Photoelectric plasma synthesis method direct-writing sintering nano-micron circuit

Abstract

The invention discloses a photoelectric plasma synthesis method direct-writing sintering nano-micron circuit. Point-to-point and nano-micron space plasma field control is completed under digital scanning of laser points and electron beams, and plasma synthesis sintering is instantly completed at low power and micro-flying picoseconds or above through a micro-nano-scale physicochemical synthesis technology. According to the method, a direct-writing synthesis sintering film and a plasma transfer printing film are used as medium consumables, a transfer printing method that electron beams, UV and EUV laser beams clamp a plurality of personalized plasma transfer printing films is adopted, a source body of a target object is synthesized by electronic circuits such as a conductor, a semiconductor and a dopant, multiple times of superposition, hole digging, nicking, doping, outer edge and insulation are carried out on the same sediment, and a nano-micron conductive matrix is formed. Provided is a semiconductor chip matrix. The invention also provides a new method for manufacturing electronic devices in the fields of Filter, ePaper, FPC, TFT, Sensor, 5G communication, satellite, sensitive wave film, radar and the like.

Description

TECHNICAL FIELD

[0001] A photoelectric plasma synthesis method for direct writing sintering nanometer circuit. The direct writing synthesis sintering technology support is composed of: photoelectric point scanning source / synthesis target source body layer(direct writing synthesis sintering layer) / binding photoetching layer(photoresist) / base film or substrate. The synthesis target source body and the binding photoetching layer are the direct writing receptors of the "photoelectric action point". The receptor on the base film is the main body of the electronic circuit (referred to as "direct writing synthesis sintering film"). The receptor on other electronic circuits is 3D printed electronics. The direct writing synthesis sintering film and the plasma transfer film are used as medium consumables, and the semiconductor and conductor main characteristics of the synthesis target source body in the electronic circuit are controlled by point-to-point and nanometer space plasma field synthesis under the digital scanning of the laser point and electron beam working system. The plasma direct writing synthesis sintering is realized in the micro-nanometer scale in the low-power, micro-flying picosecond and above instant. The plasma direct writing synthesis sintering material includes metal or non-metal and its synthesis, quantum dots, microcrystals, semiconductors and other synthesis targets. The conductive electronic circuit and the semiconductor electronic circuit are born by the photoelectric plasma synthesis method for direct writing sintering. This also provides a new method for manufacturing electronic devices in the fields of Filter, ePaper, FPC, TFT, Sensor, 5G communication, satellite, sensitive wave film, radar, etc.

[0002] The direct writing synthesis sintering film and the photoelectric synthesis method for direct writing sintering are as follows: the support structure of the micro-nanometer scale and the physical and chemical synthesis sintering technology is composed of: photoelectric point scanning source / synthesis source body layer(direct writing synthesis sintering layer) / binding photoetching layer(photoresist) / base film substrate. The synthesis source body layer and the photoetching binding layer are the direct writing receptors of the nanometer circuit substrate surface "photoelectric action point". The receptor on the base film is a main body of an electronic circuit (referred to as "direct writing synthesis sintering film"). The receptor on other electronic circuits is 3D printed electronics.

[0003] The photoelectric synthesis method for direct writing sintering of the plasma transfer film is as follows: when the synthesis target source body is coated on the base film(or contains a transfer auxiliary layer), and the binding layer is coated on the surface of the printing object(or has or does not have), the film is the synthesis target source body and the point-to-point transfer consumable(referred to as the plasma transfer film). The source body of the conductor, semiconductor, dopant and other electronic circuit synthesis targets is transferred by holding multiple personalized plasma transfer films by an electron beam, UV, EUV laser beam. The source body is transferred multiple times on the same deposit to form a pit, a notch, a doping, an outer edge and an insulation. This provides another new manufacturing method for nanometer semiconductive matrix and conductive matrix. Plasma transfer film, technical features of synthetic target source body, transfer and transfer technology: Point-to-point, line or string transfer and transfer of direct-write synthesis and sintering target source body, or full-plate transfer and transfer, after direct-write synthesis and sintering source body, synthesis and sintering; Plasma non-contact transfer and transfer of direct-write synthesis and sintering target source body; Multiple personalized plasma transfer film slitting narrow strips, multiple string direct-write synthesis and transfer and transfer. This method can reduce the technical difficulty of synthesizing source body layer, forming multiple substance plasma resonance, direct-write synthesis and sintering.

[0004] Reaction of synthetic source body layer: plasma synthesis layer and its continuous phase or grid electronic circuit, conductive material and other components contained therein, are synthetic source bodies at the synthesis point, which undergo latent period physicochemical reaction, point heat effect under photoelectric action (laser, electron beam), controlled point plasma cracking mixing, sublimation, selective combination, micro growth or fusion (sintering), forming continuous nanometer main electronic circuit, which is the most "simple and convenient" method of direct-write sintering of nanometer electronic circuit at present.

[0005] Direct-write synthesis and sintering source body design: nanometer space plasma field control, micro-flying picosecond transient physicochemical synthesis technology, is the combination of plasma synthesis source layer on the surface of photoetching binding layer, and the "electrons" and "holes" generated at the same time as the synthesis growth template of the photoetching binding layer (photoresist), and controlled arrangement and combination. In addition to being used as conductive materials, synthetic source body components also include semiconductor materials, insulating materials, photoelectric materials, magnetic materials, quantum dots, organic and inorganic additives, plant and animal chemical and physical sensing materials, wave-sensitive materials, etc., and exist in the plasma synthesis layer, and are formed in the nanometer 3D circuit.

[0006] Active electron transition excitation: the combination surface of the synthetic source body layer (direct-write synthesis and sintering layer) and the binding photoetching layer (photoresist) has a dark (latent) reaction of the synthetic source body and the photoresist on the combination surface, which produces active electron transition energy metal, non-metal atom, or its ion complex, and is bound to the fixed position (non-full plate) on the combination surface. Under the excitation of laser points and electron beams, the entire plasma resonance of the synthetic source body is realized.

[0007] Rotating roller micro-helix photoelectric synthesis method direct sintering: In this technical solution, the photoelectric synthesis method direct sintering nanometer circuit can be completed on the platform; better is to fix the printing material of nanometer circuit on the roller, the photoelectric action point moves axially, and leaves the micro-helix (or non-helix), full-plate photoetching and synchronous sintering point on the rotating roller. This is a point-to-point origin synthesis method, and the controlled laser, electron beam, especially the integrated multi-beam photoelectric source is the power source. The point-to-point photoelectric synthesis method on the rotating roller is beneficial to the unchanged nanometer level registration accuracy of the printing material in the multi-process and post-process linkage, and realizes the industrialized manufacturing of 3D integrated multi-material nanometer electronic circuit. Thus, large area, unlimited length, photoelectric synthesis method direct sintering can be realized.

[0008] “Nanometer space plasma field synthesis control”: “Photoelectric effect” first chooses ultraviolet, deep ultraviolet, micro-flying picosecond and above frequency laser point light source, especially the “point-to-point” scanning light source of integrated multi-laser point. The coherent light source, multi-wavelength pump pulse auxiliary of multi-mirror or integrated semiconductor solid laser are arranged and combined to meet the synthesis conditions of point-to-point plasma field to light beam, such as spectral width, beam frequency, spot size, power range, scanning direction and repetition number; External field auxiliary control of nanometer space plasma field: temperature and humidity, gas protection or participation in plasma synthesis, light wave, sound field, magnetic field, electric field or microwave external field auxiliary. BACKGROUND

[0009] Regarding the field of “direct sintering, micro-nano electronic circuit”: Comparative document 1,

Research Progress of Laser Direct Writing of Flexible Circuit

[0010] Definition of "direct write, micro-nano, electronic circuit". Comparison file 2:

Pan-semiconductor electronic circuit micro-nano direct write lithography technology

Method for laser direct writing sintering of micro-nano electronic circuit

[1002] "photoelectric point scanning source, plasma synthesis layer, lithography binding layer, base film substrate" of this application, especially the "direct printing surface" and "secondary direct printing surface" compared to the plasma synthesis layer (lithography synthesis sintering layer) / lithography binding layer (photoresist layer). The difference is that the former is "direct sintering of nano conductive material"; the latter is "direct synthesis of conductive material and sintering". The latter, the technical features of this application: electronic circuit and photoresist synchronous micro-nano synthesis direct writing: the semiconductor material and conductor main characteristic material in the electronic circuit are mainly synthesized by point-to-point synchronization in the non-solution and non-colloid micro-nano space. This is a new improvement on the definition of "direct writing".

[0011] Direct write lithography and sintering synchronization are achieved at the photoelectric action point to form nanometer circuit. This is achieved by "bridge island type" (CN201910714849.8 A bridge island type conductive film material), "random stone street" main consumables, and nanometer conductive material film material for direct sintering. In addition, nanometer conductive material is pre-synthesized, and the process before and after is complex, fine and investment-intensive. This application uses "synthetic source body"; in addition to conductive material, the source body and the synthesis material have a much wider surface.

[0012] About plasma synthesis: "point heat effect, plasma effect, cracking synthesis reaction, sublimation selection combination, latent period physicochemical reaction under photoelectric action (laser, electron beam)".

[0013] Plasma polymerization is a new method of preparing polymer thin films by using plasma discharge to ionize monomers and make them produce various active species, which form polymer films through addition reactions between active species or between active species and monomers. It is a new method of preparing polymer thin films, such as conductive polymer films, photoresist films, separation membranes, high insulation films, optical thin films, thin film waveguides, biomedical materials, functional information materials (including printing materials, optical fibers, nanomaterials), etc. As a "dry" process, plasma polymerization is easy and flexible to operate.

[0014] Traditional in-situ synthesis of metal coating: electroplating, water plating, sputtering, evaporation, nano silver plating, gold plating, etc.; chip production photoetching after washing and then selecting coating, etc. These are far from the method of "photoelectric synthesis direct sintering nanometer circuit".

[0015] Plasma polymerization means: the discharge method used in plasma polymerization device includes all types of plasma discharge forms. ① Vacuum plasma discharge device: direct current (DC) glow discharge, radio frequency (RF) glow discharge, microwave discharge (WF), and recently developed penning discharge plasma polymerization device, etc. can be used. ② High pressure (including atmospheric pressure) plasma discharge device, including corona discharge, dielectric barrier discharge (DBD), inductive dielectric barrier discharge (IDBD), arc discharge (Arc discharge), plasma gun, etc. (Baidu Encyclopedia. Chemical engineering terminology).

[0016] The plasma synthesis layer in this application

[1002] and the photoetching binding layer are the direct writing receptors of the "photoelectric action point" on the surface of the nanometer circuit substrate. The receptor on the base film is an electronic circuit main consumable or a light heat transfer film; the receptor on the base film on other electronic circuits is 3D printed electronics.

[0017] Regarding the structure of the "photoelectric action point" direct writing receptor and the "synthetic source body" layer, the comparison file is: 4,

Pulse Electrochemical Deposition of Controllable Synthesis of Nanosilver in Forced Circulation Reactor

Preparation of Silver Phosphate Composite Semiconductor Material and Research on Its Photocatalytic Performance

Magnetic Ag3PO4 / chitosan / Fe3O4 composite catalyst preparation and its visible light catalytic performance

Thermal decomposition of silver acetate: physical geometric kinetic features and formation of nanosilver

[0018] Comparative document 8:

Plasmonic field space control: new technology for chemical synthesis at nanoscale

[0019] Comparative document 9:

Preparation, characterization and thermal decomposition mechanism of super aluminum thermal agent precursor

[0020] The present application

[1005] proposes a more "simple" method. Even under the working conditions of commercial ultraviolet, deep ultraviolet marking machine, photoetching machine, the technical solution

[1006] can be implemented. UV point-to-point excitation generates plasma, generates good conductive material (generated nanometer elemental melt, such as noble metal conductive material, etc.), which is to avoid the thermal effect in point-to-point synthesis, which can seriously burn the base film and make it black and paste the plate. Nano-micro space plasma field control, micro-flying picosecond instantaneous physicochemical synthesis technology is that the plasma synthesis source layer is combined on the surface of the photoetching binding layer, and the "electrons" and "holes" generated at the same time as the photoetching binding layer (photoresist) are arranged and combined under control. The process in the "synthesis technology" is not a "simple" statement of the word "deposition". SUMMARY

[0021] Nano-micro circuit, photoelectric synthesis method direct writing sintering work system selection: a, electron beam direct writing type: Shanghai Nanteng instrument electron beam direct writing system ELS-F125 (Japan); b, photoetching machine type: Suda Weige TTT-07-UV Litho-ACA UV, EUV photoetching machine; c, plate making machine type: Fuji B2 format CTP offset plate making machine Luxel_T-6300, UV laser electronic element micro printing, gravure plate making system (New FX series) of Xinkong Corporation; Direct writing synthesis sintering work system: electron beam direct writing type, UV-EUV photoetching machine type, marking machine, plate making machine type; Direct writing synthesis sintering and plasma transfer can be completed on the platform, especially the printing material of nano-micro circuit is fixed on the roller, and the integrated photoelectric scanning point is kept moving in axial direction by means of the above-mentioned medium consumables, and micro spiral (or non-spiral) full-plate photoetching, transfer and synchronous synthesis sintering are left on the rotating roller. In this way, large format, unlimited length, photoelectric synthesis method direct writing sintering nano-micro circuit can be manufactured. This is a point-to-point origin synthesis method, and the controlled laser, electron beam, especially the integrated multi-beam photoelectric source is the power source. The point-to-point photoelectric synthesis method on the rotating roller is beneficial to the nano-micro level registration accuracy of the printing material in multi-process, post-process linkage, and realizes 3D integrated multi-category material nano-micro electronic circuit industrialization manufacturing. The above-mentioned equipment can be referred to for extension or modification. d, marking machine class: Keyence UV laser marking machine MD1020C, Suzhou Jinghai green picosecond laser marking machine, etc. The working power required by the working system of nanometer circuit, photoelectric synthesis method direct writing sintering is basically suitable.

[0022] Selection of light source for the working system of nanometer circuit, photoelectric synthesis method direct writing sintering: Such as Shenzhen Ruifeng laser Expert III 355 series ultraviolet laser, a kind of integrated multi-channel semiconductor pumped pulse solid laser; For multi-mirror or integrated semiconductor solid laser, arrange and combine its coherent light source, multi-wavelength pumped pulse auxiliary, in order to meet the needs of point-to-point plasma field on beam spectral width, beam frequency, spot size, power range, scanning direction and repetition number, etc. External field auxiliary control of nanometer space plasma field: temperature and humidity, gas protection or participation in plasma synthesis, sound field, magnetic field, electric field or microwave external field auxiliary.

[0023] Direct writing synthesis sintering consumable coating machine: synthesis source layer (plasma synthesis sintering layer) / photoresist binding layer (photoresist) / base film substrate-direct writing synthesis sintering consumable coating machine, self-built.

[0024] Synthesis source layer (plasma synthesis layer) / photoresist binding layer implementation design: Synthesis source layer / photobinding layer, selective absorption of light, depends on wavelength. Energy level interval matches incident photon energy, wavelength peak valley absorption spectrum range. A very small amount of atoms in the mixture or compound and its change will cause the appearance of spectral absorption line and great change of optical density. From which to select

[3001]

[3002] make UV light frequency spectrum correction.

[0025] Direct writing synthesis sintering consumable implementation design: 1, photoresist binding layer component design: "photoelectric interaction point" acceptor on the substrate is a non-solution and non-colloid solid film layer. This "film layer" is the carrier of direct writing sintering nanometer circuit. a, its light absorption spectrum and sensitivity must be unified with the synthesis source layer; b, the photoresist binding layer of "photoelectric interaction point" after photoetching and binding, it is not allowed to have sublimation, ashing, migration and pollution of plasma synthesis layer, so that "conductor, semiconductor and other electronic circuit synthesis target" is invalid; c, in addition to the binding effect of photoresist binding layer on plasma synthesis layer, it also has the effects of accepting synthesis, selection, template, oxidation and reduction, etc. Photoetching binding layer component photoresist main material selection full solid photoelectric initiation resin (resin molecular chain contains photoelectric initiation group) is the first choice. For example: Photoelectric particle flow rapid forming and its cured resin: siloxane compound of POSS. Each POSS molecule contains organic substituent group. Low dielectric constant, high heat resistance, high mechanical strength, excellent optical performance and multiple functionality, which can be reactive or inert. As a crosslinking agent to improve the hardness and particle dispersion, more particularly the interaction of its silicon inorganic framework with the synthetic layer is complementary; Other, such as: commercial PI photoresist PI / PBO7110, 8820, etc. Commercial photoresist may be directly implemented in this application. These commercial products are not expected to work under the working conditions of the plasma synthesis layer, and the configuration is good. 2, photoetching synthesis sintering layer design: a, plasma synthesis method of synthesis layer. The technical features of this application are: Synthesis source layer (direct writing synthesis sintering layer) / binding photoetching layer (photoresist) bonding surface, there is a dark (latent) reaction of synthesis source and photoresist surface, reducing agent, first produce electron transition energy active metal, non-metallic atom, or its ion complex, binding to the fixed position (non-full version) of the bonding surface. Under the excitation of laser point, electron beam to realize the driving of the whole synthesis source plasma resonance. Such as trace Ag plasma combined with flower-like Bi2WO6 to form Ag / Bi2WO6 composite photocatalyst; Or the combination of metal and non-metal, non-metal compound. Point-to-point plasma resonance of synthesis source makes the synthesis source produce a series of physicochemical reactions such as cracking reaction, reduction reaction, induced modification, recombination polymerization, especially the synchronous sintering annealing of the generated metal and semiconductor materials. Binding photoetching layer (photoresist) also contains trace electron transition energy active metal, metal compound, or its ion complex, which improves its absorption coefficient to extreme ultraviolet light. b, electron transition energy active metal compound: chloroauric acid, silver phosphate, sodium stannate, aluminum chloride and other noble metal compounds. This is the synthesis source of conductive circuit. Some are also "initiators" of "driving the whole synthesis source plasma resonance"; For example, under near ultraviolet light, AgCl will produce photo-generated electrons and holes; AlCl3 has very low melting point and boiling point, and will sublimate. Its vapor is associated with double molecules, strong Lewis acid; Ag3PO4 is a high-efficiency photocatalyst; AgCO3 is a new type of silver-based semiconductor photocatalytic material with good catalytic performance. After forming a heterojunction with other semiconductors, the catalytic performance and stability are improved. c, synthetic target source body layer, electronic transition energy active non-metallic compounds: that is, conductors, semiconductors, dopants, and other electronic circuit synthesis target source body: electronic transition energy active metal compounds: chloroauric acid, silver phosphate, tin dichloride, and other noble metal compounds; electronic transition energy active non-metallic compounds: carbon, silicon, boron, bismuth, germanium, phosphorus and other non-metallic compounds, especially: BF3, SiCl4, PH3, Ge, GaN and other compounds of the above metals, non-metals, such as carbonates, phosphates; Al, SiO2, TaC, TiO2, and ZnO, etc. nanomaterials; N, P, As; B, Ga, In, etc. semiconductor ion dopants. The above electronic circuit synthesis target source body, point-to-point "direct writing sintering", "photoelectric synthesis", "plasma transfer film technology", plasma direct writing synthesis sintering includes metal or non-metal and its synthesis, quantum dots, microcrystalline and other synthesis target objects, conductive electronic circuits, semiconductor electronic circuits are born from this. 3, direct writing synthesis sintering consumables (including photo-thermal point-to-point transfer consumables) forming: photoetching binding layer (photoresist) and photoetching synthesis sintering layer use different types of dispersion liquid, which are coated on the surface of the base film or other printing material in turn and dried. Direct writing synthesis sintering source body is bound to the photoetching binding layer, and all non-direct writing synthesis sintering source bodies are washed; after photoelectric plasma "point-to-point" synthesis, there is no sublimation, ashing, migration, and plasma synthesis layer pollution, which makes the "conductor, semiconductor, and other electronic circuit synthesis target objects" ineffective.

[0026] Multiple personalized plasma transfer film transfer, see:

[3003]

[3004]

[3005] When the synthesis target source body is coated on the base film (or contains a transfer auxiliary layer), the binding layer is coated on the surface of the printing material (or has it or not), the film is the synthesis target source body, point-to-point transfer consumables (referred to as plasma transfer film). Electron beam, UV, EUV laser beam, hold multiple personalized plasma transfer film transfer, the source body of conductor, semiconductor, dopant, and other electronic circuit synthesis target objects is transferred multiple times on the same deposit, with pits, scratches, doping, edges, insulation... This provides another new manufacturing method for nanometer semiconductive matrix and conductive matrix. Plasma transfer film, technical features of synthesis target source body and transfer transfer: Point-to-point, line or string transfer transfer of direct writing synthesis sintering target source body, or full-plate transfer transfer, direct writing synthesis sintering source body, and then synthesis sintering; Plasma non-contact transfer transfer of direct writing synthesis sintering target source body; The method comprises the following steps: adopting multiple personalized plasma transfer film slitting narrow strips, and adopting a serial direct writing synthesis and transfer printing method. This method can reduce the technical difficulty of synthesis source layer, forming a multi-substance plasma resonance, and direct writing synthesis sintering.

[0027] The application of the plasma transfer film and the process of sintering the target object by the plasma direct writing synthesis are changed from complex and difficult to control to simple. The electron beam, UV, EUV laser beam, and the holding of multiple personalized plasma transfer films

[3005] transfer method can be used for multiple superposition, pit digging, notch making, doping, outer edge, insulation, and nanometer conductive matrix on the same deposit, which provides another new method for manufacturing TFT by taking the oxide semiconductor as an active layer. For example, when the printing object is a substrate base film on which a SiC substrate or a GaN outer edge is deposited, it is the printing object of the

[3005] plasma transfer film and transfer printing. Through pit digging and notch making, the multiple personalized plasma transfer film

[3005] transfer method can be used for forming a plasma doped deposit, an outer edge, and a nanometer conductive matrix in a “point-to-point” non-contact manner, which is applied to the manufacturing of devices in the fields of ePaper, TFT, FPC, Filter, 5G communication, satellite, radar, and the like.

[0028] “Nanometer and micrometer space plasma field synthesis control”: The “photoelectric effect” is first proposed for a laser point light source with a frequency of ultraviolet, deep ultraviolet, and micro-flying picosecond and above, especially a “point-to-point” scanning light source integrated with multiple laser points. The coherent light source and multiple wavelength pump pulse assistance of a multiple-mirror or integrated semiconductor solid laser are arranged and combined to meet the synthesis conditions of the point-to-point plasma field, such as the spectral width, beam frequency, spot size, power range, scanning direction, and repetition number of the light beam. External field assistance control of the nanometer and micrometer space plasma field: temperature and humidity, gas protection or participation in plasma synthesis, light wave, sound field, magnetic field, electric field, or microwave external field assistance. BRIEF DESCRIPTION OF DRAWINGS

[0029] The following description of the drawings, Figures 1-4 is the first experimental report test graph of the technical scheme of the “photoelectric plasma synthesis method direct writing sintering nanometer and micrometer circuit”. The applicant's implementation number is 20240717, and the experimental conditions are too different from the technical scheme points proposed in the present application. Figure 1 , a simulation of a partial FPC electronic circuit diagram; The complete design is 8 cm x 12 cm, and the resolution is 4000 DPI; the simulation is partial Figure 1 cm x 1 cm, the total bus width is about 30 μm, and the resolution is 2400 DPI; Figure 2FPC gold wire grid after direct writing synthesis sintering; FPC gold wire grid after direct writing synthesis sintering; Figure 3 FPC gold wire micrograph after direct writing synthesis FPC gold wire micrograph after direct writing synthesis (biological microscope, side light, 1500 times); There is clear direct writing synthesis gold nanometer sintering (sintering); there is a low glass transition temperature binding (photoetching) layer, a low glass transition temperature PET base film yellowing phenomenon (color photo). Figure 4 FPC gold wire grid after direct writing synthesis sintering. FPC gold wire grid after direct writing synthesis sintering; FPC gold wire grid after direct writing synthesis sintering; FPC gold wire grid after direct writing synthesis sintering. Figures 2-4 Gold direct writing, synthesis, sintering, all binding to photoetching layer (photoresist). This is a preliminary, simple small test before the application file is drafted, to evaluate the feasibility of the technical solution. "Plasma synthesis method direct writing sintering nanometer circuit" has enough to see a glimpse. The clarity and quality of the generated nanometer semiconductor matrix, conductive matrix mainly depend on the software and hardware capabilities of the photoetching equipment. The technical solution proposed in this application needs more application experiments to enrich the cognition. DETAILED DESCRIPTION

[0030] Embodiment of photoelectric synthesis method direct writing sintering nanometer circuit: (applicant implementation number: 20240717, preliminary, simple small test before the application file is drafted, to evaluate the feasibility of the technical solution) 1, base film: commercial 50-75 μm PET optical film, containing hydrophilic layer, fluorine-containing back adhesive release layer; 2, binding photoetching layer (photoresist): self-prepared, UV acrylate oligomer solution; 3, synthesis source layer (direct writing synthesis sintering layer): 2, 3 Sodium chloroaurate Two water, dispersed in a small amount of Megaman aloe vera clear Clear shower gel As a dispersing agent, remove bubbles, form a suitable coating state. 4, in the form of metering roller coating, 2, 3 are coated on 1 in turn; form synthesis source layer (direct writing synthesis sintering layer) 2-3 μm / binding photoetching layer (photoresist) 1-2 μm / base film substrate 50-75 μm; 3 is bound to 2 by temperature and pressure; Sodium chloroaurate 、 Megaman aloe vera clear shower gel Binding to 2; Remove the synthesis source layer 3 in the Megaman aloe vera clear shower gel ; residual in 23 binding surface Megaman aloe vera clear shower gel Wherein aloe macromolecule is the template for incubation dark reaction, plasma synthesis gold sheet reduction growth in binding surface; atomic gold is Sodium chloroaurate The initiator of plasma. The above forms a "direct writing synthesis sintering film (- gold film) " large roll. 5, take

[5001] 4 direct writing synthesis sintering film (- gold film) square centimeter, placed in the platform of kins UV laser marking machine MD1020C; Select, matrix FPC electronic circuit analog map local ( Figure 1 ); Select, MD1020C working parameters (table 1) as follows: Table 1: kins UV laser marking machine working parameters Sequence Name Direct write sintering parameters 1 3w laser power (%) ≤50 2 Scan speed (mm / s) 300-500 3 Pulse frequency (kHz) 150 4 Beam spot variable (%) ≤+20-+50 5 Translation gap (%) 5-10％@1 6 Fill gap (mm) 5-10％@1 7 Engraving times 2 (x, y axis) 6, synthesis sintering after, 4 direct writing synthesis sintering film in mixed solution, heat curing, get gold nanometer circuit. Figure 2 Direct writing synthesis sintering FPC local gold wire grid SEM Figure 3 Direct writing synthesis sintering FPC gold wire circuit microscopic Figure 4 Direct writing synthesis sintering FPC gold nanometer dispersion SEM This is the first experimental report of "photoelectric plasma synthesis method direct writing sintering nanometer circuit" technical scheme. This is the preliminary, simple small test before the drafting of the application file, to assess the feasibility of the technical scheme. "Plasma synthesis method direct writing sintering nanometer circuit" has been enough to see a glimpse. The clarity and quality of the generated nanometer semiconductor matrix, conductive matrix mainly depend on the software and hardware capability of the photoetching equipment. The technical scheme proposed in this application needs more application experiments to enrich the cognition. See (see figure description

[4001] )

[0031] Embodiment of photoelectric synthesis method direct writing sintering large format nanometer circuit: 1,

[4001] 4, form "direct writing synthesis sintering film (- gold film) " large roll, slitting into 25.4 mm narrow band, as plasma transfer film see

[3005]

[3006] ; 2. The MAN Roland DICOweb CTP system, a device that transfers hydrophobic material point by point on the surface of a rotating cylinder by infrared laser (830 nm) in the axial direction. The width of the point by point scanning of the infrared laser is slightly less than the width of the ribbon (line scanning). The cylinder rotates, and the line scanning is in series, spirally covering the entire surface of the cylinder (4.6 m x 2.3 m). But the total length can be infinite. The graphic resolution is 3200 dpi. 3. The MAN Roland DICOweb infrared laser (830 nm) head is replaced by the Expert III 355 series ultraviolet laser, an integrated multi-channel semiconductor-pumped pulsed solid-state laser

see 3002

Claims

1. A method for direct-write sintering of nano / micron circuits using photoelectric plasma synthesis. The support for this direct-write synthesis sintering technology consists of: a photoelectric point scanning source / a synthesis target material source layer (direct-write synthesis sintering layer) / a bonding photolithography layer (photoresist) / a base film or substrate. The synthesis target material source and the bonding photolithography layer are the direct-write acceptors of the "photoelectric action points." When this acceptor is on the base film, it becomes the main consumable material for generating electronic circuits (referred to as the "direct-write synthesis sintering film"); when this acceptor is on other electronic circuits, it becomes 3D printed electronics. "Plasma transfer film" is another indirect application of the direct-write synthesis sintering film. Its characteristics are: Using direct-write synthesis sintering film and plasma transfer film as media consumables, the main characteristics of semiconductors and conductors in electronic circuits are used to synthesize target material sources. Point-to-point, nano-micro space plasma field synthesis control is completed under the digital scanning of laser point and electron beam working system. Plasma direct-write synthesis sintering is realized at low power, micro-picosecond instantaneous, and micro-nano scale. Plasma direct writing synthesis of sintered materials includes metals or non-metals and their compounds, quantum dots, microcrystals, semiconductors and other synthetic targets. Conductive electronic circuits and semiconductor electronic circuits produced by direct writing and sintering via photoelectric plasma synthesis method were thus born.

2. The "synthetic target material source layer" in claim 1, i.e., the electronic circuit synthesis target material source layer of conductors, semiconductors, dopants, etc., includes: Metal compounds with active electron transition energy: chloroauric acid, silver phosphate, tin dichloride, and other noble metal compounds; Non-metallic compounds with active electron transition energy: carbon, silicon, boron, bismuth, tungsten, phosphorus and other non-metallic compounds, especially: BF3, SiCl4, PH3, Ge, GaN and the above metals, other non-metallic compounds, such as carbonates and phosphates; Nanomaterials such as Al, SiO2, TaC, TiO2 and ZnO; Semiconductor ion dopants such as N, P, As; B, Ga, In, etc.

3. The "plasma transfer film" in claim 1: When the source material for synthesizing the target material is coated on a base film (or containing a transfer auxiliary layer), and a bonding layer is coated on the surface of the substrate (with or without), this film is the source material for synthesizing the target material and a point-to-point transfer consumable (referred to as plasma transfer film). Electron beams, UV, and EUV laser beams are used to transfer multiple personalized plasma transfer films, allowing the source material for synthesizing electronic circuits such as conductors, semiconductors, and dopants to be repeatedly superimposed, pitted, etched, doped, edge-extended, and insulated on the same deposit. This provides another new manufacturing method for nano / micro semiconductor matrices and conductive matrices. Plasma transfer films offer the following technical characteristics for synthesizing target source materials and transferring them: For direct writing of the target material source for sintering, point-to-point, row-by-row, or string-by-string transfer printing, or full-page transfer printing, the direct writing of the sintering source material is followed by sintering. Plasma non-contact transfer printing of direct-write synthetic sintering target material source; Multiple personalized plasma transfer films are cut into narrow strips and synthesized and transferred multiple times through serial direct writing. This method can reduce the technical difficulties of synthesizing source layers, forming multi-material plasma resonance, and direct writing synthesis sintering.

4. The "laser dot, electron beam working system" in claim 1 includes electron beam direct writing systems, UV-EUV lithography machines, marking machines, and plate-making machines. Direct writing synthesis sintering and plasma transfer can be completed on a platform, particularly by fixing the substrate of nano-micro circuits to a roller. Using the aforementioned dielectric consumables, the integrated photoelectric scanning points are kept axially moving, leaving a micro-spiral (or non-spiral) full-page photolithography, transfer, and simultaneous synthesis sintering on the rotating roller. This allows for large-format, unlimited-length photoelectric synthesis direct writing sintering.

5. The "binding photolithography layer (photoresist)" in claim 1 has a dark (latent) reaction of reducing substances at the interface with the synthesis target source body layer. A small number of metal atoms, non-metal atoms, or their ionic complexes (not full-area) with active electron transition energy are first generated and bound to a fixed position on the interface. Under the excitation of laser points and electron beams, they drive and induce plasma resonance of the entire synthesis source body. In particular, in addition to the binding effect, the photolithography binding layer also has the functions of receiving plasma synthesis materials, promoting their growth, combination, template, and redox.

6. The "nano-micro spatial plasma field synthesis control" in claim 1: The "photoelectric effect" primarily utilizes ultraviolet, deep ultraviolet, and micro-picosecond and higher frequency laser point sources, especially integrated multi-laser point "point-to-point" scanning sources. For multi-mirror or integrated semiconductor solid-state lasers, their coherent light sources and multi-wavelength pump pulses are arranged and combined to meet the synthesis requirements of the point-to-point plasma field for beam spectral width, beam frequency, spot size, power range, scanning direction, and repetition count. External field-assisted control of nano- and micro-scale spatial plasma fields: temperature and humidity, gas protection or participation in plasma synthesis, and external field assistance such as light waves, sound fields, magnetic fields, electric fields or microwaves.

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