Method for manufacturing semiconductor device

Abstract

The purpose of the present invention is to provide a technique that can restrain an insulating substrate from being fixed while being inclined with respect to the bottom surface of a case, and that can maintain the parallelism between the bottom surface of the case and the insulating substrate. This method for manufacturing a semiconductor device (100) comprises: a mounting step for mounting an insulating substrate (1) on a case mounting jig (30); a coating step in which a hot-melt adhesive (7) having a film thickness of L1 is applied to the upper surface of the peripheral part of the insulating substrate (1), and then a thermosetting adhesive (8) having a film thickness of L2 is applied to the periphery of the region where the hot-melt adhesive (7) is applied to the upper surface of the peripheral part of the insulating substrate (1); a temporary fixing step for temporarily fixing the insulating substrate (1) and the housing (4) by screwing the housing (4) and the housing mounting jig (30) after the housing (4) is disposed such that the groove (4a) is positioned at the peripheral edge of the insulating substrate (1); and a heating step for fixing the insulating substrate (1) and the case (4) by heating the temporarily fixed insulating substrate (1) and case (4). L1 > L2 in the temporary fixing step, and L1 = L2 in the heating step.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a semiconductor device. Background Technology

[0002] In the past, during the manufacturing process of semiconductor devices, the housing was fixed to an insulating substrate placed on a housing mounting fixture using adhesive. When temporarily fixing the insulating substrate and the housing, the housing and the housing mounting fixture were tightened. However, when the housing and the housing mounting fixture were tightened, a bending force was applied that caused the insulating substrate to warp, which sometimes resulted in cracks in the insulating layer of the insulating substrate.

[0003] In order to control the warping of the insulating substrate, there is a power semiconductor device that has rubber-elastic protruding spacers dispersedly inserted into the upper surface of the periphery of the insulating substrate, which can ensure the specified thickness of the adhesive during the bonding process of assembling the insulating substrate into the housing (see, for example, Patent Document 1). Existing technical documents Patent documents

[0004] Patent Document 1: Japanese Patent Application Publication No. 2000-133769 Summary of the Invention The technical problem that the invention aims to solve

[0005] However, in the technology described in Patent Document 1, during the installation of the housing, due to dimensional deviations in the components, the insulating substrate is sometimes fixed in an inclined state relative to the bottom surface of the housing. In this case, when the product is joined with the cooling component, there is a problem of the insulating substrate cracking or insufficient contact between the product and the cooling component leading to a decrease in thermal resistance.

[0006] Therefore, the purpose of this disclosure is to provide a technique that can prevent the insulating substrate from being fixed in a state of inclination relative to the bottom surface of the housing, and maintain the parallelism between the bottom surface of the housing and the insulating substrate. Technical means for solving technical problems

[0007] The method for manufacturing a semiconductor device disclosed herein is a method for manufacturing a semiconductor device, the semiconductor device comprising an insulating substrate and a housing having a groove on its bottom surface fixed to a peripheral portion of the insulating substrate. The method for manufacturing the semiconductor device is characterized by comprising: a placement step in which the insulating substrate is placed on a housing mounting fixture; a coating step in which a hot-melt adhesive with a film thickness of L1 is applied to the upper surface of the peripheral portion of the insulating substrate, and then a thermosetting adhesive with a film thickness of L2 is applied around the area on the upper surface of the peripheral portion of the insulating substrate to which the hot-melt adhesive was applied; a temporary fixing step in which, after the housing is configured such that the groove is located at the peripheral portion of the insulating substrate, the insulating substrate and the housing are temporarily fixed by tightening screws on the housing and the housing mounting fixture; and a heating step in which the temporarily fixed insulating substrate and the housing are fixed by heating them, wherein L1 > L2 in the temporary fixing step and L1 = L2 in the heating step. Invention Effects

[0008] According to this disclosure, it is possible to suppress the situation where the insulating substrate is fixed in a state of inclination relative to the bottom surface of the housing, and to maintain the parallelism between the bottom surface of the housing and the insulating substrate. Attached Figure Description

[0009] Figure 1 This is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 1. Figure 2 This is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 1. Figure 3 This is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 1. Figure 4 This is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 1. Figure 5 This is a flowchart illustrating the manufacturing method of the semiconductor device according to Embodiment 1. Figure 6 It is a temperature profile diagram showing hot melt adhesives and thermosetting adhesives. Figure 7 This is a cross-sectional view showing a semiconductor device manufacturing method when there is a deviation in the film thickness L1 of the hot melt adhesive. Figure 8 This is a cross-sectional view showing a semiconductor device manufacturing method when there is a deviation in the film thickness L1 of the hot melt adhesive. Figure 9 This is a cross-sectional view showing a semiconductor device manufacturing method when there is a deviation in the film thickness L1 of the hot melt adhesive. Figure 10 This is a cross-sectional view showing the manufacturing method of the semiconductor device according to Embodiment 2. Figure 11 This is a top view of the insulating substrate after the coating process in Embodiment 3. Figure 12 This is a top view of the insulating substrate after the coating process in Embodiment 4. Figure 13 This is a side view of the insulating substrate after the coating process in Embodiment 5. Figure 14 It is a cross-sectional view showing the manufacturing method of the semiconductor device involved in the related technology. Figure 15 It is a cross-sectional view showing the manufacturing method of the semiconductor device involved in the related technology. Figure 16 It is a cross-sectional view showing the manufacturing method of the semiconductor device involved in the related technology. Figure 17 It is a cross-sectional view showing the manufacturing method of the semiconductor device involved in the related technology. Detailed Implementation

[0010] <Implementation Method 1> The following description uses the accompanying drawings to illustrate Embodiment 1. Figures 1 to 4 This is a cross-sectional view showing the manufacturing method of the semiconductor device 100 according to Embodiment 1.

[0011] First, the semiconductor device 100, manufactured by the manufacturing method described later, will be explained. For example... Figure 4 As shown, the semiconductor device 100 is a power module, including an insulating substrate 1, a plurality of semiconductor elements 2, a housing 4, and a plurality of terminals 5.

[0012] The insulating substrate 1, when viewed from above, is quadrilateral in shape and includes an insulating layer 1a and circuit patterns 1b and 1c. The insulating layer 1a is made primarily of ceramic, for example. A conductive circuit pattern 1b is provided on the upper surface of the insulating layer 1a. A conductive circuit pattern 1c is provided on the lower surface of the insulating layer 1a. The circuit patterns 1b and 1c are made primarily of copper, for example.

[0013] Semiconductor element 2 is mounted on the upper surface of circuit pattern 1b on insulating substrate 1 via solder 3. The semiconductor material of semiconductor element 2 is a wide-bandgap semiconductor, such as silicon or silicon carbide. Alternatively, semiconductor element 2 can be a power semiconductor device such as IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), FwDi (Free Wheeling Diode), or Reverse Conducting IGBT (RC-IGBT).

[0014] The housing 4, when viewed from above, is quadrilateral and is fixed to the upper surface of the periphery of the insulating substrate 1 to enclose multiple semiconductor elements 2. The portion of the housing 4 other than the periphery bulges upwards, while the periphery extends outwards. Multiple bushings 6 are provided at the periphery of the housing 4, which secure screws 9 when the semiconductor device 100 is mounted to a heat sink (not shown) or the housing mounting clamp 30. More specifically, a groove 4a is provided on the bottom surface of the housing 4, specifically on the inner periphery of the bottom surface of the periphery of the housing 4. The groove 4a is formed on the entire inner periphery of the bottom surface of the periphery of the housing 4.

[0015] One end of the plurality of terminals 5 is engaged with the circuit pattern 1b, and the other end of the plurality of terminals 5 is exposed from the upper surface of the housing 4.

[0016] The housing 4 is fixed to the insulating substrate 1 by a hot melt adhesive 7 and a thermosetting adhesive 8 applied to the upper surface of the peripheral portion of the insulating substrate 1, or more specifically, to the upper surface of the peripheral portion of the insulating layer 1a of the insulating substrate 1.

[0017] Next, use Figures 1-5 The manufacturing method of semiconductor device 100 is explained. Figure 5 This is a flowchart illustrating the manufacturing method of the semiconductor device 100 according to Embodiment 1.

[0018] First, such as Figure 5 As shown, in the mounting process, the insulating substrate 1 is mounted on the housing mounting fixture 30 (step S1).

[0019] Next, in the coating process, after applying a hot melt adhesive 7 with a film thickness of L1 to the upper surface of the periphery of the insulating substrate 1, a thermosetting adhesive 8 with a film thickness of L2 is applied around the area on the upper surface of the periphery of the insulating substrate 1 where the hot melt adhesive 7 has been applied (step S2). At this time, L1 > L2.

[0020] Next, as Figure 1 As shown, the housing 4 is arranged with the groove 4a located at the periphery of the insulating substrate 1. At this time, due to the dimensional deviations of the components constituting the insulating substrate 1, the insulating substrate 1 is arranged in a state that is inclined relative to the upper surface of the housing mounting fixture 30, and also in a state that is inclined relative to the bottom surface of the housing 4.

[0021] Next, as Figure 2 and Figure 5 As shown, in the temporary fixing process, while maintaining the parallelism between the bottom surface of the housing 4 and the insulating substrate 1, the housing 4 is positioned with the groove 4a located at the periphery of the insulating substrate 1. Then, the insulating substrate 1 and the housing 4 are temporarily fixed by tightening screws onto the housing 4 and the housing mounting clamp 30 (step S3). At this time, due to the tightening stress, a downward load is generated in the hot melt adhesive 7, but its shape is maintained as the hot melt adhesive 7 cures. Additionally, due to the tightening stress, the upwardly bulging portion of the housing 4 deforms.

[0022] Next, as Figure 3 and Figure 5 As shown, in the heating process, the insulating substrate 1 and the housing 4 are fixed by heating the temporarily fixed insulating substrate 1 and housing 4 (step S4). In the heating process, the hot melt adhesive 7 melts, and due to the downward load, the film thickness L1 of the hot melt adhesive 7 decreases. The part of the housing 4 that is in contact with the hot melt adhesive 7 deforms downward. At this time, since the thermosetting adhesive 8 is cured, L1 = L2. As a result, the parallelism between the bottom surface of the housing 4 and the insulating substrate 1 can be maintained, and since the insulating substrate 1 is in unbiased contact with the adhesives (hot melt adhesive 7 and thermosetting adhesive 8), the concentration of fastening stress can be suppressed.

[0023] Next, as Figure 4 and Figure 5 As shown, the disassembly process (step S5) is performed to loosen screw 9 and remove the semiconductor device 100 from the housing mounting clamp 30.

[0024] Figure 6 This is a temperature profile diagram showing the hot melt adhesive 7 and the thermosetting adhesive 8. Figure 6 In the process, before time A when the melting temperature T1 of the hot melt adhesive 7 is reached, the hot melt adhesive 7 solidifies, and the thermosetting adhesive 8 melts. During the period from time A to time B when the curing start temperature T2 of the thermosetting adhesive 8 is reached, both the hot melt adhesive 7 and the thermosetting adhesive 8 melt. During the period from time B to time C when the melting temperature T1 of the hot melt adhesive 7 is reached, the hot melt adhesive 7 melts, and the thermosetting adhesive 8 solidifies. After time C, both the hot melt adhesive 7 and the thermosetting adhesive 8 solidify.

[0025] like Figure 6As shown, by setting the melting temperature T1 of the hot melt adhesive 7 to a temperature lower than the curing start temperature T2 of the thermosetting adhesive 8, the thermosetting adhesive 8 is cured after the hot melt adhesive 7 melts, thereby adjusting the film thickness of the adhesives (hot melt adhesive 7 and thermosetting adhesive 8).

[0026] Next, the effects of Implementation Method 1 will be compared with those of related technologies and explained. Figures 14 to 17 This is a cross-sectional view showing a method for manufacturing a semiconductor device 101 related to the art.

[0027] like Figure 14 As shown, in related technologies, after the insulating substrate 1 is placed on the housing mounting fixture 30, in order to control the warping of the insulating substrate 1, rubber-elastic spacers 17 are dispersedly inserted into the upper surface of the periphery of the insulating substrate 1, and an adhesive 18 is applied. The adhesive 18 is a thermosetting adhesive.

[0028] Next, the housing 4 is arranged such that the groove 4a is located at the periphery of the insulating substrate 1. At this time, due to the dimensional deviation of each component constituting the insulating substrate 1, the insulating substrate 1 is arranged in a state inclined relative to the upper surface of the housing mounting fixture 30, and also in a state inclined relative to the bottom surface of the housing 4.

[0029] Next, as Figure 15 As shown, while maintaining the parallelism between the bottom surface of the housing 4 and the insulating substrate 1, the housing 4 is positioned with the groove 4a located at the periphery of the insulating substrate 1. The insulating substrate 1 and the housing 4 are then temporarily fixed by tightening screws into the housing 4 and the housing mounting clamp 30. At this time, due to the tightening stress, a downward load is generated in the hot-melt adhesive 18. However, since the adhesive 18 has not yet cured, it deforms along with the spacer 17. Furthermore, due to the tightening stress, the upwardly bulging portion of the housing 4 deforms.

[0030] Next, as Figure 16 As shown, the insulating substrate 1 and the housing 4 are fixed by heating the temporarily fixed insulating substrate 1 and the housing 4. However, since the insulating substrate 1 and the housing 4 are heated while the spacer 17 is deformed, the insulating substrate 1 and the housing 4 are fixed in a state where the insulating substrate 1 is tilted relative to the bottom surface of the housing 4. In this case, it is impossible to maintain the parallelism between the bottom surface of the housing 4 and the insulating substrate 1.

[0031] In contrast, in Embodiment 1, the manufacturing method of the semiconductor device 100 includes: a mounting step of placing an insulating substrate 1 on a housing mounting fixture 30; a coating step of applying a hot melt adhesive 7 with a film thickness of L1 to the upper surface of the peripheral portion of the insulating substrate 1, and then applying a thermosetting adhesive 8 with a film thickness of L2 to the periphery of the area on the upper surface of the peripheral portion of the insulating substrate 1 where the hot melt adhesive 7 is applied; a temporary fixing step of temporarily fixing the insulating substrate 1 and the housing 4 by screwing the housing 4 and the housing mounting fixture 30 after arranging the housing 4 with the groove 4a located at the peripheral portion of the insulating substrate 1; and a heating step of fixing the insulating substrate 1 and the housing 4 by heating the temporarily fixed insulating substrate 1 and the housing 4. During the temporary fixing step, L1 > L2, and during the heating step, L1 = L2.

[0032] Therefore, it is possible to prevent the insulating substrate 1 from being fixed in a state of inclination relative to the bottom surface of the housing 4, and to maintain the parallelism between the bottom surface of the housing 4 and the insulating substrate 1. In addition, since the insulating substrate 1 is in unbiased contact with the adhesive (hot melt adhesive 7 and thermosetting adhesive 8), it is possible to suppress the concentration of fastening stress.

[0033] Next, a brief explanation will be given regarding the deviation in the film thickness L1 of the hot melt adhesive 7. Figures 7 to 9 This is a cross-sectional view illustrating a manufacturing method of the semiconductor device 100 when there is a deviation in the film thickness L1 of the hot melt adhesive 7. Specifically, Figure 7 Corresponding to Figure 1 , Figure 8 Corresponding to Figure 2 , Figure 9 Corresponding to Figure 3 .

[0034] like Figure 7 As shown, the film thickness L1 of the hot melt adhesive 7 is different on the left and right sides. For example, the film thickness L1 of the hot melt adhesive 7 on the left side is greater than that on the right side.

[0035] Next, as Figure 8 As shown, in the temporary fixing process, since the film thickness L1 of the hot melt adhesive 7 on the left is thicker than that of the hot melt adhesive 7 on the right, the load caused by the fastening stress on the hot melt adhesive 7 on the left becomes greater than that caused by the fastening stress on the hot melt adhesive 7 on the right.

[0036] Next, as Figure 9As shown, during the heating process, the hot melt adhesive 7 melts, and the film thickness L1 of the hot melt adhesive 7 decreases due to the downward load. However, since the load caused by the fastening stress on the left side of the hot melt adhesive 7 is greater than that on the right side, the deformation of the left side of the hot melt adhesive 7 becomes greater than that on the right side. That is, the left side of the hot melt adhesive 7 shrinks more than the right side. The part of the housing 4 that is in contact with the hot melt adhesive 7 deforms downward. At this time, since the thermosetting adhesive 8 is cured, L1 = L2. As a result, the parallelism between the bottom surface of the housing 4 and the insulating substrate 1 can be maintained, and since the insulating substrate 1 is in unbiased contact with the adhesives (hot melt adhesive 7 and thermosetting adhesive 8), the concentration of fastening stress can be suppressed.

[0037] Therefore, even if there is a deviation in the film thickness L1 of the hot melt adhesive 7, it is still possible to obtain the same result as before. Figures 1-4 The same effect is achieved when the film thickness L1 of the hot melt adhesive 7 shown has no deviation.

[0038] <Implementation Method 2> Next, implementation method 2 will be described. Figure 10 This is a cross-sectional view illustrating the manufacturing method of the semiconductor device 100 according to Embodiment 2. Furthermore, in Embodiment 2, structural elements identical to those described in Embodiment 1 are labeled with the same reference numerals and their descriptions are omitted.

[0039] In Embodiment 1, during the coating process, after applying a hot melt adhesive 7 with a film thickness of L1 to the upper surface of the periphery of the insulating substrate 1, a thermosetting adhesive 8 with a film thickness of L2 is applied to the periphery of the area on the upper surface of the periphery of the insulating substrate 1 where the hot melt adhesive 7 has been applied.

[0040] In implementation method 2, such as Figure 10 As shown, in the coating process, a hot-melt adhesive 7 with a film thickness of L1 is coated in the groove 4a of the housing 4, and a thermosetting adhesive 8 with a film thickness of L2 is coated around the area on the upper surface of the peripheral portion of the insulating substrate 1 corresponding to the area coated with the hot-melt adhesive 7. Here, the area on the upper surface of the peripheral portion of the insulating substrate 1 corresponding to the area coated with the hot-melt adhesive 7 is the portion on the upper surface of the peripheral portion of the insulating substrate 1 opposite to the area coated with the hot-melt adhesive 7. In Embodiment 2, the same effect as in Embodiment 1 can also be obtained.

[0041] <Implementation Method 3> Next, implementation method 3 will be described. Figure 11 This is a top view of the insulating substrate 1 after the coating process in Embodiment 3. Furthermore, in Embodiment 3, structural elements identical to those described in Embodiments 1 and 2 are labeled with the same reference numerals and their descriptions are omitted.

[0042] like Figure 11 As shown, in Embodiment 3, in the coating process of Embodiment 1, the hot melt adhesive 7 is coated in an L-shape at the four corners of the insulating substrate 1 when viewed from above. More specifically, the hot melt adhesive 7 is coated on portions of the insulating layer 1a at the four corners of the insulating substrate 1. Alternatively, although not shown, in the coating process of Embodiment 2, the hot melt adhesive 7 is coated in an L-shape at the portions of the groove 4a corresponding to the four corners of the insulating substrate 1 when viewed from below. Here, the portions of the groove 4a corresponding to the four corners of the insulating substrate 1 are the portions of the groove 4a opposite to the four corners of the insulating substrate 1.

[0043] This ensures that the bottom surface of the housing 4 remains parallel to the insulating substrate 1. Furthermore, during the temporary fixing process, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7, the concentration of fastening stress can be reduced, and cracks in the insulating substrate 1 can be suppressed.

[0044] <Implementation Method 4> Next, implementation method 4 will be described. Figure 12 This is a top view of the insulating substrate 1 after the coating process in Embodiment 4. Furthermore, in Embodiment 4, structural elements identical to those described in Embodiments 1-3 are labeled with the same reference numerals and their descriptions are omitted.

[0045] like Figure 12 As shown, in Embodiment 4, in the coating process of Embodiment 1, the hot melt adhesive 7 is applied in dots along the periphery of the insulating substrate 1 when viewed from above. Alternatively, although not shown, in the coating process of Embodiment 2, the hot melt adhesive 7 is applied in dots along the groove 4a when viewed from below. Furthermore, the hot melt adhesive 7 is applied at approximately equal intervals.

[0046] This ensures the parallelism between the bottom surface of the housing 4 and the insulating substrate 1, and also ensures the thickness of the adhesive (hot melt adhesive 7 and thermosetting adhesive 8). Furthermore, during the temporary fixing process, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7, the concentration of fastening stress can be reduced, and cracks in the insulating substrate 1 can be suppressed.

[0047] <Implementation Method 5> Next, implementation method 5 will be described. Figure 13 This is a side view of the insulating substrate 1 after the coating process in Embodiment 5. Furthermore, in Embodiment 5, structural elements identical to those described in Embodiments 1-4 are labeled with the same reference numerals and their descriptions are omitted.

[0048] When the gap between the insulating substrate 1 and the housing 4 is not fixed, stress concentration in the narrow gap during the temporary fixing process can cause the insulating substrate 1 to crack. To address this, as follows... Figure 13 As shown, in Embodiment 5, during the coating process of Embodiments 1 and 2 (more specifically, Embodiment 4), the film thickness L1 of the hot melt adhesive 7 is set according to the height of the non-fixed gap between the insulating substrate 1 and the housing 4. Therefore, during the temporary fixing process, stress concentration at the narrow gap can be suppressed.

[0049] It is possible to freely combine various implementation methods, or appropriately modify or omit various implementation methods.

[0050] The various methods disclosed herein are summarized and recorded below as appendices.

[0051] (Note 1) A method for manufacturing a semiconductor device. This is a method for manufacturing a semiconductor device, the semiconductor device including an insulating substrate and a housing having a groove on its bottom surface fixed to a periphery of the insulating substrate, the method for manufacturing the semiconductor device including: The mounting process involves mounting the insulating substrate on a housing mounting fixture. The coating process involves coating a hot melt adhesive with a film thickness of L1 onto the upper surface of the peripheral portion of the insulating substrate, and then coating a thermosetting adhesive with a film thickness of L2 around the area on the upper surface of the peripheral portion of the insulating substrate where the hot melt adhesive has been coated. A temporary fixing process, which involves temporarily fixing the insulating substrate and the housing by screwing the housing and the housing mounting fixture together after the housing is configured such that the groove is located at the periphery of the insulating substrate; and The heating process involves heating the temporarily fixed insulating substrate and the housing to fix the insulating substrate and the housing in place. During the temporary fixing process, L1 > L2. During the heating process, L1 = L2.

[0052] (Appendix 2) A method for manufacturing a semiconductor device. This is a method for manufacturing a semiconductor device, the semiconductor device including an insulating substrate and a housing having a groove on its bottom surface fixed to a periphery of the insulating substrate, the method for manufacturing the semiconductor device including: The mounting process involves mounting the insulating substrate on a housing mounting fixture. The coating process involves applying a hot melt adhesive with a film thickness of L1 to the groove of the housing, and applying a thermosetting adhesive with a film thickness of L2 to the periphery of the upper surface of the peripheral portion of the insulating substrate corresponding to the area where the hot melt adhesive was applied. A temporary fixing process, which involves temporarily fixing the insulating substrate and the housing by screwing the housing and the housing mounting fixture together after the housing is configured such that the groove is located at the periphery of the insulating substrate; and The heating process involves heating the temporarily fixed insulating substrate and the housing to fix the insulating substrate and the housing in place. During the temporary fixing process, L1 > L2. During the heating process, L1 = L2.

[0053] (Note 3) The method for manufacturing a semiconductor device as described in Note 1 In the coating process, the hot melt adhesive is applied in an L-shape at the four corners of the insulating substrate when viewed from above.

[0054] (Note 4) The method for manufacturing a semiconductor device as described in Note 2 In the coating process, the hot melt adhesive is applied in an L-shape at the four corners of the insulating substrate in the tank when viewed from below.

[0055] (Note 5) The method for manufacturing a semiconductor device as described in Note 1 In the coating process, the hot melt adhesive is applied in dots along the periphery of the insulating substrate when viewed from above.

[0056] (Note 6) The method for manufacturing a semiconductor device as described in Note 2 In the coating process, the hot melt adhesive is applied in dots along the groove when viewed from below.

[0057] (Note 7) Method of manufacturing a semiconductor device as described in Note 1 or 2 In the coating process, the film thickness L1 of the hot melt adhesive is set according to the height of the non-fixed gap between the insulating substrate and the housing. Label Explanation

[0058] 1 Insulating substrate 4. Shell 4a slot 7. Hot melt adhesive 8. Thermosetting adhesives 30 Housing mounting fixture 100 Semiconductor devices.

Claims

1. A method for manufacturing a semiconductor device, comprising an insulating substrate and a housing having a groove on its bottom surface fixed to a periphery of the insulating substrate, the method for manufacturing the semiconductor device being characterized by comprising: The mounting process involves mounting the insulating substrate on a housing mounting fixture. The coating process involves coating a hot melt adhesive with a film thickness of L1 onto the upper surface of the peripheral portion of the insulating substrate, and then coating a thermosetting adhesive with a film thickness of L2 around the area on the upper surface of the peripheral portion of the insulating substrate where the hot melt adhesive has been coated. A temporary fixing process is performed after the housing is configured such that the groove is located at the periphery of the insulating substrate, and the insulating substrate and the housing are temporarily fixed by tightening screws on the housing and the housing mounting fixture. as well as The heating process involves heating the temporarily fixed insulating substrate and the housing to fix the insulating substrate and the housing in place. During the temporary fixing process, L1 > L2. During the heating process, L1 = L2.

2. A method for manufacturing a semiconductor device, comprising an insulating substrate and a housing having a groove on its bottom surface fixed to a periphery of the insulating substrate, the method for manufacturing the semiconductor device being characterized by comprising: The mounting process involves mounting the insulating substrate on a housing mounting fixture. The coating process involves coating a hot melt adhesive with a film thickness of L1 in the groove of the housing, and coating a thermosetting adhesive with a film thickness of L2 around the periphery of the upper surface of the peripheral portion of the insulating substrate corresponding to the area coated with the hot melt adhesive. A temporary fixing process is performed after the housing is configured such that the groove is located at the periphery of the insulating substrate, and the insulating substrate and the housing are temporarily fixed by tightening screws on the housing and the housing mounting fixture. as well as The heating process involves heating the temporarily fixed insulating substrate and the housing to fix the insulating substrate and the housing in place. During the temporary fixing process, L1 > L2. During the heating process, L1 = L2.

3. The method for manufacturing a semiconductor device as claimed in claim 1, characterized in that, In the coating process, the hot melt adhesive is applied in an L-shape at the four corners of the insulating substrate when viewed from above.

4. The method for manufacturing a semiconductor device as claimed in claim 2, characterized in that, In the coating process, the hot melt adhesive is applied in an L-shape at the four corners of the insulating substrate in the tank when viewed from below.

5. The method for manufacturing a semiconductor device as claimed in claim 1, characterized in that, In the coating process, the hot melt adhesive is applied in dots along the periphery of the insulating substrate when viewed from above.

6. The method for manufacturing a semiconductor device as claimed in claim 2, characterized in that, In the coating process, the hot melt adhesive is applied in dots along the groove when viewed from below.

7. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, characterized in that, In the coating process, the film thickness L1 of the hot melt adhesive is set according to the height of the non-fixed gap between the insulating substrate and the housing.

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