing some direct sunlight on the HUD chip, then the projection of micro / nano scattering particles, micron-sized scattering particles, or nano-sized scattering particles onto the short base surface should be less than or equal to the length of the base surface and greater than or equal to 0.5 times the length of the base surface.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A dimming device based on total internal reflection, comprising a light-emitting chip, phosphor, quantum dot, nano-scattering particles, micro-scattering particles, Raman analyte, micro-nano scattering particles, or Raman analyte; a reflective surface located at the bottom of the device, or a reflective surface located at the bottom and sides of the device, or a reflective surface located at the lower part of the bottom and sides of the device; a device with an inclined outer surface at a specific angle; and a device having different area values ​​for the bottom and top surfaces; the height of the inclined device is greater than a specific height, and the light-emitting chip, phosphor, quantum dot, micro-nano scattering particles, or Raman analyte is located at a specific height inside the device and at the bottom of the device. The device is a dimming component, requiring adjustment of the half-angle of light and adjustment of light-to-light conversion efficiency. The half-angle of the light is greater than |the angle between the tilt surfaces of the device -90 degrees|, and the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte is inside the device; or a specific number of devices with different tilt angles are used stacked one on top of the other, with the top of the lower device overlapping the bottom of the adjacent upper device, and the bottom of the upper device has no reflective surface, and the upper device has no light-emitting chip, phosphor, quantum dot, nano-scattering particles, micron-scattering particles, or Raman analyte; the number of light-emitting chips, phosphors, quantum dots, nano-scattering particles, micron-scattering particles, or Raman analytes is greater than or equal to 1.

2. The dimming device based on total internal reflection according to claim 1, characterized in that, The reflective surface located at the bottom of the chip is the bottom surface, or the reflective surface is the bottom surface and the outer surface of the device not exceeding a specific height surrounding the light-emitting chip, phosphor, quantum dot, nano-scattering particle, micron-scattering particle, Raman analyte, micro-nano-scattering particle, or Raman analyte; the light-emitting chip is an LED or LD, and the reflective surface located at the bottom of the chip, or located on the outer surface of the device not higher than a specific height (this height is greater than or equal to twice the specific height of the light-emitting chip, phosphor, quantum dot, nano-scattering particle, micron-scattering particle, Raman analyte, micro-nano-scattering particle, or Raman analyte); the reflective surface is a metal mirror, DBR, photonic crystal, or a transparent material with a higher refractive index than the device, or a transparent material with a lower refractive index than the device; the device is transparent, and its transmittance is greater than 60%.

3. A dimming device based on total internal reflection according to claim 2, characterized in that, Furthermore, the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte are located at a specific height inside the device and at the bottom of the device. This specific height is calculated as the distance from the bottom surface multiplied by 2, which is less than the distance from the center of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particles, or Raman analyte to the nearest side of the device at the same height, minus the distance from the center of the corresponding light-emitting chip, phosphor, quantum dot, nano-scattering particle, micro-scattering particle, Raman analyte, or micro / nano scattering particle, or Raman analyte to its outermost edge at the same height multiplied by the cotangent of the total internal reflection angle. At this specific height, the projected area of ​​the light-emitting cone of the light-emitting chip, phosphor, quantum dot, micro / nano scattering particle, or Raman analyte on the bottom surface is less than 1 / 10 of the bottom surface area. The height of the tilted device is greater than this specific height, which is greater than or equal to the height required to ensure that the light emitted or scattered by the light-emitting chip, phosphor, quantum dot, micro / nano scattering particle, or Raman analyte is reflected at least within the device. The device also has a transparent light-emitting surface with a specific refractive index at the top, and the refractive index of the light-emitting surface material is less than, greater than or equal to, the refractive index of the transparent material in the device.

4. A dimming device based on total internal reflection according to claim 3, characterized in that, In a device with an inclined outer surface at a specific angle, the outer surface is either a frustum with different upper and lower planes, or the N sides of a truncated N-sided pyramid, where N is approximately equal to 3. A device with a narrow base and a high width, the device is a truncated cone, or a truncated N-shaped pyramid frustum, where N is approximately equal to 3.

5. A light-concentrating device based on total internal reflection, wherein, Includes claim 4; further includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface greater than 90 degrees and less than or equal to 95 degrees or / and greater than 95 degrees and less than or equal to 100 degrees or / and greater than 100 degrees and less than or equal to 110 degrees or / and greater than 110 degrees and less than or equal to 120 degrees; wherein the device has a bottom surface and a top surface with different area values, specifically a device with a smaller bottom surface and a larger top surface, and the half angle of the beam after focusing is less than or equal to |the angle between the inclined surfaces of the device - 90 degrees|.

6. A diverging optical device based on total internal reflection, wherein, Includes claim 4; further includes an inclined outer surface with a specific angle, wherein the specific angle is the angle between the inclined outer surface and the bottom surface that is less than 90 degrees and greater than or equal to 85 degrees or / and less than 85 degrees and greater than or equal to 80 degrees or / and less than 80 degrees and greater than or equal to 70 degrees or / and less than 70 degrees and greater than 60 degrees; wherein the device has a bottom surface and a top surface with different area values, specifically a device with a larger bottom surface and a smaller top surface.

7. A quantum dot or fluorescent film based on total internal reflection, wherein, It includes claim 1; it also includes a support film located at the other end of the quantum dot or phosphor position; and wherein the light source is a quantum dot or phosphor.

8. A focusing quantum dot or fluorescent film based on total internal reflection, wherein, It includes claim 5; it also includes a support film located at the other end of the quantum dot or phosphor position; and wherein the light source is a quantum dot or phosphor.

9. A divergent quantum dot or fluorescent film based on total internal reflection, wherein, It includes claim 6; it also includes a support film located at the other end of the quantum dot or phosphor position; and wherein the light source is a quantum dot or phosphor.

10. A dimming film based on total internal reflection, wherein, It includes claim 1; it also includes a support film located at the other end of the position of the micro / nano scattering particle or micron scattering particle or nano scattering particle; wherein the light source is a micro / nano scattering particle or micron scattering particle or nano scattering particle; and the reflecting surface is a transparent material with a higher refractive index than the device.

11. A light-concentrating film based on total internal reflection, comprising claim 5; further comprising a supporting film located at the other end of the position of the micro / nano scattering particles or micron scattering particles or nano scattering particles; wherein the light source is a micro / nano scattering particle or micron scattering particle or nano scattering particle; and the reflecting surface is a transparent material with a higher refractive index than the device.

12. A diverging light film based on total internal reflection, wherein, It includes claim 6; it also includes a support film located at the other end of the position of the micro / nano scattering particles or micron scattering particles or nano scattering particles; wherein the light source is a micro / nano scattering particle or micron scattering particle or nano scattering particle; and the reflecting surface is a transparent material with a higher refractive index than the device.

13. A Raman testing device based on total internal reflection, wherein, Includes claim 5; The device is divided into three parts: an upper part, a lower part, and a filling part; the filling part is a liquid or a curable liquid, transparent, with a transmittance of 50%; the dividing line between the upper and lower parts is above the bottom side reflector.

14. A light-diffusing and light-concentrating film for preventing sunlight backflow, wherein, Includes claim 12, wherein the projection of the micro / nano scattering particles or micron-sized scattering particles or nano-sized scattering particles onto the short base is greater than or equal to the length of the base, or less than or equal to the length of the base but greater than or equal to 0.5 times the length of the base.

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