Plasma processing apparatus and internal member of plasma processing apparatus

Abstract

A plasma processing apparatus is characterized by including a plasma processing apparatus internal member including a gas supply path and a forming portion capable of forming the gas supply path, when the representative length of the gas supply path in a cross section perpendicular to the longitudinal direction of the gas supply path is d1 and the longest part length is d2, the representative length d1 is 0.5 mm or less, and the ratio d2 / d1 of the longest part length d2 to the representative length d1 is 2 or more. The other end portion of the gas supply path is not visible from one end portion of the gas supply path in plan view, and the thickness of the formed portion is 2 mm or more.

Description

TECHNICAL FIELD

[0001] The present application relates to a plasma processing apparatus and a plasma processing apparatus internal member. BACKGROUND

[0002] Patent Document 1 discloses a structure in which a gas flow path provided with a bent portion is provided in an upper electrode of a plasma processing apparatus. In addition, Patent Document 2 discloses a structure in which a through-hole for gas flow provided in a manner branched via a recess is provided in an upper electrode. In addition, Patent Document 3 discloses a structure in which a gas supply pipe provided with a buried member is provided in a lower electrode of a plasma processing apparatus.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENT

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-96342

[0006] Patent Document 2: Japanese Patent Application Publication No. 2023-2168

[0007] Patent Document 3: Japanese Patent Application Publication No. 2019-149422 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] The technology of the present application can suppress the occurrence of abnormal discharge in a plasma processing apparatus.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] One embodiment of the present application is a plasma processing apparatus characterized by including a plasma processing apparatus internal member including a gas supply path and a formation portion capable of forming the gas supply path, wherein, when a representative length of the gas supply path in a cross section perpendicular to a length direction of the gas supply path is d1 and a longest portion length is d2, the representative length d1 is 0.5 mm or less, the ratio d2 / d1 of the longest portion length d2 to the representative length d1 is 2 or more, another end portion of the gas supply path is not visible from one end portion of the gas supply path in plan view, and the thickness of the formation portion is 2 mm or more.

[0012] EFFECTS OF THE INVENTION

[0013] With the present application, the occurrence of abnormal discharge in a plasma processing apparatus can be suppressed. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1is a diagram showing a configuration example of a plasma processing system of one embodiment.

[0015] Figure 2 is a cross-sectional view of a configuration example of a plasma processing apparatus of one embodiment.

[0016] Figure 3 is a partial cross-sectional view of a configuration example of a gas supply path of the first embodiment.

[0017] Figure 4 is a partial cross-sectional view of a configuration example of a gas supply path of the first embodiment.

[0018] Figure 5 is a partial plan view of a configuration example of a gas supply path of the first embodiment.

[0019] Figure 6 is a partial plan view of a configuration example of a gas supply path of the first embodiment.

[0020] Figure 7 is a partial plan view of a configuration example of a gas supply path of the first embodiment.

[0021] Figure 8 is a diagram showing a configuration example of a gas supply path of the first embodiment.

[0022] Figure 9 is a diagram showing an operation example of a gas supply path of the first embodiment.

[0023] Figure 10 is a partial cross-sectional view of a modification example of a gas supply path of the first embodiment.

[0024] Figure 11 is a partial cross-sectional view of a modification example of a gas supply path of the first embodiment.

[0025] Figure 12 is a partial cross-sectional view of a modification example of a gas supply path of the first embodiment.

[0026] Figure 13 is a partial plan view of a modification example of a gas supply path of the first embodiment.

[0027] Figure 14 is a partial cross-sectional view of a modification example of a gas supply path of the first embodiment.

[0028] Figure 15 is a partial plan view of a modification example of a gas supply path of the first embodiment.

[0029] Figure 16is a partial sectional view showing one modification of the gas supply path of the first embodiment.

[0030] Figure 17 is a partial plan view showing one modification of the gas supply path of the first embodiment.

[0031] Figure 18 is a partial sectional view showing one modification of the gas supply path of the first embodiment.

[0032] Figure 19 is a partial sectional view showing a structure example of the gas supply path of the second embodiment.

[0033] Figure 20 is an explanatory view showing a function example of the gas supply path of the second embodiment.

[0034] Figure 21 is a partial sectional view showing one modification of the gas supply path of the second embodiment.

[0035] Figure 22 is a partial sectional view showing one modification of the gas supply path of the second embodiment.

[0036] Figure 23 is a partial sectional view showing one modification of the gas supply path of the second embodiment. DETAILED DESCRIPTION

[0037] In a manufacturing process of a semiconductor device, a processing module in which a semiconductor wafer (hereinafter referred to as "substrate") is housed is brought to a reduced pressure state, and various processing steps including plasma processing are performed on the substrate. The plasma processing is performed, for example, using a plasma processing apparatus in which a plurality of processing modules are arranged around a common transfer module.

[0038] In a plasma processing chamber included in the processing module, various components for plasma generation or substrate support, etc. are provided. It is known that a gas supply path formed in these components includes a portion in which abnormal discharge can occur.

[0039] In Patent Literature 1 and Patent Literature 2, in an upper electrode which is a component in which abnormal discharge can occur, by forming a gas supply path for supplying a processing gas into a labyrinth structure including a bend and a branch, etc., it is achieved to suppress entry of cations from a plasma processing space, thereby suppressing occurrence of abnormal discharge. Further, in Patent Literature 3, in an electrostatic chuck which is a component in which abnormal discharge can occur, by providing a buried component in a heat transfer gas supply path for supplying a heat transfer gas, it is achieved to shorten a straight travel distance of electrons.

[0040] As a method of forming a gas supply path as disclosed in each of the above documents, a method of forming by performing machining such as MC machining (Machining Center machining), water jet machining, electric discharge machining, or the like on a silicon member has been known. The MC machining or the water jet machining cannot perform a hole machining of a high aspect ratio of a certain degree or more, and is likely to become a tapered shape. In addition, the machining time of the electric discharge machining is very long, and only a raw material of extremely low resistance such as silicon can be machined. Therefore, in the above machining method, a complicated structure such as the labyrinth structure disclosed in the above document or a structure including other members such as a buried member is required. In addition, the water jet machining is only to spray high-pressure water to an object, and is different from the water laser machining described later.

[0041] Therefore, the technology of the present application can suppress occurrence of abnormal discharge in a member of a plasma processing apparatus. Specifically, a gas supply path formed of a member capable of suppressing occurrence of abnormal discharge in the member of the plasma processing apparatus is provided.

[0042] Hereinafter, the structure of a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In addition, in the present specification, elements having substantially the same function and structure are denoted by the same reference numerals, and repeated description is omitted.

[0043] <Plasma processing system>

[0044] Figure 1 is a drawing for describing a structure example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control section 2. The plasma processing system is one example of a substrate processing system, and the plasma processing apparatus 1 is one example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support section 11, and a plasma generating section 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support section 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0045] The plasma generation portion 12 is capable of generating plasma from at least one kind of processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space can be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. In addition, various types of plasma generation portions including an AC (Alternating Current) plasma generation portion and a DC (Direct Current) plasma generation portion can be used. In one embodiment, an AC signal (AC electric power) used in the AC plasma generation portion has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0046] The control section 2 can process a computer executable command for causing the plasma processing apparatus 1 to execute various steps described in the present application. The control section 2 can control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control section 2 can be included in the plasma processing apparatus 1. The control section 2 can include a processing section 2al, a storage section 2a2, and a communication interface 2a3. The control section 2 is implemented by, for example, a computer 2a. The processing section 2al can read a program from the storage section 2a2, and execute various control actions by executing the read program. The program can be pre-stored in the storage section 2a2, or can be acquired via a medium as needed. The acquired program is stored in the storage section 2a2, and read and executed by the processing section 2al from the storage section 2a2. The medium can be various storage media readable by the computer 2a, or can be a communication line connected to the communication interface 2a3. The processing section 2al can be a CPU (Central Processing Unit). The storage section 2a2 can include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0047] <Plasma Processing Apparatus>

[0048] Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as one example of the plasma processing apparatus 1 will be described. Figure 2 is a view for describing a configuration example of a capacitively coupled plasma processing apparatus.

[0049] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power source 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction section is capable of introducing at least one processing gas into the plasma processing chamber 10. The gas introduction section includes a showerhead 13. The substrate support section 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support section 11. In one embodiment, the showerhead 13 constitutes at least a portion of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support section 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support section 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0050] The substrate support section 11 includes a main body section 111 and a ring assembly 112. The main body section 111 has a central region 111a for supporting a substrate W and a ring-shaped region 111b for supporting the ring assembly 112. A wafer is one example of the substrate W. The ring-shaped region 111b of the main body section 111 encloses the central region 111a of the main body section 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body section 111, and the ring assembly 112 is disposed on the ring-shaped region 111b of the main body section 111 in a manner to enclose the substrate W on the central region 111a of the main body section 111. Thus, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the ring-shaped region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0051] In one embodiment, the main body 111 includes a susceptor 120 and an electrostatic chuck 121. The susceptor 120 includes an electrically conductive member. The electrically conductive member of the susceptor 120 can function as a lower electrode. The electrostatic chuck 121 is disposed on the susceptor 120. The electrostatic chuck 121 includes a ceramic member 121a and an electrostatic electrode 121b disposed in the ceramic member 121a. The ceramic member 121a has a central region 111a. In one embodiment, the ceramic member 121a also has a ring-shaped region 111b. Further, other members surrounding the electrostatic chuck 121, such as a ring-shaped electrostatic chuck or a ring-shaped insulating member, can also have the ring-shaped region 111b. In this case, the ring assembly 112 can be disposed on the ring-shaped electrostatic chuck or the ring-shaped insulating member, or on both the electrostatic chuck 121 and the ring-shaped insulating member. In addition, at least one RF / DC electrode, which is coupled to the RF power source 31 and / or the DC power source 32 described later, can be disposed in the ceramic member 121a. In this case, the at least one RF / DC electrode can function as a lower electrode. The RF / DC electrode is also referred to as a bias electrode in the case where the bias RF signal and / or the DC signal described later is supplied to the at least one RF / DC electrode. Further, the electrically conductive member of the susceptor 120 and the at least one RF / DC electrode can function as a plurality of lower electrodes. Further, the electrostatic electrode 121b can function as a lower electrode. Thus, the wafer support portion 11 includes at least one lower electrode.

[0052] The ring assembly 112 includes one or more ring-shaped members. In one embodiment, the one or more ring-shaped members include one or more edge rings and at least one cover ring. The edge ring is formed of an electrically conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0053] In addition, the wafer support portion 11 includes a heat transfer gas supply portion 130 for supplying a heat transfer gas to a gap between the back surface of the wafer W and the central region 111a, or a gap between the back surface of the ring assembly 112 and the ring-shaped region 111b. The heat transfer gas supply portion 130 includes at least one heat transfer gas source 131 and a heat transfer gas inlet 132. Details of the heat transfer gas supply portion 130 will be described later.

[0054] In addition, the wafer support portion 11 can include a temperature adjustment module for adjusting at least one of the electrostatic chuck 121, the ring assembly 112, and the wafer W to a target temperature. The temperature adjustment module can include a heater, a heat transfer medium, a flow path 120a, or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path 120a. In one embodiment, the flow path 120a is formed in the susceptor 120, and one or more heaters are disposed in the ceramic member 121a of the electrostatic chuck 121.

[0055] The showerhead 13 is capable of introducing at least one process gas from the gas supply section 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 14, at least one gas diffusion chamber 15, and a plurality of gas introduction ports 16. The process gas supplied to the gas supply port 14 is capable of being introduced into the plasma processing space 10s from the plurality of gas introduction ports 16 through the gas diffusion chamber 15. In addition, the showerhead 13 includes at least one upper electrode 17. In addition, the showerhead 13 includes a cooling plate 18 provided at an upper portion of the upper electrode 17. Further, the gas introduction section can include one or more side gas injectors (SGI) in addition to the showerhead 13, the one or more side gas injectors being installed at one or more opening sections formed in the sidewall 10a. Details of the structure of the gas introduction ports 16, the upper electrode 17, and the cooling plate 18 will be described later.

[0056] The gas supply section 20 can include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply section 20 is capable of supplying at least one process gas from each corresponding gas source 21 to the showerhead 13 via each corresponding flow controller 22. Each flow controller 22 can include, for example, a mass flow controller or a pressure-controlled flow controller. Also, the gas supply section 20 can include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0057] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is capable of supplying at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thereby, a plasma can be formed from at least one process gas supplied to the plasma processing space 10s. Accordingly, the RF power source 31 can function as at least a portion of the plasma generation section 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated at the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0058] In one embodiment, the RF power source 31 includes a first RF generating section 31a and a second RF generating section 31b. The first RF generating section 31a is coupled to the at least one lower electrode and / or the at least one upper electrode via at least one impedance matching circuit, and is capable of generating a source RF signal (source RF electrical power) for plasma generation. In one embodiment, the source RF signal has a frequency in a range from 10 MHz to 150 MHz. In one embodiment, the first RF generating section 31a can be capable of generating a plurality of source RF signals having different frequencies. The generated source RF signal(s) are supplied to the at least one lower electrode and / or the at least one upper electrode.

[0059] The second RF generating section 31b is coupled to the at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electrical power). The bias RF signal can have the same frequency as the source RF signal, or can have a different frequency from the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in a range from 100 kHz to 60 MHz. In one embodiment, the second RF generating section 31b can be capable of generating a plurality of bias RF signals having different frequencies. The generated bias RF signal(s) are supplied to the at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal can be pulsed.

[0060] In addition, the power source 30 can include a DC power source 32 coupled to the plasma processing chamber 10. The DC power source 32 includes a first DC generating section 32a and a second DC generating section 32b. In one embodiment, the first DC generating section 32a is connected to the at least one lower electrode, and is capable of generating a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generating section 32b is connected to the at least one upper electrode, and is capable of generating a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0061] In various embodiments, the first DC signal and the second DC signal can be pulsed. In this case, a sequence of voltage pulses is applied to the at least one lower electrode and / or the at least one upper electrode. The voltage pulses can have a pulse waveform of a shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating section for generating a sequence of voltage pulses from a DC signal is connected between the first DC generating section 32a and the at least one lower electrode. Thus, the first DC generating section 32a and the waveform generating section constitute a voltage pulse generating section. In the case where the second DC generating section 32b and the waveform generating section constitute a voltage pulse generating section, the voltage pulse generating section is connected to the at least one upper electrode. The voltage pulses can have a positive polarity, or can have a negative polarity. In addition, the sequence of voltage pulses can contain one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, it can be that the first DC generating section 32a and the second DC generating section 32b are provided in addition to the RF power source 31, or it can be that the first DC generating section 32a is provided instead of the second RF generating section 31b.

[0062] The exhaust system 40 can be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s can be adjusted using the pressure regulating valve. The vacuum pump can include a turbo molecular pump, a dry pump, or a combination thereof. A baffle 140 is provided between the plasma processing space 10s and the gas exhaust port 10e. The baffle 140 includes a plurality of through-holes 141 for communicating the plasma processing space 10s with the gas exhaust port 10e.

[0063] Further, in the above-described and Figure 2 The structure shown in the drawing includes all of the internal members of the plasma processing apparatus of each of the first to third embodiments described below, but is not limited to such an example, and can include only any one of these.

[0064] (First Embodiment)

[0065] <Upper Electrode>

[0066] Hereinafter, the structure of the gas supply path in the upper electrode of the first embodiment of the present application and modifications thereof will be described using Figures 3-17 The structure of the gas supply path in the upper electrode of the first embodiment of the present application and modifications thereof will be described using

[0067] Figure 3 and Figure 4 is a partial cross-sectional view showing a structure example of the first gas supply path 150 of the first embodiment. Further,Figure 3 is a cross section of the first gas supply path parallel to the oblique direction and the length direction L. Figure 4 is a cross section of the gas supply path perpendicular to the length direction L Figure 3 indicated by A-A cross section). In Figure 3 In the example indicated by A-A cross section), the oblique direction of the first gas supply path 150 is the positive direction of the X axis.

[0068] In Figure 3 , the gas introduction port 16 includes: the first gas supply path 150 formed in the upper electrode 17; and the second gas supply path 151 formed in the cooling plate 18. The first gas supply path 150 and the second gas supply path 151 are provided in communication on a connecting surface of the upper electrode 17 and the cooling plate 18.

[0069] The first gas supply path 150 includes a first end portion 150a on the cooling plate 18 side and a second end portion 150b on the plasma processing space 10s side. The first gas supply path 150 is connected at the first end portion 150a to the second gas supply path 151. In addition, the gas supplied to the gas introduction port 16 is introduced to the plasma processing space 10s via the second end portion 150b. A direction linking the centers of the first end portion 150a and the second end portion 150b is referred to as a length direction L of the first gas supply path 150. In addition, the first gas supply path 150 is formed in a formation portion 160 in the upper electrode 17.

[0070] The formation portion 160 includes a wall surface 150c constituting the first gas supply path 150. In addition, the formation portion 160 has a thickness t in the Z direction in Figure 3 The thickness t of the formation portion 160 is 2 mm or more. In addition, the thickness t of the formation portion 160 is preferably 10 mm or more.

[0071] In Figure 4 , a cross section of the first gas supply path 150 perpendicular to the length direction L Figure 3 indicated by A-A cross section) is a substantially rounded rectangular shape. In one embodiment, the rounded rectangular shape is a shape obtained by connecting a pair of edges of a rectangular shape with semicircles. The first gas supply path 150 has dimensions including a representative length d1 and a longest portion length d2 in the cross section perpendicular to the length direction L.

[0072] The representative length d1 is a length of a portion closest to the wall surface 150c in the cross section perpendicular to the length direction L. The representative length d1 is 0.5 mm or less. In addition, the representative length d1 is preferably 0.1 mm or less. On the other hand, the lower limit of the value of the representative length d1 is not particularly limited, and can be 0.05 mm or more as a lower limit of a value that can be formed in the formation method of the gas supply path described later.

[0073] The longest portion length d2 is the length of the portion of the wall surface 150c that is farthest away in a cross section perpendicular to the length direction L. The lower limit of the value of the longest portion length d2 is defined by the ratio (d2 / d1) to the representative length d1, which is 2 or more. In addition, the ratio (d2 / d1) is preferably 5 or more.

[0074] Returning to Figure 3 , the first gas supply path 150 is disposed obliquely with respect to the direction having the desired inclination angle θ with respect to the Z axis. In other words, the inclination angle θ that the length direction L of the first gas supply path 150 makes with the Z axis is not 0 (zero). In addition, θ is in radians, and satisfies 0 < θ < (π / 2).

[0075] Using Figures 3-7 The first gas supply path 150 is disposed obliquely, and the significance thereof will be described. Figure 5 is a partial plan view of the first embodiment of the gas supply path 150 as viewed from the second end portion 150b side toward the positive direction of the Z axis in Figure 3 In addition, in Figure 6 and Figure 7 are partial plan views in modified examples in which the oblique direction is different. Furthermore, hereinafter, the plan as viewed from the second end portion 150b side toward the positive direction of the Z axis in Figure 3 will be simply referred to as "plan".

[0076] In Figure 5 , the second end portion 150b has a dimension including an oblique direction maximum length d3. The oblique direction maximum length d3 is the length of the portion of the wall surface 150c that is farthest away in straight-line distance in the direction parallel to the oblique direction. In other words, the oblique direction maximum length d3 is the length of the longest line segment among arbitrary line segments of the wall surface 150c that are parallel to the oblique direction.

[0077] Figure 5 The example illustrated in is a case in which the oblique direction is the positive direction of the X axis. At this time, the oblique direction maximum length d3 is equal to the length of the short diameter direction of the first gas supply path 150 in plan.

[0078] Figure 6 The example illustrated in is a case in which the oblique direction is the positive direction of the Y axis. At this time, the oblique direction maximum length d3 is equal to the length of the long diameter direction of the first gas supply path 150 in plan.

[0079] Figure 7 The example illustrated in is a case in which the oblique direction is oblique with respect to each of the X axis and the Y axis.

[0080] Figures 5-7In a plan view, the first end portion 150a is not visible from the second end portion 150b. In one embodiment, only the wall surface 150c constituting the second end portion 150b is visible from the opening of the second end portion 150b in a plan view. Such a structure is established by the inclination of the first gas supply path 150 in the present embodiment.

[0081] The structure in which the first end portion 150a is not visible from the second end portion 150b in a plan view is more specifically established by the thickness t, the inclination angle θ, and the maximum length d3 of the inclination direction of the formation portion 160 satisfying the following relation of Expression (1).

[0082] tan θ ≥ d3 / t...(1)

[0083] Using Figure 3 The meaning of the above Expression (1) will be described. Furthermore, Figure 3 is an example in which the inclination direction is the positive direction of the X axis, but the same applies in the case where the inclination direction is another direction (for example, Figure 6 , Figure 7 the direction shown in FIG. 6).

[0084] In a cross-sectional view of the first gas supply path 150, the first end portion 150a is offset by a length d4 in the X direction by the inclination of the first gas supply path 150. The offset distance d4 satisfies the following Expression (2). Figure 3

[0085] d4 = t x tan θ...(2)

[0086] When the offset distance d4 is equal to or greater than the maximum length d3 of the inclination direction (d4 ≥ d3), the structure in which the first end portion 150a is not visible from the second end portion 150b is established. From this fact and Expression (2), the above Expression (1) can be derived.

[0087] Here, in the case where the inclination direction is the positive direction of the X axis as shown in Figure 3 , Figure 5 , the following Expression (3) is established according to the graphical relationship as shown in Figure 8 .

[0088] d3 = dl / cos θ...(3)

[0089] When the above Expression (3) is substituted into Expression (1) and is transformed, the following Expression (4) is obtained.

[0090] sin θ ≥ dl / t...(4)

[0091] Similarly, in the case where the inclination direction is the positive direction of the Y axis as shown in Figure 6 , the following Expression (5) is established.

[0092] sin θ ≥ d2 / t...(5)​

[0093] Next, an example of an effect of the first gas supply path 150 of the first embodiment configured as described above will be described. Figure 9 An example of an effect of the first gas supply path 150 of the first embodiment configured as described above will be described. Figure 9 is a diagram showing an example of an effect of the gas supply path of the first embodiment.

[0094] First, by making the representative length dl be 0.5 mm or less, the proportion of cations (indicated by "+") that enter the first gas supply path 150 from the plasma processing space 10s side can be reduced. In addition, the cations that enter the first gas supply path 150 are likely to come into contact with the wall surface 150c and are unlikely to reach the boundary region BR of the upper electrode 17 and the cooling plate 18. Thus, the occurrence of abnormal discharge caused by cations that enter the boundary region BR can be suppressed. Figure 9

[0095] In addition, by making the ratio of the longest portion length d2 to the representative length dl (d2 / dl) be 2 or more, the gas molecular density of the gas introduction region IR around the second end portion 150b in the plasma processing space 10s can be reduced. By reducing the gas molecular density of the gas introduction region IR, the ionization of the gas in the gas introduction region IR can be suppressed, and the amount of cations present can be reduced. Thus, the number of cations that enter the first gas supply path 150 can be reduced, and the occurrence of abnormal discharge described above can be further suppressed.

[0096] Furthermore, by being configured so that the first end portion 150a is not visible from the second end portion 150b in plan view, cations accelerated in a direction perpendicular to the plasma sheath SH do not come into contact with the wall surface 150c by reaching the boundary region BR even if they enter the first gas supply path 150. Thus, the occurrence of abnormal discharge described above can be further suppressed.

[0097] Next, the following effects can also be obtained. That is, by making the ratio of the longest portion length d2 to the representative length dl (d2 / dl) be 2 or more, the flow conductance of the first gas supply path 150 is increased compared to a case in which the ratio is less than 2. Thus, the occurrence of abnormal discharge described above can be suppressed without reducing the speed of gas introduction in the gas introduction portion.

[0098] Next, an example of an effect of the first gas supply path 150 of the first embodiment configured as described above will be described. Figures 10-17 A modification example of the first gas supply path 150 of the first embodiment will be described.

[0099] Figure 10 is a diagram showing a partial cross-sectional view of the first gas supply path 150 of one modification example. In the modification example shown in Figure 10 is a diagram showing a partial cross-sectional view of the first gas supply path 150 of one modification example. In the modification example shown in​Figure 3 The shape of the cross section (A-A cross section shown in FIG. 15) is an elliptical shape. In this modification, the representative length dl is the length of the portion closest to the wall surface 150c, and is the minor axis of the ellipse. In addition, the longest portion length d2 is the length of the portion farthest from the wall surface 150c, and is the major axis of the ellipse. In this modification, as in the case where the cross-sectional shape is a rounded rectangular shape, each dimension can be determined by the above equation (4) or equation (5).

[0100] Figure 11 is a partial cross-sectional view showing one modification of the first gas supply path of the first embodiment. In one modification, as shown in Figure 11 , the first gas supply path 150 includes a plurality of sub-supply paths 170a, 170b in one cross section parallel to the oblique direction and the length direction L. The sub-supply paths 170a, 170b can be communicated in the circumferential direction of the first gas supply path 150, or can be independent without being communicated.

[0101] Figure 12 is a partial cross-sectional view showing the first gas supply path 150 of one modification. In Figure 12 the modification shown in FIG. 17, a cross section (B-B cross section shown in FIG. 18) of the first gas supply path 150 perpendicular to the length direction L has a substantially C-shaped shape. In this modification, Figure 11 the sub-supply paths 170a, 170b shown in FIG. 18 are communicated in the circumferential direction of the first gas supply path 150. In this modification, the representative length dl is the length of the portion closest to the wall surface 150c, as shown in Figure 11 , and is the width direction length of the C-shaped shape. In addition, the longest portion length d2 is the length of the portion farthest from the wall surface 150c, as shown in Figure 12 , and is the length of the circumferential direction of the C-shaped shape. Figure 12

[0102] Figure 13 is a partial cross-sectional view of the first gas supply path 150 of the modification shown in Figure 11 from the Z-axis positive direction in Figure 11 and Figure 12 is a partial plan view of the first gas supply path 150 of the modification shown in FIG. 17. In Figure 13 , the second end portion 150b has a dimension including the oblique direction maximum length d3. Thereby, the first end portion 150a is not visible from the second end portion 150b when viewed in plan.

[0103] Further, in Figure 13 , the second end portion 150b overlaps the first end portion 150a when viewed in plan. However, when the oblique direction maximum length d3 satisfies the above equation (1), even when overlapping when viewed in plan, the other end portion is not visible from one end portion. In Figure 13 ​In this case, the overlapping portion thereof becomes a shadow of the wall surface 150c, and thus the first end portion 150a is not visible from the second end portion 150b. The same applies to the following other modification examples of the first embodiment.

[0104] Figure 14 is a partial sectional view of the first gas supply path 150 representing another modification example. In the modification example shown in Figure 14 , the group of shapes of the cross sections of the sub-supply paths 170a, 170b perpendicular to the length direction L (B-B sections shown in Figure 11 ) are relatively large C shapes. In this modification example, Figure 11 , the sub-supply paths 170a, 170b are not connected in the circumferential direction of the first gas supply path 150 and are independent of each other. In this modification example, the representative length dl is the length of the portion of the wall surface 150c closest to, as shown in Figure 14 , the width direction of the C shape. In addition, the longest portion length d2 is the length of the portion of the wall surface 150c farthest from, as shown in Figure 14 , the circumferential direction of the C shape.

[0105] Figure 15 is a partial sectional view of the first gas supply path 150 from the second end portion 150b side toward Figure 11 the positive direction of the Z axis in Figure 11 and Figure 14 is a partial plan view of the first gas supply path 150 of the modification example shown in Figure 13 . In , the second end portion 150b has a dimension including the maximum length d3 in the oblique direction. Thereby, the first end portion 150a is not visible from the second end portion 150b when viewed in plan.

[0106] Figure 16 is a partial sectional view of the first gas supply path 150 representing yet another modification example. In the modification example shown in Figure 16 , three sub-supply paths 170a, 170b, 170c are included, which are not connected in the circumferential direction of the first gas supply path 150 and are independent of each other. The shape of the cross section of each of the sub-supply paths 170a, 170b, 170c perpendicular to the length direction L (B-B sections shown in Figure 11 ) is a substantially involute shape, and the group of shapes of the cross sections is arranged at positions of 120° rotational symmetry. In this modification example, Figure 16 , the representative length dl is the length of the portion of the wall surface 150c closest to, as shown in Figure 16 , the width direction of the involute shape. In addition, the longest portion length d2 is the length of the portion of the wall surface 150c farthest from, as shown in , the circumferential direction of the involute shape.

[0107] Figure 17is a partial sectional view showing the first gas supply path 150 of another modification example. In this modification example, the gas inlet port 16 includes the first gas supply path 150 and a second gas supply path 151. The second gas supply path 151 is formed in the base 120. The first gas supply path 150 and the second gas supply path 151 are in communication with each other on the connecting surface of the electrostatic chuck 121 and the base 120. Figure 11 is a partial plan view of the first gas supply path 150 of the modification example shown in FIG. 17, as viewed in the positive direction of the Z axis in FIG. 17. Figure 11 and Figure 16 is a partial plan view of the first gas supply path 150 of the modification example shown in FIG. 17, as viewed in the positive direction of the Z axis in FIG. 17. Figure 17 In the modification example shown in FIG. 17, the second end portion 150b has a size including the maximum length d3 in the oblique direction. Thus, the first end portion 150a is not visible from the second end portion 150b in plan view.

[0108] Figure 18 is a partial sectional view showing the first gas supply path 150 of another modification example. In this modification example, the gas inlet port 16 includes the first gas supply path 150 and a second gas supply path 151. The second gas supply path 151 is formed in the base 120. The first gas supply path 150 and the second gas supply path 151 are in communication with each other on the connecting surface of the electrostatic chuck 121 and the base 120. Figures 19-23 In the modification example shown in FIG. 17, the second end portion 150b has a size including the maximum length d3 in the oblique direction. Thus, the first end portion 150a is not visible from the second end portion 150b in plan view.

[0109] (Second Embodiment)

[0110] <Static Chuck>

[0111] Hereinafter, the structure and modification examples of the gas supply path in the static chuck of the second embodiment of the present application will be described with reference to FIGS. 18 to 22. Figure 19

[0112] Figure 19 is a partial sectional view showing the structure example of the first gas supply path 200 of the second embodiment. Further, FIG. 18 is a partial sectional view of the first gas supply path 200 of the second embodiment, as viewed in the positive direction of the Z axis in FIG. 18. Figure 19 is a sectional view of the first gas supply path parallel to the offset direction X and the length direction.

[0113] In the modification example shown in FIG. 17, the second end portion 150b has a size including the maximum length d3 in the oblique direction. Thus, the first end portion 150a is not visible from the second end portion 150b in plan view. Figure 4 In the modification example shown in FIG. 17, the second end portion 150b has a size including the maximum length d3 in the oblique direction. Thus, the first end portion 150a is not visible from the second end portion 150b in plan view.

[0114] ​The first gas supply path 200 includes a first end portion 200a on the back surface side (or the ring assembly back surface side) of the substrate W and a second end portion 200b. The first gas supply path 200 is connected to the second gas supply path 201 at the first end portion 200a. The first gas supply path 200 is formed in a formation portion 210 in the electrostatic chuck 121. The formation portion 210 includes a wall surface 200c that constitutes the first gas supply path 200. Further, the second end portion 200b of the first gas supply path 200 can be provided in the sleeve 220 described later provided in the susceptor 120 as illustrated, or can be provided in the electrostatic chuck 121. The heat transfer gas supplied to the heat transfer gas introduction port 132 can be supplied to the gap between the back surface of the substrate W and the central region 111a, or the gap between the back surface of the ring assembly 112 and the annular region 111b, via the first end portion 200a.

[0115] The second gas supply path 201 is formed in the plurality of sleeves 220 embedded in the susceptor 120. In other words, by connecting the divided end portions of the second gas supply path 201 formed in the plurality of sleeves 220, respectively, one second gas supply path 201 is formed as illustrated. Alternatively, the sleeves 220 can be formed integrally without being divided.

[0116] The first gas supply path 200 and the second gas supply path 201 have the same rounded rectangular shape as that of the first embodiment in a cross section perpendicular to the length direction, and have dimensions including a representative length dl and a longest portion length d2. In this case, the specific value of the representative length dl and the ratio of the representative length dl to the longest portion length d2 (d2 / dl) are the same as those of the first embodiment. Figure 20

[0117] The first gas supply path 200 is not visible from the second end portion 200b in plan view. In one embodiment, only the sleeve 220 is visible from the second end portion 200b in plan view. Such a structure is established in the present embodiment by the first gas supply path 200 being offset with respect to the second gas supply path 201. When the maximum length in the direction of the offset in plan view is d5 and the offset distance is d6, the structure in which the first end portion 200a is not visible from the second end portion 200b is established when the offset distance d6 is equal to or greater than the maximum length d5 in the direction of the offset (d6≥d5) according to the same principle as that described in the first embodiment.

[0118] Next, an example of the effect of the first gas supply path 200 of the second embodiment will be described. Figure 20 An example of the effect of the first gas supply path 200 of the second embodiment will be described. Figure 20 is a diagram illustrating an example of the effect of the first gas supply path 200 of the second embodiment.​

[0119] First, electrons generated in the first gas supply path 200 due to the ionization of the heat transfer gas, representing a length d1 of 0.5 mm or less. Figures 21-23 The electron (represented by "e") can easily come into contact with the wall surface 200c, which can shorten the straight-line distance that electrons can travel. Therefore, it can suppress the occurrence of abnormal discharge caused by potential difference in the first gas supply path 200 or the second gas supply path 201.

[0120] Furthermore, by having a ratio (d2 / d1) of 2 or more between the longest length d2 and the representative length d1, the density of heat transfer gas molecules in the first gas supply path 200 and the second gas supply path 201 can be reduced. By reducing the density of heat transfer gas molecules, ionization of the heat transfer gas can be suppressed, and the occurrence of the aforementioned abnormal discharge caused by the potential difference can be further suppressed.

[0121] Furthermore, by configuring the first end 200a so that it is not visible from the second end 200b when viewed from above, electrons accelerated in a direction perpendicular to the isopotential line EL representing the aforementioned potential difference will contact the sleeve 220 even when moved to their maximum extent. This further suppresses the occurrence of the aforementioned abnormal discharge.

[0122] Secondly, the following effect can also be achieved: When the ratio of the longest length d2 to the representative length d1 (d2 / d1) is 2 or more, compared to a ratio less than 2, the conductivity of the first gas supply path 200 and the second gas supply path 201 increases. Therefore, the occurrence of the aforementioned abnormal discharge can be suppressed without reducing the rate at which heat transfer gas is introduced into the heat transfer gas inlet 132.

[0123] Next, use Figure 21 A variation of the first gas supply path 200 and the second gas supply path 201 of the second embodiment will be described.

[0124] Figure 21 This is a partial cross-sectional view showing a modified example of the first gas supply path 200 and the second gas supply path 201. In this modified example, as... Figure 22 As shown, the first gas supply path 200 is tilted in the tilt direction (positive X-axis direction) by an angle θ. In this case, the tilt angle θ, the thickness t of the forming part 210, and the maximum length d3 in the tilt direction are defined in the same way as in the first embodiment. By satisfying the above formula (1), the first end 200a is not visible from the second end 200b.

[0125] Figure 22 This is a partial cross-sectional view showing the first gas supply path 200 and the second gas supply path 201 in another variation. In this variation, as...Figure 21 As shown, the first gas supply path 200 includes a plurality of sub-supply paths 230a, 230b. One sub-supply path 230b is inclined toward the positive direction of the X-axis, and the other sub-supply path 230a is inclined toward the negative direction of the X-axis. The sub-supply paths 230a, 230b each have the same size as the above-described modification example, and are connected to the second gas supply path 201 at the first end portion 200a. In this modification example as well, the first end portion 200a is not visible from the second end portion 200b. Figure 23 As shown, the first gas supply path 200 includes a plurality of sub-supply paths 230a, 230b. One sub-supply path 230b is inclined toward the positive direction of the X-axis, and the other sub-supply path 230a is inclined toward the negative direction of the X-axis. The sub-supply paths 230a, 230b each have the same size as the above-described modification example, and are connected to the second gas supply path 201 at the first end portion 200a. In this modification example as well, the first end portion 200a is not visible from the second end portion 200b.

[0126] Figure 23 is a partial cross-sectional view of the first gas supply path 200 and the second gas supply path 201 of yet another modification example. In this modification example, as shown in Figure 21 As shown, the first gas supply path 200 includes a plurality of sub-supply paths 230a, 230b. One sub-supply path 230b is inclined toward the positive direction of the X-axis, and the other sub-supply path 230a is inclined toward the negative direction of the X-axis. The sub-supply paths 230a, 230b each have the same size as the above-described modification example, and are connected to the second gas supply path 201 at the first end portion 200a. In this modification example as well, the first end portion 200a is not visible from the second end portion 200b. Figure 23 As shown, the first gas supply path 200 includes a plurality of sub-supply paths 230a, 230b. One sub-supply path 230b is inclined toward the positive direction of the X-axis, and the other sub-supply path 230a is inclined toward the negative direction of the X-axis. The sub-supply paths 230a, 230b each have the same size as the above-described modification example, and are connected to the second gas supply path 201 at the first end portion 200a. In this modification example as well, the first end portion 200a is not visible from the second end portion 200b. In Figures 12-17 In the first gas supply path 200 and the second gas supply path 201, the shapes in cross sections perpendicular to the length direction can be any of the shapes shown in the above-described modification examples of the first embodiment. Figure 18 In the first gas supply path 200 and the second gas supply path 201, the shapes in cross sections perpendicular to the length direction can be any of the shapes shown in the above-described modification examples of the first embodiment.

[0127] (Third Embodiment)

[0128] <Shutter>

[0129] The through hole 141 provided in the shutter 140 can also have the same structure as the above-described first gas supply path 150, 200, etc. Thereby, the occurrence of abnormal discharge at the through hole 141 or the gas discharge port 10e, etc. can be suppressed.

[0130] (Formation method of gas supply path or through hole)

[0131] The above-described first gas supply path 150 and the second gas supply path 151 of the first embodiment, the first gas supply path 200 and the second gas supply path 201 of the second embodiment, and the through hole 141 of the third embodiment can be formed by water laser processing (also referred to as water jet laser processing, water beam laser processing), for example.

[0132] In the water laser processing, a jet stream of water or liquid is emitted to a forming portion (forming portion 160, 210, sleeve 220, or base portion of the baffle) of a gas supply path in the upper electrode 17, electrostatic chuck 121, or baffle 140, and the laser beam is made to travel inside the jet stream using the principle of an optical fiber. At the end of the jet stream, processing is performed using the laser beam, and the forming portion is cooled and the processing chips are discharged using the jet stream. In comparison with the conventional processing method described above, a hole with a high aspect ratio can be formed, and the representative length dl of the first gas supply path 150 (including the sub-supply paths 170a, 170b) of the first embodiment, the representative length dl of the first gas supply path 200 and the second gas supply path 201 of the second embodiment, and the width of the through-hole 141 of the third embodiment can be formed to be 0.5 mm or less. In addition, in comparison with the conventional laser processing, the laser focal point is maintained using the water jet stream, and thus, the advantage that the focal point depth does not need to be adjusted is obtained. As one example, the water laser processing can be performed using a laser processing machine "Luminizer LB300 / LB500" manufactured by Matsuura Machinery Co., Ltd. ("Matsuura Machinery Co., Ltd." and "Luminizer" are registered trademarks), or the like.

[0133] It is also possible to configure one internal member of a plasma processing apparatus by combining a plurality of members in which holes are formed by water laser processing. In this case, in the first embodiment, the first gas supply path 150 is formed by water laser processing, the third gas supply path 180 is formed by MC processing, and these are combined to configure one upper electrode 17. ​ In the modification shown in FIG. 17, the first gas supply path 150 can be formed by water laser processing, the third gas supply path 180 can be formed by MC processing, and these can be combined to configure one upper electrode 17. In addition, in the second embodiment, holes can be formed in a plurality of sleeves 220 by water laser processing, a through-hole can be formed in the base 120 by MC processing, and the plurality of sleeves 220 can be embedded in the through-hole, whereby the base 120 having the second gas supply path 201 can be configured.

[0134] The embodiments disclosed this time are to be considered as illustrative and not restrictive in all aspects. The above-described embodiments can be omitted, substituted, changed, in various ways without departing from the scope and the spirit of the appended claims. For example, the constituent elements of the above-described embodiments can be combined arbitrarily. From the arbitrary combination, the effects and advantages of each of the constituent elements involved in the combination are of course obtained, and other effects and other advantages that are apparent to those skilled in the art from the description of this specification are also obtained.

[0135] In addition, the effects described in the present specification are merely illustrative or exemplified, and the present technology is not limited thereto. That is, the present technology can achieve one or more of the above-described effects and additional effects apparent from the following description to those skilled in the art based on the present specification.

[0136] Legend of reference numerals

[0137] 1 plasma processing apparatus, 150, 200 first gas supply path, 151, 201 second gas supply path, 160, 210 formation portion, 150a, 200a first end portion, 150b, 200b second end portion.

Claims

1. A plasma processing apparatus characterized by comprising: a plasma processing apparatus inner member, the plasma processing apparatus inner member including a gas supply path and a formation portion capable of forming the gas supply path, in a case where a representative length of the gas supply path in a cross section perpendicular to a length direction of the gas supply path is dl, and a longest portion length is d2, the representative length dl is 0.5 mm or less, a ratio d2 / dl of the longest portion length d2 with respect to the representative length dl is 2 or more, another end portion of the gas supply path is not visible from one end portion of the gas supply path in plan view, and a thickness of the formation portion is 2 mm or more.

2. The plasma processing apparatus according to claim 1, characterized in that, in a case where a thickness of the formation portion is t, an inclination angle of the gas supply path with respect to a thickness direction of the formation portion is θ, and a maximum length in an inclination direction of the gas supply path in plan view is d3, the following expression (1) is satisfied: tan θ ≥ d3 / t... (1).

3. The plasma processing apparatus according to claim 2, characterized in that, a cross-sectional shape of the gas supply path in the cross section is a rounded rectangular shape.

4. The plasma processing apparatus according to claim 3, characterized in that, in a case where the inclination direction of the gas supply path is a short diameter direction of the gas supply path in plan view, the following expression (2) is satisfied, and in a case where the inclination direction of the gas supply path is a long diameter direction of the gas supply path in plan view, the following expression (3) is satisfied: sin θ ≥ dl / t... (2), sin θ ≥ d2 / t... (3).

5. The plasma processing apparatus according to claim 2, characterized in that, a cross-sectional shape of the gas supply path in the cross section is an elliptical shape.

6. The plasma processing apparatus according to claim 5, characterized in that, in a case where the inclination direction of the gas supply path is a short diameter direction of the gas supply path in plan view, the following expression (2) is satisfied, and in a case where the inclination direction of the gas supply path is a long diameter direction of the gas supply path in plan view, the following expression (3) is satisfied: sin θ ≥ dl / t... (2), sin θ ≥ d2 / t... (3).

7. The plasma processing apparatus according to claim 2, characterized in that, a cross-sectional shape of the gas supply path in the cross section is a C shape.

8. The plasma processing apparatus according to claim 2, characterized in that, the gas supply path includes a plurality of sub supply paths, and a pair of cross-sectional shapes of one of the sub supply paths and another of the sub supply paths in the cross section is a pair of C shapes.

9. The plasma processing apparatus according to claim 2, characterized in that, the gas supply path includes a plurality of sub supply paths, and the sub supply paths each have a cross-sectional shape of an involute shape, and a plurality of the sub supply paths are disposed rotationally symmetrically with respect to the cross-sectional shape.

10. The plasma processing apparatus according to any one of claims 1 to 9, characterized in that, ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The internal member of the plasma processing apparatus constitutes a shower head.

11. The plasma processing apparatus according to claim 10, wherein: The formation portion is provided in the upper electrode.

12. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The internal member of the plasma processing apparatus constitutes a heat transfer gas supply portion.

13. The plasma processing apparatus according to claim 12, wherein: The formation portion is provided in the electrostatic chuck.

14. The plasma processing apparatus according to any one of claims 1 to 9, wherein: The internal member of the plasma processing apparatus constitutes a baffle.

15. An internal part of a plasma processing apparatus, characterized in that includes: a gas supply path; and a formation portion capable of forming the gas supply path, when a representative length of the gas supply path in a cross section perpendicular to a length direction of the gas supply path is d1 and a longest portion length is d2, the representative length d1 is 0.5 mm or less, a ratio d2 / d1 of the longest portion length d2 to the representative length d1 is 2 or more, another end portion of the gas supply path is not visible from one end portion of the gas supply path in plan view, a thickness of the formation portion is 2 mm or more.

16. The internal member of the plasma processing apparatus according to claim 15, wherein: when a thickness of the formation portion is t, an inclination angle of the gas supply path with respect to a thickness direction of the formation portion is θ, and a maximum length in an inclination direction of the gas supply path in plan view is d3, the following equation (1) is satisfied: tan θ ≥ d3 / t ··· (1).

17. The internal member of the plasma processing apparatus according to claim 16, wherein: a cross-sectional shape of the gas supply path in the cross section is a rounded rectangular shape.

18. The internal member of the plasma processing apparatus according to claim 17, wherein: when the inclination direction of the gas supply path is a short diameter direction of the gas supply path in plan view, the following equation (2) is satisfied, when the inclination direction of the gas supply path is a long diameter direction of the gas supply path in plan view, the following equation (3) is satisfied, sin θ ≥ d1 / t ··· (2), sin θ ≥ d2 / t ··· (3).

19. The internal member of the plasma processing apparatus according to claim 16, wherein: a cross-sectional shape of the gas supply path in the cross section is an elliptical shape.

20. The internal member of the plasma processing apparatus according to claim 19, wherein: when the inclination direction of the gas supply path is a short diameter direction of the gas supply path in plan view, the following equation (2) is satisfied, when the inclination direction of the gas supply path is a long diameter direction of the gas supply path in plan view, the following equation (3) is satisfied, sin θ ≥ d1 / t ··· (2), sin θ ≥ d2 / t ··· (3). ​

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