Semiconductor laser module and method for manufacturing the same

Abstract

The application provides a semiconductor laser module and a preparation method thereof. The semiconductor laser module comprises a plurality of rows of chips and an optical shaping assembly. The optical shaping assembly comprises a spatial beam combining component, and the spatial beam combining component comprises a plurality of transmission beam combining components. Each transmission beam combining component is used for forming a transmission beam from the light beam emitted by the row of chips corresponding to the transmission beam combining component, so as to reduce the coupling loss and improve the photoelectric efficiency. The semiconductor laser module can be used for the beam combining of a plurality of rows of light beams, and the transmission beam combining component has a low manufacturing cost.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a semiconductor laser module and a preparation method thereof. BACKGROUND

[0002] High-power semiconductor lasers have a large number of applications in material processing, pumping solid-state lasers, etc. Most of the existing high-power semiconductor lasers use polarization beam combining method when realizing multi-channel laser fiber coupling, and spatial beam combining mostly uses single-row arrangement or double-row arrangement.

[0003] Polarization beam combining causes the decline of photoelectric efficiency due to the polarization degree of the chip and the coupling loss of the polarization transmission beam combining component, and can only be used for the beam combining of two rows of beams, and the cost is also high. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor laser module and a preparation method thereof, which includes a plurality of chips arranged densely, and the spatial beam combining method used is more efficient, the coupling efficiency is higher, the beam combining of multiple rows of beams is supported, and the cost is lower.

[0005] In one aspect, the present application provides a semiconductor laser module, comprising: a plurality of rows of chips and an optical shaping assembly;

[0006] The plurality of rows of chips are arranged at intervals along a first direction, and each row of chips comprises a plurality of the chips;

[0007] Each row of chips is arranged at intervals in a second direction and is arranged in a stepped manner in a third direction; the chips of different rows are arranged staggered in an output direction; the third direction is perpendicular to a plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the output direction is perpendicular to the second direction;

[0008] The optical shaping assembly comprises a spatial beam combining component; the spatial beam combining component comprises a plurality of transmission beam combining components; each transmission beam combining component forms a transmission beam from the light beams emitted by a row of the chips arranged correspondingly thereto; the light beams emitted by the plurality of rows of the chips are combined in the second direction.

[0009] In one embodiment, the plurality of the chips are arranged at intervals along the output direction in m rows, and each row comprises n chips;

[0010] Each transmission beam combining component comprises n transmission grating light guide plates; the light beams emitted by the n chips in each row form transmission beams through the n transmission grating light guide plates, respectively; the transmission beams formed by the m rows of the chips are combined in the second direction.

[0011] In one embodiment, m is a positive integer greater than 2, n is a positive integer; the spatial beam combining component comprises (m-1) transmissive beam combining components;

[0012] When m is an odd number, the light emitted by the (m+1) / 2th row of the chips is directly emitted without passing through any of the transmissive beam combining components; the light emitted by each of the remaining m-1 rows of the chips passes through one of the m-1 transmissive beam combining components to form a transmissive light beam; the light emitted by the (m+1) / 2th row of the chips and the m-1 transmissive light beams are all combined at the direction of the light emitted by the (m+1) / 2th row of the chips;

[0013] When m is an even number, the light emitted by the m / 2th row of the chips is directly emitted without passing through any of the transmissive beam combining components; the light emitted by each of the remaining m-1 rows of the chips passes through one of the m-1 transmissive beam combining components to form a transmissive light beam; the light emitted by the m / 2th row of the chips and the m-1 transmissive light beams are all combined at the direction of the light emitted by the m / 2th row of the chips, or the light emitted by the m / 2+1th row of the chips and the m-1 transmissive light beams are all combined at the direction of the light emitted by the m / 2+1th row of the chips.

[0014] In one embodiment, m is a positive integer greater than 1, n is a positive integer; the spatial beam combining component comprises m transmissive beam combining components;

[0015] When m is an odd number, the light emitted by each of the m rows of the chips passes through one of the m transmissive beam combining components to form a transmissive light beam; the m transmissive light beams are all combined at the position of the (m+1) / 2th row of the chips;

[0016] When m is an even number, the light emitted by each of the m rows of the chips passes through one of the m transmissive beam combining components to form a transmissive light beam; the m transmissive light beams are all combined at the position between the m / 2th row and the m / 2+1th row.

[0017] In one embodiment, the optical shaping assembly comprises, in sequence along the propagation path of the chip light, a collimating lens, a first mirror and a focusing lens, and the spatial beam combining component is arranged between the first mirror and the focusing lens;

[0018] The number of the collimating lenses and the number of the first mirrors are equal to the number of the chips; the first mirror is used to reflect the collimated light beams emitted by the chips to the transmissive beam combining components;

[0019] Each of the transmission combining components comprises a plurality of transmission grating light guide plates stacked and spaced apart along the third direction, one of the transmission grating light guide plates being used for transmitting the collimated light beam reflected by one of the first mirrors; and a plurality of the transmission combining components are used for transmitting and combining a plurality of collimated light beams in the third direction to form a collimated combined light beam.

[0020] In one embodiment, the distance between the chip in the ith preset position and the chip in the (i+1)th preset position is D1, i is a positive integer, i+1≤m; the angle between the length direction of the transmission combining component and the first direction is , and the length of the transmission combining component is L3, then the following is satisfied: .

[0021] In one embodiment, the number of the transmission grating light guide plates is equal to the number of the chips in the corresponding row; and the collimating lens comprises a fast-axis collimating lens and a slow-axis collimating lens.

[0022] The air gap between two adjacent transmission grating light guide plates in the third direction in the transmission combining component is d1, the focal length of the fast-axis collimating lens is f2, the fast-axis divergence half-angle of the chip is θ2, the step height difference between two adjacent chips in the first direction is H1, and the height of the transmission combining component extending in the third direction is h1, then the following is satisfied: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2.

[0023] 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

[0024] In one embodiment, the width of the slow-axis collimating lens is w1, and the length of the first mirror is L2, then the following is satisfied: .

[0025] In one embodiment, the distance between two adjacent chips in the same row is L1, the slow-axis divergence half-angle of the chip is θ1, the width of the chip is w0, and the focal length of the slow-axis collimating lens is f1, then the following is satisfied: 2tanθ1*f1≤w1≤(L1-w0) / (m-1); f1≥2*D1.

[0026] In one embodiment, further comprising: an optical fiber arranged on the light output side of the optical shaping assembly, the light beam output by the optical shaping assembly being a shaped light beam; and the optical fiber and the shaped light beam are horizontally arranged.

[0027] In one embodiment, further comprising: an upper shell and a lower shell, the plurality of chips and the optical shaping assembly are disposed on a surface of the lower shell, and the optical fiber penetrates a sidewall of the lower shell.

[0028] Another aspect of the present application provides a method for manufacturing a semiconductor laser module, comprising:

[0029] S1, providing a lower shell and fixedly placing a plurality of chips in the lower shell; the plurality of chips are disposed in multiple rows along a first direction, each row comprising a plurality of chips; the chips at corresponding positions of each row are disposed in a second direction and arranged in a stepped manner in a third direction; the chips of different rows are arranged staggered in an output direction; the third direction is perpendicular to a plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the output direction is perpendicular to the second direction;

[0030] S2, fixedly placing an optical shaping assembly and an optical fiber in the lower shell; the optical shaping assembly comprises: a collimating lens, a first mirror, a spatial beam combining component and a focusing lens disposed in sequence on a propagation path of light of the chips; the optical fiber penetrates a sidewall of the lower shell; the spatial beam combining component comprises a plurality of transmission beam combining components; each transmission beam combining component forms a transmission beam from light beams emitted by a row of chips disposed corresponding thereto; the light beams emitted by the plurality of rows of chips are combined in the second direction and transmitted through the optical fiber.

[0031] In one embodiment, the step of fixedly placing the optical shaping assembly and the optical fiber comprises:

[0032] S21, curing the collimating lens and the optical fiber;

[0033] S22, placing the first mirror at a first preset position;

[0034] S23, curing the focusing lens;

[0035] S24, adjusting and curing the transmission beam combining components, wherein the step of curing one transmission beam combining component comprises:

[0036] S2401, providing a transmission grating light guide plate and placing it at a second preset position, and disposing a turning prism behind the transmission grating light guide plate, the left and right positions of the turning prism being aligned with the center of the optical fiber;

[0037] S2402, the light beams emitted by single-channel energization of the chips are reflected to the transmission grating light guide plate via the first mirror, exit into the turning prism, and the completeness of the light exiting from the turning prism is observed and confirmed; if the light spot is not complete, the position and angle of the transmission grating light guide plate need to be adjusted;

[0038] S2403, the position and angle of the transmission grating light guide plate is adjusted, the turning prism is removed, the light beam emitted by the single chip after power-on passes through the focusing lens and is focused into the optical fiber via the transmission grating light guide plate, and is emitted to the power meter via the optical fiber, the power change of the power meter is observed, and it is determined whether the emitted power value reaches the standard power value, if not, the position and angle of the transmission grating light guide plate is fine-tuned until the power value emitted by the optical fiber reaches the maximum emitted power value;

[0039] S2404, according to the steps of S2401-S2403, the position and angle of the transmission grating light guide plate corresponding to each chip in the row of chips is determined, then the position and angle of the transmission grating light guide plate in one of the transmission beam combining components is determined, and so on, starting from the bottom piece, layer by layer, the transmission grating light guide plate is coupled to the top piece; the side surfaces of the plurality of transmission grating light guide plates are vertically solidified, and the plurality of transmission grating light guide plates are fixed on the glass sheet to complete the solidification of the transmission beam combining component.

[0040] The present application has at least the following advantages or benefits:

[0041] 1. The semiconductor laser module is applied to laser spatial beam combining, a plurality of rows of chips are arranged at intervals in a first direction, each row of chips is arranged at intervals in a second direction and is arranged in a stepped manner in a third direction, and the chips in different rows are arranged staggered in an emitting direction. The transmission beam combining component forms a transmission light beam from the light beam emitted by the row of chips corresponding thereto. The light beams emitted by the plurality of rows of chips are combined in the second direction. The inclination angle and specific structural size of the transmission beam combining component can be flexibly adjusted. The light beams emitted by the plurality of rows of chips are all or partially arranged in a spot through the transmission beam combining component, combined in the second direction, and then coupled into an optical fiber through a focusing lens. In the embodiment, the optical shaping assembly of the semiconductor laser module includes a spatial beam combining component, and the spatial beam combining component includes a plurality of transmission beam combining components. Each transmission beam combining component is used to form a transmission light beam from the light beam emitted by the row of chips corresponding thereto, thereby reducing coupling loss and improving photoelectric efficiency; and the semiconductor laser module can be used for beam combining of a plurality of rows of light beams, and the manufacturing cost of the transmission beam combining component is relatively low.

[0042] 2, The main advantages of the semiconductor laser module provided by the application are: 1) from the coupling effect, the integration of multiple rows of chips can be realized, the optical path is shortened, and the problem that the optical path difference between the farthest chip and the nearest chip is large due to too many chips arranged in each row is solved, the longer the optical path of the farthest chip, the lower the output light brightness, and the problem that high temperature is easy to occur in the fusion of the output optical fiber. The output light brightness of the semiconductor laser module provided by the application is higher, and the beam quality is better. 2) From the cost point of view, multiple rows of chips do not need to be polarized and combined, the cost of the transmission film and the reflection film is lower, and the coupling efficiency is higher than that of polarization combination. Multiple chips are arranged more compactly, reducing the cost of the copper heat sink. 3) From the heat dissipation point of view, the chips are arranged alternately and staggered, the distance between adjacent chips is far, the heat dissipation space is larger, and the heat dissipation effect is better.

[0043] 3, Each transmission grating light guide plate independently processes the light beams emitted by the corresponding single chip. N independent transmission grating light guide plates can perform parallel and non-interfering precise shaping on n light beams. For example, each transmission grating light guide plate can also be built-in with a micro-optical structure to collimate, expand, and correct astigmatism of the light beams, thereby laying a solid foundation for subsequent high-quality beam combination.

[0044] 4, In a single row of chips, the optical axes of the n transmission grating light guide plates on the same transmission beam combination component can be accurately aligned with each other through precise mechanical adjustment, so that the n transmission light beams output by them achieve high parallelism and pointing consistency, which is equivalent to completing the parallelization of the light beams in the “one-dimensional” direction. In the beam combination between multiple rows of chips: after the light beams output by each row of chips become highly parallel light beam arrays through the corresponding beam combination components, only a simple angle deflection is needed to make the m parallel light beam arrays precisely overlap and converge in the second direction, thereby realizing spatial beam combination. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the specific embodiments or the prior art of the present application, the drawings needed in the specific embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0046] Figure 1 A schematic diagram of a semiconductor laser module provided by the prior art;

[0047] Figure 2 A perspective view of a semiconductor laser module provided by the embodiment of the present application;

[0048] Figure 3 A top view of a semiconductor laser module provided by the embodiment of the present application;

[0049] Figure 4 This is a schematic diagram of the light propagation of a semiconductor laser module provided in one embodiment of this application;

[0050] Figure 5 A schematic diagram of light propagation of a semiconductor laser module provided in another embodiment of this application;

[0051] Figure 6 This is a schematic diagram of the structure of a transmission beam combining component in a semiconductor laser module according to one embodiment of this application;

[0052] Figure 7 This is a schematic diagram of the beam pattern arrangement of a semiconductor laser module provided in one embodiment of this application.

[0053] Semiconductor laser module 100: Lower housing 101;

[0054] 10 chips, 20 optical shaping components, and 30 optical fibers;

[0055] Collimating lens 21: fast-axis collimating lens 21a, slow-axis collimating lens 21b, first reflecting mirror 22, spatial beam combiner 23, transmission beam combiner 231, transmission grid light guide plate 231a, anti-reflection sheet 24, focusing lens 25, first focusing lens 25a, second focusing lens 25b. Detailed Implementation

[0056] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0057] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0058] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0059] like Figure 1 The existing multi-channel laser fiber 30 coupling technology shown employs a polarization beam combining method, typically involving two rows of optical paths facing each other and coupling to a single fiber 30. However, this application...Figures 2-5 The main advantages of the provided semiconductor laser module 100 are: 1) From the perspective of coupling effect, it can realize the integration of multiple rows of chips 10, ensuring a shorter optical path, and solving the problem of large optical path difference between the farthest and nearest chips 10 caused by too many chips 10 arranged in each row, resulting in lower output brightness due to longer optical path of the farthest chip 10, and high temperature easily generated during the fusion splicing of the output optical fiber 30 at the rear end. The following embodiments of this application and Figures 2-5 The semiconductor laser module 100 provided has higher output light brightness and better beam quality when coupled into the optical fiber 30 (e.g., Figure 7 The diagram shows a schematic of the beam pattern arrangement of a semiconductor laser module 100 according to an embodiment of this application. It can be seen that the beam pattern is neatly arranged, with high brightness and good beam quality. 2) From a cost perspective, multi-row chip 10 beam combining does not require polarization beam combining, resulting in lower costs for the transmission and reflection films, while also achieving higher coupling efficiency than polarization beam combining. The compact arrangement of multiple chips 10 reduces the cost of the copper heat sink. 3) From a heat dissipation perspective, the staggered arrangement of the chips 10, with greater distance between adjacent chips 10, provides more heat dissipation space and better heat dissipation effect.

[0060] Please see Figure 2 and Figure 3 This application provides a semiconductor laser module 100, including: multiple rows of chips 10 and an optical shaping component 20. The multiple rows of chips 10 are spaced apart along a first direction, and each row of chips 10 includes multiple chips 10. Figure 2 This illustrates three rows of chips 10, with each row containing seven chips 10.

[0061] Each row of chips 10 is spaced apart in the second direction and arranged in a stepped manner in the third direction. Chips 10 in different rows are staggered in the light emission direction. The third direction is perpendicular to the plane formed by the first and second directions. The third direction is the height direction of the chip 10, i.e., the fast axis direction of the chip 10. In the plane formed by the first and second directions, the light emission direction is perpendicular to the second direction. The second direction is the slow axis direction of the chip 10, and the third direction is the fast axis direction of the chip 10. The angle between the first and second directions is less than or equal to 90°. When the angle between the first and second directions is 90°, the first direction and the light emission direction are the same direction.

[0062] The optical shaping assembly 20 includes a spatial beam combiner 23. The spatial beam combiner 23 includes multiple transmission beam combiners 231. Each transmission beam combiner 231 forms a transmitted beam from a row of chips 10 corresponding to it. Specifically, one transmission beam combiner 231 corresponds to one row of chips 10; that is, one transmission beam combiner 231 is used to form a transmitted beam from the beams emitted by one row of chips 10 (a row of chips 10 may consist of 5, 6, 7, 8, 9, or other numbers). The beams emitted by multiple rows of chips 10 converge and combine in a second direction. In some embodiments, the light emitted by all rows of chips 10 needs to be transmitted through their respective corresponding transmission beam combiners 231 before being combined. In other embodiments, the light emitted by one row of chips 10 does not pass through the transmission beam combiner 231. The light emitted by other rows of chips 10 needs to be transmitted through their respective corresponding transmission beam combiners 231 before being combined with the emitted light that did not pass through the transmission beam combiner 231.

[0063] In this embodiment, the semiconductor laser module 100 is used for laser spatial beam combining. Multiple rows of chips 10 are spaced apart along a first direction, and each row of chips 10 is spaced apart along a second direction and arranged in a stepped configuration along a third direction. Different rows of chips 10 are staggered in their light emission directions. The transmission beam combining component 231 forms a transmitted beam from the beam emitted by its corresponding row of chips 10. The beams emitted by the multiple rows of chips 10 are converged and combined in the second direction. The tilt angle and specific structural dimensions of the transmission beam combining component 231 can be flexibly adjusted. All or part of the beams emitted by the multiple rows of chips 10 are arranged in a beam pattern by the transmission beam combining component 231, converged and combined in the second direction, and then coupled into the optical fiber 30 via a focusing lens. In this embodiment, the optical shaping component 20 of the semiconductor laser module 100 includes a spatial beam combining component 23, which includes multiple transmission beam combining components 231. Each transmission beam combiner 231 is used to form a transmission beam from a row of chips 10 arranged therewith, thereby reducing coupling loss and improving photoelectric efficiency; and the semiconductor laser module 100 can be used to combine multiple rows of beams, and the manufacturing cost of the transmission beam combiner 231 is low.

[0064] In one embodiment, a plurality of chips 10 are arranged in m rows at intervals along a first direction, with each row comprising n chips 10. Both m and n are positive integers. Each transmission beam combining component 231 includes n spaced-apart transmission grid light guide plates 231a. The light beams emitted by the n chips 10 in each row pass through the n transmission grid light guide plates 231a to form transmitted light beams. The transmitted light beams formed by the m rows of chips 10 converge and combine in a second direction.

[0065] In this embodiment, each transmission grid light guide plate 231a independently processes the beam emitted by its corresponding single chip 10. The n independent transmission grid light guide plates 231a can perform parallel, non-interfering, and precise shaping of the n beams. For example, each transmission grid light guide plate 231a can also incorporate micro-optical structures (such as microlens arrays) to collimate, expand, and correct astigmatism of the beams, laying a solid foundation for subsequent high-quality beam combining.

[0066] On the other hand, through precise mechanical adjustments within a single row of chips 10, the optical axes of the n transmission grid light guide plates 231a on the same transmission beam combiner 231 can be easily and precisely aligned with each other, ensuring that the n transmitted beams output by them achieve a high degree of parallelism and directional consistency, which is equivalent to first completing beam parallelization in the "one-dimensional" direction. Beam combining between multiple rows of chips 10: After the beams output from each row of chips 10 have been transformed into a highly parallel beam array through the corresponding transmission beam combiner 231, a simple angular deflection (possibly achieved by an inclined surface of the transmission beam combiner 231 itself, or by subsequent optical elements) is sufficient to allow the m parallel beam arrays to precisely overlap and merge in the second direction, achieving spatial beam combining.

[0067] In another aspect, in this embodiment, the spaced-apart transmission grid light guide plates 231a provide a physical heat dissipation channel, avoiding heat concentration and mutual interference.

[0068] In one embodiment, m is a positive integer greater than 2, and n is a positive integer. The spatial beam combiner 23 includes (m-1) transmission beam combiners 231. m can be equal to a positive integer such as 3, 4, 5, 6, etc.

[0069] When m is an odd number (m is an odd number greater than 2), the light emitted from the (m+1) / 2th row of chips 10 is emitted directly without passing through any of the transmission beam combining components 231. The light emitted from each of the remaining (m-1) rows of chips 10 passes through one of the (m-1) transmission beam combining components 231 to form a transmitted beam. The light emitted from the (m+1) / 2th row of chips 10 and the (m-1) transmitted beams are all converged and combined in the direction of the light emitted from the (m+1) / 2th row of chips 10. Please refer to [link / reference]. Figure 4 With m=3, the light emitted from the second row of chips 10 is emitted directly without passing through any of the transmission beam combining components 231. The light emitted from each of the remaining two rows (the first and third rows) of chips 10 passes through one of the two transmission beam combining components 231 to form a transmitted beam. The light emitted from the second row of chips 10, along with the two transmitted beams from the first and third rows, converges and combines in the direction of the light emitted from the second row of chips 10.

[0070] When m is an even number (m is an even number greater than 2), the light emitted from the m / 2th row of chips 10 is emitted directly without passing through any of the transmission beam combining components 231. The light emitted from each of the remaining (m-1) rows of chips 10 passes through one of the (m-1) transmission beam combining components 231 to form a transmitted beam. The light emitted from the m / 2th row of chips 10 and the (m-1) transmitted beams are all converged and combined in the direction of the light emitted from the m / 2th row of chips 10, or the light emitted from the m / 2+1th row of chips 10 and the (m-1) transmitted beams are all converged and combined in the direction of the light emitted from the m / 2+1th row of chips 10. Please refer to [link / reference]. Figure 5 and Figure 6 With m=4, the light emitted from the second row of chips 10 is emitted directly without passing through any of the transmission beam combining components 231. The light emitted from each of the remaining three rows of chips 10 passes through one of the three transmission beam combining components 231 to form a transmitted beam. The light emitted from the second row of chips 10 and the three transmitted beams converge and combine in the direction of the light emitted from the second row of chips 10. Figure 5 and Figure 6 All beams converge in the direction of the light emitted from the second row of chips 10. The direction of the light emitted from the second row of chips 10 refers to the direction in which the light is emitted from the second row of chips 10 and shaped and output by the optical shaping component 20. Alternatively, in other embodiments, the light emitted from the third row of chips 10 and the three transmitted beams converge in the direction of the light emitted from the third row of chips 10.

[0071] In this embodiment, m is a positive integer greater than 2. When m is an odd number, such as 3, 5, 7 or other odd numbers, the bundles are grouped into the middle row. When m is an even number, such as 4, 6, 8 or other even numbers, the bundles are grouped into one of the middle rows.

[0072] In one embodiment, m is a positive integer greater than 1, and n is a positive integer. The spatial beam combiner 23 includes m transmission beam combiners 231. m can be equal to a positive integer such as 2, 3, 4, 5, 6, etc.

[0073] When m is an odd number, the light emitted from each row of chips 10 in the m rows passes through one of the m transmission beam combining components 231 to form a transmitted beam. All m transmitted beams converge at the location of the (m+1) / 2th row of chips 10. In one embodiment, m=5, the light emitted from each row of chips 10 in the five rows passes through one of the five transmission beam combining components 231 to form a transmitted beam. All five transmitted beams converge at the location of the third row of chips 10 (not shown).

[0074] When m is an even number, the light emitted from each row of chips 10 in the m rows of chips 10 passes through one of the m transmission beam combining components 231 to form a transmitted beam. The m transmitted beams converge at the midpoint between the m / 2th and m / 2+1th rows. This midpoint can be the very center of the m / 2th and m / 2+1th rows, or a position closer to one of the rows. In one embodiment, m=6, the light emitted from each row of chips 10 in the six rows of chips 10 passes through one of the six transmission beam combining components 231 to form a transmitted beam. The six transmitted beams converge at the midpoint between the third and fourth rows (not shown).

[0075] In this embodiment, m is a positive integer greater than 1. When m is an odd number, such as 3, 5, 7 or other odd numbers, the bundle is placed in the middle row, or in any position between rows. When m is an even number, such as 2, 4, 6, 8 or other even numbers, the bundle is placed in the middle position between the m / 2th row and the m / 2+1th row.

[0076] In one embodiment, the optical shaping component 20 includes a collimating lens 21, a first reflecting mirror 22, and a focusing lens 25 arranged sequentially along the light propagation path of the chip 10, and a spatial beam-combining component 23 disposed between the first reflecting mirror 22 and the focusing lens 25.

[0077] like Figure 2 As shown, the collimating lens 21 includes a fast-axis collimating lens 21a and a slow-axis collimating lens 21b. The focusing lens 25 includes a first focusing lens 25a and a second focusing lens 25b. Through the synergistic effect of multiple lenses, collimation and focusing operations on light can be performed more precisely, further optimizing the light transmission quality and ensuring that light maintains good beam characteristics during propagation, thus meeting the requirements of high-precision light transmission.

[0078] The number of collimating lenses 21 and the number of first reflecting mirrors 22 are equal to the number of chips 10. The first reflecting mirrors 22 are used to reflect the light beam emitted from the chip 10 after being collimated by the collimating lenses 21 to the transmission beam combining component 231.

[0079] Each transmission beam combiner 231 includes a plurality of transmission grid light guide plates 231a stacked and spaced along a third direction. One transmission grid light guide plate 231a is used to transmit a collimated light beam reflected by a first reflector 22. The plurality of transmission beam combiners 231 are used to transmit and combine a plurality of collimated light beams located in a third direction to form a collimated beam combiner.

[0080] In this embodiment, the light propagation path includes: a collimating light path (the light emitted by chip 10 is collimated by collimating lens 21), a first reflection light path (the first reflecting mirror 22 reflects the collimated light at a preset angle, which can be adjusted according to design requirements), a transmission and beam combining light path (one transmission beam combining component 231 in the spatial beam combining component 23 transmits and combines the light emitted by multiple chips 10 in a row of chips 10; the different transmission beam combining components 231 are placed in different positions to transmit and combine the light emitted by different rows of chips 10), and a focusing light path (the focusing lens 25 focuses the beam after transmission and beam combining). This phased and targeted light path design can precisely control and guide the light, enabling the light to propagate efficiently along the expected path, ensuring the accuracy and efficiency of light transmission.

[0081] In one embodiment, an anti-reflection plate 24 is further included in the light propagation path between the transmission beam combiner 231 and the focusing lens 25. The anti-reflection plate 24 blocks light returning from the optical fiber 30 from reaching the chip 10 and causing it to malfunction. By placing the anti-reflection plate 24 in the light propagation path, the stability and reliability of the chip 10's operation are improved, the chip 10's lifespan is extended, and failures and maintenance costs caused by light return are reduced.

[0082] In one embodiment, the distance between the chip 10 at the preset position in the i-th row and the chip 10 at the corresponding preset position in the (i+1)-th row is D1, where i is a positive integer and i+1 ≤ m. The angle between the length extension direction of the transmission beam combining component 231 and the second direction... If the length of the transmission beam combiner 231 is L3, then the following conditions are met: .

[0083] This embodiment defines the design requirements for the length of the transmission beam combining component 231, the angle between its length extension direction and the second direction, and the spacing between the chips 10 at preset positions in the i-th row and the chips 10 at corresponding preset positions in the (i+1)-th row. In this embodiment, a reasonable tilt angle can reduce unnecessary optical phenomena such as reflection and scattering of light during the transmission beam combining process, reduce light energy loss, and prevent stray light from interfering with the chips 10 or other optical components, thus ensuring the quality of light transmission and the stable operation of the chips 10.

[0084] In one embodiment, the number of transmission grid light guide plates 231a is equal to the number of chips 10 in a corresponding row. The collimating lens 21 includes a fast-axis collimating lens 21a and a slow-axis collimating lens 21b.

[0085] In the transmission beam combining component 231, the air gap between two adjacent transmission grid light guide plates 231a along the third direction is d1, the focal length of the fast axis collimating lens 21a is f2, the fast axis divergence half angle of the chip 10 is θ2, the step height difference between two adjacent chips 10 along the first direction is H1, and the height of the transmission beam combining component 231 extending along the third direction is h1. Then, the following conditions are met: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2;

[0086] 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

[0087] In this embodiment, the air gap requirement of the transmission beam combiner 231 is defined by 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2, meaning the path of the collimated beam in the middle must be wider than the collimated beam it passes through, while leaving space for the collimated beams on both sides. The refraction path requirement of the beams on both sides of the transmission beam combiner 231 is defined by 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1), meaning the path of the collimated beams on both sides must be wider than the collimated beam they pass through, while leaving space for the collimated beam in the middle.

[0088] In one embodiment, the width of the slow-axis collimating lens 21b is w1, and the length of the first reflecting mirror 22 is L2, then the following conditions are met: .

[0089] In this embodiment, through The limitation can prevent interference between the first reflecting mirror 22 and the slow-axis collimating lens 21b, avoid mutual interference between components leading to optical system failure or performance degradation, and ensure that its size is sufficient to reflect all light rays, guaranteeing the integrity of optical signal transmission and reflection process.

[0090] In one embodiment, the spacing between two adjacent chips 10 in the same row is L1, the slow-axis divergence half-angle of chip 10 is θ1, the width of chip 10 is w0, and the focal length of the slow-axis collimating lens 21b is f1. Then, the following conditions are met: 2tanθ1*f1≤w1≤(L1-w0) / (m-1). f1≥2*D1.

[0091] In this embodiment, by limiting 2tanθ1*f1≤w1≤(L1-w0) / (m-1), interference and light path obstruction caused by the arrangement of the slow-axis collimating lens 21b and the chip 10 can be prevented, and the size of the slow-axis collimating lens 21b can be used to collimate all light rays. By limiting f1≥2*D1, the focal length of the slow-axis collimating lens 21b can be specified, so that the position of the slow-axis collimating lens 21b is located on the other side of the chip 10, without affecting the arrangement of the chip 10.

[0092] In one embodiment, the optical fiber 30 is further included, disposed on the light-emitting side of the optical shaping component 20, and the light beam transmitted through the optical shaping component 20 is a shaped beam. The optical fiber 30 and the shaped beam are horizontally arranged.

[0093] In this embodiment, when the beam adjusted by the optical shaping component 20 is aligned with the end face of the optical fiber 30, the beam can enter the optical fiber 30 with extremely low loss, greatly improving the coupling efficiency, making more laser power available and reducing energy waste.

[0094] In one embodiment, the system further includes an upper housing (not shown) and a lower housing 101, with multiple chips 10 and optical shaping components 20 disposed on the surface of the lower housing 101, and an optical fiber 30 penetrating the sidewall of the lower housing 101. In this embodiment, the upper housing and lower housing 101 may be made of copper tubing to reduce the production cost of the semiconductor laser module 100.

[0095] In a specific embodiment: such as Figure 3 As shown, the horizontal spacing between two adjacent chips 10 in the second direction is set to 4 mm, and the vertical spacing between two adjacent chips 10 in the plane perpendicular to the second direction is set to 6 mm. The step height difference between the first chip 10 in the first row and the first chip 10 in the second row in the third direction is 0.42 mm. The step height difference between the first chip 10 in the second row and the first chip 10 in the third row in the third direction is also 0.42 mm. The slow-axis divergence half-angle of the chip 10 is 4°, the fast-axis divergence half-angle of the chip 10 is 24°, the heat sink width of the chip 10 is 4 mm, the number of chips 10 in each row is 7, and the step height difference between the first chip 10 and the 7th chip 10 is 1.26 mm. The focal length of the slow-axis collimating lens 21b is 13 mm, the focal length of the fast-axis collimating lens 21a is 0.36 mm, the width of the slow-axis collimating lens 21b is 3.5 mm, and the length of the first reflecting mirror 22 is 5 mm. The air gap between the two transmission beam combining components 231 (transmission prisms) is 0.84 mm. Each transmission beam combining component 231 contains a transmission grid light guide plate 231a, each piece of which is 0.42 mm thick. These plates are stacked on top of each other, leaving a 0.42 mm air gap in between. Each transmission grid light guide plate 231a is made of quartz, with a length of 19.5 mm and a width of 9 mm. Both transmission beam combining components 231 are placed at a 45° angle, but their tilt directions are different (i.e., one transmission beam combining component 231 is tilted at a 45° angle relative to a second direction, and the other is tilted at a 45° angle relative to the light emission direction). The two transmission beam combining components 231 transmit the first and third rows of light beams respectively, while the air gap in the transmission grid light guide plate 231a transmits the second row of light beams.

[0096] This application also includes a method for fabricating a semiconductor laser module 100, comprising:

[0097] S1, a lower housing 101 is provided, and multiple chips 10 are fixedly placed in the lower housing 101. The multiple chips 10 are arranged in multiple rows at intervals along a first direction, with each row including multiple chips 10. The chips 10 at corresponding positions in each row are arranged at intervals along a second direction and in a stepped arrangement along a third direction. Chips 10 in different rows are staggered in the light emission direction. The third direction is perpendicular to the plane formed by the first and second directions. Within the plane formed by the first and second directions, the light emission direction is perpendicular to the second direction. In this step, the arrangement of the chips 10 in the lower housing 101 can be implemented according to the dimensional design of the lower housing 101 during manufacturing.

[0098] S2, an optical shaping assembly 20 and an optical fiber 30 are fixedly placed in the lower housing 101. The optical shaping assembly 20 includes a collimating lens 21, a first reflecting mirror 22, a spatial beam combiner 23, and a focusing lens 25, arranged sequentially along the light propagation path of the chip 10. The optical fiber 30 passes through the side wall of the lower housing 101. The spatial beam combiner 23 includes multiple transmission beam combiners 231. Each transmission beam combiner 231 forms a transmission beam from the light emitted by a row of chips 10 corresponding to it. The light beams emitted by multiple rows of chips 10 are converged and bundled in a second direction and transmitted through the optical fiber 30.

[0099] In this embodiment, the spatial beam combining component 23 includes multiple transmission beam combining components 231. The tilt angle and specific structural dimensions of the transmission beam combining components 231 can be flexibly adjusted. Each transmission beam combining component 231 is used to form a transmitted beam from a row of chips 10 arranged corresponding to it, thereby reducing coupling loss and improving photoelectric efficiency; and the semiconductor laser module 100 can be used to combine multiple rows of beams, and the manufacturing cost of the transmission beam combining component 231 is low.

[0100] In one embodiment, the step of fixing the optical shaping component 20 and the optical fiber 30 includes:

[0101] S21, solidify the collimating lens 21 and the optical fiber 30. In this step, the collimating lens 21 includes a fast-axis collimating lens 21a disposed near the light output port of the chip 10, and a slow-axis collimating lens 21b disposed at a certain distance from the fast-axis collimating lens 21a. The fast-axis collimating lens 21a and the slow-axis collimating lens 21b are used to collimate the light emitted from the chip 10 in a fast-axis manner and in a slow-axis manner, respectively. The fast-axis collimating lens 21a and the slow-axis collimating lens 21b are fixedly disposed at the bottom of the lower housing 101. The optical fiber 30 in this step is disposed on the side wall of the lower housing 101 and extends outward through the lower housing 101.

[0102] S22, the first reflector 22 is placed in a first preset position. Specifically, this includes: energizing the single-channel chip 10, placing the first reflector 22 in the first preset position, and adjusting the pitch angle of the first reflector 22. Once the pitch angle of the first reflector 22 meets the preset requirements, the adhesive on the first reflector 22 is applied and cured. The position setting of the first reflector 22 must ensure that the centroid coordinates of the beam analyzer remain unchanged in both the near-field and far-field positions; then, the coupling of the first reflector 22 is complete.

[0103] S23, Fix the focusing lens 25. In this step, when fixing the focusing lens 25, it is essential to ensure that the beam does not shift horizontally or vertically. Specific steps include: aligning the output end of the fiber optic cable 30 with the power meter; providing an aperture stop and placing it between the incident end face of the fiber optic cable 30 and the focusing lens 25, ensuring that the center of the aperture stop corresponds to the center of the fiber optic cable 30, thereby achieving the alignment of the focusing lens 25.

[0104] S24, Adjust and solidify the transmission beam combiner 231, wherein the step of solidifying a transmission beam combiner 231 includes:

[0105] S2401 provides a transmission grid light guide plate 231a, which is placed in a second preset position, and a deflection prism is set behind the transmission grid light guide plate 231a, with the left and right positions of the deflection prism aligned with the center of the optical fiber 30.

[0106] S2402, the beam emitted by the single-channel chip 10 when powered on is reflected by the first reflector 22 to the transmission grid light guide plate 231a and then emitted into the deflection prism. Observe and confirm whether the light emitted from the deflection prism is complete. If the light spot is incomplete, the position and angle of the transmission grid light guide plate 231a need to be adjusted.

[0107] S2403, After the position and angle of the transmission grid light guide plate 231a are adjusted, the deflection prism is removed. The beam emitted by the single-channel chip 10 after being powered on is focused into the optical fiber 30 through the focusing lens 25 via the transmission grid light guide plate 231a. It is then emitted to the power meter via the optical fiber 30. The power change of the power meter is observed to determine whether the emitted power value reaches the standard power value. If the standard power value is not reached, the position and angle of the transmission grid light guide plate 231a are finely adjusted until the power value emitted by the optical fiber 30 reaches the maximum emitted power value.

[0108] S2404, following steps S2401-S2403, the position and angle of the transmission grid light guide plate 231a corresponding to each chip 10 in a row of chips 10 are determined. This determines the position and angle of one transmission grid light guide plate 231a in a transmission beam combining component 231. This process is repeated, starting from the bottommost chip, layer by layer, coupling to the topmost transmission grid light guide plate 231a. Glass sheets are vertically cured on the sides of the multiple transmission grid light guide plates 231a, fixing the multiple transmission grid light guide plates 231a to the glass sheets to complete the curing of one transmission beam combining component 231.

[0109] In this embodiment, the adjustment and curing processes of the collimating lens 21, the first reflecting mirror 22, the transmission beam combiner 231, the solidified focusing lens 25, and the optical fiber 30 are refined. After one transmission beam combiner 231 is cured, one or more other transmission beam combiners 231 are further cured according to the methods described in S2401-S2404 above. This allows each transmission beam combiner 231 to form a transmitted beam from the beam emitted by its corresponding row of chips 10, thereby reducing coupling loss and improving photoelectric efficiency. Furthermore, the semiconductor laser module 100 can be used to combine multiple rows of beams, and the manufacturing cost of the transmission beam combiner 231 is reduced.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A semiconductor laser module, comprising: m-row chip (10) and optical shaping component (20); m rows of chips (10) are spaced apart along a first direction, and each row of chips (10) includes n chips (10). Its features are, Each row of chips (10) is spaced apart in the second direction and arranged in a stepped manner in the third direction; the chips (10) in different rows are staggered in the light emission direction; the third direction is perpendicular to the plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the light emission direction is perpendicular to the second direction; The optical shaping component (20) includes a spatial beam combiner (23); the spatial beam combiner (23) includes a plurality of transmission beam combiners (231); the transmission beam combiner (231) forms a transmission beam from the beam emitted by a row of chips (10) arranged therecorresponding to it; Each of the transmission beam combining components (231) includes n transmission grid light guide plates (231a); the light beams emitted by the n chips (10) in each row are respectively transmitted through the n transmission grid light guide plates (231a) to form transmission beams. The transmitted light beams formed by the m-row of chips (10) converge and combine in the second direction.

2. The semiconductor laser module according to claim 1, characterized in that, m is a positive integer greater than 2, and n is a positive integer; the spatial beam combining component (23) includes m-1 transmission beam combining components (231). When m is an odd number, the light emitted by the (m+1) / 2th row of chips (10) is emitted directly without passing through any of the transmission beam combining components (231); the light emitted by each row of chips (10) in the remaining m-1 rows passes through one of the m-1 transmission beam combining components (231) to form a transmission beam; the light emitted by the (m+1) / 2th row of chips (10) and the m-1 transmission beams are all converged and combined in the direction of the light emitted by the (m+1) / 2th row of chips (10); When m is an even number, the light emitted by the chip (10) in the m / 2th row is emitted directly without passing through any of the transmission beam combining components (231); the light emitted by each row of chips (10) in the remaining m-1 rows passes through one of the transmission beam combining components (231) in the m-1 rows to form a transmission beam; the light emitted by the chip (10) in the m / 2th row and the m-1 transmission beams are both converged and combined in the direction of the light emitted by the chip (10) in the m / 2th row, or the light emitted by the chip (10) in the m / 2+1th row and the m-1 transmission beams are both converged and combined in the direction of the light emitted by the chip (10) in the m / 2+1th row.

3. The semiconductor laser module according to claim 1, characterized in that, m is a positive integer greater than 1, and n is a positive integer; the spatial beam combining component (23) includes m transmission beam combining components (231). When m is an odd number, the light emitted by each row of chips (10) in the m rows passes through one of the m transmission beam combining components (231) to form a transmission beam; the m transmission beams are all converged and combined at the position of the (m+1) / 2th row of chips (10). When m is an even number, the light emitted by each row of chips (10) in the m rows of chips (10) passes through one of the m transmission beam combining components (231) to form a transmission beam; the m transmission beams converge and combine at the middle position of the m / 2th row and the m / 2+1th row.

4. The semiconductor laser module according to any one of claims 1-3, characterized in that, The optical shaping component (20) includes a collimating lens (21), a first reflecting mirror (22) and a focusing lens (25) arranged sequentially along the light propagation path of the chip (10), and the spatial beam combining component (23) is disposed between the first reflecting mirror (22) and the focusing lens (25). The number of collimating lenses (21) and the number of first reflectors (22) are equal to the number of chips (10); the first reflector (22) is used to reflect the light beam emitted by the chip (10) after being collimated by the collimating lens (21) to the transmission beam combining component (231). Each of the transmission beam combining components (231) includes a plurality of transmission grid light guide plates (231a) stacked and spaced along the third direction. One of the transmission grid light guide plates (231a) is used to transmit a collimated light beam reflected by one of the first reflectors (22). The plurality of transmission beam combining components (231) are used to transmit and combine a plurality of collimated light beams located in the third direction to form a collimated beam combining light.

5. The semiconductor laser module according to claim 4, characterized in that, The distance between the chip (10) at the preset position in the i-th row and the chip (10) at the corresponding preset position in the (i+1)-th row is D1, where i is a positive integer and i+1≤m; the angle between the length extension direction of the transmission beam combining component (231) and the second direction is If the length of the transmission beam combiner (231) is L3, then the following condition is met: .

6. The semiconductor laser module according to claim 4, characterized in that, The number of the transmission grid light guide plates (231a) is equal to the number of the corresponding row of chips (10); the collimating lens (21) includes: a fast-axis collimating lens (21a) and a slow-axis collimating lens (21b). The air gap between two adjacent transmission grid light guide plates (231a) along the third direction in the transmission beam combining component (231) is d1, the focal length of the fast axis collimating lens (21a) is f2, the fast axis divergence half angle of the chip (10) is θ2, the step height difference between two adjacent chips along the first direction is H1, and the height of the transmission beam combining component (231) extending along the third direction is h1. Then, the following conditions are met: 2*f2*tanθ2≤d1≤m*H1-2*(m-1)*f2*tanθ2; 2*f2*tanθ2≤h1≤(m*H1-2*f2*tanθ2) / (m-1).

7. The semiconductor laser module according to claim 6, characterized in that, The width of the slow-axis collimating lens (21b) is w1, and the length of the first reflecting mirror (22) is L2, then the following conditions are met: .

8. The semiconductor laser module according to claim 7, characterized in that, The distance between two adjacent chips (10) in the same row is L1, the slow axis divergence half angle of the chip (10) is θ1, the width of the chip (10) is w0, and the focal length of the slow axis collimating lens (21b) is f1. Then the following conditions are met: 2tanθ1*f1≤w1≤(L1-w0) / (m-1); f1≥2*D1.

9. The semiconductor laser module according to claim 4, characterized in that, Also includes: An optical fiber (30) is disposed on the light-emitting side of the optical shaping component (20), and the light beam transmitted through the optical shaping component (20) is a shaped beam; The optical fiber (30) is positioned horizontally with the shaping beam.

10. The semiconductor laser module according to claim 9, characterized in that, Also includes: An upper housing and a lower housing (101) are provided, a plurality of the chips (10) and the optical shaping assembly (20) are disposed on the surface of the lower housing (101), and the optical fiber (30) penetrates the sidewall of the lower housing (101).

11. A method for fabricating a semiconductor laser module, characterized in that, include: S1, a lower housing (101) is provided and a plurality of chips (10) are fixedly placed in the lower housing (101); the plurality of chips (10) are arranged in m rows at intervals along a first direction, each row including n chips (10); the chips (10) at corresponding positions in each row are arranged at intervals in a second direction and in a stepped arrangement in a third direction; the chips (10) in different rows are staggered in the light emission direction; the third direction is perpendicular to the plane formed by the first direction and the second direction; in the plane formed by the first direction and the second direction, the light emission direction is perpendicular to the second direction; S2, an optical shaping component (20) and an optical fiber (30) are fixedly placed in the lower housing (101); the optical shaping component (20) includes: a collimating lens (21), a first reflecting mirror (22), a spatial beam combiner (23) and a focusing lens (25) arranged sequentially on the propagation path of the light from the chip (10); the optical fiber (30) passes through the side wall of the lower housing (101); the spatial beam combiner (23) includes multiple transmission beam combiners (231); each transmission beam combiner (231) forms a transmission beam from the light emitted by a row of chips (10) arranged corresponding to it; wherein, each transmission beam combiner (231) includes n transmission grid light guide plates (231a); the light beams emitted by the n chips (10) in each row respectively form transmission beams through the n transmission grid light guide plates (231a); the transmission beams formed by the m rows of chips (10) converge and bundle in the second direction and are transmitted through the optical fiber (30).

12. The method for fabricating a semiconductor laser module according to claim 11, characterized in that, in, The steps for fixing and placing the optical shaping assembly (20) and the optical fiber (30) include: S21, solidify collimating lens (21) and optical fiber (30); S22, the first reflector (22) is placed in a first preset position; S23, solidify the focusing lens (25); S24, Adjust and solidify the transmission beam combiner (231), wherein the step of solidifying one of the transmission beam combiners (231) includes: S2401, a transmissive grid light guide plate (231a) is provided, which is placed in a second preset position, and a deflection prism is provided behind the transmissive grid light guide plate (231a), with the left and right positions of the deflection prism aligned with the center of the optical fiber (30). S2402, the light beam emitted by the single-channel chip (10) is reflected by the first reflector (22) to the transmission grid light guide plate (231a) and then emitted into the deflection prism. Observe and confirm whether the light emitted from the deflection prism is complete. If the light spot is incomplete, the position and angle of the transmission grid light guide plate (231a) need to be adjusted. S2403, After the position and angle of the transmission grid light guide plate (231a) are adjusted, the turning prism is removed. The light beam emitted by the single-channel chip (10) after being powered on is focused into the optical fiber (30) through the focusing lens (25) via the transmission grid light guide plate (231a), and then emitted to the power meter via the optical fiber (30). The power change of the power meter is observed, and it is determined whether the emitted power value reaches the standard power value. If the standard power value is not reached, the position and angle of the transmission grid light guide plate (231a) are finely adjusted until the power value emitted by the optical fiber (30) reaches the maximum emitted power value. S2404, following the steps of S2401-S2403, determine the position and angle of the transmission grid light guide plate (231a) corresponding to each chip (10) in a row of chips (10), and then determine the position and angle of one of the transmission grid light guide plates (231a) in a transmission beam combining component (231). In this way, starting from the bottommost piece, layer by layer, the transmission grid light guide plates (231a) are stacked and coupled to the topmost piece. A glass sheet is vertically cured on the side of the multiple transmission grid light guide plates (231a) to fix the multiple transmission grid light guide plates (231a) on the glass sheet, so as to complete the curing of a transmission beam combining component (231).

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