Electrode preparation method, system and equipment based on water-oxygen sensitive two-dimensional material

Abstract

The invention provides an electrode preparation method, system and equipment based on a water-oxygen-sensitive two-dimensional material, and belongs to the technical field of two-dimensional material electrode preparation and film plating processing.The water-oxygen-sensitive two-dimensional material is arranged on a substrate, a mica mask is prepared, the mica mask is fixed to a first mask support, and then the water-oxygen-sensitive two-dimensional material is prepared; a first electrode groove is formed in the mica mask plate, the first mask plate support is fixed to the substrate, the substrate is evaporated, the first mask plate support is removed, a metal mask plate is prepared, the metal mask plate is fixed to the second mask plate support, and the metal mask plate is provided with a second electrode groove. The pattern of the first electrode groove is within the range of the pattern of the second electrode groove, fixing the second mask plate support on the substrate, evaporating the substrate, and removing the mica mask plate and the metal mask plate from the substrate to obtain the target electrode, so that the difficulty of preparing the electrode on the water-oxygen sensitive two-dimensional material can be reduced, and the yield of the water-oxygen sensitive two-dimensional material can be improved. And pollution caused by introduction of organic solvents such as photoresist is avoided in the preparation process.

Description

Technical Field

[0001] This application relates to the field of two-dimensional material electrode preparation and coating technology, and in particular to an electrode preparation method, system and equipment based on water and oxygen sensitive two-dimensional materials. Background Technology

[0002] Traditional electrode fabrication methods rely on mature microelectronic devices and integrated chip processing technologies, such as photolithography, electron beam lithography, and laser direct writing. However, these technologies can leave residual adhesive on the electrode surface, leading to surface contamination. Furthermore, two-dimensional materials are highly sensitive to oxygen and water molecules in the air, easily oxidizing and deteriorating, resulting in structural breakdown. These technologies cannot process easily hydrolyzed and oxidized two-dimensional materials, making the fabrication of electrodes on water- and oxygen-sensitive two-dimensional materials extremely challenging. Summary of the Invention

[0003] The main objective of this application is to propose a method, system, and device for preparing electrodes based on water-oxygen-sensitive two-dimensional materials, aiming to reduce the difficulty of preparing electrodes on water-oxygen-sensitive two-dimensional materials.

[0004] To achieve the above objectives, a first aspect of this application proposes a method for preparing an electrode based on a water-oxygen-sensitive two-dimensional material, the method comprising:

[0005] Prepare a substrate, on which a water- and oxygen-sensitive two-dimensional material is disposed;

[0006] A mica mask is prepared and fixed to a first mask support; wherein the mica mask has a first electrode groove.

[0007] The first mask holder is fixed on the substrate, and the substrate is vapor-deposited to form a solid deposition on the substrate through the first electrode trench;

[0008] Remove the first mask holder, prepare a metal mask, and fix the metal mask to the second mask holder; wherein the metal mask has a second electrode groove, and the pattern of the first electrode groove is within the range of the pattern of the second electrode groove;

[0009] The second mask holder is fixed on the mica mask, and the substrate is vapor-deposited to form a solid deposition on the substrate through the second electrode trench. The mica mask and the metal mask are removed from the substrate to obtain the target electrode.

[0010] In some embodiments, the preparation of the mica mask includes:

[0011] Obtaining fluorophlogopite;

[0012] An opening structure is provided on the first adhesion component, and the fluorophlogopite is cleaved onto the opening structure through the first adhesion component;

[0013] The first adhesive component is fixed to the first support structure;

[0014] The fluorophlogopite fixed to the first adhesive component of the first support structure is processed to obtain the mica mask.

[0015] In some embodiments, the fabrication of the metal mask includes:

[0016] A thin metal film is fixed onto a glass slide;

[0017] The second electrode groove is processed on the metal thin film;

[0018] The processed metal film is then cleaned in an acetone solution.

[0019] The cleaned metal film is fixed to the first surface of the second support structure by the second adhesion component, and the metal film on the first surface is adhered to the second surface of the second support structure by the third adhesion component to obtain the metal mask.

[0020] In some embodiments, fixing the first mask holder onto the substrate includes:

[0021] The substrate is placed on the first sample stage of the mounting system, and the first mask holder is placed on the second sample stage of the mounting system;

[0022] The imaging system of the mounting system aligns with the image of the water-oxygen-sensitive two-dimensional material on the substrate on the first sample stage and the image of the mica mask on the first mask holder on the second sample stage;

[0023] The lifting shaft of the second sample stage is moved to cover the mica mask on the first mask holder over the water-oxygen sensitive two-dimensional material.

[0024] In some embodiments, the evaporation of the substrate includes:

[0025] The substrate is placed on the plating tray, and the plating tray is placed inside the cavity of the thermal evaporation system;

[0026] A target material is placed inside the cavity, and the cavity is evacuated to a vacuum state.

[0027] The target material is heated by the thermal evaporation system so that the evaporated gaseous target material bundle is deposited and condensed on the substrate.

[0028] Inert gas is introduced into the cavity.

[0029] In some embodiments, fixing the second mask holder to the mica mask includes:

[0030] The substrate is placed on the first sample stage of the mounting system, and the second mask holder is placed on the second sample stage of the mounting system;

[0031] The imaging system of the mounting system aligns with the image of the mica mask on the substrate on the first sample stage and the image of the metal mask on the second mask holder on the second sample stage.

[0032] The lifting shaft of the second sample stage is moved to cover the mica mask with the metal mask on the second mask holder.

[0033] In some embodiments, after removing the mica mask and the metal mask from the substrate, the electrode fabrication method based on the water-oxygen-sensitive two-dimensional material further includes:

[0034] Connect the target electrode to the pins of the test base;

[0035] The connected target electrode is sealed in an environment filled with inert gas, and the target electrode is tested through the test base.

[0036] To achieve the above objectives, a second aspect of this application proposes an electrode fabrication system based on water-oxygen-sensitive two-dimensional materials, the system comprising: a femtosecond laser nano-displacement stage processing system, a femtosecond laser galvanometer scanning processing system, a mounting system, and a thermal evaporation system;

[0037] The femtosecond laser nano-displacement stage processing system is used to prepare a mica mask, the femtosecond laser galvanometer scanning processing system is used to prepare a metal mask, the mounting system is used to cover the mica mask on the substrate and cover the metal mask on the mica mask, and the thermal evaporation system is used to vapor-deposit the substrate.

[0038] To achieve the above objectives, a third aspect of the present application provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the method of the first aspect described above.

[0039] To achieve the above objectives, a fourth aspect of the present application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the method of the first aspect described above.

[0040] This application describes a method, system, electronic device, and computer-readable storage medium for fabricating electrodes based on water-oxygen-sensitive two-dimensional materials. The method involves preparing a substrate on which water-oxygen-sensitive two-dimensional materials are disposed to fabricate electrodes. A mica mask is prepared. Because the mica mask is thin and prone to breakage, it is fixed to a first mask support to improve its stability. To fabricate electrodes on the two-dimensional material, the mica mask has first electrode grooves. The first mask support is fixed to the substrate, and the substrate is vapor-deposited to form a solid-state deposition through the first electrode grooves, resulting in electrodes with relatively fine patterns. A metal mask is then prepared and fixed to a second mask support to support it and improve its stability. The metal mask has second electrode grooves, and the pattern of the first electrode grooves is within the pattern of the second electrode grooves to increase the electrode size. The second mask support is then fixed to the mica mask. The substrate is vapor-deposited to form a solid-state deposition on the substrate through a second electrode trench, thereby obtaining the target electrode. Furthermore, in this embodiment, the electrode is prepared in situ on the water-sensitive two-dimensional material, rather than preparing the electrode first and then attaching it to the two-dimensional material, thus reducing the contamination of the electrode surface by residual adhesive. Attached Figure Description

[0041] Figure 1 This is a flowchart of the electrode preparation method based on water-oxygen-sensitive two-dimensional materials provided in the embodiments of this application;

[0042] Figure 2 yes Figure 1 The flowchart of step S120 in the middle;

[0043] Figure 3 yes Figure 1 The flowchart of step S130 in the process;

[0044] Figure 4 yes Figure 1 Another flowchart of step S130 in the process;

[0045] Figure 5 yes Figure 1 The flowchart of step S140 in the middle;

[0046] Figure 6 yes Figure 1 The flowchart of step S150 in the middle;

[0047] Figure 7 This is another flowchart of the electrode preparation method based on water-oxygen-sensitive two-dimensional materials provided in the embodiments of this application;

[0048] Figure 8This is a schematic diagram of the electrode fabrication system based on water-oxygen-sensitive two-dimensional materials provided in the embodiments of this application;

[0049] Figure 9 This is a fixed gate voltage sweep magnetic field curve provided in an embodiment of this application;

[0050] Figure 10 This is a fixed magnetic field sweeping door voltage curve provided in the embodiments of this application;

[0051] Figure 11 This is the longitudinal resistance Landau sector diagram provided in the embodiments of this application;

[0052] Figure 12 This is a schematic diagram of the hardware structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0054] It should be noted that although functional modules are divided in the device schematic diagram and a logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than the module division in the device or the order in the flowchart. The terms "first," "second," etc., in the specification, claims, and the aforementioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0056] Traditional electrode fabrication methods rely on mature microelectronic devices and integrated chip processing technologies, such as photolithography, electron beam lithography, and laser direct writing. However, these technologies can leave residual adhesive on the electrode surface, leading to surface contamination. Furthermore, two-dimensional materials are highly sensitive to oxygen and water molecules in the air, easily oxidizing and deteriorating, resulting in structural breakdown. These technologies cannot process easily hydrolyzed and oxidized two-dimensional materials, making the fabrication of electrodes on water- and oxygen-sensitive two-dimensional materials extremely challenging.

[0057] Based on this, embodiments of this application provide a method for preparing electrodes based on water-oxygen-sensitive two-dimensional materials, an electrode preparation system based on water-oxygen-sensitive two-dimensional materials, an electronic device, and a computer-readable storage medium, aiming to reduce the difficulty of preparing electrodes on water-oxygen-sensitive two-dimensional materials.

[0058] The electrode preparation method, system, electronic device, and computer-readable storage medium based on water-oxygen-sensitive two-dimensional materials provided in this application are specifically described through the following embodiments. First, the electrode preparation method based on water-oxygen-sensitive two-dimensional materials in this application embodiment is described.

[0059] The electrode preparation method based on water-oxygen-sensitive two-dimensional materials provided in this application relates to the field of two-dimensional material electrode preparation and coating technology. The electrode preparation method based on water-oxygen-sensitive two-dimensional materials provided in this application can be applied to a terminal, a server, or software running on either a terminal or a server. In some embodiments, the terminal can be a smartphone, tablet, laptop, desktop computer, etc.; the server can be configured as an independent physical server, a server cluster or distributed system composed of multiple physical servers, or a cloud server providing basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communication, middleware services, domain name services, security services, CDN, and big data and artificial intelligence platforms; the software can be an application implementing the electrode preparation method based on water-oxygen-sensitive two-dimensional materials, but is not limited to the above forms.

[0060] This application can be used in a wide variety of general-purpose or special-purpose computer system environments or configurations. Examples include: personal computers, server computers, handheld or portable devices, tablet devices, multiprocessor systems, microprocessor-based systems, set-top boxes, programmable consumer electronics, network PCs, minicomputers, mainframe computers, and distributed computing environments including any of the above systems or devices. This application can be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc., that perform specific tasks or implement specific abstract data types. This application can also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0061] Figure 1 This is an optional flowchart of an electrode fabrication method based on a water-oxygen-sensitive two-dimensional material provided in this application embodiment. It is applied to an electrode fabrication system based on this material, which includes a femtosecond laser nano-displacement stage processing system, a femtosecond laser galvanometer scanning processing system, a mounting system, and a thermal evaporation system. Figure 1 The method may include, but is not limited to, steps S110 to S150.

[0062] Step S110: Prepare a substrate, on which a water- and oxygen-sensitive two-dimensional material is disposed;

[0063] Step S120: Prepare a mica mask and fix the mica mask to a first mask holder; wherein the mica mask has a first electrode groove;

[0064] Step S130: Fix the first mask plate support onto the substrate and vapor deposit the substrate to form a solid deposition on the substrate through the first electrode trench;

[0065] Step S140: Remove the first mask holder, prepare a metal mask, and fix the metal mask to the second mask holder; wherein, the metal mask has a second electrode groove, and the pattern of the first electrode groove is within the range of the pattern of the second electrode groove;

[0066] In step S150, the second mask holder is fixed on the mica mask, and the substrate is vapor-deposited to form a solid deposition on the substrate through the second electrode groove. The mica mask and the metal mask are then removed from the substrate to obtain the target electrode.

[0067] In step S110 of some embodiments, a substrate is prepared. The substrate is the base material used to support thin films, crystals, and other functional materials during electrode fabrication. The substrate material can be silicon, glass, etc. A mechanical exfoliation method is used, employing tools such as adhesive tape to repeatedly peel off the parent material, such as graphene, to obtain a single layer or a few atomic layers of two-dimensional material. The exfoliated two-dimensional material is then transferred onto the substrate to obtain a water-oxygen-sensitive two-dimensional material. A water-oxygen-sensitive two-dimensional material refers to a two-dimensional material sensitive to oxygen and water molecules in the air. Two-dimensional materials have layered characteristics, allowing for the fabrication of homojunctions, heterojunctions, and twisted junctions from different two-dimensional materials. Electrical characterization of two-dimensional materials requires the fabrication of metal electrodes on the surface of the two-dimensional material to study its electrical transport properties. The surface morphology and lattice defects of two-dimensional materials greatly affect their external properties. Due to the influence of monolayer thickness, most two-dimensional materials are very sensitive to oxygen and water molecules in the air. Two-dimensional materials are prone to oxidation and deterioration, leading to structural disintegration. Therefore, maintaining the structural integrity and surface cleanliness of sensitive two-dimensional materials at the atomic scale is an urgent problem to be solved in the study of their microstructure.

[0068] Traditional electrode fabrication methods rely on mature microelectronic devices and integrated chip processing technologies, such as photolithography, electron beam lithography, and laser direct writing. While these techniques produce electrodes with high integration, precision, and repeatability, they also have several drawbacks. For example, photolithography requires custom-made photomasks, which are time-consuming and expensive to prepare. Electron beam lithography and laser direct writing are inefficient and costly. All these methods leave adhesive residue on the electrode surface, leading to contamination, and they cannot process easily hydrolyzed or oxidized materials, making electrode fabrication on water- and oxygen-sensitive two-dimensional materials particularly challenging. Furthermore, dry transfer of two-dimensional materials to pre-fabricated electrodes has a low success rate and also results in adhesive residue on the electrode surface.

[0069] To address the shortcomings of existing electrode fabrication methods, this application's embodiments overcome the bottlenecks of existing electrode fabrication processes, avoid over-reliance on complex processes from the microelectronics fabrication field, and perform in-situ electrode fabrication for water- and oxygen-sensitive two-dimensional materials, thereby improving the effectiveness, accuracy, and efficiency of quantum and materials research experiments.

[0070] Mica masks are fabricated based on the size and shape of water- and oxygen-sensitive two-dimensional materials. Due to the fragility of the mica mask, it is fixed to a first mask support. This first support supports and protects the mica mask, reducing the possibility of deformation due to thermal expansion and contraction or chemical corrosion, and improving its stability. The fabrication method of the mica mask is described in detail below.

[0071] Please see Figure 2 In some embodiments, step S120 may include, but is not limited to, steps S210 to S240:

[0072] Step S210: Obtain fluorophlogopite;

[0073] Step S220: An opening structure is provided on the first adhesive component, and fluorophlogopite is cleaved onto the opening structure through the first adhesive component;

[0074] Step S230: Fix the first adhesive component to the first support structure;

[0075] Step S240: The fluorophlogopite fixed to the first adhesive component of the first support structure is processed to obtain a mica mask.

[0076] In step S210 of some embodiments, fluorophlogopite is heat-resistant and can operate for extended periods at 1100°C, exhibiting thermal stability. Furthermore, fluorophlogopite has good flatness, reaching the atomic level, making it resistant to deformation and possessing high tensile and compressive strength. To improve the precision of electrode fabrication, embodiments of this application utilize mechanical exfoliation to obtain micron-thickness fluorophlogopite for fabricating micron-scale electrodes.

[0077] In step S220 of some embodiments, an opening structure is formed on the first adhesion component using a femtosecond laser nano-displacement stage processing system. The first adhesion component is a component capable of adhering fluorophlogopite, such as adhesive tape, polyimide film, or polytetrafluoroethylene film. The opening structure is a structure on the first adhesion component with open channels, holes, or spaces. The shape and size of the opening structure can be set according to actual conditions; the shape can be circular, square, or grooved, and the size can be on the micrometer scale. Fluoroplogopite can be cleaved onto the first adhesion component with the opening structure by mechanical peeling, so that the fluorophlogopite film can be exposed through the opening structure.

[0078] In step S230 of some embodiments, to facilitate the processing of the fluorophlogopite on the first adhesive component, the first adhesive component is fixed to the first support structure to provide additional support. The shape of the first support structure can be set according to the actual situation, such as a ring, and perforated tape covered with fluorophlogopite can be attached to the ring-shaped first support structure.

[0079] In step S240 of some embodiments, fluorophlogopite fixed to the first adhesive component of the first support structure is processed using a femtosecond laser nano-displacement stage processing system to fabricate an electrode pattern on the fluorophlogopite, thus obtaining a mica mask. The mica mask has a first electrode groove, which is a cut-out area on the mica mask and can be of any shape, such as symmetrically arranged, to ensure a more uniform current distribution on the electrode surface. The mica mask needs to match the size and shape of the two-dimensional material, and its area needs to be larger than that of the two-dimensional material. It should be noted that if the size of the two-dimensional material is large, step S130 can be skipped, and step S140 can be performed directly to fabricate a large electrode on the water- and oxygen-sensitive two-dimensional material.

[0080] Through the above steps S210 to S240, a micron-sized mica mask can be obtained, which can be used to prepare a finer electrode.

[0081] The initial mounting process is performed using a mounting system. A first mask holder, containing a mica mask, is mounted and fixed onto the water- and oxygen-sensitive two-dimensional material, ensuring the mica mask covers the material. The specific process of this initial mounting is described in detail below.

[0082] Please see Figure 3 In some embodiments, step S130 may include, but is not limited to, steps S310 to S330:

[0083] Step S310: Place the substrate on the first sample stage of the mounting system and place the first mask holder on the second sample stage of the mounting system.

[0084] Step S320: Align the image of the water-oxygen sensitive two-dimensional material on the substrate on the first sample stage with the image of the mica mask on the first mask holder on the second sample stage through the imaging system of the mounting system;

[0085] Step S330: Move the lifting axis of the second sample stage to cover the mica mask on the first mask holder over the water- and oxygen-sensitive two-dimensional material.

[0086] In step S310 of some embodiments, the mounting system includes two electrically driven stages and an imaging system. The two electrically driven stages are a first sample stage and a second sample stage, respectively. The first sample stage is used to fix the two-dimensional material and includes three translational degrees of freedom, allowing the two-dimensional material to move independently along the x, y, and z axes. The second sample stage includes three translational degrees of freedom (x, y, z) and one rotational degree of freedom (θ), and can be used with the imaging system to mount the mask and the two-dimensional material at the same position. Specifically, a substrate containing a water-oxygen-sensitive two-dimensional material is placed on the first sample stage, and with the help of the imaging system, the image of the two-dimensional material in the imaging system is moved to the center of the field of view. A first mask holder containing a mica mask is placed on the second sample stage. The imaging system is a microscopic imaging system.

[0087] In step S320 of some embodiments, the image of the water-oxygen-sensitive two-dimensional material on the substrate on the first sample stage is aligned with the image of the mica mask on the first mask holder on the second sample stage using a microscopic imaging system.

[0088] In step S330 of some embodiments, the lifting axis, i.e. the z-axis, of the second sample stage is moved to cover the mica mask over the water- and oxygen-sensitive two-dimensional material, and the second sample stage is raised to place a new sample.

[0089] Through the above steps S310 to S330, a mica mask can be applied to a water-oxygen-sensitive two-dimensional material to prepare a finer electrode on the water-oxygen-sensitive two-dimensional material.

[0090] After a mica mask is placed over the water- and oxygen-sensitive two-dimensional material, a substrate containing the water- and oxygen-sensitive two-dimensional material and the mica mask is deposited using a thermal evaporation system to form a solid deposition on the substrate through the hollowed-out area indicated by the first electrode trench. The specific evaporation process is described in detail below.

[0091] Please see Figure 4 In some embodiments, step S130 may also include, but is not limited to, steps S410 to S440:

[0092] Step S410: Place the substrate on the plating tray and place the plating tray into the cavity of the thermal evaporation system;

[0093] Step S420: Place the target material inside the cavity and evacuate the cavity to a vacuum state;

[0094] Step S430: The target material is heated by a thermal evaporation system so that the evaporated gaseous target material bundle is deposited and condensed on the substrate.

[0095] Step S440: Inert gas is introduced into the cavity.

[0096] In step S410 of some embodiments, a substrate containing a layered structure of water-oxygen sensitive two-dimensional material and mica mask is fixed on a plating pad using tools such as high-temperature double-sided tape and sample clamps, and the plating pad is placed in a cavity connected to a glove box within the thermal evaporation system, with the mounting system located inside the glove box.

[0097] In step S420 of some embodiments, the required target material is placed in the cavity according to the coating process requirements. To ensure the efficiency and quality of electrode evaporation, the cavity is evacuated to a vacuum state to avoid chemical reactions between the target material and gas molecules in the air during the heating process. In a vacuum environment, the atoms or molecules of the target material after evaporation can move more freely, reducing collisions with gas molecules, thereby depositing more uniformly on the substrate.

[0098] In step S430 of some embodiments, the evaporation parameters of the thermal evaporation system are set, and the target material is heated according to the evaporation parameters. The evaporated high-purity gaseous target material beam is transformed into a gaseous target material beam with nanoscale dimensions, which is directly deposited and condensed in the first electrode groove on the substrate. The evaporation parameters may include evaporation rate, evaporation time, substrate temperature, etc.

[0099] In step S440 of some embodiments, in order to prevent the substrate from being contaminated and the target material from being oxidized, and to ensure the quality of vapor deposition, an inert gas, such as argon, is introduced into the cavity. After the substrate cools to a safe temperature, such as room temperature of 30°C, the substrate is removed.

[0100] Through the above steps S410 to S440, electrodes with finer patterns can be deposited by vapor deposition.

[0101] To increase the size of the fabricated electrodes, a metal mask is prepared based on the size and shape of the mica mask, with the size and shape of the mica mask falling within the range of the metal mask. Since the metal mask exists in thin film form and is relatively fragile, it is fixed to a second mask support to improve its stability and provide support and protection. The fabrication process of the metal mask is described in detail below.

[0102] Please see Figure 5 In some embodiments, step S140 may include, but is not limited to, steps S510 to S540:

[0103] Step S510: Fix the metal film onto the glass slide;

[0104] Step S520: A second electrode groove is fabricated on the metal thin film;

[0105] Step S530: The processed metal film is placed in an acetone solution for cleaning;

[0106] In step S540, the cleaned metal film is fixed to the first surface of the second support structure by the second adhesion component, and the metal film on the first surface is adhered to the second surface of the second support structure by the third adhesion component to obtain a metal mask.

[0107] In step S510 of some embodiments, a micron-scale metal film is fixed on the surface of a glass slide. The thickness of the metal film can be 5 microns, so as to prepare a micron-scale electrode on a water- and oxygen-sensitive two-dimensional material.

[0108] In step S520 of some embodiments, an electrode pattern is processed on a metal thin film using a femtosecond laser galvanometer scanning processing system to obtain a second electrode groove. The second electrode groove is the cut-out area indicated by the electrode pattern, and the second electrode groove can be of any shape, such as symmetrical arrangement. The precision of the first electrode groove is greater than that of the second electrode groove, and the pattern of the first electrode groove is within the range of the pattern of the second electrode groove.

[0109] In step S530 of some embodiments, acetone solution is a strong organic solution with strong dissolving power, capable of effectively dissolving and removing organic contaminants from the surface of the metal film. The processed metal film is placed in the acetone solution, and impurities on the surface of the metal film are cleaned away using an ultrasonic cleaning device.

[0110] In step S540 of some embodiments, both the second and third adhesive components are components capable of adhering to the metal film, such as double-sided tape, adhesive, etc. The second support structure can be a ring structure. The cleaned metal film is fixed to the first surface of the second support structure using double-sided tape, and the metal film on the first surface is adhered to the second surface of the second support structure using another double-sided tape. The first surface is the front side, and the second surface is the back side, resulting in a metal mask. By setting metal films on both sides of the second support structure, additional rigidity and strength can be provided to the second support structure, and electrode pattern transfer errors caused by deformation of the second support structure can be reduced, ensuring accurate alignment of the electrode patterns.

[0111] Through the above steps S510 to S540, a metal mask can be obtained to increase the electrode size based on the metal mask.

[0112] The first mask holder is removed, and a second mounting system is used to fix the second mask holder onto the mica mask. The metal mask is then attached to the electrode surface deposited on the mica mask. Following steps S410 to S440, a substrate containing a layered structure of water-oxygen-sensitive two-dimensional material, the mica mask, and the metal mask is deposited using a thermal evaporation system. Solid deposition is formed on the substrate through the hollowed-out area indicated by the second electrode groove, resulting in the target electrode. This electrode preparation method solves the problems of chemical reagent and impurity contamination and damage caused by the simple coating structure and complex processes in related technologies. It has advantages such as high preparation efficiency, short preparation cycle, high precision, simple fabrication, good stability, and customization. It should be noted that during electrode deposition, the substrate can be fixed on the coating tray using a sample holder, and the corresponding target material can be placed in a vacuum chamber, depending on the coating processing requirements. The specific process of the second mounting is described in detail below.

[0113] Please see Figure 6 In some embodiments, step S150 may include, but is not limited to, steps S610 to S630:

[0114] Step S610: Place the substrate on the first sample stage of the mounting system and place the second mask holder on the second sample stage of the mounting system.

[0115] Step S620: The image of the mica mask on the substrate on the first sample stage and the image of the metal mask on the second mask holder on the second sample stage are aligned through the imaging system of the mounting system.

[0116] In step S630, the lifting axis of the second sample stage is moved to cover the metal mask on the second mask holder with the mica mask.

[0117] In step S610 of some embodiments, the substrate containing the water-oxygen-sensitive two-dimensional material and the mica mask after vapor deposition is used as the initial coating sample. The initial coating sample is placed on the first sample stage, and with the help of the imaging system, the electrodes of the initial coating sample are moved to the center of the field of view in the image of the imaging system. A second mask holder containing a metal mask is placed on the second sample stage of the mounting system.

[0118] In step S620 of some embodiments, the performance of the electrode is highly dependent on the precise alignment of the patterns of each layer. The image of the mica mask on the substrate on the first sample stage and the image of the metal mask on the second mask holder on the second sample stage can be aligned by the imaging system of the mounting system. That is, the image of the electrode and the image of the metal mask are aligned.

[0119] In step S630 of some embodiments, the lifting axis, i.e. the z-axis, of the second sample stage is moved to cover the mica mask with a metal mask, and the second sample stage is lifted to place a new sample.

[0120] Through the above steps S610 to S630, a metal mask can be applied to a mica mask to fabricate a large-size electrode.

[0121] Please see Figure 7 In some embodiments, after step S150, the electrode fabrication method based on water-oxygen-sensitive two-dimensional materials may also include, but is not limited to, steps S710 to S720:

[0122] Step S710: Connect the target electrode to the pins of the test base;

[0123] Step S720: Seal the connected target electrode in an environment filled with inert gas, and test the target electrode through a test base.

[0124] In step S710 of some embodiments, the target electrode is prepared by two vapor deposition processes. The first deposition is to align the mica mask according to the shape of the two-dimensional material sample, and the second deposition is to align the metal mask according to the shape and size of the mica mask. To test the performance of the target electrode, such as the Hall effect, a metal wire with superior conductivity, such as platinum wire, is used to connect the target electrode to the pins of the test base.

[0125] In step S720 of some embodiments, in order to provide a stable testing environment and reduce the influence of external factors such as impurities in the air on the electrode performance, the target electrode is completely sealed with a sealing cap and filled with an inert gas, which can be argon, to ensure that the target electrode is in an argon atmosphere.

[0126] Through the above steps S710 to S720, a stable testing environment can be provided to accurately test the performance of the electrode, thereby evaluating the quality of the electrode.

[0127] This application provides a method for preparing an electrode based on a water-oxygen-sensitive two-dimensional material, comprising: obtaining the desired two-dimensional material on a substrate by mechanical exfoliation; determining the size and shape of the two-dimensional material using a microscopic device; preparing a mica mask according to the size and shape of the two-dimensional material and fixing the mica mask on a first mask holder; attaching and fixing the first mask holder containing the mica mask onto the two-dimensional material using a mounting system; evaporating the substrate; preparing a metal mask according to the size and shape of the mica mask and fixing the metal mask on a second mask holder; attaching and fixing the second mask holder containing the metal mask onto the electrode surface evaporated from the mica mask using a mounting system; evaporating the substrate to obtain the target electrode; introducing the target electrode into the pins of a test base using platinum wire, and sealing the entire assembly with a sealing cap to ensure the sample is in an argon atmosphere.

[0128] like Figure 8 As shown, this application embodiment also provides an electrode fabrication system based on water-oxygen-sensitive two-dimensional material, which can realize the above-mentioned electrode fabrication method based on water-oxygen-sensitive two-dimensional material. The electrode fabrication system based on water-oxygen-sensitive two-dimensional material includes: a femtosecond laser nano-displacement stage processing system 810, a femtosecond laser galvanometer scanning processing system 820, a mounting system 830, and a thermal evaporation system 840.

[0129] The system comprises a femtosecond laser nano-displacement stage processing system 810 for fabricating a mica mask, a femtosecond laser galvanometer scanning processing system 820 for fabricating a metal mask, a mounting system 830 for covering the mica mask onto a water- and oxygen-sensitive two-dimensional material disposed on a substrate, and a metal mask onto the mica mask, and a thermal evaporation system 840 for evaporating the substrate. The mounting system 830 is located inside a glove box, and the glove box and the thermal evaporation system 840 are interconnected.

[0130] The femtosecond laser nanostage machining system includes a femtosecond laser, a main control computer, a nanostage, a control cabinet, a beam shaping module, and a display and monitoring module. The femtosecond laser is used to generate the femtosecond laser beam. The nanostage is used to place the sample to be processed. The nanostage includes a manual stage and an electric stage (piezoelectric stage). The manual stage is used to manually adjust the position of the sample, while the electric stage is used to precisely control the movement of the sample according to signals from the control cabinet. The beam shaping module is used to focus the femtosecond laser beam onto the sample on the nanostage.

[0131] The beam shaping module of a femtosecond laser nanostage machining system includes a mirror, a beam expander, a continuous power attenuator, an optical shutter, and a focusing objective. The mirror controls the deflection of the laser beam in space. The beam expander enlarges the laser beam to obtain a smaller processing spot. The continuous power attenuator changes the intensity of the laser beam to achieve continuous power attenuation. The optical shutter provides a fast response and controls the on / off state of the laser path. The focusing objective focuses the laser beam onto the surface of the sample to be processed.

[0132] The control cabinet includes a data acquisition card, a femtosecond laser driver, a piezoelectric nanostage driver, and an optical shutter driver. The data acquisition card converts control signals emitted by the main control computer into circuit signals recognizable by different drivers, and controls the equipment according to relevant programs. The femtosecond laser driver controls the femtosecond laser parameters. The piezoelectric nanostage driver controls the precise displacement of the piezoelectric nanostage. The optical shutter driver controls the on / off state of the optical shutter, i.e., the laser beam path. The main control computer sends commands to the femtosecond laser driver, piezoelectric nanostage driver, optical shutter driver, and other components in the control cabinet. These components control the femtosecond laser, the motorized nanostage, the optical shutter, and other components according to the commands, and collect and display information from the monitoring module.

[0133] The display monitoring module includes an illumination system and an imaging system. The illumination system includes a halogen white light source, a reflector, and a focusing lens. The imaging system includes a focusing lens, a reflector, and an imaging camera. The light beam emitted by the halogen white light source is focused onto the sample surface after passing through the reflector and focusing lens, and then collected by the imaging camera, feeding the real-time image of the sample back to the main control computer.

[0134] The femtosecond laser galvanometer scanning processing system includes a femtosecond laser, a main control computer, a beam shaping module, a display and monitoring module, and a displacement stage. The femtosecond laser generates a femtosecond laser, which is then focused onto the sample to be processed on the displacement stage by the beam shaping module.

[0135] The beam shaping module of the femtosecond laser galvanometer scanning processing system includes a reflector, a beam expander, a continuous power attenuator, a galvanometer, and a field lens. The reflector deflects the laser beam in space, and the beam expander amplifies the laser beam to obtain a smaller processing spot. The continuous power attenuator continuously controls the laser power. The galvanometer controls the beam angle, and the field lens collects beams at different angles and focuses them onto the same focal plane. The displacement stage moves the sample to be processed to a designated position. The display and monitoring module includes an illumination system and an imaging system. The illumination system includes a halogen white light source, a reflector, and a focusing lens. The imaging system includes a focusing lens, a reflector, and an imaging camera. The beam emitted from the halogen white light source is focused onto the sample surface after passing through the reflector and focusing lens, and then collected by the imaging camera, feeding the real-time image back to the main control computer.

[0136] The mounting system includes two sets of motorized displacement stages and a microscopic imaging system. The motorized displacement stage 1 is used to fix the two-dimensional material and has three degrees of freedom (x, y, z). The motorized displacement stage 2, in conjunction with the microscopic imaging system, mounts the mask and the target two-dimensional material at the same position and has four degrees of freedom (x, y, z, θ).

[0137] The thermal evaporation system is used to convert the evaporated high-purity gaseous target beam into a gaseous target beam with nanoscale size, which is then directly deposited onto the substrate.

[0138] Electrodes were fabricated using graphene as a two-dimensional material, and four target electrodes were tested. A fixed gate voltage was applied to the target electrodes, and the strength of the external magnetic field was varied to test the Hall resistance of the target electrodes under different magnetic fields. Samples were taken every 5 volts (V) from [-20V, 30V] to obtain multiple gate voltages. The magnetic field strength ranged from [-13, 13], with units of Tesla (T). The Hall resistance under different gate voltages and magnetic field strengths was tested, resulting in a fixed gate voltage magnetic field sweep curve, as shown below. Figure 9 As shown in the figure. The horizontal axis of the curve represents the magnetic field strength, and the vertical axis represents the Hall resistance. The unit of Hall resistance is ohms (Ω).

[0139] A fixed magnetic field strength is applied to the target electrode, and the gate voltage is varied to test the Hall resistance of the target electrode under different gate voltages. Samples are taken every 1T from [-13T, 13T] to obtain multiple magnetic field strengths. The gate voltage range is [-30V, 30V]. The Hall resistance is measured under different gate voltages and magnetic field strengths to obtain a fixed magnetic field sweep gate voltage curve, as shown below. Figure 10 As shown in the figure. The horizontal axis of the curve represents the gate voltage, and the vertical axis represents the Hall resistance.

[0140] A gate voltage and magnetic field strength are applied to the target voltage, and the longitudinal resistance of the target electrode is measured under the gate voltage and magnetic field strength to obtain the Landau sector plot of the longitudinal resistance, as shown below. Figure 11 As shown.

[0141] The specific implementation of the electrode preparation system based on water-oxygen-sensitive two-dimensional material is basically the same as the specific embodiment of the electrode preparation method based on water-oxygen-sensitive two-dimensional material described above, and will not be repeated here.

[0142] This application also provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the above-described electrode preparation method based on water-oxygen-sensitive two-dimensional materials. This electronic device can be any smart terminal, including tablet computers, in-vehicle computers, etc.

[0143] Please see Figure 12 , Figure 12 The hardware structure of an electronic device according to another embodiment is illustrated. The electronic device includes:

[0144] The processor 1210 can be implemented using a general-purpose CPU (Central Processing Unit), microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solutions provided in the embodiments of this application.

[0145] The memory 1220 can be implemented as a read-only memory (ROM), static storage device, dynamic storage device, or random access memory (RAM). The memory 1220 can store the operating system and other application programs. When the technical solutions provided in the embodiments of this specification are implemented through software or firmware, the relevant program code is stored in the memory 1220 and is called and executed by the processor 1210 to execute the electrode preparation method based on water-oxygen-sensitive two-dimensional materials according to the embodiments of this application.

[0146] The input / output interface 1230 is used to implement information input and output.

[0147] The communication interface 1240 is used to enable communication and interaction between this device and other devices. Communication can be achieved through wired means (such as USB, network cable, etc.) or wireless means (such as mobile network, WIFI, Bluetooth, etc.).

[0148] Bus 1250 transmits information between various components of the device (e.g., processor 1210, memory 1220, input / output interface 1230, and communication interface 1240);

[0149] The processor 1210, memory 1220, input / output interface 1230 and communication interface 1240 are connected to each other within the device via bus 1250.

[0150] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described electrode preparation method based on water-oxygen-sensitive two-dimensional materials.

[0151] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer-executable programs. Furthermore, memory may include high-speed random access memory, and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, memory may optionally include memory remotely located relative to the processor, and these remote memories can be connected to the processor via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0152] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.

[0153] Those skilled in the art will understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of this application, and may include more or fewer steps than shown, or combine certain steps, or different steps.

[0154] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0155] Those skilled in the art will understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in the systems and devices, can be implemented as software, firmware, hardware, or suitable combinations thereof.

[0156] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0157] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0158] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. The coupling or direct coupling or communication connection between the shown or discussed units may be through some interfaces, or indirect coupling or communication connection between the apparatus or units, and may be electrical, mechanical, or other forms.

[0159] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0160] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0161] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes multiple instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing programs, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0162] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.

Claims

1. A method for preparing an electrode based on a water-oxygen-sensitive two-dimensional material, characterized in that, The method includes: Prepare a substrate, on which a water- and oxygen-sensitive two-dimensional material is disposed; A mica mask is prepared and fixed to a first mask support; wherein the mica mask has a first electrode groove. The first mask holder is fixed on the substrate, and the substrate is vapor-deposited to form a solid deposition on the substrate through the first electrode trench; Remove the first mask holder, prepare a metal mask, and fix the metal mask to the second mask holder; wherein the metal mask has a second electrode groove, and the pattern of the first electrode groove is within the range of the pattern of the second electrode groove; The second mask holder is fixed on the mica mask, and the substrate is vapor-deposited to form a solid deposition on the substrate through the second electrode trench. The mica mask and the metal mask are removed from the substrate to obtain the target electrode.

2. The method according to claim 1, characterized in that, The preparation of the mica mask includes: Obtaining fluorophlogopite; An opening structure is provided on the first adhesion component, and the fluorophlogopite is cleaved onto the opening structure through the first adhesion component; The first adhesive component is fixed to the first support structure; The fluorophlogopite fixed to the first adhesive component of the first support structure is processed to obtain the mica mask.

3. The method according to claim 1, characterized in that, The preparation of the metal mask includes: A thin metal film is fixed onto a glass slide; The second electrode groove is processed on the metal thin film; The processed metal film is then cleaned in an acetone solution. The cleaned metal film is fixed to the first surface of the second support structure by the second adhesion component, and the metal film on the first surface is adhered to the second surface of the second support structure by the third adhesion component to obtain the metal mask.

4. The method according to claim 1, characterized in that, The step of fixing the first mask holder onto the substrate includes: The substrate is placed on the first sample stage of the mounting system, and the first mask holder is placed on the second sample stage of the mounting system; The imaging system of the mounting system aligns with the image of the water-oxygen-sensitive two-dimensional material on the substrate on the first sample stage and the image of the mica mask on the first mask holder on the second sample stage; The lifting shaft of the second sample stage is moved to cover the mica mask on the first mask holder over the water-oxygen sensitive two-dimensional material.

5. The method according to claim 1, characterized in that, The evaporation of the substrate includes: The substrate is placed on the plating tray, and the plating tray is placed inside the cavity of the thermal evaporation system; A target material is placed inside the cavity, and the cavity is evacuated to a vacuum state. The target material is heated by the thermal evaporation system so that the evaporated gaseous target material bundle is deposited and condensed on the substrate. Inert gas is introduced into the cavity.

6. The method according to any one of claims 1 to 5, characterized in that, The step of fixing the second mask holder onto the mica mask includes: The substrate is placed on the first sample stage of the mounting system, and the second mask holder is placed on the second sample stage of the mounting system; The imaging system of the mounting system aligns with the image of the mica mask on the substrate on the first sample stage and the image of the metal mask on the second mask holder on the second sample stage. The lifting shaft of the second sample stage is moved to cover the mica mask with the metal mask on the second mask holder.

7. The method according to any one of claims 1 to 5, characterized in that, After removing the mica mask and the metal mask from the substrate, the electrode fabrication method based on water-oxygen-sensitive two-dimensional materials further includes: Connect the target electrode to the pins of the test base; The connected target electrode is sealed in an environment filled with inert gas, and the target electrode is tested through the test base.

8. An electrode fabrication system based on water-oxygen-sensitive two-dimensional materials, characterized in that, The system includes: a femtosecond laser nano-displacement stage processing system, a femtosecond laser galvanometer scanning processing system, a mounting system, and a thermal evaporation system; The femtosecond laser nano-displacement stage processing system is used to prepare a mica mask, the femtosecond laser galvanometer scanning processing system is used to prepare a metal mask, the mounting system is used to cover the mica mask on the substrate and cover the metal mask on the mica mask, and the thermal evaporation system is used to vapor-deposit the substrate.

9. An electronic device, characterized in that, The electronic device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the method according to any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the method described in any one of claims 1 to 7.

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