Conformal and selective silicon nitride deposition

Abstract

The present disclosure generally relates to a method for forming a silicon nitride film layer on a substrate. In one embodiment, the method includes placing a substrate having at least one feature thereon in a processing chamber, depositing a first silicon film layer on a non-silicon oxide surface of the substrate for a duration of about 1 to about 4 minutes, nitriding the first silicon film layer to form a first silicon nitride film layer on the substrate, and forming a second silicon nitride film layer on the substrate. A second silicon film layer is selectively deposited on the first silicon nitride film layer, the second silicon film layer is nitrided to form a second silicon nitride film layer, and the second silicon nitride film layer is directly arranged on the first silicon nitride film layer.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to the manufacture of semiconductor components and devices. More specifically, the embodiments described herein provide a method for forming a silicon nitride film layer on a semiconductor surface. Background Technology

[0002] Silicon nitride (SiN) has been widely used in the semiconductor and microelectronics industries. SiN films exhibit high resistivity, high resistivity, high conformability, and excellent etch resistance. SiN films deposited via plasma-enhanced chemical vapor deposition (PECVD) or conventional chemical vapor deposition (CVD) offer a variety of functions, including use as charge storage layers, stress pads, mask layers, dielectric layers, and passivation layers.

[0003] Selective deposition of silicon nitride can be achieved using temporary mask structures. While temporary masks can be removed via wet or dry processes, the use of wet chemicals has become less attractive due to particle control issues and other challenges. Removing the mask using a dry process can alter the underlying layers, causing charge-induced damage and contaminating them. Therefore, the microelectronics and semiconductor industries need to avoid selective silicon nitride deposition methods using temporary mask structures. Summary of the Invention

[0004] The practice described herein generally relates to a method for selectively depositing a conformal silicon nitride film on a surface of a substrate. The method includes: providing a substrate including a silicon oxide surface and a non-silicon oxide surface; depositing a first silicon film layer on the non-silicon oxide surface of the substrate for a duration of about 1 to about 4 minutes; and nitriding the first silicon film layer to form a first silicon nitride film layer.

[0005] In another embodiment, a method is provided for selectively depositing a multilayer conformal silicon nitride film on a surface of a substrate. The method includes: providing a substrate including a silicon oxide surface and a non-silicon oxide surface; selectively depositing a first silicon film layer on the non-silicon oxide surface of the substrate for a duration of about 1 to 4 minutes; nitriding the first silicon film layer to form a first silicon nitride film layer; selectively depositing a subsequent silicon film layer on the first silicon nitride film layer; and nitriding the subsequent silicon film layer to form a multilayer conformal silicon nitride film, the multilayer conformal silicon nitride film being directly disposed on the non-silicon oxide surface of the substrate.

[0006] In another embodiment, a method for selectively depositing a bulk conformal silicon nitride film on a surface of a substrate is provided. The method includes: providing a substrate including a silicon oxide surface and a non-silicon oxide surface; performing a selective thermal CVD process on the non-silicon oxide surface of the substrate to selectively deposit a silicon film layer for a duration of about 1 to 4 minutes; performing a plasma nitriding of the silicon film layer to form a silicon nitride film layer; performing a selective thermal CVD process to selectively deposit a silicon film layer on the silicon nitride film layer; performing a plasma nitriding of the silicon film layer to form a silicon nitride film layer; and repeating the selective thermal CVD and plasma nitriding processes from 10 to 1,000 times to provide a bulk conformal silicon nitride film. Attached Figure Description

[0007] To gain a more detailed understanding of the features described above, the embodiments briefly summarized above can be described in more detail by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the present disclosure and should not be considered as limiting its scope, as other equivalent implementations are permissible.

[0008] Figure 1 It is applicable to implementation according to certain embodiments of this disclosure. Figure 2 A schematic diagram of the processing system described in the diagram;

[0009] Figure 2 A flowchart is depicted of a method for selectively depositing a conformal silicon nitride film on the surface of a substrate according to certain embodiments of the present disclosure.

[0010] Figures 3A to 3F This disclosure illustrates certain embodiments of the invention. Figure 2 Cross-sectional view of the conformal silicon nitride film formed by the method; and

[0011] Figure 4 This is a graph depicting the deposition growth delay of amorphous silicon deposits on a silicon oxide surface.

[0012] For ease of understanding, the same reference numerals are used as much as possible to denote common elements in the figures. It is conceivable that elements and features of one practice can be advantageously incorporated into other practices without further description. Detailed Implementation

[0013] Embodiments of this disclosure generally relate to apparatus and methods for depositing thin films to form structures on a substrate. Certain details are described below. Figures 1 to 4The following disclosure is provided to offer a thorough understanding of the various practices described herein. Further details describing well-known methods and systems typically associated with thin film deposition are not set forth in the following disclosure to avoid unnecessarily obscuring the descriptions of the various practices.

[0014] Many details, components, and other features described herein are merely illustrative of specific practices. Accordingly, other practices may have other details, components, and features without departing from the spirit or scope of this disclosure. Furthermore, further practices of this disclosure may be practiced without the details described below.

[0015] The following description of the practice described herein will refer to a PECVD process that can be performed using any suitable thin film deposition system. Examples of suitable systems include Precision. TM The system is commercially available from Applied Materials, Inc., Santa Clara, California. Other tools capable of performing PECVD processes may also be applicable to the practices described herein. Additionally, any system capable of performing the PECVD processes described herein may be used advantageously. The equipment descriptions herein are illustrative and should not be construed as limiting the scope of the practices described herein.

[0016] Figure 1 This is a schematic diagram of an exemplary substrate processing system 132 suitable for performing deposition processes according to at least one embodiment. Suitable chambers are available from Applied Materials, Inc., located in Santa Clara, California. It should be understood that the system described below is an exemplary processing chamber and can be used or modified with other chambers (including chambers from other manufacturers) to achieve embodiments of this disclosure (e.g., method 200 described below). In some embodiments, the substrate processing system 132 may be configured to use chemical vapor deposition to deposit a thin film onto a substrate.

[0017] The substrate processing system 132 includes a processing chamber 100 coupled to a gas panel 130 and a controller 110. The processing chamber 100 generally includes a top wall 124, side walls 101, and a bottom wall 122 defining a processing volume 126. A substrate support assembly 146 is provided within the processing volume 126 of the processing chamber 100. The substrate support assembly 146 generally includes an electrostatic chuck 150 supported by a rod 160. The electrostatic chuck 150 is typically made of aluminum, ceramic, or other suitable materials. The electrostatic chuck 150 can be moved vertically within the processing chamber 100 using a displacement mechanism (not shown).

[0018] A vacuum pump 102 is coupled to a port formed in the bottom wall 122 of the processing chamber 100. The vacuum pump 102 is used to maintain the required gas pressure in the processing chamber 100. The vacuum pump 102 also evacuates post-processing gases and processing byproducts from the processing chamber 100.

[0019] The substrate processing system 132 may further include additional devices for controlling chamber pressure, such as valves (e.g., throttle valves and isolation valves) located between the processing chamber 100 and the vacuum pump 102 to control chamber pressure.

[0020] A gas distribution assembly 120 having multiple orifices 128 is disposed on top of the processing chamber 100, above the electrostatic chuck 150. The orifices 128 of the gas distribution assembly 120 are used to guide processing gases into the processing chamber 100. The orifices 128 may have different sizes, numbers, distributions, shapes, designs, and diameters to facilitate the flow of various processing gases for different processing needs. The gas distribution assembly 120 is coupled to a gas panel 130 to allow the supply of various gases to the processing volume 126 during processing. Plasma is formed by the processing gas mixture exiting the gas distribution assembly 120 to enhance the decomposition of the processing gases, resulting in material deposition on the surface 191 of the substrate 190. In some embodiments, the gas distribution assembly 120 is a concave or dome-shaped gas plate having multiple orifices 128 formed therethrough.

[0021] In one embodiment, the gas panel 130 includes a precursor gas, such as a silicon-containing gas, for forming a film on a substrate 190 supported on a substrate support assembly 146. In some embodiments, the silicon-containing gas is silane (SiH4), silane (Si2H6), propane (Si3H8), or other higher-order silanes, such as, but not limited to, tetrasilane (Si4H6). 10 ) or combinations thereof. Higher-order silanes (e.g., tetrasilane (Si4H) 10 It may be in liquid form rather than gaseous form, but can be delivered to the processing chamber 100 by using a carrier gas (such as argon or nitrogen).

[0022] The gas distribution assembly 120 may be coupled to a remote plasma source (not shown). The remote plasma source may be a capacitively coupled plasma source or an inductively coupled plasma source. The remote plasma source may also be coupled to a clean gas source for supplying clean gas to the processing volume 126 formed within the processing chamber 100. In one embodiment, clean gas is supplied via a central conduit formed axially through the top wall 124 of the processing chamber 100. In another embodiment, clean gas is supplied via the same plurality of orifices 128 that guide the flow of precursor gas. Exemplary clean gases include oxygen-containing gases, such as oxygen and / or ozone, and fluorine-containing gases, such as NF3, or combinations thereof.

[0023] In addition to or as an alternative to a remote plasma source, the gas distribution assembly 120 is also coupled to a first or upper radio frequency (RF) power source 140. In other words, the gas distribution assembly 120 and the electrostatic chuck 150 may form a pair of spaced-apart electrodes within the processing volume 126. One or more RF power sources provide a bias potential to the gas distribution assembly 120 via an optional matching network 138 to facilitate plasma generation between the gas distribution assembly 120 and the electrostatic chuck 150. Alternatively, the RF power source 140 and the matching network 138 may be coupled to the gas distribution assembly 120, the electrostatic chuck 150, or both, or to an antenna (not shown) located outside the processing chamber 100. The first RF power source 140 facilitates the maintenance or generation of plasma, such as plasma generated by a clean gas. In one embodiment, the remote plasma source is omitted, and the clean gas can be ionized in situ into plasma via the first RF power source 140. The substrate support assembly 146 can be coupled to a second or lower RF power source (not shown). In some implementations, the RF power source can generate power at frequencies of 350 kHz, 2 MHz, 13.56 MHz, 27 MHz, 40 MHz, 60 MHz, 100 MHz, or 120 MHz. For example, the first RF power source 140 can generate power at frequencies from about 13.56 MHz to about 120 MHz, while the second RF power source can be a low-frequency RF power source (e.g., from about 2 MHz to about 13.56 MHz). It should be noted that other frequencies are also conceivable. In some implementations, the second RF power source can be a mixed-frequency RF power source, providing both high-frequency and low-frequency power. The use of dual-frequency RF power sources, particularly for the second RF power source, improves film deposition. In some examples, dual-frequency power is provided using the second RF power source. In some implementations, a first frequency, such as about 2 MHz to about 13.56 MHz, improves the injection of material into the deposition film, while a second frequency, such as about 13.56 MHz to about 120 MHz, increases ionization and deposition rate.

[0024] One or both of the first RF power source 140 and the second RF power source can be used to generate or sustain plasma in the processing volume 126. For example, the second RF power source may be used during silicon nitriding, and the first RF power source 140 (alone or in combination with a remote plasma source) may be used during cleaning. In some nitriding processes, the first RF power source 140 is used in combination with the second RF power source. During nitriding, one or both of the first RF power source 140 and the second RF power source can provide, for example, power from about 100 watts (W) to about 20,000 W in the processing volume 126 to facilitate the ionization of the precursor gas. In some embodiments, at least one of the first RF power source 140 and the second RF power source is pulsed.

[0025] The substrate support assembly 146 may include a heater element 170 embedded therein, such as a resistive element. The heater element 170 is coupled to a power source 106 regulated by the controller 110 to control the heat generated by the heater element 170. The heater element 170 may be disposed within the substrate support assembly 146 and may be used to controllably heat the substrate support assembly 146 and the substrate 190 located on the upper surface of the electrostatic chuck 150 to a predetermined temperature, for example, between about 50 degrees Celsius and about 600 degrees Celsius. A temperature sensor 172 (e.g., a thermocouple) may be embedded in the electrostatic chuck 150 to monitor the temperature of the electrostatic chuck 150 in a conventional manner. The controller 110 uses the measured temperature to control the power supplied to the heater element 170 to maintain the substrate at the desired temperature.

[0026] The controller 110 includes a central processing unit (CPU) 112, memory 116, and support circuitry 114 for controlling the processing sequence and regulating airflow from the gas panel 130. The CPU 112 can be any form of general-purpose computer processor suitable for industrial environments. Software routines can be stored in memory 116, such as random access memory, read-only memory, floppy disk drives or hard disk drives, or other forms of digital storage. The support circuitry 114 is conventionally coupled to the CPU 112 and may include cache, frequency circuitry, input / output systems, power supplies, etc. Bidirectional communication between the controller 110 and the various components of the board processing system 132 is controlled via a plurality of signal cables collectively referred to as signal buses 118, some of which are illustrated in… Figure 1 middle.

[0027] Other deposition chambers may also benefit from this disclosure, and the parameters listed above may vary depending on the specific deposition chamber used to form amorphous silicon and conformal silicon nitride films. For example, other deposition chambers may have larger or smaller volumes, utilizing gas flow rates that are larger or smaller than those described for deposition chambers available from Applied Materials. Furthermore, while PECVD chambers have been described above, thermal CVD chambers are contemplated for use in various aspects of this disclosure.

[0028] Figure 2 It is used according to certain embodiments described herein. Figure 1The flowchart illustrates an exemplary method 200 for forming a conformal silicon nitride film on a substrate using a processing chamber 100. In one embodiment, method 200 begins at operation 202: placing a substrate (e.g., substrate 302 shown in FIG. 3) in the internal processing volume 126 of the processing chamber 100 for processing. In one embodiment, the substrate (e.g., substrate 302) is conveyed into the processing chamber 100 and onto a substrate support assembly 146 via any suitable means (e.g., via a substrate transfer port (not shown) on the sidewall 101). The substrate support assembly 146 can be adjusted to the processing position via a lifting actuator (not shown). The substrate 190 can be secured to the substrate support assembly 146 via an electrostatic chuck 150.

[0029] exist Figure 3A In the example shown, substrate 302 has a silicon oxide surface 306 and a non-silicon oxide surface 304 (e.g., characteristic features). Examples of non-silicon oxide surfaces include, but are not limited to, silicon, silicon nitride, and carbon. At operation 204, a first deposition process is performed on substrate 302 in processing chamber 100 to selectively deposit a first amorphous silicon layer 310 on the non-silicon oxide surface 304 of the substrate, such as... Figure 3B As shown in the image.

[0030] In one embodiment, the processing chamber 100 may be a plasma-enhanced chemical vapor deposition (PECVD) chamber, such as... Figure 1 As shown in the figure. A first amorphous silicon layer 310 can be deposited on the non-oxide silicon surface 304 of a substrate using thermal CVD processing (e.g., in a thermal CVD chamber or a PECVD chamber). It should be noted that performing the thermal processing in a PECVD chamber allows subsequent plasma-based processing to be performed on the substrate without having to transfer the substrate to a different chamber, thereby improving yield. The thermal CVD process for depositing the first amorphous silicon layer 310 includes flowing a silicon-containing precursor gas from a gas panel 130 into an internal processing volume 126 of the processing chamber 100. In one embodiment, the silicon-containing precursor gas for forming the first amorphous silicon layer 310 may include silane, disilane, propane, tetrasilane, higher-order silanes, or any combination thereof. In one embodiment, the thermal CVD process is performed between about 1 minute and about 4 minutes, and between about 2 minutes and about 3 minutes. The source-containing precursor gas is provided to the processing volume 126 through, for example, a plurality of pores 128, such that the source-containing precursor gas is uniformly distributed in the processing volume 126.

[0031] The source-containing precursor gas is then thermally decomposed in the internal processing volume 126 to deposit a first amorphous silicon layer 310 on the substrate non-oxide silicon surface 304. The first amorphous silicon layer 310 is selectively deposited on the substrate non-oxide silicon surface 304 above the substrate silicon oxide surface 306. This method utilizes the difference in silicon deposition nucleation time required for various surface compositions. Comparing the different nucleation rates of silicon on the non-oxide silicon surface and silicon on the oxide surface, it was found that the use of a silane-based precursor gas resulted in a longer nucleation time required for silicon to begin growing on the oxide surface than on the non-oxide silicon surface. By employing a substrate that simultaneously includes both oxide and non-oxide silicon surfaces, the difference in silicon deposition nucleation time can be utilized to selectively deposit amorphous silicon on the non-oxide silicon surface.

[0032] To deposit the first amorphous silicon layer 310, the temperature of the substrate support assembly 146 in the processing chamber 100 can be set between about 50 degrees Celsius and about 600 degrees Celsius, for example, between about 50 degrees Celsius and about 60 degrees Celsius (when tetrasilane is used as the source precursor gas), or between about 400 degrees Celsius and about 600 degrees Celsius (when a lower-order silane is used as the source precursor gas), and the pressure in the chamber during the thermal deposition process can be between about 10 mTorr and about 760 Torr, for example, about 300 Torr. The source precursor gas flow rate is from about 3 sccm to about 3000 sccm. The deposited amorphous silicon layer may have a thickness between about 2 angstroms and about 5,000 angstroms, for example, about 2 angstroms to about 4,000 angstroms, or about 2 angstroms to about 3,000 angstroms, or about 2 angstroms to about 2,000 angstroms, or about 2 angstroms to about 1,000 angstroms, or about 2 angstroms to about 500 angstroms, or about 2 angstroms to about 250 angstroms, or about 5 angstroms to about 100 angstroms, or about 5 angstroms to about 50 angstroms, or about 5 angstroms to about 25 angstroms, or about 5 angstroms to about 10 angstroms.

[0033] At operation 206, an amorphous silicon nitriding process is performed on substrate 302 in processing chamber 100 to treat a first amorphous silicon layer 310 and transform the first amorphous silicon layer 310 into a first silicon nitride layer 314. The nitriding process is achieved by plasma-based nitriding. In one embodiment, the plasma-based nitriding process includes performing radical material nitriding in processing volume 126 of processing chamber 100 using a plasma source (not shown). Silicon nitriding performed using plasma treatment can treat the amorphous silicon layer to form a conformal layer of silicon nitride having a thickness from about 5 angstroms to about 60 angstroms. The thickness of the amorphous silicon layer is selected to achieve a predetermined transformation to the nitride layer, for example, greater than 99% nitriding. As a result of controlled deposition of the amorphous silicon layer within the limitations of the silicon nitriding process, the amorphous silicon layer is optimally and integrally transformed into a conformal layer of silicon nitride. If the thickness of the amorphous silicon layer exceeds the silicon nitriding process limit, the excess amorphous silicon layer will remain amorphous silicon, with the silicon nitride layer disposed on top.

[0034] Plasma-based nitriding involves flowing a nitrogen-containing process gas (including, but not limited to, N2, NH3, hydrazine (N2H4), or combinations thereof) into a process volume 126 to generate plasma. In some embodiments, the nitrogen-containing process gas may be combined with argon or other inert gases. In other embodiments, the nitrogen-containing process gas further comprises hydrogen (H2). Plasma can be generated by guiding the process gas into the process volume 126 and exciting the process gas to ignite the plasma. Generally, when processing a 300mm substrate, the RF power generated for igniting and / or sustaining the plasma can be from about 50W to about 10kW; however, other power levels are also contemplated, such as from about 50W to about 100W, or for example, from about 1kW to 1.5kW, or from about 1kW to about 3kW, or from about 1kW to about 5kW, or from about 2kW to about 6kW, or from about 3kW to about 8kW, or from about 5kW to 10kW.

[0035] When the plasma is ignited, a radical nitrogen-containing substance formed from a nitrogen-containing treatment gas flows around the treatment volume 126 and reacts with the first amorphous silicon layer 310. This radical nitrogen-containing substance may include N and / or NH, for example, N· and / or NH·. During the nitriding process, the radical nitrogen-containing substance saturates the surface of the first amorphous silicon layer 310. The radical nitrogen-containing substance reacts with silicon atoms in the first amorphous silicon layer 310 and transforms them into silicon nitride (SiN). The reaction between the radical nitrogen-containing substance and the silicon atoms in the first amorphous silicon layer 310 results in the formation of the first silicon nitride layer 314, such as... Figure 3C As shown in the image.

[0036] At operation 206, the temperature of substrate 190 is from about 100 degrees Celsius to about 650 degrees Celsius, for example from about 150 degrees Celsius to about 650 degrees Celsius; and / or the pressure is from about 0.025 Torr (25 millitors (mTorr)) to about 5 Torr, for example from about 0.050 Torr (50 mTorr) to about 2 Torr. However, other temperatures and pressures are also possible. The RF power can be controlled between about 100 watts and about 800 watts, for example about 400 watts. The plasma-forming gas, such as N2 gas, can be supplied between about 1000 sccm and about 5000 sccm (for example, about 2000 sccm). In another embodiment, the NH3 plasma-forming gas can be supplied between about 500 sccm and about 2000 sccm (for example, about 1000 sccm).

[0037] At operation 208, operations 204 and 206 are repeated on the substrate 302 in the processing chamber 100 to selectively deposit a second amorphous silicon layer 316 on the first silicon nitride layer 314, as follows: Figure 3DAs shown in the diagram. A second amorphous silicon deposition process can be performed by selectively depositing a second amorphous silicon on a non-oxide surface (i.e., the resulting first silicon nitride layer 314) using the same conditions as those outlined above for depositing the first amorphous silicon layer 310. In some embodiments, the conditions for depositing the second amorphous silicon layer (including, but not limited to, temperature and pressure within the deposition chamber) may differ from those for depositing the first amorphous silicon layer 310. A second amorphous silicon nitride process is performed to dispose of the second amorphous silicon layer 316 and transform it into a second silicon nitride layer 318. The second amorphous silicon nitride process can be performed using the same conditions as those outlined above for producing the first amorphous silicon nitride layer. In some embodiments, the conditions for producing the second amorphous silicon nitride layer (including, but not limited to, temperature, pressure, RF power, and flow rate) may differ from those for producing the first amorphous silicon nitride layer.

[0038] Repeatable deposition of amorphous silicon layers and subsequent nitriding of amorphous silicon layers can provide multiple silicon nitride layers. In some embodiments, each silicon nitride layer is fused with a subsequent layer to form a single silicon nitride layer. In other embodiments, the multiple silicon nitride layers are arranged in a stacked configuration, such as... Figure 3E As shown in the diagram. In some implementations, each cycle of amorphous silicon layer deposition and subsequent nitriding provides a silicon nitride layer thickness of approximately 10 angstroms. The deposition and subsequent nitriding of the amorphous silicon layer can be repeated until the desired silicon nitride layer thickness is achieved. The deposition and subsequent nitriding of the amorphous silicon layer can be repeated fewer or more times than either of the following to produce… Figure 3F The final nitrided layer 340: 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 6 3, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 300, 400, 500, 600, 700, 800, 900, and 1,000.

[0039] Figure 4The difference in silicon deposition nucleation rates between silicon oxide and non-silicon oxide surfaces (e.g., silicon surfaces) is illustrated. The initial nucleation rate of amorphous silicon dioxide on a silicon oxide surface is zero, and this zero deposition rate increases after approximately four minutes. In contrast, the initial nucleation rate of amorphous silicon on a silicon surface (i.e., a non-silicon oxide surface) is greater than zero. Amorphous silicon deposition occurs on non-silicon oxide surfaces, while deposition on silicon oxide surfaces is delayed. This difference in initial nucleation rates can be used to selectively deposit amorphous silicon onto non-silicon oxide surfaces, such as silicon surfaces.

[0040] In summary, some benefits of certain practices of this disclosure provide a method for selectively depositing conformal silicon nitride films. The conformal silicon nitride film may comprise a single silicon nitride layer or multiple silicon nitride layers. Using the aspects described herein, in some embodiments, it has been found that a conformal silicon nitride layer can be formed on the surface of a substrate by using the amorphous silicon deposition and subsequent silicon nitride treatment disclosed herein. In one embodiment, the silicon deposition and subsequent silicon nitride treatment disclosed herein can be performed in situ in the same processing chamber 100, eliminating the need for substrate transfer and the use of expensive cluster systems. Furthermore, because the deposition process used herein employs low-cost silicon precursor gases (e.g., silane and silane) and low-cost nitrogen gases (e.g., nitrogen and ammonia), the overall cost of silicon nitride deposition is lower than that of other, more expensive deposition methods.

[0041] When introducing elements of this disclosure or exemplary aspects or practices thereof, the articles “a,” “an,” “the,” and “said” are intended to indicate the presence of one or more elements.

[0042] The terms “comprising,” “including,” and “having” are intended to be included and mean that there may be additional elements besides those listed.

[0043] While the foregoing describes the implementation of this disclosure, other and further implementations of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the following claims.

Claims

1. A method for selectively depositing a conformal silicon nitride film on the surface of a substrate, the method comprising: A substrate is provided, the substrate comprising a silicon oxide surface and a non-silicon oxide surface; The first silicon film layer is deposited on the non-oxidized silicon surface of the substrate for a duration of about 1 to about 4 minutes; and The first silicon film is nitrided to form a first silicon nitride film.

2. The method of claim 1, further comprising: A second silicon film is deposited on the first silicon nitride film.

3. The method of claim 2, further comprising: The second silicon film is nitrided to form a second silicon nitride film.

4. The method of claim 1, wherein depositing the first silicon film layer comprises: The first silicon film layer is deposited by CVD processing.

5. The method of claim 4, wherein the CVD process uses silane gas as a silicon source.

6. The method of claim 5, wherein the silane gas comprises: SiH4, Si2H6, Si3H8, Si4H 10 Or a combination thereof.

7. The method of claim 1, wherein the duration is 2 to 3 minutes.

8. The method of claim 1, wherein nitriding the first silicon film layer comprises: The first silicon film layer is treated with nitrogen-containing plasma, which includes N2, NH3, N2H4, or a combination thereof.

9. The method of claim 1, wherein the non-oxidized silicon surface is selected from the group consisting of silicon, silicon nitride, and carbon.

10. A method for selectively depositing a multilayer conformal silicon nitride film on the surface of a substrate, the method comprising: A substrate is provided, the substrate comprising a silicon oxide surface and a non-silicon oxide surface; The first silicon film layer is selectively deposited on the non-oxidized silicon surface of the substrate for a duration of about 1 to 4 minutes; The first silicon film layer is nitrided to form a first silicon nitride film layer; Subsequent silicon films are selectively deposited on the first silicon nitride film; and The subsequent silicon film layer is nitrided to form a multilayer conformal silicon nitride film, which is directly disposed on the non-oxide silicon surface of the substrate.

11. The method of claim 1, wherein depositing the first silicon film layer comprises: The first silicon film layer is deposited by CVD processing.

12. The method of claim 11, wherein the CVD process uses silane gas as a silicon source.

13. The method of claim 12, wherein the silane gas comprises: SiH4, Si2H6, Si3H8, Si4H 10 Or a combination thereof.

14. The method of claim 10, wherein nitriding the first silicon film layer comprises: The first silicon film layer was treated with nitrogen-containing plasma.

15. The method of claim 14, wherein the nitrogen-containing plasma comprises a source gas, wherein the source gas comprises: N2, NH3, N2H4, or a combination thereof.

16. The method of claim 10, wherein the non-oxidized silicon surface is selected from the group consisting of silicon, silicon nitride, and carbon.

17. A method for selectively depositing bulk conformal silicon nitride films on the surface of a substrate, the method comprising: A substrate is provided, the substrate comprising a silicon oxide surface and a non-silicon oxide surface; A selective thermal CVD process is performed on the non-oxidized silicon surface of the substrate to selectively deposit a silicon film for a duration of about 1 to 4 minutes; Plasma nitriding of the silicon film is performed to form a silicon nitride film. Perform selective thermal CVD to selectively deposit a silicon film on the silicon nitride film; Plasma nitriding of the silicon film is performed to form a silicon nitride film. and The selective thermal CVD and plasma nitriding processes are repeated 10 to 1,000 times to provide bulk conformal silicon nitride films.

18. The method of claim 17, wherein the selective CVD process uses silane gas as a silicon source, derived from SiH4, Si2H6, Si3H8, Si4H 10 The silane gas is selected from groups consisting of, or combinations thereof.

19. The method of claim 17, wherein the plasma nitriding process employs a nitrogen-containing source gas, selected from the group consisting of N2, NH3, N2H4, or combinations thereof.

20. The method of claim 17, wherein the non-oxidized silicon surface is selected from the group consisting of silicon, silicon nitride, and carbon.

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