Light emitting diode and light emitting device

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a light-emitting diode and a light-emitting device. The first current blocking layer comprises a first blocking layer and a second blocking layer; the transparent conducting layer is provided with an opening part and a protruding part, a gap part is formed between the opening part and the first barrier layer, the protruding part is located on the inner surface of the opening part, and the lower surface of the protruding part and the upper surface of the second barrier layer are at least partially overlapped; the first electrode is electrically connected with the first semiconductor layer; and the second electrode is electrically connected with the second semiconductor layer. According to the invention, the condition that the transparent conductive layer or the first current barrier layer is broken due to the extrusion force of the push broach in the routing process of the light-emitting diode can be effectively improved, and the problem that the second electrode falls off is avoided.

Description

Light-emitting diode and light-emitting device Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a light emitting diode and a light emitting device. Background Art

[0002] A light-emitting diode (LED) is a device made of semiconductor materials, a tiny solid-state light source that converts electrical energy into light. Due to their small size, long lifespan, low drive voltage, low heat generation, low power consumption, fast response time, and environmentally friendly properties like mercury-free emission, as well as their ability to meet the demands of lightweight, thin, and miniaturized devices across a wide range of applications, LEDs have become a ubiquitous electronic product in our daily lives.

[0003] A light-emitting diode typically includes an N-type layer, a light-emitting layer, a P-type layer, and electrodes (N-electrode and P-electrode). Referring to Figures 1 and 2 , since the P-type layer 13' has poor current spreading performance, a transparent conductive layer 40' is typically provided on the P-type layer 13' to ensure uniform current injection into the light-emitting layer 13'. Furthermore, to prevent current congestion beneath the P-electrode 70' and further promote current spreading, a current blocking layer 20' (CB) is typically added between the transparent conductive layer 40' and the P-type layer 13'. This intercepts current that would otherwise flow directly from the P-electrode 70' into the P-type layer 13', forcing the current to flow through the transparent conductive layer 40' before flowing through it into the underlying P-type layer 13'. However, during the thrust test of a light-emitting diode, a significant compressive force is applied to the P-electrode 70', which transfers this compressive force to the transparent conductive layer 40'. Due to the height difference between the transparent conductive layer 40' and the current blocking layer 20' (a step exists at the contact point between the two), and due to the hardness and brittleness of the oxide itself, the transparent conductive layer 40' or the current blocking layer 20' may easily break, causing the electrode to fall off, thereby affecting the reliability of the light-emitting diode.

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light-emitting diode and a light-emitting device to improve the electrode collapse abnormality caused by the transparent conductive layer or the current blocking layer being squeezed and broken by the thrust, reduce the proportion of electrode abnormality caused by wire bonding thrust, and improve the yield of the light-emitting diode.

[0005] According to a first aspect of the present invention, there is provided a light-emitting diode, characterized in that it comprises: a semiconductor light-emitting stack comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence; a first current blocking layer disposed on the second semiconductor layer, the first current blocking layer comprising a first blocking layer and a second blocking layer distributed on a side surface of the first blocking layer; a transparent conductive layer disposed on the second semiconductor layer and the first current blocking layer, the transparent conductive layer having an opening and a protrusion, the opening exposing a portion of the upper surface of the second semiconductor layer and the first current blocking layer, a gap being formed between the opening and the first blocking layer, the protrusion being located on an inner surface of the opening, and a lower surface of the protrusion at least partially overlapping with an upper surface of the second blocking layer; a first electrode disposed on the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode comprising a pad portion, the pad portion being disposed in the opening and electrically connected to the second semiconductor layer.

[0006] Preferably, the lower surface of the protrusion completely overlaps with the upper surface of the second barrier layer.

[0007] Preferably, the lower surface of the protrusion partially overlaps with the upper surface of the first barrier layer.

[0008] Preferably, the overlapping area between the lower surface of the protrusion and the upper surface of the first barrier layer is not larger than the non-overlapping area.

[0009] Preferably, the second barrier layer is evenly or unevenly distributed on the side surface of the first barrier layer.

[0010] Preferably, the first barrier layer is connected to the second barrier layer or is not connected to the second barrier layer.

[0011] Preferably, the number of the second barrier layers is not less than 2.

[0012] Preferably, the upper surface of the second barrier layer is in the shape of an arc, a sector, a semicircle, a circle, a triangle, a quadrilateral or a polygon.

[0013] Preferably, the side surface of the first barrier layer has a recessed portion, and the recessed portion is located in a region where the second barrier layer is not provided.

[0014] Preferably, the thickness of the second barrier layer is the same as or different from the thickness of the first barrier layer.

[0015] Preferably, the thickness of the second barrier layer is smaller than the thickness of the first barrier layer.

[0016] Preferably, the thickness of the second barrier layer is 1 / 2 to 6 / 7 of the thickness of the first barrier layer.

[0017] Preferably, the upper surface of the protrusion is flush with the upper surface of the first barrier layer.

[0018] Preferably, the second electrode further includes at least one extension strip connected to the pad portion, and the extension strip extends onto the transparent conductive layer and contacts the transparent conductive layer.

[0019] Preferably, the gap portion is provided at a position where the pad portion is connected to the extension strip.

[0020] Preferably, the device further comprises a second current blocking layer, which is arranged between the second semiconductor layer and the transparent conductive layer and is located below the extension strip.

[0021] Preferably, the second blocking layer is connected to or not connected to the first current blocking layer.

[0022] According to a second aspect of the present invention, there is provided a light emitting device comprising any one of the above-mentioned light emitting diodes.

[0023] The present invention has at least the following beneficial effects:

[0024] By optimizing the design of the first current-blocking layer and the transparent conductive layer, this invention effectively mitigates the risk of cracking of the transparent conductive layer or the first current-blocking layer due to the extrusion force of the pusher blade during the bonding process, while maintaining high LED brightness. This also prevents the second electrode from detaching. Experimental results have shown that the proportion of abnormal pusher electrodes in LEDs has decreased by 6%, while also reducing voltage and maintaining essentially the same brightness.

[0025] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purposes and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG1 is a schematic diagram of a top view of a conventional light emitting diode.

[0027] FIG2 is a schematic diagram of the cross-sectional structure of a conventional light emitting diode.

[0028] FIG3 is a schematic diagram of a partial top view of the structure of one of the conventional light emitting diodes.

[0029] FIG4 is a schematic diagram of a partial top view of the structure of a second conventional light emitting diode.

[0030] FIG5 is a schematic diagram of a top view of the light emitting diode according to Example 1 of the present invention.

[0031] FIG6 is a schematic diagram of a partial top view of the structure of a light emitting diode according to one embodiment 1 of the present invention.

[0032] FIG7 is a schematic diagram of a partial top view of the light emitting diode according to the second embodiment of the present invention.

[0033] FIG8 is a schematic diagram of the cross-sectional structure of a light emitting diode according to Example 2 of the present invention.

[0034] FIG9 is a schematic diagram of a partial top view of the structure of a light emitting diode according to Example 3 of the present invention.

[0035] FIG10 is a schematic diagram of the cross-sectional structure of a light emitting diode according to Example 3 of the present invention.

[0036] FIG11 is a schematic diagram of a top view of the structure of a light emitting diode according to Example 4 of the present invention.

[0037] FIG12 is a schematic diagram of a partial top view of the light emitting diode according to Example 4 of the present invention.

[0038] Figure annotation:

[0039] 11', N-type layer; 12', light-emitting layer; 13', P-type layer; 20', current blocking layer; 40', transparent conductive layer; 60', N-electrode; 70', P-electrode; 80', substrate.

[0040] 10. Semiconductor light-emitting stack; 11. First semiconductor layer; 12. Light-emitting layer; 13. Second semiconductor layer; 20. First current blocking layer; 21. First blocking layer; 22. Second blocking layer; 23. Recessed portion; 30. Second current blocking layer; 40. Transparent conductive layer; 41. Opening portion; 42. Protruding portion; 50. Gap portion; 60. First electrode; 70. Second electrode; 71. Pad portion; 72. Extension strip; 80. Substrate. Example

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention. Example 1

[0042] Referring to FIG5 , an embodiment of the present invention provides a light-emitting diode, comprising a semiconductor light-emitting stack 10, a first current-blocking layer 20, a transparent conductive layer 40, and electrodes. The semiconductor light-emitting stack 10 comprises a first semiconductor layer 11, a light-emitting layer 12, and a second semiconductor layer 13 stacked in sequence; the first current-blocking layer 20 is disposed on the second semiconductor layer 13; the transparent conductive layer 40 is disposed on the second semiconductor layer 13 and the first current-blocking layer 20; and the electrodes comprise a first electrode 60 and a second electrode 70, disposed on the semiconductor light-emitting stack 10 and electrically connected thereto.

[0043] Specifically, the semiconductor light-emitting stack 10 can be formed on a substrate 80 by methods such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), physical vapor deposition, or ion plating. The substrate 80 can be an insulating substrate, preferably made of a transparent, semi-transparent, or non-transparent material. The substrate 80 can be a sapphire (Al2O3) substrate or a patterned sapphire substrate, but is not limited thereto. The substrate 80 can be thinned or removed in subsequent processes.

[0044] The first semiconductor layer 11 and the second semiconductor layer 13 can both be formed by stacking multiple layers of III-V compound semiconductor layers, which can be a single-layer structure or a multi-layer structure, and can be N-type doped or P-type doped to provide electrons or holes. The n-type doping impurity type can be Si, Ge, or Sn, and the p-type doping impurity type can be Mg, Zn, Ca, Sr, or Ba. The present invention does not exclude the doping of other elements that are equivalent to substitution. The doping conditions of the first semiconductor layer 11 and the second semiconductor layer 13 are different. In this embodiment, the first semiconductor layer 11 is an n-type semiconductor layer and the second semiconductor layer 13 is a p-type semiconductor layer. The light-emitting layer 12 is a material that can provide light radiation. It is an area where electrons and holes recombine to emit light. The light-emitting layer 12 can be a single quantum well or a multi-quantum well structure.

[0045] The second semiconductor layer 13 is etched to the first semiconductor layer 11 to expose a portion of the surface of the first semiconductor layer 11. A first electrode 60 is disposed on the exposed surface of the first semiconductor layer 11. The first electrode 60 is in direct contact with the first semiconductor layer 11 to form an electrical connection. A first current blocking layer 20 is disposed on the unetched portion of the surface of the second semiconductor layer 13. A transparent conductive layer 40 is disposed on the remaining surface of the second semiconductor layer 13 and the surface of the first current blocking layer 20. Then, a second electrode 70 is disposed to form an electrical connection with the second semiconductor layer 13.

[0046] The setting of the current blocking layer has a significant impact on the brightness and solderability of the LED. The current blocking layer of traditional LEDs usually adopts the following two design schemes:

[0047] (1) Full CB design (the size of the current blocking layer 20' is larger than the size of the electrode above it), see Figure 3 for details. Although this design can improve the problem of electrode absorption of light to the greatest extent, due to the superposition of three layers of film in the edge area, namely the current blocking layer 20', the electrode and the transparent conductive layer 40', it is very easy for the current blocking layer 20' or the transparent conductive layer 40' to be ruptured by the squeezing force during the thrust verification process, resulting in the abnormality of electrode falling off.

[0048] (2) CB shrinkage design (the size of the current blocking layer 20' is smaller than the size of the electrode above it), see Figure 4 for details. Although this design solution can make the current blocking layer 20' not exist in the edge area, it can effectively avoid the current blocking layer 20' from being cracked by the squeezing force during the thrust verification process and improve the abnormality of the electrode falling off. However, due to the reduction in the area of ​​the current blocking layer 20', the brightness of the light-emitting diode is greatly reduced, and the luminous efficiency is low.

[0049] To this end, embodiments of the present invention provide a light-emitting diode (LED) that optimizes the design of the first current-blocking layer 20 and the transparent conductive layer 40 to avoid the disadvantages of full-CB and recessed-CB designs. This ensures high brightness while effectively reducing wire bonding and electrode dropout issues. Referring to FIG6 , the first current-blocking layer 20 of this embodiment includes a first blocking layer 21 and a second blocking layer 22. The second blocking layer 22 is disposed on the side surface of the first blocking layer 21 and has the same thickness as the first blocking layer 21. In this embodiment, the first blocking layer 21 and the second blocking layer 22 are integrally formed (connected) to form a first current-blocking layer 20 having a concave-convex structure. The transparent conductive layer 40 has an opening 41 that exposes a portion of the upper surface of the second semiconductor layer 13 and the first current-blocking layer 20. A gap 50 (specifically, located in a concave region on the side surface of the first current-blocking layer) is formed between the opening 41 and the first blocking layer 21. Neither the first current-blocking layer 20 nor the transparent conductive layer 40 exists within the region of the gap 50.

[0050] Continuing with FIG. 6 , the transparent conductive layer further includes a protrusion 42 disposed on the inner surface of the opening 41 and integrally formed with the transparent conductive layer 40 (the protrusion 42 is a portion of the transparent conductive layer 40), resulting in the opening 41 of the transparent conductive layer 40 also having a concave-convex structure. The protrusion 42 is disposed on the second barrier layer 22 such that the lower surface of the protrusion 42 at least partially overlaps with the upper surface of the second barrier layer 22. This overlap can be partial or complete. The overlapping portion of the transparent conductive layer 40 (the hatched portion in the figure) further facilitates uniformly spreading current throughout the entire LED, thereby improving the LED's luminous efficiency. Therefore, the greater the overlap between the lower surface of the protrusion 42 and the upper surface of the second barrier layer 22, the better the current spreading effect. In other embodiments, the lower surface of the protrusion 42 may partially overlap with the upper surface of the first barrier layer 21 to further enhance the current spreading effect, as shown in FIG7 . It is important to avoid the overlapping area between the lower surface of the protrusion 42 and the upper surface of the first barrier layer 21 being larger than the non-overlapping area to minimize the impact on the photoelectric performance of the light-emitting diode.

[0051] The second electrode 70 includes a pad portion 71, which is disposed within the opening 41 to further enhance the robustness of the second electrode 70. Specifically, the pad portion 71 covers a portion of the protrusion 42, the gap 50, and the first current-blocking layer 20. A portion of the bottom surface of the pad portion 71 directly contacts the second semiconductor layer 13 through the gap 50, while the remaining bottom surface indirectly contacts the second semiconductor layer 13 through the first current-blocking layer 20 and the transparent conductive layer 40, thereby electrically connecting the second electrode 70 to the second semiconductor layer 13.

[0052] The LED of this embodiment utilizes the aforementioned optimized pattern design of the first current-blocking layer 20 and the transparent conductive layer 40 to form a structure in which the transparent conductive layer 40 and the first current-blocking layer 20 (i.e., the protrusion 42 and the second blocking layer 22) intersect with each other, as well as a gap region where neither the transparent conductive layer 40 nor the first current-blocking layer 20 is present. Within the intersect region, the second blocking layer 22 effectively blocks light absorption by the second electrode 70, thereby ensuring the brightness of the LED. Simultaneously, the transparent conductive layer 40 (the protrusion 42) effectively distributes the current evenly throughout the LED. In the region where the gap 50 is located, since neither the first current-blocking layer 20 nor the transparent conductive layer 40 exists, there are no height differences or steps in this region. This effectively prevents cracking of the first current-blocking layer 20 or the transparent conductive layer 40 when a push knife is used to perform a force test at the gap 50, thereby reducing the risk of electrode dropout.

[0053] Regarding the arrangement of the second blocking layer 22 in the first current blocking layer 20. Based on actual production conditions, the number of second blocking layers 22 is at least 2, and preferably at most 30. Referring to FIG7 , the density of the second blocking layer 22 has a certain impact on brightness and solderability. The greater the density (number) of the second blocking layer 22, the greater the density (number) of the corresponding gaps 50. A high-density second blocking layer 22 significantly improves the brightness of the light-emitting diode. A high-density gap 50 can ensure that no matter which direction the push knife passes through, it can effectively avoid the area where the three layers of film, the first current blocking layer 20, the second electrode 70, and the transparent conductive layer 40, overlap. This prevents the transparent conductive layer 40 or the first current blocking layer 20 from being fractured due to stress, thereby improving the abnormality of electrode drop and improving the reliability of the light-emitting diode.

[0054] Furthermore, the second barrier layer 22 can be evenly (symmetrically or in an array) distributed on the side surface of the first barrier layer 21, or unevenly distributed on the side surface of the first barrier layer 21. In this embodiment, the second barrier layer 22 is preferably evenly distributed on the side surface of the first barrier layer 21. This not only maintains the uniformity of the light emitting diode's light, but also ensures that the push blade can enter and exit through the gap 50 during the thrust verification process, thereby further improving the electrode drop anomaly.

[0055] Furthermore, the second barrier layer 22 can be configured in various shapes. When viewed from above, the top surface of the second barrier layer 22 can be arc-shaped, fan-shaped, semicircular, circular, triangular, quadrilateral, or other polygonal shapes. Furthermore, the side surfaces of the second barrier layer 22 can also have rounded corners or edges to facilitate light extraction. In other embodiments, the side surfaces of the first barrier layer 21 have recessed portions 23 located in areas not provided with the second barrier layer 22 to further facilitate light extraction. See FIG. 7 .

[0056] Furthermore, the material of the first current-blocking layer 20 includes at least one transparent inorganic insulating material such as silicon dioxide, silicon nitride, silicon oxynitride, titanium oxide, or aluminum oxide. The first current-blocking layer 20 can also be a single layer or an alternating multilayer structure. A single layer can be made of a material with a high light transmittance, for example, greater than 80%, such as silicon dioxide (SiO2). The thickness of the first current-blocking layer 20 can be selected from any thickness between 50 and 500 nm.

[0057] In addition to promoting uniform current diffusion, the transparent conductive layer 40 also strengthens ohmic contact with the second electrode 70. The material of the transparent conductive layer 40 can be one or a combination of zinc oxide, zinc indium tin oxide, indium zinc oxide, zinc tin oxide, gallium indium tin oxide, gallium indium oxide, gallium zinc oxide, aluminum-doped zinc oxide, or fluorine-doped tin oxide. The transparent conductive layer 40 is preferably a zinc indium tin oxide (ITO) layer, which can be formed by evaporation or sputtering. In this embodiment, the thickness of the transparent conductive layer 40 is selected from the range of 5 nm to 500 nm. Alternatively, it is preferably selected from the range of 20 nm to 300 nm. Example 2

[0058] 8 , this embodiment has many of the same features as the aforementioned embodiment. Here, the same features will not be described one by one, and only the differences will be described. The difference between this embodiment and the aforementioned embodiment is that the thickness of the first barrier layer 21 and the second barrier layer 22 are different.

[0059] In this embodiment, the thickness of the second barrier layer 22 is less than that of the first barrier layer 21. Preferably, the thickness of the second barrier layer 22 is between 1 / 2 and 6 / 7 of the thickness of the first barrier layer 21. The height difference between the second barrier layer 22 and the first barrier layer 21 is filled by the protrusion 42 (transparent conductive layer 40). This increases the area of ​​the transparent conductive layer 40, improves the current spreading capability of the LED, and further enhances the brightness. Furthermore, preferably, the upper surface of the protrusion 42 is flush with the upper surface of the first barrier layer 21. This avoids a height difference (step) in this area, reduces the compressive force during thrust verification, reduces the probability of cracking the transparent conductive layer 40 or the first current-blocking layer 20, and alleviates the problem of electrode dropout. Example 3

[0060] 9 and 10 , this embodiment has many of the same features as the aforementioned embodiment. Here, the same features will not be described one by one, and only the differences will be described. The difference between this embodiment and the aforementioned embodiment is that the first barrier layer 21 and the second barrier layer 22 are not integrally formed, that is, the first barrier layer 21 and the second barrier layer 22 are not connected.

[0061] In this embodiment, there is no contact between the first barrier layer 21 and the second barrier layer 22, and a certain gap exists between them. This gap can be filled with a transparent conductive layer 40 to increase the overall area of ​​the transparent conductive layer 40 and achieve stronger current spreading capability. Alternatively, the gap can be directly grown with the second electrode 70 (pad portion 71) without the additional transparent conductive layer 40. Part of the second electrode 70 will be embedded in the gap, making it less likely to fall off, improving the firmness of the second electrode 70, and alleviating the problem of electrode falling off. Example 4

[0062] 11 and 12 , this embodiment has many of the same features as the aforementioned embodiment. Here, the same features will not be described one by one, and only the differences will be described. The difference between this embodiment and the aforementioned embodiment is that the second electrode 70 further includes at least one extension bar 72 connected to the pad portion 71, and the extension bar 72 extends onto the transparent conductive layer 40 and contacts the transparent conductive layer 40.

[0063] In this embodiment, an extension bar 72 is added to the pad portion 71 of the second electrode 70 so that the current of the pad portion 71 is expanded along the extension bar 72 to enhance the current expansion effect. In this embodiment, the end of the extension bar 72 can also be enlarged, and the enlarged portion is a solid sphere. In this way, the extension bar 72 has a better current expansion effect. Correspondingly, the first electrode 60 can also be provided with a similar extension bar, which is not specifically limited in this embodiment. Usually, when performing thrust verification on a light-emitting diode with an extension bar, the push knife mostly acts along the direction of the extension bar. Therefore, the gap portion 50 can be set at the position where the pad portion 71 is connected to the extension bar 72 to avoid rupture of the transparent conductive layer 40 or the first current blocking layer 20, thereby improving the problem of electrode drop.

[0064] Furthermore, to suppress over-injection of current below the extension strip 72 and increase the range and uniformity of current injection, the light-emitting diode may further include a second current blocking layer 30, which is disposed between the second semiconductor layer 13 and the transparent conductive layer 40 and below the extension strip 72. One end of the second current blocking layer 30 may be connected to or disconnected from the first current blocking layer 20. In this embodiment, the second current blocking layer 30 is disconnected from the first current blocking layer 20. Example 5

[0065] This embodiment further provides a light emitting device, which uses the light emitting diode provided by any of the above embodiments. The light emitting device can be, for example, a white light lighting device, a backlight display device, a car light, a flash light, a projection light, a stage light, etc.

[0066] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A light emitting diode, characterized in that include: A semiconductor light-emitting stack comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence; A first current blocking layer, disposed on the second semiconductor layer, the first current blocking layer comprising a first blocking layer and a second blocking layer distributed on a side surface of the first blocking layer; a transparent conductive layer, disposed on the second semiconductor layer and the first current blocking layer, the transparent conductive layer having an opening and a protruding portion, the opening exposing a portion of the upper surface of the second semiconductor layer and the first current blocking layer, a gap being formed between the opening and the first blocking layer, the protruding portion being located on an inner surface of the opening, and a lower surface of the protruding portion at least partially overlapping with an upper surface of the second blocking layer; A first electrode is disposed on the first semiconductor layer and is electrically connected to the first semiconductor layer; The second electrode includes a pad portion, which is disposed in the opening and electrically connected to the second semiconductor layer.

2. The light emitting diode according to claim 1, characterized in that: The lower surface of the protrusion completely overlaps with the upper surface of the second barrier layer.

3. The light emitting diode according to claim 1, characterized in that: The lower surface of the protrusion partially overlaps with the upper surface of the first barrier layer.

4. The light emitting diode according to claim 3, characterized in that: The overlapping area between the lower surface of the protrusion and the upper surface of the first barrier layer is not greater than the non-overlapping area.

5. The light emitting diode according to claim 1, characterized in that: The second barrier layer is evenly or unevenly distributed on the side surface of the first barrier layer.

6. The light emitting diode according to claim 1, characterized in that: The first barrier layer is connected to the second barrier layer or is not connected to the second barrier layer.

7. The light emitting diode according to claim 1, characterized in that: The number of the second barrier layers is not less than 2.

8. The light emitting diode according to claim 1, characterized in that: The upper surface of the second barrier layer is in an arc shape, a fan shape, a semicircle, a circle, a triangle, a quadrilateral or a polygon.

9. The light emitting diode according to claim 1, characterized in that: The side surface of the first barrier layer has a recessed portion, and the recessed portion is located in a region where the second barrier layer is not disposed.

10. The light emitting diode according to claim 1, characterized in that: The thickness of the second barrier layer is the same as or different from the thickness of the first barrier layer.

11. The light emitting diode according to claim 10, characterized in that: The thickness of the second barrier layer is smaller than that of the first barrier layer.

12. The light emitting diode according to claim 11, characterized in that: The thickness of the second barrier layer is 1 / 2 to 6 / 7 of the thickness of the first barrier layer.

13. The light emitting diode according to claim 11, characterized in that: The upper surface of the protrusion is flush with the upper surface of the first barrier layer.

14. The light emitting diode according to claim 1, characterized in that: The second electrode further includes at least one extension bar connected to the pad portion, wherein the extension bar extends onto the transparent conductive layer and contacts the transparent conductive layer.

15. The light emitting diode according to claim 14, characterized in that: The gap portion is arranged at a position where the pad portion is connected to the extension bar.

16. The light emitting diode according to claim 14 or 15, characterized in that: The invention also comprises a second current blocking layer, wherein the second current blocking layer is arranged between the second semiconductor layer and the transparent conductive layer and is located below the extension strip.

17. The light emitting diode according to claim 16, characterized in that: The second blocking layer is connected to or not connected to the first current blocking layer.

18. A light emitting device, characterized in that It comprises a light emitting diode as claimed in any one of claims 1 to 17.

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