Ink jet chip structure

Abstract

In order to improve the defects of mechanical strength, service life, energy saving performance and production yield in a two-layer inclined ladder-shaped framework at the junction of a heating resistor layer and a conducting layer in an existing ink-jet chip, the invention provides a novel ink-jet chip structure which comprises a substrate layer, a heating resistor, n protective layers and a plurality of connecting layers. Wherein the heating resistor is arranged on the substrate layer; the protection layer covers the heating resistor and is provided with a concave structure, the protection layer further comprises a first protection layer, the first protection layer is directly arranged on the heating resistor, the material of the first protection layer is an insulating material, and the material of the first protection layer is different from that of the rest (n-1) layers. In addition, the connecting layer is electrically connected with the heating resistor.

Description

Technical Field

[0001] This invention relates to an inkjet chip structure, and more specifically, to an inkjet chip structure that increases the overall device strength, electrical properties, and printing performance by improving the structure of the conductive layer and the heating resistance layer, as well as optimizing the upper structure and related specifications of the protective layer. Background Technology

[0002] Inkjet printing, commonly known as "Inkjet Printing," is a widely used printing technology whose history dates back to the 1950s when it was invented by the British company Hewlett-Packard. Since then, inkjet printing technology has developed rapidly, making inkjet printers the mainstream technology for home and commercial printing. Inkjet printers have many advantages, including: low cost, especially economical for home and small business use; high print quality, providing high-resolution and high-quality images, particularly for photos or pictures; ease of use, as inkjet printers are easy to install, and most can print via computer or mobile devices. Combined with the increasingly popular all-in-one office machines (including fax, photocopying, and scanning), they can quickly expand the flexibility of paperwork and packaging printing in the office or any other situation where needed.

[0003] The operating principle of an inkjet printer is to spray tiny ink droplets onto paper or recording media to output text or images. With the rapid development of digital imaging, the demand for high-resolution inkjet printing has increased. To control more droplets and provide higher print resolution, inkjet head technology has evolved from traditional single-point control to incorporating Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) control. For more details, please refer to [link to relevant documentation]. Figure 1 It shows an inkjet chip structure 100 in the present technology, which typically includes an nozzle 101, a barrier layer 103, a protective layer 104, a conductive layer 105, a heating resistor layer 106, and a thermal barrier layer 107, which are combined into a stacked structure to form the inkjet chip structure 100. An ink supply chamber 102 is located between the protective layer 104 and the barrier layer 103. A portion of the conductive layer 105 is formed on the heating resistor layer 106, such that the conductive layer 105 contacts the heating resistor layer 106 in a stepped, one- or two-layer inclined manner (e.g., ...). Figure 1 (As shown in the dashed circle), the heating resistor layer 106 can generate bubbles by heating the ink through the electrical energy supplied by the conductive layer 105, and finally eject the ink in the ink supply chamber 102 from the nozzle 101.

[0004] However, the current inkjet chip structure 100 is lacking in that its conductive layer 105 and heating resistor layer 106 are deposited by sputtering after the corresponding MOSFET control element is completed during the manufacturing process. The required size and shape are then defined by photolithography and etching processes. During the definition of the size range, the above-mentioned two inclined stepped structures are generated at the junction of the conductive layer 105 and the heating resistor layer 106 due to erosion. These two inclined stepped structures are prone to cause inherent structural problems such as stress concentration and poor step coverage in the inkjet chip structure 100.

[0005] Furthermore, during the printing process, the heating resistor layer 106 and conductive layer 105 at the bottom of the ink supply chamber 102, which are used to heat the ink, both need to operate under high current, high temperature, mechanical impact, and chemical corrosion of the ink. Since the two-layer inclined stepped structure of the heating resistor layer 106 and conductive layer 105 itself has poor physical mechanical strength, it is easy for cracks or holes to form at the junction of the steps in practice. This can further cause the nearby protective layer 104 to crack, resulting in ink seeping into the inkjet chip and damaging the components. This results in poor service life or reliability of the existing inkjet chip structure 100, which directly affects the performance of inkjet printing. Therefore, in the current market, there is still an urgent need to further explore the relationship between the known inkjet chip structure 100 and its corresponding specifications in terms of printing performance, production yield, and ease of manufacturing. Summary of the Invention

[0006] Based on the above reasons, the purpose of this invention is to improve the two-layer inclined stepped structure at the junction of the heating resistor layer and the conductive layer in the existing inkjet chip heating architecture. By integrating the two layers onto the same material, the stepped phenomenon can be eliminated when a protective layer is subsequently configured, thereby improving its mechanical strength, service life, and reliability. Furthermore, this invention improves the efficiency of the heating resistor layer in heating ink by optimizing the structure above the heating resistor layer and the dielectric layer, specifically by forming a recessed structure in the protective layer. Simultaneously, to facilitate the etching process, the protective layer has a multi-layered structure, with some layers being insulating materials to prevent damage to the control layer during manufacturing. This allows the invention to achieve significant improvements in energy efficiency in addition to physical structural strength, maintaining the quality of traditional inkjet printing while further considering energy saving and production yield. Overall, the improvements of this invention will further enhance the performance of inkjet chip structures in subsequent simultaneous printing, including dot count control, printing mode processing, vibrancy control, saturation control, energy saving, and production yield, due to better structural integration. It will also more effectively reduce manufacturing process requirements and additional manufacturing costs. Detailed technical proposals will be described later.

[0007] In an embodiment of the present invention, to achieve the above objectives, the present invention proposes an inkjet chip structure, comprising: a substrate layer for supporting the elements of the inkjet chip structure; a heating resistor disposed on the substrate layer for heating ink; and n protective layers covering the heating resistor, wherein the protective layers have a plurality of recessed structures, and the n protective layers further include a first protective layer directly disposed on the heating resistor, wherein the first protective layer is an insulating material; and a plurality of contact layers electrically connected to the heating resistor to control the heating of ink during printing, so as to make the heating resistor more efficient in obtaining energy, thereby enabling the inkjet chip structure to achieve energy saving, improved production yield, and extended service life.

[0008] According to the present invention, the aforementioned heating resistor further includes: a heating resistance layer; a dielectric layer, wherein the dielectric layer encapsulates the heating resistance layer therein; a first oxide layer disposed on a substrate layer; a conductive layer disposed on the first oxide layer; and a control layer partially covering the dielectric layer; wherein the aforementioned heating resistance layer is disposed on the first oxide layer, wherein the heating resistance layer is adjacent to and at the same horizontal position as the conductive layer, and covers a portion of the surface of the first oxide layer. Furthermore, the aforementioned dielectric layer partially covers the first oxide layer and encapsulates both the heating resistance layer and the conductive layer therein.

[0009] According to the present invention, a protective layer covers a dielectric layer and partially encloses a control layer in between. The height of the recessed structure formed by the aforementioned protective layer is defined by a first surface at the upper end of the protective layer and a second surface at the upper end of the first protective layer on the dielectric layer. Furthermore, the control layer receives a control signal from a signal terminal and is electrically connected to a conductive layer and a connecting layer to control the heating of ink by the heating resistor layer during the printing process.

[0010] According to the present invention, the aforementioned signal terminal may be an external signal terminal from outside the inkjet chip structure, or an internal signal terminal integrated within the inkjet chip structure. In one embodiment of the present invention, if it is an internal signal terminal, the internal signal terminal is a control transistor and is electrically connected to the control layer, so that the control transistor can control the heating resistor layer to heat the ink during the printing process.

[0011] According to the present invention, the control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET), wherein the control transistor may be selected from an N-type metal-oxide-semiconductor field-effect transistor (N-MOSFET) or a P-type metal-oxide-semiconductor field-effect transistor (P-MOSFET).

[0012] According to the present invention, in the aforementioned inkjet chip structure, the plurality of connection layers are disposed on the conductive layer and the control transistor, and are electrically connected to the control layer, so that the control transistor can control the heating resistor layer to heat the ink during the printing process.

[0013] According to the present invention, when the control transistor is a MOSFET, the control transistor includes a source, a drain, and a gate. The source and drain are embedded in a substrate layer, and the gate is disposed on the substrate layer, thereby controlling the opening and closing of the source and drain to control the operation of the control transistor.

[0014] According to the present invention, the gate further includes a second oxide layer and a polysilicon layer, which are stacked sequentially on the substrate layer. Attached Figure Description

[0015] The following detailed description of the invention and the illustrated embodiments are intended to enable a fuller understanding of the invention; however, it should be understood that this is limited to providing a reference for understanding the application of the invention and not to limiting the invention to a particular embodiment.

[0016] Figure 1 This shows the structure of an inkjet chip in a known technology.

[0017] Figure 2A The stacking structure of the inkjet chip of the present invention is described.

[0018] Figure 2B The structure of the heating resistor of the present invention is described.

[0019] Figure 3 This invention explains how the conductive layer is integrated with the heating resistance layer to avoid the absence of the two-layer inclined stepped structure in the prior art. It also explains how the structure of the protective layer is optimized in this invention to improve the heating resistance layer's efficiency in heating ink and enhance energy efficiency.

[0020] [Symbol Explanation]

[0021] 100: Inkjet chip structure

[0022] 101: Spray nozzle

[0023] 102: Ink Supply Chamber

[0024] 103: Barrier layer

[0025] 104: Protective layer

[0026] 105: Conductive layer

[0027] 106: Heating resistance layer

[0028] 107: Thermal barrier

[0029] 200: Inkjet chip structure

[0030] 201: Substrate layer

[0031] 202: First oxide layer

[0032] 203: Dielectric layer

[0033] 204: Conductive layer

[0034] 205: Heating resistance layer

[0035] 206: Connection Layer

[0036] 207: Control Layer

[0037] 208: Protective layer

[0038] 208A: First protective layer

[0039] 208B: Second protective layer

[0040] 208C: Third protective layer

[0041] 209: Control Transistor

[0042] 209A: Second oxide layer

[0043] 209B: Polycrystalline silicon layer

[0044] 300: Heating resistor

[0045] A: First surface

[0046] B: Second surface

[0047] S: Source

[0048] D: Jiji

[0049] G: Gate Detailed Implementation

[0050] This invention will be described in detail with reference to preferred embodiments and viewpoints. The following description provides specific implementation details of the invention to enable the reader to fully understand how these embodiments are implemented. However, those skilled in the art will understand that the invention can also be implemented without these details. Furthermore, the invention can be used and implemented through other specific embodiments, and the various details set forth in this specification can be applied based on different needs, and various modifications or changes can be made without departing from the spirit of the invention. Therefore, this invention will be described with reference to preferred embodiments and viewpoints. Such descriptions are for explaining the structure of the invention and are for illustrative purposes only, not for limiting the scope of the patent application.

[0051] Please see Figure 2A , Figure 2B ,as well as Figure 3To improve upon known technologies, this invention presents a novel inkjet chip structure 200, comprising: a substrate layer 201 supporting the elements of the inkjet chip structure 200; a heating resistor 300 disposed on the substrate layer 201 for heating ink; and n protective layers 208 covering the heating resistor 300, the protective layers 208 having recessed structures, the n protective layers 208 having a first protective layer 208A directly disposed on the heating resistor 300, the first protective layer 208A being an insulating material; and several connecting layers 206 electrically connected to the heating resistor 300 to control the heating of ink during printing, thereby making the heating resistor 300 more efficient in acquiring energy, and enabling the inkjet chip structure 200 to achieve energy saving, improved production yield, and extended service life. The heating resistor 300 further includes a heating resistor layer 205 and a conductive layer 204. According to one aspect of the present invention, since the heating resistor layer 205 and the conductive layer 204 are integrated into one layer in the heating resistor 300 of the present invention, compared with the prior art, the bonding strength and physical strength between components are improved, effectively preventing ink penetration. In addition, in order to meet the etching requirements in the process of fabricating the recessed structure of the inkjet chip structure 200, the provision of a first protective layer 208A using insulating material can prevent damage to the underlying heating resistor 300 during the etching process, thereby improving the yield. With the recessed structure configuration of the present invention, the ink is closer to the heating resistor layer 205 than in the prior art, so the heating resistor layer 205 does not require an excessive voltage (or current) supply to heat the ink to generate bubbles and squeeze the ink to generate ink droplets. Meanwhile, because of the lower energy consumption, the heating resistance layer 205 is less damaged by the power pulses from repeated switching of the power supply, resulting in a longer service life and energy saving. The height of the recessed structure is defined by the first surface A at the top of the protective layer 208 and the second surface B of the first protective layer 208A disposed on the dielectric layer 203. Thus, the configuration of the first protective layer 208A and the recessed structure in this invention achieve the aforementioned objective of the invention as a whole. According to the embodiments of this invention, the material of the first protective layer 208A can be selected from insulating materials such as silicon carbide (SiC) and silicon nitride (Si3N4), and is not limited to them. It should be noted that the n-layer protective layer 208 described in this invention can be configured as a first protective layer 208A, a second protective layer 208B, a third protective layer 208C, ... an nth protective layer, as needed for the application, and can be collectively referred to as protective layer 208. Those skilled in the art can understand this invention after reading it and with the help of the relevant drawings and text descriptions, which are described here.

[0052] According to the present invention, the heating resistor 300 further includes: a first oxide layer 202 disposed on a substrate layer 201; a conductive layer 204 disposed on the first oxide layer 202; and a control layer 207 partially covering the dielectric layer 203, receiving a control signal from a signal terminal, and electrically connected to the conductive layer 204 and the connection layer 206 to control the heating of ink by the heating resistor layer 205 during the printing process. Furthermore, the aforementioned heating resistor layer 205 is disposed on the first oxide layer 202, adjacent to and in contact with the conductive layer 204 at the same horizontal position, and covers a portion of the surface of the first oxide layer 202. The aforementioned dielectric layer 203 partially covers the first oxide layer 202, enclosing the heating resistor layer 205 and the conductive layer 204 therein. Further, in the inkjet chip structure 200, a protective layer 208 covers the dielectric layer 203, enclosing the control layer 207 in the middle, and a recessed structure is formed (opened) on the first protective layer 208A.

[0053] According to an embodiment of the present invention, the protective layer 208 can be configured with an appropriate number of layers according to the needs of the application. In one embodiment of the present invention, it can be three layers, namely, those shown in FIG2 and Figure 3 The invention comprises a first protective layer 208A, a second protective layer 208B, and a third protective layer 208C, stacked sequentially from bottom to top. It should be noted that these three layers are merely an example; those skilled in the art, after reading this invention, can set an appropriate number of protective layers 208 (as mentioned above, n layers), meaning the first protective layer 208A, the second protective layer 208B, the third protective layer 208C, ..., the nth protective layer. The upper end of the protective layer 208, i.e., the upper end of the third protective layer 208C, is divided into a first surface A, and the material of the first protective layer 208A is different from the remaining n-1 layers.

[0054] According to the present invention, the aforementioned signal terminal can be an external signal terminal from outside the inkjet chip structure 200, or an internal signal terminal integrated within the inkjet chip structure 200. In one embodiment of the present invention, if it is an internal signal terminal, the internal signal terminal is a control transistor 209, electrically connected to the control layer 207, so that the control transistor 209 can control the heating resistor layer 205 to heat the ink during the printing process. The control layer 207 is electrically connected to the control transistor 209, so that the control transistor 209 can control the heating resistor layer 205 to heat the ink during the printing process. The aforementioned control transistor 209 can be a metal-oxide-semiconductor field-effect transistor (MOSFET). When the control transistor 209 is a MOSFET, it includes a source (S), a drain (D), and a gate (G). The source (S) and drain (D) are embedded in the substrate layer 201, and the gate (G) is disposed on the substrate layer 201 and controls the opening and closing of the source (S) and drain (D), thereby controlling the operation of the control transistor 209. According to one embodiment of the present invention, the gate (G) further includes a second oxide layer 209A and a polysilicon layer 209B, which are sequentially stacked on the substrate layer 201.

[0055] According to an embodiment of the present invention, when the control transistor 209 is a MOSFET, the control transistor 209 can be selected from an N-type metal-oxide-semiconductor field-effect transistor (N-MOSFET) or a P-type metal-oxide-semiconductor field-effect transistor (P-MOSFET). When the inkjet chip structure 200 contains a plurality of control transistors 209, the MOSFET described in the present invention can also be any combination of N-MOSFET or P-MOSFET.

[0056] According to one embodiment of the present invention, when the control transistor 209 is a MOSFET, the polysilicon layer 209B of the gate G, the heating resistance layer 205, and the conductive layer 204 can be made of the same material, such as a polycrystalline silicon material, but with different doping ratios. According to one aspect of the present invention, based on the need for a two-layer inclined stepped structure in the improved heating structure, and considering the differences in resistance values ​​of the gate G, heating resistance layer 205, and conductive layer 204 that still require individual adjustment according to the actual application requirements, the heating resistance layer 205 and conductive layer 204 in the inkjet chip structure 200 are manufactured by forming the aforementioned polycrystalline silicon material on the first oxide layer 202, then defining the size and position of the polycrystalline silicon material by photoresist masking to form the heating resistance layer 205, and finally doping the unmasked area of ​​the polycrystalline silicon material by ion implantation, ion diffusion, or other methods to improve conductivity and form the conductive layer 204. This allows the heating resistance layer 205 and conductive layer 204 to be formed simultaneously and located on the same layer (i.e., they are adjacent and in contact and located at the same horizontal position), thus avoiding the problem of inclined stepped structures at the interface caused by separate sputtering and etching of the two in the existing known structures.

[0057] As stated above, please refer to the following for further information. Figure 3 The heating resistor layer 205 in the heating resistor 300 is the heating plate area used to heat the ink required for inkjet printing. According to an embodiment of the present invention, the conductive layer 204 can be located on both sides adjacent to the heating resistor layer 205. During the doping process of the polycrystalline silicon material, the doping concentration can be in a high-low-high manner to form a structure with better conductivity-higher impedance-better conductivity, i.e., a structure of conductive layer 204-heating resistor layer 205-conductive layer 204. In this way, the conductive layer 204 and the heating resistor layer 205 can be located on the same layer as described above. When the inclined step problem of the two is eliminated, the mechanical strength is improved. When the subsequent dielectric layer 203 is formed on the two and covers the first oxide layer 202, the adhesion of the dielectric layer 203 and the protective layer 208 can be made more firm, thereby having better mechanical strength, service life and reliability. This makes the inkjet chip structure 200 more stable during operation, and avoids the film breaking and ink seepage. This achieves the purpose of improving the printing efficiency of the present invention, such as controlling the number of inkjet dots, processing the printing mode, controlling the vividness and controlling the saturation.

[0058] According to the present invention, the plurality of connection layers 206 included in the inkjet chip structure 200 are disposed above the source S and drain D of the conductive layer 204 and the control transistor 209, and are electrically connected to the control layer 207 used as a conductor, so that the control transistor 209 can control the heating resistor layer 205 to heat the ink during the printing process. In one embodiment of the present invention, the dielectric layer 203 can define the connection layers 206 by means of photolithography and etching using contact hole technology, so as to facilitate the connection of the control layer 207 used as a conductor. In the present invention, the material of the control layer 207 can be selected from aluminum-copper alloy (AlCu) or gold (Au) according to the application requirements. In the protective layer 208, the required through-holes (not shown) can also be defined by means of inter-hole technology according to the application requirements, and the material of the conductor can also be selected from aluminum-copper alloy (AlCu) or gold (Au).

[0059] According to another embodiment of the present invention, the heating resistance layer 205 can be formed by doping polycrystalline silicon material, or it can be selected from one of tantalum aluminide (TaAl), tantalum (Ta), tantalum nitride (TaN), tantalum disilicide (Si2Ta), carbon (C), silicon carbide (SiC), indium tin oxide (ITO), zinc oxide (ZnO), cadmium sulfide (CdS), hafnium diboride (HfB2), titanium-tungsten alloy (TiW), and titanium nitride (TiN).

[0060] According to another embodiment of the present invention, the control layer 207 may be selected from, in addition to the aforementioned aluminum-copper alloy (AlCu) and gold (Au), aluminum-silicon alloy (AlSi), palladium (Pd), palladium-silver alloy (PdAg), platinum (Pt), aluminum-silicon copper (AlSiCu), niobium (Nb), vanadium (V), hafnium (Hf), titanium (Ti), zirconium (Zr), and yttrium (Y).

[0061] According to an embodiment of the present invention, the aforementioned first oxide layer 202 is an electrically insulating and heat-insulating material, which may be selected from one of field oxide (FOX), silicon dioxide (SiO2), silicon nitride (Si3N4) and phosphosilicate glass (PSG).

[0062] According to an embodiment of the present invention, the protective layer 208, as described above, can be configured with an appropriate number of layers according to the needs of the application. In one embodiment of the present invention, it can be three layers, namely a first protective layer 208A, a second protective layer 208B, and a third protective layer 208C. The second protective layer 208B can be a passivation material, which is one of silicon dioxide (SiO2), titanium dioxide (TiO2), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), tantalum pentoxide (Ta2O5), rhenium heptaoxide (Re2O7), niobium pentoxide (Nb2O5), uranium pentoxide (U2O5), tungsten trioxide (WO3), and silicon oxynitride (Si4O5N3). The third protective layer 208C is a metallic material, which is one of tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), and tungsten nitride (TiW).

[0063] In one embodiment of the present invention, the resolution (Dots Per Inch) of the inkjet chip structure 200 can be set in the range of 150 DPI to 48000 DPI.

[0064] In summary, this invention provides an inkjet chip structure that utilizes existing inkjet chips in the prior art.

[0065] The heating architecture of the MJ25A-1351N_251367 1TWCN_Simplified Chinese version has been improved by placing the two inclined stepped structures at the junction of the heating resistor layer and the conductive layer on the same layer. At the same time, the size specifications of the recessed structure and the inkjet chip have been optimized based on the need to balance energy saving during printing and yield during production. Compared with known technologies, its mechanical strength, service life and reliability have been increased. Since the protective layer directly covers the heating resistor, the etching process during the process will not damage the heating resistor, thereby improving the yield. In addition, the recessed structure of the protective layer can improve the heating resistor layer's efficiency in heating ink and energy consumption. Furthermore, integrating the signal terminals used to control the inkjet chip internally, i.e., combining it with MOSFET control elements, can also benefit from the increased operational stability brought about by its increased mechanical strength. This allows the inkjet chip structure to further improve printing performance in subsequent simultaneous printing, such as dot count control, printing mode processing, vibrancy control, and saturation control. It can also effectively reduce manufacturing process requirements and additional manufacturing costs, making it highly industrially viable.

Claims

1. An inkjet chip structure, comprising: One substrate layer; A heating resistor is disposed on the substrate layer to heat the ink; n protective layers cover the heating resistor and have a recessed structure. The n protective layers also include a first protective layer directly disposed on the heating resistor. This first protective layer is an insulating material, and its material differs from the remaining n-1 protective layers. Multiple connecting layers are electrically connected to the heating resistor.

2. The inkjet chip structure as described in claim 1, wherein the heating resistor further comprises: A heating resistance layer; A dielectric layer partially covers the first oxide layer and encapsulates the heating resistance layer therein; A first oxide layer is disposed on the substrate layer; A conductive layer is disposed on the first oxide layer; as well as, A control layer partially covers the dielectric layer. The control layer receives control signals from the signal terminal and is electrically connected to the conductive layer and the plurality of connection layers. The heating resistance layer is disposed on the first oxide layer, and the heating resistance layer is adjacent to and in contact with the conductive layer at the same horizontal position, and covers a portion of the surface of the first oxide layer.

3. The inkjet chip structure as described in claim 1, wherein the insulating material of the first protective layer is selected from silicon carbide, silicon nitride, or any combination thereof.

4. The inkjet chip structure as described in claim 2, wherein the signal terminal is an internal signal terminal, and the internal signal terminal is a control transistor electrically connected to the control layer.

5. The inkjet chip structure as claimed in claim 4, wherein the plurality of connection layers are disposed on the conductive layer and the control transistor, and are electrically connected to the control layer.

6. The inkjet chip structure as described in claim 4, wherein the control transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET).

7. The inkjet chip structure as described in claim 6, wherein the metal-oxide-semiconductor field-effect transistor further comprises: The transistor comprises a source, a drain, and a gate; wherein the source and the drain are disposed in the substrate layer, and the gate is disposed on the substrate layer, thereby controlling the opening and closing of the source and the drain to enable the metal-oxide-semiconductor field-effect transistor to operate.

8. The inkjet chip structure as claimed in claim 4, wherein the material of the control layer is selected from aluminum-copper alloy (AlCu) or gold (Au).

9. The inkjet chip structure as claimed in claim 1, wherein the inkjet chip structure can print resolutions ranging from 150 DPI to 48000 DPI.

10. The inkjet chip structure as described in claim 2, wherein the material of the heating resistor layer is selected from polycrystalline silicon, tantalum aluminide (TaAl), tantalum (Ta), tantalum nitride (TaN), tantalum disilicide (Si2Ta), carbon (C), silicon carbide (SiC), indium tin oxide (ITO), zinc oxide (ZnO), cadmium sulfide (CdS), hafnium diboride (HfB2), titanium-tungsten alloy (TiW), and titanium nitride (TiN).

11. The inkjet chip structure as claimed in claim 1, wherein the n-layer protective layer further comprises a second protective layer and a third protective layer, the third protective layer, the second protective layer and the first protective layer being stacked sequentially from bottom to top.

12. The inkjet chip structure as claimed in claim 11, wherein the material of the second protective layer is selected from one or any combination of silicon dioxide (SiO2), titanium dioxide (TiO2), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), tantalum pentoxide (Ta2O5), rhenium heptaoxide (Re2O7), niobium pentoxide (Nb2O5), uranium pentoxide (U2O5), tungsten trioxide (WO3), and silicon oxynitride (Si4O5N3).

13. The inkjet chip structure as claimed in claim 11, wherein the material of the third protective layer is a metallic material selected from one or any combination of tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), and tungsten nitride (TiW).

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