Three-dimensional hall element, method for producing a three-dimensional hall element, electronic device, chip, and electronic apparatus

Abstract

The present disclosure relates to the technical field of semiconductor integrated circuits, and particularly relates to a three-dimensional Hall element, a preparation method thereof, an electronic device, a chip and an electronic equipment. The three-dimensional Hall element comprises a substrate, a first doped region, a power excitation electrode, a vertical Hall electrode and a planar Hall electrode formed in the first doped region, the power excitation electrode has a trench electrode structure, the power excitation electrode comprises a peripheral power excitation electrode and a middle power excitation electrode, the vertical Hall electrode and the planar Hall electrode are arranged between the peripheral power excitation electrode and the middle power excitation electrode, the vertical Hall electrode is arranged on a straight line extending through the middle power excitation electrode and in a first direction or a second direction and located on both sides of the middle power excitation electrode, and a connecting line of the planar Hall electrode is parallel to and does not coincide with the straight line extending through the middle power excitation electrode and in the first direction or the second direction. Thus, the performance of the three-dimensional Hall sensor and the integration of the chip are improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor integrated circuit technology, specifically to a three-dimensional Hall element and its fabrication method, electronic device, chip, and electronic device. Background Technology

[0002] A three-dimensional Hall sensor is a key device capable of simultaneously detecting magnetic field components in any direction in space. By integrating vertical and horizontal magnetic field sensing functions, it overcomes the limitation of traditional planar Hall devices that can only respond to magnetic fields in a single direction. With the increasingly diversified development of today's technology requiring precise magnetic field sensing, three-dimensional Hall sensors play an important role in fields such as autonomous driving, industrial robots, and high-precision navigation. They can realize core functions such as position detection, current sensing, and attitude control, making them an indispensable environmental sensing element in intelligent systems.

[0003] Traditional three-dimensional Hall sensors achieve omnidirectional measurement of spatial magnetic fields by integrating planar Hall structures and vertical Hall structures. The planar Hall structure, located in a shallow region of the chip surface and formed through shallow ion implantation or epitaxial layers, has its current path confined to the thin surface layer and is used to detect the vertical magnetic field component. The vertical Hall structure requires the current to extend into the substrate at a greater depth. This is achieved through deeper ion implantation, forming a deep well on the substrate surface to create a longitudinal current path, used to detect the magnetic field component parallel to the chip surface. In this system, both the power supply excitation electrode and the Hall electrode are located on the substrate surface. Applying an excitation voltage or current to the surface electrodes causes the current to extend to a deeper region, thus responding to the horizontal magnetic field.

[0004] However, traditional three-dimensional Hall sensor technology has the following limitations:

[0005] First, for vertical Hall structures, the fabrication of deeply doped regions is incompatible with traditional CMOS processes, requiring significant modifications to these processes, increasing complexity and cost. Furthermore, deep-well doping typically employs high-energy ion implantation, but the resulting doped regions are uneven, leading to significant zero-bias in vertical Hall sensors and affecting measurement accuracy. Additionally, the doping concentration in the doped wells is generally much higher than that in the substrate, resulting in a substantial decrease in mobility and consequently reducing the sensitivity of the three-dimensional Hall sensor, failing to meet the requirements for high-precision magnetic field measurements. Moreover, since the power supply excitation electrodes are fabricated on the chip surface, the current is not uniform across different depths of the doped region, further degrading the sensitivity and zero-bias of the three-dimensional Hall sensor and limiting performance improvements.

[0006] Secondly, in traditional three-dimensional Hall sensors, the vertical Hall structure and the planar Hall structure have separate and independently located doped regions. This separation causes discontinuous current flow paths between the two structures and may result in additional resistance losses. This prevents the excitation current from efficiently acting on the magnetic field sensing region within the sensor, leading to insufficient sensitivity and reduced overall sensitivity. Furthermore, the separate doped regions of the vertical and planar Hall structures require separate chip areas. This means that to achieve three-dimensional magnetic field measurement, the sensor needs to have two relatively independent sensing regions on the chip, increasing the overall device size. In modern electronic devices that prioritize miniaturization and high integration, larger device sizes limit applications, especially in space-constrained applications such as smartphones and wearable devices. Moreover, the separate structure makes the sensing of magnetic fields by the vertical and planar Hall structures relatively independent, hindering the full coupling of magnetic field information. In practical applications, spatial magnetic fields are often complex and variable, requiring sensors to comprehensively sense and effectively integrate magnetic field information from multiple directions. The separate structure makes this comprehensive sensing and coupling difficult, limiting the sensor's ability to perceive complex magnetic fields and thus affecting sensitivity. Due to the large size of the devices and the relatively independent structures of vertical Hall and planar Hall sensors, it is more difficult to integrate three-dimensional Hall sensors with other circuits (such as signal processing circuits, control circuits, etc.). Low integration not only increases the complexity and cost of the system, but also introduces more signal interference and transmission loss, affecting the performance of the entire system.

[0007] How to solve the problems of poor process compatibility, large zero bias voltage and low sensitivity of traditional three-dimensional Hall elements, improve the performance of three-dimensional Hall sensors, simplify the manufacturing process and improve chip integration is an urgent problem to be solved. Summary of the Invention

[0008] To address the problems in related technologies, this disclosure provides a three-dimensional Hall element, its fabrication method, electronic device, chip, and electronic device.

[0009] In a first aspect, this disclosure provides a three-dimensional Hall element, comprising: a substrate; a first doped region, in which a power excitation electrode, a vertical Hall electrode, and a planar Hall electrode are formed, the power excitation electrode being used to apply an excitation current or an excitation voltage to the three-dimensional Hall element, the power excitation electrode including a peripheral power excitation electrode and a middle power excitation electrode; the vertical Hall electrode being used to detect a Hall voltage generated by a magnetic field direction parallel to the substrate surface, the magnetic field direction parallel to the substrate surface including a first direction and a second direction perpendicular to each other, the vertical Hall electrode including a vertical Hall positive electrode and a vertical Hall negative electrode; the planar Hall electrode being used to detect a Hall voltage generated by a magnetic field direction perpendicular to the substrate surface, the planar Hall electrode including a planar Hall positive electrode and a planar Hall negative electrode; the vertical Hall electrode and the planar Hall electrode being disposed between the peripheral power excitation electrode and the middle power excitation electrode, wherein:

[0010] The power excitation electrode has a trench electrode structure, the peripheral power excitation electrode is located outside the first doped region, and the intermediate power excitation electrode is located in the middle of the first doped region;

[0011] The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode.

[0012] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line that passes through the intermediate power supply excitation electrode and extends along the first direction or the second direction.

[0013] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0014] The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0015] The planar Hall positive electrode and the planar Hall negative electrode are symmetrically arranged with respect to a straight line extending along the first direction or the second direction, passing through the intermediate power supply excitation electrode.

[0016] According to embodiments of this disclosure, the first doped region is disposed in or on the substrate.

[0017] According to an embodiment of the present disclosure, the planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region.

[0018] According to an embodiment of this disclosure, the peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode.

[0019] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is rectangular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode.

[0020] The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power supply excitation electrode, including:

[0021] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power supply excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

[0022] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and a second planar Hall electrode;

[0023] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0024] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at two adjacent corners of the designated rectangle, and the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle.

[0025] According to an embodiment of this disclosure, the rectangle is a square.

[0026] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is annular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0027] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power supply excitation electrode, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

[0028] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and / or a second planar Hall electrode;

[0029] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0030] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

[0031] The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the bisecting points of the arcs of the other two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

[0032] According to embodiments of this disclosure, the three-dimensional Hall element further includes a second doped region stacked with the first doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions onto the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in that third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material.

[0033] The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure.

[0034] The power supply excitation electrode extends through the first doped region and the second doped region.

[0035] According to an embodiment of this disclosure, there are four peripheral power excitation electrodes, each of which is symmetrically disposed at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode is disposed at the center of the first doped region.

[0036] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0037] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the first direction, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the second direction.

[0038] The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0039] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode;

[0040] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0041] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the second vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the second vertical Hall electrode.

[0042] According to embodiments of this disclosure, the second doped region is disposed in or on the substrate, and the first doped region is disposed above the second doped region and the trench filled with insulating material.

[0043] According to embodiments of this disclosure, the trench electrode structure is formed in the following manner:

[0044] The sidewalls of the trench extending into the first doped region are doped and the trench is filled with metal. The doping type of the sidewalls of the trench is the same as that of the first doped region, and the doping concentration of the sidewalls of the trench is greater than that of the first doped region.

[0045] Secondly, this disclosure provides a method for fabricating a three-dimensional Hall element, the method comprising:

[0046] A substrate is provided, and a first doped region is formed on or in the substrate;

[0047] A power excitation electrode is formed in the first doped region, and the power excitation electrode has a trench electrode structure.

[0048] A vertical Hall electrode is formed in the first doped region;

[0049] A planar Hall electrode is formed in the first doped region;

[0050] The power excitation electrode is used to apply excitation current or excitation voltage to the three-dimensional Hall element. The power excitation electrode includes an outer power excitation electrode and an intermediate power excitation electrode. The formation of the power excitation electrode in the first doped region includes: forming the intermediate power excitation electrode in the middle of the first doped region and forming the outer power excitation electrode around the first doped region.

[0051] The vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface. The magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other. The vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode. The planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface. The planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode. The vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the intermediate power excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode. The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction.

[0052] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0053] The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0054] The planar Hall positive electrode and the planar Hall negative electrode are symmetrically arranged with respect to a straight line extending along the first direction or the second direction, passing through the intermediate power supply excitation electrode.

[0055] According to an embodiment of the present disclosure, the planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region.

[0056] According to an embodiment of this disclosure, the peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode.

[0057] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is rectangular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode.

[0058] The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power supply excitation electrode, including:

[0059] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power supply excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

[0060] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and a second planar Hall electrode;

[0061] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0062] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at two adjacent corners of the designated rectangle, and the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle.

[0063] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is annular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0064] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power supply excitation electrode, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

[0065] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and / or a second planar Hall electrode;

[0066] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0067] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

[0068] The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the bisecting points of the arcs of the other two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

[0069] According to embodiments of this disclosure, the three-dimensional Hall element further includes a second doped region stacked with the first doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions onto the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in that third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material.

[0070] The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure.

[0071] The power supply excitation electrode extends through the first doped region and the second doped region.

[0072] According to an embodiment of this disclosure, there are four peripheral power excitation electrodes, each of which is symmetrically disposed at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode is disposed at the center of the first doped region.

[0073] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0074] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the first direction, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the second direction.

[0075] The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0076] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode;

[0077] The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0078] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the second vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the second vertical Hall electrode.

[0079] According to embodiments of this disclosure, the second doped region is disposed in or on the substrate, and the first doped region is disposed above the second doped region and the trench filled with insulating material.

[0080] Thirdly, this disclosure provides an electronic device comprising a three-dimensional Hall element as described in any one of the first aspects, or a three-dimensional Hall element prepared according to the preparation method described in any one of the second aspects.

[0081] Fourthly, this disclosure provides a chip that includes the electronic device described in the third aspect.

[0082] Fifthly, this disclosure provides an electronic device including the chip described in the fourth aspect.

[0083] According to the technical solution provided in this disclosure, the three-dimensional Hall element includes: a substrate; a first doped region, and a power excitation electrode, a vertical Hall electrode, and a planar Hall electrode formed in the first doped region. The power excitation electrode is used to apply an excitation current or an excitation voltage to the three-dimensional Hall element, and the power excitation electrode includes a peripheral power excitation electrode and a middle power excitation electrode. The vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface, the magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other, and the vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode. The planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface, and the planar Hall electrode includes a planar Hall positive electrode and a vertical Hall negative electrode. The system comprises a vertical Hall electrode and a planar Hall electrode; the vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the intermediate power excitation electrode, wherein: the power excitation electrode has a trench electrode structure, the peripheral power excitation electrode is located outside the first doped region; the intermediate power excitation electrode is located in the middle of the first doped region; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode; the line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction.

[0084] This disclosure utilizes a trench electrode structure to form the power excitation electrode, abandoning the traditional method of using a "deep doped trap" to form a deep current path and separate the doped region. Instead, the "trench electrode" serves as the structure for current guidance and magnetic field sensing. This allows the depth and path of the current to be directly controlled by the physical depth and shape of the trench, rather than indirectly controlled by the energy and dose of ion implantation. Therefore, high-energy ion implantation is unnecessary, ensuring perfect compatibility with CMOS processes, simplifying the fabrication process, ensuring uniform current diffusion in the depth direction, significantly reducing zero bias, and thus improving the performance of the three-dimensional Hall sensor. Furthermore, by placing the vertical Hall electrode on a straight line passing through the intermediate power excitation electrode and extending along the first or second direction, and located on both sides of the intermediate power excitation electrode, orthogonality and accuracy of the response to the horizontal magnetic field direction are ensured. Furthermore, the connection line of the planar Hall electrode is parallel to and does not coincide with the straight line that passes through the intermediate power excitation electrode and extends along the first or second direction. This layout minimizes electrical crosstalk and magnetic coupling interference between the two detection modes, ensuring efficient extraction of the most effective Hall voltage signal. Finally, by forming the power excitation electrode on a single doped region or two stacked doped regions, the power excitation electrode can simultaneously provide excitation for the functional areas that realize the measurement of vertical Hall voltage and planar Hall voltage, reducing the number of electrodes, saving chip area, and achieving omnidirectional measurement of the spatial magnetic field at the same location simultaneously through different electrode designs and current paths. This breaks the traditional pattern of separating the two layouts, greatly improves chip space utilization, realizes device miniaturization, and improves chip integration.

[0085] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0086] Other features, objects, and advantages of this disclosure will become more apparent from the following detailed description of non-limiting embodiments, taken in conjunction with the accompanying drawings. In the drawings:

[0087] Figure 1 This diagram shows a top-view structural schematic of a three-dimensional Hall element according to an embodiment of the present disclosure;

[0088] Figure 2 A top-view structural schematic diagram of another three-dimensional Hall element according to an embodiment of the present disclosure is shown;

[0089] Figure 3 A top-view structural schematic diagram of another three-dimensional Hall element according to an embodiment of the present disclosure is shown;

[0090] Figure 4 This diagram illustrates a three-dimensional Hall element from a top view according to an embodiment of the present disclosure.

[0091] Figure 5 A top-view structural schematic diagram of yet another three-dimensional Hall element according to an embodiment of the present disclosure is shown;

[0092] Figure 6 A top-view schematic diagram of yet another three-dimensional Hall element according to an embodiment of the present disclosure is shown;

[0093] Figure 7 This diagram illustrates the structure of the first and second doped regions in a stacked three-dimensional Hall element according to an embodiment of the present disclosure.

[0094] Figure 8 A planar schematic diagram of a second doped region in a stacked three-dimensional Hall element according to an embodiment of the present disclosure is shown;

[0095] Figure 9 This diagram illustrates a structure of a stacked three-dimensional Hall element according to an embodiment of the present disclosure.

[0096] Figure 10 A flowchart illustrating a method for fabricating a three-dimensional Hall element according to an embodiment of the present disclosure is shown. Detailed Implementation

[0097] In the following, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings to enable those skilled in the art to readily implement them. Furthermore, for clarity, portions unrelated to the description of exemplary embodiments have been omitted from the drawings.

[0098] In this disclosure, it should be understood that terms such as “comprising” or “having” are intended to indicate the presence of features, figures, steps, behaviors, components, parts or combinations thereof disclosed in this specification, and are not intended to exclude the possibility of the presence or addition of one or more other features, figures, steps, behaviors, components, parts or combinations thereof.

[0099] It should also be noted that, unless otherwise specified, the embodiments and features described in this disclosure can be combined with each other. This disclosure will now be described in detail with reference to the accompanying drawings and embodiments.

[0100] As mentioned above, traditional three-dimensional Hall sensor technology has many limitations, such as the separation and independent position of the doped regions of the vertical Hall structure and the planar Hall structure in traditional three-dimensional Hall sensors, and the incompatibility between the fabrication of the deep doped region in the vertical Hall structure and traditional CMOS processes. These limitations directly lead to problems such as complex fabrication processes, low sensitivity, large zero bias voltage, and low chip integration in traditional three-dimensional Hall sensors.

[0101] To improve the performance of three-dimensional Hall sensors, simplify the fabrication process, and increase chip integration, the inventors of this disclosure, after repeated demonstrations and careful consideration, proposed a three-dimensional Hall element. By forming a power excitation electrode on a single doped region or two stacked doped regions using a trench electrode structure, the power excitation electrode can simultaneously provide excitation for the functional regions that realize the measurement of vertical Hall and planar Hall. Furthermore, by rationally arranging the positions of the planar Hall electrode and the vertical Hall electrode, the performance of the three-dimensional Hall sensor is improved, the fabrication process is simplified, and the chip integration is increased.

[0102] Specifically, the three-dimensional Hall element includes: a substrate; a first doped region, and a power supply excitation electrode, a vertical Hall electrode, and a planar Hall electrode formed in the first doped region.

[0103] The substrate, as the basic support structure of the entire three-dimensional Hall element, is usually made of semiconductor materials with good crystal structure and electrical properties, such as silicon (Si).

[0104] The first doped region is disposed in or on the substrate and is lightly doped. When the first doped region is formed in the substrate, it is part of the substrate itself and is achieved by changing the electrical properties of a specific area of ​​the substrate (e.g., ion implantation). When the first doped region is formed on the substrate, it is a newly grown semiconductor layer on the substrate surface and can be achieved through epitaxial growth. Furthermore, within the first doped region, a functional region is established to simultaneously measure both vertical Hall voltage and planar Hall voltage; that is, a vertical Hall functional region and a planar Hall functional region. Specifically, based on the Hall effect, the planar Hall functional region is used to detect magnetic fields perpendicular to the substrate surface, i.e., a vertical magnetic field. It functions like a traditional Hall plate, sensitive to magnetic fields "passing through" the chip. Its functional region is mainly concentrated along the path of current flow near the substrate surface. When the current is subjected to a vertical magnetic field, a lateral Hall voltage is generated, which is detected by electrodes on the same surface. At this time, the doped region through which the current flows is characterized as the "planar Hall functional region." The vertical Hall functional region is used to detect magnetic field directions parallel to the substrate surface (first and second directions), i.e., parallel magnetic fields. When current is guided by trench electrodes to flow deeper into the substrate, and this current is acted upon by a parallel magnetic field perpendicular to the current, a Hall voltage is also generated. This voltage is detected by electrodes placed at specific locations. In this case, the same doped region exhibits a vertical Hall functional region due to the change in magnetic field direction and detection method, and is sensitive to magnetic fields parallel to the chip surface. Therefore, the planar Hall functional region and the vertical Hall functional region are functional concepts, rather than two completely separate parts in terms of physical structure.

[0105] This disclosure uses a single doped region as the carrier for both the planar Hall functional region and the vertical Hall functional region. This is the material basis for achieving "co-located integration." This integration method avoids the complex structure of using multiple independent components for combined detection, simplifies the fabrication process, and reduces costs. Simultaneously, it achieves three-dimensional detection at the same location, making the components more compact in spatial layout, improving the chip's integration density, and facilitating miniaturized and high-density sensor applications.

[0106] For the power excitation electrode, which is used to apply excitation current or excitation voltage to the three-dimensional Hall element, it has a trench electrode structure. The trench electrode structure itself is vertical, occupies a small surface area, but can effectively control the depth current, which is a very efficient space utilization method. In the fabrication process, trenches can be formed in the doped region by dry etching, and then a layer of heavily doped polycrystalline silicon is deposited on the trench sidewall as an ohmic contact layer. Finally, the remaining space of the trench is filled with metal (such as tungsten W). Alternatively, the sidewalls of the trench extending into the doped region can be doped, and then the trench is filled with metal. In this case, the doping type of the trench sidewall is the same as that of the doped region, and the doping concentration of the trench sidewall is greater than that of the doped region. The sidewalls of the trench electrode structure are perpendicular to the substrate surface or at a predetermined angle to the substrate surface. In the former fabrication method, when the current flows from the metal to the silicon substrate, it must pass through the polycrystalline silicon layer. Although the polycrystalline silicon is heavily doped, its resistivity is still at least an order of magnitude higher than that of the metal. This polycrystalline silicon layer becomes a significant resistance bottleneck. In the latter fabrication method, the trenches are directly filled with metal, completely avoiding the presence of a high-resistivity polysilicon layer. The highly doped sidewalls are used solely to form ohmic contacts, and their thickness is very thin, contributing minimally to the total resistance. Therefore, compared to the former method, the latter significantly reduces the series resistance of the electrodes, allowing more energy to be used to generate the sensing current, indirectly improving the signal-to-noise ratio and sensitivity of the device. Furthermore, modifying the sidewalls is simpler in terms of fabrication process than uniformly depositing polysilicon on the trench sidewalls and bottom, thus simplifying the process flow.

[0107] In addition, the power supply excitation electrode includes an outer power supply excitation electrode surrounding the first doped region and an intermediate power supply excitation electrode located in the middle of the first doped region. During operation, a voltage is generally applied between the intermediate power supply excitation electrode and the outer power supply excitation electrode. The direction of the applied voltage can allow current to flow from the intermediate power supply excitation electrode to the outer power supply excitation electrode, or vice versa.

[0108] In this disclosure, the trench electrode structure design increases the contact area between the electrode and the doped region, reduces contact resistance, and improves the efficiency of applying excitation current or excitation voltage, thereby enhancing the output signal strength of the device. Furthermore, the trench electrode provides an ideal current channel with a fixed cross-sectional area, ensuring uniform current distribution as it extends from the surface into the doped region, significantly reducing the zero-bias voltage. Simultaneously, the current is injected into the lightly doped region through the trench electrode, fully utilizing the high mobility of the doped region to achieve high sensitivity. In addition, the arrangement of the peripheral and intermediate power supply excitation electrodes generates a uniform excitation magnetic field, providing stable excitation conditions for the planar Hall functional region and the vertical Hall functional region, which is beneficial for improving the detection accuracy and stability of the device.

[0109] For vertical Hall electrodes and planar Hall electrodes, the vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the intermediate power excitation electrode. The vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface, which includes a first direction and a second direction perpendicular to each other. The vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode. That is, the position of the vertical Hall electrode pair has two possible configurations, depending on the direction of the parallel magnetic field to be detected (the first direction or the second direction).

[0110] In practical implementation, a three-dimensional Hall element can integrate two pairs of vertical Hall detection electrodes simultaneously. By switching the excitation and detection modes via external circuitry, it can achieve time-division or simultaneous measurement of parallel magnetic fields in two directions. Furthermore, to cancel any common-mode signals and ensure that the measured voltage is purely a differential voltage generated by the Hall effect, each pair of vertical Hall detection electrodes needs to be symmetrically arranged about the intermediate power supply excitation electrode. Additionally, the arrangement axis of each pair of vertical Hall detection electrodes is perpendicular to the direction of the sensitive magnetic field and also perpendicular to the direction of the current guided in that detection mode.

[0111] In one specific example, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power supply excitation electrode, including:

[0112] The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0113] Taking the XYZ coordinate system as an example, assuming the chip surface is located in the XY plane, the direction perpendicular to the chip surface is the Z-axis direction, if we define the X-axis direction as the first direction, the Y-axis direction as the second direction, and the Z-axis direction as the third direction, and the intermediate power supply excitation electrode is located at the origin of the coordinate system, that is, the intersection of the XYZ axes, then the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are respectively set on the X-axis or the Y-axis, and located on both sides of the origin of the coordinate system.

[0114] When it is necessary to detect a parallel magnetic field along the X-axis, the Y-axis is chosen as the axis for arranging the vertical Hall electrode pair. For example, the vertical Hall positive electrode is placed at a point on the positive half of the Y-axis, such as coordinates (0, +d, 0), where d is a positive value representing the distance from the electrode to the origin; the vertical Hall negative electrode is placed at a point on the negative half of the Y-axis, symmetrical to the positive electrode, such as coordinates (0, -d, 0). When current is guided to flow along the Y-axis deep within the doped region, a magnetic field along the X-axis will deflect charge carriers according to the Lorentz force, thereby generating a potential difference in the Z-direction. However, since the vertical Hall electrodes are placed on the surface, this potential difference will manifest between these two points in the Y-axis direction and be detected by this pair of vertical Hall electrodes on the Y-axis.

[0115] When it is necessary to detect a parallel magnetic field along the Y-axis, the X-axis is chosen as the axis for arranging the vertical Hall electrode pair. For example, the vertical Hall positive electrode is placed at a point on the positive half of the X-axis, such as coordinates (+d, 0, 0); the vertical Hall negative electrode is placed at a point on the negative half of the X-axis, symmetrical to the positive electrode, such as coordinates (-d, 0, 0). When current is guided to flow deep within the doped region along the X-axis, a magnetic field along the Y-axis deflects charge carriers according to the Lorentz force, thereby generating a potential difference in the Z-direction. This potential difference ultimately forms a voltage between the two points in the X-axis direction, which is detected by the pair of vertical Hall electrodes on the X-axis.

[0116] The planar Hall electrode is used to detect the Hall voltage generated by a magnetic field perpendicular to the substrate surface. The planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode. The line connecting the planar Hall positive and negative electrodes is parallel to but does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along either the first or second direction. In other words, taking the XYZ coordinate system as an example, the line connecting the planar Hall positive and negative electrodes needs to be parallel to the X-axis or Y-axis, and this line does not pass through the origin (intermediate power supply excitation electrode). This means that the pair of electrodes needs to be offset to one side of the origin.

[0117] In practical implementation, a three-dimensional Hall element can integrate one or more pairs of planar Hall detection electrodes according to actual needs. When multiple pairs of planar Hall detection electrodes are set, each pair of electrodes is arranged in different positions and directions, and switched by a switch to achieve higher accuracy or compensate for process errors. Similarly, the arrangement axis of each pair of planar Hall detection electrodes (including a planar Hall positive electrode and a planar Hall negative electrode) is perpendicular to the direction of the sensitive magnetic field, and also perpendicular to the direction of the current guided in this detection mode.

[0118] In one specific embodiment, the planar Hall positive electrode and planar Hall negative electrode are symmetrically arranged with respect to a straight line extending along the first or second direction, passing through the intermediate power supply excitation electrode. Taking the XYZ coordinate system as an example, when the line connecting the planar Hall electrode pair is parallel to the X-axis, that is, the line is a straight line parallel to the X-axis, then the pair of planar Hall electrodes have the same Y-coordinate. For example, the planar Hall positive electrode can be set at the position of (+d,+c,0), and the planar Hall negative electrode can be set at the position of (-d,+c,0). In this way, the midpoint of their connecting line is located at (0,+c,0), and the entire connecting line lies on the straight line y=+c, which is parallel to the X-axis and does not pass through the origin, where c represents the distance from the midpoint of the connecting line between the planar Hall positive electrode and the planar Hall negative electrode to the origin. When current flows near the surface of the substrate along the Y-axis, a perpendicular magnetic field will deflect charge carriers according to the Lorentz force, thereby generating a potential difference in the X-axis direction. The pair of electrodes parallel to the X-axis can then detect the Hall voltage in this direction.

[0119] When the line connecting a pair of planar Hall electrodes is parallel to the Y-axis (i.e., the line is a straight line parallel to the Y-axis), the pair of planar Hall electrodes have the same X-coordinate. For example, the positive planar Hall electrode can be positioned at coordinates (+c, +d, 0), and the negative planar Hall electrode can be positioned at coordinates (+c, -d, 0). Thus, the midpoint of their connecting line lies at (+c, 0, 0), and the entire line lies on the straight line x = +c, which is parallel to the Y-axis and does not pass through the origin. When current flows near the surface of the substrate along the X-axis, a perpendicular magnetic field deflects charge carriers according to the Lorentz force, thereby generating a potential difference in the Y-axis direction. This pair of electrodes parallel to the Y-axis can detect the Hall voltage in this direction.

[0120] In this disclosure, the number and position of planar Hall electrodes and vertical Hall electrodes vary depending on the number and shape of the doped regions, as well as the shape of the power supply excitation electrode. The structural composition of the three-dimensional Hall element is described in detail below using three specific embodiments.

[0121] When the three-dimensional Hall element comprises only a first doped region, that is, both the planar Hall functional region and the vertical Hall functional region are simultaneously realized within the first doped region. This means that in this case, there are no two independent semiconductor regions manufactured using different processes (e.g., a lightly doped region for the planar Hall functional region and a deeply doped region for the vertical Hall functional region), but rather only one semiconductor region with uniform doping characteristics formed through a single doping process. Therefore, the realization of the function in this case does not depend on manufacturing different material regions, but rather on how to excite and measure the current on this same doped region. This greatly saves chip area, simplifies the manufacturing process, avoids performance inconsistencies caused by process mismatch, and eliminates measurement errors caused by the physical separation of the two functional regions.

[0122] According to embodiments of this disclosure, the planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region. That is, the planar Hall electrode has the same trench electrode structure as the power supply excitation electrode. The reason for using a trench electrode structure to form the planar Hall electrode is to integrate the functions of measuring planar Hall voltage and vertical Hall voltage simultaneously in the same doped region (first doped region). In this case, the planar Hall functional region and the vertical Hall functional region are formed in the same doped region. Since the depth of this doped region is relatively deep, to realize the function of the planar Hall functional region, the planar Hall electrode needs to be inserted deep into the doped region; however, the doped region of a traditional planar Hall functional region is very thin, so the planar Hall electrode can be fabricated on the surface. For the vertical Hall electrode, it can be formed on the surface of the first doped region based on a preset electrode fabrication method. For example, polysilicon can be deposited on the surface of the first doped region, and then metal can be deposited on the deposited polysilicon surface. The polysilicon deposited on the surface of the first doped region is heavily doped.

[0123] In one specific embodiment, the peripheral power excitation electrode has a closed-loop symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode. The projection of the closed-loop symmetrical trench electrode structure onto the substrate surface can be rectangular, such as a square or rectangle, or it can be an annular or other closed-loop symmetrical structures.

[0124] Figure 1 A schematic diagram of the structure of a three-dimensional Hall element according to an embodiment of the present disclosure is shown. Figure 1 As shown, the three-dimensional Hall element includes: a substrate 100; a first doped region 110; a power excitation electrode, a vertical Hall electrode, and a planar Hall electrode formed in the first doped region 110; the power excitation electrode is used to apply an excitation current or an excitation voltage to the three-dimensional Hall element, the power excitation electrode has a trench electrode structure, the power excitation electrode includes a peripheral power excitation electrode 121 and a middle power excitation electrode 122, the peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the projection of the closed symmetrical trench electrode structure on the substrate surface is rectangular (…). Figure 1(Using a square as an example for illustration); the peripheral power excitation electrode 121 is located around the first doped region 110; the intermediate power excitation electrode 122 is located at the center of the peripheral power excitation electrode 121; the vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface, the magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other, and the vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode; the planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface, and the planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode; the vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode 121 and the intermediate power excitation electrode 122, wherein:

[0125] The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode 131 and the vertical Hall negative electrode 132 of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power excitation electrode 122; the vertical Hall positive electrode 133 and the vertical Hall negative electrode 134 of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

[0126] The planar Hall electrode may consist only of a first planar Hall electrode; the planar Hall positive electrode 141 and the planar Hall negative electrode 142 of the first planar Hall electrode are respectively disposed at two adjacent corners of the upper left and upper right of the designated rectangle, as shown below. Figure 1 The two adjacent corners shown are symmetrically arranged with respect to the vertical Hall positive electrode 133 of the second vertical Hall electrode, or symmetrically arranged with respect to the vertical Hall negative electrode 134 of the second vertical Hall electrode, located at the two adjacent corners of the lower left and lower right of the designated rectangle. Alternatively, they can be arranged as follows: Figure 2 The two adjacent corners shown are symmetrically arranged with respect to the vertical Hall positive electrode 131 of the first vertical Hall electrode, and are located at the two adjacent corners of the upper left and lower left of the designated rectangle, or symmetrically arranged with respect to the vertical Hall negative electrode 132 of the first vertical Hall electrode, and are located at the two adjacent corners of the upper right and lower right of the designated rectangle.

[0127] like Figure 3 As shown, the planar Hall electrode may further include a first planar Hall electrode and a second planar Hall electrode; Figure 1Taking the arrangement of the first planar Hall electrodes as an example, the planar Hall positive electrode 141 and the planar Hall negative electrode 142 of the first planar Hall electrode are respectively disposed at the two adjacent corners of the upper left and upper right of the designated rectangle, and are symmetrically arranged with the vertical Hall positive electrode 133 of the second vertical Hall electrode as the center; the planar Hall positive electrode 143 and the planar Hall negative electrode 144 of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle, and are symmetrically arranged with the vertical Hall negative electrode 134 of the second vertical Hall electrode as the center.

[0128] Figure 4 A schematic diagram of another three-dimensional Hall element according to an embodiment of the present disclosure is shown. Figure 4 As shown, the three-dimensional Hall element includes: a substrate 100; a first doped region 110; a power excitation electrode, a vertical Hall electrode, and a planar Hall electrode formed in the first doped region 110; the power excitation electrode is used to apply an excitation current or an excitation voltage to the three-dimensional Hall element, the power excitation electrode has a trench electrode structure, the power excitation electrode includes a peripheral power excitation electrode 121 and a middle power excitation electrode 122, the peripheral power excitation electrode has a closed symmetrical trench electrode structure, the projection of the closed symmetrical trench electrode structure on the substrate surface is annular; the peripheral power excitation electrode 121 is located around the first doped region 110; the middle power excitation electrode 122... The excitation electrode 122 is disk-shaped and located at the center of the peripheral power excitation electrode 121; the vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface, the magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other, and the vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode; the planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface, and the planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode; the vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode 121 and the intermediate power excitation electrode 122, wherein:

[0129] The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode 131 and the vertical Hall negative electrode 132 of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power excitation electrode 122, and the vertical Hall positive electrode 133 and the vertical Hall negative electrode 134 of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

[0130] The planar Hall electrode may consist of only a first planar Hall electrode; the planar Hall positive electrode 141 and the planar Hall negative electrode 142 of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction, and may be as follows: Figure 4 The location of the bisector of the arcs in the first and second quadrants shown can also be as follows: Figure 5 The location can be the bisecting point of the arcs in the second and third quadrants, or the bisecting point of the arcs in the third and fourth quadrants, or the bisecting point of the arcs in the fourth and first quadrants.

[0131] like Figure 6 As shown, the planar Hall electrode may further include a first planar Hall electrode and a second planar Hall electrode; Figure 4 Taking the arrangement of the first planar Hall electrodes as an example, the planar Hall positive electrode 141 and the planar Hall negative electrode 142 of the first planar Hall electrode are respectively located at the bisecting points of the arcs of the first and second quadrants obtained by dividing the specified circle by the first direction and the second direction; the planar Hall positive electrode 143 and the planar Hall negative electrode 144 of the second planar Hall electrode are respectively located at the bisecting points of the arcs of the third and fourth quadrants obtained by dividing the specified circle by the first direction and the second direction.

[0132] In the three-dimensional Hall element structure described above, when two planar Hall electrodes (i.e., a first planar Hall electrode and a second planar Hall electrode) are included, compared to including only one planar Hall electrode, combined with its specific symmetrical arrangement (e.g., Figure 3 and Figure 6 As shown), it has the following beneficial technical effects:

[0133] 1. Improve the detection accuracy and signal-to-noise ratio of planar Hall voltage. Two planar Hall electrodes can simultaneously detect the Hall voltage generated by the same vertical magnetic field, but with opposite output polarities (one positive and the other negative). By processing the outputs of the two electrodes through a differential amplifier circuit, common-mode noise (such as offset voltage caused by temperature drift and process deviation) can be effectively suppressed, significantly improving the signal-to-noise ratio (SNR) and measurement accuracy.

[0134] 2. Enhanced robustness to process deviations and stress inhomogeneity. Since the two planar Hall electrodes are perfectly symmetrical, any symmetry errors caused by manufacturing processes (such as inhomogeneous doping or etching deviations) or mechanical stress will be partially canceled out in the differential output. This reduces the device's sensitivity to process fluctuations and improves yield and consistency.

[0135] 3. Achieve temperature drift compensation. The planar Hall effect is greatly affected by temperature (e.g., carrier mobility changes with temperature). Two symmetrical planar Hall electrodes have similar temperature characteristics, and the temperature-induced drift voltage in the differential output will be canceled out, thereby reducing the influence of temperature on the measurement results.

[0136] Therefore, using two symmetrical planar Hall electrodes significantly improves the overall performance of the three-dimensional Hall element, making it particularly suitable for high-precision, high-stability three-dimensional magnetic field sensing applications (such as electronic compasses, current detection, position sensing, etc.).

[0137] According to embodiments of this disclosure, the three-dimensional Hall element includes not only a first doped region but also a second doped region stacked with the first doped region. The second doped region may be disposed in or on the substrate.

[0138] Specifically, both the first doped region and the second doped region have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first doped region and the second doped region onto the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in that third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material. The first doped region is disposed above the second doped region and the trenches filled with insulating material. The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure. The power supply excitation electrode penetrates through the first doped region and the second doped region.

[0139] The structural features of the stacked three-dimensional Hall element disclosed herein can be summarized as "vertical stacking, functional separation, electrical isolation, and shared excitation." First, unlike the prior art where functional regions measuring planar Hall voltage and vertical Hall voltage are arranged side-by-side on a plane, in this disclosure, the two doped regions are no longer side-by-side on a plane, but are stacked in a direction perpendicular to the substrate (third direction) to form a three-dimensional integrated structure. The first doped region is located on the upper layer, and the second doped region is located on the lower layer. Furthermore, their projections on the plane are both cross-shaped and overlap each other, but they have different depths (the first doped region is shallow, the second doped region is deep) and different widths (the first doped region has a wider arm). Second, based on the characteristics of the first doped region being located on the upper layer, shallow, and wide, it is mainly optimized for sensing vertical magnetic fields. The shallower depth makes it more sensitive to surface current effects, while the wider extension arm provides a better layout position for the planar Hall electrode measuring the vertical magnetic field. Based on the characteristics of the second doped region being located on the lower layer, deep, narrow, and isolated, it is mainly optimized for sensing horizontal magnetic fields. The deeper depth and trench isolation... The structure constrains the current to flow fully in the horizontal direction, providing a long, controlled current path for the vertical Hall effect, thus achieving high sensitivity and realizing functional zoning optimization. In addition, the second doped region is surrounded by deep trenches filled with insulating material (such as silicon dioxide), which constitutes a "basin"-shaped isolation structure (similar to deep trench isolation). This isolation trench cuts off the electrical connection between the second doped region and other areas of the substrate, effectively eliminating leakage current paths and parasitic capacitance effects from the substrate. This makes the current field in the lower region very pure and stable, greatly improving the accuracy and linearity of vertical Hall measurement. Finally, the same power supply excitation electrode runs through both doped regions from top to bottom, so that only one excitation current or voltage needs to be applied to simultaneously establish the working electric field in the upper and lower doped regions. This ensures that the operating points of the two regions are completely synchronized, simplifies the driving circuit, and avoids the matching problems and additional power consumption caused by using two independent excitation sources.

[0140] Figure 7 A schematic diagram of the structure of the first doped region and the second doped region in a stacked three-dimensional Hall element according to an embodiment of the present disclosure is shown. Figure 7 As shown, the yellow portion represents the first doped region, and the orange portion represents the second doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions onto the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in that third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material.

[0141] Figure 8 A planar schematic diagram of the second doped region in a stacked three-dimensional Hall element according to an embodiment of the present disclosure is shown, as follows: Figure 8 As shown, a trench 150 filled with insulating material is disposed around the second doped region, and a substrate 100 is disposed outside the trench. The first doped region is formed by depositing a cross-shaped semiconductor film layer on the second doped region in a predetermined epitaxial manner. The depth of the second doped region is greater than the depth of the first doped region, and the width of the extension arm of the first doped region is greater than the width of the extension arm of the second doped region.

[0142] based on Figure 7 The stacked structure of the first and second doped regions shown is illustrated. Figure 9 This diagram illustrates the structure of a stacked three-dimensional Hall element according to an embodiment of the present disclosure. Figure 9 (The annotations for the substrate and isolation trench are omitted). The core feature of this three-dimensional Hall element is that it integrates the functional areas for measuring planar Hall voltage and vertical Hall voltage in three-dimensional space through stacking (adjacent to each other from top to bottom) and a special geometry (cross shape), and shares the power supply excitation electrode.

[0143] like Figure 9 As shown, the planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region based on a preset electrode fabrication method; or, the planar Hall electrode is formed on the surface of the first doped region based on a preset electrode fabrication method, and the vertical Hall electrode has the trench electrode structure. The power supply excitation electrode penetrates the first doped region and the second doped region sequentially from top to bottom.

[0144] There are four peripheral power excitation electrodes 121, each of which is symmetrically arranged at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode 122 is arranged at the center of the first doped region.

[0145] The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode 131 and the vertical Hall negative electrode 132 of the first vertical Hall electrode are symmetrically arranged on the center lines of two extension arms of the first doped region along the first direction. The vertical Hall positive electrode 133 and the vertical Hall negative electrode 134 of the second vertical Hall electrode are symmetrically arranged on the center lines of two extension arms of the first doped region along the second direction. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0146] The planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode. The planar Hall positive electrode 141 and the planar Hall negative electrode 142 of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode 131 of the first vertical Hall electrode. The planar Hall positive electrode 143 and the planar Hall negative electrode 144 of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode 132 of the first vertical Hall electrode. The planar Hall positive electrode 145 and the planar Hall negative electrode 146 of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode 133 of the second vertical Hall electrode. The planar Hall positive electrode 147 and the planar Hall negative electrode 148 of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode 134 of the second vertical Hall electrode.

[0147] The stacked three-dimensional Hall sensor in this embodiment, on the one hand, by stacking the functional areas for measuring vertical Hall voltage and planar Hall voltage in the same location, can measure the complete magnetic field vector at a physical point in space. This is crucial for applications that require accurate measurement of magnetic field gradients and curl, avoiding errors caused by different measurement points, achieving true "point" measurement, and greatly saving chip area and reducing costs. This allows high-performance three-dimensional Hall sensors to be integrated into portable devices (such as smartphones and smartwatches) and micro-sensor nodes with extremely demanding space requirements. On the other hand, through physical isolation and functional optimization, crosstalk is reduced at the source, and through co-location integration, the effects of temperature and stress gradients are eliminated, giving the element inherent stability and reducing dependence on external compensation algorithms, thereby significantly improving measurement accuracy and reliability.

[0148] Figure 10 A flowchart illustrating a method for fabricating a three-dimensional Hall element according to an embodiment of the present disclosure is shown. Figure 10 As shown, the preparation method includes the following steps S1010~S1040:

[0149] In step S1010, a substrate is provided, and a first doped region is formed on or in the substrate.

[0150] In step S1020, a power supply excitation electrode is formed in the first doped region, the power supply excitation electrode having a trench electrode structure.

[0151] In step S1030, a vertical Hall electrode is formed in the first doped region.

[0152] In step S1040, a planar Hall electrode is formed in the first doped region.

[0153] The power excitation electrode is used to apply excitation current or excitation voltage to the three-dimensional Hall element. The power excitation electrode includes an outer power excitation electrode and an intermediate power excitation electrode. The formation of the power excitation electrode in the first doped region includes: forming the intermediate power excitation electrode in the middle of the first doped region and forming the outer power excitation electrode around the first doped region.

[0154] The vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface. The magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other. The vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode. The planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface. The planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode. The vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the intermediate power excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode. The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction.

[0155] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0156] The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction. The planar Hall electrode has a planar Hall positive electrode and a planar Hall negative electrode symmetrically arranged with respect to the straight line extending along the first or second direction through the intermediate power excitation electrode.

[0157] According to an embodiment of the present disclosure, the planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region.

[0158] According to an embodiment of this disclosure, the peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode.

[0159] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is rectangular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0160] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power supply excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

[0161] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and a second planar Hall electrode; the line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0162] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at two adjacent corners of the designated rectangle, and the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle.

[0163] According to an embodiment of this disclosure, when the projection of the closed symmetrical trench electrode structure onto the substrate surface is annular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0164] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power supply excitation electrode, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

[0165] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode and / or a second planar Hall electrode; the line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including:

[0166] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the specified circle by the first direction and the second direction; the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the bisecting points of the arcs of the other two adjacent quadrants obtained by dividing the specified circle by the first direction and the second direction.

[0167] According to embodiments of this disclosure, the three-dimensional Hall element further includes a second doped region stacked with the first doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions onto the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in that third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material. The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure. The power supply excitation electrode penetrates through the first and second doped regions.

[0168] According to an embodiment of this disclosure, there are four peripheral power excitation electrodes, each of which is symmetrically disposed at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode is disposed at the center of the first doped region.

[0169] According to embodiments of this disclosure, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including:

[0170] The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are symmetrically arranged on the center lines of the two extended arms of the first doped region along the first direction, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are symmetrically arranged on the center lines of the two extended arms of the first doped region along the second direction; wherein, the first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

[0171] According to embodiments of this disclosure, the planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode; the line connecting the positive and negative planar Hall electrodes is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first or second direction, including:

[0172] The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the second vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the second vertical Hall electrode.

[0173] According to embodiments of this disclosure, the second doped region is disposed in or on the substrate, and the first doped region is disposed above the second doped region and the trench filled with insulating material.

[0174] This disclosure also provides an electronic device comprising a three-dimensional Hall element as described in the embodiments of this disclosure, or a three-dimensional Hall element prepared according to any of the preparation methods described in the embodiments of this disclosure.

[0175] This disclosure also provides a chip, including the electronic device described above.

[0176] This disclosure also provides an electronic device that includes the chip described in the embodiments of this disclosure.

[0177] This disclosure utilizes a trench electrode structure to form the power excitation electrode, abandoning the traditional method of using a "deep doped trap" to form a deep current path and separate the doped region. Instead, the "trench electrode" serves as the structure for current guidance and magnetic field sensing. This allows the depth and path of the current to be directly controlled by the physical depth and shape of the trench, rather than indirectly controlled by the energy and dose of ion implantation. Therefore, high-energy ion implantation is unnecessary, ensuring perfect compatibility with CMOS processes, simplifying the fabrication process, ensuring uniform current diffusion in the depth direction, significantly reducing zero bias, and thus improving the performance of the three-dimensional Hall sensor. Furthermore, by placing the vertical Hall electrode on a straight line passing through the intermediate power excitation electrode and extending along the first or second direction, and located on both sides of the intermediate power excitation electrode, orthogonality and accuracy of the response to the horizontal magnetic field direction are ensured. Furthermore, the connection line of the planar Hall electrode is parallel to and does not coincide with the straight line that passes through the intermediate power excitation electrode and extends along the first or second direction. This layout minimizes electrical crosstalk and magnetic coupling interference between the two detection modes, ensuring efficient extraction of the most effective Hall voltage signal. Finally, by forming the power excitation electrode on a single doped region or two stacked doped regions, the power excitation electrode can simultaneously provide excitation for the functional areas that realize the measurement of vertical Hall voltage and planar Hall voltage, reducing the number of electrodes, saving chip area, and achieving omnidirectional measurement of the spatial magnetic field at the same location simultaneously through different electrode designs and current paths. This breaks the traditional pattern of separating the two layouts, greatly improves chip space utilization, realizes device miniaturization, and improves chip integration.

[0178] The above description is merely a preferred embodiment of this disclosure and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this disclosure is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features disclosed in this disclosure that have similar functions.

Claims

1. A three-dimensional Hall element, characterized in that, The three-dimensional Hall element includes: a substrate; a first doped region; a power excitation electrode, a vertical Hall electrode, and a planar Hall electrode formed in the first doped region; the power excitation electrode is used to apply an excitation current or an excitation voltage to the three-dimensional Hall element; the power excitation electrode includes a peripheral power excitation electrode and a middle power excitation electrode; the vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface; the magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other; the vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode; the planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface; the planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode; the vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the middle power excitation electrode, wherein: The power excitation electrode has a trench electrode structure, the peripheral power excitation electrode is located outside the first doped region, and the intermediate power excitation electrode is located in the middle of the first doped region; The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode. The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line that passes through the intermediate power supply excitation electrode and extends along the first direction or the second direction.

2. The three-dimensional Hall element according to claim 1, characterized in that, The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction. The planar Hall positive electrode and the planar Hall negative electrode are symmetrically arranged with respect to a straight line extending along the first direction or the second direction, passing through the intermediate power supply excitation electrode.

3. The three-dimensional Hall element according to claim 1, characterized in that, The first doped region is disposed in or on the substrate.

4. The three-dimensional Hall element according to claim 1, characterized in that, The planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region.

5. The three-dimensional Hall element according to claim 4, characterized in that, The peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode.

6. The three-dimensional Hall element according to claim 5, characterized in that, When the projection of the closed symmetrical trench electrode structure onto the substrate surface is rectangular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power supply excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power supply excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

7. The three-dimensional Hall element according to claim 6, characterized in that, The planar Hall electrode includes a first planar Hall electrode and a second planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at two adjacent corners of the designated rectangle, and the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle.

8. The three-dimensional Hall element according to claim 6, characterized in that, The rectangle is a square.

9. The three-dimensional Hall element according to claim 5, characterized in that, When the projection of the closed symmetrical trench electrode structure onto the substrate surface is annular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power supply excitation electrode, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

10. The three-dimensional Hall element according to claim 9, characterized in that, The planar Hall electrode includes a first planar Hall electrode and / or a second planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the bisecting points of the arcs of the other two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

11. The three-dimensional Hall element according to claim 1, characterized in that, The three-dimensional Hall element further includes a second doped region stacked with the first doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions on the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in the third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material. The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure. The power supply excitation electrode extends through the first doped region and the second doped region.

12. The three-dimensional Hall element according to claim 11, characterized in that, There are four peripheral power excitation electrodes, each of which is symmetrically disposed at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode is disposed at the center of the first doped region.

13. The three-dimensional Hall element according to claim 12, characterized in that, The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the first direction, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the second direction. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

14. The three-dimensional Hall element according to claim 13, characterized in that, The planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the second vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the second vertical Hall electrode.

15. The three-dimensional Hall element according to claim 11, characterized in that, The second doped region is disposed in or on the substrate, and the first doped region is disposed on the second doped region and the trench filled with insulating material.

16. The three-dimensional Hall element according to claim 1, characterized in that, in, The trench electrode structure is formed in the following manner: The sidewalls of the trench extending into the first doped region are doped and the trench is filled with metal. The doping type of the sidewalls of the trench is the same as that of the first doped region, and the doping concentration of the sidewalls of the trench is greater than that of the first doped region.

17. A method for fabricating a three-dimensional Hall element, characterized in that, The preparation method includes: A substrate is provided, and a first doped region is formed on or in the substrate; A power excitation electrode is formed in the first doped region, and the power excitation electrode has a trench electrode structure. A vertical Hall electrode is formed in the first doped region; A planar Hall electrode is formed in the first doped region; The power excitation electrode is used to apply excitation current or excitation voltage to the three-dimensional Hall element. The power excitation electrode includes an outer power excitation electrode and an intermediate power excitation electrode. The formation of the power excitation electrode in the first doped region includes: forming the intermediate power excitation electrode in the middle of the first doped region and forming the outer power excitation electrode around the first doped region. The vertical Hall electrode is used to detect the Hall voltage generated by a magnetic field direction parallel to the substrate surface. The magnetic field direction parallel to the substrate surface includes a first direction and a second direction perpendicular to each other. The vertical Hall electrode includes a vertical Hall positive electrode and a vertical Hall negative electrode. The planar Hall electrode is used to detect the Hall voltage generated by a magnetic field direction perpendicular to the substrate surface. The planar Hall electrode includes a planar Hall positive electrode and a planar Hall negative electrode. The vertical Hall electrode and the planar Hall electrode are disposed between the peripheral power excitation electrode and the intermediate power excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode. The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with the straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction.

18. The preparation method according to claim 17, characterized in that, The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The first vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the first direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The second vertical Hall electrode has a vertical Hall positive electrode and a vertical Hall negative electrode symmetrically arranged on a straight line extending along the second direction through the intermediate power excitation electrode, and located on both sides of the intermediate power excitation electrode. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction. The planar Hall positive electrode and the planar Hall negative electrode are symmetrically arranged with respect to a straight line extending along the first direction or the second direction, passing through the intermediate power supply excitation electrode.

19. The preparation method according to claim 17, characterized in that, The planar Hall electrode has the trench electrode structure, and the vertical Hall electrode is formed on the surface of the first doped region.

20. The preparation method according to claim 19, characterized in that, The peripheral power excitation electrode has a closed symmetrical trench electrode structure, and the intermediate power excitation electrode is located at the center of the peripheral power excitation electrode.

21. The preparation method according to claim 20, characterized in that, When the projection of the closed symmetrical trench electrode structure onto the substrate surface is rectangular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power supply excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively symmetrically arranged along the first direction at the center of the first opposite side of a designated rectangle with a preset size centered on the intermediate power supply excitation electrode. The vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively symmetrically arranged along the second direction at the center of the second opposite side of the designated rectangle.

22. The preparation method according to claim 21, characterized in that, The planar Hall electrode includes a first planar Hall electrode and a second planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at two adjacent corners of the designated rectangle, and the planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the other two adjacent corners of the designated rectangle.

23. The preparation method according to claim 20, characterized in that, When the projection of the closed symmetrical trench electrode structure onto the substrate surface is annular, the vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode; the vertical Hall positive electrode and the vertical Hall negative electrode of the vertical Hall electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are respectively disposed along the first direction on a designated circle with a preset radius centered on the intermediate power supply excitation electrode, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are respectively disposed along the second direction on the designated circle.

24. The preparation method according to claim 23, characterized in that, The planar Hall electrode includes a first planar Hall electrode and / or a second planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are respectively disposed at the bisecting points of the arcs of two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are respectively disposed at the bisecting points of the arcs of the other two adjacent quadrants obtained by dividing the designated circle by the first direction and the second direction.

25. The preparation method according to claim 17, characterized in that, The three-dimensional Hall element further includes a second doped region stacked with the first doped region. Both the first and second doped regions have a pair of extension arms extending along the first direction and a pair of extension arms extending along the second direction. The projections of the first and second doped regions on the substrate surface are overlapping cross shapes. The projected width of the extension arms of the first doped region is greater than the projected width of the extension arms of the second doped region. The dimension of the first doped region in a third direction perpendicular to the substrate surface is smaller than the dimension of the second doped region in the third direction. The second doped region is isolated from the surrounding area by trenches filled with insulating material. The planar Hall electrode and the vertical Hall electrode are respectively formed on the surface of the first doped region; or, the planar Hall electrode is formed on the surface of the first doped region, and the vertical Hall electrode has the trench electrode structure. The power supply excitation electrode extends through the first doped region and the second doped region.

26. The preparation method according to claim 25, characterized in that, There are four peripheral power excitation electrodes, each of which is symmetrically disposed at the ends of the four extension arms of the first doped region; the intermediate power excitation electrode is disposed at the center of the first doped region.

27. The preparation method according to claim 26, characterized in that, The vertical Hall electrode includes a first vertical Hall electrode and a second vertical Hall electrode. The vertical Hall positive electrode and the vertical Hall negative electrode are disposed on a straight line passing through the intermediate power excitation electrode and extending along the first direction or the second direction, and are located on both sides of the intermediate power excitation electrode, including: The vertical Hall positive electrode and the vertical Hall negative electrode of the first vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the first direction, and the vertical Hall positive electrode and the vertical Hall negative electrode of the second vertical Hall electrode are symmetrically arranged on the center lines of the two extension arms of the first doped region along the second direction. The first vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the second direction, and the second vertical Hall electrode is used to detect the Hall voltage generated by the magnetic field component in the first direction.

28. The preparation method according to claim 27, characterized in that, The planar Hall electrode includes a first planar Hall electrode, a second planar Hall electrode, a third planar Hall electrode, and a fourth planar Hall electrode; The line connecting the planar Hall positive electrode and the planar Hall negative electrode of the planar Hall electrode is parallel to and does not coincide with a straight line passing through the intermediate power supply excitation electrode and extending along the first direction or the second direction, including: The planar Hall positive electrode and the planar Hall negative electrode of the first planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the second planar Hall electrode are symmetrically arranged in the second direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the first vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the third planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall positive electrode of the second vertical Hall electrode. The planar Hall positive electrode and the planar Hall negative electrode of the fourth planar Hall electrode are symmetrically arranged in the first direction at the edges of the extended arms on both sides of the vertical Hall negative electrode of the second vertical Hall electrode.

29. The preparation method according to claim 25, characterized in that, The second doped region is disposed in or on the substrate, and the first doped region is disposed on the second doped region and the trench filled with insulating material.

30. An electronic device, characterized in that, It includes the three-dimensional Hall element according to any one of claims 1 to 16, or the three-dimensional Hall element prepared by the preparation method according to any one of claims 17 to 29.

31. A chip, characterized in that, Includes the electronic device as described in claim 30.

32. An electronic device, characterized in that, Includes the chip described in claim 31.

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