Monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method

Abstract

The invention relates to monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and a cleaning method, the monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment comprises a base, a pre-cleaning tank, a chemical cleaning tank I, a chemical cleaning tank II, a rinsing tank and an air drying tank are concavely arranged on the base in sequence, and an air knife and a fan are arranged in the air drying tank. By using the formula of the cleaning solution, local etching formed on the surface by oxygen bubbles generated in the oxidation process is more uniform, especially in a micro-nano structure, bubbles are not prone to remaining, and cleaning is uniform.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of silicon wafer cleaning, and particularly relates to a single crystal silicon photovoltaic panel silicon wafer cleaning device and a cleaning method. BACKGROUND

[0002] The processing of a single crystal silicon wafer includes cutting, outer diameter rounding, slicing, chamfering, grinding, etching, cleaning and the like. In the slicing process and the like, the surface of the silicon wafer is inevitably contaminated by various contaminants, such as metal particles, organic matter, ionic impurities and the like. These impurities affect the surface performance and electrical performance of the silicon wafer, and further affect the conversion efficiency and stability of a photovoltaic cell. Therefore, an effective cleaning device is needed to remove the impurities and ensure the quality of the silicon wafer. In the production process, the surface contaminants of the silicon wafer are often in a complex state of mixture of various components such as organic matter, metal ions, particulate impurities and oxide layers. Different contaminants have large differences in response to cleaning conditions (such as temperature, pH value, cleaning time). Although intelligent matching of cleaning parameters can be achieved, it is still difficult to completely and accurately take into account the best removal conditions of all contaminants. The existing device needs full-time manual deep participation in the work of putting into and salvaging out of the cleaning tank, thereby resulting in low transportation and cleaning efficiency. Since the basket material needs to be corrosion-resistant, it is generally soft in texture, and a large amount of water is easily left over in the cleaning process, so that it is difficult for the mechanism for clamping the basket to control the clamping force. Therefore, the single crystal silicon photovoltaic panel silicon wafer cleaning device and the cleaning method are proposed. SUMMARY

[0003] This section is intended to summarize some aspects of the embodiments of the present application and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the abstract and title of the specification of the present application in order to avoid obscuring the purpose of this section, the abstract and the title, and such simplifications or omissions cannot be used to limit the scope of the present application.

[0004] In view of the following technical problems in the prior art: the existing device needs full-time manual deep participation in the work of putting into and salvaging out of the cleaning tank, thereby resulting in low transportation and cleaning efficiency, and the existing mechanism for clamping the basket is difficult to control the clamping force.

[0005] To solve the above technical problems, the present application provides the following technical solutions: a single crystal silicon photovoltaic panel silicon wafer cleaning device and a cleaning method, comprising a base, a pre-cleaning tank, a chemical cleaning tank one, a chemical cleaning tank two, a rinsing tank and a air-drying tank are sequentially recessed on the base, and a air knife and a fan are arranged in the air-drying tank.

[0006] Two slide rails are arranged on the base, a support frame is arranged between the base and the slide rails, the slide rails are connected with a clamping mechanism, and the bottom of the clamping mechanism clamps the basket.

[0007] As a kind of monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the slide rail has several isosceles trapezoidal rod connection, the slide rail part enters the pre-cleaning tank, chemical cleaning tank one, chemical cleaning tank two, rinsing tank and air-drying tank.

[0008] As a kind of monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the silicon wafer cleaning equipment uses multiple cleaning liquids, and the cleaning liquid is prepared:

[0009] According to the type of silicon wafer surface contaminants, select the corresponding cleaning liquid and strictly according to the proportion of preparation;

[0010] Alkaline cleaning liquid: for removing organic matter, particulate impurities and part of metal ions, according to the proportion of ammonia water: hydrogen peroxide: deionized water = 1:1:5 ~ 1:2:8;For example, 100L is prepared, first inject 60L deionized water into the preparation tank, start magnetic stirring, then add 10L 25% ammonia water, 10L 30% hydrogen peroxide, stir for 10 minutes until uniform, finally add 20L deionized water to the total volume of 100L, detect pH value, should be between 10.5 ~ 11.5;

[0011] Acidic cleaning liquid: for removing metal ions, according to the proportion of hydrochloric acid: hydrogen peroxide: deionized water = 1:1:5 ~ 1:2:8;

[0012] Hydrofluoric acid solution: for removing the surface oxide layer of silicon wafer, generally prepared into 1% ~ 5% dilute HF solution.

[0013] As a kind of monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the inner bottom wall of the pre-cleaning tank is provided with ultrasonic generator, the pre-cleaning tank is ultrasonic cleaning tank, and the chemical cleaning tank one and the chemical cleaning tank two are SC-1 liquid cleaning tank and SC-2 liquid cleaning tank respectively.

[0014] As a kind of monocrystalline silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the clamping mechanism includes hanging bracket, connecting frame, adjusting plate and self-locking mechanism, the bottom end of the hanging bracket is provided with adjusting plate, the adjusting plate is hinged with self-locking mechanism, the top end of the hanging bracket is provided with connecting frame, the top end of the connecting frame is rotatably connected with moving wheel, the moving wheel is hung on the upper side of the slide rail, and the two moving wheels are connected with driving motor.

[0015] As a kind of single crystal silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the self-locking mechanism includes clamping bottom plate, clamping plate, clamping table and arc channel, the bottom end of the adjusting plate is hinged with one end of the clamping table, the middle part of the clamping table is concave arc channel, the top end of the clamping plate is provided with connecting shaft, the bottom end of the clamping plate is provided with clamping bottom plate, the clamping bottom plate supports the bottom end of the basket, the connecting shaft extends into the arc channel, the adjusting plate is provided with four, one end of the clamping table is in contact with the top end of the basket;

[0016] The upper part of the clamping plate is provided with a clamping plate, which is inserted into the top part of the basket and in contact with the basket.

[0017] As a kind of single crystal silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the hanging frame is provided with a posture control assembly, the posture control assembly includes a driving wheel, an annular groove, a control ring, a connecting arm and a connecting cross plate, the inner ring of the hanging frame is concave annular groove, the control ring is rotatably connected in the annular groove, the connecting cross plate is connected to the control ring through the connecting arm, and the connecting cross plate is provided with an adjusting plate.

[0018] As a kind of single crystal silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method preferred technical scheme, the cleaning method includes pre-cleaning, chemical cleaning and rinsing.

[0019] ①Pre-cleaning: immerse the basket loaded with silicon wafers into the ultrasonic cleaning tank, and inject deionized water or dilute alkaline cleaning solution into the tank.

[0020] The ultrasonic generator is started to generate ultrasonic waves or megasonic waves, and the particles on the surface of the silicon wafer are shaken off by using the cavitation effect of the sound waves. The cleaning time is 5-10 minutes, and the temperature is controlled at 40-60℃.

[0021] During the cleaning process, the cleaning effect can be monitored in real time by a particle counter. If the particle count does not meet the standard, the cleaning time is automatically increased or high-pressure spraying is started to assist in rinsing. The pressure of the high-pressure nozzle is 0.5-2 MPa, which can rinse the surface of the silicon wafer of larger particles. The water pressure and flow rate of the spray head can be adjusted to adapt to silicon wafers with different degrees of contamination.

[0022] ②Chemical cleaning: organic matter removal: transfer the silicon wafer into the SC-1 liquid cleaning tank, start the circulating pump in the tank, make the liquid overflow the silicon wafer by 2 cm, keep the temperature at 70-80℃, and soak for 5-15 minutes. During the cleaning process, the alkaline environment of ammonia water causes slight corrosion on the surface of the silicon wafer, hydrogen peroxide oxidizes and decomposes organic matter, and ammonia water reacts with particle impurities to form water-soluble compounds, achieving particle peeling.

[0023] Oxide layer removal: if there is an oxide layer on the surface of the silicon wafer, immerse it in dilute HF solution, soak for 1-3 minutes, remove the surface SiO2, and expose the fresh silicon surface. It is necessary to strictly control the concentration of HF and the soaking time to avoid excessive corrosion of the silicon wafer.

[0024] Metal ion removal: the silicon wafer is transferred into the SC-2 liquid cleaning tank, the temperature is 60-70 DEG C, and soaking for 5-10 minutes. Hydrochloric acid provides an acidic environment, so that metal ions form complex and dissolve, hydrogen peroxide inhibits the silicon wafer surface excessive corrosion. During soaking, every 2 minutes, the flower basket is turned over 180 DEG by mechanical arm, to ensure uniform cleaning.

[0025] ③Rinse: a large amount of deionized water is used in the rinsing area to thoroughly flush the silicon wafer, and remove the cleaning agent and impurities remaining on the surface of the silicon wafer. The rinsing area is also provided with multiple spray heads, and the reverse flow rinsing mode is adopted to improve the rinsing efficiency and effect. A water level sensor is arranged at the end of the rinsing area, and the water level of the rinsing water is monitored in real time. When the water level is lower than the set value, deionized water is automatically supplemented.

[0026] The single crystal silicon photovoltaic panel silicon wafer cleaning equipment and the cleaning method have the beneficial effects that: through the use of the cleaning liquid formula, the oxygen bubbles generated in the oxidation process are more uniform in local etching on the surface, especially in the micro-nano structure, so that the bubbles are not easily left, and the cleaning is uniform.

[0027] The micro-nano structure includes a deep trench.

[0028] Through the use of the self-locking mechanism, the heavier the weight of the flower basket, the greater the force of the clamping table on the bottom of the flower basket under the action of gravity, and the greater the friction between the clamping table and the flower basket, thereby enabling the self-locking mechanism to have the ability of self-feedback regulation. The more silicon wafers loaded on the flower basket, the more water liquid contaminated, the heavier the weight of the flower basket, and the greater the clamping force of the self-locking mechanism on the flower basket, so that the flower basket is less likely to fall off.

[0029] Through the use of the clamping mechanism, the driving thing on the clamping mechanism drives the clamping mechanism to shuttle between the pre-cleaning tank, the chemical cleaning tank one, the chemical cleaning tank two, the rinsing tank and the air drying tank during the entire cleaning process. The clamping mechanism clamps the flower basket at all times during the entire process, thereby reducing the time spent in clamping and releasing the flower basket, and thereby greatly improving the cleaning efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative labor. Among them:

[0031] Figure 1 It is a schematic diagram of the overall structure of the present application;

[0032] Figure 2 It is a schematic diagram of the connection relationship between the sliding rail and the moving wheel of the present application Figure 1;

[0033] Figure 3 The connecting relationship structure diagram of the sliding rail and the moving wheel of the application Figure 2 ;

[0034] Figure 4 The top view structure diagram of the hanging rack of the application.

[0035] Reference signs: 1, base; 2, pre-cleaning tank; 3, chemical cleaning tank one; 4, chemical cleaning tank two; 5, rinsing tank; 6, air drying tank; 7, support frame; 8, sliding rail; 9, hanging rack; 10, moving wheel; 11, connecting frame; 12, driving wheel; 13, adjusting plate; 14, arc-shaped channel; 15, clamping plate; 16, clamping table; 17, connecting shaft; 18, flower basket; 19, clamping bottom plate; 20, annular groove; 21, control ring; 22, connecting arm; 23, connecting cross plate; 24, ultrasonic generator. DETAILED DESCRIPTION

[0036] In order to make the above objectives, features and advantages of the present application more apparent, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0037] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may, however, be practiced in a variety of ways beyond the specific embodiments described herein without departing from the scope of the present application. It can be appreciated that implementations of the present application can be used in a variety of different electromagnetic environments and applications, and that the scope of the present application is not limited to the examples described herein.

[0038] Secondly, the "one embodiment" or "embodiment" referred to herein can include specific features, structures or characteristics in at least one implementation of the present application. "In one embodiment" appearing in different places in the specification does not mean the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments.

[0039] Thirdly, the present application is described in detail in conjunction with the schematic diagram. In the detailed description of the embodiments of the present application, the cross-sectional view of the device structure is partially enlarged without the general proportion for the convenience of description, and the schematic diagram is only an example, which should not limit the scope of protection of the present application herein. In addition, the three-dimensional spatial dimensions of length, width and depth should be included in actual manufacture.

[0040] As Figures 1-4 shown, the present application proposes a single crystal silicon photovoltaic panel silicon wafer cleaning equipment and cleaning method, including base 1, the base 1 is sequentially recessed with pre-cleaning tank 2, chemical cleaning tank one 3, chemical cleaning tank two 4, rinsing tank 5 and air drying tank 6, the air drying tank 6 is provided with air knife and fan;

[0041] The base 1 is provided with two slide rails 8, and a support frame 7 is arranged between the base 1 and the slide rails 8, the slide rails 8 are connected with a clamping mechanism, and the bottom of the clamping mechanism clamps a flower basket 18.

[0042] The slide rails 8 are connected by a plurality of isosceles trapezoidal rods, and the slide rails 8 partially extend into the pre-cleaning tank 2, the chemical cleaning tank 1 3, the chemical cleaning tank 2 4, the rinsing tank 5 and the air drying tank 6.

[0043] The silicon wafer cleaning equipment uses a plurality of cleaning solutions, and the cleaning solutions are prepared as follows:

[0044] According to the type of the surface contaminants of the silicon wafer, the corresponding cleaning solution is selected and prepared according to the proportion;

[0045] The percentages are mass fractions.

[0046] The alkaline cleaning solution (SC-1) is used for removing organic matters, particulate impurities and part of metal ions, and is prepared according to the proportion of ammonia water (NH3·H2O): hydrogen peroxide (H2O2): deionized water = 1:1:5-1:2:8; for example, 100L is prepared, 60L of deionized water is first injected into a preparation tank, magnetic stirring is started, then 10L of 25% ammonia water and 10L of 30% hydrogen peroxide are sequentially added, stirring is performed for 10 minutes until uniform, finally 20L of deionized water is added to a total volume of 100L, and the pH value is detected, which should be between 10.5-11.5;

[0047] The acidic cleaning solution (SC-2) is used for removing metal ions, and is prepared according to the proportion of hydrochloric acid (HCl): hydrogen peroxide (H2O2): deionized water = 1:1:5-1:2:8;

[0048] The hydrogen fluoride (HF) solution is used for removing the surface oxide layer of the silicon wafer, and is generally prepared into a dilute HF solution of 1%-5%.

[0049] The inner bottom wall of the pre-cleaning tank 2 is provided with an ultrasonic generator 24, the pre-cleaning tank 2 is an ultrasonic cleaning tank, and the chemical cleaning tank 1 3 and the chemical cleaning tank 2 4 are SC-1 liquid cleaning tanks and SC-2 liquid cleaning tanks respectively.

[0050] The clamping mechanism comprises a hanging frame 9, a connecting frame 11, an adjusting plate 13 and a self-locking mechanism, the bottom end of the hanging frame 9 is provided with the adjusting plate 13, the adjusting plate 13 is hinged with the self-locking mechanism, the top end of the hanging frame 9 is provided with the connecting frame 11, the top end of the connecting frame 11 is rotatably connected with a moving wheel 10, the moving wheel 10 is hung on the upper side of the slide rail 8, and the two moving wheels 10 are connected with a driving motor.

[0051] The driving motor drives the moving wheel 10 to rotate, so that the moving wheel 10 drives the clamping mechanism to move along the slide rail 8 into or out of the pre-cleaning tank 2, the chemical cleaning tank 1 3, the chemical cleaning tank 2 4, the rinsing tank 5 and the air-drying tank 6.

[0052] The self-locking mechanism comprises a clamping bottom plate 19, a clamping plate 15, a clamping table 16 and an arc-shaped channel 14, the bottom end of the adjusting plate 13 is hinged to one end of the clamping table 16, the middle part of the clamping table 16 is concave to form the arc-shaped channel 14, the top end of the clamping plate 15 is provided with a connecting shaft 17, the bottom end of the clamping plate 15 is provided with the clamping bottom plate 19, the clamping bottom plate 19 supports the bottom end of the flower basket 18, the connecting shaft 17 extends into the arc-shaped channel 14, and the clamping table 16 is provided with four adjusting plates 13.

[0053] The upper part of the clamping plate 15 is provided with a clamping plate which is inserted into the top part of the flower basket 18 and abuts against the flower basket 18.

[0054] The hanging frame 9 is provided with a posture control assembly, the posture control assembly comprises a driving wheel 12, an annular groove 20, a control ring 21, a connecting arm 22 and a connecting transverse plate 23, the inner ring of the hanging frame 9 is concave to form the annular groove 20, the control ring 21 is rotatably connected in the annular groove 20, the connecting transverse plate 23 is connected to the control ring 21 through the connecting arm 22, the connecting transverse plate 23 is provided with the adjusting plate 13, the driving wheel 12 is rotatably connected in the hanging frame 9, the driving wheel 12 is provided with a connecting tooth, the connecting tooth of the driving wheel 12 is engaged with the control ring 21, and the driving wheel 12 is connected to the power output end of the servo motor.

[0055] The servo motor can drive the control ring 21 to rotate, the control ring 21 drives the hanging frame 9, the adjusting plate 13 and the self-locking mechanism to rotate, the clamping bottom plate 19 of the self-locking mechanism extends into the bottom end of the flower basket 18, the clamping plate is inserted into the top part of the flower basket 18 and abuts against the flower basket 18, the flower basket 18 is loaded with silicon wafers, the four clamping plates 15 are distributed around the flower basket 18, the flower basket 18 is hung on the bottom plate 19, the weight of the flower basket 18 pulls the clamping table 16 through the connecting shaft 17 on the clamping plate 15, the clamping table 16 swings and presses one end of the clamping table 16 on the top of the flower basket 18, friction is generated between the clamping table 16 and the flower basket 18, so that the self-locking mechanism locks the flower basket 18.

[0056] The cleaning method comprises pre-cleaning, chemical cleaning and rinsing.

[0057] ①Pre-cleaning: the flower basket loaded with silicon wafers is immersed in an ultrasonic cleaning tank, and deionized water or dilute alkaline cleaning solution is injected into the tank.

[0058] The ultrasonic generator 24 opens ultrasonic waves (frequency 20-40 kHz) or megasonic waves (frequency >800 kHz) and starts the bubbling device at the bottom of the tank (air flow 20 L / min) to shake off the particles on the wafer surface by the cavitation effect of the sound waves. The cleaning time is 5-10 minutes and the temperature is controlled at 40-60°C.

[0059] During the cleaning process, the cleaning effect can be monitored in real time by a particle counter. If the particle count does not meet the standard, the cleaning time is automatically increased or a high-pressure spray is started to assist in rinsing. The pressure of the high-pressure nozzle is 0.5-2 MPa to rinse the wafer surface of larger particles. The water pressure and flow of the spray head can be adjusted to adapt to wafers with different degrees of contamination.

[0060] Chemical cleaning: organic matter removal (SC-1 cleaning): the wafer is transferred into the SC-1 liquid cleaning tank, the circulation pump in the tank is started (flow 80 L / min), the liquid is 2 cm higher than the wafer, the temperature is maintained at 70-80°C, and the wafer is soaked for 5-15 minutes.

[0061] During the cleaning process, the alkaline environment of the ammonia water causes slight corrosion of the wafer surface, the hydrogen peroxide oxidizes and decomposes the organic matter, and the ammonia water reacts with the particle impurities to form water-soluble compounds, achieving particle peeling.

[0062] Oxide layer removal (HF cleaning): if the wafer surface has an oxide layer, it is immersed in a dilute HF solution (1%-5%) for 1-3 minutes to remove the surface SiO2 and expose the fresh silicon surface. The concentration of HF and the soaking time need to be strictly controlled to avoid excessive corrosion of the wafer.

[0063] Metal ion removal (SC-2 cleaning): the wafer is transferred into the SC-2 liquid cleaning tank, the temperature is 60-70°C, and the wafer is soaked for 5-10 minutes. The hydrochloric acid provides an acidic environment to dissolve the metal ion complex, and the hydrogen peroxide inhibits the excessive corrosion of the wafer surface. During soaking, the flower basket is turned over 180° by the mechanical arm every 2 minutes to ensure uniform cleaning.

[0064] Rinsing: a large amount of deionized water is used in the rinsing area to thoroughly rinse the wafer and remove the remaining cleaning agent and impurities on the wafer surface. The rinsing area is also provided with multiple spray heads, which use a countercurrent rinsing method to improve the rinsing efficiency and effect. A water level sensor is installed at the end of the rinsing area to monitor the water level of the rinsing water in real time. When the water level is lower than the set value, deionized water is automatically supplemented.

[0065] Air drying step:

[0066] After cleaning, the drying assembly composed of air knives and air fans in the drying tank 6. The air knives are installed above and on both sides of the drying tank 6, arranged at a certain angle, which can blow the high-speed airflow uniformly to the surface of the silicon wafer. The air fan provides strong wind, and the airflow blown by the air knife can quickly dry the moisture on the surface of the silicon wafer, avoiding the residual moisture from causing water stains or secondary pollution on the surface of the silicon wafer. The airflow temperature of the air knife can be adjusted by the heating device, which can ensure good drying effect in cold environment.

[0067] It is understood that, in the development of any actual implementation, numerous implementation-specific decisions can be made. Such development efforts, while possibly complex and time-consuming, would nevertheless be routine undertaking for those of ordinary skill in the art having the benefit of this disclosure, without undue experimentation.

[0068] It should be noted that the above examples are only used to illustrate the technical solutions of the present application but not limit the present application. Although the present application has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present application can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application, and they should be covered in the scope of the claims of the present application.

Claims

1. A cleaning device and method for monocrystalline silicon photovoltaic panel wafers, characterized in that: Includes a base (1), on which a pre-cleaning tank (2), a chemical cleaning tank one (3), a chemical cleaning tank two (4), a rinsing tank (5) and an air drying tank (6) are sequentially recessed; Two slide rails (8) are provided on the base (1), and a support frame (7) is provided between the base (1) and the slide rails (8). The slide rails (8) are connected to a clamping mechanism, and the bottom of the clamping mechanism clamps a flower basket (18).

2. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 1, characterized in that: The slide rail (8) is composed of several isosceles trapezoidal rods connected together, and part of the slide rail (8) extends into the pre-cleaning tank (2), chemical cleaning tank one (3), chemical cleaning tank two (4), rinsing tank (5) and air drying tank (6).

3. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 1, characterized in that: The silicon wafer cleaning equipment uses a variety of cleaning solutions: Select the appropriate cleaning solution based on the type of contaminants on the silicon wafer surface and prepare it strictly according to the mixing ratio; Alkaline cleaning solution: used to remove organic matter, particulate impurities, and some metal ions. It is prepared according to the ratio of ammonia water: hydrogen peroxide: deionized water = 1:1:5 to 1:2:

8. Taking the preparation of 100L as an example, first pour 60L of deionized water into the preparation tank, turn on the magnetic stirrer, then add 10L of 25% ammonia water and 10L of 30% hydrogen peroxide in sequence, stir for 10 minutes until uniform, and finally add 20L of deionized water to the total volume of 100L. The pH value should be between 10.5 and 11.

5. Acidic cleaning solution: used to remove metal ions, prepared in the ratio of hydrochloric acid: hydrogen peroxide: deionized water = 1:1:5 to 1:2:8; Hydrofluoric acid solution: used to remove the oxide layer on the surface of silicon wafers, and is generally prepared as a 1% to 5% dilute HF solution.

4. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 3, characterized in that: The inner bottom wall of the pre-cleaning tank (2) is provided with an ultrasonic generator (24). The pre-cleaning tank (2) is an ultrasonic cleaning tank. The chemical cleaning tank one (3) and chemical cleaning tank two (4) are respectively SC-1 liquid cleaning tank and SC-2 liquid cleaning tank.

5. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 1, characterized in that: The clamping mechanism includes a mounting bracket (9), a connecting bracket (11), an adjusting plate (13), and a self-locking mechanism. The bottom end of the mounting bracket (9) is provided with an adjusting plate (13), which is hinged to the self-locking mechanism. The top end of the mounting bracket (9) is provided with a connecting bracket (11), and the top end of the connecting bracket (11) is rotatably connected with a moving wheel (10). The moving wheel (10) is hung on the upper side of the slide rail (8), and two of the moving wheels (10) are connected to a drive motor.

6. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 5, characterized in that: The self-locking mechanism includes a clamping base plate (19), a clamping plate (15), a clamping platform (16), and an arc-shaped groove (14). The bottom end of the adjusting plate (13) is hinged to one end of the clamping platform (16). The clamping platform (16) has an arc-shaped groove (14) recessed in the middle. The top end of the clamping plate (15) is provided with a connecting shaft (17). The bottom end of the clamping plate (15) is provided with a clamping base plate (19). The clamping base plate (19) supports the bottom end of the flower basket (18). The connecting shaft (17) extends into the arc-shaped groove (14). There are four adjusting plates (13). One end of the clamping platform (16) abuts against the top end of the flower basket (18). The upper part of the clamping plate (15) is provided with a clamping plate, which is inserted into the top part of the flower basket (18) and abuts against the flower basket (18).

7. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 6, characterized in that: The mounting bracket (9) is equipped with an attitude control component, which includes a drive wheel (12), an annular groove (20), a control ring (21), a connecting arm (22), and a connecting plate (23). The inner ring of the mounting bracket (9) is recessed with an annular groove (20). The control ring (21) is rotatably connected in the annular groove (20). The connecting plate (23) is connected to the control ring (21) via the connecting arm (22). An adjustment plate (13) is provided on the connecting plate (23). The drive wheel (12) is rotatably connected in the mounting bracket (9). The drive wheel (12) is provided with connecting teeth. The connecting teeth of the drive wheel (12) mesh with the control ring (21). The drive wheel (12) is connected to a servo motor.

8. The cleaning equipment and method for monocrystalline silicon photovoltaic panels according to claim 1, characterized in that: Cleaning methods include pre-cleaning, chemical cleaning, and rinsing; ① Pre-cleaning: Immerse the basket containing the silicon wafers into the ultrasonic cleaning tank, and inject deionized water or dilute alkaline cleaning solution into the tank. The ultrasonic generator (24) turns on the ultrasonic wave and uses the cavitation effect of the sound wave to shake off the particulate impurities on the surface of the silicon wafer. The cleaning time is 5 to 10 minutes and the temperature is controlled at 40 to 60°C. During the cleaning process, the cleaning effect can be monitored in real time by a particle counter. If the particle count does not meet the standard, the cleaning time will be automatically increased or a high-pressure spray will be started to assist in rinsing. The pressure of the high-pressure nozzle is 0.5 to 2 MPa to rinse larger particles on the silicon wafer surface. The spray pressure and flow rate of the spray head can be adjusted to adapt to silicon wafers with different levels of contamination. ② Chemical cleaning: Organic matter removal: Transfer the silicon wafer into the SC-1 liquid cleaning tank, start the tank circulation pump, make the liquid cover the silicon wafer by 2cm, maintain the temperature at 70~80℃, and soak for 5~15 minutes; During the cleaning process, the alkaline environment of ammonia water causes slight corrosion on the surface of the silicon wafer, hydrogen peroxide oxidizes and decomposes organic matter, and at the same time, ammonia water reacts with particulate impurities to generate water-soluble compounds, thus achieving particle peeling; Oxide layer removal: If an oxide layer exists on the surface of the silicon wafer, immerse it in a dilute HF solution for 1-3 minutes to remove the surface SiO2 and expose the fresh silicon surface; the HF concentration and immersion time must be strictly controlled to avoid excessive corrosion of the silicon wafer; Metal ion removal: Transfer the silicon wafer into the SC-2 liquid cleaning tank at a temperature of 60-70℃ and soak for 5-10 minutes; hydrochloric acid provides an acidic environment to dissolve metal ions by forming complexes, and hydrogen peroxide inhibits excessive corrosion of the silicon wafer surface; during soaking, the basket is rotated 180° every 2 minutes by a robotic arm to ensure uniform cleaning. ③ Rinsing: The rinsing zone uses a large amount of deionized water to thoroughly rinse the silicon wafers, removing residual cleaning agents and impurities from the surface of the silicon wafers; the rinsing zone is also equipped with multiple spray heads, using a counter-current rinsing method to improve rinsing efficiency and effect; a water level sensor is installed at the end of the rinsing zone to monitor the water level of the rinsing water in real time, and automatically replenishes deionized water when the water level is lower than the set value.

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