Power module with cover contact element and cover sintering compound

Abstract

The invention relates to a power module with a cover contact element and a cover sintering compound. In order to achieve a non-releasable electrical and thermal connection of the at least one power semiconductor even at high temperatures such as above 230 DEG C and / or at high thermal mechanical loads and to increase the power density and / or the service life and / or the operational safety of the power module in this way, a first sintered compound layer (20) is applied to the circuit carrier (10), at least one power semiconductor (30) is applied to at least one sub-section (20a) of the first sintered compound layer (20), at least one sub-section (21a) of the second sintered compound layer (21) is applied to the at least one power semiconductor (30), and a sub-section (40a) of the electrical cover contact element (40) is applied to the at least one sub-section (21a) of the second sintered compound layer (21).

Description

Technical Field

[0001] The present invention relates to a power module, for example for an inverter and / or converter and / or power switch and / or motor control unit, for example for an electrically driven vehicle. Background Technology

[0002] Power modules with power semiconductors are also used in energy converters, such as inverters and / or converters and / or power switches and / or motor control units, for example in electric vehicles.

[0003] Typical solders usually have a melting temperature in the range of 210°C to 260°C, while high-lead solders can have a melting temperature as high as 300°C.

[0004] However, high temperatures, especially those exceeding 230°C and even briefly exceeding 400°C, and high thermomechanical loads may occur during the operation of the power module. This may cause the brazing compound to melt and dissolve, which could lead to a reduction in the module's power density and / or lifespan and / or operational safety. Summary of the Invention

[0005] The subject of this invention is a power module, for example, used in inverters and / or converters and / or power switches and / or motor control units, such as for electrically driven vehicles. Here, the power module particularly has a circuit carrier.

[0006] Here, the first sintered compound layer is applied, particularly to the circuit carrier. Here, at least one power semiconductor is applied, particularly to at least one sub-segment of the first sintered compound layer, especially to the first sub-segment. Here, at least one sub-segment of the second sintered compound layer is applied, particularly to at least one power semiconductor. Here, a sub-segment of the electrical cover contact element, especially the first sub-segment, is applied to at least one sub-segment of the second sintered compound layer.

[0007] Sintering compounds can be understood in particular as compounds formed or potentially formed by sintering metal particles, such as silver and / or copper particles, at, for example, higher temperatures, especially below the melting temperature, and at, for example, higher pressures, in the range of 5 MPa to 30 MPa, preferably in the range of 10 or 15 to 25 MPa.

[0008] Electrical cover contact elements can be understood in particular as electrical contact elements designed for upper-side electrical contact of power semiconductors, which, for example, are applied to or can be applied to the upper side of the power semiconductor. Such electrical cover contact elements may also be referred to, for example, as top contact elements or top connections. For example, electrical cover contact elements can be implemented and / or designed as clips.

[0009] Because sintered compounds have significantly higher melting temperatures than brazing compounds—for example, silver sintered compounds can have melting points of approximately 962°C, or copper sintered compounds can even have melting points of approximately 1085°C—using a sintered compound layer, for example, instead of a brazing compound layer, can advantageously achieve a connection between at least one power semiconductor and the circuit carrier, and especially between the electrical cover contact element and at least one power semiconductor, that is not easily released even at high temperatures and / or under high thermomechanical loads. This also improves the power density and / or lifespan and / or operational safety of the power module, particularly at high temperatures and / or under high thermomechanical loads. Furthermore, sintered compounds advantageously possess relatively high thermal conductivity, for example, on the order of >100 W / mK at room temperature, and this can be achieved in layer thicknesses of approximately 10 to 100 μm. Therefore, not only electrical connections of power semiconductors can be advantageously achieved through sintered compound layers, but also thermal connections, and, for example, heat dissipation of the power semiconductors. Moreover, it is advantageous to protect assembly and connection techniques under special short-term operating conditions with high temperatures, such as in the event of a short circuit. Therefore, advantageously, when necessary, costly and / or limiting measures for limiting temperature and / or reducing temperature load can be omitted, for example, by reducing resistance by increasing the surface area of ​​the active semiconductor.

[0010] One or more power semiconductors can be advantageously and easily electrically connected from above via the cover contact element. Furthermore, at least one power semiconductor can also be thermally connected or cooled via the cover contact element. For example, a relatively high heat block can be connected via the cover contact element through a connection of a sintered compound layer, and in this way, at least one power semiconductor can be protected under short-term loads.

[0011] Therefore, in general, it is advantageous to achieve an electrical and thermal connection of at least one power semiconductor that is not loosened even at high temperatures (e.g., above 230°C) and / or under high thermomechanical loads, and in this way, especially at high temperatures and / or under high thermomechanical loads, improves the power density and / or lifespan and / or operational safety of the power module, for example, compared to modules with brazing compounds rather than sintering compounds.

[0012] Such power modules, for example, without a gating block, and especially still without a gating block, can be used as necessary. However, in particular, such a power module can also be a precursor to a power module with a gating block, especially in which at least one power semiconductor is cast using a gating block.

[0013] Within the scope of the embodiments, the cover contact element is implemented and / or formed planarly. For example, the cover contact element may be implemented and / or formed as a contact plate. Planar connection can advantageously increase the power density of the power module. For example, a large portion of the surface of at least one power semiconductor can be electrically and thermally connected through the cover contact element, allowing the power semiconductor to advantageously operate in a uniform state, or the temperature in the power semiconductor can be homogenized and, for example, hot spots can be avoided.

[0014] In other embodiments, the cover contact element is designed to electrically contact two or more power semiconductors, particularly from above or on the upper side of the power semiconductors. Thus, two or more power semiconductors can advantageously be electrically connected simultaneously and / or equally via the cover contact element, and, for example, also thermally connected, in a particularly simple and time-saving manner.

[0015] Within the scope of this embodiment's design, the cover contact element has at least one first sub-segment for electrical connection, particularly for electrical and thermal connection of power semiconductors. Specifically, the cover contact element may have two or more first sub-segments for electrical connection, particularly for electrical and thermal connection of the corresponding power semiconductors.

[0016] Furthermore, the cover contact element may have at least one second sub-section for electrical connection, especially electrical and thermal connection of the cover contact element (especially itself).

[0017] Within the scope of the specific design scheme of this embodiment, two or more first sub-segments of the electrical cover contact element are respectively applied on one of two or more sub-segments of the second sintered compound layer, said two or more sub-segments being respectively applied on one of two or more power semiconductors.

[0018] In other embodiments, the cover contact element is a power contact (source connection), a measurement contact (sensing connection), or a signal contact (signal and / or gate connection).

[0019] In other embodiments, the cover contact element comprises or is formed of copper and / or silver and / or steel. As explained by the advantages of combining sintered compound layers, copper and silver have high melting points and high electrical conductivity and, in particular, high thermal conductivity. Therefore, forming the cover contact element with copper and / or silver can further improve the power density and / or service life and / or operational safety of the power module, especially at high temperatures and / or under high thermomechanical loads. Advantageously, the steel can have a CTE adapted to SiC and / or Si, such that the thermomechanical load can be reduced by using steel in the cover contact element. If necessary, the cover contact element can be formed of coated steel, for example, steel coated with copper and / or silver.

[0020] Within the scope of other design schemes, at least one second sub-segment of the cover contact element is also electrically connected, particularly electrically and thermally connected, via a sintered compound layer. For example, at least one second sub-segment of the cover contact element may be electrically connected, particularly electrically and thermally connected, via a first sintered compound layer. For example, at least one second sub-segment of the cover contact element may be electrically connected, particularly electrically and thermally connected, via another sub-segment, particularly a second sub-segment, of the first sintered compound layer. Especially at high temperatures and / or under high thermomechanical loads, this manner can also advantageously further improve the power density and / or service life and / or operational safety of the power module.

[0021] Within the scope of a specific design, at least one second sub-segment of the cover contact element is formed and / or arranged beside and / or on the side of at least one first sub-segment of the cover contact element, and / or at least one second sub-segment of the cover contact element is electrically connected, particularly electrically and thermally, to the circuit carrier, especially on the side, for example via a sintered compound layer, for example via a first sintered compound layer. Therefore, it is advantageous to connect a large heat capacity capable of absorbing large amounts of heat and dissipating this large heat, particularly from at least one power semiconductor, particularly to the side or laterally. Therefore, it is advantageous to dissipate, for example, brief thermal loads above 400°C, from at least one power semiconductor and the circuit carrier, and this can further improve the power density and / or lifespan and / or operational safety of the power module, especially at high temperatures and / or under high thermomechanical loads. Furthermore, it is advantageous to minimize the structural height of the power module.

[0022] However, within the scope of other specific design schemes, at least one second sub-segment of the cover contact element is formed and / or arranged on and / or above at least one first sub-segment of the cover contact element, and / or at least one second sub-segment of the cover contact element is electrically connected, especially electrically and thermally connected, to other components, especially components different from the circuit carrier, such as electrical contacts, busbars, or housings, particularly from above. Therefore, it is advantageous to connect particularly large heat capacity, capable of absorbing large amounts of heat, and to dissipate this large heat, particularly from at least one power semiconductor and the circuit carrier, particularly upwards or on the upper side. Therefore, it is advantageous to dissipate, for example, brief thermal loads above 400°C, from at least one power semiconductor and the circuit carrier, and this manner can further improve the power density and / or service life and / or operational safety of the power module, especially at high temperatures and / or under high thermomechanical loads. Furthermore, it is advantageous to reduce, for example, the space requirements on the circuit carrier or the surface area of ​​the circuit carrier. For example, at least one sub-segment of another component, such as an electrical contact, busbar, or housing, may be arranged on at least one second sub-segment of the cover contact element. The sub-segment of the other component, such as an electrical contact, or busbar, arranged on at least one second sub-segment of the cover contact element, may be connected to at least one second sub-segment of the cover contact element, for example, by means of a welding compound, i.e., advantageously by direct welding contacts. If necessary, the other component, such as an electrical contact, busbar, or housing, may be connected to the circuit carrier, such as the metal layer of the circuit carrier, for example, by means of another welding compound, i.e., advantageously also by direct welding contacts.

[0023] In other embodiments, the first sintered compound layer and / or the second sintered compound layer comprise silver and / or copper or are formed of silver and / or copper.

[0024] In other embodiments, the first sintered compound layer and / or the second sintered compound layer have an average layer thickness (d) in the range of 10 μm to 100 μm, preferably in the range of 10 μm to 30 μm. 20 d 21 Therefore, advantageously, good electrical connections and good thermal connections (which in particular can be thermally and mechanically stable) can be achieved, especially in a cost-effective and / or structurally space-efficient manner.

[0025] In another embodiment, at least one power semiconductor has an average structural height (h) in the range of 70 μm to 300 μm. 30 ).

[0026] In another embodiment, the electrical cover contact element has an average material thickness (m) in the range of 100 μm to 2000 μm.40 Preferably, the electrical cover contact element has an average material thickness that is significantly greater than the average thickness of the first sintered compound layer (d). 20 ) and / or particularly significantly greater than the average layer thickness (d) of the second sintered compound layer 21 ) and / or particularly significantly greater than the average structural height (h) of at least one power semiconductor 30 Therefore, advantageously, the electrical cover contact element can provide high heat capacity and achieve good heat dissipation, and in this way, the temperature resistance of the power module is improved, for example, maximized, at least under short-term high temperature loads and / or special operating conditions, such as in the case of active short circuits. For example, the average material thickness of the electrical cover contact element can be at least two times, for example at least three times, four times, five times, or six times, and even at least seven times, the average thickness of the first sintered compound layer and / or the average thickness of the second sintered compound layer. For example, the average material thickness of the electrical cover contact element can be at least twice the average structural height of at least one power semiconductor.

[0027] In another embodiment, the circuit carrier has at least one metal layer. Here, the first sintered compound layer may be applied to the metal layer of the circuit carrier.

[0028] Within the scope of this embodiment's design, the metal layer comprises or is formed of copper. Copper has proven advantageous for electrical and electronic applications and can provide chemical bonding to the casting block through oxide formation. Therefore, it is advantageous to achieve increased power density and / or lifespan and / or operational safety of the power module. For example, the average layer thickness (d) of the metal layer... 11 d 11’ It can be in the range of 300μm to 2000μm.

[0029] In other embodiments, the circuit carrier further includes an insulating layer.

[0030] Within the scope of this embodiment's design, the insulating layer comprises inorganic materials, particularly ceramic materials and / or plastics. Specifically, the insulating layer can be formed from inorganic materials, particularly ceramic materials or plastics. The insulating layer may, for example, comprise nitride materials and / or carbide materials and / or oxide materials, such as silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN) and / or silicon carbide (SiC) and / or aluminum oxide (Al2O3) and / or magnesium oxide (MgO) and / or silicon oxide (SiO2) and / or beryllium oxide (BeO).

[0031] For example, the insulating layer may be formed of inorganic materials, especially ceramic materials, such as nitride materials, for example, silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN), or of plastics comprising at least one polymer and, for example, at least one inorganic filler, especially ceramic filler and / or oxide filler and / or nitride filler and / or carbide filler, such as aluminum oxide (Al2O3) and / or magnesium oxide (MgO) and / or silicon oxide (SiO2) and / or beryllium oxide (BeO) and / or silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN) and / or silicon carbide (SiC).

[0032] The circuit carrier can be, for example, a power substrate.

[0033] The circuit carrier can be, for example, AMB (Active Metal Brazing), which has, for example, an inorganic insulating layer, particularly a ceramic insulating layer, such as a nitride insulating layer, formed, for example, of silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN) and a metal layer brazed thereon. Here, the insulating layer can also be used as a carrier layer.

[0034] For example, the circuit carrier can also be DBC (Direct Bond Copper), which has, for example, an inorganic insulating layer, especially a ceramic insulating layer, such as a nitride insulating layer or an oxide insulating layer, formed, for example, of aluminum nitride (AlN) and / or silicon nitride (Si3N4) and / or boron nitride (BN) and / or aluminum oxide (Al2O3) and a metal layer (especially formed of copper or aluminum) applied thereon. Where necessary, the insulating layer can also serve as a carrier layer.

[0035] However, the circuit carrier can also be, for example, an IMS (Insulated Metallic Substrate). In particular, the insulating layer can be formed of plastic and, for example, include at least one polymer, and also, for example, at least one inorganic filler, especially a ceramic filler, such as oxide fillers and / or nitride fillers and / or carbide fillers, such as alumina (Al₂O₃) and / or magnesium oxide (MgO) and / or silicon oxide (SiO₂) and / or beryllium oxide (BeO) and / or silicon nitride (Si₃N₄) and / or aluminum nitride (AlN) and / or boron nitride (BN) and / or silicon carbide (SiC). Here, the metal layer can be applied to the insulating layer, for example, in the form of a thin film. Here, the insulating layer can be supported by a carrier layer (e.g., formed of aluminum).

[0036] Within the scope of another design scheme of this embodiment, the insulating layer has at least one first sub-segment coated with at least a first sub-segment of a metal layer, a second sub-segment coated with at least a second sub-segment of a metal layer, and at least one sub-segment without a metal layer on at least one side. On the one hand, the sub-segment without a metal layer can achieve electrical decoupling of the components of the power module, and if necessary, thermal decoupling of the components. On the other hand, since the insulating layer has a sub-segment without a metal layer and the material of the insulating layer can have better adhesion properties and, in particular, a higher proportion of components suitable for chemical bonding of the casting block applied thereto (e.g., in the form of oxide impurities in nitride and / or carbide materials and / or oxides in oxide materials and / or functional groups in organic materials, especially polymer materials), the sub-segment without a metal layer of the insulating layer can achieve improved adhesion and, in particular, further improvements in the chemical bonding of the casting block applied to the sub-segment without a metal layer of the insulating layer. Advantageously, the epoxide-based and / or other casting blocks, for example forming hard castings, can be chemically bonded, for example, to the oxide of a metal-free sub-segment of the insulating layer, and in this way, a particularly stable and especially particularly indestructible chemical bond can be achieved to the casting block applied thereon. At least one metal-free sub-segment of the insulating layer can also, for example, be without a sintered compound layer and / or without a power semiconductor.

[0037] The insulating layer may have a lower average layer thickness than the metal layer if necessary.

[0038] Within the scope of a particular implementation, at least one power semiconductor is applied to a first sub-segment of a first sintered compound layer or the first sub-segment of the first sub-segment, which is applied to a first sub-segment of a metal layer of a circuit carrier.

[0039] In its specific design, at least one second sub-segment of the cover contact element can be applied to a second sub-segment of the first sintered compound layer or to a second sub-segment of the metal layer of the circuit carrier. Therefore, advantageously, at least one power semiconductor can be electrically connected to the circuit carrier in a simple and efficient manner via the cover contact element and the sintered compound layer.

[0040] In another specific design embodiment, additional components, such as electrical contacts, busbars, or other sub-segments of the housing, can be connected to the circuit carrier, particularly the metal layer of the circuit carrier, via additional solder joints, for example, on the metal layer of the circuit carrier, for example, on the first or second sub-segment of the metal layer of the circuit carrier. Therefore, advantageously, at least one power semiconductor can be electrically connected to the circuit carrier in a simple and efficient manner via an electrical cover contact element, a sintered compound layer, and other components, while simultaneously dissipating heat from the at least one power semiconductor and the circuit carrier through the thermal capacity of the electrical cover contact element and the other components.

[0041] Within the scope of other design options, at least the power semiconductor includes or comprises a wide-bandgap semiconductor, such as SiC power semiconductor and / or GaN power semiconductor. Advantageously, such power semiconductors remain stable even at high temperatures and / or under special operating conditions, thereby further improving power density and / or lifespan and / or operational safety, especially at high temperatures and / or under high thermomechanical loads. Wide-bandgap semiconductors advantageously maintain functionality, particularly in short-pulse conditions and / or at short-term temperatures exceeding 400°C.

[0042] In another embodiment, the upper and / or lower sides of at least one power semiconductor are formed with and / or coated with a noble metal layer. Therefore, the electrical connections, particularly the electrical and thermal connections, of at least one power semiconductor can be further improved, and in this manner, the power density and / or lifespan and / or operational safety of the power module can be further increased.

[0043] In another embodiment, at least one power semiconductor is cast using a casting block. By using a casting block, at least one power semiconductor can be advantageously protected against environmental and / or dielectric influences and / or isolated. Furthermore, casting using a casting block, especially a hard casting, can absorb mechanical stress. Therefore, it is advantageous to further improve the service life and / or operational safety of the power module. The power density of the power module can also be advantageously further increased by using a casting block, which can have beneficial effects, for example, on the economical implementation of energy converters and / or in the field of electromobility.

[0044] Within the scope of this embodiment's design, the casting block is also applied to at least one metal-free sub-segment of the insulating layer. Therefore, advantageously, particularly good adhesion of the casting block can be achieved, for example, through the oxides in these sub-segments, thereby enabling a significantly improved lifespan and / or operational safety of the power module, and in particular, further increasing the power density of the power module, which can have beneficial effects, for example, on the economical implementation of energy converters and / or in the field of electromobility.

[0045] Within the scope of another design option of this embodiment, the casting block is a hard caster. A hard caster can advantageously absorb mechanical stress, thereby further improving the service life and / or operational safety of the power module. Furthermore, it is advantageous to further increase the power density of the power module, which can, for example, have a favorable effect on the economical implementation of the energy converter and / or in the field of electromobility. The hard caster can be, for example, an organic hard caster or a ceramic hard caster.

[0046] Within the scope of another design scheme of this embodiment, the electrical cover contact element is also at least partially cast using a casting block. Here, mechanical stress can also be absorbed by the casting block, thereby further improving the service life and / or operational safety and / or power density of the power module, and thus further improving, for example, the economical implementation of the energy converter and / or in the field of electromobility.

[0047] In its special design, the upper side of the electrical cover contact element is also at least partially, and if necessary, entirely cast using a casting block. Therefore, mechanical stress can advantageously be absorbed by the casting block in multiple directions.

[0048] In another particular design, the upper side of the electrical cover contact element is at least partially, and especially entirely, free of a gating block. Therefore, heat can be better dissipated via the upper side of the electrical cover contact element, and in particular, heat conduction via the gating block toward at least one power semiconductor can be reduced, for example, minimized.

[0049] In particular, the casting block, especially the hard casting, can be designed to form a chemical bond with the oxide. Therefore, it is advantageous to achieve a chemical bond between the casting block, especially the hard casting, and the non-metallic sub-segments of the circuit carrier, especially the insulating layer, and in this way, a particularly stable and especially unbreakable chemical bond can be achieved for the casting block.

[0050] For example, the casting block, especially the hard casting, can be based on organic and / or ceramic materials. For example, the casting block, especially the hard casting, can be based on epoxides or ceramics. In this way, chemical bonding between the casting block, especially the hard casting, and the oxide layer can be achieved.

[0051] In another design, the circuit carrier has a first metal layer on a first side and a second metal layer on a second side, particularly opposite the first side. Specifically, the first and second metal layers may be implemented and / or designed in the same or different manner as the aforementioned metal layers.

[0052] In another design, the circuit carrier has an insulating layer, wherein a first metal layer is applied to a first side of the insulating layer, and a second metal layer is applied to a second side of the insulating layer, particularly opposite to the first side. Here, the circuit carrier may be, for example, AMB (Active Metal Brazing) or DBC (Direct Bond Copper), which has, for example, an inorganic insulating layer, particularly a ceramic insulating layer, such as a nitride insulating layer. The inorganic insulating layer is formed, for example, of silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN) and / or aluminum oxide (Al2O3) and a metal layer applied thereon. Here, the insulating layer may also serve as a carrier layer.

[0053] In other design embodiments, the circuit carrier has a first insulating layer and a second insulating layer. Here, the first and second insulating layers may be implemented and / or formed in the same or different manner as the insulating layers described above. In particular, a first metal layer may be applied to the first insulating layer, and a second metal layer may be applied to the second insulating layer. Here, the circuit carrier may have a carrier layer, for example, formed of aluminum, between the first and second insulating layers. Here, the circuit carrier may be, for example, an IMS (Insulated Metallic Substrate). Here, the first and second insulating layers may be formed of plastic, and for example, include at least one polymer, and for example, at least one inorganic filler, especially a ceramic filler, such as oxide fillers and / or nitride fillers and / or carbide fillers, such as alumina (Al2O3) and / or magnesium oxide (MgO) and / or silicon oxide (SiO2) and / or beryllium oxide (BeO) and / or silicon nitride (Si3N4) and / or aluminum nitride (AlN) and / or boron nitride (BN) and / or silicon carbide (SiC). Here, the metal layer can be applied to the insulating layer, for example, in the form of a thin film.

[0054] Further technical features and advantages of the power module according to the invention are hereby clearly described with reference to the accompanying drawings. Attached Figure Description

[0055] Further advantages and advantageous designs of the subject matter of the invention are illustrated by the accompanying drawings and explained in the following description. It should be noted that the drawings are merely descriptive and do not limit the invention in any way.

[0056] Figure 1 A schematic cross-sectional view through an embodiment of a power module according to the invention is shown, the power module having an electrical cover contact element with a second sub-section having sides;

[0057] Figure 2 A schematic cross-sectional view through an embodiment of a power module according to the invention is shown, the power module having an electrical cover contact element with a second sub-section on the upper side; and

[0058] Figure 3 A schematic cross-sectional view is shown through an embodiment of a power module according to the invention, which has an electrical cover contact element with an upper second sub-section on which other components, such as busbars, are arranged. Detailed Implementation

[0059] Figure 1 An embodiment of a power module 100 according to the present invention is shown, which is used, for example, in an inverter, converter, and / or power switch, such as for an electrically driven vehicle. Here, the power module 100 has a circuit carrier 10.

[0060] Figure 1 As shown, a first sintered compound layer 20, for example formed of silver and / or copper, is applied to the circuit carrier 10. Here, a power semiconductor 30, such as a wide-bandgap semiconductor, such as a SiC or GaN power semiconductor, is applied to a sub-segment of the first sintered compound layer 20, particularly the first sub-segment 20a. At least one sub-segment 21a of a second sintered compound layer 21, for example formed of silver and / or copper, is then applied to the power semiconductor 30. Here, the upper side of the power semiconductor 30 may be composed of a noble metal layer (see...). Figure 2 and Figure 3 31) Form and / or coat with a noble metal layer to improve the adhesion of the second sintered compound layer 21.

[0061] Figure 1 It is also shown that a particular first sub-segment 40a of the electrical cover contact element 40, for example formed of copper and / or silver and / or steel, is applied to at least one sub-segment 21a of the second sintered compound layer 21. Here, the electrical cover contact element 40 is implemented and / or formed in a planar manner. For example, the electrical cover contact element 40 can be implemented and / or formed as a contact plate. For example, the electrical cover contact element 40 can be a power contact, a measurement contact, or a signal contact.

[0062] Figure 1 As shown, the cover contact element 40 has a first sub-segment 40a for electrically connecting the power semiconductor 30 and a second sub-segment 40b for electrically connecting the cover contact element 40.

[0063] exist Figure 1In the illustrated embodiment, a second sub-segment 40b of the cover contact element 40 is formed and / or arranged next to and / or on the side of the first sub-segment 40a of the cover contact element 40. Here, the second sub-segment 40b of the cover contact element 40 is electrically connected to the circuit carrier 10 on its side. Specifically, the second sub-segment 40b of the cover contact element 40 is electrically connected via the first sintered compound layer 20. In particular, the second sub-segment 40b of the cover contact element 40 is electrically connected via another sub-segment of the first sintered compound layer 20, especially the second sub-segment 20b.

[0064] Figure 1 It is also shown that the circuit carrier 10 has a first metal layer 11, an insulating layer 12, and a second metal layer 11'. For simplicity, Figure 1 The first sintered compound layer 20 is applied only to the first metal layer 11 of the circuit carrier 10. However, alternatively or additionally, in principle, Figure 1 The structure shown on the first metal layer 11 can also be implemented in the same or different ways on the second metal layer 11'.

[0065] Figure 1 As shown, the insulating layer 12 has a first sub-segment 12a coated with a first sub-segment 11a of the first metal layer 11, a second sub-segment 12b coated with a second sub-segment 11b of the first metal layer 11, and a sub-segment 12c without a metal layer on its side surface. Here, the power semiconductor 30 is applied to the first sub-segment 20a of the first sintered compound layer 20, which is applied to the first sub-region 11a of the first metal layer 11 of the circuit carrier 10. Here, the second sub-segment 40b of the electrical cover contact element 40 is applied to the second sub-segment 20b of the first sintered compound layer 20, which is applied to the second sub-segment 11b of the second metal layer 11 of the circuit carrier 10.

[0066] Figure 1 It is also shown that, in this embodiment, the power semiconductor 30 and the electrical cover contact element 40 are cast using a casting block 50. Here, the casting block 50 can be, in particular, a hard cast element. Figure 1 As shown, the casting block 50 is also applied here to the metal-free sub-segment 12c of the insulating layer 12. Figure 1 It is also shown that, in this embodiment, the upper side of the electrical cover contact element 40 is at least partially, and especially entirely, cast using the casting block 50.

[0067] at last, Figure 1 This indicates that the average layer thickness d of the first sintered compound layer 20 and / or the second sintered compound layer 21 is... 20 d 21 It can be significantly smaller than the average material thickness m of the power cover contact element 40.40 and / or especially the average layer thickness d of the first and / or second metal layers 11, 11' 11 d 11’ and / or the average layer thickness d of the insulating layer 12 12 and / or the average structural height h of the power semiconductor 30 30 .

[0068] Figure 2 The implementation methods shown are the same as Figure 1 The difference in the illustrated embodiment is essentially that the second sub-segment 40b of the cover contact element 40 is formed and / or arranged on and / or above the first sub-segment 40a of the cover contact element 40, and the upper side of the cover contact element 40 is at least partially, and especially entirely, without a castable block. Here, the second sub-segment 40b of the cover contact element 40 may, for example, be electrically connected above or on its upper side to another component, such as a housing (not shown).

[0069] Figure 3 The implementation methods shown are the same as Figure 2 The difference in the illustrated embodiment is that an additional component 60, particularly in the form of a busbar, is shown. Figure 3 As shown, additional components 60, particularly a sub-segment 61 of the busbar, are arranged on the second sub-segment 40b of the cover contact element 40. Here, the additional components 60, particularly the sub-segment 61 of the busbar arranged on the second sub-segment 40b of the cover contact element 40, are connected to the second sub-segment 40b of the cover contact element 40 by a welding compound 71.

[0070] Figure 3 It is also shown that additional components 60, particularly additional sub-segments 62 of the busbar, are connected to the circuit carrier 10, particularly the metal layer 11 of the circuit carrier 10, via additional soldering compound 72.

Claims

1. A power module (100) having a circuit carrier (10), wherein, A first sintered compound layer (20) is applied to the circuit carrier (10), wherein at least one power semiconductor (30) is applied to at least one sub-segment (20a) of the first sintered compound layer (20), wherein at least one sub-segment (21a) of the second sintered compound layer (21) is applied to the at least one power semiconductor (30), wherein a sub-segment (40a) of the cover contact element (40) is applied to at least one sub-segment (21a) of the second sintered compound layer (21).

2. The power module (100) according to claim 1, wherein, The cover contact element (40) is implemented and / or formed in a planar manner, and in particular, the cover contact element (40) is implemented and / or formed as a contact plate.

3. The power module (100) according to claim 1 or 2, wherein, The electrical cover contact element (40) is designed to make electrical contact with two or more power semiconductors (40).

4. The power module (100) according to any one of claims 1 to 3, wherein, The cover contact element (40) has at least one first sub-segment (40a) for electrically connecting to a power semiconductor (30), and in particular, the cover contact element (40) has two or more first sub-segments (40a) for electrically connecting to a corresponding power semiconductor (30), and the cover contact element (40) also has at least one second sub-segment (40b) for electrically connecting to the cover contact element (40).

5. The power module (100) according to claim 4, wherein, Two or more first sub-segments (40a) of the electrical cover contact element (40) are respectively applied to one of two or more sub-segments (21a) of the second sintered compound layer (21), and the sub-segment (21a) is respectively applied to one of two or more power semiconductors (30).

6. The power module (100) according to claim 4 or 5, wherein, At least one second sub-segment (40b) of the cover contact element (40) is formed and / or arranged beside at least one first sub-segment (40a) of the cover contact element (40) and / or on the side of at least one first sub-segment (40a) of the cover contact element (40), and / or wherein at least one second sub-segment (40b) of the cover contact element (40) is electrically connected to the circuit carrier (10), especially on the side, and wherein at least one second sub-segment (40b) of the cover contact element (40) is electrically connected via a sintered compound layer (20), especially via the first sintered compound layer (20).

7. The power module (100) according to claim 4 or 5, in, At least one second sub-segment (40b) of the cover contact element (40) is formed and / or arranged on and / or above at least one first sub-segment (40a) of the cover contact element (40), and / or In this embodiment, at least one second sub-segment (40b) of the electrical cover contact element (40) is electrically connected to another component (60), particularly above, to another component (60), especially to a component different from the circuit carrier (10), particularly electrical contacts, such as busbars or housings. In particular, at least one sub-section (61) of the additional component (60), especially the electrical contact, such as the busbar or housing, is arranged on at least one second sub-section (40b) of the electrical cover contact element (40). In particular, the other components (60), especially the electrical contacts, such as busbars or housings, are arranged on at least one second sub-section (40b) of the cover contact element (40) by means of a welded connection (71) to at least one second sub-section (40b) of the cover contact element (40). In particular, the other components (60), especially electrical contacts, such as additional sub-sections (62) of the busbar or housing, are connected to the circuit carrier (10), especially the metal layer (11) of the circuit carrier (10), by means of additional fusion welding connections (72).

8. The power module (100) according to any one of claims 1 to 7, wherein, The electrical cover contact element (40) is a power contact, a measurement contact, or a signal contact.

9. The power module (100) according to any one of claims 1 to 8, wherein, The cover contact element (40) comprises copper and / or silver and / or steel, or is formed of copper and / or silver and / or steel, especially wherein the cover contact element (40) is formed of coated steel, especially steel coated with copper and / or silver.

10. The power module (100) according to any one of claims 1 to 9, in, The first sintered compound layer (20) and / or the second sintered compound layer (21) have an average layer thickness (d) in the range of 10 μm to 100 μm, preferably in the range of 10 μm to 30 μm. 20 d 21 ), and / or The at least one power semiconductor (30) has an average structural height (h) in the range of 70 μm to 300 μm. 30 ), and / or The electrical cover contact element (40) has an average material thickness (m) in the range of 100 μm to 2000 μm. 40 ), and / or The electrical cover contact element (40) has the following average material thickness (m) 40 The average material thickness (m) 40 This is particularly significant compared to the average layer thickness (d) of the first sintered compound layer (20). 20 The average layer thickness (d) of the second sintered compound layer (21) and / or the average layer thickness (d) 21 ), and / or particularly significantly greater than the average structural height (h) of the at least one power semiconductor (30). 30 ).

11. The power module (100) according to any one of claims 1 to 10, wherein, The circuit carrier (10) has at least one metal layer (11, 11'), wherein the first sintered compound layer (20) is applied to the metal layer (11, 11') of the circuit carrier (10).

12. The power module (100) according to claim 11, in, The circuit carrier (10) also has an insulating layer (12). The insulating layer (12) has at least one first sub-segment (12a) coated with at least a first sub-segment (11a) of the metal layer (11) on at least one side, a second sub-segment (12b) coated with at least a second sub-segment (11b) of the metal layer (11), and at least one sub-segment (12c) without a metal layer. The at least one power semiconductor (30) is applied to a first sub-segment (20a) of the first sintered compound layer (20), and the first sub-segment is applied to a first sub-segment (11a) of the metal layer (11) of the circuit carrier (10), particularly Wherein, at least one second sub-segment (40b) of the electrical cover contact element (40) is applied to a second sub-segment (20b) of the first sintered compound layer (20), and the second sub-segment is applied to a second sub-segment (11b) of the metal layer (11) of the circuit carrier (10), or In this context, on the metal layer (11) of the circuit carrier (11), the other components (60), especially electrical contacts, such as busbars or other sub-sections (62) of the housing, are connected to the circuit carrier, especially the metal layer of the circuit carrier, particularly by means of additional fusion welding.

13. The power module (100) according to any one of claims 1 to 12, wherein, The upper and / or lower sides of the at least one power semiconductor (30) are formed by a noble metal layer (31) and / or coated with the noble metal layer.

14. The power module (100) according to any one of claims 1 to 13, wherein, The at least one power semiconductor (30) is cast using a casting block (50), wherein the casting block (50) is a hard casting, and wherein the casting block (50) is also applied to at least one metal-free sub-segment (12c) of the insulating layer (12).

15. The power module (100) according to any one of claims 1 to 14, wherein, The electrical cover contact element (40) is also cast at least partially using the casting block (50), especially The upper side of the electrical cover contact element (40) is also at least partially, for example, entirely cast using the casting block (50), or The upper side of the electrical cover contact element (40) is at least partially, and especially completely, without a casting block.

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