Method for forming silicon-boron-containing film with low leakage current

Abstract

Methods for forming a silicon boron nitride layer are provided. The method includes positioning a substrate on a susceptor in a process region within a process chamber; heating a susceptor holding the substrate; and introducing a first gas stream of the first process gas and a second gas stream of the second process gas into the process region. The first gas stream of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. A second gas stream of the second process gas contains diborane and hydrogen. The method further includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas reaching the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

Description

[0001] This application is a divisional application of the invention patent application filed on December 23, 2019, with application number "201980089580.7" and invention title "Method for forming a silicon boron film with low leakage current". Technical Field

[0002] The embodiments of this disclosure generally relate to deposition processes, and more specifically to methods for forming films containing silicon boron nitride (SiBN). Background Technology

[0003] In semiconductor manufacturing, various devices can be formed. Such devices include dynamic random access memory (DRAM) elements with silicon- and nitrogen-containing stop and support layers. For many DRAM devices, it is necessary to fill the silicon- and nitrogen-containing layers to also contain boron. However, silicon- and boron-nitride-containing layers typically have unfavorable thermal budgets and high leakage current values. The high thermal budget increases boron diffusion during additional DRAM device formation processes, such as wet etching, leading to deformation, and the high leakage current causes electrical short circuits between capacitors in the DRAM device.

[0004] Therefore, there is a need for improved silicon boron nitride layers and methods for forming silicon boron nitride layers with relatively high boron concentration and relatively low leakage current. Summary of the Invention

[0005] The embodiments of this disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers with relatively high boron concentration and relatively low leakage current. In some examples, the silicon boron nitride layer is a support layer and / or stop layer within a capacitor or other electronic device.

[0006] In one or more embodiments, a method for forming a silicon boron nitride layer is provided, the method comprising: positioning a substrate on a pedestal in a process region within a process chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; and introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region. The first gas flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen (N2) having a flow rate of about 5000 sccm to about 25000 sccm, argon having a flow rate of about 50 sccm to about 10000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20000 sccm. The second gas flow of the second process gas contains about 2 mol% to about 15 mol% diborane, about 85 mol% to about 98 mol% hydrogen, and a flow rate of about 1 sccm to about 5000 sccm. The method further includes: simultaneously forming a plasma with the first gas flow of the first process gas and the second gas flow of the second process gas reaching the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0007] In other embodiments, a method for forming a silicon boron nitride layer is provided, the method comprising: positioning a substrate on a pedestal in a process region within a process chamber; and introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region. The first gas flow of the first process gas contains a silicon-containing precursor, a nitrogen-containing precursor, hydrogen, and at least two gases selected from the group consisting of argon, helium, nitrogen, and any combination thereof. The second gas flow of the second process gas contains about 2 mol% to about 15 mol% of diborane, about 85 mol% to about 98 mol% of hydrogen, and a flow rate of about 1 sccm to about 5000 sccm. The method further comprises: simultaneously forming a plasma with the first gas flow of the first process gas and the second gas flow of the second process gas arriving at the process region; and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate. The silicon boron nitride layer contains about 10 atomic percent (at%) to about 50 at%, boron, has a nitrogen-to-silicon atomic ratio of about 1.05 to about 1.5, and has a nitrogen content of less than 1 × 10⁻⁶ at 1.5 MV / cm (at 1.5 MV / cm). -9 A / cm 2 Leakage current.

[0008] In some embodiments, a method for forming a silicon boron nitride layer is provided, the method comprising: positioning a substrate on a base in a process region within a process chamber; heating the base holding the substrate to about 225°C to about 575°C; maintaining the process region at a pressure of about 2 Torr to about 8 Torr; and introducing a first gas flow of a first process gas into the process region. The first gas flow of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen having a flow rate of about 5000 sccm to about 25000 sccm, argon having a flow rate of about 50 sccm to about 10000 sccm, and hydrogen having a flow rate of about 50 sccm to about 20000 sccm. The method further comprises: interrupting the first gas flow of the first process gas; simultaneously forming a plasma with a second gas flow of a second process gas arriving at the process region; and forming a silicon boron nitride layer on the substrate. The second gas flow of the second process gas has a flow rate of about 1 sccm to about 5000 sccm and contains about 2 mol% to about 15 mol% of diborane and about 85 mol% to about 98 mol% of hydrogen. Attached Figure Description

[0009] To provide a more detailed understanding of the foregoing features of this disclosure, the disclosure, which has been briefly outlined above, can be described in more detail with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting their scope, and other equivalent embodiments are permissible.

[0010] Figure 1 A schematic cross-sectional view of a process chamber according to one or more embodiments described and discussed herein is depicted.

[0011] Figure 2 A schematic cross-sectional view of another process chamber according to one or more embodiments described and discussed herein is depicted.

[0012] Figure 3 This is a flowchart of a method for forming a silicon boron nitride layer according to one or more embodiments described and discussed herein.

[0013] Figure 4 A capacitor device containing a silicon boron nitride layer is depicted, which may be deposited or otherwise manufactured by methods according to one or more embodiments described and discussed herein.

[0014] To facilitate understanding, the same reference numerals are used where possible to denote common elements in the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0015] The embodiments of this disclosure generally relate to improved silicon boron nitride layers and methods for forming silicon boron nitride layers. These silicon boron nitride materials and layers have relatively high boron concentrations and low leakage currents, as well as other properties suitable for electronic devices such as capacitors. For example, the silicon boron nitride layers described and discussed herein can be used as support layers and / or stop layers within capacitors or other electronic devices. Silicon boron nitride layers may have a boron concentration of about 10 atomic percent (at%) to about 50 at%, such as about 20 at% to about 40 at%, and less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 Leakage current.

[0016] In one or more embodiments, a method for forming a silicon boron nitride layer includes: positioning a substrate on a pedestal in a process region within a process chamber; heating the pedestal holding the substrate to a deposition temperature; and introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region. In some embodiments, plasma is simultaneously ignited or otherwise formed along with the first gas flow of the first process gas and the second gas flow of the second process gas arriving at the process region. The plasma may be generated at a distal end of the process chamber or in situ within the process chamber. During a plasma-enhanced chemical vapor deposition (PE-CVD) process, the substrate is exposed to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate.

[0017] During the PE-CVD process, the substrate on which the substrate is placed is kept heated to deposition temperatures of approximately 225°C, approximately 250°C, approximately 300°C, approximately 350°C, approximately 400°C, or approximately 450°C to approximately 475°C, approximately 500°C, approximately 525°C, approximately 550°C, approximately 560°C, approximately 570°C, approximately 575°C, approximately 580°C, or approximately 600°C. For example, the substrate is heated to approximately 225°C to approximately 600°C, approximately 225°C to approximately 575°C, approximately 225°C to approximately 560°C, approximately 225°C to approximately 550°C, approximately 225°C to approximately 500°C, approximately 225°C to approximately 450°C, approximately 225°C to approximately 400°C, approximately 225°C to approximately 350°C, approximately 225°C to approximately 300°C, approximately 350°C to approximately 600°C, approximately 350°C to approximately 575 ... Deposition temperatures of approximately 560°C, approximately 350°C to approximately 550°C, approximately 350°C to approximately 500°C, approximately 350°C to approximately 450°C, approximately 350°C to approximately 400°C, approximately 350°C to approximately 375°C, approximately 450°C to approximately 600°C, approximately 450°C to approximately 575°C, approximately 450°C to approximately 560°C, approximately 450°C to approximately 550°C, approximately 450°C to approximately 500°C, or approximately 450°C to approximately 475°C.

[0018] During the PE-CVD process, the process zone is maintained at pressures of less than 100 Torr, less than 50 Torr, less than 20 Torr, or less than 10 Torr. The process zone is maintained at pressures of approximately 0.5 Torr, approximately 1 Torr, approximately 2 Torr, approximately 3 Torr, or approximately 4 Torr to approximately 5 Torr, approximately 6 Torr, approximately 7 Torr, approximately 8 Torr, or approximately 9 Torr. For example, the process area is maintained at a pressure of about 0.5 Torr to less than 10 Torr, about 2 Torr to less than 10 Torr, about 2 Torr to about 8 Torr, about 2 Torr to about 6 Torr, about 2 Torr to about 5 Torr, about 2 Torr to about 4 Torr, about 3 Torr to less than 10 Torr, about 3 Torr to about 8 Torr, about 3 Torr to about 6 Torr, about 3 Torr to about 5 Torr, about 3 Torr to about 4 Torr, about 4 Torr to less than 10 Torr, about 4 Torr to about 8 Torr, about 4 Torr to about 6 Torr, or about 4 Torr to about 5 Torr.

[0019] The base is positioned by a process distance, which is the distance between the base and the nozzle within the process chamber during the PE-CVD process. The process distance is approximately 100 mils (approximately 2.5 mm), approximately 200 mils (approximately 5 mm), approximately 300 mils (approximately 7.5 mm), or approximately 400 mils (approximately 10 mm) to approximately 500 mils (approximately 12.5 mm), approximately 600 mils (approximately 15 mm), approximately 800 mils (approximately 20 mm), approximately 1000 mils (approximately 25.4 mm), approximately 2000 mils (approximately 50.8 mm), or approximately 5000 mils (approximately 127 mm). For example, the process distance is about 100 mils to about 5000 mils, about 100 mils to about 2000 mils, about 100 mils to about 1000 mils, about 100 mils to about 800 mils, about 100 mils to about 600 mils, about 100 mils to about 500 mils, about 100 mils to about 400 mils, about 100 mils to about 300 mils, about 300 mils to about 2000 mils, about 300 mils to about 1000 mils, about 300 mils to about 800 mils, about 300 mils to about 600 mils, about 300 mils to about 500 mils, or about 300 mils to about 400 mils.

[0020] The first process gas stream contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H2), and at least two process gases or carrier gases selected from argon, helium, nitrogen (N2), or any combination thereof. Exemplary silicon-containing precursors may be or include silanes, silanes, trisilanes, tetrasilanes, or any combination thereof. Exemplary nitrogen-containing precursors may be or include ammonia, hydrazine, one or more alkylamines (e.g., dimethylamine), or any combination thereof. In one or more examples, the first process gas contains silane, ammonia, hydrogen (H2), argon, helium, and nitrogen (N2).

[0021] The first gas stream of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 30 sccm or about 50 sccm to about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 400 sccm, about 500 sccm, about 800 sccm, about 1000 sccm, about 1500 sccm or about 2000 sccm. For example, the first gas stream of the first process gas contains a silicon-containing precursor (e.g., silane) having a flow rate of about 1 sccm to about 2000 sccm, about 1 sccm to about 1000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 250 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 10 sccm to about 2000 sccm, about 10 sccm to about 1000 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 250 sccm, about 10 sccm to about 100 sccm, about 10 sccm to about 50 sccm, about 20 sccm to about 2000 sccm, about 20 sccm to about 1000 sccm, about 20 sccm to about 500 sccm, about 20 sccm to about 250 sccm, about 20 sccm to about 100 sccm, or about 20 sccm to about 50 sccm.

[0022] The first gas stream of the first process gas contains a nitrogen-containing precursor (e.g., ammonia) having a flow rate of about 1 sccm, about 10 sccm, about 50 sccm, about 80 sccm, about 100 sccm, about 150 sccm, about 200 sccm, about 250 sccm, about 300 sccm, about 500 sccm, or about 800 sccm to about 1000 sccm, about 1500 sccm, about 2000 sccm, about 2500 sccm, about 3000 sccm, about 4000 sccm, about 5000 sccm, about 7000 sccm, about 8500 sccm, or about 10000 sccm. For example, the first gas flow of the first process gas contains gases having a concentration of about 1 sccm to about 10000 sccm, about 10 sccm to about 10000 sccm, about 10 sccm to about 5000 sccm, about 10 sccm to about 4000 sccm, about 10 sccm to about 3000 sccm, about 10 sccm to about 2000 sccm, about 10 sccm to about 1500 sccm, about 10 sccm to about 1000 sccm, about 10 sccm to about 800 sccm, about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 50 sccm to about 10000 sccm, about 50 sccm to about 5000 sccm, about 50 sccm to about 4000 sccm, about 50 sccm to about 3000 sccm, and about 50 sccm to about 2000 sccm. A nitrogen-containing precursor (e.g., ammonia) with a flow rate of about 000 sccm, about 50 sccm to about 1500 sccm, about 50 sccm to about 1000 sccm, about 50 sccm to about 800 sccm, about 50 sccm to about 500 sccm, about 50 sccm to about 300 sccm, about 100 sccm to about 10000 sccm, about 100 sccm to about 5000 sccm, about 100 sccm to about 4000 sccm, about 100 sccm to about 3000 sccm, about 100 sccm to about 2000 sccm, about 100 sccm to about 1500 sccm, about 100 sccm to about 1000 sccm, about 100 sccm to about 800 sccm, about 100 sccm to about 500 sccm, or about 100 sccm to about 300 sccm.

[0023] The first gas stream of the first process gas contains helium having a flow rate of about 100 sccm, about 500 sccm, about 750 sccm or about 1000 sccm to about 1500 sccm, about 2000 sccm, about 5000 sccm, about 8000 sccm, about 10000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm or about 50000 sccm. For example, the first gas flow of the first process gas contains gases having a concentration of approximately 100 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 40,000 sccm, approximately 500 sccm to approximately 20,000 sccm, approximately 500 sccm to approximately 15,000 sccm, approximately 500 sccm to approximately 12,000 sccm, approximately 500 sccm to approximately 10,000 sccm, approximately 500 sccm to approximately 8,000 sccm, approximately 500 sccm to approximately 5,000 sccm, and approximately 5 00 sccm to about 1000 sccm, about 750 sccm to about 50000 sccm, about 750 sccm to about 40000 sccm, about 750 sccm to about 20000 sccm, about 750 sccm to about 15000 sccm, about 750 sccm to about 12000 sccm, about 750 sccm to about 10000 sccm, about 750 sccm to about 8000 sccm, about 750 sccm to about 5000 sccm, about 750 sccm to about 1000 sccm, about 100 0 sccm to about 50,000 sccm, about 1,000 sccm to about 40,000 sccm, about 1,000 sccm to about 20,000 sccm, about 1,000 sccm to about 15,000 sccm, about 1,000 sccm to about 12,000 sccm, about 1,000 sccm to about 10,000 sccm, about 1,000 sccm to about 8,000 sccm, about 1,000 sccm to about 5,000 sccm, about 1,000 sccm to about 3,000 sccm, about 5,000 sccm to about 50,000 sccm Helium with flow rates of approximately 5,000 sccm to approximately 40,000 sccm, approximately 5,000 sccm to approximately 30,000 sccm, approximately 5,000 sccm to approximately 22,000 sccm, approximately 5,000 sccm to approximately 20,000 sccm, approximately 5,000 sccm to approximately 18,000 sccm, approximately 5,000 sccm to approximately 15,000 sccm, approximately 5,000 sccm to approximately 12,000 sccm, approximately 5,000 sccm to approximately 10,000 sccm, or approximately 5,000 sccm to approximately 8,000 sccm.

[0024] The first gas stream of the first process gas contains nitrogen (N2) having a flow rate of about 100 sccm, about 500 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3500 sccm, about 5000 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm or about 15000 sccm to about 18000 sccm, about 20000 sccm, about 22000 sccm, about 25000 sccm, about 30000 sccm, about 35000 sccm, about 40000 sccm or about 50000 sccm. For example, the first gas flow of the first process gas contains gases having capacities of approximately 100 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 40,000 sccm, approximately 500 sccm to approximately 20,000 sccm, approximately 500 sccm to approximately 15,000 sccm, approximately 500 sccm to approximately 12,000 sccm, approximately 500 sccm to approximately 10,000 sccm, approximately 500 sccm to approximately 8,000 sccm, approximately 500 sccm to approximately 5,000 sccm, approximately 500 sccm to approximately 1,000 sccm, approximately 1,000 sccm to approximately 50,000 sccm, and approximately 1,000 sccm to approximately 4,000 sccm. 0 sccm, approximately 1000 sccm to approximately 30000 sccm, approximately 1000 sccm to approximately 25000 sccm, approximately 1000 sccm to approximately 22000 sccm, approximately 1000 sccm to approximately 20000 sccm, approximately 1000 sccm to approximately 15000 sccm, approximately 1000 sccm to approximately 12000 sccm, approximately 1000 sccm to approximately 10000 sccm, approximately 1000 sccm to approximately 8000 sccm, approximately 1000 sccm to approximately 5000 sccm, approximately 1000 sccm to approximately 3000 sccm, approximately 5000 sccm to approximately 50000 sccm, approximately 5000 sccm to approximately 40000 scccm, approximately 5000 sccm to approximately 30000 sccm, approximately 5000 sccm to approximately 25000 sccm, approximately 5000 sccm to approximately 22000 sccm, approximately 5000 sccm to approximately 20000 sccm, approximately 5000 sccm to approximately 18000 sccm, approximately 5000 sccm to approximately 15000 sccm, approximately 5000 sccm to approximately 12000 sccm, approximately 5000 sccm to approximately 10000 sccm, approximately 5000 sccm to approximately 8000 sccm, approximately 10000 sccm to approximately 50000 sccm, approximately 10000 sccm to approximately 40000 sccm, approximately 10000 sccm to approximately 30000 sccm, approximately 10000 sccm to approximately 25000 sccm, approximately 10000 Nitrogen flow rates of approximately 10,000 sccm to approximately 22,000 sccm, approximately 10,000 sccm to approximately 20,000 sccm, approximately 10,000 sccm to approximately 18,000 sccm, approximately 10,000 sccm to approximately 15,000 sccm, approximately 10,000 sccm to approximately 12,000 sccm, approximately 12,000 sccm to approximately 50,000 sccm, approximately 12,000 sccm to approximately 40,000 sccm, approximately 12,000 sccm to approximately 30,000 sccm, approximately 12,000 sccm to approximately 25,000 sccm, approximately 12,000 sccm to approximately 22,000 sccm, approximately 12,000 sccm to approximately 20,000 sccm, approximately 12,000 sccm to approximately 18,000 sccm, or approximately 12,000 sccm to approximately 15,000 sccm.

[0025] The first gas stream of the first process gas contains argon having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 4000 sccm or about 5000 sccm to about 6000 sccm, about 7500 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm, or about 50000 sccm. For example, the first gas flow of the first process gas contains gases having a concentration of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, or about 50 sccm to about 6,000 sccm. 000 sccm, about 50 sccm to about 5000 sccm, about 50 sccm to about 3000 sccm, about 50 sccm to about 1000 sccm, about 200 sccm to about 50000 sccm, about 200 sccm to about 30000 sccm, about 200 sccm to about 25000 sccm, about 200 sccm to about 20000 sccm, about 200 sccm to about 15000 sccm, about 200 sccm to about 12000 sccm Approximately 200 sccm to approximately 10,000 sccm, approximately 200 sccm to approximately 7,500 sccm, approximately 200 sccm to approximately 6,000 sccm, approximately 200 sccm to approximately 5,000 sccm, approximately 200 sccm to approximately 3,000 sccm, approximately 200 sccm to approximately 1,000 sccm, approximately 500 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 30,000 sccm, approximately 500 sccm to approximately 25,000 sccm. Argon with flow rates of approximately 500 sccm to approximately 20,000 sccm, approximately 500 sccm to approximately 15,000 sccm, approximately 500 sccm to approximately 12,000 sccm, approximately 500 sccm to approximately 10,000 sccm, approximately 500 sccm to approximately 7,500 sccm, approximately 500 sccm to approximately 6,000 sccm, approximately 500 sccm to approximately 5,000 sccm, approximately 500 sccm to approximately 3,000 sccm, or approximately 500 sccm to approximately 1,000 sccm.

[0026] The first gas stream of the first process gas contains hydrogen (H2) having a flow rate of about 50 sccm, about 100 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 750 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 4000 sccm or about 5000 sccm to about 6000 sccm, about 7500 sccm, about 8000 sccm, about 10000 sccm, about 12000 sccm, about 15000 sccm, about 20000 sccm, about 30000 sccm, about 40000 sccm or about 50000 sccm. For example, the first gas flow of the first process gas contains gases having a concentration of about 50 sccm to about 50,000 sccm, about 50 sccm to about 30,000 sccm, about 50 sccm to about 25,000 sccm, about 50 sccm to about 20,000 sccm, about 50 sccm to about 15,000 sccm, about 50 sccm to about 12,000 sccm, about 50 sccm to about 10,000 sccm, about 50 sccm to about 7,500 sccm, or about 50 sccm to about 6,000 sccm. 000 sccm, about 50 sccm to about 5000 sccm, about 50 sccm to about 3000 sccm, about 50 sccm to about 1000 sccm, about 200 sccm to about 50000 sccm, about 200 sccm to about 30000 sccm, about 200 sccm to about 25000 sccm, about 200 sccm to about 20000 sccm, about 200 sccm to about 15000 sccm, about 200 sccm to about 12000 sccm Approximately 200 sccm to approximately 10,000 sccm, approximately 200 sccm to approximately 7,500 sccm, approximately 200 sccm to approximately 6,000 sccm, approximately 200 sccm to approximately 5,000 sccm, approximately 200 sccm to approximately 3,000 sccm, approximately 200 sccm to approximately 1,000 sccm, approximately 500 sccm to approximately 50,000 sccm, approximately 500 sccm to approximately 30,000 sccm, approximately 500 sccm to approximately 25,000 sccm, approximately 500 The flow rates of hydrogen (H2) are approximately 20,000 sccm to 20,000 sccm, approximately 500 sccm to 15,000 sccm, approximately 500 sccm to 12,000 sccm, approximately 500 sccm to 10,000 sccm, approximately 500 sccm to 7,500 sccm, approximately 500 sccm to 6,000 sccm, approximately 500 sccm to 5,000 sccm, approximately 500 sccm to 3,000 sccm, or approximately 500 sccm to 1,000 sccm.

[0027] In one or more examples, the first gas stream of the first process gas contains silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, nitrogen (N2) having a flow rate of about 5000 sccm to about 25000 sccm, argon having a flow rate of about 50 sccm to about 10000 sccm, and hydrogen (H2) having a flow rate of about 50 sccm to about 20000 sccm. In other examples, the first gas stream of the first process gas contains silane having a flow rate of about 10 sccm to about 250 sccm, ammonia having a flow rate of about 50 sccm to about 2000 sccm, helium having a flow rate of about 750 sccm to about 15000 sccm, nitrogen having a flow rate of about 10000 sccm to about 20000 sccm, argon having a flow rate of about 200 sccm to about 7500 sccm, and hydrogen having a flow rate of about 200 sccm to about 15000 sccm. In some examples, the first gas stream of the first process gas contains silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1000 sccm, helium having a flow rate of about 1000 sccm to about 10000 sccm, nitrogen having a flow rate of about 12000 sccm to about 18000 sccm, argon having a flow rate of about 500 sccm to about 5000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10000 sccm.

[0028] In one or more embodiments, the second process gas contains one or more boron-containing precursors (e.g., diborane) and hydrogen (H2). In some examples, the second process gas contains about 20 mol% or less diborane, with the remainder being hydrogen. The second process gas contains a concentration of about 1 mol%, about 2 mol%, about 3 mol%, about 4 mol%, or about 5 mol% to about 6 mol%, about 8 mol%, about 10 mol%, about 12 mol%, about 15 mol%, or about 20 mol% of the boron-containing precursor (e.g., diborane). For example, the second process gas contains a boron-containing precursor (e.g., diborane) at concentrations of about 2 mol% to about 20 mol%, about 2 mol% to about 15 mol%, about 2 mol% to about 12 mol%, about 2 mol% to about 10 mol%, about 2 mol% to about 8 mol%, about 2 mol% to about 5 mol%, about 2 mol% to about 3 mol%, about 3 mol% to about 20 mol%, about 3 mol% to about 15 mol%, about 3 mol% to about 12 mol%, about 3 mol% to about 10 mol%, about 3 mol% to about 8 mol%, about 3 mol% to about 5 mol%, about 5 mol% to about 20 mol%, about 5 mol% to about 15 mol%, about 5 mol% to about 12 mol%, about 5 mol% to about 10 mol%, or about 5 mol% to about 8 mol%.

[0029] The second process gas contains hydrogen (H2) at concentrations of approximately 80 mol%, approximately 85 mol%, approximately 88 mol%, approximately 90 mol%, approximately 92 mol%, approximately 94 mol%, or approximately 95 mol% to approximately 96 mol%, approximately 97 mol%, approximately 98 mol%, or approximately 99 mol%. For example, the second process gas contains hydrogen at concentrations of about 80 mol% to about 99 mol%, about 80 mol% to about 95 mol%, about 80 mol% to about 92 mol%, about 80 mol% to about 90 mol%, about 80 mol% to about 88 mol%, about 80 mol% to about 85 mol%, about 85 mol% to about 99 mol%, about 85 mol% to about 98 mol%, about 85 mol% to about 95 mol%, about 85 mol% to about 92 mol%, about 85 mol% to about 90 mol%, about 85 mol% to about 88 mol%, about 88 mol% to about 97 mol%, about 90 mol% to about 99 mol%, about 90 mol% to about 95 mol%, about 90 mol% to about 92 mol%, or about 95 mol% to about 99 mol%.

[0030] In one or more examples, the second gas flow of the second process gas has a flow rate of about 1 sccm, about 5 sccm, about 10 sccm, about 20 sccm, about 35 sccm, about 50 sccm, about 65 sccm, about 80 sccm, or about 100 sccm to about 150 sccm, about 200 sccm, about 300 sccm, about 500 sccm, about 800 sccm, about 1000 sccm, about 1500 sccm, about 2000 sccm, about 3000 sccm, about 400 sccm, or about 5000 sccm. For example, the second gas flow of the second process gas has a flow rate of about 1 sccm to about 5000 sccm, about 1 sccm to about 3000 sccm, about 1 sccm to about 2000 sccm, about 1 sccm to about 1000 sccm, about 1 sccm to about 500 sccm, about 1 sccm to about 300 sccm, about 1 sccm to about 200 sccm, about 1 sccm to about 100 sccm, about 1 sccm to about 50 sccm, about 5 sccm to about 5000 sccm, about 5 sccm to about 3000 sccm, about 5 sccm to about 2000 sccm, about 5 sccm to about 1000 sccm, and about 5 s. Flow rates of approximately 500 sccm to 500 sccm, approximately 5 sccm to 300 sccm, approximately 5 sccm to 200 sccm, approximately 5 sccm to 100 sccm, approximately 5 sccm to 50 sccm, approximately 10 sccm to 5000 sccm, approximately 10 sccm to 3000 sccm, approximately 10 sccm to 2000 sccm, approximately 10 sccm to 1000 sccm, approximately 10 sccm to 500 sccm, approximately 10 sccm to 300 sccm, approximately 10 sccm to 200 sccm, approximately 10 sccm to 100 sccm, or approximately 10 sccm to 50 sccm.

[0031] In one or more examples, the second process gas contains about 2 mol% to about 15 mol% of diborane and about 85 mol% to about 98 mol% of hydrogen, and has a flow rate of about 1 sccm to about 5000 sccm. In other examples, the second process gas contains about 3 mol% to about 12 mol% of diborane and about 88 mol% to about 97 mol% of hydrogen, and has a flow rate of about 5 sccm to about 2000 sccm. In some examples, the second process gas contains about 5 mol% to about 10 mol% of diborane and about 90 mol% to about 95 mol% of hydrogen, and has a flow rate of about 10 sccm to about 1000 sccm. Properties of silicon nitride layers or materials

[0032] The silicon boron nitride layer contains at least boron, silicon, nitrogen, and hydrogen. In some examples, the silicon boron nitride layer contains more nitrogen than silicon, more silicon than boron, and more boron than hydrogen. In one or more embodiments, the silicon boron nitride layer may have a boron concentration of about 10 atomic percent (at%), about 12 at%, about 15 at%, or about 18 at% to about 20 at%, about 22 at%, about 25 at%, about 28 at%, about 30 at%, about 35 at%, about 40 at%, about 45 at%, or about 50 at%. For example, the silicon boron nitride layer may have a content of about 10 at% to about 50 at%, about 10 at% to about 45 at%, about 10 at% to about 40 at%, about 10 at% to about 35 at%, about 10 at% to about 30 at%, about 10 at% to about 28 at%, about 10 at% to about 25 at%, about 10 at% to about 22 at%, about 10 at% to about 20 at%, about 10 at% to about 18 at%, about 12 at% to about 45 at%, about 12 at% to about 40 at%, about 12 at% to about 30 at%, about 15 at% to about 50 at%, about 15 at% to about 45 at%, about 15 at% to about 45 at%, about 15 at% Boron concentrations of approximately 15 at% to 40 at%, approximately 15 at% to 35 at%, approximately 15 at% to 30 at%, approximately 15 at% to 28 at%, approximately 15 at% to 25 at%, approximately 15 at% to 22 at%, approximately 15 at% to 20 at%, approximately 15 at% to 18 at%, approximately 20 at% to 50 at%, approximately 20 at% to 45 at%, approximately 20 at% to 40 at%, approximately 20 at% to 35 at%, approximately 20 at% to 30 at%, approximately 20 at% to 28 at%, approximately 20 at% to 25 at%, or approximately 20 at% to 22 at%.

[0033] The silicon boron nitride layer may have a hydrogen concentration of about 1 at% to about 7 at% to about 8 at% to about 10 at% to about 12 at% to about 15 at% to about 18 at% to about 20 at%. For example, the silicon boron nitride layer may have a hydrogen concentration of about 1 at% to about 20 at%, about 1 at% to about 15 at%, about 2 at% to about 15 at%, about 3 at% to about 15 at%, about 5 at% to about 15 at%, about 6 at% to about 15 at%, about 8 at% to about 15 at%, about 10 at% to about 15 at%, about 12 at% to about 15 at%, about 1 at% to about 10 at%, about 2 at% to about 10 at%, about 3 at% to about 10 at%, about 5 at% to about 10 at%, about 6 at% to about 10 at%, or about 8 at% to about 10 at%.

[0034] The silicon boron nitride layer may have a nitrogen concentration of about 20 at%, about 22 at%, about 25 at%, about 28 at%, or about 30 at% to about 32 at%, about 35 at%, about 38 at%, about 40 at%, about 42 at%, about 45 at%, about 48 at%, or about 50 at%. For example, the silicon boron nitride layer may have a nitrogen concentration of about 20 at% to about 50 at%, about 20 at% to about 40 at%, about 20 at% to about 35 at%, about 20 at% to about 30 at%, about 20 at% to about 25 at%, about 25 at% to about 50 at%, about 25 at% to about 40 at%, about 25 at% to about 35 at%, about 25 at% to about 30 at%, about 25 at% to about 28 at%, about 30 at% to about 50 at%, about 30 at% to about 40 at%, about 30 at% to about 35 at%, or about 30 at% to about 32 at%.

[0035] The silicon boron nitride layer may have a silicon concentration of about 18 at%, about 20 at%, about 22 at%, about 25 at%, about 28 at%, or about 30 at% to about 32 at%, about 35 at%, about 38 at%, about 40 at%, about 42 at%, or about 45 at%. For example, the silicon boron nitride layer may have a silicon concentration of about 18 at% to about 45 at%, about 18 at% to about 40 at%, about 18 at% to about 35 at%, about 18 at% to about 30 at%, about 18 at% to about 25 at%, about 25 at% to about 45 at%, about 25 at% to about 40 at%, about 25 at% to about 35 at%, about 25 at% to about 30 at%, about 25 at% to about 28 at%, about 30 at% to about 45 at%, about 30 at% to about 40 at%, about 30 at% to about 35 at%, about 30 at% to about 32 at%, about 28 at% to about 40 at%, about 28 at% to about 35 at%, or about 28 at% to about 32 at%.

[0036] In one or more embodiments, the silicon boron nitride layer has a nitrogen to silicon atomic ratio greater than 1. The silicon boron nitride layer has a nitrogen to silicon atomic ratio of about 1.05, about 1.1, about 1.15, or about 1.2 to about 1.25, about 1.3, about 1.35, about 1.4, about 1.45, or about 1.5. For example, the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5, about 1.05 to about 1.4, about 1.05 to about 1.35, about 1.05 to about 1.3, about 1.05 to about 1.25, about 1.05 to about 1.2, about 1.05 to about 1.1, about 1.1 to about 1.5, about 1.1 to about 1.4, about 1.1 to about 1.35, about 1.1 to about 1.3, about 1.1 to about 1.25, about 1.1 to about 1.2, about 1.15 to about 1.5, about 1.15 to about 1.4, about 1.15 to about 1.35, about 1.15 to about 1.3, about 1.15 to about 1.25, or about 1.15 to about 1.2. In some embodiments, the silicon boron nitride layer contains about 60 at% to about 80 at% of boron bonded to silicon and about 20 at% to about 40 at% of boron bonded to nitrogen.

[0037] In one or more embodiments, the silicon boron nitride layer has a density of less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 The leakage current is approximately 5 × 10⁻⁶ at 1.5 MV / cm. -11 A / cm 2 Approximately 6×10 -11 A / cm 2 Approximately 8×10 -11 A / cm 2 Approximately 9×10 -11 A / cm 2 Or approximately 1×10 -10 A / cm 2 Up to approximately 2×10 at 1.5 MV / cm -10 A / cm 2 Approximately 6×10 -10 A / cm 2 Approximately 7.5 × 10 -10 A / cm 2 Approximately 8×10 -10 A / cm 2 Or approximately 9.9 × 10 -10 A / cm 2 The leakage current. In some examples, the silicon boron nitride layer has a leakage current of approximately 5 × 10⁻⁶ at 1.5 MV / cm. -11 A / cm 2 To approximately 9.9 × 10 -10 A / cm 2 Or approximately 1×10 at 1.5 MV / cm-10 A / cm 2 Approximately 7×10 -10 A / cm 2 Leakage current.

[0038] In one or more examples, the silicon boron nitride layer contains about 10 at% to about 50 at% boron, has a nitrogen to silicon atomic ratio of about 1.05 to about 1.5, and has a nitrogen content of less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 The leakage current. In other examples, the silicon boron nitride layer contains about 20 at% to about 35 at% boron, has a nitrogen to silicon atomic ratio of about 1.1 to about 1.4, and has about 5 × 10⁻⁶ at 1.5 MV / cm. -11 A / cm 2 Approximately 9.9 × 10 -10 A / cm 2 Leakage current.

[0039] The silicon boron nitride layer has approximately about about about or about To date about about about about about about about about or about The thickness. For example, the silicon boron nitride layer has approximately... to approximately about to approximately about to approximately about to approximately about to approximately about To date about To date about To date about To date about To date about To date about To date about To date about To date about To date about To date about To date about to approximately about to approximately about to approximately about to approximately about to approximately about to approximately about to approximately about to approximately about to approximately Or about to approximately The thickness.

[0040] In some examples, the silicon boron nitride layer is a stop layer and has approximately about about about or about To date about about or about The thickness. For example, the stop layer contains silicon boron nitride and has approximately [missing information - likely a thickness value]. to approximately about to approximately or about to approximately The thickness is [missing information]. In other examples, the silicon boron nitride layer is a support layer and has approximately [missing information]. about about about or about to approximately about about about about about about about or about The thickness. For example, the support layer contains silicon boron nitride and has approximately... To date about To date or about To date The thickness.

[0041] Figure 1 This is a schematic cross-sectional view of a process chamber 100 (such as a PE-CVD chamber) used during one or more methods for forming silicon boron nitride materials and layers. The process chamber 100 includes a chamber body 102 and an inlet manifold 106. The chamber body 102 is coupled to a vacuum pump 104, and the inlet manifold 106 is coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise contains a process region 112, which includes a base 114 disposed therein to support a substrate 101. The base 114 includes a heating element (not shown) and a mechanism (not shown) for holding the substrate 101 on the base 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clip, or the like. The base 114 is coupled to and movably disposed in the process area 112 by a rod 116 connected to a lifting chamber (not shown), which moves the base 114 between an elevated processing position and a lowered position, thereby facilitating the transfer of the substrate 101 into and out of the process chamber 100 through the opening 118 of the chamber body 102.

[0042] A first airflow controller 120 (such as a mass flow control (MFC) device) is disposed between the first gas source 108 and the input manifold 106 to control the first airflow of the first process gas from the first gas source 108 to the nozzle assembly 124 for distributing the first process gas over the process region 112. The nozzle assembly may include a panel 121, a baffle 123, and a gas chamber 125, such as... Figure 1 As depicted. The first process gas and the second process gas can be maintained separately via the inlet manifold 106 and then combined directly upstream of the gas tank 125.

[0043] In one or more examples, a first process gas is delivered from a first gas source 108 via an input manifold 106 via a first gas flow through line 131, a second process gas is delivered from a second gas source 110 via an input manifold 106 via a second gas flow through line 133, and the first gas flow through line 131 and the second gas flow through line 133 are combined to generate a third gas flow through line 135 before being introduced into gas tank 125 and ultimately into process region 112.

[0044] The third process gas flow via line 135 is maintained at a sufficiently low temperature to prevent precursors (e.g., diborane, silane, and / or ammonia) from reacting in the line and causing dust or particulate generation throughout the nozzle assembly 124, process area 112, and / or substrate 101. In some examples, the third process gas flow via line 135 is maintained at a temperature below 165°C, such as about 20°C, about 25°C, about 35°C, about 50°C, about 65°C, about 90°C, or about 100°C to about 110°C, about 125°C, about 135°C, about 150°C, about 160°C, or about 164°C. For example, the third process gas is maintained via the third gas flow through line 135 at a temperature of about 20°C to less than 165°C, about 50°C to less than 165°C, about 75°C to less than 165°C, about 90°C to less than 165°C, about 100°C to less than 165°C, about 120°C to less than 165°C, about 150°C to less than 165°C, about 20°C to about 160°C, about 50°C to about 160°C, about 75°C to about 160°C, about 90°C to about 160°C, about 100°C to about 160°C, about 120°C to about 160°C, about 150°C to about 160°C, about 20°C to about 140°C, about 50°C to about 140°C, about 75°C to about 140°C, about 90°C to about 140°C, about 100°C to about 140°C, or about 120°C to about 140°C.

[0045] According to one or more embodiments that can be combined with other embodiments described herein, the first process gas comprises at least one or more silicon-containing precursors, one or more nitrogen-containing precursors, and one or more carrier gases and / or process gases (e.g., helium, argon, hydrogen, and / or nitrogen). For example, the first process gas comprises silane (SiH4), ammonia (NH3), helium (He), nitrogen (N2), argon (Ar), and hydrogen (H2). A second controller 122 is disposed between the second gas source 110 and the input manifold 106 to control a second flow of the second process gas from the second gas source 110 to the nozzle assembly 124 for distributing the second process gas throughout the process region 112. According to one or more embodiments that can be combined with other embodiments described herein, the second process gas comprises at least one or more boron-containing precursors and hydrogen, such as a mixture of diborane (B2H6) and hydrogen (H2).

[0046] Nozzle assembly 124 is coupled to and in fluid communication with remote plasma system (RPS) 105. RPS 105 is used to form plasma in process region 112 from first and second process gases in process region 112. In some examples, plasma is ignited or otherwise generated in RPS 105 located outside chamber body 102. Plasma is delivered or otherwise introduced into process region 112 while a silicon boron nitride layer is deposited on substrate 101.

[0047] A third gas source 128 may be coupled to the chamber body 102 to provide additional process gases (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure within the process region 112. A controller 130 is coupled to the process chamber 100 and configured to control the process conditions of the process chamber 100 during deposition processes or other processes.

[0048] Figure 2 This is a schematic cross-sectional view of a process chamber 200 (such as a PE-CVD chamber) used for forming a silicon boron nitride layer, as described and discussed herein in other embodiments. The process chamber 200 includes a chamber body 102 and a manifold 106. The chamber body 102 is coupled to a vacuum pump 104, and the manifold 106 is coupled to a first gas source 108 and a second gas source 110. The chamber body 102 defines or otherwise contains a process region 112, which includes a base 114 disposed therein to support a substrate 101. The base 114 includes a heating element (not shown) and a mechanism (not shown) for holding the substrate 101 on the base 114, such as an electrostatic chuck, a vacuum chuck, a substrate holding clip, or the like. The base 114 is coupled to and movably disposed in the process area 112 by a rod 116 connected to a lifting chamber (not shown), which moves the base 114 between an elevated processing position and a lowered position, facilitating the transfer of the substrate 101 into and out of the process chamber 200 through an opening 118 in the chamber body 102.

[0049] A first flow controller 120 (such as a mass flow control (MFC) device) is disposed between a first gas source 108 and an input manifold 106 to control a first flow of first process gas from the first gas source 108 to a nozzle assembly 124 for distributing the first process gas across process region 112. According to one or more embodiments that may be combined with other embodiments described herein, the first process gas includes at least silane (SiH4), ammonia (NH3), helium (He), nitrogen (N2), argon (Ar), and hydrogen (H2). A second controller 122 is disposed between a second gas source 110 and an input manifold 106 to control a second flow of second process gas from the second gas source 110 to the nozzle assembly 124 for distributing the second process gas throughout process region 112. According to one or more embodiments that may be combined with other embodiments described herein, the second process gas includes at least diborane (B2H6) and hydrogen (H2). The nozzle assembly 124 is coupled to a radio frequency (RF) power source 126 for forming plasma in process region 112 by the first and second process gases in process region 112. A third gas source 128 may be coupled to the chamber body 102 to provide additional process gases (e.g., argon, helium, nitrogen, or combinations thereof) to control the pressure within the process region 112. A controller 130 is coupled to the process chamber 200 and configured to control various aspects of the process chamber 200 during processing.

[0050] Figure 3 This is a flowchart of method 300 for forming a silicon boron nitride layer. For clarity, please refer to... Figure 2 To describe Figure 3 However, it should be noted that chambers other than process chambers 100 and 200 can be used in combination with method 300. At operation 301, substrate 101 is positioned in process region 112 of process chambers 100 and 200. Substrate 101 is positioned between base 114 and nozzle assembly 124 at a process distance of approximately 100 mils (approximately 2.5 mm) to approximately 5000 mils (approximately 127 mm) or approximately 200 mils (approximately 5 mm) to approximately 1000 mils (approximately 25.4 mm). At operation 302, process region 112 is heated to a deposition temperature of approximately 575°C or lower. The deposition temperature is maintained during method 300. According to embodiments that can be combined with other embodiments described herein, process region 112 with a deposition temperature of approximately 550°C or lower is obtained by heating base 114. For example, the deposition temperature is approximately 225°C to approximately 575°C. During method 300, process region 112 is maintained at a pressure of about 2 Torr to about 8 Torr or about 3 Torr to about 6 Torr.

[0051] At operation 303, a first gas flow of a first process gas is supplied to process region 112. The first gas flow of the first process gas comprises silane at about 0 sccm to about 2000 sccm or about 1 sccm to about 500 sccm, ammonia at about 0 sccm to about 1000 sccm or about 10 sccm to about 5000 sccm, helium at about 0 sccm to about 50000 sccm or about 500 sccm to about 20000 sccm, nitrogen (N2) at about 0 sccm to about 50000 sccm or about 5000 sccm to about 25000 sccm, argon at about 0 sccm to about 50000 sccm or about 50 sccm to about 10000 sccm, and hydrogen (H2) at about 0 sccm to about 50000 sccm or about 50 sccm to about 20000 sccm. At operation 304, the first gas flow of the first process gas is interrupted. At operation 305, a plasma is formed simultaneously with the supply of a second gas flow of a second process gas to process region 112. According to embodiments that can be combined with other embodiments described herein, plasma is introduced and / or generated in the process region via RPS 105 in process chamber 100 or via an RF power source supplied from RF power source 126 to nozzle assembly 124 in process chamber 200. A second gas flow of a second process gas comprises about 0 sccm to about 10000 sccm or about 1 sccm to about 5000 sccm. About 2 mol% to about 15 mol% of the second process gas is diborane, and the remainder is hydrogen (H2). Method 300 forms a silicon boron nitride layer having a boron concentration of about 10 at% to about 50 at% or about 10 at% to about 20 at%, and a leakage current of less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 .

[0052] Figure 4A capacitor device 400 comprising one or more silicon boron nitride layers or materials is depicted, said one or more silicon boron nitride layers or materials being deposited or otherwise formed on a substrate according to one or more embodiments described and discussed herein. The capacitor device 400 is formed in a dielectric layer 402 disposed on the substrate. The dielectric layer 402 may be or comprise one or more dielectric materials, such as silicon (e.g., amorphous silicon). A nitride stop layer 404 is disposed on the walls of vias formed within the dielectric layer 402 and on metal contacts 406. The nitride stop layer 404 contains one or more metal nitride materials, such as titanium nitride, tantalum nitride, tungsten nitride, their silicides, their dopants, or any combination thereof. The metal contacts 406 contain copper, tungsten, aluminum, chromium, cobalt, their alloys, or any combination thereof. An oxide layer 410 is contained within the nitride stop layer 404 and contains one or more holes or voids 408 defined by or otherwise formed in the oxide layer 410. The oxide layer may be or include silicon oxide or a dopant thereof. A stop layer 420 containing silicon boron nitride may be disposed in the lower portion of the capacitor device 400, a support layer 422 containing silicon boron nitride may be disposed in the middle portion of the capacitor device 400, and a support layer 422 containing silicon boron nitride may be disposed in the upper portion of the capacitor device 400, such as... Figure 4 The description.

[0053] In one or more embodiments, a method for forming a silicon boron nitride layer includes: positioning a substrate on a pedestal in a process region within a process chamber; and introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region. The first gas flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, hydrogen (H2), and at least two gases selected from argon, helium, nitrogen (N2), or any combination thereof. The method further includes simultaneously forming a plasma with the first gas flow of the first process gas and the second gas flow of the second process gas arriving at the process region, and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

[0054] In other embodiments, a method for forming a silicon boron nitride layer includes: positioning a substrate on a pedestal in a process region within a process chamber; heating the pedestal holding the substrate to a deposition temperature; maintaining the process region under the process pressure described and discussed above; and introducing a first gas flow of a first process gas into the process region. The first gas flow of the first process gas contains one or more silicon-containing precursors, one or more nitrogen-containing precursors, helium, nitrogen (N2), argon, and hydrogen (H2). The method further includes: interrupting the first gas flow of the first process gas; simultaneously forming a plasma with a second gas flow of a second process gas containing one or more boron-containing precursors and hydrogen (H2) arriving at the process region; and forming a silicon boron nitride layer on the substrate.

[0055] In summary, this provides a method for forming boron concentrations of approximately 20 at% to approximately 40 at% and less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 A method for reducing leakage current in silicon boron nitride layers. The use of hydrogen allows for the formation of nitrogen-rich, silicon-rich, and boron-rich layers. Hydrogen breaks Si-H bonds to remove hydrogen within the layer and generate dangling bonds, while process gases react with the active surfaces of the substrate (e.g., dangling bonds) to generate Si-Si, Si-N, and Si-B bonds.

[0056] Embodiments of this disclosure further relate to any one or more of the following paragraphs 1-35:

[0057] 1. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a process region within a process chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region, wherein: the first gas flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, and nitrogen (N2) having a flow rate of about 5000 sccm to about 25000 sccm. The process gas comprises: argon having a flow rate of about 50 sccm to about 10,000 sccm; hydrogen (H2) having a flow rate of about 50 sccm to about 20,000 sccm; and a second gas flow comprising: about 2 mol% to about 15 mol% of diborane, about 85 mol% to about 98 mol% of hydrogen (H2) and a flow rate of about 1 sccm to about 5,000 sccm; forming a plasma simultaneously with the first gas flow and the second gas flow reaching the process area; and exposing the substrate to the first process gas, the second process gas and the plasma to deposit a silicon boron nitride layer on the substrate.

[0058] 2. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a base in a process region within a process chamber; introducing a first gas flow of a first process gas and a second gas flow of a second process gas into the process region, wherein: the first gas flow of the first process gas comprises a silicon-containing precursor, a nitrogen-containing precursor, hydrogen (H2), and at least two gases selected from the group consisting of argon, helium, nitrogen (N2), and any combination thereof; and the second gas flow of the second process gas comprises: about 2 mol% to about 15 mol% of diborane, about 85 mol% to about 98 mol% of... The process involves the application of hydrogen (H2) at a flow rate of approximately 1 sccm to approximately 5000 sccm; the simultaneous formation of a plasma with a first gas flow rate of a first process gas and a second gas flow rate of a second process gas reaching the process area; and the exposure of a substrate to the first process gas, the second process gas, and the plasma to deposit a silicon boron nitride layer on the substrate, wherein the silicon boron nitride layer comprises approximately 10 atomic percent (at%) to approximately 50 at% boron, wherein the silicon boron nitride layer has an atomic ratio of nitrogen to silicon of approximately 1.05 to approximately 1.5, and wherein the silicon boron nitride layer has a nitrogen content of less than 1 × 10⁻⁶ at 1.5 MV / cm. -9 A / cm 2 Leakage current.

[0059] 3. A method for forming a silicon boron nitride layer, comprising: positioning a substrate on a pedestal in a process region within a process chamber; heating the pedestal holding the substrate to a deposition temperature of about 225°C to about 575°C; maintaining the process region at a pressure of about 2 Torr to about 8 Torr; introducing a first gas flow of a first process gas into the process region, wherein the first gas flow of the first process gas comprises: silane having a flow rate of about 1 sccm to about 500 sccm, ammonia having a flow rate of about 10 sccm to about 5000 sccm, helium having a flow rate of about 500 sccm to about 20000 sccm, and a mixture having a flow rate of about 5000 sccm to about 5000 sccm. The process includes: nitrogen (N2) at a flow rate of about 25,000 sccm, argon at a flow rate of about 50 sccm to about 10,000 sccm, and hydrogen (H2) at a flow rate of about 50 sccm to about 20,000 sccm; interrupting a first gas flow of a first process gas; simultaneously forming a plasma with a second gas flow of a second process gas reaching the process region, wherein the second gas flow of the second process gas has a flow rate of about 1 sccm to about 5,000 sccm and includes about 2 mol% to about 15 mol% of diborane and about 85 mol% to about 98 mol% of hydrogen (H2); and forming a silicon boron nitride layer on a substrate.

[0060] 4. The method according to any of paragraphs 1-3, wherein the silicon boron nitride layer comprises about 10 atomic percent (at%) to about 50 at%) boron.

[0061] 5. The method according to any of paragraphs 1-4, wherein the silicon boron nitride layer comprises about 10 at% to about 20 at% boron.

[0062] 6. The method according to any one of paragraphs 1-5, wherein the silicon boron nitride layer comprises about 20 at% to about 30 at% boron.

[0063] 7. The method according to any of paragraphs 1-6, wherein the silicon boron nitride layer comprises about 15 at% to about 30 at% boron.

[0064] 8. The method according to any of paragraphs 1-7, wherein the silicon boron nitride layer comprises about 15 at% to about 20 at% boron.

[0065] 9. The method according to any of paragraphs 1-8, wherein the boron silicon nitride layer has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.5.

[0066] 10. The method according to any of paragraphs 1-9, wherein the boron silicon nitride layer has an atomic ratio of nitrogen to silicon of about 1.1 to about 1.4.

[0067] 11. The method according to any of paragraphs 1-10, wherein the boron silicon nitride layer has an atomic ratio of nitrogen to silicon of about 1.15 to about 1.35.

[0068] 12. The method according to any of paragraphs 1-11, wherein the silicon boron nitride layer comprises about 5 at% to about 15 at% of hydrogen.

[0069] 13. The method according to any one of paragraphs 1-12, wherein at 1.5 MV / cm, the silicon boron nitride layer has a density of less than 1 × 10⁻⁶. -9 A / cm 2 Leakage current.

[0070] 14. The method according to any of paragraphs 1-13, wherein the boron nitride layer has approximately 5 × 10⁻⁶ MW⁻¹ at 1.5 MV / cm. -11 A / cm 2 To approximately 9.9 × 10 -10 A / cm 2 Leakage current.

[0071] 15. The method according to any of paragraphs 1-14, wherein the silicon boron nitride layer has a density of approximately 1 × 10⁻⁶ at 1.5 MV / cm. -10 A / cm 2 Approximately 7×10 -10 A / cm 2 Leakage current.

[0072] According to the method of any of paragraphs 1-15, the silicon boron nitride layer comprises: about 60 at% to about 80 at% of boron bonded to silicon; and about 20 at% to about 40 at% of boron bonded to nitrogen.

[0073] 17. The method according to any of paragraphs 1-16, wherein the deposition temperature is about 350°C to about 560°C.

[0074] 18. The method according to any of paragraphs 1-17, wherein the deposition temperature is about 450°C to about 550°C.

[0075] 19. The method according to any of paragraphs 1-18, wherein a first gas flow of a first process gas and a second gas flow of a second process gas are combined before being introduced into the process region to produce a third gas flow of a third process gas.

[0076] 20. The method according to any of paragraphs 1-19, wherein the third gas stream of the third process gas is maintained at a temperature of about 20°C to less than 165°C.

[0077] 21. The method according to any one of paragraphs 1-20, wherein the first gas stream of the first process gas comprises: silane having a flow rate of about 10 sccm to about 250 sccm, ammonia having a flow rate of about 50 sccm to about 2000 sccm, helium having a flow rate of about 750 sccm to about 15000 sccm, nitrogen having a flow rate of about 10000 sccm to about 20000 sccm, argon having a flow rate of about 200 sccm to about 7500 sccm, and hydrogen having a flow rate of 200 sccm to 15000 sccm.

[0078] 22. The method according to any one of paragraphs 1-21, wherein the first gas flow of the first process gas comprises: silane having a flow rate of about 20 sccm to about 100 sccm, ammonia having a flow rate of about 100 sccm to about 1000 sccm, helium having a flow rate of about 1000 sccm to about 10000 sccm, nitrogen having a flow rate of about 12000 sccm to about 18000 sccm, argon having a flow rate of about 500 sccm to about 5000 sccm, and hydrogen having a flow rate of about 500 sccm to about 10000 sccm.

[0079] 23. The method according to any one of paragraphs 1-22, wherein the second gas stream of the second process gas comprises: about 3 mol% to about 12 mol% of diborane, about 88 mol% to about 97 mol% of hydrogen, and a flow rate of about 5 sccm to about 2000 sccm.

[0080] 24. The method according to any one of paragraphs 1-23, wherein the second gas stream of the second process gas comprises: about 5 mol% to about 10 mol% of diborane, about 90 mol% to about 95 mol% of hydrogen, and a flow rate of about 10 sccm to about 1000 sccm.

[0081] 25. The method according to any one of paragraphs 1-24 further includes maintaining the process region at a pressure of about 2 Torr to about 8 Torr.

[0082] 26. The method according to any of paragraphs 1-25, wherein the base is positioned between the base of the process chamber and the nozzle at a process distance, and wherein the process distance is about 200 mils to about 1000 mils.

[0083] 27. The method according to any of paragraphs 1-26, wherein the silicon boron nitride layer is located in a capacitor device disposed on a substrate.

[0084] 28. The method according to any of paragraphs 1-27, wherein the silicon boron nitride layer is a support layer for the capacitor device.

[0085] 29. The method according to any of paragraphs 1-28, wherein the silicon boron nitride layer is a stop layer of the capacitor device.

[0086] 30. The method according to any of paragraphs 1-29, wherein the silicon boron nitride layer has approximately To date The thickness.

[0087] 31. The method according to any of paragraphs 1-30, wherein the silicon boron nitride layer is a stop layer and has approximately To date The thickness, or approximately The thickness.

[0088] 32. The method according to any of paragraphs 1-31, wherein the silicon boron nitride layer is a support layer and has approximately To date The thickness, or approximately The thickness.

[0089] 33. The method according to any one of paragraphs 1-32, further comprising: generating plasma in a remote plasma system disposed outside a process chamber; and delivering the plasma to a process region while depositing a silicon boron nitride layer on a substrate.

[0090] 34. The method according to any one of paragraphs 1-33, wherein the silicon boron nitride layer comprises about 20 at% to about 35 at% boron, wherein the silicon boron nitride has an atomic ratio of nitrogen to silicon of about 1.1 to about 1.4, and wherein the silicon boron nitride layer has about 5 × 10⁻⁶ atoms at 1.5 MV / cm. -11 A / cm 2 To approximately 9.9 × 10 -10 A / cm 2 Leakage current.

[0091] 35. A silicon boron nitride layer or silicon boron nitride material formed by any of the methods described in paragraphs 1-34.

[0092] Although the foregoing describes embodiments of this disclosure, other and further embodiments may be designed without departing from its essential scope, which is defined by the appended claims. All documents described herein are incorporated by reference, including any priority documents and / or test procedures not contradicting this document. It will be apparent from the foregoing general description and specific embodiments that various modifications may be made without departing from the spirit and scope of this disclosure, despite the various forms shown and described herein. Therefore, this disclosure is not intended to be limited thereto. Similarly, for purposes of U.S. law, the term “comprising” is considered synonymous with the term “including.” Likewise, whenever the transitional phrase “comprising” is added before a composition, element, or group of elements, it is understood that we also contemplate using the transitional phrases “consistently consisting of,” “comprises of,” “selected from the group consisting of,” or “is” before listing the same composition, element, or group of elements, and vice versa.

[0093] Certain embodiments and features have been described using a set of upper and lower numerical limits. It should be understood that, unless otherwise stated, the scope covers a range including any combination of two values, such as any lower value combined with any higher value, any combination of two lower values, and / or any combination of two higher values. Certain lower, upper, and range limits appear in one or more of the appended claims.

Claims

1. A capacitor device, comprising: A stop layer comprising silicon boron nitride and disposed on a substrate, wherein the silicon boron nitride comprises about 18 atomic percent (at%) to about 50 at% boron; A dielectric layer disposed on the stop layer; A via, wherein the via is formed within the dielectric layer and the stop layer; A metal contact is disposed at the bottom of the through hole, wherein each through hole includes one of the metal contacts; A nitride barrier layer, comprising a metal nitride material and disposed on the wall of the through-hole and on the metal contact; and An oxide layer disposed within the via on the nitride barrier layer, wherein the oxide layer includes one or more pores or voids formed therein.

2. The capacitor device of claim 1, further comprising a first support layer disposed above the stop layer, wherein a first portion of the dielectric layer is between the stop layer and the first support layer, and wherein the first support layer comprises the silicon boron nitride.

3. The capacitor device of claim 2, further comprising a second support disposed above the first support layer, wherein a second portion of the dielectric layer is between the first support layer and the second support layer, and wherein the second support layer comprises the silicon boron nitride.

4. The capacitor device of claim 1, wherein the silicon boron nitride comprises about 20 at% to about 45 at% boron.

5. The capacitor device of claim 1, wherein the silicon boron nitride comprises about 20 at% to about 35 at% boron.

6. The capacitor device as claimed in claim 1, wherein, The silicon boron nitride has an atomic ratio of nitrogen to silicon of about 1.05 to about 1.

5.

7. The capacitor device as claimed in claim 1, wherein, The boron silicon nitride has an atomic ratio of nitrogen to silicon of about 1.1 to about 1.

4.

8. The capacitor device as claimed in claim 1, wherein, The silicon boron nitride comprises about 5 at% to about 15 at% of hydrogen.

9. The capacitor device as claimed in claim 1, wherein, The silicon boron nitride has approximately 5 × 10⁻⁶ ppm at 1.5 MV / cm. - 11 A / cm 2 To approximately 9.9 × 10 -10 A / cm 2 Leakage current.

10. The capacitor device of claim 1, wherein the silicon boron nitride has a density of less than 1 × 10⁻⁶ at 1.5 MV / cm. - 9 A / cm 2 Leakage current.

11. The capacitor device as claimed in claim 1, wherein, The silicon boron nitride comprises: Boron bonded to silicon at approximately 60 at% to approximately 80 at%; and Boron bonded to nitrogen at approximately 20 at% to approximately 40 at% 12. The capacitor device as claimed in claim 1, wherein, The silicon boron nitride has approximately to approximately The thickness.

13. The capacitor device of claim 1, wherein the dielectric layer comprises amorphous silicon, and wherein the oxide layer comprises silicon oxide.

14. The capacitor device of claim 1, wherein the metal nitride material comprises titanium nitride, tantalum nitride, tungsten nitride, its silicide, its dopant, or any combination thereof.

15. The capacitor device of claim 1, wherein the metal contact comprises copper, tungsten, aluminum, chromium, cobalt, alloys thereof, or any combination thereof.

16. A capacitor device, comprising: A stop layer comprising silicon boron nitride and disposed on a substrate; A dielectric layer disposed on the stop layer; A via, wherein the via is formed within the dielectric layer and the stop layer; A metal contact is disposed at the bottom of the through-hole, wherein each through-hole includes one of the metal contacts; A barrier layer is disposed on the wall of the through hole and on the metal contact; An oxide layer disposed within the via on the barrier layer, wherein the oxide layer includes one or more pores or voids formed therein; A first support layer is disposed on the stop layer, wherein a first portion of the dielectric layer is between the stop layer and the first support layer; as well as A second support layer is disposed on the first support layer, wherein a second portion of the dielectric layer is located between the first support layer and the second support layer.

17. The capacitor device of claim 16, wherein, Each of the first support layer and the second support layer includes the silicon boron nitride.

18. The capacitor device of claim 17, wherein, The silicon boron nitride comprises about 18 atomic percent (at%) to about 50 at%.

19. A capacitor device, comprising: A stop layer comprising silicon boron nitride and disposed on a substrate, wherein the silicon boron nitride comprises about 18 atomic percent (at%) to about 50 at% boron; A dielectric layer disposed on the stop layer; A via, wherein the via is formed within the dielectric layer and the stop layer; A metal contact is disposed at the bottom of the through-hole, wherein each through-hole includes one of the metal contacts; A barrier layer, wherein the barrier layer is disposed on the wall of the through-hole and on the metal contact; and An oxide layer disposed within the via on the barrier layer, wherein the oxide layer includes one or more pores or voids formed therein.

20. The capacitor device of claim 19, wherein the silicon boron nitride comprises: Boron of approximately 20 at% to approximately 45 at%; Approximately 5 at% to approximately 15 at% of hydrogen; Boron bonded to silicon at approximately 60 at% to approximately 80 at%; Approximately 20 at% to approximately 40 at% of boron bonded to nitrogen; The atomic ratio of nitrogen to silicon is approximately 1.05 to approximately 1.

5. as well as At 1.5 MV / cm, approximately 5 × 10 -11 A / cm 2 To approximately 9.9 × 10 -10 A / cm 2 Leakage current.

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