Light emitting diode chip set, display backlight module and illumination module

Abstract

The embodiment of the invention provides a light-emitting diode chip set, a display backlight module and an illumination module, and relates to the technical field of semiconductors, the light-emitting diode chip set generates white light and comprises at least one multi-wavelength chip, in the multi-wavelength chip, a first light-emitting layer generates light of at least one wave band in an electroluminescence mode, and a second light-emitting layer generates light of at least one wave band in an electroluminescence mode. The second light-emitting layer is excited to generate light of at least two wave bands; or, the first light-emitting layer generates light of at least two wave bands in an electroluminescent mode, and excites the second light-emitting layer to generate light of one wave band. The number of wavelengths contained in the light of each wave band is larger than or equal to 1 and smaller than or equal to 10. The chip set can break through the limitation of a traditional white light scheme (blue chips + yellow fluorescent powder or blue chips + green fluorescent powder + red fluorescent powder), the reliability is improved, the service life is prolonged, and a single fluorescence-free multi-wavelength chip (at least comprising five color wavebands of blue, cyan, green, yellow and red) can form a full spectrum.

Description

[0001] The present application claims priority to the Chinese patent application No. 202411149895.5, filed on August 20, 2024, and entitled "Light emitting diode chip set, display backlight module and lighting module", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of semiconductor, in particular to a light emitting diode chip set, a display backlight module and a lighting module. BACKGROUND

[0003] Light emitting diode (LED) is widely used in indication, display, decoration, lighting and other fields because of its energy saving and environmental protection. The energy consumption of white light LED is only 1 / 8 of that of incandescent lamp and 1 / 2 of that of fluorescent lamp. The service life of white light LED can be up to 100,000 hours, and it can also realize mercury-free and easy recycling, which is of great significance to environmental protection and energy saving. White light LED is usually obtained by covering phosphor on single-wavelength chip, which has the problems of low color rendering index, narrow color gamut, complex process, poor reliability and short service life. SUMMARY

[0004] The present application provides a light emitting diode chip set, a display backlight module and a lighting device, which can improve the color rendering index, the color gamut, the reliability and the service life.

[0005] In a first aspect, the present application provides a light emitting diode chip set, which generates white light, comprising at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer and a first light emitting layer and a second light emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light emitting layer being located on the side of the second light emitting layer close to the P-type semiconductor layer.

[0006] The first light emitting layer generates at least one wavelength band of light in an electroluminescent manner, and the light generated by the first light emitting layer excites the second light emitting layer to generate at least two wavelength bands of light, each wavelength band of light containing a wavelength number greater than or equal to 1 and less than or equal to 10.

[0007] There is a hole isolation region between the first light emitting layer and the second light emitting layer.

[0008] In a second aspect, the embodiments of the present application provide a light-emitting diode chip set for generating white light, comprising at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light-emitting layer being located on a side of the second light-emitting layer close to the P-type semiconductor layer.

[0009] The first light-emitting layer generates light of at least two wavebands in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of one waveband, each of the wavebands containing a wavelength number greater than or equal to 1 and less than or equal to 10.

[0010] The first light-emitting layer and the second light-emitting layer have a hole isolation region therebetween.

[0011] In a third aspect, the embodiments of the present application provide a display backlight module, comprising a circuit board and the light-emitting diode chip set as described above, the light-emitting diode chip set being arranged on the circuit board and electrically connected to the circuit board.

[0012] In a fourth aspect, the embodiments of the present application provide a lighting device, comprising a circuit board and the light-emitting diode chip set as described above, the light-emitting diode chip set being arranged on the circuit board and electrically connected to the circuit board.

[0013] The light-emitting diode chip set, the display backlight module, and the lighting device in the embodiments of the present application can generate white light. The light-emitting diode chip set comprises at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light-emitting layer being located on a side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer and the second light-emitting layer have a hole isolation region therebetween. The first light-emitting layer generates light of at least one waveband in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least two wavebands; or the first light-emitting layer generates light of at least two wavebands in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of one waveband. In this way, the first light-emitting layer electroluminesces, the second light-emitting layer photoluminesces, the multi-wavelength chip has two forms of electroluminescence and photoluminescence, the spectrum is stable and does not fluctuate with current change, and the external quantum efficiency is higher. At the same time, the light-emitting diode chip set can flexibly generate white light and can provide multiple white light schemes to break through the blockade of traditional white light schemes.

[0014] The number of wavelengths contained in each waveband is greater than or equal to 1 and less than or equal to 10, and the waveband, the number of wavelengths and the specific wavelengths can be selected as required to form white light mixed with two or more wavelengths, to form white light closer to sunlight, to obtain higher visibility in lighting and higher color gamut in display. The light-emitting diode chip group driving mode is simple, the packaging process is simple, the control mode is simple, the cost is easy to control, full-spectrum illumination spectrum can be easily obtained, and the light power ratio can be designed according to different requirements, so that the light power ratio of the multiple wavelengths generated by the multiple wavelength chips is consistent with the required light power ratio. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0016] Figure 1 It is a schematic diagram of the lamp bead in the embodiment of the present application;

[0017] Figure 2 It is a schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0018] Figure 3 It is another schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0019] Figure 4 It is the first schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0020] Figure 5 It is the second schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0021] Figure 6 It is the third schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0022] Figure 7 It is the fourth schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0023] Figure 8 It is the fifth schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0024] Figure 9 It is the sixth schematic diagram of the light-emitting diode chip group in the embodiment of the present application;

[0025] Figure 10A seventh schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0026] Figure 11 An eighth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0027] Figure 12 A ninth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0028] Figure 13 A tenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0029] Figure 14 An eleventh schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0030] Figure 15 A twelfth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0031] Figure 16 A thirteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0032] Figure 17 A fourteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0033] Figure 18 A fifteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0034] Figure 19 A sixteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0035] Figure 20 A seventeenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0036] Figure 21 An eighteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0037] Figure 22 A nineteenth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0038] Figure 23 A twentieth schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0039] Figure 24 A twenty first schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0040] Figure 25 A twenty second schematic diagram of a light emitting diode chip set in embodiments of the present application;

[0041] Figure 26 A twenty-third embodiment of a light emitting diode chip set in the present application;

[0042] Figure 27 A twenty-fourth embodiment of a light emitting diode chip set in the present application;

[0043] Figure 28 A twenty-fifth embodiment of a light emitting diode chip set in the present application;

[0044] Figure 29 A twenty-sixth embodiment of a light emitting diode chip set in the present application;

[0045] Figure 30 A twenty-seventh embodiment of a light emitting diode chip set in the present application;

[0046] Figure 31 A twenty-eighth embodiment of a light emitting diode chip set in the present application;

[0047] Figure 32 A twenty-ninth embodiment of a light emitting diode chip set in the present application;

[0048] Figure 33 A thirtieth embodiment of a light emitting diode chip set in the present application;

[0049] Figure 34 A thirty-first embodiment of a light emitting diode chip set in the present application;

[0050] Figure 35 A thirty-second embodiment of a light emitting diode chip set in the present application;

[0051] Figure 36 A thirty-third embodiment of a light emitting diode chip set in the present application;

[0052] Figure 37 A thirty-fourth embodiment of a light emitting diode chip set in the present application;

[0053] Figure 38 A thirty-fifth embodiment of a light emitting diode chip set in the present application;

[0054] Figure 39 A first embodiment of a first layer and a second layer in the present application;

[0055] Figure 40 A second embodiment of a first layer and a second layer in the present application;

[0056] Figure 41 A third schematic diagram of the first and second layers in the embodiments of the present application;

[0057] Figure 42 A schematic diagram of a quantum well in the embodiments of the present application;

[0058] Figure 43 A schematic diagram of a multi-quantum well in the embodiments of the present application;

[0059] Figure 44 A schematic diagram of a light emitting principle of a multi-wavelength chip in the embodiments of the present application;

[0060] Figure 45 A schematic diagram of another light emitting principle of a multi-wavelength chip in the embodiments of the present application;

[0061] Figure 46 A first structural schematic diagram of a multi-wavelength chip in the embodiments of the present application;

[0062] Figure 47 A second structural schematic diagram of a multi-wavelength chip in the embodiments of the present application;

[0063] Figure 48 A third structural schematic diagram of a multi-wavelength chip in the embodiments of the present application;

[0064] Figure 49 A thirty-sixth schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0065] Figure 50 A thirty-seventh schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0066] Figure 51 A thirty-eighth schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0067] Figure 52 A thirty-ninth schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0068] Figure 53 A fortieth schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0069] Figure 54 A forty-first schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0070] Figure 55 A forty-second schematic diagram of a light emitting diode chip set in the embodiments of the present application;

[0071] Figure 56Forty-third schematic view of a light emitting diode chip set in embodiments of the present application;

[0072] Figure 57 Forty-fourth schematic view of a light emitting diode chip set in embodiments of the present application;

[0073] Figure 58 Forty-fifth schematic view of a light emitting diode chip set in embodiments of the present application;

[0074] Figure 59 Forty-sixth schematic view of a light emitting diode chip set in embodiments of the present application;

[0075] Figure 60 Forty-seventh schematic view of a light emitting diode chip set in embodiments of the present application;

[0076] Figure 61 Forty-eighth schematic view of a light emitting diode chip set in embodiments of the present application;

[0077] Figure 62 Forty-ninth schematic view of a light emitting diode chip set in embodiments of the present application;

[0078] Figure 63 Fiftieth schematic view of a light emitting diode chip set in embodiments of the present application;

[0079] Figure 64 A schematic view of a backlight display module in embodiments of the present application;

[0080] Figure 65 Another schematic view of a backlight display module in embodiments of the present application.

[0081] Explanation of reference numerals:

[0082] 112 - substrate; 102 - buffer layer;

[0083] 103 - N-type electrode; 104 - N-type semiconductor layer;

[0084] 105 - P-type electrode; 106a - first light emitting layer;

[0085] 106b - second light emitting layer; 107 - P-type semiconductor layer;

[0086] 108 - current spreading layer; 109 - reflective layer;

[0087] 110 - first insulating layer; 111 - second insulating layer;

[0088] 112 - bonding substrate; 113 - bonding layer;

[0089] 114 - color conversion material; 201 - first sub-layer;

[0090] 202 - second sub-layer; 203 - first hole blocking layer;

[0091] 204 - second hole blocking layer; 205 - barrier layer;

[0092] 206 - well layer; 300 - driving back plate;

[0093] 301 - driving substrate; 302 - driving unit;

[0094] 400 - encapsulation lens. DETAILED DESCRIPTION

[0095] The LED in the related art obtains white light in the following forms: the first form is that a single blue light chip is covered with yellow fluorescent powder to form white light, which has low color rendering index, high color temperature, and lifetime and reliability problems of the yellow fluorescent powder. The second form is that a single blue light chip is covered with red fluorescent powder and green fluorescent powder to form white light, which has complex powder mixing and packaging process, high cost, and lifetime and reliability problems of the green fluorescent powder. The spectral purity of the fluorescent powder in the above two forms is not enough, and the color gamut is low. The third form is that multiple single-color chips of different wavelengths and multi-color fluorescent substances form white light, which has high cost, complex driving mode, complex packaging process, non-uniform control, and lifetime and reliability problems of the fluorescent substances. The fourth form is that multiple single-color chips of different wavelengths are mixed to form white light, which has complex driving mode, non-uniform control, and high cost.

[0096] The light-emitting diode chip set, display backlight module and lighting module provided by the embodiments of the present application can form white light, and the light-emitting diode chip set comprises at least one multi-wavelength chip. The multi-wavelength chip comprises an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer, and there is a hole isolation region between the first light-emitting layer and the second light-emitting layer. The first light-emitting layer generates at least one wavelength of light in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate at least two wavelengths of light; or the first light-emitting layer generates at least two wavelengths of light in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate one wavelength of light.

[0097] In this way, the first light-emitting layer electroluminesces, and holes are difficult to reach the second light-emitting layer, so that the second light-emitting layer only exists photo luminescence. The multi-wavelength chip exists in two forms of electroluminescence and photoluminescence, so that the multi-wavelength chip is spectrally stable and will not fluctuate with current changes. The photo luminescence of the second light-emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer, and the second light-emitting layer can release stress in advance, so that the external quantum efficiency of the first light-emitting layer is improved. At the same time, the second light-emitting layer itself has good crystal quality, and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer, so that the external quantum efficiency of the second light-emitting layer can also be improved, so that the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiency compared with traditional LEDs.

[0098] The first light-emitting layer generates at least one wavelength of light, and the second light-emitting layer generates at least two wavelengths of light; or the first light-emitting layer generates at least two wavelengths of light in the form of electroluminescence, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate one wavelength of light. Each wavelength of light contains a number of wavelengths greater than or equal to 1 and less than or equal to 10, and the wavelength number and specific wavelength can be selected according to the need to form white light mixed with two or more wavelengths, which can form white light closer to sunlight (daylight), and can obtain higher apparent index in lighting and higher color gamut in display. The light-emitting diode chip set can flexibly form white light, has multiple white light schemes, can break through the traditional white light patent blockade, and can also be designed according to different needs to make the light power ratio of multiple wavelengths generated by the multi-wavelength chip consistent with the required light power ratio.

[0099] Considering that when a single multi-wavelength chip includes two wavelengths, it alone forms white light, which must contain a yellow wavelength, and cannot be packaged to form a full spectrum (at least containing a blue wavelength, a cyan wavelength, a green wavelength, a yellow wavelength and a red wavelength), and when combined with other single-wavelength chips / multi-wavelength chips / color conversion materials to form white light, the increased single-wavelength chips / multi-wavelength chips / color conversion materials are more, the packaging process, control method and driving method are more complex, the cost is higher, and the large number of color conversion materials will cause reliability and service life problems.

[0100] Therefore, the single multi-wavelength chip contains at least three wavelengths, which can correspond to at least three colors, and the multi-wavelength chip can be packaged to form a full spectrum, making it easier to form a full spectrum white light source. When combined with other single-wavelength chips / multi-wavelength chips / color conversion materials to form white light, the increased single-wavelength chips / multi-wavelength chips / color conversion materials are less, the driving method, packaging process and control method of the light-emitting diode chip set are simple, and the cost is easy to control. In addition, the size of the multi-wavelength chip and the light-emitting diode chip set can be flexibly adjusted to reduce cost and improve reliability and service life.

[0101] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below with reference to the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The described embodiments are some, but not all, embodiments of this application. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application. The embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0102] In a first aspect, embodiments of this application provide a light-emitting diode (LED) chipset CG that generates white light, such as full-spectrum white light. This LED chipset CG can be applied to lighting, display, and other fields. The LED chipset CG is packaged to form a light-emitting diode (LED), mini LED backlight, or surface light source, thereby simplifying the packaging, driving, and control methods.

[0103] Among them, see Figure 1 The LED chip includes a light-emitting diode (LED) chip group CG, a circuit board 300, and a packaged lens 400. The LED chip group CG is disposed on the circuit board 300, for example, the LED chip group CG is disposed on the front side of the circuit board 300 and soldered to corresponding pads on the front side of the circuit board 300, or electrically connected with conductive adhesive. The LED chip group CG is covered by the packaged lens 400.

[0104] In some possible examples, the white light produced by the LED chipset CG has a color temperature of 1800-11000, for example, a color temperature of 1800-6500, and a Color Rendering Index (CRI) of 90-100. The x-value in the color coordinates of white light is greater than or equal to 0.26 and less than or equal to 0.6, and the y-value is greater than or equal to 0.24 and less than or equal to 0.52, for example, a y-value greater than or equal to 0.28 and less than or equal to 0.52. The appropriate LED chipset CG is selected based on the application. For example, a narrow half-width multi-wavelength chip is used for display backlighting to obtain a wider color gamut, while a high CRI LED chipset is used for lighting applications.

[0105] See Figure 2 and Figure 3The light-emitting diode chip set CG comprises at least one multi-wavelength chip, the multi-wavelength chip comprises an N-type semiconductor layer 104, a P-type semiconductor layer 107, and a first light-emitting layer 106a and a second light-emitting layer 106b arranged between the N-type semiconductor layer 104 and the P-type semiconductor layer 107 and stacked, the first light-emitting layer 106a is located on the side of the second light-emitting layer 106b close to the P-type semiconductor layer 107. The first light-emitting layer 106a generates at least one wavelength band of light in an electroluminescence manner, and the light generated by the first light-emitting layer 106a excites the second light-emitting layer 106b to generate at least two wavelength bands of light, each wavelength band of light contains a wavelength number greater than or equal to 1 and less than or equal to 10.

[0106] It can be understood that the light-emitting diode chip set CG comprises one or more multi-wavelength chips. The shape of the multi-wavelength chip can be rectangular, square, circular, oval, triangular, diamond, parallelogram, or other polygons, etc. Each multi-wavelength chip corresponds to an N-type semiconductor layer 104, a P-type semiconductor layer 107, a first light-emitting layer 106a and a second light-emitting layer 106b. The first light-emitting layer 106a and the second light-emitting layer 106b are stacked, and the first light-emitting layer 106a is located on the side of the second light-emitting layer 106b close to the P-type semiconductor layer 107, that is, the first light-emitting layer 106a is closer to the P-type semiconductor layer 107, and the second light-emitting layer 106b is closer to the N-type semiconductor layer 104.

[0107] Referring to Figure 44 , the holes output by the P-type semiconductor layer 107 and the electrons output by the N-type semiconductor layer 104 recombine in the first light-emitting layer 106a, so that the first light-emitting layer 106a generates at least one wavelength band of light in an electroluminescence (EL) manner. The holes output by the P-type semiconductor layer 107 cannot reach the second light-emitting layer 106b, and the second light-emitting layer 106b cannot electroluminescence. The light generated by the first light-emitting layer 106a is transmitted into the second light-emitting layer 106b, exciting the second light-emitting layer 106b, so that the second light-emitting layer 106b generates at least two wavelength bands of light in a photoluminescence (PL) manner. In this way, the multi-wavelength chip can generate at least two wavelength bands of light, which is convenient for forming white light. The order of each first sub-layer in the first light-emitting layer 106a is not limited, and in addition to the smallest wavelength, other electroluminescence layers also exist photoluminescence.

[0108] The number of wavelengths contained in each band of light can be greater than or equal to 1 and less than or equal to 10, that is, each band of light includes c different wavelengths, and 1≤c≤10. Among the at least two bands of light generated by the second light-emitting layer 106b, the number of wavelengths contained in different bands of light can be the same or different. In this way, the light-emitting diode chip set CG simultaneously exists in the forms of electroluminescence and photoluminescence, and can select the band, the number of wavelengths, and the specific wavelength as needed to form white light mixed with two or more wavelengths (for example, white light mixed with four wavelengths), which is closer to sunlight, and improves the performance, reliability, and service life of the light-emitting diode chip set CG. The light power ratio can also be designed according to different needs, so that the light power ratio of the multiple wavelengths generated by the multi-wavelength chip is consistent with the required light power ratio.

[0109] Among them, the band generated by the first light-emitting layer 106a includes at least one of the ultraviolet band, the purple band, the blue band, the cyan band or the green band, the band generated by the second light-emitting layer 106b includes at least two of the ultraviolet band, the purple band, the blue band, the cyan band, the green band, the yellow band, the red band or the infrared band, and at least one wavelength of the light generated by the first light-emitting layer 106a is less than each wavelength of the light generated by the second light-emitting layer 106b.

[0110] It can be understood that the first light-emitting layer 106a can generate one or more of the ultraviolet band, the purple band, the blue band, the cyan band, and the green band, and the second light-emitting layer 106b can generate two or more of the ultraviolet band, the purple band, the blue band, the cyan band, the green band, the yellow band, the red band, and the infrared band. Moreover, at least one wavelength of the light generated by the first light-emitting layer 106a is less than each wavelength of the light generated by the second light-emitting layer 106b, so that the light generated by the first light-emitting layer 106a can excite the second light-emitting layer 106b to emit light.

[0111] In some possible examples, the wavelength range of the ultraviolet band is 200nm-400nm, the wavelength range of the purple band is 400nm-420nm, the wavelength range of the blue band is 420nm-470nm, the wavelength range of the cyan band is 470nm-500nm, the wavelength range of the green band is 500nm-565nm, the wavelength range of the yellow band is 565nm-590nm, the wavelength range of the red band is 590nm-740nm, and the wavelength range of the infrared band is 740nm-1.7μm.

[0112] It can be understood that the ultraviolet band can be a long-wave ultraviolet band, a medium-wave ultraviolet band, and also can be a short-wave ultraviolet band. The long-wave ultraviolet band has a wavelength range of 320 nm-400 nm, the medium-wave ultraviolet band has a wavelength range of 275 nm-320 nm, and the short-wave ultraviolet band has a wavelength range of 200 nm-275 nm. For the convenience of description and representation, the ultraviolet band and the purple band are denoted by A, the blue band is denoted by B, the cyan band is denoted by C, the green band is denoted by G, the yellow band is denoted by Y, the red band is denoted by R, and the infrared band is denoted by I.

[0113] The light in the ultraviolet band is ultraviolet light, which is colorless. The ultraviolet light includes long-wave ultraviolet light (UVA), medium-wave ultraviolet light (UVB), and also can be short-wave ultraviolet light (UVC). The light in the purple band is purple light, which has a color of purple. The light in the blue band is blue light, which has a color of blue. The light in the cyan band is cyan light, which has a color of cyan. The light in the green band is green light, which has a color of green. The light in the yellow band is yellow light, which has a color of yellow. The light in the red band is red light, which has a color of red. The light in the infrared band is infrared light, which is colorless.

[0114] When the first light-emitting layer generates light of at least two bands, one of which is one of the ultraviolet band, the purple band, the blue band, the cyan band, or the green band, and the other is one of the ultraviolet band, the purple band, the blue band, the cyan band, the green band, the yellow band, the red band, or the infrared band. For example, the first light-emitting layer generates light of two bands, which are the blue band and the green band respectively, and the second light-emitting layer generates light of at least two bands, one of which is the green band. For another example, the first light-emitting layer generates light of three bands, which are the blue band, the green band, and the red band respectively, and the second light-emitting layer generates light of at least two bands, one of which is the red band.

[0115] The band in which the light generated by the first light-emitting layer 106a is located can be the same as the band in which part of the light generated by the second light-emitting layer 106b is located. For example, the first light-emitting layer 106a generates light of the blue band, and the second light-emitting layer 106b generates light of the blue band. Figure 2The light generated by the first light-emitting layer 106a is in the blue band, i.e. the first light-emitting layer 106a generates blue light. The light generated by the second light-emitting layer 106b is in the blue band and the yellow band, i.e. the second light-emitting layer 106b generates blue light and yellow light. The light (blue light) generated by the first light-emitting layer 106a includes two wavelengths, for example including a 430 nm wavelength and a 450 nm wavelength. The light of the two bands generated by the second light-emitting layer 106b includes one wavelength and two wavelengths respectively, for example the blue light generated by the second light-emitting layer 106b includes a 440 nm wavelength, and the yellow light generated by the second light-emitting layer 106b includes a 570 nm wavelength and a 580 nm wavelength.

[0116] The band of the light generated by the first light-emitting layer 106a can also be different from the band of the light generated by the second light-emitting layer 106b. In this way, the multi-wavelength chip can generate light of at least three bands, facilitating the formation of white light. For example, referring to Figure 3 The light generated by the first light-emitting layer 106a is in the blue band, i.e. the first light-emitting layer 106a generates blue light. The light generated by the second light-emitting layer 106b is in the red band and the green band, i.e. the second light-emitting layer 106b generates red light and green light. The light (blue light) generated by the first light-emitting layer 106a includes one wavelength, for example including a 440 nm wavelength. The light of the two bands generated by the second light-emitting layer 106b each includes one wavelength, for example the red light generated by the second light-emitting layer 106b includes a 620 nm wavelength, and the green light generated by the second light-emitting layer 106b includes a 550 nm.

[0117] In some possible examples, the wavelengths of the at least one first light-emitting layer and the at least one second light-emitting layer are equal, and when the light-emitting diode chip set is applied to the backlight field, i.e. the backlight device includes the light-emitting diode chip set, the consistency of the power curve can be achieved, the color point stability is good, and the display effect is better. For example, the light generated by the first light-emitting layer is in the blue band, i.e. the first light-emitting layer generates blue light. The light generated by the second light-emitting layer is in the blue band and other bands (for example, the green band), i.e. the second light-emitting layer generates at least blue light. The light (blue light) generated by the first light-emitting layer includes at least one wavelength (for example, including two wavelengths), and the blue light generated by the first light-emitting layer includes a 440 nm wavelength. The light of each band generated by the second light-emitting layer includes at least one wavelength respectively, wherein the blue light generated by the second light-emitting layer includes a 440 nm wavelength.

[0118] In order to realize white light generated by the light-emitting diode chip set, the light generated by the light-emitting diode chip set comprises at least two first complementary waveband lights, the two first complementary waveband lights are mixed to generate white light, one of the wavebands corresponding to the two first complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, and the other is located in the yellow waveband; or the light generated by the light-emitting diode chip set comprises at least three second complementary waveband lights, the three second complementary waveband lights are mixed to generate white light, one of the wavebands corresponding to the three second complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, the other is located in the green waveband, and the last one is located in the red waveband. For example, the two first complementary waveband lights are cyan waveband light and yellow waveband light respectively, and the cyan waveband light and the yellow waveband light are mixed to generate white light without other waveband light. The three second complementary waveband lights are violet waveband light, green waveband light and red waveband light respectively, and the violet waveband light, the green waveband light and the red waveband light are mixed to generate white light without other waveband light.

[0119] In the first possible embodiment, referring to Figures 4 to 18 , the light generated by the second light-emitting layer 106b of the same multi-waveband chip is mixed to form white light, or the light generated by the first light-emitting layer 106a and the light generated by the second light-emitting layer 106b of the same multi-waveband chip are mixed to form white light. In this way, each multi-waveband chip can independently generate white light, and can directly emit white light without cooperating with other single-waveband chips and / or color conversion materials and / or other multi-waveband chips. At the same time, the light of the same multi-waveband chip is mixed in the direction perpendicular to the thickness of the chip, and the uniformity of the white light formed is better, and the performance is better.

[0120] Among them, the light generated by the first light-emitting layer 106a and the light generated by the second light-emitting layer 106b exist two first complementary waveband lights, one of the wavebands corresponding to the two first complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, and the other is located in the yellow waveband; and / or, the light generated by the first light-emitting layer 106a and the light generated by the second light-emitting layer 106b exist three second complementary waveband lights, one of the wavebands corresponding to the three second complementary waveband lights is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, the other is located in the green waveband, and the last one is located in the red waveband. The two first complementary waveband lights / three second complementary waveband lights can be mixed to form white light.

[0121] It can be understood that the two first complementary waveband lights can have one group or multiple groups, and when the two first complementary waveband lights have one group, the two first complementary waveband lights of the group can only be located in the first light-emitting layer 106a and the second light-emitting layer 106b respectively. For example, referring to Figure 4The light generated by the first light-emitting layer 106a is in the form of Ax, and the light generated by the second light-emitting layer 106b is in the form of YmGn. The multi-wavelength chip generates light in the form of AxYmIn. The first light-emitting layer 106a and the second light-emitting layer 106b can also generate light in other wave bands. For example, referring to Figure 5 The light generated by the first light-emitting layer 106a can be in the form of AxGy, and the light generated by the second light-emitting layer 106b can be in the form of YnGhIm. The multi-wavelength chip generates light in the form of AxGyYnGhIm.

[0122] When the two first complementary wave bands have multiple groups, the two first complementary wave bands of some groups can be located in the first light-emitting layer 106a and the second light-emitting layer 106b respectively, and the two first complementary wave bands of the other groups can be located in the second light-emitting layer 106b. For example, referring to Figure 6 The light generated by the first light-emitting layer 106a is in the form of Ax, and the light generated by the second light-emitting layer 106b is in the form of BmYn. The multi-wavelength chip generates light in the form of AxBmYn. A and Y are two first complementary wave bands, and B and Y are two first complementary wave bands. The first light-emitting layer 106a and the second light-emitting layer 106b can also generate light in other wave bands. For example, referring to Figure 7 The light generated by the first light-emitting layer 106a can be in the form of AxCy, and the light generated by the second light-emitting layer 106b can be in the form of BmYnIh. The multi-wavelength chip generates light in the form of AxCyBmYnIh.

[0123] When the two first complementary wave bands have multiple groups, the two first complementary wave bands of all groups can also be located in the first light-emitting layer 106a and the second light-emitting layer 106b respectively. For example, referring to Figure 8 The light generated by the first light-emitting layer 106a is in the form of AxBy, and the light generated by the second light-emitting layer 106b is in the form of GmYn. The multi-wavelength chip generates light in the form of AxByGmYn. A and Y are two first complementary wave bands, and B and Y are two first complementary wave bands. The first light-emitting layer 106a and the second light-emitting layer 106b can also generate light in other wave bands. For example, referring to Figure 9 The light generated by the first light-emitting layer 106a is in the form of AxByCz, and the light generated by the second light-emitting layer 106b is in the form of GmYnIh. The multi-wavelength chip generates light in the form of AxCyGzGmYnIh. The above x, y, z, m, n, h, and k represent the number of wavelengths contained in the light of the corresponding wave band, and x, y, z, m, n, h, and k are greater than or equal to 1 and less than or equal to 10.

[0124] It is also understood that the three second complementary wavebands can have one or more groups, and when the three second complementary wavebands have one group, the three second complementary wavebands of the group are respectively located in the first light emitting layer 106a and the second light emitting layer 106b. For example, referring to Figure 10 the light generated by the first light emitting layer 106a is in the form of Ax, and the light generated by the second light emitting layer 106b is in the form of GmRn, and the light generated by the multi-wavelength chip is in the form of AxGmRn. The second light emitting layer 106b can also generate light in other wavebands. For example, referring to Figure 11 the light generated by the second light emitting layer 106b is in the form of GmRnIh, and the light generated by the multi-wavelength chip is in the form of AxGmRnIh.

[0125] For another example, referring to Figure 12 the light generated by the first light emitting layer 106a is in the form of AxGy, and the light generated by the second light emitting layer 106b is in the form of RmIn. The light generated by the multi-wavelength chip is in the form of AxGyRmIn, wherein G, R and A are the three second complementary wavebands. Preferably, referring to Figure 13 the light generated by the first light emitting layer 106a is in the form of Bx, and the light generated by the second light emitting layer 106b is in the form of GyRz. The light generated by the multi-wavelength chip is in the form of BxGyRz, so that the multi-wavelength chip can form a wide color gamut backlight.

[0126] When the three second complementary wavebands have multiple groups, the three second complementary wavebands of some groups are respectively located in the first light emitting layer 106a and the second light emitting layer 106b. For example, referring to Figure 14 the light generated by the first light emitting layer 106a is in the form of AxBy, and the light generated by the second light emitting layer 106b is in the form of AmGnRh. The light generated by the multi-wavelength chip is in the form of AxByAmGnRh, wherein A, G and R are the three second complementary wavebands, and B, G and R are the three second complementary wavebands. The first light emitting layer 106a and the second light emitting layer 106b can also generate light in other wavebands. For example, referring to Figure 15 the light generated by the first light emitting layer 106a can be in the form of AxByGz, and the light generated by the second light emitting layer 106b can be in the form of AmGnRhIk, and the light generated by the multi-wavelength chip is in the form of AxByGzAmGnRhIk.

[0127] When the three second complementary wavebands have multiple groups, the three second complementary wavebands of all groups are respectively located in the first light emitting layer 106a and the second light emitting layer 106b. For example, referring to Figure 16, the light generated by the first light-emitting layer 106a is in the form of AxBy, and the light generated by the second light-emitting layer 106b is in the form of GmRn. The multi-wavelength chip generates light in the form of AxByGmRn, where A, G and R are three second complementary wavebands, and B, G and R are three second complementary wavebands. The first light-emitting layer 106a and the second light-emitting layer 106b can also generate light in other wavebands. For example, referring to Figure 17 , the light generated by the first light-emitting layer 106a can be in the form of AxByGz, and the light generated by the second light-emitting layer 106b can be in the form of GmRnIh. The multi-wavelength chip generates light in the form of AxByCzGmRnIh.

[0128] It should be understood that the light generated by the first light-emitting layer 106a and the light generated by the second light-emitting layer 106b can simultaneously include two first complementary wavebands and three second complementary wavebands, and the two first complementary wavebands and the three second complementary wavebands have the same light, i.e., the two first complementary wavebands and the three second complementary wavebands share part of the light. For example, referring to Figure 18 , the light generated by the first light-emitting layer 106a is in the form of AxBy, and the light generated by the second light-emitting layer 106b is in the form of GnYhRk. Wherein A, G and R are three second complementary wavebands, B, G and R are three second complementary wavebands, A and Y are two first complementary wavebands, B and Y are two first complementary wavebands, and A and B are both first complementary wavebands and second complementary wavebands. In this way, the multi-wavelength chip can form a high-quality full spectrum.

[0129] In some possible embodiments, the wavebands corresponding to the light generated by the multi-wavelength chip are blue wavebands, green wavebands and red wavebands, to generate white light by mixing. For example, the first light-emitting layer in the multi-wavelength chip generates light corresponding to a blue waveband, and the second light-emitting layer in the multi-wavelength chip generates light corresponding to a green waveband and a red waveband, i.e., the light generated by the first light-emitting layer is in the form of Bx, and the light generated by the second light-emitting layer is in the form of GnRh. For another example, the first light-emitting layer in the multi-wavelength chip generates light corresponding to a blue waveband and a red waveband, and the second light-emitting layer in the multi-wavelength chip generates light corresponding to a green waveband and a red waveband, i.e., the light generated by the first light-emitting layer is in the form of BxRy, and the light generated by the second light-emitting layer is in the form of GnRh.

[0130] More preferably, referring to Figure 19, the first light-emitting layer generates light corresponding to a blue band, a green band and a red band, and the second light-emitting layer generates light corresponding to a green band and a red band, i.e., the light generated by the first light-emitting layer is in the form of BxGyRz, and the light generated by the second light-emitting layer is in the form of GnRh. Further, at least one wavelength of the light in the blue band generated by the first light-emitting layer is equal to at least one wavelength of the light in the blue band generated by the second light-emitting layer, i.e., at least one of Gy and Gn is equal, and / or at least one wavelength of the light in the red band generated by the first light-emitting layer is equal to at least one wavelength of the light in the red band generated by the second light-emitting layer, i.e., at least one of Rz and Rh is equal. For example, two wavelengths of the light in the blue band generated by the first light-emitting layer are equal to two wavelengths of the light in the blue band generated by the second light-emitting layer, and / or two wavelengths of the light in the red band generated by the first light-emitting layer are equal to two wavelengths of the light in the red band generated by the second light-emitting layer.

[0131] In a second possible embodiment, referring to Figures 20 to 23 , at least two multi-wavelength chips cooperate to generate white light, i.e., two or more multi-wavelength chips are combined to obtain white light, and the multi-wavelength chips can be arranged in any shape. Among them, there are two first complementary bands of light in the light generated by the at least two multi-wavelength chips, and / or there are three second complementary bands of light in the light generated by the at least two multi-wavelength chips, and the two first complementary bands of light / three second complementary bands of light can be mixed to form white light. The two first complementary bands of light can have one or more groups, and the three second complementary bands of light can have one or more groups, and the embodiments of the present application are not limited in this regard.

[0132] Specifically, there are two first complementary bands of light in the light generated by the two multi-wavelength chips, and the two first complementary bands of light are respectively located in the two multi-wavelength chips; and / or, there are three second complementary bands of light in the light generated by the two multi-wavelength chips, and one of the three second complementary bands of light is located in one of the two multi-wavelength chips. Among them, there are two first complementary bands of light and / or there are three second complementary bands of light in the light generated by the two multi-wavelength chips, which means that there are two first complementary bands of light in the light generated by the two multi-wavelength chips, or there are three second complementary bands of light in the light generated by the two multi-wavelength chips, or there are two first complementary bands of light and three second complementary bands of light in the light generated by the two multi-wavelength chips, so as to enrich the white light scheme of the light-emitting diode chip group CG.

[0133] When two multi-wavelength chips simultaneously generate light containing two first complementary wavelengths and three second complementary wavelengths, these wavelengths share common light sources. One of the two first complementary wavelengths is ultraviolet, violet, blue, or cyan, while the other is yellow. Similarly, one of the three second complementary wavelengths is ultraviolet, violet, blue, or cyan, while the other is green, and the last is red.

[0134] In some possible implementations, the two multi-wavelength chip beams contain two first complementary wavelengths, and these two complementary wavelengths are located in the two multi-wavelength chips respectively. One of the two complementary wavelengths is ultraviolet, violet, blue, or cyan, and the other is yellow. The location of the two complementary wavelengths in the two multi-wavelength chips is not limited to a specific light-emitting layer within the corresponding chips; they can be located in the first light-emitting layer 106a and / or the second light-emitting layer 106b. For example, see [reference needed]. Figure 20 One of the two multi-wavelength chips, MC1, can be in the form of AxAmBn, and the other multi-wavelength chip, MC2, can be in the form of GxYmIn. A and Y are two first complementary wavelengths, and B and Y are two first complementary wavelengths. The two multi-wavelength chips work together to form white light.

[0135] In some other possible implementations, there are three second complementary wavelengths in the light from the two multi-wavelength chips. The three second complementary wavelengths are mixed to produce white light. One of the two second complementary wavelengths is located in the two multi-wavelength chips, while the other two are located in the two chips. One of the three second complementary wavelengths is ultraviolet, violet, blue or cyan, another is green, and the last one is red.

[0136] The three second complementary wavelength bands are located separately in two multi-wavelength chips, and are not limited to specific light-emitting layers in the corresponding multi-wavelength chips; that is, they can be located in the first light-emitting layer 106a and / or the second light-emitting layer 106b. For example, see [reference needed]. Figure 21 One of the two multi-wavelength chips, MC1, can be in the form of BxCmGn, and the other, MC2, can be in the form of GxRmIn. Here, A, G, and R represent three second complementary wavelength bands, and B, G, and R represent three second complementary wavelength bands. For another example, see [reference needed]. Figure 22 One of the two multi-wavelength chips, MC1, can be in the form of AxByGn, and the other multi-wavelength chip, MC2, can be in the form of AxCmRn. Here, A, G, and R are three second complementary wavelength bands, B, G, and R are three second complementary wavelength bands, and C, G, and R are three second complementary wavelength bands.

[0137] In some possible implementation manners, the two first complementary wavelength bands and the three second complementary wavelength bands exist in the light rays of the two multi-wavelength chips, and the two first complementary wavelength bands and the three second complementary wavelength bands have the same light rays. For example, referring to Figure 23 one of the two multi-wavelength chips MC1 can be in the form of AxBmCn, and the other multi-wavelength chip MC2 can be in the form of GxYmRn. Wherein, A, G, R are the three second complementary wavelength bands, B, G, R are the three second complementary wavelength bands, C, G, R are the three second complementary wavelength bands, A and Y are the two first complementary wavelength bands, B and Y are the two first complementary wavelength bands, and C and Y are the two first complementary wavelength bands. A, B, and C are both the first complementary wavelength bands and the second complementary wavelength bands.

[0138] In some possible implementation manners, the at least two multi-wavelength chips include a first chip and a second chip, and the first chip and the second chip cooperate to form white light; the light rays generated by a first light-emitting layer of the first chip correspond to a blue wavelength band and a green wavelength band, the light rays generated by a second light-emitting layer of the first chip correspond to a green wavelength band, the light rays generated by a first light-emitting layer of the second chip correspond to a blue wavelength band and a red wavelength band, and the light rays generated by a second light-emitting layer of the second chip correspond to a red wavelength band. That is, the first chip at least emits blue light and green light, and the second chip at least emits blue light and red light. In the first chip, the first light-emitting layer is in the form of BxGy, and the second light-emitting layer is in the form of Gmθn, where θ is any light ray that meets the requirements, for example, θ is B. In the second chip, the first light-emitting layer is in the form of BxRy, and the second light-emitting layer is in the form of Rmδn, where δ is any light ray that meets the requirements, for example, δ is B.

[0139] Further, at least one of the first chip and the second chip has at least one wavelength that is equal in the light rays generated by the first light-emitting layer and the second light-emitting layer. For example, in the first chip, the light rays generated by the first light-emitting layer are in a blue wavelength band and a green wavelength band, and the light rays generated by the second light-emitting layer are in a green wavelength band, and two wavelengths of the green wavelength band of the light rays generated by the first light-emitting layer correspond to two wavelengths of the green wavelength band of the light rays generated by the second light-emitting layer; and / or, in the second chip, the light rays generated by the first light-emitting layer are in a blue wavelength band and a green wavelength band, and the light rays generated by the second light-emitting layer are in a green wavelength band, and two wavelengths of the green wavelength band of the light rays generated by the first light-emitting layer correspond to two wavelengths of the green wavelength band of the light rays generated by the second light-emitting layer.

[0140] In a third possible embodiment, the light-emitting diode chip set CG further comprises at least one single-wavelength chip, each single-wavelength chip generating light rays of a single wavelength. The light rays generated by the single-wavelength chip can be in one of the ultraviolet, violet, blue, cyan, green, yellow, or red wavelength bands, and the light rays contain only one wavelength. The at least one multi-wavelength chip and the at least one single-wavelength chip cooperate to generate white light, and the multi-wavelength chips and the single-wavelength chips can be arranged side by side or in other forms.

[0141] In the above embodiments, the light rays of one multi-wavelength chip and one single-wavelength chip contain two first complementary wavelength bands, one of the two first complementary wavelength bands being in the single-wavelength chip; and / or, the light rays of the at least one multi-wavelength chip and the at least one single-wavelength chip contain three second complementary wavelength bands, one or two of the three second complementary wavelength bands being in the corresponding single-wavelength chip, and the two first complementary wavelength bands / three second complementary wavelength bands can be mixed to form white light. Through the at least one multi-wavelength chip and the at least one single-wavelength chip, various white light schemes can be formed to facilitate the generation of white light by the light-emitting diode chip set CG. Moreover, the light-emitting diode chip set CG can simultaneously include white light formed by various combinations to enrich the white light spectrum and improve the quality of white light.

[0142] In some possible implementations, the light rays generated by one multi-wavelength chip and one single-wavelength chip contain two first complementary wavelength bands. For example, as shown in FIG. 2A, the multi-wavelength chip MC is in the form of AxAmBn, and the single-wavelength chip SC is in the form of Y. Here, A and Y are two first complementary wavelength bands, and B and Y are two first complementary wavelength bands. Figure 24

[0143] In other possible implementations, the light rays generated by one multi-wavelength chip and one single-wavelength chip contain three second complementary wavelength bands. For example, as shown in FIG. 2B, the multi-wavelength chip MC is in the form of AxCmGn, and the single-wavelength chip SC is in the form of R. Here, A, G, and R are three second complementary wavelength bands, and C, G, and R are three second complementary wavelength bands. Figure 25

[0144] In yet other possible implementations, the light rays generated by one multi-wavelength chip and two single-wavelength chips contain three second complementary wavelength bands. For example, as shown in FIG. 2C, the multi-wavelength chip MC is in the form of AxBmCn, the single-wavelength chip SC1 is in the form of R, and the single-wavelength chip SC2 is in the form of G. Here, A, G, and R are three second complementary wavelength bands, B, G, and R are three second complementary wavelength bands, and C, G, and R are three second complementary wavelength bands. Figure 26

[0145] ​​​In another possible implementation, the light generated by two multi-wavelength chips and one single-wavelength chip contains three second complementary wavebands. For example, as shown in Figure 27 FIG. 1, the multi-wavelength chip MC1 is in the form of AxBmCn, the multi-wavelength chip MC1 is in the form of GxGmIn, and the single-wavelength chip SC is in the form of R. Wherein, A, G, R are three second complementary wavebands, B, G, R are three second complementary wavebands, and C, G, R are three second complementary wavebands.

[0146] In another possible implementation, the light generated by at least one multi-wavelength chip and at least one single-wavelength chip contains both three second complementary wavebands and two first complementary wavebands, so as to enrich the white light scheme of the light-emitting diode chip group CG. For example, the light generated by one multi-wavelength chip and one single-wavelength chip contains both two first complementary wavebands and three second complementary wavebands. For example, as shown in Figure 28 FIG. 2, the multi-wavelength chip MC is in the form of GxGzRnRh, and the single-wavelength chip SC is in the form of B. B, Y are two first complementary wavebands, and G, R, B are three second complementary wavebands.

[0147] For another example, the light generated by one multi-wavelength chip and two single-wavelength chips contains three second complementary wavebands, and the light generated by the multi-wavelength chip and one of the single-wavelength chips contains two first complementary wavebands. For example, as shown in Figure 28 FIG. 3, the multi-wavelength chip MC is in the form of GxYmIn, the single-wavelength chip SC1 is in the form of R, and the single-wavelength chip SC2 is in the form of B. B, Y are two first complementary wavebands, and G, R, B are three second complementary wavebands.

[0148] It can be understood that at least one wavelength of the light generated by the first light-emitting layer and the light generated by the second light-emitting layer in the multi-wavelength chip is equal. For example, the light generated by the first light-emitting layer of one multi-wavelength chip is in the blue waveband and the green waveband, the light generated by the second light-emitting layer is in the green waveband and the red waveband, and two wavelengths of the green waveband light generated by the first light-emitting layer and two wavelengths of the green waveband light generated by the second light-emitting layer correspond to each other.

[0149] In a fourth possible embodiment, as shown in Figure 30The light-emitting diode chip set CG further comprises at least one color conversion material 114 disposed on the multi-wavelength chip, each color conversion material 114 generating light rays of a single wavelength. The color conversion material 114 is disposed on the light-emitting side of the multi-wavelength chip and covers the multi-wavelength chip entirely. The color conversion material 114 can convert light rays into red light, yellow light, green light, etc., and the light rays contain only one wavelength. During packaging, the color conversion material 114 can be disposed on the light-emitting surface of the multi-wavelength chip, for example, the color conversion material 114 can be added in the packaging glue and directly placed on the light-emitting surface of the multi-wavelength chip by coating or the like, or a film can be formed to attach the color conversion material 114 to the light-emitting surface of the multi-wavelength chip, that is, the color conversion material 114 forms a color conversion film and is attached to the light-emitting surface of the multi-wavelength chip. Multiple color conversion materials 114 can be disposed on each multi-wavelength chip, and the multiple color conversion materials 114 can be independently added in the packaging glue, multiple packaging glues are formed and then placed on the light-emitting surface of the chip, or the multiple color conversion materials 114 can be mixed and added in the packaging glue, a packaging glue is formed and then placed on the light-emitting surface of the chip. Similarly, the multiple color conversion materials 114 can form multiple independent monochromatic color conversion films, or form a multi-color color conversion film, or form several monochromatic color conversion films, or form several multi-color color conversion films. The color conversion material 114 can be a quantum dot material or a fluorescent material, and the light rays converted by the color conversion material 114 are in the blue, green, cyan, yellow, red or infrared waveband. For example, the color conversion material 114 is a potassium fluorosilicate (KSF) fluorescent powder (i.e., a red fluorescent powder), an aluminate red fluorescent powder, an aluminate green fluorescent powder, an europium-doped blue fluorescent powder, a yellow fluorescent powder, etc.

[0150] The at least one multi-wavelength chip and the at least one color conversion material 114 cooperate to generate white light. For example, one multi-wavelength chip and one color conversion material cooperate to generate white light. For another example, one multi-wavelength chip and two color conversion materials cooperate to generate white light. For another example, two multi-wavelength chips and one color conversion material cooperate to generate white light. In this way, the light-emitting diode chip set CG can have multiple schemes for forming white light.

[0151] Specifically, one multi-wavelength chip and one color conversion material have two first complementary wavebands in the light rays, and one of the two first complementary wavebands is generated by the color conversion material; or, at least one multi-wavelength chip and at least one color conversion material have three second complementary wavebands in the light rays, and one or two of the three second complementary wavebands are generated by the color conversion material, respectively, and the two first complementary wavebands / three second complementary wavebands can be mixed to form white light. Through the at least one multi-wavelength chip and the at least one color conversion material, multiple white light schemes can be formed to facilitate the light-emitting diode chip set CG to generate white light. Moreover, the light-emitting diode chip set CG can simultaneously include white light formed by multiple combinations to enrich the white light spectrum and improve the quality of white light.

[0152] In some possible implementations, two first complementary wavebands of light exist in the light generated by one multi-wavelength chip and one color conversion material 114. The light generated by the first light-emitting layer 106a in the multi-wavelength chip includes at least one of ultraviolet light, violet light, blue light and green light. For example, referring to Figure 31 , the light generated by the multi-wavelength chip MC is in the form of AxGyAmBn, and the color conversion material 114 is a yellow color conversion material.

[0153] In some other possible implementations, three second complementary wavebands of light exist in the light generated by one multi-wavelength chip and one color conversion material 114. The light generated by the first light-emitting layer 106a in the multi-wavelength chip includes at least one of ultraviolet light, violet light, blue light and green light. For example, referring to Figure 32 , the light generated by the multi-wavelength chip MC is in the form of AxByAmRn, and the color conversion material 114 is a green color conversion material.

[0154] In some other possible implementations, three second complementary wavebands of light exist in the light generated by one multi-wavelength chip and two color conversion materials 114. The light generated by the first light-emitting layer 106a in the multi-wavelength chip includes at least one of ultraviolet light, violet light, blue light and green light. For example, referring to Figure 33 , the light generated by the multi-wavelength chip MC is in the form of AxByAmBn, and the two color conversion materials 114 are a green color conversion material and a red color conversion material respectively.

[0155] In some other possible implementations, three second complementary wavebands of light exist in the light generated by two multi-wavelength chips and one color conversion material 114. For example, referring to Figure 34 and Figure 35 , the multi-wavelength chip MC1 is in the form of AxAmBn, the multi-wavelength chip MC2 is in the form of GxGmIn, and the color conversion material is a red color conversion material. The red color conversion material can be arranged on the multi-wavelength chip MC1 (see Figure 34 ) or the multi-wavelength chip MC2, or can be arranged on both the multi-wavelength chip MC1 and the multi-wavelength chip MC2 (see Figure 35 ).

[0156] In some possible implementations, the waveband corresponding to the light generated by the first light-emitting layer is a blue waveband and a red waveband, the waveband corresponding to the light generated by the second light-emitting layer includes a red waveband, and the waveband corresponding to the light generated by the color conversion material is a green waveband. That is, the first light-emitting layer is in the form of BxRy, the second light-emitting layer is in the form of Rmδn, and the light generated by the color conversion material is green light, where δ is any light required, for example, δ is B.

[0157] In some possible embodiments, the first light-emitting layer generates light rays corresponding to a blue wavelength band and a red wavelength band, the second light-emitting layer generates light rays corresponding to a red wavelength band, and the color conversion material generates light rays corresponding to a green wavelength band and a red wavelength band. That is, the first light-emitting layer is in a BxRy form, the second light-emitting layer is in a Rmδn form, and the color conversion material generates green light and red light, where δ is any light ray as needed, for example, δ is B.

[0158] In some possible embodiments, the first light-emitting layer generates light rays corresponding to a blue wavelength band and a green wavelength band, the second light-emitting layer generates light rays corresponding to a green wavelength band and a red wavelength band, and the color conversion material generates light rays corresponding to a green wavelength band and a red wavelength band. That is, the first light-emitting layer is in a BxGy form, the second light-emitting layer is in a GmRn form, and the color conversion material generates green light and red light.

[0159] In some possible embodiments, the first light-emitting layer generates light rays corresponding to a blue wavelength band and a green wavelength band, the second light-emitting layer generates light rays corresponding to a green wavelength band and a red wavelength band, and the color conversion material generates light rays corresponding to a green wavelength band and a red wavelength band. That is, the first light-emitting layer is in a BxGy form, the second light-emitting layer is in a GmRn form, and the color conversion material generates green light and red light.

[0160] In some possible embodiments, one of the first light-emitting layer and the second light-emitting layer generates light rays corresponding to a blue wavelength band, a green wavelength band, and a red wavelength band, and the color conversion material generates light rays corresponding to a red wavelength band, a green wavelength band, or a red wavelength band and a green wavelength band. That is, the first light-emitting layer is in a BxGyRz form, or the second light-emitting layer is in a BmGnRz form, and the color conversion material generates green light, or the color conversion material generates red light, or the color conversion material generates green light and red light.

[0161] In the above-mentioned several embodiments, at least one wavelength of the light generated by the first light-emitting layer and the light generated by the second light-emitting layer is equal. For example, the first light-emitting layer generates light corresponding to the blue band and the green band, the second light-emitting layer generates light corresponding to the green band and the red band, and two wavelengths of the green band light generated by the first light-emitting layer are equal to two wavelengths of the green band light generated by the second light-emitting layer. For another example, the first light-emitting layer generates light corresponding to the blue band, the green band and the red band, the second light-emitting layer generates light corresponding to the blue band, the green band and the red band, and two wavelengths of the green band light generated by the first light-emitting layer are equal to two wavelengths of the green band light generated by the second light-emitting layer; and / or, two wavelengths of the red band light generated by the first light-emitting layer are equal to two wavelengths of the red band light generated by the second light-emitting layer; and / or, two wavelengths of the blue band light generated by the first light-emitting layer are equal to two wavelengths of the blue band light generated by the second light-emitting layer.

[0162] In a fifth possible embodiment, at least one single-wavelength chip and at least one color conversion material are further included, each single-wavelength chip generates light of a single wavelength, and each color conversion material 114 generates light of a single wavelength. The color conversion material 114 is arranged on the single-wavelength chip and / or the multi-wavelength chip. The color conversion material 114 can be arranged on the single-wavelength chip, the multi-wavelength chip, or both. For example, the color conversion material 114 is arranged on all single-wavelength chips and multi-wavelength chips.

[0163] The color conversion material 114 at different positions can be the same or different. For example, the green conversion material is arranged on the single-wavelength chip and the multi-wavelength chip. The light converted by the color conversion material and the light generated by the single-wavelength chip can be in the same band or different bands. When in the same band, the color conversion material and the single-wavelength chip can enrich the wavelength of white light and improve the continuity of the white light spectrum.

[0164] In some possible implementations, the at least one multi-wavelength chip, the at least one single-wavelength chip, and the at least one color conversion material cooperate to generate white light. The light generated by the at least one multi-wavelength chip, the light generated by the at least one single-wavelength chip, and the light converted by the at least one color conversion material 114 include three first complementary band lights, which are generated by the single-wavelength chip, the multi-wavelength chip, and the color conversion material 114, respectively.

[0165] For example, referring to FIG. 1, the multi-wavelength chip 110, the single-wavelength chip 120, and the color conversion material 114 cooperate to generate white light. The multi-wavelength chip 110 generates light of the first complementary band, the single-wavelength chip 120 generates light of the second complementary band, and the color conversion material 114 generates light of the third complementary band. Figure 36, the multi-wavelength chip MC is in the form of AxBmCn, and the single-wavelength chip SC is in the form of G. The color conversion material 114 is a red color conversion material. The color conversion material 114 can be arranged at will, for example, on the multi-wavelength chip. Among them, A, G, R are three first complementary waveband lights, B, G, R are three first complementary waveband lights, and C, G, R are three first complementary waveband lights.

[0166] In other possible implementations, there are three first complementary waveband lights in the light generated by the at least one multi-wavelength chip, the light generated by the at least one single-wavelength chip, and the light converted by the at least one color conversion material 114, and two of the three first complementary waveband lights are generated by the at least one multi-wavelength chip, the color conversion material is arranged on the single-wavelength chip, and the light converted by the color conversion material and the light generated by the single-wavelength chip are in the same waveband.

[0167] For example, referring to Figure 37 , the multi-wavelength chip MC is in the form of BxCmGn, and the single-wavelength chip SC is in the form of R. The color conversion material 114 is arranged on the single-wavelength chip SC, which is a red color conversion material to enrich the wavelength quantity of the light in the red waveband. Among them, B, G, R are three first complementary waveband lights, and C, G, R are three first complementary waveband lights.

[0168] For another example, the multi-wavelength chip MC is in the form of AxBmCn. The single-wavelength chip SC1 is in the form of G, and the single-wavelength chip SC2 is in the form of R. The color conversion material 114 is arranged on the single-wavelength chip SC2, which is a red color conversion material. Among them, A, G, R are three first complementary waveband lights, B, G, R are three first complementary waveband lights, and C, G, R are three first complementary waveband lights.

[0169] In other possible implementations, there are two second complementary waveband lights in the light generated by the at least one multi-wavelength chip, the light generated by the at least one single-wavelength chip, and the light converted by the at least one color conversion material 114, and one of the two second complementary waveband lights is generated by the at least one multi-wavelength chip, the color conversion material is arranged on the single-wavelength chip, and the light converted by the color conversion material and the light generated by the single-wavelength chip are in the same waveband. One of the two second complementary waveband lights is in the ultraviolet waveband, the violet waveband, the blue waveband, or the cyan waveband, and the other is in the yellow waveband.

[0170] For example, referring to Figure 38 , the multi-wavelength chip MC is in the form of AxBmCn, and the single-wavelength chip SC is in the form of Y. The color conversion material 114 is arranged on the single-wavelength chip SC, which is a yellow color conversion material to enrich the wavelength quantity of the light in the yellow waveband. Among them, A, Y are two second complementary waveband lights, B, Y are two second complementary waveband lights, and C, Y are two second complementary waveband lights.

[0171] It should be noted that the above-mentioned schemes for generating white light are not exhaustive, and other schemes for generating white light can also be included in the embodiments of the present application. The light-emitting diode chip set CG can include a multi-wavelength chip that generates white light alone, can also include two multi-wavelength chips that generate white light in combination, can also include at least one multi-wavelength chip and at least one single-wavelength chip that generate white light in combination, and can also include at least one multi-wavelength chip and at least one color conversion material that generate white light in combination. The light-emitting diode chip set CG can further include other multi-wavelength chips and / or single-wavelength chips and / or color conversion materials, which can further cooperate with the combination for generating white light to generate white light, so that the light-emitting diode chip set CG can have multiple schemes for generating white light, and the continuity of the white light spectrum can be increased.

[0172] For example, the light-emitting diode chip set CG includes a multi-wavelength chip MC1, and the light-emitting diode chip set CG further includes a multi-wavelength chip MC2 and / or a single-wavelength chip SC and / or a color conversion material. The multi-wavelength chip MC1 can be in the form of CxGmRn, and the multi-wavelength chip MC1 can generate white light alone. The multi-wavelength chip MC2 can be in the form of BxCmGn, the single-wavelength chip can be in the form of G, and the color conversion material can be a green color conversion material. The multi-wavelength chip MC2 and / or the single-wavelength chip SC and / or the color conversion material cannot generate white light alone, and can cooperate with the multi-wavelength chip MC1 to form white light.

[0173] For another example, the light-emitting diode chip set CG includes a multi-wavelength chip MC1, a multi-wavelength chip MC2, and a multi-wavelength chip MC3, wherein the multi-wavelength chip MC1 is in the form of AxBmCn, the multi-wavelength chip MC2 is in the form of GxYmRn, the multi-wavelength chip MC1 and the multi-wavelength chip MC2 can generate white light in combination, the multi-wavelength chip MC3 is in the form of BxCmRn, and the multi-wavelength chip MC3 and the multi-wavelength chip MC2 / the multi-wavelength chip MC1 can generate white light in combination.

[0174] For another example, the light-emitting diode chip set CG includes a multi-wavelength chip MC, a single-wavelength chip SC1, and a single-wavelength chip SC2, wherein the multi-wavelength chip MC is in the form of AxAmGn, the single-wavelength chip SC1 is in the form of R, and the multi-wavelength chip MC and the single-wavelength chip SC1 can generate white light in combination. The single-wavelength chip SC2 is in the form of B, and the single-wavelength chip SC2 and the multi-wavelength chip MC / the single-wavelength chip SC1 can generate white light in combination.

[0175] In another example, the light emitting diode chip set CG includes a multi-wavelength chip MC, a color conversion material, and a single-wavelength chip SC, wherein the multi-wavelength chip MC is in the form of AxBmGn, the color conversion material is a red conversion material, and the multi-wavelength chip MC and the color conversion material can mix to generate white light. The single-wavelength chip SC is in the form of Y, and the single-wavelength chip SC and the multi-wavelength chip MC can mix to generate white light.

[0176] It can be understood that at least one wavelength of the light generated by the first light emitting layer is equal to that of the light generated by the second light emitting layer. In an example, the first light emitting layer generates light in the blue wavelength band and the green wavelength band, and the second light emitting layer generates light in the green wavelength band and the red wavelength band. Two wavelengths of the green light generated by the first light emitting layer are equal to two wavelengths of the green light generated by the second light emitting layer.

[0177] In some possible embodiments, referring to Figures 39 to 41 , the first light emitting layer 106a in the multi-wavelength chip includes at least one first sub-layer 201, and the second light emitting layer 106b includes at least two second sub-layers 202. The at least one first sub-layer 201 and the at least two second sub-layers 202 are stacked in sequence. Each first sub-layer 201 has a wavelength, and each second sub-layer 202 has a wavelength. The number of the first sub-layers 201 is consistent with the number of wavelengths contained in the light generated by the first light emitting layer 106a, and each first sub-layer 201 emits a wavelength. The number of the second sub-layers 202 is consistent with the number of wavelengths contained in the light generated by the second light emitting layer 106b, and each second sub-layer 202 emits a wavelength. The first sub-layers 201 and the second sub-layers 202 are formed by an epitaxy process, and each of the first sub-layers 201 and the second sub-layers 202 can be a quantum well (QM) or a multi-quantum well (MQW). As shown in Figure 42 , the quantum well includes a barrier layer 205 and a well layer 206. As shown in Figure 43 , the multi-quantum well includes a plurality of barrier layers 205 and a plurality of well layers 206 which are cross-stacked.

[0178] It should be noted that when the first light emitting layer 106a includes two or more first sub-layers 201, the holes generated by the P-type semiconductor layer 107 can reach all the first sub-layers 201, and each first sub-layer 201 can be electroluminescent. The light generated by the first sub-layers 201 can be emitted from each surface, thereby exciting larger-wavelength material to be photoluminescent. In addition to the smallest-wavelength first sub-layer 201, the other first sub-layers 201 have both electroluminescent and photoluminescent mechanisms. The holes in the P-type semiconductor layer 107 are difficult to be transmitted to the second sub-layers 202, and each second sub-layer 202 has only photoluminescent mechanism.

[0179] In some possible examples, in the multi-wavelength chip, the sum of the thicknesses of the first layers 201 other than the one closest to the second layer 202 is less than the hole diffusion length, and the sum of the thicknesses of each first layer 201 is greater than or equal to the hole diffusion length, to form a hole isolation region, which can be an interface. As shown in FIG. 7, the thickness T1 is less than the hole diffusion length, and the thickness T2 is greater than or equal to the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 107 can reach each first layer 201, so that each first layer 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot reach each second layer 202, so that each second layer 202 cannot electroluminesce. Figure 38

[0180] In some possible examples, in the multi-wavelength chip, a first hole blocking layer 203 is arranged between adjacent first layers 201 and second layers 202, the sum of the thicknesses of the first layers 201 other than the one closest to the second layer 202 is less than the hole diffusion length, and the sum of the thicknesses of each first layer 201 and the first hole blocking layer 203 is greater than or equal to the hole diffusion length, to form a hole isolation region, which can be an interface. As shown in FIG. 8, the thickness T1 is less than the hole diffusion length, and the thickness T3 is greater than or equal to the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 107 can reach each first layer 201, so that each first layer 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot pass through the first hole blocking layer 203, i.e., the holes generated by the P-type semiconductor layer 107 cannot reach each second layer 202, so that each second layer 202 cannot electroluminesce. The material of the first hole blocking layer 203 can be a silicon-doped gallium nitride material. Figure 39

[0181] In some possible examples, a second hole blocking layer 204 is arranged between each pair of adjacent second layers 202, to block the holes and ensure that the holes cannot reach the second layers 202 far away from the P-type semiconductor. The material of the first hole blocking layer 203 can be a silicon-doped gallium nitride material. As a preferred implementation, referring to FIG. 9, the second hole blocking layer 204 is arranged between each pair of adjacent second layers 202, and the first hole blocking layer 203 is arranged between each pair of adjacent first layers 201 and second layers 202. In this way, the blocking effect on the holes is better, and the second layers 202 cannot electroluminesce, so that the spectrum is stable and does not fluctuate with the current. Figure 40

[0182] ​​​The multi-wavelength chip further includes: an N-type electrode electrically connected with the N-type semiconductor layer 104; a P-type electrode electrically connected with the P-type semiconductor layer 107, and an electric field is formed between the N-type electrode and the P-type electrode; and the multi-wavelength chip is configured to emit light rays of different wavelengths according to different voltage values or current values of the electric field. The multi-wavelength chip is configured to form a structure in which the N-type electrode, the N-type semiconductor layer 104, the second light-emitting layer 106b, the first light-emitting layer 106a, the P-type semiconductor layer 107, and the P-type electrode are arranged in sequence.

[0183] The first light-emitting layer includes a plurality of first sub-layers, i.e., a first first sub-layer, a second first sub-layer,..., and a Kth first sub-layer, which are arranged in sequence from the N-type semiconductor layer 104 to the P-type semiconductor layer 107. The working voltage Vf, the wavelength λ of light emission, and the band gap energy Eg of the second light-emitting region 117-2 of the first sub-layer satisfy the following relationships:

[0184] Vf = Eg / 1ev, Eg = 1.24 / λ

[0185] Based on the above formula, the greater the working voltage of the first sub-layer, i.e., the greater the voltage required for the first sub-layer to emit light rays of a corresponding wavelength. It is assumed that the working voltages Vf1, Vf2, Vf3,..., and VfK satisfy the relationship: Vf1 < Vf2 < Vf3 <... < VfK.

[0186] And it is assumed that the wavelengths of the light rays emitted by the first first sub-layer to the Kth first sub-layer increase in sequence, and the wavelength of the light ray emitted by the Kth first sub-layer is the maximum. When the working voltage Vf1 is applied to each first sub-layer, the Kth first sub-layer emits light rays with a wavelength λK through the electroluminescence mechanism.

[0187] When the working voltage Vf2 is applied to each first sub-layer, the K-1th first sub-layer emits light rays with a wavelength λK-1 through the electroluminescence mechanism, and the Kth first sub-layer is excited to emit light rays with a wavelength λM through the photoluminescence mechanism. At this time, the multi-wavelength chip can emit mixed light of two wavelengths. It should be noted that at this time, the Kth first sub-layer may also exist electroluminescence.

[0188] By analogy, the multi-wavelength chip can adjust the working voltage applied to the first light-emitting layer 106a to control the first light-emitting layer 106a to emit different amounts of light rays. Based on the difference in the voltage value or the current value of the first light-emitting layer 106a, a part of the first sub-layers can not emit light rays. Therefore, when the N-type electrode and the P-type electrode of the multi-wavelength chip are in a powered state, the first light-emitting layer 106a at least has light rays of one wavelength.

[0189] Specifically, the first light-emitting layer 106a is configured to emit light of a greater number of wavelengths as the voltage value or the current value of the electric field is greater, and emit light of one wavelength as the voltage value or the current value of the electric field is the smallest. In this way, the number of wavelengths of the multi-wavelength chip can be flexibly adjusted to form a multi-wavelength chip with a flexible size and an RGB full-color chip set, effectively widening the application scenarios and application boundaries of the multi-wavelength chip, the chip set thereof, the display device, and the lighting device.

[0190] In the multi-wavelength chip provided by the embodiments of the present application, the same technical effect can also be achieved by adjusting the applied working current, which will not be described here again. In the first light-emitting layer 106a described above, based on the fact that the electrons and holes can reach each first sub-layer, the stacking order of the first first sub-layer, the second first sub-layer, the third first sub-layer,..., and the Kth first sub-layer can not be limited to the above definition, and the stacking positions can be exchanged.

[0191] The multi-wavelength chip provided by the embodiments of the present application can be independently driven or commonly driven. Common driving means that the light-emitting layer formed by the first light-emitting layer and the second light-emitting layer is electrically connected to the same N-type electrode and the same P-type electrode. In the common driving mode, the multi-wavelength chip can be used as an atmosphere lamp, and different wavelengths of light can be obtained by adjusting the working voltage or the working current. Moreover, the multi-wavelength chip does not need to use multiple different chips in combination with a complex driving circuit, and the packaging structure is simpler and the driving mode is simpler. Independent driving means that the light-emitting layer formed by the first light-emitting layer and the second light-emitting layer is electrically connected to the same N-type electrode or the same P-type electrode.

[0192] In some possible examples, the P-type electrode includes m sub-P-type electrodes which are separate from each other; the P-type semiconductor layer includes m sub-P-type semiconductor layers which are separate from each other; and the m sub-P-type semiconductor layers are connected to the m sub-P-type electrodes one by one. When the first sub-P-type electrode P1, the second sub-P-type electrode P2, the third sub-P-type electrode P3,..., and the mth sub-P-type electrode Pm and the N-type electrode are in a powered-on state, the multiple light-emitting regions of the multi-wavelength chip can be independently driven to emit light of different wavelengths, respectively. In this way, a multi-wavelength chip in an independent driving mode can be formed.

[0193] The isolation structure can include a channel (CN) and an isolation material filled in the channel. The isolation structure can also only include the channel, i.e., the channel can not be filled with the isolation material. The channel can spatially isolate the adjacent light emitting regions. The channel CN can be filled with an electrically insulating isolation material, such as silicon nitride or silicon oxide, etc. In some embodiments, the electrically insulating isolation material can also have a light blocking effect, such as black photoresist, etc., so that the light mixing between the adjacent light emitting regions can be reduced or avoided, and the light emitting effect of the multi-wavelength chip can be improved. In other embodiments, the isolation structure can also be an ion implantation layer, which is formed by an ion implantation process and has an electrically insulating effect and a light blocking effect.

[0194] The isolation structure also extends into the N-type semiconductor layer, and the isolation structure can also extend into the N-type electrode. In this way, the isolation effect of the isolation structure on the adjacent light emitting regions can be improved. It should be noted that when at least part of the isolation structure extends into the N-type semiconductor or the N-type electrode, the isolation structure can only be located in a partial region of the N-type semiconductor or the N-type electrode close to the first light emitting layer, and does not penetrate the N-type semiconductor or the N-type electrode along the thickness direction of the N-type semiconductor or the N-type electrode.

[0195] In some possible examples, the N-type electrode includes m sub-N-type electrodes which are separate from each other; the N-type semiconductor layer includes m sub-N-type semiconductor layers which are separate from each other; and the m sub-N-type semiconductor layers are connected to the m sub-N-type electrodes one by one. When the first sub-N-type electrode N1, the second sub-N-type electrode N2, the third sub-N-type electrode N3,..., and the mth sub-N-type electrode Nm as well as the P-type electrode are in a powered-on state, the multiple light emitting regions of the multi-wavelength chip can be independently driven to emit light of different wavelengths, respectively. In this way, another multi-wavelength chip in an independent driving mode can also be formed. In this example, the isolation structure can also be provided between the adjacent light emitting regions, and the specific structure and arrangement manner of the isolation structure are the same as those described above, which will not be described here again.

[0196] It should be noted that in the common driving mode, different voltage values or current values in the multi-wavelength chip of the embodiment of the present application can obtain different numbers of wavelengths. In the independent driving mode, in the multi-wavelength chip of the embodiment of the present application, a number of light adjusting layers are one by one arranged corresponding to other light emitting regions, except for the light emitting region with the maximum light wavelength. That is, the light adjusting layer does not need to be arranged for the light emitting region with the maximum light wavelength. For example, the first light adjusting layer is arranged corresponding to the first light emitting region, the second light adjusting layer is arranged corresponding to the second light emitting region, the third light adjusting layer is arranged corresponding to the third light emitting region,..., and the m-1th light adjusting layer is arranged corresponding to the m-1th light emitting region. Each light adjusting layer can be arranged on the side of the sub-P-type electrode away from the second light emitting layer to form a normal mounting architecture. Each light adjusting layer can also be arranged on the side of the N-type electrode away from the second light emitting layer to form a vertical flip mounting architecture.

[0197] This is because, taking red light as an example, the multi-wavelength chip can adjust the minimum voltage so that only the recombination of electrons and holes exists in the first light-emitting layer of red light, and red light is emitted. The light-emitting area corresponding to the light-emitting surface can not need to be provided with a red light dimming layer, and the emission of red light can be ensured. If a red light dimming layer is used, the light efficiency of red light will be reduced. Therefore, such a setting can effectively reduce the preparation cost and improve the light efficiency. The structure mode of independent driving is usually suitable for LED direct display devices. Taking red, green and blue three-color independent driving as an example, a RGB full-color chip with high light efficiency and low cost can be obtained. Compared with the current single-chip single-color chip, a super-high-density pixel unit can be obtained while greatly reducing the number of chips, and the chip size is increased, so as to overcome the problems of process, yield and cost, etc., and promote the mass production of miniLED and microLED as soon as possible.

[0198] Referring to Figure 45 The first light-emitting layer includes a blue light first sub-layer 201-B, a green light first sub-layer 201-G and a red light first sub-layer 201-R. In the direction from the N-type electrode to the P-type electrode, the red light first sub-layer 201-R, the green light first sub-layer 201-G and the blue light first sub-layer 201-B are sequentially stacked. The first light-emitting layer formed by the red light first sub-layer 201-R, the green light first sub-layer 201-G and the blue light first sub-layer 201-B includes a first light-emitting area Q-1, a second light-emitting area Q-2 and a third light-emitting area Q-3, which share the N-type electrode and are respectively electrically connected to the first sub-P-type electrode P1, the second sub-P-type electrode P2 and the third sub-P-type electrode P3 to form an independent driving mode.

[0199] The numerical range of the red light working voltage Vfr of the red light first sub-layer 201-R is greater than 1.8V and less than or equal to 2.2V; the numerical range of the green light working voltage Vfg of the green light first sub-layer 201-G is greater than or equal to 2.3V and less than or equal to 2.6V; and the numerical range of the blue light working voltage Vfb of the blue light first sub-layer 201-B is greater than or equal to 2.7V and less than or equal to 3V. As a possible implementation, the red light working voltage Vfr of the red light first sub-layer 201-R can be 1.984V, the green light working voltage Vfg of the green light first sub-layer 201-G can be 2.4V, and the blue light working voltage Vfb of the blue light first sub-layer 201-B can be 2.755V.

[0200] When a voltage Vfr is applied to the third light emitting region Q-3 of the multi-wavelength chip, the red first sub-layer 201-R in the multi-wavelength chip emits red light by electroluminescence, the third light emitting region Q-3 emits red light, and there is no need to set a corresponding red light adjusting layer. In the figure, h represents a hole, e represents an electron, the hole and the electron only recombine in the red first sub-layer 201-R, excite the red first sub-layer 201-R to emit light, and form electroluminescence of the red first sub-layer 201-R. The principle of the following electroluminescence is similar to this.

[0201] When a voltage Vfg is applied to the second light emitting region Q-2 of the multi-wavelength chip, the red first sub-layer 201-R in the multi-wavelength chip emits red light by electroluminescence, the green first sub-layer 201-G emits green light by electroluminescence, and the red second sub-layer 202-R emits red light by photoexcitation. It should be noted that the red first sub-layer 201-R also exists photoexcitation. When the second light emitting region Q-2 is provided with a green light adjusting layer (not shown in the figure), the red light is filtered out, and only the green light is emitted.

[0202] When a voltage Vfb is applied to the first light emitting region Q-1 of the multi-wavelength chip, the red first sub-layer 201-R in the multi-wavelength light emitting diode chip emits red light by electroluminescence, the green first sub-layer 201-G emits green light by electroluminescence, and the blue first sub-layer 201-B emits blue light by electroluminescence, and the red second sub-layer 202-R and the green second sub-layer 202-G respectively emit red light and green light by photoexcitation. It should be noted that the red first sub-layer 201-R and the green first sub-layer 201-G also exist photoexcitation. When the first light emitting region Q-1 is provided with a blue light adjusting layer, the green light and the red light are filtered out, and only the blue light is emitted.

[0203] The above-mentioned adjusting layer includes a filter or a Bragg reflection layer (or a distributed Bragg reflector, DBR). Both the filter and the Bragg reflection layer can filter out the light passing through the adjusting layer by wavelength, so as to emit light with different wavelengths. Taking the Bragg reflection layer as an example, it can be alternately stacked with two materials of aluminum nitride and gallium nitride, or alternately stacked with two materials of titanium oxide and silicon oxide. Optionally, the thickness of the Bragg reflection layer is 2-6 microns, and in other embodiments, the thickness value can be adjusted as needed, which is not limited in the present application. The adjusting layer includes a plurality of sub-adjusting layers, which are respectively located opposite to a plurality of light emitting regions, so as to filter out the emitted light of different light emitting regions, so as to adjust the wavelength of the emitted light of the multi-wavelength chip.

[0204] Referring to Figure 46 and Figure 47The multi-wavelength chip provided by the embodiment of the present application further comprises: a buffer layer 102, an N-type electrode 103, a P-type electrode 105, a current spreading layer 108, a reflective layer 109, and a first insulating layer 110; the buffer layer 102 and the N-type semiconductor layer 104 are stacked, the second light-emitting layer 106b is arranged on the side of the N-type semiconductor layer 104 away from the buffer layer 102, the first light-emitting layer 106a is arranged on the side of the second light-emitting layer 106b away from the N-type semiconductor layer 104, and the P-type semiconductor layer 107 is arranged on the side of the first light-emitting layer 106a away from the buffer layer 102; the current spreading layer 108 is in contact with the side of the P-type semiconductor layer 107 away from the buffer layer 102, the N-type electrode 103 is in contact with the N-type semiconductor layer 104, and the P-type electrode 105 is in contact with both the P-type semiconductor layer 107 and the current spreading layer 108; the first insulating layer 110 is arranged on the side of the current spreading layer 108 away from the buffer layer 102; the reflective layer 109 is arranged on the side of the buffer layer 102 away from the first insulating layer 110, or the reflective layer 109 is arranged on the side of the first insulating layer 110 away from the buffer layer 102, and the side of the reflective layer 109 away from the buffer layer 102 is further provided with a second insulating layer 111.

[0205] Specifically, the N-type semiconductor layer 104 is arranged on the side surface of the buffer layer 102, the second light-emitting layer 106b is arranged on the surface of the N-type semiconductor layer 104 away from the buffer layer 102, the first light-emitting layer 106a is arranged on the surface of the second light-emitting layer 106b away from the buffer layer 102, and the P-type semiconductor layer 107 is arranged on the surface of the first light-emitting layer 106a away from the buffer layer 102. The N-type semiconductor layer 104 is further in contact with the N-type electrode 103 for conduction, the P-type semiconductor layer 107 is in contact with the P-type electrode 105 for conduction, and an electric field is formed between the N-type electrode 103 and the P-type electrode 105 in the power-on state. The first insulating layer 110 is arranged on the side of the P-type semiconductor layer 107 away from the buffer layer 102, and can be in contact with the P-type semiconductor layer 107 or be provided with other film layers, such as the current spreading layer 108.

[0206] Optionally, referring to Figure 47 , the reflective layer 109 is arranged on the side of the buffer layer 102 away from the first insulating layer 110, so that the light-emitting direction of the multi-wavelength chip is toward the direction away from the buffer layer 102. Optionally, referring to Figure 46 , the reflective layer 109 is arranged on the side of the first insulating layer 110 away from the buffer layer 102, and the side of the reflective layer 109 away from the buffer layer 102 is further provided with the second insulating layer 111. In this way, the light-emitting direction of the multi-wavelength chip is toward the direction of the buffer layer 102, that is, the downward arrow direction shown in Figure 46 .

[0207] The material of the buffer layer 102 can be one or more of gallium nitride, aluminum gallium nitride and aluminum indium gallium nitride, and the thickness of the buffer layer 102 can be 10-40 nanometers. The material of the N-type semiconductor layer 104 can be N-type doped gallium nitride, and the material of the P-type semiconductor layer 107 can be P-type doped gallium nitride. The material of the first insulating layer 110 can be silicon oxide or silicon nitride. The material of the current spreading layer 108 can be transparent conductive material (indium tin oxide, ITO) or silver, etc., which can improve the distribution ability of the P-type electrode 105 and make the holes as evenly distributed as possible in the area where the P-type semiconductor layer 107 is located.

[0208] Referring to Figure 46 and Figure 47 On the basis of the above-mentioned multi-wavelength chip, the multi-wavelength chip further comprises a substrate 101 arranged on the side of the buffer layer 102 away from the first insulating layer 110. The material of the substrate 101 can be one or more of sapphire, gallium nitride, aluminum nitride, silicon and silicon carbide. When the reflective layer 109 is arranged on the side of the buffer layer 102 away from the first insulating layer 110, the reflective layer 109 is arranged on the side of the substrate 101 away from the buffer layer 102. Figure 44 The light emission direction of the multi-wavelength chip is the upward direction indicated by the arrow in the figure, and the multi-wavelength chip forms a normal structure, Figure 46 The light emission direction of the multi-wavelength chip is the downward direction indicated by the arrow in the figure, and the multi-wavelength chip forms a flip structure.

[0209] It should be noted that in the above several examples, as shown in Figure 46 and Figure 47 The P-type electrode 105 also includes a pad directly in contact with the P-type semiconductor layer 107, and the remaining P-type electrodes 105 are at least partially in contact with the current spreading layer 108, for example, the remaining P-type electrodes 105 are directly in contact with the current spreading layer 108. Similarly, the N-type electrode 103 also includes a pad directly in contact with the N-type semiconductor layer 104.

[0210] Referring to Figure 48As shown, the multi-wavelength chip can further include a bonding substrate 112, a bonding layer 113, an N-type electrode 103, a P-type electrode 105, and a reflective layer 109; the bonding substrate 112 and the bonding layer 113 are sequentially arranged on the P-type electrode 105, the P-type semiconductor layer 107 is arranged on a side of the bonding layer 113 away from the bonding substrate 112 and contacts the bonding layer 113; the first light-emitting layer 106a is arranged on a side of the P-type semiconductor layer 107 away from the bonding substrate 112, the second light-emitting layer 106b is arranged on a side of the first light-emitting layer 106a away from the bonding substrate 112, the N-type semiconductor layer 104 is arranged on a side of the second light-emitting layer 106b away from the bonding substrate 112, and the first insulating layer 110 is arranged on a side of the N-type semiconductor 104 away from the light-emitting layer 106. The N-type electrode 103 contacts the N-type semiconductor layer 104 and the first insulating layer 110; and the reflective layer 109 is arranged on a side of the P-type semiconductor layer 107 close to the bonding substrate 112. The multi-wavelength chip forms a multi-wavelength chip with a vertical structure, and the light-emitting direction of the multi-wavelength chip can be Figure 28 the upward direction indicated by the arrow.

[0211] The bonding substrate 112 is arranged on a surface of the P-type electrode 105, and the bonding layer 113 is arranged on a surface of the bonding substrate 112 away from the P-type electrode 105. The P-type semiconductor layer 107 is arranged on a surface of the bonding layer 113 away from the bonding substrate 112, the first light-emitting layer 106a is arranged on a surface of the P-type semiconductor layer 107 away from the bonding substrate 112, and the second light-emitting layer 106b is arranged on a surface of the first light-emitting layer 106a away from the bonding substrate 112. The N-type semiconductor layer 104 is arranged on a surface of the second light-emitting layer 106b away from the bonding substrate 112, and the first insulating layer 110 is arranged on a surface of the N-type semiconductor 104 away from the second light-emitting layer 106b. The N-type electrode 103 penetrates through the first insulating layer 110 to contact the surface of the N-type semiconductor layer 104 away from the bonding substrate 112.

[0212] The application further provides a light-emitting diode chip set. The light-emitting diode chip set can refer to the light-emitting diode chip set described above, and the same or similar parts will not be described again. The light-emitting diode chip set generates white light and includes at least one multi-wavelength chip. The multi-wavelength chip includes an N-type semiconductor layer, a P-type semiconductor layer, and first and second light-emitting layers arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked together. The first light-emitting layer is located on a side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer generates at least two bands of light in an electroluminescent manner. The light generated by the first light-emitting layer excites the second light-emitting layer to generate one band of light. Each band of light contains a wavelength number greater than or equal to 1 and less than or equal to 10. There is a hole isolation region between the first light-emitting layer and the second light-emitting layer.

[0213] The first light-emitting layer generates at least two of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband or the green waveband, the second light-emitting layer generates one of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband, the green waveband, the yellow waveband, the red waveband or the infrared waveband, and at least one wavelength of the light generated by the first light-emitting layer 106a is smaller than each wavelength of the light generated by the second light-emitting layer. The corresponding ranges and codes of the wavebands can be referred to the above, and will not be described here again.

[0214] The wavelengths of the at least one first light-emitting layer and the at least one second light-emitting layer are equal, and when the light-emitting diode chip set is applied to the backlight field, i.e., the backlight device comprises the light-emitting diode chip set, the consistency of the power curve can be achieved, the color point stability is good, and the display effect is better. For example, referring to Figure 49 The first light-emitting layer generates the blue waveband and the green waveband, and the second light-emitting layer generates the green waveband, i.e., the first light-emitting layer generates blue light and green light, and the second light-emitting layer generates green light. At least one wavelength of each waveband of the light generated by the first light-emitting layer, at least one wavelength of the green light generated by the first light-emitting layer, for example, the green light generated by the first light-emitting layer contains a 540 nm wavelength. At least one wavelength of the green light generated by the second light-emitting layer, and the green light generated by the second light-emitting layer also contains a 540 nm wavelength. Of course, the wavelengths of the light generated by the first light-emitting layer and the second light-emitting layer can also be equal. For example, two wavelengths of the green waveband of the light generated by the first light-emitting layer and the green waveband of the light generated by the second light-emitting layer are equal.

[0215] In the first embodiment, the light generated by the first light-emitting layer of the same multi-wavelength chip is mixed to form white light, or the light generated by the first light-emitting layer and the light generated by the second light-emitting layer of the same multi-wavelength chip are mixed to form white light. In this way, the multi-wavelength chip can independently generate white light, and can directly emit white light without cooperating with other single-wavelength chips and / or color conversion materials and / or other multi-wavelength chips. At the same time, the light of the same multi-wavelength chip is mixed in the direction perpendicular to the thickness of the chip, and the uniformity of the formed white light is better, and the performance is better.

[0216] In some possible implementation manners, the light generated by the first light-emitting layer contains two first complementary wavebands, one of the wavebands corresponding to the two first complementary wavebands is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, and the other is located in the yellow waveband; and / or the light generated by the first light-emitting layer contains three second complementary wavebands, one of the wavebands corresponding to the three second complementary wavebands is located in the ultraviolet waveband, the violet waveband, the blue waveband or the cyan waveband, the other is located in the green waveband, and the last one is located in the red waveband; the two first complementary wavebands / three second complementary wavebands can be mixed to form white light.

[0217] In other possible implementations, the light generated by the first and second emissive layers contains two first complementary wavelengths, one of which corresponds to a wavelength in the ultraviolet, violet, blue, or cyan band, and the other to a wavelength in the yellow band; and / or, the light generated by the first and second emissive layers contains three second complementary wavelengths, one of which corresponds to a wavelength in the ultraviolet, violet, blue, or cyan band, another to a wavelength in the green band, and the last to a wavelength in the red band. The two first complementary wavelengths and the three second complementary wavelengths can be mixed to form white light.

[0218] In some possible implementations, see [reference] Figure 50 The light emitted by the first light-emitting layer corresponds to the blue and green wavelengths, while the light emitted by the second light-emitting layer corresponds to the red wavelength. That is, the light emitted by the first light-emitting layer is in the form of BxGy, and the light emitted by the second light-emitting layer is in the form of Rm. This multi-wavelength chip emits blue, green, and red light, which mix to form white light.

[0219] In other possible implementations, see [reference] Figure 51 The light emitted by the first light-emitting layer corresponds to the blue and red wavelengths, while the light emitted by the second light-emitting layer corresponds to the green wavelength. That is, the light emitted by the first light-emitting layer is in the form of BxRy, and the light emitted by the second light-emitting layer is in the form of Gm. This multi-wavelength chip emits blue, green, and red light, which mix to form white light.

[0220] In some other possible implementations, see [reference] Figure 52 The first light-emitting layer produces light in the blue, green, and red wavelengths, while the second light-emitting layer produces light in the blue, green, or red wavelengths. Specifically, the first light-emitting layer produces light in the form of BxGyRz, and the second light-emitting layer produces light in the form of Bm, Gm, or Rn. This multi-wavelength chip emits blue, green, and red light, which mix to form white light.

[0221] In the above embodiments, at least one wavelength of the light emitted by the first light-emitting layer and the light emitted by the second light-emitting layer is equal. For example, the light emitted by the first light-emitting layer is located in the blue and green bands, and the light emitted by the second light-emitting layer is located in the green and red bands. Two wavelengths of the green band light emitted by the first light-emitting layer and two wavelengths of the green band light emitted by the second light-emitting layer are correspondingly equal.

[0222] In the second embodiment, the white light is generated by at least two multi-wavelength chips, i.e., the white light is obtained by combining two or more multi-wavelength chips, and the multi-wavelength chips can be arranged in any shape. In the embodiment, the light generated by at least two multi-wavelength chips includes two first complementary wave bands and / or three second complementary wave bands, and the two first complementary wave bands / three second complementary wave bands can be mixed to form the white light. The two first complementary wave bands can have one or more groups, and the three second complementary wave bands can have one or more groups. The embodiment is not limited in this regard.

[0223] In some possible embodiments, referring to Figure 53 , the at least two multi-wavelength chips include a first chip MC1 and a second chip MC2, and the first chip MC1 and the second chip MC2 cooperate to form the white light. The light generated by a first light-emitting layer of the first chip MC1 corresponds to a blue wave band and a green wave band, the light generated by a second light-emitting layer of the first chip MC1 corresponds to the green wave band, the light generated by a first light-emitting layer of the second chip MC2 corresponds to the blue wave band and a red wave band, and the light generated by a second light-emitting layer of the second chip MC2 corresponds to the red wave band. That is, the first chip emits blue light and green light, the second chip emits blue light and red light, and the first chip and the second chip mix to generate the white light. In the first chip, the first light-emitting layer is in the form of BxGy, and the second light-emitting layer is in the form of Gm. In the second chip, the first light-emitting layer is in the form of BxRy, and the second light-emitting layer is in the form of Rm.

[0224] In the first chip, the light generated by the first light-emitting layer is in the blue wave band and the green wave band, the light generated by the second light-emitting layer is in the green wave band, and two wavelengths of the green wave band of the light generated by the first light-emitting layer correspond to two wavelengths of the green wave band of the light generated by the second light-emitting layer. In the second chip, the light generated by the first light-emitting layer is in the blue wave band and the green wave band, the light generated by the second light-emitting layer is in the green wave band, and two wavelengths of the green wave band of the light generated by the first light-emitting layer correspond to two wavelengths of the green wave band of the light generated by the second light-emitting layer.

[0225] In a third embodiment, the LED chip set further comprises at least one single-wavelength chip, each of which generates light of a single wavelength. The light generated by the single-wavelength chip can be in one of the ultraviolet, violet, blue, cyan, green, yellow, or red wavelength bands, and the light contains only one wavelength. The at least one multi-wavelength chip and the at least one single-wavelength chip cooperate to generate white light. The multi-wavelength chips and the single-wavelength chip can be arranged side by side or in other forms.

[0226] In a fourth embodiment, the LED chip set further comprises at least one color conversion material disposed on the multi-wavelength chip, each of which generates light of a single wavelength. The color conversion material is disposed on the light exit side of the multi-wavelength chip and covers the entire multi-wavelength chip. It is noted that multiple color conversion materials can be mixed and disposed on the chip. The color conversion material can convert light into red, yellow, green, etc. The color conversion material can be disposed in the manner and made of the material described above, which will not be described again here. One multi-wavelength chip and the color conversion material cooperate to generate white light, or two or more multi-wavelength chips and the color conversion material cooperate to generate white light.

[0227] The following will be described by taking one multi-wavelength chip and the color conversion material as an example.

[0228] In some possible embodiments, referring to Figure 54 , the light generated by the first light-emitting layer corresponds to the blue and red wavelength bands, the light generated by the second light-emitting layer corresponds to the red wavelength band, and the light generated by the color conversion material corresponds to the green wavelength band. That is, the first light-emitting layer is of the BxRy form, the second light-emitting layer is of the Rm form, and the light generated by the color conversion material is green light.

[0229] In other possible embodiments, referring to Figure 55 , the light generated by the first light-emitting layer corresponds to the blue and red wavelength bands, the light generated by the second light-emitting layer corresponds to the red wavelength band, and the light generated by the color conversion material corresponds to the red and green wavelength bands. That is, the first light-emitting layer is of the BxRy form, the second light-emitting layer is of the Rm form, and the light generated by the color conversion material is red and green light.

[0230] In yet other possible embodiments, referring to Figure 56 , the light generated by the first light-emitting layer corresponds to the blue and green wavelength bands, the light generated by the second light-emitting layer corresponds to the green wavelength band, and the light generated by the color conversion material corresponds to the green and red wavelength bands. That is, the first light-emitting layer is of the BxGy form, the second light-emitting layer is of the Gm form, and the light generated by the color conversion material is green and red light.

[0231] In some other possible implementations, see [reference] Figure 57 The light emitted by the first emitting layer corresponds to the blue and green wavelengths, the light emitted by the second emitting layer corresponds to the green wavelength, and the light emitted by the color conversion material corresponds to the red wavelength. That is, the first emitting layer is in the BxGy form, the second emitting layer is in the Gm form, and the light emitted by the color conversion material is red light.

[0232] In some other possible implementations, see [reference] Figure 58 The light emitted by the first emitting layer corresponds to the blue, green, and red wavelengths. The light emitted by the color conversion material corresponds to the green, red, or a combination of both wavelengths. Specifically, the first emitting layer is of the BxGyRz form, and the light emitted by the color conversion material is green, red, or a combination of both. The light emitted by the second emitting layer corresponds to the blue, green, or red wavelengths.

[0233] In some other possible implementations, see [reference] Figure 59 The light emitted by the first emitting layer is located in the violet and blue wavelengths, or the light emitted by the first emitting layer is located in the ultraviolet and blue wavelengths, the light emitted by the second emitting layer is located in the blue wavelengths, and the light converted by the color conversion material is located in the red and green wavelengths. That is, the first emitting layer is in the form of AxBy, the second emitting layer is in the form of Bm, and the light emitted by the color conversion material is red and green light.

[0234] In some other possible implementations, see [reference] Figure 60 The light emitted by the first emitting layer is located in the violet and green bands, or the light emitted by the first emitting layer is located in the ultraviolet and green bands, the light emitted by the second emitting layer is located in the green band, and the light converted by the color conversion material is located in the red and blue bands. That is, the first emitting layer is in the form of AxGy, the second emitting layer is in the form of Gm, and the light emitted by the color conversion material is red and blue light.

[0235] The following explanation uses two multi-wavelength chips and color conversion materials as examples.

[0236] In some possible implementations, see [reference] Figure 61, two multi-wavelength chips include a first chip MC1 and a second chip MC2, the first light-emitting layer of the first chip MC1 generates light corresponding to a blue band and a green band, the second light-emitting layer of the first chip MC1 generates light corresponding to a green band, the first light-emitting layer of the second chip MC2 generates light corresponding to a blue band and a red band, the second light-emitting layer of the second chip MC2 generates light corresponding to a red band, and the color conversion material generates light corresponding to a red band. That is, the first light-emitting layer of the first chip is in a BxGy form, the second light-emitting layer of the first chip is in a Gm form, the first light-emitting layer of the second chip is in a BxRy form, the second light-emitting layer of the second chip is in a Rm form, and the color conversion material generates red light.

[0237] In some possible embodiments, referring to Figure 62 , the first light-emitting layer of the first chip MC1 generates light corresponding to a blue band and a green band, the second light-emitting layer of the first chip MC1 generates light corresponding to a green band, the first light-emitting layer of the second chip MC2 generates light corresponding to a blue band and a red band, the second light-emitting layer of the second chip MC2 generates light corresponding to a red band, and the color conversion material generates light corresponding to a green band. That is, the first light-emitting layer of the first chip is in a BxGy form, the second light-emitting layer of the first chip is in a Gm form, the first light-emitting layer of the second chip is in a BxRy form, the second light-emitting layer of the second chip is in a Rm form, and the color conversion material generates green light.

[0238] In some possible embodiments, referring to Figure 63 , the first light-emitting layer of the first chip MC1 generates light corresponding to a blue band and a green band, the second light-emitting layer of the first chip MC1 generates light corresponding to a green band, the first light-emitting layer of the second chip MC2 generates light corresponding to a blue band and a red band, the second light-emitting layer of the second chip MC2 generates light corresponding to a red band, and the color conversion material generates light corresponding to a green band and a red band. That is, the first light-emitting layer of the first chip is in a BxGy form, the second light-emitting layer of the first chip is in a Gm form, the first light-emitting layer of the second chip is in a BxRy form, the second light-emitting layer of the second chip is in a Rm form, and the color conversion material generates green light and red light.

[0239] In the above several embodiments, at least one of the wavelengths of the light generated by the first light-emitting layer and the light generated by the second light-emitting layer of at least one of the first chip and the second chip are equal. For example, in the first chip, two wavelengths of the green band light generated by the first light-emitting layer and two wavelengths of the green band light generated by the second light-emitting layer are equal; and / or, in the second chip, two wavelengths of the red band light generated by the first light-emitting layer and two wavelengths of the red band light generated by the second light-emitting layer are equal.

[0240] It should be noted that the multi-wavelength chip in the embodiment of the present application further includes: an N-type electrode laminated on the side of the N-type semiconductor layer away from the second light-emitting layer; a P-type electrode laminated on the side of the P-type semiconductor layer away from the first light-emitting layer, and an electric field is formed between the P-type electrode and the N-type electrode; and the multi-wavelength chip is configured to emit different amounts of light of different wavelengths according to different voltage values or current values of the electric field. The modulation light-emitting principle is described above and will not be repeated here.

[0241] It should be further noted that the multi-wavelength chip in the embodiment of the present application can further include a buffer layer, a current spreading layer, a reflective layer, and a first insulating layer as needed, and further can include a substrate to form a multi-wavelength chip in a normal structure or a multi-wavelength chip in a flip-chip structure. The multi-wavelength chip in the embodiment of the present application can further include a bonding substrate, a bonding layer, a reflective layer, and a first insulating layer as needed to form a multi-wavelength chip in a vertical structure. The specific structure of the multi-wavelength chip can be referred to the above and will not be repeated here.

[0242] Referring to Figure 64 and Figure 65 , the embodiment of the present application further provides a display backlight module, which includes a circuit board and the light-emitting diode chip set CG described above. The circuit board can be a PCB circuit board or a driving backplane. The light-emitting diode chip set CG is arranged on the circuit board and is electrically connected with the circuit board. The display backlight module has a wider color gamut, can improve reliability and service life, and reduce cost.

[0243] As an implementable embodiment, a plurality of light-emitting diode chip sets CG can be arranged on the circuit board. The plurality of light-emitting diode chip sets CG are arranged in an array on the circuit board. The circuit board can provide driving current for the plurality of light-emitting diode chip sets CG, so as to drive the plurality of light-emitting diode chip sets CG to emit light. As shown in Figure 64 , the light-emitting diode chip set CG1, the light-emitting diode chip set CG2, the light-emitting diode chip set CG3, and the light-emitting diode chip set CG4 are arranged on the circuit board 300. In some examples, there can be 5, 6 or more light-emitting diode chip sets CG. The number of light-emitting diode chip sets CG can be adjusted, and the embodiment is not limited in this regard.

[0244] As another possible implementation, refer to Figure 65 The circuit board 300 includes a driving substrate 301 and a plurality of driving units 302, one driving unit 302 is electrically connected with at least one light emitting diode chip group CG, and the plurality of driving units 302 are all electrically connected with the driving substrate 301. The driving unit 302 and the driving substrate 301 can also be TFT and CMOS. As shown in FIG. 45, the light emitting diode chip group CG1 and the light emitting diode chip group CG2 are electrically connected with one driving unit 302, the light emitting diode chip group CG3 and the light emitting diode chip group CG4 are electrically connected with another driving unit 302, and the two driving units 302 are all electrically connected with the driving substrate 301. The number of the driving units 302 and the number of the light emitting diode chip groups CG connected with each driving unit 302 can be adjusted, and the embodiment is not limited thereto.

[0245] The embodiment of the present application also provides a lighting device, which includes a circuit board and the above-mentioned light emitting diode chip group CG, the light emitting diode chip group CG is arranged on the circuit board and is electrically connected with the circuit board. The lighting device can be a lamp, such as a street lamp, a decorative lamp, etc., and the circuit board can be a printed circuit board (PCB) or a flexible printed circuit (FPC).

[0246] The lighting device can obtain a higher color rendering index, a wider color gamut and full-spectrum illumination light, can improve reliability and service life, and reduce cost.

[0247] In the description of the embodiment of the present application, it should be understood that, unless otherwise explicitly specified and limited, the terms "mount", "connect", "connection" should be understood in a broad sense, for example, can be fixedly connected, can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances. The terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation to the present application. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified and limited.

[0248] The terms "first", "second", "third", "fourth" and the like in the description and in the claims of the present application, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the use of these terms herein is to be construed to cover a generalised use of these terms to refer to similar elements independently of any specific order or sequence. Furthermore, these terms can be used interchangeably with each other and can be used with any other of the terms "first", "second", "third", "fourth" and the like wherever it is explicit from the context that such an interpretation is appropriate. The use of any of the terms "first", "second", "third", "fourth" and the like, is neither intended to nor should be construed to limit the scope of the application to related systems or methods merely having the described functionality. Moreover, the terms "comprise", "comprising", "include", "including", and the like, as used herein, are specifically intended to be construed as open-ended terms i.e., the terms do not exclude additional, unrecited elements or method steps. Any process, method, system, product, or apparatus that comprises a set of elements or steps does not include only those elements or steps listed in the specification, but can include additional elements or steps not expressly listed or inherent to such process, method, system, product, or apparatus.

[0249] Finally, it should be noted that the above-described embodiments are merely intended to illustrate the technical solutions of the present application, but not to limit the present application; although the above-described embodiments of the present application are described in detail, those skilled in the art should understand that the technical solutions recorded in the above-described embodiments can be modified, or some or all of the technical features can be replaced by equivalent replacements; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting diode chip set, characterized by, The light-emitting diode chip set generates white light, comprising at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light-emitting layer being located on the side of the second light-emitting layer close to the P-type semiconductor layer; The first light-emitting layer generates at least one waveband of light in an electroluminescent manner, the light generated by the first light-emitting layer exciting the second light-emitting layer to generate at least two wavebands of light, each of the wavebands of light containing a wavelength number greater than or equal to 1 and less than or equal to 10; There is a hole isolation region between the first light-emitting layer and the second light-emitting layer.

2. The light emitting diode chip set of claim 1, wherein, The waveband generated by the first light-emitting layer comprises at least one of an ultraviolet waveband, a violet waveband, a blue waveband, a cyan waveband, or a green waveband, the waveband generated by the second light-emitting layer comprises at least two of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband, the green waveband, a yellow waveband, a red waveband, or an infrared waveband, and at least one wavelength of the light generated by the first light-emitting layer is smaller than each wavelength of the light generated by the second light-emitting layer.

3. The light emitting diode chip set of claim 1, wherein, The light generated by the light-emitting diode chip set comprises at least two first complementary wavebands of light, the two first complementary wavebands of light being mixed to form the white light, one of the wavebands corresponding to the two first complementary wavebands of light being located in an ultraviolet waveband, a violet waveband, a blue waveband, or a cyan waveband, and the other being located in a yellow waveband; Alternatively, the light generated by the light-emitting diode chip set comprises at least three second complementary wavebands of light, the three second complementary wavebands of light being mixed to form the white light, one of the wavebands corresponding to the three second complementary wavebands of light being located in an ultraviolet waveband, a violet waveband, a blue waveband, or a cyan waveband, the other being located in a green waveband, and the last one being located in a red waveband.

4. The light emitting diode chip set of claim 1, wherein, The light generated by the second light-emitting layer of the same multi-wavelength chip is mixed to form the white light; or the light generated by the first light-emitting layer and the light generated by the second light-emitting layer of the same multi-wavelength chip are mixed to form the white light.

5. The light emitting diode chip set of claim 1, wherein, At least two multi-wavelength chips cooperate to generate the white light.

6. The light emitting diode chip set of claim 1, wherein, Further comprising at least one single-wavelength chip, each of the single-wavelength chips generating light of a single wavelength; At least one multi-wavelength chip and at least one single-wavelength chip cooperate to generate the white light.

7. The light emitting diode chip set of claim 1, wherein, Further comprising at least one color conversion material arranged on the multi-wavelength chip, each of the color conversion materials generating light of a single wavelength; At least one multi-wavelength chip and at least one color conversion material cooperate to generate the white light.

8. The light emitting diode chip set of claim 1, wherein, Further comprising at least one single-wavelength chip and at least one color conversion material, each of the single-wavelength chips generating light of a single wavelength, the color conversion material being arranged on the single-wavelength chip and / or the multi-wavelength chip, each of the color conversion materials generating light of a single wavelength; At least one multi-wavelength chip, at least one single-wavelength chip, and at least one color conversion material cooperate to generate the white light.

9. The light emitting diode chip set according to claim 7 or 8, characterized in that The color conversion material includes quantum dot material or fluorescent material, and the light converted by the color conversion material is in a blue waveband, a green waveband, a cyan waveband, a yellow waveband, a red waveband or an infrared waveband.

10. The light emitting diode chip set according to any one of claims 1 to 8, wherein, The white light has a color temperature of 1800-6500, a color rendering index of 90-100, and x value in the color coordinates of the white light is greater than or equal to 0.26 and less than or equal to 0.6, and y value is greater than or equal to 0.28 and less than or equal to 0.

52.

11. The light emitting diode chip set according to any one of claims 1 to 8, wherein The first light-emitting layer in the multi-wavelength chip includes at least one first sub-layer, and the second light-emitting layer includes at least two second sub-layers, the at least one first sub-layer and the at least two second sub-layers are stacked in sequence, each of the first sub-layers has a different wavelength, and each of the second sub-layers has a different wavelength.

12. The light emitting diode chip set of claim 11, wherein, The sum of the thicknesses of the first sub-layers except for one first sub-layer adjacent to the second sub-layers is less than the hole diffusion length, and the sum of the thicknesses of each of the first sub-layers is greater than or equal to the hole diffusion length, so as to form the hole isolation region.

13. The light emitting diode chip set of claim 12, wherein, In the multi-wavelength chip, a first hole barrier layer is arranged between adjacent first sub-layers and second sub-layers, the sum of the thicknesses of the first sub-layers except for one first sub-layer adjacent to the second sub-layers is less than the hole diffusion length, and the sum of the thicknesses of each of the first sub-layers and the first hole barrier layer is greater than or equal to the hole diffusion length, so as to form the hole isolation region. And / or, a second hole barrier layer is arranged between two adjacent second sub-layers.

14. The light emitting diode chip set of any of claims 1-8, wherein, The multi-wavelength chip further includes: An N-type electrode electrically connected to the N-type semiconductor layer; A P-type electrode electrically connected to the P-type semiconductor layer, and an electric field is formed between the P-type electrode and the N-type electrode; The multi-wavelength chip is configured to emit different amounts of light of different wavelengths according to different voltage values or current values of the electric field.

15. The light emitting diode chip set of claim 7, wherein, The first light-emitting layer generates light in a blue waveband and a red waveband, the second light-emitting layer generates light in the red waveband, and the color conversion material generates light in a green waveband; Or, the first light-emitting layer generates light in the blue waveband and the red waveband, the second light-emitting layer generates light in the red waveband, and the color conversion material generates light in the green waveband and the red waveband; Or, the first light-emitting layer generates light in the blue waveband and the green waveband, the second light-emitting layer generates light in the green waveband, and the color conversion material generates light in the green waveband and the red waveband; Or, the first light-emitting layer generates light in the blue waveband and the green waveband, the second light-emitting layer generates light in the green waveband and the red waveband, and the color conversion material generates light in the red waveband; Alternatively, the light generated by one of the first light-emitting layer and the second light-emitting layer corresponds to the blue waveband, the green waveband and the red waveband, and the light generated by the color conversion material corresponds to the green waveband or the red waveband or the green waveband and the red waveband.

16. The light emitting diode chip set of claim 5, wherein, The at least two multi-wavelength chips include a first chip and a second chip, and the first chip and the second chip cooperate to form the white light; The first light-emitting layer of the first chip generates light corresponding to the blue waveband and the green waveband, the second light-emitting layer of the first chip generates light corresponding to the green waveband, the first light-emitting layer of the second chip generates light corresponding to the blue waveband and the red waveband, and the second light-emitting layer of the second chip generates light corresponding to the red waveband.

17. The light emitting diode chip set of claim 4, wherein, The multi-wavelength chip generates light corresponding to the blue waveband, the green waveband and the red waveband.

18. The light emitting diode chip set of claim 17, wherein, The first light-emitting layer generates light corresponding to the blue waveband, the green waveband and the red waveband, and the second light-emitting layer generates light corresponding to the green waveband and the red waveband.

19. The light emitting diode chip set of claim 2, wherein, When the first light-emitting layer generates light of at least two wavebands, one of which is one of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband or the green waveband, and the other of which is one of the ultraviolet waveband, the violet waveband, the blue waveband, the cyan waveband, the green waveband, the yellow waveband, the red waveband or the infrared waveband.

20. The set of light emitting diode chips according to any of claims 1-8, 15-18, wherein, The wavelength of at least one of the first light-emitting layer and the second light-emitting layer is equal.

21. The light emitting diode chip set of any of claims 1-8, wherein, The multi-wavelength chip further includes a buffer layer, an N-type electrode, a P-type electrode, a current spreading layer, a reflective layer and a first insulating layer. The buffer layer and the N-type semiconductor layer are stacked, the second light-emitting layer is arranged on a side of the N-type semiconductor layer away from the buffer layer, the first light-emitting layer is arranged on a side of the second light-emitting layer away from the N-type semiconductor layer, and the P-type semiconductor layer is arranged on a side of the first light-emitting layer away from the buffer layer. The current spreading layer is in contact with a side of the P-type semiconductor layer away from the buffer layer, the N-type electrode is in contact with the N-type semiconductor layer, and the P-type electrode is in contact with both the P-type semiconductor layer and the current spreading layer. The first insulating layer is arranged on a side of the current spreading layer away from the buffer layer. The reflective layer is arranged on a side of the buffer layer away from the light-emitting layer, or the reflective layer is arranged on a side of the first insulating layer away from the buffer layer, and a second insulating layer is further arranged on a side of the reflective layer away from the buffer layer.

22. The light emitting diode chip set of claim 21, wherein, The multi-wavelength chip further includes a substrate arranged on a side of the buffer layer away from the light-emitting layer. When the reflective layer is arranged on a side of the buffer layer away from the light-emitting layer, the reflective layer is arranged on a side of the substrate away from the buffer layer.

23. The light emitting diode chip set of any of claims 1-8, wherein, The multi-wavelength chip further comprises a bonding substrate, a binding layer, an N-type electrode, a P-type electrode, a reflective layer and a first insulating layer; The bonding substrate and the binding layer are sequentially arranged on the P-type electrode, the P-type semiconductor layer is arranged on a side of the binding layer away from the bonding substrate and contacts the binding layer; The first light-emitting layer is arranged on a side of the P-type semiconductor layer away from the bonding substrate, the second light-emitting layer is arranged on a side of the first light-emitting layer away from the bonding substrate, the N-type semiconductor layer is arranged on a side of the second light-emitting layer away from the bonding substrate, the first insulating layer is arranged on a side of the N-type semiconductor layer away from the bonding substrate, and the N-type electrode contacts the N-type semiconductor layer and the first insulating layer; The reflective layer is arranged on a side of the P-type semiconductor layer close to the bonding substrate.

24. A light emitting diode chip set, comprising: The white light emitting diode chip set comprises at least one multi-wavelength chip, the multi-wavelength chip comprising an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged between the N-type semiconductor layer and the P-type semiconductor layer and stacked, the first light-emitting layer being located on a side of the second light-emitting layer close to the P-type semiconductor layer; The first light-emitting layer generates at least two wavebands of light in an electroluminescent manner, the light generated by the first light-emitting layer exciting the second light-emitting layer to generate one waveband of light, each of the wavebands of light containing a wavelength number greater than or equal to 1 and less than or equal to 10; There is a hole isolation region between the first light-emitting layer and the second light-emitting layer.

25. The light emitting diode chip set of claim 24, wherein, The light generated by the first light-emitting layer of the same multi-wavelength chip mixes to form the white light; or the light generated by the first light-emitting layer and the light generated by the second light-emitting layer of the same multi-wavelength chip mix to form the white light.

26. The light emitting diode chip set of claim 25, wherein, The waveband corresponding to the light generated by the first light-emitting layer is a blue waveband and a green waveband, and the waveband corresponding to the light generated by the second light-emitting layer is a red waveband; Alternatively, the waveband corresponding to the light generated by the first light-emitting layer is the blue waveband and the red waveband, and the waveband corresponding to the light generated by the second light-emitting layer is the green waveband; Alternatively, the waveband corresponding to the light generated by the first light-emitting layer is the blue waveband, the green waveband and the red waveband, and the waveband corresponding to the light generated by the second light-emitting layer is the blue waveband, the green waveband or the red waveband.

27. The light emitting diode chip set of claim 24, wherein, At least two multi-wavelength chips cooperate to generate the white light.

28. The light emitting diode chip set of claim 27, wherein, The at least two multi-wavelength chips comprise a first chip and a second chip, and the first chip and the second chip cooperate to form the white light; The waveband corresponding to the light generated by the first light-emitting layer of the first chip is a blue waveband and a green waveband, the waveband corresponding to the light generated by the second light-emitting layer of the first chip is the green waveband, the waveband corresponding to the light generated by the first light-emitting layer of the second chip is a blue waveband and a red waveband, and the waveband corresponding to the light generated by the second light-emitting layer of the second chip is the red waveband.

29. The light emitting diode chip set of claim 24, wherein, The application also comprises at least one single-wavelength chip, each of which generates light of a single wavelength; The at least one multi-wavelength chip and the at least one single-wavelength chip cooperate to generate the white light.

30. The light emitting diode chip set of claim 24, wherein, The application also comprises at least one color conversion material arranged on the multi-wavelength chip, each of which generates light of a single wavelength; The at least one multi-wavelength chip and the at least one color conversion material cooperate to generate the white light.

31. The light emitting diode chip set of claim 30, wherein, The light generated by the first light-emitting layer corresponds to a blue wavelength band and a red wavelength band, the light generated by the second light-emitting layer corresponds to the red wavelength band, and the light generated by the color conversion material corresponds to a green wavelength band; Alternatively, the light generated by the first light-emitting layer corresponds to the blue wavelength band and the red wavelength band, the light generated by the second light-emitting layer corresponds to the red wavelength band, and the light generated by the color conversion material corresponds to the green wavelength band and the red wavelength band; Alternatively, the light generated by the first light-emitting layer corresponds to the blue wavelength band and the green wavelength band, the light generated by the second light-emitting layer corresponds to the green wavelength band, and the light generated by the color conversion material corresponds to the green wavelength band and the red wavelength band; Alternatively, the light generated by the first light-emitting layer corresponds to the blue wavelength band and the green wavelength band, the light generated by the second light-emitting layer corresponds to the green wavelength band, and the light generated by the color conversion material corresponds to the red wavelength band; Alternatively, the light generated by the first light-emitting layer corresponds to a blue wavelength band, a green wavelength band, and a red wavelength band, and the light generated by the color conversion material corresponds to the green wavelength band, the red wavelength band, or the red wavelength band and the green wavelength band.

32. The light emitting diode chip set of claim 30, wherein, The light generated by the first light-emitting layer is located in a violet wavelength band and a blue wavelength band, the light generated by the second light-emitting layer is located in the blue wavelength band, and the light converted by the color conversion material is located in a red wavelength band and a green wavelength band; Alternatively, the light generated by the first light-emitting layer is located in an ultraviolet wavelength band and the blue wavelength band, the light generated by the second light-emitting layer is located in the blue wavelength band, and the light converted by the color conversion material is located in the red wavelength band and the green wavelength band; Alternatively, the light generated by the first light-emitting layer is located in the violet wavelength band and the green wavelength band, the light generated by the second light-emitting layer is located in the green wavelength band, and the light converted by the color conversion material is located in the red wavelength band and the blue wavelength band; Alternatively, the light generated by the first light-emitting layer is located in the ultraviolet wavelength band and the green wavelength band, the light generated by the second light-emitting layer is located in the green wavelength band, and the light converted by the color conversion material is located in the red wavelength band and the blue wavelength band.

33. The light emitting diode chip set of claim 30, wherein, The two multi-wavelength chips comprise a first chip and a second chip; The first light-emitting layer of the first chip generates light in a blue wavelength band and a green wavelength band, the second light-emitting layer of the first chip generates light in the green wavelength band, the first light-emitting layer of the second chip generates light in a blue wavelength band and a red wavelength band, the second light-emitting layer of the second chip generates light in the red wavelength band, and the color conversion material generates light in the red wavelength band. The first light-emitting layer of the first chip generates light in a blue wavelength band and a green wavelength band, the second light-emitting layer of the first chip generates light in the green wavelength band, the first light-emitting layer of the second chip generates light in a blue wavelength band and a red wavelength band, the second light-emitting layer of the second chip generates light in the red wavelength band, and the color conversion material generates light in the green wavelength band. The first light-emitting layer of the first chip generates light in a blue wavelength band and a green wavelength band, the second light-emitting layer of the first chip generates light in the green wavelength band, the first light-emitting layer of the second chip generates light in a blue wavelength band and a red wavelength band, the second light-emitting layer of the second chip generates light in the red wavelength band, and the color conversion material generates light in the green wavelength band and the red wavelength band.

34. The light emitting diode chip set of any of claims 24-33, wherein, The wavelength of the at least one first light-emitting layer and the at least one second light-emitting layer is equal.

35. The light emitting diode chip set of any of claims 24-33, wherein, The multi-wavelength chip further comprises: an N-type electrode electrically connected to the N-type semiconductor layer; a P-type electrode electrically connected to the P-type semiconductor layer, and an electric field is formed between the N-type electrode and the P-type electrode; The multi-wavelength chip is configured to emit different amounts of light of different wavelengths according to different voltage values or current values of the electric field.

36. A display backlight module, comprising: The light-emitting diode chip group of any one of claims 1-35 is disposed on the circuit board and electrically connected to the circuit board.

37. An illumination device, comprising: The light-emitting diode chip group of any one of claims 1-35 is disposed on the circuit board and electrically connected to the circuit board.

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