Bottom anti-reflection coating for ArF photoetching and preparation method of bottom anti-reflection coating

Abstract

The invention discloses a bottom anti-reflection coating for ArF photoetching and a preparation method of the bottom anti-reflection coating. The bottom anti-reflection coating is prepared by the following preparation method, and the preparation method comprises the following steps: casting a bottom anti-reflection composition on a semiconductor substrate, and roasting to obtain the bottom anti-reflection coating, the bottom anti-reflection composition comprises the following components in parts by weight: 50-200 parts of a compound as shown in a formula I, 1-100 parts of a cross-linking agent, 0.01-50 parts of a light absorbent, 0.01-50 parts of a photoacid generator and a solvent. The coating has relatively high anti-reflection capability, and an etching process can be avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photoresist technology, in particular to a bottom anti-reflective coating for ArF photoetching and a preparation method thereof. BACKGROUND

[0002] In recent years, due to the continuous high integration of large scale integrated circuits (LSI), in order to miniaturize the photoetching process, especially to carry out the ultra-fine pattern process below 30 nm node, the resolution of the photoresist used in the photoetching process has become a decisive important factor. Therefore, in the commonly used g-line or i-line region, the wavelength of the exposure light is also further shortened, and therefore the research on photoetching using deep ultraviolet, KrF excimer laser and ArF excimer laser has attracted much attention.

[0003] However, when the wavelength of the exposure light source is shortened, the light interference effect caused by the reflected light reflected on the layer to be etched of the semiconductor substrate is increased, and due to undercutting, notching and the like, the problems of poor pattern profile or reduced size uniformity occur. In order to prevent the above problems, a bottom anti-reflective coating (BARC) for absorbing the exposure light (reflected light) is usually formed between the layer to be etched and the photoresist film.

[0004] There are two kinds of etching processes commonly used for anti-reflective coatings at present: etching type and alkali soluble type. Both processes are to coat an anti-reflective coating on the substrate, then spin a layer of photoresist on it, and then perform processes such as pre-baking, exposure, post-baking and development. For photoresist development patterning, there is no difference between the two processes, and the biggest difference between them is the removal process of the coating. The etching type anti-reflective coating is mainly removed by plasma, while the alkali soluble type anti-reflective coating is removed by reacting with the developer in a similar development mechanism as the photoresist. Both processes have their advantages and disadvantages, the etching type process has been widely used in industrial production and has certain controllability and maturity. While the alkali soluble type anti-reflective coating can avoid etching process, reduce the damage of plasma to the substrate, reduce the operation process and improve the production efficiency, but it needs to consider the baking conditions, dissolution rate, post-development residue (PDR) and other problems, therefore, it is urgent to develop excellent alkali soluble type bottom anti-reflective coating (BARC) material in the industry. SUMMARY

[0005] In view of the defects of poor anti-reflective performance and complicated operation process of the existing alkali-soluble bottom anti-reflective coating, the application provides a bottom anti-reflective coating for ArF photoetching and a preparation method thereof, the coating has strong anti-reflective ability, and can be dissolved in a developing solution of photoresist after an exposure process, so that the same pattern as the photoresist is obtained, thus avoiding the etching process for the anti-reflective coating.

[0006] The application provides a bottom anti-reflective coating prepared by a preparation method comprising the following steps: pouring a bottom anti-reflective composition on a semiconductor substrate, and baking to obtain the bottom anti-reflective coating.

[0007] The bottom anti-reflective composition comprises the following components in parts by weight: 50-200 parts of a compound as shown in Formula I, 1-100 parts of a crosslinking agent, 0.01-50 parts of a light absorber, 0.01-50 parts of a photoacid generator, and a solvent.

[0008]

[0009] In the bottom anti-reflective composition, the crosslinking agent is a vinyl ether compound; preferably CH2=CH-O-R-CH=CH2, each R is independently selected from C 1-10 alkylene or C 1-10 alkyleneoxy; for example, a compound as shown in Formula II

[0010] In the bottom anti-reflective composition, the light absorber is an anthracene compound containing an aromatic structure, for example

[0011] In the bottom anti-reflective composition, the photoacid generator is one or more of onium salt compounds, sulfone imide derivatives and disulfonyl diazomethane compounds.

[0012] In the bottom anti-reflective composition, the solvent is one or more of ether solvents, ester solvents, alcohol solvents, aromatic hydrocarbon solvents, ketone solvents and amide solvents.

[0013] In the bottom anti-reflective composition, the ether solvent is preferably one or more of propylene glycol monobutyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and propylene glycol monomethyl ether; and is further preferably propylene glycol monobutyl ether.

[0014] The ester solvent in the bottom anti-reflective composition is preferably one or more of propylene glycol monobutyl ether acetate, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, 2-hydroxypropionic acid ethyl ester, 2-hydroxy-2-methyl-propionic acid ethyl ester, ethoxy acetic acid ethyl ester, hydroxy acetic acid ethyl ester, 2-hydroxy-3-methyl butyric acid methyl ester, 3-methoxy propionic acid methyl ester, 3-methoxy propionic acid ethyl ester, 3-ethoxy propionic acid ethyl ester, 3-ethoxy propionic acid methyl ester, pyruvic acid methyl ester, pyruvic acid ethyl ester, ethyl acetate, butyl acetate, ethyl lactate, and butyl lactate.

[0015] The alcohol solvent in the bottom anti-reflective composition is preferably propylene glycol.

[0016] The aromatic hydrocarbon solvent in the bottom anti-reflective composition is preferably toluene and / or xylene.

[0017] The ketone solvent in the bottom anti-reflective composition is preferably one or more of methyl ethyl ketone, cyclopentanone, and cyclohexanone.

[0018] The amide solvent in the bottom anti-reflective composition is preferably one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

[0019] The amount of the compound of Formula I in the bottom anti-reflective composition is preferably 50-150, more preferably 50-100, for example 100.

[0020] The amount of the crosslinking agent in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0021] The amount of the light absorber in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0022] The amount of the photoacid generator in the bottom anti-reflective composition is preferably 1-20, for example 1, 5, 10, or 20.

[0023] The amount of the solvent in the bottom anti-reflective composition is preferably 1000-2500, more preferably 1200-2000, most preferably 1500-1800, for example 1000.

[0024] The onium salt compound in the bottom anti-reflective composition is preferably an iodonium salt compound, a sulfonium salt compound, or a crosslinkable onium salt compound.

[0025] The iodonium salt compound is preferably one or more of diphenyl iodonium hexafluorophosphate, diphenyl iodonium triflate, diphenyl iodonium nonafluoro-n-butane sulfonate, diphenyl iodonium perfluoro-n-octane sulfonate, diphenyl iodonium camphorsulfonate, bis(4-tert-butylphenyl) iodonium camphorsulfonate, and bis(4-tert-butylphenyl) iodonium triflate.

[0026] The sulfonium salt compound is preferably one or more of triphenyl sulfonium hexafluoroantimonate, triphenyl sulfonium nonafluoro-n-butane sulfonate, triphenyl sulfonium camphorsulfonate, and triphenyl sulfonium triflate, and more preferably triphenyl sulfonium hexafluoroantimonate and / or triphenyl sulfonium triflate.

[0027] The cross-linkable onium salt compound is preferably one or more of bis(4-hydroxyphenyl)(phenyl)sulfonium triflate, bis(4-hydroxyphenyl)(phenyl)sulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate, phenyl bis(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate, and tris(4-(2-(vinyloxy)ethoxy)-phenyl)sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate.

[0028] The sulfone imide derivative in the bottom anti-reflective composition is preferably one or more of N-(trifluoromethanesulfonyloxy)succinimide, N-(fluoro-n-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethylsulfonyloxy)naphthalene dicarboxyimide.

[0029] The disulfono diazomethane compound in the bottom anti-reflective composition is preferably one or more of bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(benzenesulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane.

[0030] The bottom anti-reflective composition can further contain other additional components. The additional components include surfactants or smoothing agents.

[0031] The amount of the additional components in the bottom anti-reflective composition is not particularly limited and can be appropriately determined depending on the target coating.

[0032] The bottom anti-reflective composition is composed of the following components in parts by weight: 50-200 parts of the compound shown as formula I, 1-100 parts of a crosslinking agent, 0.01-50 parts of a light absorbing agent, 0.01-50 parts of a photoacid generator and a solvent;

[0033] The compound shown as formula I, the crosslinking agent, the light absorbing agent, the photoacid generator and the solvent are the same as described above.

[0034] The bottom anti-reflective composition is any one of the following compositions:

[0035] Composition C1-1: 100 parts of the compound shown as formula I, 1 part of the compound shown as formula II, 1 part of the compound shown as formula III, 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0036] Composition C1-2: 100 parts of the compound shown as formula I, 5 parts of the compound shown as formula II, 5 parts of the compound shown as formula III, 5 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; 5 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0037] Composition C1-3: 100 parts of the compound shown as formula I, 10 parts of the compound shown as formula II, 10 parts of the compound shown as formula III, 10 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; 10 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0038] Composition C1-4: 100 parts of the compound shown as formula I, 20 parts of the compound shown as formula II, 20 parts of the compound shown as formula III, 20 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; 20 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0039] Composition C2-1: 100 parts of the compound shown as formula I, 1 part of the compound shown as formula II, 1 part of the compound shown as formula III, 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0040] Composition C2-2: 100 parts of the compound shown as formula I, 5 parts of the compound shown as formula II, 5 parts of the compound shown as formula III, 5 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; 5 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0041] Composition C2-3: 100 parts of the compound shown as formula I, 10 parts of the compound shown as formula II, 10 parts of the compound shown as formula III, 10 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; 10 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether;

[0042] Composition C2-4: 100 parts of the compound of Formula I, 20 parts of the compound of Formula II, 20 parts of 20 parts of triphenylsulfonium triflate and 1000 parts of propylene glycol monobutyl ether;

[0043] Composition C3-1 : 100 parts of the compound of Formula I, 1 part of the compound of Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0044] Composition C3-2: 100 parts of the compound of Formula I, 5 parts of the compound of Formula II, 5 parts of 5 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0045] Composition C3-3: 100 parts of the compound of Formula I, 10 parts of the compound of Formula II, 10 parts of 10 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0046] Composition C3-4: 100 parts of the compound of Formula I, 20 parts of the compound of Formula II, 20 parts of 20 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether;

[0047] Composition C4-1 : 100 parts of the compound of Formula I, 1 part of the compound of Formula II, 1 part of 1 part of triphenylsulfonium triflate and 1000 parts of propylene glycol monobutyl ether;

[0048] Composition C4-2: 100 parts of the compound of Formula I, 5 parts of the compound of Formula II, 5 parts of 5 parts of triphenylsulfonium triflate and 1000 parts of propylene glycol monobutyl ether;

[0049] Composition C4-3: 100 parts of the compound of Formula I, 10 parts of the compound of Formula II, 10 parts of 10 parts of triphenylsulfonium triflate and 1000 parts of propylene glycol monobutyl ether;

[0050] Composition C4-4: 100 parts of the compound of Formula I, 20 parts of the compound of Formula II, 20 parts of 20 parts of triphenylsulfonium triflate and 1000 parts of propylene glycol monobutyl ether.

[0051] The bottom anti-reflective composition is prepared by a preparation method comprising the following steps: mixing the compound (including the type and weight fraction) as shown in formula I, the crosslinking agent (including the type and weight fraction), the light absorbing agent (including the type and weight fraction), the photo-acid generator (including the type and weight fraction) and the solvent (including the type and weight fraction) as described above to obtain the bottom anti-reflective composition.

[0052] The mixing temperature is preferably 15-35℃, for example 25℃.

[0053] The mixing mode is preferably stirring, and the stirring time is preferably 30 minutes.

[0054] After mixing, it is further preferred to further comprise filtering, which is preferably filtering using a filter, and the pore size of the filter is preferably 0.05-0.2μm, more preferably 0.05μm.

[0055] In the preparation method of the bottom anti-reflective coating, the casting tool is a spin coater or a coater, preferably a spin coater.

[0056] In the preparation method of the bottom anti-reflective coating, the semiconductor substrate is one of a silicon or silicon dioxide coated substrate, a silicon nitride substrate, a silicon wafer substrate, a glass substrate or an ITO substrate, preferably a silicon wafer substrate.

[0057] In the preparation method of the bottom anti-reflective coating, the baking temperature is 80-250℃, preferably 100-250℃, more preferably 190℃.

[0058] In the preparation method of the bottom anti-reflective coating, the baking time is 0.3-5 minutes, preferably 0.5-2 minutes, more preferably 1 minute.

[0059] The application also provides a preparation method of a bottom anti-reflective coating, which comprises the following steps: casting the bottom anti-reflective composition as described above on a semiconductor substrate, and baking to obtain a bottom anti-reflective coating.

[0060] The operation and conditions of the preparation method of the bottom anti-reflective coating are the same as described above.

[0061] The application also provides a method for forming a photoresist pattern, which comprises the following steps:

[0062] S1: casting a bottom anti-reflective composition on a semiconductor substrate, and baking to obtain a bottom anti-reflective coating;

[0063] S2: applying a photoresist on the above-mentioned bottom anti-reflective coating;

[0064] S3: soft baking;

[0065] S4: exposure;

[0066] S5: baking;

[0067] S6: development.

[0068] In the method of forming a photoresist pattern, the photoresist can be conventional in the art, preferably a positive photoresist, a negative photoresist or a negative tone development (NTD) photoresist, more preferably a 193 nm positive photoresist (TOK, tai-6990PH).

[0069] In the method of forming a photoresist pattern, the soft baking temperature is 100-140°C, preferably 120°C.

[0070] In the method of forming a photoresist pattern, the soft baking time is 0.5-2 minutes, preferably 1 minute.

[0071] In the method of forming a photoresist pattern, the exposure light can be conventional in the art, preferably light having a wavelength of 13.5-248 nm, more preferably an ArF excimer laser (wavelength: 193 nm).

[0072] In the method of forming a photoresist pattern, the baking temperature is 80-150°C, preferably 100-140°C, more preferably 130°C.

[0073] In the method of forming a photoresist pattern, the baking time is 0.3-5 minutes, preferably 0.5-2 minutes, further preferably 1 minute.

[0074] In the method of forming a photoresist pattern, the development is performed using a developing solution, which can easily dissolve and remove the bottom anti-reflective coating.

[0075] In the method of forming a photoresist pattern, the developing solution is preferably an alkaline developing solution, further preferably an aqueous solution of an alkali metal hydroxide, an aqueous solution of a tertiary ammonium hydroxide or an aqueous solution of an amine.

[0076] In the method of forming a photoresist pattern, the aqueous solution of an alkali metal hydroxide is preferably an aqueous solution of potassium hydroxide or an aqueous solution of sodium hydroxide.

[0077] The aqueous solution of the tertiary amine hydroxide is preferably an aqueous solution of tetramethylammonium hydroxide (TMAH), an aqueous solution of tetraethylammonium hydroxide or an aqueous solution of choline.

[0078] The aqueous solution of the amine is preferably an aqueous solution of ethanolamine, an aqueous solution of propylamine or an aqueous solution of ethylenediamine.

[0079] The developing solution is more preferably an aqueous solution of 2.38 wt% tetramethylammonium hydroxide.

[0080] The developing solution can further contain a surfactant.

[0081] The developing temperature is preferably 5-50°C, more preferably 25-40°C, for example 30°C.

[0082] The developing time is preferably 10-300 seconds, more preferably 30-60 seconds, for example 40 seconds.

[0083] The above-mentioned preferred conditions can be combined in any way to obtain preferred embodiments of the present application.

[0084] In the present application, the room temperature is 15-35°C, preferably 25°C.

[0085] The reagents and raw materials used in the present application are commercially available.

[0086] The positive progress of the present application is that it can effectively reduce light reflection, eliminate standing wave effect, reduce LER and LWE of the pattern, improve the resolution of the pattern, avoid etching process, reduce damage of plasma to the substrate, reduce operation process and improve production efficiency. DETAILED DESCRIPTION

[0087] The present application will be further described by way of examples, but the present application is not limited to the examples. The experimental methods in the following examples, if not otherwise specified, are selected according to conventional methods and conditions, or according to the instructions of the commercial products.

[0088] In the description of the examples, "parts" and "%" refer to "parts by weight" and "wt%", respectively, unless otherwise specified.

[0089] Preparation method of the bottom antireflective coating in Example 1

[0090] A compound as shown in Formula I, a crosslinking agent as shown in Formula II, a light absorber, a photoacid generator and a solvent were mixed, the kind and the amount of which are shown in Table 1, Table 2. The mixture was stirred at room temperature for 30 minutes, and then the mixture was filtered through a filter having a pore size of 0.05 μm to prepare a bottom anti-reflective composition in the form of a solution.

[0091] The prepared bottom anti-reflective composition was cast on a silicon wafer substrate by spin coating, and a bottom anti-reflective coating layer of Examples 1-16 was prepared by crosslinking at 190°C for 1 minute on a vacuum hot plate.

[0092]

[0093] Table 1 Kind

[0094]

[0095] Table 2 Amount

[0096]

[0097]

[0098] Example 2 Application and Effect of Example

[0099] 1. Optical property measurement

[0100] The refractive index (n value) and the extinction coefficient (k value) of the bottom anti-reflective coating layer obtained by the ellipsometer measurement at 193 nm.

[0101] 2. Development property measurement

[0102] Method for forming a photoresist pattern and development property measurement of the bottom anti-reflective coating layer when the exposure light wavelength is 193 nm

[0103] A commercially available 193 nm positive photoresist (TOK Co., tai-6990PH) was spin-coated on the obtained bottom anti-reflective coating layer. The formed resist layer was soft-baked at 120°C for 1 minute on a vacuum hot plate, and then imagewise exposed to 193 nm radiation by a photomask. After post-exposure baking at 130°C for 1 minute, the resist layer was developed at 30°C for 40 seconds using a 2.38 wt% TMAH aqueous solution. As a result of this development, the photoresist layer and the underlying bottom anti-reflective coating layer were removed in the region defined by the photomask, and the solvent resistance of the anti-reflective coating layer was observed in the region exposed to the radiation. The pattern cross-sectional shape was observed.

[0104] The results of the performance test of the bottom anti-reflective coating layers 1-16 are shown in Table 3.

[0105] Table 3

[0106]

[0107]

[0108] Note: Regarding the cross-sectional shape of the pattern: A indicates that both the photoresist and the bottom anti-reflective coating show a rectangular side surface perpendicular to the substrate surface; B indicates that both the photoresist and the bottom anti-reflective coating show a side surface which is not perpendicular to, but slightly inclined to the substrate surface, but which is not practically any problem; C indicates that both the photoresist and the bottom anti-reflective coating show a side surface which is a fit shape with respect to the substrate surface.

Claims

1. A bottom anti-reflective coating prepared by a preparation method comprising the steps of: casting a bottom anti-reflective composition on a semiconductor substrate, baking to obtain a bottom anti-reflective coating; the bottom anti-reflective composition comprising the following components in parts by weight: 50 to 200 parts of a compound represented by Formula I, 1 to 100 parts of a crosslinking agent, 0.01 to 50 parts of a light absorbing agent, 0.01 to 50 parts of a photoacid generator, and a solvent; 2. The bottom antireflective coating of claim 1, wherein the bottom anti-reflective composition satisfying one or more of the following conditions: (1) the crosslinking agent is a vinyl ether compound; preferably CH2=CH-O-R-CH=CH2, each R being independently selected from C 1-10 alkylene or C 1-10 alkyleneoxy; for example a compound of formula II (2) The light absorber is an anthracene compound containing an aromatic structure, for example (3) the photoacid generator is one or more of onium salt compounds, sulfone imide derivatives, and disulfone diazomethane compounds; (4) the solvent is one or more of ether solvents, ester solvents, alcohol solvents, aromatic hydrocarbon solvents, ketone solvents, and amide solvents; (5) the compound represented by Formula I is 50 to 150 parts by weight, preferably 50 to 100 parts by weight, for example 100 parts by weight; (6) the crosslinking agent is 1 to 20 parts by weight, for example 1, 5, 10, or 20 parts by weight; (7) the light absorbing agent is 1 to 20 parts by weight, for example 1, 5, 10, or 20 parts by weight; (8) the photoacid generator is 1 to 20 parts by weight, for example 1, 5, 10, or 20 parts by weight; (9) the solvent is 1000 to 2500 parts by weight, preferably 1200 to 2000 parts by weight, more preferably 1500 to 1800 parts by weight, for example 1000 parts by weight.

3. The bottom antireflective coating of claim 2, wherein the bottom anti-reflective composition satisfying one or more of the following conditions: (1) the ether solvent is one or more of propylene glycol monobutyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and propylene glycol monomethyl ether; further preferably propylene glycol monobutyl ether; (2) the ester solvent is one or more of propylene glycol monobutyl ether acetate, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, 2-hydroxypropionic acid ethyl ester, 2-hydroxy-2-methyl-propionic acid ethyl ester, ethoxyacetic acid ethyl ester, hydroxyacetic acid ethyl ester, 2-hydroxy-3-methylbutyric acid methyl ester, 3-methoxypropionic acid methyl ester, 3-methoxypropionic acid ethyl ester, 3-ethoxypropionic acid ethyl ester, 3-ethoxypropionic acid methyl ester, pyruvic acid methyl ester, pyruvic acid ethyl ester, acetic acid ethyl ester, acetic acid butyl ester, lactic acid ethyl ester, and lactic acid butyl ester; (3) the alcohol solvent is propylene glycol; (4) the aromatic hydrocarbon solvent is toluene and / or xylene; (5) the ketone solvent is one or more of methyl ethyl ketone, cyclopentanone, and cyclohexanone; (6) the amide solvent is one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

4. The bottom antireflective coating of claim 2, wherein the bottom anti-reflective composition satisfying one or more of the following conditions: (1) the onium salt compound is an iodonium salt compound, a sulfonium salt compound, or a crosslinkable onium salt compound; The iodonium salt compound is preferably one or more of diphenyl iodonium hexafluorophosphate, diphenyl iodonium triflate, diphenyl iodonium nonafluoro-n-butane sulfonate, diphenyl iodonium perfluoro-n-octane sulfonate, diphenyl iodonium camphorsulfonate, bis(4-tert-butylphenyl) iodonium camphorsulfonate, and bis(4-tert-butylphenyl) iodonium triflate; The sulfonium salt compound is preferably one or more of triphenyl sulfonium hexafluoroantimonate, triphenyl sulfonium nonafluoro-n-butane sulfonate, triphenyl sulfonium camphorsulfonate, and triphenyl sulfonium triflate, more preferably triphenyl sulfonium hexafluoroantimonate and / or triphenyl sulfonium triflate; The cross-linkable onium salt compound is preferably one or more of bis(4-hydroxyphenyl)(phenyl) sulfonium triflate, bis(4-hydroxyphenyl)(phenyl) sulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate, phenyl bis(4-(2-(vinlyloxy)ethoxy)-phenyl) sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate, and tri(4-(2-(vinlyloxy)ethoxy)-phenyl) sulfonium 1,1,2,2,3,3,4,4-octafluoro-butane-1,4-disulfonate; (2) The sulfone imide derivative is one or more of N-(trifluoromethanesulfonyloxy)succinimide, N-(fluoro-n-butanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethylsulfonyloxy)naphthalene dicarboximide; (3) The disulfonyl diazomethane compound is one or more of bis(trifluoromethylsulfonyl) diazomethane, bis(cyclohexylsulfonyl) diazomethane, bis(benzenesulfonyl) diazomethane, bis(p-toluenesulfonyl) diazomethane, bis(2,4-dimethylbenzenesulfonyl) diazomethane, and methylsulfonyl-p-toluenesulfonyl diazomethane.

5. The bottom antireflective coating of claim 1, wherein The bottom anti-reflective composition is composed of the following components by weight parts: 50-200 parts of the compound represented by Formula I, 1-100 parts of the cross-linking agent, 0.01-50 parts of the light absorber, 0.01-50 parts of the photo-acid generator, and a solvent.

6. The bottom antireflective coating of claim 1, wherein The bottom anti-reflective composition is any one of the following compositions: (1) Composition C1-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; (2) Composition C1-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (3) Composition C1-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (4) Composition C1-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (5) Composition C2-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; (6) Composition C2-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (7) Composition C2-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (8) Composition C2-4: 100 parts of the compound shown in Formula I, 20 parts of the compound shown in Formula II, and 20 parts of... 20 parts of triphenylsulfonium trifluoromethane sulfonate and 1000 parts of propylene glycol monobutyl ether; (9) Composition C3-1: 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; (10) Composition C3-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (11) Composition C3-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonium hexafluoroantimonate and 1000 parts propylene glycol monobutyl ether; (12) Composition C3-4: 100 parts of the compound represented by Formula I, 20 parts of the compound represented by Formula II, 20 parts of 20 parts of triphenylsulfonium hexafluoroantimonate and 1000 parts of propylene glycol monobutyl ether; (13) Composition C4-1 : 100 parts of the compound represented by Formula I, 1 part of the compound represented by Formula II, 1 part of 1 part of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether; (14) Composition C4-2: 100 parts of the compound shown in Formula I, 5 parts of the compound shown in Formula II, and 5 parts of... 5 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (15) Composition C4-3: 100 parts of the compound shown in Formula I, 10 parts of the compound shown in Formula II, and 10 parts of... 10 parts triphenylsulfonate trifluoromethane sulfonate and 1000 parts propylene glycol monobutyl ether; (16) Composition C4-4: 100 parts of the compound represented by Formula I, 20 parts of the compound represented by Formula II, 20 parts of 20 parts of triphenylsulfonium trifluoromethanesulfonate and 1000 parts of propylene glycol monobutyl ether.

7. The bottom antireflective coating of any of claims 1 to 6, wherein The bottom anti-reflective composition is prepared by the following preparation method; the preparation method comprises the following steps: mixing the compound represented by Formula I according to any one of claims 1-6, the cross-linking agent according to any one of claims 1-6, the light absorber according to any one of claims 1-6, the photo-acid generator according to any one of claims 1-6, and the solvent according to any one of claims 1-6 to obtain the bottom anti-reflective composition according to any one of claims 1-6.

8. The bottom antireflective coating of claim 7, wherein The bottom anti-reflective composition satisfies one or more of the following conditions: (1) The mixing temperature is 15-35°C; for example, 25°C; (2) The mixing mode is stirring; the stirring time is preferably 30 minutes; (3) The mixing mode is stirring; the stirring time is preferably 30 minutes; (3) the mixing is further followed by filtering, preferably using a filter having a pore size of 0.05 to 0.2 μm, for example 0.05 μm.

9. The bottom antireflective coating of claim 1, wherein, one or more of the following conditions are met: (1) the casting tool is a spin coater or a coater, preferably a spin coater; (2) the semiconductor substrate is one of a silicon or silicon dioxide coated substrate, a silicon nitride substrate, a silicon wafer substrate, a glass substrate or an ITO substrate, preferably a silicon wafer substrate; (3) the baking temperature is 80 to 250 °C, preferably 100 to 250 °C, more preferably 190 °C; (4) the baking time is 0.3 to 5 minutes, preferably 0.5 to 2 minutes, more preferably 1 minute.

10. A method for producing a bottom antireflective coating, characterized by, the method of claim 9, wherein the semiconductor substrate is one of a silicon or silicon dioxide coated substrate, a silicon nitride substrate, a silicon wafer substrate, a glass substrate or an ITO substrate, preferably a silicon wafer substrate. the method of claim 9, wherein the baking temperature is 80 to 250 °C, preferably 100 to 250 °C, more preferably 190 °C. the method of claim 9, wherein the baking time is 0.3 to 5 minutes, preferably 0.5 to 2 minutes, more preferably 1 minute.

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