Chemical mechanical polishing control method, device and equipment and storage medium

Abstract

The invention provides a chemical mechanical polishing control method, device and equipment and a storage medium, and relates to the technical field of chemical mechanical polishing. Whether collision occurs or not can be judged based on the motion parameters of the polishing head and the trimmer in the parameter setting stage before chemical mechanical polishing is actually executed. When collision occurs, the motion frequency and the initial position are automatically adjusted to obtain corrected motion parameters capable of avoiding collision. And performing chemical mechanical polishing control based on the corrected motion parameters. Therefore, collision is pre-judged in advance, motion parameters are adjusted, parameter adjustment based on artificial experience in the actual operation stage is avoided, and reliability is improved. Or real-time collision monitoring is avoided, the hardware cost is reduced, and collision between the polishing head and the trimmer is effectively avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chemical mechanical polishing, and in particular to a chemical mechanical polishing control method, device, equipment and storage medium. BACKGROUND

[0002] Chemical mechanical planarization (CMP) plays an important role in the process of semiconductor technology and is a key process for realizing wafer surface planarization. In the working process of a CMP device, a wafer is adsorbed on a polishing head, the polishing head presses the wafer to contact the surface of a polishing pad, a chemical liquid is filled in the contact surface, the polishing head and the polishing pad rotate relatively, and thus chemical mechanical polishing is realized. At the same time, a conditioner presses the polishing pad and also rotates relatively with the polishing head, so as to trim the surface topography of the polishing pad, and then the surface topography of the wafer is affected through the surface topography of the polishing pad.

[0003] The polishing head, the conditioner and the polishing pad all rotate around their own centers. In order to realize wafer planarization and make the most of the polishing pad, the polishing head not only rotates around its own center but also has relative motion in the radial direction of the polishing pad; the conditioner not only rotates around its own center but also has relative motion in the radial direction of the polishing pad. The paths of the polishing head and the conditioner need to be planned in advance. If there is no overlapping area between the two, not only the wafer planarization effect will be affected, but also consumables will be wasted; if there is an overlapping area between the two, the coordination of the two must be carefully planned, otherwise the two will collide, which may cause shutdown for maintenance and replacement, or even a safety accident. At present, one way is to rely on the experience of process engineers to adjust parameters according to the collision situation in the actual running stage to avoid the occurrence of collision situation, but the reliability of manual experience is low. Another way is to increase sensors to monitor the distance between the polishing head and the conditioner in real time, but increasing hardware will increase the cost. SUMMARY

[0004] Embodiments of the present application provide a chemical mechanical polishing control method, device, equipment and storage medium to solve the problem of how to effectively avoid collision between the polishing head and the conditioner in chemical mechanical polishing.

[0005] In a first aspect, embodiments of the present application provide a chemical mechanical polishing control method applied to control a chemical mechanical polishing device; the chemical mechanical polishing device includes a polishing head, a conditioner and a polishing pad; and the method includes:

[0006] obtaining motion parameters of the polishing head and the conditioner respectively; the motion parameters include initial positions, motion modes and motion time lengths; the motion mode includes motion frequency, motion amplitude and motion waveform; and the motion ranges of the polishing head and the conditioner partially overlap;

[0007] determine whether the polishing head and the conditioner collide within the motion duration based on the initial position and the motion mode;

[0008] if the collision occurs and the motion frequencies are different, set the motion frequencies of the polishing head and the conditioner to be the same;

[0009] after the motion frequencies are set to be the same, modify the initial position or the motion amplitude of the polishing head and the conditioner until the collision between the polishing head and the conditioner does not occur within the motion duration, to obtain modified motion parameters;

[0010] after the modified motion parameters are obtained, control the conditioner to modify the polishing pad and control the polishing head to polish according to the modified motion parameters, to realize chemical mechanical polishing control.

[0011] In a possible implementation, the determination of whether the polishing head and the conditioner collide within the motion duration based on the initial position and the motion mode comprises: obtaining the positions of the polishing head and the conditioner at the next moment based on the initial position and the motion mode at the initial moment; determining whether the current moment is within the motion duration based on the initial moment, the current moment, and the motion duration; if the current moment is within the motion duration, obtaining the position of the polishing head at the current moment based on the position of the polishing head at the previous moment and the motion mode; obtaining the position of the conditioner at the current moment based on the position of the conditioner at the previous moment and the motion mode; determining whether the polishing head and the conditioner collide according to the positions of the polishing head and the conditioner at the current moment; if the polishing head and the conditioner do not collide, determining the positions at the next moment based on the positions of the polishing head and the conditioner at the current moment, and determining whether the collision occurs until the motion duration is reached.

[0012] In a possible implementation, the determination of whether the polishing head and the conditioner collide according to the positions of the polishing head and the conditioner at the current moment comprises: determining the edge range of the polishing head according to the position of the polishing head at the current moment and the radius; determining the edge range of the conditioner according to the position of the conditioner at the current moment and the radius; and determining whether the polishing head and the conditioner collide based on the edge ranges of the polishing head and the conditioner.

[0013] In a possible implementation, after the determination of whether the polishing head and the conditioner collide within the motion duration based on the initial position and the motion mode, the method further comprises: if the collision does not occur, controlling the conditioner to modify the polishing pad and controlling the polishing head to polish according to the current motion parameters, to realize chemical mechanical polishing control.

[0014] In a possible implementation, the motion waveform comprises a sine wave, a cosine wave, a step wave, or a square wave.

[0015] In a possible implementation, after determining whether the polishing head and the conditioner collide within the motion duration based on the initial position and the motion mode, the method further includes: if the polishing head and the conditioner collide within the motion duration, issuing a prompt signal to prompt that the frequency, the initial position, or the motion amplitude needs to be adjusted.

[0016] In a second aspect, an embodiment of the present application provides a chemical mechanical polishing control device, applied to control a chemical mechanical polishing device; the chemical mechanical polishing device includes a polishing head, a conditioner, and a polishing pad; the device includes:

[0017] an acquisition module, configured to acquire motion parameters of the polishing head and the conditioner respectively; the motion parameters include an initial position, a motion mode, and a motion duration; the motion mode includes a motion frequency, a motion amplitude, and a motion waveform; and the motion ranges of the polishing head and the conditioner partially overlap;

[0018] a determination module, configured to determine whether the polishing head and the conditioner collide within the motion duration based on the initial position and the motion mode;

[0019] a frequency adjustment module, configured to set the motion frequencies of the polishing head and the conditioner to be the same if the collision occurs and the motion frequencies are different;

[0020] an amplitude adjustment module, configured to modify the initial position or the motion amplitude of the polishing head and the conditioner after the motion frequencies are set to be the same, until the polishing head and the conditioner do not collide within the motion duration, to obtain modified motion parameters;

[0021] a control module, configured to control the conditioner to modify the polishing pad and control the polishing head to polish according to the modified motion parameters after the modified motion parameters are obtained, to implement chemical mechanical polishing control.

[0022] In a third aspect, an embodiment of the present application provides an electronic device, including a memory and a processor; the memory stores a computer program; and the processor implements the method in the first aspect or any possible implementation manner of the first aspect when executing the computer program.

[0023] In a fourth aspect, an embodiment of the present application provides a computer readable storage medium, which stores a computer program; and the computer program is executed by a processor to implement the method in the first aspect or any possible implementation manner of the first aspect.

[0024] In a fifth aspect, an embodiment of the present application provides a computer program product, including a computer program; and the computer program is executed by a processor to implement the method in the first aspect or any possible implementation manner of the first aspect.

[0025] The embodiment of the present application judges whether collision occurs based on motion parameters of the polishing head and the conditioner respectively in the parameter setting stage before actually performing chemical mechanical polishing. When collision occurs, the motion frequency and initial position are automatically adjusted to obtain corrected motion parameters capable of avoiding collision. Then, chemical mechanical polishing control is performed based on the corrected motion parameters. Thus, collision is predicted in advance and motion parameters are adjusted, which improves reliability, avoids real-time collision monitoring and reduces hardware cost, and effectively avoids collision between the polishing head and the conditioner. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is an application scenario diagram of the chemical mechanical polishing control method provided by the embodiment of the present application;

[0027] Figure 2 is a flowchart of the implementation of the chemical mechanical polishing control method provided by the embodiment of the present application;

[0028] Figure 3 is a structural schematic diagram of the chemical mechanical polishing control device provided by the embodiment of the present application;

[0029] Figure 4 is a schematic diagram of an electronic device provided by the embodiment of the present application. DETAILED DESCRIPTION

[0030] The embodiment of the present application will be described in detail below with reference to the drawings.

[0031] Figure 1 is an application scenario diagram of the chemical mechanical polishing control method provided by the embodiment of the present application. Referring to Figure 1 , a top view of a chemical mechanical polishing device is shown. The chemical mechanical polishing device includes a polishing head 1, a conditioner 2 and a polishing pad 3. The polishing head 1, the conditioner 2 and the polishing pad 3 all rotate around their own centers. For example, Figure 1 the rotation direction of the polishing head 11, the rotation direction of the conditioner 21 are shown. In addition to rotating around its own center, the polishing head also generates relative motion with respect to the radial direction of the polishing pad, for example, the radial motion direction 12 of the polishing head can be linear reciprocating motion; in addition to rotating around its own center, the conditioner also generates relative motion with respect to the radial direction of the polishing pad, for example, the radial motion direction 22 of the conditioner can be reciprocating swing with fixed radius. In order to realize the planarization of the wafer and make the most of the polishing pad, the conditioner needs to be used to correct the polishing pad while the polishing head is polishing, and the motion range of the polishing head and the conditioner at least partially overlaps. When the motion range of the polishing head and the conditioner overlaps, collision may occur.

[0032] The embodiment of the present application effectively avoids collision between the polishing head and the conditioner in the chemical mechanical polishing process by predicting collision in advance and adjusting motion parameters.

[0033] Figure 2 is an implementation flowchart of the chemical mechanical polishing control method provided by the embodiments of the present application. Referring to Figure 2 , the chemical mechanical polishing device comprises a polishing head, a conditioner and a polishing pad; the method comprises:

[0034] Step 201: Obtain the motion parameters of the polishing head and the conditioner respectively; the motion parameters comprise initial positions, motion modes and motion time lengths; the motion mode comprises a motion frequency, a motion amplitude and a motion waveform; the motion ranges of the polishing head and the conditioner partially overlap;

[0035] It should be noted that the dimensions of the motion parameters of the polishing head and the conditioner are the same, and the specific parameter values can be different. The following describes each motion parameter taking the polishing head as an object, and the specific description is also applicable to the conditioner.

[0036] For example, the initial position is a position on the polishing pad. Further, the position of the polishing head is the coordinate of the center point of the polishing head in the coordinate system of the polishing pad, and the origin of the coordinate system is the center of the polishing pad; the position of the conditioner is the coordinate of the center point of the conditioner in the coordinate system of the polishing pad.

[0037] For example, the motion frequency represents the number of reciprocating oscillations of the polishing head or the conditioner per unit time on the polishing pad, and the unit is Hz.

[0038] For example, the motion amplitude represents the maximum amplitude of the displacement of the polishing head or the conditioner.

[0039] For example, the motion waveform represents a function of the displacement of the polishing head or the conditioner changing with time. For example, the motion waveform comprises a sine wave, a cosine wave, a step wave or a square wave. For another example, the sine wave can be expressed as s(t)=A·sin(2πft).

[0040] For example, the motion ranges of the polishing head and the conditioner partially overlap, which means that there is an intersection between the motion trajectory interval of the polishing head and the motion trajectory interval of the conditioner.

[0041] For example, the motion time length is determined by a specific polishing process recipe. For example, the motion time length can be 120s. It should be noted that the motion time lengths of the polishing head and the conditioner can be the same or different. In addition, the starting time of the polishing head and the conditioner can be the same or different.

[0042] In some embodiments, after obtaining the motion parameters of the polishing head and the conditioner respectively, the method further comprises: verifying whether the motion ranges of the polishing head and the conditioner partially overlap based on the motion parameters of the polishing head and the conditioner.

[0043] Exemplarily, the polishing head motion envelope is calculated based on the following formula:

[0044]

[0045] wherein x h (t) represents the motion trajectory of the polishing head, r h represents the polishing head radius;

[0046] The trimmer motion envelope is calculated based on the following formula:

[0047]

[0048] wherein x d (t) represents the motion trajectory of the trimmer, r d represents the trimmer radius; if the polishing head motion envelope and the trimmer motion envelope have an intersection, it is determined that the motion ranges of the polishing head and the trimmer partially overlap.

[0049] In step 202, whether the polishing head and the trimmer collide within the motion duration is determined based on the initial positions and the motion modes.

[0050] It should be noted that the polishing head and the trimmer have certain radii. The collision of the polishing head and the trimmer means that the positions of the edges of the polishing head and the edges of the trimmer coincide at the same time.

[0051] In the following embodiment, the motion duration is discretized into multiple time points at fixed steps, and the collision risk is continuously scanned in the time dimension through dynamic recursive position tracking.

[0052] In one possible implementation, determining whether the polishing head and the trimmer collide within the motion duration based on the initial positions and the motion modes comprises:

[0053] In step 2021, the positions of the polishing head and the trimmer at the next time point are obtained based on the initial positions and the motion modes at the initial time point.

[0054] It should be noted that step 2021 starts to calculate the positions after the initial time point based on the initial positions, and only needs to be calculated once. In subsequent steps, the current time point is constantly changed for dynamic iteration.

[0055] In step 2022, whether the current time point is within the motion duration is determined based on the initial time point, the current time point, and the motion duration.

[0056] It should be noted that step 2022 is a check on the validity of the time interval. When the motion duration of any one of the polishing head or the trimmer is reached, the component reaching the motion duration stops working and can return to the original position, so the collision will not occur again.

[0057] Step 2023, if the current time is in the motion time range, the position of the polishing head at the current time is obtained based on the position of the polishing head at the last time and the motion mode;

[0058] Step 2024, the position of the trimmer at the current time is obtained based on the position of the trimmer at the last time and the motion mode;

[0059] Step 2025, whether the polishing head and the trimmer collide is judged according to the positions of the polishing head and the trimmer at the current time;

[0060] In some embodiments, judging whether the polishing head and the trimmer collide according to the positions of the polishing head and the trimmer at the current time comprises: determining the edge range of the polishing head according to the position of the polishing head at the current time and the radius; determining the edge range of the trimmer according to the position of the trimmer at the current time and the radius; and judging whether the polishing head and the trimmer collide based on the edge ranges of the polishing head and the trimmer.

[0061] Step 2026, if the polishing head and the trimmer do not collide, the positions at the next time are determined based on the positions of the polishing head and the trimmer at the current time, and whether collision occurs is judged until the motion time is reached.

[0062] It should be noted that step 2026 includes two cases: case 1, the motion time is reached without collision, at which time step 203 is continued to be executed; and case 2, collision occurs without the motion time being reached, at which time step 202 is stopped to be executed and step 203 is continued to be executed.

[0063] Embodiments of the present application gradually calculate the positions of the polishing head and the trimmer based on time slicing through real-time position monitoring, establish a spatial position relationship model of the two on the polishing pad, and perform collision prediction.

[0064] In a possible implementation, after judging whether the polishing head and the trimmer collide within the motion time based on the initial position and the motion mode, the method further comprises: if the polishing head and the trimmer collide within the motion time, issuing a warning signal to prompt that the frequency, the initial position or the motion amplitude needs to be adjusted.

[0065] Step 203, if collision occurs and the motion frequencies of the polishing head and the trimmer are different, the motion frequencies of the polishing head and the trimmer are set to be the same;

[0066] It should be noted that when the polishing head and the trimmer have a frequency difference, the traditional scheme cannot eliminate the risk of periodic interference by adjusting the position only. This step fundamentally eliminates the possibility of repeated collision caused by different frequency motion by forcibly synchronizing the frequencies.

[0067] Exemplarily, setting the motion frequency of the polishing head and the truing device to be the same includes: modifying the motion frequency of the polishing head to be the same as the motion frequency of the truing device, or modifying the motion frequency of the truing device to be the same as the motion frequency of the polishing head, or setting the motion frequency of the polishing head and the truing device to be a preset frequency.

[0068] Step 204, after the motion frequency is set to be the same, the initial position or the motion amplitude of the polishing head and the truing device is modified until the polishing head and the truing device do not collide in the motion time range, and the modified motion parameters are obtained.

[0069] It should be noted that after the frequency is synchronized, periodic collision may still occur due to the initial phase difference (for example, the two devices have the same frequency but the starting time difference is half a period). In this step, the initial position is fine-tuned under the condition of frequency locking through a position iterative optimization algorithm, and the risk of same-frequency interference is completely eliminated.

[0070] Exemplarily, modifying the initial position of the polishing head and the truing device includes: fixing the initial position of the polishing head, and modifying the initial position of the truing device.

[0071] Exemplarily, in the modified motion parameters, the initial position is the modified initial position, and the frequency is the synchronized frequency.

[0072] The above step 204 and step 203 form a cascade optimization, that is, the periodic risk is eliminated through frequency synchronization, and the phase difference risk is solved through position iteration.

[0073] Step 205, after the modified motion parameters are obtained, the truing device is controlled to modify the polishing pad and the polishing head is controlled to polish according to the modified motion parameters, and chemical mechanical polishing control is realized.

[0074] In a possible implementation, after it is judged whether the polishing head and the truing device collide in the motion time range based on the initial position and the motion mode, the method further includes: if no collision occurs, the truing device is controlled to modify the polishing pad and the polishing head is controlled to polish according to the current motion parameters, and chemical mechanical polishing control is realized.

[0075] The embodiment of the application judges whether collision occurs based on the motion parameters of the polishing head and the truing device in the parameter setting stage before actually performing chemical mechanical polishing. When collision occurs, the motion frequency and the initial position are automatically adjusted to obtain modified motion parameters that can avoid collision. Then, chemical mechanical polishing control is performed based on the modified motion parameters. In this way, collision is predicted in advance and the motion parameters are adjusted, which improves the reliability and avoids adjusting the parameters based on artificial experience in the actual running stage. Alternatively, real-time collision monitoring is avoided and the hardware cost is reduced, and the collision between the polishing head and the truing device is effectively avoided.

[0076] The embodiment of the present application advances the collision risk, that is, advances the collision detection from the "production runtime" to the "parameter planning phase". Based on the polishing head and the dresser motion trajectory, the device parameters are predicted and corrected in advance to realize the anti-collision.

[0077] The following describes the implementation process of the present application with a comprehensive embodiment. In a possible implementation manner, the chemical mechanical polishing control method comprises:

[0078] Step 1: Set the calculation step time interval Δt, that is, the time step.

[0079] Step 2: Set the motion combination relationship of the polishing head and the dresser, and set the modification flag = false (not modified). The combination relationship includes the respective frequency, amplitude, start and end position, motion waveform and motion duration, etc. and can be freely set and selected by the operator.

[0080] Step 3: Set the motion start time T0, and calculate the motion end time TE according to the motion combination relationship of the polishing head and the dresser. The motion end time is obtained based on the motion start time T0 and the motion duration.

[0081] Step 4: Set the current calculation step as i, and let i = 0.

[0082] Step 5: Let Ti = T0 + i × Δt, and judge whether Ti is less than TE. If Ti is less than TE, it indicates that the motion is not ended and the operation is not completed, and then step 6 is entered; if Ti is not less than TE, it indicates that the motion is ended and the entire motion process calculation is completed, and then step 12 is entered.

[0083] Step 6: According to the motion combination relationship of the polishing head and the dresser, the polishing head position STi at the time Ti is calculated, the dresser position SXi at the time Ti is calculated, and the position relationship of STi and SXi on the polishing pad is calculated.

[0084] Step 7: Judge whether there is a possibility of collision; for example, according to the motion combination relationship of the polishing head and the dresser, the positions of the respective centers are calculated; and then according to the radii of the polishing head and the dresser, it is judged whether the polishing head and the dresser interfere at this position, and if there is interference, there is a possibility of collision.

[0085] Further, if there is a possibility of collision, step 8 is entered; if there is no possibility of collision, the current calculation step i is set as i + 1, and step 5 is entered.

[0086] Step 8: Make a reminder "frequency or start and end position needs to be adjusted", if the selection is to continue, step 9 is entered, and if the selection is not to continue, step 11 is entered.

[0087] Step 9: judging whether the frequency of the polishing head and the conditioner is same, if not, adjusting the frequency of the polishing head to be same as the conditioner, changing flag = true (changed), returning to step 3; if same, entering step 10.

[0088] Step 10: prompting the operator to re-input the start-stop position of the polishing head, changing flag = true (changed), entering step 3.

[0089] Step 11: not saving, ending.

[0090] Step 12: judging the changing flag, if false, indicating that no change is made, saving, ending; if true, entering step 13.

[0091] Step 13: inquiring whether to save the new motion combination relationship, if no, directly ending, if yes, saving and then ending.

[0092] The embodiment of the application no longer depends on human experience, and reduces the probability of risk occurrence; when selecting the motion combination relationship, the algorithm is relied on to automatically adjust the motion combination relationship in advance; and the situation that whether collision occurs can be determined only in the process of previous use is avoided.

[0093] It should be understood that the size of the serial number of each step in the above embodiment does not mean the order of execution, and the execution order of each process should be determined according to its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the application.

[0094] The following is a device embodiment of the application, and for details not described in detail, reference can be made to the corresponding method embodiments described above.

[0095] Figure 3 A structure schematic diagram of a chemical mechanical polishing control device provided by the embodiment of the application is shown, only parts related to the embodiment of the application are shown for the convenience of description, and the details are described as follows:

[0096] As shown in the figure, a chemical mechanical polishing control device 3 is applied to control a chemical mechanical polishing equipment; the chemical mechanical polishing equipment includes a polishing head, a conditioner and a polishing pad; the device includes:

[0097] An acquisition module 31 is configured to acquire motion parameters of the polishing head and the conditioner respectively; the motion parameters include initial positions, motion modes and motion time lengths; the motion mode includes motion frequency, motion amplitude and motion waveform; the motion ranges of the polishing head and the conditioner partially overlap;

[0098] A judging module 32 is configured to judge whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes;

[0099] The frequency adjustment module 33 is configured to set the motion frequencies of the polishing head and the conditioner to be the same if the collision occurs and the motion frequencies are different.

[0100] The amplitude adjustment module 34 is configured to modify the initial positions or motion amplitudes of the polishing head and the conditioner after the motion frequencies are set to be the same until the collision does not occur in the motion time range, to obtain the modified motion parameters.

[0101] The control module 35 is configured to control the conditioner to modify the polishing pad and control the polishing head to polish according to the modified motion parameters after the modified motion parameters are obtained, to realize the chemical mechanical polishing control.

[0102] The embodiment of the present application judges whether the collision occurs based on the motion parameters of the polishing head and the conditioner in the parameter setting stage before the actual chemical mechanical polishing is performed. When the collision occurs, the motion frequency and the initial position are automatically adjusted to obtain the modified motion parameters that can avoid the collision. The chemical mechanical polishing control is performed based on the modified motion parameters. Therefore, the collision is predicted in advance and the motion parameters are adjusted, the reliability is improved, or the real-time collision monitoring is avoided and the hardware cost is reduced, and the collision between the polishing head and the conditioner is effectively avoided.

[0103] Figure 4 is a schematic diagram of an electronic device provided by the embodiment of the present application. As shown in Figure 4 The electronic device 4 of the embodiment includes a processor 40 and a memory 41. The memory 41 stores a computer program 42. The processor 40 implements the steps in each of the method embodiments described above when executing the computer program 42. Alternatively, the processor 40 implements the functions of each module / unit in each of the device embodiments described above when executing the computer program 42.

[0104] For example, the computer program 42 can be divided into one or more modules / units, which are stored in the memory 41 and executed by the processor 40 to complete the present application. The one or more modules / units can be a series of computer program instruction segments that can complete a specific function, which are used to describe the execution process of the computer program 42 in the electronic device 4.

[0105] The electronic device 4 can include, but is not limited to, the processor 40 and the memory 41. Those skilled in the art can understand, Figure 4 Figure 4 is only an example of the electronic device 4 and does not constitute a limitation on the electronic device 4, and can include more or fewer components than those shown, or combine certain components, or different components, for example, the electronic device 4 can also include an input / output device, a network access device, a bus, etc.

[0106] The processor 40 can be a central processing unit (CPU), and can also be other general-purpose processors, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or the like. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor.

[0107] The memory 41 can be an internal storage unit of the electronic device 4, such as a hard disk or a memory of the electronic device 4. The memory 41 can also be an external storage device of the electronic device 4, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, or the like equipped on the electronic device 4. Further, the memory 41 can include both the internal storage unit and the external storage device of the electronic device 4. The memory 41 is used to store the computer program 42 and other programs and data required by the electronic device 4. The memory 41 can also be used to temporarily store data that has been output or will be output.

[0108] For the convenience and brevity of description, only the division of the above functional modules / units is exemplified, and in actual application, the above functions can be completed by different functional modules / units according to needs. The above modules / units can be realized in the form of hardware, software, or a combination of hardware and software.

[0109] The embodiment of the present application further provides a computer readable storage medium, which stores a computer program. When the computer program is executed by a processor, the method in each method embodiment described above is implemented.

[0110] The embodiment of the present application further provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the method in each method embodiment described above is implemented.

[0111] The computer program includes computer program code, which can be in the form of source code, object code, executable files or some intermediate forms, etc. The computer readable medium can include any entity or device capable of carrying computer program code, recording medium, U disk, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal and software distribution medium, etc.

[0112] In the above embodiments, the description of each embodiment has its own focus, and the parts not described or recorded in a certain embodiment can be referred to the relevant description of other embodiments. If there is no special description and logical conflict, the terms and / or descriptions of different embodiments are consistent and can be mutually referred to, and the technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0113] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A chemical mechanical polishing control method, characterized by, The application is applied to control a chemical mechanical polishing device; the chemical mechanical polishing device comprises a polishing head, a conditioner and a polishing pad; the method comprises: acquiring motion parameters of the polishing head and the conditioner respectively; the motion parameters comprise initial positions, motion modes and motion time lengths; the motion mode comprises a motion frequency, a motion amplitude and a motion waveform; the motion ranges of the polishing head and the conditioner partially overlap; judging whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes; if the collision occurs and the motion frequencies are different, setting the motion frequencies of the polishing head and the conditioner as the same; after the motion frequencies are set as the same, modifying the initial positions or the motion amplitudes of the polishing head and the conditioner until the polishing head and the conditioner do not collide within the motion time length, to obtain modified motion parameters; after the modified motion parameters are obtained, controlling the conditioner to modify the polishing pad and controlling the polishing head to polish according to the modified motion parameters, to realize chemical mechanical polishing control.

2. The chemical mechanical polishing control method according to claim 1, wherein judging whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes comprises: obtaining positions of the polishing head and the conditioner at a next time based on the initial positions and the motion modes at an initial time; judging whether a current time is within the motion time length based on the initial time, the current time and the motion time length; if the current time is within the motion time length, obtaining the position of the polishing head at the current time based on the position of the polishing head at a previous time and the motion mode; obtaining the position of the conditioner at the current time based on the position of the conditioner at the previous time and the motion mode; judging whether the polishing head and the conditioner collide according to the positions of the polishing head and the conditioner at the current time; if the polishing head and the conditioner do not collide, determining the positions at a next time based on the positions of the polishing head and the conditioner at the current time and judging whether the collision occurs until the motion time length is reached.

3. The chemical mechanical polishing control method according to claim 2, wherein judging whether the polishing head and the conditioner collide according to the positions of the polishing head and the conditioner at the current time comprises: determining an edge range of the polishing head according to the position of the polishing head at the current time and a radius of the polishing head; determining an edge range of the conditioner according to the position of the conditioner at the current time and a radius of the conditioner; judging whether the polishing head and the conditioner collide based on the edge ranges of the polishing head and the conditioner.

4. The chemical mechanical polishing control method of claim 1, wherein after judging whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes, the method further comprises: if the collision does not occur, controlling the conditioner to modify the polishing pad and controlling the polishing head to polish according to the current motion parameters, to realize chemical mechanical polishing control.

5. The chemical mechanical polishing control method of claim 1, wherein the motion waveform comprises a sine wave, a cosine wave, a step wave or a square wave.

6. The chemical mechanical polishing control method of claim 1, wherein after judging whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes, the method further comprises: if the collision occurs within the motion time length, sending a prompt signal to prompt that the frequency, the initial position or the motion amplitude needs to be adjusted.

7. A chemical mechanical polishing control device, characterized in that, The application is applied to control a chemical mechanical polishing device; the chemical mechanical polishing device comprises a polishing head, a conditioner and a polishing pad; the device comprises: The acquisition module is configured to acquire motion parameters of the polishing head and the conditioner respectively, wherein the motion parameters include initial positions, motion modes and motion time lengths, the motion mode includes a motion frequency, a motion amplitude and a motion waveform, and the motion ranges of the polishing head and the conditioner partially overlap. The judgment module is configured to judge whether the polishing head and the conditioner collide within the motion time length based on the initial positions and the motion modes. The frequency adjustment module is configured to set the motion frequencies of the polishing head and the conditioner to be the same if the collision occurs and the motion frequencies are different. The amplitude adjustment module is configured to modify the initial positions or the motion amplitudes of the polishing head and the conditioner after the motion frequencies are set to be the same until the polishing head and the conditioner do not collide within the motion time length, so as to obtain corrected motion parameters. The control module is configured to control the conditioner to correct the polishing pad and control the polishing head to polish according to the corrected motion parameters after the corrected motion parameters are obtained, so as to realize chemical mechanical polishing control.

8. An electronic device, comprising: The computer readable storage medium stores a computer program, and the computer program is executed by the processor to realize the chemical mechanical polishing control method in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, The computer readable storage medium stores a computer program, and the computer program is executed by the processor to realize the chemical mechanical polishing control method in any one of claims 1 to 6.

10. A computer program product, characterised in that, The computer program is executed by the processor to realize the chemical mechanical polishing control method in any one of claims 1 to 6.

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