Semiconductor device and method for monitoring semiconductor device

Abstract

The invention relates to a semiconductor device and a method for monitoring a semiconductor device. A semiconductor device and a method for operating a semiconductor device are disclosed. A semiconductor device is provided with: a plurality of semiconductor bodies (11, 12, 1n); a housing (3) in which the plurality of semiconductor bodies (11, 12) are arranged; and a sensor circuit (2) comprising a plurality of temperature sensors (21, 22, 2m). In each of the semiconductor bodies (11, 12, 1n), at least one of the temperature sensors (21, 22, 2m) is integrated. In addition, each of the temperature sensors (21, 22, 2m) is connected between the first pin (31) and the second pin (32) of the housing (3).

Description

Technical Field

[0001] This disclosure generally relates to a semiconductor device, and more particularly to a semiconductor device comprising a plurality of semiconductor bodies arranged in a common housing. Background Technology

[0002] Various types of semiconductor devices comprise several semiconductor bodies (dies) arranged in a common housing, with each semiconductor body having a semiconductor device integrated therein. An example of this type of semiconductor device is a transistor device, which comprises several transistors connected in parallel, with each transistor integrated in a separate chip. For example, the housing is a molded compound housing.

[0003] In each semiconductor device, overload conditions (such as overcurrent) can occur. Overload conditions can cause excessive heating of the semiconductor body integrating the semiconductor device. Therefore, overload conditions can be detected by monitoring the temperature of the semiconductor body. In a semiconductor device comprising several semiconductor bodies arranged in the same housing, a temperature sensor can be placed in each of the semiconductor bodies, and the temperature in each semiconductor body can be monitored individually. However, this requires the housing to provide monitoring pins for each temperature sensor in order to monitor the current or voltage supplied by each temperature sensor. However, this is space-consuming and expensive.

[0004] As an alternative, not every semiconductor body in the semiconductor body may include a temperature sensor, so that the temperature in those semiconductor bodies that do not include a temperature sensor is indirectly measured by temperature sensors in one or more other semiconductor bodies. However, this is less accurate.

[0005] It is necessary to monitor the occurrence of overload conditions in semiconductor devices, including several semiconductor bodies arranged in a common housing. Summary of the Invention

[0006] One example relates to a semiconductor device. The semiconductor device includes: a plurality of semiconductor bodies; a housing in which the plurality of semiconductor bodies are disposed; and sensor circuitry including a plurality of temperature sensors. In each of the semiconductor bodies, at least one temperature sensor is integrated, and each temperature sensor is connected between a first pin and a second pin of the housing.

[0007] Another example relates to a method for monitoring overload conditions in a semiconductor device. The semiconductor device includes: a plurality of semiconductor bodies; and sensor circuitry including a plurality of temperature sensors connected in parallel, wherein at least one temperature sensor is integrated in each of the semiconductor bodies. Monitoring overload conditions in the semiconductor device includes: driving a sensing current through the sensor circuitry; measuring a voltage across the sensor circuitry; and comparing the measured voltage with an overload condition threshold. Attached Figure Description

[0008] The following explanations are illustrated with reference to the accompanying drawings. The drawings are used to illustrate certain principles, thus showing only the aspects necessary for understanding these principles. The drawings are not necessarily drawn to scale. In the drawings, the same reference numerals indicate similar features.

[0009] Figure 1-3 The illustration shows different examples of semiconductor devices, each of which includes a plurality of semiconductor bodies arranged in a housing, and each semiconductor device includes a temperature sensor integrated in the semiconductor body and connected between the first and second pins of the housing.

[0010] Figure 4 includes Figure 4A and Figure 4B The illustration shows an example of a temperature sensor that includes several diodes connected in series.

[0011] Figure 5 and 6 The diagram illustrates different characteristic curves of a sensor device, which includes several temperature sensors connected between the first and second pins of the housing.

[0012] Figure 7 The diagram illustrates an example of an electronic circuit, which includes components based on... Figure 1-3 One of the examples shown in the diagram is a semiconductor device and a detection circuit; and

[0013] Figure 8 The diagram illustrates another example of an electronic circuit, an electronic circuit with... Figure 7 The difference is that it also includes transistors and control circuitry. Detailed Implementation

[0014] In the following detailed description, reference is made to the accompanying drawings. The drawings form part of the description and illustrate, for illustrative purposes, examples of how the invention can be used and implemented. It should be understood that, unless otherwise specifically indicated, features of the various embodiments described herein can be combined with each other.

[0015] Figure 1-3 The illustrations are schematic top views of a semiconductor device according to one example. The semiconductor device includes multiple semiconductor bodies. Figure 1The example shown in the diagram includes two semiconductor bodies 11 and 12, and Figure 2 and 3 The examples illustrated in the diagrams all include three semiconductor bodies 11, 12, and 1n. It should be noted that the semiconductor device is not limited to including two or three semiconductor bodies. Instead, the semiconductor device can be implemented with any number of more than two semiconductor bodies. According to one example, the number of semiconductor bodies in the semiconductor device is between 2 and 20, and more specifically, between 2 and 12.

[0016] Reference Figure 1-3 The semiconductor device also includes a sensor device 2 having multiple temperature sensors, wherein each of the semiconductor bodies 11, 12, 1n has at least one temperature sensor integrated therein. Figure 1 and 2 In the example shown in the diagram, exactly one temperature sensor 21, 22, 2m is integrated into each of the semiconductor bodies 11, 12, 1n. Figure 3 In the example illustrated, two semiconductor bodies 11, 1n have exactly one temperature sensor 21, 2m integrated therein, and a semiconductor body 12 has two temperature sensors 22, 23 integrated therein. It should be noted that having one or two temperature sensors integrated within a single semiconductor body is merely an example. Essentially, any number of temperature sensors can be integrated into each of the semiconductor bodies 11, 12, 1n. According to one example, the number of temperature sensors integrated into each of the semiconductor bodies 11, 12, 1n is between 1 and 4, and is independent of the number of temperature sensors integrated into the other semiconductor bodies. According to one example, each of the semiconductor bodies 11, 12, 1n arranged in the same housing 3 has exactly one temperature sensor integrated therein.

[0017] In addition, each of the temperature sensors 21, 22, 23, and 2m is connected between the first pin 31 and the second pin 32 of the housing 3, so that the temperature sensors 21, 22, 23, and 2m of the sensor device 2 are connected in parallel.

[0018] The housing 3 shown in the attached figure by the dashed line can be any type of housing suitable for housing the semiconductor bodies 11, 12, 1n and protecting them from external influences such as dust and moisture. For example, housing 3 is a molded compound housing.

[0019] The first and second pins 31 and 32 provide electrical access to the temperature sensors from outside the housing 3. That is, current or voltage can be applied to the temperature sensors 21, 22, and 2m disposed inside the housing 3 via the first and second pins 31 and 32. The electrical connection between the temperature sensors 21, 22, and 2m and the first and second pins 31 and 32 is only schematically illustrated. Figure 1-3 middle.

[0020] By connecting temperature sensors 21, 22, 23, and 2m to the same first and second pins 31 and 32, a low pin count can be achieved, independent of the number of temperature sensors included in the semiconductor device. However, overload conditions occurring in one of the semiconductor bodies 11, 12, and 1n and causing excessive heating in that semiconductor body 11, 12, or 1n can be detected with fairly high precision. This will be explained in further detail below.

[0021] According to one example, each temperature sensor includes at least one diode. Different examples of temperature sensors 20 including at least one diode are illustrated in... Figure 4A and 4B middle. Figure 4A and 4B The temperature sensor 20 shown in the diagram represents Figure 1-3 The temperature sensor shown in the diagram and explained above is any of the temperature sensors 21, 22, 23, and 2m.

[0022] Reference Figure 4A The temperature sensor 20 includes a diode 211. According to... Figure 4B In another example illustrated, the temperature sensor 20 includes several diodes 211-214 connected in series. Figure 4B In the example shown, four diodes are connected in series. However, this is just an example. Any number of diodes can be connected in series to form a temperature sensor. According to one example, the number of diodes connected in series is between 2 and 10.

[0023] As is well known, for a diode operating in forward bias mode at a given temperature, the current through the diode increases exponentially with increasing forward bias voltage. Furthermore, at a given forward bias voltage, the current through the diode increases exponentially with increasing temperature, and at a given current through the diode, the voltage across the diode decreases linearly with increasing temperature. Operating a diode as a temperature sensor may include: driving a current with a predefined current level through the diode and measuring the voltage across the diode. The voltage across the diode provides a measure of temperature and decreases with increasing temperature.

[0024] It should be noted that implementing temperature sensors 21, 22, 23, 2m as including at least one diode is merely an example. Any other type of electronics can be used as the temperature sensor element in temperature sensors 21, 22, 23, 2n, exhibiting a superlinear increase in current through the electronics as the temperature increases and when a predefined voltage is applied. For illustrative purposes only, it is assumed that temperature sensors 21, 22, 23, 2m are implemented as including one or more diodes. However, the explanation provided below applies to temperature sensors implemented using other types of sensor elements that exhibit a superlinear dependence of the current through the sensor element on temperature.

[0025] According to one example, the temperature sensors 21-2m of the temperature device 2 have at least approximately the same temperature characteristics. According to one example, this includes: when the same current is driven through each temperature sensor in the temperature device 2, the voltage across each temperature sensor is approximately the same. For example, temperature sensors with the same temperature characteristics can be obtained by connecting the same number of sensor elements (such as diodes) in series and by using sensor elements (such as diodes) with the same temperature characteristics.

[0026] Referring to the above, as the diode's temperature increases, the voltage across the diode caused by the constant current flowing through it decreases (linearly), while the current flowing through the diode caused by the constant forward bias voltage applied to it increases exponentially with increasing temperature. Using a temperature sensor including at least one diode, when a constant current is driven through the temperature sensor, the voltage drop across the temperature sensor decreases (linearly) with increasing temperature. The voltage drop across the sensor is approximately proportional to the number of diodes connected in series in the temperature sensor. Furthermore, using a temperature sensor including at least one diode, when a predefined voltage is applied across the temperature sensor and the temperature increases, the current through the temperature sensor increases exponentially.

[0027] The exponential dependence of the current through the temperature sensor on temperature has the effect that, in a temperature device 2 having several temperature sensors 21-2m connected in parallel, the temperature sensor with the highest temperature is driven to handle most of the current through the sensor device 2 and controls the total resistance of the sensor device 2. See below for reference. Figure 5 and 6 To explain this.

[0028] Figure 5Different curves are shown, each plotting the current Is through sensor device 2 connected to the first and second pins 31, 32 and the voltage Vs across sensor device 2 at the corresponding temperature. "Voltage Vs across sensor device 2" is the voltage between the first and second pins 31, 32. Figure 5 In the diagram, the current Is is plotted on a logarithmic scale, and the voltage Vs is plotted on a linear scale starting at zero.

[0029] Figure 5 The curves in the diagram relate to sensor device 2, which includes two temperature sensors arranged spaced apart from each other. According to one example, the two temperature sensors are arranged in different semiconductor bodies within the same housing.

[0030] exist Figure 5 In the figure, the relationship between the current Is in sensor device 2 and the voltage Vs across sensor device 2 is illustrated for different operating scenarios: (a) the first scenario represented by curve 111, in which both temperature sensors have the same first temperature T1; (b) the second scenario represented by curve 112, in which both temperature sensors have the same second temperature T2, which is higher than the first temperature T1; (c) the third scenario represented by curve 113, in which one of the two temperature sensors has the first temperature T1 and the other of the two temperature sensors has the second temperature T2; and (d) the fourth scenario represented by curve 114, in which one of the two temperature sensors has the second temperature T2 and the other of the two temperature sensors has a third temperature, which is higher than the first temperature T1 and lower than the second temperature T2.

[0031] The first temperature T1 is, for example, 25°C (298K), the second temperature T2 is, for example, 175°C (448K), and the third temperature T3 is, for example, 150°C (423K).

[0032] Given a current Is0, the voltage across sensor device 2 has a first voltage level Vs1 in the first scenario (curve 111), a second voltage level Vs2 lower than the first voltage level in the second scenario (curve 112), and a third voltage level V3 higher than the first voltage level Vs1 and lower than the second voltage level Vs2 in the third scenario (curve 113). Figure 5 It can be seen that the relationship between individual voltages Vs1, Vs2, and Vs3 is essentially the same over a fairly wide range of current Is.

[0033] Referring to the above, for a given current passing through a temperature sensor, the voltage across the temperature sensor decreases as the temperature increases. From Figure 6This can be seen in curves 111 and 112 shown in the figure. Curves 111 and 112 have been obtained for a sensor device comprising two temperature sensors having the same temperature characteristics, connected in parallel and operating at the same temperature, operating at a first temperature T1 in the scenario illustrated by curve 111 and operating at a second temperature T2 in the scenario illustrated by curve 112. Curves 111 and 112 obtained using a sensor device 2 with two temperature sensors connected in parallel are equally applicable to a single temperature sensor receiving 50% of the current Is0 driven through the sensor device 2.

[0034] Referring to the above, when a given voltage is applied to a temperature sensor, the current through the temperature sensor increases exponentially with increasing temperature. In other words, the resistance of the temperature sensor decreases exponentially with increasing temperature. The exponential increase in the current through a temperature sensor and the exponential decrease in its resistance at increasing temperature have the effect that, in a sensor device comprising a parallel circuit with two or more temperature sensors, the temperature sensor with the highest temperature controls the majority of the current driven into the sensor device and dominates the total resistance of the sensor device. By comparison... Figure 5 This can be seen in curves 112 and 113. Referring to the above, curve 113 represents a scenario where one of the two temperature sensors has a first temperature T1, such as 25°C, and the other of the two temperature sensors has a second temperature T2, such as 175°C. The voltage Vs3 obtained in the third scenario is very close to the voltage Vs2 obtained in the second scenario, where both temperature sensors have the second temperature T2, and the voltage Vs3 is much higher than the voltage Vs1 in the first scenario, where both temperature sensors have the first temperature T1.

[0035] Figure 6 The figure shows the voltage Vs across sensor device 2 when a given current Is0 flows through the sensor device. Figure 6 An example involving sensor device 2 includes two temperature sensors connected in parallel. Figure 6 The different curves 121-123 shown illustrate the voltage Vs across sensor device 2, depending on temperature T, for cases where one of the two temperature sensors has a higher temperature. Each curve in 121-123 illustrates the voltage Vs across temperature T for different temperature differences ΔT between the two temperature sensors. (i) Curve 121 represents the scenario where both temperature sensors have the same temperature (i.e., ΔT = 0); (ii) Curve 122 represents the scenario where the temperature difference is 5 K; and (iii) Curve 123 represents the scenario where the temperature difference is 25 K. Both temperature T and voltage Vs are... Figure 6 It is shown on a linear scale.

[0036] based on Figure 6 Compared to the conventional approach where the temperature sensor is only arranged in the first semiconductor body, the improvement achievable by connecting temperature sensors arranged in parallel in both the first and second semiconductor bodies is evident. In the conventional approach, the temperature is directly measured in the first semiconductor body using a temperature sensor, and the temperature is also measured by grounding the temperature sensor arranged in the first semiconductor body in the second semiconductor body.

[0037] For illustrative purposes, it is assumed that the temperature in each of the two semiconductor bodies should not exceed a predefined temperature T3, which is selected, for example, from a range between 150°C and 180°C. This temperature T3 is referred to below as the overload temperature.

[0038] For the purposes of explanation, it is further assumed that, due to the thermal resistance between the two semiconductor bodies, the rapid temperature increase caused by an overload condition in one of the semiconductor bodies results in a delayed temperature increase in the other semiconductor body, thus creating a temperature difference between the two semiconductor bodies during the transient phase (i.e., the operational phase in which the temperature of one of the semiconductor bodies increases). For the purposes of explanation, it is further assumed that the value ΔTo of this temperature difference caused by the thermal resistance between the semiconductor bodies during the transient phase is known. Therefore, when the temperature in one of the semiconductor bodies reaches temperature T3 due to the overload condition, the temperature in the other semiconductor body has already reached a lower temperature T3-ΔTo.

[0039] In conventional designs where the temperature sensor is integrated only in the first semiconductor body, it must be assumed that an overload condition has occurred in the second semiconductor body when the temperature in the first semiconductor body reaches T3-ΔTo. This fails to account for the fact that the operating conditions of the semiconductor devices integrated in the first semiconductor body may also cause the temperature in the first semiconductor body to reach the T3-ΔTo threshold without an overload condition occurring in the second semiconductor body. Therefore, an overload condition may be falsely detected. The higher the temperature difference ΔTo is considered, the higher the probability that the temperature in the first semiconductor body reaches the T3-ΔTo threshold without an overload condition occurring in the second semiconductor body. If, for example, ΔTo = 25K and the temperature in each of the two semiconductor bodies should not exceed 150°C, then an overload condition will be detected when the temperature in the first semiconductor body reaches 125°C (=150°C-25K).

[0040] Reference Figure 6When temperature sensors are integrated into each of two semiconductor bodies and connected in parallel, the voltage Vs across the sensor device with the two temperature sensors is equal to Vs3 when the temperature of one semiconductor body is equal to T3 and the temperature of the other semiconductor body is 25K lower. This can be seen from curve 123, which illustrates the voltage Vs depending on the temperature of the hotter semiconductor body and when the temperature difference ΔT is 25K. For illustrative purposes, it is assumed that Vs3 is at an overload threshold, where an overload condition is detected when the voltage Vs reaches or falls below the overload threshold Vs3.

[0041] Referring to the above, when the temperature in one of the two semiconductor bodies is equal to T3 and the temperature in the other semiconductor body is equal to T3-25K, the voltage Vs can reach the overload threshold. Therefore, in the case where the operating scenario of one semiconductor body being at a temperature of T3 and the other semiconductor body being at a temperature of T3-25K causes the voltage Vs to equal the overload threshold Vs3, the overload condition is correctly detected.

[0042] However, refer to Figure 6 When both semiconductor substrates have the same temperature T4, the overload condition threshold Vs3 may still be reached, where T4 is lower than T3 but higher than T3-25K. In this operating scenario, neither semiconductor substrate reaches the overload temperature T3, thus the overload condition is incorrectly detected. Figure 6 In the example shown in the diagram, for instance, T3 = 150°C and T4 = 141°C.

[0043] Compared to the conventional approach that uses only one temperature sensor in one of the two semiconductor bodies, the difference between the overload condition threshold T3 and the temperature T4 at which the overload condition is falsely detected is only 9K (150℃-141℃), compared to 25K (150℃-125℃) in the conventional approach. Therefore, the probability of falsely detecting an overload condition is significantly lower when using a sensor device that includes several temperature sensors connected in parallel compared to the conventional approach that uses only one temperature sensor in one of the semiconductor bodies.

[0044] Reference Figure 7The semiconductor device may further include a detection circuit 4 connected to first and second pins 31, 32 and configured to detect an overload condition. According to one example, to detect an overload condition, the detection circuit 4 is configured to drive a sensing current Is having a predefined current level to a sensor device 2 via the first and second pins 31, 32, the sensor device 2 having temperature sensors 21, 22 connected in parallel. Additionally, the detection circuit 4 is configured to sense a voltage Vs between the first and second pins 31, 32, compare the voltage Vs with a predefined overload condition threshold, and detect an overload condition when the voltage Vs reaches or falls below the overload condition threshold.

[0045] Upon detecting an overload condition, detection circuit 4 can output an overload signal indicating the occurrence of the overload condition. A controller (not shown) configured to control the operation of semiconductor devices arranged in the semiconductor bodies 11, 12 of the semiconductor device can receive the overload signal and take appropriate measures, such as disabling one or more semiconductor devices. According to one example, detection circuit 4 is integrated into the controller used to control the operation of the semiconductor devices.

[0046] exist Figure 7 In the example illustrated, sensor device 2 includes two temperature sensors 21, 22, each of which is integrated into a corresponding semiconductor body 11, 12. However, this is merely an example. The operating principle of detection circuit 4 is independent of the specific implementation of sensor device 2 and is therefore applicable to any sensor device described above in this document.

[0047] Referring to the above, at least one semiconductor device can be integrated into each semiconductor body arranged in the housing 3. Figure 8 As an example shown in the diagram, transistor devices 61-64 are integrated in each of the semiconductor bodies 11-14. The transistor devices are schematically represented by circuit symbols. This is for illustrative purposes only. Figure 8 The circuit symbol shown in the diagram represents a transistor device implemented as an N-type enhancement MOSFET. However, this is merely an example. Any type of transistor device can be implemented in the semiconductor bodies 11-14. This includes other types of MOSFETs besides N-type enhancement MOSFETs, JFETs, IGBTs, bipolar junction transistors (BJTs), or HEMTs.

[0048] As an example, a transistor device is a silicon carbide (SiC) device.

[0049] exist Figure 8In the example illustrated, the semiconductor device includes four semiconductor bodies 11-14, each of which has a transistor device 61-64 integrated therein. However, implementing a semiconductor device with four transistor devices 61-64 is merely an example. A semiconductor device may include any number of semiconductor bodies, each having at least one transistor device integrated therein. According to one example, the semiconductor device includes 2 to 10 semiconductor bodies, each having a transistor device integrated therein.

[0050] Based on an example, such as Figure 8 As shown, transistor devices are connected in parallel. This includes: a first load path node of an individual transistor device being connected to a first load path pin 33 of the housing 3; a second load path node of an individual transistor device being connected to a second load path pin 34 of the housing 3; and a control node of the transistor device being connected to a control pin 35. In the case where the transistor device is a MOSFET... Figure 8 In the example shown in the diagram, the first load path node is the drain node, the second load path node is the source node, and the control node is the gate node of the MOSFET.

[0051] Control circuit 5 is configured to control the operation of the parallel-connected transistor devices 61-64. According to one example, the transistor devices are voltage-controlled transistor devices, such as MOSFETs, JFETs, or IGBTs, which turn on or off based on a voltage applied between one of the control node and the load path node. For example, a MOSFET or JFET turns on or off based on a voltage applied between its gate node and source node.

[0052] In this example, such as Figure 8 As shown, control circuit 5 is connected to control pin 35 and second load path pin 34, and is configured to control the operation of parallel-connected transistor devices 61-64 by applying a suitable drive voltage (gate-source voltage) between control pin 35 and second load path pin 34. According to one example, the transistor device is in an on state (conducting state) when the drive voltage is higher than the threshold voltage of the transistor device, and in an off state (blocking state) when the drive voltage is lower than the threshold voltage.

[0053] Reference Figure 8Temperature sensors 21-24 are integrated in each of the semiconductor bodies 11-14. Temperature sensors 21-24 are connected in parallel and connected to first and second pins 31, 32, which are connected to detection circuit 4. According to one example, detection circuit 4 is integrated into control circuit 5. According to one example, control circuit 5 is configured to disconnect transistor devices 61-64 when detection circuit 4 detects an overload condition by monitoring voltage Vs and comparing voltage Vs with an overload condition threshold.

[0054] In the example explained above, at least one temperature sensor is integrated in each of the semiconductor bodies within the semiconductor device. According to another example (not shown), the semiconductor device includes at least two semiconductor bodies, each having at least one temperature sensor integrated therein, wherein the temperature sensors are connected in parallel. Additionally, the semiconductor device includes at least one further semiconductor body that does not have a temperature sensor integrated therein. In this example, the temperature in the semiconductor body without an integrated temperature sensor is indirectly measured via a sensor device comprising two or more temperature sensors connected in parallel and connected to first and second pins.

[0055] Below, refer to the numbered examples to briefly summarize some of the aspects explained above.

[0056] Example 1. A semiconductor device includes: a plurality of semiconductor bodies; a housing in which the plurality of semiconductor bodies are disposed; and a sensor circuit including a plurality of temperature sensors, wherein at least one temperature sensor is integrated in each of the semiconductor bodies, and wherein each temperature sensor is connected between a first pin and a second pin of the housing.

[0057] Example 2. The semiconductor device as described in Example 1 further includes a detection circuit configured to: drive current through a sensor circuit via first and second pins; sense the voltage between the first and second pins; and monitor an overload condition for the semiconductor device based on the sensed voltage between the first and second pins.

[0058] Example 3. A semiconductor device as described in Example 2, wherein a detection circuit for monitoring overload conditions of the semiconductor device is configured to: compare a sensed voltage between a first and a second pin with an overload condition threshold; and detect an overload condition when the sensed voltage satisfies a predefined condition regarding the overload condition threshold.

[0059] Example 4. The semiconductor device as described in Example 3, wherein the sensed voltage satisfies the predefined condition when the sensed voltage is equal to or below an overload condition threshold.

[0060] Example 5. A semiconductor device as described in any of Examples 1 to 4, wherein the temperature sensors have at least approximately the same temperature characteristics.

[0061] Example 6. A semiconductor device as described in any of Examples 1 to 5, wherein each temperature sensor in the temperature sensor includes at least one sensor element that, at a given voltage applied to the sensor element, has a superlinear dependence of the current through the temperature sensor on the temperature.

[0062] Example 7. A semiconductor device as described in Example 6, wherein the sensor element is a diode.

[0063] Example 8. A semiconductor device as described in Example 7, wherein each temperature sensor in the temperature sensor includes a plurality of diodes connected in series.

[0064] Example 9. The semiconductor device as described in any of the preceding examples further includes: a semiconductor device integrated in each of the semiconductor bodies, wherein each of the semiconductor devices is connected to at least one additional pin other than the first and second pins.

[0065] Example 10. A semiconductor device as described in Example 9, wherein each semiconductor device is a transistor device.

[0066] Example 11. A semiconductor device as described in Example 10, wherein the at least one additional pin includes a first load path pin, a second load path pin, and a control pin, and wherein each transistor device in the transistor device includes a first load path node connected to the first load path pin, a second load path node connected to the second load path pin, and a control node connected to the control pin.

[0067] Example 12. A semiconductor device as described in Example 10 or 11, wherein the transistor device is a MOSFET or a JFET.

[0068] Example 13. A semiconductor device as described in any of the preceding examples, wherein the semiconductor body is a silicon carbide (SiC) semiconductor body.

[0069] Example 14. A method comprising: monitoring an overload condition for a semiconductor device, wherein the semiconductor device includes: a plurality of semiconductor bodies; and sensor circuitry including a plurality of temperature sensors connected in parallel, wherein at least one of the temperature sensors is integrated in each of the semiconductor bodies, and wherein monitoring an overload condition for the semiconductor device includes: driving a sensing current through the sensor circuitry; measuring a voltage across the sensor circuitry; and comparing the measured voltage with an overload condition threshold.

[0070] Example 15. The method as described in Example 14, wherein the semiconductor device further includes a housing in which the plurality of semiconductor bodies are arranged, and wherein each of the temperature sensors is connected between a first pin and a second pin of the housing.

[0071] Example 16. The method as described in Example 14 or 15, wherein monitoring overload conditions for a semiconductor device includes: comparing a sensed voltage between a first and a second pin with an overload condition threshold; and detecting an overload condition when the sensed voltage meets a predefined condition regarding the overload condition threshold.

[0072] Example 17. The method as described in Example 16, wherein the sensed voltage satisfies the predefined condition when the sensed voltage is equal to or below the overload condition threshold.

[0073] Example 18. The method described in any of Examples 14 to 17, wherein the temperature sensors have at least approximately the same temperature characteristics.

[0074] Example 19. The method as described in any of Examples 14 to 18, wherein each temperature sensor in the temperature sensor includes at least one sensor element, which, at a given voltage applied to the sensor element, has a superlinear dependence of the current through the temperature sensor on the temperature.

Claims

1. A semiconductor device, comprising: Multiple semiconductor bodies (11, 12, 1n); The housing (3) in which the plurality of semiconductor bodies (11, 12) are arranged; and The sensor circuit (2) includes multiple temperature sensors (21, 22, 2m). In each of the semiconductor bodies (11, 12, 1n), at least one of the temperature sensors (21, 22, 2m) is integrated, and Each of the temperature sensors (21, 22, 2m) is connected between the first pin (31) and the second pin (32) of the housing (3).

2. The semiconductor device of claim 1, further comprising a detection circuit (4), said detection circuit (4) being configured to: The driving current (Is) passes through the sensor circuit (2) via the first and second pins (31, 32); Sensing the voltage (Vs) between the first and second pins (31, 32); and Overload conditions of the semiconductor device are monitored based on the voltage sensed between the first and second pins (31, 32).

3. The semiconductor device as claimed in claim 2, The detection circuit (4) for monitoring the overload condition of the semiconductor device is configured as follows: The sensed voltage (Vs) between the first and second pins (31, 32) is compared with an overload condition threshold; and An overload condition is detected when the sensed voltage (Vs) meets a predefined condition regarding the overload condition threshold.

4. The semiconductor device as claimed in claim 3, When the sensed voltage (Vs) is equal to or lower than the overload condition threshold, the sensed voltage (Vs) satisfies the predefined condition.

5. The semiconductor device as claimed in any one of claims 1 to 4, The temperature sensors (21, 22, 2m) have at least approximately the same temperature characteristics.

6. The semiconductor device as claimed in any one of claims 1 to 5, Each of the temperature sensors (21, 22, 2m) includes at least one sensor element, which, at a given voltage applied to the sensor element, has a superlinear dependence of the current through the temperature sensor on the temperature.

7. The semiconductor device as claimed in claim 6, The sensor element described therein is a diode.

8. The semiconductor device as claimed in claim 7, Each of the temperature sensors (21, 22, 2m) includes multiple diodes (211-214) connected in series.

9. The semiconductor device as claimed in any of the preceding claims, further comprising: Semiconductor devices (61-64) are integrated in each semiconductor body within semiconductor bodies (1, 2). Each of the semiconductor devices (61-64) is connected to at least one additional pin (33, 34, 35) other than the first and second pins (31, 32).

10. The semiconductor device as claimed in claim 9, Each of the semiconductor devices (61-64) is a transistor device.

11. The semiconductor device as claimed in claim 10, The at least one additional pin includes a first load path pin (33), a second load path pin (34), and a control pin (35), and Each of the transistor devices (61-64) includes a first load path node connected to the first load path pin (33), a second load path node connected to the second load path pin (34), and a control node connected to the control pin (35).

12. The semiconductor device as claimed in claim 10 or 11, The transistor device mentioned therein is a MOSFET or a JFET.

13. A method comprising: For monitoring overload conditions in semiconductor devices, The semiconductor device includes: Multiple semiconductor bodies (11, 12, 1n); and The sensor circuit (2) includes a plurality of temperature sensors (21, 22, 2m) connected in parallel, wherein at least one of the temperature sensors (21, 22, 2m) is integrated in each of the semiconductor bodies (11, 12, 1n), and Monitoring the overload condition of the semiconductor device includes: The driving sensing current (Is) passes through the sensor circuit (2); Measure the voltage (Vs) across the sensor circuit (2); and The measured voltage (Vs) is compared with the overload condition threshold.

14. The method as described in claim 13, The semiconductor device further includes a housing (3), in which the plurality of semiconductor bodies (11, 12, 1n) are arranged, and Each of the temperature sensors (21, 22, 2m) is connected between the first pin (31) and the second pin (32) of the housing.

15. The method of claim 13 or 14, wherein monitoring the overload condition for the semiconductor device comprises: The sensed voltage (Vs) between the first and second pins (31, 32) is compared with an overload condition threshold. and An overload condition is detected when the sensed voltage (Vs) meets a predefined condition regarding the overload condition threshold.

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