Deposition equipment for chemical vapor deposition silicon carbide ring production
By introducing a dispersion and adjustment mechanism into the chemical vapor deposition equipment, the problem of uneven gas dispersion in the furnace body is solved, achieving uniform contact and all-round reaction between the gas and the substrate, improving the uniformity and efficiency of silicon carbide deposition, and reducing substrate wear and the difficulty of impurity cleaning.
Patent Information
- Application Number
- CN202511058700.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-30
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2045-07-30
AI Technical Summary
In existing technologies, it is difficult for gas to disperse quickly at different heights when it enters the furnace through pipes, resulting in uneven silicon carbide deposition.
A chemical vapor deposition (CVD) device was designed, comprising a dispersion mechanism and an adjustment mechanism. Through components such as a fixed pipe, telescopic rod, clamp, fixed cylinder, connecting box, and square frame, uniform gas dispersion and uniform contact with the annular substrate are achieved. The lifting rod and motor drive mechanism promote the reciprocating motion of gas within the furnace body. The inlet pipe is fixed by a detachable filter plate and suction strip.
It achieves uniform gas dispersion within the furnace and omnidirectional reaction of the annular substrate, improving the uniformity and efficiency of silicon carbide deposition, reducing substrate wear, and simplifying the impurity cleaning process.
Smart Images

Figure CN120967320A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of chemical vapor deposition technology, specifically to a deposition equipment for the production of silicon carbide rings by chemical vapor deposition. Background Technology
[0002] Silicon carbide is an inorganic substance produced by high-temperature smelting of raw materials such as quartz sand, petroleum coke, and sawdust in an electric resistance furnace. It is a semiconductor that exists in nature as the rare mineral moissanite. Among non-oxide high-tech refractory materials such as C, N, and B, silicon carbide is the most widely used and economical, and can be called corundum or refractory sand. Industrially produced silicon carbide in China is divided into two types: black silicon carbide and green silicon carbide, both of which are hexagonal crystals.
[0003] Chinese patent CN119776806A discloses a deposition system for producing silicon carbide rings using chemical vapor deposition. The system injects silicon and carbon-containing gas into the furnace via a nozzle assembly, allowing the gas to be rapidly and uniformly distributed throughout the reaction chamber. This ensures the deposition rate and uniformity of silicon carbide on the ring-shaped single-crystal substrate. A detachable graphite support is formed by multiple assembled pillars, horizontal support rods, and pins. Adjusting the number of assembled pillars reduces the impact of the graphite support on the airflow. However, when the gas enters the furnace through pipes, it is difficult to quickly disperse it at different heights within the furnace. Summary of the Invention
[0004] To overcome the problem that gas is difficult to disperse quickly at different heights in the furnace body when it enters the furnace body through a pipe, the present invention provides a deposition equipment for the production of silicon carbide rings by chemical vapor deposition, including a furnace body; A fixing pipe is installed on the top of the furnace body; A motor housing, which is installed outside the furnace body, and a motor is installed inside the motor housing; The first telescopic rod is connected to the output end of the motor. A mounting bracket, which is installed on the outside of the first telescopic rod; A fixing cylinder, which is snapped into the inside of the retainer; A dispersion mechanism is disposed outside the fixed pipe. The dispersion mechanism includes a connecting box with a vent at the bottom. The connecting box is used to disperse the gas and discharge it downward through the vent. An adjustment mechanism is provided outside the fixed cylinder. The adjustment mechanism includes a first adjusting rod, which is installed outside the fixed cylinder. A square frame is installed outside the first adjusting rod. The motor is used to drive the fixed cylinder, the first adjusting rod, and the square frame to rotate.
[0005] Preferably, the dispersing mechanism further includes: A connecting pipe is provided, which is connected to the outside of the fixed pipe; multiple connecting pipes are provided. A central tube, which is connected to a connecting tube, and a connecting assembly is provided on the outside of the central tube; The telescopic pipe is connected to the fixed pipe and is installed inside the furnace body. A connecting plate is installed on the outside of the telescopic pipe, and four telescopic pipes and four connecting plates are provided.
[0006] Preferably, the dispersing mechanism further includes: A lifting rod, which is installed inside the furnace body; A fixing box is installed at the bottom of the lifting rod and is connected to a telescopic tube. A connecting box is installed at the bottom of the fixing box.
[0007] Preferably, the connection component includes: A fixing groove is formed inside the central tube, and two fixing grooves are formed. A filter plate, which is snapped into the inside of a fixed groove, and a filter port is provided inside the filter plate; A branch pipe, which is installed outside the central pipe.
[0008] Preferably, the connection component further includes: An outer ring, which is installed outside the central tube; A fixing bracket, which is mounted on the top of the outer ring. The card slot is located inside the mounting bracket.
[0009] Preferably, the connection component further includes: Telescopic column, which is installed on the outside of the fixed frame; A semi-ring, which is connected to the telescopic end of the telescopic column, and a suction strip is installed on the outside of the semi-ring; A paddle, which is attached to the top of the semi-ring.
[0010] Preferably, the adjustment mechanism further includes: A passageway, wherein several passageways are provided within the frame; Elastic rods are installed inside the frame, and multiple elastic rods are provided and evenly distributed.
[0011] Preferably, the adjustment mechanism further includes: The second telescopic rod is installed on the outside of the fixed cylinder; The first link is connected to the telescopic end of the second telescopic rod; The first insertion rod is installed on the outside of the first connecting rod, and multiple first insertion rods are provided and evenly distributed.
[0012] Preferably, the adjustment mechanism further includes: The third telescopic rod is installed outside the fixed cylinder; The second link is connected to the telescopic end of the third telescopic rod; The second insert is installed on the outside of the second connecting rod, and there are multiple second inserts evenly distributed.
[0013] This invention provides a deposition apparatus for the production of silicon carbide rings using chemical vapor deposition. It has the following beneficial effects: 1. This chemical vapor deposition (CVD) silicon carbide ring production equipment, through the inclusion of a dispersion mechanism, distributes the incoming gas into four fixed pipes and four telescopic pipes. The telescopic pipes then transport the gas to the fixed box and the connecting box, allowing the gas to move downwards through the ventilation openings at the bottom of the connecting box. Multiple ventilation openings are evenly distributed to facilitate more uniform contact between the gas and the ring-shaped substrate. Furthermore, driven by the lifting rod, the connecting box reciprocates vertically, promoting a wide range of gas movement within the furnace body. This solves the problem of difficulty in quickly dispersing the gas at different heights within the furnace body when it enters through pipes.
[0014] 2. This chemical vapor deposition (CVD) silicon carbide ring production equipment, through the installation of connecting components, separately delivers the precursor gas and the carrier gas. The carrier gas enters the central tube from above, while the precursor gas enters from the side of the central tube, facilitating the carrier gas to push the precursor gas downwards into the furnace. Two removable filter plates are used to intercept large particulate impurities in the gas, and these plates are easy to remove and clean after operation. Two outer rings with suction strips are used to secure the first external inlet pipe, preventing instability caused by large inlet volumes.
[0015] 3. This chemical vapor deposition (CVD) silicon carbide ring production equipment, through the setting of an adjustment mechanism, fixes each ring substrate separately, and the contact points with the ring substrate are all made of elastic material to reduce wear on the ring substrate. By opening multiple channels in the frame, it is easy for the precursor gas to contact the sides of the ring substrate. By placing the ring substrate on both sides and adjusting the position of the first or second insert, the front and back sides of the ring substrate are made to contact the precursor gas without obstruction, so that the chemical vapor deposition process can be carried out.
[0016] 4. This chemical vapor deposition (CVD) equipment for producing silicon carbide rings utilizes a dispersion mechanism and an adjustment mechanism to perform CVD on the ring-shaped substrate. The dispersion mechanism controls the dispersion of the precursor gas at multiple heights within the furnace body, while multiple adjustment mechanisms are also strategically placed. The ring-shaped substrate is rotated around by a frame with channels, allowing the sides of the substrate to react with the precursor gas. Conversely, the ring-shaped substrate is partially surrounded by a frame with channels, ensuring that both sides react with the precursor gas. This prevents incomplete reactions caused by fixed positions within the substrate failing to react with the precursor gas due to contact fixation. Attached Figure Description
[0017] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a schematic diagram of the internal structure of the present invention; Figure 3 For the present invention Figure 2 Schematic diagram of the structure at point A; Figure 4 This is a schematic diagram of the bottom structure of the dispersing mechanism of the present invention; Figure 5 This is a schematic diagram of the top structure of the dispersing mechanism of the present invention; Figure 6 This is a cross-sectional view of the connection component of the present invention; Figure 7 For the present invention Figure 6 Schematic diagram of the structure at point B; Figure 8 This is a schematic diagram of the adjustment mechanism structure of the present invention; Figure 9 For the present invention Figure 8 A schematic diagram of the structure at point C.
[0018] In the diagram: 1. Furnace body; 2. Fixed pipe; 3. Dispersion mechanism; 301. Connecting pipe; 302. Telescopic pipe; 303. Fixed box; 304. Connecting box; 305. Ventilation opening; 306. Connecting plate; 307. Central pipe; 308. Connecting assembly; 3081. Fixed groove; 3082. Filter plate; 3083. Outer ring; 3084. Branch pipe; 3085. Fixed frame; 3086. Telescopic column; 3087. Semi-ring 3088, Slot; 3089, Paddle; 309, Lifting rod; 4, Motor box; 5, First telescopic rod; 6, Card seat; 7, Fixed cylinder; 8, Adjustment mechanism; 801, First adjusting rod; 802, Square frame; 803, Channel; 804, Elastic rod; 805, Second telescopic rod; 806, First connecting rod; 807, First insert rod; 808, Third telescopic rod; 809, Second connecting rod; 810, Second insert rod. Detailed Implementation
[0019] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention are given for illustrative and descriptive purposes only, and are not intended to be exhaustive or to limit the invention to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to better illustrate the principles and practical application of the invention, and to enable those skilled in the art to understand the invention and design various embodiments with various modifications suitable for a particular purpose.
[0020] like Figures 1-9 As shown, the present invention provides a technical solution: including a furnace body 1, an exhaust pipe installed on the outside of the furnace body 1, and a valve installed inside the exhaust pipe; Fixed pipe 2 is installed on the top of furnace body 1. There are four fixed pipes 2, and the bottom of the fixed pipe 2 extends into the furnace body 1. Motor box 4, multiple motor boxes 4 are provided, the motor box 4 is installed on the outside of the furnace body 1, and the motor is installed inside the motor box 4; The first telescopic rod 5 is connected to the output end of the motor. Multiple first telescopic rods 5 are provided, and the first telescopic rod 5 extends into the furnace body 1. Card holder 6 is installed on the outside of the first telescopic rod 5. Multiple card holders 6 are provided and are distributed in a dispersed manner. The fixing cylinder 7 is snapped into the inside of the card holder 6; The dispersion mechanism 3 is located outside the fixed pipe 2. The dispersion mechanism 3 includes a connecting box 304. A ventilation port 305 is provided at the bottom of the connecting box 304. Multiple ventilation ports 305 are provided and are evenly distributed. The connecting box 304 is used to disperse the gas and discharge it downward through the ventilation ports 305. Adjustment mechanism 8 is located outside the fixed cylinder 7. Adjustment mechanism 8 includes a first adjusting rod 801, which is installed outside the fixed cylinder 7. A square frame 802 is installed outside the first adjusting rod 801. A circular groove is opened on the side of the square frame 802. The motor is used to drive the fixed cylinder 7, the first adjusting rod 801 and the square frame 802 to rotate.
[0021] Before using the equipment, open the first telescopic rod 5. The first telescopic rod 5 will move the mounting bracket 6 towards the opening of the furnace body 1. Manually install the fixing cylinder 7 inside the mounting bracket 6, and then manually place the annular substrate into the adjusting mechanism 8. Adjust the first telescopic rod 5 to its initial state. The first telescopic rod 5 will then move the mounting bracket 6, fixing cylinder 7, and adjusting mechanism 8 into the furnace body 1. Then close the outer door of the furnace body 1, adjust the dispersing mechanism 3, and open the furnace body 1 to complete the air intake. The gas will begin to contact the annular substrate. Open the dispersing mechanism 3 and the adjusting mechanism 8 to ensure better contact between the annular substrate and the gas. At the same time, adjust the valve of the exhaust pipe to allow the gas to enter the processing system connected to the exhaust pipe.
[0022] Distributed mechanism 3 also includes: Connecting pipe 301 is connected to the outside of fixed pipe 2, and multiple connecting pipes 301 are provided; A central tube 307 is connected to a connecting tube 301, and a connecting component 308 is provided on the outside of the central tube 307. Telescopic pipe 302 is connected to fixed pipe 2. Telescopic pipe 302 is installed inside furnace body 1. Connecting plate 306 is installed on the outside of telescopic pipe 302. There are four telescopic pipes 302 and four connecting plates 306. Telescopic pipe 302 is connected to the outside of fixed pipe 2 and is reinforced inside furnace body 1 by connecting plate 306. Lifting rod 309 is installed inside furnace body 1; The fixing box 303 is installed at the bottom of the lifting rod 309 and is connected to the telescopic tube 302. The connecting box 304 is installed at the bottom of the fixing box 303 and is connected to the fixing box 303.
[0023] Before using the equipment, adjust the connecting assembly 308 so that the gas enters the connecting pipe 301 through the central pipe 307, enters the fixed box 303 through the connecting pipe 301, enters the connecting box 304 through the fixed box 303, and then moves downward through the vent 305 at the bottom of the connecting box 304.
[0024] During the chemical vapor deposition process, the lifting rod 309 is activated to the reciprocating motion mode. The lifting rod 309 drives the fixed box 303 and the connecting box 304 to reciprocate in the vertical direction. During this process, the telescopic tube 302 changes between being stretched and returning to its original state.
[0025] By setting up a dispersion mechanism 3, the incoming air is dispersed into four fixed pipes 2 and four telescopic pipes 302. The telescopic pipes 302 then transport the gas to the fixed box 303 and the connecting box 304, allowing the gas to move downwards through the ventilation openings 305 at the bottom of the connecting box 304. Multiple ventilation openings 305 are evenly arranged to facilitate more uniform contact between the gas and the annular substrate. Furthermore, driven by the lifting rod 309, the connecting box 304 reciprocates in the vertical direction, promoting a wide range of gas movement within the furnace body 1.
[0026] Connection component 308 includes: The fixing groove 3081 is formed inside the central tube 307, and there are two fixing grooves 3081. The filter plate 3082 is snapped into the inside of the fixing groove 3081, and the filter plate 3082 has a filter port inside. Branch pipe 3084 is installed outside the central pipe 307 and is used to introduce the precursor gas. Outer ring 3083 is installed outside the central tube 307; Fixture 3085 is installed on top of outer ring 3083. Card slot 3088 is formed inside the mounting bracket 3085; Telescopic column 3086, which is installed on the outside of fixed frame 3085; The semi-ring 3087 is connected to the telescopic end of the telescopic column 3086, and a suction strip is installed on the outside of the semi-ring 3087. Paddle 3089 is attached to the top of semi-ring 3087.
[0027] Before using the device, the lever 3089 is in the slot 3088, and the telescopic column 3086 is in its initial state. Manually engage the first external air inlet pipe with the central tube 307, then manually pull the lever 3089. The telescopic column 3086 is stretched, causing the outer half-ring 3087 of the telescopic column 3086 to contact the first external air inlet pipe. Manually press the half-ring 3087 to attract and fix the suction strip outside the half-ring 3087 to the outside of the first external air inlet pipe, thus fixing the first external air inlet pipe. The first external air inlet pipe is used to introduce carrier gas into the central tube 307.
[0028] Manually insert the two filter plates 3082 into the two fixing slots 3081, and then manually insert the second external air intake pipe into the branch pipe 3084. The second external air intake pipe is used to introduce the precursor gas into the central pipe 307.
[0029] The carrier gas entering from above the central tube 307 pushes the precursor gas entering the central tube 307 from the branch tube 3084 downward through the two filter plates 3082. Then the combined gas enters the connecting tube 301 through the central tube 307, enters the fixed box 303 through the connecting tube 301, enters the connecting box 304 through the fixed box 303, and then moves downward through the vent 305 at the bottom of the connecting box 304.
[0030] The connecting assembly 308 allows for the separate delivery of the precursor gas and the carrier gas. The carrier gas enters the central tube 307 from above, while the precursor gas enters from the side of the central tube 307, facilitating the carrier gas's downward push of the precursor gas into the furnace body 1. Two detachable filter plates 3082 are provided to intercept large particles in the gas, and these plates are easily removed and cleaned after operation. Two outer rings 3083 with suction strips are provided to secure the first external inlet pipe, preventing instability due to large intake volumes.
[0031] Adjustment mechanism 8 also includes: Channel 803 is located inside frame 802, and several channels 803 are provided. Elastic rod 804 is installed inside the frame 802. Multiple elastic rods 804 are provided and are evenly distributed. The second telescopic rod 805 is installed on the outside of the fixed cylinder 7; The first link 806 is connected to the telescopic end of the second telescopic rod 805; The first insert 807 is installed on the outside of the first connecting rod 806. Multiple first inserts 807 are provided and evenly distributed. The first inserts 807 are made of elastic material. The third telescopic rod 808 is installed on the outside of the fixed cylinder 7; The second link 809 is connected to the telescopic end of the third telescopic rod 808; The second insert 810 is installed on the outside of the second connecting rod 809. Multiple second inserts 810 are provided and are evenly distributed. The second inserts 810 are made of elastic material.
[0032] Before using the equipment, manually insert the fixing cylinder 7 into the mounting base 6, and activate the third telescopic rod 808. The third telescopic rod 808 drives the second connecting rod 809 and the second insert rod 810 to move. The second insert rod 810 gradually enters the frame 802 until the other end of the second insert rod 810 is inserted into the circular groove inside the frame 802. At this time, the second connecting rod 809 still has not contacted the channel 803 inside the frame 802. Manually place the annular substrate on the multiple second insert rods 810, and then activate the second telescopic rod 805. The second telescopic rod 805 drives the first connecting rod 806 and the first insert rod 807 to move. The first insert rod 807 gradually enters the frame 802 until the other end of the first insert rod 807 is inserted into the circular groove inside the frame 802. At this time, the first connecting rod 806 still has not contacted the channel 803 inside the frame 802. At this time, the annular substrate is between the first insert rod 807 and the second insert rod 810, and the annular substrate is not in contact with the first insert rod 807.
[0033] Turn on the motor in the motor box 4. The motor drives the first telescopic rod 5 to rotate. The first telescopic rod 5 drives the card seat 6, the fixed cylinder 7 and the adjustment mechanism 8 to rotate, which in turn drives the annular substrate to rotate, promoting the reaction between the annular substrate and the precursor gas.
[0034] Then adjust the motor, with the motor control box 802 at the initial angle or the opposite angle, thereby adjusting the annular substrate to the initial position or the reverse-facing state.
[0035] When the frame 802 is at its initial angle, adjust the second telescopic rod 805 (located above) to its initial state. The first insertion rod 807 moves away from the frame 802, and there are no obstructions on the upper surface of the annular substrate. At this time, the precursor gas reacts with the upper surface of the annular substrate. Then, open the second telescopic rod 805 to return the first insertion rod 807 to the circular groove.
[0036] Adjust the motor, and the motor control box 802 flips to the reverse side. At this time, the reverse side of the annular substrate is facing upward. Adjust the third telescopic rod 808 at the top to the initial state. The second insertion rod 810 moves away from the box 802. There are no obstructions on the reverse side of the annular substrate. At this time, the precursor gas reacts with the reverse side of the annular substrate.
[0037] By setting the adjustment mechanism 8, each annular substrate is individually fixed, and the contact points with the annular substrate are all made of elastic material to reduce wear on the annular substrate. By opening multiple channels 803 in the frame 802, it is easy for the precursor gas to contact the sides of the annular substrate. By placing the annular substrate on both sides and adjusting the position of the first insertion rod 807 or the second insertion rod 810, the front and back sides of the annular substrate are in unobstructed contact with the precursor gas to perform chemical vapor deposition.
[0038] Working principle: Before using the equipment, open the first telescopic rod 5. The first telescopic rod 5 drives the card seat 6 to move towards the opening of the furnace body 1. Manually install the fixing cylinder 7 inside the card seat 6, and then manually place the annular substrate into the adjustment mechanism 8.
[0039] Before using the equipment, manually insert the fixing cylinder 7 into the mounting base 6, and activate the third telescopic rod 808. The third telescopic rod 808 drives the second connecting rod 809 and the second insert rod 810 to move. The second insert rod 810 gradually enters the frame 802 until the other end of the second insert rod 810 is inserted into the circular groove inside the frame 802. At this time, the second connecting rod 809 still has not contacted the channel 803 inside the frame 802. Manually place the annular substrate on the multiple second insert rods 810, and then activate the second telescopic rod 805. The second telescopic rod 805 drives the first connecting rod 806 and the first insert rod 807 to move. The first insert rod 807 gradually enters the frame 802 until the other end of the first insert rod 807 is inserted into the circular groove inside the frame 802. At this time, the first connecting rod 806 still has not contacted the channel 803 inside the frame 802. At this time, the annular substrate is between the first insert rod 807 and the second insert rod 810, and the annular substrate is not in contact with the first insert rod 807.
[0040] Adjust the first telescopic rod 5 to its initial state. The first telescopic rod 5 drives the card seat 6, the fixed cylinder 7 and the adjustment mechanism 8 into the furnace body 1, and then close the outer door of the furnace body 1.
[0041] Before using the device, the lever 3089 is in the slot 3088, and the telescopic column 3086 is in its initial state. Manually engage the first external air inlet pipe with the central tube 307, then manually pull the lever 3089. The telescopic column 3086 is stretched, causing the outer half-ring 3087 of the telescopic column 3086 to contact the first external air inlet pipe. Manually press the half-ring 3087 to attract and fix the suction strip outside the half-ring 3087 to the outside of the first external air inlet pipe, thus fixing the first external air inlet pipe. The first external air inlet pipe is used to introduce carrier gas into the central tube 307.
[0042] Manually insert the two filter plates 3082 into the two fixing slots 3081, and then manually insert the second external air intake pipe into the branch pipe 3084. The second external air intake pipe is used to introduce the precursor gas into the central pipe 307.
[0043] The furnace body 1 is turned on, and then the gas is circulated. The carrier gas entering from above the central pipe 307 pushes the precursor gas entering the central pipe 307 from the branch pipe 3084 downward through the two filter plates 3082. Then the combined gas enters the connecting pipe 301 through the central pipe 307, enters the fixed box 303 through the connecting pipe 301, enters the connecting box 304 through the fixed box 303, and then moves downward through the vent 305 at the bottom of the connecting box 304.
[0044] During chemical vapor deposition, the lifting rod 309 is switched to reciprocating motion mode. The lifting rod 309 drives the fixing box 303 and the connecting box 304 to reciprocate in the vertical direction. During this process, the telescopic tube 302 alternates between being stretched and returning to its original state. The motor in the motor box 4 is turned on, and the motor drives the first telescopic rod 5 to rotate. The first telescopic rod 5 drives the card seat 6, the fixing cylinder 7, and the adjusting mechanism 8 to rotate, thereby driving the annular substrate to rotate and promoting the reaction between the annular substrate and the precursor gas.
[0045] Then adjust the motor, with the motor control box 802 at the initial angle or the opposite angle, thereby adjusting the annular substrate to the initial position or the reverse-facing state.
[0046] When the frame 802 is at its initial angle, adjust the second telescopic rod 805 (located above) to its initial state. The first insertion rod 807 moves away from the frame 802, and there are no obstructions on the upper surface of the annular substrate. At this time, the precursor gas reacts with the upper surface of the annular substrate. Then, open the second telescopic rod 805 to return the first insertion rod 807 to the circular groove.
[0047] Adjust the motor, and the motor control box 802 flips to the reverse side. At this time, the reverse side of the annular substrate is facing upward. Adjust the third telescopic rod 808 at the top to the initial state. The second insertion rod 810 moves away from the box 802. There are no obstructions on the reverse side of the annular substrate. At this time, the precursor gas reacts with the reverse side of the annular substrate.
[0048] This allows for better contact between the annular substrate and the gas. Simultaneously, the valve on the exhaust pipe is adjusted to allow the gas to enter the processing system connected to the exhaust pipe.
[0049] Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art and related fields based on the embodiments of the present invention without inventive effort should fall within the scope of protection of the present invention. Structures, devices, and operating methods not specifically described and explained in the present invention, unless otherwise specified or limited, shall be implemented according to conventional means in the art.
Claims
1. A deposition apparatus for producing silicon carbide rings by chemical vapor deposition, comprising a furnace body (1), characterized in that: A fixing pipe (2) is installed on the top of the furnace body (1); Motor housing (4), the motor housing (4) is installed outside the furnace body (1), and the motor is installed inside the motor housing (4); The first telescopic rod (5) is connected to the output end of the motor; Card holder (6), said card holder (6) is installed on the outside of the first telescopic rod (5); A fixing cylinder (7) is snapped into the inside of the card holder (6); The dispersion mechanism (3) is located outside the fixed tube (2). The dispersion mechanism (3) includes a connecting box (304). A vent (305) is provided at the bottom of the connecting box (304). The connecting box (304) is used to disperse the gas and discharge it downward through the vent (305). An adjustment mechanism (8) is provided outside the fixed cylinder (7). The adjustment mechanism (8) includes a first adjusting rod (801), which is installed outside the fixed cylinder (7). A square frame (802) is installed outside the first adjusting rod (801). The motor is used to drive the fixed cylinder (7), the first adjusting rod (801), and the square frame (802) to rotate.
2. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 1, characterized in that: The distributed mechanism (3) further includes: A connecting pipe (301) is connected to the outside of the fixed pipe (2), and multiple connecting pipes (301) are provided; A central tube (307) is connected to a connecting tube (301), and a connecting component (308) is provided on the outside of the central tube (307). Telescopic pipe (302) is connected to fixed pipe (2). The telescopic pipe (302) is installed inside the furnace body (1). A connecting plate (306) is installed on the outside of the telescopic pipe (302). There are four telescopic pipes (302) and four connecting plates (306).
3. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 2, characterized in that: The distributed mechanism (3) further includes: A lifting rod (309) is installed inside the furnace body (1); A fixing box (303) is installed at the bottom of the lifting rod (309). The fixing box (303) is connected to the telescopic tube (302). The connecting box (304) is installed at the bottom of the fixing box (303).
4. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 2, characterized in that: The connection component (308) includes: A fixing groove (3081) is formed inside the central tube (307), and two fixing grooves (3081) are formed. A filter plate (3082) is snapped into the inside of a fixing groove (3081), and a filter port is provided inside the filter plate (3082); Branch pipe (3084) is installed outside the central pipe (307).
5. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 4, characterized in that: The connection component (308) further includes: An outer ring (3083) is installed outside the central tube (307); A fixing bracket (3085) is mounted on top of the outer ring (3083). Card slot (3088) is formed inside the fixing frame (3085).
6. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 5, characterized in that: The connection component (308) further includes: Telescopic column (3086), said telescopic column (3086) is installed on the outside of the fixed frame (3085); A semi-ring (3087) is connected to the telescopic end of a telescopic column (3086), and a suction strip is installed on the outside of the semi-ring (3087). A paddle (3089) is attached to the top of a semi-ring (3087).
7. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 1, characterized in that: The adjustment mechanism (8) further includes: Channel (803), the channel (803) is opened inside the frame (802), and there are several channels (803); Elastic rods (804) are installed inside the frame (802). Multiple elastic rods (804) are provided and are evenly distributed.
8. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 7, characterized in that: The adjustment mechanism (8) further includes: The second telescopic rod (805) is installed on the outside of the fixed cylinder (7); The first link (806) is connected to the telescopic end of the second telescopic rod (805); The first insertion rod (807) is installed on the outside of the first connecting rod (806). There are multiple first insertion rods (807) and they are evenly distributed.
9. The deposition equipment for producing silicon carbide rings by chemical vapor deposition according to claim 8, characterized in that: The adjustment mechanism (8) further includes: The third telescopic rod (808) is installed on the outside of the fixed cylinder (7); The second link (809) is connected to the telescopic end of the third telescopic rod (808); The second insert (810) is installed on the outside of the second connecting rod (809). There are multiple second inserts (810) and they are evenly distributed.
Citation Information
Patent Citations
Deposition system for chemical vapor deposition silicon carbide ring production
CN119776806A
MOCVD (Metal Organic Chemical Vapor Deposition) reactor for ZnO film material
CN120026303A
Vacuum coating substrate table capable of automatically turning over
CN212335277U
Circuit board fine processing equipment
CN217693909U
Cylinder type tray turnover machine
CN218706762U