Improved process chamber cleaning

Abstract

There is provided a method of cleaning a process chamber, the method comprising: supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber comprising a plurality of lamps configured to heat the interior volume of the rapid thermal processing chamber during a first time period; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to methods and related equipment for cleaning process chambers (such as rapid heat treatment chambers). Background Technology

[0002] Process chambers used to process substrates (e.g., semiconductor substrates) are typically cleaned after processing multiple substrates. Process chambers used for annealing substrates, such as rapid thermal processing chambers, require periodic cleaning due to venting from the substrates processed within the chamber. Degassing results in deposits on inner surfaces, such as quartz shields that protect chamber walls or other components (e.g., reflectors) from such deposits. Cleaning process chambers including such quartz shields involves disassembling the process chamber to allow for the cleaning of internal components, such as the quartz shields. This disassembly results in significant downtime, thereby increasing production costs.

[0003] Therefore, there is a need for improved methods and equipment to reduce downtime caused by cleaning process chambers (such as rapid heat treatment chambers for annealing substrates). Summary of the Invention

[0004] In one embodiment, a method for cleaning a process chamber is provided, the method comprising: a) supplying plasma from a remote plasma source to an internal volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat the internal volume of the rapid thermal processing chamber; and b) providing heat from the plurality of lamps to heat the internal volume of the rapid thermal processing chamber during the first time period while the plasma from the remote plasma source is supplied to the internal volume of the rapid thermal processing chamber.

[0005] In another embodiment, a method for cleaning a process chamber is provided, the method comprising: a) supplying one or more cleaning gases to an internal volume of a rapid heat treatment chamber during a first time period, the rapid heat treatment chamber including a plurality of lamps configured to heat the internal volume of the rapid heat treatment chamber; b) providing heat from the plurality of lamps during the first time period to heat components in the internal volume to a first temperature to generate free radicals of the one or more cleaning gases in the internal volume, wherein the first temperature is at least 500°C; and c) during a second time period occurring after the first time period, stopping the supply of the one or more cleaning gases to the internal volume and supplying a purifying gas to the internal volume.

[0006] In another embodiment, a method for cleaning a process chamber is provided, the method comprising: a) supplying plasma from a remote plasma source to an internal volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat the internal volume of the rapid thermal processing chamber; b) providing heat from the plurality of lamps to heat the internal volume of the rapid thermal processing chamber during the first time period while the plasma from the remote plasma source is supplied to the internal volume of the rapid thermal processing chamber; and c) stopping the plasma supply from the remote plasma source to the internal volume during a second time period. The supply of the first time period to the internal volume of the rapid heat treatment chamber, and the supply of a clean gas to the internal volume of the rapid heat treatment chamber during the second time period following the first time period; d) supplying one or more clean gases to the internal volume of the rapid heat treatment chamber during the third time period; e) supplying heat from the plurality of lamps during the third time period to heat the components in the internal volume to a second temperature to generate free radicals of the one or more clean gases, wherein the second temperature is at least 500°C; and f) ceasing the supply of the one or more clean gases to the internal volume and the supply of clean gas to the internal volume during the fourth time period following the third time period. Attached Figure Description

[0007] To gain a more detailed understanding of the features described above, a more specific description of the present disclosure can be obtained by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and should not be construed as limiting their scope, and other equally effective embodiments are permissible.

[0008] Figure 1 The illustration shows a side sectional view of an RTP chamber system according to one embodiment.

[0009] Figure 2 This is according to one embodiment for cleaning from Figure 1 A process flow diagram of the method for the internal structure of the RTP chamber.

[0010] Figure 3 According to another embodiment, it is used for cleaning from Figure 1 The process flow diagram of the internal method of the RTP chamber in the process.

[0011] To facilitate understanding, the same reference numerals are used to denote common elements in the figures where possible. Elements and features of one embodiment are contemplated to be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0012] Embodiments of this disclosure generally relate to a rapid thermal processing (RTP) system configured to perform an automated self-cleaning process on an RTP chamber included in the RTP system. The self-cleaning process provided in this disclosure includes cleaning the interior of the RTP chamber using plasma supplied from a remote plasma source, and generating plasma material (e.g., free radicals) by heating a gas in the interior volume of the RTP chamber to a high temperature (e.g., greater than 500°C). The plasma supplied from the remote plasma source and the plasma material generated by heating the gas supplied to the interior volume of the RTP chamber can remove deposits formed on the surfaces of components in the interior volume of the RTP chamber. Using the method disclosed herein, the interior of the RTP chamber can be cleaned without using conventional methods for cleaning the interior of the RTP chamber, which include disassembly of the RTP chamber and prolonged downtime. Furthermore, because the method disclosed herein allows maintaining a high level of cleanliness inside the RTP chamber, the quartz shield typically used in RTP chambers can be omitted. Having fewer components inside the RTP chamber allows the temperature of the substrate being processed to rise and fall more quickly, which increases throughput and enables additional processes that require faster temperature changes.

[0013] Figure 1 The figure shows a side sectional view of an RTP chamber system 200 according to one embodiment. The RTP chamber system 200 includes an RTP chamber 201, a gas source 260, a remote plasma source 270, an exhaust pump 280, and a controller 122.

[0014] In some embodiments, gas from gas source 260 may be supplied to remote plasma source 270 to generate plasma, which is then supplied to RTP chamber 201 to clean the interior of RTP chamber 201. In other embodiments, gas from gas source 260 may be supplied to RTP chamber 201 without passing through remote plasma source 270, and such gas may be heated by RTP chamber 201 to form plasma material (e.g., free radicals) to clean the interior of RTP chamber 201. The gas from gas source 260 may include cleaning gases (e.g., hydrogen and oxygen) and gases used to perform the purification (e.g., inert gases or nitrogen). Exhaust pump 280 may be used to vent gas from the interior of RTP chamber 201 and to control the pressure within the internal volume of RTP chamber 201.

[0015] RTP chamber 201 includes a chamber body 202. The chamber body 202 encloses an internal volume 218. The chamber body 202 includes a top 203, a bottom 204, and one or more sides 205 connecting the top 203 and the bottom 204. The RTP chamber 201 includes a transparent window 220 that can form part of the top 203 of the chamber body 202.

[0016] RTP chamber 201 includes an edge ring 214. During processing (e.g., annealing), a substrate (not shown) can be positioned on the edge ring 214 through a port (not shown) allowing access to the internal volume 218 of the RTP chamber 201. RTP chamber 201 further includes a rotatable cylinder 230 and a rotatable flange 232. The rotatable cylinder 230 is magnetically coupled to the rotatable flange 232. A rotor (not shown) causes the rotatable flange 232 to rotate about a central axis 234. The rotation of the flange 232 causes the rotatable cylinder 230 to rotate together with the substrate positioned on the edge ring 214 during processing.

[0017] RTP chamber 201 further includes a reflector 228 positioned below edge ring 214. Reflector 228 can be used to reflect radiation back toward a substrate (not shown) located on edge ring 214 during processing.

[0018] RTP chamber 201 further includes a heating device 224 located above chamber body 202. Heating device 224 may include a plurality of lamps 226. In some embodiments, the plurality of lamps 226 may be positioned in corresponding reflectors 227 arranged in a hexagonal close-packed array above transparent quartz window 220. In some embodiments, the lamps 226 are high-intensity halogen tungsten lamps. In some embodiments, heating device 224 includes hundreds or thousands of lamps 226. Heating device 224 may be configured to rapidly heat components in internal volume 218 to a temperature of 600°C to 1350°C at a rate greater than 100°C / s (e.g., greater than 300°C / s). In some embodiments, internal volume 218 may be less than 10,000 cm³. 3 Such as less than 5,000 cm 3 The relatively small internal volume helps allow the heating device 224 to heat the components within the internal volume at a rate greater than 100°C / second, such as greater than 300°C / second.

[0019] In some embodiments, heating device 224 may be configured to heat components, such as substrates, edge rings 214, or reflectors 228, to temperatures of 600°C to 1350°C at a rate greater than 100°C / second, such as greater than 300°C / second. This rapid heating rate allows the RTP chamber 201 to be cleaned with short heating and purging operations, some of which last between about one and about ten seconds, such as about five seconds, followed by purging of the RTP chamber 201. Purging the RTP chamber 201 after a short heating operation (e.g., five seconds) helps prevent redeposition of removed material by heating plasma material (e.g., free radicals) in the internal volume 218 of the RTP chamber 201. Furthermore, this rapid heating rate and high temperature (e.g., heating at a rate greater than 300°C / second to a temperature of 1350°C) allows vapor to be generated in the internal volume 218, for example, through contact with the heated edge ring 214, when hydrogen and oxygen are supplied to the internal volume 218 during the heating operation. The generated steam can help remove deposits formed on components in the internal volume 218. Additionally, in some embodiments, components configured to vent gas from the internal volume, such as exhaust ducts or exhaust flow paths in the RTP chamber 201, may be lined with quartz to prevent redeposition of material removed from the internal volume 218, thus preventing such material from re-entering the internal volume 218 of the RTP chamber.

[0020] During processing, reflector 228 reflects radiation emitted from a substrate (not shown) back toward the substrate. In some embodiments, reflector 228 may be supported on substrate 253. Substrate 253 may form part of the chamber bottom 204. In some embodiments, substrate 253 may be made of metal to dissipate excess radiation, especially during the cooling portion of the process. In some embodiments, cooling fluid (e.g., water) may circulate through substrate 253 during the process performed on the substrate. For the cleaning process described in this disclosure, cooling fluid may or may not circulate through substrate 253.

[0021] In some embodiments, the lamps 226 may be arranged in a ring pattern around the central axis 234. The control circuitry can be used to vary the voltage delivered to the lamps 226 in different areas to control the radial distribution of radiant energy during the process, thereby allowing the temperature at different locations on the substrate or other components (such as reflector 228) to be controlled during the process.

[0022] RTP chamber 201 may further include a plurality of pyrometers 240 and a plurality of light tubes 242. Each light tube 242 extends from one of the pyrometers 240 to a location below the edge ring 214. For example, each light tube 242 may extend to a different aperture in reflector 228. Each pyrometer 240 may receive radiation through its corresponding light tube 242 to monitor the temperature at different locations (e.g., different radial locations) on the substrate during processing.

[0023] RTP chamber 201 may further include a temperature sensor 222 to measure the temperature of reflector 228 during processes such as cleaning. In some embodiments, temperature sensor 222 may be a thermocouple. Although only one temperature sensor 222 is shown, two or more temperature sensors may be used in some embodiments. Furthermore, although temperature sensor 222 is positioned to measure the temperature of reflector 228, in some embodiments, one or more temperature sensors may be positioned to measure the temperature of other components, such as window 220, the inner wall of chamber body 202, or edge ring 214. In some embodiments, measurements from temperature sensor 222 may be used to determine when the cleaning process is complete. For example, a clean reflector 228 may reflect more radiation than a dirty reflector 228 because more radiation is reflected rather than absorbed by deposits adhering to reflector 228. Therefore, the cleaning process can be stopped when the lamp provides a relatively constant amount of heat to the internal volume 218 and the temperature of the reflector 228 drops by a specified amount (e.g., 0.25°C) or below a specified temperature (first temperature) indicating that the reflector 228 has reached an acceptable level of cleanliness.

[0024] RTP chamber 201 may further include a shroud 276 and a reflectivity sensor 275 for detecting the intensity of radiation reflected from reflector 228. The reflectivity sensor 275 is located within the shroud 276 such that it does not detect radiation emitted directly from lamp 226. In one embodiment, the reflectivity sensor 275 is located within a window 220 below a portion of one of the reflector tubes 227. In other embodiments, the reflectivity sensor 275 may be positioned in other locations, such as within an internal volume 218 below window 220.

[0025] The RTP chamber system 200 further includes a controller 122 for controlling the processes performed by the RTP chamber system 200. The controller 122 can be any type of controller used in an industrial environment, such as a programmable logic controller (PLC). The controller 122 includes a processor 127, memory 126, and input / output (I / O) circuitry 128. The controller 122 may further include one or more of the following components (not shown): such as one or more power supplies, a clock, communication components (e.g., a network interface card), and a user interface typically found in controllers in semiconductor facilities.

[0026] Memory 126 may include non-transitory memory. This non-transitory memory may be used to store the programs and settings described below. Memory 126 may include one or more readily available types of memory, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory, EEPROM), flash memory, floppy disk, hard disk, or random access memory (RAM) (e.g., non-volatile random access memory, NVRAM).

[0027] Processor 127 is configured to execute various programs stored in memory 126, such as those configured to execute the following reference. Figure 2 Method 2000 described and referenced below Figure 3 The described method 3000 and procedures for other cleaning processes and techniques performed on the substrate are described. During the execution of these procedures, the controller 122 can communicate with I / O devices (e.g., inputs such as sensors, and outputs such as actuators) via I / O circuitry 128. For example, during the execution of these procedures and communication via I / O circuitry 128, the controller 122 can control outputs, such as the power supplied to lamp 226 and the position of valves, to control the gas and / or plasma supplied to internal volume 218 and receive information from inputs (such as temperature sensor 222 and pyrometer 240). Memory 126 may further include various operational settings for controlling the RTP chamber system 200. For example, these settings may include temperature setpoints and durations for different portions of methods 2000 and 3000 described below.

[0028] Figure 2 This is according to one embodiment for cleaning from Figure 1The process flow diagram of the internal method of RTP chamber 201 in 2000.

[0029] The method begins at block 2002. At block 2002, plasma is supplied from a remote plasma source 270 to the internal volume 218 of the RTP chamber 201. One or more gases from a gas source 260 can be supplied to the remote plasma source 270 by opening one or more valves (not shown), and the remote plasma source 270 can generate plasma from the supplied gas. The plasma generated in the remote plasma source 270 then flows from the remote plasma source 270 to the internal volume 218 of the RTP chamber 201. The plasma supplied to the internal volume 218 can cause deposits on components in the internal volume 218 (such as reflector 228, edge ring 214, window 220, inner wall, etc.) to react (e.g., form volatile compounds) or otherwise be removed from the surface of the corresponding components (e.g., etched). The removed deposits can then be discharged from the internal volume 218 by an exhaust pump 280.

[0030] In one embodiment, hydrogen and oxygen are supplied to a remote plasma source 270, and the remote plasma source 270 is excited, for example, with RF power to generate plasma material containing hydrogen and oxygen, such as hydrogen radicals, oxygen radicals, and hydroxyl (OH) radicals. Hydrogen and oxygen are just two examples of gases that can be supplied to the remote plasma source 270, and in some embodiments other gases, including gases containing nitrogen, fluorides, or chlorine, can be supplied.

[0031] At frame 2004, heat is supplied from lamp 226 to the internal volume 218 of RTP chamber 201. Although Figure 2 The middle frame 2004 is illustrated after frame 2002, but in some embodiments, the heat supplied from lamp 226 may begin before or after plasma generation in frame 2002, or simultaneously with the execution of frame 2002. Controller 122 can be used to control the power supplied to lamp 226 during frame 2004. The heat supplied by lamp 226 can help remove deposits from surfaces in the internal volume 218. In some embodiments, the heat supplied by lamp 226 at frame 2004 can heat components (e.g., reflector 228) at a rate of at least 20°C / s or at least 50°C / s. Temperature sensor 222 can be used to monitor the temperature of reflector 228 during frame 2004. Controller 122 can use the temperature measurements from temperature sensor 222 to control the power supplied to lamp 226, enabling one or more temperature setpoints to be achieved.

[0032] In some embodiments, a relatively constant level of power (i.e., power fluctuations of no more than 1%) may be supplied to the lamp during frame 2004 or for most of the time of frame 2004, such that lamp 226 provides a relatively constant level of heat to internal volume 218 during frame 2004. In some embodiments, the power supplied to lamp 226 during frame 2004 may cycle between two or more levels, such as between high and low power levels, for example, where the high power level is at least 10% greater than the low power level. The varying power levels in these embodiments may result in fluctuations in the heat supplied to internal volume 218, which may help to release some of the deposits from the surfaces of components in internal volume 218.

[0033] Boxes 2002 and 2004 can be executed for a first time period, which can be from about two seconds to about thirty minutes, such as from about one minute to about ten minutes. In some embodiments, using a relatively short duration (e.g., less than ten seconds) for boxes 2002 and 3004 can help prevent redeposition of material removed from components in the internal volume 218 during boxes 2002 and 2004.

[0034] At frame 2006, the supply of plasma from remote plasma source 270 to internal volume 218 is stopped, and one or more purge gases are supplied to internal volume 218 of rapid thermal processing chamber 201 during a second time period. The second time period occurs after the first time period, during which plasma is supplied from remote plasma source 270 and heat is simultaneously supplied from lamp 226. This second time period can be from about ten seconds to about thirty minutes, such as from about one minute to about ten minutes. In some embodiments, the heat supplied by lamp 226 can continue during the purge of internal volume 218 performed at frame 2006. The one or more purge gases can be supplied from gas source 260 to internal volume 218 of RTP chamber 201 without passing through remote plasma source 270. The one or more purge gases may include oxygen, nitrogen, and / or one or more inert gases (e.g., argon). The purge gases can help remove deposits that have been released from the surfaces of components in internal volume 218, as well as volatile compounds formed by the interaction of deposits with the plasma supplied at frame 2002.

[0035] At box 2008, it is determined whether to repeat boxes 2002 to 2006 or complete method 2000. In some implementations, boxes 2002 to 2006 may be repeated a predetermined number of times (e.g., three times).

[0036] In other embodiments, feedback from one or more sensors can be used to determine whether to perform another cycle of blocks 2002 to 2006. For example, in one embodiment, a measurement from temperature sensor 222 can be used to determine whether to perform another cycle of blocks 2002 to 2006. For example, if, for a specified duration (e.g., 5 seconds) after (1) the temperature of reflector 228 increases to a set point (e.g., 500°C) and (2) the power supplied to lamp 226 does not decrease or the gas or plasma flow rate does not change, temperature sensor 222 detects a temperature drop on reflector 228 below a specified temperature (first temperature) or a significant temperature drop (e.g., at least 0.25°C or at least 1.00°C), it can be determined that the internal volume 218 is sufficiently clean to complete method 2000. The temperature drop measured by temperature sensor 222 can indicate that reflector 228 is cleaner and reflects more radiation from lamp 226, rather than deposits on reflector 228 absorbing radiation from lamp 226, which results in reflector 228 having a higher temperature.

[0037] In another embodiment, measurements from reflectivity sensor 275 can be used to determine whether to perform another cycle of blocks 2002 to 2006. For example, if reflectivity sensor 275 detects a radiation intensity higher than a first intensity for a specified duration (e.g., 5 seconds), it can be determined that the internal volume 218 is sufficiently clean to complete method 2000. The higher intensity of radiation can indicate that reflector 228 has achieved a sufficient level of cleanliness and is reflecting more radiation from lamp 226 to reflectivity sensor 275, rather than deposits on reflector 228 absorbing radiation from lamp 226.

[0038] In another embodiment, measurements from pyrometer 240 can be used to determine whether to perform another cycle of blocks 2002 to 2006. For example, historical data from measurements performed by pyrometer 240 can be used to identify pyrometer measurements indicating the need to clean internal volume 218. In one embodiment, a cleaning process, such as method 2000 or method 3000, is performed on an RTP chamber that is known to have been cleaned (e.g., a new chamber or an RTP chamber that has been otherwise confirmed to be clean). Then, when the same cleaning process is performed on an RTP chamber that needs to be cleaned, measurements taken by pyrometer 240 at different points (e.g., every second of heating operation) during the cleaning process (such as method 2000 or method 3000) performed on the already cleaned RTP chamber can be used as a target for identifying the need to clean the RTP chamber. After the pyrometer measurement target is achieved during the cleaning process (e.g., the measurement result is within a specified threshold, such as within 5% or 1%), the controller 122 may determine to terminate the corresponding cleaning process, for example at box 2008 in method 2000 or box 3008 in method 3000 described below.

[0039] Figure 3 According to another embodiment, it is used for cleaning from Figure 1 The process flow diagram of the method 3000 for the internal RTP chamber 201.

[0040] The method begins at block 3002. At block 3002, one or more cleaning gases are supplied from gas source 260 to the internal volume 218 of RTP chamber 201. One or more gases from gas source 260 can be supplied to the internal volume 218 of RTP chamber 201 by opening one or more valves (not shown). One or more cleaning gases can be supplied to the internal volume 218 of RTP chamber 201 without passing through remote plasma source 270. In one embodiment, the one or more cleaning gases supplied to the internal volume 218 during block 3002 may include hydrogen and oxygen. Hydrogen and oxygen are just two examples of cleaning gases that can be supplied to the internal volume 218, and in some embodiments other gases may be supplied, including vapors and gases containing nitrogen, fluorides, and / or chlorine, as well as mixtures of different gases (e.g., forming a gas comprising hydrogen and nitrogen).

[0041] At frame 3004, heat is supplied from lamp 226 to the internal volume 218 of RTP chamber 201. Although in Figure 3 The middle frame 3004 is illustrated after frame 3002, but in some embodiments, the heat supplied from lamp 226 may begin before or after frame 3002, or simultaneously with the execution of frame 3002. Controller 122 may be used to control the power supplied to lamp 226 during frame 3004. The heat supplied by lamp 226 may generate plasma material (e.g., free radicals), such as hydrogen radicals, oxygen radicals, and hydroxyl (OH) radicals, of one or more clean gases supplied to the internal volume 218. The generated plasma material may cause deposits on components (such as reflector 228, edge ring 214, window 220, inner wall, etc.) to react (e.g., form volatile compounds) or otherwise remove (e.g., etch away) from the surfaces of the corresponding components. The removed deposits may then be discharged from the internal volume by exhaust pump 280.

[0042] The heat provided by lamp 226 can also help remove deposits from surfaces within internal volume 218, for example, without the aid of plasma material. In some embodiments, the heat provided by lamp 226 at frame 3004 can heat components (e.g., reflector 228) at a rate of at least 20°C / s or at least 50°C / s. Temperature sensor 222 can be used to monitor the temperature of reflector 228 during frame 3004. Controller 122 can use the temperature measurements from temperature sensor 222 to control the power supplied to lamp 226, enabling one or more temperature setpoints to be achieved.

[0043] In some embodiments, a relatively constant level of power (i.e., power fluctuations of no more than 1%) may be supplied to the lamp during frame 3004 or for most of the time of frame 3004, such that lamp 226 provides a relatively constant level of heat to internal volume 218 during frame 3004. In other embodiments, the power supplied to lamp 226 during frame 3004 may cycle between two or more levels, such as between high and low power levels, for example, where the high power level is at least 10% greater than the low power level. The varying power levels in these embodiments may result in fluctuations in the heat supplied to internal volume 218, which may help to release some of the deposits from the surfaces of components within internal volume 218.

[0044] Boxes 3002 and 3004 can be executed for a first time period, which can be from about two seconds to about thirty minutes, such as from about one minute to about ten minutes. In some embodiments, using a relatively short duration (e.g., less than ten seconds) for boxes 3002 and 3004 can help prevent redeposition of material removed from components in the internal volume 218 during boxes 3002 and 3004.

[0045] At frame 3006, the supply of one or more gases from gas source 260 to internal volume 218 is stopped, and one or more purge gases are supplied to internal volume 218 of rapid thermal processing chamber 201 during a second time period. The second time period occurs after the first time period, during which plasma material (e.g., free radicals of hydrogen and oxygen) is generated from the heat provided by lamp 226. This second time period can be from about ten seconds to about thirty minutes, such as from about one minute to about ten minutes. In some embodiments, the heat provided by lamp 226 can continue during the purge of internal volume 218 performed at frame 3006. The one or more purge gases can be supplied from gas source 260 to internal volume 218 of RTP chamber 201 without passing through remote plasma source 270. The one or more purge gases may include oxygen, nitrogen, and / or one or more inert gases (e.g., argon). The purge gases can help remove deposits that have been released from the surfaces of components in internal volume 218, as well as volatile compounds formed by the interaction of deposits with plasma material generated at frame 3004.

[0046] At box 3008, it is determined whether to repeat boxes 3002 to 3006 or complete method 3000. In some implementations, boxes 3002 to 3006 may be repeated a predetermined number of times (e.g., three times).

[0047] In other embodiments, feedback from one or more sensors can be used to determine whether to execute another cycle of blocks 3002 to 3006. For example, feedback from temperature sensor 222, reflectivity sensor 275, and / or pyrometer 240 can be used during method 2000 in a similar manner to that described above to determine whether to execute another cycle of blocks 3002 to 3006.

[0048] In some implementations, method 2000 (see Figure 2 ) and Method 3000 (see Figure 3Methods 2000 and 3000 can be performed continuously to clean the internal volume 218 of the RTP chamber 201. For example, each method 2000, 3000 can preferentially clean a specific type of deposit or deposits on different surfaces within the internal volume 218 of the RTP chamber 201. Therefore, the overall level of cleanliness of the internal volume 218 of the RTP chamber 201 can be improved by performing both methods 2000 and 3000. In some embodiments, method 2000 can be performed before method 3000, and in other embodiments, method 3000 can be performed before method 2000. Furthermore, in some embodiments, each of methods 2000, 3000 can be repeated one or more times during the process of performing each of methods 2000, 3000. In one embodiment, portions of methods 2000, 3000 can be performed simultaneously. For example, in one embodiment, plasma can be supplied to the internal volume 218 from a remote plasma source 270 (see...). Figure 2 (frame 2002), and can contain one or more gases supplied to the internal volume 218 (see frame 2002). Figure 3 (frame 3002) and heat provided by lamp 226 (see frame ... Figure 3 (Box 3004) generates plasma matter (e.g., free radicals of hydrogen and oxygen).

[0049] Although the examples given above are specific to this disclosure, other and further examples of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

Claims

1. A method for cleaning a process chamber, the method comprising: a) During a first time period, plasma is supplied from a remote plasma source to the internal volume of a rapid heat treatment chamber, the rapid heat treatment chamber comprising a plurality of lamps configured to heat the internal volume of the rapid heat treatment chamber; and b) When the plasma from the remote plasma source is supplied to the internal volume of the rapid heat treatment chamber, heat is supplied from the plurality of lamps during the first time period to heat the internal volume of the rapid heat treatment chamber.

2. The method of claim 1, further comprising: c) During a second time period that occurs after the first time period, the supply of plasma from the remote plasma source to the internal volume is stopped, and during the second time period, purge gas is supplied to the internal volume of the rapid heat treatment chamber.

3. The method of claim 2, further comprising: Repeat steps a) through c) once or more.

4. The method of claim 2, further comprising providing heat from the lamp during the provision of the purifying gas to the internal volume.

5. The method of claim 1, further comprising: The temperature of the components in the internal volume is measured during the first time period, wherein the lamp provides a relatively constant level of heat to the internal volume during the first time period; as well as When the temperature of the component drops below a first temperature during the provision of the relatively constant level of heat, it is determined to stop the supply of plasma from the remote plasma source.

6. The method of claim 5, wherein measuring the temperature of the component comprises: Measure the temperature of the reflector.

7. The method of claim 1, wherein the reflector in the internal volume is heated to a temperature of at least 500°C.

8. The method of claim 1, further comprising: Measure the intensity of radiation reflected from the reflector in the internal volume; as well as When the intensity of the measured radiation increases to above a first intensity, it is determined to stop the supply of plasma from the remote plasma source.

9. The method of claim 1, wherein The power level supplied to the lamp cycles between a high power level and a low power level two or more times during the first time period, and The high power level is at least 10% greater than the low power level.

10. A method for cleaning a process chamber, the method comprising: a) During a first time period, one or more cleaning gases are supplied to the internal volume of a rapid heat treatment chamber, the rapid heat treatment chamber including a plurality of lamps configured to heat the internal volume of the rapid heat treatment chamber; b) During the first time period, heat is supplied from the plurality of lamps to heat the components in the internal volume to a first temperature to generate free radicals of the one or more cleaning gases in the internal volume, wherein the first temperature is at least 500°C; and c) During a second time period that occurs after the first time period, the supply of the one or more cleaning gases to the internal volume is stopped, and purified gas is supplied to the internal volume.

11. The method of claim 10, wherein the method further comprises repeating operations a) to c) one or more times.

12. The method of claim 10, further comprising: Heat is supplied from the lamp during the process of supplying the purified gas to the internal volume.

13. The method of claim 10, further comprising: The temperature of the components in the internal volume is measured during the first time period, wherein the lamp provides a relatively constant level of heat to the internal volume during the first time period; as well as When the temperature of the component drops below a first temperature during the provision of the relatively constant level of heat, it is determined to stop the supply of one or more cleaning gases.

14. The method of claim 13, wherein measuring the temperature of the component comprises: Measure the temperature of the reflector.

15. The method of claim 10, wherein the reflector in the internal volume is heated to a temperature of at least 500°C.

16. The method of claim 10, further comprising: Measure the intensity of radiation reflected from the reflector in the internal volume; as well as When the intensity of the measured radiation increases to above a first intensity, it is determined to stop the supply of one or more cleaning gases to the internal volume.

17. The method of claim 10, wherein The power level supplied to the lamp cycles between a high power level and a low power level two or more times during the first time period, and The high power level is at least 10% greater than the low power level.

18. A method for cleaning a process chamber, the method comprising: a) During a first time period, plasma is supplied from a remote plasma source to the internal volume of a rapid heat treatment chamber, the rapid heat treatment chamber comprising a plurality of lamps configured to heat the internal volume of the rapid heat treatment chamber; b) When the plasma from the remote plasma source is supplied to the internal volume of the rapid heat treatment chamber, heat is supplied from the plurality of lamps during the first time period to heat the internal volume of the rapid heat treatment chamber; c) Stop the supply of plasma from the remote plasma source to the internal volume during the second time period, and provide purge gas to the internal volume of the rapid heat treatment chamber during the second time period that occurs after the first time period; d) During the third time period, one or more cleaning gases are supplied to the internal volume of the rapid heat treatment chamber; e) During the third time period, heat is supplied from the plurality of lamps to heat the components in the internal volume to a second temperature to generate free radicals from the one or more cleaning gases, wherein the second temperature is at least 500°C; and f) During a fourth time period that occurs after the third time period, the supply of the one or more cleaning gases to the internal volume, and the supply of purified gas to the internal volume, shall be stopped.

19. The method of claim 18, the method further comprising repeating operations a) to c) one or more times.

20. The method of claim 18, the method further comprising repeating operations d) to f) one or more times.

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