Electrostatic chuck device

By optimizing the refrigerant flow path structure in the electrostatic chuck device, the problem of uneven temperature distribution within the wafer surface was solved, achieving high heat uniformity, which is suitable for semiconductor manufacturing equipment.

CN120937128APending Publication Date: 2025-11-11SUMITOMO OSAKA CEMENT CO LTD
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Patent Information

Application Number
CN202480019812.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-04-14
Filing Date
2024-04-05
Publication Date
2025-11-11

AI Technical Summary

Technical Problem

In existing technologies, the temperature distribution within the wafer surface of semiconductor manufacturing equipment is uneven, making it difficult to meet the processing requirements of highly integrated devices.

Method used

An electrostatic chuck device was designed, comprising a plate-shaped electrostatic chuck part and a disc-shaped base. The base has a through hole and a refrigerant flow path. The refrigerant flow path consists of a first flow path part and a second flow path part. The cross-sectional area of ​​the first flow path part is smaller than that of the second flow path part. The flow path structure is optimized to improve heat uniformity.

Benefits of technology

The electrostatic chuck device achieves high heat uniformity, effectively reducing temperature distribution differences within the wafer surface and meeting the processing requirements of highly integrated devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

An electrostatic chuck device is provided with: a plate-shaped electrostatic chuck part having a placement surface on which a plate-shaped sample is placed and having an electrostatic adsorption electrode provided therein; and a base part having a disc shape centered on the central axis and supporting the electrostatic chuck part on the support surface thereof from the side opposite to the placement surface, the base part being internally provided with a refrigerant flow path extending along the support surface, the refrigerant flow path having: a first flow path part in which the refrigerant flow path extends along the support surface, and a second flow path part in which the refrigerant flow path extends; at least one through hole penetrating through the base part along the axial direction of the central axis is taken as the center, and the through hole is separated from the hole on the outer side of the hole in the hole diameter direction; and second flow path portions respectively located on both sides of the first flow path portion in the direction in which the refrigerant flow path extends, the flow path cross-sectional area of the first flow path portion being smaller than the flow path cross-sectional area of the second flow path portions.
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Description

Technical Field

[0001] This invention relates to an electrostatic chuck device.

[0002] This application claims priority based on Japan Patent Application No. 2023-066281 filed on April 14, 2023, the contents of which are incorporated herein by reference. Background Technology

[0003] In semiconductor manufacturing apparatuses that utilize plasma, such as plasma etching apparatuses and plasma CVD apparatuses, electrostatic chuck devices are used as a means to simply mount and fix wafers on a mounting surface and maintain the wafers at a desired temperature. Patent Document 1 discloses a structure comprising: a plate-shaped ceramic body including a mounting surface; and a substrate component having cooling passages provided internally for the flow of a cooling medium.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2007-035878 Summary of the Invention

[0007] The technical problem to be solved by the invention

[0008] In recent years, there has been a trend towards high integration in semiconductor devices. Therefore, the manufacturing of these devices requires microfabrication techniques for wiring or three-dimensional mounting techniques. When implementing these techniques, it is desirable for semiconductor manufacturing equipment to reduce the in-plane temperature distribution (temperature difference) of the wafer. In previous technologies, it was sometimes impossible to reduce the in-plane temperature distribution of the wafer to the desired temperature difference, thus improvements are sought.

[0009] The present invention was made in view of the above circumstances, and its object is to provide an electrostatic chuck device with high heat uniformity.

[0010] means for solving technical problems

[0011] This invention provides an electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface for placing a plate-shaped sample and having an electrostatic adsorption electrode disposed inside; and a base portion having a disk shape centered on a central axis and supporting the electrostatic chuck portion on a support surface from a side opposite to the mounting surface, the base portion having: a through hole penetrating the base portion axially along the central axis; and a refrigerant flow path disposed inside the base portion and extending along the support surface, the refrigerant flow path having: a first flow path portion formed at intervals outside the aperture direction centered on the through hole; and a second flow path portion located on both sides of the extension direction of the refrigerant flow path relative to the first flow path portion, the flow path cross-sectional area of ​​the first flow path portion being smaller than the flow path cross-sectional area of ​​the second flow path portion.

[0012] That is, the present invention includes the inventions described below [1] to [8].

[0013] The following inventions are also preferably combined in two or more as needed.

[0014] [1] An electrostatic chuck device comprising: a plate-shaped electrostatic chuck portion having a mounting surface for mounting a plate-shaped sample and having an electrostatic adsorption electrode disposed therein; and a base portion having a disk shape centered on a central axis and supporting the electrostatic chuck portion from a side opposite to the mounting surface on a support surface thereon, the base portion having: at least one through hole penetrating the base portion along the central axis axially; and a refrigerant flow path disposed inside the base portion and extending along the support surface, the refrigerant flow path having: a first flow path portion; and a second flow path portion connected to both ends of the first flow path portion, the first flow path portion being formed with the through hole as the center and spaced apart from the through hole in the aperture direction of the through hole, the second flow path portion being located on both sides of the first flow path portion in the extension direction of the refrigerant flow path, the flow path cross-sectional area of ​​the first flow path portion being smaller than the flow path cross-sectional area of ​​the second flow path portion.

[0015] [2] According to the electrostatic chuck device of [1], the width dimension of the first flow path portion is smaller in the direction intersecting the axial direction and the extension direction compared with the second flow path portion.

[0016] [3] According to the electrostatic chuck device of [1] or [2], the flow path cross-sectional area of ​​the first flow path portion is more than 0.5 times and less than 1.0 times the flow path cross-sectional area of ​​the second flow path portion.

[0017] [4] The electrostatic chuck device according to any one of [1] to [3], wherein the first flow path portion has a first inner side surface and a second inner side surface that are opposite to each other, the first inner side surface being formed at a distance from the through hole in the aperture direction outside the through hole and facing outward in the aperture direction, the second inner side surface being formed at a distance from the first inner side surface at a position further outward in the aperture direction than the first inner side surface and facing inward in the aperture direction, the first inner side surface being formed as an arc concentric with the inner circumferential surface of the through hole.

[0018] [5] According to the electrostatic chuck device of [4], the second inner surface is formed as an arc concentric with the inner circumferential surface of the through hole.

[0019] [6] According to the electrostatic chuck device of [5], when viewed from the axial direction, the first inner side and the second inner side are formed in the range of 20 to 300° with the through hole as the center.

[0020] [7] The electrostatic chuck device according to any one of [4] to [6], wherein,

[0021] In the second flow path portion located on at least one side of the extending direction of the refrigerant flow path relative to the first flow path portion, a connecting surface that is curved into an arc shape when viewed from the axial direction is formed between the inner side of the second flow path portion connected to the first inner side.

[0022] [8] The electrostatic chuck device according to any one of [4] to [7], wherein the thickness of the wall portion formed between the inner peripheral surface of the through hole and the first inner surface is 1 mm or more and 10 mm or less.

[0023] [9] The electrostatic chuck device according to any one of [1] to [8], wherein the refrigerant flow path is in a continuous vortex shape when viewed from above, the base also has a wall portion that divides the refrigerant flow path, the through hole is circular when viewed from above and penetrates at least a portion of the wall portion along the axial direction, the wall portion has a first portion with the through hole and a second portion located on both sides of the portion without the through hole, the width of the first portion is greater than the width of the second portion when viewed from above, the width of the first portion gradually changes, the side of the first portion forms the inner side of the first flow path, and the side of the second portion forms the inner side of the second flow path.

[0024] Invention Effects

[0025] According to the present invention, an electrostatic chuck device with high heat uniformity can be provided. Attached Figure Description

[0026] Figure 1 This is a schematic cross-sectional view showing an example of an electrostatic chuck device according to an embodiment.

[0027] Figure 2 This is a schematic top view showing an example of a refrigerant flow path in an embodiment.

[0028] Figure 3 This is a schematic diagram showing an example of a first flow path portion and a second flow path portion formed around a through hole in the refrigerant flow path of an embodiment.

[0029] Figure 4 This is a schematic cross-sectional view showing an example of a first flow path portion and a second flow path portion formed around a through hole in the refrigerant flow path of an embodiment.

[0030] Figure 5 This is a diagram illustrating the phenomenon that occurs around the through hole during processing in the refrigerant flow path of the embodiment.

[0031] Figure 6 This is a schematic top view showing the refrigerant flow path in a modified embodiment. Detailed Implementation

[0032] Hereinafter, a preferred example of the electrostatic chuck device according to this embodiment will be described based on the accompanying drawings. Furthermore, in all the following drawings, the dimensions, proportions, etc., of each component have been appropriately modified for easier observation.

[0033] Furthermore, this embodiment is described in detail to better understand the spirit of the invention, and is not limited to this invention unless otherwise specified. For example, unless otherwise specifically limited, conditions such as materials, quantities, types, quantities, sizes, shapes, ratios, and temperatures may be changed, added, or omitted as needed. Preferred examples may be substituted or shared between the embodiments described below.

[0034] In addition, in this specification, the degree of in-plane temperature distribution (temperature difference) of the electrostatic chuck portion (or mounting surface) is sometimes referred to as "thermal uniformity". "High thermal uniformity" means that the in-plane temperature distribution in the area of ​​the mounting surface of the electrostatic chuck portion where the plate-shaped sample is mounted is small.

[0035] <Implementation Method>

[0036] Figure 1 This is a cross-sectional view showing a preferred example of the electrostatic chuck device 1 according to the embodiment.

[0037] The electrostatic chuck device 1 has a plate-shaped electrostatic chuck section 2, a heating element 5, and a disc-shaped base 3. The electrostatic chuck device 1 is disc-shaped with the central axis J as its center. The electrostatic chuck section 2, the heating element 5, and the base 3 are stacked sequentially along the axial direction of the central axis J.

[0038] In the following description, the orientation of each part of the electrostatic chuck device 1 is explained with respect to the central axis J. In the following description, the axial direction of the central axis J is sometimes simply referred to as "axial," the radial direction centered on the central axis J is sometimes simply referred to as "radial," and the circumferential direction centered on the central axis J is sometimes simply referred to as "circumferential." Furthermore, in the following description, the vertical direction of each part is defined as the orientation in which the direction extending from the central axis J is aligned with the vertical direction. However, the orientation of the electrostatic chuck device 1 during use is not limited.

[0039] (Electrostatic chuck section)

[0040] The electrostatic chuck section 2 includes: a mounting plate 11, the upper surface of which is set as a mounting surface 11a for mounting a circular plate-shaped sample W such as a semiconductor wafer; a support plate 12, which is integral with the mounting plate 11 and supports the bottom side of the mounting plate 11; an electrostatic adsorption electrode 13 disposed between the mounting plate 11 and the support plate 12; and an insulating material layer 14 that insulates the area around the electrostatic adsorption electrode 13. In other words, the electrostatic chuck section 2 has a mounting surface 11a for mounting the plate-shaped sample W and an electrostatic adsorption electrode 13 disposed inside it.

[0041] The mounting plate 11 and the support plate 12 are disc-shaped components that make the overlapping surfaces have the same shape. The mounting plate 11 and the support plate 12 are made of sintered ceramic bodies that have mechanical strength and durability against corrosive gases and their plasmas. The mounting plate 11 and the support plate 12 will be described in detail later.

[0042] On the mounting surface 11a of the mounting plate 11, a plurality of protrusions 11b with diameters smaller than the thickness of the plate-shaped specimen are formed at predetermined intervals. These protrusions 11b support the plate-shaped specimen W.

[0043] Furthermore, a peripheral wall 17 is formed at the periphery of the mounting surface 11a. The peripheral wall 17 is formed to the same height as the protrusion 11b, and together with the protrusion 11b, it supports the plate-shaped sample W.

[0044] The electrostatic adsorption electrode 13 serves as an electrode for an electrostatic chuck, which generates an electric charge and uses electrostatic adsorption force to fix the plate-shaped sample W. The shape or size of the electrostatic adsorption electrode 13 is appropriately adjusted according to its application.

[0045] The electrostatic adsorption electrode 13 can be made of any selected material. For example, it is preferably made of conductive ceramics such as alumina-tantalum carbide (Al2O3-Ta4C5) conductive composite sintered body, alumina-tungsten (Al2O3-W) conductive composite sintered body, alumina-silicon carbide (Al2O3-SiC) conductive composite sintered body, aluminum nitride-tungsten (AlN-W) conductive composite sintered body, aluminum nitride-tantalum (AlN-Ta) conductive composite sintered body, yttrium oxide-molybdenum (Y2O3-Mo) conductive composite sintered body, or high-melting-point metals such as tungsten (W), tantalum (Ta), and molybdenum (Mo).

[0046] Electrostatic adsorption electrode 13 can be easily formed by film formation methods such as sputtering or vapor deposition, or by coating methods such as screen printing.

[0047] An insulating material layer 14 surrounds the electrostatic adsorption electrode 13, protecting it from corrosive gases and their plasma. Furthermore, the insulating material layer 14 integrally bonds the boundary between the mounting plate 11 and the support plate 12, i.e., the outer peripheral region excluding the electrostatic adsorption electrode 13. The insulating material layer 14 is made of an insulating material with the same composition or main components as the materials constituting the mounting plate 11 and the support plate 12.

[0048] (Heating element)

[0049] The heating element 5 heats the electrostatic chuck portion 2. The heating element 5 is disposed on the lower surface side of the electrostatic chuck portion 2. The structure or material of the heating element 5 can be arbitrarily selected. For example, the heating element 5 is obtained by processing a non-magnetic metal sheet with a constant thickness of 0.2 mm or less, preferably around 0.1 mm, into a desired heater shape, such as a shape in which the strip-shaped conductive sheet is bent and the overall outline is annular. For example, titanium (Ti) sheets, tungsten (W) sheets, and molybdenum (Mo) sheets can be used as non-magnetic metal sheets. To form the heating element 5 into the specified heater shape, photolithography or laser processing can be used, for example.

[0050] The heating element 5 can be installed by bonding a non-magnetic metal sheet to the electrostatic chuck portion 2 and then machining it onto the surface of the electrostatic chuck portion 2. Alternatively, it can be installed by transferring a component separately machined at a location different from the electrostatic chuck portion 2 onto the surface of the electrostatic chuck portion 2.

[0051] The heating element 5 is bonded and fixed to the bottom surface of the support plate 12 by an adhesive 4 made of sheet or film silicone resin or acrylic resin, which has uniform thickness, heat resistance and insulation.

[0052] The electrostatic chuck portion 2 and the base 3 are bonded together by an adhesive layer 8 disposed between the electrostatic chuck portion 2 and the base 3. The adhesive layer 8 is formed, for example, from a cured silicone-based resin composition obtained by heating and curing, or from an acrylic resin. Preferably, the adhesive layer 8 is formed by placing a flowable resin composition between the electrostatic chuck portion 2 and the base 3 and then heating and curing it. As a result, the unevenness between the electrostatic chuck portion 2 and the base 3 is filled by the adhesive layer 8, and voids or defects are less likely to occur in the adhesive layer 8. Therefore, the thermal conductivity of the adhesive layer 8 can be made uniform in-plane, improving the heat uniformity of the electrostatic chuck portion 2.

[0053] (Base)

[0054] The base 3 cools the electrostatic chuck portion 2. The base 3 is disc-shaped with the central axis J as its center. The base 3 has a support surface 3a for supporting the electrostatic chuck portion 2 and a bottom surface 3b facing the side opposite to the support surface 3a. The electrostatic chuck portion 2 is supported on the support surface 3a from the side opposite to the mounting surface 11a.

[0055] The material constituting the base 3 is not particularly limited as long as it is a metal or a composite material containing such metal with excellent thermal conductivity, electrical conductivity, and processability. For example, aluminum (Al), aluminum alloys, copper (Cu), titanium (Ti), copper alloys, stainless steel (SUS), etc. are preferred. The surface of the base 3 that is at least exposed to plasma is preferably treated with an alumina film or has an insulating film such as alumina formed.

[0056] A refrigerant flow path 40 is provided inside the base 3 for refrigerant to flow. The refrigerant flow path 40 has an inlet 40a for drawing refrigerant from the outside of the base 3 into the refrigerant flow path 40, and an outlet 40b for discharging refrigerant from the refrigerant flow path 40 to the outside of the base 3. The inlet 40a and outlet 40b open onto the bottom surface 3b of the base 3. Furthermore, in… Figure 1 In the illustration, the radial positions of the inlet 40a and outlet 40b are shown schematically and do not represent the actual configuration.

[0057] The refrigerant flow path 40 extends along the support surface 3a. That is, the refrigerant flow path 40 extends along a plane orthogonal to the central axis J. The cross-section of the refrigerant flow path 40 is rectangular along its entire length. In the refrigerant flow path 40 of this embodiment, the axial dimension Dx (depth) of the refrigerant flow path 40 is the same along its entire length. The refrigerant flow path 40 has an upper component 35 and a lower component 36. That is, the refrigerant flow path 40 can be formed by the upper component 35 and the lower component 36. The upper component 35 is a plate-shaped component with the axial direction as the thickness direction. Furthermore, the lower component 36 is a plate-shaped component with an axial thickness dimension larger than that of the upper component 35.

[0058] A groove 31g opening upwards is provided on the upper surface of the lower component 36. In the lower component 36, the portions between the grooves 31g constitute a wall portion 50. That is, the base 3 has a wall portion 50. The wall portion 50 divides the grooves 31g from each other. Furthermore, the lower component 36 has an outer peripheral portion (outer edge portion) that surrounds the wall portion 50 and the groove portion 31g, and is connected to a portion of the wall portion 50. Preferably, the outer peripheral portion has a constant thickness, and when viewed from above, at least a portion is annular or substantially annular.

[0059] The opening of the groove 31g is covered by the upper component 35. The refrigerant flows within the area surrounded by the inner surface of the groove 31g of the lower component 36 and the upper component 35. That is, the refrigerant flow path 40 is configured as an area surrounded by the inner surface of the groove 31g (bottom surface and two opposing sides) and the lower surface of the upper component 35. Furthermore, the wall portion 50 radially divides the refrigerant flow path 40. The lower surface of the upper component 35 and the upper surface of the lower component 36 are joined together by any chosen method, such as brazing.

[0060] Figure 2 This is a schematic diagram of the refrigerant flow path 40 of this embodiment as viewed from above.

[0061] The refrigerant flow path 40 of this embodiment appears vortex-shaped when viewed from above; more specifically, it is a vortex-shaped structure that extends radially outward relative to the central axis J. The refrigerant flow path 40 of this embodiment is a monolithic, continuous structure along its entire length. In this embodiment, the refrigerant flow path 40 continuously moves away from the central axis J while increasing its radius of curvature circumferentially. Wall portions 50 exist between the radially overlapping flow path portions of the refrigerant flow path 40. The wall portions 50, centered on the central axis J, define the refrigerant flow path 40 in a vortex shape.

[0062] The refrigerant flow path 40 has an outer peripheral flow path portion 41 and an inner peripheral flow path portion 42. The outer peripheral flow path portion 41 is located in the outermost peripheral region of the entire length of the refrigerant flow path 40, and extends circumferentially for less than one circumference around the central axis J. On the other hand, the inner peripheral flow path portion 42 is disposed radially inward of the entire length of the refrigerant flow path 40 compared to the outer peripheral flow path portion 41. The outer peripheral flow path portion 41 and the inner peripheral flow path portion 42 are connected to each other. In this embodiment, the inlet 40a is provided in the outer peripheral flow path portion 41, and the outlet 40b is provided in the inner peripheral flow path portion 42. The inlet 40a and the outlet 40b are respectively provided at or near the end of the refrigerant flow path 40. Therefore, in this embodiment, the refrigerant flows in the refrigerant flow path 40 in the order of the outer peripheral flow path portion 41 and the inner peripheral flow path portion 42.

[0063] The outer peripheral flow path 41 is disposed at the outermost periphery in the refrigerant flow path 40. In this example, the outer peripheral flow path 41 extends in an arc shape about 3 / 4 of its circumference relative to the central axis J. An inlet 40a is provided at one end of the outer peripheral flow path 41. Furthermore, the other end of the outer peripheral flow path 41 is connected to the inner peripheral flow path 42.

[0064] The width of the outer peripheral flow path 41 is the same throughout its entire length. In this embodiment, the refrigerant flow path 40 has a rectangular cross-section throughout its entire length, and its axial dimension (depth) is the same. Therefore, the cross-sectional area of ​​the outer peripheral flow path 41 is the same throughout its entire length. Furthermore, the flow path cross-section can also be considered as a cross-section intersecting the axial direction and the direction of flow path extension.

[0065] The inner peripheral flow path 42 extends in a vortex shape, rotating approximately one and a half revolutions around the central axis J. One end of the inner peripheral flow path 42 is connected to the outer peripheral flow path 41. Furthermore, an outlet 40b is provided at the other end of the inner peripheral flow path 42.

[0066] The width of the inner peripheral flow path 42 decreases continuously toward the radially outward direction. Therefore, the cross-sectional area of ​​the flow path of the inner peripheral flow path 42 decreases continuously toward the radially outward direction.

[0067] The wall portion 50 extends in a vortex shape, rotating approximately one revolution and about three-quarters of a revolution around the central axis J. In this embodiment, the wall portion 50 continuously moves away from the central axis J while increasing its radius of curvature circumferentially. The wall portion 50 is located between and defines the inner circumferential flow path portions 42 in the inner circumferential region 50A. Furthermore, the wall portion 50 is located between and defines the outer circumferential flow path portion 41 and the inner circumferential flow path portion 42 in the outer circumferential region 50B.

[0068] The radial dimension of the wall portion 50 decreases continuously with respect to the central axis J. Therefore, in the refrigerant flow path 40, the radial distance between the radially overlapping flow path portions decreases continuously with respect to the central axis J. The through hole 80 can be positioned at the center of the radial dimension of the wall portion 50. The radial dimension of the wall portion 50 can be temporarily expanded around the through hole 80.

[0069] The electrostatic chuck device 1 has a through hole 80 that extends axially through the electrostatic chuck portion 2 and the base 3. The through hole 80 is, for example, formed as a lifting pin insertion hole. The number of through holes 80 can be arbitrarily selected, and multiple through holes can be provided. For example, the number of through holes 80 can be 1 to 50, 2 to 30, 3 to 10, or 4 to 6. In this embodiment, the through holes 80 are formed at multiple locations, for example, at three locations spaced apart circumferentially around the central axis J. There are no limitations on the number or arrangement of the through holes 80. A lifting pin (not shown) for lifting the plate-shaped sample W is inserted into the through hole 80, which serves as a lifting pin insertion hole. By moving the lifting pin from inside the through hole 80 toward a position above the mounting surface 11a, the plate-shaped sample W is raised and lowered. The shape of the through hole 80 is, for example, circular when viewed from above.

[0070] The through hole 80 can be, for example, a gas supply hole or other purpose. The through hole 80 opens into the mounting surface 11a. When used as a gas supply hole, a cooling gas such as He is supplied to the through hole 80. The cooling gas introduced from the gas supply hole flows between the mounting surface 11a and the lower surface of the plate-shaped sample W or between the plurality of protrusions 11b to cool the plate-shaped sample W.

[0071] Each through hole 80 extends axially through the base 3. That is, the base 3 has through holes 80 and refrigerant flow paths 40. The through holes 80 extend axially through a portion of the wall 50 of the base 3. Preferably, the through holes 80 and the refrigerant flow paths 40 are not connected to each other. The through holes 80 are formed between radially adjacent refrigerant flow paths 40. That is, each through hole 80 is disposed within the wall 50 of the base 3. The through holes 80 may be located between inner peripheral flow path portions 42 in the inner peripheral region 50A, or between outer peripheral flow path portion 41 and inner peripheral flow path portion 42 in the outer peripheral region 50B.

[0072] In the following description, when viewing the base 3 from the axial direction, the radial direction of the through hole 80 centered on the through hole 80 is sometimes referred to as the borehole direction.

[0073] Figure 3 This is a schematic diagram showing the first flow path portion and the second flow path portion formed around the through hole in the refrigerant flow path of the embodiment. Additionally, in Figure 3 In the diagram, a combination of two first flow path sections and a second flow path section is shown via wall portion 50. Wall portion 50 has a first portion with a through hole 80 and second portions located on either side of the first portion without through holes. In top view, the width of the first portion (including the radial dimension of the through hole) is greater than the width of the second portion and gradually changes. The first portion has a convex outer wall. Furthermore, the outer surface of the first portion is the inner surface of the first flow path section, and the outer surface of the second portion is the inner surface of the second flow path section.

[0074] like Figure 3 As shown, the refrigerant flow path 40 narrows in width around the through hole 80, thus narrowing the cross-sectional area of ​​the flow path. The refrigerant flow path 40 has a first flow path portion 40N and a second flow path portion 40W connected to both sides thereon. The length of the second flow path portion 40W in the extending direction can be arbitrarily selected, for example, it can be about 1 to 5 times or 2 to 4 times the length of the first flow path portion 40N. The first flow path portion 40N is connected to the wall portion 50 of the portion where the through hole 80 is provided. That is, the first flow path portion 40N is formed at a distance from the through hole 80 in the aperture direction outside the through hole 80 centered on the through hole 80. The first flow path portion 40N bends along the inner circumferential surface 80f of the through hole 80 in the aperture direction outside the through hole 80. The second flow path portion 40W is located on both sides of the refrigerant flow path 40 in the extending direction relative to the first flow path portion 40N. The second flow path portion 40W is continuous with the first flow path portion 40N.

[0075] Figure 4 This is a cross-sectional view showing a first flow path portion formed around the through hole and a second flow path portion connected to the first flow path portion in the refrigerant flow path of the embodiment.

[0076] like Figure 3 As shown, the width dimension Wn of the first flow path section 40N is smaller than the width dimension Ww of the second flow path section 40W. For example... Figure 4 As shown, the height (depth) of the first flow path 40N is the same as the height (depth) of the second flow path 40W. Therefore, the cross-sectional area of ​​the first flow path 40N is smaller than that of the second flow path 40W. Because the cross-sectional area of ​​the first flow path 40N is smaller than that of the second flow path 40W, the flow velocity of the refrigerant flowing within the refrigerant flow path 40 is higher in the first flow path 40N with its smaller cross-sectional area compared to the second flow path 40W. This allows for effective heat extraction from the wall portion 50 surrounding the through hole 80.

[0077] Here, the cross-sectional area of ​​the first flow path 40N is preferably 0.5 times or more and less than 1.0 times the cross-sectional area of ​​the second flow path 40W. If the cross-sectional area of ​​the first flow path 40N is less than 0.5 times the cross-sectional area of ​​the second flow path 40W, the pressure loss in the first flow path 40N is likely to become excessively high. On the other hand, if the cross-sectional area of ​​the first flow path 40N is more than 1 times the cross-sectional area of ​​the second flow path 40W, the refrigerant flow rate in the first flow path 40N will become less than that in the second flow path 40W. The cross-sectional area of ​​the first flow path 40N is more preferably 0.6 times or more and less than 0.97 times the cross-sectional area of ​​the second flow path 40W, and even more preferably 0.7 times or more and less than 0.95 times. It can be 0.75 times or more and less than 0.90 times, or 0.80 times or more and less than 0.85 times.

[0078] like Figure 3 As shown, the first flow path 40N has a first inner surface 40s and a second inner surface 40t that are opposite to each other.

[0079] The first inner surface 40s is formed with respect to the through hole 80, centered on the through hole 80, and spaced apart from the outside of the through hole 80 in the aperture direction. The first inner surface 40s faces outward in the aperture direction, that is, towards the direction away from the through hole 80. The first inner surface 40s is formed as an arc concentric with the inner circumferential surface 80f of the through hole 80. Thus, the first inner surface 40s protrudes outward in the aperture direction relative to the inner surface 40g of the second flow path portion 40W, which is located on both sides of the first flow path portion 40N in the extension direction of the refrigerant flow path 40.

[0080] Here, the thickness T of the wall portion 50 formed between the first inner surface 40s and the inner peripheral surface 80f of the through hole 80 can be arbitrarily chosen, but is preferably 1 mm or more and 10 mm or less. It can be 1 mm or more and 3 mm or less, or 3 mm or more and 6 mm or less, or 6 mm or more and 10 mm or less. If the thickness T is less than 1 mm, the mechanical strength of the wall portion 50 may be insufficient. Furthermore, if the thickness T exceeds 10 mm, the wall portion 50 becomes too thick, which may lead to a reduction in the cooling effect based on the refrigerant flowing within the refrigerant flow path 40.

[0081] The second inner surface 40t is formed with a gap relative to the first inner surface 40s on the outer side in the aperture direction. The second inner surface 40t faces inward in the aperture direction, that is, towards the side opposite to the direction away from the through hole 80. The second inner surface 40t is formed as an arc concentric with the inner circumferential surface 80f of the through hole 80. That is, as... Figure 3 As shown, the first inner surface 40s and the second inner surface 40t are respectively formed to be concentric with the inner circumferential surface 80f of the through hole 80.

[0082] Furthermore, while the first inner surface 40s and the second inner surface 40t are respectively formed concentrically with the inner circumferential surface 80f of the through hole 80, this is not a limitation. For example, only one of the inner surfaces may be formed concentrically. These may also be non-concentric curved surfaces. For example, the first inner surface 40s and the second inner surface 40t may be curved with appropriate curvatures, instead of being concentric with the inner circumferential surface 80f of the through hole 80. Moreover, from the viewpoint of making the flow path cross-sectional area of ​​the first flow path portion 40N smaller than the flow path cross-sectional area of ​​the second flow path portion 40W, only the first inner surface 40s may protrude outward in the aperture direction relative to the inner surface 40g of the second flow path portion 40W, while the second inner surface 40t does not protrude but is formed in a manner that is smoothly continuous with the inner surface 40h of the second flow path portion 40W.

[0083] When viewed axially from the first inner surface 40s and the second inner surface 40t, the angle θ formed by the concentrically formed portions and the center of the through hole 80 can be arbitrarily chosen, but is preferably formed in the range of 20 to 300°. It can also be in the range of 20 to 45°, 45 to 90°, 90 to 180°, 180 to 300°, etc. If the angle θ is less than 20°, the contribution of the first inner surface 40s protruding outward in the aperture direction to reducing the cross-sectional area of ​​the first flow path portion 40N becomes less, especially. If the angle θ exceeds 300°, the wall portion 50 between the inner circumferential surface 80f of the through hole 80 and the first inner surface 40s is continuous in the circumferential direction around the through hole 80, becoming a nearly cylindrical shape. Therefore, the axial rigidity of the wall portion 50 around the through hole 80 is increased. Thus, as... Figure 5 As shown by the double-dotted line L1, when the support surface 3a and other planes of the base 3 are machined by a machine tool, the portion P1 of the wall 50 surrounding the through hole 80, compared to the portion P2 where the refrigerant flow path 40 is formed below the upper component 35, has a smaller downward deflection due to stress from the machine tool. In portion P2, because the cutting is performed while the upper component 35 is deflected downward due to stress from the machine tool, the amount of material removed from the upper component 35 is small. In contrast, in portion P1 of the wall 50 surrounding the through hole 80, the smaller downward deflection due to stress from the machine tool results in a larger amount of material removed. As a result, if the deflection of portion P2 where the refrigerant flow path 40 is formed recovers after the machining is completed, then the portion P1 of the wall 50 surrounding the through hole 80 becomes lower relative to portion P2 where the refrigerant flow path 40 is formed. As a result, when the plate-shaped sample W is placed on the support surface 3a, there is a possibility that a small gap may be generated between the portion P1 of the wall 50 around the through hole 80 and the plate-shaped sample W.

[0084] In contrast, by setting the aforementioned angle θ to less than 300°, the phenomenon described above can be suppressed.

[0085] And, as Figure 3 As shown, in the second flow path section 40W located on both sides of the refrigerant flow path 40 in the extending direction relative to the first flow path section 40N, a connecting surface 40j that is curved into an arc shape when viewed from the axial direction is formed between the inner surface 40g and the first inner surface 40s, which are connected to the first inner surface 40s. Furthermore, a connecting surface 40k that is curved into an arc shape when viewed from the axial direction is also formed between the inner surface 40h and the second inner surface 40t of the second flow path section 40W, which are connected to the second inner surface 40t.

[0086] (Effects of the implementation method)

[0087] In the electrostatic chuck device 1 of this embodiment, the refrigerant flow path 40 includes: a first flow path portion 40N, formed at a distance from the outer side of the through hole 80 in the aperture direction; and a second flow path portion 40W, located on both sides of the first flow path portion 40N in the extending direction of the refrigerant flow path 40. The cross-sectional area of ​​the first flow path portion 40N is smaller than that of the second flow path portion 40W. Therefore, the refrigerant flow rate in the refrigerant flow path 40 increases in the first flow path portion 40N, which has a smaller cross-sectional area, relative to the second flow path portion 40W. This improves the cooling performance of the first flow path portion 40N. A lifting pin or a cooling gas such as He is inserted into the through hole 80 as needed. To ensure electrical insulation from the base component, it is preferable to insert an insulating component into the through hole 80. However, as a result, the heat insulation performance of the through hole 80 increases, while the cooling performance decreases. Consequently, the refrigerant-based cooling effect around the through hole 80 decreases, leading to a tendency for the temperature to rise. In contrast, by making the cross-sectional area of ​​the first flow path 40N smaller than that of the second flow path 40W, an electrostatic chuck device 1 with high heat uniformity can be provided.

[0088] In this embodiment, the width of the first flow path portion 40N is smaller than that of the second flow path portion 40W in the direction intersecting the axial and extending directions. This makes it easier to reduce the cross-sectional area of ​​the first flow path portion 40N compared to the cross-sectional area of ​​the second flow path portion 40W.

[0089] In this embodiment, the cross-sectional area of ​​the first flow path section 40N is preferably 0.5 times or more and less than 1.0 times that of the second flow path section 40W. Therefore, by reducing the cross-sectional area of ​​the first flow path section 40N, heat uniformity can be effectively improved.

[0090] In this embodiment, the first flow path portion 40N has a first inner surface 40s and a second inner surface 40t. The first inner surface 40s is preferably formed as an arc concentric with the inner peripheral surface 80f of the through hole 80. This allows the thickness T of the wall portion 50 between the first inner surface 40s and the inner peripheral surface 80f to be kept constant, and improves heat uniformity.

[0091] In this embodiment, the second inner surface 40t is preferably formed as an arc concentric with the inner circumferential surface 80f of the through hole 80. Thus, by forming the first inner surface 40s and the second inner surface 40t concentrically, the first flow path portion 40N can be easily formed using a machine tool.

[0092] When viewed from the axial direction, the first inner surface 40s and the second inner surface 40t of this embodiment are preferably formed within a range of 20 to 300° with the center of the through hole 80 as the center. As a result, the flow path cross-sectional area of ​​the first flow path portion 40N can be reduced while suppressing excessive increase in the rigidity of the wall portion 50 around the through hole 80.

[0093] In this embodiment, a connecting surface 40j is formed between the first inner surface 40s and the inner surface 40g connected to the first inner surface 40s. The connecting surface 40j is preferably curved when viewed from above. This prevents delamination at the boundary between the first inner surface 40s and the inner surface 40g during refrigerant flow within the refrigerant flow path 40. Consequently, it suppresses the formation of areas with low cooling efficiency around the through hole 80, improving heat uniformity.

[0094] In this embodiment, the thickness of the wall portion 50 formed between the inner circumferential surface of the through hole 80 and the first inner surface 40s is preferably 1 mm or more and 10 mm or less. This ensures the strength of the wall portion 50 while suppressing a decrease in heat uniformity.

[0095] Furthermore, in this embodiment, the inner peripheral flow path 42 is positioned further radially inward than the outer peripheral flow path 41. The base 3 maintains a constant temperature for the plate-shaped sample W by actively cooling the area in the electrostatic chuck section 2 that overlaps with the plate-shaped sample W when viewed from the axial direction. According to this embodiment, by providing the inner peripheral flow path 42 and the outer peripheral flow path 41 and optimizing their respective flow path structures, the heat uniformity of the electrostatic chuck section 2 can be improved to the vicinity of the outer edge Wa of the plate-shaped sample W.

[0096] <Modifications of the Implementation>

[0097] Furthermore, in the above embodiment, the refrigerant flow path 40 has an outer peripheral flow path portion 41 and an inner peripheral flow path portion 42, but is not limited thereto.

[0098] Figure 6 This is a schematic diagram showing a modified example of the refrigerant flow path 140 according to the embodiment. Hereinafter, based on... Figure 3The refrigerant flow path 140 of the second embodiment will be described. Furthermore, for structures identical to those in the above embodiments, the same symbols will be used, and detailed descriptions will be omitted.

[0099] (Flow path)

[0100] In this embodiment, the refrigerant flow path 140 is a double vortex shape that folds back near the central axis J. The double vortex of the refrigerant flow path 140 extends radially outward relative to the central axis J. In this embodiment, the refrigerant flow path 140 is an integrally connected structure along its entire length. The flow path cross-section of the refrigerant flow path 140 in this embodiment is rectangular along its entire length, and the axial dimensions are the same. The wall portion 150 is located between the portions of the refrigerant flow path 140 that radially overlap with each other. The wall portion 150 defines the refrigerant flow path 140 as a vortex shape centered on the central axis J.

[0101] The refrigerant flow path 140 has an outer peripheral flow path portion 141 with a constant width and an inner peripheral flow path portion 142 disposed radially inward of the outer peripheral flow path portion 141. The outer peripheral flow path portion 141 and the inner peripheral flow path portion 142 are connected to each other. In this embodiment, the inlet 140a is provided in the inner peripheral flow path portion 142, and the outlet 140b is provided in the outer peripheral flow path portion 141. Therefore, in this embodiment, the refrigerant flows in the refrigerant flow path 40 in the order of the inner peripheral flow path portion 142 and the outer peripheral flow path portion 141.

[0102] The outer peripheral flow path 141 is disposed at the outermost periphery of the refrigerant flow path 140. The outer peripheral flow path 141 extends in an arc shape relative to the central axis J, for example, approximately 6 / 10 to 9 / 10 of the circumference, or approximately 7 / 10 to 8 / 10 of the circumference, and specifically, approximately 3 / 4 of the circumference. An inner peripheral flow path 142 is connected to one end of the outer peripheral flow path 141. An outlet 140b is provided at the other end of the outer peripheral flow path 141. Furthermore, when viewed axially, the outer peripheral flow path 141 preferably overlaps with the outer edge Wa of the plate-shaped sample W. As described above, the width dimension of the outer peripheral flow path 141 is the same throughout its entire length. Therefore, the cross-sectional area of ​​the flow path of the outer peripheral flow path 141 is the same throughout its entire length.

[0103] The inner peripheral flow path 142 has, sequentially from the inside, a first arcuate portion 142A, a second arcuate portion 142B, and a third arcuate portion 142C, each with a constant width. The inner peripheral flow path 142 also has a first connecting portion 143A, a second connecting portion 143B, and a third connecting portion 143C connecting the arcuate portions to each other, or connecting the outer peripheral flow path 141 to the second arcuate portion 142B. The first arcuate portion 142A, the second arcuate portion 142B, and the third arcuate portion 142C extend in an arc shape with the central axis J as the center. The first arcuate portion 142A, the second arcuate portion 142B, and the third arcuate portion 142C are arranged in a concentric circle with the central axis J as the center.

[0104] The first arc portion 142A is located at the innermost circumference of the inner circumference flow path portion 142. The first arc portion 142A extends in an arc shape relative to the central axis J for approximately 3 / 4 of the circumference. A first connecting portion 143A is connected to one end of the first arc portion 142A. Furthermore, a second connecting portion 143B is connected to the other end of the first arc portion 142A. The width dimension of the first arc portion 142A is the same throughout its entire length. Therefore, the flow path cross-sectional area of ​​the first arc portion 142A is the same throughout its entire length.

[0105] The second arc portion 142B is located radially outside the first arc portion 142A. The second arc portion 142B is radially positioned between the first arc portion 142A and the third arc portion 142C. The second arc portion 142B extends in an arc shape relative to the central axis J for approximately 3 / 4 of its circumference. A first connecting portion 143A is connected to one end of the second arc portion 142B. A third connecting portion 143C is connected to the other end of the second arc portion 142B. The width of the second arc portion 142B is the same throughout its entire length. Therefore, the flow path cross-sectional area of ​​the second arc portion 142B is the same throughout its entire length.

[0106] The third arc portion 142C is located radially outside the second arc portion 142B. The third arc portion 142C is radially positioned between the second arc portion 142B and the outer peripheral flow path portion 141. The third arc portion 142C extends in an arc shape relative to the central axis J for approximately 3 / 4 of its circumference. A second connecting portion 143B is connected to one end of the third arc portion 142C. Furthermore, a flow inlet 140a is provided at the other end of the third arc portion 142C. The width dimension of the third arc portion 142C is the same throughout its entire length. Therefore, the cross-sectional area of ​​the flow path of the third arc portion 142C is the same throughout its entire length.

[0107] The width dimension D2 of the second arc portion 142B is smaller than the width dimension D1 of the first arc portion 142A (D2 < D1). Furthermore, the width dimension D3 of the third arc portion 142C is smaller than the width dimension D2 of the second arc portion 142B (D3 < D2). That is, among the multiple arc portions 142A, 142B, and 142C, the arc portion located further radially outward than the others has a smaller radial dimension (width) compared to the other arc portions located on the inner side (D3 < D2 < D1). Moreover, the width dimension D4 of the outer peripheral flow path portion 141 is larger than the width dimension at any position of the inner peripheral flow path portion 142 (D4 > D1, D4 > D2, D4 > D3). In other words, the width dimension D4 of the outer peripheral flow path portion 141 is larger than the width dimensions D1, D2, and D3 of the inner peripheral flow path portion 142.

[0108] The first connecting portion 143A connects one end of the first arcuate portion 142A and one end of the second arcuate portion 142B. In this embodiment, one end of the first arcuate portion 142A and one end of the second arcuate portion 142B are arranged side by side in the radial direction. The first connecting portion 143A connects the first arcuate portion 142A and the second arcuate portion 142B in a U-shape by folding back into a hairpin shape. The width of the first connecting portion 143A gradually decreases from the end on the side of the first arcuate portion 142A toward the end on the side of the second arcuate portion 142B.

[0109] The first connecting portion 143A has curved and opposite side surfaces, namely, an inner corner surface 144 and an outer corner surface 145. The inner corner surface 144 is a semi-circular arc surface centered at point C1. The outer corner surface 145 is a semi-circular arc surface centered at point C2. The radius of curvature of the inner corner surface 144 is smaller than that of the outer corner surface 145. Furthermore, the center points C1 of the inner corner surface 144 and C2 of the outer corner surface 145 are located at different positions. That is, the inner corner surface 144 and the outer corner surface 145 are arc surfaces with different centers. Thus, the first connecting portion 143A smoothly connects the first arc portion 142A and the second arc portion 142B, which have different width dimensions.

[0110] The second connecting portion 143B connects the other end of the first arc portion 142A and one end of the third arc portion 142C. The second connecting portion 143B connects the first arc portion 142A and the third arc portion 142C in a hairpin-like manner. The second connecting portion 143B extends along the first connecting portion 143A with a radius of curvature larger than that of the first connecting portion 143A. The width of the second connecting portion 143B gradually decreases from the end on the side of the first arc portion 142A toward the end on the side of the third arc portion 142C. The second connecting portion 143B smoothly connects the first arc portion 142A and the third arc portion 142C through inner and outer corner surfaces having the same relationship as the first connecting portion 143A.

[0111] The third connecting portion 143C connects the other end of the second arc portion 142B and one end of the outer peripheral flow path portion 141. The third connecting portion 143C connects the second arc portion 142B and the outer peripheral flow path portion 141 in a hairpin-like manner. The third connecting portion 143C extends along the second connecting portion 143B with a radius of curvature larger than that of the second connecting portion 143B. The width of the third connecting portion 143C gradually increases from the end on the side of the second arc portion 142B toward the end on the side of the outer peripheral flow path portion 141. The third connecting portion 143C smoothly connects the second arc portion 142B and the outer peripheral flow path portion 141 through inner and outer corner surfaces having the same relationship as the first connecting portion 143A.

[0112] (Wall area)

[0113] The wall portion 150 has, from its inner side, a first arcuate wall 150A, a second arcuate wall 150B, and a third arcuate wall 150C, each with a constant width. The first arcuate wall 150A, the second arcuate wall 150B, and the third arcuate wall 150C extend in an arc shape around the central axis J. Furthermore, the first arcuate wall 150A, the second arcuate wall 150B, and the third arcuate wall 150C are arranged in a concentric circle around the central axis J.

[0114] The first arc wall 150A extends in an arc shape about 3 / 4 of its circumference relative to the central axis J. The first arc wall 150A is located radially between and defines the first arc portion 142A and the second arc portion 142B. The radial dimension of the first arc wall 150A is the same throughout its entire length.

[0115] The second arc wall 150B extends in an arc shape relative to the central axis J for approximately 3 / 4 of the circumference. The second arc wall 150B is located radially between and defines the second arc portion 142B and the third arc portion 142C. The radial dimension of the second arc wall 150B is the same throughout its entire length.

[0116] The third arc wall 150C extends in an arc shape relative to the central axis J for approximately 3 / 4 of the circumference. The third arc wall 150C is located radially between and defines the third arc portion 142C and the outer peripheral flow path portion 141. The radial dimension of the third arc wall 150C is the same throughout its entire length.

[0117] The radial dimension E2 of the second arc wall 150B is smaller than the radial dimension E1 of the first arc wall 150A (E2 < E1). Furthermore, the radial dimension E3 of the third arc wall 150C is smaller than the radial dimension E2 of the second arc wall 150B (E3 < E2). That is, among the plurality of arc walls 150A, 150B, and 150C, the arc wall located further radially outward than the others has a smaller radial dimension (E3 < E2 < E1) compared to the other arc walls. Additionally, the wall portion 150 preferably has a circular wall portion located at its center surrounded by the first arc portion 142A, a generally semi-circular wall portion surrounded by the first connecting portion 143A, a wall portion located between the first connecting portion 143A and the second connecting portion 143B, and a wall portion located between the second connecting portion 143B and the third connecting portion 143C.

[0118] In this modified refrigerant flow path 140, a first flow path portion 140N having the aforementioned relationship and a second flow path portion 140W connected to the first flow path portion 140N can also be provided near the through hole 80, similar to the embodiment described above. With this structure, the flow path cross-sectional area becomes narrower around the through hole 80. Therefore, relative to the second flow path portion 140W with its larger cross-sectional area, the refrigerant flow rate in the refrigerant flow path 140 increases in the first flow path portion 140N with its smaller cross-sectional area, thus improving the cooling performance in the first flow path portion 140N. As a result, an electrostatic chuck device 1 with high heat uniformity can be provided.

[0119] Furthermore, according to the base 103 of this modified example, similarly to the above embodiment, the cross-sectional area of ​​the inner peripheral flow path 142 decreases as it moves away from the central axis J, thereby increasing the flow velocity as it moves away from the central axis J. This improves the cooling capacity in the region away from the central axis J and enhances the heat uniformity of the mounting surface 11a of the electrostatic chuck 2. Also, according to the base 103 of this modified example, similarly to the above embodiment, the cross-sectional area of ​​the outer peripheral flow path 141 is larger than that of the inner peripheral flow path 142. This allows for sufficient cooling of the electrostatic chuck 2.

[0120] The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but of course, the present invention is not limited to these examples. The shapes or combinations of the constituent components shown in the above examples are just one example, and various modifications can be made according to design requirements, etc., without departing from the spirit of the present invention.

[0121] For example, in the above embodiments and variations, the cross-sectional area of ​​the inner peripheral flow path portions 42 and 142 decreases as they move away from the central axis J, and the cross-sectional area of ​​the outer peripheral flow path portions 41 and 141 is larger than that of the inner peripheral flow path portions 42 and 142, but this is not a limitation. For example, even if the cross-sectional areas of the outer peripheral flow path portions 41 and 141 and the inner peripheral flow path portions 42 and 142 are set to be constant, the structure shown above can be applied around the through hole 80.

[0122] Furthermore, the case where the refrigerant flow path has a rectangular cross-section and the axial dimension is the same throughout its entire length has been described, but the cross-sectional shape of the refrigerant flow path is not limited to the above embodiment. For example, the cross-sectional area of ​​the refrigerant flow path can be changed by varying the axial dimension.

[0123] Label Explanation

[0124] 1-Electrostatic chuck device

[0125] 2-Electrostatic Chuck Section

[0126] 3. 103-Base

[0127] 3a-Support Surface

[0128] 3b-bottom surface

[0129] 4-Adhesive

[0130] 5-Heating element

[0131] 8-Adhesive layer

[0132] 11-Placement plate

[0133] 11a-Placement Surface

[0134] 11b - Multiple protrusions

[0135] 12-Support Plate

[0136] 13-Electrode for electrostatic adsorption

[0137] 14-Insulation material layer

[0138] 17-Peripheral Wall

[0139] 31g - Groove

[0140] 35-Upper component

[0141] 36-Lower side component

[0142] 40, 140 - Refrigerant Flow Path

[0143] 40a, 140a-the inlet of the flow path

[0144] 40b, 140b - Outlet of the flow path

[0145] 40g, 40h - Inner surface of the second flow path

[0146] 40j, 40k - Connection surface between the first flow path and the second flow path

[0147] 40N, 140N-First flow path part

[0148] 40W, 140W - Second Flow Section

[0149] 40s - First inner side of the first flow path

[0150] 40t - Second inner side of the first flow path section

[0151] 41, 141-Peripheral flow path part

[0152] 42, 142 - Inner Circulation Path Section

[0153] 50, 150 - Wall section

[0154] 50A - Inner peripheral region

[0155] 50B - Peripheral area

[0156] 80-Through Hole

[0157] 80f - Inner circumferential surface of hole

[0158] 142A - First Circular Arc Section (Flow Path Section)

[0159] 142B - Second Arc Section (Flow Path Section)

[0160] 142C - Third Arc Section (Flow Path Section)

[0161] 143A - First Connecting Section (Flow Path Section)

[0162] 143B - Second Connecting Section (Flow Path Section)

[0163] 143C - 3rd Connecting Section (Flow Path Section)

[0164] 144 - Interior corner face of the first connection

[0165] 145 - The outer corner of the first connecting part

[0166] 150-wall section

[0167] 150A - First Circular Arc Wall (Wall Section)

[0168] 150B - Second Circular Arc Wall (Wall Section)

[0169] 150C - Third Circular Arc Wall (Wall Section)

[0170] C1, C2 - Center Point

[0171] D1 - Width dimension of the first arc portion

[0172] D2 - Width dimension of the second arc

[0173] D3 - Width dimension of the 3rd arc

[0174] D4 - Width dimension of the outer peripheral flow path

[0175] E1 - Radial dimension of the first circular arc wall

[0176] E2 - Radial dimension of the second circular arc wall

[0177] E3 - Radial dimension of the third circular arc wall

[0178] Dx - Axial dimension of the refrigerant flow path

[0179] J-Center Axis

[0180] L1 - Double-dotted line

[0181] P1 - The wall portion surrounding the through hole

[0182] P2 - The part where the refrigerant flow path is formed

[0183] T-thickness

[0184] W-plate-shaped specimen

[0185] Wa - Outer edge of plate-shaped sample

[0186] Wn - Width dimension

[0187] Ww-width dimension

[0188] θ - Angle centered on the center of the through hole

Claims

1. An electrostatic chuck device, comprising: The plate-shaped electrostatic chuck portion has a mounting surface for placing plate-shaped samples and contains electrostatic adsorption electrodes inside; and The base is disc-shaped, centered on the central axis, and the electrostatic chuck portion is supported on its supporting surface from the side opposite to the mounting surface. The base has: At least one through hole, axially penetrating the base along the central axis; and A refrigerant flow path is disposed inside the base and extends along the support surface. The refrigerant flow path has the following characteristics: First-tier route department; and The second flow path section is connected to both ends of the first flow path section. The first flow path is formed around the through hole, spaced apart from the through hole in the diameter direction of the through hole. The second flow path is located on both sides of the first flow path in the extending direction of the refrigerant flow path. The cross-sectional area of ​​the first flow path is smaller than that of the second flow path.

2. The electrostatic chuck device according to claim 1, wherein, Compared to the second flow path, the width of the first flow path is smaller in the direction intersecting the axial direction and the extending direction.

3. The electrostatic chuck device according to claim 1 or 2, wherein, The cross-sectional area of ​​the first flow path is 0.5 times or more and less than 1.0 times that of the cross-sectional area of ​​the second flow path.

4. The electrostatic chuck device according to claim 1 or 2, wherein, The first flow path portion has a first inner surface and a second inner surface that are opposite to each other. The first inner surface is formed at a distance from the through hole on the outer side of the through hole in the aperture direction, and faces outward in the aperture direction. The second inner surface is formed at a position further outward in the aperture direction than the first inner surface, spaced apart from the first inner surface, and faces inward in the aperture direction. The first inner surface is formed as an arc concentric with the inner circumferential surface of the through hole.

5. The electrostatic chuck device according to claim 4, wherein, The second inner surface is formed as an arc concentric with the inner circumferential surface of the through hole.

6. The electrostatic chuck device according to claim 5, wherein, When viewed from the axial direction, the first inner side and the second inner side are formed within a range of 20 to 300° with the through hole as the center.

7. The electrostatic chuck device according to claim 4, wherein, In the second flow path portion located on at least one side of the extending direction of the refrigerant flow path relative to the first flow path portion, a connecting surface that is curved into an arc shape when viewed from the axial direction is formed between the inner side of the second flow path portion connected to the first inner side.

8. The electrostatic chuck device according to claim 4, wherein, The thickness of the wall formed between the inner circumferential surface of the through hole and the first inner surface is more than 1 mm and less than 10 mm.

9. The electrostatic chuck device according to claim 1, wherein, The refrigerant flow path appears as a continuous vortex when viewed from above. The base also has a wall portion that demarcates the refrigerant flow path. The through hole is circular when viewed from above and penetrates at least a portion of the wall along the axial direction. The wall portion has a first portion with the through hole and a second portion located on both sides of the first portion without the through hole. When viewed from above, the width of the first part is greater than the width of the second part. The width of the first part gradually changes. The side of the first portion forms the inner side of the first flow path, and the side of the second portion forms the inner side of the second flow path.

Citation Information

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