Terahertz frequency multiplication Schottky diode structure and frequency multiplier

Abstract

The invention belongs to the technical field of electrical elements, provides a terahertz frequency multiplication Schottky diode structure and a frequency multiplier, and is used for solving the problems that broadband matching is difficult to realize in input matching and the diode consistency is poor in a traditional balanced frequency doubler. The diode structure comprises a substrate, and a matching microstrip 100, a fin line grounding end 200 and a Schottky diode series tube core 300 which are arranged on the upper surface of the substrate, the matched microstrip is arranged along a center line, the two fin line grounding ends are symmetrically arranged at two sides of the matched microstrip, the two Schottky diode series tube cores are symmetrically arranged, and each series tube core is uniformly distributed along the edge of a fin line of the fin line grounding end at the same side; meanwhile, a frequency doubler is formed based on the diode structure. According to the invention, the balanced frequency doubler and the fin line structure are combined, and the fin line structure is utilized to realize broadband matching of input fundamental waves; meanwhile, according to the special field distribution of the fin line structure, the Schottky diodes are distributed along the fin lines, and the consistency of the diodes is remarkably improved.

Description

Technical Field

[0001] This invention belongs to the field of electrical component technology, specifically providing a terahertz frequency multiplier Schottky diode structure and frequency multiplier. Background Technology

[0002] Terahertz waves (THz), also known as terahertz rays, comprise electromagnetic waves with frequencies ranging from 0.1 THz to 10 THz, corresponding to wavelengths from 0.03 mm to 3 mm. Terahertz waves have frequencies higher than microwaves but lower than infrared radiation, with energy levels between electrons and photons. Terahertz waves possess characteristics such as high bandwidth, rich information carrying capacity, high spatiotemporal coherence, and good directionality, making them highly valuable for applications and research in various scientific fields, including national defense, homeland security, biomedicine, and wireless communication. The terahertz frequency source is a key factor in the development of terahertz technology, and its performance directly impacts the performance of the entire terahertz system. Terahertz signals obtained through frequency doubling offer advantages such as good high-frequency stability and a wide operating frequency band, making frequency multipliers a common solution for obtaining terahertz sources. Balanced second frequency multipliers are a commonly used structure, but they typically employ a linear arrangement of diode pairs, such as... Figure 1 As shown, due to the small number of parameters and structural issues during the design process, it is difficult to achieve broadband matching for the input. Simulation also revealed that the edge diodes and the center diodes have poor consistency due to field distribution. Summary of the Invention

[0003] The purpose of this invention is to provide a terahertz frequency doubling Schottky diode structure and frequency doubler to solve the problems of difficult input matching and poor diode consistency in traditional balanced frequency doublers.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] A terahertz frequency doubling Schottky diode structure is characterized by comprising: a substrate and a matching microstrip 100, a fin grounding terminal 200, and a Schottky diode series die 300 disposed on the substrate and its upper surface; the matching microstrip is disposed along the centerline, the two fin grounding terminals are symmetrically disposed on both sides of the matching microstrip, the two Schottky diode series dies are symmetrically disposed, and each series die is uniformly distributed along the fin edge of the fin grounding terminal on the same side.

[0006] Furthermore, the matching microstrip 100 has a chamfer at the connection point of the Schottky diode series die 300, so that the center diode of the Schottky diode series die is perpendicularly connected to the matching microstrip line.

[0007] Based on the terahertz frequency doubling Schottky diode structure, this invention also provides a frequency doubler, comprising an input waveguide 410, a multi-stage height reduction waveguide 420, a substrate integrated circuit 430, a first-stage height reduction waveguide 440, and an output waveguide 450 connected in sequence; wherein, the substrate integrated circuit includes: the aforementioned terahertz frequency doubling Schottky diode structure, an output suspension microstrip circuit 431, an output microstrip-waveguide probe transition structure 432, and a filter 433 disposed on the substrate and its surface; the fundamental frequency enters from the input waveguide, passes through the multi-stage height reduction waveguide, and reaches the Schottky diode series die, generating a second harmonic; the second harmonic is transmitted from the output suspension microstrip circuit to the output microstrip-waveguide probe transition structure, and then through the first-stage height reduction waveguide to reach the output waveguide, and is output from the output waveguide; an external biaser provides a bias voltage to the Schottky diode series die through the output suspension microstrip circuit, and a filter is disposed between the biaser and the output suspension microstrip circuit.

[0008] Furthermore, the filter is a high- or low-impedance filter or a CMRC filter.

[0009] Furthermore, Schottky diodes can be inverted diodes, discrete diodes, or monolithic diodes.

[0010] Furthermore, both the input and output waveguides are rectangular waveguides.

[0011] Furthermore, the substrate in the integrated circuit is made of quartz, gallium arsenide, gallium nitride, aluminum nitride, or silicon carbide.

[0012] Based on the above technical solution, the beneficial effects of the present invention are as follows:

[0013] This invention provides a terahertz frequency doubling Schottky diode structure and a frequency doubler, which combines a balanced frequency doubler and a fin structure. The fin structure is used to achieve broadband matching of the input fundamental frequency. At the same time, based on the special field distribution of the fin structure, the Schottky diode is distributed along the fin, which significantly increases the uniformity of the diode. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the structure of a traditional balanced frequency doubler in the prior art;

[0015] Figure 2 This is a schematic diagram of the terahertz frequency doubling Schottky diode structure in this invention;

[0016] Figure 3 This is a schematic diagram of the structure of the frequency doubler in this invention;

[0017] Figure 4 This is a schematic diagram of the substrate integrated circuit in the frequency doubler of the present invention;

[0018] Figure 5The graph shows the simulation test results of the frequency multiplication efficiency of the frequency multiplier in this invention;

[0019] Figure 6 This is a comparison diagram of the input matching between the frequency doubler in this invention and a traditional balanced frequency doubler;

[0020] In the diagram: 100, Matching microstrip; 200, Fin ground terminal; 300, Series die; 410, Input waveguide; 420, Multi-stage height reduction waveguide; 430, Substrate integrated circuit; 431, Output suspended microstrip circuit; 432, Output microstrip-waveguide probe transition structure; 433, Filter; 440, First-stage height reduction waveguide; 450, Output waveguide. Detailed Implementation

[0021] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0022] like Figure 1 As shown, in traditional balanced frequency doublers, the diodes are arranged in a straight line. For diode input matching, the diode positions are fixed, the matching parameter dimensions are small, and broadband matching is difficult. At the same time, due to field distribution, the performance of the edge diodes is better than that of the center diodes, resulting in poor diode consistency.

[0023] To address the aforementioned problems, this embodiment provides a terahertz frequency doubling Schottky diode structure, such as... Figure 2 As shown, it includes: a substrate and a matching microstrip 100, a fin grounding terminal 200, and a Schottky diode series die 300 disposed on its upper surface; the matching microstrip 100 is disposed along the center line, two fin grounding terminals 200 are symmetrically disposed on both sides of the matching microstrip 100, and two Schottky diode series dies 300 are symmetrically disposed and both connected to the matching microstrip 100, with each series die evenly distributed along the edge of the fin grounding terminal on the same side; furthermore, the matching microstrip 100 has a chamfer at the connection of the Schottky diode series die 300, so that the center diode of the Schottky diode series die 300 is perpendicularly connected to the matching microstrip line.

[0024] When the above-mentioned terahertz frequency doubling Schottky diode structure is applied in a balanced frequency doubler, the fin-ground terminal 200 can make the input more suitable for broadband matching. At the same time, by taking advantage of the characteristic that the electric field strength is small on both sides of the fin and strong in the middle, the diodes can be distributed along the fins, which can significantly increase the consistency of the diodes.

[0025] Based on this, this embodiment also provides a frequency doubler, such as... Figure 3 and Figure 4As shown, the structure includes an input waveguide 410, a multi-stage height reduction waveguide 420, a substrate integrated circuit 430, a first-stage height reduction waveguide 440, and an output waveguide 450 connected in sequence. The substrate integrated circuit 430 includes: a substrate and the aforementioned terahertz frequency doubling Schottky diode structure disposed on its surface, an output suspension microstrip circuit 431, an output microstrip-waveguide probe transition structure 432, and a filter 433. The fundamental wave enters from the input waveguide 410, passes through the multi-stage height reduction waveguide 420 (facilitating absorption of electromagnetic waves by the Schottky diode), and then reaches the Schottky diode series die 300 of the terahertz frequency doubling Schottky diode structure. At this point, the fundamental wave is transformed from the propagation master mode TE10 by the diode... After absorption, a second harmonic of quasi-TEM mode suitable for the output of the output suspension microstrip circuit 431 is generated. The second harmonic is transmitted from the output suspension microstrip circuit 431 to the output microstrip-waveguide probe transition structure 432, and then a signal suitable for waveguide transmission with the main mode of TE10 is generated by the probe coupling effect. The signal reaches the output waveguide 450 through the first-stage height reduction waveguide 440 and is output from the output waveguide 450, achieving a frequency doubling efficiency of 20% or more across the entire frequency band. The biaser provides a bias voltage to the Schottky diode series die 300 through the output suspension microstrip circuit 431, and a filter 433 is set between the biaser and the output suspension microstrip circuit 431 to prevent second harmonic leakage.

[0026] In terms of working principle, since the frequency doubler is a balanced structure, it does not generate third harmonics, thus eliminating the need for a third harmonic filter circuit, which helps reduce the transmission loss inside the frequency doubler. In addition, compared with the traditional balanced frequency doubler structure, this embodiment introduces a finned structure, which increases the dimension of input matching. At the same time, the finned structure is more conducive to wider bandwidth matching. Meanwhile, the diode chips are distributed along the finned lines, utilizing the characteristic that the electric field is strong in the middle and weak on both sides of the finned lines to neutralize the problem of poor electric field distribution consistency in the traditional structure where the electric field is concentrated on both sides.

[0027] Specifically, filter 433 is a high-low impedance filter or a CMRC filter.

[0028] Specifically, Schottky diodes can be inverted diodes, discrete diodes, or monolithic diodes.

[0029] Specifically, both the input waveguide 410 and the output waveguide 450 are rectangular waveguides.

[0030] Specifically, the substrate in the substrate integrated circuit is made of quartz, gallium arsenide, gallium nitride, aluminum nitride, or silicon carbide.

[0031] The beneficial effects of the present invention will be explained in detail below with reference to simulation tests.

[0032] like Figure 5The figure shown is a simulation test result of the frequency doubling efficiency of the frequency doubler in this embodiment. As can be seen from the figure, the device achieves an overall efficiency of more than 21% in the full waveguide frequency band of 140GHz to 220GHz, which shows that the present invention can realize broadband frequency doubling design.

[0033] like Figure 6 The diagram shows a comparison of the input matching of the frequency doubler in this embodiment and a traditional balanced frequency doubler. The comparison reveals that the frequency doubler in this invention has a better input matching effect in the input frequency band of 70GHz to 110GHz, and the input matching bandwidth below -15dB is wider. This proves that the present invention can effectively improve the input matching by introducing a fin structure and has a certain effect of widening the bandwidth.

[0034] The above description is merely a specific embodiment of the present invention. Any feature disclosed in this specification may be replaced by other equivalent or similar features unless otherwise specified. All disclosed features, or steps in all methods or processes, may be combined in any way except for mutually exclusive features and / or steps.

Claims

1. A terahertz frequency doubling Schottky diode structure, characterized in that, include: The substrate and its upper surface are provided with a matching microstrip (100), a fin ground terminal (200), and a Schottky diode series die (300); the matching microstrip is arranged along the center line, the two fin ground terminals are symmetrically arranged on both sides of the matching microstrip, the two Schottky diode series dies are symmetrically arranged, and each series die is evenly distributed along the fin edge of the fin ground terminal on the same side.

2. The terahertz frequency doubling Schottky diode structure according to claim 1, characterized in that, The matching microstrip (100) has a chamfer at the connection of the Schottky diode series die (300) so that the center diode of the Schottky diode series die is perpendicularly connected to the matching microstrip line.

3. A frequency doubler, comprising an input waveguide (410), a multi-stage height reduction waveguide (420), a substrate integrated circuit (430), a first-stage height reduction waveguide (440), and an output waveguide (450) connected in sequence; characterized in that, The substrate integrated circuit includes: an output suspension microstrip circuit (431), an output microstrip-waveguide probe transition structure (432), a filter (433), and the terahertz frequency doubling Schottky diode structure described in claim 1, disposed on the substrate and its surface; the fundamental wave enters from the input waveguide, passes through multiple stages of height reduction waveguides, and reaches the Schottky diode series die, generating a second harmonic; the second harmonic is transmitted from the output suspension microstrip circuit to the output microstrip-waveguide probe transition structure, and then through a first stage of height reduction waveguide to reach the output waveguide, and is output from the output waveguide; an external biaser provides a bias voltage to the Schottky diode series die through the output suspension microstrip circuit, and a filter is disposed between the biaser and the output suspension microstrip circuit.

4. The frequency doubler according to claim 3, characterized in that, The filter is a high- or low-impedance filter or a CMRC filter.

5. The frequency doubler according to claim 3, characterized in that, Schottky diodes can be inverted diodes, discrete diodes, or monolithic diodes.

6. The frequency doubler according to claim 3, characterized in that, Both the input and output waveguides are rectangular waveguides.

7. The frequency doubler according to claim 3, characterized in that, The substrate in the integrated circuit is made of quartz, gallium arsenide, gallium nitride, aluminum nitride or silicon carbide.

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