Method for improving stability of resistive temperature sensor based on heat treatment

Abstract

The invention provides a method for improving the stability of a resistive temperature sensor based on heat treatment. The method comprises the following steps: carrying out multiple times of heat shock treatment on the resistive temperature sensor by adopting different heat shock parameters; testing a stability index of the resistive temperature sensor before and after the thermal shock treatment, and establishing a regulation and control relationship between the thermal shock parameter and the stability index; based on the regulation and control relationship, extracting ideal thermal shock parameters capable of improving the stability of the resistive temperature sensor; and carrying out thermal shock on the resistive temperature sensor under the ideal impact parameters to improve the stability of the sensor and obtain the final optimized resistive temperature sensor. Controllable optimization of the stability of the resistance-type temperature sensor is achieved, the sensor does not depend on a sensor packaging barrier, and the sensor can be suitable for severe environments such as vibration or corrosion.

Description

Technical Field

[0001] This invention relates to the field of temperature sensor technology, and more specifically, to a method for improving the stability of a resistive temperature sensor based on heat treatment. Background Technology

[0002] Precise on-chip temperature measurement technology is essential for high-precision temperature monitoring and control across a wide temperature range, from cryogenic temperatures to near room temperature, in fields such as quantum information, aerospace, new energy, and semiconductor manufacturing. Highly stable temperature sensors are crucial for accurate temperature measurement. Currently, various types of temperature sensors are available, including thermocouples, diodes, and resistive sensors. Resistive temperature sensors are further classified into positive and negative temperature coefficient of resistance (TCC) types, corresponding to the conductivity characteristics of metals and semiconductors, respectively. Thermocouple and diode temperature sensors, in particular, suffer from low stability, making them unsuitable for the high-precision temperature monitoring demands of modern research. Resistive temperature sensors measure temperature by observing the change in resistance of a temperature-sensitive element with temperature, offering a wide response temperature range and excellent stability, making them suitable for high-precision research. To meet the ever-increasing demand for high-precision temperature measurement in modern research, it is imperative to further improve the stability of resistive temperature sensors.

[0003] A search of existing technologies revealed the following:

[0004] Chinese invention patent application CN119803708A discloses a high-stability temperature sensor, which improves the temperature measurement stability by using a sealing assembly to achieve a sealed connection between a protective sleeve and a connecting sleeve, and by filling the filling cavity at the connection between the protective sleeve and the connecting sleeve with oxygen-reactive reactive powder. However, improving the stability of a temperature sensor through external structural optimization has problems such as poor environmental adaptability and complex manufacturing processes, and the complex packaging design of the sensor is prone to introducing new instability factors.

[0005] Chinese invention patent application CN102300829A discloses a metal oxide sintered body for a thermistor, comprising hot annealing the mixed sintered body at 900°C or higher to obtain a stable ZrO2 structure, enabling the thermistor to exhibit a small resistance change at approximately 1100°C. Hou Xiaowei, Liu Lina, et al., in the *Journal of Sensor Technology*, wrote "Study on the Temperature Coefficient of Resistance of MEMS Platinum Thin Film Temperature Sensors," indicating that hot annealing can significantly improve the stability and repeatability of platinum thin film temperature sensors. Zhang Qian, Yuan Yan, et al., in *Instruments and Equipment*, wrote "Study on the Preparation Process of Thin Film Platinum Resistance Sensors," reporting the influence of heat treatment processes on the resistance and other properties of thin film platinum resistance temperature sensors, pointing out that heat treatment can obtain highly stable thin film platinum resistance temperature sensors. All of the above technologies indicate that hot annealing helps improve the stability of resistive temperature sensors. However, hot annealing is usually carried out at high temperatures, so oxygen contamination of the resistive material is difficult to avoid during the process, which will have a destructive effect on resistive temperature sensors. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this invention is to provide a method for improving the stability of a resistive temperature sensor based on heat treatment, thereby improving stability while avoiding destructive effects on the resistive temperature sensor.

[0007] To achieve the above objectives, the present invention provides a method for improving the stability of a resistive temperature sensor based on heat treatment, comprising:

[0008] The resistive temperature sensor was subjected to multiple thermal shock treatments using different thermal shock parameters.

[0009] The stability index of the resistive temperature sensor before and after the thermal shock treatment was tested, and the control relationship between the thermal shock parameter and the stability index was established.

[0010] Based on the aforementioned control relationship, ideal thermal shock parameters that can improve the stability of the resistive temperature sensor are extracted.

[0011] The resistive temperature sensor is subjected to thermal shock under the ideal shock parameters to improve the stability of the sensor and obtain the final optimized resistive temperature sensor.

[0012] Optionally, the thermal shock parameters include:

[0013] Temperature variation range, that is, the temperature difference between the highest and lowest temperatures that the resistive temperature sensor withstands during thermal shock.

[0014] The rate of temperature change is the amount of temperature change per unit time from the initial temperature to the target temperature by the resistive temperature sensor.

[0015] The holding time is the duration for which the resistive temperature sensor maintains a constant temperature at the highest or lowest temperature.

[0016] The number of cycles refers to the number of times the temperature change process from the starting temperature through the highest and lowest temperatures and back to the starting temperature is repeated.

[0017] By adjusting one or more of the above thermal shock parameters, the resistive temperature sensor can be subjected to thermal shock under different shock schemes.

[0018] Optionally, the process of subjecting the resistive temperature sensor to multiple thermal shock treatments using different thermal shock parameters includes:

[0019] Set the thermal shock parameters;

[0020] The resistive temperature sensor is cooled from room temperature to a specified minimum temperature at a specified first temperature change rate, and held at the specified minimum temperature for a first specified time.

[0021] After the low-temperature insulation is completed, the resistive temperature sensor is heated to the specified maximum temperature at the second temperature change rate, and then kept at the specified maximum temperature for a second specified time.

[0022] After the high-temperature insulation is completed, the resistive temperature sensor is cooled to room temperature at a third temperature change rate to complete a thermal shock cycle.

[0023] Repeat the above process and the above impact parameters until all specified cycles are completed to complete the thermal shock treatment of the resistive temperature sensor. During the above thermal shock treatment, the first temperature change rate and the third temperature change rate are the same, the second temperature change rate is the same as or different from the first temperature change rate and the third temperature change rate, and the first specified time and the second specified time are the same as or different.

[0024] Optionally, the multiple thermal shock treatment includes:

[0025] The resistive temperature sensor is cooled from room temperature to a specified minimum temperature in the range of 4.2 to 100 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and held at the specified minimum temperature for a specified time in the range of 1 to 120 minutes.

[0026] After the low-temperature insulation is completed, the resistive temperature sensor is heated to a specified maximum temperature in the range of 250 to 350 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and then kept at the specified maximum temperature for a specified time in the range of 1 to 120 minutes.

[0027] After the high-temperature insulation is completed, the resistive temperature sensor is cooled to room temperature at a specified temperature change rate within the range of 0.05 to 60 K / s to complete one thermal shock cycle.

[0028] Repeat the above process and the above impact parameters until the specified number of cycles is completed. The number of cycles is set in the range of 5 to 50.

[0029] Optionally, the key stability indicators include:

[0030] Repeatability refers to the consistency between the results of multiple consecutive tests conducted at the same temperature.

[0031] Reproducibility refers to the consistency between the measurement results before and after the change of test conditions at the same temperature, under different test conditions.

[0032] Optionally, the change of test conditions can be achieved in any of the following ways:

[0033] - Perform thermal shock treatment on the resistive temperature sensor;

[0034] - Let the resistive temperature sensor stand at room temperature for a period of time.

[0035] Optionally, the resistance temperature sensor is subjected to thermal shock under the ideal shock parameters to improve the stability of the sensor. This is achieved by releasing the residual stress of the resistive material and stabilizing the crystal structure of the resistive material through thermal shock.

[0036] Optionally, the resistive temperature sensor includes either a positive temperature coefficient of resistance (TCR) type or a negative temperature coefficient of resistance (TCR) type, utilizing the conductivity characteristics of the resistive material's positive or negative temperature coefficient to achieve temperature sensing.

[0037] Optionally, the positive resistance temperature coefficient type resistor material includes: one of pure metal materials such as platinum, nickel, and copper; or any one of metal materials such as rhodium-iron and platinum-cobalt containing a small amount of dopant.

[0038] The negative resistance temperature coefficient type resistor material includes one of germanium, carbon glass, transition metal oxide, transition metal nitride, or transition metal nitride.

[0039] Optionally, the structure of the resistive temperature sensor includes any one of the following: thin film, thick film, wire-wound, and microbead type.

[0040] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0041] Compared to methods that improve sensor stability through complex packaging, this invention optimizes the stability of resistive temperature sensors from the physical level of the resistive material by subjecting them to thermal shock. This approach does not rely on sensor packaging barriers and allows the sensors to be used in harsh environments such as vibration or corrosion.

[0042] Compared with thermal annealing to improve sensor stability, the thermal shock heat treatment method for resistive temperature sensors proposed in this invention does not require high-temperature treatment, reduces the risk of oxygen contamination of resistive materials, and thus avoids the performance of temperature sensors being damaged by oxygen contamination.

[0043] The method for improving the stability of a resistive temperature sensor based on heat treatment described above in this invention systematically studies the influence of thermal shock parameters on the stability of the resistive temperature sensor, establishes the controllable relationship between thermal shock parameters and sensor stability, and thus achieves controllable optimization of the stability of the resistive temperature sensor. Attached Figure Description

[0044] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0045] Figure 1 This is a flowchart of a method for improving the stability of a resistive temperature sensor based on heat treatment, according to an embodiment of the present invention.

[0046] Figure 2 This is a thermal shock process of different schemes for a resistive temperature sensor based on a zirconium oxynitride thin film in one embodiment of the present invention.

[0047] Figure 3 This is a repeatability test result of a resistive temperature sensor based on a zirconium oxynitride thin film in one embodiment of the present invention at 18.3K temperature before impact and after impact under different impact schemes. Detailed Implementation

[0048] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention. These all fall within the scope of protection of the present invention.

[0049] Reference Figure 1 As shown, an embodiment of the present invention provides a method for improving the stability of a resistive temperature sensor based on heat treatment, the method comprising:

[0050] S100 employs different thermal shock parameters to subject the resistive temperature sensor to multiple thermal shock treatments.

[0051] In this step, the resistive temperature sensor is subjected to thermal shock treatment. By adjusting the thermal shock parameters, the resistive temperature sensor is subjected to thermal shock under different shock schemes.

[0052] S200 is used to test the stability of a resistive temperature sensor before and after thermal shock treatment, and to establish the control relationship between thermal shock parameters and stability indicators.

[0053] S300, based on the control relationship, extracts ideal thermal shock parameters that can improve the stability of resistive temperature sensors;

[0054] The S400 process involves subjecting a resistive temperature sensor to thermal shock under ideal shock parameters to improve the sensor's stability and obtain the final optimized resistive temperature sensor.

[0055] In this step, the stability of the resistive temperature sensor is optimized from the physical level of the resistive material by subjecting it to thermal shock. This eliminates the need for sensor packaging barriers and makes the sensor suitable for harsh environments such as vibration or corrosion.

[0056] In the above embodiments of the present invention, by subjecting the resistive temperature sensor to thermal shock heat treatment, atomic rearrangement within the resistive material is promoted, and the internal residual stress of the resistive material is released, thereby improving the electrical stability of the resistive material and optimizing the stability of the resistive temperature sensor based on the resistive material.

[0057] In some embodiments of the present invention, the resistive temperature sensor includes positive temperature coefficient of resistance (TTC) type and negative temperature coefficient of resistance (TCR) type. The resistance of the resistive material of the positive temperature coefficient type decreases as the temperature decreases, including pure metal materials such as platinum, nickel, and copper, and metal materials containing a small amount of dopants such as rhodium-iron and platinum-cobalt. The resistance of the resistive material of the negative temperature coefficient type increases as the temperature decreases, including semiconductor materials such as germanium, carbon glass, transition metal oxides, transition metal nitrides, and transition metal oxynitrides. The transition metal elements in the transition metal oxides include ruthenium, vanadium, manganese, cobalt, and nickel, while the transition metal elements in the transition metal nitrides and transition metal oxynitrides include titanium, zirconium, hafnium, chromium, and niobium.

[0058] In other implementations, temperature sensors based on other resistive materials can also be used, as long as the positive or negative temperature coefficient of the resistive material can be used to achieve temperature sensing.

[0059] In some embodiments of the present invention, the resistive temperature sensor structure includes thin-film, thick-film, wire-wound, and microbead types. In other embodiments, other temperature sensor structures can also be used, as long as they are resistive temperature sensors.

[0060] To better achieve the aforementioned thermal shock and improve stability, in some embodiments of the present invention, the thermal shock parameters of S100 include: temperature change range, temperature change rate, holding time, number of cycles, etc. The resistive temperature sensor can be subjected to thermal shock under different shock schemes by adjusting one or more of the aforementioned thermal shock parameters.

[0061] In other implementations, other thermal shock parameters can be adjusted, as long as the thermal shock intensity can be controlled. Thermal shock intensity refers to the severity of the thermal shock; the greater the thermal stress during the impact process, the stronger the impact intensity.

[0062] In some embodiments of the present invention, in S100, the heat treatment method for thermal shock of the resistive temperature sensor is implemented in the following manner: the resistive temperature sensor is cooled from room temperature to a specified minimum temperature at a specified temperature change rate, and held at the specified minimum temperature for a specified time; after the low temperature holding period, the resistive temperature sensor is heated to a specified maximum temperature at a specified temperature change rate, and held at the specified maximum temperature for a specified time; after the high temperature holding period, the resistive temperature sensor is cooled to room temperature at a specified temperature change rate, completing one thermal shock cycle; the above process is repeated until all specified cycles are completed.

[0063] In the above thermal shock treatment process, the temperature change rate is the same in both cooling processes. The temperature change rate in the heating process can be the same as or different from the temperature change rates in the two cooling processes. The holding times at the lowest and highest temperatures can be the same or different. Any one shock parameter can be adjusted within a specified range, while the other shock parameters remain fixed. When the adjusted shock parameter corresponds to the temperature change rate of the cooling process, the temperature change rates of both cooling processes are simultaneously adjusted to ensure that the temperature change rates of the two cooling processes are the same.

[0064] Furthermore, adjusting any one of the impact parameters within the specified range can be done once or multiple times. After each adjustment, the resistive temperature sensor undergoes the aforementioned thermal shock treatment process. Similarly, adjusting any one or multiple impact parameters within the specified range is not allowed. When adjusting multiple impact parameters, only one parameter can be adjusted at a time, and after each single adjustment, the resistive temperature sensor undergoes the aforementioned thermal shock treatment process.

[0065] To better understand the thermal shock treatment method of the present invention, and in conjunction with the above-mentioned thermal shock parameters, in a preferred embodiment, the thermal shock treatment method for the resistive temperature sensor is implemented in the following manner:

[0066] The resistive temperature sensor is cooled from room temperature to a specified minimum temperature in the range of 4.2 to 100 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and held at the specified minimum temperature for a specified time in the range of 1 to 120 minutes.

[0067] After the low-temperature insulation is completed, the resistive temperature sensor is heated to the specified maximum temperature in the range of 250 to 350 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and then kept at the specified maximum temperature for a specified time in the range of 1 to 120 minutes.

[0068] After the high-temperature insulation period, the resistive temperature sensor is cooled to room temperature at a specified temperature change rate within the range of 0.05–60 K / s, completing one thermal shock cycle. This process is repeated until the specified number of cycles is completed. The number of cycles is set within the range of 5–50.

[0069] In the above embodiments of the present invention, the heat treatment method of thermal shock is used with a maximum temperature of 350K, which eliminates the need for high-temperature treatment, reduces the risk of oxygen contamination of the resistive material, and thus avoids the performance of the temperature sensor being damaged by oxygen contamination.

[0070] In some embodiments of the present invention, the key stability indicators of S200 include repeatability and reproducibility. Repeatability refers to the consistency between the results of multiple consecutive tests of the measured quantity at the same temperature, characterizing the stability of the temperature sensor over a period of time at the same temperature. Reproducibility refers to the consistency between the measurement results of the measured quantity at the same temperature before and after the change of test conditions, characterizing the stability of the temperature sensor under changed test conditions.

[0071] Specifically, in reproducibility testing, changing the test conditions can be achieved in any of the following ways: subjecting the temperature sensor to thermal shock treatment; or leaving the temperature sensor in a room temperature environment for a period of time.

[0072] For example, the temperature sensor is cooled from room temperature to a specified minimum temperature within the range of 4.2 to 100 K at a specified temperature change rate within the range of 0.05 to 60 K / s, and held at the specified minimum temperature for a specified time within the range of 1 to 120 minutes. After the low-temperature holding period, the temperature sensor is heated to a specified maximum temperature within the range of 250 to 350 K at a specified temperature change rate within the range of 0.05 to 60 K / s, and held at the specified maximum temperature for a specified time within the range of 1 to 120 minutes. After the high-temperature holding period, the temperature sensor is cooled back to room temperature at a specified temperature change rate within the range of 0.05 to 60 K / s, completing one thermal shock cycle. The above process is repeated until all specified cycles are completed, with the number of cycles set within the range of 5 to 50; alternatively, the temperature sensor is left to stand in a room temperature environment for 1 to 60 days.

[0073] The test conditions described above are consistent with those for thermal shock, essentially both involving thermal shock treatment of the sensor. While the thermal shock treatment in the previous steps aimed to improve sensor stability, this thermal shock treatment is used to test the sensor's reproducibility, specifically the temperature measurement shift before and after the thermal shock treatment.

[0074] Specifically, as mentioned above, there are two methods for testing the reproducibility of sensors: one is to test the reproducibility of the sensor before and after thermal shock treatment, and the other is to test the reproducibility of the sensor after a period of rest. The former characterizes the thermal cycling reproducibility of the sensor, while the latter characterizes the static reproducibility of the sensor. Either method can be chosen.

[0075] In other implementations, other methods can be used to perform reproducibility testing on the sensor, as long as the test conditions can be changed. When performing reproducibility testing on the sensor, two calibrations of the indicated value should be performed. Between the two calibrations, the test conditions for the indicated value calibration can be changed; this could be thermal shock or a period of rest.

[0076] In some embodiments of the present invention, in step S300, establishing the control relationship between thermal shock parameters and sensor stability indicators involves analyzing the control effect of various shock parameters on sensor stability through experimental results, thereby determining the ideal thermal shock parameters for improving stability. For example, based on different types of resistive temperature sensors and their application temperature ranges, parameters such as temperature change range, temperature change rate, holding time, and minimum temperature are adjusted over a wide range to establish the control relationship between these parameters and sensor stability, achieving controllable improvement in the stability of various resistive temperature sensors within a wide sensing temperature range.

[0077] In this embodiment of the invention, the stability of the resistive temperature sensor is improved by subjecting it to thermal shock under ideal shock parameters. This is achieved by releasing residual stress in the resistive material and stabilizing the crystal structure of the resistive material through thermal shock.

[0078] The method described in the above embodiments of the present invention has a wide range of applications and is applicable to resistive temperature sensors based on various resistive materials, such as pure metal materials like platinum, nickel, and copper; metal materials containing small amounts of dopants, such as rhodium-iron and platinum-cobalt; and semiconductor materials such as germanium, carbon glass, transition metal oxides, transition metal nitrides, and transition metal oxynitrides. It has strong universality. By establishing the control relationship between thermal shock parameters and sensor stability indicators, ideal thermal shock parameters that can significantly improve sensor stability can be extracted. By subjecting the sensor to thermal shock under these shock parameters, sensor stability optimization can be achieved efficiently.

[0079] In one specific embodiment, when performing thermal shock heat treatment on a resistive temperature sensor based on a transition metal nitride thin film, adjusting the temperature change range and the holding time at the lowest temperature to achieve controllable optimization of sensor stability includes the following steps:

[0080] S1. The repeatability of a resistance temperature sensor based on zirconium oxynitride thin film is tested with high precision before impact using a high-precision testing system. The high-precision testing system can be a water triple point, argon triple point, triple point system, or a device that can provide a high-stability temperature environment, such as a comprehensive physical property measurement system.

[0081] S2. By adjusting the temperature change range and the holding time at the lowest temperature, the resistive temperature sensor based on zirconium oxynitride thin film is subjected to thermal shock under different shock schemes, specifically including the following steps:

[0082] S21. The resistive temperature sensor based on zirconium oxynitride thin film is cooled from room temperature to the lowest temperature in the range of 4.2 to 100 K at a temperature change rate in the range of 0.05 to 60 K / s.

[0083] S22. Hold the resistive temperature sensor based on zirconium oxynitride thin film at the lowest temperature for a specified time within the range of 1 to 120 minutes;

[0084] S23. After the low-temperature insulation is completed, the resistive temperature sensor based on zirconium oxynitride thin film is heated from the lowest temperature to the room temperature at a temperature change rate in the range of 0.05 to 60 K / s.

[0085] S24. The resistive temperature sensor based on zirconium oxynitride thin film is kept at room temperature for a specified time within the range of 1 to 120 minutes to complete one cycle of thermal shock.

[0086] S25. Repeat the above process until all loops are completed. The number of loops should be set within the range of 5 to 50.

[0087] S26. With the temperature change rate, number of cycles, and high-temperature holding time fixed, and the maximum temperature fixed at room temperature, the minimum temperature is adjusted within the temperature range of 4.2 to 100K, and the low-temperature holding time is adjusted within the range of 1 to 120 minutes to form different new impact schemes, so that a new batch of resistive temperature sensors based on zirconium oxynitride thin film can be thermally shocked under different impact schemes.

[0088] S3. High-precision testing system is used to perform high-precision testing on the repeatability of a resistive temperature sensor based on zirconium oxynitride thin film after impact.

[0089] S4. Compare the repeatability of the resistive temperature sensor based on zirconium oxynitride thin film before impact and after impact under different impact schemes, and establish the control relationship between the two thermal shock parameters, temperature change range and holding time at the lowest temperature, and repeatability.

[0090] S5. Select the temperature change range that can significantly improve the stability of the sensor and the holding time at the lowest temperature as ideal thermal shock parameters. Perform thermal shock on the resistance temperature sensor based on zirconium oxynitride thin film under these ideal thermal shock parameters to make its repeatability controllable and optimized.

[0091] Reference Figure 2 The image shows the thermal shock process under different scenarios:

[0092] In Scheme 1: the temperature range is 4.2–300 K, the temperature change rate during the cooling process is 0.08 K / s, the low-temperature holding time is 60 min, the temperature change rate during the heating process is 0.13 K / s, the high-temperature holding time is 1 min, and the number of cycles is 20. Specific steps include:

[0093] The resistive temperature sensor based on zirconium oxynitride thin film was cooled from 300K to 4.2K at a temperature change rate of 0.08K / s and held at 4.2K for 60 minutes.

[0094] After the low-temperature insulation is completed, the resistive temperature sensor based on zirconium oxynitride film is heated to the maximum temperature of 300K at a temperature change rate of 0.13K / s, and held at 300K for 1 minute to complete one thermal shock cycle.

[0095] Repeat the above process and the above impact parameters until all 20 cycles are completed to complete the thermal shock treatment of the resistive temperature sensor.

[0096] In Scheme 2: the low-temperature holding time is adjusted to 1.5 min, while other impact parameters remain the same as in Scheme 1, including a temperature range of 4.2–300 K, a temperature change rate of 0.08 K / s during cooling, a temperature change rate of 0.13 K / s during heating, a high-temperature holding time of 1 min, and 20 cycles. Specific steps include:

[0097] The resistive temperature sensor based on zirconium oxynitride thin film was cooled from 300K to 4.2K at a temperature change rate of 0.08K / s and held at 4.2K for 1.5min.

[0098] After the low-temperature insulation is completed, the resistive temperature sensor based on zirconium oxynitride film is heated to the maximum temperature of 300K at a temperature change rate of 0.13K / s, and held at 300K for 1 minute to complete one thermal shock cycle.

[0099] Repeat the above process and the above impact parameters until all 20 cycles are completed to complete the thermal shock treatment of the resistive temperature sensor.

[0100] In Scheme 3: the temperature change range is adjusted to 77–300 K, while other impact parameters remain the same as in Scheme 2, including a temperature change rate of 0.08 K / s during cooling, a low-temperature holding time of 1.5 min, a temperature change rate of 0.13 K / s during heating, a high-temperature holding time of 1 min, and 20 cycles. Specific steps include:

[0101] The resistive temperature sensor based on zirconium oxynitride thin film was cooled from 300K to 77K at a temperature change rate of 0.08K / s and held at 77K for 1.5min.

[0102] After the low-temperature insulation is completed, the resistive temperature sensor based on zirconium oxynitride film is heated to the maximum temperature of 300K at a temperature change rate of 0.13K / s, and held at 300K for 1 minute to complete one thermal shock cycle.

[0103] Repeat the above process and the above impact parameters until all 20 cycles are completed, thus completing the thermal shock treatment of the resistive temperature sensor.

[0104] Reference Figure 3 The figure shows the repeatability test results of a zirconium oxynitride thin film-based resistive temperature sensor at 18.3 K before and after impact under different impact scenarios. The results in the figure indicate that the smaller temperature variation range of 77–300 K and the shorter holding time of 1.5 min in Scheme 3 can stably improve the stability of the temperature sensor and can be used as ideal thermal shock parameters for a zirconium oxynitride thin film-based resistive temperature sensor.

[0105] In another specific embodiment, when performing thermal shock heat treatment on a resistive temperature sensor based on a transition metal nitride thin film, adjusting the number of cycles and achieving controllable optimization of sensor stability includes the following steps:

[0106] S1. The repeatability of a resistive temperature sensor based on zirconium oxynitride thin film before impact is tested with high precision using a high-precision testing system.

[0107] S2. By adjusting the number of cycles, the resistive temperature sensor based on zirconium oxynitride thin film is subjected to thermal shock under different shock schemes, specifically including the following steps:

[0108] S21. The resistive temperature sensor based on zirconium oxynitride thin film is cooled from room temperature to the lowest temperature in the range of 4.2 to 100 K at a temperature change rate in the range of 0.05 to 60 K / s.

[0109] S22. Hold the resistive temperature sensor based on zirconium oxynitride thin film at the lowest temperature for a specified time within the range of 1 to 120 minutes;

[0110] S23. After the low-temperature insulation is completed, the resistive temperature sensor based on zirconium oxynitride thin film is heated from the lowest temperature to the room temperature at a temperature change rate in the range of 0.05 to 60 K / s.

[0111] S24. The resistive temperature sensor based on zirconium oxynitride thin film is kept at room temperature for a specified time within the range of 1 to 120 minutes to complete one cycle of thermal shock.

[0112] S25. Repeat the above process until all loops are completed. The number of loops should be set within the range of 5 to 50.

[0113] S26. With the temperature change rate, minimum temperature, low temperature holding time, and high temperature holding time fixed, and the maximum temperature fixed at room temperature, the number of cycles is adjusted within the range of 5 to 50 to form different new impact schemes, so that a new batch of resistive temperature sensors based on zirconium oxynitride thin film can be subjected to thermal shock under different impact schemes.

[0114] S3. High-precision testing system is used to perform high-precision testing on the repeatability of a resistive temperature sensor based on zirconium oxynitride thin film after impact.

[0115] S4. Compare the repeatability of the resistive temperature sensor based on zirconium oxynitride thin film before impact and after impact under different impact schemes, and establish the control relationship between the number of cycles and repeatability.

[0116] S5. Select the number of cycles that can significantly improve the stability of the sensor as the ideal thermal shock parameter, and subject the resistance temperature sensor based on zirconium oxynitride thin film to thermal shock under this ideal thermal shock parameter to make its repeatability controllable and optimized.

[0117] In this embodiment of the invention, a thermal shock treatment was performed with a temperature range of 77–300 K, a temperature change rate of 0.08 K / s during the cooling process, a low-temperature holding time of 1.5 min, a temperature change rate of 0.13 K / s during the heating process, a high-temperature holding time of 1 min, and 20 cycles. The repeatability of the resistance temperature sensor based on the zirconium oxynitride thin film at 18.3 K was improved by up to 17.6% compared to before the thermal shock treatment. The best repeatability after the thermal shock treatment reached 0.43 mK, indicating excellent stability.

[0118] This invention utilizes a thermal shock heat treatment method on a resistive temperature sensor to release the internal residual stress of the resistive material, thereby improving the electrical stability of the resistive material and optimizing the stability of the resistive temperature sensor based on the resistive material. This results in an ideal high-precision resistive temperature sensor, providing insights for high-precision temperature measurement technology.

[0119] Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art can make various modifications or variations within the scope of the claims, which do not affect the essence of the present invention. The above preferred features can be used in any combination without conflict.

Claims

1. A method for improving the stability of a resistive temperature sensor based on heat treatment, characterized in that, include: The resistive temperature sensor was subjected to multiple thermal shock treatments using different thermal shock parameters. The stability index of the resistive temperature sensor before and after the thermal shock treatment was tested, and the control relationship between the thermal shock parameter and the stability index was established. Based on the aforementioned control relationship, ideal thermal shock parameters that can improve the stability of the resistive temperature sensor are extracted. The resistive temperature sensor is subjected to thermal shock under the ideal shock parameters to improve the stability of the sensor and obtain the final optimized resistive temperature sensor.

2. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 1, characterized in that, The thermal shock parameters include: Temperature variation range, that is, the temperature difference between the highest and lowest temperatures that the resistive temperature sensor withstands during thermal shock. The rate of temperature change is the amount of temperature change per unit time of the resistive temperature sensor from the lowest temperature to the highest temperature in the temperature change range, or from the highest temperature to the lowest temperature in the temperature change range. The holding time is the duration for which the resistive temperature sensor maintains a constant temperature at the highest or lowest temperature. The number of cycles refers to the number of times the temperature change process from the starting temperature through the highest and lowest temperatures and back to the starting temperature is repeated. By adjusting one or more of the above thermal shock parameters, the resistive temperature sensor can be subjected to thermal shock under different shock schemes.

3. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 2, characterized in that, The process of subjecting the resistive temperature sensor to multiple thermal shock treatments using different thermal shock parameters includes: Set the thermal shock parameters; The resistive temperature sensor is cooled from room temperature to a specified minimum temperature at a specified first temperature change rate, and held at the specified minimum temperature for a first specified time. After the low-temperature insulation is completed, the resistive temperature sensor is heated to the specified maximum temperature at the second temperature change rate, and then kept at the specified maximum temperature for a second specified time. After the high-temperature insulation is completed, the resistive temperature sensor is cooled to room temperature at a third temperature change rate to complete a thermal shock cycle. Repeat the above process and the above impact parameters until all specified cycles are completed to complete the thermal shock treatment of the resistive temperature sensor. During the above thermal shock treatment, the first temperature change rate and the third temperature change rate are the same, the second temperature change rate is the same as or different from the first temperature change rate and the third temperature change rate, and the first specified time and the second specified time are the same as or different.

4. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 3, characterized in that, The multiple thermal shock treatments include: The resistive temperature sensor is cooled from room temperature to a specified minimum temperature in the range of 4.2 to 100 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and held at the specified minimum temperature for a specified time in the range of 1 to 120 minutes. After the low-temperature insulation is completed, the resistive temperature sensor is heated to a specified maximum temperature in the range of 250 to 350 K at a specified temperature change rate in the range of 0.05 to 60 K / s, and then kept at the specified maximum temperature for a specified time in the range of 1 to 120 minutes. After the high-temperature insulation is completed, the resistive temperature sensor is cooled to room temperature at a specified temperature change rate within the range of 0.05 to 60 K / s to complete one thermal shock cycle. Repeat the above process and the above impact parameters until the specified number of cycles is completed. The number of cycles is set in the range of 5 to 50.

5. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 1, characterized in that, The key stability indicators include: Repeatability refers to the consistency between the results of multiple consecutive tests conducted at the same temperature. Reproducibility refers to the consistency between the measurement results before and after the change of test conditions at the same temperature, under different test conditions.

6. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 5, characterized in that, The change of test conditions can be achieved in any of the following ways: - Perform thermal shock treatment on the resistive temperature sensor; - Let the resistive temperature sensor stand at room temperature for a period of time.

7. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 1, characterized in that, The stability of the resistive temperature sensor is improved by subjecting it to thermal shock under the ideal shock parameters. This is achieved by releasing the residual stress of the resistive material and stabilizing the crystal structure of the resistive material through thermal shock.

8. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 1, characterized in that, The resistive temperature sensor includes either a positive temperature coefficient of resistance (TCR) type or a negative temperature coefficient of resistance (NTR) type, and utilizes the conductivity characteristics of the resistive material's positive or negative temperature coefficient of resistance to achieve temperature sensing.

9. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 8, characterized in that, The positive resistance temperature coefficient type resistor material includes: One of the pure metallic materials: platinum, nickel, or copper; or, Any one of the following: rhodium-iron or platinum-cobalt metallic materials containing a small amount of dopant. The negative resistance temperature coefficient type resistor material includes: One of germanium, carbon glass, transition metal oxide, transition metal nitride, or transition metal nitride.

10. The method for improving the stability of a resistive temperature sensor based on heat treatment according to claim 1, characterized in that, The structure of the resistive temperature sensor includes any one of the following: thin film, thick film, wire-wound, and microbead.

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