Dynamic uniformity control of magnetron sputtering processes

Abstract

The invention relates to dynamic uniformity control of a magnetron sputtering process. A magnetron assembly for a sputtering apparatus, a method of manufacture thereof, and its use in non-planar substrate coating applications are disclosed. The magnetron assembly (170) comprises first and second support members (171, 172) for mounting the elongate sputtering target (178) and the magnet assembly (130) thereon, respectively; and further comprising independent first and second driver arrangements (175, 176) configured to transmit rotational motion to the first and second support members, respectively. The axes of rotation of the first and second support members are parallel, and preferably substantially coaxial. The magnet assembly (130) includes a longitudinally extending magnetic structure (132) that defines a closed loop confinement area for a plasma generated by the magnetron sputtering apparatus under sputtering conditions. At least one central portion (137) of the magnetic structure terminated by respective ends (138, 139) of the magnetic structure has an azimuthal position that varies between the respective ends of the magnetic structure.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering processes, magnetron sputtering equipment, and coatings obtained therefrom. More specifically, this invention relates to the dynamic uniformity control of material films to be deposited by magnetron sputtering on surfaces having curved geometries or requiring film thicknesses that vary with position.

[0002] Background of the Invention

[0003] Magnetron sputtering is a material layer deposition technology that utilizes the plasma confinement effect of a magnetic field channel to achieve high plasma density and associated sputtering deposition rates. Sputtering coating equipment has been successfully adapted to meet industrial demands for coating large-area substrates in short timeframes, while also achieving excellent control over film properties such as film thickness uniformity. Therefore, magnetron sputtering technology is relied upon in the manufacturing processes of numerous industries, from flat panel display technology (TFTs based on LCD or OLED technology) to low-emissivity glass coating and anti-reflective glass coating. Continuous sputtering coating using in-line deposition systems (where the substrate moves relative to the sputtering target) offers advantages in terms of high throughput and flexibility. Complex coating stacks (e.g., multilayer coatings with different numbers of coating layers and / or different coating compositions) can be reliably sputtered onto moving substrates that travel along the coating production line through multiple sputtering targets arranged in the same or different deposition chambers.

[0004] Direct current (DC), alternating current (AC), or radio frequency (RF) sputtering using planar or cylindrical magnetron configurations is known in the art. These configurations share a common feature: a magnet assembly or magnetron adapted to generate a plasma confinement region, referred to as a raceway, plasma channel, or plasma / magnetic field channel, near the sputtering surface of the planar or cylindrical target. Subsequently, target erosion occurs along the shape of the raceway, and the eroded material is deposited onto the substrate. In a cylindrical magnetron, the target is hollow, and the target material is tubular (i.e., provided as a tube or coated onto a carrier tube). Magnets are assembled into a static magnetic structure mounted inside a rotatable hollow target. During sputtering, rotating the hollow target around its cylindrical axis and around the static magnetic structure mounted therein allows the sputtering target surface to continuously sweep beneath the plasma channel, thereby preventing the formation of erosion grooves in the target and improving target utilization.

[0005] The quality of sputtered products typically depends on, and is also evaluated by, the uniformity of the film thickness deposited on the substrate. Even minute variations in film thickness can lead to suboptimal final product performance and inconsistent quality. Therefore, it is essential to rigorously control the film thickness uniformity across the entire substrate surface. Deviations in the film thickness uniformity of the coating target can be caused by factors such as: non-uniform partial pressure of one or more sputtering gases (e.g., argon or reactive gases), non-uniform magnetic field distribution, non-uniform electric field distribution, non-uniformity of the sputtering target surface (e.g., target surface morphology and / or composition), and geometric positioning deviations of the shielding, anode, or substrate relative to the sputtering target.

[0006] Various techniques have been proposed in the prior art to reduce or prevent deviations in the desired film thickness uniformity, including:

[0007] - To induce minute movements in the magnetic segments, magnetic shunts, and / or substrate of the magnet assembly to compensate for local variations in the thickness of the deposited layer;

[0008] - Cause localized deformation of the magnetic rod in the magnet assembly inside the cylindrical target;

[0009] - Optimize the mechanical position / orientation of the sputtering source, such as adjusting the distance between the sputtering target and the substrate and / or adjusting the electrical power supplied to the sputtering target;

[0010] - Use shimming plates to create shielding openings that vary along the length of the target.

[0011] EP 0820088 A3 discloses a planar scanning magnetron assembly for thin film sputtering on curved substrates. The magnetron includes a flat cam follower plate with multiple guide slots that engage with corresponding profile follower actuators. A vertical positioning rod connects each profile follower actuator to a magnetic segment of the magnetron assembly. A tracking frame connects all profile follower actuators together so that they move collaboratively as the magnetron assembly sweeps across a target assembly. A control system receives height control data and sets the vertical position of each magnetic segment at each scanning position of the magnetron via the individual profile followers. The height control data causes the magnetic segments to move in a predetermined manner according to the set surface profile. The profile follower system of the aforementioned type of magnetron assembly lacks the necessary compactness for installation inside a hollow cylindrical target. Furthermore, the system results in uneven etch profiles on the target assembly, which depend on the individual magnetic segments. This scanning magnetron assembly is unsuitable for high-volume, wide-substrate sputtering deposition.

[0012] WO 2016 / 005476 A1 discloses a magnetron sputtering apparatus equipped with a driver assembly for moving a cylindrical sputtering target along a spatial trajectory. The sputtering target is rotatably mounted on an end block. This trajectory can be defined relative to a curved substrate passing over the sputtering target, such that the distance between the target and the substrate surface remains constant. This ensures that a coating of uniform thickness is deposited on the substrate, which has a single principal curvature direction aligned with the substrate's transport direction. Magnetron sputtering apparatuses of this type with movable end blocks result in a non-fixed sputtering source, making assembly and maintenance more difficult. The end block itself must be located within a vacuum chamber, making it difficult to access for inspection and repair without de-vacuuming. Furthermore, placing the end block in a vacuum significantly increases the difficulty of adequately sealing the end block, the connected driver assembly, and the power and coolant supply lines.

[0013] US Patent 6375814 B1, published on April 23, 2002, discloses a stationary sputtering magnetron with a rotatable cylindrical target and a static magnet assembly. The magnet assembly is adapted to generate elongated plasma raceways on the target surface. The raceways have parallel tracks over most of their length and close at both ends through end regions. The spacing between the raceway tracks is locally increased to significantly affect sputtering deposition onto the substrate. As a result, shielding may no longer be necessary to control film thickness uniformity on the substrate, and the problem of uneven target material consumption at the end regions of the target can be overcome.

[0014] Currently, there is still a need for a fixed cylindrical magnetron sputtering source that is easy to control and can uniformly coat substrates with arbitrary surface curvature directions. Summary of the Invention

[0015] The purpose of this invention is to provide an apparatus and method that can achieve good coating uniformity in the length and width dimensions of a substrate with a curved or inclined surface that is sputtered by a magnetron.

[0016] The above objectives are achieved by the components, apparatus and methods according to the present invention.

[0017] In a first aspect, the present invention relates to a magnetron assembly for a magnetron sputtering apparatus. The magnetron assembly includes: a first support member for mounting an elongated sputtering target; a second support member for mounting a magnet assembly; a first actuator configured to transmit rotational motion to the first support member; and a separate second actuator configured to transmit rotational motion to the second support member, the rotational motion being independent of the rotational motion transmitted to the first support member. The rotation axes of the first and second support members are parallel and preferably substantially coaxial. The magnetron assembly also includes the aforementioned magnet assembly having an elongated magnetic structure extending longitudinally along the rotation axis of the second support member. This magnetic structure defines a closed-loop confinement region for the plasma generated by the magnetron sputtering apparatus under sputtering conditions. A central portion of the magnetic structure terminates at corresponding ends, and this central portion has an azimuth position relative to the rotation axis of the second support member. The azimuth position of the central portion varies between the corresponding ends of the magnetic structure.

[0018] The magnetic structure may include elongated magnetic tracks projecting radially outward from a magnetic substrate member. One or more magnetic tracks may bend along an azimuth direction within the central portion of the magnetic structure. The magnetic substrate member may be a support tube made of magnetic material that acts as a pole shoe relative to the permanent magnet constituting the magnetic tracks.

[0019] According to some embodiments of the invention, a first support member and a first actuator are included in a first end block (e.g., forming a portion of the first end block), and a second support member and a second actuator are included in a second end block (e.g., forming a portion of the second end block). In such embodiments, the two end blocks are opposite to each other and are typically spaced apart in the longitudinal direction by a distance (corresponding to the length of the hollow target), and a magnet assembly and a hollow target surrounding the magnet assembly are mounted on the respective end blocks and extend between the two end blocks.

[0020] According to other embodiments of the invention, the first support member, the second support member, the first actuator assembly, and the second actuator assembly are all contained in the same end block (e.g., forming a portion of the same end block). One end of the magnet assembly and the hollow target surrounding the magnet assembly is mounted on this end block. The other end of the magnet assembly and the hollow target may be a free end (terminated and protected by an end flange), or it may be mounted on a different end block.

[0021] The first drive unit and the second drive unit may each include or be constituted by a drive component. The drive component may include a drive engine or drive force generator (e.g., an electric motor) and a force transmission structure (e.g., one or more of a hydraulic torque converter, gear system, drive chain, or drive belt).

[0022] In a second aspect, the present invention relates to a method for manufacturing a magnetron assembly for a magnetron sputtering apparatus, the magnetron assembly being suitable for sputtering a non-planar substrate in a continuous deposition process, or suitable for sputtering a substrate having a material flux that varies over time. The method includes the following steps:

[0023] - Obtain shape information about the curved substrate to be coated;

[0024] - Provide a magnetic structure as part of a magnet assembly and rotatably mount the magnet assembly on an end block of the magnetron assembly, wherein the magnetic structure extends longitudinally along the rotation axis of the magnet assembly and defines a closed-loop confinement region for the plasma generated by the magnetron sputtering device under sputtering conditions.

[0025] - Based on the obtained shape information about the curved substrate, the shape of the central portion of the magnetic structure is determined, the central portion of the magnetic structure terminating at corresponding ends of the magnetic structure; and

[0026] - Based on the determined shape, the azimuth position of the magnetic structure within the central portion of the magnetic structure is changed, the central portion being arranged between the corresponding ends of the magnetic structure.

[0027] In another aspect, the present invention relates to a method for sputtering coating on curved, non-planar, or inclined substrate surfaces. The method includes the following steps:

[0028] - Transfer the curved substrate to be coated through the magnetron assembly obtained by performing the steps of the method in the second aspect;

[0029] - The rotational motion of the magnet assembly about its axis of rotation is synchronized with the transmission of the curved substrate through the magnetron assembly. The magnet assembly is installed inside a hollow sputtering target, which is rotatably mounted on the end block of the magnetron assembly, such that the rotation axes of the sputtering target and the magnet assembly are substantially parallel.

[0030] According to some embodiments of the present invention, the sputtering coating method further includes the step of: adjusting and maintaining the orientation of the curved substrate relative to the magnetron assembly during transport, such that the curvature axis of the curved substrate is parallel to the rotation axis of the magnet assembly.

[0031] In various embodiments of the invention, the rotational motion of the magnet assembly about its rotation axis can be executed according to a pre-calculated control trajectory of the magnet assembly's rotation angle, for example, assigning a specific rotation angle to each of a plurality of (controlled) time points. During the sputtering deposition process on the substrate surface, the rotation direction of the magnet assembly about its rotation axis can be unidirectional (e.g., clockwise or counterclockwise) or bidirectional (e.g., allowing the magnet assembly to perform both clockwise and counterclockwise rotational motions). The rotational speed of the magnet assembly about its rotation axis can be constant or vary depending on time and / or the position of the substrate relative to the magnetron assembly.

[0032] In another aspect, the present invention relates to a magnetron sputtering apparatus or in-line coating machine equipment, the apparatus or equipment comprising the magnetron assembly described in the first aspect of the present invention.

[0033] According to some embodiments of the present invention, the magnetron sputtering apparatus or in-line coating machine includes the magnetron assembly described in the first aspect of the present invention, and a substrate transport system for transporting one or more substrates through the magnet assembly. A distal plane parallel to the rotation axis of the second support member of the magnetron assembly corresponds to the plane in the substrate transport system through which the substrate is transported by the magnet assembly. The magnetron sputtering apparatus or in-line coating machine may further include an elongated sputtering target mounted on the first support member of the magnetron assembly, and a shielding assembly having an opening adapted to expose a portion of the surface of the sputtering target. The shielding opening extends longitudinally along the direction of the rotation axis of the second support member and is coplanar with a reference line.

[0034] According to the same or different embodiments, the magnetron sputtering apparatus or in-line coating machine includes the magnetron assembly described in the first aspect of the present invention, and a controller. The controller is configured to control the time-varying rotation angle of the magnetron assembly about the rotation axis of the second support member of the magnetron assembly, and to synchronize the rotational motion of the magnetron assembly with the transmission trajectory of the substrate through the magnetron assembly.

[0035] One advantage of this invention is that it enables uniform coating of curved substrates in an online coating machine. Controlled rotation of the magnetic structure with varying angular positions at its center is simpler, faster, and more reliable than complex rotation and adjustment schemes along adjustable magnetic rods at individual nodes.

[0036] Another advantage of this invention is that uniform coating of curved substrates can be achieved through a control method that only requires synchronizing the substrate transport with the rotation angle of the magnet assembly. During sputtering coating, this control method is less prone to errors and more stable in the face of unexpected deviations in process parameters.

[0037] Specific and preferred aspects of the invention are set forth in the appended independent and dependent claims. Features of the dependent claims may be suitably combined with features of the independent and other dependent claims, not merely those expressly set forth in the claims.

[0038] For the purpose of summarizing the invention and its advantages over the prior art, certain objects and advantages of the invention have been described above. It should be understood, of course, that not all such objects or advantages may be achieved according to any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention can be embodied or practiced in a manner that achieves or optimizes one or more advantages as taught herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0039] The above and other aspects of the invention will be apparent from the embodiments described below and will be illustrated with reference to the embodiments.

[0040] Brief description of the attached figures

[0041] The invention will now be further described by way of example with reference to the accompanying drawings, in which:

[0042] Figure 1 Simulation results show the thickness distribution of a layer deposited on a planar substrate surface using a conventional cylindrical magnetron sputtering apparatus.

[0043] Figure 2 and Figure 3 Simulation results show the thickness distribution of a layer deposited on a curved substrate surface by a conventional cylindrical magnetron sputtering apparatus, wherein the substrate surface is curved in a single direction.

[0044] Figure 4 This illustrates how, by synchronously adjusting the substrate transport speed and / or the sputtering target power supplied to a cylindrical magnetron sputtering apparatus, in... Figure 3 The simulation results show the thickness distribution of the layer deposited on the surface of the curved substrate.

[0045] Figure 5 and Figure 6 Simulation results show the thickness distribution of layers deposited on a curved substrate surface with different orientations using a conventional cylindrical magnetron sputtering apparatus, wherein the substrate surface is curved in a single direction.

[0046] Figure 7 This illustrates the adjustment of the magnetic rod via the magnet assembly inside a cylindrical magnetron sputtering device. Figure 6 The simulation results show the thickness distribution of the layer deposited on the surface of the curved substrate.

[0047] Figures 8 to 11Simulation results are shown of the thickness distribution of layers deposited on various curved substrate surfaces using a conventional cylindrical magnetron sputtering apparatus, where these substrate surfaces have principal curvatures along two different directions.

[0048] Figure 12 This illustrates a synchronous adjustment system that combines a cylindrical magnetron sputtering device and a substrate transfer system, in... Figure 11 The simulation results show the thickness distribution of the layer deposited on the surface of the curved substrate.

[0049] Figure 13 This is a perspective view of a magnet assembly that can be used in embodiments of the present invention.

[0050] Figure 14 (A)-(F) show various shapes of magnetic or plasma runways generated by magnetic structures according to embodiments of the present invention.

[0051] Figure 15 and Figure 16 The calculated dependence of the deposition profile and normalized deposition rate on the rotation angle of a conventional magnetic rod with a straight runway geometry is shown.

[0052] Figures 17A to 17C Different views of a magnetron assembly according to an embodiment of the present invention.

[0053] Figure 18 The process of uniformly coating a curved substrate using a sputtering apparatus including a magnetron assembly, according to an embodiment of the present invention, is explained.

[0054] Figure 19 and Figure 20 An alternative magnetron sputtering apparatus according to an embodiment of the present invention is shown.

[0055] Figure 21 A dual magnetron sputtering apparatus according to another embodiment of the present invention is shown.

[0056] Figure 22 A flowchart is provided to explain the steps of a magnetron assembly manufacturing method according to an embodiment of the present invention.

[0057] Figure 23 A magnetron sputtering apparatus according to an embodiment of the present invention is shown.

[0058] These accompanying drawings are merely illustrative and not restrictive. In the drawings, some elements may be enlarged and not drawn to scale for illustrative purposes. Scale and relative scale do not necessarily correspond to an actual simplification of the practice of this invention.

[0059] Any reference numerals in the claims should not be construed as limiting the scope.

[0060] In different accompanying drawings, the same reference numerals refer to the same or similar elements. Detailed Implementation

[0061] The invention will be described with reference to specific embodiments and certain accompanying drawings, but the invention is not limited thereto, but is defined only by the claims.

[0062] The terms "first," "second," etc., used in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe a temporal, spatial, hierarchical, or any other order. It should be understood that the terms thus used are interchangeable where appropriate, and the embodiments of the invention described herein can operate in an order different from that described or illustrated herein.

[0063] It should be noted that the term "comprising" as used in the claims should not be construed as limiting itself to the means listed thereafter; it does not exclude other elements or steps. Therefore, the term should be interpreted as specifying the presence of the features, integers, steps, or components stated as mentioned, but does not exclude the presence or addition of one or more other features, integers, steps, or components, or groups thereof. Thus, the scope of the expression "device comprising means A and B" should not be limited to a device consisting solely of components A and B. It means that for the present invention, the only relevant components of the device are A and B.

[0064] Throughout this specification, the reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention. Therefore, the appearance of the phrase "in an embodiment" or "in an embodiment" in various places throughout this specification does not necessarily refer to the same embodiment. Furthermore, in one or more embodiments, specific features, structures, or characteristics may be combined in any suitable manner, as will be apparent to those skilled in the art from this disclosure.

[0065] Similarly, it should be understood that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, drawing, or description for the purpose of simplification and to aid in understanding one or more of the various inventive aspects. However, this approach to the disclosure should not be construed as reflecting an intention to claim more features than are expressly recited in each claim. Rather, as reflected in the appended claims, inventive aspects lie in fewer features than all the features of a single foregoing disclosed embodiment. Thus, the claims appended to the Detailed Description are thereby explicitly incorporated into this Detailed Description, wherein each claim itself represents a separate embodiment of the invention.

[0066] Furthermore, although some embodiments described herein include some features included in other embodiments but not all other features included in those other embodiments, as will be understood by those skilled in the art, combinations of features from different embodiments are intended to fall within the scope of the invention and form different embodiments.

[0067] Numerous specific details are set forth in the description provided herein. However, it should be understood that embodiments of the invention can be practiced without these specific details. In other instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0068] In the automotive industry, windshields, sunroofs, large display panels, and dashboards often feature complex shapes with non-planar curved geometry. Ultra-wide computer screens with curved display areas have also been commercialized. Similar to traditional planar substrates, these curved or non-planar substrates are typically equipped with anti-reflective coatings, protective coatings, or similar coatings. For these applications, it is essential to achieve uniform coating over a large area of ​​the substrate or workpiece (e.g., 0.3 x 0.4 mm). 2 1.1*1.3m 2 1.5*1.8m 2 1.0*6.0m 2 2.0*2.0m 2 2.0*3.0m 2 Or 2.9*3.2m 2 Furthermore, the tolerance requirements for film thickness uniformity are extremely stringent. It is not uncommon for product manufacturers to require magnetron sputtering equipment to precisely control the film thickness deposited on the substrate within ±5% or less (e.g., to ±3% or ±1%). The curved geometry and complex structure of the substrates requiring uniform coating make controlling coating thickness uniformity in magnetron sputtering equipment even more challenging. The following section briefly discusses the influence of curvature and curvature direction on the uniformity of film thickness to be sputtered onto the substrate surface, as well as possible solutions and their limitations. Historically, sputtered coatings for these applications were deposited on planar substrates before substrate bending processes. In recent years, the substrates to be coated may be bent and pretreated before coating on curved substrates.

[0069] Figure 1A 1.0 m² square planar substrate is shown, along with a simulated deposition thickness using an in-line magnetron sputtering system (target length: 1.5 m, target-substrate spacing: 120 mm). The simulation considers actual process parameters (e.g., power supplied to the sputtering target, gas composition and partial pressure, target and substrate materials, substrate transport velocity, material angle jet flux based on the actual physical dimensions of the target, etc.) as well as the geometry and configuration parameters of the in-line sputtering system, providing an accurate prediction of the expected deposition performance. The predicted deposition thickness is uniform along the transport direction of the substrate relative to the static sputtering source (first direction: the horizontal axis in the figure), but varies along the length axis of the rotating sputtering target (perpendicular to the substrate transport direction, second direction: the vertical axis in the figure). The expected peak-to-peak thickness non-uniformity is approximately 3.3%. While the motion of the substrate through the sputtering target has an averaging effect on the deposition thickness in the first direction, this averaging effect is absent in the second direction. The more stable and reliable the substrate transport system, the better the thickness uniformity achievable in the first direction. For the second direction, different parameters of the sputtering apparatus determine the expected degree and distribution of thickness deviation. These parameters include: the finite length of the sputtering target relative to the substrate (i.e., target-substrate overlap), the normal distance between the upper surface of the substrate (the surface facing the sputtering target) and the surface of the sputtering target, the configuration of the shielding openings (e.g., the shape and width of the shield), the gas distribution within the deposition chamber, the magnetic field strength along the “raceway” (including possible global and local adjustments to the entire or partial magnet assembly), the type of electrical power delivered (e.g., AC, DC, RF power), and the geometry and location of the cathode and anode in the sputtering system.

[0070] Figure 2 and Figure 3 A 1.0 m × 1.0 m base (height values ​​in millimeters) with curved geometry is shown, along with... Figure 1 Simulation results of the deposition layer thickness corresponding to the same online coating machine used on the mid-plane substrate. The substrate surface shown has at least one curvature component in the direction of motion of the substrate through the sputtering source (first direction), i.e., a straight line direction along at least one point on the substrate surface that is tangent to the substrate surface, parallel to the substrate transport axis, and perpendicular to the length axis (central axis, rotation axis) of the rotating sputtering target. The substrate surface is non-planar. Figure 2 and Figure 3 In this context, the substrate orientation ensures that its (unique) principal direction (the eigenvector of the shape operator at a point on the substrate surface, where the principal curvature direction is locally defined) is aligned with the substrate transmission direction, but the corresponding principal curvature values ​​have opposite signs (+ / -0.4 m - 1In both cases, the average thickness non-uniformity along the substrate motion direction dominates the overall thickness non-uniformity distribution, while the average thickness non-uniformity along the target direction (second direction) is comparable to the thickness non-uniformity of the planar substrate. More specifically, Figure 2 The simulated average thickness of the sputtered deposition layer varies along the first direction from -13.0% to +8.0%, and along the second direction from -3.0% to +1.0%. For Figure 3 In the example substrate, the simulated average thickness of the sputtered deposited layer varies along the first direction from -5.0% to +12.0%, and along the second direction from -2.0% to +0.5%. The corresponding peak-to-peak thickness inhomogeneities are 23.5% and 20.2%, respectively.

[0071] Figure 4 Presented with Figure 3 The simulation results for the deposition layer thickness of the same substrate are shown, but a synchronous target power and / or substrate transport speed adjustment technique is used for the online coating machine. As the substrate passes under the sputtering source, the distance between the sputtering source and the curved surface of the moving substrate changes over time. Here, this distance is measured in a third direction (height direction) perpendicular to the first and second directions. The sputtering particle flux at the substrate surface and the associated deposition rate decrease as the target-substrate distance increases. To compensate for the change in the target-substrate distance of the moving substrate, it is preferable to adjust the electrical power supplied to the sputtering target and / or the substrate transport speed in a combined and synchronous manner, such that when the target-substrate distance increases, the electrical power increases and the transport speed decreases; and when the target-substrate distance decreases, the electrical power decreases and / or the transport speed increases. At any given moment, there is no need to significantly compensate for the sputtering particle flux leaving the bombarded target surface along the target length direction. This synchronous control strategy for the static sputtering source and substrate transport device can reduce... Figure 3 Significant variations in the thickness of the sedimentary layer were observed. Figure 4 The simulated peak-to-peak thickness inhomogeneity is now limited to 4.6%, but implementing, calibrating, and monitoring this synchronous control strategy requires additional work.

[0072] Figure 5 and Figure 6 It shows the relationship with Figure 2 , Figure 3 The same curved substrate and the same online deposition machine were used, but the substrate was rotated 90° relative to the sputtering source. Therefore, the orientation of the substrate surface is such that its (only) principal direction is parallel to the length axis of the sputtering target and perpendicular to the substrate transport direction. Currently, the average thickness inhomogeneity along the target axis dominates the overall thickness inhomogeneity distribution, while no significant thickness variation is observed in the substrate transport direction. More specifically, for Figure 5For the example substrate, the simulated average thickness variation of the sputtered deposited layer along the second direction ranges from -20.0% to +7.9%; for Figure 6 The example substrate in the example has a variation range of -6.0% to +12.4%. The corresponding peak-to-peak thickness inhomogeneities are 27.9% and 18.4%, respectively.

[0073] Figure 7 Presented with Figure 6 The simulation results show the deposition layer thickness on the same substrate as the one shown, but an adjustment technique was used to measure the magnetic field strength along the runway of the online coating machine. Figure 3 Conversely, planes normal to the target's length axis now intersect the substrate along straight lines, and points on these lines are approximately equidistant from the sputtering source when passing below it. However, planes normal to the substrate's transport direction intersect the substrate along curves, and points on these curves are at varying distances from the sputtering source when passing below it. Therefore, the distance between the sputtering source and the curved surface of the moving substrate does not change significantly over time, but rather is a function of position along the target's length. This effect can be compensated for by adjusting the magnetic rod inside the sputtering source, thereby obtaining a position-varying magnetic field strength along the length of the sputtering target. Points on the substrate surface farther from the sputtering target surface require a stronger magnetic field than points on the substrate surface closer to the sputtering target surface. Magnetic rod adjustment can effectively reduce... Figure 6 The study observed significant variations in the thickness of the deposited layer, but (e.g., compared to electrical power supply regulation techniques for sputtering targets) its resolution was limited and its speed was relatively slow. Figure 7 The simulated peak-to-peak thickness inhomogeneity is now limited to 1.8%.

[0074] Figures 8 to 11 Examples of more 1.0m × 1.0m curved substrates are provided, along with simulation results of the deposition layer thickness corresponding to the same online coating machine. These substrates have curvature components in both the first and second directions. In ascending order of figure numbers, the corresponding peak-to-peak thickness inhomogeneities are 47.0%, 43.8%, 36.6%, and 44.8%, respectively. It can be seen that the second curvature component further exacerbates the variation in deposition layer thickness, necessitating more complex compensation techniques.

[0075] One solution is to combine the two previously proposed compensation techniques for different curvature directions to form a bidirectional adjustment method. Figure 12 It shows the Figure 11 The simulation results show the deposition thickness of the substrate on an in-line coating machine when the substrate is bidirectionally adjustable (i.e., simultaneously and synchronously adjusting the electrical power supplied to the sputtering target, the substrate transport speed, and the local magnetic rod deformation). This allows the simulated peak-to-peak thickness non-uniformity to be as low as 5.1%.

[0076] Another scenario that might require a bidirectional adjustment method corresponds to a substrate with a single principal curvature direction, where the transmission direction is at an angle to the principal curvature direction, i.e., not aligned with it. For example, Figure 2-3 or Figure 5-6 The curved substrate shown is considered to fall into this category after being rotated 45° around the height axis (third direction), or after being rotated by any other angle that does not align the principal curvature direction with the substrate transport direction. This category also applies to substrates whose principal curvature direction is inclined relative to the first and second directions, but which cannot be easily rotated due to limitations of the substrate handling system, substrate transport system size, sputtering chamber size, etc.

[0077] While this bidirectional adjustment scheme is theoretically acceptable, it is less appealing in practical applications. It requires complex control algorithms that interact with adjustment systems that must be precisely synchronized with the substrate's position and movement relative to the sputtering source. This approach is inherently unstable and prone to unexpected deviations. Furthermore, it necessitates the use of sputtering targets with a specific thickness distribution along their length, dependent on the substrate shape, to counteract the effects of uneven target erosion profiles created along the target's length axis due to magnetic field strength adjustments.

[0078] In a first aspect, the present invention provides a solution to the following problem in online magnetron sputtering coating processes: the surface or surface portion of the substrate to be coated has curvature components in two orthogonal directions (coinciding with the substrate transport direction and the length axis of the cylindrical sputtering target, respectively), which leads to problems such as uneven target erosion and overly complex and error-prone control algorithms. This includes substrate surfaces or surface portions whose principal curvature directions do not coincide with either the substrate transport direction or the length axis of the cylindrical sputtering target. In this case, the projections of the principal curvature directions onto both the substrate transport direction and the length axis of the cylindrical sputtering target are not zero. The present invention also covers substrate surfaces or surface portions with discrete, stepped shape changes (e.g., surfaces or surface portions whose principal curvature directions can be discretely approximated).

[0079] The back surface of the substrate to be coated does not need to be curved; it can be flat. Acute or obtuse angles (e.g., edges) between surface portions on the substrate that are originally flat but may be inclined are considered to have locally infinite curvature and are also within the scope of protection of this invention. For example, multifaceted surfaces or grid surfaces composed of multiple triangles, quadrilaterals, etc., can be approximated as smooth surfaces.

[0080] This invention also provides a solution to the following problem in online magnetron sputtering coating processes: the normal vector of the surface or a portion of the substrate to be coated has components in two orthogonal directions (coinciding with the substrate transport direction and the length axis of the cylindrical sputtering target, respectively). This leads to uneven target erosion and overly complex and error-prone control algorithms. This includes planar or curved substrates with inclined surfaces relative to a reference plane (stretched by two orthogonal vectors along the substrate transport direction and the length axis of the cylindrical sputtering target, respectively). Examples include planar substrates mounted on inclined carriers or inclined support members during transport, and elliptical conical or cylindrical cross-section members.

[0081] Furthermore, the present invention provides a solution to the following problems in the online magnetron sputtering coating process: a material film needs to be deposited on the substrate surface or part of the surface, and the thickness gradient direction of the material film is neither coincident with the substrate transport direction nor with the length axis of the cylindrical sputtering target, or it needs to have a thickness gradient in a second direction and the thickness gradient varies along the substrate transport direction. In this case, there are problems such as uneven target erosion and overly complex and error-prone control algorithms.

[0082] An assembly for a magnetron sputtering apparatus (e.g., a magnetron assembly) according to a first aspect of the invention includes a first support member and a second support member, respectively for mounting an elongated hollow sputtering target and a magnet assembly thereon. The assembly also includes a first actuator and a separate second actuator, the first actuator configured to transmit rotational motion to the first support member and the second actuator configured to transmit rotational motion to the second support member, the rotational motion being independent of the rotational motion transmitted to the first support member. The rotation axes of the first and second support members are parallel and substantially coaxial, in which case they define a common rotation axis. The magnet assembly includes a magnetic structure extending longitudinally along the common rotation axis, which defines a closed-loop confinement region for the plasma generated by the magnetron sputtering apparatus under sputtering conditions. The central portion of the magnetic structure (terminating at corresponding ends of the magnetic structure) has a varying azimuth position relative to the common rotation axis. In other words, the azimuth position of the central portion is not constant but varies between corresponding ends of the magnetic structure. This results in the material flux of sputtered particles leaving the sputtering target surface under sputtering conditions satisfying: (i) non-uniformity along the length axis of the sputtering target; and (ii) dependence on the rotational motion of the magnet assembly mounted on the second support member.

[0083] In the context of this disclosure, the end of a magnet assembly is understood as the portion that limits the extent of the magnet assembly in the longitudinal direction (i.e., along the extension axis of the elongated magnet assembly). When a hollow sputtering target is mounted above the magnet assembly in a manner that surrounds it in the radial direction (i.e., perpendicular to the rotation axis associated with the magnet assembly), the end of the magnet assembly corresponds to the end of the hollow sputtering target. Therefore, the ends of the magnetic raceway and the plasma raceway generated by the magnet assembly are defined by the end of the magnet assembly and have similar longitudinal positions (e.g., coordinates along the rotation axis associated with the magnet assembly). Thus, the end turn of the magnetic raceway or plasma raceway is understood as a turn of a closed-loop path located at one of the two extreme points of the raceway, for example, the farthest point on the raceway that limits its extent along a direction parallel to the rotation axis of the magnet assembly.

[0084] In embodiments of the invention, the sputtering target is a rotating target. It is typically an elongated, hollow rotating body shape, and may have inner and outer surfaces of different shapes extending along an extension axis. In some embodiments of the invention, the sputtering target has a cylindrical or approximately cylindrical outer rotating surface, thereby forming a tubular sputtering target. For example, the inner and outer rotating surfaces are spaced a fixed distance apart in a radial direction perpendicular to the rotation axis, forming a hollow cylinder with fixed inner and outer diameters. Another example is that the inner diameter of the inner rotating surface is fixed (i.e., generated by rotating a straight line parallel to the rotation axis), while the outer diameter of the outer rotating surface of the sputtering target is variable; for example, the outer diameter is constant at the center of the sputtering target but widens towards or at the ends of the sputtering target. Dog-bone or dumbbell-shaped outer rotating surfaces are examples of outer surfaces with variable outer diameters. Advantageously, the widened ends of the sputtering target can partially or completely offset the intensified target erosion (end slotting), which is primarily due to the plasma runway turning sections near these ends under sputtering conditions (changes in plasma density and extended residence time of the target material under plasma bombardment). The widened sections of the sputtering target can result from two scenarios: first, the presence of a thicker reserve of sputtering material in these sections (coated onto a cylindrical outer diameter support tube); and second, the use of a shaped support tube (e.g., a support tube comprising a non-consumable collar welded to the section requiring widening (such as the end section of a normally straight support tube)). On the shaped support tube, the thickness of the sputtering material can be uniform or varied (e.g., the outer diameter remains constant).

[0085] In embodiments of the invention, the material flux of the sputtered particles therefore depends on the rotational motion of the magnet assembly about the rotation axis of the second support member (i.e., the rotation axis of the magnet assembly), and is non-uniform along the normal projection direction on a plane parallel to the rotation axis and away from the magnet assembly. The shape of the magnetic structure can be configured to: at least within a sub-range of the allowable rotation angle of the magnet assembly, cause a significant difference in the sputtered particle material flux along the projection rotation axis direction during sputtering; and / or cause a significant change in the sputtered particle material flux along the projection rotation axis direction when the magnet assembly is rotated during sputtering. In other words, the shape of the magnetic structure can be configured to: at least at one rotation angle of the magnet assembly (preferably within a larger range of rotation angles, e.g., all or almost all allowable rotation angles when sputtering a moving substrate), generate a position-dependent sputtering flux along the rotation axis direction of the second support member. Therefore, a position-varying sputtering flux can also be observed along the length axis of the installed target, resulting in a position-varying sputtering flux along the width dimension of the substrate (e.g., at any given moment during substrate coating). Furthermore, the position-varying sputtering flux caused by the specific fit shape of the magnetic structure along the rotation axis of the magnet assembly also varies with time under the influence of the rotational motion of the magnet assembly. This results in a time- and space-varying sputtering flux along the width dimension of the static substrate, which translates into a position-varying sputtering flux along the length dimension of the moving substrate.

[0086] In embodiments of the present invention, the shape of the magnetic structure can be configured such that, along the rotation axis of the magnet assembly, there is a significant difference in the preferred or dominant sputtering direction of the target material, and the preferred sputtering direction changes over time as the magnet assembly rotates.

[0087] The azimuth position of the magnetic structure varies along its central portion, and can be at least 20° in any direction (i.e., positive or negative angular offset), for example, at least 30°, 40° or greater, 70° or greater, 90° or greater, 180° or greater, and up to a maximum of 360°. Therefore, within the central portion of the magnetic structure, there may be two distinct points whose azimuth coordinates differ from the axis of rotation of the magnet assembly by at least 20° in any direction, for example, at least 30°, 40° or greater, 70° or greater, 90° or greater, 180° or greater, and up to a maximum of 360°. This complete 360° angular change in the azimuth position of the magnetic structure corresponds to the winding of the magnetic structure around its axis of rotation, for example, the winding of a magnetic path or track on the outer circumferential surface of a support tube. If the winding is inherently helical, then the complete 360° angular change in the azimuth position of the magnetic structure also allows the pitch to be defined as the axial / longitudinal spacing between two points on the magnetic structure whose azimuth coordinates differ by 360° (one complete turn). The azimuth position of a magnetic structure can be the azimuth coordinates of at least one of its magnetic components (such as a magnetic busbar, magnetic track, magnetic array, magnetic leg, or magnetic path). Alternatively, the azimuth position of a magnetic structure can be determined by the azimuth coordinates of one of its associated magnetic poles.

[0088] The first and second support members can be mounting flanges or end plates. They can be contained in an end block. At least one end block can contain a first drive assembly and a second drive assembly; for example, a single end block can contain both the first drive assembly and the second drive assembly, or two opposing end blocks can each contain a corresponding one of the first drive assembly and the second drive assembly.

[0089] The radial position of the magnetic structure can be adjusted in the following ways: globally by moving the magnetic support structure radially inward or radially outward, or locally by deforming the magnetic support structure at a specific position along a common axis of rotation.

[0090] Figure 13This is a perspective view of a magnet assembly 130 according to an embodiment of the present invention. The magnet assembly is in the form of an elongated magnetic rod 131, which is tubular (e.g., a hollow cylinder) and slidably fitted onto and securely fixed to a hollow support tube 133. Alternatively, the magnetic rod may be formed directly on the support tube 133 or become an integral part of a patterned support tube. The magnetic rod acts as the pole shoe for three magnetic tracks or magnetic arrays 134-136, which protrude radially outward (i.e., in the radial direction "r") from the outer surface of the magnetic rod 131. The magnetic rod connects to the magnetic poles of adjacent magnetic arrays 134-136 that face or contact the magnetic rod 131. Therefore, the magnetic flux is concentrated in the radially inward magnetic rod 131 of the magnet assembly. The magnetic rod may be made of soft iron or other magnetically conductive materials (e.g., nickel, cobalt, etc.). The three magnetic tracks are all elongated magnetic components extending in the longitudinal direction "z". Each track can be made of a specially shaped permanent magnet (e.g., soft iron), or assembled from multiple / arrays of independent permanent magnets or magnetic segments arranged in a chain-like structure and following a specific path (e.g., a parametric curve) that describes the azimuth coordinates of one or more magnetic tracks (e.g., each magnetic track) along the track length direction, for example as a function of the longitudinal distance "z". The magnetic poles of independent magnets arranged along the same track point in the same direction, for example, all north poles or all south poles are radially outward. The permanent magnets of each track can be rare-earth magnets. A central track 135 is arranged between two peripheral or side tracks 134, 136. For example, an equidistant spacing between the central track and each of the two side tracks can be selected. The radially outward magnetic poles associated with adjacent tracks are arranged alternately, for example, the radially outward magnetic pole of track 134 is the south pole, the radially outward magnetic pole of track 135 is the north pole, and the radially outward magnetic pole of track 136 is the south pole. Ends 138 and 139 connect the two side tracks 134, 136 at each end of the longitudinally extending magnetic structure 132, thereby establishing a closed-loop magnetic raceway for the magnetic pole lines associated with the side tracks. This, in turn, induces a closed-loop plasma raceway in the magnetron assembly using the magnet assembly 130 under sputtering conditions. In this example, ends 138 and 139 are turning segments of the magnetic structure at an angle (e.g., right angle). In other embodiments of the invention, the ends may have different shapes, such as circular turning segments. The radially outward ends of the magnetic tracks 134-136 may be machined into a specific profile to conform to the circular shape of the inner wall of the cylindrical target or magnet assembly housing. Notches (which may form angled or inclined bottom surfaces) may be provided as mounting bases for individual magnets on each track. In embodiments of the invention, the azimuth position of the magnetic structure 132 (e.g., the path followed by at least one magnetic track or at least one magnetic component protruding from the magnetic structure) is... Significant changes occur between the respective ends 138 and 139. In this embodiment, the magnetic structure 132 has a protrusion 137 in its central portion, which is located between the respective ends and includes a region located between the ends 138 and 139 as measured along the longitudinal coordinate "z".

[0091] The magnetic structure of the magnet assembly and the resulting closed-loop plasma runway extend longitudinally along the axis of rotation of the magnet assembly (e.g., a common axis of rotation defining the length direction of the sputtering target). They typically extend over a large portion of the target length (e.g., the entire or nearly entire length of a cylindrical target) and are longer than their width. In embodiments of the invention, the magnetic structure of the magnet assembly and the resulting closed-loop plasma runway may be asymmetrical with respect to any plane containing the axis of rotation of the magnet assembly. Furthermore, the magnetic structure of the magnet assembly and the resulting closed-loop plasma runway may lack symmetry with respect to planes perpendicular to the axis of rotation (e.g., a central plane intersecting the magnetic structure at an intermediate position between the endpoints of the turning segments / ends of the magnetic structure, and / or a central plane intersecting the cylindrical target at an intermediate position between the two end faces of the cylindrical target). Preferably, during sputtering operations, the magnetic structure induces only one closed-loop plasma runway on the target surface. This closed-loop runway typically consists of two distinct, elongated paths extending along the length direction of the magnet assembly, connected by two different end segments (i.e., turning portions) facing both ends of the magnet assembly. For a target already installed under sputtering conditions, the turning portion of the plasma raceway is generated above the corresponding end of the target surface. The magnetic raceway corresponding to the plasma raceway can be defined as: the closed-loop profile line with the largest tangential component of the magnetic field generated by the magnetic structure at a predetermined radial distance from the rotation axis of the magnet assembly (e.g., at the target surface).

[0092] The azimuth positions (angular positions, angular coordinates) of each part of the magnetic structure are best defined by the corresponding azimuth positions of the induced plasma runway, and are always considered locally at specific points on the rotation axis of the magnet assembly. In other words, the azimuth, radial, and axial positions of the plasma runway or the magnetic structure below it can be defined using a cylindrical coordinate system whose longitudinal / cylindrical axis is coaxial with the rotation axis. In most embodiments of the invention, the radial position of the plasma runway is preferably constant, unless the target tube may exhibit certain morphological features (e.g., static morphological features, such as a shaped support tube or a sputtered material thickness with a specific profile on the support tube; or dynamic morphological features, i.e., morphology formed during use, such as that caused by uneven target erosion). In this case, the (local) azimuth position of the plasma runway is... A function that is only for the axial / vertical coordinates, i.e. This functional relationship can also be applied to target tubes with radially symmetrical topography. Alternatively, the azimuth position of each part of the magnetic structure can be defined by its local orientation toward a radially outward magnetic pole toward the inner wall of the cylindrical target; if the magnetic structure consists of one or more magnet arrays, it can be defined by the local orientation of the lines or curves connecting the radially outward magnetic poles of adjacent magnets belonging to the same array. These magnetic poles can be permanent magnet poles or induced magnetic poles of pole shoes that redirect and shape the magnetic field generated by the magnetic structure. Although the shape of the plasma runway is defined by a continuous and (in most cases) smooth path, the magnetic structure beneath it used to induce the plasma runway may be partially non-smooth, for example, containing sharp turns, bends, etc.

[0093] According to embodiments of the invention, the azimuth position of the central portion of the magnetic structure varies between its ends, i.e., it is not constant. Here, the end of the magnetic structure refers to the portion terminating the magnetic structure in the direction of the common axis of rotation. The ends of the magnetic structure typically have a 180° turning shape (e.g., a U-shaped turn or a variant thereof) and are located at or near the corresponding ends of the cylindrical target. The azimuth position of the central portion of the magnetic structure can vary globally, for example, continuously or stepwise between the ends, and this variation covers a large area of ​​the target length. The azimuth position of the central portion of the magnetic structure can vary linearly between the ends or follow a curved path. For example, the azimuth position of the central portion of the magnetic structure can be based on a second-order or higher-order curve. Or any other (multi-valued) function variation. The azimuth position of the central portion of the magnetic structure can be varied in such a way that the magnetic structure and the plasma track induced therefrom contain at least one protrusion, deflection, fold, or fold. In embodiments of the invention, the azimuth position can be varied in such a way that the magnetic structure and the plasma track induced therefrom are not parallel to a common axis of rotation for most of their length. Furthermore, the azimuth position can be varied in such a way that the magnetic structure and the plasma track induced therefrom are curved in the middle portion (e.g., the middle position between the ends of the magnetic structure). In some embodiments of the invention, the central portion can be connected to the ends by a transition region. An angular offset or discontinuity between the central portion and the ends can be eliminated by the transition region. When referring to the curvature, path direction, or tangent of the shape / profile of the plasma track (or the magnetic structure below which induces the track), these parameters all refer to parameterized curves. This curve describes the azimuth position of the plasma / magnetic runway as a function of a position parameter "s" along the curve, such as describing the azimuth position of the forward path, return path, or both along the central portion of the plasma / magnetic runway. A straight path is a path with zero curvature. Common choices for the position parameter "s" include the axial position "z" along the rotation axis of the magnet assembly, or the arc length associated with the plasma / magnetic runway. The forward and return paths will also be referred to below as the "legs" of the plasma / magnetic runway.

[0094] The aforementioned considerations regarding the azimuth position variation of the magnetic structure and its induced plasma runway apply to at least one track segment or path connecting the corresponding ends of the magnetic structure, for example, to one or two track segments. In some embodiments of the invention, the azimuth position variation of the magnetic structure and its induced plasma runway applies only to one of the two track segments (e.g., the middle segment between the corresponding ends), while the other track segment is substantially straight. The advantage of a straight track segment is its ease of manufacture. In other embodiments of the invention, the azimuth position variation of the magnetic structure and its induced plasma runway applies simultaneously to both track segments. This associates the azimuth position of one track segment in the central portion with the azimuth position of the other track segment, and the two track segments are substantially equidistant. The advantage of equidistant track segments is that a larger flux of sputtered particle composite material can be obtained and controlled through the distance between the two track segments. In still other embodiments of the invention, the azimuth position variation of the magnetic structure and its induced plasma runway applies independently to both track segments; therefore, the two track segments are not necessarily equidistant. The advantage of such embodiments is greater design flexibility.

[0095] According to some embodiments of the invention, the azimuth position change (angle change) of the magnetic structure (e.g., the azimuth position of one or two track segments of the magnetic structure) is at least 20° at the central portion between the ends of the magnetic structure. In other words, if both points on the common axis of rotation are located at the central portion of the magnetic structure, the azimuth position of the magnetic structure (e.g., one track segment) at one point on the common axis of rotation differs from the azimuth position of the magnetic structure at the other point on the common axis of rotation by at least 20° (e.g., between 20° and 40°, or even 40° and above). This change can occur in one or both directions, for example, a positive angle change of at least +20°, a negative angle change of at least -20°, or a positive angle change of at least +20° followed by a negative angle change, or vice versa.

[0096] Figure 14Elongated closed-loop plasma tracks of various shapes induced by a magnet assembly according to embodiments of the present invention are illustrated. Typically, the shape of the plasma track follows the shape of the magnet assembly beneath it, such as a line, track, or profile associated with one or more magnetic poles in the magnet assembly toward the inner wall of a target tube with a target material.

[0097] Figure 14 The single closed-loop runway 141 shown in (A) is induced near the outer surface of a cylindrical hollow sputtering target 140. Magnetic field lines generated by an elongated magnetic structure (not shown) rotatably mounted inside the hollow target tube pass through the target tube wall. The runway 141 includes a central portion “CP” terminated by two opposing ends 142a. The azimuth positions of the two track segments 143a, 144a vary independently between the respective ends 142a. The first track segment 143a is only slightly curved, while the second track segment 144a includes a convex region 145 with greater curvature. The two track segments 143a, 144a are not equidistant, and the runway 141 is asymmetrical with respect to any plane containing the cylindrical axis of the target tube 140.

[0098] Figure 14 The single closed-loop plasma runway shown in (B) has left-right mirror symmetry. This mirror plane includes the cylindrical axis of the target tube and the two endpoints of the runway along the length of the cylindrical target tube. The azimuth positions of the two orbital segments 143b and 144b vary in opposite directions between the corresponding ends of the plasma runway. The protruding regions of the two orbital segments 143b and 144b are opposite to each other.

[0099] exist Figure 14 In the exemplary runway shown in (C), two track segments 143c and 144c are formed at equal intervals. Therefore, their azimuth directions change synchronously between their respective ends 142c. The two track segments form a common bulge along their central portion. Unlike the aforementioned runway, the first track segment 143c has a concave profile. The azimuth coordinates of the two ends 142c are substantially equal, but the path direction near the ends (the tangential direction of the track segment) does not match the path direction at both ends of the central bulge. The transition region “TR” bridges the difference in path direction and achieves a smooth change in curvature.

[0100] Figure 14 (D) also has equidistant track sections 143d and 144d, but... Figure 14 Unlike the runway example in (C), the curvature of both track segments is zero, meaning their respective angular positions within the central section "CP" are linear functions of the axial coordinate "z". This results in an angular offset at the positions of the two end segments at 142d. The transition region 'TR' compensates for the tilt angle. The differences. Figure 14The exemplary and non-limiting runway configuration in (D) provides a good solution to the problem of how to progressively increase the deposition rate in a specific area on the substrate and maintain this distribution along the direction of substrate movement. Larger azimuth offsets between the ends (top and bottom) result in sharper, narrower local areas of additional deposition, while smaller azimuth offsets result in more blurred, wider local areas of additional deposition. Rotating magnet assemblies (e.g., magnetic rods) can allow the additional deposition area to move across the substrate. Figure 14 In a variant of the exemplary runway shown in (D), there is no transition region “TR”, and / or the angular offsets at the two end positions are much larger. For example, the two equidistant orbital segments of the plasma runway wrap around the outer surface of a hollow sputtering target by 180° or more (e.g., 360° or more). In this case, the angular offsets at the two end positions are 180° and 360°, respectively. In the former case, the two ends are located on opposite sides of the target circumference (e.g., front and back); in the latter case, the two ends are located on the same side of the target circumference (e.g., both on the front).

[0101] Unlike all the aforementioned AD-type track examples, Figure 14 The runway (E) also lacks symmetry relative to a mirror plane perpendicular to the longitudinal axis of the hollow target cylinder. Track segment 143e is essentially a straight line, i.e., it has a fixed angular position along the length of the cylindrical target, while the azimuth position of the second track segment 144e increases linearly at the beginning of the central portion and then decreases linearly thereafter. In this example, the azimuth coordinate changes smoothly but rather abruptly. The end 142e is spoon-shaped, for example, locally widened. This has the advantage of reducing the faster target erosion and trench formation observed near the ends of conventional rotating sputtering targets.

[0102] Figure 14 The runway (F) has the following characteristics: its corresponding end 142f is connected to the hook 147 at the central portion, and the central portion includes a first track segment or forward path 143f with folds, thereby forming a bag-shaped or sac-shaped region 146. In this bag-shaped region of the central portion of the runway, the function of the track segment 143f... It is a multivalued function and consists of multiple branches. Similarly, in the hook region 147, the function... It is also a multivalued function, consisting of multiple branches. Multivaluedness can be eliminated through parametric transformations (e.g., conversion to arc length). For the specific runway shown, higher sputtering yields can be obtained in the folded regions (hook-like, bag-like regions) of the runway. This is advantageous in sputtering processes requiring high-intensity local material flux. To compensate for accelerated target erosion (the additional residence time of the target under plasma conditions) and achieve good overall target utilization, the sputtering target can be equipped with additional sputtering material in specific regions corresponding to the runway folded regions. Unlike all the aforementioned AE-type runway examples, the plane perpendicular to the rotation axis of the magnet assembly and... Figure 14 The (F) track intersects at more than two points (e.g., three or four points).

[0103] The shape of the magnet assembly (e.g., the magnetic pole line, track, or profile associated with at least one magnetic pole) and the shape of the closed-loop plasma runway it induces are not limited to the examples described above. Other shapes may also be used, such as profiles resembling a boomerang, crescent, banana, elongated S-shape, hourglass, etc. These shapes or profiles can be segmented or globally defined by spline curves, Bézier curves, or other types of mathematical curves (e.g., clamshell curves, vine-leaf curves, biangle curves, Hippopedes curves, Cassini ovoid curves, inverted kidney curves, or non-intersecting plane curves of cubic, quartic, or higher orders).

[0104] In some embodiments of the invention, the plane containing the rotation axis of the magnet assembly intersects the central portion of the magnetic structure at a maximum of four points (e.g., four points or two points). The azimuth position of the magnetic structure can vary over most of the central portion (e.g., the entire central portion). Furthermore, the azimuth position at the middle of the magnetic structure (i.e., the middle position between corresponding ends) can differ from the azimuth position at the junction of the ends and the central portion of the magnetic structure. The azimuth position of the magnetic structure may include at least one inflection point, for example, one, two, or more inflection points in the central portion.

[0105] Variations in the azimuth position of the magnetic structure's central portion cause a corresponding tilt angle in the forward and / or return paths of the closed-loop plasma runway, the tilt angle depending on the axial coordinate of the path along a common rotation axis. Therefore, according to embodiments of the invention, varying the azimuth position of the central portion of the magnetic structure between its ends produces the following effect: the material flux of sputtered particles leaving the target under operating conditions has an azimuth (direction) component varying along the target length. Thus, deposition rate and film thickness can be customized in the longitudinal direction of the target (corresponding to the width dimension of the substrate). Deposition film thickness control along the substrate width direction can be combined with the aforementioned deposition film thickness control method along the substrate length direction, for example, controlling the instantaneous transport velocity of the substrate relative to the static sputtering source, and / or controlling the electrical power applied to the target based on the position of the substrate relative to the static sputtering source. Furthermore, in addition to varying the azimuth position of the central portion of the magnetic structure, a magnetic rod adjustment technique for locally adjusting the magnetic field strength along the target length direction can be employed to further improve, fine-tune, or compensate for the effect of target erosion on the uniformity of deposition film thickness along the substrate width direction.

[0106] Figure 15 and Figure 16The calculated dependencies of the deposition profile and normalized deposition rate with respect to the tilt angle (i.e., rotation angle) of the magnetic structure are shown. The magnetic structure is tilted inside the hollow target tube, thereby changing the angle between the preferred sputtering direction and the substrate normal. In other words, the magnet assembly is rotated to different tilt angles relative to a 0° reference angle, at which the magnetic structure faces a direction perpendicular to the substrate (transfer) plane to minimize the distance between the sputtering source and the substrate. This calculated dependency can be used in methods for designing and fabricating the shape of the central portion of the magnetic structure, as well as in methods for controlling sputtering processes on non-planar substrates (e.g., by rotating the magnet assembly to different tilt angles).

[0107] More specifically, Figure 15 A two-dimensional plot is shown illustrating the interdependence of the deposition profile (deeper shading for higher deposition amounts, lighter shading for lower deposition amounts) with respect to the substrate's position relative to the target (x-axis) and the increment of the angular position of the magnetic structure relative to its reference angle (tilt angle) (y-axis). The deposition process takes place on a planar static substrate beneath a single cylindrical target. If the substrate is directly below the target's length axis (vertical projection of the rotation axis), it is located at the origin. This simulation uses a typical 90 mm target-substrate spacing. As expected, tilting the substrate away from the normal position (0° reference angle) diverts material flux to different locations on the substrate, while simultaneously reducing material density. Furthermore, tilting also produces a tailing effect of low material flux deposition at locations further away on the substrate.

[0108] Figure 16 The relative deposition rate as a function of the magnetic structure rotation angle is shown. The plotted deposition rate considers the integral amount of sputtered material collected by the substrate along the direction of motion at a specific tilt angle deviating from the substrate normal. The solid line represents the ideal case of an unshielded coating machine, where most of the sputtered material is collected at some point on the substrate. The relative deposition rate is normalized to the unshielded case with the substrate vertically exposed. When tilting is introduced, the amount of material reaching the substrate decreases. Simulation results show that when the tilt angle is 90°, only about 45% of the sputtered material is still deposited on the substrate. More practical magnetrons would be arranged in a compact chamber, and there may be shielding between the substrate and the cylindrical target tube. Figure 15 Vertical lines are drawn on a two-dimensional plot to define the positions of linear shielding in the coating chamber. The deposited material needs to be integrated between these shieldings, for example, vertical lines are drawn at -240 mm and +240 mm respectively. Figure 16The dashed lines in the diagram correspond to a shielding opening symmetrical with respect to the cylindrical target and 480 mm wide. Even without tilting, approximately 10% of the material is collected onto the shield. The presence of the shield significantly increases the effect of tilting the magnetic structure (i.e., the magnetron), and also enhances the sensitivity of the relative deposition rate to the tilt angle. At a tilt angle of 90°, the relative deposition rate decreases by approximately five times compared to the untilted case, with almost all sputtered material lost to the shield. The presence of an adjacent magnetron with a reverse inward tilt angle can mitigate material loss to some extent.

[0109] Figure 17A This is a cross-sectional view of a magnetron assembly according to an embodiment of the present invention. The magnetron assembly 170 includes an end block with an end block housing 177, which can be mounted (e.g., side-mounted) to the wall of a vacuum chamber. Two electric motors 175 and 176 are mounted at the rear of the end block housing as a first drive assembly and a second drive assembly. This rear portion can be disposed outside the chamber wall, exposed to the atmosphere. For ease of understanding, the middle portion of the end block is shown as hollow, but typically contains various components, such as (but not limited to) a power transmission device, a water collector, a bearing system for rotatable components such as drive shafts, a sealing box for vacuum and water, and a force transmission system (e.g., drive shafts or spindles, gear systems, etc.) related to the driving force / torque generated by the two drive assemblies 175 and 176. When the magnetron assembly 170 is mounted for a sputtering apparatus (e.g., an in-line coating machine), the front portion of the end block typically extends into the vacuum of the chamber. The front portion includes a first support member 171 in the shape of a rotatable hollow cylindrical mounting flange or a thick annular member with a mounting flange, and a second support member 172 in the shape of a rotatable drive spindle with a widened end. The rotation axes of the first support member 171 and the second support member 172 are coaxial, defining a common rotation axis. The rotational motion of the first support member 171 and the second support member 172 about the common rotation axis is generated by a first actuator 175 and a second actuator 176, respectively, and can be transmitted to the two support members via their respective drive shafts or drive spindles. The first support member 171 is adapted to receive a tubular sputtering target (not shown) and position it relative to the common rotation axis. A clamping structure 173 secures the target in its mounted state. Similarly, the second support member 172 is adapted to receive a magnet assembly 130 and position it relative to the common rotation axis. The magnet assembly shown in the figure is consistent with the reference figure. Figure 13The magnet assembly described is similar. In this example, the second support member 172 has a central hole sized to slidably receive the support tube 133 of the magnet assembly. A sliding key 174 facilitates insertion of the support tube 133 into the central hole and prevents relative rotation between the second support member 172 and the support tube 133. The support tube 133 also serves as a fluid channel for coolant to enter the magnetron assembly 170 (coolant return channel and end assembly cap not shown). The gap between the outer surface of the second support member 172 and the inner surface of the first support member 171 may contain bearings or lubricant, while ensuring that the rotational movements transmitted to the first and second support members are mechanically decoupled.

[0110] Figure 17B It shows the relationship with Figure 17A The same magnetron assembly is used, except that a cylindrical sputtering target 178 is added and mounted on a first support member 171. Furthermore, an end cap or flange 179 is connected to the end of the sputtering target 178 away from the end block. This end cap or flange redirects coolant flow from the interior of the hollow support tube 133 to an annular gap region formed between the inner wall of the cylindrical target 178 and the outer surface of the magnet assembly 130 or the protective shell surrounding the magnet assembly 130. To prevent corrosion of the magnetic components of the magnet assembly by coolant (e.g., water), a protective shell may be provided around the magnet assembly 130. In other embodiments of the invention, the magnetic components of the magnet assembly may be coated with a corrosion-resistant material layer. The distal end of the support tube 133 may be fixed to the end flange 179 as a centering element (e.g., by a locking pin) to fix the axial position of the magnet assembly 130 relative to the target 178. The centering component includes a sliding bushing, a bearing system, etc., which can fix the magnet assembly to the end flange 179 without hindering the end flange from rotating together with the target 178.

[0111] Figure 17C for Figure 17A The diagram shows a perspective view of the magnetron assembly. The magnet assembly 130 is securely connected to the second support member. It can be seen that the magnetic structure 132 of the magnet assembly has a protrusion formed at the center portion between its respective ends.

[0112] In some embodiments of the invention, the magnet assembly may have a segmented magnetic structure, for example, comprising at least two consecutive segments in the longitudinal direction of the magnetic structure (corresponding to the length direction of the sputtering target). For example, corresponding ends and central portions of the magnetic structure may serve as segments, facilitating the replacement of ends with different shapes for different target designs, such as better adaptation to dog-bone targets. The support for the magnetic structure may be magnetic (e.g., a magnetic support tube) and act as a pole shoe. The support for the magnetic structure may be in the shape of a hollow cylinder or its corner segments. Alternatively, the support for the magnetic structure may be provided as multiple support plates mounted at a specific azimuth angle relative to the rotation axis of the magnet assembly. However, support tubes or segmented support tubes with fewer segments are easier to assemble and align. The radial position of the magnet assembly can be adjusted globally; for segmented magnet assemblies, local adjustments are also possible, for example, by mechanical inserts such as shims, or by hydraulic, pneumatic, or electric actuators.

[0113] One advantage of this invention is that it allows for the uniform deposition of coatings over large areas of substrates or workpieces that are non-planar (e.g., curved surfaces or surfaces with varying height profiles, or mounted at an angle relative to the substrate bearing plane or the substrate transport direction). Typical width and length dimensions of a large-area (curved) substrate are, for example, 0.3 x 0.4 m. 2 1.1*1.3m 2 1.5*1.8m 2 1.0*6.0m 2 2.0*2.0m 2 2.0*3.0m 2 Or 2.9*3.2m 2 Another advantage of this invention is that the thickness of the deposited film on large-area, non-planar, or inclined substrates can be precisely controlled, for example, within a range of + / -5% or less, such as + / -3% or + / -1%.

[0114] Another advantage of this invention is that it allows for parallel sputtering of multiple substrates with different heights (thicknesses) or surface orientations, for example, by mounting these substrates on a common transport frame or arranging them in a column substantially parallel to the length axis of the rotating target.

[0115] Figure 18This paper explains how a uniform coating can be deposited on a curved substrate using a magnetron sputtering apparatus comprising the magnetron assembly described in the first aspect of this invention. The curved substrate surface facing the target has a complex overall shape. Along the length of the substrate (consistent with the substrate transport direction), the substrate surface shape can be described as: a flat leading edge; a recessed middle portion (with raised, sloping edges on both sides of the recess, these edges defining the substrate width in a direction parallel to the rotation axis of the rotating target center); and a trailing edge extending from the middle portion (with a more pronounced recess and higher sloping edges on both sides). The three stages AC of the curved substrate sputtering coating process correspond to three moments when the leading edge, middle portion, and trailing edge of the substrate are located below the sputtering target, respectively. The figure also shows the angular or azimuthal position of the plasma runway in each of the three stages, which varies according to the rotation angle of the magnet assembly inside the hollow target tube. Throughout the three stages AC, the sputtering target continuously rotates about a common rotation axis, independent of the rotational motion of the magnet assembly about the same axis inside the hollow target.

[0116] The plasma runway is shaped like a "pith-style" hat, resembling half a lemon or a coat hanger. At its center, it comprises a straight track segment and a curved track segment, which are connected and terminated by a turning segment at the ends. The curved track segment forms a bulge in the central region of the cylindrical target, the amplitude of which decreases towards the terminal turning segment of the plasma runway, and connects to the straight track segment in the transition region between the central and end regions of the runway.

[0117] Starting in Phase A, a generally straight segment of the plasma runway faces and is oriented towards the leading edge of the substrate. The sputtered particle flux, primarily generated by the straight segment of the plasma runway, is substantially uniform across the substrate width. This results in a uniform thickness profile of the deposited material on the substrate surface along the target length. In Phase B, both the straight and curved segments of the plasma runway face and are oriented towards the middle portion of the substrate, although their tilt angles differ. As the rotation angle of the magnet assembly adjusts according to the substrate's position relative to the target, the straight segment gradually tilts outward along the moving leading edge of the substrate, while the convex portion of the curved segment gradually faces the bottom of the substrate surface depression. Therefore, the contribution of the sputtered particle flux generated by the curved segment of the plasma runway increases significantly, compensating for the increasing distance between the substrate surface depression and the sputtering target. Simultaneously, the contribution of the sputtered particle flux generated by the straight segment and the ends of the plasma runway decreases, compensating for the decreasing distance between the outer edge of the substrate surface convex portion and the sputtering target. Through this combination, a uniform deposition rate and film thickness can be achieved across the entire width of the substrate's middle portion. In stage C, the magnet assembly has been rotated to the point where only the protrusions of the curved track segment face the trailing edge of the substrate. The particle flux of the sputtered material is primarily generated by the protrusions of the curved track segment, concentrating the emission of sputtered particles at the center of the sputtering target. This balances the disadvantages of the maximum spacing between the recessed bottom of the substrate surface and the sputtering target, as well as the disadvantages of the minimum spacing between the tilted side edge and the sputtering target.

[0118] At the end of stage C, when the substrate leaves the sputtering zone or exits the deposition chamber through the gate valve, the magnet assembly can rotate back to its homing position, such as the initial rotation position (in which the magnet assembly is tilted so that the straight track section faces the entrance slit of the deposition chamber). Other homing positions can also be defined. The magnet assembly stops at the homing position until the next substrate enters the deposition chamber, after which it gradually rotates to the configuration shown in subsequent stages A through C. In continuous deposition processes, the above process is repeated for each new substrate entering the deposition chamber. Thus, the magnet assembly performs an oscillating, rocking motion about its rotation axis, synchronized with the position of the substrate relative to the sputtering source, but not necessarily a steady motion.

[0119] Figure 19This is a schematic diagram of a magnetron sputtering apparatus according to an alternative embodiment, in which the rotational movement of the magnet assembly about its axis of rotation is continuous and unidirectional. A second substrate transport system or device is advantageously positioned opposite the first substrate transport system or device, such that a cylindrical target with the magnet assembly is located between the two systems. This magnetron sputtering apparatus can be a horizontal or vertical in-line coating machine. The substrates transported by the first and second systems move in opposite directions. An advantage of this embodiment is that the magnet assembly does not need to be rotated back to its original position before starting the coating process on a new substrate. Therefore, higher throughput can be achieved.

[0120] Figure 20 for Figure 19 An alternative to the illustrated embodiment is presented. A second magnet assembly is installed inside the cylindrical target, thereby simultaneously inducing another closed-loop raceway. Two substrates are mounted on their respective transport devices, with their surfaces to be coated facing each other. During synchronous coating, the substrates are transported in opposite directions. A dark area shield (not shown) can be arranged around the cylindrical target to prevent sputtered material from leaving the target in an undesirable direction.

[0121] Figure 21 This is a schematic diagram of a dual magnetron sputtering apparatus according to yet another embodiment. The dual magnetron sputtering apparatus includes two substantially coaxially aligned sputtering sources. Each sputtering source includes a component according to a first aspect embodiment (e.g., an end-block magnetron assembly) and a cylindrical target mounted on a support member of the assembly. The magnetic structures and their induced plasma raceways are preferably offset mirror images of each other, but are not limited thereto. The rotational movement of the magnetic structure inside each target tube is synchronized with the position of the moving substrate relative to the dual sputtering sources. In some embodiments, the rotational movement of the magnetic structure inside the second target tube is locked with the rotational movement of the magnetic structure inside the first target tube, such that the two magnetic structures and their generated plasma raceways move synchronously but in opposite directions. Figure 18 The implementation examples are similar, Figure 21 The image, shown from top to bottom, illustrates three distinct stages of the coating process as seen by an observer moving along the substrate. As the substrate passes the dual sputtering sources, the magnetic structure inside the target tube rotates, causing the non-uniform thickness profile along the substrate width (corresponding to the length direction of the elongated target) to change at different sputtering stages.

[0122] In a stage of the sputtering coating process ( Figure 21 In the upper part of each plasma runway, the two basically equidistant orbital segments form raised regions that face each other and point to the same area on the substrate surface (not shown). This results in an increased deposition rate and sputtered film thickness in the middle region of the substrate surface (corresponding to the central portion of the target). In another stage of the sputtering coating process ( Figure 21In the middle section), the raised regions formed by the two plasma raceways are inclined away from each other and point towards different areas on the substrate surface. Simultaneously, the transition regions formed by substantially equidistant track segments between the central portion and ends of each plasma raceway now face each other and point towards the same area at each end of the substrate surface. This results in a nearly uniform deposition rate and sputtered film thickness along the width dimension of the substrate surface (corresponding to the central portion of the target). In another stage of the sputtering coating process ( Figure 21 In the lower part of the substrate, the raised regions formed by the two plasma runways are further tilted away, so that they no longer face the substrate surface. Furthermore, the transition regions between the central and end portions of the plasma runways are now also tilted away from each other and point towards different areas of the substrate surface. This results in a reduced deposition rate in the middle region of the substrate surface, leading to a depression in the sputtered film. Therefore, a non-uniform film can be deposited on a planar substrate, and the deposited film thickness can be precisely controlled locally. Conversely, for curved substrates where the local target-substrate spacing changes during substrate transport, a uniform film can be deposited across the entire substrate, consistent with the way the film thickness / sputtered material flux density changes on a planar substrate at different sputtering stages.

[0123] Although this example shows a magnetron sputtering apparatus with two sputtering sources, more sputtering sources can be added along the transport path of the substrate within the deposition chamber. The distance between adjacent similar target tubes can preferably be selected such that the target material leaving one target tube is partially sputtered and deposited onto one or more adjacent target tubes.

[0124] In the described embodiments of the invention, the shape and curvature of the magnetic structure of the magnetron assembly, under sputtering conditions, cause a significant difference in the radially outward sputtered particle flux (radial component) along the target length direction and at least at one rotation angle of the magnet assembly (e.g., at any rotation angle of the magnet assembly). In other words, the radial component (understood as a vector field) of the sputtered particle flux is a function of the axial position along the common rotation axis of the hollow target and the magnet assembly, and varies significantly along the target length axis (especially between different portions of the central portion of the magnetic structure and / or between the central portion and the ends of the magnetic structure). In the embodiments of the invention, the shape and curvature of the magnetic structure cause a significant variation along the target length direction in the flow rate (understood as a scalar field) of the sputtered particle flux through an arbitrary distant plane parallel to the common rotation axis of the hollow target and the magnet assembly, at least at one rotation angle of the magnet assembly (e.g., at any rotation angle within a predetermined rotation angle range). This flux rate may also vary significantly in a direction perpendicular to the target length direction. The distal plane parallel to the common axis of rotation may correspond to the transport plane of the substrate as it moves along the sputtering target and passes through it, such as a plane that is the same as or parallel to the substrate's conveyor belt or movable fixed frame. Furthermore, the shape and curvature of the magnetic structure make the sputtered particle flow rate through the distal plane parallel to the common axis of rotation a dynamic quantity that varies significantly as the magnet assembly rotates around the common axis of rotation under sputtering conditions. For example, the sputtered particle flow rate through the distal plane parallel to the common axis of rotation along a reference line is time-dependent, for example, defining a time-varying relationship (e.g., a curve or profile) between the deposited film thickness and its position along the width dimension of the substrate. This reference line may correspond to the intersection of the distal plane parallel to the common axis of rotation and a plane containing the common axis of rotation, for example, a plane that is also perpendicular to the distal plane, such that the reference line is the normal projection of the common axis of rotation onto the distal plane.

[0125] In another aspect, the present invention relates to a method for manufacturing a magnetron assembly according to an embodiment of the first aspect. A magnetron assembly manufactured by such a method is advantageously used as part of a magnetron sputtering apparatus for continuous deposition processes on non-planar substrates.

[0126] Figure 22A flowchart illustrating the steps of a magnetron assembly manufacturing method according to an embodiment of the present invention is provided. In step 2201, surface shape information about a curved substrate is obtained. This information can be retrieved or extracted from a CAD file of the curved substrate, for example, by loading a CAD file from a data storage device (e.g., a file server) and extracting the surface shape from the loaded CAD file. The surface shape information can be obtained directly from the file or derived from other parameters (e.g., from the width and height dimensions of the substrate, its surface category in a set of predefined surface categories (e.g., parabolic, hyperbolic, saddle-shaped, etc.), and its principal curvature values). Alternatively, the surface shape can be reconstructed from a point cloud obtained by direct shape or height profile measurement (e.g., optical distance measurement, laser surface scanning technology, time-of-flight camera, etc.). Other means for obtaining substrate surface shape information are known and readily available to those skilled in the art.

[0127] In step 2202, the data processing device receives substrate shape information as input. In step 2203, additional information regarding the geometry and configuration of the online coating machine can be provided to the data processing device, such as the target material, minimum target-substrate spacing, shielding geometry, substrate orientation during transport, substrate transport trajectory through the deposition chamber, sputtering process parameters, etc. Based on the information received from steps 2202 and 2203, the data processing device determines the optimal shape of the central portion of the magnetic structure of the magnetron assembly in step 2204.

[0128] Determining the optimal shape may include: determining the optimal shape of the magnetic components in the central portion of the magnetic structure, the global and / or local curvature, the protruding walls or tracks of the magnetic components in the central portion of the magnetic structure, or the pole lines of equal poles connecting adjacent magnets in a magnet array assembled on a pole shoe. The shape and curvature of other parts of the magnetic structure (e.g., transition regions or end / U-shaped turning sections) may also be optimized. To generate the desired spatial magnetic field distribution, the use of pole shoes or magnetic shunts, magnets of different sizes and shapes, and magnetic materials with adjusted energy products (BH) may be considered. The shape of the central portion of the magnetic structure is optimized for optimization targets / variables (e.g., the uniformity of the thickness of the deposited layer across the entire substrate surface).

[0129] Step 2204 may include sub-step 2204a: running a coating process simulation model, assuming the substrate is formed based on the received substrate shape information, to predict optimization variables (e.g., predicting overall film thickness uniformity). Figure 15 and Figure 16Reference curves and graphs can be used for this purpose. Alternatively, an alternative model of the coating process can be implemented, taking the received substrate shape information as input. Then, in step 2204b, the shape of the central portion of the magnetic structure is adjusted in a manner that further maximizes or minimizes the optimization variables (shape parameter search). For example, the initial shape of the central portion of the magnetic structure can start from two straight paths of a conventional raceway, and finding a better shape for the central portion can be formulated as a curve fitting problem (e.g., spline interpolation). The quality of each fit (e.g., spline) is then evaluated using a predictive method (e.g., a simulation model or an alternative model). Substeps 2204a-b can be repeated to iteratively improve the shape of the central portion.

[0130] According to some embodiments of the invention, the shape of the central portion of the magnetic structure can be optimized in conjunction with one or more variables of the coating process (the following is a non-exhaustive list): the control trajectory of the rotational position of the magnet assembly, the improved transfer trajectory of the substrate, and the control trajectory of the electrical power applied to the target. The rotational position of the magnet assembly is preferably synchronized with the position of the substrate relative to the sputtering target. The control trajectory or transfer trajectory of the jointly optimized process variables is preferably sent back to a data storage device for storage. A drive assembly suitable for the rotating magnet assembly is typically provided, which may require absolute positioning and appropriate angular velocity control.

[0131] Next, a magnetic structure is provided as part of the magnet assembly, and the azimuth position of at least its central portion of the magnetic structure varies between corresponding ends of the magnetic structure according to the optimal shape determined in step 2204. This may include adjusting the position of individual magnets in a magnet array attached to a pole shoe, or machining the magnetic rod into a predetermined shape using a soft iron material (e.g., cutting, milling). In step 2206, the magnet assembly is rotatably mounted on at least one end block of the magnetron sputtering apparatus such that the magnetic structure extends longitudinally along the rotation axis of the magnet assembly. Optionally, the performance of the substrate of the magnetron sputtering apparatus, which is composed of the magnetron assembly manufactured by performing the manufacturing method steps, after coating can be measured, and the deviation of this performance from a target value can be fed back to step 2204. This deviation can be used to further optimize the shape of at least its central portion of the magnetic structure during a redesign or product improvement cycle. The measured properties of the substrate after coating may include film thickness, film thickness uniformity, film density, film composition, and / or any other film properties (e.g., mechanical properties (such as hardness, stress, roughness, etc.), optical properties (such as refractive index, absorptivity, etc.) or electrical properties (such as resistance, etc.)).

[0132] The manufacturing method described above is merely exemplary and can be similarly applied to the manufacturing of magnetron assemblies to achieve non-uniform, customized coatings on planar substrates.

[0133] The present invention also relates to the application of a magnetron assembly according to the first aspect embodiment in a sputtering coating process for non-planar substrates (e.g., curved substrates). The magnetron assembly can be obtained by performing the steps of the aforementioned manufacturing method. The sputtering coating process includes conveying the curved substrate to be coated through the magnetron assembly, for example by mounting the curved substrate on a carrier or frame of a horizontal or vertical conveying system (such as a roller or belt conveyor system). Preferably, during conveying, the orientation of the curved substrate relative to the magnetron assembly should be such that the curvature axis of the curved substrate is parallel to the rotation axis of the magnetron assembly, and this orientation is maintained during conveying. The sputtering coating process also includes synchronizing the rotational movement of the magnetron assembly inside an elongated rotating sputtering target with the conveying trajectory of the curved substrate through the magnetron assembly. The rotating sputtering target and the magnetron assembly are mounted on the same end block, and their rotation axis is parallel to and preferably coaxial with the rotation axis of the magnetron assembly. Typically, during sputtering, the sputtering target rotates about its rotation axis. A separate drive system (e.g., motor and belt system, gear system, or even direct drive system) is used, different from the drive system used for the rotating magnet assembly, to transmit rotational motion to the sputtering target. The synchronization of the rotational motion of the magnet assembly inside the rotating sputtering target with the transport trajectory of the substrate through the sputtering source can be executed by a controller. Figure 22In step 2204 of the embodiment, the controller may load and use the control trajectory stored on the data storage device to determine control signals or signal sequences for the magnet assembly actuator. The controller precisely determines the timing and sends the control signals to the magnet assembly actuator. Sensor data (e.g., position data regarding the moving substrate) may be provided to the controller for analysis, timing, and feedback control of the magnet assembly actuator. For example, position sensors are positioned at the inlet and outlet slits of the deposition chamber, and optionally, position sensors may also be positioned along the transport path of the substrate through the deposition chamber; these sensors send measurement data to the controller. Once the substrate is detected at the inlet slit of the deposition chamber, the controller can initiate the rotational movement of the magnet assembly by generating and applying a control signal to the magnet assembly actuator. Similarly, once the substrate is detected at the outlet slit of the deposition chamber, the controller can force the magnet assembly back to its homing position by generating and applying an appropriate control signal to the magnet assembly actuator. The controller may analyze the measurement data collected by the position sensors installed between the inlet and outlet slits to detect any deviation between the actual trajectory of the substrate passing the sputtering source and the planned trajectory. The controller can utilize the detected deviation to generate corresponding control signals and send them to the actuator equipment to adjust, correct, or fine-tune the rotational motion of the magnet assembly. Additional measurement systems (e.g., spectral optical measurement systems) can be installed inside or at the coating production line to measure the film properties of the substrate. In addition to the measurement data from the position sensor, deviation and correction data can be derived (or alternatively) from measurement data collected by one or more additional measurement systems, and corresponding feedback signals can be sent to the controller to adjust or fine-tune the motion of the magnet assembly. Therefore, in embodiments of the invention, a fully automated feedback control method for the rotational motion of the magnet assembly can be realized. Preferably, the controller is configured to support and execute a control loop for the rotational motion of the magnet assembly.

[0134] In another aspect, the present invention relates to a magnetron sputtering apparatus or in-line coating machine equipment, the apparatus or equipment comprising the magnetron assembly described in the first aspect of the present invention.

[0135] Typically, a magnetron sputtering apparatus includes a vacuum chamber with an inlet slit and an outlet slit through which the substrate to be coated continuously enters and exits the deposition chamber. The inlet and outlet slits may be a pair of gate valves connecting the deposition chamber to a loading lock, a purge chamber, or other deposition chambers along the sputtering apparatus's coating production line. A transport device, such as rollers or a conveyor belt, transports the substrate to be coated through the deposition chamber and past the sputtering source. During transport, the substrate is preferably fixed to a substrate holder or frame. Magnetron sputtering apparatuses can be configured as horizontal or vertical coating machines. In a horizontal design, the surface of the substrate to be coated is parallel to the ground and perpendicular to the direction of gravity; in a vertical design, the surface of the substrate to be coated is perpendicular to the ground and oriented in the direction of gravity. The sputtering source typically includes an end block (e.g., side-mounted or recessed) mounted within the vacuum chamber, which interfaces with external non-vacuum components of the sputtering apparatus. Specifically, this interface provides a coolant feedthrough, an electrical feedthrough, and optionally a communication channel for sensor and control data. A force transmission structure may also be arranged within the end block and partly within the interface. This structure independently transmits the driving force from the external actuator to the first and second support members of the magnetron assembly, thereby independently transmitting rotational motion to the first and second support members. Coolant (typically water) is typically required to remove heat generated during sputtering from the tubular target and internal components of the magnetron assembly, while simultaneously supplying electrical power to the rotating target. The end block also provides electrical insulation components to protect accessible portions of sensitive electronic equipment and the magnetron housing from the high-power electrical signals applied to the target during sputtering. Furthermore, the end block provides a sealing box for liquid and vacuum sealing of the coolant circuit to prevent liquid leakage, venting into the deposition chamber, and deposition chamber contamination.

[0136] Figure 23The diagram illustrates a cross-sectional view of a magnetron sputtering apparatus 230, which includes components according to the first aspect. The magnetron assembly includes at least one end block 238 mounted within a vacuum chamber 231. Separate actuators (not shown) (e.g., motor-belt or motor-gear systems) for a first and second support member of the magnetron assembly may be compactly arranged within the end block 238 or housed in an external drive housing connected to the chamber wall. In the latter case, a force transmission structure or component disposed and extending through an interface of the end block can adequately transmit the generated driving force; this interface may also include feeders for coolant and electrical power signals. Alternatively, coolant and / or electrical feeders may be arranged in an opposing second end block. If a second end block is present, it may also include one of the two actuators and a corresponding support member. The force transmission structure may include two separate drive shafts or spindles, on which flanges or discs are respectively mounted as the first and second support members. Alternatively, the ends of the drive shafts or spindles may be adapted to directly receive and support the target and magnet assembly. In the magnetron sputtering apparatus 230, a cylindrical target 236 is mounted (e.g., clamped) on a rotatable first support member (not shown), and a magnet assembly 237 is mounted on a rotatable second support member (not shown). In this example, the rotation axes of the first and second support members are coaxial, defining a common rotation axis “R”. In other embodiments of the invention, the rotation axes of the first and second support members may be parallel but offset from each other. The magnet assembly 237 includes a tubular magnetic component (e.g., a hollow soft iron cylinder) that acts as a pole shoe, is securely mounted on a support tube that also carries coolant, and rotates with the support tube. Furthermore, the support tube is securely mounted on a second support member (e.g., a mounting flange) and rotates with the second support member; in embodiments of the invention, this can be achieved via a connected drive shaft. The magnetic structure 242 of the magnet assembly 237 is formed by three rows of magnets 242 (e.g., three magnet arrays or magnetic tracks). The magnets in the center row have associated magnetic poles of a first magnetic polarity near the target 236 (i.e., away from the tubular magnetic component and support tube), and the magnets in the two outer or side rows have associated magnetic poles of a second magnetic polarity opposite to the first magnetic polarity near the target 236 (i.e., away from the tubular magnetic component and support tube). The magnets in the center row and / or outer rows may have a shaped top or may be slightly tilted relative to each other (e.g., through angled notches in the tubular magnetic component for placing and securing the respective magnets) to better fit the circular inner surface of the target 236. A protective tube or housing (not shown) for the magnet assembly may be arranged circumferentially around the magnetic structure 242 between the magnetic structure 242 and the target 236 to prevent corrosion of the magnet assembly by a coolant (e.g., water). In the figure, the dark area of ​​the magnetic structure 242 corresponds to the outer wall of the curved area of ​​the magnetic array in the central portion of the magnetic structure.Under sputtering conditions of a magnetron sputtering apparatus (i.e., when an electrical signal is supplied to the installed target tube 236), the magnetic structure 242 will induce a plasma raceway or plasma channel 241.

[0137] The substrates 235a-b to be coated continuously enter and exit the deposition chamber 231 through corresponding slits 232, 233. A conveyor belt 234 transports the substrates 235a-b through the chamber 231 and past the sputtering source. As shown, the substrates 235a-b may have a height profile, inclined surface, or curved surface in the substrate transport direction “X”, which causes variations in the minimum distance between the target and points on the substrate surface to be coated. Furthermore, the substrate surface may have a height profile or surface curvature in the direction of the common rotation axis “R”. To obtain a uniform coating thickness on the substrate surface, the sputtering flux reaching the substrate surface must be dynamically adjusted according to the position of the substrate relative to the sputtering target. Similarly, to accommodate curved and / or irregularly shaped substrate surfaces, the sputtering flux may also vary along the common rotation axis “R”. More generally, the desired material flux can be determined for each point on the substrate surface to be coated, or for each cell of a mesh (containing multiple cells) generated based on the substrate surface. Preferably, the precise shape of the substrate surface to be coated is known in advance, for example, determined by distance or surface scanning measurements (e.g., optical ranging or time-of-flight measurements) performed outside or inside the vacuum chamber (e.g., in the loading lock section), or extracted from a CAD file. As explained in the aforementioned method, the desired shape of the magnetic structure (especially the parametric curve describing the magnetic runway path in the central portion of the magnetic structure) and the associated control trajectory of the rotational motion of the magnet assembly can be calculated based on the desired material flux distribution along the substrate length (along the "X" axis) and width (along the "R" axis), taking into account the geometry of the coating region in the sputtering apparatus (e.g., target-substrate reference spacing, shielding geometry, target-substrate overlap, etc.). The shape and curvature of the magnetic structure 242 of the magnet assembly 237 closely match the calculated shape, ideally a perfect match. Different magnet assemblies 237 can be designed for substrates of different types and shapes and replaced in different production batches. The controller 239 is configured to receive the control trajectory of the magnet assembly 237 rotating about a common rotation axis "R" and generate corresponding control signals for adjusting the angular position of the magnet assembly 237. The control trajectory and corresponding control signals define a specific rotation angle of the magnet assembly 237 as a function of the substrate's position relative to the sputtering target; more specifically, as a function of the position of the substrate relative to the rotation axis "R" projected onto a reference plane parallel to the transport plane of the conveyor belt 234. The relative position of the substrate can be inferred from the time the substrate enters the chamber 231 through the inlet slit 232 and the predetermined or measured transport speed of the conveyor belt 234. The position sensor 240a determines the moment the substrate enters the chamber 231 and sends a trigger signal or transmits the entry moment to the controller 239, which uses this information to synchronize the controlled rotational motion of the magnet assembly 237 (i.e., by controlling the second actuator) with the trajectory of the substrate as it passes through the deposition chamber.Additional position sensors 240b and 240c can be arranged along conveyor belt 234 to accurately determine the substrate's position within the deposition chamber during transport. This sensor information, along with other sensor information (e.g., sensor information related to process parameters such as gas partial pressure, target temperature, electrical power supplied to the target, and magnetic field strength along plasma runway 241), can be advantageously transmitted to controller 239 for feedback control and to detect potential malfunctions or critical operating conditions of sputtering apparatus 230. In other words, additional sensor data is received as feedback input data by controller 239, which executes the control loop. This allows controller 239 to immediately correct the rotation angle of magnet assembly 237 and / or change the transport speed of conveyor belt 234 when a deviation from expected sensor data is detected, and / or due to pre-characterization defects in the magnetron sputtering apparatus. Deviations requiring feedback control may include abnormal motion during substrate transport, abnormal rotation of magnet assembly 237 around rotation axis "R," etc. Pre-characterization defects of the sputtering apparatus may include factors such as: slowly changing target erosion profiles, deviations between the actual manufactured shape of the magnetic structure 242 and the calculated shape (and such deviations cannot be compensated for in an appropriate manner, such as by a splitter along the magnetic raceway), and small differences in the substrate surface shape between samples (e.g., differences measured before the substrate is loaded into the chamber 231).

[0138] The aforementioned considerations regarding coating thickness also apply to the uniformity of other film properties: optical film properties (e.g., uniform refractive index, reflection coefficient, extinction coefficient, etc. on the coated substrate), electrical film properties (e.g., uniform thin-film resistance on the substrate), magnetic film properties (e.g., uniform magnetoresistance or magnetic tunneling resistance on the substrate), mechanical film properties (e.g., uniform roughness, hardness, stress, elasticity, etc. on the substrate), or morphological film properties (e.g., uniform crystal structure, crystal orientation, density, etc. on the substrate). The position sensor 240b at the exit slit 233 can detect the moment when the coated substrate is about to leave the deposition chamber 231 and generate a trigger signal, causing the controller 239 to initiate a homing sequence, rotating the magnet assembly 237 back to the starting angle. Advantageously, in a continuous coating process, the trailing edge of the current coating substrate 235a corresponds to the leading edge of the next substrate 235b, which is identical to the current substrate 235a but rotated 180° relative to it. This eliminates the need for a magnet assembly repositioning sequence between two consecutive substrates 235a and 235b. Instead, it suffices to simply reverse the time-varying rotational angular trajectory between the two consecutive substrates.

[0139] Furthermore, measurements can be taken after the coating process and behind the coated area to understand the distribution of deposited material on the substrate (in both width and length directions). Then, the collected measurement data can be used to further fine-tune the sputtered material flux at or near the substrate surface by adjusting one or more of the following: changing the control parameters in the parametric controller algorithm control loop, changing the shielding opening, and adjusting the magnet assembly (global and / or local repositioning, manual and / or online adjustment).

[0140] In embodiments of the invention, if a shielding assembly with a shield for the sputtering target is provided, the shielding opening is coplanar with the reference line, i.e., coplanar with the normal projection of the rotation axis of the second support member onto a distant plane (e.g., the transport plane as the substrate passes the magnet assembly and the sputtering target). That is, sputtering can be performed along a direction perpendicular to the outer surfaces of the magnet assembly and the sputtering target towards the exposed top surface of the substrate below the sputtering target. In such embodiments of the invention, the shielding opening extends longitudinally along the rotation axis of the second support member and is configured to expose a portion of the outer surface of the sputtering target. The shielding opening may be symmetrical about a plane perpendicular to the outer surface of the sputtering target and containing the reference line; for example, in the chamber of the sputtering apparatus, the shielding opening is parallel and aligned (i.e., without offset) with the sputtering target. Sputtering along a direction perpendicular to the exposed top surface of the substrate below the sputtering target has additional advantages compared to sputtering along an acute angle: higher efficiency (higher deposition rate), higher yield, and reduced debris formation on the shield, thereby reducing the risk of sample defects and impurities on the coated surface.

[0141] In variations of the magnetron sputtering apparatus, multiple similar sputtering targets and magnetron assemblies (e.g., at least two similar sputtering sources) are mounted in the same deposition chamber along the coating production line. This offers the added advantage of reduced material loss sputtered onto the shield. Conversely, multiple sputtering sources can sputter against each other, depositing target material onto each other's surfaces. In embodiment variations using multiple sputtering sources with similar magnet assemblies, the magnetic structures of adjacent assemblies can be offset mirror images of each other (the mirror plane passes through the rotation axis "R" and is offset relative to the relevant rotation axis of the adjacent assembly). Furthermore, the second actuators of the two adjacent assemblies are preferably configured to synchronize the rotational movement of one of the respective second support members with the rotational movement of the other, for example, rotating to the same angle, opposite angles, or scaled-down angles, and time offsets / delays may exist in the drive signals. Controller 239 can be programmed to coordinate additional synchronization between the multiple magnetron assemblies.

[0142] Although the invention has been described and illustrated in detail in the accompanying drawings and the foregoing description, such description and illustration are to be considered illustrative or exemplary, and not restrictive. The foregoing description details certain embodiments of the invention. However, it will be appreciated that the invention can be practiced in many ways, however detailed the foregoing description may appear in the text. The invention is not limited to the disclosed embodiments.

[0143] By studying the accompanying drawings, this disclosure, and the appended claims, those skilled in the art can understand and implement other variations of the disclosed embodiments when practicing the claimed invention. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite articles "a" or "an" do not exclude a plural. A single processor or other unit may perform the functions of several items recited in the claims. The mere fact that certain measures are stated in mutually different dependent claims does not imply that combinations of these measures cannot be advantageously used. Computer programs may be stored / distributed on suitable media (such as optical storage media or solid-state media supplied together with or as part of other hardware), but may also be distributed in other forms (such as via the Internet or other wired or wireless telecommunications systems). Any reference numerals in the claims should not be construed as limiting the scope.

Claims

1. A magnetron assembly (170) for a magnetron sputtering apparatus, comprising: A first support member (171) and a second support member (172) are respectively used to mount an elongated sputtering target (178) and a magnet assembly (130) thereon; A first drive assembly (175) and a separate second drive assembly (176), the first drive assembly being configured to transmit rotational motion to the first support member and the second drive assembly being configured to transmit rotational motion to the second support member, spaced apart from the rotational motion transmitted to the first support member, wherein the rotation axes of the first and second support members are parallel and preferably substantially coaxial; and The magnet assembly (130) includes an elongated magnetic structure (132) extending longitudinally along the rotation axis (R) of the second support member, the central portion (137) of the magnetic structure terminating at corresponding ends (138, 139), and the magnetic structure defining a closed-loop confinement region for the plasma generated by the magnetron sputtering device under sputtering conditions. The central portion (137) of the magnetic structure has an azimuth position relative to the rotation axis of the second support member. The azimuth position of the central portion varies between the corresponding ends of the magnetic structure. The shape of the magnetic structure (132) is adapted to produce significant differences in the material flux of the sputtered particles at different points along a reference line, which is defined as the normal projection of the axis of rotation of the second support member onto any distant plane parallel to the axis of rotation of the second support member.

2. The component as claimed in claim 1, characterized in that, The magnetic structure and the plasma confinement region defined therefrom are asymmetrical with respect to any plane of the rotation axis (R) containing the second support member.

3. The component as described in claim 1 or 2, characterized in that, The shape of the magnetic structure (132) is adapted to cause a significant time-varying variation in the material flux of the sputtered particles at the different points along the reference line when the magnet assembly (130) is rotated during sputtering.

4. The component as claimed in any of the preceding claims, further comprising the elongated sputtering target for mounting on the first flange, the sputtering target being a cylindrical target.

5. The component as claimed in claim 4, characterized in that, The outer diameter of the cylindrical target varies along the direction of the rotation axis of the first support member.

6. The component as claimed in any of the preceding claims, characterized in that, The magnetic structure (132) includes at least two magnetic tracks (134, 136) in its central portion, the magnetic tracks being interconnected through the respective ends (138, 139) of the magnetic structure, and the azimuth position of one of the magnetic tracks in the central portion (137) of the magnetic structure (132) varies by at least 20°.

7. The component as claimed in claim 6, characterized in that, The azimuth position of each of the two magnetic orbitals within the central portion (137) of the magnetic structure (132) varies by at least 20°.

8. The component as claimed in claim 7, characterized in that, The at least two magnetic tracks (134, 136) are spaced apart at a constant distance in the azimuth direction throughout the central portion of the magnetic structure.

9. The component as claimed in any of the preceding claims, characterized in that, The azimuth position of the central portion of the magnetic structure The magnetic structure varies linearly between its respective ends.

10. The component as claimed in any one of the preceding claims, characterized in that, The respective ends of the magnetic structure have different azimuth positions relative to the rotation axis of the second support member.

11. A magnetron sputtering apparatus comprising components as described in any of the preceding claims and a substrate transport system for transporting one or more substrates through the magnet assembly, wherein a distal plane parallel to the rotation axis of the second support member corresponds to the plane in the substrate transport system through which the substrates are transported through the magnet assembly.

12. The magnetron sputtering apparatus of claim 11, further comprising an elongated sputtering target (178) mounted on the first support member (171) and a shielding assembly having an opening adapted to expose a portion of the surface of the sputtering target, the shielding opening extending longitudinally along the direction of the rotation axis of the second support member and coplanar with the reference line.

13. A magnetron sputtering apparatus comprising the components as claimed in any one of claims 1 to 10 and a controller (239) configured to control a time-dependent rotation angle of the magnet assembly (130) about the rotation axis of the second support member, and to synchronize the rotational motion of the magnet assembly with the transfer trajectory of the substrate through the magnet assembly.

14. The magnetron sputtering apparatus of claim 13, further comprising an elongated sputtering target (178) mounted on the first support member (171), a substrate transport system (234) for transporting one or more substrates (235a-b) through the sputtering target, and position sensors (240a-c) arranged along the substrate transport system, wherein the position sensors are configured to detect the elapsed time of each substrate relative to the position sensors, and the controller (239) is further configured to synchronize the rotational motion of the magnet assembly with the transport trajectory of the substrate based on the elapsed time of the substrate detected by the position sensors.

15. A magnetron sputtering apparatus comprising a plurality of magnetron assemblies (170) as claimed in any one of claims 1 to 10 and a substrate transport system having a predetermined substrate transport direction, wherein the rotation axes of the second support members of the plurality of magnetron assemblies are oriented substantially parallel and spaced apart by a predetermined distance along the substrate transport direction, wherein the magnetic structures of any two adjacent assemblies of the plurality of magnetron assemblies are associated by mirror transformation and / or scaling transformation, and wherein the second driver equipment of any two adjacent assemblies of the plurality of magnetron assemblies is configured to synchronize or receive control signals such that rotational motion transmitted to one of the respective second support members is synchronized with rotational motion transmitted to the other of the respective second support members.

16. A method for manufacturing a magnetron assembly (170) for a magnetron sputtering apparatus (230), the magnetron assembly being adapted to sputter-deposit a non-planar substrate in a continuous deposition process, the method comprising the steps of: Obtain shape information about the curved substrate (235a-b) to be coated; A magnetic structure (132) is provided as part of a magnet assembly (130), and the magnet assembly is rotatably mounted on an end block of the magnetron assembly, wherein the magnetic structure extends longitudinally along the rotation axis of the magnet assembly and defines a closed-loop confinement region for the plasma generated by the magnetron sputtering device under sputtering conditions. Based on the obtained shape information about the curved substrate, the shape of the central portion (137) of the magnetic structure (132) is determined, and the central portion of the magnetic structure is terminated by the corresponding ends (138, 139) of the magnetic structure. as well as Based on the determined shape, the azimuth position of the magnetic structure within the central portion of the magnetic structure is changed, the central portion being arranged between the respective ends of the magnetic structure.

17. The method as described in claim 16, characterized in that, Determining the shape of the central portion of the magnetic structure includes optimizing the shape for the layer uniformity of the sputtered material layer to be deposited onto the curved substrate.

18. A method for sputter coating a curved substrate, comprising the following steps: The curved substrate to be coated is transferred through the magnetron assembly (170) obtained by performing the steps of the method as described in claim 16 or 17; The rotational motion of the magnet assembly (130) about its rotation axis is synchronized with the transmission of the curved substrate through the magnetron assembly. The magnet assembly is installed inside a hollow sputtering target (178), which is rotatably mounted on the end block of the magnetron assembly, such that the rotation axes of the sputtering target and the magnet assembly are substantially parallel.

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