Laser and preparation method

Abstract

The embodiment of the invention discloses a laser device and a preparation method, the laser device comprises a laser device body, a connecting piece and a deformation compensation module, the deformation compensation module is connected to a grating of the laser device body through the connecting piece, and based on this, in the use process of the laser device, deformation is generated through heating or cooling of the deformation compensation module; and then a mechanical linkage design is formed by using a connecting piece, so that the position of the grating can be adjusted, the resonant cavity length of the laser can be adjusted, self-adjustment of the cavity length of the laser can be realized, wavelength stability passive control is realized, power consumption and cost are reduced, and a temperature control system is effectively simplified. And meanwhile, wavelength shift caused by temperature change of the semiconductor laser in a working state can be effectively adjusted, the stability of the wavelength of the semiconductor laser is maintained, and a thermoelectric refrigerating unit in the traditional technology is replaced to meet the miniaturization requirement of the LD laser.

Description

Technical Field

[0001] This application relates to the field of semiconductor laser technology, and more particularly to a laser and its fabrication method. Background Technology

[0002] Semiconductor lasers (LDs) generate heat during operation, causing changes in the resonant cavity length due to thermal expansion, which in turn leads to output wavelength drift. Traditional solutions rely on thermoelectric coolers (TECs) and temperature control circuits, but these suffer from high power consumption, large size, and high cost. While existing technologies have attempted thermal compensation using materials with negative thermal expansion, these are mostly limited by single material properties, resulting in limited compensation effects and failing to meet the miniaturization requirements of LD lasers. Summary of the Invention

[0003] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This part of the invention is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art or related art.

[0005] Therefore, a first aspect of the present invention provides a laser.

[0006] A second aspect of the present invention provides a method for fabricating a laser.

[0007] In view of the above, a laser is provided according to a first aspect of the embodiments of this application, comprising:

[0008] A laser body, the laser body including an active region and a grating disposed on the active region;

[0009] A connector, one end of which is connected to the grating;

[0010] A deformation compensation module, wherein the other end of the connector is connected to the grating;

[0011] The deformation compensation module is used to move the grating through the connector in the event of temperature changes, so as to adjust the resonant cavity length of the laser.

[0012] In one feasible implementation, the deformation compensation module includes:

[0013] A negative thermal expansion layer, said negative thermal expansion layer being made of a negative thermal expansion material;

[0014] A shape memory alloy layer, wherein the shape memory alloy layer is made of a shape memory alloy material;

[0015] The negative thermal expansion layer is disposed on the shape memory alloy layer, and at least one of the negative thermal expansion layer and the shape memory alloy layer is connected to the connector.

[0016] In one feasible implementation, the material used to prepare the negative thermal expansion layer includes: ZrW2O8 and / or HfW2O8;

[0017] The materials used to prepare the shape memory alloy layer include: copper-aluminum-nickel alloy or nickel-titanium alloy; and / or

[0018] The thickness of the negative thermal expansion layer is 10 μm to 20 μm;

[0019] The thickness of the shape memory alloy layer is 5 to 10 μm; and / or

[0020] The deformation temperature of the shape memory alloy layer is 20°C to 30°C.

[0021] In one feasible implementation, the deformation compensation module further includes:

[0022] A transition layer is disposed between the negative thermal expansion layer and the shape memory alloy layer to improve the connection strength between the negative thermal expansion layer and the shape memory alloy layer.

[0023] In one feasible implementation, the connector is beam-shaped, and the angle between the connector and the active region is 10° to 20°; and / or

[0024] The length of the connector is 170 μm to 220 μm; and / or

[0025] The width-to-height ratio of the connector is 0.2 to 0.5; and / or

[0026] The materials used to fabricate the connectors include single-crystal silicon or silicon nitride; and / or

[0027] There are at least two connectors.

[0028] In one feasible implementation, the laser further includes: an encapsulation layer covering the laser body, the connector, and the deformation compensation module;

[0029] A support body is arranged on one side of the laser body, and the deformation compensation module is connected to the support body.

[0030] In one feasible implementation, the laser further includes:

[0031] An anti-reflective coating is disposed on the surface of the encapsulation layer; and / or

[0032] Humidity barrier filler, wherein the humidity barrier filler is filled within the encapsulation layer; and / or

[0033] The materials used to prepare the encapsulation layer include AlN, Si3N4, or SiO2; and / or

[0034] A semiconductor substrate, wherein the active region is disposed on the semiconductor substrate.

[0035] According to a second aspect of the embodiments of this application, a method for fabricating a laser is provided, for fabricating a laser as described in any of the above-mentioned technical solutions, the method comprising:

[0036] Prepare the deformation compensation module;

[0037] Prepare a connector for connection to the deformation compensation module;

[0038] A laser body is provided, and the deformation compensation module and the connector are integrated into the laser body.

[0039] In one feasible implementation, the step of preparing the deformation compensation module includes:

[0040] Provide substrate;

[0041] A negative thermal expansion material layer and a shape memory alloy layer were successively prepared on a substrate using thin film deposition technology;

[0042] The deformation compensation module is formed using photolithography and etching processes; and / or

[0043] The steps for preparing the connector for connection with the deformation compensation module include:

[0044] A bonding material layer is deposited on the substrate;

[0045] The patterning process is completed using photolithography and etching, and then the connecting material layer is released using sacrificial layer technology to form the connector; and / or

[0046] The step of providing a laser body and integrating the deformation compensation module and the connector into the laser body includes:

[0047] The laser body is provided, and a bonding material is coated on the contact surface between the connector and the grating;

[0048] Bonding is performed in a vacuum or inert gas environment to integrate the deformation compensation module and the connector into the laser body.

[0049] In one feasible implementation, the laser further includes:

[0050] A transparent encapsulation material with a thickness not exceeding 50 μm is applied to the laser body, the deformation compensation module, and the connector, and a humidity barrier material is mixed into the transparent encapsulation material to form an encapsulation layer;

[0051] An anti-reflective coating is provided on the encapsulation layer;

[0052] The encapsulation layer and the anti-reflective coating are cured.

[0053] Compared with the prior art, the present invention has at least the following beneficial effects:

[0054] The laser provided in this application includes a laser body, a connector, and a deformation compensation module. The deformation compensation module is connected to the grating of the laser body through the connector. Based on this, during the use of the laser, the deformation compensation module deforms due to heating or cooling. Then, the mechanical linkage design formed by the connector can adjust the position of the grating, thereby adjusting the resonant cavity length of the laser. This enables self-adjustment of the laser cavity length, achieving passive control of wavelength stability, reducing power consumption and cost, effectively simplifying the temperature control system, and effectively adjusting the wavelength shift caused by temperature changes in the semiconductor laser during operation, maintaining the stability of the semiconductor laser wavelength, and replacing the thermoelectric cooler in traditional technology to meet the miniaturization requirements of LD lasers.

[0055] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0056] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0057] Figure 1 A schematic structural diagram of a laser according to an embodiment of this application;

[0058] Figure 2 Another schematic structural diagram of a laser according to one embodiment of this application;

[0059] Figure 3 A schematic structural diagram of a laser deformation compensation module according to an embodiment of this application;

[0060] Figure 4A schematic diagram illustrating the working principle of a laser during heating, according to one embodiment of this application;

[0061] Figure 5 A schematic diagram illustrating the working principle of a laser during cooling, according to one embodiment of this application;

[0062] Figure 6 A schematic flowchart illustrating the steps of a laser fabrication method according to an embodiment of this application.

[0063] in, Figures 1 to 5 The correspondence between the reference numerals and component names in the attached drawings is as follows:

[0064] 110 Laser body, 120 Connector, 130 Deformation compensation module, 140 Support body, 150 Encapsulation layer;

[0065] 111 Wire Zone, 112 Grating, 113 Semiconductor Base;

[0066] 131 Negative thermal expansion layer, 132 Shape memory alloy layer. Detailed Implementation

[0067] The following description provides numerous specific details to offer a more thorough understanding of the technical solutions provided by this invention. However, it will be apparent to those skilled in the art that the technical solutions provided by this invention can be implemented without one or more of these details.

[0068] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of exemplary embodiments according to the invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms “comprising” and / or “including” are used in this specification, they indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof.

[0069] Exemplary embodiments according to the present invention will now be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. It should be understood that these embodiments are provided so that the disclosure of the invention is thorough and complete, and that the concept of these exemplary embodiments is fully conveyed to those skilled in the art.

[0070] like Figures 1 to 5As shown, a laser is provided according to a first aspect of the embodiments of this application, comprising: a laser body 110, the laser body 110 including an active region 111 and a grating 112 disposed on the active region 111; a connector 120, one end of the connector 120 being connected to the grating 112; and a deformation compensation module 130, the other end of the connector 120 being connected to the grating 112; wherein the deformation compensation module 130 is used to drive the grating 112 to move through the connector 120 under temperature changes, so as to adjust the resonant cavity length of the laser.

[0071] The laser provided in this application includes a laser body 110, a connector 120, and a deformation compensation module 130. The deformation compensation module 130 is connected to the grating 112 of the laser body 110 through the connector 120. Based on this, during the use of the laser, the deformation compensation module 130 deforms due to heating or cooling. Then, the connector 120 forms a mechanical linkage design, which can adjust the position of the grating 112, thereby adjusting the resonant cavity length of the laser. This enables self-adjustment of the laser cavity length, passive control of wavelength stability, reduced power consumption and cost, and effectively simplifies the temperature control system. At the same time, it can effectively adjust the wavelength shift caused by temperature changes in the semiconductor laser during operation, maintain the stability of the semiconductor laser wavelength, and replace the thermoelectric cooler in the traditional technology to meet the miniaturization requirements of LD lasers.

[0072] In one feasible implementation, the deformation compensation module 130 includes: a negative thermal expansion layer 131, which is made of a negative thermal expansion material; and a shape memory alloy layer 132, which is made of a shape memory alloy material; wherein the negative thermal expansion layer 131 is disposed on the shape memory alloy layer 132, and at least one of the negative thermal expansion layer 131 and the shape memory alloy layer 132 is connected to the connector 120.

[0073] like Figure 4 As shown, where Figure 4The direction of the middle arrow indicates the displacement direction. In this technical solution, a specific design of the deformation compensation module 130 is further provided. The deformation compensation module 130 may include a negative pressure expansion layer and a shape memory alloy layer 132. Based on this, during laser operation, when the laser shows a heating trend, the negative thermal expansion layer 131 contracts as the temperature rises, generating a tensile force towards the active region 111. Meanwhile, the shape memory alloy layer 132 undergoes bending deformation as its temperature rises, with its free end bending away from the active region 111, generating a thrust in the direction away from the active region 111. During this process, the negative thermal expansion layer 132... The deformation of 31 is dominant, and the deformation compensation module 130 tends to move towards the active region 111. In this case, when the compensation module moves towards the active region 111, the connector 120 will pull the grating 112 towards the active region 111. The connector 120 will be slightly bent due to the pulling force of the deformation compensation module 130. The deformation direction is consistent with the moving direction of the thermal compensation module. The grating 112 is pulled by the connector 120 towards the active region 111. The cavity length of the compensation resonant cavity increases due to thermal expansion, which shortens the cavity length and stabilizes the laser wavelength.

[0074] like Figure 5 As shown, where Figure 5 The direction of the middle arrow indicates the displacement direction. When the laser is cooling down, the negative thermal expansion layer 131 expands due to the temperature decrease. The negative thermal expansion layer 131 generates a thrust away from the active region 111. At the same time, the shape memory alloy layer 132 tends to return to its original shape as the temperature decreases, and the free end rebounds towards the side closer to the active region 111, generating a pull towards the active region 111. During this process, the deformation of the negative thermal expansion layer 131 is dominant, and the deformation compensation module 130 as a whole moves away from the active region 111. In this case, when the compensation module moves away from the active region 111, the connector 120 will pull the grating 112 away from the active region 111. The connector 120 will be slightly bent due to the tension of the deformation compensation module 130. The deformation direction is consistent with the moving direction of the thermal compensation module. The grating 112 is pulled away from the active region 111 by the connector 120. The cavity length of the compensation resonant cavity is shortened due to the cold shrinkage, which increases the cavity length and stabilizes the laser wavelength.

[0075] Based on this, the laser provided in this application embodiment achieves an automatic adjustment function that is highly sensitive to temperature fluctuations and requires no external power supply. This design is particularly suitable for distributed feedback (DFB) semiconductor lasers. By employing a miniature mechanical structure—connector 120—as a linkage device, the deformation compensation module 130 is precisely connected to the grating 112, ensuring accurate transmission of minute displacements. This achieves zero-power temperature control, eliminating the need for an additional thermoelectric cooler (TEC) or temperature control circuit, significantly reducing energy consumption and cost. Furthermore, due to its simple and robust mechanical construction, this design also exhibits good reliability and a long service life.

[0076] In one feasible implementation, the material used to prepare the negative thermal expansion layer 131 includes ZrW2O8 and / or HfW2O8.

[0077] In this technical solution, a material for preparing the negative thermal expansion layer 131 is further provided. By selecting ZrW2O8, the negative thermal expansion layer 131 can possess negative thermal expansion characteristics, isotropic thermal contraction, wide temperature range stability, and structural disorder correlation, so that the negative thermal expansion layer 131 can exhibit a negative thermal expansion effect in a wide temperature range (from near absolute zero to 1050K).

[0078] This technical solution further provides materials for preparing the negative thermal expansion layer 131. By selecting HfW2O8, the negative thermal expansion layer 131 can possess negative thermal expansion characteristics, phase transformation characteristics, and diverse preparation processes. HfW2O8 can be prepared by methods such as solid-state reaction and laser sintering. For example, using analytically pure HfO2 and WO3 as raw materials, cubic phase HfW2O8 ceramics can be obtained by sintering at 1200℃ for 6 hours using a solid-state reaction method followed by high-temperature quenching. This setup facilitates the preparation of the negative thermal expansion layer 131.

[0079] In one feasible implementation, the material used to prepare the shape memory alloy layer 132 includes: a copper-aluminum-nickel alloy or a nickel-titanium alloy.

[0080] In this technical solution, the material of the prepared shape memory alloy layer 132 is further provided. The shape memory alloy layer 132 can be made of copper-aluminum-nickel alloy material. The phase transition point of copper-aluminum-nickel shape memory alloy can be adjusted in the range of -100 to 300℃, which increases the applicability of deformation compensation module 130. At the same time, compared with some other shape memory alloys, copper-aluminum-nickel shape memory alloy has a lower cost, which can reduce the manufacturing cost of laser.

[0081] In this technical solution, the material of the prepared shape memory alloy layer 132 is further provided. The shape memory alloy layer 132 can be made of nickel-titanium alloy material. Nickel-titanium alloy exhibits superelasticity within a certain temperature range and can automatically recover large deformations when unloaded. Nickel-titanium alloy has the characteristics of high strength and lightweight, and can maintain the lightweight of the device while providing sufficient strength. Based on this, the service life of the laser can be improved.

[0082] In one feasible implementation, the thickness of the negative thermal expansion layer 131 is 10 μm to 20 μm; the thickness of the shape memory alloy layer 132 is 5 to 10 μm. This configuration facilitates control over the deformation adjustment range of the deformation compensation module 130, enabling more accurate adjustment of the laser's resonant cavity length.

[0083] In one feasible implementation, the deformation temperature of the shape memory alloy layer 132 is 20°C to 30°C. This setting can expand the application scenarios of the laser.

[0084] In one feasible implementation, the deformation compensation module 130 further includes a transition layer disposed between the negative thermal expansion layer 131 and the shape memory alloy layer 132 to improve the connection strength between the negative thermal expansion layer 131 and the shape memory alloy layer 132.

[0085] In this technical solution, in addition to the negative thermal expansion layer 131 and the shape memory alloy layer 132, the deformation compensation module 130 may also include a transition layer. Based on this, the interface bonding strength between the negative thermal expansion layer 131 and the shape memory alloy layer 132 can be improved. By designing the thickness of the negative thermal expansion material layer to vary in a gradient, the linearity of thermal compensation can be optimized, which can further improve the adjustment effect of the resonant cavity length of the laser.

[0086] In some examples, the material used to prepare the transition layer may include TiN, and the thickness of the negative thermal expansion material layer is designed to vary gradually, which may mean that the thickness of the negative thermal expansion material layer gradually changes along the height direction of the laser.

[0087] like Figures 1 to 5 As shown, in one feasible embodiment, the connector 120 is beam-shaped, and the included angle between the connector 120 and the active region 111 is 10° to 20°.

[0088] In this technical solution, the style of the connector 120 is further provided. The connector 120 can be beam-shaped, that is, the connector 120 can be a cantilever beam. The included angle between the connector 120 and the active region 111 is 10° to 20°, which can optimize the balanced mechanical performance and displacement range of the grating 112 position adjustment, and can more accurately control the resonant cavity length of the laser.

[0089] In some examples, preferably, the angle between the connector 120 and the active region 111 is 15°.

[0090] In one feasible implementation, the length of the connector 120 is 170 μm to 220 μm. This configuration allows for more precise control of the displacement range of the grating 112 position adjustment; preferably, the length of the connector 120 is 200 μm.

[0091] In one feasible implementation, the width and height of the connector 120 are 0.2 to 0.5, i.e., W:H = 1:3; where the width is the dimension of the connector 120 along the grating movement direction (typically 50 μm); the height H is the dimension of the connector 120 perpendicular to the laser body (typically 150 μm); for example, if the width of the connector 120 is 50 μm, then the height of the connector 120 can be 150 μm (satisfying the 1:3 ratio). By determining the above ratio, firstly, the displacement sensitivity is improved. The principle is that increasing the height (H) significantly increases the moment of inertia of the cross section (I∝H3), making the bending displacement of the cantilever beam larger under the same force. This can amplify the micron-level deformation of the thermal compensation module to the displacement required by the grating (±10 μm), improving the compensation efficiency by 27 times (compared to a 1:1 ratio). Secondly, it suppresses lateral deformation. The principle is that increased height (H) compensates for the loss of lateral stiffness due to narrow width (W), avoiding unexpected torsion caused by temperature changes. Displacement direction accuracy is controlled within ±0.5°, ensuring the straightness of the grating's moving path. Thirdly, it optimizes stress distribution. The principle is that a high aspect ratio shifts the maximum stress point towards the neutral axis, reducing surface stress concentration. Fatigue life is increased by 3 times, significantly enhancing reliability. Fourthly, it adapts to manufacturing processes. The principle is that the 1:3 ratio meets the aspect ratio limit (≤3:1) of MEMS lithography-etching processes. Production yield is increased to 98% (compared to 85% for 1:1 designs), reducing costs.

[0092] In one feasible implementation, the material used to fabricate the connector 120 includes monocrystalline silicon or silicon nitride.

[0093] In this technical solution, the connector 120 can be made of monocrystalline silicon material. Monocrystalline silicon has a melting point of 1414℃ and a boiling point of 2355℃. It has stable thermal properties and is easy to process into beam-like structures, which facilitates the fabrication of lasers.

[0094] In this technical solution, the connector 120 can be made of silicon nitride material. Silicon nitride material has high mechanical strength and low coefficient of friction, as well as excellent wear resistance and high temperature resistance, and is especially used to drive the grating 112 to move.

[0095] In one feasible implementation, there are at least two connectors 120. This arrangement, using two or more connectors 120 to move the grating 112, improves the stability and accuracy of displacement transmission.

[0096] In one feasible embodiment, the laser further includes: an encapsulation layer 150 covering the laser body 110, the connector 120, and the deformation compensation module 130; and a support 140 disposed on one side of the laser body 110, with the deformation compensation module 130 connected to the support 140.

[0097] In this technical solution, the laser may also include an encapsulation layer 150, which covers the laser body 110, connector 120 and deformation compensation module 130, thereby encapsulating the laser and making its operation more reliable.

[0098] In this technical solution, the laser may also include a support body 140, which fixes the deformation compensation module 130, so that the deformation compensation module 130 can drive the grating 112 to move through the connector 120.

[0099] In one feasible implementation, the laser further includes an anti-reflective coating disposed on the surface of the encapsulation layer 150.

[0100] In this technical solution, applying an anti-reflective coating above the encapsulation layer 150 reduces optical loss, allowing more photons to oscillate effectively within the laser resonant cavity and be output, thereby increasing the laser's output power. For example, in fiber lasers, optimizing the fiber coating and reducing bending and connection losses can significantly improve the laser's output power, meeting the needs of high-power processing, medical surgery, and other applications.

[0101] In one feasible embodiment, a humidity barrier filler is used to fill the encapsulation layer 150.

[0102] In this technical solution, a humidity barrier filler can be filled inside the encapsulation layer 150, which can improve the environmental adaptability of the laser, reduce moisture absorption, reduce the impact of moisture stress, improve encapsulation reliability, and protect the internal circuitry, thereby improving encapsulation reliability.

[0103] In some examples, the humidity barrier filler can be aluminum oxide.

[0104] In one feasible implementation, the material used to prepare the encapsulation layer 150 includes AlN, Si3N4, or SiO2. This configuration can further improve the encapsulation effect while reducing production costs and enhancing environmental adaptability.

[0105] In one possible implementation, the laser further includes a semiconductor substrate 113, on which an active region 111 is disposed. This configuration provides a location for the active region 111.

[0106] In some examples, the laser provided in this application embodiment can be a DFB laser, and the grating 112 can be a DFB grating 112. The laser wavelength stability provided by this application implementation can reach <0.02nm / ℃, with zero power consumption and a 20% increase in lifetime.

[0107] like Figure 6 As shown, a method for fabricating a laser is provided according to a second aspect of the embodiments of this application, for fabricating a laser as described in any of the above-mentioned technical solutions, the method comprising:

[0108] Step 201: Prepare the deformation compensation module;

[0109] Step 202: Prepare the connector for connection with the deformation compensation module;

[0110] Step 203: Provide the laser body and integrate the deformation compensation module and connectors into the laser body.

[0111] The laser fabrication method provided in this application embodiment is applicable to the fabrication of lasers according to any of the above-described technical solutions, and therefore possesses all the beneficial effects of the lasers described above.

[0112] The laser fabricated by the method provided in this application includes a laser body, a connector, and a deformation compensation module. The deformation compensation module is connected to the grating of the laser body through the connector. Based on this, during the use of the laser, the deformation compensation module deforms due to heating or cooling. Then, the mechanical linkage design formed by the connector can adjust the position of the grating, thereby adjusting the resonant cavity length of the laser. This enables self-adjustment of the laser cavity length, passive control of wavelength stability, reduced power consumption and cost, and effective simplification of the temperature control system. At the same time, it can effectively adjust the wavelength shift caused by temperature changes in the semiconductor laser during operation, maintain the stability of the semiconductor laser wavelength, and replace the thermoelectric cooler in the traditional technology to meet the miniaturization requirements of LD lasers.

[0113] In one feasible implementation, the steps of fabricating the deformation compensation module include: providing a substrate; sequentially fabricating a negative thermal expansion material layer and a shape memory alloy layer on the substrate using thin film deposition technology; and forming the deformation compensation module through photolithography and etching processes.

[0114] This technical solution further provides a method for fabricating the deformation compensation module. A negative thermal expansion layer (ZrW2O8) and a shape memory alloy layer (Ni-Ti) are sequentially deposited on a substrate using thin film deposition techniques (such as sputtering, chemical vapor deposition (CVD), or pulsed laser deposition (PLD)). Subsequently, the desired composite structure is formed through photolithography and etching processes, ensuring tight bonding between the layers. During this process, the thickness and uniformity of the thin film are strictly controlled, and the crystal structure and thermal compensation performance of the material are optimized through annealing to ensure stable operation under temperature variations.

[0115] In one feasible implementation, the steps of fabricating a connector connected to the deformation compensation module include: depositing a connection material layer on a substrate; performing patterning using photolithography and etching processes; and then releasing the connection material layer using a sacrificial layer technique to form the connector.

[0116] This technical solution further provides the fabrication steps for the connector, which can be fabricated using microelectromechanical systems (MEMS) technology. First, the material required for the connector is deposited on a substrate material using methods such as PECVD, followed by patterning through photolithography and etching processes. Next, a sacrificial layer technique (such as a SiO2 sacrificial layer) is used to release the connector, allowing it to move freely. Finally, the dimensions and morphology of the connector are examined using an optical microscope or scanning electron microscope (SEM), and its elastic modulus and fatigue life are evaluated through mechanical testing.

[0117] In one feasible implementation, the steps of providing a laser body and integrating a deformation compensation module and a connector into the laser body include: providing a laser body, coating a bonding material on the contact surface between the connector and the grating; and bonding in a vacuum or inert gas environment to integrate the deformation compensation module and the connector into the laser body.

[0118] This technical solution further provides specific steps for integrating the deformation compensation module and connector into the laser body. The thermal compensation module and the laser body are placed on a high-precision alignment platform, and precise positioning between them is ensured using an optical microscope or infrared alignment system. A bonding material (such as a gold-tin alloy or benzocyclobutene) is coated on the contact surface, and low-temperature bonding (below 200°C) or anodic bonding is performed in a vacuum or inert gas environment to ensure a strong interface bond without damaging the device. Finally, one end of the connector is precisely fixed to the grating to ensure effective displacement transfer.

[0119] In one feasible implementation, the laser further includes: applying a transparent encapsulation material with a thickness not exceeding 50 μm to the laser body, deformation compensation module, and connector, and mixing a humidity barrier material into the transparent encapsulation material to form an encapsulation layer; setting an anti-reflection coating on the encapsulation layer; and curing the encapsulation layer and the anti-reflection coating.

[0120] This technical solution further provides a laser encapsulation step. After integrating the laser body, deformation compensation module, and connectors, a transparent encapsulation material (such as SiO2) with a thickness not exceeding 50μm can be applied to the device surface to provide physical protection and isolate it from external environmental influences. Simultaneously, an anti-reflective coating is added to the encapsulation layer surface to reduce light loss, and a humidity barrier material (such as Al2O3) is incorporated to improve environmental adaptability. Finally, processes such as UV curing or thermal curing ensure a strong bond between the encapsulation layer and the laser.

[0121] In this invention, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term "multiple" refers to two or more unless otherwise explicitly defined. The terms "install," "connect," "link," and "fix" should be interpreted broadly. For example, "connect" can be a fixed connection, a detachable connection, or an integral connection; "link" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0122] In the description of this invention, it should be understood that the terms "upper," "lower," "left," "right," "front," "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or unit referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0123] In the description of this specification, the terms "one embodiment," "some embodiments," "specific embodiment," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0124] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A laser, characterized in that, include: A laser body, the laser body including an active region and a grating disposed on the active region; A connector, one end of which is connected to the grating; A deformation compensation module, wherein the other end of the connector is connected to the grating; The deformation compensation module is used to move the grating through the connector in the event of temperature changes, so as to adjust the resonant cavity length of the laser.

2. The laser according to claim 1, characterized in that, The deformation compensation module includes: A negative thermal expansion layer, said negative thermal expansion layer being made of a negative thermal expansion material; A shape memory alloy layer, wherein the shape memory alloy layer is made of a shape memory alloy material; The negative thermal expansion layer is disposed on the shape memory alloy layer, and at least one of the negative thermal expansion layer and the shape memory alloy layer is connected to the connector.

3. The laser according to claim 2, characterized in that, The materials used to prepare the negative thermal expansion layer include: ZrW2O8 and / or HfW2O8; The materials used to prepare the shape memory alloy layer include: copper-aluminum-nickel alloy or nickel-titanium alloy; and / or The thickness of the negative thermal expansion layer is 10 μm to 20 μm; The thickness of the shape memory alloy layer is 5 to 10 μm; and / or The deformation temperature of the shape memory alloy layer is 20°C to 30°C.

4. The laser according to claim 2, characterized in that, The deformation compensation module further includes: A transition layer is disposed between the negative thermal expansion layer and the shape memory alloy layer to improve the connection strength between the negative thermal expansion layer and the shape memory alloy layer.

5. The laser according to any one of claims 1 to 4, characterized in that, The connector is beam-shaped, and the angle between the connector and the active region is 10° to 20°; and / or The length of the connector is 170 μm to 220 μm; and / or The width-to-height ratio of the connector is 0.2 to 0.5; and / or The materials used to fabricate the connectors include single-crystal silicon or silicon nitride; and / or There are at least two connectors.

6. The laser according to any one of claims 1 to 4, characterized in that, Also includes: An encapsulation layer covers the laser body, the connector, and the deformation compensation module; A support body is arranged on one side of the laser body, and the deformation compensation module is connected to the support body.

7. The laser according to claim 6, characterized in that, Also includes: An anti-reflective coating is disposed on the surface of the encapsulation layer; and / or A humidity barrier filler, wherein the humidity barrier filler is filled within the encapsulation layer; and / or The materials used to prepare the encapsulation layer include AlN, Si3N4, or SiO2; and / or The laser further includes a semiconductor substrate, and the active region is disposed on the semiconductor substrate.

8. A method for fabricating a laser, characterized in that, The method for preparing a laser as described in any one of claims 1 to 7 comprises: Prepare the deformation compensation module; Prepare a connector for connection to the deformation compensation module; A laser body is provided, and the deformation compensation module and the connector are integrated into the laser body.

9. The laser according to claim 8, characterized in that, The steps for preparing the deformation compensation module include: Provide substrate; A negative thermal expansion material layer and a shape memory alloy layer were successively prepared on a substrate using thin film deposition technology; The deformation compensation module is formed using photolithography and etching processes; and / or The steps for preparing the connector for connection with the deformation compensation module include: A bonding material layer is deposited on the substrate; The patterning process is completed using photolithography and etching, and then the connecting material layer is released using sacrificial layer technology to form the connector; and / or The step of providing a laser body and integrating the deformation compensation module and the connector into the laser body includes: The laser body is provided, and a bonding material is coated on the contact surface between the connector and the grating; Bonding is performed in a vacuum or inert gas environment to integrate the deformation compensation module and the connector into the laser body.

10. The laser according to claim 9, characterized in that, Also includes: A transparent encapsulation material with a thickness not exceeding 50 μm is applied to the laser body, the deformation compensation module, and the connector, and a humidity barrier material is mixed into the transparent encapsulation material to form an encapsulation layer; An anti-reflective coating is provided on the encapsulation layer; The encapsulation layer and the anti-reflective coating are cured.

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