Electroplating method, electroplating device and electroplating equipment for TGV glass wafer

Abstract

The invention discloses an electroplating method, an electroplating device and electroplating equipment for a TGV glass wafer. The electroplating method comprises the steps that adjustable variable frequency pumps located on the two sides of a glass wafer are started, low-frequency output is achieved on one side, high-frequency output is achieved on the other side, after first preset time is continued, high-frequency output is achieved on one side, low-frequency output is achieved on the other side, and the process is circulated for preset times; and the instant temperature of the electroplating liquid in the electroplating liquid cavity is obtained, the instant temperature is compared with the preset temperature, and the temperature adjusting device is controlled to adjust the instant temperature of the electroplating liquid in the electroplating liquid cavity to the allowance range of the preset temperature according to the comparison result. According to the invention, through pulse-type frequency-adjustable pumped electroplating liquid double-side independent circulation control, optimal control of TGV coating thickness and quality is realized; and the problem that the TGV through hole electroplating process is invalid or a plating layer is uneven due to the fact that the performance of a glass material is influenced by the temperature of the electroplating liquid is solved by controlling the instant temperature of the electroplating liquid entering the two sides.

Description

TECHNICAL FIELD

[0001] The present application relates to a plating method, a plating device and a plating equipment for TGV glass wafers. BACKGROUND

[0002] At present, advanced three-dimensional packaging technology of integrated circuits gradually becomes an important means to realize high integration of electronic products, miniaturization and multi-functionality. The current packaging technology such as flexible substrate, TSV (Through Silicon Via) adapter plate technology and TGV (Through Glass Via) adapter plate technology are all hot research directions of vertical 3D interconnection. The high aspect ratio TGV of the latest technology generation has an aspect ratio of about 10:1. As shown in Figure 1 and Figure 2 The structure diagram of the glass wafer with high aspect ratio at different angles is shown. Since double-sided plating control is needed to eliminate the non-uniform plating film or the plating film formed too fast caused by single-sided plating, resulting in the plugging of the via to form invalid products, the via of the TGV is designed in a spindle shape, which is symmetrical on both sides. The cross-sectional area of the via near the surface of the glass wafer has a shape structure that gradually changes from the maximum aperture of the glass wafer surface to a curved inwardly shrinking aperture until the equal-diameter via. This is to reduce the turbulence caused by the change of liquid Reynolds number of the double-sided plating liquid at the via aperture of the TGV.

[0003] The glass material has no free-moving electric charge, excellent dielectric properties, and a thermal expansion coefficient close to silicon. The problem of poor insulation of TSV silicon vias can be solved by using glass instead of silicon material in TGV glass vias, which is the most ideal three-dimensional integration solution at present.

[0004] TGV glass via technology is considered as the key technology of the next generation of three-dimensional integration. The core of the technology is the deep hole filling process and device.

[0005] At present, TGV needs to fill metal into the via, and then use CMP (chemical mechanical polishing technology) to remove the metal layer on the surface of the via to achieve the planarization of the glass wafer surface after filling the via.

[0006] The existing plating equipment has the following problems:

[0007] 1. The plating film forming rate cannot be accurately controlled, so when plating the micron-level glass wafer via, it is very likely that the via will be plugged and invalid due to the too fast plating film forming rate, which cannot meet the production demand.

[0008] 2. When the existing technology equipment is used for plating the micron-level glass wafer via, the plating liquid enters from one side of the via, causing the problem of uneven thickness of the plating layer on the inner surface of the micron-level via, poor device stability and even failure of the parts during operation.

[0009] 3. Furthermore, the performance of glass materials is greatly affected by temperature; excessively high or low temperatures can cause TGV failure or uneven electroplating. Current electroplating equipment does not yet offer a comprehensive solution to this problem. Summary of the Invention

[0010] The technical problem to be solved by the present invention is to overcome the defects in the prior art, such as the inability to accurately control the electroplating film forming rate, uneven thickness of the electroplating layer on the inner surface of the through hole, and the tendency of excessively high or low temperatures to cause TGV failure or uneven electroplating. The present invention provides an electroplating method, electroplating apparatus and electroplating equipment for TGV glass wafers.

[0011] The present invention solves the above-mentioned technical problems through the following technical solution:

[0012] An electroplating method for TGV glass wafers, characterized by comprising the following steps:

[0013] Step S1: Fix the glass wafer in the wafer clamping position and keep it stationary;

[0014] Step S2: Activate the adjustable frequency pumps of the independent circulation control systems located on both sides of the glass wafer, so that the electroplating solution flows from the storage tank through the temperature regulation device of the temperature control system to the plating chamber, and then is sprayed out through the small holes on the baffle plate to seep through the through-holes of the glass wafer; the independent circulation control systems on both sides are respectively the first independent circulation control system and the second independent circulation control system. Within a first preset time, the adjustable frequency pump of the first independent circulation control system is adjusted to low frequency output, and the adjustable frequency pump of the second independent circulation control system is adjusted to high frequency output; within a second preset time after the first preset time, the adjustable frequency pump of the first independent circulation control system is switched to high frequency output, and the adjustable frequency pump of the second independent circulation control system is switched to low frequency output, and this process is repeated a preset number of times;

[0015] Step S2': Obtain the instantaneous temperature of the electroplating solution in the plating chamber, compare the instantaneous temperature with the preset temperature, determine whether the instantaneous temperature is within the tolerance range of the preset temperature, and control the temperature regulating device to adjust the instantaneous temperature of the electroplating solution in the plating chamber to the tolerance range of the preset temperature according to the determination result.

[0016] Step S2 and step S2' are performed simultaneously, or step S2 is performed before or after step S2'.

[0017] In the technical solution, through the pulse frequency-adjustable pump into the electroplating liquid double-side independent circulation control, the control of the double-side electroplating liquid pump liquid rate and the stable circulation of the electroplating liquid during the through-hole electroplating of the glass wafer are realized, the metal ion diffusion and concentration distribution are effectively improved, and finally the optimization control of the through-hole plating film thickness and quality of the glass wafer is realized; and through the instant temperature control of the liquid on both sides of the electroplating liquid, the influence of the electroplating liquid temperature on the performance of the glass material is avoided, and the problem that the high or low temperature causes the failure of the TGV through-hole electroplating process or the uneven plating layer is solved; meanwhile, the temperature control system also has the function of controlling and adjusting the electroplating film forming speed.

[0018] Preferably, in step S2', the electroplating method further comprises:

[0019] Step S21', acquiring the instant temperature of the electroplating liquid in the plating liquid chamber;

[0020] Step S22', comparing the instant temperature with the preset temperature to determine whether the instant temperature is within the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to be in standby state; if no, executing step S23';

[0021] Step S23', determining whether the instant temperature is lower than the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to heat the flowing electroplating liquid for a third preset time, and after the third preset time, executing step S21' again; if no, executing step S24';

[0022] Step S24', controlling the temperature adjusting device to cool the flowing electroplating liquid for a fourth preset time, and after the fourth preset time, executing step S21' again.

[0023] In the technical solution, through the above setting, a method step of specifically controlling the temperature adjusting device to adjust the instant temperature of the electroplating liquid in the plating liquid chamber to the tolerance range of the preset temperature is provided.

[0024] Preferably, before step S2', the electroplating method further comprises: reducing the electroplating liquid temperature below the preset temperature; and / or,

[0025] Before step S2', the electroplating method further comprises:

[0026] The aspect ratio and diameter of the glass wafer via hole to be electroplated and the pre-plating film thickness of three different positions are input into the segmented adaptive variable frequency electroplating model to output the first preset time, the first current density within the first preset time, and the second preset time and the second current density within the second preset time from the segmented adaptive variable frequency electroplating model according to the pre-plating film thickness; wherein the segmented adaptive variable frequency electroplating model measures the plating film thickness by taking out the glass wafer after a certain time under different current densities and using the offline detection method, and increases the corresponding curve values of thickness and time under different current densities by the method of extrapolation and interpolation.

[0027] In the technical solution, the first preset time, the first current density within the first preset time, and the second preset time and the second current density within the second preset time can be quickly obtained according to the input aspect ratio and diameter of the glass wafer via hole and the pre-plating film thickness, so as to effectively control the actual plating film thickness.

[0028] Preferably, in the step S2', the electroplating method further comprises:

[0029] The movable device connected with the flow uniformizing plate is started at the same time as the adjustable variable frequency pump of the independent circulation control system located on both sides of the glass wafer is started, the movable device drives the flow uniformizing plate to move towards the glass wafer to a preset distance, then the movable device drives the flow uniformizing plate to make continuous reciprocating motion relative to the glass wafer in the vertical and / or horizontal direction, and the electroplating solution ejected from the flow uniformizing plate penetrates through the glass wafer via hole after being buffered by the flow uniformizing plate.

[0030] In the technical solution, by controlling the movable device to drive the flow uniformizing plate to make continuous reciprocating motion relative to the glass wafer in the vertical and / or horizontal direction, the rate and time interval of the up-down and left-right movement of the flow uniformizing plate can be controlled, the metal ion diffusion and concentration distribution are improved, the last adjustment of the electrochemical reaction is constituted, the uniformity of metal electroplating deposition is optimized, the problems of electroplating blockage or voids are effectively avoided, and the internal electroplating quality of the glass wafer via hole is improved.

[0031] An electroplating device for TGV glass wafers, characterized in that the electroplating device adopts the electroplating method for TGV glass wafers as described above, and the electroplating device comprises an electroplating tank, a wafer clamp, and the independent circulation control systems respectively arranged on both sides of the wafer clamp.

[0032] The wafer clamp is arranged in the electroplating tank for clamping the glass wafer, and the wafer clamp comprises the wafer clamping position.

[0033] The independent circulation control system comprises the temperature control system, the flow disturbing mechanism, the flow uniformizing mechanism, the moving device and the electroplating solution circulation mechanism.

[0034] The electroplating solution circulation mechanism is connected to the flow disturbing mechanism for inputting electroplating solution to the flow disturbing mechanism.

[0035] The temperature control system is used for controlling the temperature of the electroplating solution.

[0036] The flow disturbing mechanism is arranged opposite to the wafer clamping position for outputting electroplating solution to the wafer clamping position.

[0037] The flow uniformizing mechanism is arranged between the wafer clamping position and the flow disturbing mechanism.

[0038] The moving device is connected to the flow uniformizing mechanism for controlling the movement of the flow uniformizing mechanism relative to the wafer clamping position in the vertical and / or horizontal direction.

[0039] The electroplating solution circulation mechanism comprises the adjustable variable frequency pump for controlling the electroplating solution to be pumped into the flow disturbing mechanism in a pulsating manner, and the electroplating solution is sprayed through the flow disturbing mechanism and then flows to the wafer clamping position through the flow uniformizing mechanism.

[0040] In the technical solution, the specific structure of the electroplating device is arranged, the pulsating frequency-adjustable double-side liquid inlet circulation independent control system is arranged, the problem of uneven film thickness of the glass wafer through-hole from the inner wall close to the liquid inlet and the inner wall far from the liquid inlet is improved, the electroplating solution is sprayed through the flow disturbing mechanism to generate the electroplating solution jet spraying effect, the moving device drives the flow uniformizing mechanism, the concentration and diffusion rate of metal ions are controlled and combined to realize the best control of the film thickness and rate uniformization of the glass wafer through-hole, and the uniformity of the micron-level glass wafer through-hole inner surface electroplating layer is improved.

[0041] Preferably, the flow disturbing mechanism comprises a flow disturbing plate and an electroplating solution chamber, the flow disturbing plate is arranged on one side of the electroplating solution chamber close to the wafer clamping position, and a plurality of small holes are arranged on the flow disturbing plate.

[0042] The flow uniformizing mechanism comprises a flow uniformizing plate and a support plate, the support plate is used for fixing and positioning the flow uniformizing plate between the flow disturbing plate and the wafer clamping position, the moving device is connected to the support plate, and the moving device drives the flow uniformizing plate to move through the support plate.

[0043] In the technical solution, the orifice-equipped spoiler enables the electroplating solution in the chamber to be accelerated and sprayed to the surface of the glass wafer in the wafer clamping position, which helps the fluid in the micron-level through-hole of the glass wafer to move, thereby improving the uniformity of the electroplating layer on the inner surface of the micron-level through-hole of the glass wafer. The moving device can displace the support plate in the vertical and / or horizontal direction, thereby driving the spoiler to make continuous reciprocating motion in the vertical and / or horizontal direction relative to the glass wafer clamped in the wafer clamping position, so as to better control the diffusion of metal ions in the electroplating solution near the through-hole of the glass wafer, thereby enabling the electroplating solution in the through-hole of the glass wafer to be fully exchanged and the thickness of the electroplating layer to be uniform, and also preventing the electroplating solution from being too fast to rush and break the glass wafer.

[0044] Preferably, the uniform flow plate is provided with multiple rings of uniform flow holes in the thickness direction, the uniform flow holes are arc-shaped holes, and the multiple rings of uniform flow holes are arranged outward from the center in the radial direction of the uniform flow plate. Each ring of uniform flow holes includes multiple uniform flow holes that are arranged in a circle around the center of the uniform flow plate and are spaced apart.

[0045] In the technical solution, by providing multiple rings of uniform flow holes in the uniform flow plate, the resistance encountered by the uniform flow plate during movement can be smaller, thereby helping to eliminate the fluctuations on the surface of the electroplating solution and avoiding the generation of bubbles on the to-be-plated surface of the sheet-shaped glass wafer. The multiple arc-shaped uniform flow holes in each ring are arranged in a circle around the center of the uniform flow plate and are spaced apart, which is conducive to increasing the uniformity of the electroplating solution.

[0046] Preferably, the electroplating tank and the spoiler mechanism are connected through a pump-in pipeline, the temperature control system includes the temperature adjusting device and a temperature sensing element, the temperature adjusting device is arranged on the pump-in pipeline, the temperature sensing element is arranged in the spoiler mechanism to detect the temperature of the electroplating solution, and the temperature adjusting device and the temperature sensing element are electrically connected with a controller.

[0047] The temperature adjusting device includes a cooling module and a heating module, and the cooling module and the heating module are arranged in sequence on the pump-in pipeline.

[0048] In the technical solution, by the above arrangement, a specific arrangement of the temperature control system is provided, independent temperature control of the electroplating solution pumped by the independent circulation control systems on each side is formed, and the basic conditions of the electroplating chemical reaction are adjusted to improve the electroplating quality.

[0049] Preferably, the wafer clamp comprises a plurality of wafer clamping positions arranged along the length direction thereof; each of the wafer clamping positions is provided with one of the independent circulation control systems on both sides thereof; the uniform flow mechanisms included in the independent circulation control systems on the same side share a support plate and the moving device connected to the support plate; the support plate comprises a plurality of uniform flow plate mounting positions arranged along the length direction thereof, and the uniform flow plate mounting positions are arranged in one-to-one correspondence with the wafer clamping positions.

[0050] In the technical solution, a plurality of wafer clamping positions and corresponding structures are introduced to meet the requirement of electroplating a plurality of glass wafers at the same time. Each plating liquid chamber is provided with an independent circulation control system, so that each electroplating unit can independently control the pump liquid frequency, temperature and other process parameters, thereby providing higher production efficiency and process flexibility, ensuring the uniformity of electroplating of each glass wafer, optimizing the overall production process, and improving the electroplating efficiency and product quality.

[0051] An electroplating device for TGV glass wafers, characterized in that it comprises the electroplating device for TGV glass wafers as described above.

[0052] The positive progress effect of the present application is that:

[0053] The electroplating method for TGV glass wafers of the present application realizes the control of the pump liquid rate of the double-sided electroplating liquid and the stable circulation of the electroplating liquid by the pulsating frequency-adjustable pump-in electroplating liquid double-sided independent circulation control, effectively improves the metal ion diffusion and concentration distribution, and finally realizes the optimized control of the glass wafer through-hole plating film thickness and quality; and by controlling the temperature of the liquid of the two-sided liquid inlet electroplating liquid in real time, the influence of the electroplating liquid temperature on the performance of the glass material is avoided, and the problem that high or low temperature can cause the TGV through-hole electroplating process to fail or the plated layer to be uneven is solved; the temperature control system also has the function of controlling and adjusting the electroplating film forming speed.

[0054] The electroplating device and electroplating equipment for TGV glass wafers of the present application improve the problem of uneven plating film thickness on the inner wall of the glass wafer through-hole from the liquid inlet and the liquid outlet by the pulsating frequency-adjustable double-sided liquid inlet circulation independent control system, the electroplating liquid generates a jet spray effect through the turbulence mechanism, and the moving device drives the turbulence mechanism to realize the optimal control and combination of the plating film thickness and rate uniformity of the glass wafer through-hole in terms of the concentration and diffusion rate of metal ions, thereby improving the uniformity of the micron-level glass wafer through-hole inner surface electroplating layer. BRIEF DESCRIPTION OF DRAWINGS

[0055] Figure 1 It is a top view structural schematic diagram of the glass wafer to be electroplated in the prior art.

[0056] Figure 2 A cross-sectional view of a glass wafer to be plated in the prior art.

[0057] Figure 3 A schematic view of a plating device for TGV glass wafers according to a preferred embodiment of the present application.

[0058] Figure 4 A schematic view of a plating device for TGV glass wafers according to a preferred embodiment of the present application.

[0059] Figure 5 A schematic view of a flow uniformizer according to a preferred embodiment of the present application.

[0060] Figure 6 A schematic view of a flow disturbing mechanism according to a preferred embodiment of the present application.

[0061] Figure 7 A schematic view of different aperture schemes of a flow disturbing mechanism according to a preferred embodiment of the present application.

[0062] Figure 8 A schematic view of a film forming process on the inner wall of a through hole according to a preferred embodiment of the present application.

[0063] Figure 9 A flow chart of a plating method for TGV glass wafers according to a preferred embodiment of the present application.

[0064] Legend of reference numerals

[0065] Plating device 1

[0066] Plating bath 11

[0067] Overflow transfer tank 84

[0068] Wafer clamp 20

[0069] Wafer clamping position 21

[0070] Independent circulation control system 30

[0071] First independent circulation control system 31

[0072] Second independent circulation control system 32

[0073] Temperature control system 40

[0074] Temperature regulating device 41

[0075] Cooling module 411

[0076] Heating module 412

[0077] Temperature sensing element 42

[0078] turbulence mechanism 50

[0079] spoiler 51

[0080] plating solution chamber 52

[0081] flow uniformization mechanism 60

[0082] flow uniformization plate 61

[0083] flow uniformization hole 611

[0084] support plate 62

[0085] moving device 70

[0086] plating solution circulation mechanism 80

[0087] adjustable variable frequency pump 81

[0088] reservoir 82

[0089] pump-in line 83

[0090] glass wafer 4

[0091] through glass via (TGV) hole 401 DETAILED DESCRIPTION

[0092] The present application will be further described by way of examples without limiting the present application to the examples.

[0093] The present application provides a plating method, a plating device 1 and a plating apparatus for TGV glass wafer 4, which is particularly suitable for glass wafer 4 with a thickness ranging from 300um to 700um and a TGV aspect ratio ranging from 1:10 to 1:4, such as the glass wafer 4 shown in Figure 1 and Figure 2 having a through glass via (TGV) hole thereon.

[0094] As shown in Figures 3-8 , the plating device 1 for TGV glass wafer 4 provided by the present application comprises a plating tank 11, a wafer clamp 20 and independent circulation control systems 30 arranged on both sides of the wafer clamp 20 respectively. The two independent circulation control systems 30 are respectively a first independent circulation control system 31 located on the left side of the wafer clamp 20 and a second independent circulation control system 32 located on the right side of the wafer clamp 20. Figure 1 Figure 1

[0095] ​​The electroplating tank 11 is used to hold the electroplating solution to provide the environment required for the electroplating of the glass wafer 4. The wafer holder 20 is arranged in the electroplating tank 11 for holding the glass wafer 4, and the wafer holder 20 includes a wafer holding position 21. During electroplating, the wafer holder 20 fixes the glass wafer 4 to the wafer holding position 21.

[0096] The first and second independent circulation control systems 31 and 32 each include a temperature control system 40, a turbulence mechanism 50, a uniform flow mechanism 60, a moving device 70, and an electroplating solution circulation mechanism 80. The electroplating solution circulation mechanism 80 is connected to the turbulence mechanism 50 for inputting the electroplating solution to the turbulence mechanism 50. The turbulence mechanism 50 is arranged opposite the wafer holding position 21 for outputting the electroplating solution toward the wafer holding position 21 (i.e., toward the glass wafer 4). The uniform flow mechanism 60 is arranged between the wafer holding position 21 and the turbulence mechanism 50 for facilitating the diffusion of metal ions in the electroplating solution and buffering the electroplating solution output by the turbulence mechanism 50. The uniform flow mechanism 60 is connected to the moving device 70, i.e., the uniform flow mechanism 60 can be controlled to move in the vertical and / or horizontal directions relative to the wafer holding position 21 by the moving device 70, so as to adjust the relative position of the uniform flow mechanism 60 and the wafer holding position 21. The electroplating solution circulation mechanism 80 includes a storage tank 82 and an adjustable variable frequency pump 81. The adjustable variable frequency pump 81 controls the electroplating solution to be pumped to the turbulence mechanism 50 in a pulsating manner. The electroplating solution is sprayed by the turbulence mechanism 50 and then buffered by the uniform flow mechanism 60 before flowing to the glass wafer 4 on the wafer holding position 21.

[0097] In this way, by arranging the specific structure of the electroplating device 1, by the pulsating frequency-adjustable double-side liquid inlet circulation independent control system, the problem of uneven film thickness on the inner walls of the glass wafer through-hole 401 close to the liquid inlet and far from the liquid inlet is improved. The electroplating solution generates a jet spraying effect by the turbulence mechanism 50, and then the moving device 70 drives the uniform flow mechanism 60 to achieve the best control and combination of the concentration and diffusion rate of metal ions for the uniformization of the film thickness and rate of the glass wafer through-hole 401, which constitutes a multi-element control to improve the uniformity of the electroplated layer on the inner surface of the micron-level glass wafer through-hole 401.

[0098] The turbulence mechanism 50 includes a turbulence plate 51 and a plating solution chamber 52. The plating solution chamber 52 is provided with an anode assembly. The turbulence plate 51 is arranged on the side of the plating solution chamber 52 close to the wafer holding position 21. A plurality of small holes are formed in the turbulence plate 51 for accelerating the spraying of the electroplating solution to the surface of the glass wafer 4 located in the wafer holding position 21, thereby facilitating the movement of the fluid in the glass wafer through-hole 401. There are various schemes for the openings of the turbulence plate 51, such as Figure 7As shown, the small holes can have different diameters, or opening areas, equal or unequal openings (e.g. in a tapered manner) through the small holes. The different jetting effects of the electroplating solution caused by the size and distribution of the openings of the spoiler 51 correspond to different high aspect ratios of the glass wafer through holes 401 and different densities of the glass wafer through holes 401, thereby improving the uniformity of the electroplating layer on the inner surface of the micron-level glass wafer through holes 401.

[0099] The flow uniformizing mechanism 60 includes a flow uniformizing plate 61 and a support plate 62 for fixing and positioning the flow uniformizing plate 61 between the spoiler 51 and the wafer clamping position 21, which is used to buffer the electroplating solution ejected from the spoiler 51. The moving device 70 is connected to the support plate 62, and the moving device 70 drives the flow uniformizing plate 61 to move by the support plate 62, i.e. the moving device 70 can displace the support plate 62 in the vertical and / or horizontal direction, thereby driving the flow uniformizing plate 61 to make continuous reciprocating motion in the vertical and / or horizontal direction relative to the glass wafer 4 clamped on the wafer clamping position 21, thereby better controlling the diffusion of metal ions in the electroplating solution near the glass wafer through holes 401, so that the electroplating solution in the through holes of the glass wafer 4 is fully exchanged, the thickness of the electroplating layer is uniform, and at the same time, it also prevents the glass wafer 4 from being washed away by the too fast flow of the electroplating solution.

[0100] The specific structure of the flow uniformizing plate 61 is shown in Figure 5 As shown, the flow uniformizing plate 61 is provided with multiple rings of flow uniformizing holes 611 in the thickness direction, the flow uniformizing holes 611 are arc-shaped holes, and the multiple rings of flow uniformizing holes 611 are arranged from the center to the outside along the radial direction of the flow uniformizing plate 61. Each ring of flow uniformizing holes 611 includes multiple flow uniformizing holes 611 arranged in a circumferential direction around the center of the flow uniformizing plate 61 and spaced apart. In this way, by providing multiple rings of flow uniformizing holes 611 on the flow uniformizing plate 61, the resistance encountered by the flow uniformizing plate 61 during movement is smaller, thereby helping to eliminate the fluctuations generated on the surface of the electroplating solution and avoiding the generation of bubbles on the to-be-plated surface of the glass wafer 4. The multiple arc-shaped flow uniformizing holes 611 in each ring are arranged in a circumferential direction around the center of the flow uniformizing plate 61 and spaced apart, which is beneficial to increasing the uniformity of the electroplating solution. However, it is not limited thereto, and in other embodiments, the flow uniformizing holes 611 can also be in other forms of arrangement, such as grid holes, etc.

[0101] The shape of the flow uniformizing plate 61 is circular. The circular flow uniformizing plate 61 encounters less resistance when rotating in the electroplating solution, thereby helping to eliminate the fluctuations generated on the surface of the electroplating solution and avoiding the generation of bubbles on the to-be-plated surface of the glass wafer 4.

[0102] As described above, the electroplating solution circulating mechanism 80 comprises a storage tank 82 and an adjustable variable frequency pump 81; wherein the storage tank 82 stores the electroplating solution required for electroplating, and the storage tank 82 is connected to the plating solution chamber 52 of the turbulence mechanism 50 through a liquid inlet device; the adjustable variable frequency pump 81 is connected to the storage tank 82, and is used to control the pump liquid frequency of the storage tank 82 to the turbulence mechanism 50; the higher the frequency of the adjustable variable frequency pump 81, the higher the efficiency of the electroplating solution ejected from the turbulence mechanism 50, the more sufficient the exchange of metal ions in the electroplating solution, and the faster the film forming on the inner wall of the through hole on the side of the glass wafer 4.

[0103] When the electroplating device 1 for TGV glass wafer 4 provided by the embodiment is working, the wafer clamp 20 fixes the glass wafer 4 in the wafer clamping position 21 and keeps it stationary, and after the two adjustable variable frequency pumps 81 are started, the electroplating solution is ejected from the small holes on the turbulence plate 51 at high speed through the plating solution chamber 52 from the storage tank 82; at the same time, the moving device 70 connected to the flow uniformization mechanism 60 is started, and the moving device 70 drives the flow uniformization plate 61 to move towards the glass wafer 4 to a distance of 2mm-10mm between the glass wafers 4, and then during the electroplating process, the moving device 70 drives the flow uniformization plate 61 to make continuous forward and backward reciprocating motion, and the frequency and amplitude of the reciprocating motion can be changed in real time; the electroplating solution ejected from the turbulence plate 51 finally penetrates through the glass wafer through hole 401 after being buffered by the flow uniformization plate 61.

[0104] In the foregoing process, the movement of the flow uniformization plate 61 makes the liquid in the through hole of the glass wafer 4 fully exchange, thereby greatly improving the uniformity of electroplating and making the hole filling without gaps or defects; and since the moving frequency and amplitude of the moving device 70 can be changed in real time, the rate and time interval of the up-down and left-right movement of the flow uniformization plate 61 can be controlled, thereby better controlling the diffusion and concentration distribution of metal ions in the electroplating solution near the TGV of the glass wafer 4, adjusting or optimizing the last stage of the electrochemical reaction process, and ensuring to obtain a more uniform metal deposition layer.

[0105] Further, as to the independent circulating control system 30 arranged on both sides of the wafer clamp 20, as shown in the figure, when the frequency of the adjustable variable frequency pump 81 contained in the first independent circulating control system 31 on the left side is higher than the frequency of the adjustable variable frequency pump 81 contained in the second independent circulating control system 32 on the right side, the efficiency of the electroplating solution ejected from the turbulence mechanism 50 of the first independent circulating control system 31 on the left side is higher, and the film forming speed on the left side of the inner wall of the glass wafer through hole 401 will obviously exceed that on the right side. Therefore, after maintaining the left side high frequency and the right side low frequency for a period of time, the left side low frequency and the right side high frequency are adjusted, and through multiple cycles of this process, the metal plating film on the inner wall of the through hole is uniform.

[0106] In the above operation process, the left and right plating solution chambers 52 need to keep balance in the liquid circulation. Preferably, the adjustable variable frequency pump 81 can also control the flow rate of the pump-in electroplating solution. In the embodiment, the pump-in flow rate can be 10 L / min to 30 L / min. In the implementation of the electroplating process, the independent circulation control system 30 on both sides of the glass wafer 4 can adjust the flow rate of the electroplating solution in real time, and the flow rates on both sides can be different to achieve excellent electroplating effect. For example, the high-frequency pump-in flow rate is 16 to 30 L / min, the low-frequency pump-in flow rate is 10 to 15 L / min, and the total amount of liquid inflow / outflow on both sides is required to be always 30 L / min; and a stable liquid flow circulation is formed.

[0107] In the embodiment, the independent circulation control system 30 further includes a temperature control system 40 for controlling the temperature of the electroplating solution. The electroplating tank 11 and the flow disturbance mechanism 50 are connected through the pump-in pipeline 83, the temperature control system 40 includes a temperature adjusting device 41 and a temperature sensing element 42, the temperature adjusting device 41 is arranged on the pump-in pipeline 83, and the temperature sensing element 42 is arranged in the flow disturbance mechanism 50 for detecting the temperature of the electroplating solution, and the temperature adjusting device 41 and the temperature sensing element 42 are electrically connected with the controller. The temperature adjusting device 41 includes a cooling module 411 and a heating module 412, which are arranged on the pump-in pipeline 83 in sequence. In this way, through the above arrangement, a specific arrangement mode of the temperature control system 40 is provided, forming independent temperature control of the electroplating solution pump-in of the independent circulation control system 30 on each side, and further adjusting the basic conditions of the electroplating chemical reaction to improve the electroplating quality.

[0108] Further, the electroplating device 1 provided by the embodiment further includes an overflow transfer tank 84, which is in communication with the electroplating tank 11 and the liquid storage tank 82. The electroplating solution in the electroplating tank 11 continuously overflows into the overflow transfer tank 84 and is guided back to the liquid storage tank 82 through the overflow transfer tank 84, realizing the circulation and exchange of the electroplating solution.

[0109] The wafer clamp 20 comprises a plurality of wafer clamping positions 21 arranged along the length direction thereof; each wafer clamping position 21 is provided with an independent circulation control system 30 on each side thereof; the uniform flow mechanisms 60 included in the plurality of independent circulation control systems 30 on the same side share a support plate 62 and a moving device 70 connected to the support plate 62; the support plate 62 comprises a plurality of uniform flow plate mounting positions arranged along the length direction thereof, and the uniform flow plate mounting positions are arranged in one-to-one correspondence with the wafer clamping positions 21. In this way, by introducing a plurality of wafer clamping positions 21 and corresponding structures, the need for electroplating a plurality of glass wafers 4 simultaneously is met. Each plating solution chamber 52 is provided with an independent circulation control system 30, so that each electroplating unit can independently control the pump frequency, temperature and other process parameters, thereby providing higher production efficiency and process flexibility, while ensuring the electroplating uniformity of each glass wafer 4, optimizing the overall production process, and improving the electroplating efficiency and product quality.

[0110] In the present embodiment, the wafer clamp 20 comprises two wafer clamping positions 21 arranged along the length direction thereof, but is not limited thereto, and in other embodiments, it can also comprise three, four or other number of wafer clamping positions 21. The first independent circulation control system 31 and the second independent circulation control system 32 on each side of each wafer clamping position 21 are mirror image arranged on the two sides of the corresponding wafer clamping position 21.

[0111] The present embodiment also provides an electroplating device for TGV glass wafers 4, which comprises the electroplating apparatus 1 for TGV glass wafers 4 described above.

[0112] The present embodiment also provides an electroplating method for TGV glass wafers, which is adopted by the electroplating apparatus 1 for TGV glass wafers 4 described above. As shown in Figure 9 The electroplating method comprises the following steps:

[0113] Step S1, fixing the glass wafer on the wafer clamping position and keeping it stationary;

[0114] Step S2, starting the adjustable variable frequency pump of the independent circulation control system on each side of the glass wafer, so that the electroplating solution is sprayed out through the small holes on the baffle plate to penetrate the through holes of the glass wafer after being adjusted in temperature by the temperature adjusting device of the temperature control system from the liquid storage tank to the plating solution chamber; and the independent circulation control systems on the two sides are respectively a first independent circulation control system and a second independent circulation control system, the adjustable variable frequency pump of the first independent circulation control system is adjusted to low frequency output within a first preset time, and the adjustable variable frequency pump of the second independent circulation control system is adjusted to high frequency output; within a second preset time after the first preset time, the adjustable variable frequency pump of the first independent circulation control system is adjusted to high frequency output, and the adjustable variable frequency pump of the second independent circulation control system is adjusted to low frequency output, and the process is repeated for a preset number of times.

[0115] Step S2', obtaining the real-time temperature of the electroplating solution in the plating solution chamber, comparing the real-time temperature with the preset temperature, judging whether the real-time temperature is within the tolerance range of the preset temperature, and controlling the temperature adjusting device to adjust the real-time temperature of the electroplating solution in the plating solution chamber to the tolerance range of the preset temperature according to the judgment result;

[0116] Wherein, step S2 and step S2' are performed simultaneously, or step S2 is performed before or after step S2'.

[0117] In this way, through the pulse frequency-adjustable pump-in electroplating solution double-side independent circulation control, the control of the double-side electroplating solution pump-in rate and the stable circulation of the electroplating solution during the through-hole electroplating of the glass wafer are realized, the metal ion diffusion and concentration distribution are effectively improved, and finally the optimization control of the through-hole plating film thickness and quality of the glass wafer is realized. Moreover, through the real-time temperature control of the liquid electroplating solution on both sides, the influence of the electroplating solution temperature on the performance of the glass material is avoided, and the problem that the high or low temperature will cause the failure of the TGV through-hole electroplating process or the uneven plating layer is solved. At the same time, the temperature control system also has the function of controlling and adjusting the electroplating film forming speed. It should be noted that the adjustable variable frequency pump of the special double-side liquid electroplating and the independent circulation control system on both sides, one side is low frequency and the other side is high frequency, and after a preset time, it is converted to one side high frequency and the other side low frequency, and this process is repeated for a preset number of times, which can effectively compensate for the problem of uneven plating layer thickness on both sides of the glass wafer through-hole caused by the inflow of the electroplating solution from one side of the glass wafer through-hole during single-side electroplating. The plating solution chambers of the independent circulation control systems on both sides are connected to the corresponding adjustable variable frequency pumps, which can control the pump-in speed of the electroplating solution on both sides of the glass wafer respectively and simultaneously, and realize the balance of the electroplating layer film forming in the through-hole of the glass wafer.

[0118] Preferably, in step S2', the electroplating method further comprises:

[0119] Step S21', obtaining the real-time temperature of the electroplating solution in the plating solution chamber;

[0120] Step S22', comparing the real-time temperature with the preset temperature, judging whether the real-time temperature is within the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to be in standby state; if no, executing step S23';

[0121] Step S23', judging whether the real-time temperature is lower than the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to heat the flowing electroplating solution for a third preset time, and after the third preset time, executing step S21' again; if no, executing step S24';

[0122] Step S24', controlling the temperature adjusting device to cool the flowed electroplating solution in a fourth preset time, and after the fourth preset time, step S21' is executed again.

[0123] In this way, by the above setting, a method step of specifically controlling the temperature adjusting device to adjust the instant temperature of the electroplating solution in the plating solution chamber to the preset temperature range is provided. It should be noted that in the electroplating process, the preset temperature of the electroplating solution varies according to the metal to be plated, such as when plating copper, the preset temperature is in the temperature range of 25°C (plus or minus 5°C); when plating gold, the preset temperature is in the temperature range of 50°C (plus or minus 5°C). The preset temperature range is plus or minus 3% of the preset temperature.

[0124] The instant temperature of the electroplating solution flowing on both sides is controlled by the temperature control system including the temperature adjusting device and the temperature sensing element. The performance of the glass material is not affected by the temperature of the electroplating solution, and the problem of failure of the glass wafer through-hole electroplating process or uneven plating layer caused by excessively high or low temperature is solved; at the same time, the temperature control system also has the function of controlling and adjusting the electroplating film formation speed. Among them, the heating module is controlled to work to heat the flowed electroplating solution; the cooling module is controlled to work to cool the flowed electroplating solution.

[0125] The instant temperature in the plating solution chamber is detected by the temperature sensing element in the plating solution chamber in real time, and different preset temperatures are selected to control the film formation speed at different stages of the electroplating TGV process designed according to the aspect ratio and hole diameter of the glass wafer through-hole; when the instant temperature exceeds or is lower than the preset temperature mentioned above by the allowable range at a certain stage of the process, the electroplating solution can be cooled or heated by operating the temperature adjusting device; the temperature sensing element in the plating solution chamber can detect the temperature of the plating solution in the plating solution chamber in real time, and different preset temperatures are selected to control the film formation speed at different stages of the electroplating TGV process designed according to the aspect ratio and hole diameter of the glass wafer through-hole; when the actual instant temperature exceeds or is lower than the preset temperature mentioned above by the allowable range when a certain stage of the process is performed, the electroplating solution can be cooled or heated by operating the temperature adjusting device; the temperature sensing element cooperates with the temperature adjusting device to dynamically change the real-time electroplating film formation rate due to temperature changes at different stages of the glass wafer through-hole filling electroplating process designed according to the aspect ratio and hole diameter.

[0126] Specifically, before step S2', the electroplating method further comprises: reducing the temperature of the electroplating solution below the preset temperature. That is, before starting the film plating, the temperature of the electroplating solution is reduced below the preset temperature (process temperature); then, when starting the film plating, the temperature of the electroplating solution is again increased to the preset temperature. Since the temperature of the electroplating solution fluctuates before it is pumped again, by reducing the temperature to a certain value and then increasing it to the preset temperature, the consistency of the temperature of the electroplating solution can be better controlled.

[0127] Specifically, before step S2', the electroplating method further comprises:

[0128] The aspect ratio and diameter of the glass wafer via hole to be electroplated and the pre-plating film thicknesses at three different positions are input into the segmented adaptive variable-frequency electroplating model, so that the first preset time, the first current density within the first preset time, and the second preset time, the second current density within the second preset time are output from the segmented adaptive variable-frequency electroplating model according to the pre-plating film thicknesses; wherein the segmented adaptive variable-frequency electroplating model measures the film thickness by offline detection after the glass wafer is taken out after a certain time under different current densities, and increases the corresponding curve values of thickness and time under different current densities by epitaxy and interpolation method. It should be noted that, as shown in Figure 8 The three different positions of the pre-plating film thicknesses can be defined as the left segment from the left opening position of the glass wafer via hole to the position one half away from the center of the glass wafer via hole, the right segment from the right opening position of the glass wafer via hole to the position one half away from the center of the glass wafer via hole, and the center position segment of the glass wafer via hole between the two segments. In this way, the film thickness requirements at different positions may be different, and the via hole diameter may also be different, so the model is processed in segments. The modeling method of the segmented adaptive variable-frequency electroplating model is to establish a family of curves in a rectangular coordinate system with time on the horizontal axis and thickness on the vertical axis, wherein curve a is the current density a, curve b is the current density b, and so on, that is, the relationship between time and thickness is obtained under one current density. The first current density and the second current density output by the model are not a fixed value, which is related to the electroplating power parameters and the flow rate of the electrolyte. The electroplating power adopts pulsed output, and the electroplating power parameters include pulse frequency (i.e. the frequency of switching the flow direction of the electroplating solution), duty cycle, etc., and the flow rate of the electrolyte is the flow rate of the adjustable frequency pump pumping into the electroplating solution.

[0129] In this way, the segmented adaptive variable-frequency electroplating model can quickly obtain the optimal first preset time, first current density within the first preset time, and second preset time, second current density within the second preset time according to the input aspect ratio and diameter of the glass wafer via hole, and pre-plating film thicknesses, effectively controlling the actual film plating thickness.

[0130] Specifically, in the step S2', the electroplating method further comprises:

[0131] The adjustable frequency pump of the independent circulation control system located on both sides of the glass wafer is started, and the moving device connected with the flow uniforming plate is started at the same time. The moving device drives the flow uniforming plate to move towards the glass wafer to a preset distance, and then drives the flow uniforming plate to make continuous reciprocating motion in the vertical and / or horizontal direction relative to the glass wafer. The electroplating solution ejected from the spoiler is buffered by the flow uniforming plate and then penetrates through the through hole of the glass wafer.

[0132] In this way, by controlling the moving device to drive the flow uniforming plate to make continuous reciprocating motion in the vertical and / or horizontal direction relative to the glass wafer, the rate and time interval of the up-down and left-right movement of the flow uniforming plate can be controlled, the metal ion diffusion and concentration distribution are improved, and the last adjustment of the electrochemical reaction is constituted. Not only the uniformity of metal electroplating deposition is optimized, but also the problems of electroplating blockage or voids are effectively avoided, and the internal electroplating quality of the through hole of the glass wafer is improved. During electroplating, after the electroplating solution flows out from the inside of the spoiler at high speed, the flow uniforming plate moves horizontally from the position close to the spoiler to the position close to the glass wafer, stops when the distance from the glass wafer is 2-5 mm, and always keeps the distance to make reciprocating motion in the vertical direction or the left-right direction, or elliptical reciprocating motion in the vertical and left-right directions, until the electroplating is completed (the corresponding mirror image action is made on the left and right sides). Moreover, the electroplating solution ejected from the spoiler penetrates through the through hole of the glass wafer after being buffered by the flow uniforming plate, which avoids the damage of the glass wafer caused by too fast electroplating solution flow rate, and plays a role of buffering the electroplating solution flow.

[0133] The electroplating device and the electroplating equipment of the embodiment adopt the electroplating method described above, have a flow uniforming plate structure capable of controlling the flow rate of the two-side electroplating solution and a spoiler vertical stirring mechanism, and a complete online temperature control system capable of realizing instant temperature control of the two-side liquid electroplating solution, and are a special electroplating equipment structure of two-side liquid electroplating-liquid circulation integration.

[0134] Although the specific embodiments of the present application are described above, those skilled in the art should understand that this is only an example, and the protection scope of the present application is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of the present application, and these changes and modifications all fall within the protection scope of the present application.

Claims

1. A method for electroplating of TGV glass wafers, characterized in that, The method comprises the following steps: S1, fixing the glass wafer on the wafer clamping position and keeping it still; S2, starting the adjustable variable frequency pump of the independent circulation control system on both sides of the glass wafer, so that the electroplating solution is sprayed out through the small holes on the spoiler to permeate the through holes of the glass wafer, and the adjustable variable frequency pump of the first independent circulation control system is adjusted to low frequency output in the first preset time, and the adjustable variable frequency pump of the second independent circulation control system is adjusted to high frequency output; the adjustable variable frequency pump of the first independent circulation control system is adjusted to high frequency output in the second preset time after the first preset time, and the adjustable variable frequency pump of the second independent circulation control system is adjusted to low frequency output; and the process is repeated for a preset number of times; S2', obtaining the real-time temperature of the electroplating solution in the plating solution chamber, comparing the real-time temperature with the preset temperature, judging whether the real-time temperature is within the tolerance range of the preset temperature, and controlling the temperature adjusting device to adjust the real-time temperature of the electroplating solution in the plating solution chamber to the tolerance range of the preset temperature according to the judgment result; Wherein, step S2 and step S2' are carried out at the same time, or step S2 is carried out before or after step S2'.

2. The electroplating method of claim 1, wherein, In step S2', the electroplating method further comprises: S21', obtaining the real-time temperature of the electroplating solution in the plating solution chamber; S22', comparing the real-time temperature with the preset temperature, judging whether the real-time temperature is within the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to be in standby state; if no, executing step S23'; S23', judging whether the real-time temperature is lower than the tolerance range of the preset temperature, if yes, controlling the temperature adjusting device to heat the flowing electroplating solution in the third preset time, and after the third preset time, executing step S21' again; if no, executing step S24'; S24', controlling the temperature adjusting device to cool the flowing electroplating solution in the fourth preset time, and after the fourth preset time, executing step S21' again.

3. The electroplating method of claim 1, wherein, Before step S2', the electroplating method further comprises: reducing the temperature of the electroplating solution below the preset temperature; and / or, Before step S2', the electroplating method further comprises: The depth-width ratio and diameter of the glass wafer through-hole to be electroplated and the pre-plating film thickness of three different positions are input into the segmented adaptive variable frequency electroplating model to output the first preset time, the first current density within the first preset time, the second preset time, and the second current density within the second preset time from the segmented adaptive variable frequency electroplating model according to the pre-plating film thickness; wherein the segmented adaptive variable frequency electroplating model measures the film thickness by offline detection after the glass wafer is taken out after a certain time under different current densities, and increases the corresponding curve values of thickness and time under different current densities by the method of extrapolation and interpolation.

4. The electroplating method according to any one of claims 1 to 3, wherein In the step S2', the electroplating method further comprises: The adjustable variable frequency pump of the independent circulation control system located on both sides of the glass wafer is started, and the moving device connected with the flow uniformizing plate is started at the same time, the moving device drives the flow uniformizing plate to move towards the glass wafer to a preset distance, then the moving device drives the flow uniformizing plate to make continuous reciprocating motion relative to the glass wafer in the vertical and / or horizontal direction, and the electroplating solution sprayed by the spoiler plate penetrates through the glass wafer through-hole after being buffered by the flow uniformizing plate.

5. An electroplating apparatus for TGV glass wafers, characterized by, The electroplating device adopts the electroplating method for TGV glass wafer as claimed in any one of claims 1-4, and comprises an electroplating tank, a wafer clamp, and the independent circulation control systems respectively arranged on both sides of the wafer clamp. The wafer clamp is arranged in the electroplating tank for clamping the glass wafer, and comprises the wafer clamping position. The independent circulation control systems each comprise the temperature control system, the spoiler mechanism, the flow uniformizing mechanism, the moving device, and the electroplating solution circulation mechanism. The electroplating solution circulation mechanism is connected with the spoiler mechanism for inputting the electroplating solution to the spoiler mechanism. The temperature control system is used for controlling the temperature of the electroplating solution. The spoiler mechanism is arranged relative to the wafer clamping position for outputting the electroplating solution towards the wafer clamping position. The flow uniformizing mechanism is arranged between the wafer clamping position and the spoiler mechanism. The moving device is connected with the flow uniformizing mechanism to control the motion of the flow uniformizing mechanism relative to the wafer clamping position in the vertical and / or horizontal direction. The electroplating solution circulation mechanism comprises the adjustable variable frequency pump, the adjustable variable frequency pump controls the electroplating solution to be pumped into the spoiler mechanism in a pulsating manner, the electroplating solution is sprayed by the spoiler mechanism in sequence and flows to the wafer clamping position after being buffered by the flow uniformizing mechanism.

6. The electroplating apparatus of claim 5, wherein The spoiler mechanism comprises a spoiler plate and a plating solution chamber, the spoiler plate is arranged on one side of the plating solution chamber close to the wafer clamping position, and a plurality of small holes are formed in the spoiler plate. The flow uniformizing mechanism comprises a flow uniformizing plate and a support plate, the support plate is used for fixing and positioning the flow uniformizing plate between the spoiler plate and the wafer clamping position, and the moving device is connected with the support plate to drive the flow uniformizing plate to move through the support plate.

7. The electroplating apparatus of claim 6, wherein The uniform flow plate is provided with multiple circles of uniform flow holes in the thickness direction, the uniform flow holes are arc-shaped holes, and the multiple circles of uniform flow holes are arranged from the center to the outside along the radial direction of the uniform flow plate.

8. The electroplating apparatus of claim 5, wherein The electroplating tank and the turbulence mechanism are connected through a pump-in pipeline, the temperature control system comprises the temperature adjusting device and a temperature sensing element, the temperature adjusting device is arranged on the pump-in pipeline, the temperature sensing element is arranged in the turbulence mechanism to detect the temperature of the electroplating solution, and the temperature adjusting device and the temperature sensing element are electrically connected with a controller. The temperature adjusting device comprises a cooling module and a heating module, and the cooling module and the heating module are sequentially arranged on the pump-in pipeline.

9. The electroplating apparatus of claim 5, wherein The wafer clamp comprises multiple wafer clamping positions arranged along the length direction thereof; both sides of each wafer clamping position are each provided with one independent circulation control system; the uniform flow mechanisms contained in multiple independent circulation control systems located on the same side share a support plate and the moving device connected with the support plate; the support plate comprises multiple uniform flow plate mounting positions arranged along the length direction thereof, and the uniform flow plate mounting positions are arranged in one-to-one correspondence with the wafer clamping positions.

10. An electroplating apparatus for TGV glass wafers, characterized by, The electroplating device for TGV glass wafers comprises any one of the devices according to claims 5-9.

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