Preparation method of perovskite layer, solar cell and photovoltaic module

Abstract

The invention discloses a preparation method of a perovskite layer, a solar cell and a photovoltaic module. The preparation method of the perovskite layer comprises the following steps: preparing a lead halide framework layer; the lead halide framework layer is coated with a cation solution, amino sulfonate is added into the cation solution, the concentration of the amino sulfonate is 0.05 g / mL-4 g / mL, and cations and anions in the amino sulfonate are respectively provided with hydrophobic groups; and carrying out annealing treatment to obtain the perovskite layer. According to the method, the crystallization behavior of the perovskite is regulated and controlled at the same time, the defects inside and outside the perovskite layer are effectively reduced, and the problem that the defects of the perovskite layer are too many is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of solar cells, in particular to a preparation method of perovskite layer, a solar cell and a photovoltaic module. BACKGROUND

[0002] As the light-absorbing layer in a solar cell, the perovskite layer has a high light absorption coefficient and a long carrier lifetime, and plays a key role in the process of converting solar light into electrical energy.

[0003] The two-step method is a commonly used method for preparing the perovskite layer, that is, a lead halide skeleton layer is first evaporated, a cation solution is coated on the surface of the lead halide skeleton layer, and the perovskite layer is obtained through annealing treatment. However, the perovskite layer prepared by the two-step method has many defects, which seriously hinders the transmission of carriers. SUMMARY

[0004] The present application provides a preparation method of perovskite layer, a solar cell and a photovoltaic module, which effectively reduces the defects inside and outside the perovskite layer by simultaneously controlling the perovskite crystallization behavior and passivating defects, thereby solving the problem of too many defects in the perovskite layer.

[0005] In a first aspect, the embodiments of the present application provide a preparation method of perovskite layer.

[0006] A preparation method of perovskite layer, comprising the following steps:

[0007] Preparation of a lead halide skeleton layer;

[0008] Coating a cation solution on the lead halide skeleton layer, wherein an amine sulfonate is added to the cation solution, the concentration of the amine sulfonate is 0.05 g / mL to 4 g / mL, and the structure of the amine sulfonate is as formula (1):

[0009]

[0010] wherein R1, R2 and R3 are all hydrophobic groups;

[0011] Annealing treatment to obtain the perovskite layer.

[0012] As an optional embodiment, in the embodiments of the present application, the concentration of the amine sulfonate is 1 g / mL to 3 g / mL.

[0013] As an optional embodiment, in the embodiments of the present application, the hydrophobic group is one or more of phenyl, long-chain alkyl and trifluoromethyl, and the number of carbon atoms of the long-chain alkyl is greater than 5.

[0014] As an optional embodiment, in the embodiments of the present application, the cation of the amine sulfonate is

[0015] one or both of the following, the anion of the amidosulfonic acid salt is one or both of the following.

[0016] As an optional embodiment, in the embodiments of the present application, the amidosulfonic acid salt is

[0017] any one of the following.

[0018] As an optional embodiment, in the embodiments of the present application, in the annealing step, the temperature of the annealing is 100-150℃, and the time of the annealing is 20-40min.

[0019] As an optional embodiment, in the embodiments of the present application, the thickness of the lead halide skeleton layer is 200-500nm; and / or, the thickness of the perovskite layer is 300-600nm.

[0020] As an optional embodiment, in the embodiments of the present application, one or more of the following is added into the cation solution: iodomethanimine, bromomethanimine, chloromethanimine, iodomethylamine, bromomethylamine and chloromethylamine; and / or, the lead halide skeleton layer is obtained by co-evaporation of lead iodide and cesium bromide.

[0021] In a second aspect, the embodiments of the present application provide a solar cell.

[0022] A solar cell comprising a perovskite layer prepared by the method for preparing a perovskite layer mentioned in the first aspect.

[0023] As an optional embodiment, in the embodiments of the present application, the perovskite layer is used in the solar cell with a textured structure.

[0024] As an optional embodiment, in the embodiments of the present application, the solar cell is a perovskite tandem solar cell, which comprises:

[0025] a silicon-based substrate cell;

[0026] a first transparent conductive layer stacked on the light-receiving side of the silicon-based substrate cell;

[0027] a first transport layer stacked on the side of the first transparent conductive layer away from the silicon-based substrate cell;

[0028] the perovskite layer is stacked on the side of the first transport layer away from the silicon-based substrate cell;

[0029] the second transport layer is stacked on the side of the perovskite layer away from the silicon-based substrate cell;

[0030] a second transparent conductive layer stacked on a side of the second transport layer facing away from the silicon substrate cell;

[0031] a first electrode forming an ohmic contact with the silicon substrate cell and a second electrode forming an ohmic contact with the second transparent conductive layer;

[0032] one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer.

[0033] As an optional embodiment, in the embodiments of the present application, the solar cell is a single-junction perovskite solar cell, which comprises:

[0034] a transparent conductive substrate;

[0035] a first transport layer stacked on the transparent conductive substrate;

[0036] the perovskite layer is stacked on a side of the first transport layer facing away from the transparent conductive substrate;

[0037] a second transport layer stacked on a side of the perovskite layer facing away from the transparent conductive substrate;

[0038] a first electrode forming an ohmic contact with the transparent conductive substrate and a second electrode forming an ohmic contact with the second transport layer.

[0039] In a third aspect, the embodiments of the present application provide a photovoltaic module.

[0040] A photovoltaic module comprises the solar cell mentioned in the second aspect.

[0041] Compared with the prior art, the present application has the following beneficial effects:

[0042] The preparation method of the perovskite layer provided by the embodiments of the present application coats a cation solution added with a specific concentration of amine sulfonate on the top of a lead halide framework layer, the amine sulfonate penetrates from the top to the bottom along with the cation solution, the concentration of the amine sulfonate at the top is relatively high, and the concentration of the amine sulfonate gradually decreases during the penetration process towards the bottom. When the perovskite layer is initially generated, the sulfonic acid group in the amine sulfonate reacts with Pb 2+ has strong chelation and can chelate Pb 2+Chelation, effectively inhibits the reaction of cation solution with lead halide framework layer, plays a role in delaying the formation of perovskite crystal, solves the problem that the perovskite crystal formed at the top hinders the penetration of cations, and reduces the uniformity of cation solution penetration, thereby reducing the problem of internal defects of perovskite layer caused by poor cation solution permeability and uneven penetration. At the same time, the relatively high concentration of amine group ions at the top can induce the formation of quasi-two-dimensional perovskite structure, so that the stability of the perovskite grown at the top is improved, and the relatively low concentration of amine group ions at the bottom generates three-dimensional perovskite structure. The ions of the three-dimensional perovskite layer are not easy to pass through the quasi-two-dimensional perovskite structure and escape to the surface of the perovskite layer, thereby effectively reducing the surface defects of the perovskite layer.

[0043] During the annealing process, the temperature rises, so that the reaction of the cation solution with the lead halide framework layer dominates, and the lead halide framework layer is more likely to be converted into the perovskite layer. The chelation of the sulfonic acid group and Pb 2+ During the annealing process, the chelation of the sulfonic acid group and Pb

[0044] In summary, compared with using amine group or sulfonic acid group alone, by coordinating the amine group and sulfonic acid group in the amine sulfonate with a hydrophobic group, the crystallization process and passivation behavior of perovskite can be synergistically regulated, which can significantly reduce the internal and external defects of perovskite, thereby better improving the performance of the perovskite layer. And in this process, no other impurity components that are not conducive to the stability of perovskite are introduced, avoiding the problem of reducing the stability of perovskite structure caused by the introduction of impurity components. The present application completes the regulation of internal and external defects of the perovskite layer at the same time as the perovskite is prepared, and does not need to be passivated in the subsequent process, avoiding the introduction of new defects in the passivation process.

[0045] When the concentration of amine sulfonate is too high, the perovskite crystallization resistance is too large, which makes it difficult to grow, and the generated quasi-two-dimensional perovskite layer is too thick, which is not conducive to the transport of carriers. When the concentration of amine sulfonate is too low, it is not conducive to the regulation of perovskite formation and crystallization process, and is also not conducive to the formation of quasi-two-dimensional perovskite layer, resulting in more defects in the perovskite and interface. BRIEF DESCRIPTION OF DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some of the embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art based on the drawings without creative effort are within the scope of the present application.

[0047] Figure 1 is a schematic diagram of the preparation steps of the perovskite layer disclosed in the embodiments of the present application.

[0048] Figure 2 is a schematic diagram of the structure of the solar cell disclosed in the embodiments of the present application.

[0049] Icon: 1, silicon substrate cell, 2, first transparent conductive layer; 3, first transport layer; 4, perovskite layer; 5, second transport layer; 6, buffer layer; 7, second transparent conductive layer; 8, antireflection layer; 91, first electrode; 92, second electrode. DETAILED DESCRIPTION

[0050] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of the present application.

[0051] The terms "mount", "set", "provided with", "connected", and "linked" should be interpreted broadly. For example, it can be fixed connection, detachable connection, or integral structure; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through an intermediate medium, or internal communication between two devices, elements or components. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0052] The terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not intended to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, the meaning of "multiple" is two or more.

[0053] During the preparation of the perovskite layer by the two-step method, the perovskite crystals formed on the surface of the lead halide skeleton layer hinder the penetration of cations, and the uneven penetration of cations caused by the easy formation of perovskite parts leads to more deep-level defects in the perovskite layer, which seriously hinders the transport of carriers.

[0054] To this end, the application provides a method for preparing a perovskite layer, which can simultaneously control perovskite crystallization behavior and passivate defects by adding amine sulfonate into a cation solution, and solve the problem of excessive deep level defects in the perovskite layer by synergistic perovskite crystallization and passivation.

[0055] The technical solutions of the application will be further described below with reference to the embodiments and drawings.

[0056] In a first aspect, the embodiments of the application provide a method for preparing a perovskite layer.

[0057] A method for preparing a perovskite layer, comprising the following steps:

[0058] Preparation of a lead halide skeleton layer;

[0059] Coating a cation solution on the lead halide skeleton layer, wherein amine sulfonate is added into the cation solution, the concentration of the amine sulfonate is 0.05 g / mL to 4 g / mL, and the structure of the amine sulfonate is as formula (1):

[0060]

[0061] wherein R1, R2 and R3 are all hydrophobic groups;

[0062] Annealing treatment to obtain the perovskite layer.

[0063] The amine sulfonate is an ionic liquid composed of amine cations and sulfonate anions, and does not contain other ions that may affect the perovskite structure. The cation solution added with a specific concentration of amine sulfonate is coated on the top of the lead halide skeleton layer, and the amine sulfonate penetrates from the top to the bottom along with the cation solution. The concentration of the amine sulfonate at the top is relatively high, and the concentration of the amine sulfonate gradually decreases during the penetration process towards the bottom. When the perovskite layer is initially generated, the sulfonic acid group in the amine sulfonate passivates the defects in the lead halide skeleton layer, and the amine cation in the amine sulfonate induces the formation of a quasi-two-dimensional perovskite structure at the top of the perovskite layer. 2+ The sulfonic acid group has strong chelation ability and can chelate with Pb 2+ The chelation effectively inhibits the reaction between the cation solution and the lead halide skeleton layer, delays the formation of perovskite crystals, and solves the problem of perovskite crystals formed at the top hindering the penetration of cations and reducing the uniformity of cation solution penetration, thereby reducing the internal defects of the perovskite layer caused by poor cation solution permeability and uneven penetration. At the same time, the relatively high concentration of amine ions at the top can induce the formation of a quasi-two-dimensional perovskite structure, which improves the stability of the perovskite grown at the top, and the relatively low concentration of amine ions at the bottom generates a three-dimensional perovskite structure. The ions in the three-dimensional perovskite layer are not easy to pass through the quasi-two-dimensional perovskite structure and escape to the surface of the perovskite layer, thereby effectively reducing the surface defects of the perovskite layer.

[0064] The temperature rising in the annealing process makes the reaction between the cation solution and the lead halide framework layer dominant, and the lead halide framework layer is more likely to be converted into a perovskite layer. The chelation between the sulfonic acid group and Pb 2+ During the annealing process, the chemical bond formed by the two is prone to breakage, and the hydrophobic groups carried by the amine group and the sulfonic acid group respectively have poor affinity with the perovskite, which promotes the amine group and the sulfonic acid group to separate from the perovskite crystal and be free at the interface and the surface of the perovskite crystal. The amine group is easy to combine and passivate with the iodine ion vacancy at the interface, and the sulfonic acid group is easy to combine and passivate with the lead vacancy at the interface. The hydrophobic groups in the amine group and the sulfonic acid group are easy to form a hydrophobic layer structure at the interface of the perovskite, reduce the interface contact between the perovskite layer and the transport layer, thereby reducing the deep trap state defects of the interface and improving the stability of the device.

[0065] In summary, compared with using only the amine group or the sulfonic acid group, by coordinating the amine group and the sulfonic acid group in the amine sulfonate with the hydrophobic group, the crystallization process and passivation behavior of the perovskite can be synergistically regulated, which can significantly reduce the internal and external defects of the perovskite, thereby better improving the performance of the perovskite layer. Moreover, in this process, no other impurity components that are not conducive to the stability of the perovskite are introduced, avoiding the problem of the introduction of impurity components causing the stability of the perovskite structure to decrease. The present application completes the regulation of the internal and external defects of the perovskite layer at the same time as the perovskite is prepared, and does not need to perform passivation treatment on the perovskite layer in the subsequent process, avoiding the introduction of new defects in the passivation process.

[0066] When the concentration of the amine sulfonate is too high, the crystallization resistance of the perovskite is too large, which makes it difficult for the perovskite to grow, and easily leads to the generation of a too thick quasi-two-dimensional perovskite layer, which is not conducive to the transport of carriers. When the concentration of the amine sulfonate is too low, it is not conducive to the regulation of the formation and crystallization process of the perovskite, and is also not conducive to the formation of the quasi-two-dimensional perovskite layer, which leads to the existence of more defects in the perovskite and at the interface.

[0067] In some embodiments, the hydrophobic group is one or more of a phenyl group, a long-chain alkyl group, and a trifluoromethyl group, and the long-chain alkyl group has more than 5 carbon atoms.

[0068] The phenyl group, the long-chain alkyl group, and the trifluoromethyl group are all groups with good hydrophobicity, which can give the amine group and the sulfonic acid group good hydrophobicity. When the perovskite starts to form, these groups do not affect the sulfonic acid group from playing a chelating role with Pb 2+ , thereby effectively delaying the formation of the perovskite crystal. These groups also do not affect the amine group from playing a role in inducing the crystallization of the perovskite, so that the perovskite at the top forms a quasi-two-dimensional perovskite. In the annealing process, these groups can help the sulfonic acid group and the amine group to separate from the perovskite crystal and be free at the interface of the perovskite, so that the sulfonic acid group and the amine group are combined with the iodine vacancy and the lead vacancy respectively, and the hydrophobic groups form a hydrophobic layer at the interface of the perovskite layer, thereby effectively reducing the interface defects of the perovskite layer itself and the interface contact defects.

[0069] In some embodiments, the concentration of the amine sulfonate is preferably 1 g / mL to 3 g / mL.

[0070] When the concentration of the amine sulfonate is 1 g / mL to 3 g / mL, the synergistic effect of the sulfonic group and the amine group is prominent, and the effect of regulating the perovskite crystallization behavior is better, which is beneficial to further reduce the internal and external defects of the perovskite.

[0071] In some embodiments, the cation of the amine sulfonate is one or both of the above, and the anion is

[0072] one or both of the above.

[0073] The cation and the anion of the above structure can be combined to form the amine sulfonate. Adding the amine sulfonate to the cation solution can effectively regulate the crystallization growth process of the perovskite layer and reduce the defects of the perovskite layer, thereby improving the energy conversion efficiency of the solar cell.

[0074] Exemplarily, the amine sulfonate is

[0075]

[0076] any one of the above.

[0077] In some embodiments, in the annealing step, the annealing temperature is 100°C to 150°C, and the annealing time is 20 min to 40 min.

[0078] Under the above annealing temperature and time, it is beneficial to promote the reaction of the cation solution and the lead halide framework layer to form perovskite crystals, and at the same time, it is beneficial to the sulfonic group and the amine group to separate from the perovskite crystals and be free to the perovskite interface, thereby fully exerting the passivation effect.

[0079] In some embodiments, the thickness of the lead halide framework layer is 200 nm to 500 nm; and / or, the thickness of the perovskite layer is 300 nm to 600 nm.

[0080] By controlling the thickness of the lead halide framework layer, it is beneficial to prepare a perovskite layer with a suitable thickness. By controlling the thickness of the perovskite layer within the above range, it is beneficial to obtain better absorption performance, absorb more light, and at the same time, obtain better carrier transport performance.

[0081] In some embodiments, one or more of iodomethylformamide, bromomethylformamide, chloromethylformamide, iodomethylamine, bromomethylamine, and chloromethylamine is further added to the cation solution; and / or, the lead halide framework layer is obtained by co-evaporation of lead iodide and cesium bromide.

[0082] Iodoformamide, bromoformamide, chloroformamide, iodomethylamine, bromomethylamine and chloromethylamine are common components of cation solution, and different iodoformamide, bromoformamide, chloroformamide, iodomethylamine, bromomethylamine and chloromethylamine can be selected according to the performance requirements of perovskite, and the components of the cation solution can be adjusted.

[0083] In a second aspect, the embodiments of the present application provide a solar cell.

[0084] A solar cell comprising the perovskite layer prepared by the method for preparing a perovskite layer mentioned in the first aspect.

[0085] In some embodiments, the perovskite layer is used in a solar cell with a textured structure.

[0086] When the bottom cell of the perovskite tandem solar cell is a silicon-based bottom cell with a textured structure, it is generally required that the functional film layers stacked on the silicon-based bottom cell subsequently have a textured structure, and therefore, the subsequent functional film layers arranged on the silicon-based bottom cell with a textured structure are also required to have a shape-retaining effect. The perovskite layer prepared by the two-step method has an excellent shape-retaining effect and can be applied to a textured solar cell with a shape-retaining requirement. In addition, the crystallization and passivation effect of the perovskite layer are well controlled, and the defect is low, which is beneficial to improving the conversion efficiency of the solar cell.

[0087] In some embodiments, the solar cell is a perovskite tandem solar cell, and the perovskite tandem solar cell comprises:

[0088] A silicon-based bottom cell;

[0089] A first transparent conductive layer stacked on one side of the silicon-based bottom cell away from the light-receiving surface;

[0090] A first transport layer stacked on one side of the first transparent conductive layer away from the silicon-based bottom cell;

[0091] A perovskite layer stacked on one side of the first transport layer away from the silicon-based bottom cell;

[0092] A second transport layer stacked on one side of the perovskite layer away from the silicon-based bottom cell;

[0093] A second transparent conductive layer stacked on one side of the second transport layer away from the silicon-based bottom cell;

[0094] A first electrode and a second electrode, the first electrode forms an ohmic contact with the silicon-based bottom cell, and the second electrode forms an ohmic contact with the second transparent conductive layer;

[0095] One of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer.

[0096] In some embodiments, the solar cell is a single-junction perovskite solar cell, which includes:

[0097] a transparent conductive substrate;

[0098] a first transport layer stacked on the transparent conductive substrate;

[0099] a perovskite layer stacked on a side of the first transport layer away from the transparent conductive substrate;

[0100] a second transport layer stacked on a side of the perovskite layer away from the transparent conductive substrate;

[0101] a first electrode forming an ohmic contact with the transparent conductive substrate and a second electrode forming an ohmic contact with the second transport layer.

[0102] In a third aspect, an embodiment of the present application provides a photovoltaic module.

[0103] A photovoltaic module includes the solar cell as mentioned in the second aspect.

[0104] The technical solutions of the present application will be further described below in combination with more specific embodiments and drawings.

[0105] Embodiment one

[0106] An embodiment of the present application provides a perovskite laminated solar cell, which includes:

[0107] a heterojunction bottom cell;

[0108] a first transparent conductive layer stacked on a light-receiving side of the heterojunction bottom cell, the material of the first transparent conductive layer being indium tin oxide, and the thickness of the first transparent conductive layer being 15 nm;

[0109] a hole transport layer stacked on a side of the first transparent conductive layer away from the heterojunction bottom cell, the material of the hole transport layer being 2-PACz ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid), and the thickness of the hole transport layer being 20 nm;

[0110] a perovskite layer stacked on a side of the hole transport layer away from the heterojunction cell, and the thickness of the perovskite layer being 450 nm;

[0111] an electron transport layer stacked on a side of the perovskite layer away from the heterojunction bottom cell, the material of the electron transport layer being C 60 , and the thickness of the electron transport layer being 15 nm;

[0112] a buffer layer stacked on a side of the electron transport layer away from the heterojunction cell, the material of the buffer layer being tin dioxide, and the thickness of the buffer layer being 14 nm;

[0113] A second transparent conductive layer stacked on the side of the buffer layer away from the heterojunction bottom cell, the material of the second transparent conductive layer is indium tin oxide, and the thickness is 90 nm;

[0114] A positive electrode and a negative electrode, the materials of the positive electrode and the negative electrode are silver, and the thicknesses of the positive electrode and the negative electrode are both 400 nm. The negative electrode forms an ohmic contact with the heterojunction bottom cell, and the positive electrode forms an ohmic contact with the second transparent conductive layer;

[0115] A reduction layer stacked on the side of the second transparent conductive layer away from the heterojunction bottom cell, the material of the reduction layer is magnesium fluoride, and the thickness is 100 nm.

[0116] The preparation method of the above-mentioned perovskite solar cell comprises the following steps:

[0117] Providing a heterojunction bottom cell, heating on a heating stage at 150℃ for 15 min to achieve the purpose of activating the substrate;

[0118] Preparation of a first transparent conductive layer on the heterojunction bottom cell by a magnetron sputtering method;

[0119] Preparation of a hole transport layer on the first transparent conductive layer by an evaporation method;

[0120] Preparation of a perovskite layer on the hole transport layer, the preparation method of the perovskite layer comprises the following steps:

[0121] Preparation of a lead iodide skeleton layer with a thickness of 350 nm on the hole transport layer by co-evaporation of lead iodide and cesium bromide, the evaporation rate ratio of lead iodide to cesium bromide is 10:1;

[0122] Spin coating of a cation solution on the lead iodide skeleton layer, the cation solution is obtained by dissolving 10 g of amine sulfonate, 300 mg of iodomethanimine, 70 mg of bromomethylamine and 40 mg of chloromethylamine in 5 mL of ethanol, 100 μL of the cation solution is taken by a pipette and spin coated on the lead iodide skeleton layer, the spin coating conditions are: the spin coating atmosphere is 5% RH (air humidity), the spin coating speed is 4000 rpm, the acceleration is 4000 rpm / s, the spin coating time is 30 s, and the structure of the amine sulfonate is as follows:

[0123]

[0124] 125℃ annealing for 20 min to obtain a perovskite layer;

[0125] Preparation of an electron transport layer on the perovskite layer by an evaporation method;

[0126] Preparation of a buffer layer on the electron transport layer by an atomic layer deposition method;

[0127] Preparation of a second transparent conductive layer on the buffer layer by a magnetron sputtering method;

[0128] Preparation of positive and negative electrodes.

[0129] Example two

[0130] The example of the present application provides a perovskite tandem solar cell, which is different from example one in that the amount of amine sulfonate is replaced by 0.25g instead of 10g, and the rest is consistent with example one.

[0131] Example three

[0132] The example of the present application provides a perovskite tandem solar cell, which is different from example one in that the amount of amine sulfonate is replaced by 5g instead of 10g, and the rest is consistent with example one.

[0133] Example four

[0134] The example of the present application provides a perovskite tandem solar cell, which is different from example one in that the amount of amine sulfonate is replaced by 20g instead of 10g, and the rest is consistent with example one.

[0135] Comparative example one

[0136] The comparative example of the present application provides a perovskite tandem solar cell, which is different from example one in that 1-butyl-3-methyl imidazole chloride is used instead of amine sulfonate.

[0137] Comparative example two

[0138] The comparative example of the present application provides a perovskite tandem solar cell, which is different from example one in that acetylcholine iodide is used instead of amine sulfonate.

[0139] Experiment

[0140] Wavelabs solar simulator is used to test the performance of perovskite tandem solar cell, test conditions: AM1.5, 1000W / m 2 , test environment temperature 25℃. Before testing, use standard silicon cell to correct the light intensity simulated by light source. Performance test is energy conversion efficiency, open circuit voltage, short circuit current and fill factor. The test results of experiment one are shown in table 1.

[0141] Table 1

[0142]

[0143] As can be seen from the comparison of the data of Example 1 and Comparative Example 1 in Table 1, compared with Comparative Example 1, the energy conversion efficiency of Example 1 is increased by 3.99%, the open circuit voltage is increased by 0.12 eV, and the fill factor is increased by 7.8%, which proves that compared with adding amine sulfonate and 1-butyl-3-methyl imidazole chloride salt in the cation solution, 1-butyl-3-methyl imidazole chloride salt has poor ability to adjust the crystallization and passivation behavior of the perovskite layer, and the addition of amine sulfonate can better regulate the crystallization process and passivation behavior of the perovskite, and significantly reduce the internal and external defects of the perovskite.

[0144] As can be seen from the comparison of the data of Example 1 and Comparative Example 2, compared with Comparative Example 2, the energy conversion efficiency of Example 1 is increased by 4.58%, the open circuit voltage is increased by 0.04 eV, and the fill factor is increased by 4.7%, which shows that although Comparative Example 1 and Comparative Example 2 both have ammonium salt components, the ability to adjust the crystallization and passivation behavior of the perovskite layer is obviously not as good as that of amine sulfonate, which shows that compared with other cation ammonium salt components, the addition of amine sulfonate has a prominent effect on improving the performance of the perovskite layer, which is conducive to breaking through the performance improvement bottleneck of solar cells and improving the energy conversion efficiency of solar cells.

[0145] The preparation method of the perovskite layer, the solar cell and the photovoltaic module disclosed in the above embodiments of the present application are described in detail, and specific examples are applied to explain the principles and implementation modes of the present application. The above embodiment descriptions are only used to help understand the preparation method of the perovskite layer, the solar cell and the photovoltaic module and the core idea thereof. Meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation modes and application ranges can be changed, and the content of the present specification should not be understood as a limitation of the present application.

Claims

1. A method for producing a perovskite layer, characterized by: The method comprises the following steps: preparing a lead halide skeleton layer; coating a cation solution on the lead halide skeleton layer, wherein an amine sulfonate is added in the cation solution, the concentration of the amine sulfonate is 0.05 g / mL-4 g / mL, and the structure of the amine sulfonate is shown in formula (1): wherein R1, R2, and R3 are hydrophobic groups; annealing to obtain the perovskite layer.

2. The method of claim 1, wherein: The concentration of the amine sulfonate is 1 g / mL-3 g / mL.

3. The method of claim 1, wherein: The hydrophobic groups are one or more of phenyl, long-chain alkyl, and trifluoromethyl, and the long-chain alkyl has more than 5 carbon atoms.

4. The method of producing a perovskite layer according to any one of claims 1 to 3, characterized by: The cation of the amine sulfonate is one or both of the following: the anion of the amidosulfonic acid salt is one or both of the following: the anion of the amidosulfonic acid salt is 5. The method of producing a perovskite layer according to claim 4, characterized by: The amine sulfonate is any of the foregoing.

6. The method of claim 1, wherein: In the annealing step, the annealing temperature is 100-150°C, and the annealing time is 20-40 min.

7. The method of claim 1, wherein: The thickness of the lead halide skeleton layer is 200-500 nm; and / or, the thickness of the perovskite layer is 300-600 nm.

8. The method of claim 1, wherein: One or more of iodomethylformamidine, bromomethylformamidine, chloromethylformamidine, iodomethylamine, bromomethylamine, and chloromethylamine is further added in the cation solution; and / or, the lead halide skeleton layer is obtained by co-evaporation of lead iodide and cesium bromide.

9. A solar cell, characterized by: The perovskite layer prepared by the method for preparing a perovskite layer according to any one of claims 1-8.

10. The solar cell of claim 9, wherein: The perovskite layer is used on the solar cell with a textured structure.

11. The solar cell of claim 10, wherein: The solar cell is a perovskite tandem solar cell, which comprises: a silicon-based substrate cell; a first transparent conductive layer stacked on a light-receiving side of the silicon-based substrate cell; a first transport layer stacked on a side of the first transparent conductive layer away from the silicon-based substrate cell; the perovskite layer stacked on a side of the first transport layer away from the silicon-based substrate cell; a second transport layer stacked on a side of the perovskite layer away from the silicon-based substrate cell; a second transparent conductive layer stacked on a side of the second transport layer away from the silicon-based substrate cell; a first electrode and a second electrode, wherein the first electrode forms ohmic contact with the silicon-based substrate cell, and the second electrode forms ohmic contact with the second transparent conductive layer; one of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer.

12. The solar cell of claim 9, wherein: The solar cell is a single-junction perovskite solar cell, which comprises: a transparent conductive substrate; a first transport layer stacked on the transparent conductive substrate; the perovskite layer stacked on a side of the first transport layer away from the transparent conductive substrate; a second transport layer stacked on a side of the perovskite layer away from the transparent conductive substrate; a first electrode and a second electrode, wherein the first electrode forms ohmic contact with the transparent conductive substrate, and the second electrode forms ohmic contact with the second transport layer.

13. A photovoltaic module, characterized by: The solar cell according to any one of claims 9-12.

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