Heat treatment apparatus and heat treatment method

Abstract

The invention provides a heat treatment apparatus and a heat treatment method. The heat treatment apparatus is provided with: a heating unit that supports a substrate and heats the substrate at a high temperature of 500 DEG C or higher; a chamber including a lid portion that forms a processing space on the heating portion by covering the heating portion, the surface of the lid portion on the processing space side being configured from a metal-containing material; and an exhaust unit that exhausts the processing space, in which the chamber has a gas supply unit that supplies a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a heat treatment apparatus and a heat treatment method. BACKGROUND

[0002] The heat treatment unit disclosed in Patent Literature 1 has a heating section that supports a substrate formed with a film and heats the substrate, and a chamber that has a peripheral wall section surrounding the periphery of the heating section and a lid section that forms a processing space on the heating section by covering the heating section in a state where a gap is provided between the peripheral wall section and the lid section. In addition, the heat treatment unit has a housing that accommodates the heating section and the chamber, a first gas supply section that supplies a first gas having a lower oxygen concentration than that of the atmosphere to the processing space, and an exhaust section that exhausts the processing space at an exhaust amount larger than the supply amount of the first gas. Furthermore, the heat treatment unit has a second gas supply section that supplies a second gas having a lower oxygen concentration than that of the atmosphere to the gap between the peripheral wall section and the lid section, and a third gas supply section that supplies a third gas having a lower oxygen concentration than that of the atmosphere to the outside of the chamber within the housing.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2022-7534 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The technology related to the present disclosure suppresses generation of a gas containing a metal constituting a member exposed to a high temperature from a surface of the member within a heat treatment apparatus.

[0008] SOLUTION TO PROBLEM

[0009] One embodiment of the present disclosure is a heat treatment apparatus including a heating section that supports a substrate and heats the substrate at a high temperature of 500°C or higher, a chamber that includes a lid section that forms a processing space on the heating section by covering the heating section, a surface of the lid section on a side of the processing space being composed of a metal-containing material, and an exhaust section that exhausts the processing space, wherein the chamber has a gas supply section that supplies a low-humidity gas having a lower humidity than that of the atmosphere to the processing space.

[0010] EFFECT OF THE INVENTION

[0011] According to the present disclosure, generation of a gas containing a metal constituting a member exposed to a high temperature from a surface of the member within a heat treatment apparatus can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is an explanatory view showing an outline of an internal structure of a coating and developing system as a substrate processing system including the heat treatment apparatus according to the present embodiment.

[0013] Figure 2 is a view showing an outline of an internal structure of a front side of the coating and developing system.

[0014] Figure 3 is a view showing an outline of an internal structure of a back side of the coating and developing system.

[0015] Figure 4 is a longitudinal sectional view schematically showing an outline of a structure of the heat treatment apparatus for high temperature.

[0016] Figure 5 is a longitudinal sectional view schematically showing an outline of a structure in a heating region.

[0017] Figure 6 is a flowchart for explaining an example of a process performed by the coating and developing system.

[0018] Figure 7 is an explanatory view showing an operation of the heat treatment apparatus for high temperature.

[0019] Figure 8 is an explanatory view showing an operation of the heat treatment apparatus for high temperature.

[0020] Figure 9 is an explanatory view showing an operation of the heat treatment apparatus for high temperature.

[0021] Figure 10 is an explanatory view showing an operation of the heat treatment apparatus for high temperature.

[0022] Figure 11 is a partial enlarged sectional view of a hot plate. DETAILED DESCRIPTION

[0023] In a manufacturing process of a semiconductor device or the like, a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") is subjected to a lithography process to form a resist pattern on the substrate. Then, etching of a processing target layer is performed using the resist pattern as a mask to form a desired pattern in the processing target layer.

[0024] In addition, with miniaturization of semiconductor devices and the like, etching is sought to be performed with a high aspect ratio when etching of a processing target layer is performed. As a technique for this, a technique is known in which a hard mask layer having higher etching resistance than a resist film is formed under the resist film and etching is performed using the hard mask layer as a mask. In addition, with the advent of 3D NAND devices and the like, a hard mask layer having higher etching resistance is sought.

[0025] The hard mask layer is sometimes formed by a CVD method, but sometimes formed by coating and heating of a treatment liquid for mask layer formation, which is higher in productivity. In the latter case, the substrate is sometimes required to be heated at a high temperature of 500°C or higher.

[0026] However, if heating is performed at a high temperature of 500°C or higher, a gas containing a metal constituting a member exposed to the high temperature inside the heat treatment apparatus sometimes occurs from the surface of the member. Specifically, for example, a gas containing chromium in stainless steel, which is a material of a chamber supporting the substrate and forming a treatment space on a hot plate, sometimes occurs from the chamber. Moreover, the gas containing the above-described metal (specifically, chromium) can adversely affect the substrate and devices related to the substrate.

[0027] Therefore, the technology of the present disclosure suppresses the occurrence of a gas containing a metal constituting a member exposed to a high temperature inside a heat treatment apparatus from the surface of the member.

[0028] In this regard, the inventors of the present application have found, as a result of intensive studies, that in the case where heating is performed at a high temperature of 500°C or higher, if the gas supplied to the treatment space is changed from a temperature and humidity adjusted gas containing moisture to nitrogen or dry air having a humidity lower than that of the atmosphere, the amount of chromium detected is significantly reduced. Specifically, in the case of the temperature and humidity adjusted gas, the amount of chromium detected on the front surface of the wafer W is about 8.5 x 10 10 atoms / cm 2 , but in the case of nitrogen or dry air, the amount thereof is about 0.1 x 10 10 atoms / cm 2 . The reason why such a phenomenon occurs is considered as follows. That is, in the case where heating is performed at a high temperature of 500°C or higher, if a gas containing moisture is supplied to the treatment space, a chromium oxide (Cr2O3) film formed on the surface of the chamber due to natural oxidation of stainless steel reacts with moisture (water vapor) or the like, and a gas containing chromium (specifically, CrO2(OH)2) is generated. On the other hand, if the gas supplied to the treatment space does not contain moisture, the above-described reaction does not occur, and thus the generation of the gas containing chromium can be suppressed. This is considered to be the reason.

[0029] The following embodiment is an embodiment based on the above insight.

[0030] Hereinafter, a heat treatment apparatus and a heat treatment method according to the present embodiment will be described with reference to the drawings. Furthermore, in the present specification and the drawings, the same reference numerals are attached to elements having substantially the same function structure, and thus repeated description is omitted.

[0031] <coating and developing system>

[0032] Figure 1This is an explanatory diagram showing a general outline of the internal structure of the coating and developing system, which is a substrate processing system and includes the heat treatment apparatus according to this embodiment. Figure 2 and Figure 3 These are diagrams showing the outlines of the internal structure of the front and back sides of the coating and developing system.

[0033] like Figures 1-3 As shown, the coating and developing system 1 includes: a cassette station 2, into which cassettes C, which serve as containers for accommodating multiple wafers W, are moved in and out; and a processing station 3, which is equipped with various processing devices for performing prescribed processes such as resist coating. Furthermore, the coating and developing system 1 has a structure that connects the cassette station 2, the processing station 3, and the interface station 5 into a single unit, the interface station 5 being used for transferring wafers W between the processing station 3 and an exposure device 4 adjacent to the processing station 3.

[0034] The cassette station 2 is, for example, divided into a cassette loading / unloading section 10 and a wafer transport section 11. For example, the cassette loading / unloading section 10 is located in the negative Y-direction of the coating and developing system 1. Figure 1 The end on the left side (towards the left). A box loading / unloading section 10 is provided with a box mounting platform 12. Multiple, for example, four mounting plates 13 are provided on the box mounting platform 12. The mounting plates 13 are positioned in the horizontal X direction ( Figure 1 They are arranged in a row in the vertical direction. When the cartridges C are moved in and out of the coating and developing system 1, the cartridges C can be placed on these mounting plates 13.

[0035] A transport device 20 for transporting wafers W is provided in the wafer transport section 11. The transport device 20 is configured to move freely along a transport path 21 extending in the X direction. The transport device 20 can also move freely in the vertical direction and around the vertical axis (θ direction), and can transport wafers W between the cassette C on each mounting plate 13 and the transfer device of the third block G3 of the processing station 3 described later.

[0036] Processing station 3 is equipped with multiple blocks containing various devices, such as blocks G1, G2, G3, and G4 (the first to fourth blocks). For example, on the front side of processing station 3... Figure 1 The first G1 is located on the negative X-direction side of the processing station 3. Figure 1 A second G2 is installed on the positive X-direction side. Additionally, on the side of processing station 3 adjacent to box station 2 ( Figure 1 A third G3 is installed on the negative Y-direction side of processing station 3, near the interface station 5. Figure 1 A fourth G4 is set on the positive Y-direction side.

[0037] like Figure 2As shown, multiple liquid processing devices are arranged sequentially from bottom to top on the first G1, such as a developing device 30, a hard mask forming device 31, and a resist coating device 32. The developing device 30 performs a developing process on the wafer W. Specifically, the developing device 30 develops the resist film on the wafer W that has undergone post-exposure heat treatment (PEB treatment). The hard mask forming device 31 performs a hard mask forming process by coating the wafer W with a hard mask forming solution to form a hard mask. The hard mask is, for example, a zirconium oxide film. The resist coating device 32 performs a resist coating process by coating the wafer W with a resist solution to form a resist film.

[0038] For example, three of each of the developing apparatus 30, hard mask forming apparatus 31, and resist coating apparatus 32 are arranged horizontally. Furthermore, the number and arrangement of these developing apparatus 30, hard mask forming apparatus 31, and resist coating apparatus 32 can be arbitrarily selected.

[0039] In the developing apparatus 30, the hard mask forming apparatus 31, and the resist coating apparatus 32, a specified processing solution is coated on the wafer W, for example, by spin coating. In spin coating, for example, the processing solution is sprayed from a nozzle onto the wafer W, and the wafer W is rotated to spread the processing solution on the surface of the wafer W.

[0040] For example, Figure 3 As shown, a heat treatment apparatus 40 and a high-temperature heat treatment apparatus 41 are arranged in the vertical and horizontal directions on the second G2. The heat treatment apparatus 40 performs heat treatment on the wafer W, and the high-temperature heat treatment apparatus 41 performs heat treatment on the wafer W including heating at a high temperature of 500°C or higher. The number and arrangement of these heat treatment apparatuses 40 and high-temperature heat treatment apparatuses 41 can be arbitrarily selected. In addition, the heat treatment apparatus 40 performs a pre-baking treatment of the hard mask on the wafer W after hard mask formation and before heat treatment by the high-temperature heat treatment apparatus. In addition, the heat treatment apparatus 40 performs a pre-baking treatment of the wafer W after resist coating (hereinafter referred to as "PAB treatment"), a PEB treatment of the wafer W after exposure treatment, and a post-baking treatment of the wafer W after development treatment (hereinafter referred to as "POST treatment"). In addition, the high-temperature heat treatment apparatus 41 performs high-temperature heat treatment on the wafer W after the hard mask pre-baking treatment at a high temperature of 500°C or higher.

[0041] For example, multiple connection devices 50, 51, 52, 53, 54, 55, and 56 are sequentially arranged from bottom to top on the third G3. In addition, multiple connection devices 60, 61, and 62 are sequentially arranged from bottom to top on the fourth G4.

[0042] likeFigure 1 As shown, a wafer transport region D is formed in the area surrounded by the first G1 to the fourth G4. A transport device 70, for example a substrate transport device for transporting wafers W, is disposed in the wafer transport region D.

[0043] The conveying device 70, for example, has a conveying arm 70a that can move freely along the Y direction, the θ direction, and the vertical direction. The conveying device 70 is capable of moving the conveying arm 70a holding the wafer W within the wafer conveying area D and conveying the wafer W to a predetermined location within the surrounding first G1, second G2, third G3, and fourth G4 blocks. The conveying device 70, for example, is as follows... Figure 3 As shown, multiple units are arranged in the vertical direction, for example, a device capable of moving wafer W to a specified height position at the same level for each of blocks G1 to G4.

[0044] In addition, a shuttle conveyor 80 is provided in the wafer transport area D to linearly transport wafers W between the third G3 and the fourth G4.

[0045] The shuttle conveyor 80 enables the supported wafer W to move linearly along the Y direction and to transport the wafer W between the transfer device 52 of the third G3 and the transfer device 62 of the fourth G4 at the same height position.

[0046] like Figure 1 As shown, a conveying device 90 is provided on the positive X-direction side of the third block G3. The conveying device 90 has a conveying arm 90a that can move freely in, for example, the θ-direction and the vertical direction. The conveying device 90 can move the conveying arm 90a holding the wafer W in the vertical direction and convey the wafer W to the various transfer devices within the third block G3.

[0047] Interface station 5 is equipped with a transport device 100 and a transfer device 101. The transport device 100 has a transport arm 100a that can move freely, for example, along the θ direction and the vertical direction. The transport device 100 is capable of holding the wafer W in the transport arm 100a and transporting the wafer W between the various transfer devices, the transfer device 101 and the exposure device 4 within the fourth block G4.

[0048] like Figure 1As shown, at least one control section 200 is provided in the above coating and developing system 1. The control section 200 processes instructions executable by a computer that causes the coating and developing system 1 to perform various processes described in the present disclosure. The control section 200 can be configured to control each element of the coating and developing system 1 to perform various processes described herein. In one embodiment, part or all of the control section 200 can be included in the coating and developing system 1. The control section 200 can include a processing section, a storage section, and a communication interface. The control section 200 is implemented by, for example, a computer. The processing section can be configured to read out a program that provides executable logic or routines for various control actions from the storage section, and perform various control actions by executing the read-out program. The program can be pre-stored in the storage section, or acquired via a medium as needed. The acquired program is stored in the storage section, read out by the processing section from the storage section, and executed. The medium can be various storage media H readable by a computer, or a communication line connected to the communication interface. The storage media H can be either transitory or non-transitory. The processing section can be a CPU (Central Processing Unit), or one or more circuits. The storage section can include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface can communicate with the coating and developing system 1 via a communication line such as a LAN (Local Area Network).

[0049] <High-temperature heat treatment device 41>

[0050] Next, the high-temperature heat treatment device 41 will be described. Figure 4 is a longitudinal sectional view schematically showing an outline of the structure of the high-temperature heat treatment device 41. Figure 5 is a longitudinal sectional view schematically showing an outline of the structure within the heating region 310 described later.

[0051] As Figure 4 shown, the high-temperature heat treatment device 41 has a processing container 300 that is an internal enclosure. A wafer W loading / unloading port 301 is formed in a side wall of the processing container 300 on the side of the wafer conveyance region D, and a shutter gate 302 is provided in the wafer W loading / unloading port 301.

[0052] The interior of the processing container 300 is divided into an upper space S1 and a lower space S2 by a partition wall 303. The upper space S1 is provided with a heating region 310 for heating the wafer W and a cooling region 311 for cooling the wafer W. The heating region 310 and the cooling region 311 are arranged along the depth direction of the device (Y direction in the figure), with the cooling region 311 located closer to the loading / unloading outlet 301 than the heating region 310.

[0053] like Figure 5 As shown, a hot plate 320, serving as a heating element, is provided in the heating region 310 to support the wafer W and heat it at a high temperature of 500°C or higher. The hot plate 320 has a thick, circular plate-shaped portion 321. The diameter of the plate-shaped portion 321 is larger than the diameter of the wafer W. A heater 322 is, for example, built into the plate-shaped portion 321. Furthermore, the plate-shaped portion 321 is, for example, made of silicon carbide, which has high thermal conductivity. The temperature of the hot plate 320 (specifically, the temperature of the plate-shaped portion 321) is controlled, for example, by the control unit 200. By using the heater 322, the wafer W placed on the hot plate 320 or the plate-shaped portion 321 of the hot plate 320 is heated to a predetermined temperature of 500°C or higher.

[0054] Furthermore, the hot plate 320 is supported on the supporting base wall 324, for example, via a heat insulation plate 323. Both the heat insulation plate 323 and the supporting base wall 324 are formed in a circular plate shape. The diameter of the heat insulation plate 323 is the same as the diameter of the hot plate 320. On the other hand, the diameter of the supporting base wall 324 is larger than the diameter of the hot plate 320. Figure 4 As shown, a support base wall 324 is arranged at intervals above the partition wall 303. The support base wall 324 can also be fixed to the partition wall 303 by means of a fixing member (not shown).

[0055] Multiple (e.g., three) lifting pins 330 are provided to support the wafer W from below and to move the wafer W up and down relative to the hot plate 320. The multiple lifting pins 330 are moved up and down by a lifting drive unit 331 with a drive source such as a motor. Furthermore, each lifting pin 330 is inserted into a corresponding through hole 332 and can protrude from the upper surface of the hot plate 320 through the through hole 332. The through holes 332 are, for example, formed to pass through the hot plate 320, the heat insulation plate 323, the support bottom wall 324, and the partition wall 303 in the vertical direction.

[0056] The lifting drive unit 331 can lift the wafer W by moving multiple lifting pins 330 supporting the wafer W up and down. The lifting drive unit 331 is provided, for example, in the lower space S2.

[0057] Furthermore, the through-hole 332 is connected to an exhaust device 334, such as a vacuum pump, via an exhaust pipe 333 to exhaust air into the processing space S3 (described later) via the through-hole 332. An exhaust device assembly 335 is provided in the exhaust pipe 333, which includes a valve for switching the exhaust air (hereinafter referred to as pin exhaust) through the through-hole 332 on / off. The exhaust device 334 and the exhaust device assembly 335 are controlled by the control unit 200.

[0058] Additionally, a chamber 340 is provided in the heating zone 310. The chamber 340 has a peripheral wall portion 341 and an upper chamber 342 that serves as a cover portion.

[0059] like Figure 5 As shown, the peripheral wall portion 341 is configured with a gap g1 between it and the hot plate 320 (specifically, between it and the side surfaces of the hot plate 320 and the heat insulation plate 323). This peripheral wall portion 341 is formed extending upward from the periphery of the supporting bottom wall 324 and is annular in plan view. The inner peripheral surface of the peripheral wall portion 341 faces the outer peripheral surfaces of the hot plate 320 and the heat insulation plate 323. Furthermore, the gap g1 is annular in plan view.

[0060] Furthermore, a peripheral exhaust section 350 is provided on the peripheral wall portion 341 for venting exhaust to the processing space S3 described later via the gap g1. The peripheral exhaust section 350 has a plurality of exhaust holes 351 opening into the gap g1. The plurality of exhaust holes 351 are arranged at predetermined intervals along the circumferential direction of the peripheral wall portion 341 on the inner circumferential surface of the peripheral wall portion 341. The peripheral exhaust section 350 also has an exhaust path 352 formed inside the peripheral wall portion 341. The exhaust path 352 is connected to the end of the exhaust hole 351 on the side opposite to the gap g1. The exhaust path 352 is formed in a circular shape when viewed from above, extending along the peripheral wall portion 341. In addition, the exhaust path 352 is connected to an exhaust device 354, such as a vacuum pump, via an exhaust pipe 353. An exhaust device assembly 355 is provided on the exhaust pipe 353, which includes a valve or the like for switching the exhaust of the peripheral exhaust section 350 on / off. The exhaust device 354 and the exhaust equipment group 355 are controlled by the control unit 200.

[0061] The upper chamber 342 forms a processing space S3 on the hot plate 320 by covering it. The upper chamber 342 is configured to be raised and lowered by a lifting drive unit (not shown). The upper chamber 342 descends to near the peripheral wall portion 341, thereby forming the processing space S3.

[0062] Additionally, the upper chamber 342 may have, for example, a top wall portion 343 and a side wall portion 344.

[0063] The top wall portion 343 is formed as a circular plate with a diameter similar to that of the supporting bottom wall 324, and is positioned facing the upper surface of the hot plate 320.

[0064] The side wall portion 344 is formed in a cylindrical shape so as to extend downward from the outer edge of the top wall portion 343, and the lower end surface thereof is arranged so as to face the upper end surface of the peripheral wall portion 341.

[0065] In a state in which the upper chamber 342 is close to the peripheral wall portion 341, a gap g2 is formed between the upper end surface of the side wall portion 348 and the lower end surface of the peripheral wall portion 341. The gap g2 is formed in a circular ring shape so as to surround the periphery of the processing space S3.

[0066] Further, the upper chamber 342 is configured to be heated. For example, a heater (not shown) is built in the top wall portion 343, and the upper surface of the top wall portion 343 is adjusted to a prescribed temperature that is lower in temperature (for example, 350°C to 400°C) than the hot plate 320, by the control section 200.

[0067] The upper chamber 342 is composed of a metal material, specifically, stainless steel, more specifically, SUS304. Therefore, the surface of the upper chamber 342 on the processing space S3 side is composed of a metal material, specifically, a chromium oxide film formed by natural oxidation of stainless steel.

[0068] Further, the chamber 340 has a shower head 360 as a gas supply portion. Specifically, the upper chamber 342 has the shower head 360.

[0069] The shower head 360 supplies a low-humidity gas having a humidity lower than that of the atmosphere to the processing space S3. The low-humidity gas is, for example, dry air or nitrogen. The humidity of the low-humidity gas in the processing space S3 is adjusted to be, for example, 0.01% or less. The shower head 360 is, for example, composed of at least a portion of the top wall portion 343.

[0070] A plurality of gas ejection holes 361 are formed in the lower surface of the shower head 360. The plurality of gas ejection holes 361 are arranged uniformly in the lower surface of the shower head 360 except for a portion of the lower surface of the shower head 360 other than the exhaust port 371 described later. The shower head 360 is connected to a gas supply pipe 362. Further, the gas supply pipe 362 is connected to a gas supply source 363 that supplies the low-humidity gas to the shower head 360. Further, a supply device group 364 including a valve that switches on / off of the supply of the low-humidity gas to the shower head 360, a flow rate adjusting valve, and the like is provided in the gas supply pipe 362. The supply device group 364 is controlled by the control section 200. The low-humidity gas supplied from the gas supply source 363 to the shower head 360 via the gas supply pipe 362 is ejected toward the lower side from the gas ejection holes 361.

[0071] Furthermore, a central exhaust section 370 and an outer peripheral exhaust section 380 are provided on the spray head 360. These central exhaust sections 370, outer peripheral exhaust sections 380, and the aforementioned peripheral exhaust sections 350 constitute an exhaust section for venting the processing space S3.

[0072] The central exhaust unit 370 exhausts air into the processing space S3 from above the center of the hot plate 320. The central exhaust unit 370 has an exhaust port 371. The exhaust port 371 is located at the center of the lower surface of the spray head 360 and opens downward. The central exhaust unit 370 exhausts air into the processing space S3 through this exhaust port 371.

[0073] Furthermore, the central exhaust unit 370 has a central exhaust path 372 extending upward from the exhaust port 371. The central exhaust path 372 is connected to an exhaust device 374, such as a vacuum pump, via an exhaust pipe 373. An exhaust device assembly 375 is provided in the exhaust pipe 373, which includes a valve for switching the exhaust from the central exhaust unit 370 on / off. The exhaust device 374 and the exhaust device assembly 375 are controlled by the control unit 200.

[0074] The peripheral exhaust section 380 exhausts air into the processing space S3 from above the outer periphery of the hot plate 320 (specifically, from above the portion slightly outside the periphery of the wafer W). The peripheral exhaust section 380 has an exhaust port 381. The exhaust port 381 opens downward from the lower surface of the top wall portion 343 in a manner that surrounds the outer periphery of the spray head 360. The exhaust port 381 may also be an exhaust port with multiple exhaust holes arranged along the outer periphery of the spray head 360. The peripheral exhaust section 380 exhausts air into the processing space S3 via this exhaust port 381.

[0075] Furthermore, the peripheral exhaust section 380 has a peripheral exhaust path 382 that communicates with the exhaust port 381. The peripheral exhaust path 382 is connected to an exhaust device 384, such as a vacuum pump, via an exhaust pipe 383. An exhaust device assembly 385 is provided in the exhaust pipe 383, which includes valves for switching the exhaust on / off. The exhaust device 384 and the exhaust device assembly 385 are controlled by the control unit 200.

[0076] like Figure 4 As shown, a cooling plate 400 is provided in the cooling region 311 as a cooling section that supports and cools the wafer W. The cooling plate 400 is, for example, formed into a circular plate with a thickness. Temperature regulating components (not shown), such as cooling water and Peltier elements, are built into the cooling plate 400. For example, the temperature of the cooling plate 400 is controlled by the control unit 200 to cool the wafer W placed on the cooling plate 400 at a predetermined temperature.

[0077] A plurality of (for example, three) lift pins 410 that support the wafer W from below and raise and lower the wafer W with respect to the cooling plate 400 are provided. The plurality of lift pins 410 are raised and lowered by a lift drive section 411 having a driving source such as a motor. In addition, the lift pins 410 are respectively inserted through through-holes (not shown) formed in the cooling plate 400, and are able to protrude through the through-holes from the upper surface of the cooling plate 400.

[0078] The lift drive section 411 is able to raise and lower the wafer W by raising and lowering the plurality of lift pins 410 that support the wafer W. The lift drive section 411 is provided, for example, in the cooling region 311 in the upper space S1.

[0079] In addition, a conveyance mechanism 420 that conveys the wafer W between the heating region 310 and the cooling region 311 is provided in the processing container 300. The conveyance mechanism 420 has a holding arm 421 and a drive section 422. The holding arm 421 is provided in a space above the heat plate 320 and the cooling plate 400 in the upper space S1, and horizontally holds the wafer W. The holding arm 421 is configured to be able to hand over the wafer W between the plurality of lift pins 330 or the plurality of lift pins 410. The drive section 422 has a driving source such as a motor, and moves the holding arm 421 in the apparatus depth direction (the Y direction of the drawing).

[0080] In addition, the processing container 300 has a gas supply section 430 that supplies a low-humidity gas to a space outside the chamber 340 in the processing container 300.

[0081] The gas supply section 430 has a shower head 431 as a cooling region gas supply section and a shower head 432 as a heating region gas supply section. In addition, the types of the low-humidity gases supplied from the shower head 360, the shower head 431, and the shower head 432 can be the same or different. In the following description, the types of the low-humidity gases supplied from the shower head 360, the shower head 431, and the shower head 432 are assumed to be the same.

[0082] The shower head 431 supplies the low-humidity gas to the cooling region 311. The shower head 431 is provided in the cooling region 311, specifically, above the cooling plate 400 in the cooling region 311. A plurality of gas ejection holes 433 are formed in the lower surface of the shower head 431. The plurality of gas ejection holes 433 are uniformly arranged in the lower surface of the shower head 431. The shower head 431 is connected to a gas supply pipe 434. Also, the gas supply pipe 434 is connected to a gas supply source 435 that supplies the low-humidity gas to the shower head 431. Further, a supply device group 436 including a valve that switches on / off of the supply of the low-humidity gas to the shower head 431, a flow rate adjusting valve, and the like is provided in the gas supply pipe 434. The supply device group 436 is controlled by the control section 200. The low-humidity gas supplied from the gas supply source 435 to the shower head 431 is ejected toward the lower side from the gas ejection holes 433.

[0083] The shower head 432 supplies the low-humidity gas to the heating region 310. The shower head 432 is provided in the heating region 310. Specifically, the shower head 432 is provided between the hot plate 320 and the cooling plate 400 in the device depth direction (Y direction of the drawing) in the heating region when viewed from above. Further, the shower head 432 is provided at a position higher than the upper chamber 342.

[0084] Also, the shower head 432 is formed in a rod shape extending in a direction orthogonal to the device depth direction (Y direction of the drawing) and the vertical direction. A plurality of gas ejection holes 437 are provided in the shower head 432. The plurality of gas ejection holes 437 are formed, for example, in the face of the side opposite to the side of the cooling region 311 of the shower head 432. Further, the plurality of gas ejection holes 437 are arranged at a prescribed interval along the extending direction of the shower head 432.

[0085] Also, the shower head 432 is connected to a gas supply pipe 438. Also, the gas supply pipe 438 is connected to a gas supply source 439 that supplies the low-humidity gas to the shower head 432. Further, a supply device group 440 including a valve that switches on / off of the supply of the low-humidity gas to the shower head 432, a flow rate adjusting valve, and the like is provided in the gas supply pipe 438. The supply device group 440 is controlled by the control section 200. The low-humidity gas supplied from the gas supply source 439 to the shower head 432 is ejected toward the space above the upper chamber 342 from the gas ejection holes 437.

[0086] <wafer processing>

[0087] Next, an example of the processing of the coating and developing system 1 will be described with focus on the processing by the high-temperature heat treatment apparatus 41. Figure 6 is a flowchart for explaining an example of the processing of the coating and developing system 1. Figures 7-10are explanatory diagrams showing the operation of the high-temperature heat treatment apparatus 41. Furthermore, the following processing is performed under the control of the control section 200. Also, hereinafter, it is assumed that the high-temperature heat treatment apparatus 41 possessed by the coating and developing system 1 is one.

[0088] As shown in Figure 6 , in the high-temperature heat treatment apparatus 41, even in the idle state, the low-humidity gas is supplied from the shower head 360 into the processing space S3 (step S1). The idle state refers to a state in which the heat plate 320 is warmed up (for example, warmed up to 500°C or higher) and processing of the wafer W using the high-temperature heat treatment apparatus 41 is not scheduled.

[0089] In the idle state, specifically, as shown in Figure 7 (A), the upper chamber 342 is lowered to form the processing space S3. Also, the processing space S3 is exhausted using the central exhaust section 370, exhausted using the outer peripheral exhaust section 380, exhausted using the peripheral exhaust section 350, and exhausted using the pin exhaust, and in this state, the nitrogen gas is supplied as the low-humidity gas from the shower head 360. Also, in the idle state, the total of the exhaust amounts from the processing space S3 is set to be larger than the supply amount of the nitrogen gas from the shower head 360 to the processing space S3. Thus, the processing space S3 is under negative pressure compared to the space outside the chamber 340.

[0090] In this way, even in the idle state, the humidity in the processing space S3 can be maintained to be low by supplying the low-humidity gas from the shower head 360 into the processing space S3. Also, by setting the processing space S3 to be under negative pressure as described above, even if a gas containing the constituent metal (specifically, chromium) of the upper chamber 342 is generated, leakage of the gas to the outside of the chamber 340 can be suppressed.

[0091] Furthermore, in the idle state, the supply of the low-humidity gas from the shower head 431 and the supply of the low-humidity gas from the shower head 432 are not performed. This is to suppress the consumption amount of the low-humidity gas.

[0092] When the process using the high-temperature heat treatment apparatus 41 is read in by the control section 200 and the processing of the wafer W is scheduled for the high-temperature heat treatment apparatus 41 (step S2), the high-temperature heat treatment apparatus 41 exits the idle state and starts to supply the nitrogen gas as the low-humidity gas from the gas supply section 430 to the outside of the chamber 340 in the processing vessel 300 (step S3). For example, as shown in Figure 7 (B), the nitrogen gas is supplied from both the shower head 431 and the shower head 432 of the gas supply section 430.

[0093] Also, the wafer W as the processing target is taken out from the cassette C by the conveyance device 20 and is conveyed to the handoff device 53 of the third block G3 of the processing station 3.

[0094] Further, after the idle state is released, the exhaust of the processing space S3 and the supply of nitrogen gas from the shower head 360 to the processing space S3 are performed as in the idle state, and the total of the exhaust amount from the processing space S3 is set to be larger than the supply amount of nitrogen gas from the shower head 360.

[0095] Next, a hard mask is formed on the wafer W (step S4).

[0096] Specifically, the wafer W is carried to the heat treatment device 40 of the second block G2 by the conveyance device 70 to perform a temperature adjustment process. Thereafter, the wafer W is carried to the hard mask formation device 31 of, for example, the first block G1 by the conveyance device 70 to form a coating film of a processing liquid for forming a chromium oxide film on the wafer W. Next, the wafer W is carried to the heat treatment device 40 of the second block G2 by the conveyance device 70 to perform a pre-baking process for a hard mask to cure the coating film of the processing liquid for forming a chromium oxide film on the wafer W to form a chromium oxide film as a hard mask. Next, the wafer W is returned to the transfer device 53 of the third block G3. Thereafter, the wafer W is carried to the transfer device 54 of the same third block G3 by the conveyance device 90.

[0097] Next, the supply of nitrogen gas to the outside of the chamber 340 in the processing container 300 is stopped, and the wafer W is carried into the processing container 300 of the high-temperature heat treatment device 41 (step S5).

[0098] Specifically, the wafer W is carried to the front of the carrying-in / out port 301 in a state in which the opening and closing gate 302 of the high-temperature heat treatment device 41 is closed by the conveyance device 70. In addition, the supply of nitrogen gas from the shower heads 431 and 432 is stopped. Thereafter, as shown in (A) of FIG. 9, the carrying-in / out port 301 is set to an open state by the opening and closing gate 302, the wafer W is carried into the processing container 300 via the carrying-in / out port 301, and is transferred from the conveyance device 70 to the lift pins 410 in the cooling region 311. Then, the carrying-in / out port 301 is set to a closed state by the opening and closing gate 302, and the processing container 300 is set to a sealed state. Figure 8

[0099] Thereafter, the supply of nitrogen gas to the outside of the chamber 340 in the processing container 300 is restarted, and the exhaust by the central exhaust portion 370 is stopped, and then the wafer W is carried from the cooling region 311 to the heating region 310 (step S6).

[0100] Specifically, first, as shown in (A) of FIG. 10, the wafer W is carried to the front of the carrying-in / out port 301 in a state in which the opening and closing gate 302 of the high-temperature heat treatment device 41 is closed by the conveyance device 70. In addition, the supply of nitrogen gas from the shower heads 431 and 432 is stopped. Figure 8 ​As shown in (B) of FIG. 4, the supply of nitrogen gas from the shower heads 431 and 432 is restarted. At the same time, the exhaust by the central exhaust portion 370 is stopped. The exhaust amount of the peripheral exhaust portion 380 and the like are set so that the total of the exhaust amount from the processing space S3 is larger than the supply amount of nitrogen gas from the shower heads 360 after the exhaust by the central exhaust portion 370 is stopped.

[0101] Next, the wafer W is transferred from the lift pins 410 to the holding arms 421 of the transfer mechanism 420. Next, the upper chamber 342 is raised, and the holding arms 421 holding the wafer W are moved from the cooling region 311 to the heating region 310, and the wafer W is transferred from the holding arms 421 to the hot plate 320 via the lift pins 330. Thus, as shown in (A) of FIG. 5, the wafer W is placed on the hot plate 320. Figure 9

[0102] In this step S6, the wafer W can be left in the cooling region 311 for a prescribed time after the supply of nitrogen gas is restarted. This waiting is not necessary in the case where dry air is used as the low-humidity gas.

[0103] Next, the wafer W is heated at a high temperature of 500°C or higher (step S7).

[0104] Specifically, as shown in (B) of FIG. 6, the upper chamber 342 is lowered to form the processing space S3, and thus the heating of the wafer W at a high temperature is started. Figure 9

[0105] In the heating at the high temperature, the total of the exhaust amount from the processing space S3 is also set to be larger than the supply amount of nitrogen gas from the shower heads 360.

[0106] After the heating of the wafer W at the high temperature is started, when a prescribed time elapses, the exhaust by the central exhaust portion 370 is started. At this time, the exhaust amount of the central exhaust portion 370 and the like are set so that the total of the exhaust amount from the processing space S3 is larger than the supply amount of nitrogen gas from the shower heads 360.

[0107] After the exhaust by the central exhaust portion 370 is started, when a prescribed time elapses, the wafer W is raised to an intermediate position by the lift pins 330. In this state, the sublimates from the hard mask on the wafer W are recovered.

[0108] After being raised to the intermediate position, when a prescribed time elapses, the exhaust by the central exhaust portion 370 is stopped. Next, the upper chamber 342 is raised. Thereafter, the wafer W is raised to a transfer position by the lift pins 330. The transfer position is a position at which the wafer W is transferred between the lift pins 330 and the holding arms 421 of the transfer mechanism 420.

[0109] ​​In the heating at this high temperature, the supply flow rate of the low-humidity gas supplied to the processing space S3 and the like are set so that the humidity in the processing space S3 is 0.01% or less.

[0110] Next, the wafer W is carried from the heating region 310 to the cooling region 311 (step S8).

[0111] Specifically, the wafer W is handed over from the lift pins 330 to the holding arms 421 of the carrying mechanism 420. Thereafter, the holding arms 421 holding the wafer W are moved from the heating region 310 to the cooling region 311, and the wafer W is handed over from the holding arms 421 to the cooling plate 400 via the lift pins 410. Thus, as shown in FIG. 6, the wafer W is placed on the cooling plate 400. In addition, the upper chamber 342 is lowered to form the processing space S3. Figure 10

[0112] Next, the wafer W is cooled (step S9). Specifically, after the wafer W is placed on the cooling plate 400, a prescribed time is waited.

[0113] Thereafter, the supply of nitrogen gas to the outside of the chamber 340 in the processing vessel 300 is stopped, and the wafer W is carried out to the outside of the processing vessel 300 of the high-temperature heat treatment apparatus 41 (step S10).

[0114] Specifically, the supply of nitrogen gas from the shower heads 431 and 432 is stopped. Next, the carrying-in / out port 301 is set to the open state by opening and closing the gate 302, and the wafer W is handed over from the cooling plate 400 to the carrying apparatus 70 via the lift pins 410. Then, the wafer W is carried out to the outside of the processing vessel 300 via the carrying-in / out port 301. Further, thereafter, the carrying-in / out port 301 is set to the closed state by opening and closing the gate 302, and the processing vessel 300 is again set to the airtight state.

[0115] Next, the wafer W is sequentially subjected to subsequent processing (step Sll).

[0116] Specifically, the wafer W is carried to the resist coating apparatus 32 by the carrying apparatus 70, and a resist film is formed on the wafer W. Thereafter, the wafer W is carried to the heat treatment apparatus 40 by the carrying apparatus 70, and PAB processing is performed. Thereafter, the wafer W is carried to the handover apparatus 55 of the third block G3 by the carrying apparatus 70.

[0117] Next, the wafer W is carried to the handover apparatus 52 by the carrying apparatus 90, and to the handover apparatus 62 of the fourth block G4 by the shuttle carrying apparatus 80. Thereafter, the wafer W is carried to the exposure apparatus 4 by the carrying apparatus 100 of the interface station 5, and exposure processing is performed in a prescribed pattern.

[0118] ​Next, the wafer W is carried by the conveyance device 100 to the handoff device 60 of the fourth block G4. After that, the wafer W is carried by the conveyance device 70 to the heat treatment device 40, and PEB processing is performed.

[0119] Next, the wafer W is carried by the conveyance device 70 to the developing processing device 30 to be developed. After the development is completed, the wafer W is carried by the conveyance device 70 to the heat treatment device 40, and POST processing is performed.

[0120] After that, the wafer W is carried by the conveyance device 70 to the handoff device 50 of the third block G3, and then carried by the conveyance device 20 of the cassette station 2 to the prescribed cassette C of the stage 13.

[0121] By so doing, the series of processing of the coating and developing system 1 is completed.

[0122] <Material of the support member>

[0123] Next, the material of the support member of the heat plate 320 will be described using Figure 11 Figure 11 is a partial enlarged sectional view of the heat plate 320.

[0124] As shown in Figure 11 , the heat plate 320 has a support member 500. A plurality of support members 500 are provided in the plate-shaped portion 321 of the heat plate 320. Each support member 500 is provided in a concave portion 600 which is concave downward and is formed separately in the plate-shaped portion 321. In the bottom portion in the concave portion 600, a stepped portion 601 is formed along the inner peripheral surface of the concave portion 600.

[0125] The support member 500 abuts against the back surface of the wafer W and supports the wafer W.

[0126] The support member 500 includes a main body portion 510, a gasket 520, and an elastic snap ring 530 as components.

[0127] The main body portion 510 has a flange 511 at the lower end portion. The main body portion 510 is inserted into the concave portion 600 of the heat plate 320 and used. The main body portion 510 is supported on the bottom surface of the concave portion 600 in a state of being inserted into the concave portion 600, and the upper end thereof protrudes from the upper surface of the plate-shaped portion 321. The upper end of the main body portion 510 abuts against the back surface of the wafer W. The thickness of the flange 511 is substantially equal to the height of the stepped portion 601.

[0128] The gasket 520 is provided so as to cover the upper surface of the flange 511 and the upper surface of the stepped portion 601 in the concave portion 600.

[0129] The elastic snap ring 530 fixes the support member 500 to the concave portion 600 with the gasket 520 interposed therebetween.

[0130] ​The exposed portion of the support member 500 including the above-described components is formed of a material other than stainless steel. Specifically, a portion of the support member 500 is formed of nickel. A portion of the support member 500 can also be formed of a nickel alloy having higher heat resistance than stainless steel.

[0131] More specifically, for example, the main body portion 510 of the support member 500 is formed of alumina, the gasket 520 is formed of nickel, and the elastic snap ring 530 is formed of a nickel alloy having higher heat resistance than stainless steel (specifically, Inconel or Hastelloy). The gasket 520 can also be formed of the above-described nickel alloy.

[0132] <Main effects of the present embodiment>

[0133] As described above, in the present embodiment, the high-temperature heat treatment apparatus 41 is provided with a hot plate 320 that supports a wafer W and heats the wafer W at a high temperature of 500°C or higher, a chamber 340 that includes an upper chamber 342 that forms a processing space S3 over the hot plate 320 by covering the hot plate 320, a surface of the upper chamber 342 on the side of the processing space S3 being composed of a metal-containing material, and an exhaust portion that exhausts the processing space S3. Further, the chamber 340 has a shower head 360 that supplies a low-humidity gas having a lower humidity than that of the atmosphere to the processing space S3. Thus, it is possible to suppress the reaction of the metal-containing material of the surface of the upper chamber 342 exposed to a high temperature with moisture. Specifically, it is possible to suppress the reaction of the chromium oxide (Cr203) film of the surface of the upper chamber 342 exposed to a high temperature with moisture. As a result, it is possible to suppress the generation of a gas containing the metal that constitutes the upper chamber 342. Specifically, it is possible to suppress the generation of a gas containing chromium in the chromium oxide film of the surface of the upper chamber 342. As a result, it is possible to suppress the adhesion of the above-described metal to the wafer W, and more specifically, the adhesion of chromium to the surface of the wafer W.

[0134] In addition, in the present embodiment, the low-humidity gas is supplied from the shower head 360 into the processing space S3 even in the above-described idle state. Thus, compared to a case where the low-humidity gas is not supplied into the processing space S3 in the idle state, it is possible to suppress the adhesion of the constituent metal (specifically, chromium) of the upper chamber 342 to the front surface of the wafer W when the heat treatment at a high temperature is performed using the high-temperature heat treatment apparatus 41 from an early stage after the idle state is released.

[0135] Also, in a case where the low-humidity gas is not supplied into the processing space S3 in the idle state, which is different from the present embodiment, the atmosphere containing the humidity in the processing space S3 stagnates around the gas ejection holes 361. If the atmosphere containing the stagnated humidity comes into contact with the upper chamber 342, a gas containing the metal constituting the upper chamber 342, specifically, chromium, can be generated. By supplying the low-humidity gas into the processing space S3 from the shower head 360 also in the idle state as in the present embodiment, the stagnation described above can be prevented.

[0136] Also, in the present embodiment, the low-humidity gas is supplied from the gas supply part 430 into the space in the processing container 300 that is outside the chamber 340 also in a state where the wafer W is not present in the processing container 300. In a case where the processing space S3 is under a negative pressure as compared to the space outside the chamber 340, the atmosphere of the above-described space outside flows into the processing space S3 via the gap g2. Therefore, as described above, in a case where the low-humidity gas is supplied from the gas supply part 430 into the above-described space outside even in a state where the wafer W is not present in the processing container 300, the moisture concentration of the atmosphere in the processing space S3 can be reduced immediately after the wafer W is carried into the processing space S3 as compared to a case where the low-humidity gas is not supplied from the gas supply part 430 into the above-described space outside. Thus, the generation of a gas containing the metal constituting the upper chamber 342 can be suppressed.

[0137] Also, in the present embodiment, the low-humidity gas is supplied from the gas supply part 430 into the space in the processing container 300 of the high-temperature heat treatment apparatus 41 that is outside the above-described chamber 340 from a point in time when the processing of the wafer W is reserved for the high-temperature heat treatment apparatus 41. Specifically, in the present embodiment, in a case where the high-temperature heat treatment apparatus 41 becomes the above-described idle state, the supply of the low-humidity gas from the gas supply part 430 into the space outside the above-described chamber 340 is continued from a point in time when the processing of the wafer W is reserved for the high-temperature heat treatment apparatus 41 and the idle state is released. That is, the low-humidity gas is supplied from the gas supply part 430 into the space outside the above-described chamber 340 also during a period after the idle state is released and before the wafer W is carried to the high-temperature heat treatment apparatus 41. Therefore, when the wafer W is carried into the high-temperature heat treatment apparatus 41 to be subjected to heat treatment after the processing of the wafer W is reserved and the idle state is released, the moisture concentration of the atmosphere in the processing space S3 is further lowered. Thus, when the wafer W is subjected to heat treatment at a high temperature using the high-temperature heat treatment apparatus 41 from an early stage after the idle state is released, the metal constituting the upper chamber 342 can be further suppressed from adhering to the surface of the wafer W.

[0138] Further, in the present embodiment, the low-humidity gas is supplied from the gas supply portion 430 to the space in the processing container 300 which is outside the chamber 340 when the wafer W is carried into the processing container 300. Therefore, the leakage of the low-humidity gas from the processing container 300 to the wafer carrying region D when the wafer W is carried into the processing container 300 can be suppressed. This is particularly useful in the case where the low-humidity gas is nitrogen.

[0139] Further, in the present embodiment, the exposed portion of the support member 500 is formed of a material other than stainless steel. Specifically, a portion of the support member 500 is formed of a nickel alloy having higher heat resistance than nickel or stainless steel. Thereby, the attachment of the constituent metal of the upper chamber 342, specifically chromium, to the back surface of the wafer W can be suppressed.

[0140] According to the repeated experiments by the inventors of the present application, in the case where the gasket 520 and the elastic snap ring 530 are formed of SUS304, the detected amount of chromium on the back surface of the wafer W was about 2.4 x 10 10 atoms / cm 2 . In contrast, in the case where the gasket 520 is formed of nickel and the elastic snap ring 530 is formed of Inconel, the detected amount of chromium on the back surface of the wafer W was about 0.2 x 10 10 atoms / cm 2 .

[0141] <Modification Example>

[0142] In the above example, in the case where the low-humidity gas is supplied from the gas supply portion 430, the low-humidity gas is supplied from both the shower head 431 and the shower head 432, but can be supplied from only either one.

[0143] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The embodiments described above can be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims and the subject matter thereof. For example, the constituent elements of the above-described embodiments can be arbitrarily combined. According to the arbitrary combination, the effects of the respective constituent elements involved in the combination are of course obtained, and other effects that are apparent to those skilled in the art from the description of this specification can be obtained.

[0144] Furthermore, the effects described in this specification are merely illustrative or exemplary and are not restrictive. That is, the technology according to the present disclosure can exhibit effects in addition to or instead of the above-described effects on the basis of this specification.

[0145] Further, the following structural examples also belong to the technical scope of the present disclosure. Further, the following structural examples also belong to the technical scope of the present disclosure.

[0146] (1) A heat treatment apparatus comprising:

[0147] a heating section that supports a substrate and heats the substrate at a high temperature of 500°C or higher;

[0148] a chamber that includes a lid section that forms a processing space over the heating section by covering the heating section, a surface of the lid section on a side of the processing space being composed of a metal-containing material; and

[0149] an exhaust section that exhausts the processing space,

[0150] wherein the chamber has a gas supply section that supplies a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.

[0151] (2) The heat treatment apparatus according to the (1), wherein

[0152] the metal-containing material is stainless steel.

[0153] (3) The heat treatment apparatus according to the (1) or (2), wherein

[0154] a control section,

[0155] the heat treatment apparatus performs a process (A) in which the low-humidity gas is supplied from the gas supply section into the processing space in a state where the heating section is warmed up and no processing of a substrate is scheduled for the heat treatment apparatus, by control of the control section.

[0156] (4) The heat treatment apparatus according to the (3), wherein

[0157] a housing that accommodates the heating section and the chamber; and

[0158] another gas supply section that supplies the low-humidity gas to a space inside the housing on an outer side of the chamber,

[0159] the heat treatment apparatus performs a process (B) in which the low-humidity gas is supplied from the another gas supply section to the space inside the housing on the outer side of the chamber, by control of the control section,

[0160] the process (B) is performed also in a state where no substrate is present inside the housing.

[0161] (5) The heat treatment apparatus according to the (4), wherein

[0162] The process (B) is performed from a time point at which the heat treatment apparatus is reserved for processing of the substrate until the processing of the reserved substrate is completed.

[0163] (6) The heat treatment apparatus according to (5), wherein

[0164] The process (B) is stopped when the substrate is carried into the housing.

[0165] (7) The heat treatment apparatus according to any one of (4) to (6), wherein

[0166] The cooling section is provided in a cooling region adjacent to a heating region in which the heating section is provided in the housing, supports the substrate, and cools the substrate,

[0167] The other gas supply section has a heating region gas supply section that supplies the low-humidity gas to the heating region and a cooling region gas supply section that supplies the low-humidity gas to the cooling region,

[0168] In the process (B), the low-humidity gas is supplied from at least either the heating region gas supply section or the cooling region gas supply section.

[0169] (8) The heat treatment apparatus according to any one of (1) to (7), wherein

[0170] The heating section has a support member that abuts against a back surface of the substrate and supports the substrate,

[0171] An exposed portion of the support member is formed of a material other than stainless steel.

[0172] (9) The heat treatment apparatus according to (8), wherein

[0173] A portion of the support member is formed of a nickel alloy having higher heat resistance than nickel or stainless steel.

[0174] (10) A heat treatment method is a heat treatment method of a substrate using a heat treatment apparatus, wherein

[0175] The heat treatment apparatus has:

[0176] a heating section that supports the substrate and heats the substrate at a high temperature;

[0177] a chamber that includes a lid section that forms a processing space on the heating section by covering the heating section, a surface of the lid section on the processing space side being composed of a metal-containing material; and

[0178] an exhaust section that exhausts the processing space,

[0179] The heat treatment method includes:

[0180] (a) heating a substrate at a high temperature of 500°C or higher by the heating section; and

[0181] (b) supplying a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.

[0182] (11) The heat treatment method according to (10), wherein

[0183] The metal-containing material is stainless steel.

[0184] (12) The heat treatment method according to (10) or (11), wherein

[0185] The process (b) is performed in a state where the heating section is warmed up and no processing of a substrate is scheduled for the heat treatment apparatus.

[0186] (13) The heat treatment method according to (12), wherein

[0187] The heat treatment apparatus further includes a housing that accommodates the heating section and the chamber,

[0188] The heat treatment method further includes a process (c) in which the low-humidity gas is supplied to a space inside the housing that is outside the chamber,

[0189] The process (c) is performed in a state where no substrate is present inside the housing.

[0190] (14) The heat treatment method according to (13), wherein

[0191] The process (c) is performed from a point in time at which processing of a substrate is scheduled for the heat treatment apparatus until the scheduled processing of the substrate is completed.

[0192] (15) The heat treatment method according to (14), wherein

[0193] The process (c) is stopped when a substrate is carried into the housing.

[0194] (16) The heat treatment method according to any one of (13) to (15), wherein

[0195] The heat treatment apparatus further includes:

[0196] a cooling section that is provided in a cooling region inside the housing that is adjacent to a heating region in which the heating section is provided, supports a substrate, and cools the substrate.

[0197] a heating region gas supply portion that supplies the low-humidity gas to the heating region; and

[0198] a cooling region gas supply portion that supplies the low-humidity gas to the cooling region,

[0199] In the process (c), the low-humidity gas is supplied from at least either one of the heating region gas supply portion and the cooling region gas supply portion.

[0200] Explanation of Reference Numerals

[0201] 41: high-temperature heat treatment apparatus; 320: hot plate; 340: chamber; 342: upper chamber; 350: peripheral exhaust portion; 370: central exhaust portion; 380: outer peripheral exhaust portion; 381: exhaust port; S3: processing space; W: wafer.

Claims

1. A heat treatment apparatus, comprising: The heating element has a supporting substrate that is heated at a high temperature of 500°C or higher. A chamber including a cover that forms a processing space on the heating element by covering the heating element, the surface of the cover facing the processing space being made of a metallic material; and An exhaust unit that vents air from the processing space. in, The chamber has a gas supply unit that supplies the processing space with a low-humidity gas whose humidity is lower than that of the atmosphere.

2. The heat treatment apparatus according to claim 1, wherein, The metallic material is stainless steel.

3. The heat treatment apparatus according to claim 1 or 2, wherein, It also has a control unit. Under the control of the control unit, the heat treatment apparatus performs step (A), in which, in the state where the heating unit is heated and the heat treatment apparatus is not scheduled to process the substrate, the low humidity gas is supplied from the gas supply unit into the processing space.

4. The heat treatment apparatus according to claim 3, wherein, It also has: A housing that houses the heating element and the chamber; and Other gas supply units supply the low-humidity gas to the space outside the chamber within the housing. Under the control of the control unit, the heat treatment apparatus performs step (B), in which the low-humidity gas is supplied from the other gas supply unit to the space outside the chamber within the housing. The process (B) is performed even when there is no substrate inside the housing.

5. The heat treatment apparatus according to claim 4, wherein, The process (B) is performed from the time when the heat treatment apparatus schedules the processing of the substrate until the scheduled processing of the substrate is completed.

6. The heat treatment apparatus according to claim 5, wherein, When the substrate is being moved into the housing, process (B) is stopped.

7. The heat treatment apparatus according to claim 4, wherein, It also includes a cooling section, which is disposed within the housing in a cooling region adjacent to the heating region where the heating section is disposed, and supports the substrate and cools the substrate. The other gas supply units include a heating zone gas supply unit that supplies the low-humidity gas to the heating zone and a cooling zone gas supply unit that supplies the low-humidity gas to the cooling zone. In step (B), the low-humidity gas is supplied from at least one of the heating zone gas supply unit and the cooling zone gas supply unit.

8. The heat treatment apparatus according to claim 1 or 2, wherein, The heating element has a support member that abuts against the back of the substrate and supports the substrate. The exposed portion of the support component is made of a material other than stainless steel.

9. The heat treatment apparatus according to claim 8, wherein, A portion of the support component is formed of a nickel alloy with higher heat resistance than nickel or stainless steel.

10. A heat treatment method, which is a heat treatment method for a substrate using a heat treatment apparatus, wherein, The heat treatment apparatus includes: The heating element has a supporting substrate that is heated at a high temperature. A chamber including a cover that forms a processing space on the heating unit by covering the heating unit, the surface of the cover facing the processing space being made of a metallic material; as well as An exhaust unit that vents air from the processing space. The heat treatment method includes: In step (a), the substrate is heated to a high temperature of 500°C or higher by the heating unit; as well as Step (b) involves supplying the processing space with a low-humidity gas whose humidity is lower than that of the atmosphere.

11. The heat treatment method according to claim 10, wherein, The metallic material is stainless steel.

12. The heat treatment method according to claim 10 or 11, wherein, The process (b) is performed even when the heating section is heated and the substrate scheduled for processing by the heat treatment apparatus is not being processed.

13. The heat treatment method according to claim 12, wherein, The heat treatment apparatus further comprises a housing that accommodates the heating element and the chamber. The heat treatment method further includes step (c), in which the low-humidity gas is supplied to the space outside the chamber within the housing. The process (c) is performed even when there is no substrate inside the housing.

14. The heat treatment method according to claim 13, wherein, The process (c) is performed from the time when the heat treatment apparatus schedules the processing of the substrate until the scheduled processing of the substrate is completed.

15. The heat treatment method according to claim 14, wherein, When the substrate is being moved into the housing, process (c) is stopped.

16. The heat treatment method according to claim 13, wherein, The heat treatment apparatus also includes: A cooling section is provided in the housing, adjacent to the heating area where the heating section is provided, to support the substrate and cool the substrate; A heating zone gas supply unit that supplies the low-humidity gas to the heating zone; and The cooling zone gas supply unit supplies the low-humidity gas to the cooling zone. In step (c), the low-humidity gas is supplied from at least one of the heating zone gas supply unit and the cooling zone gas supply unit.

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