Post-treatment method for silicon carbide shunting disc

Abstract

The invention belongs to the technical field of semiconductor processing. The invention provides a post-treatment method for a silicon carbide shunting disc, which comprises the following steps: S1, degreasing and cleaning: cleaning the surface of the silicon carbide shunting disc by using a surfactant solution at the temperature of 90-100 DEG C, and soaking for 60-120 minutes; s2, dry sand blasting; s3, carrying out wet sand blasting; s4, carrying out first ultrasonic cleaning; s5, LAP grinding is carried out; s6, second ultrasonic cleaning; s7, soaking in an organic solvent and wiping; s8, soaking in a first acid solution; s9, soaking in an alkaline solution; s10, soaking in a second acid solution; and S11, soaking in a strong acid solution. According to the post-treatment method for the silicon carbide shunting disc, dry-process and wet-process sand blasting, ultrasonic cleaning, acid-base alternate treatment, ultrapure water gradient rinsing and the like are carried out, so that pollutant metal ions of silicon carbide shunting are reduced, and the extreme cleanliness requirement of semiconductor equipment on the silicon carbide shunting disc is met; and the silicon carbide shunting disc can still keep clean for a long time in an extreme environment, so that the service life of the silicon carbide shunting disc is prolonged.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor processing, and particularly relates to a silicon carbide shunt disc post-processing method. BACKGROUND

[0002] In the field of semiconductor manufacturing, with the continuous improvement of chip integration and the continuous reduction of feature size, the precision, uniformity and selectivity of etching process are put forward strict requirements. Traditional wet etching is difficult to meet the demand of ultra-fine processing due to many limitations, and dry etching technology emerges as the times require and becomes the mainstream. The plasma shunt disc, as the core component of the semiconductor dry etching equipment, is indispensable. It can precisely control the plasma distribution, ensure that the plasma at each part of the wafer surface acts uniformly and stably during the etching process, thereby significantly improving the etching precision and consistency, effectively reducing the etching deviation, and realizing the mass production of higher performance and smaller size chips.

[0003] In today's dry etching process, there are many materials to choose from for the shunt disc, such as silicon, quartz, silicon carbide, graphite, aluminum, etc. Among them, silicon carbide material has significant advantages in high temperature resistance, chemical inertness and mechanical strength. However, in the prior art, the silicon carbide shunt disc has the following problems in the processing process: Traditional cleaning processes such as single acid washing or ultrasonic cleaning are difficult to completely remove metal impurity ions, which can diffuse to the wafer surface at high temperatures, causing device failure; submicron particles generated during the processing of the shunt disc are easily adsorbed on the surface of the parts, which cannot be removed by conventional cleaning, causing wafer scratches or pattern defects; the silicon carbide material itself has high hardness and brittleness, and traditional processing is easy to introduce microcracks, which are easy to adsorb particles and gold impurities and other pollutants, and these pollutants will be brought to the cavity and wafer surface during the process, causing pollution, in addition, the inner wall of the micro-pore of the shunt disc is easy to appear edge collapse during processing, affecting the gas flowability.

[0004] Therefore, it is a technical problem to be solved by the present application to provide a silicon carbide shunt disc post-processing method with ultra-clean and low damage. SUMMARY

[0005] The present application aims to solve the problems of the prior art and provides a silicon carbide shunt disc post-processing method. The silicon carbide shunt disc post-processing method provided by the present application performs dry and wet sandblasting, ultrasonic cleaning, acid and alkali alternating treatment, gradient hot water bath, etc., so that the surface metal residue of the silicon carbide shunt disc is less than 16x10 atoms / cm 2 , meeting the extreme clean requirement of the silicon carbide shunt disc for semiconductor equipment.

[0006] To solve the above problems, the present application provides the following technical solutions: A silicon carbide shunt disc post-processing method, comprising the following steps: S1. Lipid removal cleaning: using a surfactant solution to clean the surface of the silicon carbide shunt disc, temperature 90-100℃, soaking for 60-120min; S2. Dry sand blasting; S3. Wet sand blasting; S4. First ultrasonic cleaning: medium is pure water with a resistivity of 16-18MΩ·cm, ultrasonic frequency 40-50Hz, ultrasonic intensity 10-20W / in 2 , temperature 60-80℃, cleaning time 30-60min; S5. LAP grinding: using a double-sided grinder, the grinding medium is diamond grinding liquid with a particle size of 5-30μm; S6. Second ultrasonic cleaning: medium is pure water with a resistivity of 16-18MΩ·cm, ultrasonic frequency 40-50Hz, ultrasonic intensity 10-20W / in 2 , temperature 60-80℃, cleaning time 30-60min; S7. Organic solvent soaking and wiping: first soaking in an organic solvent, setting the temperature to 30-50℃, soaking for 30-60min, then using a dust-free cloth to wipe the product surface with the organic solvent, until the cloth is not dirty after wiping; S8. First acid solution soaking: placing the silicon carbide shunt disc after organic solvent wiping in step S7 into a first acid mixed solution, the first acid mixed solution is a mixed solution of H2SO4, H2O2 and deionized water (hereinafter referred to as "DIW"), temperature 50-70℃, soaking time 30-60min; S9. Alkaline solution soaking: placing the silicon carbide shunt disc after first acid solution soaking in step S8 into deionized water for 3-5min, then placing the silicon carbide shunt disc into an alkaline mixed solution, the alkaline mixed solution is a mixed solution of NH4OH, H2O2 and deionized water, temperature 50-70℃, using a pressurized cleaning device to fully flush the holes, time 30-60min; S10. Second acid solution soaking: placing the silicon carbide shunt disc after alkaline solution soaking in step S9 into deionized water for 3-5min, then placing the silicon carbide shunt disc into a second acid mixed solution, the second acid mixed solution is a mixed solution of HCl, H2O2 and deionized water, temperature 50-70℃, soaking time 30-60min; S11. Strong acid solution soaking: after the second acid solution soaking of step S10, the silicon carbide flow plate is put into deionized water for 3-5 min, and then the silicon carbide flow plate is soaked in a strong acid mixed solution, which is a mixed solution of HF, HNO3 and HOAc, at a temperature of 20-30℃ for 3-5 min.

[0007] The silicon carbide flow plate post-processing method as described above further comprises the following steps: S12. First hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 80-100℃, and the soaking time is 30-60 min; S13. Second hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 60-80℃, and the soaking time is 30-60 min; S14. Third hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 40-60℃, and the soaking time is 30-60 min; S15. Drying and packaging: after drying with a nitrogen gun in a Class 100 environment, it is placed in a clean oven at a temperature of 100-200℃ for 60-150 min.

[0008] The silicon carbide flow plate post-processing method as described above, in step S2, the specific steps of dry sand blasting are as follows: a micro nozzle with a diameter of 0.5-2 mm is used to perform regional dry sand blasting treatment on the subsurface broken layer of the inner wall of the small hole of the silicon carbide flow plate, a silicon carbide abrasive with a particle size of 5-50 μm is selected, the abrasive flow rate is 50-150 g / min, the air pressure is 0.2-0.7 MPa, the incident angle is 70°-80°, the nozzle distance is 50-100 mm, and high-pressure nitrogen blowing is used after dry sand blasting.

[0009] The silicon carbide flow plate post-processing method as described above, in step S3, the specific steps of wet sand blasting are as follows: a micro nozzle with a diameter of 1.5-3 mm is used to perform wet sand blasting treatment on the broken layer of the surface of the silicon carbide flow plate, ceramic abrasive is selected, the volume ratio of the ceramic abrasive to deionized water is (1:5)-(1:10), the abrasive flow rate is 0.5-8 kg / min, the air pressure is 0.1-0.3 MPa, the incident angle is 60°-75°, and the nozzle distance is 30-80 mm.

[0010] The silicon carbide flow plate post-processing method as described above, in step S5, the specific parameters of LAP grinding are as follows: the pressure is set to 4000-6000 N, the upper disc rotation speed is 20-30 rpm, the lower disc rotation speed is 50-60 rpm, the carrier rotation speed is 20-30 rpm, and the grinding time is 10-60 min.

[0011] The silicon carbide shunt disc post-processing method as described above, in the step S7, the organic solvent is any one of isopropyl alcohol, acetone, ethanol, N-methyl pyrrolidone.

[0012] The silicon carbide shunt disc post-processing method as described above, in the step S8, the volume ratio of the H2SO4, H2O2 and deionized water is 1: (3-5): (5-10).

[0013] The silicon carbide shunt disc post-processing method as described above, in the step S9, the volume ratio of the NH4OH, H2O2 and deionized water is 1: (3-5): (5-10).

[0014] The silicon carbide shunt disc post-processing method as described above, in the step S10, the volume ratio of the HCl, H2O2 and deionized water is 1: (3-5): (5-10).

[0015] The silicon carbide shunt disc post-processing method as described above, in the step S11, the volume ratio of the HF, HNO3 and HOAc is 1: (5-10): (5-10).

[0016] Compared with the prior art, the present application has the following effects and advantages: 1. The silicon carbide shunt disc post-processing method provided by the present application carries out dry sand blasting, ultrasonic cleaning, acid-alkali alternating treatment, ultrapure water gradient rinsing, etc., so that the surface metal ions of the silicon carbide shunt disc are between 12.0-15.6 x E10 atoms / cm 2 , meeting the extreme cleanliness requirement of semiconductor equipment on the silicon carbide shunt disc.

[0017] 2. The silicon carbide shunt disc post-processing method provided by the present application controls the sub-surface crack depth caused by processing to be <20 μm through accurate control of the dry sand blasting and LAP grinding steps, improving the product quality; and the silicon carbide shunt disc is subjected to regional sand blasting and inclined incidence angle in view of the microporous structure of the silicon carbide shunt disc, ensuring that the inner wall of the hole has no edge collapse, and the broken width of the hole edge is <12 μm. Thus, the problem of processing damage caused by high hardness of silicon carbide is solved.

[0018] 3. The silicon carbide shunt disc post-processing method provided by the present application adopts H2SO4 / H2O2 / DIW, NH4OH / H2O2 / DIW and HCl / H2O2 / DIW three-step alternating cleaning, specifically removing the organic contaminants, particles and surface metal ions attached to the surface, so that the surface metal residue is <16 x E10 atoms / cm 2 (ICP-MS detection), preventing metal diffusion pollution in semiconductor process.

[0019] 4、The silicon carbide shunt disc post-processing method provided by the application has a uniform and flat surface state through LAP grinding; low-energy passivation layers are generated through HF / HNO3 / HOAc treatment; finally, high-temperature drying is performed to make the water in the pores and on the surface evaporate quickly, avoiding residues; the above makes the silicon carbide shunt disc have higher cleanliness and product quality, and improves the product performance. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 A silicon carbide shunt disc post-processing method provided for the embodiment 1 of the application is shown in the figure. Figure 2 An optical microscope image of a silicon carbide shunt disc provided for the embodiment 2 of the application. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the application will be clearly and completely described in combination with the contents in the embodiments of the application. Obviously, the described embodiments are only a part of the embodiments of the application, rather than all the embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the application.

[0022] Unless otherwise defined, all technical and scientific terms used in the specification are the same as the meanings commonly understood by those skilled in the technical field of the application. The terms used in the specification of the application are only for the purpose of describing the specific embodiments, and are not used to limit the application. The term "and / or" used in the specification includes any and all combinations of one or more related listed items.

[0023] Unless otherwise specified, the experimental methods used in the following embodiments are all conventional methods.

[0024] Unless otherwise specified, the materials, reagents and the like used in the following embodiments can be obtained from commercial channels.

[0025] Embodiment 1: A silicon carbide shunt disc post-processing method, as shown in Figure 1 includes the following steps: S1. Lipid removal cleaning: the surface of the silicon carbide flow divider is cleaned with a surfactant at a temperature of 90°C for 100 minutes. In this embodiment, the surfactant is sodium dodecyl benzene sulfonate. Specifically, the concentration of sodium dodecyl benzene sulfonate is 1.5 g / L, that is, 1.5 g of sodium dodecyl benzene sulfonate is added to 1 L of water. The purpose of this step is to remove grease and particulate contaminants on the surface of the silicon carbide flow divider. The penetration of the surfactant can be enhanced at a temperature of 90°C to promote the decomposition of grease. The soaking time of 100 minutes ensures sufficient reaction time, and the long soaking time is especially effective for removing grease from deep holes or complex structures of the silicon carbide flow divider.

[0026] S2. Dry sand blasting; specifically, in step S2, the specific steps of dry sand blasting are as follows: a micro nozzle with a diameter of 1 mm is used to perform regional dry sand blasting treatment on the subsurface broken layer of the inner wall of the small hole of the silicon carbide flow divider. The particle size of the silicon carbide abrasive is 30 μm, the abrasive flow rate is 100 g / min, the air pressure is 0.5 MPa, the incident angle is 80°, the nozzle distance is 80 mm, and high-pressure nitrogen gas is used for blowing after dry sand blasting.

[0027] In the dry sand blasting process in step S2, a micro nozzle is used for local precise treatment of the inner wall of the flow divider micro-hole, avoiding damage to non-target areas. The use of 30 μm silicon carbide abrasive and 100 g / min abrasive flow rate can quickly remove the mechanical damage layer on the inner wall of the deep hole. Combined with the nearly vertical incident angle of 80°, the vertical impact force is enhanced, the micro-hole edge is avoided, and the repeated impact caused by abrasive rebound is reduced. The nozzle distance ensures uniform abrasive flow coverage, avoiding local over-etching caused by too close distance or energy attenuation caused by too far distance. Nitrogen blowing thoroughly removes residual abrasive in the hole, eliminating the need for additional cleaning steps and facilitating direct connection to wet sand blasting.

[0028] S3. Wet sand blasting; specifically, in step S3, the specific steps of wet sand blasting are as follows: a rectangular flat nozzle with a diameter of 3 mm and a length of 50 mm is selected to perform wet sand blasting treatment on the broken layer of the surface of the silicon carbide flow divider. The particle size of the ceramic abrasive is 1500#, the volume ratio of the mixture of ceramic abrasive and deionized water is 1:5, the abrasive flow rate is 5 kg / min, the air pressure is 0.1 MPa, the incident angle is 60°, and the nozzle distance is 50 mm.

[0029] In the wet sand blasting process in step S3, the volume ratio of the mixture of ceramic abrasive and deionized water is 1:5, which is a lower concentration of abrasive and water to reduce abrasive accumulation and ensure removal efficiency. A higher flow rate is used than in dry sand blasting to achieve uniform treatment of the large area of the silicon carbide flow divider surface.

[0030] S4. First ultrasonic cleaning: medium is pure water with a resistivity of 16 MΩ-cm, ultrasonic frequency is 45 Hz, ultrasonic intensity is 15 W / in 2 , temperature is 70℃, and cleaning time is 45 min. The step S4 removes residual abrasives after wet sandblasting.

[0031] S5. LAP grinding: using a double-sided grinder, the grinding medium is diamond grinding liquid with a particle size of 5 μm; specifically, in the step S5, the specific parameters of LAP grinding are: pressure setting 5000 N, upper disc rotation speed 30 rpm, lower disc rotation speed 60 rpm, carrier rotation speed 25 rpm, and grinding time 30 min. The step S5 makes the surface after wet sandblasting more uniform and improves the flatness of the product.

[0032] S6. Second ultrasonic cleaning: medium is pure water with a resistivity of 16 MΩ-cm, ultrasonic frequency is 45 Hz, ultrasonic intensity is 15 W / in 2 , temperature is 70℃, and cleaning time is 45 min; the step S6 removes residual abrasives after LAP grinding.

[0033] S7. Organic solvent soaking and wiping: first soaking in an organic solvent, setting the temperature to 30℃, and soaking for 45 min, then using a dust-free cloth to wipe the product surface with the organic solvent until the cloth is not dirty after wiping; preferably, in the step S7, the organic solvent is isopropyl alcohol. The step S7 reduces the surface adhesion and removes residual oil and particles on the surface.

[0034] S8. First acid solution soaking: placing the silicon carbide flow plate after the organic solvent wiping in step S7 into a first acid mixed solution, the first acid mixed solution is a mixed solution of H2SO4, H2O2 and deionized water, the temperature is 60℃, and the soaking time is 60 min; preferably, in the step S8, the volume ratio of H2SO4, H2O2 and deionized water is 1:5:10. The step S8 further removes organic pollutants, improves the surface hydrophilicity, and improves the cleaning effect of the subsequent water-based cleaning solution.

[0035] S9. Alkaline solution soaking: placing the silicon carbide flow plate after the first acid solution soaking in step S8 into deionized water for 5 min, then placing the silicon carbide flow plate into an alkaline mixed solution, the alkaline mixed solution is a mixed solution of NH4OH, H2O2 and deionized water, the temperature is 60℃, using a pressurized cleaning device to flush the holes thoroughly, and the time is 60 min; preferably, in the step S9, the volume ratio of NH4OH, H2O2 and deionized water is 1:5:10. The step S9 removes submicron or even smaller particles.

[0036] S10. Second acidic solution soaking: the silicon carbide flow splitter after step S9 alkaline solution soaking is put into deionized water for 5 min, and then the silicon carbide flow splitter is put into a second acidic mixed solution for soaking, the second acidic mixed solution is a mixed solution of HCl, H2O2 and deionized water, the temperature is 60°C, and the soaking time is 60 min; preferably, in the step S10, the volume ratio of HCl, H2O2 and deionized water is 1:5:10. The step S10 removes the surface metal ions.

[0037] S11. Strong acid solution soaking: the silicon carbide flow splitter after step S10 second acidic solution soaking is put into deionized water for 5 min, and then the silicon carbide flow splitter is put into a strong acid mixed solution for soaking, the strong acid mixed solution is a mixed solution of HF, HNO3 and HOAc, the temperature is 30°C, and the soaking time is 5 min. Preferably, in the step S11, the volume ratio of HF, HNO3 and HOAc is 1:10:10. The step S11 removes the damage layer left by the previous process.

[0038] S12. First hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 90°C, and the soaking time is 60 min; S13. Second hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 70°C, and the soaking time is 60 min; S14. Third hot water bath: the medium is ultrapure water with a resistivity of 18.2 MΩ·cm, the temperature is 50°C, and the soaking time is 60 min; the use of gradient hot water bath prevents particle re-adsorption and prevents water marks from forming during drying by using particle release effect.

[0039] S15. Drying and packaging: after blowing dry with a nitrogen gun in a Class 100 environment, it is placed in a clean oven, the temperature is 170°C, and the time is 150 min.

[0040] Example 2: The difference from example 1 is that in the step S5. LAP grinding, the specific parameters of LAP grinding are: pressure setting 6000N, upper disc speed 20 rpm, lower disc speed 50 rpm, carrier speed 20 rpm, and grinding time 20 min. The optical microscope image of the silicon carbide flow splitter provided by the present embodiment is shown in Figure 2 From Figure 2 it can be seen that the right side hole edge breakage width is 11 μm, and the left side hole edge breakage width is 5 μm; the maximum hole edge breakage width is 11 μm.

[0041] Example 3: The difference from Example 1 is that in the step of "S8. First acid solution immersion", the volume ratio of H2SO4, H2O2 and deionized water is 1:3:5; in the step of "S9. Alkaline solution immersion", the volume ratio of NH4OH, H2O2 and deionized water is 1:3:5.

[0042] Example 4: The difference from Example 1 is that in the step of "S10. Second acid solution immersion", the second acid mixed solution is HCl, H2O2 and deionized water with a volume ratio of 1:4:8.

[0043] Example 5: The difference from Example 1 is that in the step of "S11. Strong acid solution immersion", the volume ratio of HF, HNO3 and HOAc is 1:5:10.

[0044] Comparative Example 1: The difference from Example 1 is that it does not contain the steps of "S2. Dry sand blasting" and "S3. Wet sand blasting".

[0045] Comparative Example 2: The difference from Example 1 is that it does not contain the step of "S11. Strong acid solution immersion".

[0046] Comparative Example 3: The difference from Example 1 is that the steps of "S12. First hot water bath", "S13. Second hot water bath" and "S14. Third hot water bath" are replaced by "Medium: ultrapure water with resistivity of 18.2 MΩ·cm, temperature: 50℃, immersion time: 180 min".

[0047] Test Example: 1. Test method: The test was carried out according to the international standard SEMI E45, and VPD-ICPMS was used.

[0048] 2. Test results and analysis Table 1 Test results of Examples 1-5 and Comparative Examples 1-3

[0049] As can be seen from Table 1, the residual amount of metal ions in Examples 1-5 of the present application is between 12.0-15.6×E10 atoms / cm 2 , which is significantly lower than that of Comparative Examples 1-3 (38.2-45.2×E10 atoms / cm 2), which indicates that the complete post-processing procedure of the present application effectively removes metal ions. Comparative Example 1 has more residual contaminants due to the lack of dry sand blasting and wet sand blasting steps; Comparative Example 2 has incomplete removal of metal ions due to the lack of strong acid soaking step; Comparative Example 3 is insufficient to fully desorb metal ions and particles due to the lack of gradient hot water bath. The crack depths of Inventive Examples 1-5 are 14.5-19.1 μm, which is much lower than 37.4 μm of Comparative Example 1, indicating that dry sand blasting and wet sand blasting significantly reduce subsurface cracks. The hole edge breakage widths of Inventive Examples 1-5 are 9.3-11.4 μm, which is much lower than 32.3 μm of Comparative Example 1, indicating that the 80° incident angle in dry sand blasting directly acts on the inner wall of the hole, reducing the lateral shear force of the abrasive on the edge, thereby reducing the risk of edge collapse, and the uniform treatment of wet sand blasting reduces the stress concentration of the edge, thereby further reducing the edge collapse.

[0050] It should be noted that the specific embodiments are only representative examples of the present application, and obviously the technical solutions of the present application are not limited to the above examples, but can also have many variations. Those skilled in the art, based on the disclosure of the present application or according to the written description of the file without any doubt, should be considered as the scope to be protected by the present patent.

Claims

1. A post-processing method for a silicon carbide distributor plate, characterized in that, The method comprises the following steps: S1. Lipid removal cleaning: using a surfactant solution to clean the surface of the silicon carbide flow divider, temperature 90-100℃, soaking for 60-120min; S2. Dry sand blasting; S3. Wet sand blasting; S4. First ultrasonic cleaning: medium is pure water with resistivity of 16-18 MΩ-cm, ultrasonic frequency of 40-50 Hz, ultrasonic intensity of 10-20 W / in, temperature of 60-80 °C, and cleaning time of 30-60 min. 2 S5. Second ultrasonic cleaning: medium is pure water with resistivity of 16-18 MΩ-cm, ultrasonic frequency of 40-50 Hz, ultrasonic intensity of 10-20 W / in, temperature of 60-80 °C, and cleaning time of 30-60 min. S5. LAP grinding: using a double-sided grinder, the grinding medium is diamond grinding liquid with a particle size of 5-30μm; S6. Second ultrasonic cleaning: medium is pure water with resistivity of 16-18 MΩ-cm, ultrasonic frequency of 40-50 Hz, ultrasonic intensity of 10-20 W / in, temperature of 60-80 °C, and cleaning time of 30-60 min. 2 S6. Second ultrasonic cleaning: medium is pure water with resistivity of 16-18 MΩ-cm, ultrasonic frequency of 40-50 Hz, ultrasonic intensity of 10-20 W / in, temperature of 60-80 °C, and cleaning time of 30-60 min. S7. Organic solvent soaking and wiping: first soaking in an organic solvent, setting the temperature to 30-50℃, soaking for 30-60min, then using a dust-free cloth to wipe the product surface with the organic solvent until the cloth is not dirty after wiping; S8. First acid solution soaking: placing the silicon carbide flow divider after the organic solvent wiping in step S7 into a first acid mixed solution, the first acid mixed solution is a mixed solution of H2SO4, H2O2 and deionized water, the temperature is 50-70℃, and the soaking time is 30-60min; S9. Alkaline solution soaking: placing the silicon carbide flow divider after the first acid solution soaking in step S8 into deionized water for 3-5min, then placing the silicon carbide flow divider into an alkaline mixed solution, the alkaline mixed solution is a mixed solution of NH4OH, H2O2 and deionized water, the temperature is 50-70℃, using a pressurized cleaning device to fully flush the hole, the time is 30-60min; S10. Second acid solution soaking: placing the silicon carbide flow divider after the alkaline solution soaking in step S9 into deionized water for 3-5min, then placing the silicon carbide flow divider into a second acid mixed solution, the second acid mixed solution is a mixed solution of HCl, H2O2 and deionized water, the temperature is 50-70℃, and the soaking time is 30-60min; S11. Strong acid solution soaking: placing the silicon carbide flow divider after the second acid solution soaking in step S10 into deionized water for 3-5min, then placing the silicon carbide flow divider into a strong acid mixed solution, the strong acid mixed solution is a mixed solution of HF, HNO3 and HOAc, the temperature is 20-30℃, and the soaking time is 3-5min.

2. The method of claim 1, wherein the silicon carbide runner plate is treated by, The method further comprises the following steps: S12. First hot water bath: the medium is ultrapure water with a resistivity of 18.2MΩ·cm, the temperature is 80-100℃, and the soaking time is 30-60min; S13. Second hot water bath: the medium is ultrapure water with a resistivity of 18.2MΩ·cm, the temperature is 60-80℃, and the soaking time is 30-60min; S14. Third hot water bath: the medium is ultrapure water with a resistivity of 18.2MΩ·cm, the temperature is 40-60℃, and the soaking time is 30-60min; S15. Drying and packaging: after blowing dry with a nitrogen gun in a Class100 environment, placing in a clean oven, the temperature is 100-200℃, and the time is 60-150min.

3. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S2, the specific steps of the dry sand blasting are as follows: the inner wall of the small hole of the silicon carbide flow disc is subjected to the dry sand blasting treatment in the sub-surface broken layer by using the micro nozzle with the diameter of 0.5-2 mm, the silicon carbide abrasive with the particle size of 5-50 μm is selected, the abrasive flow rate is 50-150 g / min, the air pressure is 0.2-0.7 MPa, the incident angle is 70°-80°, the nozzle distance is 50-100 mm, and the high-pressure nitrogen blowing is used after the dry sand blasting.

4. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S3, the specific steps of the wet sand blasting are as follows: the surface of the silicon carbide flow disc is subjected to the wet sand blasting treatment by using the micro nozzle with the diameter of 1.5-3 mm, the ceramic abrasive is selected, the mixed volume ratio of the ceramic abrasive and the deionized water is (1:5)-(1:10), the abrasive flow rate is 0.5-8 kg / min, the air pressure is 0.1-0.3 MPa, the incident angle is 60°-75°, and the nozzle distance is 30-80 mm.

5. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S5, the specific parameters of the LAP grinding are as follows: the pressure is set to 4000-6000 N, the upper disc rotation speed is 20-30 rpm, the lower disc rotation speed is 50-60 rpm, the carrier rotation speed is 20-30 rpm, and the grinding time is 10-60 min.

6. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S7, the organic solvent is any one of isopropyl alcohol, acetone, ethanol and N-methyl pyrrolidone.

7. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S8, the volume ratio of the H2SO4, H2O2 and deionized water is 1:(3-5):(5-10).

8. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S9, the volume ratio of the NH4OH, H2O2 and deionized water is 1:(3-5):(5-10).

9. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S10, the volume ratio of the HCl, H2O2 and deionized water is 1:(3-5):(5-10).

10. The method of claim 1, wherein the silicon carbide runner plate is treated by, In the step S11, the volume ratio of the HF, HNO3 and HOAc is 1:(5-10):(5-10).

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