Light emitting diode and forming method thereof

Abstract

The invention discloses a light emitting diode and a forming method thereof, and the method comprises the steps: carrying out the patterning processing of a P-type contact layer, so as to form a plurality of first protrusions which are arranged in parallel, and forming a plurality of first conical grooves which are randomly arranged in the side surfaces of the first protrusions, and then a solution containing C8-BTBT small organic molecules is printed into the first conical groove through an ink-jet printing process, and then a C8-BTBT small organic molecule single-crystal structure is grown in the first conical groove, and the existence of the single-crystal structure can change the light emitting direction of the quantum well light emitting layer, so that the light emitting efficiency of the light emitting diode can be improved, and the light emitting efficiency of the light emitting diode can be improved. Furthermore, due to the existence of the C8-BTBT organic small molecule single crystal structure and the silver nanowire conducting layer, the contact performance of the P-type contact layer and the transparent conducting layer can be improved, and the hole injection performance is further improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor light emitting, in particular to a light emitting diode and a forming method thereof. BACKGROUND

[0002] The light emitting diode is composed of a PN junction like a common diode, and also has unidirectional conductivity. When a forward voltage is applied to the light emitting diode, the holes injected from the P region to the N region and the electrons injected from the N region to the P region are recombined with the electrons in the N region and the holes in the P region within several microns near the PN junction to generate fluorescent light by spontaneous radiation. The energy states of the electrons and holes in different semiconductor materials are different. When the electrons and holes are recombined, the amount of energy released is different, and the more energy released, the shorter the wavelength of the light emitted. Commonly used are red, green or blue light emitting diodes. In the manufacturing process of the existing light emitting diode, a buffer layer, an N-type semiconductor layer, a quantum well light emitting layer and a P-type semiconductor layer are sequentially epitaxially grown on a substrate. How to improve the manufacturing process of the light emitting diode to improve the injection efficiency of the holes and the light emitting efficiency of the light emitting diode has attracted widespread attention. SUMMARY

[0003] In order to solve the above-mentioned problems in the prior art, the present application provides a light emitting diode and a forming method thereof.

[0004] To achieve the above object, the technical scheme adopted by the present application is: The embodiment of the present application provides a forming method of a light emitting diode, which comprises the following steps: Providing a growth substrate.

[0005] Epitaxially growing a buffer layer, an N-type semiconductor layer, a quantum well light emitting layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer on the growth substrate.

[0006] The P-type contact layer is subjected to a patterning process to form a plurality of first protrusions arranged in parallel.

[0007] A plurality of first tapered grooves arranged randomly are formed on the side surface of the first protrusion.

[0008] A solution containing C8-BTBT organic small molecules is prepared: the C8-BTBT organic small molecules are dissolved in a mixed solvent composed of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0009] The solution containing C8-BTBT organic small molecules is printed into the first tapered groove by an inkjet printing process, and then a C8-BTBT organic small molecule single crystal structure is grown in the first tapered groove.

[0010] forming a silver nanowire conductive layer on the first protrusions.

[0011] then depositing a transparent conductive layer on the silver nanowire conductive layer.

[0012] As a preferred embodiment, the buffer layer comprises an aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer arranged in a stack, the second aluminum nitride layer comprises a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer, and the doping concentration of gallium in the second aluminum nitride layer increases from the lower surface to the upper surface.

[0013] As a preferred embodiment, the N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer comprises alternately stacked AlGaN quantum well layers and AlGaN quantum barrier layers, and the P-type contact layer is a P-type GaN layer.

[0014] As a preferred embodiment, the electron blocking layer comprises a MgInGaN layer, a Ga2O3 layer, and a MgGaN layer arranged in a stack.

[0015] As a preferred embodiment, the good solvent is toluene, chlorobenzene, or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0016] As a preferred embodiment, the concentration of C8-BTBT organic small molecules in the solution containing C8-BTBT organic small molecules is 1-5 mg / ml.

[0017] As a preferred embodiment, the silver nanowire conductive layer is formed by a spraying process.

[0018] As a preferred embodiment, the silver nanowire conductive layer is formed by spraying a silver nanowire-containing suspension, and the concentration of silver nanowires in the silver nanowire-containing suspension is 30-60 mg / mL.

[0019] The application also provides a light-emitting diode prepared by the above method, the light-emitting diode wafer comprising a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer, and a transparent conductive layer arranged in a stack, wherein the surface of the P-type contact layer has a plurality of first protrusions arranged in parallel, the side surface of the first protrusions has a plurality of first conical grooves arranged randomly, and C8-BTBT organic small molecule single crystal structures are arranged in the first conical grooves.

[0020] Compared with the prior art, the light emitting diode and the forming method thereof have the following beneficial effects: In the forming method of the light emitting diode, the P-type contact layer is patterned to form a plurality of first protrusions arranged in parallel, a plurality of first tapered grooves arranged randomly are formed on the side surface of the first protrusion, and then a solution containing C8-BTBT organic small molecules is printed into the first tapered groove through an inkjet printing process, and then a C8-BTBT organic small molecule single crystal structure is grown in the first tapered groove. The existence of the single crystal structure can change the light emitting direction of the quantum well light emitting layer, thereby improving the light emitting efficiency of the light emitting diode. Further, the existence of the C8-BTBT organic small molecule single crystal structure and the silver nanowire conductive layer can improve the contact performance of the P-type contact layer and the transparent conductive layer, thereby improving the hole injection performance. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0022] Figure 1 The structural schematic diagram of the present application for epitaxially growing a buffer layer, an N-type semiconductor layer, a quantum well light emitting layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer on a growth substrate.

[0023] Figure 2 The structural schematic diagram of the present application for patterning the P-type contact layer to form a plurality of first protrusions arranged in parallel.

[0024] Figure 3 The structural schematic diagram of the present application for forming a plurality of first tapered grooves arranged randomly on the side surface of the first protrusion.

[0025] Figure 4 The structural schematic diagram of the present application for growing a C8-BTBT organic small molecule single crystal structure in the first tapered groove.

[0026] Figure 5 The structural schematic diagram of the present application for forming a silver nanowire conductive layer and a transparent conductive layer on the P-type semiconductor layer.

[0027] BRIEF DESCRIPTION OF DRAWINGS 100, growth substrate; 200, buffer layer; 300, N-type semiconductor layer; 400, quantum well light emitting layer; 500, electron blocking layer; 600, P-type semiconductor layer; 700, P-type contact layer; 701, first protrusion; 800, first tapered groove; 900, C8-BTBT organic small molecule single crystal structure; 1000, composite conductive layer. DETAILED DESCRIPTION

[0028] The embodiments of the present application will be described in detail hereinafter with reference to the drawings and embodiments, so that the technical means applied by the present application to solve the technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments of the present application and each feature in the embodiments can be combined with each other without conflict, and the technical solutions formed thereby are all within the protection scope of the present application. In the drawings, the sizes and relative sizes of layers and regions can be exaggerated for clarity. The same reference signs represent the same elements throughout.

[0029] It should be understood that although the terms "first", "second", "third", etc. are used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part without departing from the teachings of the present application.

[0030] It should be understood that spatial relationship terms, such as "above", "upper", "below", "lower", etc., can be used herein for ease of description to describe the relationship between one element or feature and another element or feature as shown in the drawings. It should be understood that in addition to the orientation shown in the drawings, the spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is turned over, then the element or feature described as "below" the other element or feature will be oriented "above" the other element or feature. Therefore, the exemplary terms "below" and "under" can include both the upward and downward orientations. The device can be additionally oriented (rotated 90 degrees or other orientations) and the spatial descriptions used herein are interpreted accordingly.

[0031] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of associated items.

[0032] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Embodiments of the application are described herein with reference to plan views that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Embodiments of the application are described herein with reference to both plan and cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing.

[0033] For a thorough understanding of the application, detailed descriptions of specific structures and procedures are set forth in the following description and should be regarded as illustrative, rather than restrictive, of the technical solutions presented herein. The preferred embodiments of the application are described in detail below, however, the application can have other embodiments in addition to those described.

[0034] Embodiments of the application provide a method for forming a light emitting diode, the method comprising the steps of: As shown in Figure 1 A growth substrate 100 is provided, which can be a sapphire substrate, a silicon substrate or a silicon carbide substrate, and in specific embodiments of the application, the growth substrate 100 is a sapphire substrate.

[0035] As shown in Figure 1 A buffer layer 200, an N-type semiconductor layer 300, a quantum well light emitting layer 400, an electron blocking layer 500, a P-type semiconductor layer 600 and a P-type contact layer 700 are epitaxially grown on the growth substrate 100.

[0036] In specific embodiments, the buffer layer 200 comprises an aluminum oxynitride layer, a first aluminum nitride layer and a second aluminum nitride layer stacked, the second aluminum nitride layer comprises a lower surface in contact with the first aluminum nitride layer and an upper surface facing away from the first aluminum nitride layer, and the doping concentration of gallium in the second aluminum nitride layer increases from the lower surface to the upper surface.

[0037] In specific embodiments, the specific preparation process of the buffer layer 200 is: forming an aluminum oxynitride layer by a magnetron sputtering process, the specific conditions of the magnetron sputtering process are: selecting pure aluminum palladium material, introducing inert argon gas as sputtering gas, and introducing nitrogen and oxygen as nitrogen source and oxygen source respectively, adjusting the volume ratio of nitrogen and oxygen to be 1:1 to 5:1, adjusting the frequency of magnetron sputtering to be 500-2000W, adjusting the temperature of magnetron sputtering to be 200-500℃, and during the sputtering process, the gas pressure in the chamber is 0.1-0.5Pa, to grow an aluminum oxynitride layer with a thickness of 10-40 nanometers, more specifically, the thickness of the aluminum oxynitride layer is 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers and 40 nanometers.

[0038] In specific embodiments, the specific preparation process of the buffer layer 200 is: forming an aluminum oxynitride layer by a magnetron sputtering process, the specific conditions of the magnetron sputtering process are: selecting pure aluminum palladium material, introducing inert argon gas as sputtering gas, and introducing nitrogen and oxygen as nitrogen source and oxygen source respectively, adjusting the volume ratio of nitrogen and oxygen to be 1:1 to 5:1, adjusting the frequency of magnetron sputtering to be 500-2000W, adjusting the temperature of magnetron sputtering to be 200-500℃, and during the sputtering process, the gas pressure in the chamber is 0.1-0.5Pa, to grow an aluminum oxynitride layer with a thickness of 10-40 nanometers, more specifically, the thickness of the aluminum oxynitride layer is 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 35 nanometers and 40 nanometers.

[0039] In specific embodiments, the second aluminum nitride layer is grown by metal organic chemical vapor deposition technology, trimethylaluminum is used as the aluminum source, ammonia is used as the nitrogen source, and trimethylgallium is used as the gallium source, the growth temperature is 900-1200℃, the gas pressure in the reaction chamber is 10-200 Torr, the flow ratio of the aluminum source, the nitrogen source and the gallium source is adjusted, wherein the molar flow ratio of the nitrogen source (ammonia) to the aluminum source (trimethylaluminum) is 1500-3000, and the molar flow ratio of trimethylgallium to trimethylaluminum is 0.01-0.2, the growth process is adjusted to form a gallium-doped aluminum nitride layer, and in the direction from the lower surface to the upper surface, the doping concentration of gallium in the second aluminum nitride layer gradually increases from (1×10¹ 6 cm⁻³-5×10¹ 6 cm⁻³) to (2×10 19 cm⁻³-7×10 19 cm⁻³), to grow a second aluminum nitride layer with a thickness of 20-100 nanometers, more specifically, the thickness of the second aluminum nitride layer is 20 nanometers, 35 nanometers, 50 nanometers, 65 nanometers, 80 nanometers, 90 nanometers and 100 nanometers.

[0040] In specific embodiments, the N-type semiconductor layer 300 can be specifically an N-type aluminum gallium nitride layer, the P-type semiconductor layer 600 can be specifically a P-type aluminum gallium nitride layer, the quantum well light-emitting layer 400 can be specifically an AlGaN quantum well layer and an AlGaN quantum barrier layer alternately stacked, the P-type contact layer 700 is a P-type GaN layer, and the N-type semiconductor layer 300, the quantum well light-emitting layer 400, the P-type semiconductor layer 600, and the P-type contact layer 700 are prepared by a metal organic chemical vapor deposition technology.

[0041] In specific embodiments, the electron blocking layer 500 includes a MgInGaN layer, a Ga2O3 layer, and a MgGaN layer stacked, and is prepared by a metal organic chemical vapor deposition technology. By arranging the electron blocking layer 500, the injection of holes to the quantum well light-emitting layer 400 can be promoted while effectively blocking electrons.

[0042] As shown in FIG. 7A, the P-type contact layer 700 is subjected to a patterning process to form a plurality of first protrusions 701 arranged in parallel. Figure 2

[0043] In specific embodiments, the P-type contact layer 700 is subjected to a wet etching process or a dry etching process to form a plurality of first protrusions 701 arranged in parallel.

[0044] In specific embodiments, the first protrusions 701 have a cross-sectional shape of a triangle, a trapezoid, or a semicircle.

[0045] As shown in FIG. 7B, a plurality of first tapered grooves 800 arranged randomly are formed on the side surface of the first protrusions 701. Figure 3

[0046] In specific embodiments, the laser etching process is used to form a plurality of first tapered grooves 800 arranged randomly on the side surface of the first protrusions 701.

[0047] A solution containing C8-BTBT organic small molecules is prepared: C8-BTBT organic small molecules are dissolved in a mixed solvent composed of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0048] In specific embodiments, the good solvent is toluene, chlorobenzene, or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0049] In specific embodiments, the concentration of C8-BTBT organic small molecules in the solution containing C8-BTBT organic small molecules is 1-5 mg / ml. ​​

[0050] In a specific embodiment, a mixed solvent is formed by mixing one of toluene, chlorobenzene, and chloroform with N,N-dimethylformamide or dimethyl phthalate, wherein the volume ratio of the two is 5:1, 6:1, 7:1, 8:1, 9:1, or 10:1. Then, the C8-BTBT organic small molecule is dissolved in the mixed solvent to form a solution containing the C8-BTBT organic small molecule, wherein the concentration of the C8-BTBT organic small molecule in the solution is 1 mg / ml, 1.5 mg / ml, 2 mg / ml, 2.5 mg / ml, 3 mg / ml, 3.5 mg / ml, 4 mg / ml, 4.5 mg / ml, or 5 mg / ml.

[0051] like Figure 4 As shown, a solution containing C8-BTBT organic small molecules is printed into the first conical groove 800 using an inkjet printing process, and then a C8-BTBT organic small molecule single crystal structure 900 is grown in the first conical groove 800.

[0052] In a specific embodiment, by adjusting the dosage of each inkjet print, when the solution containing C8-BTBT organic small molecules is printed onto the first conical groove 800, the solvent evaporates, causing the C8-BTBT organic small molecules to begin crystallizing, thereby forming a high-quality C8-BTBT organic small molecule single crystal structure 900. Through multiple inkjet prints, the C8-BTBT organic small molecule single crystal structure 900 fills the first conical groove 800.

[0053] like Figure 5 As shown, a silver nanowire conductive layer is formed on the first protrusion 701, and then a transparent conductive layer is deposited on the silver nanowire conductive layer to form a composite conductive layer 1000.

[0054] In a specific embodiment, the silver nanowire conductive layer is formed by a spraying process. More specifically, the silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

[0055] In a more specific embodiment, the concentration of silver nanowires in the suspension containing silver nanowires is adjusted to 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, 50 mg / mL, 55 mg / mL, or 60 mg / mL, and then the silver nanowire conductive layer is formed by multiple sprayings, specifically 5-10 times, to form a silver nanowire conductive layer of appropriate thickness.

[0056] In specific embodiments, ITO or AZO is formed as the transparent conductive layer by low temperature deposition techniques.

[0057] As shown in Figure 5 The present application also provides a light emitting diode, which is prepared by the forming method of the light emitting diode, and the light emitting diode wafer comprises a buffer layer 200, an N-type semiconductor layer 300, a quantum well light emitting layer 400, an electron blocking layer 500, a P-type semiconductor layer 600, a P-type contact layer 700, and a composite conductive layer 1000 which are stacked, and the composite conductive layer 1000 comprises a silver nanowire conductive layer and a transparent conductive layer, wherein the surface of the P-type contact layer 700 has a plurality of first protrusions 701 which are arranged in parallel, the side surface of the first protrusion 701 has a plurality of first tapered grooves 800 which are arranged randomly, and a C8-BTBT organic small molecule single crystal structure 900 is arranged in the first tapered groove 800.

[0058] Embodiments of the present application provide a forming method of a light emitting diode, which comprises the following steps: A growth substrate is provided.

[0059] A buffer layer, an N-type semiconductor layer, a quantum well light emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer are epitaxially grown on the growth substrate.

[0060] The P-type contact layer is subjected to a patterning process to form a plurality of first protrusions which are arranged in parallel.

[0061] A plurality of first tapered grooves which are arranged randomly are formed on the side surface of the first protrusion.

[0062] A solution containing C8-BTBT organic small molecules is prepared: C8-BTBT organic small molecules are dissolved in a mixed solvent composed of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules.

[0063] The solution containing C8-BTBT organic small molecules is printed into the first tapered groove by an inkjet printing process, and C8-BTBT organic small molecule single crystal structures are grown in the first tapered groove.

[0064] A silver nanowire conductive layer is formed on the first protrusion.

[0065] Then, a transparent conductive layer is deposited on the silver nanowire conductive layer.

[0066] Further, the buffer layer comprises an aluminum oxynitride layer, a first aluminum nitride layer and a second aluminum nitride layer arranged in a stack, the second aluminum nitride layer comprises a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer, and the doping concentration of gallium in the second aluminum nitride layer increases from the lower surface to the upper surface.

[0067] Further, the N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer comprises AlGaN quantum well layers and AlGaN quantum barrier layers arranged in an alternating stack, and the P-type contact layer is a P-type GaN layer.

[0068] Further, the electron blocking layer comprises a MgInGaN layer, a Ga2O3 layer and a MgGaN layer arranged in a stack.

[0069] Further, the good solvent is toluene, chlorobenzene or chloroform, and the poor solvent is N,N-dimethylformamide or dimethyl phthalate.

[0070] Further, the concentration of the C8-BTBT organic small molecules in the solution containing the C8-BTBT organic small molecules is 1-5 mg / ml.

[0071] Further, the silver nanowire conductive layer is formed by a spraying process.

[0072] Further, the silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, and the concentration of the silver nanowires in the suspension containing silver nanowires is 30-60 mg / mL.

[0073] The application further provides a light-emitting diode prepared by the method for forming a light-emitting diode, and the light-emitting diode wafer comprises a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer and a transparent conductive layer arranged in a stack, wherein the surface of the P-type contact layer has a plurality of first protrusions arranged in parallel, the side surface of the first protrusion has a plurality of first tapered grooves arranged randomly, and a C8-BTBT organic small molecule single crystal structure is arranged in the first tapered groove.

[0074] The above merely provides a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present application, which should be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A method for forming a light-emitting diode, characterized in that: The method for forming the light-emitting diode includes the following steps: Provide growth substrate; A buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer are epitaxially grown on the growth substrate. The P-type contact layer is patterned to form multiple parallel first protrusions; A plurality of first conical grooves are formed on the side surface of the first protrusion in a random arrangement; Preparation of a solution containing C8-BTBT organic small molecules: Dissolve C8-BTBT organic small molecules in a mixed solvent consisting of a good solvent and a poor solvent to form a solution containing C8-BTBT organic small molecules; A solution containing C8-BTBT organic small molecules is printed into the first conical groove using an inkjet printing process, thereby growing a C8-BTBT organic small molecule single crystal structure in the first conical groove. A silver nanowire conductive layer is formed on the first protrusion; Next, a transparent conductive layer is deposited on the silver nanowire conductive layer.

2. The method for forming a light-emitting diode according to claim 1, characterized in that: The buffer layer includes a stacked aluminum oxynitride layer, a first aluminum nitride layer, and a second aluminum nitride layer. The second aluminum nitride layer includes a lower surface in contact with the first aluminum nitride layer and an upper surface away from the first aluminum nitride layer. From the lower surface to the upper surface, the gallium doping concentration in the second aluminum nitride layer gradually increases.

3. The method for forming a light-emitting diode according to claim 1, characterized in that: The N-type semiconductor layer is an N-type AlGaN layer, the P-type semiconductor layer is a P-type AlGaN layer, the quantum well light-emitting layer includes alternating stacked AlGaN quantum well layers and AlGaN quantum barrier layers, and the P-type contact layer is a P-type GaN layer.

4. The method for forming a light-emitting diode according to claim 1, characterized in that: The electron blocking layer comprises a stacked MgInGaN layer, a Ga2O3 layer, and a MgGaN layer.

5. The method for forming a light-emitting diode according to claim 1, characterized in that: The good solvent is toluene, chlorobenzene, or chloroform, and the bad solvent is N,N-dimethylformamide or dimethyl phthalate.

6. The method for forming a light-emitting diode according to claim 5, characterized in that: The concentration of C8-BTBT organic small molecules in the solution is 1-5 mg / ml.

7. The method for forming a light-emitting diode according to claim 1, characterized in that: The silver nanowire conductive layer is formed by a spraying process.

8. The method for forming a light-emitting diode according to claim 1, characterized in that: The silver nanowire conductive layer is formed by spraying a suspension containing silver nanowires, wherein the concentration of silver nanowires in the suspension is 30-60 mg / mL.

9. A light-emitting diode, characterized in that, The light-emitting diode is formed using the light-emitting diode forming method according to any one of claims 1-8. The light-emitting diode wafer includes a buffer layer, an N-type semiconductor layer, a quantum well light-emitting layer, an electron blocking layer, a P-type semiconductor layer, a P-type contact layer, a silver nanowire conductive layer, and a transparent conductive layer stacked together. The surface of the P-type contact layer has a plurality of parallel first protrusions, and the side surface of the first protrusions has a plurality of randomly arranged first conical grooves. A C8-BTBT organic small molecule single crystal structure is disposed in the first conical groove.

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