Substrate processing apparatus and substrate processing method

Abstract

The present disclosure relates to a substrate processing apparatus and a substrate processing method, which can obtain high throughput and high processing uniformity between substrates when forming a film on a substrate. A substrate processing apparatus according to the present disclosure is provided with: a plurality of processing units each accommodating a substrate and rotating the accommodated substrate; a coating film forming unit that supplies a coating liquid to the surface of the substrate at a first processing unit among the processing units so as to form a coating film by the rotation; and a conveyance unit that conveys the substrate on which the coating film has been formed to the processing units other than the first processing unit so as to dry the coating film outside the first processing unit, and that sequentially conveys the substrate between the plurality of processing units so as to perform processing relating to the formation of the coating film in each processing unit.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] In the manufacturing process of semiconductor devices, a semiconductor wafer (hereinafter referred to as a wafer) serving as a substrate is transported within an apparatus to form a coating film by supplying a coating solution to the wafer, and to perform various treatments on the coating film. Patent Document 1 describes a substrate processing apparatus (coating and developing apparatus) for forming a resist film as a coating film and for forming a pattern on the resist film by development after exposure.

[0003] Prior art literature

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-83851 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for achieving high throughput and high processing uniformity between substrates when forming films on substrates.

[0008] Solutions for solving problems

[0009] The substrate processing apparatus disclosed herein includes:

[0010] Multiple processing units are provided, each of which houses a substrate and rotates the substrates it houses.

[0011] A coating film forming unit, wherein a first processing unit in the processing unit supplies a coating liquid to the surface of the substrate to form a coating film by the rotation; and

[0012] The transfer unit transfers a substrate with the coated film formed to the processing units other than the first processing unit to dry the coated film outside the first processing unit, and sequentially transfers the substrate between the plurality of processing units to perform processing related to the formation of the coated film in each processing unit.

[0013] The effects of the invention

[0014] This disclosure enables high throughput and high processing uniformity between substrates when forming films on substrates. Attached Figure Description

[0015] Figure 1 This is a top view of the substrate processing apparatus according to the first embodiment of this disclosure.

[0016] Figure 2 This is a longitudinal sectional front view of the substrate processing apparatus.

[0017] Figure 3 This is an explanatory diagram showing the transport path of the wafer for forming the resist film in the substrate processing apparatus.

[0018] Figure 4 This is a longitudinal sectional side view of the coating treatment section provided in the layer.

[0019] Figure 5 This is a longitudinal sectional side view of the coating treatment section provided in the layer.

[0020] Figure 6 This is a longitudinal sectional side view of the coating treatment section provided in the layer.

[0021] Figure 7 This is a top view showing the developing layer in the substrate processing apparatus.

[0022] Figure 8 It is a graph showing the rotational speed of the wafer used to form the resist film over time.

[0023] Figure 9 This is a top view of the substrate processing apparatus according to the second embodiment.

[0024] Figure 10 This is a longitudinal sectional front view showing the layer used for forming the resist film in the second embodiment.

[0025] Figure 11 This is a side view showing the hot plate in the layer that heats the wafer.

[0026] Figure 12 This is a top view showing the resist film forming layer with a pretreatment coating section.

[0027] Figure 13 This is a side view of a substrate processing apparatus configured as a coating device.

[0028] Figure 14 This is a top view showing a modified example of a layer used for forming a resist film. Detailed Implementation

[0029] [First Implementation Method]

[0030] Reference Figure 1 Top view and Figure 2The substrate processing apparatus 1, which is a first embodiment of the substrate transport apparatus of this disclosure, will be described using a front view. This substrate processing apparatus 1 is connected to an exposure machine D6 and performs the formation of a resist film on a wafer W, which is a circular substrate, and the development of the exposed resist film.

[0031] The substrate processing apparatus 1 is formed by connecting the carrier block D1, the first intermediate block D2, the processing block D3, the second intermediate block D4, and the interface block D5 in a horizontal row. In the following description, the direction along the column of blocks will be defined as the left-right direction, with the carrier block D1 side designated as the left side and the interface block D5 as the right side. Although the illustration is omitted, the exposure machine D6 is connected to the right side of the interface block D5. Furthermore, the description will be conducted with the carrier block D1 side designated as the left side, the second intermediate block D4 as the right side, the near-front side designated as the front side, and the inner side designated as the rear side when viewing from the left.

[0032] The carrier block D1 includes multiple platforms 11 arranged in a front-to-back direction, for example, four carriers, and a conveying mechanism 12 for loading and unloading wafers W onto carriers C placed on each platform 11. The carriers C are, for example, FOUP (Front Opening Unity Pod), conveying containers capable of holding multiple wafers W. The conveying mechanism 12 is located on a front-to-back extending conveying path 13, allowing access to the carriers C on each platform 11 for loading and unloading wafers W, and also enabling the transfer of wafers W to the tower T1 described later.

[0033] Furthermore, the conveying mechanism 12 and the conveying mechanisms 14, 21, 24, and 72 described later each have a base and a holding part for the wafer W that can move freely on the base. The base is capable of linear movement in the horizontal direction, rotation about a vertical axis, or lifting movement, or all of these, to enable the transfer of the wafer W and the conveying of the wafer W along the conveying path described later.

[0034] The first intermediate block D2 includes a conveying mechanism 14, a tower T1, an inspection module 15, a hydrophobication module 16, and a temperature adjustment module 17. A conveying path 18 extending laterally is formed at the center of the front and rear of the first intermediate block D2, and the conveying mechanism 14 is installed on this conveying path 18. On the left side of the first intermediate block D2, the tower T1 is positioned facing the conveying path 18 from the front. On the right side of the first intermediate block D2, two stacked bodies, consisting of the hydrophobication module 16 and the temperature adjustment module 17, are positioned to sandwich the conveying path 18 from the front and rear.

[0035] The inspection module 15 is a module that takes an image of the surface of the wafer W and sends it to the control unit 100 (described later) so that the control unit 100 can perform inspection. In the illustrated example, it is shown as being located on the left side behind the transport path 18. The hydrophobicity module 16 performs hydrophobicity treatment on the surface of the wafer W through gas treatment before the formation of the resist film. The temperature adjustment module 17 holds the wafer W before it is coated with resist and adjusts the temperature of the wafer W. For convenience, the temperature adjustment module 17 located on the front side is sometimes designated as 17A, and the temperature adjustment module 17 located on the rear side is designated as 17B. In addition, tower T1 and towers T2 to T5, T11, and T12 (described later) are constructed by overlapping multiple layers of modules for temporarily placing the wafer W. As a temporary placement module that constitutes each tower T, it can be configured as the temperature adjustment module 17, or it can be configured as a stage that does not have the function of adjusting the temperature of the placed wafer W.

[0036] Processing block D3 is formed by stacking multiple layers that carry modules for liquid processing, for example, it consists of four layers E1 to E4, numbered E1, E2, E3, and E4 from bottom to top. Layers E1 and E2 are for forming the resist film, and layers E3 and E4 are for developing. The structure of processing block D3 will be described in detail later.

[0037] The second intermediate block D4 includes a conveying mechanism 21, two towers T2, and a heating module 22. A conveying path 23 extending left and right is formed at the center of the front and rear of the second intermediate block D4, and the conveying mechanism 21 is installed on the conveying path 23. Multiple heating modules 22 are stacked to form a stack, and the stack is arranged left and right on the front and rear sides of the conveying path 23, respectively.

[0038] Heating module 22 is used to heat the wafer W to which the resist film has been formed (PAB: Pre-Applied Bake). The wafer W is placed on a hot plate and heated to a temperature of 100°C or higher. As will be described in detail later, the wafer W undergoes processing related to the formation of the resist film in the coating processing unit group located in processing block D3, and is transported from one side (left side) towards the second intermediate block D4, which is the other side (right side). Furthermore, heating module 22 is provided on the other side (right side) relative to this coating processing unit group. Due to this configuration, PAB can be quickly performed on the wafer W after the resist film has been formed.

[0039] Furthermore, towers T2 are respectively provided on the stacked body of the heating module 22 located on the left and front side and the stacked body of the heating module 22 located on the left and rear side. Sometimes the tower on the front side is referred to as T2A and the tower on the rear side is referred to as T2B.

[0040] Interface block D5 includes tower T4 and transport mechanism 24. Transport mechanism 24 and transport mechanism 21 of second intermediate block D4 access tower T3. Transport mechanism 24 transfers wafer W between tower T4 and exposure machine D6.

[0041] [Structure of the layer used for forming the resist film]

[0042] The layer E1 for forming the resist film in processing block D3 will be described. Layer E1 includes coating processing units F1 to F5 and transport sections 3 and 4. Coating processing units F1 to F5 are disposed at the center of the front and rear of layer E1, arranged in a column from left to right in the order of F1, F2, F3, F4, and F5. The front and rear sides of the column of coating processing units F1 to F5 respectively constitute transport paths 30 and 40 for wafer W. Transport sections 3 and 4 for transporting wafer W are respectively provided in transport paths 30 and 40.

[0043] During the formation of the resist film, the following processes are performed sequentially: spin coating based on the supply of resist as a coating solution to the wafer W; adjustment of the resist film thickness distribution on the surface of the wafer W; resist film thickness adjustment; drying of the resist film after thickness adjustment; removal of unwanted resist film formed at the periphery of the wafer W, known as EBR (Edge Bead Removal); and removal of the coating film attached to the back side of the wafer W based on cleaning. Furthermore, in this embodiment, each of these processes is accompanied by the rotation of the wafer W. The coating processing units F1 to F5 are configured to perform part of the series of processes related to the formation of the resist film described above. This series of processes is performed on the wafer W by sequentially transporting it through the coating processing units F1 to F5 by the transport units 3 and 4.

[0044] Coating processing units F1 to F5 include a cup 50 for receiving wafer W and a rotating holding disk 51 for holding wafer W within the cup 50 and rotating together with the held wafer W. Therefore, in layer E1, different parts of the above series of processes are processed separately in mutually divided spaces (spaces within the cup 50).

[0045] Coating processing units F1 to F5 each have two cups 50 to enable parallel processing of two wafers W, and the two cups 50 are arranged one in front of the other. Sometimes, the cup 50 on the front side of coating processing units F1 to F5 is referred to as cup 50A, and the cup 50 on the rear side is referred to as cup 50B. The five cups 50A and the five cups 50B are arranged in a straight line from left to right.

[0046] The transport section 3 consists of six transport mechanisms arranged in a row on the left and right, numbered 31, 32, 33, 34, 35, and 36 from left to right. The transport section 4 consists of six transport mechanisms arranged in a row on the left and right, numbered 41, 42, 43, 44, 45, and 46 from left to right. These transport mechanisms 31-36 and 41-46 are configured, for example, as transport mechanisms with multi-jointed arms, to transport the wafer W over a relatively long distance.

[0047] Figure 3 The transport of wafer W in layer E1 is shown by the dashed arrow. Wafer W from temperature adjustment module 17A in the first intermediate block D2 is sequentially transported through cups 50A in coating processing units F1 to F5, and then to tower T2A in the second intermediate block D4. This transport uses transport unit 3. Transport from temperature adjustment module 17A to coating processing unit F1, from coating processing unit F1 to F2, from coating processing unit F2 to F3, from coating processing unit F3 to F4, from coating processing unit F4 to F5, and from coating processing unit F5 to tower T2A are respectively performed by transport mechanisms 31, 32, 33, 34, 35, and 36. In this way, transport unit 3 forms a transport mechanism assembly for the handover of cups 50A on the front side of coating processing units F1 to F6.

[0048] Furthermore, the wafer W of the temperature adjustment module 17B in the first intermediate block D2 is sequentially transported through cups 50B in coating processing units F1 to F5, and then transported to tower T2B in the second intermediate block D4. This transport is performed using a transport unit 4. The transport from the temperature adjustment module 17B to the coating processing unit F1, from the coating processing unit F1 to F2, from the coating processing unit F2 to F3, from the coating processing unit F3 to F4, from the coating processing unit F4 to F5, and from the coating processing unit F5 to tower T2B are respectively performed by transport mechanisms 41, 42, 43, 44, 45, and 46. In this way, the transport unit 4 forms a transport mechanism group for the handover of cups 50B on the rear side of the coating processing units F1 to F6.

[0049] Next, the coating processing units F1 to F5 will be described, but before that, the series of processes described above related to the formation of the resist film will be described in more detail. First, the resist is supplied to the center of the wafer W, and the wafer W is rotated based on a first rotational speed R1 to allow the resist to spread to the periphery of the wafer W and form a resist film on the entire surface (upper surface) of the wafer W. That is, the above-described spin coating is performed to form a resist film on the entire surface (upper surface) of the wafer W.

[0050] The remaining resist is flung off the wafer W by rotating at a first rotational speed R1, and drying proceeds, thus preventing the resist from scattering or falling off the wafer W. In this state where the resist does not fall off but the formed resist film remains fluid, the rotational speed of the wafer W becomes a second rotational speed R2, which is smaller than the first rotational speed R1. As a result, a portion of the resist moves from the periphery to the center of the wafer W due to the surface tension of the resist, thus homogenizing the thickness distribution of the resist film within the surface of the wafer W.

[0051] Subsequently, wafer W is rotated at a third rotational speed R3, which is higher than the second rotational speed R2 and lower than the first rotational speed R1. The solvent in the resist film evaporates (dries), and the thickness of the resist film becomes the thickness corresponding to the third rotational speed R3. Then, the resist film is rotated at a fourth rotational speed R4, which is higher than the third rotational speed R3, and the drying of the resist film continues while maintaining the film thickness. Furthermore, in the processing example shown in the diagram below, the fourth rotational speed R4 is set to be higher than the third rotational speed R3. After the resist film has dried, a removal solution is supplied to the periphery of the wafer W rotating at a predetermined speed to remove the portions of the resist film formed at the periphery. That is, the previously described EBR is performed. Since drying is complete, penetration of the removal solution from the point where it is ejected from the wafer W towards the center of the wafer W is suppressed. Backside cleaning is performed by supplying a cleaning solution to the backside of the wafer W in parallel with this EBR.

[0052] The above processes are divided and performed separately in coating processing units F1 to F5, which can process wafer W in parallel. In coating processing unit F1, the process from spin coating to rotation at a second rotational speed R2 is performed. In coating processing unit F2, the process from rotation at the second rotational speed R2 to rotation at a third rotational speed R3 is performed. In coating processing unit F3, the process from rotation at the third rotational speed R3 to rotation at a fourth rotational speed R4 is performed. In coating processing unit F4, rotation based on the fourth rotational speed R4 completes the drying of the resist film. In coating processing unit F5, EBR and backside cleaning are performed.

[0053] When wafers W are processed in parallel in coating units F1 to F5, if wafer W, which has finished processing in one coating unit F, is still being processed in the next coating unit F, the removal of wafer W from one coating unit F must be temporarily suspended. If the suspension time between wafers W is inconsistent, the uniformity of processing may be reduced. To prevent this, in this example, the processing time L1 required in coating units F1 to F5 is set to the same time. This processing time L1 is the time from when wafer W is placed on the rotating holding disk 51 in an unrotated state until the rotation of the rotating holding disk 51 stops (i.e., the time until the transport mechanism can accept wafer W).

[0054] [Structure of the coating treatment section]

[0055] Next, referring to the longitudinal sectional side view Figure 4 The coating processing unit F1 will now be described. The coating processing unit F1 includes a housing 59 surrounding cups 50 (50A and 50B). Openings are provided on the front and rear side walls of the housing 59, through which transport units 3 and 4 enter the housing 59 and exchange wafers W between the transport units 3 and 4 and the cups 50. Gates 52 are provided at each opening, which close the openings except during the loading and unloading of wafers W, thus creating a sealed space inside the housing 59.

[0056] A rotating holding disk 51 is provided inside each cup 50 (50A, 50B) to hold the wafer W horizontally by adsorbing the center of the back side. The cup 50 surrounds the periphery of the wafer W held in this manner. The rotating holding disk 51 is connected to a rotating mechanism 53, which causes the adsorbed wafer W to rotate about a vertical axis and about a central axis. 54 in the figure shows three freely movable pins (only two are shown), which move freely up and down to transfer the wafer W between the rotating holding disk 51 and the conveying parts 3 and 4.

[0057] A drain port 55 is provided at the bottom of cup 50, and an exhaust pipe 56 is also provided. The exhaust pipe 56 is used to vent air from inside cup 50 during the processing of wafer W. A gas supply section 57 is provided at the top of housing 59. A downward airflow is formed within housing 59 by supplying clean air or inactive gas from the gas supply section 57 and by venting air from inside cup 50. Furthermore, by housing cups 50A and 50B within a common housing 59 and supplying gas into housing 59 from the common gas supply section 57 between cups 50A and 50B, deviations in the processing of wafer W processed between cups 50A and 50B are suppressed.

[0058] A nozzle 61 is provided inside the housing 59, and a standby section 62 is provided for the nozzle 61 to standby outside the cup 50. Figure 1(Not shown in the image), and a moving mechanism 63 that moves the nozzle 61. The moving mechanism 63 enables the nozzle 61 to move vertically and horizontally, allowing it to move between the standby section 62 and the wafer W housed in each cup 50. A resist supply mechanism 64, equipped with a pump, valves, etc., supplies resist to the nozzle 61, which is then sprayed downwards from the nozzle 61.

[0059] Figure 5 A longitudinal sectional side view of the coating processing unit F2 is shown. Unlike the coating processing unit F1, it lacks the nozzle 61, standby section 62, moving mechanism 63, and resist supply mechanism 64. Coating processing units F3 and F4 have the same structure as coating processing unit F2.

[0060] Figure 6 A longitudinal sectional side view of the coating processing unit F5 is shown. As a difference from the coating processing unit F1, nozzle 61 is connected to a removal liquid supply mechanism 65 instead of the resist supply mechanism 64. The removal liquid supply mechanism 65 has the same structure as the resist supply mechanism 64, except that it supplies the nozzle 61 with a solvent of the resist as a removal liquid for EBR, instead of the resist itself. Nozzles 61, a standby section 62, and a moving mechanism 63 are provided in each cup 50, and each nozzle 61 is individually supplied with removal liquid. Furthermore, each cup 50 of the coating processing unit F5 is provided with a back-side cleaning nozzle 66, which sprays cleaning liquid onto the outer side of the portion of the wafer W held by the rotating holding disk 51 on the back side. Nozzles 66 are connected to a cleaning liquid supply mechanism 67, which is configured similarly to the removal liquid supply mechanism 65, and supplies each nozzle 66 individually with a solvent of, for example, the resist as a cleaning liquid.

[0061] Layer E2 has the same structure as layer E1 described above. (See reference...) Figure 7 The developing layer E3 is described using a top view. A transport path 71 extending laterally is formed at the center of the front and rear of layer E3, and a transport mechanism 72 is provided on this transport path 71. Behind the transport path 71, multiple stacks formed by stacking multiple heating modules 73 are arranged horizontally. Each heating module 73 is a module for post-exposure baking (PEB), used for heating (post-baking) after development. Furthermore, in front of the transport path 71, multiple developing modules 74, four in the example shown, are arranged, each supplying developer to the wafer W. Towers T4 and T5 are provided at the right and left ends of the transport path 71, respectively, for transferring the wafer W between the first intermediate block D2 and the second intermediate block D3. Layer E4 has the same structure as layer E3.

[0062] [Structure of the Control Department]

[0063] return Figure 1 The following description is provided. A control unit 100 is provided in the substrate processing apparatus 1. The control unit 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing apparatus 1. The control unit 100 includes one or more control circuits to enable the execution of the steps of the program. Alternatively, the program can be recorded on a computer-readable storage medium and installed from the storage medium into the control unit 100. Commands (steps) are programmed into the installed program to output control signals from the control unit 100 to various parts of the substrate processing apparatus 1, and these control signals control the processing operations of the wafer W in each transport mechanism and each module.

[0064] [Wafer W transport path in the substrate processing apparatus]

[0065] In the substrate processing apparatus 1 described above, wafer W is transported to carrier C → tower T1 → hydrophobication module 16 and temperature adjustment module 17 (17A or 17B). Wafer W transported to temperature adjustment module 17A is sequentially transported through cups 50A of coating processing units F1, F2, F3, F4, and F5 in any of layers E1 and E2, and after undergoing processing related to the formation of the resist film, it is transported to tower T2 (T2A). Wafer W transported to temperature adjustment module 17B is sequentially transported through cups 50B of coating processing units F1, F2, F3, F4, and F5 in any of layers E1 and E2, and after undergoing processing related to the formation of the resist film, it is transported to tower T2 (T2B).

[0066] The wafer W, transported to tower T2, is then transferred to heating module 22 to receive PAB (photoresist film), and subsequently to exposure machine D6 via tower T3 for exposure. After exposure, the wafer W is sequentially transported via towers T3 and T5 to any layer among layers E3 and E4, and then to heating module 73 to receive PEB (photoresist film). Afterward, the wafer W is transferred to developing module 74 for developing. Here, the resist film is developed, forming a resist pattern. Then, after post-baking, the wafer W with the resist pattern is returned to carrier C via towers T4 and T1.

[0067] [Supplement to the structure of the substrate processing device]

[0068] The inspection module 15 can also be used to inspect wafers W that have just been removed from the carrier C before being processed and / or wafers W that are about to be returned to the carrier C after processing. The developing module can also be a module that supplies developing gas instead of developing solution for developing. Depending on the processing requirements, modules can be appropriately added to the substrate processing apparatus 1, and the processing of wafer W is not limited to all the modules described above. Furthermore, the layout and number of modules and transport mechanisms in the carrier block D1, first intermediate block D2, second intermediate block D4, and interface block D5 are not limited to the examples described above. The transport mechanism 72 can also be configured as a shared structure between layers E3 and E4. Furthermore, variations in the layout of the transport mechanism and coating processing section of the processing block D3 will be described in detail later. Additionally, the number of layers for forming the resist film and the number of layers for developing are not limited to the examples described above and can be appropriately set. As described later, layers for developing may also be omitted.

[0069] [Processes related to the formation of resist films]

[0070] Next, referring to the time variation of the rotational speed of wafer W and the dwell position of wafer W, Figure 8 The diagrams are used to explain in detail the processing in coating processing units F1 to F6 and the transfer between coating processing units F1 to F6. In addition, the example of wafer W transferred from temperature adjustment module 17A is used for explanation, but wafer W transferred from temperature adjustment module 17B is also processed and transferred in the same way.

[0071] When the conveying mechanism 31 transfers the wafer W from the temperature adjustment module 17A to the coating processing unit F1 and places it in the rotating holding disk 51 within the cup 50A (time t1), the wafer W begins to rotate at a first rotational speed R1, and resist is ejected from the nozzle 62 toward the center of the wafer W. The resist extends toward the periphery of the wafer W, forming a resist film on the wafer W. Meanwhile, the ejection of the resist stops. As the remaining resist is shed and the resist film dries, the rotational speed of the wafer W decreases (time t2) to a second rotational speed R2, and the uniformity of the resist film thickness distribution within the surface of the wafer W progresses.

[0072] Then, when the rotational speed of wafer W decreases and stops (time t3), wafer W is handed over to the transport mechanism 32 and transported to the coating processing unit F2. Then, when wafer W is placed and held in the rotating holding disk 51 within the cup 50A (time t4), wafer W begins to rotate again at a second rotational speed R2, and the uniformity of the resist film thickness distribution progresses. Then, the rotational speed of wafer W increases (time t5) to a third rotational speed R3, and the resist film dries and is adjusted to achieve the desired film thickness.

[0073] Subsequently, when the rotational speed of wafer W decreases and stops (time t6), wafer W is handed over to the transport mechanism 33 and transported to the coating processing unit F3. Then, when wafer W is placed and held in the rotating holding disk 51 within cup 50A (time t7), wafer W begins to rotate again, reaching the third rotational speed R3. The film thickness adjustment of wafer W progresses, and when the desired film thickness is achieved, the rotational speed of wafer W increases (time t8) to reach the fourth rotational speed R4. The drying of the resist film proceeds while maintaining the film thickness. Furthermore, in this example, the fourth rotational speed R4 is shown as a speed lower than the first rotational speed R1, but it could also be a speed higher than the first rotational speed R1.

[0074] Next, when the rotational speed of wafer W decreases and stops (time t9), wafer W is handed over to the transport mechanism 34 and transported to the coating processing unit F4. Then, when the wafer W is placed and held in the rotating holding disk 51 within the cup 50A (time t10), wafer W starts to rotate again at the fourth rotational speed R4, and drying proceeds further while maintaining the film thickness.

[0075] Then, when the rotational speed of wafer W decreases and stops (time t11), wafer W is handed over to the transport mechanism 35 and transported to the coating processing unit F5. Then, when wafer W is placed and held in the rotating holding disk 51 within cup 50A (time t12), wafer W begins to rotate at a predetermined speed. Removal fluid is sprayed from nozzle 61 for EBR onto the periphery of wafer W, and cleaning fluid is sprayed from nozzle 66 on the back side onto the back side of wafer W. Then, when the unwanted resist film at the periphery of wafer W is removed and the periphery on the back side is cleaned, the spraying of removal and cleaning fluids stops, and the rotation of wafer W stops (time t13). Then, wafer W is handed over to the transport mechanism 36 and transported to tower T2A.

[0076] The time L1 between times t1 and t3, t4 and t6, t7 and t9, t10 and t11, and t12 and t13 is the time L1 required for the processing performed in the coating processing units F1, F2, F3, F4, and F5, and these times are of the same length. The time between times t3 and t4, t6 and t7, t9 and t10, and t11 and t12 is the time required for each of the conveying mechanisms 31 to 35 to transport the wafer W, and these times are, for example, of the same length.

[0077] Furthermore, the cup 50, rotating holding disk 51, and rotating mechanism 53 constituting the coating processing unit F correspond to the processing section; the processing section of coating processing unit F1 corresponds to the first processing section; the processing section of coating processing unit F2 corresponds to the second processing section; and the processing section of coating processing unit F2 corresponds to the third processing section. The nozzle 61 and resist supply mechanism 64 supplying resist in coating processing unit F1 correspond to the coating film forming section.

[0078] [Advantages of this technology]

[0079] This explains why the wafer W is not subjected to a series of processes related to resist film formation, from resist supply to EBR and back-side cleaning, within a single cup 50, but rather a portion of each of these processes is performed in multiple cups 50 as described so far. If the aforementioned series of processes were performed within a single cup 50, to increase the throughput of the substrate processing apparatus 1, many cups 50 and many liquid supply systems to the cups 50 would be required. More specifically, the more cups 50 there are, the more nozzles for resist supply, piping supplying resist to these nozzles, valves installed on these piping, filters, and other equipment are needed. Similarly, the number of nozzles for EBR, nozzles for back-side cleaning, piping connected to these nozzles, valves installed on these piping, and other equipment is required as many times as there are cups.

[0080] Furthermore, when processing wafer W in numerous cups 50, cleaning fluid needs to be circulated through each pipe for cleaning before processing, or resist needs to be supplied and filled into the pipes supplying resist. Specifically, such operations are required during equipment startup and after maintenance such as filter replacement. Therefore, this can potentially require considerable effort and cost. In addition, due to the numerous pipes, variations in the length and deterioration condition of each pipe will manifest as individual differences within the cups 50, resulting in variations in the processing condition of wafer W in each cup 50. This may prevent sufficient improvement in the uniformity of processing between wafers W. If adjustments are made to prevent such individual differences, the associated effort must also be considered.

[0081] To prevent such adverse conditions, in the substrate processing apparatus 1, as described so far, a series of processes are divided into partial processes performed in each cup 50, and the resist, EBR removal solution, and cleaning solution for the back side of the wafer W are supplied only to a portion of the cups 50. By doing so, the aforementioned individual differences are eliminated, and processing with high uniformity between wafers W is performed. Furthermore, processing can be performed in parallel in each cup 50, thus increasing throughput.

[0082] Furthermore, for the cups 50A of each of the coating processing units F1 to F5 and the tower T2A immediately following the coating processing unit F5 to which the wafer W is transported, the transport mechanisms 31 to 36 are dedicated transport mechanisms for transporting the wafer W. That is, the structure is as follows: when the transport path from the cup 50A of the coating processing unit F1 to the tower T2A is designated as transport path A, a dedicated transport mechanism is provided for each section of transport path A. Similarly, the structure is as follows: when the transport path from the cup 50B of the coating processing unit F1 to the tower T2B is designated as transport path B, a dedicated transport mechanism (transport mechanism 41 to 46) is provided for each section of transport path B. Furthermore, the section referred to here refers to the area between locations other than the transport mechanisms where the wafer W can be placed.

[0083] By setting up dedicated transport mechanisms for each section of transport paths A and B, the transport of wafers W in other sections is prevented from being interrupted because wafer W is being transported in one section, thus preventing unnecessary congestion of wafers W within cup 50. Therefore, for multiple wafers W, deviations in the film deposition state between wafers W are more reliably prevented due to unwanted congestion in different coating processing sections or different congestion times in the same coating processing section. Furthermore, the reduction in throughput of the substrate processing apparatus 1 can be more reliably prevented.

[0084] However, a single transport mechanism can be shared across multiple sections within a range that avoids unnecessary congestion of wafer W. That is, two or more transport mechanisms are provided along the transport path from the cup 50 where wafer W is first transported during a series of processes related to the formation of a film of a certain type, to the destination cup 50 where wafer W is transported for subsequent and final processing related to that film formation process. Furthermore, these transport mechanisms can each transport wafer W in different sections. To give a specific example, the following conveying arrangement can also be set up: the conveying mechanism 31 performs conveying to the coating processing unit F1, conveying from the coating processing unit F1 to F2, and conveying from the coating processing unit F2 to F3, and the conveying mechanism 32 performs conveying from the coating processing unit F3 to F4, conveying from the coating processing unit F4 to F5, and conveying from the coating processing unit F5 to the tower T2.

[0085] Furthermore, in the example described above, the cup 50 that is first loaded onto the wafer W during the film formation process is a cup that supplies a resist as a coating solution, but it is not limited to cup 50 that supplies a coating solution in that way. Sometimes, as illustrated later, it is a cup 50 used for pretreatment for forming the film. Moreover, the transport path from the cup 50 that is first loaded onto the wafer W to the transport destination of the cup 50 where the final treatment is then performed, as described later as a second embodiment, sometimes includes the wafer W's mounting location other than the rotating holding disk 51 within the cup 50.

[0086] Furthermore, the cup 50 used for final processing in the described example is the cup 50 of the coating processing unit F5 that performs EBR and back-side cleaning processes, but it may also not perform EBR and back-side cleaning processes. Therefore, the cup 50 used for final processing may not be the cup 50 that performs EBR and back-side cleaning processes, or it may be the cup 50 that rotates at a fourth rotational speed R4 to dry the resist film.

[0087] Regarding the conveying mechanism constituting the conveying sections 3 and 4, it is shown as having a structure with a multi-joint arm, but it can also be configured as having a movable base and a holding section for the wafer W that can move freely on the base, like other conveying mechanisms in the substrate processing apparatus 1.

[0088] [Processing performed in each coating section]

[0089] In addition, in use Figure 8 In the example illustrated in the diagram, the coating processing units F1 and F2 perform a process to homogenize the film thickness distribution within the surface of the wafer W by rotating it at a second rotational speed R2. In other words, the homogenization process for the film thickness distribution is performed in coating processing unit F1, but not limited to, until the middle of the process. When transferring the wafer W from coating processing unit F1 to coating processing unit F2, it is acceptable as long as the resist does not fall off the wafer W. Furthermore, during the stage of rotating the wafer W at the second rotational speed R2, the resist does not fall off. Therefore, it is also possible to arrange for the wafer W to be transferred to coating processing unit F2 after the process of rotating at the second rotational speed R2 in coating processing unit F1 has ended. That is, it is also possible to arrange for the rotational speed in coating processing unit F2 to rapidly increase to a third rotational speed R3 after the rotation of the wafer W begins.

[0090] In this way, in the coating processing unit F1, after the rotation at a second rotational speed R2 for adjusting the film thickness distribution in the plane of wafer W begins, the rotation of wafer W is stopped and wafer W is removed. To clarify, the rotation at the second rotational speed R2 refers to the continued rotation for adjusting the film thickness distribution as described above. In detail, suppose that rotation at a first rotational speed R1 is performed in the coating processing unit F1, and the film thickness distribution adjustment begins in the coating processing unit F2. In this case, the rotational speed of wafer W is reduced from the state of rotating at the first rotational speed R1 in the coating processing unit F1 to stop the rotation of wafer W and remove wafer W. During this reduction in rotational speed, wafer W will momentarily rotate at the second rotational speed R2, but this rotation at the second rotational speed R2 during the reduction process is not included in the continued rotation.

[0091] Furthermore, in the coating processing unit F1, the length of the period of rotation at the second speed R2 after the initial rotation is initiated is arbitrary. Alternatively, the stage of rotation at the third speed R3 may occur after rotation at the second speed R2 in the coating processing unit F1. Additionally, in the previously described example, the switch from the third speed R3 to the fourth speed R4 is performed in the coating processing unit F3, but it is not limited to performing the switch in the coating processing unit F3 in that manner.

[0092] Additionally, a comparative example is provided, which describes a series of processes performed within a cup 50 from the start of wafer W's rotation until it stops rotating, from spin coating to EBR and backside cleaning. In this comparative example, the time L0 from the start of wafer W's rotation to its stop is divided equally into 5 parts by the number of coating processing units transporting wafer W. Alternatively, the operations performed during each period (divided by 5) can be assigned to coating processing units F1, F2, F3, F4, and F5. Furthermore, in each coating processing unit F1 to F5, the rotational speed of wafer W is increased from 0 and decreased to stop the wafer W from rotating at a predetermined speed. Since time is required for the rise and fall of the rotational speed, the processing time L1 (from the time the wafer W is placed on the rotating holding disk 51 until the rotation of the rotating holding disk 51 stops) for each coating processing unit F1 to F5 should be set slightly longer than L0 / 5 to accommodate the rise and fall of the rotational speed, and the same length should be set for each coating processing unit F1 to F5. Furthermore, when set in this way, since the time required for EBR and back-side cleaning is relatively short as described above, the coating processing unit F5, where the wafer W is finally transported, may include rotation at a fourth rotational speed R4 in addition to these operations, or it may include rotation at a fourth rotational speed R4 as described above.

[0093] Up to this point, it has been explained that the processing time L1 for wafers W in coating processing units F1 to F5 is set to be the same for each unit to prevent unwanted wafers W from being retained in coating processing units F1 to F5, but this is not a limitation. As described above, the EBR and back-side cleaning processes performed in coating processing unit F5, which is the last stage in coating processing units F1 to F5, can be completed in a relatively short time. Moreover, since coating processing unit F5 is the last stage, the removal of wafers W from coating processing unit F5 will not affect the loading and unloading of wafers W relative to coating processing units F1 to F4. Therefore, it is also possible to set the processing time L1 for wafers W to be the same between coating processing units F1 to F4, and the processing time L1 for wafers W in coating processing unit F5 is shorter than the processing time for wafers W in coating processing units F1 to F4. Furthermore, considering the potential time discrepancies in the wafer W transport time between transport mechanisms 31-35 and 41-45, the processing time L1 for wafer W may not be set to the same length between coating processing units F1-F4. For example, the difference in processing time L1 for wafer W between coating processing units F1-F4 may be set to converge to within 1 second.

[0094] Furthermore, in the above example, five coating treatment units, F1 to F5, are provided, dividing the series of processes from resist supply to EBR and backside cleaning into five parts. However, the number of coating treatment units provided is not limited to four. In other words, the number of divisions in the series of processes is arbitrary.

[0095] [Second Implementation]

[0096] Next, a second embodiment of the substrate processing apparatus 1 will be described, focusing on the differences from the first embodiment. In the second embodiment, the structures of layers E1 and E2 differ from those in the first embodiment. Similarly to the first embodiment, layers E1 and E2 also have the same structure in the second embodiment; therefore, referring to… Figure 9 Top view, Figure 10 The main view is used to illustrate the structure of layer E1, which is represented by it.

[0097] In layer E1, only coating processing units F1 to F5, namely F1, F2, and F5, are provided, and these coating processing units are arranged from left to right in the same manner as in the first embodiment. Furthermore, between coating processing units F2 and F5, two drying units 8 are arranged in a front-to-back configuration for the wafer W to stand by. As will be described in detail later, the drying unit 8 is a module used to mount the wafer W and dry the resist film whose thickness has been adjusted. Regarding the drying units 8, they are sometimes distinguished as 8A and 8B, located on the front and rear sides respectively. In a top view, the drying unit 8A and each cup 50A are arranged in approximately one row, and the drying unit 8B and each cup 50B are arranged in approximately one row.

[0098] [Structure of Drying Section 8]

[0099] The drying unit 8 includes a housing 81. Although not shown in the figure, the housing 81 of the drying unit 8, like the housing 59 of the coating processing unit F, is provided with a gate 52 for opening and closing the opening formed for moving the wafer W in and out. Moreover, except when necessary for moving the wafer W inside and outside the housing 81, the opening is closed by the gate 52, making the inside of the housing 81 a sealed space.

[0100] Inside the housing 81, a plurality of stages 82 capable of holding wafers W are arranged at intervals in the vertical direction (i.e., longitudinal direction). Furthermore, an exhaust mechanism 83, including a pump, is provided for venting the interior of the housing 81, thereby venting the interior of the housing 81 to a pressure lower than that on the outside of the housing 81.

[0101] [Transfer and processing of wafer W in the second embodiment]

[0102] In this second embodiment, the conveying unit 3 and the conveying unit 4 each have five conveying mechanisms (31-35, 41-45). The wafer W is conveyed by the conveying unit 3 in the following order: temperature adjustment module 17A → conveying mechanism 31 → coating processing unit F1 → conveying mechanism 32 → coating processing unit F2 → conveying mechanism 33 → stage 82 of drying unit 8A → conveying mechanism 34 → coating processing unit F5 → conveying mechanism 35 → tower T2A, and is conveyed to cup 50A in each coating processing unit in the same manner as in the first embodiment.

[0103] The wafer W is transported by the transport unit 4 in the following sequence: temperature adjustment module 17B → transport mechanism 41 → coating processing unit F1 → transport mechanism 42 → coating processing unit F2 → transport mechanism 43 → stage 82 of drying unit 8B → transport mechanism 44 → coating processing unit F5 → transport mechanism 45 → tower T2B. Similar to the first embodiment, it is transported to the cup 50B in each coating processing unit. In this way, the transport units 3 and 4 transport the wafer W between the cups 50 of different coating processing units F via the stage 82. Furthermore, the transport mechanisms 33, 34, 43, and 44 are configured such that, for example, by connecting to a lifting mechanism (not shown), the holding part (end effector) of the wafer W provided in these transport mechanisms can be raised and lowered, thereby enabling the transfer of wafer W between stages 82 at various heights.

[0104] In coating unit F1, spin coating is performed by rotating the wafer W at a first rotational speed R1, and film thickness distribution is adjusted by rotating the wafer W at a second rotational speed R2. In coating unit F2, film thickness adjustment is performed by rotating the wafer W at a third rotational speed R3, and this film thickness adjustment is completed in coating unit F2. The wafer W, after the film thickness adjustment has been completed, is placed on stage 82 for resist film drying. Therefore, in drying unit 8, a process equivalent to the resist film drying performed by rotating at a fourth rotational speed R4 in the first embodiment is performed. However, unlike the rotating holding disk 51, the stage 82 of drying unit 8 does not rotate. Therefore, the wafer W is kept stationary on stage 82 while the resist film is dried. Furthermore, the process in coating unit F5 is the same as the process described in the first embodiment.

[0105] [Advantages of setting up drying section 8]

[0106] The drying of the wafer W after film thickness adjustment requires a relatively long time. Therefore, for example, the time for placing the wafer W on the stage 82 in the drying section 8 is set to be longer than the processing time L1 required by each of the coating processing units F1, F2, and F5. In order to allow the wafer W, which is sequentially transported from the coating processing unit F2, to remain for a relatively long time to dry, and to keep the space occupied by the drying section 8 (proprietary floor area) from increasing, a structure with multiple stages 82 arranged longitudinally is provided as described above. In the second embodiment, by providing such a drying section 8, it is not necessary to arrange multiple cups that rotate the wafer W at a fourth rotational speed R4 in the left-right direction. Therefore, the left-right length of the substrate processing apparatus 1 can be shortened, which is preferred.

[0107] In this second embodiment, similar to the first embodiment, the increase in the liquid supply system can be prevented, thus improving the uniformity of processing between wafers W while achieving a high throughput of the substrate processing apparatus 1. Furthermore, in this second embodiment, the drying of the resist film after thickness adjustment is performed without rotating the wafer W, thus preventing the centrifugal force of rotation from affecting the shape of the resist film. Specifically, it prevents the resist from moving towards the periphery of the wafer W due to centrifugal force, thus preventing the radial thickness distribution of the wafer W from differing from the desired thickness distribution, or preventing the formation of bulges at the periphery of the wafer W, known as humps.

[0108] Furthermore, in the aforementioned drying section 8, the resist film is dried relatively quickly within the housing 81 by venting exhaust gas to reduce the pressure inside the housing 81 relative to the outside of the housing 81. This prevents a decrease in the throughput of the device and is therefore preferable. When promoting the drying of the resist film in this manner, it is not limited to setting a reduced-pressure atmosphere inside the housing 81. For example, a gas supply mechanism can be connected to the housing 81, supplying a low-humidity gas (atmosphere, inactive gas) into the housing 81 from this gas supply mechanism. This allows the relative humidity inside the housing 81 to be lower than the relative humidity outside the housing 81. This gas supply via the gas supply mechanism can also be used in conjunction with the formation of a reduced-pressure atmosphere via the aforementioned exhaust mechanism 83. The gas supply mechanism and the exhaust mechanism 83 constitute a drying promotion section that promotes drying.

[0109] The stage 82 described above does not have the function of adjusting the temperature of the placed wafer W, but it can also be configured to promote the drying of the wafer W by placing the wafer W on the stage, which has an adjustment section for adjusting the temperature of the stage as a drying promotion section. Figure 11 In the example shown, the following example is illustrated: a hot plate 85, which has a heating resistor 84 forming a drying promotion section, is arranged vertically as a stage to form a drying section 80 that replaces the drying section 8. The hot plate 85 is heated to a temperature lower than that of the hot plate of the heating module 22 performing PAB, specifically, for example, to a temperature below 100°C.

[0110] Furthermore, the stage in the drying section is not limited to being placed in a reduced pressure atmosphere, a low humidity atmosphere, or configured as a hot plate 85 as described so far. It can also be configured as a stage for naturally drying the resist film of the wafer W by placing the wafer W on it.

[0111] [Example of preprocessing]

[0112] Figure 12An example is shown in the second embodiment where a coating processing unit F0 is provided to the left of the coating processing unit F1. Furthermore, regarding the conveying mechanisms, they are similar to those in other figures, for example, constructed as multi-jointed arms, but are simplified in this figure. The coating processing unit F0 is a unit for performing pretreatment as part of the process related to the formation of the resist film, and is constructed similarly to the coating processing unit F1, except that a pretreatment liquid is sprayed from nozzle 61 to replace the resist. The cups 50A of the coating processing unit F0, including the cup 50A, and the drying section 8A are arranged in a row in top view; the cups 50B of the coating processing unit F0, including the cup 50B, and the drying section 8B are arranged in a row in top view. Moreover, the wafer W is conveyed in the order of coating processing unit F0 → F1 → F2 → drying section 8 → coating processing unit F5, and the wafer W is directed to the second intermediate block D4 for PAB processing. Figure 9 The examples described differ; conveyor units 3 and 4 are equipped with temperature adjustment modules 17A and 17B (in...). Figure 12 (Not shown) The conveying mechanisms 36 and 46 transport wafer W to the coating processing unit F1, and the conveying mechanisms 31 and 41 transport wafer W from the coating processing unit F1 to the coating processing unit F2.

[0113] The pretreatment liquid described above can be, for example, a modifying liquid that modifies the surface of the wafer W before the formation of the resist film to improve the wettability of the resist on that surface, or a protective film forming liquid that prevents the resist film from forming at the periphery of the wafer W to improve the adhesion of the resist film. When the pretreatment liquid is the aforementioned modifying liquid, it can be supplied to the entire surface of the wafer W by supplying it to the center of the rotating wafer W. When it is a protective film forming liquid, it can be supplied locally to the periphery of the rotating wafer W by supplying it to the periphery of the rotating wafer W. Examples of modifying liquids include diluents and acidic solvents.

[0114] In the first embodiment, it may also be configured to include a pretreatment coating unit F0, similar to the second embodiment. Regarding the coating unit F1, it has been described as supplying only the resist as a liquid, but it may also be configured to supply pretreatment liquid in addition to the resist. Specifically, for example, a nozzle for supplying and spraying the pretreatment liquid may be provided in the moving mechanism 63.

[0115] [Example of a coating apparatus]

[0116] In addition, regarding the substrate processing apparatus 1, an example is shown that is configured to form and develop a resist film, but it can also be configured as a coating apparatus that does not perform development. Figure 13A front view of the coating apparatus 1A is shown. The coating apparatus 1A is described with a focus on its differences from the substrate processing apparatus 1.

[0117] Each of layers E1 to E3 in the coating apparatus 1A is configured similarly to layer E1 as described in the first embodiment. The wafer W is transferred from the temperature adjustment module 17 of the first intermediate block D2 to any of the layers E1 to E3, and sequentially transported via coating processing units F1 to F5 as described above to form a resist film. Then, after being transported to the second intermediate block D4 to receive PAB, the wafer W is transported by the transport mechanism 21 to the tower T5 of layer E4, and returns to the carrier C via the first intermediate block D2 and carrier block D1. Therefore, in layer E4, the wafer W is transported from the second intermediate block D4 to the first intermediate block D1 without passing through the processing modules. In the coating apparatus 1A described above, since no development processing is performed, the exposure machine D6 is not connected, and therefore, an interface block D5 for transferring the wafer W to the exposure machine D6 is not provided.

[0118] This concludes the example of forming a resist film, but this technology can be applied to any coating film that can be formed on a substrate by supplying a coating liquid. Therefore, the coating apparatus 1A is not limited to a structure for forming a resist film, but can also be configured as an apparatus for forming coating films such as anti-reflective films and insulating films.

[0119] [Other layouts of the layers used for forming the resist film]

[0120] Regarding layer E1 described so far, it is a layout in which, when viewed from above, the conveying units 3 and 4, which act as the conveying mechanism, sandwich the column of cups 50 from the front and back. However, it is not limited to this layout; it could also be a layout in which the column of cups 50 sandwiches the column of the conveying mechanism from the front and back. Figure 14 A top view of layer E1 with such a layout is shown. The conveying mechanisms 31-36 forming the conveying section 3 are described in detail. Figure 1 The first embodiment also forms columns arranged horizontally, but the conveying mechanisms 31-36 are located at the center of the front and rear of layer E1. Furthermore, the coating processing units F1-F5 and... Figure 1 The first embodiment also forms columns arranged side-by-side, but two of each of the coating processing units F1 to F5 are provided, thus forming two columns. The columns of coating processing units F1 to F5 are respectively arranged on the front and rear sides relative to the conveying unit 3. That is, as described above, the columns of coating processing units F1 to F5 sandwich the columns of conveying mechanisms 31 to 36 from the front and rear in the middle.

[0121] When the conveying unit 3 delivers wafer W to the cup 50A on the front side of the coating processing units F1 to F5 on the front side, it passes over the cup 50B on the rear side of the coating processing units F1 to F5. Furthermore, when the conveying unit 3 delivers wafer W to the cup 50B on the rear side of the coating processing units F1 to F5 on the rear side, it passes over the cup 50A on the front side of the coating processing units F1 to F5.

[0122] In addition, in Figure 14 In the modified example shown, towers T11 and T12 are respectively located at the center of the front and rear sides on the left end and the center of the front and rear sides on the right end of layer E1. Therefore, when viewed from above, towers T11 and T12 are located to the left and right of the conveying section 3, respectively. The conveying mechanism 31 receives the wafer W from the first intermediate block D2 and transfers it to the tower T11 and then to the coating processing unit F1. The conveying mechanism 36 receives the wafer W from the coating processing unit F5 and transfers it to the tower T12, while the conveying mechanism 21 of the second intermediate block D4 receives the wafer W from the tower T12.

[0123] In the first and second embodiments described so far, it can also be set that it is also related to the Figure 14 In the modified example, towers T11 and T12 are arranged in the same position, and wafers W are transferred between blocks via towers T11 and T12. In addition, in each example, the coating processing units F0 to F5 are configured with two cups 50 arranged in front and behind, but they can also be configured with three or more cups, or they can be configured with only one cup 50.

[0124] Furthermore, in each embodiment, the substrate to be processed is not limited to a wafer; for example, it can be a substrate for manufacturing a flat panel display or a mask substrate for manufacturing an exposure mask. Therefore, square substrates can also be processed.

[0125] It should be considered that all points in the embodiments disclosed herein are illustrative rather than restrictive. The above embodiments may be omitted, substituted, modified, and combined in various ways without departing from the appended claims and their spirit.

[0126] Description of Reference Numerals

[0127] W: Wafer; 3, 4: Conveying section; 50: Cup; 51: Rotating holding plate; 53: Rotating mechanism; 61: Nozzle; F1~F6: Coating processing unit.

Claims

1. A substrate processing apparatus comprising: Multiple processing units are provided, each of which houses a substrate and rotates the substrates it houses. A coating film forming unit, wherein a first processing unit in the processing unit supplies a coating liquid to the surface of the substrate to form a coating film by the rotation; and The transfer unit transfers a substrate with the coated film formed to the processing units other than the first processing unit to dry the coated film outside the first processing unit, and sequentially transfers the substrate between the plurality of processing units to perform processing related to the formation of the coated film in each processing unit.

2. The substrate processing apparatus according to claim 1, wherein, The plurality of processing units includes a second processing unit that transports the substrate that has undergone drying of the coated film. The second processing unit includes a removal liquid supply unit, which supplies the substrate with removal liquid for removing portions of the coating film formed at the periphery of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein, The conveying unit has two or more conveying mechanisms, and the two or more conveying mechanisms respectively convey in different sections of the conveying path formed by the plurality of processing units and the conveying destination of the substrate next to the plurality of processing units.

4. The substrate processing apparatus according to claim 1 or 2, wherein, The following processing is performed in the first processing unit: The substrate is rotated based on a first rotational speed to spread the coating liquid on the substrate to form the coating film. as well as The substrate is rotated at a second rotational speed, which is lower than the first rotational speed, to adjust the film thickness distribution of the substrate. Among them, the processing unit other than the first processing unit includes a third processing unit, which performs rotation of the substrate based on a third rotation speed greater than the second rotation speed to adjust the film thickness of the substrate.

5. The substrate processing apparatus according to claim 1 or 2, wherein, The multiple processing units are arranged side by side. The conveying unit sequentially conveys the substrate from one of the processing units on the left to the other. A heating module is provided on the other side of the left and right sides of the plurality of processing units to heat the substrate on which the coating film is formed.

6. The substrate processing apparatus according to claim 1, wherein, Multiple stages are arranged vertically to hold the substrate for drying the coating film. The conveying unit moves the substrate between the processing units via the platform.

7. The substrate processing apparatus according to claim 6, wherein, A drying promotion section is provided, which promotes the drying of the coating film on the substrate placed on the stage in a manner that does not cause the substrate to rotate.

8. The substrate processing apparatus according to claim 6 or 7, wherein, In the first processing unit, the substrate is rotated at a first rotational speed to spread the coating liquid on the substrate to form the coating film, and the substrate is rotated at a second rotational speed, which is lower than the first rotational speed, to adjust the film thickness distribution of the substrate. Among these processing units, besides the first processing unit, there is a third processing unit that performs rotation of the substrate at a third rotational speed greater than the second rotational speed to adjust the film thickness of the substrate. The substrate is transferred to the stage after being transported to the third processing unit.

9. A substrate processing method, comprising the following steps: It can store substrates in multiple processing units and rotate the stored substrates respectively; In the first processing unit of the processing unit, a coating liquid is supplied to the surface of the substrate through a coating film forming unit so as to form a coating film by the rotation; The substrate on which the coating film has been formed is conveyed by the conveying section to the processing section other than the first processing section, so that the coating film is dried outside the first processing section. as well as The substrate is sequentially transported between the plurality of processing units by the conveying unit, so that processing related to the formation of the coating film is performed in each processing unit.

10. The substrate processing method according to claim 9, further comprising the following steps: In the first processing unit, the substrate is rotated at a first rotation speed to spread the coating liquid on the substrate to form the coating film. The substrate is rotated at a second rotation speed that is smaller than the first rotation speed, so as to adjust the film thickness distribution of the substrate in the first processing unit. as well as In a third processing unit, which is a processing unit other than the first processing unit, the substrate is rotated at a third rotation speed greater than the second rotation speed to adjust the film thickness of the substrate.

11. The substrate processing method according to claim 9 or 10, further comprising the following steps: The substrates are respectively placed on a plurality of stages arranged longitudinally to allow the coated film to dry; and The substrate is transferred between the processing units via the conveying unit and the stage.

Images