Inductive element and electronic device

Abstract

The application relates to the technical field of inductance elements, in particular to an inductance element and an electronic device. The inductance element comprises a main body, two embedded terminals and a coil. The main body has a top surface and a bottom surface arranged oppositely and two side surfaces arranged oppositely, the opposite direction of the top surface and the bottom surface is a first direction, the opposite direction of the two side surfaces is a second direction, the first direction intersects the second direction. Along the second direction, the two embedded terminals are arranged on one side of the bottom surface facing the top surface. The height of the embedded terminal along the first direction is H1, and the width of the embedded terminal along the second direction is W1, wherein 0.07<=H1 / W1<=0.18. The coil is arranged in the main body and electrically connected with the embedded terminal. The coil comprises at least one layer of inner electrodes, and the inner electrodes at least partially extend between the embedded terminal and the top surface. The inductance element can have a larger inductance and a higher quality factor.

Description

Technical Field

[0001] This application relates to the field of inductor technology, and more particularly to an inductor and an electronic device. Background Technology

[0002] Within an inductor, because the embedded terminals occupy space within the main body, the internal electrodes within the main body need to be spaced a certain distance from the embedded terminals. This makes the routing of the internal electrodes near the embedded terminals tortuous and difficult, forcing the internal electrode size to shrink. The area within the coil of the internal electrode is difficult to increase further, thus limiting the inductance and quality factor (Q value) of the inductor. Summary of the Invention

[0003] This application discloses an inductor and an electronic device that can have both a large inductance and a high Q value.

[0004] To achieve the above objectives, in a first aspect, embodiments of this application disclose an inductor element, comprising:

[0005] The main body has a top surface and a bottom surface that are arranged opposite to each other, and two side surfaces that are arranged opposite to each other. The relative direction of the top surface and the bottom surface is a first direction, and the relative direction of the two side surfaces is a second direction. The first direction and the second direction intersect.

[0006] Two embedded terminals are spaced apart along the second direction on the side of the bottom surface facing the top surface; the height of the embedded terminal along the first direction is H1, and the width of the embedded terminal along the second direction is W1, wherein 0.07 ≤ H1 / W1 ≤ 0.18; and

[0007] A coil is disposed within the body and electrically connected to the embedded terminal; the coil includes at least one layer of inner electrodes, the plane of which is parallel to the plane formed by the first direction and the second direction; at least a portion of the inner electrodes extend between the embedded terminal and the top surface.

[0008] In one possible implementation of the first aspect, a portion of the inner electrode extends between the two embedded terminals.

[0009] In one possible implementation of the first aspect, on the side surface, the orthographic projection of the inner electrode and the orthographic projection of the embedded terminal partially overlap, and the overlapping portion is an overlapping region.

[0010] The orthographic projection area of ​​a single inner electrode on the side surface is S1, and the area of ​​the overlapping region of a single inner electrode is S2, wherein S2 / S1 < 5%.

[0011] In one possible implementation of the first aspect, the total number of internal electrodes is n, where n×S2 < 700 square micrometers.

[0012] In one possible implementation of the first aspect, on the side surface, the orthographic projection of the inner electrode and the orthographic projection of the embedded terminal partially overlap, and the overlapping portion is an overlapping region.

[0013] The length of each overlapping region along the first direction is L1, and the linewidth of the inner electrode is W2, wherein L1 < W2.

[0014] In one possible implementation of the first aspect, the main body is a hexahedron, and the main body also has a front and a back side disposed opposite to each other, and the orthographic projection shape of the embedded terminal on the front side is a straight strip.

[0015] In one possible implementation of the first aspect, along the second direction, the ends of the two embedded terminals that are close to each other both have a chamfered profile;

[0016] The radius of the chamfered profile is r, where 10 micrometers ≤ r ≤ H1.

[0017] In a possible implementation of the first aspect, the internal electrode includes:

[0018] Side conductor, which extends between the embedded terminal and the top surface.

[0019] In a possible implementation of the first aspect, the side guide extends along the first direction; wherein, along the first direction, the length of the side guide is L2, and the height of the main body is H2, satisfying the following relationship: 0.7≤L2 / H2≤0.85;

[0020] And / or, along the second direction, the distance between each of the side conductors and the nearest side is D0, where 3 micrometers ≤ D0 ≤ 15 micrometers.

[0021] In a possible implementation of the first aspect, the internal electrode further includes:

[0022] A lower conductor is connected to one end of the side conductor near the embedded terminal, and the lower conductor extends at least partially along the upper contour of the embedded terminal.

[0023] The upper contour is the side contour of the embedded terminal facing the top surface.

[0024] In a possible implementation of the first aspect, the upper contour extends from the side along the second direction and is close to the center of the body, and one end of the upper contour close to the center of the body bends and extends to the bottom surface;

[0025] The lower conductor includes a first conductor segment and a second conductor segment. The first conductor segment is connected to one end of the side conductor near the embedded terminal and extends along the second direction near the center of the main body. The second conductor segment is connected to one end of the first conductor segment near the center of the main body. The second conductor segment is also bent relative to the first conductor segment and close to the bottom surface.

[0026] Wherein, the center of the main body is the center of the main body along the second direction.

[0027] In one possible implementation of the first aspect, the lower conductor further includes a third conductor segment connected to one end of the second conductor segment near the bottom surface and extending along the second direction away from the connected second conductor segment;

[0028] The third conductor segment is located between the two embedded terminals.

[0029] In a possible implementation of the first aspect, the distance between the third conductor segment and the bottom surface is D1, satisfying the following relationship: 0.6 ≤ D1 / H1 ≤ 1.6; and / or,

[0030] The two embedded terminals are spaced apart along the second direction with a distance of D2; along the second direction, the narrowest distance between the third conductor segment and the embedded terminals is D3, satisfying the following relationship: 0.05 ≤ D3 / D2 ≤ 0.1; and / or,

[0031] The included angle α between the first conductor segment and the second conductor segment is greater than 180°.

[0032] In a possible implementation of the first aspect, the internal electrode further includes:

[0033] The upper conductor extends along the second direction. There are two side conductors, which are spaced apart along the second direction. The end of each side conductor near the top surface is connected to the end of the upper conductor along the second direction.

[0034] In one possible implementation of the first aspect, the height of the body along the first direction is H2, satisfying the following relationship: 0.08

[0035] Along the first direction, the height H2 of the body is ≤ 320 micrometers; and / or,

[0036] 5 micrometers ≤ H1 ≤ 20 micrometers.

[0037] ​In one possible implementation of the first aspect, along the second direction, the ends of the two embedded terminals that are away from each other extend to each of the sides.

[0038] Secondly, embodiments of this application disclose an electronic device including an inductor as described in the first aspect.

[0039] Compared with the prior art, the beneficial effects of this application are:

[0040] In this application, two embedded terminals are located on the bottom side of the plane where the inner electrode is located. In this way, in order to reduce parasitic capacitance, only the bottom section of the inner electrode needs to avoid the embedded terminals, and the rest of the inner electrode can be as close as possible to the body contour, thereby increasing the inner area.

[0041] Furthermore, when the height H1 of the embedded terminal along the first direction satisfies H1 / W1≤0.18, the height H1 of the embedded terminal along the first direction is sufficiently small, providing a large space between the embedded terminal and the top surface for the extension of the inner electrode, which is beneficial for increasing the in-circle area of ​​the inner electrode. Since the inductance is proportional to the in-circle area of ​​the inner electrode, a larger in-circle area of ​​the inner electrode is beneficial for increasing the contribution of a single inner electrode to the inductance. In this way, this application can easily achieve the expected inductance even without using a single-layer multi-turn wire group, thereby avoiding the Q-value degradation caused by proximity effect, so that the inductor element has both a large inductance and a high Q value.

[0042] Considering that as the height H1 of the embedded terminal along the first direction decreases, the cross-sectional area of ​​the embedded terminal decreases. Since the resistance of the embedded terminal is inversely proportional to its cross-sectional area, the resistance of the embedded terminal increases accordingly, leading to a decrease in the Q value. Based on this, in this application, the width W of the embedded terminal along the second direction satisfies 0.07 ≤ H1 / W1. At this time, the height H1 of the embedded terminal along the first direction is still high enough, the cross-sectional area of ​​the embedded terminal is large enough, the resistance of the embedded terminal is small, and the current transmission loss is also small, which is beneficial to maintaining a high Q value for the inductor.

[0043] In summary, when the height H1 of the internal electrode along the first direction satisfies 0.07≤H1 / W1≤0.18, the inductor has both a large inductance and a high Q value. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1This is a schematic projection of the coil of an inductor disclosed in Embodiment 1 of this application on the front of the main body;

[0046] Figure 2 This is a graph showing the relationship between the Q value and H1 / W1 as disclosed in Embodiment 1 of this application;

[0047] Figure 3 This is a side view of an inductor element disclosed in Embodiment 1 of this application;

[0048] Figure 4 This is a modified structural diagram of an inductor (single-layer structure) disclosed in Embodiment 1 of this application;

[0049] Figure 5 This is an exploded view of an inductor element disclosed in Embodiment 1 of this application;

[0050] Figure 6 This is a graph showing the relationship between the Q value and H1 / H2 as disclosed in Embodiment 1 of this application;

[0051] Figure 7 This is another projected schematic diagram of the coil of an inductor disclosed in Embodiment 1 of this application on the front side of the main body;

[0052] Figure 8 This is a schematic projection of the coil of an inductor disclosed in Embodiment 2 of this application on the front of the main body;

[0053] Figure 9 This is a graph showing the relationship between the Q value and L1 / W2 as disclosed in Embodiment 2 of this application;

[0054] Figure 10 This is a schematic diagram of the structure of an electronic device disclosed in Embodiment 3 of this application.

[0055] Explanation of reference numerals in the attached figures:

[0056] 1. Inductor element; 11. Body; 111. Top surface; 112. Bottom surface; 113. Side surface; 114. Front surface; 115. Back surface; 12. Embedded terminal; 121. Upper contour; 122. Chamfered contour; 123. Parallel section; 124. Transition section; M13. Coil; 13. Inner electrode; 131. Side conductor; 132. Lower conductor; 1321. First conductor segment; 1322. Second conductor segment; 1323. Third conductor segment; 133. Electrical connection terminal; 134. Upper conductor; 14. Insulating layer; A. Overlapping area; Z. First direction; X. Second direction; Y. Third direction;

[0057] 100. Electronic devices. Detailed Implementation

[0058] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0059] In this application, the terms "upper," "lower," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0060] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0061] Furthermore, the terms "set up," "equipped with," "connected," and "connected" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0062] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0063] For inductive components, inductance and Q value are two parameters that are difficult to balance simultaneously. The analysis is as follows:

[0064] To conduct the internal electrode, an embedded terminal needs to be placed within the inductor's body. The internal electrode connects to the embedded terminal and conducts to the external circuitry through it. An external terminal is then electroplated onto the surface of the body based on this embedded terminal and soldered onto the circuit board using this external terminal. However, the embedded terminal occupies a certain amount of internal space, and since both the internal electrode and the embedded terminal are conductors (materials such as silver, silver alloy, copper, copper alloy, nickel, or nickel alloy), excessive parasitic capacitance can easily occur if they are placed too close together.

[0065] Therefore, the internal electrode needs to be spaced a certain distance from the embedded terminal, making the routing of the internal electrode near the embedded terminal more tortuous and difficult. For example, in some locations, the internal electrode needs to bend to avoid the embedded terminal, thus passively reducing the area inside the loop. Since the inductance is directly proportional to the area inside the loop, the contribution of a single-layer internal electrode to the inductance decreases as the area inside the loop shrinks.

[0066] Although an inductor can achieve the desired inductance through a single-layer multi-turn coil, which refers to a coil structure formed by winding multiple turns of wire in the same plane (or single-layer space), the Q value of the inductor will deteriorate rapidly due to the proximity effect.

[0067] In general, it is difficult for inductors to simultaneously have a large inductance and a high quality factor.

[0068] Based on the above analysis, this application provides an inductor in which two embedded terminals are located on the bottom side of the plane where the inner electrode is located. In this way, in order to reduce parasitic capacitance, only the bottom part of the inner electrode of this application needs to avoid the embedded terminals, and the rest of the inner electrode can be as close as possible to the outline of the main body, thereby increasing the inner area.

[0069] Based on this, the height H1 of the embedded terminal along the first direction satisfies 0.07≤H1 / W1≤0.18, and the inductor has both a large inductance and a high quality factor (Q value).

[0070] The technical solution of the present invention will now be described in conjunction with the embodiments and accompanying drawings.

[0071] Example 1

[0072] like Figure 1 and Figure 2 As shown in the figure, an embodiment of this application discloses an inductor 1, including a body 11, two embedded terminals 12 and a coil M13.

[0073] The main body 11 has a top surface 111 and a bottom surface 112 that are arranged opposite to each other, and two side surfaces 113 that are arranged opposite to each other. The relative direction of the top surface 111 and the bottom surface 112 is a first direction Z, and the relative direction of the two side surfaces 113 is a second direction X. The first direction Z and the second direction X intersect.

[0074] Along the second direction X, two embedded terminals 12 are spaced apart on the side of the bottom surface 112 facing the top surface 111. The height of the embedded terminal 12 along the first direction Z is H1, and the width of the embedded terminal 12 along the second direction X is W1, wherein 0.07 ≤ H1 / W1 ≤ 0.18. H1 / W1 is, for example, 0.07, 0.08, 0.09, 0.1, 0.11, 0.12, 0.13, 0.14, 0.15, 0.16, 0.17, or 0.18.

[0075] The coil M13 is disposed within the body 11 and electrically connected to the embedded terminal 12. The coil M13 includes at least one layer of inner electrodes 13, the plane of which is parallel to the plane formed by the first direction Z and the second direction X. At least a portion of the inner electrodes 13 extend between the embedded terminal 12 and the top surface 111.

[0076] In this embodiment, the inner electrode 13 can be ring-shaped. "Ring-shaped" means that the inner electrode 13 forms a ring-shaped outline around a certain center (e.g., the central axis of coil M13), such as a semi-closed ring.

[0077] In this application, on the plane where the inner electrode 13 is located, the two embedded terminals 12 are located on the bottom side. In this way, in order to reduce parasitic capacitance, only the bottom part of the inner electrode 13 needs to avoid the embedded terminals 12, and the rest of the inner electrode 13 can be as close as possible to the outline of the main body 11, thereby expanding the inner area.

[0078] Furthermore, when the height H1 of the embedded terminal 12 along the first direction Z satisfies H1 / W1≤0.18, the height H1 of the embedded terminal 12 along the first direction Z is sufficiently small, providing a large space between the embedded terminal 12 and the top surface 111 for the inner electrode 13 to extend, which is beneficial for increasing the in-circle area of ​​the inner electrode 13. Since the inductance is proportional to the in-circle area of ​​the inner electrode 13, a larger in-circle area of ​​the inner electrode 13 is beneficial for increasing the contribution of a single inner electrode 13 to the inductance. In this way, even without using a single-layer multi-turn wire group, this application can easily achieve the expected inductance, thereby avoiding the Q-value degradation caused by proximity effect, so that the inductor element 1 has both a large inductance and a high Q-value.

[0079] Considering that as the height H1 of the embedded terminal 12 along the first direction Z decreases, the cross-sectional area of ​​the embedded terminal 12 decreases. Since the resistance of the embedded terminal 12 is inversely proportional to its cross-sectional area, the resistance of the embedded terminal 12 increases accordingly, leading to a decrease in the Q value. Based on this, in this application, the width W of the embedded terminal 12 along the second direction X satisfies 0.07 ≤ H1 / W1. At this time, the height H1 of the embedded terminal 12 along the first direction Z is still high enough, the cross-sectional area of ​​the embedded terminal 12 is large enough, the resistance of the embedded terminal 12 is small, and the current transmission loss is also small, which is beneficial to maintaining the inductor 1 at a high Q value.

[0080] Reference Figure 2 , Figure 2 This is a graph showing the relationship between the Q value and H1 / W1 disclosed in Embodiment 1 of this application. The Y-axis represents the Q value of the inductor at 0.5 GHz, and the X-axis represents the H1 / W1 value. It can be seen that the Q value remains at a high level in the range of 0.07≤H1 / W1≤0.18, reflecting that the inductor 1 in this embodiment of the application has a high Q value.

[0081] In summary, when the height H1 of the inner electrode 13 along the first direction Z satisfies 0.07≤H1 / W1≤0.18, the inductor element 1 has both a large inductance and a high quality factor (Q value).

[0082] In some embodiments, referencing the back Figure 1 The inner electrode 13 extends partially between the two embedded terminals 12.

[0083] In this way, a portion of the inner electrode 13 near the bottom surface 112 extends between the two embedded terminals 12, thereby getting as close as possible to the edge of the main body 11, that is, close to the bottom surface 112, which makes the inner area of ​​the inner electrode 13 larger, which is beneficial to increasing the contribution of a single inner electrode 13 to the inductance.

[0084] Reference Figure 3 On the side surface 113, the orthographic projection of the inner electrode 13 and the orthographic projection of the embedded terminal 12 partially overlap, and the overlapping part is the overlapping region A. The orthographic projection area of ​​a single inner electrode 13 on the side surface 113 is S1, and the area of ​​the overlapping region A of a single inner electrode 13 is S2, wherein S2 / S1 < 5%, and S2 / S1 is, for example, 4%, 3%, 2%, or 1%.

[0085] When S2 / S1 < 5%, it indicates that when viewed from the side 113, the overlapping area between the inner electrode 13 and the embedded terminal 12 is small, which is beneficial for the inner electrode 13 to avoid the embedded terminal 12. The non-overlapping part of the inner electrode 13 can be as close as possible to the edge of the main body 11, so that the inner electrode 13 can more easily obtain a larger inner area, thereby further improving the contribution of a single inner electrode 13 to the inductance, which is beneficial to improving the Q value.

[0086] Furthermore, the total number of internal electrodes 13 is n, where n×S2 < 700 square micrometers, and n×S2 is, for example, 600 square micrometers, 500 square micrometers, or 400 square micrometers.

[0087] It should be noted that n is any positive integer, meaning the total number of inner electrodes 13 can be one or more layers. When there are multiple layers of inner electrodes 13, the stacking direction of the multiple inner electrodes 13 is the third direction Y, and the first direction Z, the second direction X, and the third direction Y are perpendicular to each other. Along the third direction Y, multiple inner electrodes 13 are sequentially connected to form a coil M13. Furthermore, the first and last layers of inner electrodes 13 are electrically connected to two embedded terminals 12, respectively.

[0088] When n×S2<700 square micrometers, it indicates that when viewed from the side 113, the overlapping area A between the coil M13 and the embedded terminal 12 is small, and the non-overlapping part of the coil M13 can be as close as possible to the edge of the main body 11 so that the total area of ​​the coil M13 is larger, thereby further improving the inductance and Q value.

[0089] Optionally, the length of each overlapping region A along the first direction Z is L1, and the linewidth of the inner electrode 13 is W2, where L1 < W2.

[0090] When L1 < W2, it indicates that when viewed from the side 113, the overlapping area A between the inner electrode 13 and the embedded terminal 12 is shorter, which is beneficial for the inner electrode 13 to avoid the embedded terminal 12. The non-overlapping part of the inner electrode 13 can be as close as possible to the edge of the main body 11, so that the inner electrode 13 can more easily obtain a larger inner area, thereby further improving the contribution of a single inner electrode 13 to the inductance, which is beneficial to improving the Q value.

[0091] In this embodiment, please refer to the following: Figure 1 and Figure 3 The main body 11 is a hexahedron. Along the third direction Y, the main body 11 also has a front side 114 and a back side 115 that are arranged opposite to each other. The orthographic projection shape of the embedded terminal 12 on the front side 114 is a straight strip.

[0092] In this application, the straight strip-shaped embedded terminal 12 refers to a thin strip shape extending along the second direction X. For example, the orthographic projection shape of the embedded terminal 12 on the front side 114 can be a rectangle, a rectangle with one end curved, or a trapezoid.

[0093] Compared to L-shaped embedded terminals and other embedded terminals, the straight embedded terminal 12 occupies less space along the first direction Z, which is beneficial for the inner electrode 13 to avoid the embedded terminal 12 while also having a larger inner area to increase the contribution of a single inner electrode 13 to the inductance.

[0094] In this embodiment, along the second direction X, the ends of the two embedded terminals 12 that are close to each other both have a chamfered profile 122.

[0095] The chamfered profile 122 can reduce the accumulation of tip charge. Since the inner electrode 13 can be arranged along the chamfered profile 122, it is also beneficial to further increase the inner area of ​​the inner electrode 13 to further enhance the contribution of a single inner electrode 13 to the inductance.

[0096] Optionally, the radius of the chamfer profile 122 is r, where 10 micrometers ≤ r ≤ H1, to effectively reduce tip charge accumulation and effectively increase the in-circle area of ​​the inner electrode 13. Preferably, r = H1.

[0097] Furthermore, the straight-shaped embedded terminal 12 includes a parallel segment 123 and a transition segment 124 connected to each other. The parallel segment 123 is rectangular in shape, extending along the second direction X, and the transition segment 124 is located at the ends of the two embedded terminals 12 closest to each other. A chamfered profile 122 is provided on the transition segment 124. The height H1 of the embedded terminal 12 along the first direction Z refers to the height of the parallel segment 123 along the first direction Z.

[0098] In this embodiment, as Figure 1 As shown, the inner electrode 13 includes a side conductor 131 that extends between the embedded terminal 12 and the top surface 111.

[0099] In other words, the side conductor 131 is the portion of the inner electrode 13 that extends between the embedded terminal 12 and the top surface 111. Since the height H1 of the embedded terminal 12 along the first direction Z is controlled to be H1 / W1≤0.18, the space occupied by the embedded terminal 12 along the first direction Z within the main body 11 is relatively small, so that there is a larger space for the side conductor 131 to extend. The length of the side conductor 131 along the first direction Z will be relatively long, resulting in a larger inner area of ​​the inner electrode 13, and the contribution of a single inner electrode 13 to the inductance is improved.

[0100] Furthermore, the embedded terminal 12 of this application does not extend to the top surface 111, so that the side wire 131 can be as close as possible to the top surface 111, which is beneficial to expanding the inner area of ​​the inner electrode 13.

[0101] Optionally, the side wire 131 extends along the first direction Z. In this case, the side wire 131 is in the shape of a straight strip to better fit the contour of the hexahedral body 11, improve space utilization, and make the coil area of ​​the inner electrode 13 larger.

[0102] Of course, the side conductor 131 can also be a non-linear extension, for example, as... Figure 4 (A), the side conductor 131 can also be a broken line, or as... Figure 4 (B) The side conductor 131 may also include an arc-shaped portion.

[0103] Optionally, along the first direction Z, the length of the side conductor 131 is L2, and the height of the main body 11 is H2, satisfying the following relationship: 0.7 ≤ L2 / H2 ≤ 0.85. In this way, the length L2 of the side conductor 131 is sufficiently long to effectively increase the in-circle area of ​​the inner electrode 13, thereby effectively improving the contribution of a single inner electrode 13 to the inductance. Furthermore, the length L2 of the side conductor 131 is not excessively long, thus providing sufficient gaps between the side conductor 131 and the embedded terminal 12, and between the side conductor 131 and the top surface 111, reducing parasitic capacitance and thus reducing the impact of parasitic capacitance on the Q value, which is beneficial for improving the Q value of the inductor element 1.

[0104] Optionally, along the second direction X, the distance between each side conductor 131 and the nearest side 113 is D0, where 3 micrometers ≤ D0 ≤ 15 micrometers. D0 is, for example, 3 micrometers, 6 micrometers, 9 micrometers, 12 micrometers, or 15 micrometers.

[0105] When 3 micrometers ≤ D0 ≤ 15 micrometers, each side conductor 131 is sufficiently close to the side surface 113 to maximize the inner area of ​​the inner electrode 13, thereby increasing the contribution of a single inner electrode 13 to the inductance. However, each side conductor 131 is still a certain distance from the side surface 113 to effectively avoid the inner electrode 13 being exposed due to cutting misalignment or damage to the main body 11, thereby reducing the risk of short circuit of the inner electrode 13.

[0106] In this embodiment, as Figure 1 As shown, the inner electrode 13 also includes a lower side wire 132, which is connected to one end of the side wire 131 near the embedded terminal 12. The lower side wire 132 extends at least partially along the upper contour 121 of the embedded terminal 12. The upper contour 121 is the side contour of the embedded terminal 12 facing the top surface 111.

[0107] In this way, the lower conductor 132 can maintain a suitable distance from the embedded terminal 12 at each position, and improve the space utilization of the inner electrode 13, making the inner area of ​​the inner electrode 13 larger, thereby making the inductance of the inductor 1 larger and the Q value higher.

[0108] Furthermore, the upper profile 121 extends from the side profile 113 along the second direction X and is close to the center of the main body 11, and the end of the upper profile 121 near the center of the main body 11 bends and extends to the bottom surface 112. For example, the bent portion of the upper profile 121 is rounded or beveled.

[0109] It should be noted that the upper contour 121 can be flat or uneven. The height H1 of the embedded terminal 12 along the first direction refers to the distance between the highest point of the embedded terminal 12 and the bottom surface 112 along the first direction Z. The highest point of the embedded terminal 12 refers to the position of the upper contour 121 closest to the top surface 111.

[0110] Furthermore, the lower conductor 132 includes a first conductor segment 1321 and a second conductor segment 1322. The first conductor segment 1321 is connected to one end of the side conductor 131 near the embedded terminal 12 and extends along the second direction X near the center of the main body 11. The second conductor segment 1322 is connected to one end of the first conductor segment 1321 near the center of the main body 11. The second conductor segment 1322 is also bent relative to the first conductor segment 1321 and close to the bottom surface 112. The center of the main body 11 is the center of the main body 11 along the second direction X.

[0111] In this way, the first conductor segment 1321 and the second conductor segment 1322 match the shape of the upper contour 121, so that the lower wire 132 extends along the upper contour 121 as much as possible and maintains a sufficient distance from the upper contour 121, making the inner area of ​​the inner electrode 13 larger, further increasing the contribution of the single inner electrode 13 to the inductance, and also reducing the parasitic capacitance between the inner electrode 13 and the embedded terminal 12, thereby making the inductance of the inductor element 1 larger and the Q value higher.

[0112] The included angle α between the first conductor segment 1321 and the second conductor segment 1322 is greater than 180°. The second conductor segment 1322 bends downwards relative to the first conductor segment 1321 towards the bottom surface 112, which helps the lower conductor 132 to be as close to the bottom surface 112 as possible, thereby enabling the inner electrode 13 to have more inner electrodes 13.

[0113] As described above, both embedded terminals 12 have chamfered profiles 122 at their ends closest to each other. When the included angle α between the first conductor segment 1321 and the second conductor segment 1322 is greater than 180°, the included angle between the first conductor segment 1321 and the second conductor segment 1322 can be extended along the chamfered profile 122 so that the inner area of ​​the inner electrode 13 can be maximized, thereby increasing the contribution of a single inner electrode 13 to the inductance.

[0114] Furthermore, such as Figure 1 As shown, the lower conductor 132 also includes a third conductor segment 1323, which is connected to one end of the second conductor segment 1322 near the bottom surface 112 and extends along the second direction X away from the connected second conductor segment 1322. The third conductor segment 1323 is located between the two embedded terminals 12.

[0115] As analyzed above, since the second conductor segment 1322 bends downward, the third conductor segment 1323 can just utilize the space between the two embedded terminals 12. Since there is no conductor below the third conductor segment 1323, the third conductor segment 1323 can be as close as possible to the bottom surface 112, so that the entire lower wire 132 extends between the two embedded terminals 12, which is beneficial to further increase the inner area of ​​the inner electrode 13, thereby further enhancing the contribution of the single inner electrode 13 to the inductance.

[0116] It is understood that the third conductor segment 1323 is the part of the inner electrode 13 that extends between the two embedded terminals 12. Therefore, the orthographic projection of the third conductor segment 1323 and the orthographic projection of the embedded terminal 12 partially overlap, and the overlapping part is the aforementioned overlapping area A.

[0117] Optionally, the distance between the third conductor segment 1323 and the bottom surface 112 is D1, satisfying the following relationship: 0.6 ≤ D1 / H1 ≤ 1.6, where D1 / H1 is, for example, 0.6, 0.8, 1, 1.2, 1.4, or 1.6. When the above relationship is satisfied, the inner area of ​​the inner electrode 13 reaches a critical good value, giving the inductor 1 a high Q value. Furthermore, there is still a certain distance between the third conductor segment 1323 and the bottom surface 112 to effectively avoid the exposure of the inner electrode 13 due to cutting misalignment or damage to the main body 11, thereby reducing the short-circuit risk of the inner electrode 13.

[0118] Optionally, the two embedded terminals 12 are spaced apart along the second direction X with a spacing of D2; along the second direction X, the narrowest distance between the third conductor segment 1323 and the embedded terminal 12 is D3, satisfying the following relationship: 0.05≤D3 / D2≤0.1. When the above relationship is satisfied, the parasitic capacitance between the embedded terminal 12 and the inner electrode 13, as well as the in-circle area of ​​the inner electrode 13, reach a critical optimal value, giving the inductor element 1 a high Q value.

[0119] In this embodiment, referencing the return Figure 1 The inner electrode 13 also includes an upper wire 134, which extends along the second direction X. There are two side wires 131, which are spaced apart along the second direction X. The end of each side wire 131 near the top surface 111 is connected to the end of the upper wire 134 along the second direction X.

[0120] In other words, the upper conductor 134 and the two side conductors 131 on both sides form a shape similar to an unclosed square. The outline of the main body 11 is also square. The upper conductor 134 and the side conductors 131 extend along the outline of the main body 11 to improve the space utilization of the inner electrode 13, making the inner area of ​​the inner electrode 13 larger, thereby making the inductance of the inductor element 1 larger and the Q value higher.

[0121] It should be noted that please refer to the following as well. Figure 1 and Figure 5 Since the inner electrode 13 is not a closed pattern (otherwise, the inner electrode 13 would be short-circuited), the inner electrode 13 having an upper conductor 134, a side conductor 131, and a lower conductor 132 means that the projection of all the inner electrodes 13 along the stacking direction of the inner electrodes onto the insulating layer will form as follows: Figure 1 The upper conductor 134, side conductor 131, and lower conductor 132 shown can each inner electrode 13 be selected from any part of the complete pattern formed by the upper conductor 134, side conductor 131, and lower conductor 132. For example, refer to... Figure 5 The inner electrode 13 may include an upper conductor 134, a side conductor 131, and a portion of a lower conductor 132. The portion of the lower conductor 132 may refer to a lower conductor 132 lacking the third conductor segment 1323, or a lower conductor 132 lacking the second conductor segment 1322, or a lower conductor 132 lacking the first conductor segment 1321.

[0122] Specifically, please refer to the following: Figure 1 and Figure 5 The two embedded terminals 12 provide conductivity to the inner electrode 13. When the inner electrode 13 is multi-layered, the multiple inner electrodes 13 are stacked and connected sequentially to form the coil M13. Along the stacking direction of the inner electrodes 13, the first inner electrode 13 is connected to one of the embedded terminals 12, and the last inner electrode 13 is connected to the other embedded terminal 12. Current flows into the coil M13 from one of the embedded terminals 12 and then flows out from the other embedded terminal 12, thus achieving conductivity of the coil M13.

[0123] More in detail, such as Figure 5 As shown, inner electrodes 13 are disposed on insulating layer 14, which separates adjacent inner electrode layers 13. Each inner electrode 13 has an electrical connection terminal 133. Along the stacking direction of the inner electrodes 13, the electrical connection terminals 133 of two connected inner electrode layers 13 are connected. The insulating layer 14 has a conductive material below the electrical connection terminals 133 to enable electrical connection between the separated inner electrode layers 13.

[0124] Furthermore, please refer to the following: Figure 1 and Figure 6 Along the first direction Z, the height of the main body 11 is H2, and its height H1 along the first direction Z of the embedded terminal 12 satisfies the following relationship: 0.08

[0125] ​When the height H1 of the embedded terminal 12 along the first direction Z satisfies 0.08

[0126] Reference Figure 6 , Figure 6 This is a graph showing the relationship between the Q value and H1 / H2 disclosed in Embodiment 1 of this application. The Y-axis represents the Q value of the inductor at 0.5 GHz, and the X-axis represents the H1 / H2 value. It can be seen that at 0.08...

[0127] Optionally, along the first direction Z, the height H2 of the body 11 is ≤ 320 micrometers, so that the inductor element 1 meets the miniaturization requirements. H2 is, for example, 100 micrometers, 150 micrometers, 200 micrometers, 250 micrometers, 300 micrometers, or 320 micrometers. The material of the body 11 can be an insulating material, such as a ceramic-based insulating material or an organic polymer insulating material.

[0128] Optionally, 5 micrometers ≤ H1 ≤ 20 micrometers, where H1 is, for example, 5 micrometers, 10 micrometers, 15 micrometers, or 20 micrometers. When the height H1 of the embedded terminal 12 along the first direction Z meets the above height range, the inductor has both a large inductance and a high quality factor (Q value), and the bonding force between the inductor and the circuit board is also strong when the inductor is mounted on the circuit board. In other words, the inductor achieves high performance while still maintaining high soldering stability.

[0129] Refer to the return Figure 1 In this embodiment, along the second direction X, the ends of the two embedded terminals 12, away from each other, extend to each side surface 113. Embedded terminals 12 are also exposed on the side surfaces. Based on these embedded terminals 12, external terminals (e.g., tin layers) can be electroplated onto the bottom surface 112 and side surface 113 of the main body 11, and the inductor 1 can be soldered onto the circuit board based on these external terminals. The presence of external terminals on the side surfaces further enhances the bonding strength between the inductor 1 and the circuit board.

[0130] Of course, refer to Figure 7 Along the second direction X, the ends of the two embedded terminals 12 that are away from each other can also be spaced apart from the side 113.

[0131] Example 2

[0132] like Figure 8 ​​As shown in the figure, an embodiment of this application discloses an inductor 1, including a body 11, two embedded terminals 12 and a coil M13.

[0133] The main body 11 has a top surface 111 and a bottom surface 112 that are arranged opposite to each other, and two side surfaces 113 that are arranged opposite to each other. The relative direction of the top surface 111 and the bottom surface 112 is a first direction Z, and the relative direction of the two side surfaces 113 is a second direction X. The first direction Z and the second direction X intersect.

[0134] Along the second direction X, two embedded terminals 12 are spaced apart on the side of the bottom surface 112 facing the top surface 111.

[0135] The coil M13 is disposed within the body 11 and electrically connected to the embedded terminal 12. The coil M13 includes at least one layer of inner electrodes 13, the plane of which is parallel to the plane formed by the first direction Z and the second direction X. At least a portion of the inner electrodes 13 extend between the embedded terminal 12 and the top surface 111.

[0136] The inner electrode 13 extends partially between the two embedded terminals 12. The orthographic projection of the inner electrode 13 and the orthographic projection of the embedded terminals 12 partially overlap, and the overlapping portion is an overlapping region. The length of each overlapping region along the first direction Z is L1, and the linewidth of the inner electrode 13 is W2, where L1 < W2.

[0137] When L1 < W2, it indicates that when viewed from the side 113, the overlapping area between the inner electrode 13 and the embedded terminal 12 is shorter, which is beneficial for the inner electrode 13 to avoid the embedded terminal 12. The non-overlapping part of the inner electrode 13 can be as close as possible to the edge of the main body 11, so that the inner electrode 13 can more easily obtain a larger inner area, thereby further improving the contribution of a single inner electrode 13 to the inductance, which is beneficial to improving the Q value.

[0138] Reference Figure 9 , Figure 9 This is a graph showing the relationship between the Q value and L1 / W2 disclosed in Embodiment 2 of this application. The Y-axis represents the Q value of the inductor at 0.5 GHz, and the X-axis represents the value of L1 / W2. It can be seen that the Q value remains at a high level in the range where L1 / W2 < 1, reflecting that the inductor 1 in this embodiment of the application has a high Q value when L1 < W2.

[0139] The rest of the second embodiment is the same as that of the first embodiment, and will not be described in detail here.

[0140] Example 3

[0141] like Figure 10 As shown in the figure, this application discloses an electronic device 100, which includes the inductor 1 in any of the above embodiments.

[0142] It is understandable that the inductor 1 has a high Q value and a large inductance. The high Q value of the inductor 1 results in low energy loss, which can reduce signal attenuation of the electronic device 100 and improve impedance matching accuracy. The large inductance of the inductor 1 can also improve the filtering performance of the electronic device 100.

[0143] For example, electronic device 100 may be a mobile phone, pager, locator, wireless router, or Bluetooth headset. Inductor 1 may be disposed on a circuit board of electronic device 100.

[0144] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An inductor element, characterized in that, include: The main body has a top surface and a bottom surface that are arranged opposite to each other, and two side surfaces that are arranged opposite to each other. The relative direction of the top surface and the bottom surface is a first direction, and the relative direction of the two side surfaces is a second direction. The first direction and the second direction intersect. Two embedded terminals are spaced apart along the second direction on the side of the bottom surface facing the top surface; the height of the embedded terminal along the first direction is H1, and the width of the embedded terminal along the second direction is W1, wherein 0.07 ≤ H1 / W1 ≤ 0.18; and A coil is disposed within the main body and electrically connected to the embedded terminal; the coil includes at least one layer of inner electrodes, the plane of which is parallel to the plane formed by the first direction and the second direction; at least a portion of the inner electrodes extend between the embedded terminal and the top surface; The inner electrode extends partially between the two embedded terminals; on the side surface, the orthographic projection of the inner electrode partially coincides with the orthographic projection of the embedded terminal.

2. The inductor element according to claim 1, characterized in that, On the side surface, the overlapping portion of the orthographic projection of the inner electrode and the orthographic projection of the embedded terminal is the overlapping area. The orthographic projection area of ​​a single inner electrode on the side surface is S1, and the area of ​​the overlapping region of a single inner electrode is S2, wherein S2 / S1 < 5%.

3. The inductor element according to claim 2, characterized in that, The total number of internal electrodes is n, where n×S2 < 700 square micrometers.

4. The inductor element according to claim 1, characterized in that, On the side surface, the orthographic projection of the inner electrode and the orthographic projection of the embedded terminal partially overlap, and the overlapping part is the overlapping area. The length of each overlapping region along the first direction is L1, and the linewidth of the inner electrode is W2, wherein L1 < W2.

5. The inductor element according to claim 1, characterized in that, The main body is a hexahedron, and the main body also has a front and a back side arranged opposite to each other. The orthographic projection shape of the embedded terminal on the front side is a straight strip.

6. The inductor element according to claim 1, characterized in that, Along the second direction, the ends of the two embedded terminals that are close to each other both have a chamfered profile; The radius of the chamfered profile is r, where 10 micrometers ≤ r ≤ H1.

7. The inductor element according to claim 1, characterized in that, The internal electrode includes: Side conductor, which extends between the embedded terminal and the top surface.

8. The inductor element according to claim 7, characterized in that, The side guide wire extends along the first direction; wherein, along the first direction, the length of the side guide wire is L2, and the height of the main body is H2, satisfying the following relationship: 0.7≤L2 / H2≤0.85; And / or, along the second direction, the distance between each of the side conductors and the nearest side is D0, where 3 micrometers ≤ D0 ≤ 15 micrometers.

9. The inductor element according to claim 7, characterized in that, The internal electrode also includes: A lower conductor is connected to one end of the side conductor near the embedded terminal, and the lower conductor extends at least partially along the upper contour of the embedded terminal. The upper contour is the side contour of the embedded terminal facing the top surface.

10. The inductor element according to claim 9, characterized in that, The upper contour extends from the side along the second direction and is close to the center of the body, and one end of the upper contour close to the center of the body bends and extends to the bottom surface; The lower-side conductor includes a first conductor segment and a second conductor segment. The first conductor segment connects one end of the side conductor near the embedded terminal and extends along the second direction to approach the center of the main body. The second conductor segment connects one end of the first conductor segment near the center of the main body, and the second conductor segment is bent relative to the first conductor segment and approaches the bottom surface. Wherein, the center of the main body is the center of the main body along the second direction.

11. The inductor element according to claim 10, characterized in that, The lower-side conductor further includes a third conductor segment. The third conductor segment is connected to one end of the second conductor segment near the bottom surface and extends along the second direction away from the connected second conductor segment. Wherein, the third conductor segment is located between the two embedded terminals.

12. The inductor element according to claim 11, characterized in that, The distance between the third conductor segment and the bottom surface is D1, satisfying the following relational expression: 0.6 ≤ D1 / H1 ≤ 1.6; and / or, The two embedded terminals are arranged at intervals along the second direction and the distance therebetween is D2; along the second direction, the narrowest distance between the third conductor segment and the embedded terminal is D3, satisfying the following relational expression: 0.05 ≤ D3 / D2 ≤ 0.1; and / or, The internal angle α between the first conductor segment and the second conductor segment is greater than 180°.

13. The inductor element according to any one of claims 7 to 12, characterized in that, The internal electrode further includes: An upper-side conductor. The upper-side conductor extends along the second direction. There are two side conductors. The two side conductors are arranged at intervals along the second direction, and one end of each side conductor near the top surface is respectively connected to each end of the upper-side conductor along the second direction.

14. The inductor element according to any one of claims 1 to 12, characterized in that, Along the first direction, the height of the main body is H2, satisfying the following relational expression: 0.08 < H1 / H2 < 0.15; and / or, Along the first direction, the height H2 of the main body is ≤ 320 microns; and / or, 5 microns ≤ H1 ≤ 20 microns.

15. The inductor element according to any one of claims 1 to 12, characterized in that, Along the second direction, one end of each of the two embedded terminals away from each other extends to each side surface.

16. An electronic device, characterized in that, An inductance element according to any one of claims 1 to 15 is included.

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